Semiconductor device and method for manufacturing the same

Abstract

To provide a semiconductor device capable of reducing damage to a chip and improving reliability.SOLUTION: A semiconductor device according to an embodiment comprises a substrate, a first electrode provided on the substrate, a second electrode provided on the substrate so as to be spaced apart from the first electrode, and a sheet-shaped conductive sheet that connects the first electrode and the second electrode. The conductive sheet includes a first junction part connected to the first electrode, a second junction part connected to the second electrode, and a wiring part which is positioned between the first junction part and the second junction part, has a length in a first direction from the substrate toward the first electrode that is greater than a length of the first junction part in the first direction, and has a convex shape in a direction toward the first junction part at a first end on a side of the first junction part.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to a semiconductor device and a manufacturing method thereof. [Background technology]

[0002] There are known semiconductor devices in which wires are connected to electrodes by ball bonding. For thick wires, a method of connection by wedge bonding is known. There are also known semiconductor devices in which a conductive sheet CS is connected by wedge bonding. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2024-022890 [Patent Document 2] Patent No. 7293142 Summary of the Invention [Problem to be solved by the invention]

[0004] The problem to be solved by the present invention is to provide a semiconductor device that can reduce damage to the chip and improve reliability. [Means for solving the problem]

[0005] The semiconductor device of the embodiment has a substrate, a first electrode provided on the substrate, a second electrode provided on the substrate at a distance from the first electrode, and a sheet-like conductive sheet connecting the first electrode and the second electrode, wherein the conductive sheet has a first joint portion connecting to the first electrode, a second joint portion connecting to the second electrode, and a wiring portion located between the first joint portion and the second joint portion, the length in a first direction from the substrate to the first electrode being greater than the length of the first joint portion in the first direction, and the wiring portion having a convex shape at a first end on the side of the first joint portion in a direction toward the first joint portion.

[0006] A method for manufacturing a semiconductor device according to an embodiment includes the steps of: moving a capillary having an arc-shaped hole filled with a sheet-like conductive sheet toward a first electrode, connecting the conductive sheet to the first electrode to form a first joint; moving the capillary toward a second electrode to form a wiring portion; connecting the conductive sheet to the second electrode to form a second joint; and cutting off the conductive sheet. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a diagram illustrating an example of a circuit configuration of a semiconductor device according to a first embodiment. [Figure 2] 1 is a top view of a semiconductor device according to a first embodiment. [Figure 3] FIG. 3 is a cross-sectional view taken along the line AA′ shown in FIG. 2. [Figure 4] FIG. 2 is an enlarged cross-sectional view of a joint between an electrode and a conductive sheet. [Figure 5] FIG. 2 is an enlarged top view of a joint between an electrode and a conductive sheet. [Figure 6] FIG. 2 is an enlarged top view of a joint between an electrode and a conductive sheet. [Figure 7] FIG. 10 is a cross-sectional view of a semiconductor device according to a second embodiment. [Figure 8] FIG. 10 is an enlarged top view of a joint between an electrode and a conductive sheet of a semiconductor device according to a second embodiment. [Figure 9A] FIG. 10 is a diagram illustrating a state in which a conductive sheet is being discharged from a capillary. [Figure 9B] 10A and 10B are diagrams showing a process of lowering a capillary to connect a conductive sheet to an electrode. [Figure 9C] FIG. 10 is a diagram showing the step of raising the capillary. [Figure 9D] 10A to 10C are diagrams illustrating a process for forming a wiring portion. [Figure 10] 10A and 10B are cross-sectional views illustrating the process of connection using a capillary. [Figure 11A]FIG. 10 is a diagram showing the capillary after the wiring portion is formed. [Figure 11B] 10A and 10B are diagrams showing a process of lowering a capillary to connect a conductive sheet to an electrode. [Figure 11C] FIG. 10 is a diagram showing the step of raising the capillary. [Figure 11D] FIG. 10 is a diagram showing a process of moving a capillary. [Figure 11E] 10A and 10B are diagrams illustrating a process of separating the conductive sheet. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0009] The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Furthermore, even when the same part is shown, the dimensions and ratios may be different depending on the drawing.

[0010] The direction from the source electrode 154s to the junction Js is defined as the Z direction (first direction). The direction perpendicular to the Z direction is defined as the X direction (second direction), and the direction intersecting the X and Z directions is defined as the Y direction (third direction). Note that although the X, Y, and Z directions are shown as being orthogonal to each other in this embodiment, they are not limited to being orthogonal and may intersect with each other.

[0011] For the sake of explanation, the positive direction in the Z direction is referred to as "up" and the negative direction in the Z direction is referred to as "down." However, the "up" and "down" directions are not limited to the direction of gravity or the directions when the semiconductor device is mounted.

[0012] In the present specification and the drawings, elements similar to those described above with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted as appropriate.

[0013] (First embodiment) Fig. 1 is an example of a circuit diagram of a semiconductor device 100 according to the first embodiment. Fig. 2 shows a top view of the semiconductor device 100 according to the first embodiment. Fig. 3 is a cross-sectional view taken along line AA' shown in Fig. 2.

[0014] 1 is a photorelay that transmits, for example, AC signals or DC signals. The semiconductor device 100 has terminals 112, 114, 116, and 118. A voltage for driving the semiconductor device 100 is supplied to the terminals 112 and 114. While the semiconductor device 100 is being driven, a signal is transmitted between the terminal 116 and the terminal 118.

[0015] The semiconductor device 100 includes a light emitting element 120, a light receiving element 130, a control circuit 140, and transistors 152 and 154.

[0016] The light emitting element 120 includes at least one diode 122, which may be, for example, an LED (Light Emitting Diode). The anode and cathode are connected to the terminals 112 and 114, respectively. The diode 122 is driven by a voltage applied to the terminals 112 and 114, and emits light.

[0017] The light receiving element 130 has diodes 132 and 134, which are, for example, a PDA (Photo Diode Array). The diodes 132 and 134 receive light emitted by the diode 122 (the light receiving element 130 is optically coupled to the light emitting element 120). The light receiving element 130 may also include a phototransistor. While FIG. 1 shows an example in which two diodes are connected in series as the light receiving element 130, the number and connection method of the diodes are not limited to this. The number of diodes may be one or three or more, and at least some of the diodes may be connected in parallel.

[0018] The control circuit 140 is connected to both ends of the light receiving element 130. The control circuit 140 controls the gate potentials of the transistors 152 and 154 by the photovoltaic power of the light receiving element 130, thereby turning on the transistors 152 and 154.

[0019] The following describes an example in which transistors 152 and 154 are MOSFETs. The drain electrodes of transistors 152 and 154 are connected to terminals 116 and 118, respectively. The gate electrodes of transistors 152 and 154 are connected to the anode of light-receiving element 130 via control circuit 140. The source electrodes of transistors 152 and 154 are connected to the cathode of light-receiving element 130 via control circuit 140.

[0020] That is, the potential difference between the anode and cathode of the light-receiving element 130 is converted into a potential difference between the gate electrodes and source electrodes of the transistors 152 and 154 via the control circuit 140 .

[0021] Next, the operation of the semiconductor device 100 will be described.

[0022] First, when the potential difference between terminals 112 and 114 is smaller than a predetermined value and light-emitting element 120 is in an off state, the gate potentials of transistors 152 and 154 are lower than the threshold voltages, so the source and drain are not conducting and no signal is transmitted between terminals 116 and 118.

[0023] Subsequently, when a voltage is applied to terminals 112 and 114 to turn on the light-emitting element 120, the diode 122 of the light-emitting element 120 emits light. Diodes 132 and 134 of the light-receiving element 130 receive the light from the diode 122. In the light-receiving element 130, a potential difference occurs between the anode and cathode due to photovoltaic power, and this potential is converted into the gate potential of the transistors 152 and 154 via the control circuit 140, turning on the transistors 152 and 154.

[0024] The sources and drains of transistors 152 and 154 are conductive, transmitting signals between terminals 116 and 118 .

[0025] Then, when the voltages at terminals 112 and 114 are controlled and the light-emitting element 120 is turned off, light irradiation from the light-emitting element 120 to the light-receiving element 130 stops. The transistors 152 and 154 are turned off, and signals are no longer transmitted between the terminals 116 and 118.

[0026] That is, the semiconductor device 100 controls the transmission of signals between the terminals 116 and 118 in response to the voltages applied to the terminals 112 and 114 .

[0027] Next, the planar structure of the semiconductor device 100 according to this embodiment will be described with reference to FIG.

[0028] In addition to the elements shown in FIG. 1, the semiconductor device 100 includes a substrate 10, electrodes 113 and 115, an adhesive layer 160, wirings W1a, W1c, W2a, W2c, W3a, and W3c, and a conductive sheet CS.

[0029] Terminals 112, 114, 116, and 118, which respectively correspond to the areas surrounded by dotted lines in Fig. 2, are arranged, for example, on the lower surface of the substrate 10. Electrode 113 is connected to terminal 112 on the lower surface via a conductor (not shown). Electrode 115 is connected to terminal 114 on the lower surface via a conductive region (not shown).

[0030] The light-emitting element 120 has an anode electrode 120a and a cathode electrode 120c. The light-receiving element 130 has an anode electrode 130a and a cathode electrode 130c. The transistor 152 has a source electrode 152s, a drain electrode 152d, and a gate electrode 152g. The transistor 154 has a source electrode 154s, a drain electrode 154d, and a gate electrode 154g.

[0031] The light receiving element 130 is provided on the upper surface of the substrate 10. The light emitting element 120 is provided on the upper surface of the light receiving element 130 via an adhesive layer 160. The light emitting element 120 and the light receiving element 130 are provided in a stacked configuration. An anode electrode 120a and a cathode electrode 120c are provided on the upper surface of the light emitting element 120. An anode electrode 130a and a cathode electrode 130c are provided on the upper surface of the light receiving element 130 at a position spaced apart from the light emitting element 120.

[0032] The light emitting element 120 is located between the anode electrode 130a and the cathode electrode 130c in the Y direction, for example. A plurality of anode electrodes 130a and a plurality of cathode electrodes 130c are provided, and the light emitting element 120 is located between a plurality of anode electrodes 130a in the Y direction, for example. Providing a plurality of anode electrodes 130a and a plurality of cathode electrodes 130c is desirable in order to shorten the wiring length to the transistors 152 and 154 and reduce conduction loss.

[0033] The electrode 113 is connected to the anode electrode 120a via a wiring W1a. The electrode 115 is connected to the cathode electrode 120c via a wiring W1c. The light-emitting element 120 is driven by an electrical signal input to the anode electrode 120a and the cathode electrode 120c. Light emitted by the light-emitting element 120 reaches the opposing light-receiving element 130 via the adhesive layer 160. The adhesive layer 160 is an insulating material that is transparent to light of the frequency emitted by, for example, the diode 122. The light-emitting elements 120 and 130 are electrically insulated and optically coupled.

[0034] An optical signal received by the light receiving element 130 is converted into an electromotive force between the anode electrode 130a and the cathode electrode 130c. FIG. 2 shows an example in which two anode electrodes 130a and two cathode electrodes 130c are provided. Note that the control circuit 140 shown in FIG. 1 is not shown in FIG. 2, and the potential difference between the anode electrode 130a and the cathode electrode 130c may be a value after being controlled by the control circuit 140. In other words, the light receiving element 130 shown in FIG. 2 may include the control circuit 140.

[0035] The anode electrode 130a located in the positive Y direction in Fig. 2 is connected to the gate electrode 152g via a wiring W2a, and the anode electrode 130a located in the negative Y direction in Fig. 2 is connected to the gate electrode 154g via a wiring W3a.

[0036] The cathode electrode 130c located in the positive Y direction in Fig. 2 is connected to the source electrode 152s via a wiring W2c, and the cathode electrode 130c located in the negative Y direction in Fig. 2 is connected to the source electrode 154s via a wiring W3c.

[0037] The transistors 152 and 154 are located in the positive X-direction relative to the light-emitting element 120 and the light-receiving element 130. The transistors 152 and 154 are arranged side by side in the Y-direction. Source electrodes 152s and 154s and gate electrodes 152g and 154g are provided, spaced apart, on the upper surfaces of the transistors 152 and 154. Drain electrodes 152d and 154d are provided on the lower surfaces of the transistors 152 and 154.

[0038] A drain electrode 152d of transistor 152 is connected to bottom terminal 116 by a conductive region not shown in Figure 2. A drain electrode 154d of transistor 154 is connected to bottom terminal 118 by a conductive region not shown in Figure 2.

[0039] The photoelectromotive force of the light-receiving element 130 is converted into a potential difference between the gate electrodes 152g and 154g and the source electrodes 152s and 154s of the transistors 152 and 154. When light is irradiated onto the light-receiving element 130 and the anode electrode 130a becomes at a higher potential than the cathode electrode 130c, the potential of the gate electrodes 152g and 154g of the transistors 152 and 154 exceeds the threshold voltage, turning on the transistors 152 and 154.

[0040] The source electrode 152s and the source electrode 154s are electrically connected by a conductive sheet CS. Here, the conductive sheet CS is, for example, a sheet-like conductor different from a wire. A sheet-like conductor is, for example, a conductor that can contact an electrode over an area larger than the area in which a wire having a circular cross section contacts an electrode. More specifically, the conductive sheet CS is, for example, a conductive ribbon. The conductive sheet CS contains at least one element selected from the group consisting of Al, Cu, Ag, and Au.

[0041] The cross section of the conductive sheet CS in a plane perpendicular to the stretching direction has a long side and a short side shorter than the long side, such as a rectangle, ellipse, oval, egg shape, etc. Hereinafter, the length of the long side of the cross section of the conductive sheet CS will also be simply referred to as the width.

[0042] While the transistors 152 and 154 are in the on state, an electrical signal is transmitted between the terminal 116 and the terminal 118 via the drain electrode 152d, the source electrode 152s, the conductive sheet CS, the source electrode 154s, and the drain electrode 154d.

[0043] The conductive sheet CS has a junction Je connected to the source electrode 152s and a junction Js connected to the source electrode 154s. A wiring portion Lp is located between the junction Je and the junction Js. The wiring portion Lp is an intermediate portion located between the junction Je and the junction Js in the Y direction. The wiring portion Lp may include a portion located in the positive direction of the Z direction relative to the junctions Je and Js, and may be, for example, arch-shaped. Furthermore, at least a portion of the wiring portion Lp may be formed in a loop shape by drawing an arc. While FIG. 2 shows an example in which two conductive sheets CS are arranged side by side in the X direction, the number of conductive sheets CS is not limited to this. One conductive sheet CS or three or more conductive sheets CS may be provided.

[0044] The source electrode 152s has a first region to which the junction Je of the conductive sheet CS is connected, and a second region that is shorter in the X direction than the first region and to which the wiring W2c is connected. A gate electrode 152g is provided in the positive Y direction from the first region and in the positive X direction from the second region.

[0045] Similarly, the source electrode 154s has a first region to which the joint Js of the conductive sheet CS is connected, and a second region that is shorter in the X direction than the first region and to which the wiring W3c is connected. A gate electrode 154g is provided in the negative Y direction from the first region and in the positive X direction from the second region.

[0046] The substrate 10 is, for example, a flexible printed circuit (FPC) containing polyimide or the like.

[0047] The wirings W1a, W1c, W2a, W2c, W3a, and W3c are wires formed by, for example, wire bonding. W1a, W1c, W2a, W2c, W3a, and W3c contain at least one of Al, Cu, Ag, and Au, for example. The wirings W1a, W1c, W2a, W2c, W3a, and W3c are connected to the respective electrodes by, for example, ball bonding. The cross sections of the wirings W1a, W1c, W2a, W2c, W3a, and W3c are, for example, circular.

[0048] The semiconductor device 100 may be sealed with a sealing material (not shown).

[0049] Next, with reference to Fig. 3, a cross-sectional view taken along line AA' shown in Fig. 2 will be described. Fig. 3 shows a plurality of conductive regions 10h connecting the upper and lower surfaces of the substrate 10.

[0050] The conductive region 10h extends in the Z direction within the substrate 10. While Fig. 3 shows an example in which two conductive regions 10h are provided for each of the terminals 116 and 118, the number of conductive regions may be one, or three or more.

[0051] The terminals 112 and 114 and the electrodes 113 and 115 shown in FIG. 2 may also be connected in a similar manner.

[0052] Terminals 116 and 118 are provided on the lower surface of the substrate 10 and are connected via conductive regions 10h to drain electrodes 152d and 154d on the upper surface of the substrate 10. Transistors 152 and 154 have source electrodes 152s and 154s on their upper surfaces and drain electrodes 152d and 154d on their lower surfaces.

[0053] The conductive sheet CS has an end T, which is not shown in FIG. 2. The end T is adjacent to at least one of the joint Js and the joint Je, for example. The end T is adjacent to the joint Js in the Y direction, for example, and is located in the opposite direction from the wiring portion Lp with respect to the joint Js. The end T is spaced apart from the source electrode 154s in the Z direction.

[0054] The conductive sheet CS and the source electrode 152s are connected at a joint Je. The joint Je may or may not have an end T located on the opposite side of the joint Je from the wiring portion Lp.

[0055] The wiring portion Lp of the conductive sheet CS has a height H in the Z direction and a length L in the X direction. Here, the length L is the distance between the joint Je and the joint Js. The length L satisfies, for example, L≦1 mm. The height H satisfies, for example, H≦0.2 mm.

[0056] 4 is an enlarged cross-sectional view of the periphery of the joints Js and Je, illustrating the details of the joints between the source electrodes 152s and 154s and the conductive sheet CS.

[0057] 4 illustrates, on the left side of the conductive sheet CS, an end portion T, a wiring portion Lp, and a joint portion Js that is connected to the source electrode 154s between the end portion T and the wiring portion Lp. In at least a part of the end portion T, the length D1 in the Z direction is greater than the length D2 in the Z direction of the joint portion Js. In at least a part of the wiring portion Lp, the length D3 in the Z direction is greater than the length D2 in the Z direction of the joint portion Je.

[0058] A first end Lt1 is located at the end of the wiring portion Lp on the side of the joint Js (negative direction in the Y direction), and a step occurs at the first end Lt1 due to the difference in the length of the conductive sheet CS in the Z direction. In other words, the location where the step occurs in the Z direction can be considered as the first end Lt1 of the wiring portion Lp (the boundary between the wiring portion Lp and the joint Js). A second end Lt2 is located at the end of the wiring portion Lp on the side of the joint Je (positive direction in the Y direction), and a step occurs at the second end Lt2 due to the difference in the length of the conductive sheet CS in the Z direction. In other words, the location where the step occurs in the Z direction can be considered as the second end Lt2 of the wiring portion Lp (the boundary between the wiring portion Lp and the joint Je). The first end Lt1 is the end of the wiring portion Lp on the negative side in the Y direction, and the second end Lt2 is the end of the wiring portion Lp on the positive side in the Y direction.

[0059] Meanwhile, the third end Tt is located at the end of the end T on the side of the joint Js (positive direction in the Y direction), and a step occurs at the third end Tt due to the difference in the length of the conductive sheet CS in the Z direction. In other words, the location where the step occurs in the Z direction can be regarded as the third end Tt of the end T (the boundary between the end T and the joint Js). The third end Tt is the end of the end T in the positive direction in the Y direction. Note that the first end Lt1, second end Lt2, and third end Tt described above may be defined by the step in the Z direction, or may be defined as the boundary between the portion where the conductive sheet CS and the source electrode 154s are joined and the portion where the conductive sheet CS and the source electrode 154s are separated.

[0060] The joint portion Js has a length Lb1 in the Y direction from the third end Tt of the end portion T to the first end Lt1 of the wiring portion Lp. Note that the length Lb1 is defined at the center of the conductive sheet CS in the X direction, as will be described later with reference to FIG.

[0061] The steps at the first end Lt1, the second end Lt2, and the third end Tt are caused by differences in the Z-direction length of the conductive sheet CS. This is because, as will be explained later in the manufacturing process, the conductive sheet CS is pressed against the source electrode 154s to connect the conductive sheet CS to the source electrode 154s, and at the same time, the length D2 in the Z-direction of the joint Js becomes smaller than the original length in the Z-direction of the conductive sheet CS (e.g., length D3).

[0062] The right side of Fig. 4 shows the wiring portion Lp, the joint portion Je, and the source electrode 152s. Note that part of the wiring portion Lp of the conductive sheet CS is not shown. The length of the joint portion Je in the Z direction may be uniform in the Y direction, for example, or may gradually decrease in the positive direction of the Y direction (the direction from the wiring portion Lp toward the joint portion Je). The shape of the joint portion Je can be appropriately selected depending on the shape of the tip Cpt of the capillary Cp, which will be described later.

[0063] The joint Je does not necessarily have a portion such as an end T that is continuous with the joint Js on the side opposite the wiring portion Lp. That is, the joint Je is located at the end of the conductive sheet CS in the positive Y direction, for example, as shown in FIG.

[0064] FIG. 5 is a top view of the joints Js and Je shown in FIG. 4. A portion of the wiring portion Lp is not shown. The joint Js has a width W in the X direction and a length Lb1 in the Y direction. The joint Je has a length Lb2 in the Y direction. FIG. 5 shows an example in which at least two conductive sheets CS are arranged adjacent to each other in the X direction. Adjacent conductive sheets CS are formed side by side in the X direction with a gap Spx between them. The gap Spx is, for example, the shortest distance between the joints Js of the conductive sheets CS arranged side by side in the X direction.

[0065] In Figure 5, the cross-sectional shape of a capillary Cp, an example of a tool for forming the joint Js, is shown as the area surrounded by a dotted line. The capillary Cp has a hole Cpv inside, and the area near the tip of the capillary Cp (described later in Figures 9A-D) is cylindrical. The difference between the outer shape Cpx of the capillary Cp and the radius of the hole Cpv in the XY plane is called the wall thickness of the capillary Cp, or simply the thickness. The capillary Cp generally has a non-uniform wall thickness in the angular direction around the center of the hole Cpv in the XY plane. The minimum value of the wall thickness of the capillary Cp is called the minimum thickness Tmin. The maximum value of the wall thickness of the capillary Cp is called the maximum thickness Tmax.

[0066] The interval Spx preferably satisfies Spx≧Tmin. When Spx≧Tmin is satisfied, interference between the capillary Cp and the adjacent conductive sheet CS is suppressed during bonding of the conductive sheet CS.

[0067] The capillary Cp has a circular cross section, as shown in Figure 5. That is, the inner diameter ID of the hole Cpv and the outer diameter OD of the outer diameter Cpx are constant in the angular direction in the XY plane around the center of the hole Cpv. In this case, the capillary Cp has a uniform thickness, and the minimum thickness Tmin and maximum thickness Tmax are each equal to (OD-ID) / 2.

[0068] When forming the junction Js, the conductive sheet CS and the source electrode 154s are connected by a length equivalent to the thickness of the capillary Cp. Therefore, the length Lb1 of the junction Js in the Y direction is half the sum of the inner diameter ID and the outer diameter OD of the annulus, or equal to (OD-ID) / 2. In other words, in the case of a capillary Cp having a circular cross section, the minimum thickness Tmin and the length Lb1 are equal.

[0069] Therefore, in the case of a capillary Cp having a circular cross section, it is desirable that the spacing Spx satisfy Spx≧Lb1 in order to suppress interference between the capillary Cp and the adjacent conductive sheet CS when bonding the conductive sheet CS.

[0070] On the other hand, the spacing Spx and the length Lb1 do not necessarily satisfy Spx ≥ Lb1. For example, in the cross-sectional shape of the capillary Cp shown in Figure 6, if a portion of the annular shape is linearly cut off, the minimum thickness Tmin and the length Lb1 will be different. For example, in the XY plane, the length of the outer diameter OD in the X direction is smaller than the length of the outer diameter OD in the Y direction.

[0071] In the example shown in FIG. 6, the minimum thickness Tmin in the X direction, which is (OD-ID) / 2, is smaller than the maximum thickness Tmax in the Y direction, which is (OD-ID) / 2. The minimum thickness Tmin may be, for example, Tmax / 2 or Tmax / 3. The minimum thickness Tmin may also be Tmax / 4 or Tmax / 5. The length Lb1 of the joint Js in the Y direction is equal to the maximum thickness Tmax, for example. Therefore, the minimum thickness Tmin may be, for example, Lb1 / 2 or Lb1 / 3. The minimum thickness Tmin may also be Lb1 / 4 or Lb1 / 5.

[0072] 6, the spacing Spx and the length Lb1 can suppress interference between the capillary Cp and the adjacent conductive sheet CS during bonding of the conductive sheet CS by satisfying, for example, Spx≧Tmin=Lb1 / 5. In other words, the spacing Spx can be reduced to a value not less than Lb1 / 5.

[0073] 5, the first end Lt1 and the second end Lt2 of the wiring portion Lp of the conductive sheet CS are formed in an arc shape. Here, the arc shape may be, for example, a shape that follows a circular arc, but it is sufficient that at least a portion of the shape follows a circular arc, or the shape may follow an elliptical arc.

[0074] The first end Lt1 (the end of the wiring portion Lp in the negative Y direction) has, for example, a convex shape in the negative Y direction (the direction from the wiring portion Lp toward the joint Js). The convex shape of the end of a certain region means that it has a portion that protrudes from the inside of the region toward the outside. For example, the convex shape of the end of a certain region in the negative Y direction means that when a line is drawn between one point on the end of the region and another point, at least a part of the end of the region is located in the negative Y direction of the line.

[0075] The second end Lt2 of the wiring portion Lp (the end of the wiring portion Lp in the positive Y direction) has a concave shape, for example, in the negative Y direction (the direction from the joint Je toward the wiring portion Lp). The concave shape of the end of a certain region means that the region has a portion that is concave from the outside toward the outside. The concave shape of the end of a certain region in the positive Y direction in the negative Y direction means that when a line is drawn between one point on the end of the region and another point, at least a part of the end of the region is located in the negative Y direction of the line.

[0076] The third end Tt of the end portion T has a concave shape in the negative direction of the Y direction (the direction from the joint Js toward the end portion T), for example.

[0077] The shapes of the first end Lt1, the second end Lt2, and the third end Tt can be rephrased as follows: The first end Lt1 of the wiring portion Lp is arc-shaped, and the center of curvature of the first end Lt1 is located on the wiring portion Lp side relative to the first end Lt1. Here, the center of curvature is the center of a circle arranged so that its circumference overlaps the arc-shaped first end Lt1. Similarly, the second end Lt2 of the wiring portion Lp is arc-shaped, and the center of curvature of the second end Lt2 is located on the joint portion Je side relative to the second end Lt2. The third end Tt of the end portion T is arc-shaped, and the center of curvature of the third end Tt is located on the end portion T side relative to the third end Tt. A manufacturing method for determining the shapes of the first end Lt1, the second end Lt2, and the third end Tt will be described later with reference to FIG. 9.

[0078] The distance in the X direction between the joints Je of the multiple conductive sheets CS is equal to the distance Spx, for example. That is, the conductive sheets CS extend in a direction perpendicular to the X direction (for example, the Y direction). The length Lb2 of the joints Je in the Y direction and the distance Spx desirably satisfy Spx≧Lb2. It is sufficient to at least satisfy Spx≧Lb2 / 5. The length Lb2 of the joints Je in the Y direction is equal to the length Lb1 of the first joint in the Y direction, for example.

[0079] According to the semiconductor device 100 of this embodiment, it is possible to improve the reliability of the semiconductor device by enabling connections to be made by a plurality of conductive sheets CS in a smaller area.

[0080] By forming multiple conductive sheets CS side by side, the bonding force (unit: N) required per conductive sheet CS is smaller than when bonding using a single wider first conductive sheet CS. This is because the wider the conductive sheet CS, the greater the contact area between the conductive sheet CS and the electrode, and the greater the force (N) required to firmly bond them to establish an electrical connection. Even if the pressure (unit: Pa, force per unit area (N)) required to bond the conductive sheet CS is constant, the greater the contact area between the conductive sheet CS and the electrode, the greater the force (N) applied to the chip below the conductive sheet CS. Specifically, this reduces the risk of disconnection of internal wiring (e.g., gate wiring connected to gate electrodes 152g and 154g and located below source electrodes 152s and 154s) within the chip on which transistors 152 and 154 are provided. Therefore, providing multiple conductive sheets CS reduces damage to the chip during bonding, improving the reliability of the semiconductor device.

[0081] The following describes the ability to connect to smaller areas. The spacing Spx in the X direction between multiple conductive sheets CS can be reduced, for example, within a range not less than Lb1 / 5. Here, the range of possible values ​​for the spacing Spx is determined by the shape of the capillary Cp. As shown in FIG. 6, when the capillary Cp has a minimum thickness Tmin and a maximum thickness Tmax, the range of possible values ​​for the spacing Spx can be wider than when the capillary Cp has a constant thickness. Even for smaller spacings Spx, bonding can be performed while suppressing interference between the capillary Cp and the adjacent conductive sheet CS. That is, according to the semiconductor device of this embodiment, by selecting the size of the capillary Cp, the range of values ​​for the spacing Spx can be controlled and the spacing Spx can be reduced, allowing multiple conductive sheets CS to be provided in smaller areas.

[0082] From the above, it is possible to provide multiple conductive sheets CS even for smaller electrodes, and by reducing the force applied to the electrode and therefore the chip when bonding the conductive sheets CS, damage to the chip can be reduced, thereby improving the reliability of the semiconductor device.

[0083] Furthermore, in the semiconductor device according to this embodiment, the area connected to the electrodes can be increased by connecting the source electrodes 152s and 154s with the conductive sheet CS, compared to connecting the electrodes with a wire. Increasing the connection area reduces electrical resistance and signal transmission loss.

[0084] Furthermore, by selecting the size of the capillaries Cp, the spacing Spx between the conductive sheets CS in the X direction can be reduced. By arranging the conductive sheets CS more densely in the X direction, the electrical resistance between the source electrode 152s and the source electrode 154s can be reduced, improving the efficiency of signal transmission. For electrodes of a given size, providing multiple conductive sheets CS with a narrower spacing Spx increases the contact area between the conductive sheets CS and the electrodes, thereby reducing the electrical resistance.

[0085] The junctions Je and Js are formed by connecting the conductive sheet CS to the source electrodes 152s and 154s via the tip Cpt of the capillary Cp. The shapes of the junctions Je and Js are determined by the shape of the capillary Cp, and in particular, the third end Tt and the first end Lt1 can be controlled by selecting the shape of the capillary Cp.

[0086] (Second embodiment) Fig. 7 is a cross-sectional view showing a semiconductor device 200 according to the second embodiment. Fig. 8 is an enlarged top view of the joint between the first conductive sheet CSS and second conductive sheet CSL and the source electrode 154s in Fig. 7. Explanation of parts common to the semiconductor device 100 according to the first embodiment will be omitted. First, explanation will be given with reference to Fig. 7.

[0087] 7, the semiconductor device 200 includes a first conductive sheet CSS and a second conductive sheet CSL. The first conductive sheet CSS and the second conductive sheet CSL both connect the source electrode 152s and the source electrode 154s. The length of the first conductive sheet CSS in the Y direction is, for example, smaller than the length of the second conductive sheet CSL in the Y direction. Furthermore, at least a portion of the wiring portion LpL of the second conductive sheet CSL is located, for example, above the first conductive sheet CSS.

[0088] A plurality of first conductive sheets CSS and a plurality of second conductive sheets CSL may be formed side by side in the X direction.

[0089] The first conductive sheet CSS has a junction JsS connecting to the source electrode 152s and an end TS spaced apart from the source electrode 152s in the Z direction. The second conductive sheet CSL has a junction JsL connecting to the source electrode 152s and an end TL spaced apart from the source electrode 152s in the Z direction.

[0090] The junction JsS of the first conductive sheet CSS and the junction JsL of the second conductive sheet CSL are spaced apart in the Y direction. For example, the junction JsL is located in the negative Y direction relative to the junction JsS. The junction JsL is located farther from the source electrode 152s than the junction JsS. The end TS is located between the junction JsS and the junction JsL in the Y direction. The end TL is located in the negative Y direction relative to the junction JsL.

[0091] Furthermore, on the source electrode 152s, the joint portion JeS of the first conductive sheet CSS is located, for example, in the negative Y direction relative to the joint portion JeL of the second conductive sheet CSL. However, the first conductive sheet CSS is not necessarily formed shorter than the second conductive sheet CSL, and the joint portion JeS may be located in the positive Y direction relative to the joint portion JeL. The first conductive sheet CSS and the second conductive sheet CSL may be formed, for example, to have the same length in the Y direction.

[0092] Next, a top view will be described with reference to FIG. 8. FIG. 8 shows an example in which at least two first conductive sheets CSS are lined up in the X direction. Also, one second conductive sheet CSL is shown as an example. As shown in FIG. 8, the first conductive sheet CSS and the second conductive sheet CSL are arranged, for example, offset in the X direction. Note that the first conductive sheet CSS and the second conductive sheet CSL may at least partially overlap in the X direction, as in the cross-sectional view of FIG. 7.

[0093] 8 shows an example of the cross-sectional shape of the capillary Cp as the area surrounded by the dotted line. The cross section of the capillary Cp along the XY plane is, for example, a circular ring having an inner diameter ID. The thickness of the capillary Cp is, for example, uniform and has a minimum thickness Tmin.

[0094] The wiring portion LpS of the first conductive sheet CSS has a first end Lt1S on the side of the joint JsS (negative direction in the Y direction). The end portion TS of the first conductive sheet CSS has a third end TtS on the side of the joint JsS (positive direction in the Y direction). The wiring portion LpL of the second conductive sheet CSL has a first end Lt1L on the side of the joint JsL (negative direction in the Y direction). The end portion TL of the second conductive sheet CSL has a third end TtL on the side of the joint JsL (positive direction in the Y direction).

[0095] The length LbL of the joint JsL in the Y direction and the minimum thickness Tmin of the capillary Cp are, for example, equal. The first end Lt1L of the wiring portion Lp on the joint JsL side is, for example, arc-shaped and has a convex shape in the negative Y direction (the direction from the wiring portion LpL toward the joint JsL). The radius of curvature of the first end Lt1L is determined, for example, by the shape and inner diameter ID of the hole Cpv of the capillary Cp. The radius of curvature of the first end Lt1L is, for example, ID / 2. Conversely, the inner diameter ID can be calculated back as, for example, twice the radius of curvature of the first end Lt1L.

[0096] The spacing Spy is the distance in the Y direction between the end TS of the first conductive sheet CSS and the junction JsL of the second conductive sheet CSL. If the first conductive sheet CSS does not have the end TS on the source electrode 154s, the spacing Spy is the distance between the junction JsS and the junction JsL.

[0097] To prevent interference between the capillaries Cp and the first conductive sheet CSS when forming the joints JsL, it is desirable that the distance Spy in the Y direction between the first conductive sheet CSS and the second conductive sheet CSL satisfies, for example, Spy≧Tmin+ID. When Tmin=LbL, it is desirable that Spy≧LbL+ID.

[0098] The bonding process between the first conductive sheet CSS and the second conductive sheet CSL can start, for example, from the source electrode 152s on one side and the source electrode 154s on the other side. Therefore, the end TS and the end TL are not necessarily located on the same electrode. Figure 8 shows an example in which bonding starts from the source electrode 154s for both the first conductive sheet CSS and the second conductive sheet CSL, but the bonding method is not limited to this.

[0099] According to the semiconductor device 200 of this embodiment, by arranging multiple conductive sheets including the first conductive sheet CSS and the second conductive sheet CSL in the Y direction, it is possible to connect smaller electrodes using multiple conductive sheets CS, thereby improving the reliability of the semiconductor device.

[0100] In addition to providing multiple first conductive sheets CSS in the X direction, providing second conductive sheets CSL in the Y direction also reduces the pressure load required to bond the conductive sheets CS to the electrodes. This reduces the contact area with the electrodes per conductive sheet, thereby reducing the pressure force required for bonding. This reduces damage to the chip and improves the reliability of the semiconductor device.

[0101] Even for narrow electrodes, by satisfying, for example, Spy≧LbL+ID, interference between the first conductive sheet CSS and the capillary Cp can be suppressed when forming the joint JsL using the capillary Cp. The range of possible values ​​for the spacing Spy can be controlled by selecting the shape of the capillary Cp (minimum thickness Tmin and inner diameter ID). By reducing the spacing Spy, it is possible to provide a second conductive sheet CSL spaced apart from the first conductive sheet CSS in the Y direction even when the dimension of the source electrode 154s in the Y direction is smaller. By providing multiple conductive sheets CS in the Y direction as well, the electrical resistance between the source electrodes 152s and 154s can be reduced.

[0102] Note that by reducing the interval Spy, the first conductive sheet CSS and the second conductive sheet CSL can be closely arranged on the source electrode 154s, and further, the electrical resistance can be reduced.

[0103] Also, the first conductive sheet CSS and the second conductive sheet CSL can be provided with a shift in the X direction. By providing the second conductive sheet CSL at a corresponding position between a plurality of first conductive sheets CSS arranged in the X direction, the interference between the capillary Cp and the first conductive sheet CSS can be further suppressed during the bonding of the joint JsL. This is because the center of the capillary Cp during the bonding of the joint JsL is located between the ends TS of the first conductive sheet CSS in the X direction. By providing the first conductive sheet CSS and the second conductive sheet CSL with a shift in the X direction, not only when Spy≧LbL+ID, but also when Spy<LbL+ID, the interference between the capillary Cp and the first conductive sheet CSS can be suppressed in some cases.

[0104] According to the semiconductor device of at least one embodiment described above, by enabling connection by a plurality of conductive sheets CS in a narrower region and reducing the force applied during bonding, damage to the chip can be reduced.

[0105] Subsequently, the process of bonding the conductive sheet CS will be described while referring to FIGS. 9, FIGS. 10, and FIGS. 11. FIG. 9 shows the process until the conductive sheet CS is joined to the electrode and the formation of the wiring portion Lp is started. FIG. 10 is a cross-sectional view taken along the line B-B' shown in FIG. 9B. FIG. 11 shows the process of joining the conductive sheet CS to the electrode again after forming the wiring portion Lp and then separating the conductive sheet CS.

[0106] First, referring to FIG. 9A, the structure of the capillary Cp filled with the conductive sheet CS will be described. The capillary Cp has a hole Cpv and a tip Cpt. The conductive sheet CS is filled into the hole Cpv. The conductive sheet CS is discharged through the hole Cpv. The tip Cpt is the part of the capillary Cp closest to the electrode. The capillary Cp connects the conductive sheet CS to the source electrode 154s by pressing the conductive sheet CS at the tip Cpt. For example, if the tip Cpt has a surface parallel to the top surface of the source electrode 154s, the thickness of the junction Js can be made uniform.

[0107] The capillary Cp may be a capillary used for ball bonding, for example. The hole Cpv has, for example, a circular cross section in the XY plane, but the shape of the hole Cpv is not limited to a circular shape.

[0108] 9A shows the state in which the conductive sheet CS is being discharged from the capillary Cp. Here, the conductive sheet CS is discharged from the hole Cpv by a length sufficient for the next process. The tip of the discharged conductive sheet CS corresponds to the rear end T.

[0109] Next, as shown in FIG. 9B, the capillary Cp is lowered in the direction of the arrow. The conductive sheet CS is sandwiched between the tip Cpt and the source electrode 154s. The capillary Cp is further pressed in the direction of the arrow, connecting the conductive sheet CS and the source electrode 154s. In the process shown in FIG. 9B, ultrasonic vibrations are applied from the capillary Cp to the junction Js and the source electrode 154s. Heat may be applied to the source electrode 154s to further strengthen the bond. Applying heat to the source electrode 154s further promotes bonding between the junction Je and the source electrode 154s. The end T is not crushed by the tip Cpt. The protruding end T connects the conductive sheet CS and the source electrode 154s widely over the entire surface of the tip Cpt.

[0110] Next, the capillary is raised in the direction of the arrow shown in Fig. 9C. A junction Js is formed in the conductive sheet CS by the process shown in Fig. 9B, and the conductive sheet CS is connected to the source electrode 154s. As the capillary Cp rises, more of the conductive sheet CS is discharged from the hole Cpv.

[0111] Next, the capillary is moved in the direction of the arrow shown in FIG. 9D, thereby starting the formation of the wiring portion Lp.

[0112] The steps up to the start of forming the wiring portion Lp have been described above.

[0113] FIG. 10 is a cross-sectional view taken along line BB′ in FIG. 9B. The cross section of the capillary Cp is, for example, annular. The outer shape Cpx and hole Cpv of the capillary have arc-shaped portions. FIG. 10 shows an example in which the capillary Cp has a circular outer shape Cpx and a circular hole Cpv. The conductive sheet CS is connected to the source electrode 154s by the capillary Cp, forming a junction Js. The junction Js corresponds to the area surrounded by the dotted line.

[0114] The hole Cpv of the capillary Cp is filled with a conductive sheet CS, but the shape of the hole Cpv does not necessarily have to match the shape of the conductive sheet CS. For example, Figure 10 shows an example in which the capillary Cp has a circular hole Cpv and is filled with a conductive sheet CS having an elliptical cross section (which may be rectangular, oval, or egg-shaped). The hole Cpv may have a void, which is a portion not filled with the conductive sheet CS.

[0115] The conductive sheet CS has a long side with a length DL and a short side with a length DS. The length DL is, for example, approximately the same as the inner diameter ID. The length DS is smaller than the inner diameter ID. Although different lengths are shown in Figure 9 for perspective, the width W of the joint Js is also approximately equal to the length DL. The width W of the joint Js expands when pressed by the capillary Cp, so it may be larger than the length DL. Note that the shape of the hole Cpv of the capillary Cp may be changed to match the shape of the conductive sheet CS.

[0116] In the example shown in Figure 10, both the third end Tt and the first end Lt1 have shapes that follow a circular arc. The third end Tt is determined by the shape of the outer shape Cpx of the capillary Cp, and the first end Lt1 is determined by the shape of the hole Cpv. Note that the hole Cpv and the outer shape Cpx of the capillary Cp do not need to have similar shapes. For example, a capillary Cp with the shape shown in Figure 6 may be used.

[0117] Next, the process of separating the conductive sheet CS after the wiring portion is formed will be described with reference to FIG.

[0118] First, FIG. 11A shows how the capillary Cp is moved toward the source electrode 152s after the wiring portion Lp is formed.

[0119] FIG. 11B shows how the capillary Cp is lowered and the tip Cpt of the capillary Cp connects the conductive sheet CS and the source electrode 152s, forming a joint Je. In the process shown in FIG. 11B, ultrasonic vibrations are applied from the capillary Cp to the joint Je and the source electrode 152s. Heat may be applied to the source electrode 152s to further strengthen the bond. Applying heat to the source electrode 152s further promotes bonding between the joint Je and the source electrode 152s.

[0120] 11C, the capillary Cp rises and the conductive sheet CS is discharged. By raising the capillary Cp, the excess portion Rm is discharged continuously to the joint portion Je of the conductive sheet CS.

[0121] 11C may further include a step of reciprocating the capillary Cp in a direction parallel to the upper surface of the source electrode 152s. The reciprocating movement of the capillary Cp applies stress to the boundary between the joint portion Je and the excess portion Rm, which makes it easier to separate the joint portion Je and the excess portion Rm at the boundary in the subsequent separation step.

[0122] Next, as shown in FIG. 11D , the capillary Cp is moved, for example, along an arc centered on the junction Je. The angle θ1 between the direction perpendicular to the source electrode 152s and the direction from the junction Je toward the tip Cpt is defined as θ1. Here, the angle θ1 is, for example, greater than or equal to 45 degrees and less than 90 degrees. The angle θ1 may preferably be greater than or equal to 60 degrees and less than 90 degrees. By moving along the arc centered on the junction Je, the distance between the junction Je and the capillary Cp is kept constant during this process. In other words, there is no need for further ejection of the excess portion Rm from the capillary Cp. Note that the capillary Cp does not need to move along the arc; it is sufficient to move it in a direction intersecting the Z direction. However, moving along the arc is preferable for the following reasons. For example, when the capillary Cp is moved parallel to the XY plane and the distance between the junction Je and the capillary Cp increases, a force is applied in the direction that pulls the conductive sheet CS. Compared to this case, moving the conductive sheet CS along an arc can reduce the stress applied to the conductive sheet CS (e.g., the joint Je). Reducing the stress applied to the conductive sheet CS can reduce the risk of the conductive sheet CS being cut. Also, it can reduce the risk of the conductive sheet CS coming off the capillary Cp due to the conductive sheet being pulled.

[0123] Finally, as shown in FIG. 11E, the capillary Cp is moved in a direction at an angle θ2 relative to a direction perpendicular to the source electrode 152s. Then, the conductive sheet CS is separated at the boundary between the joint Je and the excess portion Rm. The angle θ2 is, for example, greater than or equal to 45 degrees and less than 90 degrees. The angle θ2 may preferably be greater than or equal to 60 degrees and less than 90 degrees. Note that, for example, the angles θ1 and θ2 are equal, but are not necessarily equal. After the joint Je and the excess portion Rm are separated, the excess portion Rm is used as the end T shown in FIG. 9A in the next connection process.

[0124] Next, we will explain the manufacturing process for providing multiple conductive sheets CS by repeating the bonding process of Figures 9A-D and Figures 11A-E. Two examples of the process for forming two conductive sheets CS (a first conductive sheet CS1 and a second conductive sheet CS2 provided after the first conductive sheet CS1) will be explained. First, we will explain the case where multiple conductive sheets CS are lined up in the X direction as shown in Figure 5.

[0125] First, bonding is performed from the source electrode 154s to the source electrode 152s using the first conductive sheet CS1 according to the process shown in Figures 9A-D and 11A-E. The joint Js of the first conductive sheet CS1 connected to the source electrode 154s is called the first joint. The joint Je of the first conductive sheet CS1 connected to the source electrode 152s is called the second joint.

[0126] The manufacturing process for providing multiple conductive sheets CS further includes a step of moving the capillary Cp after forming a first conductive sheet CS1 by cutting the conductive sheet on the source electrode 152s as shown in FIG. 11E. Hereinafter, the junction Js of the second conductive sheet CS2 connected to the source electrode 154s will be referred to as the third junction. The junction Je of the second conductive sheet CS2 connected to the source electrode 152s will be referred to as the fourth junction.

[0127] After the conductive sheet on the source electrode 152s is cut to form the first conductive sheet CS1, the capillary Cp is moved, for example, above the source electrode 154s. The capillary Cp is positioned above the source electrode 154s and spaced apart from the first conductive sheet CS1 in the X direction. The capillary Cp descends toward the source electrode 154s to form a third junction. The first junction and the third junction are spaced apart by a distance at least equal to or greater than the minimum thickness Tmin of the capillary Cp (Spx≧Tmin in the example of FIG. 5).

[0128] 9A-D and 11A-E, the fourth junction of the second conductive sheet CS2 is formed on the source electrode 152s, and the source electrode 154s and the source electrode 152s are electrically connected by the second conductive sheet CS2. Here, in the bonding process, the first junction of the first conductive sheet CS1 and the third junction of the second conductive sheet CS2 (and the second junction of the first conductive sheet CS1 and the fourth junction of the second conductive sheet CS2) are spaced apart in the X direction, which suppresses interference between the capillary Cp and the first conductive sheet CS1 when forming the second conductive sheet CS2. The above describes an example in which the first conductive sheet CS1 and the second conductive sheet CS2 are spaced apart in the X direction.

[0129] Next, a case will be described in which the first conductive sheet CS1 and the second conductive sheet CS2 are spaced apart in the Y direction, as in the first conductive sheet CSS and the second conductive sheet CSL shown in Fig. 8. That is, an example will be described in which the first conductive sheet CS1 is the first conductive sheet CSS in Fig. 8, and the second conductive sheet CS2 is the second conductive sheet CSL in Fig. 8.

[0130] 9A-D and 11A-E, bonding is performed from the source electrode 154s to the source electrode 152s using a first conductive sheet CS1. As shown in FIG. 11E, the method further includes a step of moving the capillary Cp after the conductive sheet is cut off on the source electrode 152s to form the first conductive sheet CS1.

[0131] The capillary Cp moves, for example, to above the source electrode 154s. The capillary Cp is positioned above the source electrode 154s and separated from the first conductive sheet CS1 in the Y direction. The capillary Cp descends toward the source electrode 154s to form a third junction. The first junction and the third junction are separated by a distance at least equal to or greater than the sum of the minimum thickness Tmin of the capillary Cp and the inner diameter ID of the capillary Cp (Spy≧Tmin+ID in the example of FIG. 8).

[0132] 9A-D and 11A-E, bonding is performed again to form the second conductive sheet CS2 from the source electrode 154s to the source electrode 152s. Here, in the bonding process, the first joint portion of the first conductive sheet CS1 and the third joint portion of the second conductive sheet CS2 (and the second joint portion of the first conductive sheet CS1 and the fourth joint portion of the second conductive sheet CS2) are spaced apart in the Y direction, which suppresses interference between the capillary Cp and the first conductive sheet CS1 when forming the second conductive sheet CS2.

[0133] In the above example, the capillary Cp is positioned on the source electrode 154s at the start of bonding of the second conductive sheet CS2. However, bonding of the second conductive sheet CS2 may be performed from the source electrode 152s to the source electrode 154s. That is, the third joint may be formed after the fourth joint. In this case, too, the first joint and the third joint (and the second joint and the fourth joint) are spaced apart in the X direction or the Y direction, which suppresses interference between the capillary Cp and the first conductive sheet CS1 during the formation of the second conductive sheet CS2.

[0134] In the process of forming multiple conductive sheets CS, including the first conductive sheet CS1 and the second conductive sheet CS2, as described above, the first conductive sheet CS1 and the second conductive sheet CS2 are spaced apart in the X or Y direction, suppressing interference between the capillary Cp and the first conductive sheet CS1. By appropriately selecting the shape and dimensions of the capillary Cp, the distance between the first conductive sheet CS1 and the second conductive sheet CS2 can be controlled. The distance between the joints of the first conductive sheet CS1 and the second conductive sheet CS2 can be reduced, for example, to the minimum thickness Tmin of the capillary Cp. This makes it possible to form multiple conductive sheets CS in a narrow area, thereby reducing the amount of force required for bonding each conductive sheet CS. This suppresses damage to the chip and improves the reliability of the semiconductor device.

[0135] The embodiments have been described above with reference to specific examples. However, the embodiments are not limited to these specific examples. In other words, designs that are appropriately modified by a person skilled in the art from these specific examples are also included within the scope of the embodiments as long as they have the characteristics of the embodiments. The elements, as well as their arrangement, materials, conditions, shapes, sizes, etc., of the above-mentioned specific examples are not limited to those exemplified and can be modified as appropriate.

[0136] Furthermore, the elements of each of the above-described embodiments can be combined to the extent technically possible, and combinations of these are also included within the scope of the embodiments as long as they include the features of the embodiments. In addition, within the scope of the concept of the embodiments, a person skilled in the art may conceive of various modifications and alterations, and it is understood that these modifications and alterations also fall within the scope of the embodiments.

[0137] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0138] 10... Substrate 10h...conductive area 100 Semiconductor device 112, 114, 116, 118... terminals 120....Light emitting element 130....Light receiving element 122, 132, 134...Diodes 140... Control circuit 152, 154...Transistor 120a, 130a...Anode electrode 120c, 130c... Cathode electrode 152s, 154s... Sausage electrode 152d, 154d···ドレイン electrode Wiring for W1a, W1c, W2a, W2c, W3a, W3c... CS, CSS, CSL, CS1, CS2... Conductive Sheets Spx, Spy... interval Je, Js, JsL, JsS... junctions T, TL, TS...end Lp, LpL, LpS... Wiring section Lt1, Lt2, Tt, Lt1L, Lt1S, TtL, TtS...end Lb1, Lb2, LbL···Longさ Cp···キャピラリー Cpv···Kong Cpt···Pre-end

Claims

1. A substrate; a first electrode provided on the substrate; a second electrode provided on the substrate and spaced apart from the first electrode; a sheet-like conductive sheet connecting the first electrode and the second electrode; and The conductive sheet is a first joint portion connected to the first electrode; a second joint portion connected to the second electrode; a wiring portion located between the first bonding portion and the second bonding portion, the wiring portion having a length in a first direction from the substrate toward the first electrode greater than a length of the first bonding portion in the first direction, and having a convex shape at a first end on the first bonding portion side toward the first bonding portion; having Semiconductor device.

2. the first electrode and the second electrode are spaced apart in a second direction in a first plane intersecting the first direction; The conductive sheets extend in the second direction and are arranged side by side in a third direction intersecting the second direction on the first plane. The semiconductor device according to claim 1 .

3. the wiring portion has a length in the first direction greater than a length in the first direction of the second joint portion, and has a concave shape at a second end on the second joint portion side in a direction from the second joint portion toward the wiring portion; The semiconductor device according to claim 2 .

4. the first end of the wiring portion is arc-shaped, and the center of curvature of the first end is located on the wiring portion side relative to the first end; The semiconductor device according to claim 2 .

5. a length Lb1 of the first joint portion in the second direction and a spacing Spx between the conductive sheets arranged in the third direction satisfy Spx≧Lb1 / 5; The semiconductor device according to claim 2 .

6. the wiring portion further includes an end portion that is continuous with the first joint portion, is formed in a direction opposite to the wiring portion with respect to the first joint portion, and has a length in the first direction that is greater than a length in the first direction of the first joint portion. The semiconductor device according to claim 2 .

7. a third end of the end portion on the side of the first joint portion has a concave shape in a direction from the first joint portion toward the end portion; The semiconductor device according to claim 6.

8. the first electrode and the second electrode are spaced apart in a second direction in a first plane intersecting the first direction; the conductive sheets include a first conductive sheet and a second conductive sheet extending in the second direction; the first joint portion of the first conductive sheet and the first joint portion of the second conductive sheet are spaced apart in the second direction; The semiconductor device according to claim 1 .

9. the first electrode and the second electrode are source electrodes provided on the upper surface of each of the plurality of transistors; each of the plurality of transistors has a gate electrode provided on the upper surface of the transistor and spaced apart from the source electrode; and a drain electrode provided on a lower surface of the transistor; The drain electrodes are connected to terminals, The gate electrodes are connected to each other. The semiconductor device according to claim 1 .

10. a step of moving a capillary having an arc-shaped hole filled with a sheet-like conductive sheet toward a first electrode, and connecting the conductive sheet to the first electrode to form a first joint; moving the capillary toward a second electrode to form a wiring portion; connecting the conductive sheet and the second electrode to form a second joint; Separating the conductive sheet; A method for manufacturing a semiconductor device comprising:

11. After the step of separating the conductive sheet, moving the capillary onto the first electrode and connecting the conductive sheet and the first electrode to form a third joint; lowering the capillary toward the second electrode to form a fourth junction; and the first joint portion and the third joint portion are spaced apart in a direction intersecting a direction in which the conductive sheet extends, a distance between the first joint and the third joint in a direction intersecting a direction in which the conductive sheet extends is equal to or greater than a minimum value of a difference between a radius of an outer shape of the capillary and a radius of the hole in a plane parallel to the first electrode; The method for manufacturing a semiconductor device according to claim 10.

12. After the step of separating the conductive sheet, moving the capillary onto the first electrode and connecting the conductive sheet and the first electrode to form a third joint; lowering the capillary toward the second electrode to form a fourth junction; and the first joint portion and the third joint portion are spaced apart in the extending direction of the conductive sheet, a distance between the first joint and the third joint in the direction in which the conductive sheet extends is equal to or greater than a length obtained by adding a minimum difference between a radius of the outer shape of the capillary and a radius of the hole in a plane parallel to the first electrode and a diameter of the hole; The method for manufacturing a semiconductor device according to claim 10.

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