Deposition mask made of metal for OLED pixel deposition and method for manufacturing deposition mask

Abstract

To provide a deposition mask having a uniform pore diameter by controlling a size deviation of a large pore diameter and a size deviation of an island.SOLUTION: A deposition mask according to an embodiment comprises a metal plate comprising a deposition area including a through hole and a non-deposition area. The through-hole comprises small surface holes formed on one surface; large surface holes formed on the other surface; and a communication portion for communicating the holes, where the communication portion has an elliptical shape, the large surface hole includes a first large surface hole connected to a first communication portion in which one surface of the metal plate in a transverse-axis direction and the first diameter are inclined at an acute angle; and a second large surface hole connected to a second communication portion in which one surface in the transverse-axis direction and the first diameter are inclined at an obtuse angle, the first large surface hole and the second large surface hole are alternately disposed in a row in a longitudinal-axis direction and the transverse-axis direction of the metal plate, a first island portion is arranged between two adjacent first large surface holes in a first diagonal direction joining the second diameters of the first communicating portions connected to the first large surface holes, and a second island portion is arranged between two adjacent second large surface holes in a second diagonal direction joining the first diameters of the second communicating portions connected to the second large surface holes.SELECTED DRAWING: Figure 8

Description

[Technical Field]

[0001] In this example, a deposition mask having elliptical through-holes arranged in a zigzag pattern is used. This is intended to improve performance. [Background technology]

[0002] Display devices are used in a variety of devices. It is used not only on small devices such as smartphones and tablet PCs, but also on TVs, monitors, public It is applied to large devices such as public displays (PDs). In particular, recently, the number of pixels per inch (PPI) and above has increased. Demand for ultra-high resolution UHD (Ultra High Definition) The need for high-resolution displays is increasing, and they are being applied to small and large devices. This has led to increased interest in technologies that enable low power consumption and high resolution.

[0003] The commonly used display devices are divided into LCD (Liquid Crystal Display) and LCD (Liquid Crystal Display). Crystal Display) and OLED (Organic Light Emitting ng Diode).

[0004] LCD is a display device driven by liquid crystal. Below the liquid crystal, CCFL (Cold Cathode Fluorescent t Lamp) or LED (Light Emitting Diode), etc. The light source is disposed on the structure, and the light source emits light using the liquid crystal disposed on the light source. It is a display device that is driven by adjusting the amount of light emitted.

[0005] OLED is a display device driven by organic materials and does not require a separate light source. The organic material itself acts as a light source, allowing it to be driven with low power. It can express a wide range of brightness and darkness, and has a response speed that is approximately 1,000 times faster than LCD. It has been attracting attention as a display device that can replace LCD due to its excellent viewing angle.

[0006] In particular, the organic material contained in the light-emitting layer of an OLED is a fine metal mask (FM The film is evaporated onto the substrate using a deposition mask called a Fine Metal Mask (FMM). The deposited organic material has a pattern corresponding to the pattern formed on the deposition mask. The deposition mask is generally made of iron (F It is made of Invar alloy metal plate containing nickel (Ni). At this time, through holes are formed on one surface and the other surface of the metal plate, penetrating the one surface and the other surface. The through holes may be formed at positions corresponding to the pixel patterns. Organic substances such as green, green, and blue fill the through holes of the metal plate. The light can be passed through and deposited on a substrate, whereby a pixel pattern can be formed.

[0007] When the deposition mask has circular through-holes, uniform through-holes can be formed. This allows for the formation of a uniform deposition pattern.

[0008] On the other hand, when elliptical through-holes are arranged in a zigzag pattern, the deposition pattern varies depending on the direction. There is a problem that the size of

[0009] Therefore, even if the elliptical through-holes are arranged in a zigzag pattern, the through-holes can be Therefore, a deposition mask having a new structure and a manufacturing method thereof that can improve the uniformity of deposition is required. Summary of the Invention [Problem to be solved by the invention]

[0010] In the example, the size deviation of the large hole diameter of the deposition mask and the size deviation of the island are controlled. The present invention aims to provide a deposition mask that ensures uniform hole diameters. [Means for solving the problem]

[0011] The deposition mask according to the embodiment includes a metal plate having a deposition region and a non-deposition region. The region includes a plurality of effective regions forming a deposition pattern and separation regions between the plurality of effective regions. The plurality of effective areas include a plurality of through holes, and the plurality of through holes are formed on one surface. a plurality of small surface holes formed on the other surface opposite to the one surface; and a plurality of large surface holes formed on the small surface. a communicating portion that communicates the surface hole and the large surface hole, and the communicating portion has a first diameter and a second diameter and the through hole has an elliptical shape having a second diameter different from the size of the through hole in the horizontal axis direction of the metal plate. a communication portion connecting the first surface of the first large surface hole and the first diameter of the first large surface hole inclined at an acute angle; and a deposition mask. a communicating portion connected to one surface in the horizontal axis direction of the first diameter and a second large surface hole inclined at an obtuse angle; The first large surface holes and the second large surface holes are alternately arranged in a row in the longitudinal axis direction of the metal plate. The first large surface holes and the second large surface holes are alternately arranged in a row in the horizontal axis direction of the metal plate. The first large surface hole is connected to the first large surface hole in a first diagonal direction connecting the first diameter of the communicating portion. A first island portion is disposed between the two first large surface holes and connected to the second large surface hole. In a second diagonal direction connecting the first diameter of the communication portion, a second large surface hole is formed between two adjacent second large surface holes. An island portion is disposed, and a relay is provided between the first island portion and the second island portion. The size deviation between the first island portion and the second island portion adjacent to each other is , less than 30%. [Effects of the Invention]

[0012] The deposition mask according to the embodiment can improve the uniformity of the hole diameter of the deposition mask. .

[0013] In detail, the deposition mask according to the embodiment has through holes including elliptical through portions arranged in a zigzag pattern. Even if the hole is placed in a different direction, the uniformity of the large and small through holes is improved. can.

[0014] That is, the deposition mask according to the embodiment has through-hole shapes in the horizontal axis direction, the vertical axis direction, and the diagonal direction. The uniformity of the shape can be improved.

[0015] As a result, the deposition mask according to the embodiment can improve the quality of the deposition pattern. Cut. [Brief explanation of the drawings]

[0016] [Figure 1] 1 is a perspective view illustrating an organic material deposition apparatus including a deposition mask according to an embodiment. [Figure 2] 1 is a cross-sectional view showing an organic material deposition apparatus including a deposition mask according to an embodiment. [Figure 3] 10A and 10B are diagrams illustrating the deposition mask according to the embodiment being pulled in order to be mounted on a mask frame. [Figure 4] FIG. 10 is a diagram showing a plurality of deposition patterns formed on a substrate 300 via a plurality of through-holes in a deposition mask. [Figure 5]FIG. 1 is a plan view of an evaporation mask according to an embodiment. [Figure 6] FIG. 10 is a plan view of an effective portion of an evaporation mask according to a comparative example. [Figure 7] 10 is a photograph of an effective portion of an evaporation mask according to a comparative example. [Figure 8] FIG. 2 is a plan view of an effective portion of an evaporation mask according to an embodiment. [Figure 9] 1 is a photograph of an effective portion of an evaporation mask according to an example. [Figure 10] 9 is a diagram showing the cross sections taken along the AA' direction and the BB' direction in FIG. 8 superimposed on each other to explain the difference in height and size between the two cross sections. [Figure 11] 10A to 10C are diagrams illustrating a process of forming large holes in an evaporation mask according to a comparative example. [Figure 12] 1A to 1C are diagrams illustrating a process for forming large holes in an evaporation mask according to an embodiment. [Figure 13] FIG. 10 is a diagram showing the size of a vapor deposition pattern in the diagonal direction in a comparative example. [Figure 14] FIG. 10 is a diagram showing the size of a vapor deposition pattern in the diagonal direction in an example. [Figure 15] 1A and 1B are diagrams showing deposition patterns formed through a deposition mask according to an example. [Figure 16] 1A and 1B are diagrams showing deposition patterns formed through a deposition mask according to an example. MODE FOR CARRYING OUT THE INVENTION

[0017] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The technical concept of the present invention is not limited to some of the embodiments described, and may be modified to include various embodiments. The present invention may be realized in various forms, and the components of the embodiments may be interchangeable within the scope of the technical concept of the present invention. One or more of these may be selectively combined or substituted for each other. Terms used (including technical and scientific terms) must be clearly and specifically defined and described. Unless otherwise specified, the present invention will be described in accordance with the principles of the present invention. Commonly used terms that can be interpreted as meanings and are predefined terms may interpret its meaning in light of the contextual meaning of the relevant art.

[0018] Furthermore, the terms used in the examples of the present invention are intended to explain the examples, and In this specification, the singular forms "a," "the," and "the" are used unless the phrase specifically states otherwise. It can also include plural forms, and it means "A and (and) at least one of B and C (or one of them)". In the case of "A, B, C", one or more of all possible combinations that can be combined with A, B, and C may include:

[0019] In addition, in describing the components of the present invention, first, second, A, B, (a), (b) Such terms distinguish the component from other components. The terms are merely used to distinguish between the elements, and do not affect the essence, order, or sequence of the elements. Not limited.

[0020] It is also noted that a component is "coupled," "connected," or "connected" to another component. When mounted, the component is not directly connected, coupled, or connected to any other component. Not only when the component is connected to another component, but also when the component is connected to another component. This also includes cases where the two are "connected," "coupled," or "connected."

[0021] It is also noted that each component is formed or placed "above or below" the other. When mounted on top or bottom, the two components are in direct contact with each other. Not only when the two components are connected to each other, but also when one or more other components are formed or placed between the two components. This also includes cases where

[0022] Also, when expressed as "upper" or "lower," it is based on one component. It can also mean a downward direction, not just a direction.

[0023] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, evaporation masks according to the embodiments will be described with reference to the drawings.

[0024] 1 to 4 show deposition of an organic substance onto a substrate 300 using a deposition mask 100 according to the embodiment. 1 is a conceptual diagram for explaining a process of vapor-depositing a material.

[0025] FIG. 1 is a perspective view showing an organic material deposition apparatus including a deposition mask according to an embodiment of the present invention. 2 is a cross-sectional view showing an organic material vapor deposition apparatus including a vapor deposition mask 100 according to an embodiment; FIG. 3 shows a mask frame 200 for mounting the deposition mask 100 according to the embodiment on the mask frame 200. 4 is a diagram showing the state where the mask 100 is pulled. 10 is a diagram showing a plurality of deposition patterns formed on the substrate 300 through the deposition.

[0026] 1 to 4, the organic material deposition apparatus includes a deposition mask 100, a mask frame 102, a The apparatus may include a frame 200, a substrate 300, an organic material deposition vessel 400, and a vacuum chamber 500. Cut.

[0027] The deposition mask 100 may include a metal. For example, the deposition mask may include It may contain iron (Fe) and nickel (Ni).

[0028] The deposition mask 100 may include a plurality of through holes TH in an effective area for deposition. The deposition mask 100 may be a deposition mask substrate including a plurality of through holes TH. In this case, the through holes may be formed to correspond to a pattern formed on the substrate. The deposition mask 100 may include an ineffective portion other than an effective portion including a deposition region. .

[0029] The mask frame 200 may include an opening 205. The plurality of through holes 00 are arranged on the area corresponding to the opening 205 of the mask frame 200. In this way, the organic material supplied to the organic material deposition chamber 400 is deposited on the substrate 3. The deposition mask 100 is placed on the mask frame 200. For example, the deposition mask 100 can be pulled with a certain tension, and the It can be fixed onto the mask frame 200 by welding.

[0030] That is, the mask frame 200 is made up of a plurality of frames 20 surrounding the opening 205. Includes 1, 202, 203, and 204.

[0031] The deposition mask 100 has an outermost edge portion. The deposition mask 100 can be pulled in the opposite direction. 0 in the longitudinal direction (horizontal axis direction), one end of the deposition mask 100 and the opposite end The other ends can be pulled in opposite directions.

[0032] The substrate 300 may be a substrate used in manufacturing a display device. 00 can be a substrate 300 for depositing organic materials for the OLED pixel pattern. On the substrate 300, red, green, and red electrodes are formed to form pixels of the three primary colors of light. Green and blue organic patterns can be formed. An RGB pattern can be formed on the substrate 300 .

[0033] The organic material deposition vessel 400 may be a crucible. The organic material deposition vessel 400 can be moved within the vacuum chamber 500. Cut.

[0034] In the vacuum chamber 500, a heat source and / or a crucible, which is the organic material evaporation vessel 400, is provided. By applying an electric current, the organic material can be deposited onto the substrate 100 .

[0035] Referring to FIG. 4, the deposition mask 100 has one side 101 and the opposite side 102. The other surface 102 may be included.

[0036] The deposition mask 100 has a surface 101 including a small hole V1, and a second surface 102 including a large hole V2. For example, the deposition mask 100 may have a hole V2 on one side 101 and a hole V3 on the other side 102. Each of the two may include a plurality of small-surface holes V1 and a plurality of large-surface holes V2.

[0037] The deposition mask 100 may include a through hole TH. The small surface hole V1 and the large surface hole V2 may be connected by a connecting portion CA at their boundaries. do.

[0038] The deposition mask 100 may also include a first inner surface ES1 within the small surface hole V1. The deposition mask 100 may include a second inner surface ES2 in the large hole V2. The through hole TH has a first inner surface ES1 in the small surface hole V1 and a second inner surface ES2 in the large surface hole V2. For example, the first inner surface ES2 in one facet hole V1 may be formed in communication with the first inner surface ES2. The inner surface ES1 communicates with the second inner surface ES2 in one large surface hole V2 to form one through hole. As a result, the number of the through holes TH can be determined by dividing the number of the small surface holes V1 and the large surface holes V2 by the number of the through holes TH. It may correspond to the number of V2.

[0039] The width of the large surface hole V2 may be larger than the width of the small surface hole V1. The width of the small-surface hole V1 is measured on one surface 101 of the deposition mask 100, and the width of the large-surface hole V2 is The width can be measured on the other side 102 of the deposition mask 100 .

[0040] The facet hole V1 may be disposed toward the substrate 300. The facet holes V1 may be located close to the substrate 300. This allows the deposition material, i.e., the vapor It can have a shape corresponding to the landing pattern DP.

[0041] The large surface hole V2 may be disposed toward the organic material deposition chamber 400. The large-surface hole V2 accommodates the organic material supplied from the organic material deposition chamber 400 in a wide width. The substrate 300 can be inserted through the small surface hole V1, which has a width smaller than that of the large surface hole V2. Therefore, fine patterns can be formed quickly on the substrate.

[0042] FIG. 5 is a plan view of an evaporation mask 100 according to an embodiment. The deposition mask 100 will now be described in more detail.

[0043] Referring to FIG. 5, the deposition mask 100 according to the embodiment has a deposition area DA and a non-deposition area DA. May include an NDA.

[0044] The deposition zone DA may be a zone for forming a deposition pattern. A can include patterned and non-patterned areas. The patterned areas are The non-patterned area may be a region including a hole V1, a large surface hole V2, a through hole TH, and an island portion IS. The turn region does not include the small surface hole V1, the large surface hole V2, the through hole TH, and the island portion IS. It can be a region.

[0045] Furthermore, one deposition mask 100 can include a plurality of deposition regions DA. For example, In the embodiment, the deposition area DA includes a plurality of effective areas AA1 where a plurality of deposition patterns can be formed. May contain AA2, AA3.

[0046] The deposition area DA is divided into a plurality of isolation areas IA1, I1 included in one deposition mask 100. A2 may be included. Separation regions IA1 and IA2 may be disposed between adjacent effective portions. That is, the adjacent effective areas are distinguished from each other by the separation areas IA1 and IA2. One deposition mask 100 can support multiple effective areas.

[0047] The deposition mask 100 has non-deposition areas NDA on both sides of the deposition area DA in the longitudinal direction. The deposition mask 100 according to the embodiment may include a deposition area DA in the horizontal direction. The non-deposited areas NDA may be included on both sides of the substrate.

[0048] The non-deposition area NDA fixes the deposition mask 100 to the mask frame 200. The frame fixing areas FA1 and FA2, the half-etched areas HF1 and HF2, and the It may include a punch portion.

[0049] The non-deposition area NDA can include half-etched portions HF1 and HF2. For example, the non-deposition area NDA of the deposition mask 100 is provided on one side of the deposition area DA. The deposition area DA may include a half-etched portion HF1. The first half-etched portion HF2 may be formed on the other side of the first half-etched portion HF1. The portion HF1 and the second half-etched portion HF2 are formed by grooves in the depth direction of the deposition mask 100. The first half-etched portion HF1 and the second half-etched portion HF2 may be formed in the region. The etching portion HF2 can have a groove about half the depth of the deposition mask. This allows stress to be dispersed when the mask 100 is tensioned.

[0050] The deposition mask 100 according to the embodiment may include a plurality of half-etched portions. In detail, the deposition mask 100 according to the embodiment is half-etched only in the non-deposition area NDA. However, the deposition area DA and the front At least one of the non-deposited areas NDA further includes a plurality of half-etched portions. This allows the stress of the deposition mask 100 to be uniformly distributed. Cut.

[0051] The non-deposition area NDA fixes the deposition mask 100 to the mask frame 200. The frame may include frame fixed areas FA1 and FA2 for

[0052] The frame fixing areas FA1 and FA2 are formed by half-etching the non-deposition area NDA. HF1, HF2 and the deposition area DA adjacent to the half-etched portions HF1, HF2. For example, the first frame fixing area FA1 is located between the non-deposition area The first half-etched portion HF1 of the region NDA and the portion adjacent to the first half-etched portion HF1 For example, the second frame may be fixed to the first effective portion AA1 of the deposition area DA. The fixed area FA2 is formed by the second half-etched portion HF2 of the non-deposition area NDA and the second half The third effective portion AA3 of the deposition area DA is disposed between the etching portion HF2 and the adjacent etching portion HF3. This makes it possible to fix a plurality of vapor deposition pattern portions simultaneously.

[0053] The deposition mask 100 also includes semicircular openings at both ends in the horizontal direction X. For example, the non-deposited area (NDA) may include an open portion.

[0054] Although not shown in the drawing, the half-etched portion is an ineffective portion of the deposition area DA. The half-etched portion may be formed on the UA when the deposition mask 100 is pulled. In order to distribute stress, a plurality of such portions may be disposed in a distributed manner over the entire or part of the ineffective portion UA.

[0055] The half-etched portions HF1 and HF2 are located in the frame fixing areas FA1 and FA2 and / or Alternatively, it may be formed in the peripheral areas of the frame fixing areas FA1 and FA2. When the deposition mask 100 is fixed to the mask frame 200, and / or when the deposition mask 100 is fixed to the mask frame 200, The stress of the deposition mask 100 that occurs when depositing a deposition material after the mask is fixed to the frame is This allows the deposition mask 100 to have uniform through-holes. It can be maintained so that

[0056] The deposition mask 100 has a plurality of effective portions AA1, AA2, and AA3 spaced apart in the longitudinal direction. In particular, the deposition area DA may include a non-effective area UA other than the effective area. , including a plurality of valid parts AA1, AA2, AA3 and an invalid part UA other than the valid part AA. can.

[0057] The effective portions AA1, AA2, and AA3 were formed on one surface of the deposition mask 100. A plurality of small surface holes V1 and a plurality of large surface holes V2 formed on the other surface opposite to the one surface, The through hole TH is formed by a communicating portion CA where the boundaries of the small surface hole V1 and the large surface hole V2 are connected. and

[0058] The effective portions AA1, AA2, and AA3 are used to support the through holes TH. The land portion IS may be included.

[0059] The island portion IS may be located between adjacent through holes TH among the plurality of through holes TH. That is, in the effective portions AA1, AA2, and AA3 of the deposition mask 100, the through-holes TH are not included. The region may be an island IS.

[0060] The island portion IS is formed by etching on one surface 101 or the other surface 102 of the effective portion of the deposition mask. Specifically, the island portion IS can be defined as The other surface 102 of the mask 100 has the large hole V2 formed therein, and the through hole TH is formed therein. The island may be an unetched area between the through-holes TH. The groove portion IS can be arranged parallel to the other surface 102 of the deposition mask 100. The upper surface of the island portion IS may be disposed parallel to the other surface 102 .

[0061] The island portion IS is disposed on the same plane as the other surface 102 of the deposition mask 100. As a result, the island portion IS is formed on the other surface 102 of the deposition mask 100. The island portion IS may have the same thickness as at least a part of the effective portion. , and the non-effective portion of the other surface 102 of the deposition mask 100 that is not etched. Therefore, the deposition mask 100 can be used to deposit the sub-pixels. This can improve the uniformity of application.

[0062] The island portion IS is formed on a plane parallel to the other surface 102 of the deposition mask 100. Here, the parallel planes are the planes that are parallel to each other in the etching process around the island portion IS. Therefore, the other surface of the deposition mask 100 on which the island portion IS is arranged and the non-edge portion of the non-effective portion are The height difference between the other surface of the deposition mask 100 and the other surface of the mask is ±1 μm or less. This can be done.

[0063] The island portion IS has a width W1 in the longitudinal direction and a width W2 in the horizontal direction that are different from each other. That is, the island portion IS has a width in the longitudinal direction that is larger than the width in the horizontal direction. More specifically, the island portion IS may be formed in a longitudinal direction of the deposition mask. The width parallel to the width direction of the deposition mask may be larger than the width parallel to the width direction of the deposition mask.

[0064] The deposition mask 100 is a non-transparent mask disposed on the outer periphery of the effective portions AA1, AA2, and AA3. The effective portion AA may include a plurality of through holes in which an organic material is deposited. The inner region may be an inner region when the outer periphery of the through hole located at the outermost periphery is connected. The effective portion UA ​​is the outermost through-hole for depositing organic material among the plurality of through-holes. It may be the outer region when the outer shells are connected.

[0065] The non-effective portion UA ​​is an area of ​​the deposition area DA excluding the effective portions AA1, AA2, and AA3. and the non-deposited area NDA. The non-effective portion UA ​​is the effective portions AA1, AA2, AA3. The outer regions OA1, OA2, and OA3 may be included to surround the outer periphery of the object.

[0066] The number of the outer areas OA1, OA2, and OA3 is the number of the effective areas AA1, AA2, and AA3. That is, one effective part can correspond to the number of the effective parts in the horizontal and vertical directions from the tip of the effective part. Each of the regions may include one outer region at a fixed distance from the other.

[0067] The first effective portion AA1 may be included in a first outer area OA1. The first effective portion A may include a plurality of through holes TH for forming a deposition material. The first outer area OA1 surrounding the outer periphery of A1 may include a plurality of through holes.

[0068] For example, the plurality of through holes included in the first outer area OA1 are This is to reduce the etching defects of the through holes TH located on the outermost periphery. The deposition mask 100 according to the embodiment has a plurality of effective portions AA1, AA2, and AA3. The uniformity of the through holes can be improved, and the quality of the deposition pattern produced thereby can be improved. can be improved.

[0069] The shape of the through hole TH of the first effective portion AA1 is the same as that of the through hole T of the first outer area OA1. Therefore, the through holes TH included in the first effective portion AA1 may correspond to the shape of the through holes TH. As an example, the through holes TH of the first effective portion AA1 can be The shape of the through hole in the first outer area OA1 may be circular. The through holes TH may have various patterns such as a diamond pattern and an elliptical pattern. It may be a shape.

[0070] The second effective portion AA2 may be included in a second outer area OA2. The second outer area OA2 may have a shape corresponding to the first effective portion AA1. , and the first outer area OA1 may have a shape corresponding to each other.

[0071] The second outer area OA2 is formed by horizontally extending from the through-hole located at the outermost edge of the second effective portion AA2. For example, the second through-hole may further include two through-holes in the first and second directions, respectively. The outer area OA2 is located at the upper and lower positions of the through-holes located at the outermost periphery of the second effective portion AA2. For example, two through holes may be arranged in a horizontal line in each of the second outer regions. OA2 are two through holes on the left and right sides of the outermost through hole of the second effective portion AA2. The plurality of through holes included in the second outer area OA2 may be arranged in a vertical line. The through holes are provided to reduce etching defects at the outermost periphery of the effective area. As a result, the deposition mask according to the embodiment has a uniform thickness of the plurality of through holes located in the effective portion. This can improve the quality of the deposition pattern produced. This can be done.

[0072] The third effective portion AA3 may be included in a third outer area OA3. The third effective portion AA3 may include a plurality of through holes for forming a deposition material. The third outer area OA3 surrounding the outer periphery of the first electrode 10 may include a plurality of through holes.

[0073] The third effective portion AA3 may have a shape corresponding to that of the first effective portion AA1. The third outer area OA3 may have a shape corresponding to that of the first outer area OA1.

[0074] In addition, the through holes TH included in the effective portions AA1, AA2, and AA3 are For example, the effective The through holes included in the portions AA1, AA2, and AA3 are located at the edge portions of the non-effective portion UA. The through-holes may have different shapes. The difference in stress due to the

[0075] The structural features of the deposition mask according to the embodiment will be described with reference to a comparison of FIGS.

[0076] 6 and 7 are plan views of an effective portion of an evaporation mask 100 according to a comparative example.

[0077] When the through-holes in the deposition mask have a symmetrical shape, the island portion tends to be highly uniform. For example, a deposition mask with circular through-holes has uniformity regardless of the direction. Therefore, the size of the island can be uniform. The resulting deposition pattern may be highly uniform and of high quality.

[0078] On the other hand, when the through-holes of the deposition mask have an asymmetric shape as in the comparative examples of FIGS. 6 and 7, However, there is a problem in that the uniformity of the island size decreases. This means that the elliptical through-holes are arranged in the first pair in a different direction from the horizontal and vertical axes of the deposition mask. The diagonal direction may refer to a second diagonal direction that is different from the first diagonal direction. That is, in the comparative deposition mask, the plurality of elliptical through holes are oriented so as to cross the maximum diameter. The direction in which the mask is formed may be a first diagonal direction different from the horizontal and vertical axis directions of the deposition mask. The direction across the maximum diameter of the plurality of elliptical through holes is the horizontal axis direction of the deposition mask, and the vertical axis direction is the , and a second diagonal direction different from the first diagonal direction. The island portion located on a line extending from the center of the through hole in the direction of the maximum or minimum diameter is That is, the evaporation mask according to the comparative example has a size deviation depending on the diagonal direction. The uniformity of the shape of the through holes may be reduced depending on the cross-sectional direction. The size of the island portion of the mask may vary greatly depending on the cross-sectional direction of the diagonal. As a result, the deposition mask according to the comparative example had a problem in that the quality of the deposition pattern was low. Ta.

[0079] In the examples, the size deviation and the size of the through-holes in a deposition mask having an asymmetrical through-hole are measured. The purpose of the present invention is to reduce the size deviation of the island portion and the asymmetrical shape. In a deposition mask having through-holes, uniformity of the through-holes even in different diagonal directions is achieved. The through holes of the deposition mask according to the embodiment are arranged in a zigzag pattern. Although it has an elliptical shape, it is penetrated in the horizontal axis, vertical axis, first diagonal direction, and second diagonal direction. The through holes may have a uniform size. The island is uniform in size in the horizontal, vertical, first diagonal, and second diagonal directions. As a result, the deposition mask according to the embodiment can have uniform through-holes. This can result in excellent quality of the deposition pattern produced.

[0080] The effects of the present invention will be described in detail below with reference to FIGS.

[0081] 6 and 7, the deposition masks according to the comparative examples have different patterns of large holes. The problem of uneven island portions due to the elliptical shape being inclined at different angles There is.

[0082] For example, the size of the first island portion IS1 located in the first diagonal direction I1 is It may be larger than the size of the second island portion IS2 located in the direction I2.

[0083] As a result, the size between the adjacent first island portion IS1 and second island portion IS2 is For example, the deviation of the size of the The size deviation between the first island portion and the second island portion may exceed 20%. The sizes of the first island portion and the second island portion that are aligned in the horizontal axis direction The deviation in size can exceed 10%. This causes a problem of reduced uniformity in the deposition pattern.

[0084] 8 and 9 are plan views of the effective portion of the deposition mask 100 according to the embodiment.

[0085] 6 to 9 show the first effective portion AA1, the second effective portion AA2, and the first effective portion AA3 of the deposition mask 100. 8 and 9 may be plan views of either the first effective portion AA1 or the second effective portion AA2. are intended to explain the shape of the through holes TH and the arrangement between the through holes TH according to the embodiment. The deposition mask 100 according to the embodiment is not limited to the number of through holes TH shown in the drawings. stomach.

[0086] 8 and 9, the deposition mask 100 has a plurality of through holes including a communication portion CA. In this case, the communicating portion CA of the plurality of through holes may have an elliptical shape. The diameter of the communication portion CA in one direction may be different from the diameter in the other direction.

[0087] The communication portion CA of the through hole TH has a first diameter D1 and a second diameter D2 different from the first diameter. Here, the first diameter D1 means the maximum diameter of the elliptical shape. The second diameter D2 may refer to the minimum diameter of the elliptical shape. The first diameter D1 direction and the second diameter D2 direction are at an angle of 90 degrees or a similar angle to each other. Here, similar angles can mean differences of less than 2 degrees around 90 degrees. Alternatively, similar angles here can mean differences of less than 1 degree around 90 degrees. Alternatively, similar angles here can mean differences of less than 0.5 degrees around 90 degrees. Cut.

[0088] The large surface hole and the communicating portion may have different shapes. The through-hole may be formed in an elliptical shape as described above. Also, the large-surface hole may be formed in a circular shape. That is, the diameter of the communication part in one direction is different from the diameter in the other direction, and the large surface The holes may have the same or similar diameter in one direction as one another.

[0089] The size deviation between the first large surface hole and the second large surface hole may be 10% or less. The size deviation between the first large surface hole and the second large surface hole may be 5% or less. The size deviation of the second large-surface hole may be 3% or less. If the size deviation exceeds 10%, the deposition efficiency may decrease. This can result in a decrease in the quality of the deposited pattern produced through this process.

[0090] The first diameter may be 50 μm or less. For example, the first diameter may be 40 μm or less. For example, the first diameter may be 30 μm or less.

[0091] The difference between the first diameter D1 and the second diameter D2 may be 10 μm or less. The difference between the diameter D1 and the second diameter D2 may be 7 μm or less. The difference between the first diameter D1 and the second diameter D2 may be 5 μm or less. If the difference exceeds 10 μm, the size of the islands located in different diagonal directions The deviation becomes large and the deposition quality may deteriorate.

[0092] The ratio of the second diameter D2 to the first diameter D1 (second diameter / first diameter) is 0.7 For example, the first diameter D1 is 40 μm and the The second diameter D2 is 30 μm, and the ratio of the second diameter D2 to the first diameter D1 is It could be 0.75 (30 / 40).

[0093] The ratio of the first island portion IS1 to the second island portion IS2 (first island The ratio of the size of the land portion to the size of the second island portion may be 0.6 to 0.9. The size IS1 of the first island portion is 34.0 μm, and the size IS2 of the second island portion is 34.0 μm. The size IS2 of the first island portion relative to the second island portion IS2 is 22 μm. The ratio of the fish part IS1 may be about 0.65.

[0094] The communicating portion of the through hole TH may have an elliptical shape that is inclined at a certain angle. The communication portions of the plurality of through holes may be arranged in an elliptical shape. The communicating portion has an elliptical shape inclined in the first diagonal direction OL1 and an elliptical shape inclined in the second diagonal direction OL2. The oval shapes may be alternated with the square shapes.

[0095] For example, the communicating portions of the plurality of through holes are arranged in a zigzag pattern spaced apart from each other in the longitudinal direction (horizontal axis direction). In particular, the communicating portions of the plurality of through holes may be arranged in a first diagonal direction OL1 in the longitudinal direction. elliptical shapes inclined in the first diagonal direction OL1 and elliptical shapes inclined in the second diagonal direction OL2 are alternately arranged, An elliptical shape inclined in the first diagonal direction OL1 and an elliptical shape inclined in the second diagonal direction OL2 The imaginary extension line connecting the maximum diameter directions may be zigzag Z1.

[0096] For example, the communicating portions of the plurality of through holes are formed in a direction perpendicular to the longitudinal direction of the metal plate (longitudinal axis direction). In particular, the communicating portions of the plurality of through holes may be arranged in a zigzag pattern. An ellipse tilted in the first diagonal direction OL1 and an ellipse tilted in the second diagonal direction OL2 The elliptical shapes inclined in the first diagonal direction OL1 and the elliptical shapes inclined in the second diagonal direction OL2 are arranged alternately. The imaginary extension line connecting the maximum diameter direction of the elliptical shape inclined to 2 can be zigzag type Z2 .

[0097] For example, the communicating portion of the through hole may be disposed at a certain angle. The vertical direction of the communicating portion of the through hole is inclined at a certain angle with respect to the width direction of the metal plate. It is possible.

[0098] Here, the first diagonal direction OL1 is a virtual line connecting the maximum diameters of the ellipses inclined in the first direction. The second diagonal direction OL2 connects the maximum diameter of the ellipse tilted in the second direction. The first diagonal direction OL1 and the second diagonal direction OL2 are mutually opposite. There may be crossovers.

[0099] For example, the angle between the first diagonal direction OL1 and one end of the deposition mask in the horizontal axis direction is In the case of an acute angle, the distance between the second diagonal direction OL2 and one end of the deposition mask in the horizontal axis direction is For example, the angle between the first diagonal direction OL1 and the deposition mask in the horizontal axis direction may be an obtuse angle. When the angle between the first and second diagonal directions OL2 and OL3 is obtuse, The angle between the mask and the edge of the deposition mask may be acute.

[0100] For example, the communicating portion of the through hole is such that the vertical direction of the through hole is perpendicular to the width direction of the metal plate. The through hole may be inclined at an angle of 1° to 60° or −1° to −60°. The communicating portion of the hole is such that the perpendicular direction of the communicating portion is 1° to 45° with respect to the width direction of the metal plate, or For example, the communicating portion of the through hole may be inclined at an angle of −1° to −45°. The perpendicular direction of the communicating portion is 1° to 10° or -1° to -10° with respect to the width direction of the metal plate. It may be arranged at an angle.

[0101] The first straight line of the communication portion connected to the first large surface holes V2-1 arranged in a row in the longitudinal axis direction The imaginary line connecting the first diameter D1 of the communicating portion connected to the second large surface hole V2-2 and the diameter D1 of the communicating portion is , may be zigzag shaped.

[0102] The first straight line of the communication portion connected to the first large surface holes V2-1 arranged in a row in the horizontal axis direction The imaginary line connecting the first diameter D1 of the communicating portion connected to the second large surface hole V2-2 and the diameter D1 of the communicating portion is , may be zigzag shaped.

[0103] The large-area hole is connected to one surface of the deposition mask in the horizontal direction such that the first diameter D1 is inclined at an acute angle. The first large surface hole V2-1 connected to the through portion and the longitudinal surface of the deposition mask and the first diameter D1 The second large surface hole V2-2 may be connected to the communicating portion inclined at an obtuse angle.

[0104] In the vertical axis direction, the first large surface holes V2-1 and the second large surface holes V2-2 are alternately aligned. They may be arranged in rows.

[0105] In the horizontal axis direction, the first large surface holes V2-1 and the second large surface holes V2-2 are alternately arranged. They may be arranged in rows.

[0106] A communicating portion between two adjacent through holes in the horizontal axis direction and a communicating portion between the two adjacent through holes in the vertical axis direction The communication between the two through holes located at the same position can form a windmill-shaped through hole set (SET). For example, two adjacent first large surface holes V2-1 in the vertical and horizontal directions are connected to each other. and two communicating parts connected to the second large surface holes V2-1 and V2-2. The set of aperture connections may be pinwheel shaped.

[0107] A communicating portion between a first through hole and a second through hole adjacent to each other in a horizontal axis direction within one through hole set. The through-holes in one set may be shaped to face each other with a mirror between them. The communicating portion of the third through hole and the communicating portion of the fourth through hole, which are adjacent to each other, are arranged opposite each other with the mirror in between. In addition, the first through holes adjacent to each other in the longitudinal axis direction in one through hole set may be in a shape similar to the above. The communicating portion of the third through hole and the communicating portion of the second through hole may be shaped to face each other with a mirror in between. The communicating portion of the second through hole and the communicating portion of the fourth through hole adjacent to each other in the longitudinal axis direction in the through hole set are The mirrors may be arranged to face each other.

[0108] The four through-hole sets SET, each having a windmill-shaped communication portion, are arranged in the horizontal axis direction of the deposition mask. For example, the four windmill-shaped through-hole sets may be arranged in a line in the longitudinal direction. The SET may include a first through-hole set SET1 and a second through-hole set SET2. The first through-hole set SET1 and the second through-hole set SET2 may be aligned along the horizontal axis. The first through-hole set SET1 and the second through-hole set SET2 are arranged in a line along the vertical axis. obtain.

[0109] A first island is provided between the first through hole set SET1 and the second through hole set SET2. A through hole portion IS1 may be located at the center of the four through holes in the first through hole set SET1. The second island portion IS2 may be located in the second through-hole set SET2. A second island portion IS2 may be located in the center.

[0110] In the four through-hole sets (SET), two through-holes adjacent to each other in the horizontal axis direction are A first elliptical through hole including an elliptical communicating portion arranged in one diagonal direction OL1 and a second diagonal It can mean a second elliptical through hole including an elliptical communicating portion arranged in the linear direction OL2. The two through holes positioned in the direction of the respective longitudinal axes of the two through holes are shaped like the first ellipse. The elliptical through-hole includes a communicating portion arranged in a second diagonal direction OL2 located in the direction of the vertical axis of the elliptical through-hole. a third elliptical through hole including a first diagonal line OL positioned in the longitudinal axis direction of the second elliptical through hole; The second through-hole may include a fourth elliptical through-hole including an elliptical communicating portion disposed at the first position.

[0111] When the through holes TH are arranged in a line along the vertical axis and the horizontal axis, The island portion IS is located between two diagonally adjacent through holes TH. That is, there is no adhesive between two adjacent through holes TH that are diagonally positioned. The island section IS may be located.

[0112] For example, an island portion IS is disposed between the first through hole TH1 and the fourth through hole TH4. In addition, an island portion IS is disposed between the second through hole TH2 and the third through hole TH3. It can be placed.

[0113] The horizontal axis that crosses two adjacent through holes is used as the reference point, and the tilt angle direction is about +45 degrees and about -45 degrees. The island portions IS can be positioned in the direction of the tilt angle of about ±45 degrees. The tilt angle direction may refer to a diagonal direction between the horizontal axis and the vertical axis, and the tilt angle in the diagonal direction may refer to a diagonal direction between the horizontal axis and the vertical axis. The angle may be measured in the same plane as the horizontal and vertical axes.

[0114] The first diagonal direction I connecting the second diameter D2 of the communicating portion connected to the first large surface hole V2-1 In the first large surface hole V2-1, a first island portion IS1 is disposed between two adjacent first large surface holes V2-1. It is possible.

[0115] The second diagonal connecting the first diameter D1 of the communicating portion connected to the second large surface hole V2-2 In the direction I2, a second island portion IS2 is arranged between two adjacent second large surface holes V2-2. It can be placed.

[0116] The size deviation between the adjacent first island portion IS1 and second island portion IS2 is 3 0% or less. Between the adjacent first island portion IS1 and second island portion IS2 The size deviation of the adjacent first island portion IS1 and second island portion IS2 can be 20% or less. The size deviation between the mask portion IS2 and the mask portion IS3 can be 10% or less. The size deviation between the adjacent first island portion IS1 and second island portion IS2 is 30%. Since the thickness is less than 100 μm, the uniformity of the through-hole size can be improved.

[0117] The first island portions IS1 and the second island portions IS2 are arranged alternately in the longitudinal direction. The first island portion IS1 and the second island portion IS2 may be arranged in a line in the horizontal axis direction. The bond portions IS2 can be arranged alternately in a row.

[0118] The distance between the first island portion IS1 and the second island portion IS2 adjacent to each other measured in the vertical axis direction or the horizontal axis direction is The size deviation between the fishtail portion IS2 and the fishtail portion IS3 may be 50% or less. Alternatively, the first island portion IS1 and the second island portion IS2 adjacent to each other measured in the horizontal axis direction The size deviation between the two may be 30% or less. The size between the adjacent first island portion IS1 and second island portion IS2 measured in the direction The deviation of adjacent lines measured along the longitudinal or transverse axis may be 10% or less. The size deviation between the first island portion IS1 and the second island portion IS2 exceeds 50%. In this case, there is a problem that the size of the deposition pattern changes depending on the diagonal direction.

[0119] The island portion IS shown in FIGS. 6 to 9 is a deposition mask in which the large surface holes V2 of the effective portion AA are formed. The other surface 102 of the disk 100 may refer to the unetched surface between the through holes TH. In detail, the island portion IS is an effective portion AA of the deposition mask, and is located within a large surface hole. The deposition mask 10 is not etched except for the second inner surface ES2 and the through-hole TH. It could be the other side of 0.

[0120] 8 and 9, the deposition masks according to the embodiment have different patterns of communication portions. The uniformity of the island portion can be improved even though the elliptical shape is inclined at various angles. Cut.

[0121] For example, the size of the first island portion IS1 located in the first diagonal direction I1 is The size of the second island portion IS2 located in the direction I2 may be the same as or similar to that of the second island portion IS2. The size of the first island portion IS1 and the size of the second island portion IS2 are The deviation may be 50% or less. Here, the similarity means that the first island portion IS This means that the deviation between the size of the first island IS1 and the size of the second island IS2 is 30% or less. For example, the first island portion and the front island portion arranged in a line in the longitudinal axis direction can be The size deviation of the second island portions may be 20% or less. The size deviation between the first island portion and the second island portion is 10% or less. It is possible.

[0122] The deposition mask of the embodiment can improve the uniformity of the deposition pattern regardless of the deposition direction. That is, the deposition mask of the embodiment has a size of two island portions adjacent to each other in the horizontal axis direction. The size of the two islands adjacent in the vertical axis direction and the size of the two islands adjacent in the diagonal direction are The deviation from the size of the island is less than 50% or less than 30%, so the deposition pattern The uniformity of the image can be improved.

[0123] The deposition mask 100 of the embodiment has a high resolution or ultra-high resolution of 400 PPI or more. The deposition mask 100 of the embodiment can be used for deposition of OLED pixels with a resolution of 6. For high-resolution to ultra-high-resolution OLED pixel deposition with resolutions of 100 PPI and above The deposition mask 100 of the embodiment has a high resolution of 700 PPI or more. The mask can be used for OLED pixel deposition with high resolution to ultra-high resolution. 100 is a high-resolution to ultra-high-resolution OLED pixel stack with a resolution of 800 PPI or more. It may be for wearing.

[0124] For example, the deposition mask 100 of the embodiment may be used to form a deposition pattern having a high resolution of Full HD (High Definition) with a resolution of 400 PPI or more. For example, the deposition mask 100 of the embodiment may be used to deposit OLED pixels with a horizontal and vertical pixel count of 1920*1080 or more and a resolution of 400 PPI or more. That is, one effective portion included in the deposition mask 100 of the embodiment may be used to form pixels with a resolution of 1920*1080 or more.

[0125] For example, the deposition mask 100 of the embodiment is QHD ( Forming a deposition pattern with high resolution (Quad High Definition) For example, the deposition mask 100 of the embodiment can be used for forming a mask in the horizontal and vertical directions. OLED display with a pixel count of 2560*1440 or more and 530 PPI or more The deposition mask 100 of the embodiment can be used for deposition of a thin film of silicon dioxide. The pixel count can be 530 PPI or more based on a 5.5-inch OLED panel. That is, one effective portion included in the deposition mask 100 of the embodiment has a resolution of 2560*1 It may be for forming 440 or more pixels.

[0126] For example, the deposition mask 100 of the embodiment is suitable for UHD ( Ultra High Definition deposition patterns are created. For example, the deposition mask 100 of the embodiment can be used to form a horizontal and vertical The number of pixels in the vertical direction is 3840*2160 or more, and the OLED display is 794 PPI or more. UHD (Ultra High Definition) level resolution for elemental deposition The purpose of the method may be to form a deposition pattern.

[0127] The diameter of the through hole TH may be the width between the communication portions CA. The diameter of H is the point where the tip of the inner surface of the small hole V1 meets the tip of the inner surface of the large hole V2. The first diameter D1 defined as the maximum diameter of the through hole TH can be measured. The diameter may be 3 μm or less. Here, the diameter may refer to the average diameter of the various through holes. Therefore, the deposition mask 100 according to the embodiment can achieve QHD-level resolution. For example, the first diameter D1 can be about 15 μm to about 33 μm. The first diameter D1 may be about 19 μm to about 33 μm. For example, the first diameter D1 may be It may be about 20 μm to about 27 μm. When the first diameter D1 exceeds about 33 μm, It may be difficult to achieve a resolution of 500 PPI or higher. If the thickness is less than about 15 μm, poor deposition may occur.

[0128] As shown in FIG. 9, the large-surface holes V2 (V2-1, V2-2) include a plurality of inner surfaces. In detail, the large hole V2 can be formed on the second-first inner surface ES2-1 and the second-second inner surface ES2-2. The large-surface hole may include a plurality of second-first inner surfaces ES2-1. and a plurality of second-2 inner surfaces ES2-2 are connected to each other. S2-1 and the plurality of second-second inner surfaces ES2-2 form a large surface hole of one through hole.

[0129] The second-first inner surface ES2-1 of the large-surface hole is a first straight line with respect to the center of the large-surface hole of the through-hole. The second-first inner surface ES2-1 is an inner surface located in the direction of the diameter D1. The inner surfaces are located on both sides of the maximum diameter direction based on the center of the surface hole. The first inner surface ES2-1 is adjacent to one end of the first diameter based on the center of the large surface hole of the through hole. The second sub-1-1 inner surface and the second sub-1-2 located at the other end opposite to the one end of the first diameter. The cross-sectional inclination angle of the first sub-2-1 inner surface is It can correspond to the cross-sectional inclination angle of the 2nd sub-2-1 inner surface.

[0130] The second-second inner surface ES2-2 of the large-surface hole is a second perpendicular surface with the center of the large-surface hole of the through hole as a reference. The second-second inner surface ES2-2 is an inner surface located in the direction of the diameter D2. The inner surfaces are located on both sides of the minimum diameter direction based on the center of the surface hole. The inner surface ES2-2 of the through hole is the first surface located at one end of the second diameter based on the center of the large surface hole of the through hole. a second sub-second inner surface and a second sub-second inner surface located at the other end opposite to the one end of the second diameter; On the other hand, the cross-sectional inclination angle of the first sub-2-2 inner surface is This may correspond to the cross-sectional inclination angle of the second sub-2-2 inner surface.

[0131] The second-1 inner surface ES2-1 and the second-2 inner surface ES2-2 are formed by an etching process. The second-1 inner surface ES2- may be a surface formed by an etching factor. The 2-1 inner surface ES2-1 and the 2-2 inner surface ES2-2 are connected to the through-hole TH of the deposition mask 100. For example, the second-first inner surface ES2-1 and the second-first inner surface ES2-2 may be an inner surface extending to the other surface 102. The second-second inner surface ES2-2 extends from the tip of the through hole TH toward the adjacent through hole TH. The second-first inner surface of the second-1 inner wall may extend in the direction of the island portion IS. The surface ES2-1 and the second-second inner surface ES2-2 may extend in the direction of the non-effective portion UA. That is, the 2-1 inner surface ES2-1 and the 2-2 inner surface ES2-2 are The mask 100 has a surface 102 extending in a direction in which a non-etched surface is formed. be.

[0132] Ribs RB1 and RB2 may be positioned between the through holes TH. A rib RB may be located between the adjacent large surface holes V2. More specifically, the second-first inner surfaces ES2-1 adjacent to each other are connected to each other. In more detail, the ribs RB may be located in the area where the second inner surfaces ES2-2 are adjacent to each other. In other words, the ribs RB may be located in the area where the adjacent This may be a region where the boundaries of adjacent large surface holes V2 are connected.

[0133] The deposition mask 100 according to the embodiment is an OLED pixel mask having a resolution of 400 PPI or more. In detail, the deposition mask 100 according to the embodiment can deposit the through-holes TH. The diameter is about 33 μm or less, and the pitch between the through holes TH is about 48 μm or less. Therefore, it is possible to deposit OLED pixels with a resolution of 500 PPI or higher. That is, by using the deposition mask 100 according to the embodiment, QHD-class resolution can be achieved. can be done.

[0134] The diameter of the through-holes TH and the interval between the through-holes TH are set to For example, the diameter of the through-hole TH is measured based on the green (G) pattern. The green (G) pattern has a low visual recognition rate, so it can be easily recognized by the red The number of the through holes TH is required to be greater than that of the red (R) pattern and the blue (B) pattern. The intervals may be narrower than those of the red (R) pattern and the blue (B) pattern. The SQ100 is an OLED deposition mask for achieving QHD display pixels. It is possible.

[0135] FIG. 10 shows the height between the cross section in the A-A' direction and the cross section in the B-B' direction in FIG. 1 is a diagram showing the cross sections of the respective components superimposed on each other to explain the step and size.

[0136] First, the cross section in the A-A' direction will be described. 1 is a cross section crossing the central region between the first through hole TH1 and the third through hole TH3. That is, the cross section in the AA' direction may not include the through-hole TH.

[0137] The cross section in the A-A' direction may have an island portion IS located therein. The island portion IS includes a surface parallel to one unetched surface of the deposition mask. Alternatively, the island portion IS can be formed by etching the deposition mask 100. This may include a surface that is the same as or parallel to another surface that is not present.

[0138] Next, a cross section in the B-B' direction will be described. A cross section crossing the center of each of two adjacent first through holes TH1 and second through holes TH2. That is, the cross section in the B-B' direction can include a plurality of through holes TH. .

[0139] The cross section in the B-B' direction is the etched surface in the large surface hole and the etched surface in the adjacent large surface hole. A rib RB may be located in the area where the etching surfaces are connected to each other. The rib RB may be an area where the boundaries of two adjacent large surface holes are connected. Since it is a grooved surface, it may have a smaller thickness than the island portion IS.

[0140] For example, the width of the island portion may be 2 μm or more. The width of the island portion IS may be 2 μm or more. In this case, the total volume of the deposition mask can be increased. The mask to be worn must be designed to ensure sufficient rigidity against the tensile force applied during the organic deposition process. This can be advantageous in maintaining uniformity of the through-holes.

[0141] 11 to 13, the process of forming the large-area hole in the example and the comparative example will be compared.

[0142] FIG. 11 is a cross-sectional view of the comparative example shown in FIGS. 6 and 7 taken along the first diagonal direction I1. be.

[0143] 6, 7, and 11, the front side in the first diagonal direction I1 according to the comparative example is The first island portion IS1 is located at a position closer to the second island portion IS in the second diagonal direction I2. The size of the first island in the first diagonal direction I1 may be larger than the size of the first island in the first diagonal direction I2. The size of the second island portion IS1 in the second diagonal direction I2 is larger than that of the second island portion IS2. Therefore, the second diameter D2' of the large surface hole V2 located in the first diagonal direction I1 is The size is smaller than the second diameter D2 of the large surface hole V2 located in the second diagonal direction I2. That is, in the deposition mask according to the comparative example, the size of the island portion varies depending on the diagonal direction. The size of the large holes varies, resulting in a problem of reduced deposition efficiency.

[0144] FIG. 12 is a cross-sectional view of the embodiment shown in FIGS. 8 and 9 in the first diagonal direction I1. be.

[0145] 8, 9, and 12, the first diagonal direction I1 according to the embodiment The first island portion IS1 is a portion of the second island portion IS2 in the second diagonal direction I2. The size may be the same or similar. The size deviation between the first island portion IS1 and the second island portion IS2 is 30% or less. It can mean that.

[0146] FIG. 12 shows the second diameter D2' of the large surface hole V2 of the comparative example measured in the first diagonal direction I1. The size difference with the second diameter D2 of the large surface hole V2 in the embodiment is also shown.

[0147] Referring to FIG. 12, the first island portion IS1 in the first diagonal direction I1 is The size of the second island portion IS2 in the second diagonal direction I2 is equal to or Therefore, the second large surface hole V2 located in the first diagonal direction I1 may be similar. Is the diameter D2 the same as the second diameter D2 of the large-surface hole V2 located in the second diagonal direction I2? In other words, the deposition mask according to the embodiment has a diagonal line. The size of the island is uniform and the deviation in the size of the large holes is small, which improves deposition efficiency. It can be improved.

[0148] FIG. 12 shows the second photoresist pattern when forming the large hole V2 in the comparative example in the first diagonal direction I1. The first and second photoresists are used to form the open area of ​​the resist layer PR2' and the large hole V2 of the embodiment. The size difference between the first and second open regions of the second layer PR1 and PR2 is shown in FIG. When the first island portion IS1 is formed in the diagonal direction I1, the second photoresist layer PR The open area of ​​2 can be set larger than that of the comparative example. The size of the first island portion IS1 in the first diagonal direction I1 is set smaller than that of the comparative example. As a result, in the embodiment, the elliptical through holes are arranged in a zigzag pattern, and the isla The problem of reduced deposition efficiency due to the zigzag formation of the bonded areas is also solved. That is, in the embodiment, the size of the large surface hole changes in different diagonal directions. To solve this problem, the embodiment uses a constant angle regardless of the diagonal direction. Provides a deposition mask with uniform first and second diameters of large holes with the same size as the iron part It is possible.

[0149] FIG. 13 shows the first diagonal direction I1 and the second diagonal direction I2 of the comparative example shown in FIGS. FIG.

[0150] The deposition mask of the comparative example has elliptical through holes arranged in a zigzag pattern. As a result, there was a problem in that the uniformity of the size of the large surface holes and the size of the island portions decreased. As a result, the first vapor deposition pattern DP1 formed passing through the cross section in the first diagonal direction I1 is is smaller than the second vapor deposition pattern DP2 formed passing through the cross section in the second diagonal direction I2. That is, in the evaporation mask of the comparative example, the size of the through-holes is This can vary depending on the direction, resulting in a large deviation in the size of the deposition pattern produced. There was a problem with the sound.

[0151] FIG. 14 shows the first diagonal direction I1 and the second diagonal direction I2 of the embodiment according to FIGS. FIG.

[0152] In the deposition mask of the embodiment, the elliptical through-holes are arranged in a zigzag pattern, but The design compensation can improve the uniformity of the large hole size and the island size. As a result, the first deposition pattern formed passing through the cross section in the first diagonal direction I1 The pattern DP1 is a second vapor deposition pattern DP2 formed by passing through the cross section in the second diagonal direction I2. That is, in the deposition mask of the embodiment, the size of the through holes can be uniform in the cross-sectional direction. Therefore, the deposition pattern produced through this method has a uniform size. Therefore, it can be manufactured with excellent quality.

[0153] 15 and 16 show deposition patterns formed through a deposition mask according to the embodiment. This is a diagram.

[0154] Referring to FIG. 15, the deposition mask 100 according to the embodiment is a deposition mask having a small facet hole V1 formed therein. The height H1 between one surface of the worn mask 100 and the communication part may be about 5 μm or less. Therefore, the distance between one surface of the deposition mask 100 and the substrate on which the deposition pattern is to be formed is short. This can reduce deposition defects due to the shadow effect. When R, G, and B patterns are formed using the deposition mask 100 according to the example, two adjacent patterns are This can prevent defects caused by different deposition materials being deposited in the areas between the lines. As shown in FIG. 16, when the pattern is formed in the order of R, G, and B from the left, The R and G patterns are vaporized in the area between the R and G patterns due to the shadow effect. It is possible to prevent the device from being worn.

[0155] In addition, the deposition mask 100 according to the embodiment has an island portion IS in an effective portion. Specifically, the upper surface of the island portion IS, which is the non-etched surface, can be reduced. The area of ​​the through-holes TH can be reduced, and when organic materials are deposited, the organic materials can easily pass through the through-holes TH. Therefore, the vapor deposition efficiency can be improved.

[0156] The features, structures, effects, etc. described in the above-described embodiments are intended to be illustrative and not restrictive of the present invention. The examples are included in the present specification and are not necessarily limited to only one embodiment. The features, structures, effects, etc. illustrated in the examples are not intended to be limiting unless one skilled in the art has ordinary skill in the art to which the examples pertain. It can be combined or modified with other embodiments by those skilled in the art. Therefore, all such combinations and modifications are to be construed as being within the scope of the present invention. should be.

[0157] Although the above description has been centered on the examples, these are merely examples and do not limit the present invention. It is understood that those skilled in the art will be able to understand the essence of the present invention. Various modifications and applications not exemplified above are possible within the scope of the basic characteristics. For example, each component specifically shown in the embodiment may be modified and implemented. The differences related to such modifications and applications are described in the attached It should be construed as being within the scope of the present invention as defined in the claims.

Claims

1. a metal plate including a vapor-deposited area and a non-vapor-deposited area; The deposition area includes a plurality of effective areas forming a deposition pattern and divisions between the effective areas. including a separate region, the plurality of effective areas include a plurality of through holes; The plurality of through holes are a plurality of facet holes formed on one surface; a plurality of large surface holes formed on the other surface opposite to the one surface; a communication portion that communicates the small surface hole and the large surface hole, The communication portion has an elliptical shape having a first diameter and a second diameter different from the first diameter. can be, The through hole is a first large-surface hole whose first diameter is inclined at an acute angle to one surface of the metal plate in the horizontal direction. a second diameter portion inclined at an obtuse angle to one surface of the deposition mask in the horizontal direction; a communicating portion connected to the two large surface holes, The first large surface holes and the second large surface holes are alternately arranged in a row in the longitudinal axis direction of the metal plate. 、 The first large surface holes and the second large surface holes are alternately arranged in a row in the horizontal axis direction of the metal plate. 、 The first large surface hole and the communicating portion are connected in a first diagonal direction connecting the first diameter. a first island portion is disposed between the two first large surface holes; The second large surface hole is connected to the second large surface hole in the second diagonal direction connecting the first diameter of the communicating portion. a second island portion is disposed between the two second large surface holes; a rib is disposed between the first island portion and the second island portion; The size deviation between the first island portion and the second island portion adjacent to each other is 30% or less. A deposition mask.

2. the size of at least two island portions adjacent in the horizontal axis direction; the size of at least two island portions adjacent to each other in the longitudinal axis direction; The size deviation of at least two of the island portions adjacent in the first and second diagonal directions is 30 2. The evaporation mask according to claim 1, wherein the concentration of the SiO2 is 0.01 or less.

3. 2. The method according to claim 1, wherein the size deviation between the first large-area hole and the second large-area hole is 10% or less. Evaporation mask.

4. a size deviation between the first island portion and the second island portion is 10% or less; Item 2. The evaporation mask according to item 1.

5. The rib thickness is 10 μm to 15 μm, 2. The deposition mask according to claim 1, wherein the thickness of the non-deposition area is 15 μm to 25 μm. 。

6. a ratio of a second diameter D2 to a first diameter D1 of a communicating portion between the first large-surface hole and the second large-surface hole; 2. The deposition mask according to claim 1, wherein the ratio D2 / D1 is 0.7 to 0.

93.

7. The ratio of the size of the first island portion to the size of the second island portion (the first island portion) The ratio of the size of the island portion to the size of the second island portion is 0.65 to 0.

9.

2. The evaporation mask according to claim 1.

8. a communication portion connecting two of the first large surface holes adjacent in the vertical axis direction and the horizontal axis direction; and a set of four through-hole communication parts each consisting of a first through-hole and two second large surface holes, The evaporation mask according to claim 1 , which has a pinwheel shape.

9. the first diameter is greater than the second diameter; the first diameter is 50 μm or less; 2. The deposition method according to claim 1, wherein the difference between the first diameter and the second diameter is 10 μm or less. mask.

10. The deposition mass according to claim 1 , wherein the communicating portion and the large hole have different shapes. nine.

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