Method for manufacturing light emitting element and light emitting element

Abstract

To provide a method for manufacturing a light emitting element capable of improving productivity, and the light emitting element.SOLUTION: A method for manufacturing a light emitting element comprises: a semiconductor formation process for forming an n-type semiconductor layer 3, an active layer 4, and a p-type semiconductor layer 5 on the first main surface 201 of the substrate; an electrode formation process for forming an n-side electrode 6 on the surface of the n-type semiconductor layer 3 and a p-side electrode 7 on the surface of the p-type semiconductor layer 5; a lens formation process for machining the substrate from a second main surface opposite the first main surface 201 to form a planar portion 211 and a plurality of lens portions 212 protruding from the planar portion 211; and a dicing process for cutting an element structure 10 having the substrate 200, the n-type semiconductor layer 3, the active layer 4, the p-type semiconductor layer 5, the n-side electrode 6, and the p-side electrode 7 at the position of the planar portion 211 to dice it into a plurality of light emitting elements, each having the lens portion 212 after the semiconductor formation process, electrode formation process, and lens formation process.SELECTED DRAWING: Figure 9

Description

[Technical Field]

[0001] The present invention relates to a method for manufacturing a light-emitting element and a light-emitting element. [Background technology]

[0002] Patent Document 1 discloses a deep ultraviolet light-emitting element chip that includes a deep ultraviolet light-emitting element having a multilayer film formed on a substrate, and a lens bonded to the surface of the substrate opposite to the multilayer film. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-111085 Summary of the Invention [Problem to be solved by the invention]

[0004] In the deep ultraviolet light emitting element chip described in Patent Document 1, a lens needs to be bonded to each and every deep ultraviolet light emitting element, making it difficult to improve productivity.

[0005] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method for manufacturing a light-emitting element that allows for improved productivity, and a light-emitting element. [Means for solving the problem]

[0006] In order to achieve the above-mentioned object, the present invention provides a method for manufacturing a light-emitting element, comprising: a semiconductor formation step of forming an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a first main surface of a substrate; an electrode formation step of forming an n-side electrode on the surface of the n-type semiconductor layer and a p-side electrode on the surface of the p-type semiconductor layer; a lens formation step of cutting the substrate from a second main surface opposite to the first main surface to form a flat portion and a plurality of lens portions protruding from the flat portion; and a singulation step, which is performed after the semiconductor formation step, the electrode formation step, and the lens formation step, of cutting an element structure including the substrate, the n-type semiconductor layer, the active layer, the p-type semiconductor layer, the n-side electrode, and the p-side electrode at the position of the flat portion, to singulate the element structure into a plurality of light-emitting elements each including the lens portion.

[0007] Furthermore, in order to achieve the above-mentioned object, the present invention provides a light-emitting device comprising: a substrate; an n-type semiconductor layer, an active layer, and a p-type semiconductor layer stacked on one side of the substrate; an n-side electrode formed on a surface of the n-type semiconductor layer; and a p-side electrode formed on a surface of the p-type semiconductor layer, wherein the other surface of the substrate has an annular flat portion and a lens portion protruding from the center of the flat portion. [Effects of the Invention]

[0008] According to the present invention, it is possible to provide a method for manufacturing a light-emitting element and a light-emitting element that can improve productivity. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a schematic cross-sectional view showing a configuration of a light-emitting element according to a first embodiment. [Figure 2] FIG. 1 is a schematic plan view of a light-emitting element according to a first embodiment. [Figure 3] 3 is a flowchart of a method for manufacturing a light-emitting element according to the first embodiment. [Figure 4] FIG. 3 is a schematic cross-sectional view of a substrate before a lens forming step in the first embodiment. [Figure 5]FIG. 2 is a schematic cross-sectional view of a substrate on which a mask is formed in the first embodiment. [Figure 6] FIG. 3 is a schematic cross-sectional view of the substrate after a lens forming step in the first embodiment. [Figure 7] FIG. 3 is a schematic plan view of the substrate after a lens forming step in the first embodiment. [Figure 8] FIG. 3 is a schematic cross-sectional view of the element structure after a semiconductor forming step and an electrode forming step in the first embodiment. [Figure 9] FIG. 3 is a schematic cross-sectional view showing a state in which scribe lines are being formed in an element structure in a scribing step in the first embodiment. [Figure 10] FIG. 3 is a plan view of the element structure after a scribing step in the first embodiment. [Figure 11] 5A to 5C are schematic cross-sectional views showing how the element structure is divided in a breaking step in the first embodiment. [Figure 12] 10 is a flowchart of a method for manufacturing a light-emitting element according to a second embodiment. [Figure 13] 10 is a flowchart of a method for manufacturing a light-emitting element according to a third embodiment. [Figure 14] FIG. 10 is a schematic cross-sectional view showing the configuration of a light-emitting element according to a fourth embodiment. [Figure 15] FIG. 10 is a schematic plan view of a light-emitting element according to a fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] [First embodiment] A first embodiment of the present invention will be described with reference to Figures 1 to 11. The embodiment described below is shown as a preferred specific example for carrying out the present invention, and although various technically preferable technical matters are specifically exemplified, the technical scope of the present invention is not limited to this specific embodiment.

[0011] (Light-emitting element 1) Fig. 1 is a schematic cross-sectional view showing the configuration of a light-emitting element 1 in this embodiment. Fig. 2 is a schematic plan view of the light-emitting element 1. Note that in Fig. 1, the dimensional ratios of the layers of the light-emitting element 1 in the stacking direction do not necessarily match the actual ones.

[0012] The light emitting element 1 of this embodiment is, for example, a light emitting diode (LED) In ​​this embodiment, an example will be described in which the light emitting element 1 is an LED that emits ultraviolet light.

[0013] 1, the light-emitting element 1 of this embodiment includes a substrate 2, an n-type semiconductor layer 3, an active layer 4, and a p-type semiconductor layer 5 stacked on one side of the substrate 2, an n-side electrode 6 electrically connected to the n-type semiconductor layer 3, and a p-side electrode 7 electrically connected to the p-type semiconductor layer 5. The light-emitting element 1 is a flip-chip type light-emitting element 1 that is connected to a substrate such as a submount substrate (not shown) on the side opposite to the substrate 2 via a connection part such as a gold bump, and emits light from the substrate 2 side.

[0014] Hereinafter, the direction in which the substrate 2, the n-type semiconductor layer 3, the active layer 4, and the p-type semiconductor layer 5 are stacked (for example, the vertical direction in FIG. 1) will be referred to as the vertical direction, and one side in the vertical direction, the side on which the n-type semiconductor layer 3, the active layer 4, and the p-type semiconductor layer 5 are stacked with respect to the substrate 2 (for example, the lower side in FIG. 1), will be referred to as the lower side, and the opposite side (for example, the upper side in FIG. 1) will be referred to as the upper side. Note that the expressions "upper" and "lower" are used for convenience and do not limit the position of the light-emitting element 1 relative to the vertical direction, for example, when the light-emitting element 1 is in use.

[0015] The substrate 2 is a substrate that has a property of transmitting light (ultraviolet light in this embodiment) emitted by the active layer 4. In this embodiment, the substrate 2 is a sapphire (Al2O3) substrate. Alternatively, the substrate 2 may be, for example, an aluminum nitride (AlN) substrate or an aluminum gallium nitride (AlGaN) substrate.

[0016] 1 and 2, the upper surface 21 of the substrate 2 has an annular flat portion 211 and a lens portion 212 protruding upward from the flat portion 211. The flat portion 211 has a rectangular outer edge. The lens portion 212 is located in the center of the flat portion 211.

[0017] The lens portion 212 focuses the light emitted from the active layer 4 in a predetermined direction. In this embodiment, the lens portion 212 is a single hemispherical lens having a convex hemispherical shape facing upward, and focuses the light emitted from the active layer 4 upward. When viewed from above, the area of ​​the lens portion 212 is larger than the area of ​​the flat portion 211.

[0018] As shown in FIG. 1 , the thickness T1 of the portion of the substrate 2 where the flat portion 211 is formed is less than half the thickness T2 of the portion of the substrate 2 where the lens portion 212 is formed. In other words, the thickness T1 is the vertical length from the lower surface 22 of the substrate 2 to the flat portion 211 of the substrate 2, and the thickness T2 is the vertical length from the lower surface 22 of the substrate 2 to the upper end position of the lens portion 212. The thickness T1 is preferably ⅓ or less of the thickness T2. Furthermore, the thickness T1 is preferably smaller than the thickness T3 of the lens portion 212, and more preferably ⅓ or less of the thickness T3. Having a small thickness T1 in this way facilitates the singulation step S4 in the manufacturing method of the light-emitting element 1, which will be described later.

[0019] On the lower surface 22 of the substrate 2, an n-type semiconductor layer 3, an active layer 4, and a p-type semiconductor layer 5 are laminated in this order.

[0020] The n-type semiconductor layer 3, active layer 4, and p-type semiconductor layer 5 are multiple semiconductor layers formed on the lower surface 22 of the substrate 2. The n-type semiconductor layer 3 is a semiconductor layer doped with n-type impurities, and the p-type semiconductor layer 5 is a semiconductor layer doped with p-type impurities. The active layer 4 is a semiconductor layer in which electrons and holes recombine to emit light of a predetermined wavelength, and can have, for example, a single quantum well structure or a multiple quantum well structure.

[0021] A general configuration can be adopted for the plurality of semiconductor layers formed on the lower surface 22 of the substrate 2. For example, when the light emitting element 1 is an LED that emits ultraviolet light, the plurality of semiconductor layers may be Al x Ga y In 1-x-y N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) can be used. Each of the n-type semiconductor layer 3, the active layer 4, and the p-type semiconductor layer 5 may be a single layer or multiple layers. Furthermore, the multiple semiconductor layers formed on the lower surface 22 of the substrate 2 may include semiconductor layers other than the n-type semiconductor layer 3, the active layer 4, and the p-type semiconductor layer 5. For example, a buffer layer may be provided between the substrate 2 and the n-type semiconductor layer 3.

[0022] The n-type semiconductor layer 3 has an exposed surface 31 that is exposed from the active layer 4 and faces downward. An n-side electrode 6 is formed on the exposed surface 31. A p-side electrode 7 is formed on the lower surface of the p-type semiconductor layer 5. The n-side electrode 6 and the p-side electrode 7 can have a general configuration. The p-side electrode 7 is preferably a reflective electrode that reflects light emitted from the active layer 4.

[0023] (Method of manufacturing the light-emitting element 1) Next, a method for manufacturing the light-emitting element 1 of this embodiment will be described with reference to Figures 3 to 11. Figure 3 is a flowchart of the method for manufacturing the light-emitting element 1 of this embodiment.

[0024] As shown in FIG. 3, the method for manufacturing the light emitting element 1 of this embodiment includes, in this order, a lens forming step S1, a semiconductor forming step S2, an electrode forming step S3, and a singulation step S4.

[0025] 4 is a schematic cross-sectional view of the substrate 20 before the lens formation step S1. In the lens formation step S1, first, a disk-shaped substrate 20 is prepared. The substrate 20 has both planar main surfaces, and hereinafter, one main surface of the substrate 20 will be referred to as the first main surface 201, and the other main surface will be referred to as the second main surface 202. The first main surface 201 is the main surface on which multiple semiconductor layers are stacked, and the second main surface 202 is the main surface on which processing is performed in the lens formation step S1.

[0026] 5 is a schematic cross-sectional view of a substrate 20 on which a mask 11 is formed. In the lens forming step S1, the mask 11 is formed on the second main surface 202 of the substrate 20. The mask 11 is formed so that a surface 111 opposite to the substrate 20 has a shape corresponding to the surface shape of the substrate 20 after the lens forming step S1 (details will be described later). The method for forming the mask 11 is not particularly limited, and various techniques such as publicly known techniques can be used.

[0027] Then, etching is performed on the mask 11 from the side opposite to the substrate 20, thereby removing portions of the mask 11 and the substrate 20 opposite to the first main surface 201. In FIG. 5, the direction of etching is indicated by arrows. The etching can be, for example, dry etching or wet etching. The substrate after the lens formation step S1 is referred to as substrate 200.

[0028] FIG. 6 is a schematic cross-sectional view of the substrate 200 after the lens formation step S1. FIG. 7 is a schematic plan view of the substrate 200 after the lens formation step S1. The surface 200a of the substrate 200 opposite the first main surface 201 is formed to have a surface shape corresponding to the surface shape of the mask 11. The surface 200a has a planar portion 211 formed parallel to the first main surface 201 and a plurality of lens portions 212 formed in a matrix pattern vertically and horizontally. The lens portions 212 are arranged with a gap between adjacent lens portions 212 in both the vertical and horizontal directions. The narrower the gap, the more light-emitting elements 1 can be manufactured. However, the narrower the gap, the more likely it is that a cutting jig, laser light, or the like will interfere with the lens portions 212 during the singulation step S4, which will be described later. Therefore, the gap is designed taking these factors into consideration.

[0029] In reality, a large number of lens portions 212 (for example, 1000 or more) can be formed on the surface 200a of the substrate 200, but for convenience, FIGS. 6 and 7 show only a small number of lens portions 212 as a schematic example.

[0030] 8 is a schematic cross-sectional view of the element structure 10 after the semiconductor formation step S2 and the electrode formation step S3. After the lens formation step S1, the semiconductor formation step S2 is performed. In the semiconductor formation step S2, an n-type semiconductor layer 3, an active layer 4, and a p-type semiconductor layer 5 are sequentially grown on the first main surface 201 of the substrate 200. The n-type semiconductor layer 3, the active layer 4, and the p-type semiconductor layer 5 can be formed by a well-known epitaxial growth method such as metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or halide vapor phase epitaxy (HVPE). The semiconductor formation step S2 is performed as described above.

[0031] After the semiconductor formation step S2, an electrode formation step S3 is carried out. In the electrode formation step S3, a mask (not shown) is first formed at a predetermined location on the surface of the p-type semiconductor layer 5 opposite the active layer 4, and parts of the p-type semiconductor layer 5, the active layer 4, and the n-type semiconductor layer 3 formed in positions that do not overlap with the mask are removed by etching. As a result, an exposed surface 31 is formed in the n-type semiconductor layer 3. After the exposed surface 31 is formed, the mask is removed.

[0032] Next, an n-side electrode 6 is formed on the exposed surface 31 of the n-type semiconductor layer 3, and a p-side electrode 7 is formed on the surface of the p-type semiconductor layer 5 opposite to the active layer 4. The n-side electrode 6 and the p-side electrode 7 are formed by a well-known method such as electron beam evaporation or sputtering. A structure obtained through the lens formation step S1, the semiconductor formation step S2, and the electrode formation step S3, which includes the substrate 200 on which the plurality of lens portions 212 are formed, the n-type semiconductor layer 3, the active layer 4, the p-type semiconductor layer 5, the n-side electrode 6, and the p-side electrode 7, is referred to as an element structure 10.

[0033] After the electrode forming step S3, the singulating step S4 is carried out. The singulating step S4 is a step of cutting the element structure 10 into a plurality of light-emitting elements 1. In this embodiment, the singulating step S4 includes a scribing step and a breaking step.

[0034] 9 is a schematic cross-sectional view showing a state in which scribe lines 211a are formed on the element structure 10 in the scribing step. The scribing step is a step of forming groove-shaped scribe lines 211a in the flat portion 211 of the substrate 200, which serve as starting points for dividing the element structure 10 in the breaking step. In the scribing step, the scribe lines 211a are formed on the flat portion 211 of the substrate 200 using a laser, a blade, or the like. FIG. 9 shows, as an example, a state in which the scribe lines 211a are formed using laser light 12. When a blade is used, the scribe lines 211a may be formed on the flat portion 211 of the substrate 200 by rotating the blade, or the scribe lines 211a may be formed by cutting the flat portion 211 by moving the blade vertically and horizontally over the flat portion 211.

[0035] 10 is a plan view of the element structure 10 after the scribing step. The scribe lines 211a include a plurality of vertical scribe lines 211b extending in the vertical direction and formed at equal intervals in the horizontal direction, and a plurality of horizontal scribe lines 211c extending in the horizontal direction and formed at equal intervals in the vertical direction. The scribe lines 211a are formed in a lattice pattern as a whole so as to surround the plurality of lens portions 212. The scribe lines 211a are formed at positions away from the lens portions 212 so as not to contact the lens portions 212.

[0036] After the scribing step, the breaking step is carried out. Fig. 11 is a schematic cross-sectional view showing how the element structure 10 is divided in the breaking step. The breaking step is a step in which the tip of the breaking blade 13 is pressed against the element structure 10 from the side opposite to the scribe line 211a, thereby dividing the element structure 10 along the scribe line 211a.

[0037] The cutting edge of the breaking blade 13 is longer than each scribe line 211a. For example, in FIG. 11 , the breaking blade 13 is longer in the depth direction of the page. In the breaking step, the cutting edge of the breaking blade 13 is oriented parallel to a specific scribe line 211a and pressed against a position on the surface of the element structure 10 opposite the substrate 200 that overlaps the specific scribe line 211a in the vertical direction, thereby dividing the element structure 10 starting from the specific scribe line 211a. By performing this process along each of the other scribe lines 211a, the element structure 10 is divided into a plurality of light-emitting elements 1.

[0038] Although not shown in the drawings, grid-like streets, where the n-side electrode 6 and the p-side electrode 7 are not formed, are formed on the surface of the element structure 10 opposite the substrate 200 side before division at positions that overlap the grid-like scribe lines 211a in the vertical direction. When the cutting edge of the breaking blade 13 is pressed against the element structure 10, the cutting edge is pressed against the streets. This prevents the n-side electrode 6 and the p-side electrode 7 from being pressed by the breaking blade 13 and deforming so as to droop, thereby preventing the light-emitting element 1 from being manufactured in which the n-side electrode 6 and the p-side electrode 7 are shorted. In this manner, the light emitting device 1 is manufactured.

[0039] (Functions and Effects of the First Embodiment) The manufacturing method of the light-emitting element 1 of this embodiment includes a lens forming step S1 in which the substrate 20 is cut from the second main surface 202 opposite to the first main surface 201 to form a flat portion 211 and a plurality of lens portions 212. In addition, in the manufacturing method of the light-emitting element 1 of this embodiment, a singulation step S4 is performed after the semiconductor forming step S2, the electrode forming step S3, and the lens forming step S1, in which the element structure 10 is cut at the position of the flat portion 211 to be singulated into a plurality of light-emitting elements 1 each having a lens portion 212. Therefore, there is no need to bond lenses separate from the substrate 2 of the light-emitting element 1 to the substrate 2, and productivity of the light-emitting element 1 is improved. In addition, in the singulation step S4, the element structure 10 is cut at the position of the flat portion 211, so that the cutting of the element structure 10 is stably performed.

[0040] Furthermore, in the method for manufacturing the light-emitting element 1 of this embodiment, the semiconductor forming step S2 is performed after the lens forming step S1, thereby preventing any adverse effects on the semiconductor layer during the lens forming step S1.

[0041] Furthermore, in the substrate 200 after the lens forming step S1, the thickness T1 of the portion where the flat portion 211 is formed is less than half the thickness T2 from the first main surface 201 to the position of the end of the plurality of lens portions 212 on the side farther from the first main surface 201. By making the thickness T1 relatively thin in this way, it becomes easier to split the element structure 10 in the singulation step S4.

[0042] As described above, according to the present embodiment, it is possible to provide a method for manufacturing a light emitting device and the light emitting device 1 that can improve productivity.

[0043] [Second embodiment] A second embodiment of the present invention will be described with reference to Fig. 12. Fig. 12 is a flowchart of a method for manufacturing a light-emitting element 1 in this embodiment.

[0044] In this embodiment, the manufacturing order of the light-emitting element 1 is changed from that of the first embodiment. Specifically, in the manufacturing method of the light-emitting element 1 of this embodiment, the semiconductor forming step S2, the lens forming step S1, the electrode forming step S3, and the singulation step S4 are performed in this order. That is, in this embodiment, the semiconductor forming step S2 is performed using a flat substrate 20 on which no lens portion 212 is formed.

[0045] The rest is the same as in the first embodiment. In addition, among the symbols used in the second embodiment and the following embodiments, the same symbols as those used in the previous embodiments represent the same components, etc. as in the previous embodiments, unless otherwise specified.

[0046] (Functions and Effects of the Second Embodiment) In the manufacturing method of the light-emitting element 1 of this embodiment, the lens forming step S1 is performed after the semiconductor forming step S2. Unlike this embodiment, if the semiconductor forming step S2 is performed using the substrate 200 on which the lens portion 212 is formed, the thickness of the substrate 200 varies depending on the location, which may cause unevenness in the temperature of the substrate 200 during the semiconductor forming step S2 and thus unevenness in the formation of the semiconductor layer. On the other hand, this embodiment eliminates the above-mentioned concerns. In addition, the second embodiment has the same effects as the first embodiment.

[0047] [Third embodiment] A third embodiment of the present invention will be described with reference to Fig. 13. Fig. 13 is a flowchart of a method for manufacturing a light-emitting element 1 in this embodiment.

[0048] This embodiment is different from the first and second embodiments in the manufacturing order of the light-emitting element 1. Specifically, in the manufacturing method of the light-emitting element 1 of this embodiment, a semiconductor forming step S2, an electrode forming step S3, a lens forming step S1, and a singulation step S4 are performed in this order. The rest is the same as in the first and second embodiments.

[0049] (Functions and Effects of the Third Embodiment) In this embodiment, the lens forming step S1 is performed after the electrode forming step S3. This prevents uneven processing during the electrode forming step S3. That is, unlike this embodiment, if the electrode forming step S3 is performed after the lens forming step S1, warping of the substrate 20 may increase after the lens forming step S1, which may cause uneven processing during the electrode forming step S3. However, this embodiment prevents such a risk. This embodiment also has the same effects as the first and second embodiments.

[0050] [Fourth embodiment] A fourth embodiment of the present invention will be described with reference to Fig. 14 and Fig. 15. Fig. 14 is a schematic cross-sectional view showing the configuration of a light-emitting element 1 in this embodiment. Fig. 15 is a schematic plan view of the light-emitting element 1.

[0051] In this embodiment, unlike the first to third embodiments, each lens portion 212 is formed as a single Fresnel lens. The rest is the same as in the first embodiment.

[0052] [Functions and Effects of the Fourth Embodiment] The same functions and effects as those of the first to third embodiments are achieved.

[0053] [Variations] Possible modifications of the first to fourth embodiments will be described below.

[0054] In the first to fourth embodiments, an example has been shown in which the scribing step forms the scribe line 211a on the flat portion 211 of the substrate 200, and the breaking step brings the cutting edge of the break blade 13 into contact with the surface of the element structure 10 opposite the substrate 200, but this is not limiting. For example, the scribing step may form the scribe line 211a at a position that overlaps the flat portion 211 in the vertical direction on the surface of the element structure 10 facing the substrate 200, and the breaking step may bring the cutting edge of the break blade 13 into contact with the flat portion 211 of the substrate 200. In this case, the spacing between the multiple lens portions 212 is designed to be such that the break blade 13 does not come into contact with the lens portions 212 in the breaking step.

[0055] Furthermore, in the first to fourth embodiments, the singulation step S4 is a scribing step and a breaking step, but is not limited to this and may be any step that can divide the element structure 10 into a plurality of light-emitting elements 1. For example, the singulation step S4 may be a step of dividing the element structure 10 into a plurality of light-emitting elements 1 by stealth dicing. In stealth dicing, a laser is applied to the position of the flat portion 211 of the element structure 10 to form a modified layer in the element structure 10, and then the element structure 10 can be divided into a plurality of light-emitting elements 1 starting from the modified layer by expanding or the like. Furthermore, the singulation step S4 may be a step of fully cutting the element structure 10 with a rotating blade.

[0056] (Summary of the embodiment) Next, the technical ideas grasped from the above-described embodiments will be described by using the reference numerals and the like in the embodiments. However, the reference numerals and the like in the following description do not limit the components in the claims to the members and the like specifically shown in the embodiments.

[0057] [1] A first embodiment of the present invention is a method for manufacturing a light-emitting element 1, comprising: a semiconductor forming step S2 of forming an n-type semiconductor layer 3, an active layer 4, and a p-type semiconductor layer 5 on a first main surface 201 of a substrate 20; an electrode forming step S3 of forming an n-side electrode 6 on a surface of the n-type semiconductor layer 3 and a p-side electrode 7 on a surface of the p-type semiconductor layer 5; a lens forming step S1 of cutting the substrate 20 from a second main surface 202 opposite to the first main surface 201 to form a flat portion 211 and a plurality of lens portions 212 protruding from the flat portion 211; and a singulation step S4, which is performed after the semiconductor forming step S2, the electrode forming step S3, and the lens forming step S1, of cutting an element structure 10 including the substrate 200, the n-type semiconductor layer 3, the active layer 4, the p-type semiconductor layer 5, the n-side electrode 6, and the p-side electrode 7 at the position of the flat portion 211 to singulate the element structure into a plurality of light-emitting elements 1 each including the lens portion 212. This improves the productivity of the light-emitting element 1.

[0058] [2] A second embodiment of the present invention is the first embodiment, in which the semiconductor forming step S2 is carried out after the lens forming step S1. This prevents any adverse effects on the semiconductor layers formed on the substrate 200 during the lens formation step S1.

[0059] [3] A third embodiment of the present invention is the first embodiment, wherein the lens forming step S1 is carried out after the semiconductor forming step S2. This prevents unevenness in the temperature of substrate 20 during semiconductor formation step S2.

[0060] [4] A fourth embodiment of the present invention is the third embodiment, wherein the lens forming step S1 is carried out after the electrode forming step S3. This prevents uneven processing from occurring during the electrode forming step S3.

[0061] [5] A fifth embodiment of the present invention is any one of the first to fourth embodiments, wherein the thickness T1 of the portion of the substrate 200 where the planar portion 211 is formed after the lens forming process S1 is less than half the thickness T2 from the first main surface 201 to the position of the end of the plurality of lens portions 212 that is farther from the first main surface 201. This makes it easier to split the element structure 10 in the singulation step S4.

[0062] [6] A sixth embodiment of the present invention is a light-emitting element 1 comprising a substrate 2, an n-type semiconductor layer 3, an active layer 4, and a p-type semiconductor layer 5 stacked on one side of the substrate 2, an n-side electrode 6 formed on the surface of the n-type semiconductor layer 3, and a p-side electrode 7 formed on the surface of the p-type semiconductor layer 5, and the other surface of the substrate 2 has an annular flat portion 211 and a lens portion 212 protruding from the center of the flat portion 211. This makes it possible to obtain a light emitting element 1 that is easy to manufacture.

[0063] [7] A seventh embodiment of the present invention is the sixth embodiment, in which the thickness T1 of the portion of the substrate 2 where the planar portion 211 is formed is less than half the thickness T2 from the lower surface 22, which is the surface of the substrate 2 on the n-type semiconductor layer 3 side, to the position of the end of the lens portion 212 on the side farther from the lower surface 22. This facilitates the singulation step S4.

[0064] (Addendum) Although the embodiments of the present invention have been described above, the invention according to the claims is not limited to the above-described embodiments. It should be noted that not all of the combinations of features described in the embodiments are necessarily essential to the means for solving the problems of the invention. Furthermore, the present invention can be appropriately modified and implemented within the scope of its spirit. [Explanation of symbols]

[0065] 1...Light emitting element 10...Element structure 2...Substrate 20...Substrate 201...First main surface 202...Second main surface 200...Substrate 211…Plane part 212...Lens section 3...n-type semiconductor layer 4…Active layer 5...p-type semiconductor layer 6...n side electrode 7...p side electrode S1: Lens formation process S2...Semiconductor formation process S3…Electrode formation process S4…Singulation process

Claims

1. a semiconductor forming step of forming an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a first main surface of a substrate; an electrode forming step of forming an n-side electrode on a surface of the n-type semiconductor layer and a p-side electrode on a surface of the p-type semiconductor layer; a lens forming step of forming a flat portion and a plurality of lens portions protruding from the flat portion by cutting the substrate from a second main surface opposite to the first main surface; a singulation step, which is carried out after the semiconductor formation step, the electrode formation step, and the lens formation step, of cutting an element structure including the substrate, the n-type semiconductor layer, the active layer, the p-type semiconductor layer, the n-side electrode, and the p-side electrode at the position of the flat portion to singulate the element structure into a plurality of light-emitting elements each including the lens portion. A method for manufacturing a light-emitting device.

2. After the lens forming step, the semiconductor forming step is carried out. The method for manufacturing the light-emitting device according to claim 1 .

3. After the semiconductor forming step, the lens forming step is carried out. The method for manufacturing the light-emitting device according to claim 1 .

4. After the electrode forming step, the lens forming step is carried out. The method for manufacturing the light-emitting element according to claim 3 .

5. After the lens forming step, the thickness of the substrate at the portion where the flat portion is formed is less than half of the thickness from the first main surface to the position of the end of each of the plurality of lens portions on the side farther from the first main surface. The method for manufacturing the light-emitting device according to claim 1 .

6. A substrate; an n-type semiconductor layer, an active layer, and a p-type semiconductor layer stacked on one side of the substrate; an n-side electrode formed on the surface of the n-type semiconductor layer; a p-side electrode formed on a surface of the p-type semiconductor layer, The other surface of the substrate has an annular flat portion and a lens portion protruding from the center of the flat portion. Light-emitting element.

7. a thickness of the portion of the substrate where the flat portion is formed is less than half of a thickness from a lower surface of the substrate, which is a surface on the n-type semiconductor layer side, to a position of an end of the lens portion farther from the lower surface; The light-emitting device according to claim 6 .

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