Alignment mark, alignment mark pair, substrate, and method for manufacturing semiconductor device

Abstract

To provide a technique related to an alignment mark suitable for being arranged on a substrate on which line-and-space patterns are uniformly formed.SOLUTION: An alignment mark is formed by arranging a plurality of first components having a rectangular shape and a plurality of second components having a rectangular shape in a checkerboard state. Each first component is formed of a flat area, and each second component is formed of a line-and-space pattern having periodicity in a first direction. The length of the first components in the first direction is the odd-number multiple of a half pitch of the line-and-space pattern. The line-and-space pattern of each second component is line symmetrical with respect to a straight line passing through the center of the second component parallel to a second direction orthogonal to the first direction.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to an alignment mark, an alignment mark pair, a substrate, and a method for manufacturing a semiconductor device. [Background technology]

[0002] Patent Document 1 describes a mark having an X mark and a Y mark. The X mark is configured by a line and space (L / S) pattern extending in the X direction, and the Y mark is configured by an L / S pattern extending in the Y direction. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2023-044418 Summary of the Invention [Problem to be solved by the invention]

[0004] When an alignment mark is placed on a substrate on which a line and space pattern is uniformly formed, distortions may occur in the measurement signal obtained from the alignment mark depending on the relative positions of the line and space pattern and the alignment mark.

[0005] An object of the present invention is to provide a technology relating to alignment marks suitable for placement on a substrate on which a line and space pattern is uniformly formed. [Means for solving the problem]

[0006] One aspect of the present invention relates to an alignment mark having a plurality of first components each having a rectangular shape and a plurality of second components each having a rectangular shape arranged in a checkerboard pattern. Each first component may be formed of a flat region. Each second component may be formed of a line-and-space pattern having periodicity in a first direction. The length of the first component in the first direction may be an odd multiple of a half pitch of the line-and-space pattern. The line-and-space pattern of each second component may be axisymmetric with respect to a straight line passing through the center of the second component parallel to a second direction perpendicular to the first direction. [Effects of the Invention]

[0007] According to the present invention, a technique is provided for an alignment mark that is suitable for placement on a substrate on which a line and space pattern is uniformly formed. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram showing the arrangement of an imprint apparatus according to a first embodiment. [Figure 2] FIG. 1 is a diagram illustrating an example of the configuration of a detection device according to a first embodiment. [Figure 3] FIG. 2 is a diagram illustrating an example of the configuration of an alignment mark according to the first embodiment. [Figure 4] FIG. 2 is a diagram showing a first configuration example of an alignment mark according to the first embodiment. [Figure 5] FIG. 4 is a diagram showing a second configuration example of the alignment mark according to the first embodiment. [Figure 6] FIG. 10 is a diagram illustrating an example of the configuration of a detection device according to a second embodiment. [Figure 7] FIG. 10 is a diagram illustrating an example of the configuration of an alignment mark according to the second embodiment. [Figure 8] 1A to 1C are diagrams exemplarily showing a method for manufacturing an alignment mark or a semiconductor device. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0010] The alignment mark according to this embodiment can be used by a detection apparatus to detect misalignment between a substrate and an original. The detection apparatus can be incorporated into, for example, a lithography apparatus such as an imprint apparatus or an exposure apparatus, or an inspection apparatus such as an overlay inspection apparatus.

[0011] 1 shows an example of the configuration of an imprint apparatus 100 as a lithography apparatus according to the first embodiment. The imprint apparatus 100 is an apparatus that brings an imprint material arranged on a substrate into contact with a mold, and then applies curing energy to the imprint material to harden it, thereby forming a pattern on the substrate in which the pattern of the mold is transferred.

[0012] The imprint material is a curable composition (sometimes referred to as an uncured resin) that cures when curing energy is applied. Examples of curing energy include electromagnetic waves and heat. Electromagnetic waves can be, for example, light with a wavelength selected from the range of 10 nm to 1 mm, such as infrared light, visible light, and ultraviolet light. The curable composition can be a composition that cures when irradiated with light or when heated. Among these, photocurable compositions that cure when irradiated with light contain at least a polymerizable compound and a photopolymerization initiator and may further contain a non-polymerizable compound or a solvent, as needed. The non-polymerizable compound is at least one selected from the group consisting of a sensitizer, a hydrogen donor, an internal mold release agent, a surfactant, an antioxidant, and a polymer component. The imprint material can be deposited on a substrate in the form of droplets, or in the form of islands or a film formed by connecting multiple droplets, using an imprint material supplying device (not shown). The viscosity of the imprint material (at 25°C) may be, for example, 1 mPa·s or more and 100 mPa·s or less. Materials that can be used for the substrate include, for example, glass, ceramics, metal, semiconductor, and resin. If necessary, a member made of a material different from the substrate may be provided on the surface of the substrate. The substrate may be, for example, a silicon wafer, a compound semiconductor wafer, or quartz glass.

[0013] In this specification and the drawings, directions are indicated in an xyz coordinate system with the horizontal plane as the xy plane. The substrate W is placed on the substrate stage 162 so that its surface is parallel to the horizontal plane (xy plane). Therefore, hereinafter, the directions that are perpendicular to each other in a plane along the surface of the substrate W are referred to as the x-axis and y-axis, and the direction perpendicular to the x-axis and y-axis is referred to as the z-axis. Furthermore, hereinafter, the directions that are parallel to the x-axis, y-axis, and z-axis in the xyz coordinate system are referred to as the x-direction, y-direction, and z-direction, respectively, and the directions of rotation around the x-axis, y-axis, and z-axis are referred to as the θx-direction, θy-direction, and θz-direction, respectively.

[0014] In one example, the imprint apparatus 100 cures the imprint material by irradiating it with UV light (ultraviolet light) as the curing energy. However, the imprint apparatus 100 may be an imprint apparatus that cures the imprint material by irradiating it with light in another wavelength range, or an imprint apparatus that cures the imprint material by other energy (for example, heat).

[0015] The imprint apparatus 100 can be configured to repeat the imprint process to form a pattern in multiple shot areas on the substrate W. The imprint process is a process of forming a pattern in one shot area on the substrate W by bringing the pattern of the mold M into contact with the imprint material R and curing the imprint material R.

[0016] The imprint apparatus 100 may include a curing unit 120, a mold operation mechanism 130, a mold shape correction mechanism 140, a substrate drive unit 160, a detection device 170, a supply unit 190, an observation scope 193, and a control unit 180. Although not shown, the imprint apparatus 100 may also include a bridge surface plate that supports the mold operation mechanism 130, a base surface plate that supports the substrate drive unit 160, and the like.

[0017] The curing unit 120 cures the imprint material R on the substrate W by irradiating it with ultraviolet light via the mold M. The imprint material R may be an ultraviolet-curable resin. The curing unit 120 may include, for example, a light source 121, an optical system 122, and a half mirror 123. The light source 121 may include, for example, a light source such as a mercury lamp that generates ultraviolet light (e.g., i-line and g-line) and an elliptical mirror that focuses the light emitted by the light source. The optical system 122 is composed of a lens, an aperture, and the like for irradiating the imprint material in the shot area with light for curing the imprint material R. The light that has passed through these optical systems is irradiated onto the imprint material R by the half mirror 123. The aperture is used for angle of view control and peripheral shading control. The angle of view control makes it possible to illuminate only the target shot area, and peripheral shading control makes it possible to limit the light from being irradiated beyond the shot area of ​​the substrate. The optical system 122 may include an optical integrator to uniformly illuminate the mold M. The light whose range is defined by the aperture is incident on the imprint material R on the substrate via the optical system 122 and the mold M. The mold M is, for example, a mold on which a concave-convex pattern such as a device circuit pattern is formed in a three-dimensional shape. The material of the mold M is quartz or the like that is capable of transmitting ultraviolet light.

[0018] The mold operation mechanism 130 may include, for example, a mold chuck 131 that holds the mold M, a mold driving mechanism 132 that drives the mold M by driving the mold chuck 131, and a mold base 133 that supports the mold driving mechanism 132. The mold driving mechanism 132 may include a positioning mechanism that controls the position of the mold M with respect to six axes, and a mechanism that brings the mold M into contact with the imprint material R on the substrate W and separates the mold M from the hardened imprint material R. Here, the six axes are the X, Y, Z, θx, θy, and θz directions.

[0019] The mold shape correction mechanism 140 can be mounted on the mold chuck 131. The mold shape correction mechanism 140 can correct the shape of the mold M by applying pressure to the mold from the outer circumferential direction using, for example, a cylinder operated by air or oil fluid. Alternatively, the mold shape correction mechanism 140 can include a temperature control unit that controls the temperature of the mold M and correct the shape of the mold M by controlling the temperature of the mold M. The substrate W can be deformed (typically expanded or contracted) by undergoing a process such as heat treatment. The mold shape correction mechanism 140 can correct the shape of the mold M in accordance with the deformation of the substrate W so that the overlay error between the pattern of the mold M and an existing pattern on the substrate W falls within an allowable range.

[0020] The substrate driving unit 160 may include a substrate chuck 161, a substrate stage 162, a reference mark table 191, and a stage driving mechanism (not shown). The substrate chuck 161 holds the substrate W. The substrate stage 162 supports the substrate chuck 161 and moves the substrate W by driving the substrate chuck 161. A reference mark 192 is disposed on the reference mark table 191. The stage driving mechanism may include a positioning mechanism that controls the position of the substrate W by controlling the position of the substrate stage 162 along the six axes described above.

[0021] The detection device 170 can be used, for example, to detect the relative position (misalignment) between the mold M and a shot area on the substrate W. The detection device 170 can be configured, for example, to illuminate an alignment mark 182 formed on the mold M and an alignment mark 183 formed on the substrate W, and detect an image of interference fringes (also called Moiré fringes) formed by light diffracted by the two marks. The detection device 170 or the control unit 180 measures the relative position based on the detected image.

[0022] The supply unit 190 supplies the imprint material onto the substrate W. The supply unit 190 can include a tank that stores the imprint material, a nozzle that ejects the imprint material supplied from the tank through a supply path onto the substrate, a valve provided in the supply path, and a supply amount control unit.

[0023] The observation scope 193 is a scope for observing the shot area, and has an imaging element for capturing an image of the shot area. The observation scope 193 is used to check the state of contact between the mold M and the imprint material R, and the progress of filling the concave and convex portions of the pattern of the mold M with the imprint material R.

[0024] The following describes the imprint processing performed by the imprint apparatus 100. The control unit 180 causes a substrate transport device (not shown) to transport the substrate W onto the substrate chuck 161, and fixes the substrate W to the substrate chuck 161. Next, the control unit 180 moves the substrate stage 162 so that the shot area is positioned directly below the mold M.

[0025] Next, the control unit 180 drives the mold driving mechanism 132 to bring the mold M into contact with the imprint material R on the substrate W (contact step). When the mold M comes into contact with the imprint material R, the imprint material R flows along the pattern surface of the mold M and fills the space defined by the substrate W and the mold M. Furthermore, while the mold M and the imprint material R are in contact with each other, the detection device 170 detects diffracted light from an alignment mark 182 arranged on the mold M and an alignment mark 183 arranged on the substrate W. Based on the detection results, the control unit 180 performs alignment between the mold M and the substrate W by driving the substrate W, and correction by a correction mechanism for the mold M. In this way, the imprint material R flows (fills) onto the pattern surface of the mold M, alignment between the mold M and the substrate W, and correction of the mold M are fully performed. Thereafter, the curing unit 120 irradiates ultraviolet light from the back surface (top surface) of the mold M, and the imprint material R is cured by the ultraviolet light that has passed through the mold M (curing step). Subsequently, the control unit 180 drives the mold driving mechanism 132 again to separate the mold M from the hardened imprint material R (mold releasing step). As a result, the concavo-convex pattern of the mold M is transferred to the imprint material R on the substrate W.

[0026] Fig. 2(a) is a perspective view showing the configuration of detection device 170 of the first embodiment, and Fig. 2(b) is a yz cross-sectional view of detection device 170 of Fig. 2(a). In Fig. 1, light emitted from detection device 170 is changed in direction by mirror 179 and then illuminates alignment marks 182 and 183, but in Figs. 2(a) and 2(b), mirror 179 is omitted to simplify the illustration.

[0027] The detection device 170 has an illumination optical system IL that illuminates an alignment mark 182 (first mark) arranged on the mold M and an alignment mark 183 (second mark) arranged on the substrate W. The illumination optical system IL is configured to perform dipole illumination using light having two poles in its pupil plane. For example, the illumination optical system IL may include a diffractive optical element 171, a lens 173, a diaphragm 174 for achieving dipole illumination, two polarizing elements 185, and a beam splitter 175. The detection optical system DL may include a lens 176, the beam splitter 175, a lens 177, and an image sensor 178.

[0028] Light from the light source 200 illuminates the diffractive optical element 171, thereby generating diffracted light. The diffracted light generated by the diffractive optical element 171 passes through a lens 173, an aperture 174, two polarizing elements 185, a beam splitter 175, and a lens 176, and provides dipole illumination to an alignment mark 182 on the mold M and an alignment mark 183 on the substrate W. The two polarizing elements 185 are positioned so that the polarization directions of the light from each of the two poles incident on the substrate are orthogonal. The aperture 174 may be positioned at or near the pupil plane of the illumination optical system IL, and the two polarizing elements 185 may be positioned on the light source side with respect to the pupil plane.

[0029] The alignment marks 182 and 183 are composed of diffraction gratings with different pitches in the measurement direction. The alignment mark 183 on the substrate W is composed of a checkerboard-shaped grating pattern with a grating pitch in the y direction and a grating pitch in the x direction. Light diffracted by the two marks generates interference fringes (Moiré fringes) with a light intensity distribution in the y direction, which is the measurement direction. If the relative position between the mold M and the substrate W changes in the y direction, the phase of the interference fringes changes accordingly. The interference fringes are imaged on the light-receiving surface of the image sensor 178 by an imaging optical system composed of a lens 176, a beam splitter 175, and a lens 177, and the image information is sent to the control unit 180. The control unit 180 calculates the relative position (deviation) between the mold M and the substrate W based on the phase information of the interference fringes, and adjusts the alignment between the mold M and the substrate W by driving the mold driving mechanism 132 and the substrate stage 162 based on the calculation result.

[0030] In this example, the illumination optical system IL in the detection device 170 is configured to perform dipole illumination using light with two poles at its pupil plane, and the polarization directions of the light from each of the two poles incident on the substrate are orthogonal. Two polarizing elements 185 cause the polarization directions of the two beams to be orthogonal at the substrate surface 184. In this example, the two polarizing elements 185 are arranged on the light source side of the pupil plane, but this arrangement is not limited to this, as long as the polarization positions are orthogonal at the substrate surface. For example, two polarizing elements 185 may be arranged on the image plane side of the aperture 174 used to achieve dipole illumination. Furthermore, while this example uses an optical system that illuminates a diffractive optical element, the use of a diffractive optical element is not necessary as long as the optical system generates two-beam interference. Furthermore, although dipole illumination is used in this example, dipole illumination is not necessarily required; monopole illumination could also be used. However, in this case, the defocus changes due to changes in the device environment, such as changes in atmospheric pressure. A change in defocus can cause the image to shift due to illumination asymmetry, which can degrade performance.

[0031] The alignment mark 183 provided on the substrate will now be described. FIG. 3 schematically shows the configuration of the alignment mark 183 provided on the substrate in the first embodiment. FIGS. 4 and 5 are enlarged views of a portion of FIG. 3, with FIG. 4 showing a first configuration example and FIG. 5 showing a second configuration example. The y direction in FIGS. 3 to 5 is the measurement direction. In this example, the y direction is the first direction and the x direction is the second direction. However, this is merely for convenience of explanation, and the y direction and the x direction may be interchanged.

[0032] 3, 4, and 5, the line and space pattern LAS is composed of a plurality of lines L extending along the x direction and a plurality of spaces S, each sandwiched between adjacent lines L. The line and space pattern LAS can be formed by a multiple patterning process such as SAQP (Self Aligned Quadrable Patterning). The half pitch HP of the line and space pattern LAS can be, for example, 20 nm or less. Although there is no theoretical limit to the minimum dimension of the half pitch HP of the line and space pattern LAS, the half pitch HP of the line and space pattern LAS can be, for example, 1 nm or more.

[0033] The alignment mark 183 may be configured by arranging a plurality of first components CP1 each having a rectangular shape and a plurality of second components CP2 each having a rectangular shape in a checkerboard pattern. The alignment mark 183 may also be understood as an alignment mark structure.

[0034] Each first component CP1 may be formed of a flat region. Each second component CP2 may be formed of a line-and-space pattern LAS having periodicity in the y direction (first direction), and the line-and-space pattern LAS may be formed of a plurality of lines L and a plurality of spaces S arranged alternately. The length of the first component CP1 in the y direction (first direction) may be an odd multiple of the half pitch HP of the line-and-space pattern LAS. In other words, the length of the first component CP1 in the y direction (first direction) may be (2n-1) times (n is a natural number) the half pitch HP of the line-and-space pattern LAS, i.e., (2n-1)HP. The line-and-space pattern LAS of each second component CP2 is symmetrical with respect to an axis SA, which is a straight line passing through the center of the second component CP2 parallel to the x direction (second direction) perpendicular to the y direction (first direction). With this configuration, the symmetry of the line-and-space pattern LAS constituting the second component CP2 of the alignment mark 183 enables the detection device 170 to obtain a good image. On the other hand, if the line-and-space pattern LAS of the second component CP2 does not have symmetry with respect to the axis SA, a false signal component may be added to the image of the alignment mark 183 detected by the detection device 170. Therefore, for example, the waveform of the measurement signal related to the measurement direction obtained from the image may be distorted, and the detection accuracy may decrease.

[0035] The length of the first component CP1 and the second component CP in the x direction (second direction) may be an odd multiple of the half pitch HP. In other words, the length of the first component CP1 and the second component CP in the x direction (second direction) may be (2m-1) times (m is a natural number) the half pitch HP, that is, (2m-1)HP.

[0036] In one aspect, it can be understood that a unit pattern constituting the alignment mark 183 is constituted by a first component CP1 and a second component CP2 adjacent in the y direction (first direction). The unit pattern forms one period (pitch) in the alignment mark. Note that this period differs from the period of the line and space pattern LAS. The length of the unit pattern in the y direction may be 2 ((2n-1)+1) times the half pitch HP of the line and space pattern LAS, i.e., 4nHP. The length of the second component CP2 in the y direction (first direction) may be (2n+1) times the half pitch HP of the line and space pattern LAS, i.e., (2n+1)HP. In the y direction (first direction), the difference between the length of the first component CP1 and the length of the second component CP2 is equal to twice the half pitch HP of the line and space pattern LAS.

[0037] In the first configuration example shown in Fig. 4, the second component CP2 has a space S that contacts the first component CP1 adjacent to the second component CP2 in the positive direction (+y direction) of the y direction (first direction). Also, in the first configuration example shown in Fig. 4, the second component CP2 has a space S that contacts the first component CP1 adjacent to the second component CP2 in the negative direction (-y direction) of the y direction.

[0038] 5, the second component CP2 has a line L that contacts the first component CP1 adjacent to the second component CP2 in the positive direction (+y direction) of the y direction (first direction). Also, in the second configuration example shown in FIG. 5, the second component CP2 has a line L that contacts the first component CP1 adjacent to the second component CP2 in the negative direction (-y direction) of the y direction.

[0039] A specific application example is described below. Here, we consider an alignment mark for aligning a substrate and a mold in an imprinting apparatus. We also assume that a line-and-space pattern with a half pitch HP of 20 nm is formed on the substrate by a multiple patterning process. The period (pitch) P1 of the alignment mark formed on the mold in the measurement direction is P1 = 4nHP = 4 × 25 × 20 nm = 2.0 μm, where n = 25. Meanwhile, the period (pitch) P2 of the alignment mark formed on the substrate in the measurement direction is P2 = 4nHP = 4 × 23 × 20 nm = 1.84 μm, where n = 23. The period MP of the moiré fringes is expressed by the following equation (1), and in this application example, M = 11.5 μm.

[0040]

number

[0041] The second embodiment will be described below. Matters not mentioned in the second embodiment may follow the first embodiment. In the second embodiment, a configuration for performing measurements in both the x and y directions will be described as an example.

[0042] FIG. 6 is a perspective view showing the configuration of a detection device 170 according to the second embodiment. FIG. 6 also shows a schematic diagram of an alignment mark 183 provided on a substrate according to the second embodiment. The detection device 170 is configured to measure the relative positions of the substrate alignment mark and the mold alignment mark in both the x and y directions. The pupil plane 187 in FIG. 6 is a simplified representation of the lens 173, aperture 174, lens 176, and polarizing element 185 shown in FIG. 2(a). The diffractive optical element 171 includes a first region A' that forms illumination light for illuminating a first portion A of the substrate surface 184 and a second region B' that forms illumination light for illuminating a second portion B of the alignment mark 183, which is different from the first portion A. The first region A' of the diffractive optical element 171 diffracts light in the x direction at the surface of the diffractive optical element 171. The light diffracted in the x direction passes through a polarizing element 185 located on the pupil plane 187. Light polarized in the x direction passes through the two poles aligned in the x direction, illuminating a first portion A of the substrate surface 184. By evaluating the interference fringes of the first portion A of the substrate surface 184, the amount of relative positional deviation between the mold M and the substrate W in the y direction can be calculated.

[0043] Similarly, the second region B' of the diffractive optical element 171 diffracts light in the y direction at the surface of the diffractive optical element 171. The light diffracted in the y direction passes through the polarizing element 185 on the pupil plane 187. Light polarized in the y direction passes through the two poles aligned in the Y direction, illuminating the second portion B of the substrate surface 184. By evaluating the interference fringes of the second portion B of the substrate surface 184, the amount of relative positional deviation between the mold M and the substrate W in the x direction can be calculated.

[0044] In this way, it is possible to simultaneously measure the positional deviation in the x direction (second direction) and the positional deviation in the y direction (first direction).

[0045] FIG. 7 shows a schematic diagram of an alignment mark 183 provided on a substrate in the second embodiment. A second portion B of a substrate surface 184 is a first alignment mark corresponding to the y-direction alignment mark 183 in the first embodiment. The alignment mark in the first portion A is a second alignment mark having a structure in which the portion of the alignment mark in the second portion B other than the line-and-space pattern is rotated by 90 degrees. The measurement direction and non-measurement direction of the first portion A and the second portion B differ by 90 degrees. The first alignment mark and the second alignment mark form an alignment mark pair.

[0046] The first alignment mark 183-1 may be configured by arranging a plurality of first rectangular components CP1 and a plurality of second rectangular components CP2 in a checkerboard pattern, and may be understood as a first alignment mark structure.

[0047] Each first component CP1 may be composed of a flat region. Each second component CP2 may be composed of a first line-and-space pattern having periodicity in the y direction (first direction), with the first line-and-space pattern being composed of a plurality of lines and a plurality of spaces. The length of each first component CP1 in the y direction (first direction) is an odd multiple of the half pitch HP of the first line-and-space pattern. In other words, the length of each first component CP1 in the y direction (first direction) is (2n-1) times (n is a natural number) the half pitch HP of the first line-and-space pattern, i.e., (2n-1)HP. The line-and-space pattern of each second component CP2 is symmetrical about an axis SA, which is a straight line passing through the center of each second component CP2 parallel to the x direction (second direction) perpendicular to the y direction (first direction).

[0048] The length of the first component CP1 and the second component CP in the x direction (second direction) may be an odd multiple of the half pitch HP of the first line-and-space pattern. In other words, the length of the first component CP1 and the second component CP in the x direction (second direction) may be (2m-1) times (m is a natural number) the half pitch HP of the first line-and-space pattern, i.e., (2m-1)HP.

[0049] The second alignment mark 183-2 may be configured by a checkerboard arrangement of a plurality of rectangular third components CP3 and a plurality of rectangular fourth components CP4, and may be understood as a second alignment mark structure.

[0050] Each third component CP3 may be composed of a flat region. Each fourth component CP4 may be composed of a second line-and-space pattern having periodicity in the y direction (first direction), and the second line-and-space pattern may be composed of a plurality of lines and a plurality of spaces. The length of the third component CP3 in the y direction (first direction) is an odd multiple of the half pitch HP of the second line-and-space pattern. The line-and-space pattern of each fourth component CP4 is symmetrical with respect to a straight line passing through the center of the fourth component CP4 parallel to the x direction (second direction).

[0051] The half pitch HP of the first line and space pattern in first alignment mark 183-1 in the y direction (first direction) is equal to the half pitch of the second line and space pattern in second alignment mark 183-2 in the y direction.

[0052] Hereinafter, a semiconductor device manufacturing method including the alignment mark manufacturing method of the first and second embodiments will be described by way of example with reference to Fig. 8. Note that the cross-sectional views shown in Fig. 8 correspond to the A-A' cross sections in Figs. 5 and 6. In step ST1, a line and space pattern 802 is formed on a substrate 801. Step ST1 may include a multiple patterning process, for example, SAQP (Self Aligned Quadrable Patterning).

[0053] In steps ST2 and ST3, a resist pattern 804 in which a plurality of first components CP1 each having a rectangular shape and a plurality of second components CP2 each having a rectangular shape are arranged in a checkerboard pattern is formed on the line and space pattern 802. First, in step ST2, a photoresist film 803 is applied so as to cover the substrate 801 and the line and space pattern 802. Next, in step ST3, the photoresist film 803 is exposed using a predetermined original and exposure device, and then developed, thereby forming the resist pattern 804.

[0054] Next, in step ST4, the resist pattern 804 is used as an etching mask to etch the line and space pattern 802, thereby forming alignment marks 805. Thereafter, in step ST5, the resist pattern 804 is removed.

[0055] Furthermore, a semiconductor device can be formed by subjecting the substrate obtained through the above steps ST1 to ST5 to multiple processes. The multiple processes can include, for example, a film formation process, a lithography process, an etching process, a planarization process, a dicing process, a bonding process, a packaging process, etc. Furthermore, multiple processes can be performed before step ST1. Such multiple processes can include, for example, a lithography process, an oxidation process, a film formation process, a silicidation process, a single crystallization process, a doping process, an etching process, etc.

[0056] The present specification and drawings include the following disclosure. (Item 1) An alignment mark in which a plurality of first components each having a rectangular shape and a plurality of second components each having a rectangular shape are arranged in a checkerboard pattern, Each first component comprises a flat region; Each second component is formed of a line and space pattern having periodicity in a first direction, a length of the first component in the first direction is an odd multiple of a half pitch of the line and space pattern; the line and space pattern of each second component is symmetrical with respect to a straight line passing through the center of the second component in parallel with a second direction perpendicular to the first direction; An alignment mark characterized by: (Item 2) the lengths of the first and second components in the second direction are odd multiples of the half pitch; 2. The alignment mark according to item 1, characterized in that: (Item 3) the second component includes a space contacting the first component adjacent to the second component in the positive direction of the first direction, and a space contacting the first component adjacent to the second component in the negative direction of the first direction, 2. The alignment mark according to item 1, characterized in that: (Item 4) the second component includes a line contacting the first component adjacent to the second component in the positive direction of the first direction, and a line contacting the first component adjacent to the second component in the negative direction of the first direction, 2. The alignment mark according to item 1, characterized in that: (Item 5) The half pitch is 20 nm or less. 5. The alignment mark according to any one of items 1 to 4, wherein: (Item 6) In the first direction, a difference between a length of the first component and a length of the second component is equal to twice the half pitch. 6. The alignment mark according to any one of items 1 to 5, wherein: (Item 7) 7. A substrate comprising the alignment mark according to any one of items 1 to 6. (Item 8) An alignment mark pair including a first alignment mark for measuring a position in a first direction and a second alignment mark for measuring a position in a second direction perpendicular to the first direction, The first alignment mark comprises: an alignment mark in which a plurality of first components each having a rectangular shape and a plurality of second components each having a rectangular shape are arranged in a checkerboard pattern; Each first component comprises a flat region; each second component is formed of a first line and space pattern having periodicity in the first direction; a length of the first component in the first direction is an odd multiple of a half pitch of the first line and space pattern; the first line-and-space pattern of each second component is symmetrical with respect to a line passing through a center of the second component in parallel with the second direction; The second alignment mark comprises: an alignment mark in which a plurality of third components each having a rectangular shape and a plurality of fourth components each having a rectangular shape are arranged in a checkerboard pattern; Each third component consists of a flat area, each fourth component is formed of a second line and space pattern having periodicity in the first direction; a length of the third component in the first direction is an odd multiple of a half pitch of the second line and space pattern; the second line and space pattern of each fourth component is symmetrical with respect to a line passing through the center of the fourth component in parallel with the second direction; 1. A pair of alignment marks comprising: (Item 9) The half pitch is 20 nm or less. 9. The alignment mark pair according to item 8, (Item 10) a half pitch of the first line and space pattern in the first direction is equal to a half pitch of the second line and space pattern in the first direction; 10. The alignment mark pair according to item 8 or 9, (Item 11) 11. A substrate comprising the alignment mark pair according to any one of items 8 to 10. (Item 12) 1. A method for manufacturing a semiconductor device, comprising: forming a line and space pattern on a substrate; forming a resist pattern on the line and space pattern, in which a plurality of first components having a rectangular shape and a plurality of second components having a rectangular shape are arranged in a checkerboard pattern; forming an alignment mark by etching the line and space pattern using the resist pattern as an etching mask; 1. A method for manufacturing a semiconductor device, comprising: (Item 13) The step of forming the line and space pattern includes a multiple patterning process. 13. The method for manufacturing a semiconductor device according to item 12. (Item 14) The step of forming the line and space pattern includes SAQP (Self Aligned Quadrable Patterning), 13. The method for manufacturing a semiconductor device according to item 12. (Item 15) the line and space pattern has periodicity in a first direction; Each first component is composed of a flat area, each second component is formed from a portion of the line and space pattern; a length of the first component in the first direction is an odd multiple of a half pitch of the line and space pattern; Each second component is symmetrical with respect to a line that passes through the center of the second component in parallel with a second direction perpendicular to the first direction. 15. The method for manufacturing a semiconductor device according to any one of items 12 to 14. (Item 16) a length of the first component and the second component in a second direction perpendicular to the first direction is an odd multiple of the half pitch; 16. The method for manufacturing a semiconductor device according to item 15. (Item 17) the second component includes a space contacting the first component adjacent to the second component in the positive direction of the first direction, and a space contacting the first component adjacent to the second component in the negative direction of the first direction, 17. The method for manufacturing a semiconductor device according to item 15 or 16, (Item 18) the second component includes a line contacting the first component adjacent to the second component in the positive direction of the first direction, and a line contacting the first component adjacent to the second component in the negative direction of the first direction, 17. The method for manufacturing a semiconductor device according to item 15 or 16, (Item 19) The half pitch is 20 nm or less. 17. The method for manufacturing a semiconductor device according to item 15 or 16, (Item 20) In the first direction, a difference between a length of the first component and a length of the second component is equal to twice the half pitch. 20. The method for manufacturing a semiconductor device according to any one of items 15 to 19,

[0057] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0058] LAS: Line and space pattern, HP: Half pitch, CP1: First component, CP2: Second component, L: Line, S: Space, SA: Axis, 183: Alignment mark

Claims

1. An alignment mark in which a plurality of first components each having a rectangular shape and a plurality of second components each having a rectangular shape are arranged in a checkerboard pattern, Each first component comprises a flat region; Each second component is formed of a line and space pattern having periodicity in a first direction, a length of the first component in the first direction is an odd multiple of a half pitch of the line and space pattern; the line and space pattern of each second component is symmetrical with respect to a straight line passing through the center of the second component in parallel with a second direction perpendicular to the first direction; An alignment mark characterized by:

2. a length of the first component and the second component in the second direction is an odd multiple of the half pitch; 2. The alignment mark according to claim 1, wherein the alignment mark is a reflective surface.

3. the second component includes a space contacting the first component adjacent to the second component in the positive direction of the first direction, and a space contacting the first component adjacent to the second component in the negative direction of the first direction, 2. The alignment mark according to claim 1, wherein the alignment mark is a reflective surface.

4. the second component includes a line contacting the first component adjacent to the second component in the positive direction of the first direction, and a line contacting the first component adjacent to the second component in the negative direction of the first direction, 2. The alignment mark according to claim 1, wherein the alignment mark is a reflective surface.

5. The half pitch is 20 nm or less.

2. The alignment mark according to claim 1, wherein the alignment mark is a reflective surface.

6. In the first direction, a difference between a length of the first component and a length of the second component is equal to twice the half pitch.

2. The alignment mark according to claim 1, wherein the alignment mark is a reflective surface.

7. A substrate comprising the alignment mark according to any one of claims 1 to 6.

8. an alignment mark pair including a first alignment mark for measuring a position in a first direction and a second alignment mark for measuring a position in a second direction perpendicular to the first direction, The first alignment mark comprises: an alignment mark in which a plurality of first components each having a rectangular shape and a plurality of second components each having a rectangular shape are arranged in a checkerboard pattern; Each first component comprises a flat region; each second component is formed of a first line and space pattern having periodicity in the first direction; a length of the first component in the first direction is an odd multiple of a half pitch of the first line and space pattern; the first line-and-space pattern of each second component is symmetrical with respect to a line passing through a center of the second component in parallel with the second direction; The second alignment mark comprises: an alignment mark in which a plurality of third components each having a rectangular shape and a plurality of fourth components each having a rectangular shape are arranged in a checkerboard pattern; Each third component comprises a flat region; each fourth component is formed of a second line-and-space pattern having periodicity in the first direction; a length of the third component in the first direction is an odd multiple of a half pitch of the second line and space pattern; the second line and space pattern of each fourth component is symmetrical with respect to a line passing through the center of the fourth component in parallel with the second direction; 1. A pair of alignment marks comprising:

9. The half pitch is 20 nm or less.

9. The alignment mark pair according to claim 8.

10. a half pitch of the first line and space pattern in the first direction is equal to a half pitch of the second line and space pattern in the first direction; 9. The alignment mark pair according to claim 8.

11. A substrate comprising the alignment mark pair according to any one of claims 8 to 10.

12. 1. A method for manufacturing a semiconductor device, comprising: forming a line and space pattern on a substrate; forming a resist pattern on the line and space pattern, in which a plurality of first components each having a rectangular shape and a plurality of second components each having a rectangular shape are arranged in a checkerboard pattern; forming an alignment mark by etching the line and space pattern using the resist pattern as an etching mask; 1. A method for manufacturing a semiconductor device, comprising:

13. The step of forming the line and space pattern includes a multiple patterning process. The method for manufacturing a semiconductor device according to claim 12 .

14. The step of forming the line and space pattern includes SAQP (Self Aligned Quadrable Patterning), The method for manufacturing a semiconductor device according to claim 12 .

15. the line and space pattern has periodicity in a first direction; Each first component comprises a flat region; each second component is formed from a part of the line and space pattern; a length of the first component in the first direction is an odd multiple of a half pitch of the line and space pattern; Each second component is symmetrical with respect to a line that passes through the center of the second component in parallel with a second direction perpendicular to the first direction. The method for manufacturing a semiconductor device according to claim 12 .

16. a length of the first component and the second component in a second direction perpendicular to the first direction is an odd multiple of the half pitch; 16. The method for manufacturing a semiconductor device according to claim 15.

17. the second component includes a space contacting the first component adjacent to the second component in the positive direction of the first direction, and a space contacting the first component adjacent to the second component in the negative direction of the first direction, 16. The method for manufacturing a semiconductor device according to claim 15.

18. the second component includes a line contacting the first component adjacent to the second component in the positive direction of the first direction, and a line contacting the first component adjacent to the second component in the negative direction of the first direction, 16. The method for manufacturing a semiconductor device according to claim 15.

19. The half pitch is 20 nm or less.

16. The method for manufacturing a semiconductor device according to claim 15.

20. In the first direction, a difference between a length of the first component and a length of the second component is equal to twice the half pitch.

20. The method for manufacturing a semiconductor device according to claim 15,

Images