Joining device, joining method, and article manufacturing method

Abstract

To provide a technique advantageous in terms of joining reliability and joining accuracy.SOLUTION: Provided is a joining device performing joining operations to join a joining object to a joining target object, and the joining device has a driving unit that drives to join the joining object to the joining target object, and a control unit that controls the joining operations so that a joining shape of the joining object after the joining object is joined to the joining target object is a predetermined distorted shape.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a joining device, a joining method, and a method for manufacturing an article. [Background technology]

[0002] BACKGROUND ART When bonding a die (chip, semiconductor chip, etc.) as a bonding object to a substrate (object to be bonded), a technique has been proposed in which the die is bent into a downward convex shape and bonded to the substrate (see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2022-169798 Summary of the Invention [Problem to be solved by the invention]

[0004] In conventional technology, it is possible to improve bonding reliability by bending the die and bonding it to the substrate. However, because the die is bent, when it is bonded to a flat substrate, shape errors occur in the die, reducing the bonding accuracy between the die and the substrate.

[0005] The present invention has been made in view of the above problems of the conventional technology, and has an exemplary object to provide a technology that is advantageous in terms of bonding reliability and bonding accuracy. [Means for solving the problem]

[0006] In order to achieve the above object, a joining device as one aspect of the present invention is a joining device that performs a joining operation of joining a joining object to a workpiece, and is characterized by having a drive unit that drives the joining object to be joined to the workpiece, and a control unit that controls the joining operation so that the joining shape of the joining object after joining the joining object to the workpiece becomes a predetermined distorted shape.

[0007] Further objects and other aspects of the present invention will become apparent from the following description of the embodiments with reference to the accompanying drawings. [Effects of the Invention]

[0008] According to the present invention, for example, it is possible to provide a technique that is advantageous in terms of bonding reliability and bonding accuracy. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a diagram schematically illustrating a configuration of a joining device according to one aspect of the present invention. [Figure 2] 10A and 10B are diagrams for explaining bonding distortion that occurs when a die is bent and bonded to a wafer. [Figure 3] 2 is a flowchart for explaining a joining operation in the joining device shown in FIG. [Figure 4] FIG. 10 is a diagram showing an example of sensitivity representing the relationship between die information, bonding control conditions, and bonding distortion. [Figure 5] FIG. 2 is a diagram showing an example of a specific configuration of a bonding head. [Figure 6] FIG. 2 is a diagram showing an example of a specific configuration of a bonding head. [Figure 7] FIG. 10 is a diagram for explaining a joining method in the second embodiment. [Figure 8] 10A and 10B are diagrams for explaining a joining method in a third embodiment. [Figure 9] FIG. 10 is a diagram for explaining a joining method in a fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0011] In the following, the bonded object refers to an individual die including a semiconductor element, and the bonded object refers to a die including a semiconductor element formed on a substrate (wafer), but is not limited to these.

[0012] The bonded object includes, in addition to a die including a semiconductor element formed on a substrate, for example, a silicon interposer having wiring formed on a silicon wafer, a glass interposer having wiring formed on a glass wafer, etc. The bonded object also includes an organic interposer having wiring formed on an organic panel (PCB), or a wafer having semiconductor elements formed thereon to which a die including some semiconductor devices has already been bonded.

[0013] In addition to singulated dies, bonded objects include, for example, stacks of several singulated dies, small pieces of material, optical elements, MEMS, structures, etc. Furthermore, the bonding method between the bonded object and the object to be bonded is not limited. Examples of bonding methods between the bonded object and the object to be bonded include bonding with an adhesive, temporary bonding with a temporary adhesive, hybrid bonding, atomic diffusion bonding, vacuum bonding, and bump bonding. Thus, bonding methods between the bonded object and the object to be bonded include various temporary and permanent bonding methods. Various processes required for each bonding, such as cleaning, adhesive application, surface activation, pressure application, and heating, are considered to be included in the bonding process.

[0014] As an example of industrial application of the joining device according to one aspect of the present invention, for example, the following application examples are conceivable.

[0015] A first application example can be considered in the manufacture of stacked memories. When a bonding apparatus according to one aspect of the present invention is applied to the manufacture of stacked memories, the bonding object is a singulated memory die, and the object to be bonded is a memory die that is a semiconductor element formed on a wafer. In the manufacture of stacked memories, generally, about eight layers are stacked, and therefore, in the bonding of the eighth layer, the object to be bonded is a substrate on which six layers of memory dies have already been bonded on a wafer. Note that the final layer may be a driver die that drives the memory.

[0016] A second application example is heterogeneous integration of processors. While conventional processors are mainly SoCs in which logic circuits and SRAMs are configured within a single semiconductor element, this method manufactures each element on a separate wafer using an optimal process and then bonds them together to manufacture a processor. This reduces processor costs and improves yield. When a bonding apparatus according to one aspect of the present invention is applied to heterogeneous integration, the bonded object is a die such as an SRAM, antenna, or driver that has been singulated after probing. The object to be bonded is a logic die as a semiconductor element formed on a wafer. Typically, different dies are bonded sequentially, so the number of objects to be bonded increases sequentially. For example, if bonding starts with an SRAM, when bonding the next die after the SRAM, the object to be bonded is the logic wafer to which the SRAM is bonded.

[0017] A third application example is 2.5D bonding using a silicon interposer. A silicon interposer is a silicon wafer on which wiring is formed. 2.5D bonding involves bonding singulated dies using a silicon interposer to electrically bond the dies together. When a bonding apparatus according to one aspect of the present invention is applied to die bonding to a silicon interposer, the bonding object is a singulated die, and the object to be bonded is a silicon interposer on which wiring is formed on a silicon wafer. Generally, multiple types of dies are bonded to a silicon interposer, and therefore the object to be bonded also includes a silicon interposer to which several dies are bonded.

[0018] A fourth application example may be 2.1D bonding using an organic interposer or a glass interposer. An organic interposer is an organic panel (PCB substrate, CCL substrate) used as a package substrate on which wiring is formed. A glass interposer is a glass panel on which wiring is formed. 2.1D bonding involves bonding singulated dies to an organic interposer or a glass interposer, and electrically bonding the dies using the wiring on the interposer. When a bonding apparatus according to one aspect of the present invention is applied to die bonding to an organic interposer, the bonded object is a singulated die, and the bonded object is an organic panel on which wiring is formed. When a bonding apparatus according to one aspect of the present invention is applied to die bonding to a glass interposer, the bonded object is a singulated die, and the bonded object is a glass panel on which wiring is formed. Generally, multiple types of dies are bonded to an organic interposer or a glass interposer, and therefore the bonded object may also include an organic interposer or a glass interposer to which several dies are bonded.

[0019] A fifth application example is heterogeneous substrate bonding. For example, in the field of infrared image sensors, InGaAs is known as a highly sensitive material. Therefore, by using InGaAs for the sensor section that receives light and silicon for the logic circuit that extracts data, which enables high-speed processing, it is possible to manufacture a highly sensitive and high-speed infrared image sensor. However, InGaAs crystals are only mass-produced in small-diameter substrates (wafers), such as 4 inches, which are smaller than the mainstream 300 mm silicon wafer. Therefore, a technology has been proposed in which an individualized InGaAs substrate is bonded to a 300 mm silicon wafer on which a logic circuit is formed. The bonding apparatus according to one aspect of the present invention can also be applied to heterogeneous substrate bonding, which bonds substrates made of different materials and sizes. When the bonding apparatus according to one aspect of the present invention is applied to heterogeneous substrate bonding, the bonding object is a small piece of material such as InGaAs, and the bonded object is a large-diameter substrate such as a silicon wafer. The small piece of material is a sliced ​​crystal, but it is preferable to cut it into a rectangular shape.

[0020] First Embodiment FIG. 1 is a diagram schematically illustrating the configuration of a bonding apparatus BD according to one aspect of the present invention. The bonding apparatus BD performs a bonding operation in which an individual die 51 (bonding object) is bonded to an arbitrary position (a location to be bonded) on a wafer 6 (bonding target object) serving as a substrate. The die 51 is provided in a state in which it is arranged (held) on a dicing tape attached to a dicing frame 5. In this specification, directions are indicated by an XYZ coordinate system as shown in each drawing. Typically, the XY plane is a plane parallel to the horizontal plane, and the Z axis is an axis parallel to the vertical direction. The X axis, Y axis, and Z axis are shown as examples of directions that are orthogonal or intersect with each other.

[0021] 1, the bonding device BD has a pickup unit 3 and a bonding unit 4 arranged on a base 1 that is vibration-damped by a mount 2. In this embodiment, the pickup unit 3 and the bonding unit 4 are arranged on one base 1, but the pickup unit 3 and the bonding unit 4 may also be arranged individually on separate bases.

[0022] The bonding apparatus BD further includes a control unit CNT that controls each unit of the bonding apparatus BD. The bonding apparatus BD is configured, for example, by a PLD (abbreviation for Programmable Logic Device) such as an FPGA (abbreviation for Field Programmable Gate Array), an ASIC (abbreviation for Application Specific Integrated Circuit), a general-purpose or dedicated computer (information processing device) with a built-in program, or a combination of all or part of these. The control unit CNT comprehensively controls each unit of the bonding apparatus BD, for example, the pickup unit 3 and the bonding unit 4, in accordance with a program stored in the storage unit, to operate the bonding apparatus BD.

[0023] The pickup unit 3 includes a pickup head 31 and a release head 32. The pickup unit 3 peels the die 51 to be bonded to the wafer 6 from the dicing tape using the release head 32, and then sucks and holds the die 51 peeled from the dicing tape using the pickup head 31. The pickup head 31 rotates the die 51 by 180 degrees, for example, and hands it over to the bonding head 423 of the bonding unit 4.

[0024] The pickup head 31 comes into contact with the bonding surface of the die 51. Therefore, when applying a bonding method such as hybrid bonding that activates the surface to bond, it is preferable to treat the surface of the pickup head 31 that comes into contact with the bonding surface. For example, it is recommended to process the surface with a highly stable coating such as a diamond-like carbon (DLC) coating or a fluorine coating, or to reduce the contact area by processing it into a small shape such as a high-density pin shape. It is also possible to use a non-contact holding method such as a Bernoulli chuck, or to hold the side or edge of the die 51 to prevent contact with the bonding surface.

[0025] The bonding unit 4 functions as a bonding unit for performing a bonding operation to bond the die 51 to the wafer 6. The bonding unit 4 includes a stage base 41 and an upper base 42. A wafer stage 43 is mounted on the stage base 41. The wafer stage 43 is driven in the X and Y directions by a driving mechanism 436 such as a linear motor. The driving mechanism 436 may further be configured to drive the wafer stage 43 to rotate about an axis parallel to the Z direction. However, instead of the driving mechanism 436 driving the wafer stage 43 to rotate about an axis parallel to the Z direction, the bonding head 423 may drive the die 51 to rotate about an axis parallel to the Z direction. The driving mechanism 436 functions as a positioning mechanism that changes the relative position between the wafer chuck 433 (or the wafer 6) and the bonding head 423 (or the die 51).

[0026] A die observation camera 431 is provided on the wafer stage 43. The die observation camera 431 captures an image of the die 51 held by the bonding head 423. The control unit CNT detects (specifies) the position of a characteristic part of the die 51 held by the bonding head 423 from the image acquired by the die observation camera 431. In addition, a bar mirror 432 is provided on the wafer stage 43. The bar mirror 432 is used as a target for the interferometer 422.

[0027] In this embodiment, the bonding head 423 functions as a first holder that holds the die 51. The wafer stage 43 functions as a second holder that holds the wafer 6 via the wafer chuck 433.

[0028] In this embodiment, the wafer stage 43 functions as a support structure that supports the wafer chuck 433 and the die observation camera 431. The wafer stage 43 as a support structure includes a first end face (the left end face in FIG. 1 ) on the side from which the die 51 is transferred to the bonding head 423, and a second end face (the right end face in FIG. 1 ) opposite the first end face. The die observation camera 431 is disposed between the first end face and an imaginary plane that passes through the center of the wafer stage 43 (support structure) and is parallel to the first end face. From another perspective, the die observation camera 431 is disposed between the wafer chuck 433 and a predetermined position on the path along which the die 51 is transferred to the bonding head 423. This configuration is advantageous for reducing the amount of movement of the wafer stage 43 required for the die observation camera 431 to observe the die 51 held by the bonding head 423, thereby improving throughput.

[0029] A wafer observation camera 421 is provided on the upper base 42. The wafer observation camera 421 captures an image of the wafer 6 held by the wafer chuck 433 (wafer stage 43). The control unit CNT detects (specifies) the positions of characteristic parts of the wafer 6 held by the wafer chuck 433 from the image acquired by the wafer observation camera 421. Furthermore, the control unit CNT determines the positions of a plurality of parts to be bonded on the wafer based on the positions of the characteristic parts of the wafer 6.

[0030] The upper base 42 is further provided with an interferometer 422 for measuring the position of the wafer stage 43 using a bar mirror 432, and a bonding head 423 for holding the die 51 handed over from the pickup head 31 and bonding it to the bonding target portion of the wafer 6.

[0031] In this embodiment, the upper base 42 functions as a support structure that supports the bonding head 423 and the wafer observation camera 421. The upper base 42 as a support structure includes a third end face (the left end face in FIG. 1 ) on the side where the die 51 is transferred to the bonding head 423, and a fourth end face (the right end face in FIG. 1 ) opposite the third end face. The wafer observation camera 421 is disposed between a virtual plane that passes through the center of the upper base 42 (support structure) and is parallel to the second end face, and the second end face. This configuration is advantageous in reducing the amount of movement of the wafer stage 43 required for the wafer observation camera 421 to observe the wafer 6 held by the wafer chuck 433, thereby improving throughput.

[0032] The bonding head 423 is driven in the Z direction by a driving mechanism 425 such as a linear motor. The driving mechanism 425 may be further configured to drive the bonding head 423 in the X and Y directions, or may be configured to drive the bonding head 423 in rotation about an axis parallel to the Z direction.

[0033] When bonding the die 51 to the bonding target portion of the wafer 6, for example, the driving mechanism 425 drives the bonding head 423 downward (in the -Z direction), thereby bonding the die 51 held by the bonding head 423 to the bonding target portion of the wafer 6. Alternatively, the driving mechanism 436 may drive the wafer stage 43 upward (in the +Z direction), thereby bonding the die 51 to the bonding target portion of the wafer 6 held by the wafer stage 43 (wafer chuck 433). Alternatively, the driving mechanism (not shown) may drive the wafer chuck 433 upward, thereby bonding the die 51 to the bonding target portion of the wafer 6 held by the wafer chuck 433. In this way, the driving mechanisms 425 and 436 function as a driving unit that drives at least one of the bonding head 423 (the die 51 held by it) and the wafer stage 43 (the wafer 6 held by it) so that the die 51 is bonded to the wafer 6.

[0034] In this embodiment, a configuration is adopted in which the pickup head 31 rotates the die 51 by 180 degrees and passes it to the bonding head 423. However, one or more die holders may be provided between the pickup head 31 and the bonding head 423, and the die 51 may be passed from the pickup head 31 to the die holder, and then from the die holder to the bonding head 423. Also, a drive mechanism for driving the bonding head 423 may be provided to drive the bonding head 423 so that the bonding head 423 receives the die 51 from the pickup head 31. Note that the bonding device BD may have multiple pickup heads, multiple release heads, and multiple bonding heads to improve productivity.

[0035] In this embodiment, in order to improve bonding reliability when bonding the die 51 to the wafer 6, the bonding head 423 bends the die 51 into a convex shape toward the wafer 6, i.e., bends the die 51 into a downward convex shape and bonds it to the wafer 6. Specifically, as shown in FIG. 2( a), the die 51 is bent into a shape with its center protruding and brought into contact with the wafer 6, so that the die 51 is sequentially bonded to the wafer 6 while pushing air from the center toward the periphery. However, when the die 51 is bent and bonded to the wafer 6, the shape of the die 51 is distorted, as shown in FIG. 2( b), and a shape error (hereinafter referred to as “bonding distortion”) occurs in the die 51. The bonding distortion that occurs when the die 51 is bent and bonded to the wafer 6 results in a deviation in the bonding position of the die 51 relative to the wafer 6, thereby reducing the bonding accuracy between the die 51 and the wafer 6.

[0036] The bonding strain that occurs when the die 51 is bonded to the wafer 6 is due to die information about the die 51 and bonding control conditions related to the bonding operation of bonding the die 51 to the wafer 6. The die information includes, for example, the thickness of the die 51, the size of the die 51, the material of the die 51, and the stress of the semiconductor element formed on the die 51. The bonding control conditions include, for example, the amount and shape of bending of the die 51 (at the center relative to the periphery), and the relative speed between the die 51 and the wafer 6 when bonding the die 51 to the wafer 6. The bonding control conditions also include the coefficient of friction of the bonding head 423 that holds the die 51 and the holding force of the bonding head 423 that holds the die 51.

[0037] Therefore, in this embodiment, the bonding distortion is controlled by adjusting the bonding control conditions for the bonding operation of bonding the die 51 to the wafer 6 according to the die information. For example, the control unit CNT controls the bonding operation of bonding the die 51 to the wafer 6 so that the bonded shape of the die 51 after bonding the die 51 to the wafer 6 becomes a predetermined distorted shape.

[0038] The bonding operation (bonding method) in the bonding apparatus BD will be described with reference to Fig. 3. As described above, in this embodiment, the bonding operation includes an operation of bonding the die 51 to the wafer 6 in a state in which the die 51 is bent into a downward convex shape (a convex shape toward the wafer 6 side). As described above, this bonding operation is performed by the control unit CNT comprehensively controlling each unit of the bonding apparatus BD. It is assumed that the preparation step of preparing the die 51 and the wafer 6 and the carry-in step of carrying the prepared die 51 and wafer 6 into the bonding apparatus BD have been performed.

[0039] In S101, the control unit CNT acquires die information about the die 51 and a target amount of bonding strain for the die 51. As described above, the die information includes at least one of the thickness of the die 51, the size of the die 51, the material of the die 51, and the stress of the semiconductor element formed on the die 51. The target amount of bonding strain for the die 51 also includes a target shape of the bonded shape of the die 51 after bonding the die 51 to the wafer 6, i.e., a predetermined distortion shape to be intentionally generated in the die 51. In this way, in this embodiment, the control unit CNT also functions as an acquisition unit that acquires the die information and the target amount of bonding strain (predetermined distortion shape). Note that the control unit CNT may further acquire wafer information about the wafer 6 and the bonding environment (temperature, humidity, air pressure, device status, etc.) in addition to the die information and the target amount of bonding strain.

[0040] The target amount of bonding distortion may be specified by the distortion amount of each component such as the magnification component, the third-order component, or the higher-order component, or may be specified by the distortion amount at the location of the wafer 6 to be bonded.

[0041] The control unit CNT acquires, for example, die information and a target amount of bonding strain input by a user via an input unit (user interface) of the bonding apparatus BD. However, the control unit CNT may acquire, as the die information, the thickness or size of the die 51 measured by a die measurement unit of the bonding apparatus BD. Similarly, the control unit CNT may acquire, as the target amount of bonding strain, the shape of the portion to be bonded of the wafer 6 (amount of strain of the portion to be bonded) measured by a wafer measurement unit of the bonding apparatus BD.

[0042] In S102, based on the die information acquired in S101 and the target amount of bonding strain, the control unit CNT calculates bonding control conditions for the bonding operation of bonding the die 51 to the wafer 6. As described above, the bonding control conditions include at least one of the bending amount and bending shape of the die 51, the relative speed between the die 51 and the wafer 6, the friction coefficient of the bonding head 423, and the holding force of the bonding head 423.

[0043] The control unit CNT calculates (functions as a calculation unit) from the die information the bonding shape of the die 51 after bonding the die 51 to the wafer 6, i.e., the bonding control conditions for setting the bonding distortion occurring in the die 51 to a target amount (the bonding shape becomes a predetermined distorted shape). The control unit CNT calculates bonding control conditions that approach the target amount of bonding distortion within the constraints that can be realized by the bonding device BD, for example, using an optimization method such as linear programming or a machine learning method. Note that the bonding control conditions that approach the target amount of bonding distortion mean bonding control conditions that are within a predetermined allowable error (margin) range for the target amount of bonding distortion.

[0044] Furthermore, as shown in FIG. 4, the control unit CNT may calculate bonding control conditions for setting the bonding strain generated in the die 51 to a target amount by using sensitivity that represents the relationship between the die information, the bonding control conditions, and the (amount of) bonding strain generated in the die 51. FIG. 4 shows sensitivity that represents the relationship between the thickness of the die 51, which is the die information, the bending amount of the die 51, which is the bonding control condition, and the magnification component of the (amount of) bonding strain generated in the die 51. The control unit CNT refers to the sensitivity shown in FIG. 4 and obtains, as the bonding control condition, the bending amount of the die 51 corresponding to the target amount of the magnification component of the bonding strain from the thickness of the die 51 acquired as the die information.

[0045] In S103, the control unit CNT causes the wafer 6 carried into the bonding device BD to be held by the wafer stage 43 (wafer chuck 433). The process of holding the wafer 6 on the wafer stage 43 also includes a bonding preparation process for bonding the die 51 to the wafer 6. The bonding preparation process includes, for example, a process of measuring and positioning alignment marks formed on the wafer 6, and a process of measuring and leveling the surface position of the wafer 6.

[0046] In S104, the control unit CNT causes the bonding head 423 to hold the die 51 carried into the bonding device BD. The process of holding the die 51 with the bonding head 423 also includes a bonding preparation process for bonding the die 51 to the wafer 6. The bonding preparation process includes, for example, a process of measuring and positioning an alignment mark formed on the die 51, and a process of measuring and leveling the surface position of the die 51.

[0047] In S105, the control unit CNT bonds the die 51 held by the bonding head 423 in S104 to (the portion to be bonded on) the wafer 6 held by the wafer stage 43 in S103 in accordance with the bonding control conditions calculated in S102 (bonding step). In other words, the control unit CNT controls the bonding operation of bonding the die 51 to the wafer 6 so that the bonded shape of the die 51 after bonding the die 51 to the wafer 6 becomes a predetermined distorted shape.

[0048] In S106, the control unit CNT determines whether all the dies 51 to be bonded to the wafer 6 have been bonded to the wafer 6 (at the bonding target locations). Generally, about 100 dies 51 are bonded to one wafer 6. If all the dies 51 have not been bonded to the wafer 6, the process proceeds to S104, and S104 and S105 are repeated until all the dies 51 have been bonded to the wafer 6. On the other hand, if all the dies 51 have been bonded to the wafer 6, the process proceeds to S107.

[0049] In S107, the control unit CNT unloads the wafer 6 to which all the dies 51 have been bonded from the wafer stage 43 (wafer chuck 433).

[0050] In S108, the control unit CNT determines whether the die 51 has been bonded to all wafers 6 to be processed in the lot. If the die 51 has not been bonded to all wafers 6, the process proceeds to S103, and S103, S104, and S105 are repeated until the die 51 has been bonded to all wafers 6. On the other hand, if the die 51 has been bonded to all wafers 6, the bonding operation is terminated. Generally, 25 wafers 6 are processed as one lot, but multiple lots may be processed consecutively. In this case, the bonding operation of bonding the die 51 to the wafer 6 is repeated according to the same bonding control conditions until the wafer 6 or the die 51 (type) is changed.

[0051] As described above, according to this embodiment, when the die 51 is bent downward into a convex shape and bonded to the wafer 6, the bonding operation can be controlled so that the bonded shape of the die 51 after bonding to the wafer 6 becomes a predetermined distorted shape. Therefore, this embodiment can suppress deviation of the bonding position of the die 51 relative to the wafer 6 while improving the bonding reliability between the die 51 and the wafer 6, which is advantageous in terms of bonding accuracy between the die 51 and the wafer 6.

[0052] In addition, in this embodiment, an example has been described in which the die 51 as the bonded object is bent, but the wafer 6 as the object to be bonded may also be bent, or both the die 51 and the wafer 6 may also be bent.

[0053] Here, with reference to FIG. 5, a specific configuration of the bonding head 423 that bends the die 51 into a downward convex shape will be described. As shown in FIG. 5, the bonding head 423 has a cavity CA formed on the back side of a holding surface HS (chuck) that holds the die 51. A pressure adjustment mechanism (not shown) is connected to the cavity CA. The pressure in the cavity CA can be adjusted via the pressure adjustment mechanism to bend the die 51 held on the holding surface SH. Specifically, by pressurizing the cavity CA, the die 51 can be bent into a shape (a downward convex shape) in which the center of the die 51 protrudes downward (toward the wafer 6) compared to the peripheral portion. Furthermore, by depressurizing the cavity CA, the die 51 can be bent into a shape (an upward convex shape) in which the center of the die 51 protrudes upward (toward the wafer 6) compared to the peripheral portion. The shape of the holding surface SH (chuck) may be deformed in advance, and the bending shape of the die 51 may be adjusted by the pressure in the cavity CA. In addition, by adjusting the thickness between the holding surface SH and the cavity CA, it is possible to change the bending shape of the die 51 to an R shape, a quadratic shape, or other shapes. Therefore, it is preferable to make the configuration of the bonding head 423 selectable (interchangeable) depending on the shape of the die 51 and the target bending shape of the die 51.

[0054] Another example of a specific configuration of the bonding head 423 that bends the die 51 into a downward convex shape is shown in FIGS. 6( a), 6(b), and 6(c). Referring to FIG. 6(a), the bonding head 423 includes a plurality of vacuum suction units 428 that chuck the die 51. As shown in FIG. 6(b), the plurality of vacuum suction units 428 function as a plurality of holding mechanisms that respectively hold a plurality of different locations on the surface 512 of the die 51 opposite to the bonding surface 511 (the surface facing the wafer 6) of the die 51. As shown in FIG. 6(c), the plurality of vacuum suction units 428 can be driven in a horizontal direction (a first direction parallel to the bonding surface 511 of the die 51) and a vertical direction (a second direction intersecting the first direction) to bend the die 51 into a downward convex shape. In particular, in the bonding head 423 shown in FIGS. 6( a) to 6(c), by driving the vacuum suction unit 428 in the horizontal direction to generate distortion in the die 51, the distortion of the die 51 when the die 51 is bonded to the wafer 6 can be reduced. In this embodiment, the bonding head 423 holds the die 51 by vacuum suction. However, the die 51 may also be held by electrostatic force. Furthermore, by individually controlling the direction and amount of driving of each of the multiple vacuum suction units 428, it is possible to adjust the bending shape and amount of bending of the die 51. In this embodiment, as shown in FIGS. 6( a) to 6(c), the bonding head 423 is configured with three vacuum suction units 428. However, in practice, the bonding head 423 can be configured with a large number of vacuum suction units 428 arranged in an array to precisely bend the die 51.

[0055] Second Embodiment 7(a) and 7(b), a second embodiment will be described. Specifically, a bonding method will be described that includes a first bonding step of bonding a first bonded object 51a to a wafer 6 and a second bonding step of bonding a second bonded object 51b to the first bonded object 51a that has been bonded to the wafer 6. In this embodiment, in order to improve bonding reliability, when bonding the first bonded object 51a and the second bonded object 51b, each of the first bonded object 51a and the second bonded object 51b is bent into a downward convex shape (a convex shape toward the wafer 6).

[0056] In this embodiment, first, as shown in Fig. 7(a), bonding control conditions are controlled so that the bonded shape of the first bonded object 51a after bonding the first bonded object 51a to the wafer 6 becomes a predetermined distorted shape, and the first bonded object 51a is bonded to the wafer 6. Note that the predetermined distorted shape is a pincushion shape in Fig. 7(a), but is not limited thereto and may be a barrel shape, a shape having a magnification component, a shape having a skew, a shape having a magnification difference in the vertical and horizontal directions, etc.

[0057] Next, as shown in FIG. 7(b), the second bonded material 51b is bonded to the first bonded material 51a (i.e., the bonded material on the workpiece) bonded to the wafer 6. Specifically, the bonding control conditions are controlled so that the bonded shape of the second bonded material 51b after bonding the second bonded material 51b to the first bonded material 51a on the wafer is the same as the predetermined distorted shape controlled when bonding the first bonded material 51a. Generally, the first bonded material 51a and the second bonded material 51b differ in die thickness, die size, die size, and stress of the semiconductor element formed on the die. Therefore, the bonding control conditions for bonding the second bonded material 51b to the first bonded material 51a are different from the bonding control conditions for bonding the first bonded material 51a to the wafer 6.

[0058] According to this embodiment, it is possible to reduce the displacement of the bonding position of the second bonded object 51b relative to the first bonded object 51a while maintaining high bonding reliability, and to bond the first bonded object 51a and the second bonded object 51b.

[0059] <Third embodiment> 8(a) and 8(b), a third embodiment will be described. Specifically, a bonding method will be described that includes a forming step of forming (manufacturing) a semiconductor element 601 on a wafer 6 and a bonding step of bonding a die 51 to the semiconductor element 601 formed on the wafer 6. In this embodiment, too, in order to improve bonding reliability, when bonding the die 51, the die 51 is bent into a downward convex shape (a convex shape toward the wafer 6 side).

[0060] In this embodiment, first, as shown in Fig. 8(a), semiconductor elements 601 are formed on the wafer 6 to match the distorted shape that the die 51 will have after bonding. Note that in Fig. 8(a), the distorted shape is a pincushion shape, but is not limited to this and may be a barrel shape, a shape having a magnification component, a shape having skew, a shape having a magnification difference in the vertical and horizontal directions, etc. The semiconductor elements 601 (and their shapes) can be distorted by a semiconductor exposure apparatus when patterning is performed.

[0061] 8(b), the die 51 is bonded to the semiconductor element 601 bonded to the wafer 6. Specifically, the bonding control conditions are controlled so that the bonded shape of the die 51 after bonding the die 51 to the semiconductor element 601 on the wafer is the same as the distorted shape (predetermined distorted shape) of the semiconductor element 601, and the die 51 is bonded to the semiconductor element 601. In other words, in this embodiment, the semiconductor element 601 is formed on the wafer 6 so that the shape of the semiconductor element 601 formed on the wafer 6 is the same as the bonded shape (predetermined distorted shape) of the die 51 after bonding to the semiconductor element 601 on the wafer.

[0062] According to this embodiment, it is possible to reduce the deviation of the bonding position of the die 51 relative to the semiconductor element 601 formed on the wafer 6 while maintaining high bonding reliability, and to bond the semiconductor element 601 and the die 51 together.

[0063] <Fourth embodiment> A fourth embodiment will be described with reference to Figures 9(a), 9(b), and 9(c). The bonding method described in this embodiment includes three bonding steps. Specifically, the bonding method in this embodiment includes a first bonding step of bonding a first bonded object 51a to a first substrate 6a and a second bonding step of bonding a second bonded object 51b to a second substrate 6b. In addition to the first and second bonding steps, the bonding method in this embodiment also includes a third bonding step of bonding the first substrate 6a to which the first bonded object 51a has been bonded and the second substrate 6b to which the second bonded object 51b has been bonded.

[0064] In this embodiment, as shown in FIG. 9(a), first, the bonding control conditions are controlled so that the bonded shape of the first bonded material 51a after bonding to the first substrate 6a becomes a predetermined distorted shape. In this manner, a first reconstructed substrate RCS1 is manufactured in which the first bonded material 51a is arranged on the first substrate 6a. While the predetermined distorted shape is a pincushion shape in FIG. 9(a), it is not limited thereto and may be a barrel shape, a shape with a magnification component, a skewed shape, or a shape with a difference in magnification in the vertical and horizontal directions. However, because the first reconstructed substrate RCS1 is ultimately flipped axially symmetrically and bonded to a second reconstructed substrate RCS2 (described later), the predetermined distorted shape is preferably a shape axially symmetric about the flip axis. The reconstructed substrate may be formed by bonding the bonded material to a substrate, sealing it with a molding material, and then removing the substrate. In this case, a step is required in which the molding material deposited on the surface of the bonded product is removed to expose the surface of the bonded product (semiconductor element surface).

[0065] Next, as shown in FIG. 9(b), the bonding control conditions are controlled so that the bonded shape of the second bonded material 51b after bonding to the second substrate 6b is a predetermined distorted shape, and the second bonded material 51b is bonded to the second substrate 6b. Here, the predetermined distorted shape is the same as the distorted shape controlled when bonding the first bonded material 51a to the first substrate 6a. In this manner, a second reconstructed substrate RCS2 is manufactured in which the second bonded material 51b is arranged on the second substrate 6b. Generally, the first bonded material 51a and the second bonded material 51b differ in die thickness, die size, die size, and stress of the semiconductor elements formed on the die. Therefore, the bonding control conditions for bonding the second bonded material 51b to the second substrate 6b are different from the bonding control conditions for bonding the first bonded material 51a to the first substrate 6a.

[0066] 9(c), the first reconfigured substrate RCS1 and the second reconfigured substrate RCS2 are bonded together by being turned over axially symmetrically. Specifically, the first substrate 6a and the second substrate 6b are aligned and bonded together so that the first bonded material 51a on the first substrate and the second bonded material 51b on the second substrate are bonded together.

[0067] According to this embodiment, the first bonded object 51a and the second bonded object 51b can be bonded together while maintaining high bonding reliability and reducing the displacement of the bonding positions between the first bonded object 51a and the second bonded object 51b.

[0068] Fifth Embodiment A manufacturing method for manufacturing an article (such as a semiconductor IC element, a liquid crystal display element, or a MEMS) using the bonding apparatus BD in the above-described embodiment will now be described. The article is manufactured through a preparation process in which a bonding material and an article to be bonded are prepared, a bonding process in which the bonding material is bonded to the article to be bonded using the bonding apparatus BD (a bonding method (bonding operation)), and a manufacturing process in which the article is manufactured by processing the article to which the bonding material has been bonded through other well-known processes. These other well-known processes include probing, dicing, bonding, packaging, and the like. The method for manufacturing an article in this embodiment is advantageous over conventional methods in at least one of article performance, quality, productivity, and production cost.

[0069] The disclosure of the present specification includes the following joining apparatus, joining method, and method for manufacturing an article.

[0070] (Item 1) A joining device that performs a joining operation of joining an object to be joined, a driving unit that drives the joining object to be joined to the workpiece; a control unit that controls the joining operation so that a joining shape of the joined object after joining the joined object to the workpiece becomes a predetermined distorted shape; A joining device comprising:

[0071] (Item 2) The control unit an acquisition unit that acquires the predetermined distortion shape; a calculation unit that calculates a control condition for the joining operation to make the joining shape of the joined object the predetermined distorted shape acquired by the acquisition unit; and 2. The joining device according to item 1, comprising:

[0072] (Item 3) 3. The joining device according to item 2, wherein the joining operation includes an operation of joining the joining object to the object in a state where the joining object is bent into a convex shape toward the object.

[0073] (Item 4) 4. The joining device according to item 3, wherein the control conditions include at least one of a bending amount of the joined material when the joined material is joined to the workpiece, a bending shape of the joined material when the joined material is joined to the workpiece, a relative speed between the joined material and the workpiece when the joined material is joined to the workpiece, and a holding force of the joined material when the joined material is joined to the workpiece.

[0074] (Item 5) 5. The bonding apparatus according to any one of items 2 to 4, wherein the calculation unit calculates the control condition based on at least one of a thickness of the bonded objects, a size of the bonded objects, a material of the bonded objects, and a stress of a semiconductor element formed on the bonded objects.

[0075] (Item 6) a first holding part that holds the bonded object; a second holding part that holds the object to be welded, The drive unit drives at least one of the first holding unit and the second holding unit. 6. The joining device according to any one of items 1 to 5,

[0076] (Item 7) 7. The joining device according to item 6, wherein the first holding section bends the joining material into a convex shape toward the workpiece when joining the joining material to the workpiece.

[0077] (Item 8) The first holding portion is a plurality of holding mechanisms for holding different points on a surface of the bonded object opposite to a bonding surface on the side of the object to be bonded, each of the plurality of holding mechanisms is driven in a first direction parallel to the joining surface and in a second direction intersecting the first direction, thereby bending the joined object into a convex shape toward the workpiece. 8. The joining device according to item 7,

[0078] (Item 9) the bonded object is a die including a semiconductor element, The object to be bonded is a substrate. 9. The joining device according to any one of items 1 to 8, wherein:

[0079] (Item 10) the bonded object is a die including a semiconductor element, The object to be bonded is a semiconductor element formed on a substrate. 9. The joining device according to any one of items 1 to 8, wherein:

[0080] (Item 11) the bonded object is a first bonded object bonded to a first reconfigurable substrate, The object to be bonded is a second bonded object bonded to a second reconstructed substrate different from the first reconstructed substrate. 9. The joining device according to any one of items 1 to 8, wherein:

[0081] (Item 12) A joining method for joining an object to be joined, comprising the steps of: a preparation step of preparing the bonded object and the object to be bonded; a joining step of joining the joining material to the workpiece so that a joining shape of the joining material after joining the joining material to the workpiece becomes a predetermined distorted shape; A bonding method comprising:

[0082] (Item 13) a first joining step of joining the first joining object to the workpieces so that a joining shape of the first joining object after joining the first joining object to the workpieces becomes a predetermined distorted shape; a second joining step of joining the second joined object to the first joined object on the object to be joined so that the joined shape of the second joined object after being joined to the first joined object on the object to be joined becomes the predetermined distorted shape; A bonding method comprising:

[0083] (Item 14) forming a semiconductor element on a substrate; a bonding step of bonding the bonded article to the semiconductor element on the substrate so that a bonded shape of the bonded article after bonding the bonded article to the semiconductor element on the substrate has a predetermined distorted shape; Including, In the forming step, the semiconductor element is formed on the substrate so that the shape of the semiconductor element formed on the substrate has the predetermined distorted shape. A joining method characterized by:

[0084] (Item 15) a first bonding step of bonding the first bonded object to the first substrate so that a bonded shape of the first bonded object after bonding the first bonded object to the first substrate has a predetermined distorted shape; a second bonding step of bonding the second bonded object to the second substrate so that a bonded shape of the second bonded object after bonding the second bonded object to the second substrate becomes the predetermined distorted shape; a third bonding step of bonding the first substrate and the second substrate together such that the first bonded material on the first substrate and the second bonded material on the second substrate are bonded together; A bonding method comprising:

[0085] (Item 16) a preparation step of preparing a joining object and an object to be joined; a joining step of joining the joined object to the workpiece using the joining device according to claim 1; a manufacturing step of manufacturing an article by treating the article to which the bonded article is bonded; A method for manufacturing an article, comprising:

[0086] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0087] BD: Bonding device CNT: Control unit 4: Bonding unit 6: Wafer 43: Wafer stage 51: Die 423: Bonding head

Claims

1. A joining device that performs a joining operation of joining an object to be joined, a driving unit that drives the joining object to be joined to the workpiece; a control unit that controls the joining operation so that a joining shape of the joined object after joining the joined object to the workpiece becomes a predetermined distorted shape; A joining device comprising:

2. The control unit an acquisition unit that acquires the predetermined distortion shape; a calculation unit that calculates a control condition for the joining operation to make the joining shape of the joined object the predetermined distorted shape acquired by the acquisition unit; and The joining device according to claim 1 , further comprising:

3. 3. The joining apparatus according to claim 2, wherein the joining operation includes an operation of joining the joining object to the object in a state where the joining object is bent into a convex shape toward the object.

4. 4. The joining device according to claim 3, wherein the control conditions include at least one of a bending amount of the joined material when the joined material is joined to the workpiece, a bending shape of the joined material when the joined material is joined to the workpiece, a relative speed between the joined material and the workpiece when the joined material is joined to the workpiece, and a holding force of the joined material when the joined material is joined to the workpiece.

5. 3. The bonding apparatus according to claim 2, wherein the calculation unit calculates the control condition based on at least one of a thickness of the bonded objects, a size of the bonded objects, a material of the bonded objects, and a stress of a semiconductor element formed on the bonded objects.

6. a first holding portion that holds the bonded object; a second holding portion that holds the object to be welded, The drive unit drives at least one of the first holding unit and the second holding unit.

2. The joining device according to claim 1.

7. 7. The joining device according to claim 6, wherein the first holding portion bends the joining material into a convex shape toward the workpiece when joining the joining material to the workpiece.

8. The first holding portion is a plurality of holding mechanisms for holding different points on a surface of the bonded object opposite to a bonding surface on the side of the object to be bonded, each of the plurality of holding mechanisms is driven in a first direction parallel to the joining surface and in a second direction intersecting the first direction, thereby bending the joined object into a convex shape toward the workpiece. The joining device according to claim 7 .

9. the bonded object is a die including a semiconductor element, The object to be bonded is a substrate.

2. The joining device according to claim 1.

10. the bonded object is a die including a semiconductor element, The object to be bonded is a semiconductor element formed on a substrate.

2. The joining device according to claim 1.

11. the bonded object is a first bonded object bonded to a first reconfigurable substrate, The object to be bonded is a second bonded object bonded to a second reconstructed substrate different from the first reconstructed substrate.

2. The joining device according to claim 1.

12. A joining method for joining an object to be joined, comprising the steps of: a preparation step of preparing the bonded object and the object to be bonded; a joining step of joining the joining material to the workpiece so that a joining shape of the joining material after joining the joining material to the workpiece becomes a predetermined distorted shape; A bonding method comprising:

13. a first joining step of joining the first joining object to the workpiece so that a joining shape of the first joining object after joining the first joining object to the workpiece becomes a predetermined distorted shape; a second joining step of joining the second joined object to the first joined object on the workpiece so that a joining shape of the second joined object after joining the second joined object to the first joined object on the workpiece becomes the predetermined distorted shape; A bonding method comprising:

14. forming a semiconductor element on a substrate; a bonding step of bonding the bonded article to the semiconductor element on the substrate so that a bonded shape of the bonded article after bonding the bonded article to the semiconductor element on the substrate has a predetermined distorted shape; Including, In the forming step, the semiconductor element is formed on the substrate so that the shape of the semiconductor element formed on the substrate has the predetermined distorted shape. A joining method characterized by:

15. a first bonding step of bonding the first bonded object to the first substrate so that a bonded shape of the first bonded object after bonding the first bonded object to the first substrate has a predetermined distorted shape; a second bonding step of bonding the second bonded object to the second substrate so that a bonded shape of the second bonded object after bonding the second bonded object to the second substrate becomes the predetermined distorted shape; a third bonding step of bonding the first substrate and the second substrate together such that the first bonded material on the first substrate and the second bonded material on the second substrate are bonded together; A bonding method comprising:

16. a preparation step of preparing a joining object and an object to be joined; a joining step of joining the joining object to the workpiece using the joining device according to claim 1; a manufacturing step of manufacturing an article by treating the article to which the bonded article is bonded; A method for manufacturing an article, comprising:

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