Sensor device for determining orientation of magnet, and sensor system

Abstract

To provide a sensor device and a sensor system for determining an orientation of a two-pole magnet which is pivotable about a fixed reference point.SOLUTION: A sensor device for determining the orientation (α, β, φ, ψ) of a magnet (701) that is pivotable about a reference point (Pref) includes a semiconductor substrate (703) including first and second magnetic sensors (S1, S2) spaced apart in a first direction (X), each configured for measuring a first magnetic field component (Bx1, Bx2) oriented in the first direction, and a second magnetic field component (By1, By2) oriented in a second direction (Y). The sensor device further includes a processing circuit configured for determining: i) a first magnetic field gradient (dBx / dx); ii) a second magnetic field gradient (dBy / dx); iii) a first angle (α, ψ) based on the first magnetic field gradient; and iv) a second angle (β, φ) based on the second magnetic field gradient. A sensor system includes the sensor device and the magnet.SELECTED DRAWING: Figure 7A

Description

[Technical Field]

[0001] The present invention relates generally to the field of magnetic position sensor systems, devices, and methods, and more particularly to a magnetic position sensor device for measuring the position of a magnet that is rotatable about a fixed reference point. The present invention also relates to a sensor system comprising the sensor device and the magnet, for example, a sensor system in which the magnet is connected to a joystick. [Background technology]

[0002] Magnetic position sensor systems, particularly linear or angular position sensor systems, are known in the art. Many variations of position sensor systems exist, addressing one or more of the following requirements: using simple or inexpensive magnetic structures, using simple or inexpensive sensor devices, being able to measure over a relatively large range, being able to measure very accurately, requiring only simple arithmetic, being able to measure at high speed, being robust to positioning errors, being robust to disturbance fields, providing redundancy, being able to detect errors, being able to detect and correct errors, having a good signal-to-noise ratio (SNR), having only one degree of freedom (e.g., translation or rotation), having two degrees of freedom (e.g., one translation and one rotation, or two rotations), etc.

[0003] In many known systems, the system has only one degree of freedom of movement, for example, rotation about a single axis or translation along a single axis.

[0004] Magnetic position sensor systems in which the magnet has at least two degrees of freedom are also known in the art, for example from EP 3875915 A1, which discloses a magnet that is movable along and rotatable about an axis, or from US 2021 / 0110239 A1, which discloses a circuit with at least one trained neural network for determining information about the position, attitude, or orientation of the magnet. These examples show that position sensor systems in which the magnet has at least two degrees of freedom are much more complex than systems with only one degree of freedom.

[0005] EP 4105768 A1 discloses a sensor system comprising a semiconductor substrate having four magnetic sensors and a magnet that is rotatable about a reference point and is magnetized in a direction perpendicular to the semiconductor substrate when the magnet is in its neutral position.

[0006] EP 4357800, published on April 24, 2024, discloses a device and method for determining the orientation of a magnet using magnetic field gradients and correction values.

[0007] There is always room for improvement or substitution. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] European Patent Application Publication No. 3875915 [Patent Document 2] U.S. Patent Application Publication No. 2021 / 0110239 [Patent Document 3] European Patent Application Publication No. 4105768 [Patent Document 4] European Patent Application Publication No. 4357800 Summary of the Invention [Problem to be solved by the invention]

[0009] It is an object of embodiments of the present invention to provide a sensor device and sensor system for determining the orientation (ψ, φ, α, β) (e.g., unique position or unique orientation) of a two-pole magnet that can be pivoted about a fixed reference point. The fixed reference point can be located at a predefined height above or below a semiconductor substrate ("above" meaning on the same side of the substrate as the magnet, and "below" meaning on the opposite side of the substrate from the magnet). [Means for solving the problem]

[0010] In preferred embodiments, the orientation of the magnet is determined in a manner that is highly accurate and / or has reduced sensitivity to one or more or all of temperature variations, mounting tolerances, magnet demagnetization, disturbance fields (also known as "stray fields"), and / or requires simpler sensor placement and / or requires fewer sensor spots, and / or provides an alternative solution.

[0011] These and other objects are achieved by embodiments of the present invention.

[0012] According to a first aspect, the present invention provides a sensor device for determining an orientation (e.g., α, β, φ, ψ) of a two-pole magnet, the sensor device comprising a semiconductor substrate comprising or connected to at least first and second magnetic sensors (e.g., S1, S2) spaced apart in a first direction (e.g., X) by a predefined distance (e.g., dx), each of the first and second magnetic sensors (e.g., S1, S2) configured to measure a first magnetic field component (e.g., Bx1, Bx2) oriented in the first direction (e.g., X); In a first alternative, each of the first and second magnetic sensors (e.g., S1, S2) is further configured to measure a second magnetic field component (e.g., By1, By2) oriented in a second direction (e.g., Y) parallel to the semiconductor substrate and perpendicular to the first direction (e.g., X); Alternatively, in a second alternative, the semiconductor substrate further comprises third and fourth magnetic sensors (e.g., S3, S4) parallel to the semiconductor substrate and spaced apart by a second predefined distance (e.g., dy) in a second direction (e.g., Y) perpendicular to the first direction (e.g., X), the four magnetic sensors (e.g., S1, S2, S3, S4) being positioned on an imaginary ellipse, and each of the third and fourth magnetic sensors (e.g., S3, S4) being configured to measure a first magnetic field component (e.g., Bx3, Bx4) oriented in the first direction (e.g., X); Or in a third alternative, the semiconductor substrate further comprises third and fourth magnetic sensors (e.g., S5, S6) parallel to the semiconductor substrate and spaced apart in a second direction (e.g., Y) perpendicular to the first direction (e.g., X), the third and fourth sensors (e.g., S5, S6) being located on an imaginary line YY that is offset (e.g., dxx) from the perpendicular bisector (e.g., Y) defined by the first and second sensors (e.g., S1, S2), and each of the third and fourth sensors (e.g., S5, S6) can measure a magnetic field component (e.g., Bz5, Bz6) oriented in a third direction perpendicular to the substrate; The magnet is movable relative to the sensor device such that a center of the magnet (e.g., P) is rotatable about a reference point (e.g., Pref) having a predefined position relative to the semiconductor substrate, and the sensor device further comprises a processing circuit, which i) determines a first magnetic field gradient (e.g., dBx / dx) of a first magnetic field component (e.g., Bx1, Bx2) along the first direction (e.g., X), ii) in a first alternative, determines a second magnetic field gradient (e.g., dBy / dx) of a second magnetic field component (e.g., By1, By2) along the first direction (e.g., X), and in a second alternative, determines a third and fourth sensor (e.g., S and in a third alternative, determine a second magnetic field gradient (e.g., dBx / dy) along the second direction (e.g., Y) based on signals obtained from the third and fourth magnetic sensors (e.g., S5, S6). iii) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx). iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBy / dx, dBx / dy, dBz / dy).

[0013] In one embodiment, the magnet is magnetized in a direction substantially parallel to the semiconductor substrate when an imaginary line passing through the center of the magnet (e.g., P) and a reference point (e.g., Pref) is oriented substantially perpendicular to the semiconductor substrate, or the orthogonal projection of the center of the magnet (e.g., P) on the semiconductor substrate substantially coincides with a point (e.g., C) located midway between the first magnetic sensor (e.g., S1) and the second magnetic sensor (e.g., S2), or the magnet is magnetized in a direction substantially perpendicular to an imaginary line passing through the center of the magnet (e.g., P) and a reference point (e.g., Pref).

[0014] In one embodiment, each of the first and second magnetic sensors (e.g., S1, S2) is further configured to measure a magnetic field component (e.g., Bz1, Bz2) oriented in a third direction (e.g., Z) perpendicular to the semiconductor substrate, and the processing circuit is further configured to v) determine a third magnetic field gradient (e.g., dBz / dx) of the magnetic field component (e.g., Bz1, Bz2) oriented in the third direction (e.g., Z) along the first direction (e.g., X), iii) determine a first angle (e.g., α, ψ) based on the first and third magnetic field gradients (e.g., dBx / dx, dBz / dx), and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBy / dx, dBx / dy, dBz / dy) and the third magnetic field gradient (e.g., dBz / dx).

[0015] In one embodiment, the sensor device further comprises a temperature sensor for measuring temperature, and the processing circuit is configured to: iii) determine a correction factor D1 as a predefined function of the measured temperature; iv) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D1; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBy / dx, dBx / dy, dBz / dy) and the correction factor D1.

[0016] In one embodiment, the semiconductor substrate further comprises additional magnetic sensors (e.g., S3, Sc, Sc) located midway (e.g., C) between the first magnetic sensor (e.g., S1) and the second magnetic sensor (e.g., S2) and configured to determine two or more of a magnetic field component oriented in a first direction (e.g., X) (e.g., Bxc), a magnetic field component oriented in a second direction (e.g., Y) (e.g., Byc), and a magnetic field component oriented in a third direction (e.g., Z) (e.g., Bzc), and the processing circuitry It is configured to determine a correction factor D2 as the sum of the squares of two or more of the magnetic field components (e.g., Bxc, Byc, Bzc) measured by the additional magnetic sensors (e.g., S3, Sc, Sc); iii) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D2; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBy / dx, dBx / dy, dBz / dy) and the correction factor D2.

[0017] In one embodiment, the magnetic sensor is configured as specified in the first or second alternative, and the processing circuitry is configured to: iii) determine a correction factor D3a as the sum of the squares of the first magnetic field gradient (e.g., dBx / dx) and the second magnetic field gradient (e.g., dBy / dx, dBx / dy); iii) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D3a; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBy / dx, dBx / dy) and the correction factor D3a.

[0018] In one embodiment, the magnetic sensors are configured as specified in the first alternative, and each of the first and second magnetic sensors (e.g., S1, S2) is further configured to measure a magnetic field component (e.g., Bz1, Bz2) oriented in a third direction (e.g., Z) perpendicular to the semiconductor substrate, and the processing circuitry determines a third magnetic field gradient (e.g., dBz / dx) of the third magnetic field component (e.g., Bz1, Bz2) along the first direction (e.g., X) and It is configured to determine a correction factor D3b as the sum of the squares of two or three of the first, second and third magnetic field gradients (e.g., dBx / dx, dBy / dx, dBz / dx); iii) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D3b; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBy / dx) and the correction factor D3b.

[0019] In one embodiment, the magnetic sensors are configured as specified in the first alternative, and the semiconductor substrate further comprises a third magnetic sensor (e.g., S3) located midway (e.g., C) between the first magnetic sensor (e.g., S1) and the second magnetic sensor (e.g., S2) and configured to determine a magnetic field component (e.g., Bxc) oriented in a first direction (e.g., X) and a magnetic field component (e.g., Byc) oriented in a second direction (e.g., Y), and the processing circuitry determines the first magnetic field component (e.g., Bxc) along the first direction (e.g., X) and the second magnetic sensor (e.g., Byc) along the second direction (e.g., Y). ) along the first direction (e.g., X), and a second-order gradient (e.g., d²Bx / dx²) of a second magnetic field component (e.g., By) along the first direction (e.g., X), and determine a correction factor D4a as the sum of the squares of these second-order gradients; iii) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D4a; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBy / dx) and the correction factor D4a.

[0020] In one embodiment, the magnetic sensors are configured as specified in the first alternative, wherein each of the first and second magnetic sensors (e.g., S1, S2) is further configured to measure a third magnetic field component (e.g., Bz1, Bz2) oriented in a third direction (e.g., Z) perpendicular to the substrate, and the semiconductor substrate further comprises a third magnetic sensor (e.g., S3) located midway (e.g., C) between the first magnetic sensor (e.g., S1) and the second magnetic sensor (e.g., S2) and configured to determine a magnetic field component Bxc oriented in the first direction (e.g., X), a magnetic field component Byc oriented in the second direction (e.g., Y), and a magnetic field component Bzc oriented in the third direction (e.g., Z), and the processing circuitry ), a second order gradient (e.g., d²Bx / dx²) of a first magnetic field component (e.g., Bx) along the first direction (e.g., X), a second order gradient (e.g., d²B² / dx²) of a second magnetic field component (e.g., By) along the first direction (e.g., X), a second order gradient (e.g., d²B² / dx²) of a third magnetic field component (e.g., Bz) along the first direction (e.g., X), and determine a correction factor D4b as a sum of two or three squares of the second order gradients; iii) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D4b; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dB² / dx) and the correction factor D4b.

[0021] In one embodiment, the sensor device is configured to store a first relationship between a first magnetic field gradient and a first angle and / or a second relationship between a second magnetic field gradient and a second angle, and the processing circuit is configured to determine a first angle based on the first magnetic field gradient and the first relationship and / or a second angle based on the second magnetic field gradient and the second relationship, preferably wherein the first and / or second relationships comprise a mathematical formula or a look-up table.

[0022] According to a second aspect, the present invention also provides a sensor system comprising a magnetic sensor device according to the first aspect, a two-pole magnet, wherein the magnet is magnetized in a direction substantially parallel to the semiconductor substrate when an imaginary line passing through the center of the magnet (e.g., P) and a reference point (e.g., Pref) is oriented substantially perpendicular to the semiconductor substrate, or the orthogonal projection of the center of the magnet (e.g., P) on the semiconductor substrate substantially coincides with a point (e.g., C) located midway between the first magnetic sensor (e.g., S1) and the second magnetic sensor (e.g., S2), or the magnet is magnetized in a direction substantially perpendicular to an imaginary line passing through the center of the magnet (e.g., P) and a reference point (e.g., Pref).

[0023] According to a third aspect, the present invention provides a sensor device for determining the orientation (e.g., α, β, φ, ψ) of a two-pole magnet, the sensor device comprising a semiconductor substrate comprising or connected to at least first and second magnetic sensors (S1, S2) spaced apart in a first direction (X) by a predefined distance (dx), each of the first and second magnetic sensors (S1, S2) configured to measure a first magnetic field component (e.g., Bx1, Bx2) oriented in the first direction (X) and a second magnetic field component (e.g., By1, By2) oriented in a second direction (e.g., Y) parallel to the semiconductor substrate and perpendicular to the first direction (e.g., X), the magnet being arranged such that a center (P) of the magnet is located above the semiconductor substrate (e.g., above the semiconductor substrate or below the semiconductor substrate), The sensor device is movable relative to the sensor device so as to be rotatable about a reference point (Pref) having a predetermined position relative to the semiconductor substrate (in the plane of the plate), and the sensor device further comprises a processing circuit configured to: i) determine a first magnetic field gradient (e.g., dBx / dx) of a first magnetic field component (e.g., Bx1, Bx2) along the first direction (e.g., X); ii) determine a second magnetic field gradient (e.g., dBy / dx) of a second magnetic field component (e.g., By1, By2) along the first direction (e.g., X); iii) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx); and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBy / dx).

[0024] Consider an imaginary line segment [CP] formed between a point C midway between the first and second sensors and a point P at the center of the magnet. A first angle (α, ψ) can be formed between a first orthogonal projection of the imaginary line segment [CP] on a first imaginary plane (XZ) parallel to the first direction (X) and a third direction (Z) perpendicular to the semiconductor substrate, and the first direction (X) or the third direction (Z).

[0025] A second angle (β, φ) can be formed between a second orthogonal projection of an imaginary line segment [CP] on a second imaginary plane (YZ) parallel to the second direction (Y) and the third direction (Z) and the second direction (Y) or the third direction (Z).

[0026] It has been found that the orientation so determined has improved accuracy and reduced sensitivity to one or more or all of temperature variations, mounting tolerances, external disturbance fields, magnet demagnetization, and the like.

[0027] The semiconductor substrate may be a silicon substrate. It should be noted that "a semiconductor substrate comprising or connected to a plurality of magnetic sensors" does not necessarily mean that the sensors are embedded in the semiconductor substrate (although this is possible), nor does it necessarily mean that the sensors must be made of silicon. Indeed, the magnetic sensors may be formed on top of or next to the silicon substrate, and may comprise a material different from silicon, for example, a ferromagnetic material (xMR), or a semiconductor compound (e.g., a III-V compound).

[0028] The processing circuitry may be embedded in the semiconductor substrate that also includes the magnetic sensor, but this is not absolutely necessary. In one embodiment, the sensor device includes two silicon substrates, a first substrate including the magnetic sensor and a second substrate including the processing circuitry.

[0029] The processing circuitry is preferably implemented on a CMOS substrate (i.e., a semiconductor substrate fabricated using a CMOS compatible process).

[0030] In one embodiment, the magnet can be tilted about said reference point (Pref) by a first angle ψ in the range of -30° to +30° and / or a second angle φ in the range of -30° to +30°.

[0031] Preferably, the semiconductor substrate is 9.0 mm 2 Less than or equal to 7.0 mm 2 Less than or equal to 5.0 mm 2 Less than or equal to 4.0 mm 2It has a smaller area than

[0032] The magnet is a two-pole magnet, for example a cylindrical two-pole magnet, or a two-pole bar magnet, or a two-pole spherical magnet.

[0033] In one embodiment, the magnet is magnetized in a direction substantially parallel to the semiconductor substrate when an imaginary line passing through the center of the magnet (P) and through a reference point (Pref) is oriented substantially perpendicular to the semiconductor substrate.

[0034] In one embodiment, the orthogonal projection of the center (P) of the magnet on the semiconductor substrate substantially coincides with a point (C) located midway between the first sensor (S1) and the second sensor (S2).

[0035] In one embodiment, the magnet is magnetized in a direction substantially perpendicular to an imaginary line passing through the center of the magnet (P) and through a reference point (Pref).

[0036] In other words, simply stated, a magnet is magnetized in a direction parallel to the semiconductor substrate when the magnet is in its "neutral position" (e.g., as shown in Figures 1, 6A, 7A, 8A, 9A, 15, and 23A), i.e., when ψ = 0° and φ°. "Orthogonal projection" means "projection in a direction (Z) perpendicular to the substrate." "Substantially coincident" means, for example, that "the projection of center P is located at a distance of at most 1.0 mm, or at most 0.7 mm, or at most 0.5 mm, or at most 0.3 mm from point C."

[0037] In one embodiment, the magnet has a cylindrical shape. The cylindrical shape may have a height in the range of 2.0 to 15.0 mm and a diameter in the range of 2.0 to 15.0 mm. In one embodiment, the cylindrical shape has a height in the range of 3.0 to 8.0 mm and a diameter in the range of 3.0 to 8.0 mm.

[0038] In one embodiment, the magnet has a substantially cylindrical shape having a height and a diameter, and the ratio H / D of the height H to the diameter D is in the range of 50% to 200%, or in the range of 75% to 150%, or in the range of 80% to 130%, or in the range of 90% to 115%, or in the range of 50% to 100%, or in the range of 51% to 99%, or in the range of 101% to 200%.

[0039] In one embodiment, the magnet has an oval shape.

[0040] In one embodiment, the magnet has a substantially spherical shape, which may have a diameter in the range of 2.0 to 15.0 mm, or in the range of 3.0 mm to 8.0 mm.

[0041] In one embodiment, the magnet has a substantially beam-like configuration.

[0042] In one embodiment, each of the first and second magnetic sensors (S1, S2) is further configured to measure a third magnetic field component (e.g., Bz1, Bz2) oriented in a third direction (e.g., Z) perpendicular to the substrate, and the processing circuit is configured to v) determine a third magnetic field gradient (e.g., dBz / dx) of the third magnetic field component (e.g., Bz1, Bz2) along the first direction (e.g., X), iii) determine a first angle (e.g., α, ψ) based on the first and third magnetic field gradients (e.g., dBx / dx, dBz / dx), and iv) determine a second angle (e.g., β, φ) based on the second and third magnetic field gradients (e.g., dBy / dx, dBz / dx).

[0043] The first angle may be calculated as a function of the ratio between the first magnetic field gradient (dBx / dx) and the third magnetic field gradient (dBz / dx), for example as an arctan or atan2 function of said ratio.

[0044] The second angle may be calculated as a function of the ratio between the second magnetic field gradient (dBy / dx) and the third magnetic field gradient (dBz / dx), for example as an arctan or atan2 function of the ratio.

[0045] The third magnetic field gradient is related to (eg, indicates) the magnetic field strength of the magnet and is substantially independent of the orientation of the magnet for small angular displacements of the magnet.

[0046] High accuracy of angular position and reduced sensitivity to temperature variations, magnet demagnetization, mounting tolerances and disturbance fields are advantages of this sensor device.

[0047] In one embodiment, the sensor device further comprises a temperature sensor for measuring a temperature (e.g., the temperature of the magnet or the temperature of the semiconductor substrate), and the processing circuit is configured to: iii) determine a correction factor D1 as a predefined function of the measured temperature; iv) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D1; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBy / dx) and the correction factor D1.

[0048] The first angle may be calculated as a function of the ratio of the first magnetic field gradient (dBx / dx) and the correction factor D1.

[0049] The second angle can be calculated as a function of the ratio of the second magnetic field gradient (dBy / dx) and the correction factor D1.

[0050] The temperature may be obtained from an internal temperature sensor built into the sensor device (e.g., embedded in a silicon substrate), or may be obtained from an external temperature sensor (e.g., mounted on or near a magnet) and electrically connected to the sensor device.

[0051] The predefined function may be stored in a non-volatile memory of the sensor device, for example in the form of a look-up table, or in the form of a set of coefficients of a polynomial, or in any other suitable way.

[0052] High accuracy of angular position and reduced sensitivity to temperature variations and disturbance fields are advantages of this sensor device.

[0053] In one embodiment, the semiconductor substrate further comprises a third magnetic sensor (S3) located midway (C) between the first magnetic sensor (S1) and the second magnetic sensor (S2) and configured to determine two or more of a magnetic field component (e.g., Bxc) oriented in a first direction (e.g., X), a magnetic field component (e.g., Byc) oriented in a second direction (e.g., Y), and a magnetic field component (e.g., Bzc) oriented in a third direction (e.g., Z), and the processing circuit is configured to: iii) determine a correction factor D2 as a sum of the squares of two or more of the magnetic field components (e.g., Bxc, Byc, Bzc) measured by the third magnetic sensor (e.g., S3); iv) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D2; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBy / dx) and the correction factor D2.

[0054] The first angle may be calculated as a function of the ratio of the first magnetic field gradient (dBx / dx) and the square root of the correction factor D2.

[0055] The second angle may be calculated as a function of the ratio of the second magnetic field gradient (dBy / dx) and the square root of the correction factor D2.

[0056] In one embodiment, the processing circuitry is configured to: determine a correction factor D3a as the sum of the squares of the first and second magnetic field gradients (e.g., dBx / dx, dBy / dx); iii) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D3a; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBy / dx) and the correction factor D3a.

[0057] In this embodiment, the correction factor D3a is calculated as sqr(dBx / dx)+sqr(dBy / dx), in which case the sensors S1, S2 must be able to measure Bx and By, but not necessarily Bz.

[0058] The first angle may be calculated as a function of the ratio of the first magnetic field gradient (dBx / dx) and the square root of the correction factor D3a.

[0059] The second angle may be calculated as a function of the ratio of the second magnetic field gradient (dBy / dx) and the square root of the correction factor D3a.

[0060] In one embodiment, each of the first and second magnetic sensors (S1, S2) is further configured to measure a third magnetic field component (e.g., Bz1, Bz2) oriented in a third direction (e.g., Z) perpendicular to the substrate, and the processing circuit is configured to: iii) determine a third magnetic field gradient (e.g., dBz / dx) of the third magnetic field component (e.g., Bz1, Bz2) along the first direction (e.g., X); and determine a correction factor D3b as a sum of two or three squares of the first, second, and third magnetic field gradients (e.g., dBx / dx, dBY / dx, dBZ / dx); iv) determine a second angle (e.g., β, φ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D3b.

[0061] The correction factor D3b can be calculated as sqr(dBx / dx)+sqr(dBz / dx).

[0062] The correction factor D3b can be calculated as sqr(dBy / dx)+sqr(dBz / dx).

[0063] The correction factor D3b can be calculated as sqr(dBx / dx)+sqr(dBy / dx)+sqr(dBz / dx).

[0064] The first angle may be calculated as a function of the ratio of the first magnetic field gradient (eg, dBx / dx) and the square root of the correction factor D3b.

[0065] The second angle may be calculated as a function of the ratio of the second magnetic field gradient (eg, dBy / dx) and the square root of the correction factor D3b.

[0066] In one embodiment, the semiconductor substrate further comprises a third magnetic sensor (S3) located midway (C) between the first magnetic sensor (S1) and the second magnetic sensor (S2) and configured to determine a magnetic field component (e.g., Bxc) oriented in a first direction (e.g., X) and a magnetic field component (e.g., Byc) oriented in a second direction (e.g., Y), and the processing circuitry determines a quadratic gradient (e.g., d2Bx / dx2) of the first magnetic field component (e.g., Bx) along the first direction (e.g., X). ), and a second order gradient (e.g., d2By / dx2) of a second magnetic field component (By) along the first direction (X), and determine a correction factor D4a as the sum of the squares of these second order gradients; iii) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D4a; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBy / dx) and the correction factor D4a.

[0067] In this embodiment, the three sensors S1, S2, S3 must be able to measure Bx and By, but not necessarily Bz.

[0068] The first angle may be calculated as a function of the ratio of the first magnetic field gradient (eg, dBx / dx) and the square root of the correction factor D4a.

[0069] The second angle may be calculated as a function of the ratio of the second magnetic field gradient (eg, dBy / dx) and the square root of the correction factor D4a.

[0070] In one embodiment, each of the first and second magnetic sensors (S1, S2) is further configured to measure a third magnetic field component (e.g., Bz1, Bz2) oriented in a third direction (e.g., Z) perpendicular to the substrate, and the semiconductor substrate further comprises a third magnetic sensor (e.g., S3) located midway (C) between the first magnetic sensor (S1) and the second magnetic sensor (S2) and configured to determine a magnetic field component (e.g., Bxc) oriented in the first direction (e.g., X), a magnetic field component (e.g., Byc) oriented in the second direction (e.g., Y), and a magnetic field component (e.g., Bzc) oriented in the third direction (e.g., Z), and the processing circuitry is configured to measure the first magnetic field component ( For example, the method is configured to determine one or more of a secondary gradient (e.g., d²Bx / dx²) of a magnetic field component (e.g., Bx), a secondary gradient (e.g., d²By / dx²) of a second magnetic field component (e.g., By) along the first direction (e.g., X), and a secondary gradient (e.g., d²Bz / dx²) of a third magnetic field component (e.g., Bz) along the first direction (e.g., X), and determine a correction factor D4b as a sum of two or three squares of the secondary gradients; iii) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D4b; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBy / dx) and the correction factor D4b.

[0071] The correction factor D4b can be calculated as sqr(d2Bx / dx2)+sqr(d2Bz / dx2).

[0072] The correction factor D4b can be calculated as sqr(d2By / dx2)+sqr(d2Bz / dx2).

[0073] The correction factor D4b can be calculated as sqr(d2Bx / dx2)+sqr(d2By / dx2)+sqr(d2Bz / dx2).

[0074] The first angle may be calculated as a function of the ratio of the first magnetic field gradient (eg, dBx / dx) and the square root of the correction factor D4b.

[0075] The second angle may be calculated as a function of the ratio of the second magnetic field gradient (eg, dBy / dx) and the square root of the correction factor D4b.

[0076] In one embodiment, the semiconductor substrate comprises or is connected to two (e.g., only two) magnetic pixels S1, S2 positioned on an imaginary line X, and each of the first and second magnetic sensors comprises an integrated magnetic flux concentrator (IMC) and four horizontal Hall elements arranged near the periphery of the IMC and angularly spaced apart by multiples of 90°, for example, as shown in Figures 10A-10D.

[0077] In one embodiment, the semiconductor substrate comprises or is connected to two (e.g., only two) magnetic pixels S1, S2 positioned on an imaginary line X, and each of the first and second magnetic sensors comprises a horizontal Hall element, one or two vertical Hall elements arranged to measure Bx, and one or two vertical Hall elements arranged to measure By, e.g., as shown in FIG. 11 .

[0078] In one embodiment, the semiconductor substrate comprises or is connected to two (e.g., only two) magnetic pixels S1, S2 positioned on an imaginary line X, and each of the first and second magnetic sensors comprises one or two vertical Hall elements arranged to measure Bx and one or two vertical Hall elements to measure By, for example, as shown in FIG. 12.

[0079] In one embodiment, the semiconductor substrate comprises or is connected to two (e.g., only two) magnetic pixels S1, S2 positioned on an imaginary line X, and each of the first and second magnetic sensors comprises one or more magnetoresistive (MR) elements arranged to measure Bx and one or more magnetoresistive (MR) elements arranged to measure By.

[0080] In one embodiment, the semiconductor substrate comprises or is connected to three magnetic pixels S1, S2, S3 positioned on an imaginary line X, each of these magnetic sensors comprising an integrated magnetic flux concentrator (IMC) and four horizontal Hall elements arranged near the periphery of the IMC and angularly spaced apart by multiples of 90°.

[0081] In one embodiment, the semiconductor substrate comprises or is connected to three magnetic pixels S1, S2, S3 positioned on an imaginary line X, each of which comprises one or two vertical Hall elements arranged to measure Bx and one or two vertical Hall elements arranged to measure By, but no horizontal Hall elements.

[0082] In one embodiment, the semiconductor substrate comprises or is connected to three magnetic pixels S1, S2, S3 positioned on an imaginary line X, each of which comprises one or more magnetoresistive (MR) elements arranged to measure Bx and one or more magnetoresistive (MR) elements arranged to measure By.

[0083] In one embodiment, the semiconductor substrate comprises or is connected to three magnetic pixels S1, S2, S3 positioned on an imaginary line X, each of these magnetic sensors comprising one or two vertical Hall elements arranged to measure Bx and one or two vertical Hall elements arranged to measure By, except that only magnetic pixel S3, located between S1 and S2, further comprises a horizontal Hall element, as shown, for example, in FIG. 13 .

[0084] The present invention also provides a sensor system comprising the magnetic sensor device according to the third aspect and the two-pole magnet.

[0085] The two-pole magnet is preferably magnetized in a direction parallel to the semiconductor substrate when the imaginary line segment [CP] is oriented substantially perpendicular to the semiconductor substrate (e.g., within a tolerance of ±10° or ±5°).

[0086] The sensor system may be a joystick assembly.

[0087] The sensor system may further comprise a joystick connected to or comprising a magnet.

[0088] In one embodiment, the magnet has a cylindrical shape with a diameter D and is mounted such that the distance "g" between the center of the magnet (P) and a point (C) located midway between the first sensor (S1) and the second sensor (S2) is at least 2.0 mm + (D / 2) and at most 10.0 mm + (D / 2) when point P is positioned "vertically above" point C, i.e., when the magnet is in its "neutral position."

[0089] According to a fourth aspect, the present invention provides a sensor device for determining the orientation (e.g., α, β, φ, ψ) of a two-pole magnet, the sensor device comprising a semiconductor substrate comprising or connected to at least four magnetic sensors (e.g., S1, S2, S3, S4) positioned on an imaginary ellipse, the first and second magnetic sensors (S1, S2) being spaced apart in a first direction (e.g., X) by a first predefined distance (e.g., dx), and a second predefined a semiconductor substrate including third and fourth magnetic sensors (e.g., S3, S4) spaced apart in a second direction (e.g., Y) perpendicular to the first direction (e.g., X) by a distance (e.g., dy equal to, greater than, or less than dx), parallel to the semiconductor substrate, wherein each magnetic sensor (e.g., S1, S2, S3, S4) is configured to measure a first magnetic field component (e.g., Bx1, Bx2, Bx3, Bx4) oriented in the first direction (e.g., X). The magnet is movable relative to the sensor device such that a center (P) of the magnet is rotatable about a reference point (Pref) having a predefined position relative to the semiconductor substrate (e.g., above the semiconductor substrate or below the semiconductor substrate, in the plane of the semiconductor substrate), and the sensor device further comprises a processing circuit, which is configured to: i) calculate a first magnetic field along the first direction (e.g., X) based on signals obtained from the first and second magnetic sensors (S1, S2); ii) determine a second magnetic field gradient (e.g., dBx / dx) along the second direction (e.g., Y) based on signals obtained from the third and fourth magnetic sensors (e.g., S3, S4); iii) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx); and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBx / dy).

[0090] The same comments made regarding claim 1 (e.g., regarding the line segment [CP], the first angle α or ψ, the second angle β or φ, the semiconductor substrate and the CMOS substrate) are also applicable here.

[0091] In one embodiment, the magnet is magnetized in a direction substantially parallel to the semiconductor substrate when an imaginary line passing through the center of the magnet (P) and through a reference point (Pref) is oriented substantially perpendicular to the semiconductor substrate.

[0092] In one embodiment, the orthogonal projection of the center (P) of the magnet on the semiconductor substrate substantially coincides with a point (C) located midway between the first sensor (S1) and the second sensor (S2).

[0093] The same comments made regarding claim 2 (eg, regarding the "neutral position" and possible shapes of the magnet) are also applicable here.

[0094] In one embodiment, the magnet is magnetized in a direction substantially perpendicular to an imaginary line passing through the center of the magnet (P) and through a reference point (Pref).

[0095] In one embodiment, each of the first and second magnetic sensors (S1, S2) is further configured to measure a third magnetic field component (e.g., Bz1, Bz2) oriented in a third direction (e.g., Z) perpendicular to the substrate, and the processing circuit is configured to v) determine a third magnetic field gradient (e.g., dBz / dx) of the third magnetic field component (e.g., Bz1, Bz2) along the first direction (e.g., X), iii) determine a first angle (e.g., α, ψ) based on the first and third magnetic field gradients (e.g., dBx / dx, dBz / dx), and iv) determine a second angle (e.g., β, φ) based on the second and third magnetic field gradients (e.g., dBx / dy, dBz / dx).

[0096] The first angle may be calculated as a function of the ratio between the first magnetic field gradient (dBx / dx) and the third magnetic field gradient (dBz / dx), for example as an arctan or atan2 function of said ratio.

[0097] The second angle may be calculated as a function of the ratio between the second magnetic field gradient (dBx / dy) and the third magnetic field gradient (dBz / dx), for example as an arctan or atan2 function of the ratio.

[0098] High accuracy of angular position and reduced sensitivity to temperature variations, magnet demagnetization, mounting tolerances and disturbance fields are advantages of this sensor device.

[0099] In one embodiment, each magnetic sensor (e.g., S1, S2, S3, S4) is further configured to measure a third magnetic field component (e.g., Bz1, Bz2, Bz3, Bz4) oriented in a third direction (e.g., Z) perpendicular to the substrate, and the processing circuitry v) determines a third magnetic field gradient (e.g., dBz / dx) of the third magnetic field component (e.g., Bz1, Bz2) obtained from the first and second magnetic sensors (e.g., S1, S2) along the first direction (e.g., X), and vi) a third magnetic field gradient (e.g., dBz / dx) of the third magnetic field component (e.g., Bz1, Bz2) along the second direction (e.g., X). iii) determine a fourth magnetic field gradient (e.g., dBz / dy) of a third magnetic field component (e.g., Bz3, Bz4) obtained from the third and fourth magnetic sensors (e.g., S3, S4) along a direction (e.g., Y); iii) determine a first angle (e.g., α, ψ) based on the first and third magnetic field gradients (e.g., dBx / dx, dBz / dx); and iv) determine a second angle (e.g., β, φ) based on the second and fourth magnetic field gradients (e.g., dBx / dy, dBz / dy).

[0100] The first angle may be calculated as a function of the ratio between the first magnetic field gradient (dBx / dx) and the third magnetic field gradient (dBz / dx), for example as an arctan or atan2 function of said ratio.

[0101] The second angle may be calculated as a function of the ratio between the second magnetic field gradient (dBx / dy) and the fourth magnetic field gradient (dBz / dy), for example as an arctan or atan2 function of the ratio.

[0102] In one embodiment, the sensor device further comprises a temperature sensor for measuring a temperature (e.g., the temperature of the magnet or the temperature of the semiconductor substrate), and the processing circuit is configured to: iii) determine a correction factor D1 as a predefined function of the measured temperature; iv) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D1; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBx / dy) and the correction factor D1.

[0103] The first angle may be calculated as a function of the ratio of the first magnetic field gradient (dBx / dx) and the correction factor D1.

[0104] The second angle can be calculated as a function of the ratio of the second magnetic field gradient (dBx / dy) and the correction factor D1.

[0105] In one embodiment, the semiconductor substrate further comprises a fifth magnetic sensor (e.g., Sc) located midway (C) between the first magnetic sensor (S1) and the second magnetic sensor (S2) and configured to determine two or more of a magnetic field component (e.g., Bxc) oriented in a first direction (X), a magnetic field component (e.g., Byc) oriented in a second direction (Y), and a magnetic field component (e.g., Bzc) oriented in a third direction (Z), and the processing circuit is configured to: iii) determine a correction factor D2 as a sum of the squares of two or more of the magnetic field components (e.g., Bxc, Byc, Bzc) measured by the fifth magnetic sensor (e.g., Sc); iv) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D2; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBx / dy) and the correction factor D2.

[0106] The first angle may be calculated as a function of the ratio of the first magnetic field gradient (eg, dBx / dx) and the square root of the correction factor D2.

[0107] The second angle may be calculated as a function of the ratio of the second magnetic field gradient (eg, dBx / dy) and the square root of the correction factor D2.

[0108] In one embodiment, the processing circuitry is configured to: determine a correction factor D3a as the sum of the squares of the first and second magnetic field gradients (e.g., dBx / dx, dBx / dy); iii) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D3a; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBx / dy) and the correction factor D3a.

[0109] In this embodiment, the correction factor D3a is calculated as sqr(dBx / dx)+sqr(dBx / dy), in which case the sensors S1, S2, S3, S4 must be able to measure Bx, but not necessarily By or Bz.

[0110] The first angle may be calculated as a function of the ratio of the first magnetic field gradient (eg, dBx / dx) and the square root of the correction factor D3a.

[0111] The second angle may be calculated as a function of the ratio of the second magnetic field gradient (eg, dBx / dy) and the square root of the correction factor D3a.

[0112] In one embodiment, at least two of the magnetic sensors (e.g., S1, S2, S3, S4) are further configured to measure third magnetic field components (e.g., Bz1, Bz2, Bz3, Bz4) oriented in a third direction (e.g., Z) perpendicular to the substrate, and the processing circuitry is configured to v) determine a third magnetic field gradient (e.g., dBz / dx) of the third magnetic field components (e.g., Bz1, Bz2) obtained from the first and second magnetic sensors (S1, S2) along the first direction (X), and vi) determine a third magnetic field gradient (e.g., dBz / dx) of the third magnetic field components (e.g., Bz1, Bz2) obtained from the third and fourth magnetic sensors (e.g., S3, S4) along the second direction (e.g., Y). the processing circuitry is configured to: iii) determine a correction factor D3b as a weighted sum of at least two or at least three squares of the first, second, third, and fourth magnetic field gradients (e.g., dBx / dx, dBx / dy, dBz / dx, dBz / dy); iv) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D3b; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBx / dy) and the correction factor D3b.

[0113] In one embodiment, the correction factor D3b is calculated as w1*sqr(dBx / dx)+w2*sqr(dBx / dy)+w3*sqr(dBz / dx), where each of w1, w2, and w3 is different from 0.0. In this case, there is no need to determine the slope dBz / dy, so step vi) can be omitted, S1 and S2 need to be able to measure Bx and Bz, and S3 and S4 need to be able to measure Bx but not Bz.

[0114] In one embodiment, the correction factor D3b is calculated as w1*sqr(dBx / dx)+w2*sqr(dBx / dy)+w3*sqr(dBz / dy), where each of w1, w2, and w3 is different from 0.0. In this case, step v) can be omitted because there is no need to determine the slope dBz / dx; S1 and S2 need to be able to measure Bx but not Bz; and S3 and S4 need to be able to measure Bx and Bz.

[0115] In one embodiment, the correction factor D3b is calculated as w1*sqr(dBx / dx)+w2*sqr(dBx / dy)+w3*sqr(dBz / dx)+w4*sqr(dBz / dy), where w1, w2, w3, and w4 are each different from 0.0. In this case, each of S1-S4 must be able to measure Bx and Bz.

[0116] The first angle may be calculated as a function of the ratio of the first magnetic field gradient (dBx / dx) and the square root of the correction factor D3b.

[0117] The second angle may be calculated as a function of the ratio of the second magnetic field gradient (dBx / dy) and the square root of the correction factor D3b.

[0118] In one embodiment, the semiconductor substrate further comprises a fifth magnetic sensor (e.g., Sc) located midway (e.g., C) between the first magnetic sensor (e.g., S1) and the second magnetic sensor (e.g., S2) and configured to determine a magnetic field component (Bxc) oriented in a first direction (e.g., X), and the processing circuitry is configured to: v) determine a quadratic gradient (e.g., d2Bx / dx2) of the first magnetic field component (e.g., Bx) along the first direction (e.g., X); vi) determine a quadratic gradient (e.g., d2Bx / dx2) of the first magnetic field component (e.g., Bx) along the second direction (e.g., Y); It is configured to determine a secondary gradient (e.g., d2Bx / dy2) of the magnetic field component (e.g., Bx) and determine a correction factor D4a as the sum of the squares of these secondary gradients (e.g., d2Bx / dx2, d2Bx / dy2); iii) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D4a; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBx / dy) and the correction factor D4a.

[0119] In this embodiment, D4a = sqr(d2Bx / dx2) + sqr(d2Bx / dy2), and the five sensors S1, S2, S3, S4, Sc must be able to measure Bx, but not necessarily By or Bz.

[0120] The first angle may be calculated as a function of the ratio of the first magnetic field gradient (dBx / dx) and the square root of the correction factor D4a.

[0121] The second angle may be calculated as a function of the ratio of the second magnetic field gradient (dBx / dy) and the square root of the correction factor D4a.

[0122] In one embodiment, at least two of the four magnetic sensors (e.g., S1, S2, S3, S4) are further configured to measure a third magnetic field component (e.g., Bz1, Bz2, Bz3, Bz4) oriented in a third direction (e.g., Z) perpendicular to the substrate, the semiconductor substrate further comprises a fifth magnetic sensor (e.g., Sc) located midway (e.g., C) between the first magnetic sensor (e.g., S1) and the second magnetic sensor (e.g., S2) and configured to determine a magnetic field component (e.g., Bxc) oriented in the first direction (e.g., X) and a magnetic field component (e.g., Bzc) oriented in the third direction (e.g., Z), and the processing circuitry is configured to determine a quadratic gradient (e.g., d2Bx / dx2) of the first magnetic field component (e.g., Bx) along the first direction (e.g., X), a quadratic gradient (e.g., d2Bx / dx2) of the first magnetic field component (e.g., Bx) along the second direction (e.g., Y ... Determine two or more of the secondary gradient of the third magnetic field component (e.g., Bx) along the first direction (e.g., X) (e.g., d2Bx / dy2), the secondary gradient of the third magnetic field component (e.g., Bz) along the first direction (e.g., X) (e.g., d2Bz / dx2), and the secondary gradient of the third magnetic field component (e.g., Bz) along the second direction (e.g., Y) (e.g., d2Bz / dy2), and calculate these secondary magnetic field gradients (e.g., d2Bx / dx2, d2Bx / dy2, d2Bz / dx2, d2 iii) determining a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D4b; and iv) determining a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBy / dx) and the correction factor D4b.

[0123] In one embodiment, the correction factor D4b is calculated as w1*sqr(d2Bx / dx2)+w2*sqr(dB2x / dy2)+w3*sqr(d2Bz / dx2), where w1, w2, and w3 are each different from 0.0. In this case, the secondary gradient d2Bz / dy2 does not need to be determined, S1, S2, and Sc need to be able to measure Bx and Bz, and S3 and S4 need to be able to measure Bx, but not necessarily Bz.

[0124] In one embodiment, the correction factor D4b is calculated as w1*sqr(d2Bx / dx2)+w2*sqr(dB2x / dy2)+w3*sqr(d2Bz / dy2), where w1, w2, and w3 are each different from 0.0. In this case, the secondary gradient d2Bz / dx2 does not need to be determined, S3, S4, and Sc need to be able to measure Bx and Bz, and S1 and S2 need to be able to measure Bx, but not necessarily Bz.

[0125] In one embodiment, the correction factor D4b is calculated as w1*sqr(d2Bx / dx2)+w2*sqr(dB2x / dy2)+w3*sqr(d2Bz / dx2)+w4*sqr(d2Bz / dy2), where w1, w2, w3, and w4 are each different from 0.0. In this case, each of S1, S2, S3, S4, and Sc must be able to measure Bx and Bz.

[0126] In one embodiment, the correction factor D4b is calculated as w1*sqr(d2Bz / dx2)+w2*sqr(d2Bz / dy2), where w1, w2 are each different from 0.0. In this case, the secondary gradients d2Bx / dx2 and d2Bx / dy2 do not need to be determined, and each of S1, S2, S3, S4, and Sc need to be able to measure Bx and Bz.

[0127] The first angle may be calculated as a function of the ratio of the first magnetic field gradient (eg, dBx / dx) and the square root of the correction factor D4b.

[0128] The second angle may be calculated as a function of the ratio of the second magnetic field gradient (eg, dBx / dy) and the square root of the correction factor D4b.

[0129] In one embodiment, the semiconductor substrate comprises or is connected to four magnetic sensors S1, S2, S3, S4 positioned on an imaginary ellipse, the four magnetic sensors S1, S2, S3, S4 including two magnetic pixels S1, S2 positioned on an imaginary line X and spaced apart by a first distance (dx) and two magnetic pixels S3, S4 positioned on an imaginary line Y and spaced apart by a second distance (dy).

[0130] In one embodiment, each of these four magnetic sensors is or comprises a vertical Hall element positioned to measure the Bx component, e.g., as shown in Figures 17, 20, and 21. Optionally, the semiconductor substrate further comprises a temperature sensor, e.g., as shown in Figure 20. Optionally, the semiconductor substrate further comprises a 3D magnetic pixel located at the center of an imaginary ellipse, e.g., as shown in Figure 21. The 3D magnetic pixel may comprise, e.g., a horizontal Hall element and at least two vertical Hall elements, or an IMC and four horizontal Hall elements.

[0131] In one embodiment, each of the sensors S1, S2 comprises an integrated magnetic concentrator (IMC) and at least two horizontal Hall elements arranged to measure the Bx and Bz components, and each of the sensors S3, S4 is or comprises a vertical Hall element arranged to measure the Bx component, for example as shown in FIG. 16.

[0132] In one embodiment, each of the sensors S1, S2 comprises a horizontal Hall element for measuring the Bz component and a vertical Hall element for measuring the Bx component, and each of the sensors S3, S4 is or comprises a vertical Hall element positioned to measure the Bx component, for example as shown in FIG. 17.

[0133] In one embodiment, each of the sensors S1, S2, S3, S4 comprises an integrated magnetic concentrator (IMC) and at least two horizontal Hall elements arranged to measure the Bx and Bz components, for example, as shown in Figure 18. Optionally, the semiconductor substrate may further comprise a fifth sensor S5 arranged at the center of an imaginary ellipse, for example, as shown in Figure 19, also comprising an IMC and at least two horizontal Hall elements.

[0134] In all the above-described embodiments, a magnetoresistive (MR) element may be used instead of the vertical Hall element.

[0135] The present invention also provides a sensor system comprising the magnetic sensor device according to the fourth aspect and the two-pole magnet.

[0136] The two-pole magnet is preferably magnetized in a direction parallel to the semiconductor substrate when the line segment [CP] is oriented substantially perpendicular to the semiconductor substrate (e.g., within a tolerance of ±10° or ±5°).

[0137] According to a fifth aspect, the present invention also provides a sensor device for determining the orientation (e.g., α, β, φ, ψ) of a two-pole magnet, the sensor device comprising a semiconductor substrate comprising or connected to first and second magnetic sensors (e.g., S1, S2) spaced apart in a first direction (e.g., X) by a predefined distance (e.g., dx), each of the first and second sensors (e.g., S1, S2) being capable of measuring a magnetic field component (e.g., Bx1, Bx2) oriented in the first direction (e.g., X). The semiconductor substrate further comprises third and fourth magnetic sensors (e.g., S5, S6) parallel to the semiconductor substrate and spaced apart in a second direction (e.g., Y) perpendicular to the first direction (e.g., X), the third and fourth sensors (e.g., S5, S6) being located on an imaginary line YY that is offset (e.g., dxx) from the perpendicular bisector (e.g., Y) defined by the first and second sensors (e.g., S1, S2), and each of the third and fourth sensors (e.g., S5, S6) detects a magnetic field oriented in a third direction perpendicular to the substrate. components (e.g., Bz5, Bz6), the magnet being movable relative to the sensor device such that a center (P) of the magnet is rotatable about a reference point (Pref) having a predefined position relative to the semiconductor substrate (e.g., above the semiconductor substrate or below the semiconductor substrate, in the plane of the semiconductor substrate), the sensor device further comprising a processing circuit, the processing circuit being configured to: i) measure magnetic field components (e.g., Bx1, Bx2) obtained from the first and second magnetic sensors (e.g., S1, S2) along a first direction (e.g., X); ii) determine a second magnetic field gradient (e.g., dBz / dy) of the magnetic field components (e.g., Bz5, Bz6) obtained from the third and fourth magnetic sensors (e.g., S5, S6) along a second direction (e.g., Y); iii) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx); and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBz / dy).

[0138] The same comments made regarding claim 1 (e.g., regarding the line segment [CP], the first angle α or ψ, the second angle β or φ, the semiconductor substrate and the CMOS substrate) are also applicable here.

[0139] In one embodiment, the magnet is magnetized in a direction substantially parallel to the semiconductor substrate when an imaginary line passing through the center of the magnet (P) and through a reference point (Pref) is oriented substantially perpendicular to the semiconductor substrate.

[0140] In one embodiment, the orthogonal projection of the center (P) of the magnet on the semiconductor substrate substantially coincides with a point (C) located midway between the first sensor (S1) and the second sensor (S2).

[0141] In one embodiment, the magnet is magnetized in a direction substantially perpendicular to an imaginary line passing through the center of the magnet (P) and through a reference point (Pref).

[0142] The same comments made regarding claim 2 (eg, regarding the "neutral position" and possible shapes of the magnet) are also applicable here.

[0143] In one embodiment, each of the first and second magnetic sensors (e.g., S1, S2) is further configured to measure a magnetic field component (e.g., Bz1, Bz2) oriented in a third direction (e.g., Z) perpendicular to the substrate, and the processing circuitry is further configured to v) determine a third magnetic field gradient (e.g., dBz / dx) of the magnetic field component (e.g., Bz1, Bz2) oriented in the third direction (e.g., Z) along the first direction (e.g., X), iii) determine a first angle (e.g., α, ψ) based on the first and third magnetic field gradients (e.g., dBx / dx, dBz / dx), and iv) determine a second angle (e.g., β, φ) based on the second and third magnetic field gradients (e.g., dBz / dy, dBz / dx).

[0144] The first angle may be calculated as a function of the ratio between the first magnetic field gradient (eg, dBx / dx) and the third magnetic field gradient (eg, dBz / dx), for example, as an arctan or atan2 function of the ratio.

[0145] The second angle may be calculated as a function of the ratio of the second magnetic field gradient (eg, dBz / dy) to the third magnetic field gradient (eg, dBz / dx), for example, as an arctan or atan2 function of the ratio.

[0146] In one embodiment, the sensor device further comprises a temperature sensor for measuring a temperature (e.g., the temperature of the magnet or the temperature of the semiconductor substrate), and the processing circuit is configured to: iii) determine a correction factor D1 as a predefined function of the measured temperature; iv) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D1; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBz / dy) and the correction factor D1.

[0147] The first angle may be calculated as a function of the ratio of the first magnetic field gradient (eg, dBx / dx) and the correction factor D1.

[0148] The second angle can be calculated as a function of the ratio of the second magnetic field gradient (eg, dBz / dy) and the correction factor D1.

[0149] In one embodiment, the semiconductor substrate includes a fifth magnetic sensor (e.g., Sc) located midway (e.g., C) between the first magnetic sensor (e.g., S1) and the second magnetic sensor (e.g., S2) and configured to determine two or more of a magnetic field component oriented in a first direction (e.g., X) (e.g., Bxc), a magnetic field component oriented in a second direction (e.g., Byc), and a magnetic field component oriented in a third direction (e.g., Z) (e.g., Bzc). Further provided is a processing circuit configured to determine a correction factor D2 as a sum of the squares of two or more of the magnetic field components (Bxc, Byc, Bzc) measured by the fifth magnetic sensor (Sc); iii) determine a first angle (e.g., α, ψ) based on the first magnetic field gradient (e.g., dBx / dx) and the correction factor D2; and iv) determine a second angle (e.g., β, φ) based on the second magnetic field gradient (e.g., dBz / dy) and the correction factor D2.

[0150] The first angle may be calculated as a function of the ratio of the first magnetic field gradient (eg, dBx / dx) and the square root of the correction factor D2.

[0151] The second angle may be calculated as a function of the ratio of the second magnetic field gradient (eg, dBz / dy) and the square root of the correction factor D2.

[0152] In one embodiment, the first and second magnetic sensors each comprise an integrated magnetic flux concentrator (IMC) and two horizontal Hall elements angularly spaced 180° apart, and the third and fourth magnetic sensors (S5, S6) are horizontal Hall elements without IMCs. Optionally, the substrate further comprises fifth and sixth magnetic sensors, for example, as shown in FIG.

[0153] In an embodiment, each of the first and second magnetic sensors (S1, S2) is or comprises a vertical Hall element arranged to measure the Bx component, and each of the third and fourth magnetic sensors (S5, S6) is a horizontal Hall element, for example, as shown in Figure 25. Optionally, each of the first and second sensors (S1, S2) further comprises a horizontal Hall element.

[0154] The present invention also provides a sensor system comprising the magnetic sensor device according to the fifth aspect and the two-pole magnet.

[0155] The two-pole magnet is preferably magnetized in a direction parallel to the semiconductor substrate when the line segment [CP] is oriented substantially perpendicular to the semiconductor substrate (e.g., within a tolerance of ±10° or ±5°).

[0156] In one embodiment, a sensor system includes a sensor device comprising a semiconductor substrate including or connected to a plurality of spaced apart magnetic sensors (e.g., S1, S2; S1, S2, S3, S4; S1, S2, S5, S6), the sensor device including a processing circuit (e.g., implemented on the same semiconductor substrate or on a second semiconductor substrate) configured to determine at least first and second magnetic field gradients, determine a first angle (e.g., α, ψ) based on the first magnetic field gradient, and determine a second angle (e.g., β, φ) based on the second magnetic field gradient; and a processing circuit (e.g., implemented on the same semiconductor substrate or on a second semiconductor substrate) configured to determine at least first and second magnetic field gradients, determine a first angle (e.g., α, ψ) based on the first magnetic field gradient, and determine a second angle (e.g., β, φ) based on the second magnetic field gradient. and a two-pole magnet movable relative to the sensor device so as to be rotatable around a reference point (e.g., Pref) having a predefined position relative to the semiconductor substrate, wherein the magnet is magnetized in a direction parallel to the semiconductor substrate when an imaginary line passing through the center of the magnet (e.g., P) and the reference point (e.g., Pref) is oriented perpendicular to the semiconductor substrate, or the orthogonal projection of the center of the magnet (e.g., P) on the semiconductor substrate substantially coincides with a point (e.g., C) located midway between the first magnetic sensor (e.g., S1) and the second magnetic sensor (e.g., S2), or the magnet is magnetized in a direction substantially perpendicular to an imaginary line passing through the center of the magnet (e.g., P) and the reference point (e.g., Pref).

[0157] In one embodiment, the plurality of magnetic sensors comprises two sensors (e.g., S1, S2) spaced apart along a first direction (e.g., X), each capable of measuring at least two magnetic field components.

[0158] In one embodiment, the plurality of magnetic sensors comprises four sensors (e.g., S1, S2, S3, S4; S1, S2, S5, S6) including first and second sensors (e.g., S1, S2) spaced apart along a first direction (e.g., X) and third and fourth sensors (e.g., S3, S4; S5, S6) spaced apart in a second direction (e.g., Y), each of the four sensors being capable of measuring at least one magnetic field component.

[0159] In one embodiment, the plurality of magnetic sensors comprises magnetic sensor elements selected from the group consisting of horizontal or vertical Hall elements.

[0160] In one embodiment, the plurality of magnetic sensors comprises magnetic sensor elements that are horizontal Hall elements.

[0161] In one embodiment, the plurality of magnetic sensors comprises magnetic sensor elements that are vertical Hall elements.

[0162] In an embodiment according to any of the first, second, third, fourth or fifth aspects, the sensor device comprises at least one CMOS substrate (i.e., a semiconductor substrate fabricated using a CMOS compatible process).

[0163] Particular and preferred aspects of the invention are set out in the accompanying independent and dependent claims. Features from the dependent claims may be combined with features of the independent claims and with features of other dependent claims as appropriate and not merely as explicitly set out in the claims.

[0164] These and other aspects of the invention will be apparent from and elucidated with reference to the embodiments described hereinafter. [Brief explanation of the drawings]

[0165] [Figure 1]1 is a schematic diagram of a magnetic position sensor system with a magnet that is pivotable relative to the sensor device with two degrees of freedom. [Figure 2] We show how the random orientation of the line segment [CP] can be represented by two angles, for example, ψ and φ, or α and β. [Figure 3A] 1 is a schematic block diagram of a sensor structure as may be used in an embodiment of the present invention, comprising two magnetic sensors spaced apart along an X-axis by a predefined distance Δx, each magnetic sensor comprising an integrated magnetic concentrator (IMC) and two horizontal Hall elements located on the X-axis. [Figure 3B] 3B illustrates a variation of the sensor structure of FIG. 3A that may be used in embodiments of the present invention. [Figure 4A] 1 is a schematic block diagram of a sensor structure, such as may be used in an embodiment of the present invention, comprising a disk-shaped integrated magnetic concentrator (IMC) and four horizontal Hall elements positioned around the periphery of the disk and angularly spaced by multiples of 90°. This sensor structure is capable of measuring three orthogonal magnetic field components and is also referred to as a "3D magnetic pixel." [Figure 4B] 4B illustrates a variation of the sensor structure of FIG. 4A that may be used in embodiments of the present invention. [Figure 5] 1 is a schematic block diagram of another sensor structure that may be used in embodiments of the present invention, comprising a horizontal Hall element and four vertical Hall elements arranged adjacent to the periphery of the horizontal Hall element. This sensor structure is also capable of measuring three orthogonal magnetic field components and is therefore a "3D magnetic pixel." [Figure 6A] 6A is a schematic diagram of a cylindrical magnet with its axis substantially parallel to the semiconductor substrate when the magnet is in its "rest position" or "neutral position" (ψ=0° and φ=0°). Figure 6A also gives an impression of the magnetic field lines passing at the first sensor location S1 and the second sensor location S2 for ψ=0°. [Figure 6B]6B is a schematic diagram of a cylindrical magnet with its axis substantially parallel to the semiconductor substrate when the magnet is in its "rest position" or "neutral position" (ψ=0° and φ=0°). Figure 6B also gives an impression of the magnetic field lines passing at the first sensor location S1 and the second sensor location S2 for ψ=30°. [Figure 7A] FIG. 6B shows an enlarged 3D perspective view of a sensor system such as that shown in FIG. 6A without magnetic field lines. [Figure 7B] Simulation results are presented showing how the magnetic field gradient dBx / dx varies as a function of ψ for different values ​​of dx. [Figure 7C] Simulation results are shown showing how the magnetic field difference ΔBz or gradient dBz / dx varies as a function of ψ for different values ​​of dx. [Figure 8A] (top) shows a side view in the X direction of Figure 6A, and Figure 8A (bottom) shows a top view of the semiconductor substrate of Figure 6A when the magnet is in its "neutral position". The impression of the magnetic field vector is shown at several locations within the substrate (not all of which are necessarily sensed by the magnetic sensor). [Figure 8B] (top) shows a side view in the X direction of Fig. 6B, and Fig. 8B (bottom) shows a top view of the semiconductor substrate of Fig. 6B when the magnet is tilted by φ = 30°. The impression of the magnetic field vector is shown at several positions within the substrate (not all of which are necessarily sensed by the magnetic sensor). [Figure 9A] FIG. 8B shows an enlarged 3D perspective view of a sensor system such as that shown in FIG. 8A without magnetic field lines. [Figure 9B] Simulation results are presented showing how the magnetic field gradient dBy / dx varies as a function of φ for different values ​​of dx. [Figure 9C] Simulation results are presented showing how the magnetic field gradient dBz / dx varies as a function of φ for different values ​​of dx. [Figure 10A]2 is a schematic diagram of a sensor arrangement (referred to as a "dual disk") such as may be used in embodiments of the present invention, for example in the sensor device of FIG. 1, and a set of equations for determining the orientation of a magnet as a function of ΔBx12 (or dBx / dx) to determine a first angle ψ, and as a function of ΔBy12 (or dBy / dx) to determine a second angle φ. [Figure 10B] A variation of FIG. 10A is shown to show that the two disks do not necessarily have to be located near the corners of the semiconductor substrate, and to demonstrate that the orientation of the Hall plate can be rotated relative to the semiconductor substrate. [Figure 10C] A variation of FIG. 10A is shown to show that the two disks do not necessarily have to be located near the corners of the semiconductor substrate, and to demonstrate that the orientation of the Hall plate can be rotated relative to the semiconductor substrate. [Figure 10D] A variation of FIG. 10A is shown to show that the two disks do not necessarily have to be located near the corners of the semiconductor substrate, and to demonstrate that the orientation of the Hall plate can be rotated relative to the semiconductor substrate. [Figure 11] FIG. 10 is a schematic diagram of another sensor arrangement that may be used in embodiments of the present invention, comprising two 3D magnetic pixels, each having a horizontal Hall element and four vertical Hall elements. [Figure 12] 12 shows a variation of FIG. 11 comprising two 2D magnetic pixels and further comprising a temperature sensor, as can be used in an embodiment of the present invention. [Figure 13] 12 shows another variation of FIG. 11, which may be used in embodiments of the present invention, comprising two 2D magnetic pixels and a 3D magnetic pixel between them. [Figure 14A] 8B shows a variation of FIG. 8A with a qualitative impression of the magnetic field vector at five different locations. [Figure 14B] A variation of FIG. 8B is shown with a qualitative impression of the magnetic field vector at five different locations. [Figure 15] FIG. 9B shows an enlarged 3D perspective view of FIG. 9A. [Figure 16]2 is a schematic diagram of a sensor arrangement such as may be used in embodiments of the present invention, for example in the sensor device of FIG. 1, and a set of equations for determining the orientation of a magnet as a function of ΔBx (or dBx / dx) to determine a first angle ψ, and as a function of ΔBx (or dBx / dy) to determine a second angle φ. The sensor arrangement comprises two 2D magnetic pixels on the X axis and two 1D magnetic pixels on the Y axis. [Figure 17] 16, which also includes two 2D magnetic pixels on the X axis and two 1D magnetic pixels on the Y axis, as may be used in embodiments of the present invention. [Figure 18] 16, which comprises four 2D magnetic pixels and which may be used in embodiments of the present invention. [Figure 19] 16, which may be used in embodiments of the present invention, comprising four 1D magnetic pixels and, optionally, a temperature sensor. [Figure 20] 16, which includes four 1D magnetic pixels and a 3D magnetic pixel between them, as may be used in embodiments of the present invention. [Figure 21] 16, which comprises five 2D magnetic pixels and which may be used in embodiments of the present invention. [Figure 22A] Shows the same information as Figure 8A. [Figure 22B] A variation of FIG. 8B, further giving the impression of magnetic field vectors at sensor locations S5, S6 lying on a line YY parallel to Y, but offset from Y by a distance dxx>0. [Figure 23A] 22B is a 3D perspective view of a special case of FIG. 22B, which is a variation of FIG. 15, where dxx=(dx / 2) and line YY passes through S2. [Figure 23B] Simulation results showing how the magnetic field gradient dBz / dx varies as a function of φ are shown. [Figure 23C]10 shows simulation results showing how the magnetic field difference measured at sensor locations S5, S6 (or gradient dBz / dy at locations offset from C) varies as a function of φ. [Figure 24A] FIG. 23B is a schematic diagram of a sensor arrangement that can be used in an embodiment of the present invention, using magnetic field components measured at the four sensor locations S1, S2, S5, and S6 shown in FIG. 23A, and shows a set of equations for determining the orientation of the magnet as a function of ΔBx12 (or dBx / dx) to determine the first angle ψ, and as a function of ΔBz56 (or dBz / dy at a position offset from C) to determine the second angle φ. [Figure 24B] A variation of FIG. 24A is shown to illustrate that the two IMC disks do not necessarily need to be positioned near the corners of the semiconductor substrate, and to demonstrate that the orientation of the Hall plate can be rotated relative to the semiconductor substrate. [Figure 24C] A variation of FIG. 24A is shown to illustrate that the two IMC disks do not necessarily need to be positioned near the corners of the semiconductor substrate, and to demonstrate that the orientation of the Hall plate can be rotated relative to the semiconductor substrate. [Figure 24D] A variation of FIG. 24A is shown to illustrate that the two IMC disks do not necessarily need to be positioned near the corners of the semiconductor substrate, and to demonstrate that the orientation of the Hall plate can be rotated relative to the semiconductor substrate. [Figure 25] 24B shows a variation of FIG. 24A with two 2D magnetic pixels on the X axis and four horizontal Hall elements located on an imaginary square, as may be used in embodiments of the present invention. [Figure 26] 24A shows another variation of FIG. 24A that may be used in embodiments of the present invention, with two vertical Hall elements on the X axis and two horizontal Hall elements on the YY axis that are perpendicular to the X axis but offset from point C midway between S1 and S2. This sensor device further comprises a temperature sensor. [Figure 27]24B shows another variation of FIG. 24A that may be used in embodiments of the present invention, with two vertical Hall elements on the X axis and four horizontal Hall elements located on an imaginary square, the sensor device further comprising a temperature sensor. [Figure 28] 1 shows an electrical block diagram of a circuit that can be used in the sensor device proposed by the present invention.

[0166] The drawings are only schematic and non-limiting. In the drawings, the size of some of the elements may be exaggerated and not drawn to scale for illustrative purposes. Any reference signs in the claims should not be construed as limiting the scope. In different drawings, the same reference signs refer to the same or similar elements. DETAILED DESCRIPTION OF THE INVENTION

[0167] The present invention will be described with respect to particular embodiments and with reference to certain drawings but the invention is not limited thereto but only by the claims.

[0168] Terms such as first, second, etc. in this specification and claims are used to distinguish between similar elements and are not necessarily used to describe order, temporally, spatially, sequentially, or in any other manner. Terms so used are interchangeable under appropriate circumstances, and it is understood that embodiments of the invention described herein are capable of operating in orders other than those described or illustrated herein.

[0169] Terms such as up, down, and the like in this specification and claims are used for descriptive purposes and are not necessarily used to describe relative positions. The terms so used are interchangeable under appropriate circumstances, and it is understood that the embodiments of the invention described herein are capable of operation in orientations other than those described or illustrated herein.

[0170] It should be noted that the term "comprising" used in the claims should not be interpreted as being limited to the means listed thereafter, nor does it exclude other elements or steps. Thus, when referred to, it should be interpreted as specifying the presence of the stated features, elements, steps or components, but not excluding the presence or addition of one or more other features, elements, steps, components, or groups thereof. Thus, the scope of the expression "a device comprising means A and means B" should not be limited to a device consisting only of components A and B. This means that, in the context of the present invention, the only relevant components of the device are A and B.

[0171] References throughout this specification to "one embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic described in connection with an embodiment is included in at least one embodiment of the present invention. Thus, the appearances of the phrase "in one embodiment" or "in an embodiment" in various places throughout this specification do not necessarily all refer to the same embodiment, although they may. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments, as would be apparent to one of ordinary skill in the art from this disclosure.

[0172] Similarly, in describing exemplary embodiments of the invention, it should be understood that various features of the invention may be grouped together in a single embodiment, drawing, or description for the purpose of streamlining the disclosure and facilitating an understanding of one or more of the various inventive aspects. This method of disclosure, however, is not to be interpreted as reflecting an intention that the claimed invention requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the Detailed Description are expressly incorporated into this Detailed Description, with each claim standing on its own as a separate embodiment of the present invention.

[0173] Furthermore, although some embodiments described herein include some features that are included in other embodiments but not others, as will be understood by those skilled in the art, combinations of features from different embodiments are meant to be within the scope of the present invention and form different embodiments. For example, in the following claims, any of the claimed embodiments can be used in any combination.

[0174] In the description provided herein, numerous specific details are set forth. However, it will be understood that embodiments of the present invention may be practiced without these specific details. In other instances, well-known methods, structures, and techniques have not been shown in detail in order not to obscure an understanding of this description.

[0175] In this document, unless expressly stated otherwise, the term "magnetic sensor device" or "sensor device" preferably refers to a device comprising at least one "magnetic sensor" or at least one magnetic "sensor element" integrated on a semiconductor substrate. The sensor device may be included in a package also called a "chip", but this is not absolutely necessary.

[0176] In this document, the terms "sensor element" or "magnetic sensor element" or "magnetic sensor" may refer to a component, or group of components, or sub-circuit, or structure capable of measuring a magnetic quantity, such as, for example, a magnetoresistive (MR) element, a GMR element, an XMR element, a horizontal Hall plate, a vertical Hall plate, a Wheatstone bridge including at least one (but preferably four) magnetoresistive elements, etc., or a combination thereof.

[0177] In certain embodiments of the present invention, the terms "magnetic sensor" or "magnetic sensor structure" may refer to a configuration comprising one or more integrated magnetic concentrators (IMCs), also known as integrated magnetic flux concentrators, and one or more horizontal Hall elements arranged near the periphery of the IMCs, for example, a disk-shaped IMC with four horizontal Hall elements angularly spaced by multiples of 90°.

[0178] In this document, the expressions "2D magnetic sensor" or "2D magnetic pixel" mean the same thing.

[0179] In this document, the expressions "3D magnetic sensor" or "3D magnetic pixel" mean the same thing.

[0180] In this document, the expressions "in-plane component of the magnetic field vector" and "projection of the magnetic field vector in the sensor plane" mean the same thing. If the sensor device is or includes a semiconductor substrate, this also means "magnetic field component parallel to the semiconductor plane". These components may be labeled Bx and By.

[0181] In this document, the expressions "out-of-plane component of the magnetic field vector" and "Z component of the vector" and "projection of the vector on an axis perpendicular to the sensor plane" mean the same thing. This component can be labeled Bz.

[0182] Embodiments of the present invention are typically described using a Cartesian coordinate system having three axes X, Y, Z fixed to the sensor device, with the X and Y axes parallel to the substrate and the Z axis perpendicular to the substrate.

[0183] In this document, the expressions "spatial differential" or "derivative" or "spatial gradient" or "gradient" are used synonymously. If the order of the derivative is not explicitly mentioned, a first-order gradient is meant unless otherwise clear from the context. In the context of the present invention, the gradient is typically determined as the difference between two values ​​measured at two locations spaced apart along a particular direction. In theory, the gradient is typically calculated as the difference between the two values ​​divided by the distance (e.g., dx) between the sensor locations, but in practice, the division by the distance is often omitted since the measurement signal needs to be scaled anyway. Thus, in the context of the present invention, the expressions "magnetic field difference" and "magnetic field gradient" can be used interchangeably.

[0184] In this application, horizontal Hall plates are typically referred to as H1, H2, etc., and signals obtained from these horizontal Hall plates are typically referred to as h1, h2, etc., vertical Hall plates are typically referred to as V1, V2, etc., and signals from vertical Hall plates are typically referred to as v1, v2, etc.

[0185] In the context of the present invention, the expressions arctan(x / y), atan2(x,y), and arccot(y / x) are considered equivalent.

[0186] The function atan2() is the arctangent function of two arguments. The function sqr() is the square function. The function sqrt(.) is the square root function.

[0187] The function atan2 is a two-argument arctangent function, as is known in the art.

[0188] Unless otherwise clear from the context, in this document Δx and dx mean the same thing.

[0189] In this document, S1 can refer to the first sensor location or the first magnetic sensor, depending on the context. Similarly for S2, S3, S4, S5, and S6. In the context of the present invention, S1 and S2 are located on the X-axis, S3 and S4 are located on the Y-axis perpendicular to the X-axis and passing through point C midway between S1 and S2, and S5 and S6 are located on the axis YY perpendicular to the X-axis but offset from the Y-axis by a distance dxx>0. The distance dxx may be greater than, equal to, or less than (dx / 2). The distance between S3 and S4 and the distance between S5 and S6 are denoted by "dy." The value of dy may be greater than, equal to, or less than dx.

[0190] The present invention relates to a magnetic position sensor device and system for measuring the orientation of a magnet that is pivotable about a fixed reference point "Pref." This fixed reference point may be located on a semiconductor substrate or may be located at a predefined distance above or below the semiconductor substrate. In the drawings of this disclosure, the fixed reference point Pref is typically shown to be located on the semiconductor substrate (and coincide with point C midway between a first sensor location S1 and a second sensor location S2) for illustrative purposes, but it is expressly noted that the present disclosure is not limited thereto.

[0191] It should also be noted that mechanical assemblies configured to allow such magnet movement are known in the art and therefore need not be detailed here.

[0192] In preferred embodiments, the system has one or more or all of the following characteristics: good or improved accuracy, low or reduced sensitivity to temperature variations, low or reduced sensitivity to mounting tolerances, low or reduced sensitivity to magnet demagnetization, low or reduced sensitivity to external disturbance fields, and preferably all of these.

[0193] Refer to the figure.

[0194] FIG. 1 is a schematic diagram of a magnetic position sensor system 100 comprising a two-pole magnet 101 and a sensor device 102 .

[0195] The sensor device 102 comprises a semiconductor substrate (not shown in FIG. 1 ) to which a coordinate system having three orthogonal axes X, Y, and Z is attached, with axes X and Y parallel to the semiconductor substrate and axis Z perpendicular to the semiconductor substrate.

[0196] The magnet is movable relative to the sensor device 102 such that the center of the magnet (P) is pivotable about a reference point (Pref) having a predefined position relative to the semiconductor substrate. The sensor device 102 comprises a semiconductor substrate, for example, a silicon substrate fabricated via a CMOS compatible process. The reference point Pref can be located in the plane of the semiconductor substrate, above the semiconductor substrate, or below the semiconductor substrate, but to avoid complicating the drawing, the reference point is shown as being located on the semiconductor substrate and coinciding with point "C".

[0197] The magnet 101 shown in FIG. 1 is a two-pole magnet with a cylindrical shape, but other shapes can also be used; for example, the magnet can be a two-pole bar magnet or a two-pole sphere magnet. The magnet 101 is magnetized along an axis oriented parallel to the semiconductor substrate when the magnet is in its "neutral position," i.e., when the center P of the magnet is positioned perpendicularly above point C. The distance between the magnet 101 and a reference point "Pref" is constant, and the system has two degrees of freedom. The task of the sensor device 102 is to determine the orientation of the magnet 101.

[0198] Orientation can be uniquely defined, for example, by two angles φ and ψ, where φ is a negative or positive angle of the orthogonal projection of the line segment [CP] in the YZ plane relative to the Z axis, and ψ is a negative or positive angle of the orthogonal projection of the line segment [CP] in the XZ plane relative to the Z axis. When the magnet is in the "neutral position," φ=0° and ψ=0°. The magnet is preferably movable in a range of φ from at least -30° to +30°, and in a range of ψ from -30° to +30°, although smaller or larger ranges are naturally also envisioned. However, specifying orientation by φ and ψ is not the only possible way.

[0199] FIG. 2 shows another way of defining the orientation of a vector of constant length [CP] starting from a reference point "C" and ending at a point "P" on an imaginary sphere. While the vector [CP] is not shown, a first orthogonal projection [CA] of the vector [CP] on the plane XZ is shown, and a second orthogonal projection [CB] of the vector [CP] on the plane YZ is shown. The position of the magnet can also be defined by a first angle α between the positive X-axis and the vector [CA], and a second angle β between the positive Y-axis and the vector [CB]. As an example, when the magnet axis is oriented perpendicular to the plane XY (i.e., perpendicular to the semiconductor substrate), also referred to as the "neutral position," then α = 90° and β = 90°. This corresponds to the orientation of φ = 0° and ψ = 0° described above.

[0200] The following formula applies: Bx = B*cos(α)*sin(β) [1] By=B*cos(β)*sin(α) [2] Bz=B*sin(β)*sin(α) [3] Division of [3] and [1] yields: (Bz / Bx)=tan(α) [4] (Bz / By)=tan(β) [5] where Bx is the magnetic field component oriented in the X direction, By is the magnetic field component oriented in the Y direction, Bz is the magnetic field component oriented in the Z direction, and B is the magnitude of the magnetic field vector. Therefore, by measuring Bx, By, Bz at a reference point Pref, the angles α and β can be calculated, but this solution is very sensitive to external influences and / or aging effects, such as temperature fluctuations, mounting tolerances, magnet demagnetization, disturbance fields, etc.

[0201] In preferred embodiments, the angles α and β have values ​​in the range 90°±30°, or in the range 90°±40°, or in the range 90°±50°, or in the range 90°±60°.

[0202] 3A is a schematic block diagram of a sensor structure that may be used in embodiments of the present invention. The sensor structure includes two magnetic sensors S1 and S2 spaced apart along the X axis by a predefined distance Δx. Each magnetic sensor includes an integrated magnetic concentrator (IMC) and two horizontal Hall elements located on the X axis.

[0203] Formulas are provided for calculating the two orthogonal magnetic field components Bx1, Bz1, Bx2, and Bz2 from the sensor signals h1, h2, h3, and h4 provided by the horizontal Hall elements H1, H2, H3, and H4, respectively. It should be noted that in practice, the signals obtained from the Hall elements are amplified or scaled in a known manner, but for simplicity of explanation, the scaling factors are omitted here.

[0204] From the component values ​​Bx1 and Bx2, the magnetic field difference ΔBx12 = (Bx2 - Bx1) or the magnetic field gradient dBx / dx can be derived. From the component values ​​Bz1 and Bz2, the magnetic field difference ΔBz12 = (Bz2 - Bz1) or the magnetic field gradient dBz / dx can be derived. The gradient is highly insensitive to external magnetic disturbance fields. It should be noted that the division by the distance dx is typically omitted because the signal needs to be scaled anyway. Nevertheless, the notation dBz / dx is convenient because it makes clear that the component Bz (oriented in the Z direction) is measured at two locations separated by a distance dx in the X direction. The gradient dBz / dx is therefore referred to as the "magnetic field gradient of the Bz component along the X direction."

[0205] In embodiments of the present invention, the value of dx may be a value in the range of 1.0 mm to 3.0 mm, or a value in the range of 1.5 mm to 2.5 mm. The IMC may have a disk shape with a diameter in the range of 150 μm to 250 μm, e.g., in the range of 170 μm to 230 μm, e.g., equal to about 200 μm. The horizontal Hall element may have a substantially square shape with a length and width in the range of about 15 μm to about 25 μm.

[0206] Figure 3B shows a variation of the sensor structure of Figure 3A, as may be used in embodiments of the present invention, in which the Hall element is rotated 45° relative to that of Figure 3A. The same equations apply.

[0207] FIG. 4A is a schematic block diagram of a sensor structure 300 that may be used in embodiments of the present invention. The sensor structure includes a disk-shaped integrated magnetic concentrator (IMC) and four horizontal Hall elements H1-H4 positioned around the disk and angularly spaced by multiples of 90°. This sensor structure can measure three orthogonal magnetic field components at the center of the IMC disk and is also referred to as a "3D magnetic pixel." Equations are provided for calculating the three orthogonal magnetic field components Bx, By, and Bz from the sensor signals h1, h2, h3, and h4 provided by the horizontal Hall elements H1, H2, H3, and H4, respectively. It should be noted that, in practice, the signals obtained from the Hall elements are amplified or scaled in a known manner, but for simplicity of explanation, the scaling factors are omitted here.

[0208] Figure 4B shows a variation of the sensor structure of Figure 4A, as may be used in embodiments of the present invention, in which the Hall element is rotated 45° relative to that of Figure 4A. The same equations apply.

[0209] FIG. 5 is a schematic block diagram of another sensor structure that may be used in embodiments of the present invention. This sensor structure includes a horizontal Hall element H1 and four vertical Hall elements V1-V4 arranged near the periphery of the horizontal Hall element. This sensor structure is also referred to as a "3D magnetic pixel" because it can measure three orthogonal magnetic field components Bx, By, and Bz at the center of H1. Equations are provided for calculating the three orthogonal magnetic field components Bx, By, and Bz from the sensor signals h1, v1, v2, v3, and v4 provided by the horizontal Hall element H1 and the vertical Hall elements V1, V2, V3, and V4, respectively. It should be noted that, in practice, the signals obtained from the Hall elements are amplified or scaled in a known manner; however, for simplicity, the scaling factors are omitted here.

[0210] It should be noted that using four vertical Hall elements to measure Bx and By is not absolutely necessary, but more accurate results can be obtained by adding or averaging the signals (v1 and v3) to calculate Bx and adding or averaging the signals (v2 and v4) to calculate By.

[0211] FIG. 6A is a schematic diagram of a cylindrical magnet 601 having its axis oriented substantially parallel to a semiconductor substrate 603 when the magnet is in its “rest position” or “neutral position” (ψ=0° and φ=0°).

[0212] 6A also gives an impression of the magnetic field lines at the first sensor location S1 and the second sensor location S2, indicated schematically by black dots. A point C midway between these two sensor locations S1 and S2 is also shown. In some embodiments of the invention, there may also be a magnetic sensor positioned at point C, but this is not absolutely necessary. When the magnet 601 is in its neutral position (as shown in FIG. 6A), the line segment [CP] is oriented perpendicular to the semiconductor substrate, and therefore the orthogonal projection of the magnet's center P on the substrate 603 coincides with point C.

[0213] Figure 6B gives an impression of the magnetic field lines at the first sensor location S1 and the second sensor location S2 when the magnet is rotated in the XZ plane so that the line segment [CP] forms an angle of about 30° with the X axis. By comparing Figures 6A and 6B, it can be seen that the field lines at S1 and S2 change as a function of ψ (or α), but that it is impossible for an ordinary human to predict what this function will look like.

[0214] FIG. 7A shows an enlarged 3D perspective view of a sensor system like that shown in FIG. 6A, but without showing the magnetic field lines.

[0215] For a cylindrical magnet 701 having a diameter of 4.0 mm and a height of 4.0 mm, positioned at a distance "g" between the substrate and the magnet of 3.0 mm, computer simulations were performed for various distances dx between the two sensor locations S1 and S2, namely, dx = 1.1 mm, dx = 1.6 mm, and dx = 2.2 mm, to determine how the magnetic field difference ΔBx12 = (Bx2 - Bx1), also referred to as dBx / dx, varies as a function of ψ. The results are shown in Figure 7B.

[0216] Thus, by storing this relationship for a particular value of dx in the sensor device and measuring the values ​​of Bx1 and Bx2, the angle ψ can be determined. This relationship may be stored in any suitable manner, for example, by a mathematical formula or a look-up table in non-volatile memory. Such a solution (determining ψ based solely on dBx / dx) works well in environments where the temperature is relatively constant. Therefore, for certain applications, such a solution may be sufficiently accurate.

[0217] In applications where higher precision is required, for example in industrial, robotic or automotive applications, certain corrections may be required to reduce the dependence of the results on temperature variations, and / or to reduce the dependence of the results on installation tolerances (for example, a larger or smaller value of "g"), and / or to reduce the dependence of the results on aging effects (such as demagnetization).Several solutions are described, for example, using a second gradient dBz / dx, or using a correction value D1 as a function of temperature, or using a correction value D2 indicative of the norm of the magnetic field, or using a correction value D3 indicative of the norm of the gradient magnetic field, or using a correction value D4 based on one or more secondary gradients.

[0218] 7C shows simulation results illustrating how the magnetic field difference ΔBz12 = Bz2 - Bz1 or magnetic field gradient dBz / dx varies as a function of ψ for different values ​​of dx. Solutions based on both dBx / dx and dBz / dx are described in further detail (see, e.g., FIG. 10A), although other solutions are provided as well (see, e.g., FIGS. 11-13).

[0219] Therefore, the first angle ψ can be determined based on dBx / dx, but the inventors also needed to find a solution for determining φ.

[0220] To the best of the inventors' knowledge, Figures 8A and 8B are not known in the art but are based on the inventors' imagination.

[0221] FIG. 8A (top) shows a side view (in the X direction) of FIG. 6A; Figure 8A (bottom) shows a top view of the semiconductor substrate of Figure 6A when magnet 801 is in its "neutral position" (i.e., ψ=0° and φ=0°). Also shown is a qualitative impression of the magnetic field vectors as they would be measured at several locations S1, S2, C on the substrate (if suitable sensors were present at these locations).

[0222] FIG. 8B (top) shows a side view (in the X direction) of FIG. 6B; Figure 8B (bottom) shows a top view of the semiconductor substrate of Figure 6B when the magnet is tilted by φ = 30° in the YZ plane. A qualitative impression of the magnetic field vectors as they would be measured at the locations S1, S2, and C is also shown.

[0223] Surprisingly, the inventors found that the magnetic field vectors at S1 and S2 also vary as a function of the value of φ, particularly By1 and By2, without the need for other sensor locations. In particular, the inventors were surprised that it was possible to measure the angle φ using only two sensors located on the line X. This is highly counterintuitive.

[0224] The solution where the angle φ is derived from By1 and By2, more specifically from (By2-By1) or dBy / dx, is further explained in FIGS. 9A-13.

[0225] Figure 9A shows an enlarged 3D perspective view of a sensor system 900 similar to that shown in Figure 8A, without showing the magnetic field lines. A semiconductor substrate 903 comprises two 3D magnetic pixels, each capable of measuring three orthogonal magnetic field components.

[0226] For a cylindrical magnet 901 having a diameter of 4.0 mm and a height of 4.0 mm, positioned with a distance "g" between the substrate and the magnet of 3.0 mm, computer simulations were performed for various distances dx between the two sensor locations S1 and S2, namely, dx = 1.1 mm, dx = 1.6 mm, and dx = 2.2 mm, to determine how the magnetic field gradient ΔBy12 = (By2 - By1), also referred to as dBy / dx, varies as a function of φ. The results are shown in FIG. 9B.

[0227] Thus, by storing this relationship for a particular value of dx in the sensor device and measuring the values ​​of By1 and By2, the angle φ can be determined. This relationship may be stored in any suitable manner, for example, by a mathematical formula or a look-up table in non-volatile memory. Such a solution (determining φ based solely on dBy / dx) works well in environments where the temperature is relatively constant. Therefore, for certain applications, such a solution may be sufficiently accurate.

[0228] In applications where greater precision is required, such as industrial applications, or robotic applications, or automotive applications, some kind of correction to φ may also be required. Again, several solutions are described, for example, using a second gradient dBz / dx (depending on ψ), or using a correction value D1 as a function of temperature, or using a correction value D2 indicating the norm of the magnetic field, or using a correction value D3 indicating the norm of the gradient magnetic field, or using a correction value D4 based on one or more secondary gradients.

[0229] Figure 9C is a copy of Figure 7C. Solutions based on both dBy / dx and dBz / dx are described in further detail (see, e.g., Figure 10A), but other solutions are provided as well (see, e.g., Figures 11-13).

[0230] Therefore, the first angle ψ can be determined based on dBx / dx, and the second angle φ can be determined based on dBy / dx. Embodiments of the present invention based on this principle are described in Figures 10A to 13.

[0231] FIG. 10A is a schematic diagram of a sensor arrangement (referred to as a "dual disk") that may be used in embodiments of the present invention, for example in the sensor device of FIG. 1, and shows a set of equations for determining the orientation of the magnet as a function of ΔBx12 (or dBx / dx) to determine the first angle ψ, and as a function of ΔBy12 (or dBy / dx) to determine the second angle φ.

[0232] 10B, 10C, and 10D show some variations of Fig. 10A, showing that the semiconductor substrate does not necessarily have to have a square shape, and that the two IMC disks do not necessarily have to be located near the corners of the semiconductor substrate, and that the orientation of the Hall plate can be rotated relative to the semiconductor substrate, and the same formulas mentioned in Fig. 10A are applicable.

[0233] FIG. 11 is a schematic diagram of another sensor arrangement 1103, which can be considered a variation of the sensor arrangement of FIG. 10A.

[0234] The sensor arrangement 1103 comprises two 3D magnetic pixels, each having a horizontal Hall element and four vertical Hall elements. Equations are provided for determining the first angle ψ and the second angle φ.

[0235] 11 (not shown), some of the vertical Hall elements are omitted. For example, V2 and V4 may be omitted from S1, V5 and V8 may be omitted from S2, and the following formulas may be used: Bx1=v1; By1=v3; Bx2=v6; By2=v7.

[0236] For example, the same comments made in FIGS. 10A-10D regarding the location and orientation of the sensor relative to the semiconductor substrate, and the size and shape of the substrate, are also applicable here, mutatis mutandis.

[0237] Figure 12 shows another variation of Figure 11, comprising two 2D magnetic pixels, optionally further comprising a temperature sensor. In this embodiment, sensors S1 and S2 cannot measure Bz1 and Bz2, and therefore the sensor device cannot determine dBz / dx.

[0238] The temperature of the magnet can be measured using a temperature sensor (e.g., a thermocouple, or a thermistor, or a temperature dependent resistor) attached to the magnet and electrically connected to the sensor device, or can be estimated using a temperature sensor "T" incorporated into the sensor device, for example, embedded in a semiconductor substrate.

[0239] If no temperature sensor is present, this sensor arrangement may be used to determine the first angle ψ based on dBx / dx and the second angle φ based on dBy / dx without compensation.

[0240] If a temperature sensor is present, a temperature, e.g., the temperature of the magnet or the temperature of the semiconductor substrate, can be measured, and the correction value D1 can be determined as a predefined function of the measured temperature, and the first angle ψ can be calculated based on dBx / dx and based on the value D1, e.g., as a function of the ratio between dBx / dx and D1, e.g., as the arcsine function of said ratio, and the second angle φ can be calculated based on dBy / dx and based on the value D1, e.g., as a function of the ratio between dBy / dx and D1, e.g., as the arcsine function of said ratio.

[0241] FIG. 13 shows another semiconductor substrate 1303 having a sensor arrangement that can be considered as another variation of FIG. 11 or as a variation of FIG.

[0242] The sensor arrangement of Figure 13 comprises two 2D magnetic pixels separated by a distance dx along the X direction and a 3D magnetic pixel between them, e.g., halfway between them. The 2D magnetic pixels are configured to measure the Bx and By components, respectively. The 3D sensor is configured to measure three orthogonal magnetic field components Bxc, Byc, and Bzc.

[0243] The magnetic field components measured by the 3D sensor can be used to determine the norm of the magnetic field at point C, which norm is used to correct the first gradient dBx / dx and the second gradient dBy / dx. The correction value D2 can be calculated, for example, as the sum of the squares of two or three of these magnetic field components, e.g., D2=sqr(Bxc)+sqr(Byc)+sqr(Bzc).

[0244] The first angle ψ may be determined as a function of dBx / dx with or without a correction value D2, e.g., as a function of dBx / dx and √D2, e.g., as a function of the ratio of dBx / dx to √D2, e.g., as the arcsine function of said ratio.

[0245] The second angle φ may be determined as a function of dBy / dx with or without the correction value D2, e.g. as a function of dBy / dx and √D2, e.g. as a function of the ratio of dBy / dx to √D2, e.g. as the arcsine function of said ratio.

[0246] In a variant, D2 is calculated as sqr(Bxc)+sqr(Bzc) and the vertical Hall elements V11 and V12 can be omitted. In a further variant, the 3D magnetic pixel Sc has an IMC and two horizontal Hall elements for measuring Bxc and Bzc.

[0247] In a variant, the sensor Sc comprises an IMC and four horizontal Hall elements.

[0248] In a variant, sensors S1 and S2 each have an IMC and two or four horizontal Hall elements, and sensor Sc has an IMC with two or four horizontal Hall elements.

[0249] 7A-13, another correction factor D3 is determined based on the norm of one or more first-order gradients selected from dBx / dx, dBy / dx, and dBz / dx. Depending on which gradients are used, sensors S1 and S2 may be 2D or 3D sensors, and a magnetic sensor is not required at point C. More specifically, in one example, D3 is calculated as sqr(dBx / dx) + sqr(dBy / dx) + sqr(dBz / dx), or as sqr(dBy / dx) + sqr(dBz / dx), or as sqr(dBx / dx), and pixels S1 and S2 are 3D magnetic pixels. In another example, D3 is calculated as sqr(dBx / dx)+sqr(dBy / dx), and pixels S1 and S2 can be 2D pixels or 3D pixels (e.g., as in FIG. 12). In all of these cases, the first angle ψ can be determined as a function of dBx / dx and the correction value D3, e.g., as a function of dBx / dx and √D3, e.g., as a function of the ratio of dBx / dx to √D3, and the second angle φ can be determined as a function of dBy / dx and the correction value D3, e.g., as a function of dBy / dx and √D3, e.g., as a function of the ratio of dBy / dx to √D3.

[0250] 7A-13, a magnetic sensor is also present at point C, and another correction factor D4 is determined based on the norm of one or more quadratic gradients selected from d²Bx / dx², d²B² / dx², and d²Bz / dx². Depending on which quadratic gradient is used, sensors S1, S2, and Sc may be 2D or 3D sensors. More specifically, in one example, D4 ​​is calculated as sqr(d²Bx / dx²) + sqr(d²B² / dx²) + sqr(d²B² / dx²), or as sqr(d²B² / dx²) + sqr(d²B² / dx²), or as sqr(d²B² / dx²), and pixels S1, S2, and Sc are 3D magnetic pixels. In another example, D3 is calculated as sqr(d2Bx / dx2)+sqr(d2By / dx2), and pixels S1, S2, Sc can be 2D or 3D pixels. In all of these cases, d2Bx / dx2 can be calculated as (Bx2-Bxc)-(Bxc-Bx1), d2By / dy2 can be calculated as (By2-Byc)-(Byc-By1), d2Bz / dx2 can be calculated as (Bz2-Bzc)-(Bzc-Bz1), the first angle ψ can be determined as a function of dBx / dx and correction value D4, e.g., as a function of dBx / dx and √D4, e.g., as a function of the ratio of dBx / dx to √D4, and the second angle can be determined as a function of dBy / dx and correction value D4, e.g., as a function of dBy / dx and √D4, e.g., as a function of the ratio of dBy / dx to √D4.

[0251] 8A and 8B, the inventors have also conceived the idea of ​​measuring the magnetic field at two other locations, referred to herein as S3 and S4, located on a Y-axis perpendicular to the X-axis and passing through a point C midway between S1 and S2. Sensors S3 and S4 are separated by a distance dy, which may be less than, equal to, or greater than the distance dx between S1 and S2. To the best of the inventors' knowledge, FIGS. 14A and 14B are not known in the art but are based on the inventors' imagination.

[0252] FIG. 14A shows a variation of FIG. 8A, and the bottom diagram gives a qualitative impression of the magnetic field vectors at five different locations when magnet 1401 is in its neutral position (ψ=0°, φ=0°): C, S1, S2, S3, S4.

[0253] Figure 14B shows a variation of Figure 8B, and the bottom diagram gives a qualitative impression of the magnetic field vectors at these five locations when point P of magnet 1401 is tilted by an angle φ = 30° in the YZ plane with respect to the Z axis. As shown in the figure, the component Bx at S3 and S4 depends on φ. The relationship between ΔBy34 and φ is similar to that shown in Figure 9B.

[0254] FIG. 15 shows an enlarged 3D perspective view of FIG. 14A.

[0255] The embodiments of Figures 16 to 21 and their variations are based on the idea of ​​determining the first angle ψ in the same way as described above (see, for example, Figures 7A to 14), i.e., based on ΔBx12 alone, or based on ΔBx12 and ΔBz12, or based on ΔBx12 and correction factors, such as D1 (related to temperature), D2 (related to the norm of the magnetic field component at point C), D3 (related to the norm of the first order gradient at point C), D4 (related to the norm of the second order gradient at point C).

[0256] FIG. 16 is a schematic diagram of a sensor arrangement that may be used in an embodiment of the present invention, e.g., the sensor device of FIG. 1, and shows a set of equations for determining the orientation of a magnet by a first angle ψ determined based on at least ΔBx12 (or dBx / dx) and by a second angle φ determined based on at least ΔBx34 (or dBx / dy).

[0257] The sensor arrangement 1603 of Figure 16 comprises two 2D magnetic pixels S1, S2 located on the X axis and each capable of measuring Bx and Bz, and two 1D magnetic pixels S3, S4 located on the Y axis and capable of measuring Bx.

[0258] For example, the same comments made in FIGS. 10A-10D regarding the location and orientation of the sensor relative to the semiconductor substrate, and the size and shape of the substrate, are also applicable here, mutatis mutandis.

[0259] In the example of FIG. 16, dx is equal to dy, but this is not absolutely necessary and the invention will work if dx is less than dy or greater than dy.

[0260] FIG. 17 shows a sensor arrangement 1703 which is a variation of FIG. 16, in which the first and second sensors S1, S2 each include a horizontal Hall element for measuring the Bz component and at least one vertical Hall element arranged to measure the Bx component.

[0261] FIG. 18 shows another variation of the sensor arrangement 1803 of FIG. 16, with four 2D magnetic pixels, each capable of measuring a Bx component and a By component.

[0262] The first angle ψ can be determined as a function of ΔBx12, or as a function of ΔBx12 and ΔBz12, for example, as a function of the ratio between ΔBx12 and ΔBz12, or as a function of ΔBx12 and ΔBz34, for example, as a function of the ratio between ΔBx12 and ΔBz34, and the second angle φ can be determined as a function of ΔBx34 and ΔBz12, for example, as a function of the ratio between ΔBx34 and ΔBz12, or as a function of ΔBx34 and ΔBz34, for example, as a function of the ratio between ΔBx34 and ΔBz34.

[0263] Figure 19 shows a sensor arrangement 1903 that is another variation of Figure 16, as may be used in embodiments of the present invention. This sensor arrangement comprises four 1D magnetic pixels and, optionally, a temperature sensor.

[0264] If no temperature sensor is present, this sensor arrangement may be used to determine the first angle ψ based on dBx / dx and the second angle φ based on dBx / dy without compensation.

[0265] If a temperature sensor is present, a temperature, e.g., the temperature of a magnet or the temperature of a semiconductor substrate, can be measured, and the correction value D1 can be determined as a predefined function of the measured temperature, and the first angle ψ can be calculated based on dBx / dx and based on the value D1, e.g., as a function of the ratio between dBx / dx and D1, e.g., as the arcsine function of said ratio, and the second angle φ can be calculated based on dBx / dy and based on the value D1, e.g., as a function of the ratio between dBx / dy and D1, e.g., as the arcsine function of said ratio.

[0266] Figure 20 shows another variation of sensor arrangement 2003 of Figure 16, which includes four 1D magnetic pixels and a 3D magnetic pixel therebetween, as may be used in embodiments of the present invention. Sensors S1-S4 may measure the Bx component. Sensor Sc may measure Bxc, Byc, and Bzc at point C. Sensor Sc may include a horizontal Hall element H3 and four vertical Hall elements V9-V12 (as shown), or may include a horizontal Hall element and only two vertical Hall elements (e.g., V9 and V11).

[0267] The magnetic field components measured by the 3D sensor can be used to determine the norm of the magnetic field at point C, which norm is used to correct the first gradient dBx / dx and the second gradient dBy / dx. The correction value D2 can be calculated, for example, as the sum of the squares of two or three of these magnetic field components, e.g., D2=sqr(Bxc)+sqr(Byc)+sqr(Bzc).

[0268] The first angle ψ may be determined as a function of dBx / dx with or without a correction value D2, e.g., as a function of dBx / dx and √D2, e.g., as a function of the ratio of dBx / dx to √D2, e.g., as the arcsine function of said ratio.

[0269] The second angle φ may be determined as a function of dBx / dy with or without correction value D2, e.g. as a function of dBx / dy and √D2, e.g. as a function of the ratio between dBx / dy and √D2, e.g. as the arcsine function of said ratio.

[0270] In variants, D2 is calculated as the sum of two of the three components measured at point C, for example as sqr(Bxc) + sqr(Bzc) (in which case V11 and V12 may be omitted), or as sqr(Bxc) + sqr(Byc) (in which case H3 may be omitted), or as sqr(Byc) + sqr(Bzc) (in which case V9 and 10 may be omitted).

[0271] In variants, the 3D magnetic pixel Sc has an IMC and two horizontal Hall elements for measuring Bxc and Bzc, or an IMC and two horizontal Hall elements for measuring Byc and Bzc, or an IMC and four horizontal Hall elements.

[0272] In a variant, sensors S1 and S2 each have an IMC and two or four horizontal Hall elements, and sensor Sc has an IMC with two or four horizontal Hall elements.

[0273] Figure 21 shows another variation of Figure 16, a sensor arrangement 2103, which comprises five 2D magnetic pixels and which may be used in embodiments of the present invention. Figure 19 may also be considered a further variation of Figure 18, which further comprises a 2D magnetic pixel at point C, which may measure Bxc and Byc.

[0274] In this embodiment, the correction coefficient D4 is determined based on the norm of one or more quadratic gradients selected from d2Bx / dx2, d2Bx / dy2, d2Bz / dx2, and d2Bz / dy2, where d2Bx / dx2=(Bx2-2*Bxc+Bx1), d2Bz / dx2=(Bz2-2*Bzc+Bz1), d2Bx / dy2=(Bx4-2*Bxc+Bx3), d2Bz / dy2=(Bz4-2*Bzc+Bz3).

[0275] In one example, D4 ​​is calculated as sqr(d²Bx / dx²)+sqr(d²Bx / dy²)+sqr(d²Bz / dx²)+sqr(d²Bz / dy²), the first angle ψ can be determined as a function of dBx / dx and the correction value D4, e.g., as a function of dBx / dx and √D4, e.g., as a function of the ratio of dBx / dx to √D4, and the second angle φ can be determined as a function of dBx / dy and the correction value D4, e.g., as a function of dBx / dy and √D4, e.g., as a function of the ratio of dBx / dy to √D4.

[0276] In a variant, D4 is calculated as the sum of the squares of only two or only three of these terms.

[0277] Referring back to Figures 8A and 8B, the inventors also conceived the idea of ​​measuring the magnetic field at two other locations, referred to herein as S5 and S6, located on an axis YY perpendicular to the X axis but offset by a distance dxx > 0 from point C midway between S1 and S2. The offset dxx may be less than, equal to, or greater than (dx / 2). Sensors S5 and S6 are separated by a distance dy, which may be less than, equal to, or greater than the distance dx between S1 and S2. To the best of the inventors' knowledge, Figures 22A and 22B are not known in the art but are based on the inventors' imagination.

[0278] Figure 22A shows a variation of Figure 8A, and the bottom diagram gives a qualitative impression of the magnetic field vectors at five different locations when magnet 2201 is in its neutral position (ψ=0°, φ=0°): C, S1, S2, S5, S6.

[0279] Figure 22B shows a variation of Figure 8B, and the bottom diagram gives a qualitative impression of the magnetic field vectors at these five locations when point P of magnet 2201 is tilted by an angle φ=30° in the YZ plane with respect to the Z axis. As can be seen, the components By and Bz at S5 and S6 appear to depend on φ, but it is impossible for the average person to predict what the relationship between ΔBz56 and φ will look like.

[0280] 23A shows an enlarged 3D perspective view of FIG. 22A without showing the magnetic field lines. A semiconductor substrate 2303 comprises four magnetic sensors located at S1, S2, S5, S6, and optionally a fifth magnetic sensor at point C.

[0281] For a cylindrical magnet 2301 having a diameter of 4.0 mm and a height of 4.0 mm, positioned at a distance "g" of 3.0 mm between the substrate and the magnet, with dx = 2.2 mm between two sensor locations S1 and S2, computer simulations were performed to determine how the magnetic field difference ΔBz56 = (Bz5 - Bz6), also referred to as dBz / dy, varies as a function of φ.

[0282] The results are shown in Figure 23C.

[0283] In some embodiments of the present invention, the slope ΔBz56 is corrected using the slope ΔBz12=(Bz1-Bz2) shown in FIG. 23B.

[0284] By storing these relationships in the sensor device and measuring the values ​​of Bz5 and Bz6, the angle φ can be determined. This relationship can be stored in any suitable manner, for example, by a mathematical formula or a look-up table in non-volatile memory. Such a solution (where φ is determined based only on Bz5 and Bz6) works well in environments where the temperature is relatively constant. Therefore, for certain applications, such a solution may be sufficiently accurate.

[0285] In applications where greater precision is required, such as industrial or robotic or automotive applications, some kind of correction to φ may be required. Again, several solutions are described, for example, by using the gradient ΔBz12=(Bz1-Bz2) obtained from S1 and S2, or by using a correction value D1 as a function of temperature, or by using a correction value D2 indicating the norm of the magnetic field measured at location C.

[0286] In the embodiments shown in Figures 24A to 27, the first angle ψ may be determined based on at least ΔBx12 = (Bx1 - Bx2), and optionally corrected using ΔBz12 = (Bz1 - Bz2), or using a correction value D1 as a function of temperature, or using a correction value D2 indicating the norm of the magnetic field measured at point C, and the second angle φ may be determined based on at least ΔBz56 = (Bz5 - Bz6), and optionally corrected using ΔBz12, or the correction value D1, or the correction value D2.

[0287] FIG. 24A is a schematic diagram of a sensor arrangement that can be used in an embodiment of the present invention, for example, the sensor device of FIG. 1, and shows a set of equations for determining the orientation of a magnet by a first angle ψ determined based on at least ΔBx12 and by a second angle φ determined based on at least ΔBz56.

[0288] The sensor arrangement 2403 of Figure 24A comprises two magnetic pixels S1, S2 located on the X axis, each capable of measuring at least Bx and preferably also Bz, and two 1D magnetic pixels S5, S6 located on an axis YY perpendicular to the X axis but offset from a point C located midway between S1 and S2.

[0289] In the example shown in Figure 24A, the value of dx is equal to dy and the value of dxx is equal to (dx / 2), but this is not necessary for the invention to function; the value of dy can be chosen to be different from the value dx, and the value of dxx can be chosen to be different from the values ​​(dx / 2) or (dy / 2), as also shown in Figures 24B to 24D.

[0290] For example, the same comments made in FIGS. 10A-10D regarding the location and orientation of the sensor relative to the semiconductor substrate, and the size and shape of the substrate, are also applicable here, mutatis mutandis.

[0291] 24B, 24C, and 24D show some variations of FIG. 24A, showing that the two IMC disks do not necessarily have to be positioned near the corners of the semiconductor substrate, and demonstrating that the orientation of the Hall plate can be rotated relative to the semiconductor substrate.

[0292] In the variations of Figures 24A to 24D, each of the sensors S1, S2 comprises a horizontal Hall element for measuring Bz (e.g., as shown in Figure 11 or Figure 17) and one or two vertical Hall elements arranged to measure Bx.

[0293] It should be noted that FIG. 24A is not drawn to scale, and in practice, all horizontal Hall elements H1-H6 may have the same size.

[0294] 24A , further comprising two horizontal Hall elements H7 and H8 located on an imaginary line YYY perpendicular to the X-axis and spaced from point C by a distance dxxx greater than zero. The distance dxxx may be less than, equal to, or greater than (dx / 2). Preferably, the values ​​of dxxx and dxx are equal to (dx / 2), and the value of dy is preferably equal to dx, in which case the four horizontal Hall elements H5, H6, H7, and H8 are located on an imaginary square with point C at its center, and the sensors S1 and S2 are located on the sides of the square, as shown.

[0295] The signal ΔBz12=(Bz1−Bz2) depends mainly on the first angle ψ.

[0296] While the signal ΔBz56 = (Bz5 - Bz6) depends on both ψ and φ, and the signal ΔBz78 = (Bz7 - Bz8) depends on both ψ and φ, the sum of the signals (ΔBz56 + ΔBz78) = (Bz5 - Bz6 + Bz7 - Bz8) is less dependent on ψ, and in one embodiment, this sum can be used as a correction value.

[0297] For example, it is also possible to use a weighted sum of the signals ΔBz56 and ΔBz78 according to the following formula: ΔBz5-8=(w1*ΔBz56)+(w2*ΔBz78), where w1, w2 are weighting coefficients, which may be predefined values ​​or may be predefined functions of the value of ψ.

[0298] Figure 26 shows another variation of Figure 24A, a sensor arrangement 2603, which may be used in embodiments of the present invention. This sensor arrangement is quite simple in that it only includes two vertical Hall elements V1 and V2 located on the X axis and two horizontal Hall elements H5 and H6 located on the YY axis. In the example shown, sensor V2 is also located on the YY axis, but as mentioned above, this is not absolutely necessary.

[0299] Optionally, the sensor arrangement 2603 further comprises a temperature sensor. In this case, the correction value D1 can be calculated as a function of the measured temperature, the first angle ψ can be determined based on ΔBx12 and the correction value D1, for example as a function of the ratio of ΔBx12 to D1, for example as an arcsine function of that ratio, and the second angle φ can be determined based on ΔBz56 and the correction value D1, or based on ΔBz56, D1 and ψ.

[0300] 26 (not shown), the sensor arrangement 2603 may further comprise a 3D magnetic pixel located at point C and capable of measuring (Bxc, Byc, Bzc), or a 2D magnetic pixel located at point C and capable of measuring (Bxc, Bzc). The correction value D2 may be calculated as the sum of the squares of these three values ​​Bxc, Byc, Bzc, or as the sum of the squares of the two values ​​Bxc, Bzc, the first angle ψ may be calculated as a function of ΔBx12 and D2, for example as a function of (ΔBx12 / √D2), and the second angle φ may be calculated as a function of ΔBz56 and D2, for example as a function of (ΔBz56 / √D2).

[0301] Figure 27 shows a sensor arrangement 2703 which is another variation of Figure 24A, but which can also be considered a variation of Figure 25, where S1 and S2 are replaced by 1D magnetic sensors, or a variation of Figure 26, where two horizontal Hall elements H7, H8 are added. This sensor arrangement optionally comprises a temperature sensor.

[0302] If the sensor arrangement 2703 includes a temperature sensor, the correction value D1 can be calculated as a function of the measured temperature, the first angle ψ can be determined based on ΔBx12 and the correction value D1, for example as a function of the ratio of ΔBx12 to D1, for example as an arcsine function of that ratio, and the second angle φ can be determined based on ΔBz56 and the correction value D1, or based on ΔBz56 and ΔBz78 and D1, or based on ΔBz56 and ΔBz78 and D1 and ψ, for example based on the sum or average or weighted average of D1 and ΔBz56 and ΔBz78.

[0303] In all the embodiments shown above, the first angle ψ is determined separately, and the second angle φ can be determined independently of or dependent on the first angle. In certain embodiments, the value so calculated can be considered as a first estimate of the orientation, and a correction can be performed as a post-processing step, for example, using a two-dimensional lookup table, optionally by interpolation. The values ​​of this lookup table can be determined during a calibration procedure and stored in the non-volatile memory of the sensor device.

[0304] In the embodiments shown above, only horizontal and vertical Hall elements are shown, but it is of course also possible to use other magnetic sensor structures, for example magnetoresistive (MR) sensors, if they are capable of measuring the same magnetic field components.

[0305] The simulations were performed for a cylindrical two-pole magnet having a diameter D of 4.0 mm and a height H of 4.0 mm, located at a distance "g" of 3.0 mm from a semiconductor substrate containing at least two sensor locations S1 and S2, and separated by a distance dx of 1.1 mm or 1.6 mm or 2.2 mm, although it will be appreciated that the present invention is not limited thereto and will also work for two-pole magnets having other dimensions and / or positioned at other distances "g" from the semiconductor substrate, as well as for semiconductor substrates in which the distance dx between S1 and S2 is less than 1.1 mm or greater than 2.2 mm (e.g., a value in the range of 1.0 mm to 3.0 mm).

[0306] In the sensor system according to the invention, the magnet is pivotable around a reference point "Pref" having a predefined location relative to the semiconductor substrate. This point is preferably located on the Z axis, which is perpendicular to the substrate and passes through point "C". As already mentioned above, the reference point "Pref" can be located on the positive Z axis, i.e., the magnet and the reference point "Pref" can be located on the same side of the substrate, or within the semiconductor substrate (as shown in FIG. 1), or on the negative Z axis, i.e., on the opposite side of the substrate from the magnet. However, the invention is not limited thereto; it also works when the (real or imaginary) reference point "Pref" about which the axis of the magnet is pivotable is located within or above the space defined by the magnet. In these cases, it has been found that the same formulas as those described above can also be used to calculate ψ and φ. Optionally, the sensor device may be further adapted to apply post-processing to these angles in a manner known per se in the art, for example by applying a first piece-wise linear correction to the angle ψ using a first set of predefined coefficients and a second piece-wise linear correction to the angle φ using a second set of predefined coefficients. These coefficients may be determined during a calibration step and may be stored in a non-volatile memory of the sensor device. In another embodiment, the post-processing step may be based on a two-dimensional lookup table by two-dimensional interpolation.

[0307] FIG. 28 shows an electrical block diagram of a sensor device 2802 such as may be used in the position sensor system 100 of FIG.

[0308] The sensor device 2802 comprises a semiconductor substrate having a plurality of magnetic sensor elements M1 to M4 (e.g., horizontal Hall elements, vertical Hall elements, magnetoresistive (MR) elements, etc.) that provide signals m1, m2, m3, m4, etc., a processing unit 2830 (e.g., comprising analog and / or digital components), and a non-volatile memory 2531 (e.g., EEPROM or flash).

[0309] The plurality of magnetic sensor elements M1, M2, etc. may be part of the above-described sensor arrangement, for example, as shown in Figures 10A to 13 or variations thereof, or as shown in Figures 16 to 21 or variations thereof, or as shown in Figures 24A to 27 or variations thereof.

[0310] The sensor device 2802 may further include a temperature sensor, which may be integrated into the semiconductor substrate containing the magnetic sensor element.

[0311] The sensor device 2802 further comprises biasing and readout circuitry (not shown). Biasing and readout of circuits comprising Hall sensors or MR elements is very well known in the art and therefore need not be described in further detail here.

[0312] The sensor device 2802 also includes a processing circuit 2830, which may be implemented on the same semiconductor substrate as that containing the magnetic sensor or on a second semiconductor substrate communicatively connected to the first semiconductor substrate. The processing circuit is configured to determine the first angle ψ or α and the second angle φ or β, for example, by using the mathematical formulas described above and / or shown in the figures and / or by using one or more look-up tables, optionally by interpolation. Optionally, a post-correction step is also applied.

[0313] The addition or subtraction of signals to determine magnetic field components (e.g., h2-h1 in FIG. 3A) and / or to determine magnetic field gradients (e.g., Bx2-Bx1 in FIG. 3A) can be performed in the analog domain before or after amplification, or in the digital domain.

[0314] The processing unit 2830 may comprise a digital processor, which may optionally comprise or be connected to non-volatile memory 2531 (e.g., NVRAM or EEPROM or Flash). This memory may comprise one or more constants, look-up tables, polynomial coefficients, etc. The digital processor 2530 may be, for example, an 8-bit processor or a 16-bit processor.

[0315] Although not explicitly shown, the sensor device 2802 may further comprise one or more components or subcircuits selected from the group consisting of an amplifier, a differential amplifier, an analog-to-digital converter (ADC), a multiplexer, etc. The ADC may have a resolution of at least 8 bits, or at least 10 bits, or at least 12 bits, or at least 14 bits, or at least 16 bits. [Explanation of symbols]

[0316] Pref reference point C: Midpoint between sensors S1 and S2 P: Center point of the magnet ψ the first angle (between the Z axis and the projection of the vector CP in the plane XZ) α (alternative) first angle (between the X axis and the projection of the vector CP in the plane XZ) φ the second angle (between the Z axis and the projection of the vector CP in the plane YZ) β (alternative) second angle (between the Y axis and the projection of the vector CP in the plane YZ) S1, S2, ... first and second sensors H1, H2, ... First and second horizontal Hall elements h1, h2, ... Signals obtained from H1, H2 V1, V2, ... First and second vertical Hall elements v1, v2, ... Signals obtained from V1, V2 g Distance between the substrate and the magnet (sometimes called the "air gap") Bx Magnetic field component oriented in the X direction By Y-direction oriented magnetic field component Bz Magnetic field component oriented in the Z direction dBy / dx Magnetic field gradient of By component along the X axis S1(Bx1, By1) The first magnetic sensor (pixel) capable of measuring the Bx and By components Reference modulo 100: -00 Position sensor system, e.g. joystick assembly -01 Magnet -02 Sensor device -03 Semiconductor substrate having sensor arrangement -30 Processing circuit -31 Non-volatile memory

Claims

1. A sensor device (102) for determining the orientation (α, β, φ, ψ) of a two-pole magnet (101), comprising: the sensor device comprises a semiconductor substrate (903, 1003, 1103, 1203, 1303) comprising or connected to at least first and second magnetic sensors (S1, S2) spaced apart in a first direction (X) by a predefined distance (dx), each of the first and second magnetic sensors (S1, S2) configured to measure a first magnetic field component (Bx1, Bx2) oriented in the first direction (X); In a first alternative, each of the first and second magnetic sensors (S1, S2) is further configured to measure a second magnetic field component (By1, By2) oriented in a second direction (Y) parallel to the semiconductor substrate and perpendicular to the first direction (X), Or in a second alternative, the semiconductor substrate further comprises third and fourth magnetic sensors (S3, S4) parallel to the semiconductor substrate and spaced apart by a second predefined distance (dy) in a second direction (Y) perpendicular to the first direction (X), the four magnetic sensors (S1, S2, S3, S4) being positioned on an imaginary ellipse, each of the third and fourth magnetic sensors (S3, S4) being configured to measure a first magnetic field component (Bx3, Bx4) oriented in the first direction (X); Or in a third alternative, the semiconductor substrate further comprises third and fourth magnetic sensors (S5, S6) parallel to the semiconductor substrate and spaced apart in a second direction (Y) perpendicular to the first direction (X), the third and fourth sensors (S5, S6) being located on an imaginary line YY that is offset (dxx) from the perpendicular bisector (Y) defined by the first and second sensors (S1, S2), and each of the third and fourth sensors (S5, S6) is capable of measuring a magnetic field component (Bz5, Bz6) oriented in a third direction perpendicular to the substrate; the magnet (101) is movable relative to the sensor device such that a center (P) of the magnet is rotatable about a reference point (Pref) having a predefined position relative to the semiconductor substrate; The sensor device further comprises a processing circuit (2830), the processing circuit (2830) comprising: i) determining a first magnetic field gradient (dBx / dx) of the first magnetic field component (Bx1, Bx2) along the first direction (X); ii) In the first alternative, the second magnetic field gradient (dBy / dx) of the second magnetic field component (By1, By2) along the first direction (X) is Alternatively, in the second alternative, a second magnetic field gradient (dBx / dy) along the second direction (Y) is calculated based on signals obtained from the third and fourth sensors (S3, S4): or in the third alternative, determining second magnetic field gradients (dBz / dy) of the magnetic field components (Bz5, Bz6) obtained from the third and fourth magnetic sensors (S5, S6) along the second direction (Y); iii) determining a first angle (α, ψ) based on the first magnetic field gradient (dBx / dx); iv) a sensor device configured to determine a second angle (β, φ) based on the second magnetic field gradient (dBy / dx, dBx / dy, dBz / dy).

2. the magnet (101) is magnetized in a direction substantially parallel to the semiconductor substrate when an imaginary line passing through the center (P) of the magnet and the reference point (Pref) is oriented substantially perpendicular to the semiconductor substrate; Alternatively, an orthogonal projection of the center (P) of the magnet on the semiconductor substrate substantially coincides with a point (C) located midway between the first magnetic sensor (S1) and the second magnetic sensor (S2); Alternatively, the magnet is magnetized in a direction substantially perpendicular to an imaginary line passing through the center (P) of the magnet and the reference point (Pref).

3. each of the first and second magnetic sensors (S1, S2) further configured to measure a magnetic field component (Bz1, Bz2) oriented in a third direction (Z) perpendicular to the semiconductor substrate; the processing circuitry v) determining a third magnetic field gradient (dBz / dx) of the magnetic field components (Bz1, Bz2) oriented in a third direction (Z) along the first direction (X); iii) determining the first angle (α, ψ) based on the first and third magnetic field gradients (dBx / dx, dBz / dx); iv) determining the second angle (β, φ) based on the second magnetic field gradient (dBy / dx, dBx / dy, dBz / dy) and the third magnetic field gradient (dBz / dx).

4. further comprising a temperature sensor for measuring a temperature; the processing circuitry determining a correction factor D1 as a predefined function of said measured temperature; iii) determining the first angle (α, ψ) based on the first magnetic field gradient (dBx / dx) and the correction coefficient D1; iv) determining the second angle (β, φ) based on the second magnetic field gradient (dBy / dx, dBx / dy, dBz / dy) and the correction factor D1.

5. the semiconductor substrate further comprises additional magnetic sensors (S3, Sc, Sc) located midway (C) between the first magnetic sensor (S1) and the second magnetic sensor (S2) and configured to determine two or more of a magnetic field component (Bxc) oriented in the first direction (X), a magnetic field component (Byc) oriented in the second direction (Y), and a magnetic field component (Bzc) oriented in the third direction (Z); the processing circuitry determining a correction factor D2 as the sum of the squares of two or more of the magnetic field components (Bxc, Byc, Bzc) measured by the additional magnetic sensors (S3, Sc, Sc); iii) determining the first angle (α, ψ) based on the first magnetic field gradient (dBx / dx) and the correction coefficient D2; iv) determining the second angle (β, φ) based on the second magnetic field gradient (dBy / dx, dBx / dy, dBz / dy) and the correction factor D2.

6. the magnetic sensor is configured as specified in the first or second alternative; the processing circuitry determining a correction factor D3a as the sum of the squares of the first magnetic field gradient (dBx / dx) and the second magnetic field gradient (dBy / dx, dBx / dy); iii) determining the first angle (α, ψ) based on the first magnetic field gradient (dBx / dx) and the correction coefficient D3a; iv) determining the second angle (β, φ) based on the second magnetic field gradient (dBy / dx, dBx / dy) and the correction factor D3a.

7. the magnetic sensor is configured as specified in the first alternative; each of the first and second magnetic sensors (S1, S2) is further configured to measure a third magnetic field component (Bz1, Bz2) oriented in a third direction (Z) perpendicular to the semiconductor substrate; the processing circuitry determining a third magnetic field gradient (dBz / dx) of the third magnetic field component (Bz1, Bz2) along the first direction (X); determining a correction factor D3b as the sum of the squares of two or three of the first, second and third magnetic field gradients (dBx / dx, dBy / dx, dBz / dx); iii) determining the first angle (α, ψ) based on the first magnetic field gradient (dBx / dx) and the correction coefficient D3b; iv) determining the second angle (β, φ) based on the second magnetic field gradient (dBy / dx) and the correction factor D3b.

8. the magnetic sensor is configured as specified in the first alternative; the semiconductor substrate further comprises a third magnetic sensor (S3) located midway (C) between the first magnetic sensor (S1) and the second magnetic sensor (S2) and configured to determine a magnetic field component (Bxc) oriented in the first direction (X) and a magnetic field component (Byc) oriented in the second direction (Y); the processing circuitry determining a second order gradient (dBx / dx) of the first magnetic field component (Bx) along the first direction (X) and a second order gradient (dBy / dx) of the second magnetic field component (By) along the first direction (X); Determine a correction factor D4a as the sum of the squares of these quadratic gradients, iii) determining the first angle (α, ψ) based on the first magnetic field gradient (dBx / dx) and the correction coefficient D4a; iv) determining the second angle (β, φ) based on the second magnetic field gradient (dBy / dx) and the correction factor D4a.

9. the magnetic sensor is configured as specified in the first alternative; each of the first and second magnetic sensors (S1, S2) further configured to measure a third magnetic field component (Bz1, Bz2) oriented in a third direction (Z) perpendicular to the substrate; the semiconductor substrate further comprises a third magnetic sensor (S3) located midway (C) between the first magnetic sensor (S1) and the second magnetic sensor (S2) and configured to determine a magnetic field component Bxc oriented in the first direction (X), a magnetic field component Byc oriented in the second direction (Y), and a magnetic field component Bzc oriented in the third direction (Z); the processing circuitry determining one or more of a second order gradient (d²Bx / dx²) of the first magnetic field component (Bx) along the first direction (X), a second order gradient (d²By / dx²) of the second magnetic field component (By) along the first direction (X), and a second order gradient (d²Bz / dx²) of the third magnetic field component (Bz) along the first direction (X); determining a correction factor D4b as the sum of the squares of two or three of the secondary gradients; iii) determining the first angle (α, ψ) based on the first magnetic field gradient (dBx / dx) and the correction coefficient D4b; iv) determining the second angle (β, φ) based on the second magnetic field gradient (dBy / dx) and the correction factor D4b.

10. the sensor device is configured to store a first relationship between the first magnetic field gradient and the first angle and / or a second relationship between the second magnetic field gradient and the second angle; the processing circuitry the first angle based on the first magnetic field gradient and the first relationship; and / or configured to determine the second angle based on the second magnetic field gradient and the second relationship; The sensor device of claim 1 , wherein the first and / or second relationship preferably comprises a mathematical formula or a look-up table.

11. A sensor system (100), comprising: - a magnetic sensor device (102) according to claim 1, - a two-pole magnet (101) magnetized or oriented as specified in claim 2.

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