Solid raw material sublimation system

Abstract

To provide an evaporation system for a chemical vapor supply in a system including a semiconductor processing apparatus.SOLUTION: Provided is a solid raw material chemical material sublimation system. The solid raw material chemical material sublimation system may include a housing 310 configured to hold a solid chemistry reaction material therein. A lid 306 may be arranged on a near part of the housing. The lid may include a fluid inlet port 384 and a fluid outlet port 388, and a meander route 374 may be defined in a distant part of the lid. The lid may be configured so as to flow a gas in a flow route. The solid raw material chemical material sublimation system may include a filter 396 arranged between the meander route and a distant part of the housing. The filter may have a gap configured so as to limit a pass of the solid chemical reaction material.SELECTED DRAWING: Figure 12

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of priority to U.S. Provisional Application No. 62 / 719,027, filed August 16, 2018, entitled "SOLID SOURCE SUBLIMATOR," the entire contents of which are incorporated herein by reference. [Background technology]

[0002] A typical solid or liquid source reactant delivery system includes a solid or liquid source vessel and a heating means. The vessel may contain the chemical reactant to be vaporized. A carrier gas carries the reactant vapor through the vessel's outlet and ultimately into the substrate reaction chamber. Typically, one isolation valve is located upstream of the vessel's inlet and another isolation valve is located downstream of the vessel's outlet.

[0003] TECHNICAL FIELD This application relates generally to systems and methods involving semiconductor processing equipment, and more particularly to evaporation systems for chemical vapor delivery. Summary of the Invention

[0004] Some embodiments of a solid source chemical sublimator can include a housing configured to hold a solid chemical reactant therein. The housing can include a proximal portion and a distal portion and can have a housing axis extending along the length of the housing. A lid can be disposed on the proximal portion of the housing. The lid can include a fluid inlet and a fluid outlet and can define a serpentine flow path within the distal portion of the lid. The lid can be configured to allow gas to flow within the flow path. The solid source chemical sublimator can include a filter disposed between the serpentine flow path and the distal portion of the housing. The filter can have a void configured to restrict passage of the solid chemical reactant.

[0005] The details of one or more embodiments of the subject matter described herein are set forth in the accompanying drawings and the description below. Other features, aspects, and advantages will become apparent from the description, drawings, and claims. Neither this summary nor the following detailed description is intended to define or limit the scope of the inventive subject matter. [Brief explanation of the drawings]

[0006] These and other aspects of the present disclosure will become readily apparent to those skilled in the art upon consideration of the following description, the appended claims, and the drawings which illustrate, but do not limit, the invention.

[0007] [Figure 1] FIG. 1 is a solid source chemical sublimator that can be used as a chemical vaporizer in some embodiments. [Figure 2] FIG. 2 is another example of a solid source chemical sublimator according to some embodiments. [Figure 3] Figure 3A is a top perspective view of an exemplary housing of some embodiments, and Figure 3B is a close-up view of the interior of the housing, showing the flow channel and cross recess of some embodiments. [Figure 4] FIG. 4 is an example of an exterior view of a solid source chemical sublimator according to some embodiments. [Figure 5] FIG. 5 is an exemplary filter frame of some embodiments. [Figure 6] FIG. 6 is a bottom perspective view of the filter frame of FIG. [Figure 7] FIG. 7 is a side view of a filter frame with a sublimator shaft. [Figure 8] Fig. 8A is a top view of the filter frame of Figs. 5 to 7. Fig. 8B is a bottom view of the filter frame of Figs. [Figure 9] FIG. 9 is a top view of the filter insert. [Figure 10] FIG. 10 is a vertical cross-sectional view of the filter insert of FIG. [Figure 11] FIG. 11 is a cross-sectional perspective view of the filter insert shown in FIGS. [Figure 12] FIG. 12 is a cross-sectional view of an exemplary solid source chemical sublimator including a housing, a lid, a conduit, one or more conductive protrusions, and a base, according to some embodiments. [Figure 13] Figure 13A is an exemplary lid that may be included with a solid source chemical sublimator according to some embodiments. Figure 13B is a cross-sectional detail view of an exemplary solid source chemical sublimator according to some embodiments. [Figure 14] FIG. 14 is an exemplary solid source chemical sublimator showing multiple conductive protrusions. [Figure 15] FIG. 15 shows how the conduit, conductive protrusions, and base are assembled according to some embodiments. [Figure 16] FIG. 16 is an embodiment of an exemplary solid source chemical sublimator having multiple resonators according to some embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0008] The headings provided herein, if any, are for convenience only and do not necessarily affect the scope or meaning of the claimed invention. This specification describes a system and related methods for delivering vaporized or sublimated reactants into a high-volume deposition module.

[0009] The following detailed description sets forth specific embodiments to aid in understanding the claims, but the invention can be practiced in many different embodiments and ways, as defined and covered by the claims.

[0010] A chemical reactant or solid source supply system can include a solid or liquid source container and heating means (e.g., a heater, e.g., a radiant heat lamp, a resistance heater, etc.). The container contains a solid or liquid source precursor (e.g., in powder form). The heater heats the container and vaporizes the reactant within the container. The container can have an inlet and an outlet for the flow of a carrier gas (e.g., N2) through the container. The carrier gas may be inert. Typically, the carrier gas sweeps the reactant vapor (e.g., sublimated chemical reactant) through the container outlet and ultimately into the substrate reaction chamber. Typically, the container includes an isolation valve for fluidly isolating the contents of the container from the exterior of the container. One isolation valve can be located upstream of the container inlet and another isolation valve can be located downstream of the container outlet. The source container of some embodiments includes, consists essentially of, or consists of a sublimator. That is, whenever a "source container" is referred to herein, a sublimator (e.g., a "solid source chemical sublimator") is also expressly intended.

[0011] Chemical vapor deposition (CVD) is a known process in the semiconductor industry for forming thin films of materials on substrates, such as silicon wafers. In CVD, reactant vapors (including "precursor gases") of different reactant chemicals are supplied to one or more substrates in a reaction chamber. Often, the reaction chamber contains only a single substrate supported on a substrate holder (e.g., a susceptor), and the substrate and substrate holder are maintained at a desired process temperature. In a typical CVD process, mutually reactive reactant vapors react with each other to form a thin film on the substrate, with the growth rate related to the temperature and the amount of reactant gas. In some variations, the energy driving the deposition reactants is provided in whole or in part by a plasma.

[0012] In some applications, reactant gases are stored in gaseous form in reactant source vessels. In such applications, reactants are often gases at standard pressure and temperature, approximately 1 atmosphere and room temperature. Examples of such gases include nitrogen, oxygen, hydrogen, and ammonia. However, in some cases, vapors of source chemicals ("precursors") that are liquids or solids (e.g., hafnium chloride, hafnium oxide, zirconium dioxide, etc.) at standard pressure and temperature are used. Some solid materials (referred to herein as "solid source precursors," "solid chemical reactants," or "solid reactants") have very low vapor pressures at room temperature, so they are typically heated and / or maintained at very low pressures to generate sufficient reactant vapor for the reaction process. After vaporization (e.g., sublimation), it is important to maintain the vapor-phase reactant above its vaporization temperature throughout the processing system to prevent undesired condensation on valves, filters, conduits, and other components associated with delivering the vapor-phase reactant to the reaction chamber. Vapor-phase reactants from such naturally occurring solid or liquid materials are useful for chemical reactions in a variety of other industries.

[0013] Atomic layer deposition (ALD) is another known process for forming thin films on substrates. In many applications, ALD uses solid and / or liquid source chemicals, as described above. ALD is a type of vapor deposition in which films are deposited by self-saturating reactions performed in cycles. The thickness of the film is determined by the number of cycles performed. In an ALD process, gaseous reactants are sequentially and / or repeatedly delivered to a substrate or wafer to form a thin film of material on the wafer. One reactant adsorbs on the wafer in a self-limiting process. A different pulse of reactant then reacts with the adsorbed material to form a monolayer of the desired material. Decomposition can occur through interactions between adsorbed species and with appropriately selected reagents, such as ligand exchange or gettering reactions. Some ALD reactions form as few as one monolayer per cycle. Thicker films can be produced through repeated growth cycles until the desired thickness is achieved.

[0014] In some ALD reactions, mutually reactive reactants are kept separate in the gas phase by intervening removal processes between substrate exposures to different reactants. For example, in time-resolved ALD processes, reactants are delivered to a stationary substrate in pulses, typically separated by purge or evacuation phases. In space-resolved ALD processes, the substrate moves through zones of different reactants. Some processes can combine aspects of both space-resolved and time-resolved ALD. Those skilled in the art will appreciate that some variants or hybrid processes allow for a degree of CVD-like reaction by either selecting deposition conditions outside the typical ALD parameter window and / or allowing some overlap between mutually reactive reactants during substrate exposure.

[0015] Reactant source vessels typically have gas lines extending from inlets and outlets, isolation valves on the lines, and fittings on the valves that are configured to connect to the gas flow lines of the rest of the substrate processing equipment. It is often desirable to provide several additional heaters to heat the various valves and gas flow lines between the reactant source vessels and the reaction chamber to prevent reactant vapors from condensing and depositing on such components. Thus, the gas delivery components between the source vessels and the reaction chamber are sometimes referred to as a "hot zone," where the temperature is maintained above the vaporization / condensation / sublimation temperature of the reactants.

[0016] FIG. 1 illustrates a solid source chemical sublimator 100 that can be used as a chemical vaporizer in some embodiments. The sublimator can contain chemical reactants, such as solid or liquid source precursors. “Solid source precursor” has its customary and ordinary meaning in the art, in light of the present disclosure. It refers to a source chemical that is solid under standard conditions (i.e., room temperature and atmospheric pressure). In some embodiments, the solid source chemical sublimator 100 can include a base 140, a filter frame 120, a filter 130, and a housing 110. The solid source chemical sublimator 100 can define a sublimator axis 104. The filter 130 can have an air gap configured to restrict the passage (or movement) of chemical reactants through the filter. As described herein, FIG. 1 should not be construed as limiting the number of elements that the solid source chemical sublimator 100 can include. In some embodiments, the housing 110 is configured to be mechanically attached to the base 140. This can be done using one or more attachment means (e.g., bolts, screws, etc.). In certain embodiments, the housing 110 and the base 140 are mechanically attached in an airtight manner. In some embodiments, the solid source chemical sublimator 100 includes the filter frame 120 and the filter 130, but does not include the base 140 (e.g., the filter frame 120 supports the filter 130 and may provide a containment vessel on a surface of the interior 114 that is not surrounded by the filter). In some embodiments, the base 140 is integral to the filter frame 120. In some embodiments, the base 140 is removably secured onto the filter frame 120.

[0017] In certain configurations, the base 140 is configured to hold a solid source chemical. The base 140 may include a substantially flat surface for holding a chemical reactant, although other shapes and variations are possible. As described in more detail herein, the filter frame 120 can be configured to allow a carrier gas to pass therethrough. In some embodiments, as shown, the filter frame 120 is positioned adjacent to the filter 130. In certain configurations, adjacent includes being in physical contact. The solid source chemical sublimator 100 can define an interior 114, e.g., the space between the interior walls of the filter 130 and the space between the ceiling of the housing 110 and the floor of the base 140. In some embodiments, the interior 115 is configured to contain a chemical reactant, e.g., a solid source chemical. The solid source chemical sublimator 100, or portions thereof, e.g., the filter frame 120 and the filter 130, can be formed in a variety of ways. For example, the solid source chemical sublimator 100 can include two or more sides stacked and / or attached to one another. In another configuration, filter 130 can fit inside filter frame 120 (e.g., snap fit, slide fit, friction fit, etc.). In some embodiments, filter frame 120 can be positioned adjacent to at least a portion of the exterior surface of filter 130.

[0018] In some embodiments, the height of the solid source chemical sublimator 100 assembly can range from approximately 25 cm to 120 cm. In some embodiments, the height can range from approximately 50 cm to 100 cm, and in some embodiments, is approximately 60 cm (approximately 24 inches). In some embodiments, the width (e.g., diameter) of the solid source chemical sublimator 100 can range from approximately 20 cm to 50 cm. In some embodiments, the width of the solid source chemical sublimator 100 can range from approximately 30 cm to 40 cm, and in certain embodiments, is approximately 38 cm (approximately 15 inches). In some embodiments, the vessel 104 can have a height:diameter aspect ratio ranging from approximately 1 to 4. In some embodiments, the vessel is shaped approximately like a cylinder, although other shapes are possible. That is, in some embodiments, the housing 110 comprises, consists essentially of, or consists of a cylindrical shape. In some embodiments, the mass of the (unfilled) solid source chemical sublimator 100 in various embodiments described herein can range from approximately 10 kg to 50 kg. In some embodiments, the mass of a filled solid source chemical sublimator 100 can range from approximately 35 kg to 85 kg. A smaller mass vessel can be more easily transported, while a larger mass provides a larger reactant volume and requires less refilling.

[0019] FIG. 2 illustrates another exemplary solid source chemical sublimator 100 of some embodiments. As shown, the solid source chemical sublimator 100 can include a refill opening 154 in the housing 110, through which a chemical reactant (e.g., a solid precursor) can be placed into the solid source chemical sublimator 100. The housing 110 can include a separate lid and sidewall (as shown) or can be formed from a single structure. The lid may include a cylindrical shape. In some embodiments, the lid and base 140 of the housing are fluid-tight, preventing substantial gas flow into and / or out of the vessel 104, except as described herein. The chemical reactant can be contained in the interior 114 of the solid source chemical sublimator 100. As shown, in some embodiments, the solid source chemical sublimator 100 can include a receptacle 158, which can be configured to receive a corresponding heating rod 162. Other heating elements, such as those described herein, can be included. The heating element, including the heating rod 162, can be configured to enable the interior 114 to reach an operating temperature, as described in more detail herein. In some embodiments, one or more controllers (not shown) can be included and configured to perform ALD, as described in more detail herein. In some embodiments, the one or more controllers include a processor and memory programmed to perform ALD. The one or more controllers can be configured to control all heaters in the deposition module, pumps, valves to the pumps for pressure control, robotic controls for substrate processing, and / or valves controlling vapor flow, including carrier flow to and vapor flow from the solid source chemical sublimator 100.

[0020] The illustrated solid source chemical sublimator 100 and any attached deposition modules are particularly suited to supplying gas-phase reactants for use in one or more gas-phase reaction chambers. The gas-phase reactants can be used for chemical vapor deposition (CVD) or atomic layer deposition (ALD). In some embodiments, a control processor and programming stored on a computer-readable medium are included to configure the embodiments disclosed herein to perform ALD. In certain embodiments, a control processor and programming stored on a computer-readable medium are included to configure the embodiments disclosed herein to perform CVD.

[0021] The entry of the carrier gas can occur at one end of the solid source chemical sublimator 100, for example, near the bottom in the illustrated embodiment. The flow of the carrier gas into the solid source chemical sublimator 100 can occur at one or more inlets (not shown) in the filter frame 120. The filter frame 120 can include channels (e.g., recesses, protrusions) or portions thereof for directing the flow of the carrier gas. The flow rate of the carrier gas can be controlled by opening or closing one or more associated inlet valves (not shown). The inlets can be at or near the bottom of the solid source chemical sublimator 100 or at or near the top of the solid source chemical sublimator 100. The outlets can be located on the opposite side of the solid source chemical sublimator 100. For example, the outlets can be located at the top of the solid source chemical sublimator 100. However, other configurations are possible. For example, the outlets can be located at or near the bottom of the solid source chemical sublimator 100 and / or the outlets can be located at or near the same end as the inlets. The inlet and outlet may be positioned such that a flow path as described herein is disposed between the inlet and outlet.

[0022] Filter frame 120 can include flow channels machined (e.g., milled, formed) into filter frame 120. Flow channels 150 can include recesses or protrusions (as shown). Additionally or alternatively, housing 110 can include housing recesses or housing ridges 112 (as shown). Such housing ridges 112 can provide a better structural fit between housing 110 and filter frame 120, but can also or alternatively provide a structural boundary for flow channels 150. Flow channels 150 can be formed in flow channels 150 (as shown) and / or in housing 110.

[0023] For example, a fluid (e.g., a carrier gas) can be inserted into an end (e.g., bottom) of the solid source chemical sublimator 100 and passed through a flow passage 150 in the filter frame 120. The flow passage 150 may extend along the exterior of the filter frame 120. Additionally or alternatively, the filter frame 120 may be disposed along the interior surface of the housing 110. In some embodiments, the flow passage 150 extends circumferentially around the filter frame 120. The filter frame 120 may include one or more vertically stacked ring channels, as shown. In such embodiments, one or more cross-sectional recesses or channels (not shown in FIG. 2 ) allow fluid flow between each ring channel. Because each ring channel is parallel to the ground surface and / or base 140, the pitch of each ring channel can be said to be zero. Thus, for example, fluid flow can occur along the exterior of the filter frame 120, but the fluid can flow generally upward in the direction of the sublimator axis 104. Thus, fluid flow can be approximately the perimeter of the filter frame 120 (e.g., approximately half the perimeter for each level of channel (e.g., ring channel)) before reaching the transverse channels. The number of channel layers can range from about 12 to 45, and in some embodiments, the number is about 23.

[0024] In some embodiments, the path comprises a continuous path having a substantially constant pitch greater than zero. Thus, in such embodiments, the flow path 150 can comprise a single path between the inlet and outlet that slopes continuously (e.g., upward) relative to the direction of flow. The slope relative to the direction of flow can be either upward or downward.

[0025] It will be appreciated that a longer path length can increase the length of time of gas exposure of the sublimated solid source chemical. The channels 150 can have a combined total length ranging from about 500 cm to 2500 cm. In some embodiments, the total length ranges from about 750 cm to 1800 cm, and in an exemplary embodiment is about 1400 cm (3556 inches).

[0026] A filter 130 can be provided between the interior 114 and the filter frame 120 to restrict, slow, reduce, inhibit, or even prevent the passage of chemical reactants (e.g., non-sublimating reactants) through the filter 130. In this manner, solid reactants can be prevented from accidentally entering the flow path 150 (e.g., during transport). The filter 130 can comprise, consist essentially of, or consist of a ceramic material (e.g., ceramic filter media) or a metal mesh, or a combination thereof. The metal mesh may comprise, consist essentially of, or consist of another durable metal, for example. Similarly, in some embodiments, one or more of the housing 110 (e.g., including the lid) and / or the base 140 can comprise, consist essentially of, or consist of a metal. In some embodiments, the housing 110, the housing lid 113, and / or the base 140 can each be a unitary metal component. The voids in the filter 130 can be configured to limit the passage of chemical reactants from the interior 114 to the flow passage 150 to a transport rate not substantially greater than the sublimation rate of the chemical reactants within the flow passages due to the carrier gas. Thus, the filter 130 can promote the flow of sublimated reactants, which can improve the rate of saturation of the carrier gas with the sublimated precursor. The filter material can be configured to restrict the passage of particles larger than a specific size, e.g., about 0.003 μm. The material can include any of a variety of different materials typically incorporated into gas or liquid filters, such as nickel fiber media, stainless steel, ceramic (e.g., alumina), quartz, or two or more of the listed materials. As described in more detail herein, the solid source chemical sublimator 100 can include an elongated passageway that allows contact between the carrier gas and a large volume of solid reactant. In some embodiments, the voids in the filter 130 restrict the movement of the chemical reactant from the interior 114 to the flow path 150 so that the rate of movement of the chemical reactant from the interior 114 to the flow path 150 does not substantially exceed the rate at which the chemical reactant is sublimated by the carrier gas in the flow path 150.It will be understood that the rate of movement of a chemical reactant from interior 114 to flow channel 150 can be expressed as a ratio of the amount of chemical reactant to time (e.g., moles / second, g / minute, etc.), and that the rate at which a chemical reactant sublimes within a flow channel can also be expressed as a ratio of the amount of chemical reactant to time (e.g., moles / second, g / minute, etc.). Thus, it will be understood that a comparison of the rate of movement of a chemical reactant from interior 114 to flow channel 150 and the sublimation rate of a chemical reactant within flow channel 150 can be readily converted to the same units (if they are not already in the same units) to enable an effective comparison; in some embodiments, the rate of movement of a chemical reactant from interior 114 to flow channel 150 is substantially the same as, for example, the sublimation rate of a chemical reactant on the flow channel. "Substantially" in this context has its ordinary and customary meaning, as would be understood by one of ordinary skill in the art in light of this disclosure. For example, one could refer to two rates that are not significantly different to avoid clogging of the flow channel 150 with the reactant (which may occur if the transport rate through the filter is significantly greater than the sublimation rate) and to ensure continuous sublimation over a majority of the surface area of ​​the flow channel configured to hold the reactant. If greater numerical precision of "substantially" is desired, in some embodiments the transport rate can be, for example, within ±30%, ±25%, ±20%, ±15%, ±10%, or ±5% of the sublimation rate.

[0027] Fluids (e.g., carrier gas and / or reactant gas) passing through flow channel 150 can exit solid source chemical sublimator 100 at one or more exit points or outlets (not shown), which can lead to another flow control device (e.g., a valve) and / or one or more deposition chambers. The effluent from solid source chemical sublimator 100 then includes carrier gas and reactant gas vaporized from the interior of solid source chemical sublimator 100. In some embodiments, interior 114 is configured to include a headspace after filling with chemical reactants. The headspace can be in fluid communication with flow channel 150 and / or inlets and outlets (not shown) and can be configured for sublimation of chemical reactants by fluid (e.g., carrier gas) within the headspace. Thus, the headspace can provide a fail-safe so that chemical reactants can continue to sublimate if filter 130 becomes clogged or is unable to transport chemical reactants to flow channel 150. For example, the headspace can be in fluid communication with the flow path 150, and the fluid communication does not traverse the filter 130, thereby allowing sublimation of the chemical reactant into the flow path even if the filter becomes clogged or is unable to transport the chemical reactant into the flow path 150.

[0028] An inert or inert gas is preferably used as a carrier gas for the vaporized precursor. The inert gas (e.g., nitrogen, argon, helium, etc.) may be supplied to the solid source chemical sublimator 100 through one or more sublimator inlets (not shown). In some embodiments, different inert gases may be used for various processes and systems described herein. It will be understood that additional valves and / or other fluid control elements not shown may be included. For example, in addition to the inlet valve, a separate outlet valve may also be provided.

[0029] It will be understood that other valves and / or other fluid elements not shown may be included. Other valves and other fluid elements not shown may be included in certain configurations. Further information regarding the system fluids is provided in U.S. Patent No. 8,137,462, filed October 10, 2007, entitled "PRECURSOR DELIVERY SYSTEM," the entire contents of which are incorporated herein by reference for all purposes.

[0030] Some embodiments of the methods described herein may include a pretreatment process applied to the substrate surface. The pretreatment may include one or more processes. In the pretreatment, the substrate surface on which a first reactant (e.g., including a metal) is to be deposited may be exposed to one or more pretreatment reactants and / or specific conditions, such as temperature or pressure. Pretreatment may be used for a variety of reasons, including cleaning the substrate surface, removing impurities, removing native oxides, and / or providing a desired surface termination that promotes subsequent deposition reactions or adsorption. In some embodiments, the pretreatment includes exposing the substrate surface to one or more pretreatment reactants, such as oxidizing and / or cleaning reactants, such as HO, O, HCl, HBr, Cl, HF, plasma products, etc. In some embodiments, the pretreatment process includes one or more exposures of the substrate to a suitable chemical, the exposures ranging from about 0.05 seconds to about 600 seconds, preferably from about 0.1 seconds to about 60 seconds. In some embodiments, the pressure during the pretreatment process is maintained between about 0.01 Torr and about 100 Torr, preferably between about 0.1 Torr and about 10 Torr. In some embodiments, multiple pretreatment reactants are used sequentially or simultaneously. In some embodiments, pretreatment can include multiple applications of one or more pretreatment reactants.

[0031] The pretreatment process may utilize pretreatment reactants in vapor and / or liquid form. The pretreatment process may be carried out at the same temperature and / or pressure as the subsequent ALD process. However, it may also be carried out at a different temperature and / or pressure. For example, if the ex situ pretreatment involves immersion of the substrate in an aqueous solution, it may be desirable to proceed with the pretreatment at a higher pressure than the ALD process, which may be carried out at a relatively low pressure that may unnecessarily evaporate the pretreatment reactants.

[0032] A reactant may also be referred to as a precursor, which is an element that remains in the film where the reactant is deposited. In some embodiments using a stationary substrate (time-resolved ALD), the first reactant is introduced into the reaction chamber in the form of a vapor pulse and contacts the surface of the substrate. If the first reactant is an adsorbed precursor, conditions can be selected to self-limit and result in adsorption of only about one monolayer of precursor on the substrate surface. The first precursor pulse is provided in a gaseous state. A first precursor gas is considered "volatile" herein if its species exhibits sufficient vapor pressure under process conditions to transport the species to the workpiece in sufficient concentration to saturate the exposed surface.

[0033] In some embodiments, the first precursor contacts the substrate for about 0.01 seconds to about 60 seconds, about 0.02 seconds to about 30 seconds, about 0.025 seconds to about 20 seconds, about 0.05 seconds to about 5.0 seconds, about 0.05 seconds to about 2.0 seconds, or about 0.1 seconds to about 1.0 second. As one skilled in the art will appreciate, the exposure time to ensure surface saturation will depend on the volume of the reactor, the size of the substrate, the precursor concentration in the carrier gas, and the process conditions.

[0034] The first precursor used in an ALD-type process may be a solid, liquid, or gaseous material under standard conditions (room temperature and atmospheric pressure), provided that the first precursor is in the gas phase before being introduced into the reaction chamber and contacting the substrate surface. In some embodiments, the first precursor may comprise a metal and may be in the form of a solid source, such as a powder, under standard conditions in the solid source chemical sublimator 100 described herein.

[0035] Excess first reactant and reaction by-products, if any, can be removed from the substrate surface, for example, by supplying an inert gas, such as nitrogen or argon. The vapor precursor and / or vapor by-products are removed from the substrate surface, for example, by evacuating the chamber with a vacuum pump and / or by replacing the gas in the reactor with an inert gas, such as argon or nitrogen. Typical removal times are about 0.05 to 20 seconds, more preferably about 1 to 10 seconds, and even more preferably about 1 to 2 seconds. However, other removal times can be utilized as needed, such as when depositing a layer on a structure with a very high aspect ratio or other structure with complex surface morphology. Those skilled in the art can readily determine suitable removal times based on the particular circumstances.

[0036] In some embodiments, removing excess first reactant and reaction by-products, if present, can include moving the substrate so that the first reactant is no longer in contact with the substrate. In some embodiments, reactants may not be removed from various portions of the chamber. In some embodiments, the substrate is moved from one portion of the chamber containing the first precursor to another portion of the chamber containing the second reactant or no reactant at all. In some embodiments, the substrate is moved from a first reaction chamber to a second, different reaction chamber. In such embodiments, the substrate may be moved, for example, through a zone or curtain of inert gas to facilitate removal, similar to purging the chamber for stationary substrates.

[0037] The substrate may be contacted with a second reactant (e.g., a precursor). In some embodiments, the second reactant comprises oxygen (e.g., water vapor, ozone, etc.). In some embodiments, the second precursor contacts the substrate for about 0.01 seconds to about 60 seconds, about 0.02 seconds to about 30 seconds, about 0.025 seconds to about 20 seconds, about 0.05 seconds to about 5.0 seconds, about 0.05 seconds to about 2.0 seconds, or about 0.1 seconds to about 1.0 second. However, depending on the type of reactor, the type of substrate, and its surface area, the contact time of the second precursor may be even longer than 10 seconds. In some embodiments, particularly in large-volume batch reactors, the contact time may be on the order of several minutes. One of ordinary skill in the art can readily determine the optimal contact time based on the particular circumstances.

[0038] The concentration of the second precursor in the reaction chamber can be from about 0.01% to about 99.0% by volume, and the second precursor is present in a concentration of about 1 standard cm for a typical single substrate reactor. 3 / min~about 4000 standard cm 3 / min。 One skilled in the art will understand that reaction conditions outside the above ranges may be suitable for a particular type of reactor.

[0039] Excess second reactant and gaseous byproducts of the surface reaction, if any, can be removed from the substrate surface. In some embodiments, it is preferable to remove excess reactant and reaction byproducts using an inert gas. The contacting and removing steps may be repeated as necessary until a thin film of the desired thickness is formed on the substrate, with each cycle leaving as little as one monolayer in a pure ALD process. However, those skilled in the art will understand that in some embodiments, layers greater than a monolayer can be achieved by modifying conditions outside of theoretical ALD conditions. For example, some overlap between mutually reactive reactants may result in partial or hybrid CVD-type reactions. In some cases, it may be desirable to select a temperature above the normal ALD window by injecting energy by other means (e.g., plasma products) to achieve at least partial decomposition of at least one of the various precursors, or condensation of multiple monolayers of the first reactant can be achieved by selecting a temperature below the normal ALD window of those reactants.

[0040] Various other modifications or additions to the above process are possible. For example, more complex cycles may include phases of additional precursors or other types of reactants (reducers, oxidizers, gettering agents, plasma or thermal treatments, etc.). Different cycles may be used at selected relative frequencies to tailor the desired film composition. For example, silicon oxynitride may include five cycles of silicon oxide for every one cycle of silicon nitride, or any other desired cycle ratio depending on the desired nitrogen content; the ratio can be varied during deposition if a gradient in layer composition is desired. Furthermore, because the process is cyclic, the "first" reactant can be fed second without substantially altering the process.

[0041] In some embodiments, the electronics and / or computer elements used in controlling one or more deposition chambers may be located elsewhere in the system. For example, a central controller may control both the apparatus with one or more chambers, as well as the valves connecting the solid source chemical sublimator 100 and all associated heaters. One or more valves may be used to control the flow of gases throughout the multi-chamber deposition module 300.

[0042] In some cases, to minimize disturbance during vessel movement when filling or refilling precursor powder, the precursor source vessel, e.g., solid source chemical sublimator 100, is supplied with a head pressure of inert gas (e.g., helium) within the vessel. It may be desirable to vent this overpressure prior to operation. Thus, in certain embodiments, a separate vent valve may be used to release pressure within the interior 114 of the solid source chemical sublimator 100 prior to operation.

[0043] As will be appreciated by those skilled in the art, it can be advantageous to reduce the volume or footprint that a solid source chemical sublimator 100 would require. A compact vessel assembly can reduce such footprint. In certain embodiments, each solid source chemical sublimator 100 is approximately 75 cm 2 ~150cm 2 (eg, where the solid source chemical sublimator 100 is located).

[0044] The ability to hold a large mass and / or volume of solid source chemical within solid source chemical sublimator 100 can increase the time required between refill processes. This, in turn, allows for the sublimation of a larger mass of solid source chemical in the same amount of time. Thus, in some embodiments, solid source chemical sublimator 100 can be configured to hold between approximately 7.5 kg and 20 kg of a typical solid source chemical for vapor deposition, particularly an inorganic solid source metal or semiconductor precursor, such as HfCl4, ZrCl4, AlCl3, or SiI4. In some embodiments, solid source chemical sublimator 100 can be configured to hold between approximately 5 kg and 12 kg of solid source chemical. In some embodiments, solid source chemical sublimator 100 can be configured to hold at least 15 kg of a typical solid source chemical. The height of the solid source chemical can be between approximately 50% and 90% of the height of solid source chemical sublimator 100. In some embodiments, the height of the solid source chemical can be between approximately 65% ​​and 80%. The headroom above that fill height can be retained as a headspace where reactant vapors on the solid precursor can easily collect and the flow of carrier gas can pick up such vapors.

[0045] A longer path length and / or a larger mass of solid source chemical that a sublimator can hold can bring more precursor to the deposition chamber in the same amount of time. In some cases, a longer path length and / or a larger mass of solid source chemical can increase the amount of saturation that can be achieved in the same amount of time. In some embodiments, the elapsed time between two successive vapor processes (e.g., pulse / purge length) can be about 100 milliseconds to 3 seconds. In some embodiments, the elapsed time can be about 30 milliseconds to 1.5 seconds.

[0046] The size of the container can be related to the amount of solid source chemical, e.g., the volume enclosed by the container (cm 3The ratio of mass (kg) of solid source chemical that the container can hold can range from about 20 to 45. In certain configurations, the ratio can range from about 1 to 10. These ranges can be determined in part by the inherent limitations of the container, the materials used, and space limitations.

[0047] The channel 150 can have a height and a width (e.g., the height and width of the recess). In some embodiments, the height can be about 2 cm to 10 cm. In some embodiments, the height can be about 1 cm to 6 cm. In some embodiments, the width can be about 1 cm to 6 cm. In some embodiments, the width can be about 0.2 cm to 4 cm. In some embodiments, the height and width can be defined as a height:width aspect ratio of 3 to 7. In some embodiments, the height and width can be defined as a height:width aspect ratio of 4 to 5.5.

[0048] In some embodiments, the deposition module and / or solid source chemical sublimator 100 can include one or more heating elements. In some embodiments, one or more of the heating elements can be positioned vertically adjacent to or vertically proximate to the solid source chemical sublimator 100. In some embodiments, the one or more heating elements are configured to heat the sublimator 100 by conduction. Certain embodiments may include a heater plate positioned below the base 140. In certain embodiments, a heater can be positioned above the housing 110. In some embodiments, one or more valves can be conductively and / or radiatively heated. In some embodiments, one or more high-temperature supply troughs can be included in the walls and / or center of the solid source chemical sublimator 100 (e.g., in the interior 114) to more directly supply heat to the solid chemical reactants. The solid source chemical sublimator 100 can be placed in a cabinet configured to be airtight so that it can be evacuated to a low pressure, e.g., 0.1 Torr to 20 Torr, e.g., about 5 Torr, thus facilitating efficient radiative heating that minimizes conductive or convective losses to the atmosphere within the cabinet.

[0049] The solid source chemical sublimator 100 can be configured to operate at an operating temperature. For example, the operating temperature can be determined based on the desired flow rate of the sublimated reactant through the filter 130, as described herein. Additionally or alternatively, the operating temperature may be determined based on the desired sublimation rate of the chemical reactant. In some embodiments, the operating temperature ranges from about 20°C to 250°C. Of course, the operating temperature selected will depend on the chemical being vaporized. For example, the operating temperature may be about 160°C to 240°C, about 170°C to 190°C, particularly for HfCl4, about 170°C to 250°C, particularly for ZrCl4, about 90°C to 110°C, and about 90°C to 120°C for Al2Cl3. Those skilled in the art will readily recognize that other temperatures can be selected for other source chemicals.

[0050] In some embodiments, a solid source assembly (as disclosed herein) can be operated at a target vacuum pressure. In some embodiments, the target vacuum pressure can be in the range of about 0.5 Torr to 20 Torr, for example, 5 Torr. In certain embodiments, the vacuum pressure within the solid source assembly can be regulated using one or more pressure controllers.

[0051] 3A-3B show an exemplary housing 110 including multiple flow channels 150. As described herein, the flow channels 150 can be formed at least partially within the housing 110, external to the filter frame 120, or both. FIG. 3A shows a top perspective view of the exemplary housing 110. FIG. 3B shows an enlarged view of the interior of the housing 110, illustrating the flow channels 150 and the transverse recess 170. The transverse recess 170 may additionally or alternatively be formed in the filter frame 120. FIG. 4 is an example of an exterior view of the solid source chemical sublimator 100.

[0052] FIG. 5 shows an example of a filter frame 120. In some embodiments, the filter frame 120 can include a base 140. In some embodiments, the filter frame 120 can include a lid (not shown). The filter frame 120 can include, for example, one or more frame support elements 124 on the filter frame 120. The frame support elements 124 can be attached between successive protrusions 150a on the filter frame 120. Alternating recesses can be formed between corresponding protrusions on the filter frame 120. In this manner, flow channels 150 can be formed to allow carrier gas to pass through. One or more transverse recesses 170 can be formed (e.g., in the filter frame 120) to allow gas to flow parallel (e.g., perpendicular) to the sublimation axis 104 (e.g., between successive recesses 150b). As described elsewhere, the transverse recesses 170 can additionally or alternatively be formed in the housing 110. On a particular side of the filter frame 120, transverse recesses 170 may be formed in alternating protrusions (e.g., skipping every other adjacent protrusion). Alternating transverse recesses 170 may be formed on opposite sides of the filter frame 120 (and / or housing 110). In this way, instead of the carrier gas traveling vertically, the gas can be directed horizontally at least partially (e.g., 180°) around the filter frame 120 before reaching the next transverse recess 170. This increases the length of the carrier gas flow path, allowing for greater saturation of the carrier gas with sublimated chemical reactants. FIG. 6 shows a bottom perspective view of the filter frame 120 of FIG. 5.

[0053] Figure 7 shows a side view of a filter frame 120 with a sublimation axis 104. The sublimation axis 104 can extend parallel to the general flow of carrier gas between the inlet and outlet of the filter frame 120. Figures 8A and 8B show top and bottom views of the filter frame 120 of Figures 5-7.

[0054] FIG. 9 shows a top view of a filter insert 200 according to some embodiments. The filter insert 200 can include a filter frame 120 and a filter 130. In some embodiments, the filter insert 200 can include a base 140. In some embodiments, the filter insert 200 can include a lid (not shown). As described herein, the filter insert 200 can be configured (e.g., molded, sized) to fit within a corresponding housing 110. The filter insert 200 can have a filter frame width 182 or diameter. The filter frame width 182 can be between about 20 cm and 50 cm. The filter frame 120 can have a wall thickness of between about 1 cm and 10 cm at its thickest point. In some embodiments, the filter frame 120 has a wall thickness of between about 2 cm and 4 cm. The filter 130 can have a wall thickness of between about 1 cm and 10 cm at its thickest point. In some embodiments, the filter 130 has a wall thickness of between about 2 cm and 4 cm. The ratio of the wall thickness of filter frame 120 to the wall thickness of filter frame 120 can be between about 0.3 and 2. In some embodiments, the ratio is about 1. In some embodiments, filter insert 200 can be configured to be inserted into housing 110 and filled with chemical reactants. In some embodiments, filter insert 200 can contain chemical reactants and be configured to be inserted into housing 110 (while already containing chemical reactants). In some embodiments, filter insert 200 can be configured to be inserted into housing 110 already containing chemical reactants.

[0055] Figure 10 shows a vertical cross-sectional view of the filter insert 200 of Figure 9. Figure 11 shows a perspective view of the filter insert 200 shown in Figures 9-10.

[0056] 12 shows a cross section of an exemplary solid source chemical sublimator 300 including a housing 310, a lid 306, a heat transfer conduit 360, one or more conductive protrusions 364, and a base 340. The housing 310 can have a housing axis (unnumbered), which can be similar to the sublimator axis 104 disclosed above. The housing axis may be perpendicular to the plane of the lid 306 and / or the base 340 and extend along the length of the housing 310. The housing 310 can have a distal portion configured to hold a solid chemical reactant therein. The distal portion may extend from (and / or comprise a space enclosed by) the base 340 to a point on the housing 310 along the housing axis.

[0057] 12 , the lid 306 can be disposed at a proximal portion of the housing 310. For example, the lid 306 can be integral with the housing 310 or simply rest on the housing 310. The lid 306 can, in some designs, be removably or permanently attached to the housing 310. For example, the lid can be attached by friction (e.g., threading), compression (e.g., clamping), and / or screws. The lid 306 can include a fluid inlet 384 and a fluid outlet 388. As shown, the lid 306 defines a tortuous path 374 within a distal portion of the lid 306. The lid 306 can be configured to allow gas to flow within the flow path.

[0058] The illustrated solid source chemical sublimator 300 includes a filter 396 disposed between the serpentine path 374 and the distal portion of the base 340. In some configurations, the filter 396 is disposed between the fluid outlet 388 and the distal portion of the base 340 and / or housing 310. The filter 396 can have a gap configured to restrict the passage of solid chemical reactants. For example, the filter 396 can have a gap of about 0.0001 microns to about 85 microns. In some designs, the gap is about 0.1 microns to about 40 microns, and in some designs, about 20 microns. In some configurations, the filter 396 covers some, but not all, of the serpentine path 374 (note that to "cover" or "cover" the serpentine path, the filter does not necessarily have to be disposed above the serpentine path and can cover some or all of the serpentine path 374, for example, by being below the serpentine path 374). In some configurations, the filter 396 covers a majority of the serpentine path 374. In some configurations, the filter 396 covers the tortuous path 374. In some configurations, the filter 396 contacts the distal surface of the tortuous path 374.

[0059] The filter 396 can include an inlet in fluid communication with the fluid inlet 384 of the lid 306. The filter inlet can be configured to allow the solid chemical reactant to pass therethrough and enter the housing. The filter inlet can facilitate filling of the solid source chemical sublimator 300 with the solid source reactant, for example, by allowing filling without removing the filter 396 and / or the lid 306.

[0060] Filter 396 may comprise at least one of ceramic or metal (e.g., stainless steel, aluminum, etc.). Filter 396 may form a disk having an aspect ratio of thickness to diameter of approximately 25-1000. Filter 396 may have a diameter of approximately 20 cm-50 cm. One or both of fluid inlet 384 and / or fluid outlet 388 may be in fluid communication with tortuous path 374.

[0061] In some configurations, a distal facing portion of the lid 306 contacts the proximal surface of the filter 396. Additionally or alternatively, a proximal portion of the housing 310 may contact the distal surface of the filter 396.

[0062] The serpentine path 374 can comprise one or more anti-parallel segments and / or paths in the lid 306. The anti-parallel segments and / or paths may be disposed in a common plane. The serpentine path 374 can be milled into the lid 306 or defined by a separate piece of material that is not part of the lid 306. In some designs, the serpentine path 374 comprises a transverse path connecting at least two consecutive fluid paths of the plurality of flow paths of the serpentine path 374. The transverse path can be oriented substantially orthogonal to at least one of the two consecutive flow paths.

[0063] In some embodiments, the proximal portion of the housing can include a headspace in fluid communication with the tortuous path 374, and the carrier gas can be saturated with the chemical reactants in the headspace and the tortuous path 374. The headspace may remain in fluid communication with the flow path while the filter or tortuous path is clogged. One or both of the fluid inlet 384 and / or fluid outlet 388 can include a corresponding valve configured to allow fluid to flow therethrough (see, for example, FIG. 13B). Additionally or alternatively, one or both of the fluid inlet 384 and / or fluid outlet 388 can include a corresponding filter 390, 392 configured to restrict the flow of particulates therethrough. The surface of the lid 306 can include the tortuous path 374, and the surface can be circular. The housing 310 can be cylindrical, and / or the filter can be circular. As used herein, "cylindrical," "circular," and other descriptions of shape can encompass slight variations from a true Euclidean shape and thus can also include "approximately circular" and "approximately cylindrical."

[0064] The heat transfer conduit 360 can be conductive and can be disposed in conductive thermal communication with a heat source. The heat source can include one or more heating elements, such as a heating rod 362. The heating rod 362 can be disposed approximately along the housing axis. For example, the heating rod 362 can be disposed within the heat transfer conduit 360, as shown in FIG. 12 . Thus, a portion of the housing 310 remains disposed between the heating rod 362 and any solid source reactant, and the solid source reactant does not contact the heating rod. This can prevent the heating rod from being damaged by contact with the solid source reactant and / or deposition of the solid source reactant on the heating rod. Alternative configurations are possible. For example, a heating plate can be disposed distal to the base 340. The heating plate can be disposed adjacent (e.g., in conductive thermal communication) to or near the base 340. In some configurations, one or more heating elements can be disposed adjacent to the housing 310 and / or near the sidewalls.

[0065] 13A shows an exemplary lid 306 that may be included with the solid source chemical sublimator 300. A serpentine path 374 may be configured to allow the flow of gas therethrough. In some configurations, the serpentine path 374 may be milled and / or machined into the lid 306, or the lid 306 may be molded with the serpentine path 374. In some embodiments, the serpentine path 374 may be milled from a solid (e.g., cast) metal block.

[0066] 13B, in some embodiments, the serpentine path 374 can be in fluid communication with a fluid inlet 384 and / or a fluid outlet 388. The serpentine path 374 can be in fluid communication with an inlet valve 398 and / or an outlet valve (not shown). In some embodiments, the fluid inlet 384 is fluidly connected to the fluid outlet 388 by the serpentine path 374.

[0067] It will be appreciated that a longer path length can increase the surface area of ​​gas exposure of the solid source chemical. The serpentine path 374 of the lid 306 can have a length ranging from approximately 2000 mm to 8000 mm. In some embodiments, the serpentine path 374 can have a length ranging from approximately 3000 mm to 5000 mm. As will be appreciated by those skilled in the art, reducing the volume or footprint that the solid source chemical sublimator 300 will occupy can be advantageous. A compact sublimator can reduce or minimize such footprint. In certain embodiments, the lid 306 can have a height of approximately 25 mm to 50 mm. In certain configurations, the lid 306 can have a height of approximately 15 mm to 30 mm. In certain configurations, the lid 306 can have a height of approximately 40 mm to 80 mm.

[0068] A larger mass and / or volume of solid source chemical within and / or processed by solid source chemical sublimator 300 can result in a greater throughput of sublimated reactant. This, in turn, allows for the sublimation of a larger mass of solid source chemical in the same time period. In some embodiments, serpentine path 374 can be configured to contain between approximately 750 g and 2000 g of sublimated solid source chemical. The chemical reactant can include an inorganic solid source metal or semiconductor precursor, such as HfCl4, ZrCl4, AlCl3, or SiI4. A longer path length and / or a larger mass of solid source chemical, which lid 306 can aid in processing, can bring more precursor to a deposition chamber (not shown) in the same time period. In some cases, a longer path length and / or a larger mass of solid source chemical can increase the concentration of sublimated precursor that can be achieved in the same time period. In some embodiments, the serpentine path has a length effective to achieve saturation of the sublimated precursor at the temperature and pressure of sublimation. In some embodiments, the elapsed time between two successive vapor processes (e.g., pulse / purge length) can be between about 100 milliseconds and 3 seconds. In some embodiments, the elapsed time can be between about 30 milliseconds and 1.5 seconds. In some embodiments, the ratio of the volume or capacity (mm) of the serpentine path 374 to the total path length (mm) of the lid 306 can range from about 400 to 1200. These ranges can be determined in part by the inherent limitations of the vessel, the materials used, and space limitations.

[0069] FIG. 13B illustrates a cross-sectional detailed view of an exemplary solid source chemical sublimator 300. In certain configurations, the serpentine path 374 of the lid 306 can have a recess height 370 and a recess width 372. In some embodiments, the recess height 370 can be between about 10 mm and 50 mm. In some embodiments, the recess height 370 can be between about 20 mm and 40 mm. In some embodiments, the recess width 372 can be between about 3.0 mm and 20 mm. In some embodiments, the recess width 372 can be between about 5 mm and 8 mm. In some embodiments, the recess height 370 and the recess width 372 can define a height:width aspect ratio between 3 and 7. In some embodiments, the recess height 370 and the recess width 372 can define a height:width aspect ratio between 4.0 and 5.5.

[0070] FIG. 14 illustrates an exemplary solid source chemical sublimator 300 showing multiple thermally conductive protrusions 364. The solid source chemical sublimator 300 can include a thermally conductive heat transfer conduit 360 disposed along the housing axis. The multiple thermally conductive protrusions 364 can be radially disposed around the conductive heat transfer conduit 360 as shown. Alternative configurations are possible. The conductive protrusions 364 can be generally flat and have a high surface area (mm) to volume (mm) ratio (e.g., greater than 10, greater than 20, greater than 25). The distal portion of the housing 310 can be configured to hold the solid chemical reactant, with the conductive heat transfer conduit 360 disposed therebetween. As described above, the conductive heat transfer conduit 360 can be disposed in conductive thermal communication with a heat source. The solid source chemical sublimator 300 can include at least three, five, six, seven, eight, nine, or more conductive protrusions 364. The conductive protrusions 364 may extend from a distal portion of the housing (e.g., a sidewall, a base 340). The conductive protrusions 364 can be radially spaced apart from the housing axis. Additionally or alternatively, the conductive protrusions 364 can extend axially from the distal portion of the housing. The number of axially extending conductive protrusions 364 can be three, four, five, six, seven, eight, nine, or more, each radially spaced apart from one another. For example, if there are eight conductive protrusions 364, the eight conductive protrusions can be disposed at an angle of approximately 45 degrees between any two adjacent conductive protrusions. For example, if there are six conductive protrusions 364, the six conductive protrusions can be disposed at an angle of approximately 60 degrees between any two adjacent conductive protrusions.

[0071] The conductive protrusions 364 can assist in distributed and / or controlled heat flow to the solid source chemical reactant. This controlled heat flow can reduce or prevent undefined temperature drift throughout the reactant. Thermal modeling indicates that a configuration with eight radially distributed conductive protrusions 364 (as shown in FIG. 15 ) can achieve efficient and uniform heat flow through the solid source chemical reactant, resulting in efficient sublimation throughout the solid source chemical reactant within the housing 310. In some configurations, the conductive protrusions 364 are not active heaters, but rather act as conductors of heat from active heating elements (e.g., heating rods 362 and / or base plate heaters) located beneath the base 340.

[0072] The conductive protrusion 364 may be in thermal communication with the housing 310 and / or a distal portion of the base 340. The housing may include a receptacle configured to have a heating element (e.g., heating rod 362) inserted therein. The receptacle may be generally longitudinal and configured to extend axially the majority of the axial length of the housing 310. The receptacle may be positioned such that the heating element is exterior to the housing upon insertion (and thus does not contact the solid source chemical upon insertion).

[0073] The solid source chemical sublimator can have a variety of dimensions. For example, some configurations have an aspect ratio of axial length to diameter of about 20 to 0.5. Other configurations are possible.

[0074] 15 illustrates how the heat transfer conduit 360, conductive protrusions 364, and base 340 are assembled according to one configuration. As shown, eight conductive protrusions 364 are provided, each in thermal communication with the heat transfer conduit 360 and each extending radially therefrom. Additionally, as shown, each of the conductive protrusions 364 may be in thermal communication with the base 340.

[0075] FIG. 16 illustrates an embodiment of an exemplary solid source chemical sublimator 300 that includes one or more resonators 380. The resonators 380 can advantageously mix the reactants with the carrier gas, thus achieving a higher concentration of sublimated precursor than a source vessel lacking the resonators 380. Additionally or alternatively, the resonators 380 can help inhibit or prevent solidification of the solid source reactants. In some configurations, inhibiting or preventing solidification is achieved by mixing or stirring the solid source reactants. For example, some configurations include structural features (e.g., resonators 380) within the housing 310 that promote mixing of the flowing carrier gas with the reactant vapor formed from the vaporization of the solid reactants within the housing 310. The resonators 380 may be, for example, vertical (e.g., axial) extensions extending from the base 340. In certain configurations (not shown), the resonators 380 can be extensions that extend horizontally from the sidewalls of the housing 310, particularly in the lower third or so of the height of the housing 310. The resonators 380 may be located at a distal portion of the housing 310. One or more of the resonators 380 can comprise extensions that are radially disposed about the housing axis. The resonators 380 can be configured to agitate the solid chemical reactants within the housing, for example, by vibration and / or rotation.

[0076] Another embodiment For illustrative purposes, some non-limiting example configurations are given below.

[0077] In a first option, a solid source chemical sublimator comprises: a housing having an interior space and an interior surface facing the interior space; a filter having a first end and a second end, the filter having a void configured to restrict passage of a solid chemical reactant therethrough, the filter being shaped and arranged to define a flow path surrounding the filter in a space between the filter and the interior surface; and one or more flow paths defined between the filter and the interior surface of the housing, the one or more flow paths configured to allow fluid flow from the first end to the second end of the filter.

[0078] In a second option, the solid source chemical sublimator of option 1 further comprising a filter frame configured to support the filter.

[0079] In a third option, the solid source chemical sublimator of option 2, further comprising a base configured to receive a chemical reactant thereon, the filter frame being secured onto the base, the filter frame being configured to be disposed within the housing.

[0080] In a fourth option, the solid source chemical sublimator of any of options 1-3, wherein the filter void is configured to limit passage of the solid chemical reactant from the interior to the flow path to a transport rate that is not substantially faster than a sublimation rate of the chemical reactant in the flow path by the carrier gas.

[0081] In a fifth option, the solid source chemical sublimator of any one of options 1-4 further comprises a filter frame within the housing, the filter frame constraining the position of the filter.

[0082] In a sixth option, the solid source chemical sublimator of any one of options 1-5, wherein the flow passage is circumferentially disposed around an outer surface of the filter, an inner surface of the housing, or both.

[0083] In a seventh option, the solid source chemical sublimator of any one of options 1-6, wherein the flow path is at least partially defined by a recess disposed within the interior surface of the housing.

[0084] In an eighth option, the solid source chemical sublimator of any one of options 1-7, wherein the flow path is at least partially formed by a recess disposed in the filter.

[0085] In a ninth option, the solid source chemical sublimator of any one of options 1-8, wherein the flow path comprises a serpentine path that traverses the circumference of the housing multiple times.

[0086] In a tenth option, the solid source chemical sublimator of any one of options 1-9, wherein the flow path comprises a spiral path around the interior surface of the housing.

[0087] In an eleventh option, the solid source chemical sublimator of any one of options 1-10, wherein the flow path comprises a plurality of flow paths, and the crossover path connects at least two consecutive flow paths of the plurality of flow paths.

[0088] In a twelfth option, the solid source chemical sublimator of option 11, wherein the transverse path is oriented substantially perpendicular to at least one of the two successive flow paths.

[0089] In a thirteenth option, the solid source chemical sublimator of any one of options 1-12, wherein the filter cavity is configured to prevent reactants from passing therethrough at a first temperature and to allow reactants to pass therethrough at a second temperature.

[0090] In a fourteenth option, the solid source chemical sublimator of option 13, wherein the second temperature is greater than the first temperature.

[0091] In a fifteenth option, the solid source chemical sublimator of any one of options 11-14, wherein the second temperature is between 35°C and 200°C.

[0092] In a sixteenth option, the solid source chemical sublimator of any one of options 1-15, wherein the filter comprises at least one of ceramic or metal.

[0093] In a seventeenth option, the solid source chemical sublimator of any one of options 1-16, wherein the filter defines an aspect ratio of height to diameter of about 1-4.

[0094] In an eighteenth option, the solid source chemical sublimator of any one of options 1-17, wherein the filter has a height of about 25 cm to 120 cm.

[0095] In a nineteenth option, the solid source chemical sublimator of any one of options 1-18, wherein the filter has a diameter of about 20 cm to 50 cm.

[0096] In a twentieth option, the solid source chemical sublimator of any one of options 1-19, wherein the flow path is a ring.

[0097] In a twenty-first option, the solid source chemical sublimator of any one of options 1-20, wherein the flow path is configured to be in fluid communication with the base.

[0098] In a twenty-second option, the solid source chemical sublimator of any one of options 2-21, wherein the filter frame comprises a frame wall and a plurality of ridges formed thereon, the ridges defining at least a portion of the flow channels.

[0099] In a twenty-third option, the solid source chemical sublimator of any one of options 1-21, wherein a plurality of ridges are formed on the exterior surface of the filter, the ridges defining at least a portion of the flow channels.

[0100] In a twenty-fourth option, the solid source chemical sublimator of any one of options 1-23, wherein the housing comprises a fluid inlet and a fluid outlet, the fluid inlet and fluid outlet each in fluid communication with the flow path.

[0101] In a twenty-fifth option, the solid source chemical sublimator of any one of options 1-24, further comprising one or more heating elements in thermal communication with the interior.

[0102] In a twenty-sixth option, the solid source chemical sublimator of option 25, wherein the one or more heating elements comprise a heating plate disposed in thermal contact with the base.

[0103] In a twenty-seventh option, the solid source chemical sublimator of any one of options 23-26, wherein the one or more heating elements are selected from the group consisting of a heating rod and a heating plate, or a combination thereof.

[0104] In a twenty-eighth option, the solid source chemical sublimator of option 27, wherein the base comprises a receptacle configured for a heating rod to be inserted therein.

[0105] In a twenty-ninth option, the solid source chemical sublimator of any one of options 1-28, wherein the interior further comprises a headspace in fluid communication with the flow path, whereby the carrier gas can be saturated with the chemical reactant within the headspace and the flow path.

[0106] In a thirtieth option, the solid source chemical sublimator of option 29, wherein the headspace remains in fluid communication with the flow path during clogging of the filter.

[0107] In a thirty-first option, the solid source chemical sublimator of any one of options 1-30, wherein the housing is cylindrical.

[0108] In a thirty-second option, a solid source chemical sublimator includes: a housing having an interior space and an interior surface facing the interior space, the interior space configured to receive a chemical reactant therein; a filter frame having first and second ends, the filter frame configured to support a filter for suppressing the solid chemical reactant, the filter frame and filter configured to be disposed within the interior space; and one or more flow passages defined within an annulus defined between the filter frame and the interior surface of the housing, at least during placement of the filter frame within the housing.

[0109] In a thirty-third option, the solid source chemical sublimator of option 32 further comprising a filter, the filter configured to restrict passage of the chemical reactant therethrough.

[0110] In a thirty-fourth option, the solid source chemical sublimator of any one of options 32-33 further comprises a base configured to receive a chemical reactant thereon, the filter frame being secured onto the base.

[0111] In a thirty-fifth option, the solid source chemical sublimator of any one of options 33-34, wherein the filter void is configured to limit passage of the chemical reactant from the interior to the flow path to a transport rate that is not substantially greater than a rate of sublimation of the chemical reactant in the flow path by the carrier gas.

[0112] In a thirty-sixth option, the solid source chemical sublimator of any one of options 32-35, wherein the one or more flow channels are disposed around the outside of the filter frame.

[0113] In a thirty-seventh option, the solid source chemical sublimator of any one of options 32-36, wherein the one or more flow channels are circumferentially disposed around the filter frame, the inner surface of the housing, or both.

[0114] In a thirty-eighth option, the solid source chemical sublimator of any one of options 32-37, wherein the one or more flow channels are at least partially formed by a recess disposed within the housing.

[0115] In a thirty-ninth option, the solid source chemical sublimator of any one of options 32-38, wherein the one or more flow channels are at least partially formed by a recess disposed in the filter frame.

[0116] In a fortieth option, the solid source chemical sublimator of any one of options 32-39, wherein the pitch of at least one of the one or more flow channels is about zero.

[0117] In a forty-first option, the solid source chemical sublimator of any one of options 32-40, wherein the pitch of at least one of the one or more flow channels is greater than zero.

[0118] In a forty-second option, the solid source chemical sublimator of any one of options 32-41, wherein at least one of the one or more flow channels is a spiral.

[0119] In a 43rd option, the solid source chemical sublimator of any one of options 32-42, wherein the one or more fluid paths comprises a plurality of fluid paths, and the crossover path connects at least two consecutive fluid paths of the plurality of fluid paths.

[0120] In a forty-fourth option, the solid source chemical sublimator of option 43, wherein the transverse path is oriented substantially perpendicular to at least one of the two successive flow paths.

[0121] In a forty-fifth option, the solid source chemical sublimator of any one of options 32-44, wherein the filter cavity is configured to prevent reactants from passing therethrough at a first temperature and to allow reactants to pass therethrough at a second temperature.

[0122] In a 46th option, the solid source chemical sublimator of option 45, wherein the second temperature is greater than the first temperature.

[0123] In a 47th option, the solid source chemical sublimator of any one of options 32-46, wherein the second temperature is between 35°C and 200°C.

[0124] In a forty-eighth option, the solid source chemical sublimator of any one of options 32-47, wherein the filter comprises at least one of ceramic or metal.

[0125] In a forty-ninth option, the solid source chemical sublimator of any one of options 32-48, wherein the filter frame defines an aspect ratio of height to diameter of about 1-4.

[0126] In a fiftieth option, the solid source chemical sublimator of any one of options 32-49, wherein the filter frame has a height of about 25 cm to 120 cm.

[0127] In a 51st option, the solid source chemical sublimator of any one of options 32-50, wherein the filter frame has a diameter of about 20 cm to 50 cm.

[0128] In a 52nd option, the solid source chemical sublimator of any one of options 32-51, wherein the one or more flow channels are rings.

[0129] In a 53rd option, the solid source chemical sublimator of any one of options 32-52, wherein the one or more flow channels are configured to be in fluid communication with the base.

[0130] In a 54th option, the solid source chemical sublimator of any one of options 32-53, wherein the filter frame comprises a frame wall and a plurality of ridges formed thereon, the ridges defining at least a portion of the flow channels.

[0131] In a 55th option, a solid source chemical sublimator according to any one of options 32-54, wherein a plurality of ridges are formed on the exterior surface of the filter frame, the ridges defining at least a portion of the flow channels.

[0132] In a 56th option, the housing comprises a fluid inlet and a fluid outlet, each of the fluid inlet and the fluid outlet in fluid communication with one or more flow paths.

[0133] In a 57th option, the solid source chemical sublimator of any one of options 32-56 further comprising one or more heating elements disposed at least partially therein.

[0134] In a 58th option, the solid source chemical sublimator of option 57, wherein the one or more heating elements comprise a heating plate positioned in thermal contact with the base.

[0135] In a 59th option, the solid source chemical sublimator of any one of options 23-58, wherein the one or more heating elements comprise a heating rod.

[0136] In a sixtieth option, the solid source chemical sublimator of option 59, wherein the base comprises a receptacle configured for a heating rod to be inserted therein.

[0137] In a 61st option, the solid source chemical sublimator of any one of options 32-60, wherein the interior further comprises a headspace in fluid communication with the flow path, whereby the carrier gas can be saturated with the chemical reactant within the headspace and the flow path.

[0138] In a 62nd option, the solid source chemical sublimator of option 61, wherein the headspace remains in fluid communication with the flow path during clogging of the filter.

[0139] In a 63rd option, the solid source chemical sublimator of any one of options 32-62, wherein the housing is cylindrical.

[0140] In a 64th option, the filter insert comprises a filter frame having a first end and a second end, the filter frame at least partially defining an interior, and a filter having a void configured to restrict passage of a solid chemical reactant, the filter frame and filter configured to be contained within a housing, the filter being disposed between the interior and one or more channels defining a flow path between the filter frame and an interior surface of the housing.

[0141] In a 65th option, the filter insert of option 64, wherein the filter frame is cylindrical.

[0142] In a 66th option, the filter insert of any one of options 64-65, wherein the one or more channels are disposed around the outside of the filter frame.

[0143] In a 67th option, the filter insert of any one of options 64-66, wherein the one or more channels are circumferentially disposed around the filter frame.

[0144] In a 68th option, the filter insert of any one of options 64-67, wherein the pitch of at least one of the one or more channels is about zero.

[0145] In a 69th option, the filter insert of any one of options 64-68, wherein the pitch of at least one of the one or more channels is greater than zero.

[0146] In a 70th option, the filter insert of any one of options 64-69, wherein the one or more channels comprise a plurality of channels, and the transverse channel connects at least two consecutive recesses of the plurality of channels.

[0147] In a seventy-first option, the filter insert of option 70, wherein the transverse recess is oriented substantially perpendicular to at least one of the two consecutive channels.

[0148] In a 72nd option, the filter insert of any one of options 64-71, wherein the filter void is configured to prevent reactants from passing therethrough at a first temperature and to allow reactants to pass therethrough at a second temperature.

[0149] In a 73rd option, the filter insert of option 72, wherein the second temperature is higher than the first temperature.

[0150] In a 74th option, the filter insert of any one of options 38-73, wherein the second temperature is between 35°C and 200°C.

[0151] In a seventy-fifth option, the filter insert of any one of options 64-74, wherein the filter comprises at least one of ceramic or metal.

[0152] In a 76th option, the filter insert of any one of options 64-75, wherein the filter frame defines an aspect ratio of height to diameter of about 1-4.

[0153] In a 77th option, the filter insert of any one of options 64 to 76, wherein the filter frame has a height of about 25 cm to 120 cm.

[0154] In a 78th option, the filter insert of any one of options 64-77, wherein the filter frame has a diameter of about 20 cm to 50 cm.

[0155] In a 79th option, the filter insert of any one of options 64-78, wherein the one or more channels are rings.

[0156] In an 80th option, the filter insert of any one of options 64-79, wherein the one or more flow channels are configured to be in fluid communication with the base.

[0157] In an 81st option, the filter insert of any one of options 64-80, wherein the filter frame comprises a frame wall and a plurality of ridges formed thereon.

[0158] In an 82nd option, the filter insert of any one of options 64-81, wherein the filter frame includes at least one of a fluid inlet and a fluid outlet in fluid communication with the one or more recesses.

[0159] In an 83rd option, the filter insert of any one of options 64-82, wherein the channel comprises recesses and / or ridges.

[0160] In an 84th option, a filter insert according to any one of options 64 to 83, wherein the filter voids are configured to limit passage of the chemical reactant from the interior to the flow path to a transport rate that is not substantially greater than a sublimation rate of the chemical reactant in the flow path by the carrier gas.

[0161] In an 85th option, the filter insert of any one of options 64 to 84, wherein the one or more channels are formed in an interior surface of the housing.

[0162] In an 86th option, the filter insert of any one of options 64-85, wherein the one or more channels are formed in the filter frame.

[0163] In an 87th option, a deposition module comprises a solid source chemical sublimator according to any one of options 1-63 and a vapor phase reaction chamber for depositing material on a substrate, wherein the solid source chemical sublimator is configured to feed into the vapor phase reaction chamber.

[0164] In an 88th option, the deposition module of option 87 further comprises a control processor and software configured to operate the vapor phase reaction chamber to perform atomic layer deposition (ALD).

[0165] In an 89th option, the deposition module of option 87 further comprises a control processor and software configured to operate the vapor phase reaction chamber to perform chemical vapor deposition (CVD).

[0166] In a ninetieth option, a method of supplying a sublimated precursor in a deposition module includes: coupling a solid source chemical sublimator to supply a vapor-phase reaction chamber, the solid source chemical sublimator comprising a housing, a filter, and a flow path disposed between the housing and the filter, the flow path being in fluid communication with a chemical reactant of the solid source chemical sublimator, said coupling placing the flow path in fluid communication with the vapor-phase reaction chamber; heating the solid source chemical sublimator to an operating temperature, wherein the chemical reactant is heated and passes through the filter to the flow path; and flowing a carrier gas along the flow path, wherein the sublimated chemical reactant mixes with the carrier gas in the flow path.

[0167] In a 91st option, the method of option 90, wherein the solid source chemical sublimator comprises the solid source chemical sublimator of any one of options 1-63.

[0168] In a 92nd option, the method of any one of options 90-91, further comprising providing an amount of chemical reactant into a solid source chemical sublimator.

[0169] In a 93rd option, the method of any one of options 90-92, wherein the operating temperature is in the range of 50°C to 250°C.

[0170] In a 94th option, the method of any one of options 90-93, further comprising depositing the material on a substrate in a gas phase reaction chamber.

[0171] In a 95th option, the method of option 94, wherein depositing the material includes atomic layer deposition (ALD).

[0172] In a 96th option, the method of any one of options 90-95 further comprises setting the flow rate of the carrier gas such that the rate of sublimation of the chemical reactant by the carrier gas within the flow path is not substantially less than the rate of transport of the chemical reactant from the interior to the flow path.

[0173] In a 97th option, the method of option 96, wherein depositing the material includes chemical vapor deposition (CVD).

[0174] In a 98th option, the solid source chemical sublimator, filter insert, deposition module, or method according to any one of the preceding options, wherein the chemical reactant is selected from the group consisting of hafnium chloride, hafnium oxide, and zirconium dioxide.

[0175] In a ninety-ninth option, a solid source chemical sublimator includes a housing having a proximal portion and a distal portion, the housing having a housing axis extending along a length of the housing, the distal portion configured to hold a solid chemical reactant therein; a lid disposed on the proximal portion of the housing, the lid having a fluid inlet and a fluid outlet, the lid defining a serpentine flow path within the distal portion of the lid, the lid configured to allow gas to flow within the flow path, the housing axis being perpendicular to the plane of the lid; and a filter disposed between the serpentine flow path and the distal portion of the housing, the filter having a void configured to restrict passage of the solid chemical reactant therethrough.

[0176] In a 100th option, the solid source chemical sublimator of option 99, wherein the distal portion comprises a thermally conductive conduit disposed along the housing axis and two or more thermally conductive protrusions, the conductive protrusions being in thermal communication with the conductive conduit and being arranged radially around the conductive conduit, whereby the distal portion of the housing is configured to hold a solid chemical reactant with the conductive protrusions disposed therebetween, and the conductive conduit is configured to be arranged in conductive thermal communication with a heat source.

[0177] In a 101st option, the solid source chemical sublimator of option 100, wherein the two or more conductive protrusions comprise at least six conductive protrusions.

[0178] In a 102nd option, the solid source chemical sublimator of any one of options 99-101, wherein the housing is cylindrical and the filter is circular.

[0179] In option 103, the filter includes an inlet in fluid communication with the fluid inlet of the lid, the inlet of the filter configured to allow solid chemical reactant to pass therethrough into the housing.

[0180] In option 104, the solid source chemical sublimator of any one of options 99-103, wherein the distal opposing portion of the lid contacts the proximal surface of the filter and the proximal portion of the housing contacts the distal surface of the filter.

[0181] In a 105th option, the solid source chemical sublimator of any one of options 99-104, wherein the flow path comprises a plurality of flow paths, and the crossover path connects at least two consecutive flow paths of the plurality of flow paths.

[0182] In a 106th option, the solid source chemical sublimator of option 105, wherein the transverse path is oriented substantially perpendicular to at least one of the two continuous flow paths.

[0183] In a 107th option, the solid source chemical sublimator of any one of options 99-106, wherein the filter comprises at least one of ceramic or metal.

[0184] In a 108th option, the solid source chemical sublimator of any one of options 99-107, wherein the filter comprises a disk having an aspect ratio of thickness to diameter of about 25-1000.

[0185] In a 109th option, the solid source chemical sublimator of any one of options 99-108, wherein the filter has a diameter of about 20 cm to 50 cm.

[0186] In a 110th option, the solid source chemical sublimator of any one of options 99-109, wherein the fluid inlet and fluid outlet are each in fluid communication with the flow path.

[0187] In option 111, the solid source chemical sublimator of any one of options 100-110, wherein the two or more conductive protrusions are in thermal communication with a distal portion of the housing.

[0188] In option 112, the solid source chemical sublimator of option 111, wherein the one or more heating elements comprise a heating plate disposed in thermal contact with the housing.

[0189] In a 113th option, the solid source chemical sublimator of any one of options 111-112, wherein the one or more heating elements are selected from the group consisting of a heating rod and a heating plate, or a combination thereof.

[0190] In a 114th option, the solid source chemical sublimator of option 113, wherein the housing comprises a receptacle configured for a heating rod to be inserted therein.

[0191] In option 115, the solid source chemical sublimator of option 114, wherein the receptacle is generally longitudinal and configured such that a majority of the housing axial length extends axially.

[0192] In a 116th option, the proximal portion of the housing further comprises a headspace in fluid communication with the flow path, whereby the carrier gas can be saturated with the chemical reactant within the headspace and the flow path. A solid source chemical sublimator as described in any one of options 99-115.

[0193] In a 117th option, the headspace remains in fluid communication with the flow path without passing through the filter, thereby allowing the headspace to remain in fluid communication with the flow path during clogging of the filter.

[0194] In a 118th option, the solid source chemical sublimator of any one of options 99-117, wherein the inlet, outlet, or both, are provided with corresponding valves configured to allow fluid to pass therethrough.

[0195] In a 119th option, the solid source chemical sublimator of any one of options 99-118, wherein the inlet, the outlet, or both, are equipped with corresponding filters configured to restrict the flow of particulates therethrough.

[0196] In a 120th option, the solid source chemical sublimator of any one of options 99-119, wherein the surface of the lid comprises a channel and the surface is circular.

[0197] In a 121st option, the solid source chemical sublimator of any one of options 99-120, wherein the sublimator has an aspect ratio of axial length to diameter between about 20 and 0.5.

[0198] In a 122nd option, the solid source chemical sublimator of any one of options 100-121, wherein two or more conductive protrusions extend from a distal portion of the housing.

[0199] In a 123rd option, the solid source chemical sublimator of option 122, wherein the two or more conductive protrusions are radially spaced apart from the housing axis.

[0200] In a 124th option, the solid source chemical sublimator of any one of options 122-123, wherein the two or more conductive protrusions extend radially from the distal portion of the housing.

[0201] In a 125th option, the solid source chemical sublimator of any one of options 122-124, wherein the two or more conductive protrusions comprise at least three protrusions radially spaced apart from one another.

[0202] In a 126th option, the solid source chemical sublimator of any one of options 99-125 further comprises a resonator disposed in a distal portion of the housing, the resonator comprising extensions disposed radially about the housing axis, the resonator configured to agitate the solid chemical reactant within the housing.

[0203] In a 127th option, the solid source chemical sublimator of any one of options 99-126, wherein the flow path comprises a plurality of anti-parallel segments in a plane.

[0204] In a 128th option, the solid source chemical sublimator of any one of options 1-127, wherein the filter is disposed between the fluid outlet and the distal portion of the housing.

[0205] In a 129th option, the filter covers a majority of the flow path, the solid source chemical sublimator of any one of options 1-128.

[0206] In a 130th option, a method of sublimating a solid precursor using the solid source chemical sublimator of any one of options 99-129.

[0207] Other Considerations In the foregoing specification, the invention has been described with reference to specific embodiments thereof. It will, however, be apparent that various modifications and changes can be made thereto without departing from the broader spirit and scope of the invention. The specification and drawings are, therefore, to be regarded in an illustrative rather than a restrictive sense.

[0208] Indeed, it will be understood that the systems and methods of the present disclosure each have several innovative aspects, no single aspect of which is solely responsible for or required for the desirable attributes disclosed herein. The various features and processes described above can be used independently of one another or can be combined in various ways. All possible combinations and subcombinations are intended to be within the scope of the present disclosure.

[0209] Certain features described in this specification in the context of separate embodiments may also be implemented in combination in a single embodiment. Conversely, various features described in the context of a single embodiment may also be implemented in multiple embodiments separately or in any suitable subcombination. Furthermore, while features may be described above as functioning in a particular combination and initially claimed as such, one or more features from the claimed combination may optionally be deleted from the combination, and the claimed combination may be directed to a subcombination or a variation of the subcombination. No single feature or group of features is necessary or essential to every embodiment.

[0210] It will be understood that conditional language used herein, such as, among others, "can," "could," "might," "may," "for example," and the like, is generally intended to convey that certain embodiments include certain features, elements, and / or steps, but other embodiments do not, unless otherwise indicated or understood within the context of use. Thus, such conditional language may not necessarily imply that a feature, element, and / or step is somehow required in one or more embodiments, or Reference to one or more embodiments is not generally intended to imply that logic for determining whether those features, elements, and / or steps are included or performed in any particular embodiment, whether or not input or direction from the author is provided. The terms "comprise," "include," "have," and the like are synonymous and are used in an inclusive, open-ended manner and do not exclude additional elements, features, steps, operations, etc. Additionally, the term "or" is used in an inclusive sense (and not an exclusive sense), so that, for example, when used to connect a list of elements, the term "or" may refer to one, some, or all of the elements in the list. Furthermore, the articles "a," "an," and "the," as used in this application and the appended claims, should be interpreted to mean "one or more" or "at least one" unless otherwise specified. Similarly, while operations may be depicted in the figures in a particular order, it should be recognized that such operations need not be performed in the particular order or sequential order shown, or that all illustrated operations be performed to achieve a desired result. Furthermore, the figures may schematically illustrate another example process in the form of a flowchart. However, other operations not shown may be incorporated into the exemplary methods and processes generally illustrated. For example, one or more additional operations may be performed before, after, simultaneously with, or between any of the illustrated operations. Furthermore, in alternative embodiments, operations may be rearranged or reordered. In certain situations, multitasking and parallel processing may be advantageous. Furthermore, the separation of various system components in the above embodiments should not be understood as requiring such separation in all embodiments, and it will be understood that the described components and systems may generally be integrated together in a single product or packaged into multiple products (e.g., a filter insert with a housing and a base and an ingredient container). Furthermore, other embodiments are within the scope of the following claims. In some cases, the steps recited in the claims may be performed in a different order to achieve still more desirable results.

[0211] Thus, the scope of the claims is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with this disclosure and the principles and features disclosed herein. For example, while many examples within this disclosure are provided with respect to providing vapor from a solid source for delivery to a deposition chamber for semiconductor manufacturing, the specific embodiments described herein can be implemented in a wide variety of other applications and / or in numerous other contexts.

Claims

1. 1. A solid source chemical sublimator comprising: a housing having a proximal portion and a distal portion, the housing having a housing axis extending along a length of the housing, the distal portion configured to hold a solid chemical reactant therein; a lid disposed on the proximal portion of the housing, the lid including a fluid inlet and a fluid outlet, the lid defining a serpentine flow path within a distal portion of the lid, the lid configured to allow gas to flow within the flow path, and the housing axis being perpendicular to the plane of the lid; a filter disposed between the serpentine flow path and the distal portion of the housing, the filter having voids configured to restrict passage of a solid chemical reactant therethrough.

2. The distal portion a thermally conductive conduit along the housing axis; two or more thermally conductive protrusions, the conductive protrusions being in thermal communication with the conductive conduit and radially disposed around the conductive conduit, such that the distal portion of the housing is configured to hold a solid chemical reactant with the conductive protrusions disposed therebetween; 10. The solid source chemical sublimator of claim 1, wherein the conductive conduit is configured to be placed in conductive thermal communication with a heat source.

3. 3. The solid source chemical sublimator of claim 2, wherein the two or more conductive protrusions comprise at least six conductive protrusions.

4. 10. The solid source chemical sublimator of claim 1, wherein said housing is cylindrical and said filter is circular.

5. 10. The solid source chemical sublimator of claim 1, wherein the filter comprises an inlet in fluid communication with a fluid inlet in the lid, the inlet in the filter configured to allow solid chemical reactants to pass therethrough into the housing.

6. 10. The solid source chemical sublimator of claim 1, wherein a distal opposing portion of said lid contacts a proximal face of said filter and said proximal portion of said housing contacts a distal surface of said filter.

7. 10. The solid source chemical sublimator of claim 1, wherein the filter comprises at least one of a ceramic or a metal.

8. 10. The solid source chemical sublimator of claim 1, wherein said filter comprises a disk having an aspect ratio of thickness to diameter of about 25-1000.

9. 10. The solid source chemical sublimator of claim 1, wherein said fluid inlet and fluid outlet are each in fluid communication with said flow path.

10. 3. The solid source chemical sublimator of claim 2, wherein said two or more conductive protrusions are in thermal communication with said distal portion of said housing.

11. 11. The solid source chemical sublimator of claim 10, wherein one or more heating elements comprise a heating plate disposed in thermal contact with said housing.

12. 10. The solid source chemical sublimator of claim 1, wherein the inlet, the outlet, or both, are provided with corresponding valves configured to allow fluid to pass therethrough.

13. 10. The solid source chemical sublimator of claim 1, wherein the inlet, the outlet, or both, are provided with corresponding filters configured to restrict the flow of particulates therethrough.

14. 10. The solid source chemical sublimator of claim 1, wherein a surface of said lid comprises said flow channel, said surface being circular.

15. 3. The solid source chemical sublimator of claim 2, wherein said two or more conductive protrusions extend from said distal portion of said housing.

16. 16. The solid source chemical sublimator of claim 15, wherein said two or more conductive protrusions are radially spaced apart from said housing axis.

17. 16. The solid source chemical sublimator of claim 15, wherein the two or more conductive protrusions extend axially from the distal portion of the housing.

18. 10. The solid source chemical sublimator of claim 1, further comprising a resonator disposed in the distal portion of the housing, the resonator comprising extensions disposed radially about the housing axis, the resonator configured to agitate solid chemical reactants within the housing.

19. 10. The solid source chemical sublimator of claim 1, wherein the flow path comprises a plurality of anti-parallel segments in a plane.

20. 10. The solid source chemical sublimator of claim 1, wherein the filter is disposed between the fluid outlet and the distal portion of the housing.

Images