Semiconductor device

Abstract

To ensure insulation between conductors.SOLUTION: A semiconductor device A10 comprises: a first die pad 11; a second die pad 12; a first switching element 20; a second switching element 30; a first connecting member 51; a sealing resin 70; and a plurality of leads 41-47 that protrude from a first resin side surface 703 facing a Y-axis direction and extend in the Y-axis direction. The plurality of leads 41-47 include a first control lead 41, a second control lead 47, a first drive lead 43, a second drive lead 45, an output lead 44, a first source lead 42, and a second source lead 46. The sealing resin 70 has a recess 707 that extends along the Y-axis direction from the first resin side surface 703 between the adjacent leads 42-45 between the first source lead 42 and the second source lead 46. The recess 707 is arranged to be separated from each of the adjacent leads 42-45 in the X-axis direction.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor devices. [Background technology]

[0002] Conventionally, a semiconductor device includes a lead frame including a die pad and multiple leads, one transistor mounted on the die pad, wires connecting each electrode of the transistor to the leads, and a sealing resin that seals the transistor and the wires (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-174951

[0004] [overview] This semiconductor device is used, for example, in an inverter circuit or a DC-DC converter circuit. These circuits are configured by connecting two semiconductor devices mounted on a mounting substrate with wiring conductors on the mounting substrate. The wiring conductors on the mounting substrate electrically connect, for example, the drain electrode of a transistor mounted on one semiconductor device to the source electrode of a transistor mounted on another semiconductor device. Multiple semiconductor devices mounted on a mounting substrate are arranged at a certain distance from each other for mounting and heat dissipation. As a result, the conductors (leads and wiring conductors) between the electrodes are long, resulting in large parasitic inductance. Parasitic inductance hinders fast switching. For this reason, there is a demand for reducing parasitic inductance in semiconductor devices. Furthermore, because large currents flow through the conductors between electrodes, there is a demand for ensuring insulation between the conductors when multiple conductors are provided.

[0005] A semiconductor device according to one aspect of the present disclosure includes a first die pad having a first main surface, a second die pad disposed apart from the first die pad in a first direction parallel to the first main surface and having a second main surface facing the same direction as the first main surface, a first element main surface mounted on the first main surface and facing the same direction as the first main surface, a first element back surface facing the opposite side to the first element main surface, a first main surface electrode and a first control electrode provided on the first element main surface, and a first back surface electrode provided on the first element back surface, a first switching element having the first back surface electrode connected to the first main surface, and a second control electrode provided on the second main surface. a second switching element mounted on a first die pad and having a second element main surface facing the same direction as the second main surface, a second element back surface facing the opposite side to the second element main surface, a second main surface electrode and a second control electrode provided on the second element main surface, and a second back surface electrode provided on the second element back surface, the second back surface electrode being connected to the second main surface; a first connection member connecting the first main surface electrode of the first switching element to the second die pad; and a plurality of resin side surfaces intersecting planes parallel to the first main surface and the second main surface, a sealing resin that seals the die pad, the second die pad, and the first connection member; and a plurality of leads that are arranged in the first direction, that protrude from one of the plurality of resin side surfaces of the sealing resin that faces a second direction intersecting the first direction, and that extend in the second direction, wherein the plurality of leads include a first control lead that is arranged at an end of the sealing resin on a side where the first die pad is arranged and connected to the first control electrode of the first switching element, a second control lead that is arranged at an end of the sealing resin on a side where the second die pad is arranged and connected to the second control electrode of the second switching element, a first drive lead that is connected to the first back surface electrode of the first switching element, a second drive lead that is connected to the second main surface electrode of the second switching element, an output lead that is connected to the second die pad, a first source lead that is arranged closer to the second die pad than the first control lead and connected to the first main surface electrode of the first switching element, and a second source lead that is arranged closer to the first die pad than the second control lead and connected to the second main surface electrode of the second switching element.the sealing resin has recesses extending from a side surface of the first resin along the second direction between adjacent leads between the first source lead and the second source lead, and the recesses are arranged spaced apart from the adjacent leads in the first direction.

[0006] Another aspect of the present disclosure provides a semiconductor device comprising: a first die pad having a first main surface; a second die pad disposed apart from the first die pad in a first direction parallel to the first main surface and having a second main surface facing the same direction as the first main surface; a first element main surface mounted on the first main surface and facing the same direction as the first main surface; a first element back surface facing the opposite side to the first element main surface; a first main surface electrode and a first control electrode provided on the first element main surface; and a first back surface electrode provided on the first element back surface, a first switching element having the first back surface electrode connected to the first main surface; a second switching element mounted on the main surface, the second switching element having a second element main surface facing the same direction as the second main surface, a second element back surface facing the opposite side to the second element main surface, a second main surface electrode and a second control electrode provided on the second element main surface, and a second back surface electrode provided on the second element back surface, the second back surface electrode being connected to the second main surface; a first connection member connected to the first main surface electrode of the first switching element; and a plurality of resin side surfaces intersecting planes parallel to the first main surface and the second main surface, the first switching element, the second switching element, the first die pad, and a front die pad; a sealing resin that seals the second die pad and the first connection member; a first lead group including a plurality of leads protruding from a first resin side surface among the plurality of resin side surfaces that faces a second direction intersecting with the first direction; and a second lead group including a plurality of leads protruding from a second resin side surface that faces a direction opposite to the first resin side surface, wherein the first main surface electrode of the first switching element is electrically connected to the second die pad via the first connection member, and the plurality of leads constituting the first lead group include a first drive lead connected to the first back surface electrode of the first switching element, a second drive lead connected to the second main surface electrode of the second switching element, and an output lead connected to the second die pad, and the plurality of leads constituting the second lead group include a first control lead connected to the first control electrode of the first switching element, a second control lead connected to the second control electrode of the second switching element, and are arranged closer to a center of the sealing resin than the first control lead, and a first source lead connected to the first main surface electrode of the first switching element, and are arranged closer to a center of the sealing resin than the second control lead,and a second source lead connected to the second main surface electrode of the second switching element, and the sealing resin has recesses extending from a side surface of the first resin along the second direction between the first drive lead and the second drive lead and between the second drive lead and the output lead, and the recesses are arranged spaced apart from each of the adjacent leads in the first direction. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment. [Figure 2] FIG. 2 is a plan view showing the semiconductor device of the first embodiment. [Figure 3] FIG. 3 is a side view showing the semiconductor device of the first embodiment. [Figure 4] FIG. 4 is a plan view showing a comparative example of the semiconductor device according to the first embodiment. [Figure 5] FIG. 5 is a perspective view showing a semiconductor device according to a modified example of the first embodiment. [Figure 6] FIG. 6 is a perspective view showing a semiconductor device according to the second embodiment. [Figure 7] FIG. 7 is a plan view showing the semiconductor device of the second embodiment. [Figure 8] FIG. 8 is a side view showing the semiconductor device of the second embodiment. [Figure 9] FIG. 9 is a plan view showing the operation of the semiconductor device of the second embodiment. [Figure 10] FIG. 10 is a perspective view showing a semiconductor device according to the third embodiment. [Figure 11] FIG. 11 is a plan view showing a semiconductor device according to the third embodiment. [Figure 12] FIG. 12 is a side view showing the semiconductor device of the third embodiment. [Figure 13] FIG. 13 is a cross-sectional view taken along line 13-13 in FIG. [Figure 14] FIG. 14 is a cross-sectional view taken along line 14-14 in FIG. [Figure 15]FIG. 15 is a perspective view showing a semiconductor device according to the fourth embodiment. [Figure 16] FIG. 16 is a plan view showing a semiconductor device according to the fourth embodiment. [Figure 17] FIG. 17 is a side view showing the semiconductor device of the fourth embodiment. [Figure 18] FIG. 18 is a cross-sectional view taken along line 18-18 in FIG. [Figure 19] FIG. 19 is a perspective view showing a semiconductor device according to the fifth embodiment. [Figure 20] FIG. 20 is a plan view showing a semiconductor device according to the fifth embodiment. [Figure 21] FIG. 21 is a cross-sectional view taken along line 21-21 in FIG. [Figure 22] FIG. 22 is a plan view showing a semiconductor device according to a modified example. [Figure 23] FIG. 23 is a plan view showing a semiconductor device according to a modified example. [Figure 24] FIG. 24 is a plan view showing a semiconductor device according to a modified example. [Figure 25] FIG. 25 is a plan view showing a semiconductor device according to a modified example. [Figure 26] FIG. 26 is a plan view showing a semiconductor device according to a modified example. [Figure 27] FIG. 27 is a perspective view showing a semiconductor device according to the sixth embodiment. [Figure 28] FIG. 28 is a plan view showing a semiconductor device according to the sixth embodiment. [Figure 29] FIG. 29 is a side view showing the semiconductor device of the sixth embodiment. [Figure 30] FIG. 30 is a cross-sectional view taken along line 30-30 in FIG. [Figure 31] FIG. 31 is a cross-sectional view taken along line 31-31 in FIG. [Figure 32] FIG. 32 is a perspective view showing a semiconductor device according to a modification of the sixth embodiment. [Figure 33] FIG. 33 is a plan view showing a semiconductor device according to a modification of the sixth embodiment. [Figure 34]FIG. 34 is a perspective view showing a semiconductor device according to the seventh embodiment. [Figure 35] FIG. 35 is a plan view showing a semiconductor device according to the seventh embodiment. [Figure 36] FIG. 36 is a side view showing the semiconductor device of the seventh embodiment. [Figure 37] FIG. 37 is a cross-sectional view taken along line 35-35 in FIG. [Figure 38] FIG. 38 is a plan view showing a semiconductor device according to a modification of the seventh embodiment. [Figure 39] FIG. 39 is a plan view showing a semiconductor device according to a modification of the seventh embodiment. [Figure 40] FIG. 40 is a plan view showing a semiconductor device according to a modification of the seventh embodiment. [Figure 41] FIG. 41 is a perspective view showing a semiconductor device according to a modification of the seventh embodiment. [Figure 42] FIG. 42 is a plan view showing a semiconductor device according to a modification of the seventh embodiment.

[0008] [Detailed explanation] Hereinafter, embodiments and modified examples will be described with reference to the drawings. The embodiments and modified examples shown below are examples of configurations and methods for embodying the technical ideas, and are not intended to limit the materials, shapes, structures, arrangements, dimensions, etc. of each component to those described below. Various modifications can be made to each of the following embodiments and modified examples. Furthermore, the following embodiments and modified examples can be combined with each other within the scope of technical compatibility.

[0009] In this specification, "component A is connected to component B" includes cases where component A and component B are directly physically connected, as well as cases where component A and component B are indirectly connected via other components that do not affect the electrical connection state.

[0010] Similarly, "component C is provided between component A and component B" includes cases where component A and component C, or component B and component C, are directly connected, as well as cases where component A and component C, or component B and component C, are indirectly connected via another component that does not affect the electrical connection state.

[0011] (First embodiment) A semiconductor device A10 of the first embodiment will be described with reference to FIGS. As shown in FIGS. 1 and 2, the semiconductor device A10 includes a first die pad 11, a second die pad 12, a first switching element 20, a second switching element 30, a plurality of leads 41 to 47, and a sealing resin .

[0012] [Sealing resin] The sealing resin 70 is formed so as to cover the first die pad 11, the second die pad 12, the first switching element 20, and the second switching element 30. The sealing resin 70 is also formed so as to cover a portion of the plurality of leads 41 to 47.

[0013] The sealing resin 70 is formed in a flat rectangular parallelepiped shape. In this specification, "rectangular parallelepiped" includes a rectangular parallelepiped with chamfered corners and ridges, and a rectangular parallelepiped with rounded corners and ridges. Some or all of the constituent surfaces may be uneven, or the constituent surfaces may be curved or composed of multiple surfaces.

[0014] The sealing resin 70 is made of a synthetic resin having electrical insulation properties. In one example, the sealing resin 70 is an epoxy resin. The synthetic resin constituting the sealing resin 70 is colored, for example, black. In FIGS. 1 and 2, the sealing resin 70 is indicated by a dashed line, and components within the sealing resin 70 are indicated by solid lines. In the following description, the thickness direction of the sealing resin 70 is referred to as the thickness direction Z, one direction perpendicular to the thickness direction Z is referred to as the horizontal direction X, and a direction perpendicular to the thickness direction Z and the horizontal direction X is referred to as the vertical direction Y. The horizontal direction X corresponds to the first direction, and the vertical direction Y corresponds to the second direction.

[0015] The sealing resin 70 has a resin main surface 701, a resin back surface 702, and first to fourth resin side surfaces 703 to 706. The resin main surface 701 and the resin back surface 702 face opposite each other in the thickness direction Z. The first to fourth resin side surfaces 703 to 706 face in any direction intersecting with the resin main surface 701 and the resin back surface 702. The first resin side surface 703 and the second resin side surface 704 face opposite each other in the vertical direction Y. The third resin side surface 705 and the fourth resin side surface 706 face opposite each other in the horizontal direction X.

[0016] 2 is a view of the semiconductor device A10 viewed from the side of the resin main surface 701 of the sealing resin 70. As shown in Fig. 2, when the semiconductor device A10 is viewed from the thickness direction Z, the shape of the sealing resin 70 is a rectangle whose long side direction is the horizontal direction X and whose short side direction is the vertical direction Y. The first resin side surface 703 and the second resin side surface 704 are side surfaces that extend along the horizontal direction X, and the third resin side surface 705 and the fourth resin side surface 706 are side surfaces that extend along the vertical direction Y.

[0017] [First die pad, second die pad] The first die pad 11 and the second die pad 12 are formed in the shape of a rectangular plate. The first die pad 11 and the second die pad 12 are made of, for example, Cu (copper). In this embodiment, "made of Cu" means that the die pad is made of Cu or an alloy containing Cu. Note that the term "made of Cu" also includes a die pad having a plating layer formed on part or the entire surface.

[0018] The first die pad 11 has a main surface 111, a back surface 112, and a first side surface 113 to a fourth side surface 116. The main surface 111 and the back surface 112 face opposite each other in the thickness direction Z. The main surface 111 of the first die pad 11 faces the same side as the resin main surface 701 of the sealing resin 70. The first side surface 113 to the fourth side surface 116 face either the horizontal direction X or the vertical direction Y. In this embodiment, the first side surface 113 and the second side surface 114 face opposite each other in the vertical direction Y, and the third side surface 115 and the fourth side surface 116 face opposite each other in the horizontal direction X.

[0019] The second die pad 12 has a main surface 121, a back surface 122, and a first side surface 123 to a fourth side surface 126. The main surface 121 and the back surface 122 face opposite each other in the thickness direction Z. The main surface 121 of the second die pad 12 faces the same side as the resin main surface 701 of the sealing resin 70. The first side surface 123 to the fourth side surface 126 face either the horizontal direction X or the vertical direction Y. In this embodiment, the first side surface 123 and the second side surface 124 face opposite each other in the vertical direction Y, and the third side surface 125 and the fourth side surface 126 face opposite each other in the horizontal direction X.

[0020] The first die pad 11 and the second die pad 12 are arranged so that their respective main surfaces 111, 121 are at the same position in the thickness direction Z. The first die pad 11 and the second die pad 12 have the same thickness. The thickness of the first die pad 11 and the second die pad 12 is 1 mm or more and 3 mm or less. The thickness of the first die pad 11 and the second die pad 12 is preferably, for example, 2 mm or more and 3 mm or less. The back surface 112 of the first die pad 11 and the back surface 122 of the second die pad 12 are at the same position in the thickness direction Z.

[0021] The first die pad 11 and the second die pad 12 are arranged along the horizontal direction X. The fourth side surface 116 of the first die pad 11 and the third side surface 125 of the second die pad 12 face each other. The distance L12 between the first die pad 11 and the second die pad 12 is smaller than the thickness of the first die pad 11 and the second die pad 12, and is, for example, 1 mm or more and 3 mm or less. The first die pad 11 and the second die pad 12 are arranged in the vertical direction Y so that their first side surfaces 113, 123 are at the same position.

[0022] [First switching element, second switching element] The first switching element 20 is mounted on the main surface 111 of the first die pad 11. The second switching element 30 is mounted on the main surface 121 of the second die pad 12. The first switching element 20 and the second switching element 30 are silicon carbide (SiC) chips. In this embodiment, the first switching element 20 and the second switching element 30 are SiCMOSFETs (metal-oxide-semiconductor field-effect transistors). The first switching element 20 and the second switching element 30 are elements capable of high-speed switching.

[0023] The first switching element 20 is formed in a flat plate shape. Specifically, in a plan view, the first switching element 20 has, for example, a square shape. As shown in FIGS. 2 and 3 , the first switching element 20 has an element main surface 201, an element back surface 202, and a first element side surface 203 to a fourth element side surface 206. The element main surface 201 and the element back surface 202 face in opposite directions in the thickness direction Z. The element main surface 201 faces the same direction as the resin main surface 701. That is, the element main surface faces in the same direction as the main surface 111 of the first die pad 11. The element back surface 202 faces opposite the main surface 111 of the first die pad 11. The first element side surface 203 and the second element side surface 204 face in opposite directions in the vertical direction Y, and the third element side surface 205 and the fourth element side surface 206 face in opposite directions in the horizontal direction X. The first element side surface 203 faces in the same direction as the first side surface 113 of the first die pad 11, and the second element side surface 204 faces in the same direction as the second side surface 114 of the first die pad 11. The third element side surface 205 faces in the same direction as the third side surface 115 of the first die pad 11, and the fourth element side surface 206 faces in the same direction as the fourth side surface 116 of the first die pad 11.

[0024] The first switching element 20 has a first principal surface electrode 21 and a first control electrode 22 on the element principal surface 201, and a first back surface electrode 23 on the element back surface 202. The first principal surface electrode 21 is a source electrode. In this embodiment, the first principal surface electrode 21 includes a main source electrode 211 and control source electrodes 212 and 213. The first control electrode 22 is a gate electrode. The control source electrodes 212 and 213 are, for example, driver source electrodes electrically connected to a circuit (driver) that drives the first switching element 20. In this embodiment, the first control electrode 22 is disposed in a portion closer to the third element side surface 205. The first control electrode 22 is disposed in the center of the portion closer to the third element side surface 205 in the vertical direction Y. The main source electrode 211 of the first principal surface electrode 21 is disposed to be aligned with the first control electrode 22 in the horizontal direction X. The control source electrodes 212 and 213 are arranged to sandwich the first control electrode 22 in the vertical direction Y. The first back surface electrode 23 is a drain electrode. The first back surface electrode 23 is electrically connected to the first die pad 11 by solder 81.

[0025] 2, the first switching element 20 is disposed on the main surface 111 of the first die pad 11 in a region closer to the first side surface 113 in the vertical direction Y. The first switching element 20 is also disposed in the center of the first die pad 11 in the horizontal direction X.

[0026] The second switching element 30 is formed in a flat plate shape. Specifically, in a plan view, the second switching element 30 has, for example, a square shape. As shown in FIG. 2, the second switching element 30 has an element main surface 301, an element back surface 302, and a first element side surface 303 to a fourth element side surface 306. The element main surface 301 and the element back surface 302 face in opposite directions in the thickness direction Z. The element main surface 301 faces the resin main surface 701. That is, the element main surface faces in the same direction as the main surface 121 of the second die pad 12. The element back surface 302 faces opposite the main surface 121 of the second die pad 12. The first element side surface 303 and the second element side surface 304 face in opposite directions in the vertical direction Y, and the third element side surface 305 and the fourth element side surface 306 face in opposite directions in the horizontal direction X. The first element side surface 303 faces in the same direction as the first side surface 123 of the second die pad 12, and the second element side surface 304 faces in the same direction as the second side surface 124 of the second die pad 12. The third element side surface 305 faces in the same direction as the third side surface 125 of the second die pad 12, and the fourth element side surface 306 faces in the same direction as the fourth side surface 126 of the second die pad 12.

[0027] The second switching element 30 has a second principal surface electrode 31 and a second control electrode 32 on the element principal surface 301, and a second back surface electrode 33 on the element back surface 302. The second principal surface electrode 31 is a source electrode. In this embodiment, the second principal surface electrode 31 includes a main source electrode 311 and control source electrodes 312 and 313. The second control electrode 32 is a gate electrode. The control source electrodes 312 and 313 are, for example, driver source electrodes electrically connected to a circuit (driver) that drives the second switching element 30. In this embodiment, the second control electrode 32 is disposed in a portion closer to the fourth element side surface 306. The second control electrode 32 is disposed in the center of the portion closer to the fourth element side surface 306 in the vertical direction Y. The main source electrode 311 of the second principal surface electrode 31 is disposed to be aligned with the second control electrode 32 in the horizontal direction X. The control source electrodes 312 and 313 are arranged to sandwich the second control electrode 32 in the vertical direction Y. The second back surface electrode 33 is a drain electrode. The second back surface electrode 33 is electrically connected to the second die pad 12 by solder 82.

[0028] 2, the second switching element 30 is disposed on the main surface 121 of the second die pad 12, in a region closer to the first side surface 123 in the vertical direction Y. The second switching element 30 is also disposed in the center of the second die pad 12 in the horizontal direction X.

[0029] [First connecting member] The first principal surface electrode 21 (main source electrode 211) of the first switching element 20 is connected to the second die pad 12 by a first wire 51 serving as a first connecting member. In this embodiment, as shown in FIGS. 1 and 2, the first principal surface electrode 21 (main source electrode 211) of the first switching element 20 is connected to the second die pad 12 by five first wires 51. The number of first wires 51 is set, for example, according to the drive current that can be passed through the semiconductor device A10. The first wires 51 are arranged in the vertical direction Y and extend along the horizontal direction X. When viewed from the thickness direction Z, the first wires 51 are wired so as to be parallel to each other.

[0030] The first wire 51 is made of, for example, Al (aluminum). "Made of Al" means that the first wire 51 is made of Al or an alloy containing Al. The first wire 51 has a circular cross section perpendicular to the length direction near the center. The cross section of the first wire 51 can have any shape. The wire diameter of the first wire 51 at the circular cross section is, for example, 0.1 mm or more and 0.4 mm or less.

[0031] [Lead] 1 and 2, the semiconductor device A10 has a plurality of (seven in this embodiment) leads 41 to 47. The first lead 41 to the seventh lead 47 extend along the vertical direction Y. The first lead 41 to the seventh lead 47 protrude from a first resin side surface 703 of the sealing resin 70.

[0032] The first lead 41 to the seventh lead 47 are arranged along the lateral direction X. In this embodiment, the first lead 41 to the seventh lead 47 are arranged in this order from the third resin side surface 705 toward the fourth resin side surface 706 of the sealing resin 70. The lateral direction X is the direction in which the first die pad 11 and the second die pad 12 are arranged. Therefore, the first lead 41 to the seventh lead 47 are arranged along the arrangement direction of the first die pad 11 and the second die pad 12. The first lead 41 to the seventh lead 47 are made of Cu.

[0033] [First Lead] As shown in FIG. 2, the first lead 41 has a pad portion 411, a base portion 412, and a substrate connection portion 413. The pad portion 411 is arranged away from the first die pad 11 toward the first resin side surface 703 of the sealing resin 70 in the vertical direction Y. The pad portion 411 is a wire bonding portion to which a wire 61 is connected. The pad portion 411 is connected to the first control electrode 22 of the first switching element 20 by the wire 61. In other words, the first lead 41 is a first control lead connected to the first control electrode (gate electrode) 22 of the first switching element 20. In the following description, the term "first control lead 41" may be used instead of the first lead 41. The wire 61 is made of, for example, Al. The wire diameter of the wire 61 is, for example, 0.04 mm or more and 0.1 mm or less.

[0034] The base 412 extends from the pad portion 411 in the vertical direction Y and protrudes from the first resin side surface 703 of the sealing resin 70. The substrate connection portion 413 extends from the tip of the base 412 in the vertical direction Y. The substrate connection portion 413 is inserted into a component hole in a mounting board and connected to the conductor wiring of the mounting board by soldering (both not shown). As shown in FIG. 2, the base 412 is formed to be wider in the horizontal direction X than the substrate connection portion 413. In the horizontal direction X, the base 412 is formed to protrude more than the substrate connection portion 413 in the direction from the fourth resin side surface 706 toward the third resin side surface 705 of the sealing resin 70.

[0035] In the first control lead 41 and the second lead 42 to seventh lead 47 described later, the widths of the substrate connection portions 413, 423, 433, 443, 453, 463, and 473 are the same. The width of the substrate connection portion 413 is, for example, 1.2 mm, and the width of the base portion 412 is, for example, 2.6 mm. As shown in FIGS. 1 and 3, in this embodiment, the thickness of the first control lead 41 is equal to or less than the thickness of the first die pad 11. The thickness of the first control lead 41 is, for example, 0.6 mm.

[0036] [Second Lead] As shown in FIG. 2, the second lead 42 has a pad portion 421, a base portion 422, and a substrate connection portion 423. The pad portion 421 is disposed away from the first die pad 11 in the vertical direction Y toward the first resin side surface 703 of the sealing resin 70. The pad portion 421 is a wire bonding portion to which a wire 62 is connected. The pad portion 421 is connected to the control source electrode 312 of the first switching element 20 by the wire 62. In other words, the second lead 42 is a first source lead connected to the source electrode of the first switching element 20. In the following description, the first source lead 42 may be used instead of the second lead 42. The wire 62 is made of, for example, Al. The wire diameter of the wire 62 is, for example, 0.04 mm or more and 0.1 mm or less.

[0037] The base 422 extends in the vertical direction Y from the pad portion 421 and protrudes from the first resin side surface 703 of the sealing resin 70. The substrate connection portion 423 extends in the vertical direction Y from the tip of the base 422. The substrate connection portion 423 is inserted into a component hole in a mounting board and connected to the conductor wiring of the mounting board by soldering (both are not shown). As shown in FIG. 2, in this embodiment, the base 422 of the first source lead 42 is formed to have the same width as the substrate connection portion 423. The thickness of the first source lead 42 is equal to or less than the thickness of the first die pad 11, and is, for example, 0.6 mm.

[0038] [Third Lead] 2, the third lead 43 has a connection portion 431, a base portion 432, and a substrate connection portion 433. The connection portion 431 is connected to the first die pad 11. The first die pad 11 is connected to the first back surface electrode (drain electrode) 23 of the first switching element 20. In other words, the third lead 43 is a first drive lead (drain lead) connected to the first back surface electrode (drain electrode) 23 of the first switching element 20. In the following description, the first drive lead 43 may be used instead of the third lead 43. In this embodiment, the first drive lead 43 is integral with the first die pad 11. The first drive lead 43 and the first die pad 11 constitute an integral first lead frame 14.

[0039] The base 432 extends from the connection portion 431 in the vertical direction Y and protrudes from the first resin side surface 703 of the sealing resin 70. The substrate connection portion 433 extends from the tip of the base 432 in the vertical direction Y. The substrate connection portion 433 is inserted into a component hole in a mounting board and connected to a conductor wiring of the mounting board by soldering (both not shown). As shown in FIG. 2, the base 432 is formed to have a width in the horizontal direction X wider than that of the substrate connection portion 433. In the horizontal direction X, the base 432 is formed to protrude more toward the first source lead 42 than the substrate connection portion 433. The width of the substrate connection portion 433 is, for example, 1.2 mm, and the width of the base 432 is 2.6 mm. As shown in FIG. 1, in this embodiment, the thickness of the first drive lead 43 is equal to or less than the thickness of the first die pad 11, for example, 0.6 mm.

[0040] [4th lead] As shown in FIG. 2 , the fourth lead 44 has a connection portion 441, a base portion 442, and a substrate connection portion 443. The connection portion 441 is connected to the second die pad 12. The second die pad 12 is connected to the second back surface electrode (drain electrode) 33 of the second switching element 30. The second die pad 12 is also connected to the first main surface electrode 21 (main source electrode 211) of the first switching element 20. In other words, the fourth lead 44 is an output lead connected to the first main surface electrode 21 (main source electrode 211) of the first switching element 20 and the second back surface electrode (drain electrode) 33 of the second switching element 30. In the following description, the output lead 44 may be used instead of the fourth lead 44. In this embodiment, the output lead 44 is integral with the second die pad 12. The output lead 44 and the second die pad 12 constitute an integral second lead frame 15.

[0041] The base 442 extends from the connection portion 441 in the vertical direction Y and protrudes from the first resin side surface 703 of the sealing resin 70. The substrate connection portion 443 extends from the tip of the base 442 in the vertical direction Y. As shown in FIG. 2, the base 442 is formed to be wider in the horizontal direction X than the substrate connection portion 443. In the horizontal direction X, the base 442 is formed to protrude more toward the first drive lead 43 than the substrate connection portion 443. In this embodiment, the widths of the base 442 and the substrate connection portion 443 of the output lead 44 and the thickness of the output lead 44 are equal to or less than the thickness of the second die pad 12, and are, for example, 0.6 mm.

[0042] [5th ​​lead] As shown in FIG. 2, the fifth lead 45 has a pad portion 451, a base portion 452, and a substrate connection portion 453. The pad portion 451 is disposed away from the second die pad 12 toward the first resin side surface 703 of the sealing resin 70 in the vertical direction Y. The pad portion 451 extends along the first side surface 123 of the second die pad 12. The pad portion 451 is a wire bonding portion to which second wires 52 serving as second connecting members are connected. The pad portion 451 is connected to the second principal surface electrode 31 (main source electrode 311) of the second switching element 30 by, for example, a plurality of second wires 52. Five second wires 52 are shown in FIG. 2. The second wires 52 are arranged in the horizontal direction X. When viewed from the thickness direction Z, the second wires 52 are wired so as to be parallel to each other. That is, the fifth lead 45 is a second drive lead (source lead) connected to the second principal surface electrode 31 (main source electrode 311) of the second switching element 30. In the following description, the second drive lead 45 may be used instead of the fifth lead 45. The second wire 52 is made of, for example, Al. The wire diameter of the second wire 52 is, for example, not less than 0.1 mm and not more than 0.4 mm.

[0043] 2, the base 452 extends from the pad portion 451 in the vertical direction Y and protrudes from the first resin side surface 703 of the sealing resin 70. The substrate connection portion 453 extends from the tip of the base 452 in the vertical direction Y. As shown in FIG. 2, the base 452 is formed to be wider in the horizontal direction X than the substrate connection portion 453. In the horizontal direction X, the base 452 is formed to protrude more toward the sixth lead 46 than the substrate connection portion 453. In this embodiment, the widths of the base 452 and the substrate connection portion 453 of the second drive lead 45 and the thickness of the second drive lead 45 are equal to or less than the thickness of the second die pad 12, and are, for example, 0.6 mm.

[0044] [6th lead] As shown in FIG. 2 , the sixth lead 46 has a pad portion 461, a base portion 462, and a substrate connection portion 463. The pad portion 461 is disposed away from the second die pad 12 toward the first resin side surface 703 of the sealing resin 70 in the vertical direction Y. The pad portion 461 is a wire bonding portion to which a wire 63 is connected. The pad portion 461 is connected to the control source electrode 313 of the second switching element 30 by, for example, one wire 63. In other words, the sixth lead 46 is a source lead connected to the control source electrode 313 of the second switching element 30. In the following description, the second source lead 46 may be used instead of the sixth lead 46. The wire 63 is made of, for example, Al. The wire diameter of the wire 63 is, for example, 0.04 mm or more and 0.1 mm or less.

[0045] The base 462 extends from the pad portion 461 in the vertical direction Y and protrudes from the first resin side surface 703 of the sealing resin 70. The substrate connection portion 463 extends from the tip of the base 462 in the vertical direction Y. As shown in FIG. 2, in this embodiment, the base 462 of the second source lead 46 is formed to have the same width as the substrate connection portion 463. In this embodiment, the widths of the base 462 and the substrate connection portion 463 of the second source lead 46 and the thickness of the second source lead 46 are equal to or less than the thickness of the second die pad 12, and are, for example, 0.6 mm.

[0046] [7th lead] As shown in FIG. 2, the seventh lead 47 has a pad portion 471, a base portion 472, and a substrate connection portion 473. The pad portion 471 is disposed away from the second die pad 12 toward the first resin side surface 703 of the sealing resin 70 in the vertical direction Y. The pad portion 471 is a wire bonding portion to which a wire 64 is connected. The pad portion 471 is connected to the second control electrode 32 of the second switching element 30 by the wire 64. In other words, the seventh lead 47 is a second control lead connected to the second control electrode (gate electrode) 32 of the second switching element 30. In the following description, the second control lead 47 may be used instead of the seventh lead 47. The wire 64 is made of, for example, Al. The wire diameter of the wire 64 is, for example, 0.04 mm or more and 0.1 mm or less.

[0047] The base 472 extends from the pad portion 471 in the vertical direction Y and protrudes from the first resin side surface 703 of the sealing resin 70. The substrate connection portion 473 extends from the base 472 in the vertical direction Y. As shown in FIG. 2, the base 472 is formed to have a wider width in the horizontal direction X than the substrate connection portion 473. In the horizontal direction X, the base 472 is formed to protrude more than the substrate connection portion 473 in the direction from the third resin side surface 705 toward the fourth resin side surface 706 of the sealing resin 70. In this embodiment, the widths of the base 472 and the substrate connection portion 473 of the second control lead 47 and the thickness of the second control lead 47 are equal to or less than the thickness of the second die pad 12, and are, for example, 0.6 mm. In this embodiment, the first lead 41 to the seventh lead 47 have the same thickness.

[0048] In this embodiment, the first source lead 42 to the second source lead 46 are arranged such that the interval between any two adjacent leads in the horizontal direction X is wider than the interval between the first control lead 41 and the first source lead 42 and the interval between the second source lead 46 and the second control lead 47. In this embodiment, the first source lead 42 to the second source lead 46 are arranged such that the intervals between their base portions 422, 432, 442, 452, and 462 are equal. As shown in FIG. 2, the sealing resin 70 has recesses 707 extending from the first resin side surface 703 along the vertical direction Y between the first source lead 42 to the second source lead 46.

[0049] (action) First, a comparative example to this embodiment will be described. FIG. 4 shows a comparative example of this embodiment. In this comparative example, an inverter circuit or the like is configured using two semiconductor devices 90a and 90b. Each of the semiconductor devices 90a and 90b includes one switching element 91 and leads 921-924 electrically connected to the gate electrode 911, control source electrode 912, main source electrode 913, and back electrode (drain electrode) 914 of the switching element 91, respectively. Each electrode 911-914 is connected to the leads 921-924, respectively. The inverter circuit is configured by electrically connecting the back electrode (drain electrode) 914 of the switching element 91 of one semiconductor device 90a to the main source electrode 913 of the switching element 91 of the other semiconductor device 90b via external wiring OP. The external wiring OP is, for example, a conductor wiring of a mounting substrate on which the semiconductor devices 90a and 90b are mounted. In FIG. 4, the tips of the leads 924 and 923 are shown connected to the external wiring OP.

[0050] A lead 923 of one semiconductor device 90b is connected to a conductor wiring that supplies a low potential voltage, and a lead 924 of the other semiconductor device 90a is connected to a conductor wiring that supplies a high potential voltage. The two semiconductor devices 90a, 90b and an external wiring OP are interposed between the leads 923 and 924. Due to the parasitic inductance of this external wiring OP, the inductances in the lead 924 (drain lead), lead 923 (output lead), and lead 923 (source lead) become large.

[0051] The semiconductor device A10 of this embodiment includes a first switching element 20 and a second switching element 30 within a single sealing resin 70. The first main surface electrode 21 (main source electrode 211) of the first switching element 20 is connected to the second die pad 12 on which the second switching element 30 is mounted by a first wire 51 serving as a first connecting member. Therefore, in the semiconductor device A10 of this embodiment, the conductor distances between the first drive lead 43 (first drive lead), the output lead 44 (output lead), and the second drive lead 45 (second drive lead) are shortened, and the inductance of the semiconductor device A10 is smaller than that of the comparative example, approximately half that of the comparative example. In this way, the inductance can be reduced in the semiconductor device A10 of this embodiment.

[0052] (effect) As described above, this embodiment provides the following advantages. (1-1) The semiconductor device A10 includes a first switching element 20 and a second switching element 30 within a single sealing resin 70. The first main surface electrode 21 (main source electrode 211) of the first switching element 20 is connected to the second die pad 12 on which the second switching element 30 is mounted by a first wire 51 serving as a first connecting member. Therefore, in the semiconductor device A10, the conductor distances between the first drive lead 43 (first drive lead), the output lead 44 (output lead), and the second drive lead 45 (second drive lead) are shortened, and inductance can be reduced.

[0053] (1-2) The thickness of the first die pad 11 and the second die pad 12 is 1 mm or more and 3 mm or less. It is preferable that the first die pad 11 and the second die pad 12 are thick. Heat generated by the operation of the first switching element 20 is transferred from the first switching element 20 to the first die pad 11. The thicker the first die pad 11, the easier it is for heat to be transferred from the first switching element 20 to the first die pad 11. In other words, the heat dissipation from the first switching element 20 can be improved, and the thermal resistance of the first switching element 20 can be reduced. Similarly, the thermal resistance of the second switching element 30 can be reduced.

[0054] (1-3) The multiple first wires 51 serving as the first connecting members are wired so as to be parallel to one another when viewed from the thickness direction Z. Therefore, in the process of connecting the multiple first wires 51, the multiple first wires 51 can be connected in the same operation without changing the angle of the wires or the loop height of the wires, facilitating manufacturing.

[0055] (1-4) The main source electrode 311 of the second switching element 30 is connected to the pad portion 451 of the second drive lead 45 by a plurality of second wires 52. The second wires 52 are wired so as to be parallel to one another when viewed from the thickness direction Z. Therefore, in the process of connecting the plurality of second wires 52, the plurality of wires 62 can be connected in the same operation without changing the wire angle or wire loop height, facilitating manufacturing.

[0056] (1-5) The first source lead 42 to the second source lead 46 are arranged such that the interval between any two adjacent leads in the horizontal direction X is wider than the interval between the first control lead 41 and the first source lead 42 and the interval between the second source lead 46 and the second control lead 47. In this embodiment, the first source lead 42 to the second source lead 46 are arranged such that the intervals between the base portions 422, 432, 442, 452, and 462 of the first source lead 42 to the second source lead 46 are equal. Therefore, the intervals between adjacent leads in the first source lead 42 to the second source lead 46 are longer, ensuring insulation.

[0057] (1-6) The sealing resin 70 has recesses 707 extending from the first resin side surface 703 along the vertical direction Y between the first source lead 42 to the second source lead 46. The recesses 707 increase the distance (creepage distance) along the surface of the sealing resin 70 between the first source lead 42 and the first drive lead 43, ensuring insulation between the first source lead 42 and the first drive lead 43. Similarly, the creepage distance between the leads 43 and 44, between the leads 44 and 45, and between the leads 45 and 46 that sandwich each recess 707 increases, ensuring insulation.

[0058] (Modification of the first embodiment) The first embodiment can be modified and implemented as follows. The configurations of the first switching element 20 and the second switching element 30 may be modified as appropriate. For example, in the first switching element 20, the first principal surface electrode 21 is divided into the main source electrode 211 and the control source electrodes 212, 213. However, a switching element having an undivided first principal surface electrode may be used. In this case, the first wire 51 and the wire 62 shown in FIGS. 1 and 2 are connected to a single first principal surface electrode. Similarly, in the second switching element 30, the second principal surface electrode 31 includes the main source electrode 311 and the control source electrodes 312, 313. However, a switching element having an undivided second principal surface electrode may be used. In this case, the second wire 52 and the wire 63 shown in FIGS. 1 and 2 are connected to a single first principal surface electrode.

[0059] The thickness of each lead may be changed as appropriate. For example, the semiconductor device A11 shown in FIG. 5 includes a first lead 41 to a seventh lead 47 that are all the same thickness. The thicknesses of the third lead 43 to the fifth lead 47 are equal to the thicknesses of the first die pad 11 and the second die pad 12. Note that in FIG. 5, the first lead 41, the second lead 42, the sixth lead 46, and the seventh lead 47 are all the same thickness as the third lead 43 to the fifth lead 45. However, either one of the first lead 41 or the second lead 42, or either one of the sixth lead 46 or the seventh lead 47 may have a thickness different from the third lead 43 to the fifth lead 45. Furthermore, at least one of the third lead 43 to the fifth lead 45 may have a thickness different from the thickness of the first die pad 11 or the second die pad 12.

[0060] The number of first wires 51 serving as first connecting members connecting the first switching element 20 and the second die pad 12 may be four or less, or six or more. The number of second wires 52 serving as second connecting members connecting the second switching element 30 and the fifth lead 45 may be four or less, or six or more.

[0061] Some or all of the recesses 707 provided in the sealing resin 70 may be omitted. (Second embodiment) A semiconductor device A20 of the second embodiment will be described with reference to FIGS.

[0062] The semiconductor device A20 of the second embodiment differs from the semiconductor device A10 of the first embodiment described above mainly in the connection between the fourth lead and the fifth lead. In the following description, components common to the semiconductor device A10 of the first embodiment are denoted by the same reference numerals, and their description may be omitted.

[0063] As shown in FIGS. 6 to 8, the semiconductor device A20 of this embodiment includes a plurality of leads 41, 42, 43, 44a, 45a, 46, and 47 that protrude from a first resin side surface 703 of the sealing resin .

[0064] [4th lead] The fourth lead 44a has a pad portion 444, a base portion 442, and a substrate connection portion 443. The pad portion 444 is disposed away from the second die pad 12 toward the first resin side surface 703 of the sealing resin 70 in the vertical direction Y. The pad portion 444 extends along the first side surface 123 of the second die pad 12. The pad portion 444 is a wire bonding portion to which second wires 52 serving as second connecting members are connected. The pad portion 444 is connected to the second principal surface electrode 31 (main source electrode 311) of the second switching element 30 by, for example, a plurality of second wires 52. Five second wires 52 are shown in FIGS. 6 and 7 . In other words, the fourth lead 44a is a second drive lead (source lead) connected to the second principal surface electrode 31 (main source electrode 311) of the second switching element 30.

[0065] [5th ​​lead] The fifth lead 45a has a connection portion 454, a base portion 452, and a substrate connection portion 453. The connection portion 454 is connected to the second die pad 12. The second die pad 12 is connected to the second back surface electrode 33 (drain electrode) of the second switching element 30. The second die pad 12 is also connected to the first main surface electrode 21 (main source electrode 211) of the first switching element 20. In other words, the fifth lead 45a is an output lead connected to the first main surface electrode 21 (main source electrode 211) of the first switching element 20 and the second back surface electrode 33 (drain electrode) of the second switching element 30. In this embodiment, the fifth lead 45a is integral with the second die pad 12. The fifth lead 45a and the second die pad 12 constitute an integral second lead frame 15a.

[0066] (action) Next, the operation of the semiconductor device A20 of the second embodiment will be described. In the semiconductor device A20 of this embodiment, the first drive lead 43 (third lead), the second drive lead 44a (fourth lead), and the output lead 45a (fifth lead) are arranged in this order in the horizontal direction X. That is, the first drive lead 43 and the second drive lead 44a are arranged side by side. A high potential voltage is supplied to the first drive lead 43, and a low potential voltage is supplied to the second drive lead 44a.

[0067] 9 shows currents when the semiconductor device A20 of this embodiment is operated. When the first switching element 20 is turned on and the second switching element 30 is turned off, a first current I1 flows from the first drive lead 43 to the output lead 45a. Conversely, when the first switching element 20 is turned off and the second switching element 30 is turned on, a second current I2 flows from the output lead 45a to the second drive lead 44a. When the semiconductor device A20 is operated with a high-speed control signal (e.g., 1 MHz), the first current I1 and the second current I2 flow alternately in opposite directions relative to the semiconductor device A20 in the adjacent first drive lead 43 and second drive lead 44a. The magnetic flux generated by these first current I1 and second current I2 reduces mutual inductance, further reducing parasitic inductance in the semiconductor device A20.

[0068] (effect) As described above, this embodiment provides the following advantages in addition to the advantages of the first embodiment.

[0069] (2-1) In the semiconductor device A20, the first drive lead 43 (third lead), the second drive lead 44a (fourth lead), and the output lead 45a (fifth lead) are arranged in this order in the horizontal direction X. The first current I1 flowing from the first drive lead 43 to the output lead 45a and the second current I2 flowing from the output lead 45a to the second drive lead 44a can further reduce the inductance in the semiconductor device A20.

[0070] (Third embodiment) A semiconductor device A30 of the third embodiment will be described with reference to FIGS. The semiconductor device A30 of the third embodiment has a first connecting member and a second connecting member different from those of the semiconductor device A10 of the first embodiment described above. In the following description, the same reference numerals are used to designate components common to those of the semiconductor device A10 of the first embodiment, and their description may be omitted.

[0071] 10 to 14, the semiconductor device A30 of this embodiment includes a first clip 53 as a first connecting member, and a second clip 54 as a second connecting member.

[0072] The first switching element 20 is connected to the second die pad 12 by a first clip 53. The first clip 53 is a conductive plate-like member. The first clip 53 is formed by bending a plate-like conductive plate. In this embodiment, the first clip 53 is strip-shaped and extends in the horizontal direction X. The first clip 53 connects the first principal surface electrode 21 (main source electrode 211) of the first switching element 20 to the second die pad 12. As shown in FIG. 13 , one end of the first clip 53 is connected to the main source electrode 211 of the first switching element 20 by solder 83, and the other end of the first clip 53 is connected to the second die pad 12 by solder 84. The first clip 53 is made of Cu. The thickness of the first clip 53 is 0.05 mm or more and 1.0 mm or less, and preferably 0.5 mm or more.

[0073] As shown in FIGS. 10, 11, and 14, the second switching element 30 is connected to the fifth lead 45 (second drive lead) by a second clip 54. The second clip 54 is a conductive plate-like member. The second clip 54 is formed by bending a plate-like conductive plate. In this embodiment, the second clip 54 has a strip shape extending in the vertical direction Y. The second clip 54 connects the second principal surface electrode 31 (main source electrode 311) of the second switching element 30 to a pad portion 451 of the fifth lead 45. As shown in FIG. 14, one end of the second clip 54 is connected to the main source electrode 311 of the second switching element 30 by solder 85, and the other end of the second clip 54 is connected to the pad portion 451 of the fifth lead 45 by solder 86. The second clip 54 is made of Cu. The thickness of the second clip 54 is 0.05 mm or more and 1.0 mm or less, and preferably 0.5 mm or more.

[0074] (effect) As described above, this embodiment provides the following advantages in addition to the advantages of the first embodiment.

[0075] (3-1) The first switching element 20 and the second die pad 12 are connected by the first clip 53. Therefore, it is possible to handle a large current compared to when the first switching element 20 and the second die pad 12 are connected by multiple wires.

[0076] (3-2) Compared to connecting the first switching element 20 and the second die pad 12 with multiple wires, the first switching element 20 and the second die pad 12 can be connected with one first clip 53, thereby reducing the number of manufacturing steps.

[0077] (3-3) The second switching element 30 and the fifth lead 45 are connected by the second clip 54. Therefore, it is possible to handle a larger current than when the second switching element 30 and the fifth lead 45 are connected by multiple wires.

[0078] (3-4) Compared to connecting the second switching element 30 and the fifth lead 45 with multiple wires, the second switching element 30 and the fifth lead 45 can be connected with one second clip 54, thereby reducing the number of manufacturing steps.

[0079] (Fourth embodiment) A semiconductor device A40 of the fourth embodiment will be described with reference to FIGS. The semiconductor device A40 of the fourth embodiment differs from the semiconductor device A30 of the third embodiment described above mainly in the connection between the fourth lead and the fifth lead. In the following description, the same reference numerals will be used to designate components that are common to the semiconductor device A30 of the third embodiment, and their description may be omitted.

[0080] As shown in FIGS. 15 and 16, the semiconductor device A40 of this embodiment includes a plurality of leads 41, 42, 43, 44a, 45a, 46, and 47 that protrude from a first resin side surface 703 of the sealing resin .

[0081] [4th lead] The fourth lead 44a has a pad portion 444, a base portion 442, and a substrate connection portion 443. The pad portion 444 is arranged away from the second die pad 12 toward the first resin side surface 703 of the sealing resin 70 in the vertical direction Y. The pad portion 444 extends along the first side surface 123 of the second die pad 12. The pad portion 444 is connected to the second principal surface electrode 31 (main source electrode 311) of the second switching element 30 by a second clip 54a serving as a second connecting member. The fourth lead 44a is a second drive lead (source lead) connected to the second principal surface electrode 31 (main source electrode 311) of the second switching element 30.

[0082] The second clip 54a is a conductive plate-like member. The second clip 54a is formed by bending a plate-like conductive plate. The second clip 54a has a lead connection portion 541, an electrode connection portion 542, and a linking portion 543. The lead connection portion 541 extends in the horizontal direction X, similar to the pad portion 444 of the fourth lead 44a, and is connected to the pad portion 444 by solder 86. The electrode connection portion 542 is formed in a rectangular shape corresponding to the second principal surface electrode 31 (main source electrode 311) of the second switching element 30, and is connected to the second principal surface electrode 31 by solder 85. The linking portion 543 connects the lead connection portion 541 and the electrode connection portion 542. The linking portion 543 extends from the lead connection portion 541 in the vertical direction Y. The linking portion 543 is connected to an end of the electrode connection portion 542 closer to the first die pad 11. 18 , in this embodiment, the second clip 54a is formed between the second switching element 30 and the third side surface 125 of the second die pad 12 so that the connecting portion 543 is parallel to the main surface 121 of the second die pad 12.

[0083] [5th ​​lead] The fifth lead 45a has a connection portion 454, a base portion 452, and a substrate connection portion 453. The connection portion 454 is connected to the second die pad 12. The second die pad 12 is connected to the second back surface electrode 33 (drain electrode) of the second switching element 30. The second die pad 12 is also connected to the first main surface electrode 21 (main source electrode 211) of the first switching element 20. In other words, the fifth lead 45a is an output lead connected to the first main surface electrode 21 (main source electrode 211) of the first switching element 20 and the second back surface electrode 33 (drain electrode) of the second switching element 30. In this embodiment, the fifth lead 45a is integral with the second die pad 12. The fifth lead 45a and the second die pad 12 constitute an integral second lead frame 15a.

[0084] (effect) As described above, this embodiment provides the following advantages in addition to the advantages of the third embodiment.

[0085] (4-1) As in the second embodiment, the first drive lead 43 (third lead), the second drive lead 44a (fourth lead), and the output lead 45a (fifth lead) are arranged in this order in the horizontal direction X. The inductance in the semiconductor device A40 can be reduced by a first current I1 (see FIG. 9) flowing from the first drive lead 43 to the output lead 45a and a second current I2 (see FIG. 9) flowing from the output lead 45a to the second drive lead 44a.

[0086] (4-2) The second clip 54a connecting the second switching element 30 and the second drive lead 44a has a lead connection portion 541 connected to the fourth lead 44a, an electrode connection portion 542 connected to the second switching element 30, and a linking portion 543 connecting the lead connection portion 541 and the electrode connection portion 542. The linking portion 543 is arranged parallel to the second die pad 12. Therefore, the adjacent portions increase between the first drive lead 43 (third lead) and the output lead 45a (fifth lead) and between the output lead 45a and the second drive lead 44a (fourth lead), thereby further reducing inductance.

[0087] (Fifth embodiment) A semiconductor device A50 of the fifth embodiment will be described with reference to FIGS. The semiconductor device A50 of the fifth embodiment differs from the semiconductor device A40 of the fourth embodiment in the position of the switching element. In the following description, the same reference numerals will be used to designate components that are common to the semiconductor device A40 of the fourth embodiment, and their description may be omitted.

[0088] 19 and 20, in the semiconductor device A50 of this embodiment, the first switching element 20 and the second switching element 30 are arranged near the center of the sealing resin 70. The arrangement of the first switching element 20 and the second switching element 30 will be described in detail.

[0089] 20, the first switching element 20 is disposed on the main surface 111 of the first die pad 11 closer to the first side surface 113 in the vertical direction Y. As shown in FIGS. 20 and 21, the first switching element 20 is disposed on the main surface 111 of the first die pad 11 closer to the fourth side surface 116 of the first die pad 11 in the horizontal direction X. The fourth side surface 116 faces the third side surface 125 of the second die pad 12. That is, the first switching element 20 is disposed on the first die pad 11 closer to the second die pad 12. This allows the length of the first clip 53 connecting the first switching element 20 and the second die pad 12 to be shortened. In this embodiment, when viewed in the thickness direction Z, the distance (first distance) Lx1 from the fourth side surface 116 of the first die pad 11 to the fourth element side surface 206 of the first switching element 20 is equal to or greater than the thickness of the first die pad 11.

[0090] 20, the second switching element 30 is disposed on the main surface 121 of the second die pad 12, closer to the first side surface 123 in the vertical direction Y. As shown in FIGS. 20 and 21, the second switching element 30 is disposed on the main surface 121 of the second die pad 12, closer to the third side surface 125 of the second die pad 12 in the horizontal direction X. In other words, the second switching element 30 is disposed on the second die pad 12, closer to the first die pad 11. This shortens the length of the electrical path from the first switching element 20 to the second switching element 30. In this embodiment, the distance (second distance) Lx2 from the third side surface 125 of the second die pad 12 to the third element side surface 305 of the second switching element 30 is equal to or greater than the thickness of the second die pad 12, as viewed in the thickness direction Z.

[0091] (action) Next, the operation of the semiconductor device A50 of the fifth embodiment will be described. The first switching element 20 is disposed closer to the fourth side surface 116 of the first die pad 11 in the lateral direction X. The second switching element 30 is disposed closer to the third side surface 125 of the second die pad 12 in the lateral direction X. This shortens the length of the electrical path from the first switching element 20 to the second switching element 30, thereby reducing the parasitic inductance in the electrical path between the elements.

[0092] 21 , heat generated by the operation of the first switching element 20 is transferred from the first switching element 20 to the first die pad 11. In the first die pad 11, the heat is transferred while diffusing from the main surface 111 toward the back surface 112 of the first die pad 11, as indicated by the arrows in FIG. 21 . The heat is then transferred from each surface of the first die pad 11 to the sealing resin 70. Similarly, heat generated by the operation of the second switching element 30 is transferred from the second switching element 30 to the second die pad 12, and is then transferred while diffusing from the main surface 121 toward the back surface 122 of the second die pad 12. The heat is then transferred from each surface of the second die pad 12 to the sealing resin 70.

[0093] The closer the first switching element 20 is to the fourth side surface 116 of the first die pad 11, the more heat is transferred from the fourth side surface 116 to the sealing resin 70. Similarly, the closer the second switching element 30 is to the third side surface 125 of the second die pad 12, the more heat is transferred from the third side surface 125 to the sealing resin 70. Therefore, due to a temperature rise in the resin portion 70a of the sealing resin 70 between the fourth side surface 116 and the third side surface 125, the efficiency of heat transfer from the fourth side surface 116 to the resin portion 70a decreases, and the efficiency of heat transfer from the third side surface 125 to the resin portion 70a decreases. In other words, the heat dissipation efficiency for the first switching element 20 and the second switching element 30 decreases.

[0094] However, as described above, in the semiconductor device A50 of this embodiment, the distance Lx1 from the fourth side surface 116 of the first die pad 11 to the fourth element side surface 206 of the first switching element 20 is equal to or greater than the thickness of the first die pad 11. The distance Lx2 from the third side surface 125 of the second die pad 12 to the third element side surface 305 of the second switching element 30 is equal to or greater than the thickness of the second die pad 12. This makes it possible to suppress a decrease in the heat dissipation efficiency of the first switching element 20 and the second switching element 30.

[0095] Note that the decrease in heat dissipation efficiency can also be suppressed by increasing the distance L12 between the first die pad 11 and the second die pad 12, that is, by separating the first die pad 11 and the second die pad 12 from each other. However, by separating the first die pad 11 and the second die pad 12, the sealing resin 70 becomes larger, that is, the external dimensions of the semiconductor device become larger. On the other hand, by setting the positions of the first switching element 20 and the second switching element 30 as described above, the decrease in heat dissipation efficiency can be suppressed and an increase in the size of the semiconductor device A50 can be suppressed.

[0096] (effect) As described above, this embodiment provides the following advantages in addition to the advantages of the fourth embodiment.

[0097] (5-1) The first switching element 20 is disposed on the first die pad 11 closer to the second die pad 12, and the second switching element 30 is disposed on the second die pad 12 closer to the first die pad 11. This makes it possible to shorten the length of the electrical path from the first switching element 20 to the second switching element 30, thereby further reducing the parasitic inductance in the electrical path between the elements.

[0098] (5-2) The distance Lx1 from the fourth side surface 116 of the first die pad 11 to the fourth element side surface 206 of the first switching element 20 is equal to or greater than the thickness of the first die pad 11. This makes it possible to suppress a decrease in the heat dissipation efficiency of the first die pad 11 with respect to the first switching element 20.

[0099] (5-3) The distance Lx2 from the third side surface 125 of the second die pad 12 to the third element side surface 305 of the second switching element 30 is equal to or greater than the thickness of the second die pad 12. This makes it possible to suppress a decrease in the heat dissipation efficiency of the second die pad 12 with respect to the second switching element 30.

[0100] (Example of change) The above-described embodiments and modifications can be implemented with the following modifications: The above-described embodiments and modifications can be implemented in combination with the following modifications within the scope of technical inconsistency.

[0101] 22, the semiconductor device A61 includes two first switching elements 20 mounted on the first die pad 11 and connected in parallel, and two second switching elements 30 mounted on the second die pad 12 and connected in parallel. By including two first switching elements 20 and two second switching elements 30 as in the semiconductor device A61, the amount of current passed by the semiconductor device A61 can be increased. Three or more first switching elements 20 may be mounted on the first die pad 11, and three or more second switching elements 30 may be mounted on the second die pad 12. The number of switching elements to be mounted is determined depending on the amount of current passed by the semiconductor device A61.

[0102] The shapes of the components that make up the semiconductor device may be changed as appropriate. 23 to 26 show examples of modified shapes of the lead and the second connecting member. For example, as in a semiconductor device A62 shown in FIG. 23, the width of the base 442 of the fourth lead 44a (output lead) may be wider than the width of the base 432 of the third lead 43 and the width of the base 452 of the fifth lead 45a.

[0103] 24, the width of each of the base portions 432, 442, 452 may be wider than the width of the base portion 412 of the first lead 41 and the width of the base portion 472 of the seventh lead 47.

[0104] Also, as in a semiconductor device A64 shown in FIG. 25, the width of the second clip 54a (second connecting member) may be increased. Furthermore, as in the semiconductor device A65 shown in FIG. 26, by using, for example, Si elements for the first switching element 20 and the second switching element 30, the base 442 of the fourth lead 44a can be brought closer to the base 432 of the third lead 43 and the base 452 of the fifth lead 45a, thereby reducing inductance.

[0105] (Sixth embodiment) A semiconductor device A70 of the sixth embodiment will be described with reference to FIGS. As shown in Figures 27 and 28, the semiconductor device A70 has a first die pad 11, a second die pad 12, a first lead group 1020 (leads 1021 to 1023), a second lead group 1030 (leads 1031 to 1034), first switching elements 40a, 40b, second switching elements 50a, 50b, a first connecting member 1061, a second connecting member 1062, wires 71 to 76, and a sealing resin 900.

[0106] [Sealing resin] The sealing resin 900 is formed so as to cover the first die pad 11, the second die pad 12, the first switching elements 40a, 40b, the second switching elements 50a, 50b, the first connecting member 1061, the second connecting member 1062, and the wires 71 to 76. The sealing resin 900 is also formed so as to cover parts of the first lead group 1020 (leads 1021 to 1023) and the second lead group 1030 (leads 1031 to 1034).

[0107] The sealing resin 900 is formed in a flat rectangular parallelepiped shape. In this specification, "rectangular parallelepiped" includes a rectangular parallelepiped with chamfered corners and ridges, and a rectangular parallelepiped with rounded corners and ridges. Some or all of the constituent surfaces may be uneven, or the constituent surfaces may be curved or composed of multiple surfaces.

[0108] The sealing resin 900 is made of a synthetic resin having electrical insulation properties. In one example, the sealing resin 900 is an epoxy resin. The synthetic resin constituting the sealing resin 900 is colored, for example, black. In Figures 27 and 28, the sealing resin 900 is indicated by a dashed line, and components within the sealing resin 900 are indicated by solid lines. In the following description, the thickness direction of the sealing resin 900 is referred to as the thickness direction Z, one direction perpendicular to the thickness direction Z is referred to as the horizontal direction X, and a direction perpendicular to the thickness direction Z and the horizontal direction X is referred to as the vertical direction Y. The horizontal direction X corresponds to the first direction, and the vertical direction Y corresponds to the second direction.

[0109] The sealing resin 900 has a resin main surface 901, a resin back surface 902, and first to fourth resin side surfaces 903 to 906. The resin main surface 901 and the resin back surface 902 face in opposite directions in the thickness direction Z. The first to fourth resin side surfaces 903 to 906 face in any direction intersecting with the resin main surface 901 and the resin back surface 902. The first resin side surface 903 and the second resin side surface 904 face in opposite directions in the vertical direction Y. The third resin side surface 905 and the fourth resin side surface 906 face in opposite directions in the horizontal direction X.

[0110] 28 is a view of the semiconductor device A70 viewed from the side of a resin main surface 901 of the sealing resin 900. As shown in Fig. 28, when the semiconductor device A70 is viewed from the thickness direction Z, the shape of the sealing resin 900 is a rectangle whose long side direction is the horizontal direction X and whose short side direction is the vertical direction Y. The first resin side surface 903 and the second resin side surface 904 are side surfaces that extend along the horizontal direction X, and the third resin side surface 905 and the fourth resin side surface 906 are side surfaces that extend along the vertical direction Y.

[0111] [First die pad, second die pad] The first die pad 11 and the second die pad 12 are formed in the shape of a rectangular plate. The first die pad 11 and the second die pad 12 are made of, for example, Cu (copper). In this embodiment, "made of Cu" means that the die pad is made of Cu or an alloy containing Cu. Note that the term "made of Cu" also includes a die pad having a plating layer formed on part or the entire surface.

[0112] The first die pad 11 has a main surface 111, a back surface 112, and a first side surface 113 to a fourth side surface 116. The main surface 111 and the back surface 112 face opposite each other in the thickness direction Z. The main surface 111 of the first die pad 11 faces the same side as the resin main surface 901 of the sealing resin 900. The first side surface 113 to the fourth side surface 116 face either the horizontal direction X or the vertical direction Y. In this embodiment, the first side surface 113 and the second side surface 114 face opposite each other in the vertical direction Y, and the third side surface 115 and the fourth side surface 116 face opposite each other in the horizontal direction X.

[0113] The second die pad 12 has a main surface 121, a back surface 122, and a first side surface 123 to a fourth side surface 126. The main surface 121 and the back surface 122 face opposite each other in the thickness direction Z. The main surface 121 of the second die pad 12 faces the same side as the resin main surface 901 of the sealing resin 900. The first side surface 123 to the fourth side surface 126 face either the horizontal direction X or the vertical direction Y. In this embodiment, the first side surface 123 and the second side surface 124 face opposite each other in the vertical direction Y, and the third side surface 125 and the fourth side surface 126 face opposite each other in the horizontal direction X.

[0114] The first die pad 11 and the second die pad 12 are arranged so that their respective main surfaces 111, 121 are at the same position in the thickness direction Z. The first die pad 11 and the second die pad 12 have the same thickness. The thickness of the first die pad 11 and the second die pad 12 is 1 mm or more and 3 mm or less. The thickness of the first die pad 11 and the second die pad 12 is preferably, for example, 2 mm or more and 3 mm or less. The back surface 112 of the first die pad 11 and the back surface 122 of the second die pad 12 are at the same position in the thickness direction Z.

[0115] The first die pad 11 and the second die pad 12 are arranged along the horizontal direction X. The fourth side surface 116 of the first die pad 11 and the third side surface 125 of the second die pad 12 face each other. The distance L12 between the first die pad 11 and the second die pad 12 is smaller than the thickness of the first die pad 11 and the second die pad 12, and is, for example, 1 mm or more and 3 mm or less. The first die pad 11 and the second die pad 12 are arranged in the vertical direction Y so that their first side surfaces 113, 123 are at the same position.

[0116] [Lead] As shown in FIGS. 27 and 28, the semiconductor device A70 has a first lead group 1020 and a second lead group 1030. The first lead group 1020 is composed of a plurality of leads 1021 to 1023 (three in this embodiment) protruding from a first resin side surface 903 of the sealing resin 900. The second lead group 1030 is composed of a plurality of leads 1031 to 1034 (four in this embodiment) protruding from a second resin side surface 904 of the sealing resin 900. The leads 1021 to 1023 of the first lead group 1020 are arranged along the horizontal direction X and extend along the vertical direction Y. The leads 1031 to 1034 of the second lead group 1030 are arranged along the horizontal direction X and extend along the vertical direction Y. The leads 1021 to 1023 and 1031 to 1034 are made of Cu.

[0117] [First lead group] The first lead group 1020 is composed of a first drive lead 1021 , a second drive lead 1022 , and an output lead 1023 .

[0118] 28, the first drive lead 1021 is disposed in the center of the first die pad 11 in the horizontal direction X. The first drive lead 1021 has a connection portion 1211, a base portion 1212, and a substrate connection portion 1213. The connection portion 1211 is connected to the first side surface 113 of the first die pad 11. In this embodiment, the first drive lead 1021 is integral with the first die pad 11. The first drive lead 1021 and the first die pad 11 constitute an integral first lead frame 14.

[0119] The base 1212 extends from the connection portion 1211 in the vertical direction Y and protrudes from the first resin side surface 903 of the sealing resin 900. The substrate connection portion 1213 extends from the tip of the base 1212 in the vertical direction Y. The substrate connection portion 1213 is inserted into a component hole in a mounting board and connected to the conductor wiring of the mounting board by soldering (both not shown). As shown in FIG. 28 , the base 1212 is formed to be wider in the horizontal direction X than the substrate connection portion 1213. In the horizontal direction X, the base 1212 is formed to protrude more than the substrate connection portion 1213 in the direction from the fourth resin side surface 906 toward the third resin side surface 905 of the sealing resin 900.

[0120] 28, the second drive lead 1022 is disposed in the center of the sealing resin 900 in the horizontal direction X. The second drive lead 1022 has a pad portion 1221, a base portion 1222, and a substrate connection portion 1223. The pad portion 1221 is disposed away from the second die pad 12 toward the first resin side surface 903 of the sealing resin 900 in the vertical direction Y. The pad portion 1221 extends along the first side surface 113 of the first die pad 11 and the first side surface 123 of the second die pad 12. In other words, the pad portion 1221 is disposed so as to straddle from the first side surface 113 of the first die pad 11 to the first side surface 123 of the second die pad 12. The pad portion 1221 is a connection portion to which the second connection member 1062 is connected.

[0121] The base 1222 extends from the pad portion 1221 in the vertical direction Y and protrudes from the first resin side surface 903 of the sealing resin 900. The substrate connection portion 1223 extends from the tip of the base 1222 in the vertical direction Y. As shown in FIG. 28 , the base 1222 is formed to be wider in the horizontal direction X than the substrate connection portion 1223. In the horizontal direction X, the base 1222 is formed to protrude more than the substrate connection portion 1223 in the direction from the third resin side surface 905 toward the fourth resin side surface 906 of the sealing resin 900.

[0122] As shown in FIG. 28 , the output lead 1023 is disposed at the center of the second die pad 12 in the horizontal direction X. The output lead 1023 has a connection portion 1231, a base portion 1232, and a substrate connection portion 1233. The connection portion 1231 is connected to the first side surface 123 of the second die pad 12. In this embodiment, the output lead 1023 is integral with the second die pad 12. The output lead 1023 and the second die pad 12 constitute an integral second lead frame 15. The base portion 1232 extends from the connection portion 1231 in the vertical direction Y and protrudes from the first resin side surface 903 of the sealing resin 900. The substrate connection portion 1233 extends from the tip of the base portion 1232 in the vertical direction Y. As shown in FIG. 28 , the base portion 1232 is formed to be wider in the horizontal direction X than the substrate connection portion 1233. In the lateral direction X, the base portion 1232 is formed so as to protrude further than the substrate connecting portion 1233 in the direction from the third resin side surface 905 toward the fourth resin side surface 906 of the sealing resin 900 .

[0123] [Second lead group] The second lead group 1030 is composed of a first control lead 1031 , a first source lead 1032 , a second source lead 1033 , and a second control lead 1034 .

[0124] As shown in FIG. 28 , the first control lead 1031 has a pad portion 1311, a base portion 1312, and a substrate connection portion 1313. The pad portion 1311 is disposed away from the first die pad 11 in the vertical direction Y toward the second resin side surface 904 of the sealing resin 900. The pad portion 1311 is a wire bonding portion to which wires 71 and 72 are connected. The base portion 1312 extends from the pad portion 1311 in the vertical direction Y and protrudes from the second resin side surface 904 of the sealing resin 900. The substrate connection portion 1313 extends from the tip of the base portion 1312 in the vertical direction Y. As shown in FIG. 28 , the base portion 1312 is formed to have a wider width in the horizontal direction X than the substrate connection portion 1313. In the horizontal direction X, the base portion 1312 is formed to protrude more than the substrate connection portion 1313 in the direction from the fourth resin side surface 906 toward the third resin side surface 905.

[0125] 28, the first source lead 1032 has a pad portion 1321, a base portion 1322, and a substrate connection portion 1323. The pad portion 1321 is arranged away from the first die pad 11 toward the second resin side surface 904 of the sealing resin 900 in the vertical direction Y. The pad portion 1321 is a wire bonding portion to which the wire 73 is connected. The base portion 1322 extends from the pad portion 1321 in the vertical direction Y and protrudes from the second resin side surface 904 of the sealing resin 900. The substrate connection portion 1323 extends in the vertical direction Y from the tip of the base portion 1322.

[0126] 28, the second source lead 1033 has a pad portion 1331, a base portion 1332, and a substrate connection portion 1333. The pad portion 1331 is arranged away from the second die pad 12 toward the second resin side surface 904 of the sealing resin 900 in the vertical direction Y. The pad portion 1331 is a wire bonding portion to which the wire 76 is connected. The base portion 1332 extends from the pad portion 1331 in the vertical direction Y and protrudes from the second resin side surface 904 of the sealing resin 900. The substrate connection portion 1333 extends in the vertical direction Y from the tip of the base portion 1332.

[0127] As shown in FIG. 28 , the second control lead 1034 has a pad portion 1341, a base portion 1342, and a substrate connection portion 1343. The pad portion 1341 is disposed away from the second die pad 12 in the vertical direction Y toward the second resin side surface 904 of the sealing resin 900. The pad portion 1341 is a wire bonding portion to which wires 74 and 75 are connected. The base portion 1342 extends from the pad portion 1341 in the vertical direction Y and protrudes from the second resin side surface 904 of the sealing resin 900. The substrate connection portion 1343 extends in the vertical direction Y from the end of the base portion 1342. The base portion 1342 is formed to be wider in the horizontal direction X than the substrate connection portion 1343. In the horizontal direction X, the base portion 1342 is formed to protrude more than the substrate connection portion 1343 in the direction from the third resin side surface 905 toward the fourth resin side surface 906.

[0128] 27 and 29, in this embodiment, the thickness of each of the leads 1021 to 1023 and 1031 to 1033 is equal to or less than the thickness of the first die pad 11 and the second die pad 12. The thickness of each of the leads 1021 to 1023 and 1031 to 1034 is, for example, 0.6 mm.

[0129] 29, each of the leads 1021 to 1023 of the first lead group 1020 and each of the leads 1031 to 1034 of the second lead group 1030 are bent, as indicated by the dashed dotted lines, toward the resin main surface 901 of the sealing resin 900. The semiconductor device A70 having the leads 1021 to 1023 and 1031 to 1034 formed in this manner is a semiconductor package to be surface-mounted on a mounting board.

[0130] As shown in FIG. 28, the sealing resin 900 has recesses 907 extending along the vertical direction Y from the first resin side surface 903 between the first drive lead 1021 and the second drive lead 1022, and between the second drive lead 1022 and the output lead 1023.

[0131] [First switching element, second switching element] The two first switching elements 40a, 40b are mounted on the main surface 111 of the first die pad 11. The two second switching elements 50a, 50b are mounted on the main surface 121 of the second die pad 12. The first switching elements 40a, 40b and the second switching elements 50a, 50b are silicon carbide (SiC) chips. In this embodiment, the first switching elements 40a, 40b and the second switching elements 50a, 50b are SiC-MOSFETs (metal-oxide-semiconductor field-effect transistors). The first switching elements 40a, 40b and the second switching elements 50a, 50b are elements capable of high-speed switching.

[0132] 28, the two first switching elements 40a, 40b are arranged in the center of the main surface 111 of the first die pad 11 in the horizontal direction X. The two first switching elements 40a, 40b are also arranged side by side in the vertical direction Y on the main surface 111 of the first die pad 11.

[0133] The first switching elements 40a and 40b are formed in a flat plate shape. In this embodiment, the first switching elements 40a and 40b have a rectangular shape that is long in the horizontal direction X when viewed in the thickness direction Z. As shown in FIGS. 28 and 29 , the first switching elements 40a and 40b have an element main surface 401, an element back surface 402, and multiple element side surfaces 403. The element main surface 401 and the element back surface 402 face in opposite directions in the thickness direction Z. The element main surface 401 faces the same direction as the resin main surface 901. That is, the element main surface faces the same direction as the main surface 111 of the first die pad 11. The element back surface 402 faces the main surface 111 of the first die pad 11. The multiple element side surfaces 403 face either the horizontal direction X or the vertical direction Y.

[0134] The first switching elements 40a and 40b have a first principal surface electrode 1041 and a first control electrode 1042 on the element principal surface 401, and a first back surface electrode 1043 on the element back surface 402. The first principal surface electrode 1041 is a source electrode. In this embodiment, the first principal surface electrode 1041 includes a main source electrode 1411 and control source electrodes 1412 and 1413. The first control electrode 1042 is a gate electrode. The control source electrodes 1412 and 1413 are, for example, driver source electrodes electrically connected to a circuit (driver) that drives the first switching elements 40a and 40b. In this embodiment, the first control electrode 1042 is disposed near the third side surface 115 of the first die pad 11 (the third resin side surface 905 of the sealing resin 900). The first control electrode 1042 is disposed in the center of the first principal surface electrode 1041 in the vertical direction Y. The main source electrode 1411 of the first principal surface electrode 1041 is arranged alongside the first control electrode 1042 in the horizontal direction X. The control source electrodes 1412 and 1413 are arranged to sandwich the first control electrode 1042 in the vertical direction Y. The first back surface electrode 1043 is a drain electrode. The first back surface electrode 1043 is electrically connected to the first die pad 11 by solder 81.

[0135] 28, the two second switching elements 50a, 50b are arranged in the center of the main surface 121 of the second die pad 12 in the horizontal direction X. The two second switching elements 50a, 50b are also arranged side by side in the vertical direction Y on the main surface 121 of the second die pad 12.

[0136] The second switching elements 50a and 50b are formed in a flat plate shape. In this embodiment, the second switching elements 50a and 50b have a rectangular shape that is long in the horizontal direction X when viewed in the thickness direction Z. As shown in FIG. 28 , the second switching elements 50a and 50b have an element main surface 501, an element back surface 502, and multiple element side surfaces 503. The element main surface 501 and the element back surface 502 face in opposite directions in the thickness direction Z. The element main surface 501 faces the resin main surface 901. That is, the element main surface faces the same direction as the main surface 121 of the second die pad 12. The element back surface 502 faces the main surface 121 of the second die pad 12. The multiple element side surfaces 503 face either the horizontal direction X or the vertical direction Y.

[0137] The second switching elements 50a and 50b have a second principal surface electrode 1051 and a second control electrode 1052 on the element principal surface 501, and a second back surface electrode 1053 on the element back surface 502. The second principal surface electrode 1051 is a source electrode. In this embodiment, the second principal surface electrode 1051 includes a main source electrode 511 and control source electrodes 512 and 513. The second control electrode 1052 is a gate electrode. The control source electrodes 512 and 513 are, for example, driver source electrodes electrically connected to a circuit (driver) that drives the second switching elements 50a and 50b. In this embodiment, the second control electrode 1052 is disposed near the fourth side surface 126 of the second die pad 12 (the fourth resin side surface 906 of the sealing resin 900). The second control electrode 1052 is disposed in the center of the second principal surface electrode 1051 in the vertical direction Y. The main source electrode 511 of the second principal surface electrode 1051 is arranged to be aligned with the second control electrode 1052 in the horizontal direction X. The control source electrodes 512 and 513 are arranged to sandwich the second control electrode 1052 in the vertical direction Y. The second back surface electrode 1053 is a drain electrode. The second back surface electrode 1053 is electrically connected to the second die pad 12 by solder 82.

[0138] [First connecting member, second connecting member] The first principal surface electrodes 1041 (main source electrodes 1411) of the first switching elements 40a and 40b are connected to the second die pad 12 by first connection members 1061. The first connection members 1061 are conductive plate-like members called clips. The first connection members 1061 are formed by bending a plate-like conductive plate. In this embodiment, the first connection members 1061 have a strip shape extending in the horizontal direction X. The first connection members 1061 connect the first principal surface electrodes 1041 (main source electrodes 1411) of the first switching elements 40a and 40b to the second die pad 12. As shown in FIG. 31 , one end of the first connection member 1061 is connected to the main source electrodes 1411 of the first switching elements 40a and 40b by solder 83, and the other end of the first connection member 1061 is connected to the second die pad 12 by solder 84. The first connecting member 1061 is made of Cu. The thickness of the first connecting member 1061 is not less than 0.05 mm and not more than 1.0 mm, and is preferably not less than 0.5 mm.

[0139] Note that the first main surface electrodes 1041 (main source electrodes 1411) of the first switching elements 40a, 40b may be connected to the second die pad 12 by a plurality of wires instead of the first connecting member 1061. The number of wires is preferably set according to, for example, the drive current that can be passed through the semiconductor device A70.

[0140] The second switching elements 50a and 50b are connected to the second drive lead 1022 by a second connecting member 1062. The second connecting member 1062 is a conductive plate-like member called a clip. The second connecting member 1062 is formed by bending a plate-like conductive plate.

[0141] The second connecting member 1062 has a lead connecting portion 621, an electrode connecting portion 622, and a linking portion 623. The lead connecting portion 621 extends in the horizontal direction X, similar to the pad portion 1221 of the second drive lead 1022. As shown in FIG. 28 , the lead connecting portion 621 is connected to the pad portion 1221 by solder 86. The electrode connecting portion 622 is formed in a rectangular shape corresponding to the second main surface electrode 1051 (main source electrode 511) of the second switching elements 50a, 50b, and is connected to the second main surface electrode 1051 by solder 85. The linking portion 623 connects the lead connecting portion 621 and the electrode connecting portion 622. The linking portion 623 extends from the lead connecting portion 621 in the vertical direction Y. The linking portion 623 is connected to an end of the electrode connecting portion 622 that is closer to the first die pad 11. That is, each electrode connection portion 622 extends in the horizontal direction X from the coupling portion 623. As shown in FIG. 31 , in this embodiment, the second connection member 1062 is formed between the second switching elements 50a, 50b and the third side surface 125 of the second die pad 12 so that the coupling portion 623 is parallel to the main surface 121 of the second die pad 12. The second connection member 1062 is made of Cu. The thickness of the second connection member 1062 is equal to or greater than 0.05 mm and equal to or less than 1.0 mm, and is preferably equal to or greater than 0.5 mm.

[0142] Wire The semiconductor device A70 includes a plurality of wires 71 to 76. The wires 71 to 76 are conductive linear members. The wires 71 to 76 are made of, for example, Al. The diameter of the wires 71 to 76 is, for example, 0.04 mm or more and 0.1 mm or less.

[0143] The wire 71 is connected between the pad portion 1311 of the first control lead 1031 and the first control electrode 1042 of the first switching element 40a. The wire 72 is connected between the pad portion 1311 of the first control lead 1031 and the first control electrode 1042 of the first switching element 40b. The wire 73 is connected between the pad portion 1321 of the first source lead 1032 and the control source electrode 1413 of the first switching element 40b.

[0144] Wire 74 is connected between pad portion 1341 of second control lead 1034 and second control electrode 1052 of second switching element 50a. Wire 75 is connected between pad portion 1341 of second control lead 1034 and second control electrode 1052 of second switching element 50b. Wire 76 is connected between pad portion 1331 of second source lead 1033 and control source electrode 512 of second switching element 50b.

[0145] (action) Next, the operation of the semiconductor device A70 of the sixth embodiment will be described. The semiconductor device A70 of this embodiment includes first switching elements 40a, 40b and second switching elements 50a, 50b within a single sealing resin 900. The first main surface electrodes 1041 (main source electrodes 1411) of the first switching elements 40a, 40b are connected to the second die pad 12 on which the second switching elements 50a, 50b are mounted by first connecting members 1061. Therefore, the semiconductor device A70 of this embodiment forms an inverter circuit in which the first switching elements 40a, 40b and the second switching elements 50a, 50b are connected in series.

[0146] An inverter circuit can be configured by connecting two semiconductor devices. In this case, the inverter circuit is configured by connecting the leads (a source lead on the high potential side and a drain lead on the low potential side) of the two semiconductor devices with wiring on a mounting board on which the two semiconductor devices are mounted. In this case, the external wiring increases the inductance in the leads of the two semiconductor devices.

[0147] In contrast, in the semiconductor device A70 of this embodiment, the first switching elements 40a, 40b and the second switching elements 50a, 50b that constitute the inverter circuit are connected by a first connecting member 1061 inside the sealing resin 900. Therefore, compared to when they are connected by external wiring, the conductor distance between the first drive lead 1021, the output lead 1023, and the second drive lead 1022 is shorter, and the inductance of the semiconductor device A70 is smaller. In this way, in the semiconductor device A70 of this embodiment, the inductance can be reduced.

[0148] In the semiconductor device A70 of this embodiment, a first drive lead 1021, a second drive lead 1022, and an output lead 1023 are arranged in this order in the horizontal direction X. That is, the first drive lead 1021 and the second drive lead 1022 are arranged adjacent to each other. A high potential voltage is supplied to the first drive lead 1021, and a low potential voltage is supplied to the second drive lead 1022.

[0149] When the first switching elements 40a and 40b are turned on and the second switching elements 50a and 50b are turned off, a first current I1 flows from the first drive lead 1021 to the output lead 1023. Conversely, when the first switching elements 40a and 40b are turned off and the second switching elements 50a and 50b are turned on, a second current I2 flows from the output lead 1023 to the second drive lead 1022. When the semiconductor device A70 is operated with a high-speed control signal (e.g., 1 MHz), the first current I1 and the second current I2 flow alternately in opposite directions relative to the semiconductor device A70 in the adjacent first drive lead 1021 and second drive lead 1022. The magnetic flux generated by these first current I1 and second current I2 reduces mutual inductance, thereby further reducing parasitic inductance in the semiconductor device A70.

[0150] (effect) As described above, according to this embodiment, the following effects are achieved. (1-1) The semiconductor device A70 includes first switching elements 40a, 40b and second switching elements 50a, 50b within a single sealing resin 900. The first main surface electrodes 1041 (main source electrodes 1411) of the first switching elements 40a, 40b are connected to the second die pad 12 on which the second switching elements 50a, 50b are mounted by first connecting members 1061. Therefore, in the semiconductor device A70, the conductor distances between the first drive lead 1021, the output lead 1023, and the second drive lead 1022 are shortened, and inductance can be reduced.

[0151] (1-2) In the semiconductor device A70, the first drive lead 1021, the second drive lead 1022, and the output lead 1023 are arranged in this order in the horizontal direction X. Depending on the operating state, the inductance in the semiconductor device A70 can be further reduced by a first current I1 flowing from the first drive lead 1021 to the output lead 1023 and a second current I2 flowing from the output lead 1023 to the second drive lead 1022.

[0152] (1-3) The thickness of the first die pad 11 and the second die pad 12 is 1 mm or more and 3 mm or less. It is preferable that the first die pad 11 and the second die pad 12 are thick. Heat generated by the operation of the first switching elements 40a and 40b is transferred from the first switching elements 40a and 40b to the first die pad 11. The thicker the first die pad 11, the easier it is for heat to be transferred from the first switching elements 40a and 40b to the first die pad 11. In other words, the heat dissipation from the first switching elements 40a and 40b can be improved, and the thermal resistance of the first switching elements 40a and 40b can be reduced. Similarly, the thermal resistance of the second switching elements 50a and 50b can be reduced.

[0153] (1-4) The first switching elements 40a, 40b and the second die pad 12 are connected by the first connecting member 1061 made of a plate-like member. Therefore, it is possible to handle a larger current than when the first switching elements 40a, 40b and the second die pad 12 are connected by multiple wires. Furthermore, compared to when the first switching elements 40a, 40b and the second die pad 12 are connected by multiple wires, fewer connecting members are required, which reduces the number of manufacturing steps. Furthermore, since the number of wires in the semiconductor device A70 can be reduced, the occurrence of wire breakage and the like can be suppressed.

[0154] (1-5) The second switching elements 50a, 50b and the second drive lead 1022 are connected by the second connecting member 1062 made of a plate-like member. Therefore, it is possible to handle a larger current than when the second switching elements 50a, 50b and the second drive lead 1022 are connected by multiple wires. Furthermore, compared to when the second switching elements 50a, 50b and the second drive lead 1022 are connected by multiple wires, fewer connecting members are required, which reduces the number of manufacturing steps. Furthermore, since the number of wires in the semiconductor device A70 can be reduced, the occurrence of wire breakage and the like can be suppressed.

[0155] (1-6) The semiconductor device A70 includes leads 1021 to 1023 protruding from a first resin side surface 903 of the sealing resin 900, and leads 1031 to 1034 protruding from a second resin side surface 904 of the sealing resin 900. Therefore, it is possible to widen the space between the first drive lead 1021 and the second drive lead 1022, and the space between the second drive lead 1022 and the output lead 1023. This makes it easy to ensure insulation.

[0156] (1-7) The sealing resin 900 has recesses 907 extending from the first resin side surface 903 along the vertical direction Y between the first drive lead 1021 and the second drive lead 1022 and between the second drive lead 1022 and the output lead 1023. The recesses 907 increase the distance (creepage distance) along the surface of the sealing resin 900 between the first drive lead 1021 and the second drive lead 1022 and between the second drive lead 1022 and the output lead 1023. This makes it possible to further ensure insulation.

[0157] (Modification of the sixth embodiment) The sixth embodiment can be modified as follows: In the drawings showing the modified examples, wires are omitted.

[0158] 32, the first connection member 61a connecting the first switching elements 40a, 40b and the second die pad 12 is a single plate-shaped member. The first connection member 61a includes a die connection portion 611 extending in the vertical direction Y and two electrode connection portions 612 extending from the die connection portion 611 in the horizontal direction X. The die connection portion 611 is connected to the second die pad 12, and the electrode connection portions 612 are connected to the first main surface electrodes 1041 (main source electrodes 1411) of the first switching elements 40a, 40b. Use of this first connection member 61a can facilitate the manufacture of the semiconductor device A71.

[0159] The number of semiconductor elements mounted on the first die pad 11 and the second die pad 12 may be changed as appropriate. For example, a semiconductor device A72 shown in Fig. 33 includes three first switching elements 40a, 40b, and 40c mounted on the first die pad 11 and three second switching elements 50a, 50b, and 50c mounted on the second die pad 12. Note that the semiconductor device may also include one first switching element mounted on the first die pad 11 and one second switching element mounted on the second die pad 12.

[0160] The arrangement of the leads 1021 to 1023 constituting the first lead group 1020 may be changed. For example, the output lead 1023 may be arranged between the first drive lead 1021 and the second drive lead 1022.

[0161] The arrangement of the leads 1031 to 1034 constituting the second lead group 1030 may also be changed as appropriate. For example, the first source lead 1032 may be arranged outside the first control lead 1031 (at a position closer to the third resin side surface 905 of the sealing resin 900). The second source lead 1033 may be arranged outside the second control lead 1034 (at a position closer to the fourth resin side surface 906 of the sealing resin 900).

[0162] Seventh embodiment A semiconductor device A80 of the seventh embodiment will be described with reference to FIGS. The semiconductor device A80 of the seventh embodiment differs from the semiconductor device A70 of the sixth embodiment in the arrangement of the first switching element, the second switching element, and the leads.

[0163] As shown in FIGS. 34 to 37, the semiconductor device A80 has a first lead group 1020a and a second lead group 1030a. [First lead group] 35 , the first drive lead 1021 is disposed closer to the fourth side surface 116 of the first die pad 11 in the lateral direction X. The second drive lead 1022 is disposed closer to the third side surface 125 of the second die pad 12 in the lateral direction X. In this embodiment, the first drive lead 1021 and the second drive lead 1022 are disposed so that their midpoints are at the center of the sealing resin 900.

[0164] [Second lead group] The second lead group 1030a is composed of a first control lead 1031, a first source lead 1032, a second source lead 1033, a second control lead 1034, and an output lead 1035. The output lead 1035 is disposed between the first source lead 1032 and the second source lead 1033.

[0165] 35, the output lead 1035 has a connection portion 1351, a base portion 1352, and a substrate connection portion 1353. The connection portion 1351 is connected to the second side surface 124 of the second die pad 12. In this embodiment, the output lead 1035 is integrated with the second die pad 12. The output lead 1035 and the second die pad 12 form an integrated second lead frame 15a.

[0166] The connection portion 1351 includes a die connection portion 1351a and a pad portion 1351b. The die connection portion 1351a is connected to a portion of the second side surface 124 of the second die pad 12 closer to the third side surface 125. The pad portion 1351b extends from the die connection portion 1351a toward the first source lead 1032 along the horizontal direction X. The pad portion 1351b is disposed at a position overlapping with the first drive lead 1021 when viewed from the vertical direction Y.

[0167] The base 1352 extends from the connection portion 1351 in the vertical direction Y and protrudes from the second resin side surface 904 of the sealing resin 900. The substrate connection portion 1353 extends from the tip of the base 1352 in the vertical direction Y. As shown in FIG. 35 , the base 1352 is formed to be wider in the horizontal direction X than the substrate connection portion 1353. The base 1352 is formed wide so that a part of the base 1352 overlaps with the first drive lead 1021 and another part overlaps with the second drive lead 1022 in the vertical direction Y. The substrate connection portion 1353 is disposed at the center of the base 1352 in the horizontal direction X. In addition, the substrate connection portion 1353 is disposed at the center of the sealing resin 900 in the horizontal direction X.

[0168] [First switching element, second switching element] As shown in FIGS. 35 and 37, the first switching elements 40a and 40b and the second switching elements 50a and 50b are arranged near the center of the sealing resin 900 in the lateral direction X.

[0169] 35 and 37, the first switching elements 40a, 40b are disposed in a portion closer to the fourth side surface 116 of the first die pad 11 in the horizontal direction X. The fourth side surface 116 faces the third side surface 125 of the second die pad 12. That is, the first switching elements 40a, 40b are disposed closer to the second die pad 12 of the first die pad 11. The first switching elements 40a, 40b are disposed such that the main source electrodes 1411 of the first principal surface electrodes 1041 overlap the pad portions 1351b of the output leads 1035 in the vertical direction Y. In this embodiment, a distance (first distance) Lx1 from the fourth side surface 116 of the first die pad 11 to the element side surfaces 403 of the first switching elements 40a, 40b is equal to or greater than the thickness of the first die pad 11.

[0170] 35 and 37, the second switching elements 50a, 50b are arranged in a portion closer to the third side surface 125 of the second die pad 12 in the horizontal direction X. That is, the second switching elements 50a, 50b are arranged in a portion closer to the first die pad 11 of the second die pad 12. The second switching elements 50a, 50b are arranged in the vertical direction Y such that the main source electrode 511 of the second principal surface electrode 1051 overlaps with the pad portion 1221 of the second drive lead 1022. In this embodiment, the distance (second distance) Lx2 from the third side surface 125 of the second die pad 12 to the element side surface 503 of the second switching elements 50a, 50b is equal to or greater than the thickness of the second die pad 12.

[0171] [First connecting member, second connecting member] In this embodiment, the first connecting member 61b has a strip shape extending in the vertical direction Y and connects the main source electrodes 1411 of the first switching elements 40a and 40b to the pad portion 1351b of the output lead 1035. The output lead 1035 is connected to the second die pad 12. Therefore, it can be said that the first main surface electrodes 1041 (main source electrodes 1411) of the first switching elements 40a and 40b are connected to the second die pad 12 via the output lead 1035. The second connecting member 62b has a strip shape extending in the vertical direction Y and connects the main source electrodes 511 of the second switching elements 50a and 50b to the pad portion 1221 of the second drive lead 1022.

[0172] (action) Next, the operation of the semiconductor device A80 of the seventh embodiment will be described. The first switching elements 40a and 40b are arranged in a portion closer to the fourth side surface 116 of the first die pad 11 in the horizontal direction X. The first switching elements 40a and 40b are arranged so that the main source electrodes 1411 overlap the pad portion 1351b of the output lead 1035 in the vertical direction Y. The pad portion 1351b is arranged so that it overlaps the first drive lead 1021 in the vertical direction Y. Therefore, the first drive lead 1021, the first switching elements 40a and 40b, and the pad portion 1351b of the output lead 1035 overlap in the vertical direction Y. This allows a current to flow approximately linearly between the first drive lead 1021 and the output lead 1035 in the semiconductor device A80.

[0173] The second switching elements 50a, 50b are arranged in a portion closer to the third side surface 125 of the second die pad 12 in the horizontal direction X. The second switching elements 50a, 50b are arranged so as to overlap with the second drive lead 1022 in the vertical direction Y. A portion of the output lead 1035 overlaps with the second drive lead 1022 in the vertical direction Y. This allows a current to flow approximately linearly between the second drive lead 1022 and the output lead 1035 in the semiconductor device A80.

[0174] 35, the first drive lead 1021 and the second drive lead 1022 are arranged adjacent to each other in the horizontal direction X. During inverter operation of the semiconductor device A80, in the first drive lead 1021, a current flows from the first drive lead 1021 to the output lead 1035. On the other hand, in the second drive lead 1022, a current flows from the output lead 1035 to the second drive lead 1022. Therefore, in the adjacent first drive lead 1021 and second drive lead 1022, magnetic fluxes generated by currents flowing in opposite directions reduce mutual inductance, thereby further reducing parasitic inductance in the semiconductor device A80.

[0175] Heat generated by the operation of the first switching elements 40a, 40b is transferred from the first switching elements 40a, 40b to the first die pad 11. In the first die pad 11, the heat is transferred while diffusing from the main surface 111 to the back surface 112 of the first die pad 11, as shown by the arrows in FIG. 37 . The heat is then transferred from each surface of the first die pad 11 to the sealing resin 900. Similarly, heat generated by the operation of the second switching elements 50a, 50b is transferred from the second switching elements 50a, 50b to the second die pad 12, and is then transferred while diffusing from the main surface 121 to the back surface 122 of the second die pad 12. The heat is then transferred from each surface of the second die pad 12 to the sealing resin 900.

[0176] The closer the first switching elements 40a, 40b are to the fourth side surface 116 of the first die pad 11, the more heat is transferred from the fourth side surface 116 to the sealing resin 900. Similarly, the closer the second switching elements 50a, 50b are to the third side surface 125 of the second die pad 12, the more heat is transferred from the third side surface 125 to the sealing resin 900. Therefore, due to a temperature rise in the resin portion 900a of the sealing resin 900 between the fourth side surface 116 and the third side surface 125, the efficiency of heat transfer from the fourth side surface 116 to the resin portion 900a decreases, and the efficiency of heat transfer from the third side surface 125 to the resin portion 900a decreases. In other words, the heat dissipation efficiency for the first switching elements 40a, 40b and the second switching elements 50a, 50b decreases.

[0177] However, as described above, in the semiconductor device A80 of this embodiment, the distance Lx1 from the fourth side surface 116 of the first die pad 11 to the element side surface 403 of the first switching elements 40a, 40b is equal to or greater than the thickness of the first die pad 11. The distance Lx2 from the third side surface 125 of the second die pad 12 to the element side surface 503 of the second switching elements 50a, 50b is equal to or greater than the thickness of the second die pad 12. This makes it possible to suppress a decrease in the heat dissipation efficiency of the first switching elements 40a, 40b and the second switching elements 50a, 50b.

[0178] Note that the decrease in heat dissipation efficiency can also be suppressed by increasing the distance L12 between the first die pad 11 and the second die pad 12, that is, by separating the first die pad 11 and the second die pad 12 from each other. However, by separating the first die pad 11 and the second die pad 12, the sealing resin 900 becomes larger, that is, the external dimensions of the semiconductor device become larger. On the other hand, by setting the positions of the first switching elements 40a, 40b and the second switching elements 50a, 50b as described above, the decrease in heat dissipation efficiency can be suppressed and an increase in the size of the semiconductor device A80 can be suppressed.

[0179] (effect) As described above, according to this embodiment, the following effects are achieved. (2-1) The semiconductor device A80 has a first drive lead 1021 and a second drive lead 1022 that protrude from a first resin side surface 903 of the sealing resin 900, and an output lead 1035 that protrudes from a second resin side surface 904 of the sealing resin 900. Therefore, insulation between the first drive lead 1021 and the output lead 1035 and between the second drive lead 1022 and the output lead 1035 can be easily ensured.

[0180] (2-2) In the semiconductor device A80, only the first drive lead 1021 and the second drive lead 1022 protrude from the first resin side surface 903 of the sealing resin 900. Therefore, the distance between the first drive lead 1021 and the second drive lead 1022 can be easily widened, and the creepage distance between the first drive lead 1021 and the second drive lead 1022 can be easily ensured.

[0181] (2-3) The distance Lx1 from the fourth side surface 116 of the first die pad 11 to the element side surface 403 of the first switching elements 40a, 40b is equal to or greater than the thickness of the first die pad 11. This makes it possible to suppress a decrease in the heat dissipation efficiency of the first die pad 11 for the first switching elements 40a, 40b.

[0182] (2-4) The distance Lx2 from the third side surface 125 of the second die pad 12 to the element side surface 503 of the second switching elements 50a and 50b is equal to or greater than the thickness of the second die pad 12. This makes it possible to suppress a decrease in the heat dissipation efficiency of the second die pad 12 for the second switching elements 50a and 50b.

[0183] (Modification of the seventh embodiment) The seventh embodiment can be modified as follows: In the drawings showing the modified examples, wires are omitted.

[0184] The shapes of the first connecting member 1061 and the second connecting member 1062 may be changed as appropriate. 38, the width of the first connection member 61c may be increased. Also, the width of the second connection member 62c may be increased. With the first connection member 61c and second connection member 62c formed in this manner, the current path from the first drive lead 1021 to the output lead 1035 and the current path from the output lead 1035 to the second drive lead 1022 become closer, and the mutual inductance can further reduce inductance.

[0185] Furthermore, as in the semiconductor device A82 shown in FIG. 39, by using first connecting members 61d and second connecting members 62d that have plate-like portions extending in the thickness direction Z, the inductance can be further reduced.

[0186] The shapes of the first drive lead 1021, the second drive lead 1022, and the output lead 1035 may be changed as appropriate. For example, as in a semiconductor device A83 shown in FIG. 40, the length in the vertical direction Y of the base portions 1212, 1222, 352 of the leads 1021, 1022, 1035 may be shortened.

[0187] Furthermore, as in the semiconductor device A84 shown in FIG. 41, the base portions 1212, 1222, and 352 may not protrude from the sealing resin 900. 42 , the first switching elements 40a, 40b and the second switching elements 50a, 50b may be arranged along the lateral direction X. In this case, the first switching elements 40a, 40b are arranged closer to the second side surface 114 of the first die pad 11, and the second switching elements 50a, 50b are arranged closer to the first side surface 123 of the second die pad 12. This allows heat to be dissipated from the fourth side surface 116 of the first die pad 11 and the third side surface 125 of the second die pad 12 even if the distance between the first switching element 40a and the fourth side surface 116 of the first die pad 11 and the distance between the second switching element 50a and the third side surface 125 of the second die pad 12 are shortened, thereby preventing a decrease in heat dissipation efficiency.

[0188] The number of first switching elements mounted on the first die pad 11 may be one or three or more. The number of second switching elements mounted on the second die pad 12 may be one or three or more.

[0189] (Other change examples) The above-described embodiments and modifications can be implemented with the following modifications: The above-described embodiments and modifications can be implemented in combination with the following modifications within the scope of technical inconsistency.

[0190] The first switching element and the second switching element may be made of Si elements or the like. Although a first switching element comprising a main source electrode 1411 and control source electrodes 1412 and 1413 is used as the first principal surface electrode 1041, a switching element having one, two, or four or more source electrodes may also be used. Also, although a second switching element comprising a main source electrode 511 and control source electrodes 512 and 513 is used as the second principal surface electrode 1051, a switching element having one, two, or four or more source electrodes may also be used.

[0191] (Addendum) The technical ideas that can be understood from the above-described embodiments and modifications will be described below. (Supplementary Note 1) A first die pad having a first main surface; a second die pad disposed apart from the first die pad in a first direction parallel to the first main surface and having a second main surface facing in the same direction as the first main surface; a first switching element mounted on the first main surface, the first switching element having a first element main surface facing the same direction as the first main surface, a first element back surface facing the opposite side to the first element main surface, a first main surface electrode and a first control electrode provided on the first element main surface, and a first back surface electrode provided on the first element back surface, the first back surface electrode being connected to the first main surface; a second switching element mounted on the second main surface, the second switching element having a second element main surface facing the same direction as the second main surface, a second element back surface facing the opposite side to the second element main surface, a second main surface electrode and a second control electrode provided on the second element main surface, and a second back surface electrode provided on the second element back surface, the second back surface electrode being connected to the second main surface; a first connection member that connects the first main surface electrode of the first switching element and the second die pad; a sealing resin having a plurality of resin side surfaces intersecting planes parallel to the first main surface and the second main surface, the sealing resin sealing the first switching element, the second switching element, the first die pad, the second die pad, and the first connection member; a plurality of leads including a first drive lead and a second drive lead arranged in the first direction, protruding from one of the plurality of resin side surfaces of the sealing resin that faces a second direction intersecting with the first direction, and extending in the second direction; a second connection member that connects the second main surface electrode of the second switching element and the second drive lead; Equipped with The second connection member includes a lead connection portion connected to the second drive lead, an electrode connection portion connected to the second main surface electrode of the second switching element, and a linking portion connecting the lead connection portion and the electrode connection portion.

[0192] (Supplementary Note 2) The semiconductor device according to Supplementary Note 1, wherein the coupling portion extends from the lead connection portion in the second direction. (Supplementary Note 3) The semiconductor device according to Supplementary Note 2, wherein the electrode connection portion extends from the coupling portion in the first direction.

[0193] (Supplementary Note 4) The semiconductor device according to any one of Supplementary Note 1 to Supplementary Note 3, wherein the second connection member is formed so that the coupling portion is parallel to the second main surface of the second die pad. (Appendix 5) A semiconductor device described in any one of Appendices 1 to 4, wherein a plurality of the first switching elements are mounted on the first die pad, and a plurality of the second switching elements are mounted on the second die pad.

[0194] (Supplementary Note 6) The semiconductor device according to Supplementary Note 5, wherein the plurality of first switching elements and the plurality of second switching elements are arranged in the second direction. (Supplementary Note 7) The semiconductor device according to Supplementary Note 6, wherein the first connection members extend in the first direction from the main surface electrodes of the plurality of first switching elements and are connected to the second die pad.

[0195] (Supplementary Note 8) the plurality of leads includes a first control lead and a second control lead; The semiconductor device further comprises: 8. The semiconductor device according to claim 1, further comprising: a first wire connecting the first control lead and the first control electrode; and a second wire connecting the second control lead and the second control electrode.

[0196] (Supplementary Note 9) the plurality of leads includes a first source lead and a second source lead; 9. The semiconductor device according to claim 1, wherein the first source lead is connected to the first main surface electrode of one of the first switching elements mounted on the first die pad, and the second source lead is connected to the second main surface electrode of one of the second switching elements mounted on the second die pad.

[0197] (Appendix 10) The semiconductor device according to Appendix 9, further comprising a third wire connecting the first source lead and the first main surface electrode, and a fourth wire connecting the second source lead and the second main surface electrode.

[0198] (Appendix 11) A semiconductor device described in any one of Appendices 1 to 10, wherein the first main surface electrode has a main source electrode and a control source electrode, and the first connection member connects the main source electrode of the first main surface electrode to the second die pad.

[0199] (Appendix 12) A semiconductor device described in any one of Appendices 1 to 11, wherein the second principal surface electrode has a main source electrode and a control source electrode, and the second connection member connects the main source electrode of the second principal surface electrode to the second drive lead.

[0200] (Supplementary Note 13) A first die pad having a first main surface; a second die pad disposed apart from the first die pad in a first direction parallel to the first main surface and having a second main surface facing in the same direction as the first main surface; a first switching element mounted on the first main surface, the first switching element having a first element main surface facing the same direction as the first main surface, a first element back surface facing the opposite side to the first element main surface, a first main surface electrode and a first control electrode provided on the first element main surface, and a first back surface electrode provided on the first element back surface, the first back surface electrode being connected to the first main surface; a second switching element mounted on the second main surface, the second switching element having a second element main surface facing the same direction as the second main surface, a second element back surface facing the opposite side to the second element main surface, a second main surface electrode and a second control electrode provided on the second element main surface, and a second back surface electrode provided on the second element back surface, the second back surface electrode being connected to the second main surface; a first connection member that connects the first main surface electrode of the first switching element and the second main surface of the second die pad; a sealing resin having a plurality of resin side surfaces intersecting planes parallel to the first main surface and the second main surface, the sealing resin sealing the first switching element, the second switching element, the first die pad, the second die pad, and the first connection member; a first lead group including a first drive lead and a second drive lead protruding from a first resin side surface facing a second direction intersecting the first direction among the plurality of resin side surfaces; a second lead group including a first control lead and a second control lead protruding from a second resin side surface facing in a direction opposite to the first resin side surface; a second connection member that connects the second main surface electrode of the second switching element and the second drive lead; Equipped with The semiconductor device described in claim 1, wherein the second connection member comprises: a lead connection portion connected to the second drive lead; a plurality of electrode connection portions connected to the second main surface electrodes of a plurality of the second switching elements; and a linking portion connecting the lead connection portion to the plurality of electrode connection portions.

[0201] (Supplementary Note 14) The semiconductor device according to Supplementary Note 13, wherein the coupling portion extends from the lead connection portion in the second direction. (Supplementary Note 15) The semiconductor device according to Supplementary Note 14, wherein the plurality of electrode connection portions extend in the first direction from the coupling portion.

[0202] (Appendix 16) The semiconductor device according to any one of Appendices 13 to 15, wherein the second connection member is formed so that the coupling portion is parallel to the second main surface of the second die pad.

[0203] (Supplementary Note 17) The first lead group includes an output lead connected to the second die pad, 17. The semiconductor device according to claim 13, wherein the output lead is disposed between the first drive lead and the second drive lead when viewed from the second direction.

[0204] (Appendix 18) A semiconductor device described in any one of Appendices 13 to 17, wherein the first main surface electrode has a main source electrode and a control source electrode, and the first connection member connects the main source electrode of the first main surface electrode to the second die pad.

[0205] (Appendix 19) A semiconductor device described in any one of Appendices 13 to 18, wherein the second principal surface electrode has a main source electrode and a control source electrode, and the second connection member connects the main source electrode of the second principal surface electrode to the second drive lead.

[0206] (Appendix 20) A semiconductor device according to any one of Appendices 13 to 19, comprising a first wire connecting the first control lead and the first control electrode, and a second wire connecting the second control lead and the second control electrode.

[0207] (Supplementary Note 21) The second lead group includes a first source lead and a second source lead; 21. The semiconductor device according to claim 13, wherein the first source lead is connected to the first main surface electrode of one of the first switching elements mounted on the first die pad, and the second source lead is connected to the second main surface electrode of one of the second switching elements mounted on the second die pad.

[0208] (Appendix 22) The semiconductor device according to Appendix 21, further comprising a third wire connecting the first source lead and the first main surface electrode, and a fourth wire connecting the second source lead and the second main surface electrode.

[0209] (Appendix A1) a first die pad having a first main surface; a second die pad disposed apart from the first die pad in a first direction parallel to the first main surface and having a second main surface facing in the same direction as the first main surface; a first switching element mounted on the first main surface, the first switching element having a first element main surface facing the same direction as the first main surface, a first element back surface facing the opposite side to the first element main surface, a first main surface electrode and a first control electrode provided on the first element main surface, and a first back surface electrode provided on the first element back surface, the first back surface electrode being connected to the first main surface; a second switching element mounted on the second main surface, the second switching element having a second element main surface facing the same direction as the second main surface, a second element back surface facing the opposite side to the second element main surface, a second main surface electrode and a second control electrode provided on the second element main surface, and a second back surface electrode provided on the second element back surface, the second back surface electrode being connected to the second main surface; a first connection member that connects the first main surface electrode of the first switching element and the second die pad; a sealing resin having a plurality of resin side surfaces intersecting planes parallel to the first main surface and the second main surface, the sealing resin sealing the first switching element, the second switching element, the first die pad, the second die pad, and the first connection member; a plurality of leads arranged in the first direction, protruding from one of the plurality of resin side surfaces of the sealing resin that faces a second direction intersecting with the first direction, and extending in the second direction; A semiconductor device comprising:

[0210] (Appendix A2) The semiconductor device according to Appendix A1, wherein the first connection member is a conductive plate-like member or a plurality of conductive wires.

[0211] (Appendix A3) The semiconductor device according to Appendix A1 or A2, wherein the first switching element is arranged closer to the second die pad than the center of the first die pad when viewed from the second direction.

[0212] (Appendix A4) The semiconductor device described in Appendix A3, wherein, when viewed from a direction perpendicular to the first main surface, a first distance from an edge of the first die pad closer to the second die pad to an edge of the first switching element closer to the second die pad is equal to or greater than a thickness of the first die pad.

[0213] (Appendix A5) The semiconductor device according to any one of Appendix A1 to Appendix A4, wherein the second switching element is arranged closer to the first die pad than the center of the second die pad when viewed from the second direction.

[0214] (Appendix A6) The semiconductor device described in Appendix A5, wherein, when viewed from a direction perpendicular to the second main surface, a second distance from the side of the second die pad closer to the first die pad to the side of the second switching element closer to the first die pad is equal to or greater than the thickness of the second die pad.

[0215] (Appendix A7) The plurality of leads include: a first control lead that is arranged at an end of the sealing resin on the side where the first die pad is arranged and that is connected to the first control electrode of the first switching element; a second control lead that is disposed at an end of the sealing resin on the side where the second die pad is disposed, and that is connected to the second control electrode of the second switching element; a first drive lead connected to the first back surface electrode of the first switching element; a second drive lead connected to the second main surface electrode of the second switching element; an output lead connected to the second die pad; Including, the first drive lead, the second drive lead, and the output lead are disposed between the first control lead and the second control lead; A semiconductor device according to any one of Appendix A1 to Appendix A6.

[0216] (Appendix A8) The semiconductor device according to Appendix A7, wherein the output lead is disposed between the first drive lead and the second drive lead.

[0217] (Appendix A9) The semiconductor device according to Appendix A7, wherein the second drive lead is disposed between the first drive lead and the output lead.

[0218] (Appendix A10) The plurality of leads include: a first source lead that is disposed closer to the second die pad than the first control lead and that is connected to the first main surface electrode of the first switching element; a second source lead that is disposed closer to the first die pad than the second control lead and is connected to the second main surface electrode of the second switching element; The semiconductor device according to any one of Appendix A7 to Appendix A9, comprising:

[0219] (Appendix A11) The semiconductor device according to any one of Appendix A7 to Appendix A10, wherein the thicknesses of the first drive lead, the second drive lead, and the output lead are equal to the thicknesses of the first die pad and the second die pad.

[0220] (Appendix A12) a second connecting member that connects the second main surface electrode of the second switching element and the second drive lead; A semiconductor device according to any one of Appendix A7 to Appendix A11.

[0221] (Appendix A13) a first die pad having a first main surface; a second die pad disposed apart from the first die pad in a first direction parallel to the first main surface and having a second main surface facing in the same direction as the first main surface; a first switching element mounted on the first main surface, the first switching element having a first element main surface facing the same direction as the first main surface, a first element back surface facing the opposite side to the first element main surface, a first main surface electrode and a first control electrode provided on the first element main surface, and a first back surface electrode provided on the first element back surface, the first back surface electrode being connected to the first main surface; a second switching element mounted on the second main surface, the second switching element having a second element main surface facing the same direction as the second main surface, a second element back surface facing the opposite side to the second element main surface, a second main surface electrode and a second control electrode provided on the second element main surface, and a second back surface electrode provided on the second element back surface, the second back surface electrode being connected to the second main surface; a first connection member connected to the first main surface electrode of the first switching element; a sealing resin having a plurality of resin side surfaces intersecting planes parallel to the first main surface and the second main surface, the sealing resin sealing the first switching element, the second switching element, the first die pad, the second die pad, and the first connection member; a first lead group including a plurality of leads protruding from a first resin side surface, among the plurality of resin side surfaces, that faces a second direction intersecting with the first direction; a second lead group including a plurality of leads protruding from a second resin side surface facing in a direction opposite to the first resin side surface; Equipped with the first main surface electrode of the first switching element is electrically connected to the second die pad via the first connection member.

[0222] (Appendix A14) The plurality of leads constituting the first lead group are a first drive lead connected to the first back surface electrode of the first switching element; a second drive lead connected to the second main surface electrode of the second switching element; an output lead connected to the second die pad; Including, The plurality of leads constituting the second lead group are a first control lead connected to the first control electrode of the first switching element; a second control lead connected to the second control electrode of the second switching element; The semiconductor device according to Appendix A13, comprising:

[0223] (Appendix A15) The plurality of leads constituting the first lead group are a first drive lead connected to the first back surface electrode of the first switching element; a second drive lead connected to the second main surface electrode of the second switching element; Including, The plurality of leads constituting the second lead group are a first control lead connected to the first control electrode of the first switching element; a second control lead connected to the second control electrode of the second switching element; an output lead connected to the second die pad; Including, The semiconductor device according to Appendix A13, wherein the first main surface electrode of the first switching element is connected to the second die pad via the first connection member and the output lead.

[0224] (Appendix A16) The semiconductor device according to Appendix A14 or A15, wherein the first drive lead and the second drive lead are arranged adjacent to each other.

[0225] (Appendix A17) The second lead group includes: a first source lead that is arranged closer to the center of the sealing resin than the first control lead and is connected to the first main surface electrode of the first switching element; a second source lead that is arranged closer to the center of the sealing resin than the second control lead and is connected to the second main surface electrode of the second switching element; The semiconductor device according to any one of Appendix A14 to Appendix A16, comprising:

[0226] (Appendix A18) a second connecting member that connects the second main surface electrode of the second switching element and the second drive lead; A semiconductor device according to any one of Appendix A14 to Appendix A17.

[0227] (Appendix A19) a plurality of the first switching elements are mounted on the first die pad; a plurality of the second switching elements are mounted on the second die pad; The semiconductor device according to any one of Appendix A13 to Appendix A18.

[0228] (Appendix A20) The semiconductor device according to appendix A19, wherein the first switching elements and the second switching elements are arranged in the second direction.

[0229] (Appendix A21) The semiconductor device according to Appendix A19 or A20, wherein the first main surface electrodes of the plurality of first switching elements are connected to the second die pad by the first connecting members, respectively.

[0230] (Appendix A22) The semiconductor device according to any one of Appendix A13 to Appendix A21, wherein the first switching element is arranged closer to the second die pad than the center of the first die pad when viewed from the second direction.

[0231] (Appendix A23) The semiconductor device described in Appendix A22, wherein, when viewed from a direction perpendicular to the first main surface, a first distance from an edge of the first die pad closer to the second die pad to an edge of the first switching element closer to the second die pad is equal to or greater than a thickness of the first die pad.

[0232] (Appendix A24) The semiconductor device according to any one of Appendix A13 to Appendix A23, wherein the second switching element is arranged closer to the first die pad than the center of the second die pad when viewed from the second direction.

[0233] (Appendix A25) The semiconductor device described in Appendix A24, wherein, when viewed from a direction perpendicular to the second main surface, a second distance from the side of the second die pad closer to the first die pad to the side of the second switching element closer to the first die pad is equal to or greater than the thickness of the second die pad.

[0234] (Appendix A26) the first switching elements are arranged in the first direction and are disposed near a side surface of the second resin; The second switching elements are arranged in the first direction and are disposed near a side surface of the first resin. The semiconductor device according to Appendix A19.

[0235] (Appendix B1) a first die pad having a first main surface; a second die pad disposed apart from the first die pad in a first direction parallel to the first main surface and having a second main surface facing in the same direction as the first main surface; a first switching element mounted on the first main surface, the first switching element having a first element main surface facing the same direction as the first main surface, a first element back surface facing the opposite side to the first element main surface, a first main surface electrode and a first control electrode provided on the first element main surface, and a first back surface electrode provided on the first element back surface, the first back surface electrode being electrically connected to the first main surface; a second switching element mounted on the second main surface, the second switching element having a second element main surface facing the same direction as the second main surface, a second element back surface facing the opposite side to the second element main surface, a second main surface electrode and a second control electrode provided on the second element main surface, and a second back surface electrode provided on the second element back surface, the second back surface electrode being electrically connected to the second main surface; a first connection member that connects the first main surface electrode of the first switching element and the second die pad; a sealing resin having a plurality of resin side surfaces intersecting planes parallel to the first main surface and the second main surface, the sealing resin sealing the first switching element, the second switching element, the first die pad, the second die pad, and the first connection member; a plurality of leads arranged in the first direction, protruding from a first resin side surface of the sealing resin that faces a second direction intersecting the first direction, and extending in the second direction; Equipped with the first control electrode is disposed on the first switching element on a side opposite to the second switching element with respect to the first principal surface electrode, and is spaced apart in the first direction on a side opposite to the second switching element with respect to the first principal surface electrode when viewed from the second direction; the second control electrode is disposed on the second switching element on a side opposite to the first switching element with respect to the second principal surface electrode, and is spaced apart in the first direction on a side opposite to the first switching element with respect to the second principal surface electrode when viewed from the second direction, the first connection member extends from the first principal surface electrode to a part of the second principal surface located between the first switching element and the second switching element. Semiconductor device.

[0236] (Appendix B2) The semiconductor device according to Appendix B1, wherein the first connection member is a conductive plate-like member or a plurality of conductive wires.

[0237] (Appendix B3) The semiconductor device according to Appendix B1 or Appendix B2, wherein the first switching element is arranged closer to the second die pad than the center of the first die pad when viewed from the second direction.

[0238] (Appendix B4) The semiconductor device described in Appendix B3, wherein, when viewed from a direction perpendicular to the first main surface, a first distance from an edge of the first die pad closer to the second die pad to an edge of the first switching element closer to the second die pad is equal to or greater than a thickness of the first die pad.

[0239] (Appendix B5) The semiconductor device according to any one of Appendix B1 to Appendix B4, wherein the second switching element is arranged closer to the first die pad than the center of the second die pad when viewed from the second direction.

[0240] (Appendix B6) The semiconductor device described in Appendix B5, wherein, when viewed from a direction perpendicular to the second main surface, a second distance from the side of the second die pad closer to the first die pad to the side of the second switching element closer to the first die pad is equal to or greater than the thickness of the second die pad.

[0241] (Appendix B7) The plurality of leads include: a first control lead that is arranged at an end of the sealing resin on the side where the first die pad is arranged and that is connected to the first control electrode of the first switching element; a second control lead that is disposed at an end of the sealing resin on the side where the second die pad is disposed, and that is connected to the second control electrode of the second switching element; a first drive lead connected to the first back surface electrode of the first switching element; a second drive lead connected to the second main surface electrode of the second switching element; an output lead connected to the second die pad; Including, the first drive lead, the second drive lead, and the output lead are disposed between the first control lead and the second control lead; A semiconductor device according to any one of Appendix B1 to Appendix B6.

[0242] (Appendix B8) The semiconductor device according to Appendix B7, wherein the output lead is disposed between the first drive lead and the second drive lead.

[0243] (Appendix B9) The semiconductor device according to Appendix B7, wherein the second drive lead is disposed between the first drive lead and the output lead.

[0244] (Appendix B10) The plurality of leads include: a first source lead that is disposed closer to the second die pad than the first control lead and that is connected to the first main surface electrode of the first switching element; a second source lead that is disposed closer to the first die pad than the second control lead and is connected to the second main surface electrode of the second switching element; The semiconductor device according to any one of Appendix B7 to Appendix B9, comprising:

[0245] (Appendix B11) The semiconductor device according to any one of Appendix B7 to Appendix B10, wherein the thicknesses of the first drive lead, the second drive lead, and the output lead are equal to the thicknesses of the first die pad and the second die pad.

[0246] (Appendix B12) a second connecting member that connects the second main surface electrode of the second switching element and the second drive lead; A semiconductor device according to any one of Appendix B7 to Appendix B11.

[0247] (Appendix B13) The first switching element and the second switching element are silicon carbide (SiC) chips. A semiconductor device according to any one of Appendix B1 to Appendix B12.

[0248] (Appendix B14) the sealing resin has a recess extending from a side surface of the first resin along the second direction between the first control lead and the second control lead; The semiconductor device according to Appendix B10.

[0249] (Appendix B15) the first switching elements are two first switching elements mounted on the first die pad and connected in parallel to each other; the second switching element is two second switching elements mounted on the second die pad and connected in parallel with each other; A semiconductor device according to any one of Appendix B1 to Appendix B14.

[0250] (Appendix B16) a first die pad having a first main surface; a second die pad disposed apart from the first die pad in a first direction parallel to the first main surface and having a second main surface facing in the same direction as the first main surface; a first switching element mounted on the first main surface, the first switching element having a first element main surface facing the same direction as the first main surface, a first element back surface facing the opposite side to the first element main surface, a first main surface electrode and a first control electrode provided on the first element main surface, and a first back surface electrode provided on the first element back surface, the first back surface electrode being electrically connected to the first main surface; a second switching element mounted on the second main surface, the second switching element having a second element main surface facing the same direction as the second main surface, a second element back surface facing the opposite side to the second element main surface, a second main surface electrode and a second control electrode provided on the second element main surface, and a second back surface electrode provided on the second element back surface, the second back surface electrode being electrically connected to the second main surface; a first connection member connected to the first main surface electrode of the first switching element; a sealing resin having a plurality of resin side surfaces intersecting planes parallel to the first main surface and the second main surface, the sealing resin sealing the first switching element, the second switching element, the first die pad, the second die pad, and the first connection member; a first lead group including a plurality of leads protruding from a first resin side surface, among the plurality of resin side surfaces, that faces a second direction intersecting with the first direction; a second lead group including a plurality of leads protruding from a second resin side surface facing in a direction opposite to the first resin side surface; Equipped with the first control electrode is disposed on the first switching element on a side opposite to the second switching element with respect to the first principal surface electrode, and is spaced apart in the first direction on a side opposite to the second switching element with respect to the first principal surface electrode when viewed from the second direction; the second control electrode is disposed on the second switching element on a side opposite to the first switching element with respect to the second principal surface electrode, and is spaced apart in the first direction on a side opposite to the first switching element with respect to the second principal surface electrode when viewed from the second direction, the first connection member extends from the first principal surface electrode to a part of the second principal surface located between the first switching element and the second switching element; the first main surface electrode of the first switching element is electrically connected to the second die pad via the first connection member.

[0251] (Appendix B17) The plurality of leads constituting the first lead group are a first drive lead connected to the first back surface electrode of the first switching element; a second drive lead connected to the second main surface electrode of the second switching element; an output lead connected to the second die pad; Including, The plurality of leads constituting the second lead group are a first control lead connected to the first control electrode of the first switching element; a second control lead connected to the second control electrode of the second switching element; The semiconductor device according to Appendix B16, comprising:

[0252] (Appendix B18) The plurality of leads constituting the first lead group are a first drive lead connected to the first back surface electrode of the first switching element; a second drive lead connected to the second main surface electrode of the second switching element; Including, The plurality of leads constituting the second lead group are a first control lead connected to the first control electrode of the first switching element; a second control lead connected to the second control electrode of the second switching element; an output lead connected to the second die pad; Including, The semiconductor device according to appendix B16, wherein the first main surface electrode of the first switching element is connected to the second die pad via the first connection member and the output lead.

[0253] (Appendix B19) The semiconductor device according to Appendix B17 or B18, wherein the first drive lead and the second drive lead are arranged adjacent to each other.

[0254] (Appendix B20) The second lead group includes: a first source lead that is arranged closer to the center of the sealing resin than the first control lead and is connected to the first main surface electrode of the first switching element; The second control lead is disposed closer to the center of the sealing resin than the second control lead. a second source lead connected to the second main surface electrode of the second switching element; The semiconductor device according to any one of Appendix B17 to Appendix B19, comprising:

[0255] (Appendix B21) a second connecting member that connects the second main surface electrode of the second switching element and the second drive lead; The semiconductor device according to any one of Appendix B17 to Appendix B20.

[0256] (Appendix B22) a plurality of the first switching elements are mounted on the first die pad; a plurality of the second switching elements are mounted on the second die pad; A semiconductor device according to any one of Appendix B16 to Appendix B21.

[0257] (Appendix B23) The semiconductor device according to appendix B22, wherein the first switching elements and the second switching elements are arranged in the second direction.

[0258] (Appendix B24) The semiconductor device according to Appendix B22 or B23, wherein the first main surface electrodes of the plurality of first switching elements are connected to the second die pad by the first connecting members, respectively.

[0259] (Appendix B25) The semiconductor device according to any one of Appendix B16 to Appendix B24, wherein the first switching element is arranged closer to the second die pad than the center of the first die pad when viewed from the second direction.

[0260] (Appendix B26) The semiconductor device described in Appendix B25, wherein, when viewed from a direction perpendicular to the first main surface, a first distance from an edge of the first die pad closer to the second die pad to an edge of the first switching element closer to the second die pad is equal to or greater than a thickness of the first die pad.

[0261] (Appendix B27) The semiconductor device according to any one of Appendix B16 to Appendix B26, wherein the second switching element is arranged closer to the first die pad than the center of the second die pad when viewed from the second direction.

[0262] (Appendix B28) The semiconductor device described in Appendix B27, wherein, when viewed from a direction perpendicular to the second main surface, a second distance from the side of the second die pad closer to the first die pad to the side of the second switching element closer to the first die pad is equal to or greater than the thickness of the second die pad.

[0263] (Appendix B29) the first switching elements are arranged in the first direction and are disposed near a side surface of the second resin; The second switching elements are arranged in the first direction and are disposed near a side surface of the first resin. The semiconductor device according to Appendix B22.

[0264] (Appendix B30) The first switching element and the second switching element are silicon carbide (SiC) chips. A semiconductor device according to any one of Appendix B16 to Appendix B29.

[0265] (Appendix B31) the sealing resin has a recess extending from a side surface of the first resin along the second direction between the first control lead and the second control lead; The semiconductor device according to Appendix B20.

[0266] (Appendix B32) the first switching elements are two first switching elements mounted on the first die pad and connected in parallel to each other; the second switching element is two second switching elements mounted on the second die pad and connected in parallel with each other; A semiconductor device according to any one of Appendix B16 to Appendix B31.

[0267] (Appendix C1) a first die pad having a first main surface; a second die pad disposed apart from the first die pad in a first direction parallel to the first main surface and having a second main surface facing in the same direction as the first main surface; a first switching element mounted on the first main surface, the first switching element having a first element main surface facing the same direction as the first main surface, a first element back surface facing the opposite side to the first element main surface, a first main surface electrode and a first control electrode provided on the first element main surface, and a first back surface electrode provided on the first element back surface, the first back surface electrode being connected to the first main surface; a second switching element mounted on the second main surface, the second switching element having a second element main surface facing the same direction as the second main surface, a second element back surface facing the opposite side to the second element main surface, a second main surface electrode and a second control electrode provided on the second element main surface, and a second back surface electrode provided on the second element back surface, the second back surface electrode being connected to the second main surface; a first connection member that connects the first main surface electrode of the first switching element and the second die pad; a sealing resin having a plurality of resin side surfaces intersecting the first main surface and the second main surface, the sealing resin sealing the first switching element, the second switching element, the first die pad, the second die pad, and the first connection member; a plurality of leads arranged in the first direction, protruding from one of the plurality of resin side surfaces of the sealing resin that faces a second direction intersecting with the first direction, and extending in the second direction; A semiconductor device comprising:

[0268] With this configuration, the first switching element and the second switching element are connected together, and the distance of the electrical path between the first main surface electrode of the first switching element and the second die pad to which the second back surface electrode of the second switching element is connected is shortened, thereby reducing inductance.

[0269] (Appendix C2) a first die pad having a first main surface; a second die pad disposed apart from the first die pad in a first direction parallel to the first main surface and having a second main surface facing in the same direction as the first main surface; a first switching element mounted on the first main surface, the first switching element having a first element main surface facing the same direction as the first main surface, a first element back surface facing the opposite side to the first element main surface, a first main surface electrode and a first control electrode provided on the first element main surface, and a first back surface electrode provided on the first element back surface, the first back surface electrode being connected to the first main surface; a second switching element mounted on the second main surface, the second switching element having a second element main surface facing the same direction as the second main surface, a second element back surface facing the opposite side to the second element main surface, a second main surface electrode and a second control electrode provided on the second element main surface, and a second back surface electrode provided on the second element back surface, the second back surface electrode being connected to the second main surface; a first connection member connected to the first main surface electrode of the first switching element; a sealing resin having a plurality of resin side surfaces intersecting the first main surface and the second main surface, the sealing resin sealing the first switching element, the second switching element, the first die pad, the second die pad, and the first connection member; a first lead group including a plurality of leads protruding from a first resin side surface, among the plurality of resin side surfaces, that faces a second direction intersecting with the first direction; a second lead group including a plurality of leads protruding from a second resin side surface facing in a direction opposite to the first resin side surface; Equipped with the first main surface electrode of the first switching element is electrically connected to the second die pad via the first connection member.

[0270] With this configuration, the first main surface electrode of the first switching element and the second back surface electrode of the second switching element are electrically connected by the first connecting member sealed in the sealing resin, and the distance of the electrical path between the first main surface electrode of the first switching element and the second back surface electrode of the second switching element is shortened, thereby reducing inductance. [Explanation of symbols]

[0271] A10, A11, A20, A30, A40, A50, A61 to A65, A70 to A72, A80 to A85...semiconductor device, 11...first die pad, 111...main surface (first main surface), 112...rear surface (first rear surface), 113 to 116...first side surface to fourth side surface, 12...second die pad, 121...main surface (second main surface), 122...rear surface (second rear surface), 123 to 126...first side surface to fourth side surface, 14...first lead frame, 15, 15a...second lead frame, 20...first switching element, 201...element main surface (first element main surface), 202...element side surface (first element rear surface), 203-206...first element side surface to fourth element side surface, 21...first main surface electrode, 211...main source electrode, 212, 213...control source electrodes, 22...first control electrode, 23...first rear surface electrode, 30...second switching element, 301...element main surface (second element main surface), 302...element side surface (second element rear surface), 303-306...first element side surface to fourth element side surface, 31...second main surface electrode, 311...main source electrode, 312, 313...control source electrodes, 32...second control electrode, 33...second rear surface electrode, 40a, 40b, 40c...first switching element Etching element, 401...element main surface, 402...element back surface, 403...element side surface, 41...first lead (first control lead), 411...pad portion, 412...base portion, 413...substrate connection portion, 42...second lead (first source lead), 421...pad portion, 422...base portion, 423...substrate connection portion, 43...third lead (first drive lead), 431...connection portion, 432...base portion, 433...substrate connection portion, 44...fourth lead (output lead), 441...connection portion, 442...base portion, 443...substrate connection portion, 45...fifth lead (second drive lead), 451...pad portion , 452...base portion, 453...substrate connection portion, 46...sixth lead (second source lead), 461...pad portion, 462...base portion, 463...substrate connection portion, 47...seventh lead (second control lead), 471...pad portion, 472...base portion, 473...substrate connection portion, 44a...fourth lead (second drive lead), 444...pad portion, 45a...fifth lead (output lead), 454...connection portion, 50a, 50b, 50c...second switching element, 51...wire (first connection member), 52...wire (second connection member), 53...first clip (first connection member), 54,54a...second clip (second connecting member), 501...element main surface, 502...element back surface, 503...element side surface, 51...second main surface electrode, 511...main source electrode, 512...control source electrode, 513...control source electrode, 541...lead connecting portion, 542...electrode connecting portion, 543...coupling portion, 61...wire (first wire), 62...wire (third wire), 63...wire (second wire), 64...wire (fourth wire), 61a, 61 b, 61c, 61d...first connecting member, 611...die connecting portion, 612...electrode connecting portion, 62b, 62c, 62d...second connecting member, 621...lead connecting portion, 622...electrode connecting portion, 623...coupling portion, 70...sealing resin, 70a...resin portion, 701...resin main surface, 702...resin back surface, 703...first resin side surface, 704...second resin side surface, 705...third resin side surface, 706...fourth resin side surface, 707...recess, 71, 72...wire (first wire wire), 73...wire (third wire), 74, 75...wire (second wire), 76...wire (fourth wire), 81-86...solder, 90a, 90b...semiconductor device, 900...sealing resin, 900a...resin portion, 901...resin main surface, 902...resin back surface, 903-906...first resin side surface to fourth resin side surface, 907...recess, 91...switching element, 911...gate electrode, 912...control source electrode, 913...main source electrode , 914... rear electrode (drain electrode), 921 to 924... leads, 1020, 1020a... first lead group, 1021... first drive lead, 1211... connection portion, 1212... base, 1213... substrate connection portion, 1215... third side, 1022... second drive lead, 1221... pad portion, 1222... base, 1223... substrate connection portion, 1023... output lead, 1231... connection portion, 1232... base, 1233... substrate connection portion, 1030,1030a...second lead group, 1031...first control lead, 1311...pad portion, 1312...base portion, 1313...substrate connection portion, 1032...first source lead, 1321...pad portion, 1322...base portion, 1323...substrate connection portion, 1033...second source lead, 1331...pad portion, 1332...base portion, 1333...substrate connection portion, 1034...second control lead, 1341...pad portion, 1342...base portion, 1343...substrate connection portion, 1035...output lead, 1351...connection portion, 1351a...die connection portion, 1351b...pad portion, 1352...base portion, 1353...substrate connection portion, 1041...first main surface electrode, 1042...first control electrode, 1043...first rear surface electrode, 1411...main source electrode, 1412...control source electrode, 1413...control source electrode, 1052...second control electrode, 1053...second rear surface electrode, 1061...first connecting member, 1062...second connecting member, OP...external wiring, L12...distance, Lx1, Lx2...distance, X...horizontal direction (first direction), Y...vertical direction (second direction), Z...thickness direction.

Claims

1. a first die pad having a first main surface; a second die pad disposed apart from the first die pad in a first direction parallel to the first main surface and having a second main surface facing in the same direction as the first main surface; a first switching element mounted on the first main surface, the first switching element having a first element main surface facing the same direction as the first main surface, a first element back surface facing the opposite side to the first element main surface, a first main surface electrode and a first control electrode provided on the first element main surface, and a first back surface electrode provided on the first element back surface, the first back surface electrode being electrically connected to the first main surface; a second switching element mounted on the second main surface, the second switching element having a second element main surface facing the same direction as the second main surface, a second element back surface facing the opposite side to the second element main surface, a second main surface electrode and a second control electrode provided on the second element main surface, and a second back surface electrode provided on the second element back surface, the second back surface electrode being electrically connected to the second main surface; a first connection member that connects the first main surface electrode of the first switching element and the second die pad; a sealing resin having a plurality of resin side surfaces intersecting planes parallel to the first main surface and the second main surface, the sealing resin sealing the first switching element, the second switching element, the first die pad, the second die pad, and the first connection member; a plurality of leads arranged in the first direction, protruding from a first resin side surface of the sealing resin that faces a second direction intersecting the first direction, and extending in the second direction; Equipped with The plurality of leads include: a first control lead that is disposed at an end of the sealing resin on a side where the first die pad is disposed, and that is connected to the first control electrode of the first switching element; a second control lead that is disposed at an end of the sealing resin on the side where the second die pad is disposed, and that is connected to the second control electrode of the second switching element; a first drive lead connected to the first back surface electrode of the first switching element; a second drive lead connected to the second main surface electrode of the second switching element; an output lead connected to the second die pad; a first source lead that is disposed closer to the second die pad than the first control lead and that is connected to the first main surface electrode of the first switching element; a second source lead that is disposed closer to the first die pad than the second control lead and is connected to the second main surface electrode of the second switching element; Including, the sealing resin has recesses extending along the second direction from the first resin side surface between adjacent leads between the first source lead and the second source lead; the recess is disposed spaced apart from each of the adjacent leads in the first direction; Semiconductor device.

2. The semiconductor device according to claim 1 , wherein the first connection member is a plate-like member having electrical conductivity.

3. The semiconductor device according to claim 1 , wherein said first connection members are a plurality of conductive wires.

4. 4 . The semiconductor device according to claim 1 , wherein the first switching element is disposed closer to the second die pad than the center of the first die pad when viewed from the second direction.

5. 5. The semiconductor device according to claim 4, wherein, when viewed from a direction perpendicular to the first main surface, a first distance from an edge of the first die pad closer to the second die pad to an edge of the first switching element closer to the second die pad is equal to or greater than a thickness of the first die pad.

6. The semiconductor device according to claim 1 , wherein the second switching element is disposed closer to the first die pad than the center of the second die pad when viewed from the second direction.

7. 7. The semiconductor device according to claim 6, wherein, when viewed from a direction perpendicular to the second main surface, a second distance from an edge of the second die pad closer to the first die pad to an edge of the second switching element closer to the first die pad is equal to or greater than a thickness of the second die pad.

8. the first drive lead, the second drive lead, and the output lead are disposed between the first control lead and the second control lead; The semiconductor device according to claim 1 .

9. 9. The semiconductor device according to claim 8, wherein the output lead is disposed between the first drive lead and the second drive lead.

10. 9. The semiconductor device according to claim 8, wherein the second drive lead is disposed between the first drive lead and the output lead.

11. 11. The semiconductor device according to claim 8, wherein thicknesses of the first drive lead, the second drive lead, and the output lead are equal to thicknesses of the first die pad and the second die pad.

12. a second connection member that connects the second main surface electrode of the second switching element and the second drive lead; The semiconductor device according to claim 8 .

13. 13. The semiconductor device according to claim 12, wherein said second connection member has a portion extending in a direction intersecting a direction in which said first connection member extends.

14. The first switching element and the second switching element are silicon carbide (SiC) chips. The semiconductor device according to claim 1 .

15. When viewed in a direction perpendicular to the first main surface, the first die pad and the second die pad have a rectangular shape. The semiconductor device according to claim 1 .

16. the first switching elements are two first switching elements mounted on the first die pad and connected in parallel to each other, the second switching element is two second switching elements mounted on the second die pad and connected in parallel to each other; The semiconductor device according to claim 1 .

17. a first die pad having a first main surface; a second die pad disposed apart from the first die pad in a first direction parallel to the first main surface and having a second main surface facing in the same direction as the first main surface; a first switching element mounted on the first main surface, the first switching element having a first element main surface facing the same direction as the first main surface, a first element back surface facing the opposite side to the first element main surface, a first main surface electrode and a first control electrode provided on the first element main surface, and a first back surface electrode provided on the first element back surface, the first back surface electrode being electrically connected to the first main surface; a second switching element mounted on the second main surface, the second switching element having a second element main surface facing the same direction as the second main surface, a second element back surface facing the opposite side to the second element main surface, a second main surface electrode and a second control electrode provided on the second element main surface, and a second back surface electrode provided on the second element back surface, the second back surface electrode being electrically connected to the second main surface; a first connection member connected to the first main surface electrode of the first switching element; a sealing resin having a plurality of resin side surfaces intersecting planes parallel to the first main surface and the second main surface, the sealing resin sealing the first switching element, the second switching element, the first die pad, the second die pad, and the first connection member; a first lead group including a plurality of leads protruding from a first resin side surface, among the plurality of resin side surfaces, that faces a second direction intersecting with the first direction; a second lead group including a plurality of leads protruding from a second resin side surface facing in a direction opposite to the first resin side surface; Equipped with the first main surface electrode of the first switching element is electrically connected to the second die pad via the first connection member; The plurality of leads constituting the first lead group are a first drive lead connected to the first back surface electrode of the first switching element; a second drive lead connected to the second main surface electrode of the second switching element; an output lead connected to the second die pad; Including, The plurality of leads constituting the second lead group are a first control lead connected to the first control electrode of the first switching element; a second control lead connected to the second control electrode of the second switching element; a first source lead that is disposed closer to the center of the sealing resin than the first control lead and that is connected to the first main surface electrode of the first switching element; a second source lead that is disposed closer to the center of the sealing resin than the second control lead and is connected to the second main surface electrode of the second switching element; Including, the sealing resin has recesses extending from a side surface of the first resin along the second direction between the first drive lead and the second drive lead and between the second drive lead and the output lead, the recess is disposed spaced apart from each adjacent lead in the first direction; Semiconductor device.

18. 18. The semiconductor device according to claim 17, wherein the first drive lead and the second drive lead are arranged adjacent to each other.

19. a second connection member that connects the second main surface electrode of the second switching element and the second drive lead; 19. The semiconductor device according to claim 17 or 18.

20. 20. The semiconductor device according to claim 19, wherein said second connection member has a portion extending in a direction intersecting a direction in which said first connection member extends.

21. a plurality of the first switching elements are mounted on the first die pad; a plurality of the second switching elements are mounted on the second die pad; The semiconductor device according to any one of claims 17 to 20.

22. 22. The semiconductor device according to claim 21, wherein the plurality of first switching elements and the plurality of second switching elements are arranged in the second direction.

23. 23. The semiconductor device according to claim 21, wherein the first main surface electrodes of the plurality of first switching elements are connected to the second die pad by the first connecting members.

24. 24 . The semiconductor device according to claim 17 , wherein the first switching element is disposed closer to the second die pad than the center of the first die pad when viewed from the second direction.

25. 25. The semiconductor device according to claim 24, wherein, when viewed from a direction perpendicular to the first main surface, a first distance from an edge of the first die pad closer to the second die pad to an edge of the first switching element closer to the second die pad is equal to or greater than a thickness of the first die pad.

26. 26 . The semiconductor device according to claim 17 , wherein the second switching element is disposed closer to the first die pad than the center of the second die pad when viewed from the second direction.

27. 27. The semiconductor device according to claim 26, wherein, when viewed from a direction perpendicular to the second main surface, a second distance from an edge of the second die pad closer to the first die pad to an edge of the second switching element closer to the first die pad is equal to or greater than a thickness of the second die pad.

28. the first switching elements are arranged in the first direction and are disposed near a side surface of the second resin; The second switching elements are arranged in the first direction and are disposed near a side surface of the first resin.

22. The semiconductor device according to claim 21.

29. The first switching element and the second switching element are silicon carbide (SiC) chips.

29. The semiconductor device according to claim 17.

30. the first switching elements are two first switching elements mounted on the first die pad and connected in parallel to each other, the second switching element is two second switching elements mounted on the second die pad and connected in parallel to each other; 30. The semiconductor device according to claim 17.

31. When viewed in a direction perpendicular to the first main surface, the first die pad and the second die pad have a rectangular shape. The semiconductor device according to any one of claims 17 to 30.

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