Substrate processing apparatus and article manufacturing method

Abstract

To provide a technique advantageous for improving the throughput of heat treatment on a film of a substrate.SOLUTION: A substrate device comprises: a chamber; a substrate holding unit that holds a substrate having a film in an internal space of the chamber; a heater that heats the film so that the film is heat-treated; a gas analyzer that has a gas sampling unit communicating with the internal space and detects specific gas in the internal space; a gas flow forming unit that includes a supply unit for supplying inert gas to the internal space so as to form a flow of the inert gas flowing along a surface of the substrate and reaching the gas sampling unit; and a controller that determines the completion of the heat treatment on the film on the basis of output from the gas analyzer.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Patent Document 1 describes a thin-film manufacturing apparatus having an oven, a heater for heating a sample in the oven, a waste gas detector for detecting waste gas from the oven, and a heating process controller. In this thin-film manufacturing apparatus, the waste gas detector analyzes gases emitted from the oven while the sample is cured in the evacuated oven, and when a specific substance is no longer detected, the heating process controller stops the supply of power to the heater. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 7-40354 Summary of the Invention [Problem to be solved by the invention]

[0004] The concentration of the gas to be detected can vary significantly between near the surface of the sample and at a location far from the surface (for example, the inner surface of the oven). To detect the end of the heating process more quickly, the gas near the surface of the sample should be sampled and analyzed using an off-gas detector. However, in the thin-film manufacturing apparatus described in Patent Document 1, the off-gas detector analyzes the gas throughout the entire space inside the oven, which can result in a significant time delay before the condition of the sample is reflected in the analysis results. This can delay the stopping of the heating process and reduce throughput.

[0005] An object of the present invention is to provide an advantageous technique for improving the throughput of heat treatment of a film on a substrate. [Means for solving the problem]

[0006] One aspect of the present invention relates to a substrate processing apparatus, the substrate processing apparatus including a chamber, a substrate holder that holds a substrate having a film in an internal space of the chamber, a heater that heats the film so that the film is heat-treated, a gas sampling unit that communicates with the internal space, and a gas analyzer that detects a specific gas in the internal space; The apparatus is provided with a gas flow forming unit including a supply unit that supplies an inert gas to the internal space so as to form a flow of the inert gas that flows along the surface of the substrate and reaches the gas sampling unit, and a controller that determines the completion of the heat treatment of the film based on the output of the gas analyzer. [Effects of the Invention]

[0007] According to the present invention, an advantageous technique is provided for improving the throughput of thermal processing of films on substrates. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus according to a first embodiment. [Figure 2] FIG. 2 is a plan view looking downward from the AA plane in FIG. [Figure 3] FIG. 10 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus according to a second embodiment. [Figure 4] FIG. 10 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus according to a third embodiment. [Figure 5] FIG. 10 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus according to a fourth embodiment. [Figure 6] FIG. 10 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus according to a fifth embodiment. [Figure 7] FIG. 13 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus according to a sixth embodiment. [Figure 8] FIG. 13 is a diagram showing the results of a simulation of the flow of inert gas in the substrate processing apparatus according to the sixth embodiment. [Figure 9] 1A to 1C are diagrams showing a substrate processing method as a method of using the substrate processing apparatus. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe multiple features, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate identical or similar components, and redundant explanations will be omitted. In the embodiments and drawings described below, directions are indicated by an XYZ coordinate system. In the XYZ coordinate system, the XY plane is the horizontal direction, and the negative direction of the Z axis can be the vertical direction.

[0010] Fig. 1 is a schematic cross-sectional view showing the configuration of a substrate processing apparatus SPA according to an embodiment. Fig. 2 is a plan view looking downward from the AA plane in Fig. 1. The substrate processing apparatus SPA can be configured to process a substrate S having a film F. More specifically, the substrate processing apparatus SPA can be configured to heat-treat the film F on the substrate S.

[0011] The film F may be, for example, a film composed of a solution containing a solute and a solvent for forming an organic film (hereinafter referred to as a solution film). The organic film may be, for example, any of a hole injection layer, a hole transport layer, an emitting layer, an electron transport layer, and an electron injection layer of an organic light-emitting diode (OLED) device. The production of an organic EL device may include a process of forming each organic film, such as a hole injection layer, a hole transport layer, an emitting layer, an electron transport layer, and an electron injection layer, on a substrate. The process of forming each organic film on the substrate may include a coating process of disposing or coating a solution film on the substrate by a printing method or the like, a drying process of drying the solution film to form a dried film, and a heat treatment process of heat-treating the dried film. The heat treatment process may include a baking process. The solvent may have the property of evaporating in a reduced pressure environment lower than atmospheric pressure. Evaporation of the solvent may be promoted, for example, at a temperature higher than room temperature (25°C). In the drying process, the film is dried by evaporating the solvent from the film. The drying step leaves a small amount of solvent in the film, which can be removed in a subsequent heat treatment step.

[0012] The substrate processing apparatus SPA may include a chamber 10. The chamber 10 is a member that defines an internal space SP that is separated from an external space. The chamber 10 may also be understood as a member that surrounds the internal space SP. Hereinafter, the internal space SP whose outer edge is defined by the chamber 10 will also be referred to as the internal space SP of the chamber 10. The chamber 10 may include at least one gate valve 12. A substrate S to be subjected to heat treatment may be transferred from the external space of the chamber 10 to the internal space SP through the gate valve 12. Furthermore, the substrate S that has undergone heat treatment may be transferred from the internal space SP to the external space.

[0013] The substrate processing apparatus SPA may further include an exhaust pump 30 that exhausts gas from the internal space SP of the chamber 10. The exhaust pump 30 exhausts gas from the internal space SP, for example, may be adjusted so that the internal space SP is maintained at a predetermined pressure (e.g., atmospheric pressure), or may be controlled by a controller 90 (described later). The exhaust pump 30 may suck and exhaust the inert gas from the internal space SP through an exhaust port 32 that exhausts the inert gas from the internal space SP.

[0014] The substrate processing apparatus SPA may further include a substrate holding part 20 that holds a substrate S having a film F. The substrate holding part 20 is disposed in the internal space SP. The substrate processing apparatus SPA may further include a heater 70 that heats the film F of the substrate S so that the film F is thermally treated (e.g., baked).

[0015] The substrate processing apparatus SPA may include a gas analyzer 60 that detects a specific gas in the internal space SP. The gas analyzer 60 may be a residual gas analyzer (RGA) such as a mass spectrometer. The specific gas detected by the gas analyzer 60 is a gas that evaporates from the film F on the substrate S during heat treatment, i.e., a gas to be detected. More specifically, the specific gas may be a solvent (gas) that evaporates from the film F. The gas analyzer 60 has a gas sampling unit 62 that has an opening that communicates with the internal space SP.

[0016] The substrate processing apparatus SPA may further include a gas flow forming unit GFF including a supply unit 50 that supplies an inert gas to the internal space SP so as to form an inert gas flow IGF that flows along the surface of the substrate S and reaches (the opening of) the gas sampling unit 62 of the gas analyzer 60. The inert gas is typically a gas that does not react with the film F, and may be, for example, nitrogen gas. The supply unit 50 may include at least one supply nozzle 52 and supply the inert gas to the internal space SP through the at least one supply nozzle 52. The inert gas supplied to the internal space SP through the at least one supply nozzle 52 flows along the surface of the substrate S.

[0017] The substrate processing apparatus SPA may include a controller 90. The controller 90 may be configured to determine the completion of the heat treatment of the film F based on the output of the gas analyzer 60. The controller 90 may be configured to determine the completion of the heat treatment of the film F of the substrate S based on the output of the gas analyzer 60. The controller 90 may be configured to determine that the heat treatment (e.g., baking process) of the film F of the substrate S has been completed, for example, in response to the output of the gas analyzer 60 indicating that the amount of a specific gas is equal to or less than a preset amount. The controller 90 may be configured, for example, by a PLD (abbreviation for Programmable Logic Device) such as an FPGA (abbreviation for Field Programmable Gate Array), an ASIC (abbreviation for Application Specific Integrated Circuit), a general-purpose or dedicated computer with an embedded program, or a combination of all or part of these.

[0018] By forming an inert gas flow IGF that flows along the surface of the substrate S and reaches the gas sampling unit 62 of the gas analyzer 60, a gas that more accurately indicates the state of the film F on the substrate S can be supplied to the gas sampling unit 62 of the gas analyzer 60. Therefore, when the heat treatment of the film F is completed and the concentration of the specific gas released from the film F becomes sufficiently low, the concentration of the specific gas in the gas supplied to the gas sampling unit 62 of the gas analyzer 60 can also become sufficiently low. Therefore, the controller 90 can determine early that the heat treatment of the film F has been completed based on the output of the gas analyzer 60.

[0019] On the other hand, if no inert gas is supplied to the internal space SP, the inert gas flow IGF will naturally not be formed, and therefore the determination of the completion of the heat treatment of the film F based on the output of the gas analyzer 60 will be made with a considerable delay from the actual completion of the heat treatment of the film F. The same will happen even if an inert gas is supplied to the internal space SP, if the inert gas flow IGF that flows along the surface of the substrate S and reaches the gas sampling unit 62 of the gas analyzer 60 is not formed.

[0020] In one example, the supply unit 50 includes a supply nozzle 52 that sprays the inert gas into the internal space SP, and the gas flow forming unit GFF includes an outlet 32 ​​that discharges the inert gas from the internal space SP, and the outlet 32 ​​is arranged to face the supply nozzle 52. In such a configuration, as schematically shown in FIG. 2 , the gas sampling unit 62 can be arranged so that the axial direction of the gas sampling unit 62 faces the imaginary line VL that connects the supply nozzle 52 and the outlet 32.

[0021] As schematically shown in FIG. 3 , the substrate processing apparatus SPA may further include a rectifying plate 40 disposed to face the substrate S held by the substrate holding unit 20. The rectifying plate 40 may include a heating element HE. The substrate processing apparatus SPA may also include a lifting mechanism 80 that raises and lowers the rectifying plate 40. The lifting mechanism 80 may be used when transporting the substrate S to and from the substrate holding unit 20. When transporting (loading) the substrate to and unloading (unloading) the substrate S from the substrate holding unit 20, the lifting mechanism 80 may position the rectifying plate 40 at a first height in response to, for example, a command from the controller 90. Here, the first height is a height above the substrate holding unit 20 at which a substrate transport mechanism (not shown) can transport the substrate S. When the film F on the substrate S is heat-treated, the lifting mechanism 80 can, for example, in response to a command from the controller 90, place the current plate 40 at a second height that is lower than the first height.

[0022] As schematically shown in FIG. 4 , the outlet 32 ​​as part of the gas flow forming unit GFF can be disposed to face the center of the substrate S held by the substrate holding unit 20. The center of the substrate S can be a region whose center coincides with the center of the substrate S, has a shape similar to that of the substrate S, and has an area that is 30% of the area of ​​the substrate S. Alternatively, the meaning of the center of the substrate S may be explicitly defined as, for example, a region whose center coincides with the center of the substrate S, has a shape similar to that of the substrate S, and has an area that is 20% of the area of ​​the substrate S. Alternatively, the meaning of the center of the substrate S may be explicitly defined as, for example, a region whose center coincides with the center of the substrate S, has a shape similar to that of the substrate S, and has an area that is 10% of the area of ​​the substrate S.

[0023] 4, the supply unit 50 may include a plurality of supply nozzles 52 and may supply an inert gas to the internal space SP through the plurality of supply nozzles 52. The inert gas supplied to the internal space SP through the plurality of supply nozzles 52 flows along the surface of the substrate S. The plurality of supply nozzles 52 may include two supply nozzles 52 arranged opposite each other. The plurality of supply nozzles 52 may include a plurality of pairs of supply nozzles, each pair consisting of two supply nozzles 52 arranged opposite each other.

[0024] The axial direction (Z direction) of the exhaust port 32 is, for example, along the normal direction to the surface of the substrate S held by the substrate holding unit 20. The gas sampling unit 62 can be arranged near the exhaust port 32. A form in which the gas sampling unit 62 is arranged to face the center of the substrate S is a form in which the gas sampling unit 62 is arranged near the exhaust port 32.

[0025] Even in a configuration in which the exhaust port 32 as part of the gas flow forming unit GFF is arranged to face the center of the substrate S held by the substrate holding unit 20, the substrate processing apparatus SPA may include a rectifying plate 40, as schematically shown in Fig. 5. The rectifying plate 40 may be provided with an opening 42 for passing the inert gas flow IGF. The substrate processing apparatus SPA may include an elevating mechanism 80 for raising and lowering the rectifying plate 40.

[0026] 5, a current plate 40 may be added to the embodiment schematically shown in FIG. 4, which is disposed so as to face the substrate S held by the substrate holder 20. Furthermore, the current plate 40 may include a heating element HE.

[0027] As schematically shown in FIG. 6 , at least a portion of the gas sampling unit 62 may be disposed within the exhaust port 32. In another aspect, the gas sampling unit 62 may be disposed such that the central axis of at least a portion of the gas sampling unit 62 coincides with the central axis of the exhaust port 32. Even in such a configuration, the supply unit 50 may include multiple supply nozzles 52 and supply the inert gas to the internal space SP through the multiple supply nozzles 52. The inert gas supplied to the internal space SP through the multiple supply nozzles 52 flows along the surface of the substrate S. The multiple supply nozzles 52 may include two supply nozzles 52 arranged opposite each other. The multiple supply nozzles 52 may include multiple pairs of supply nozzles, each pair consisting of two supply nozzles 52 arranged opposite each other.

[0028] As shown schematically in Figure 7, a current plate 40 may be added to the embodiment shown schematically in Figure 6, which is arranged to face the substrate S held by the substrate holder 20, and the current plate 40 may further include a heating element HE.

[0029] 8 shows the results of a simulation of the inert gas flow IGF in the substrate processing apparatus SPA shown in FIG. The inert gas blown out from the supply nozzle 52 flows along the surface of the substrate S and then flows into the gas sampling unit 62 through the opening 42 in the straightening plate 40. The inert gas flow IGF can effectively transport or guide specific gases released from the film on the substrate S to the gas sampling unit 62.

[0030] FIG. 9 illustrates a substrate processing method as a method for using the substrate processing apparatus SPA. The substrate processing method illustrated in FIG. 9 can be controlled by a controller 90. In step S1, a substrate S having a film F is transferred (loaded) to a substrate holder 20 disposed in the internal space SP of the chamber 10 and placed on the substrate holder 20. In step S2, heating of the film F is initiated so that the film F is heat-treated or baked. In step S3, during the heat treatment or baking, a specific gas (solvent) is detected by the gas analyzer 60 while forming an inert gas flow IGF that flows along the surface of the substrate S and reaches the gas sampling unit 62 of the gas analyzer 60. In step S4, the completion of the heat treatment or baking of the film F is determined based on the output of the gas analyzer 60. If it is determined in step S4 that the heat treatment or baking is to be terminated, step S5 is executed; otherwise, step S3 is executed again. In step S5, the substrate S held by the substrate holder 20 is transferred (unloaded) to the external space of the chamber 10.

[0031] The substrate S transferred to the space outside the chamber 10 is then further processed, whereby a target article is obtained from the processed substrate S. Such processing may include the formation of additional films (disposition (coating), drying, baking), the formation of electrodes, the formation of a sealing film, etc.

[0032] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0033] 10: chamber, SP: internal space, 20: substrate holder, 30: discharge pump, 40: rectifier, 50: supply unit, 60: gas analyzer, 62: gas sampling unit, 70: heater, SPA: substrate processing apparatus, 90: controller, GFF: gas flow forming unit

Claims

1. a chamber; a substrate holder that holds a substrate having a film in an internal space of the chamber; a heater for heating the film so that the film is heat-treated; a gas analyzer having a gas sampling unit communicating with the internal space and detecting a specific gas in the internal space; a gas flow forming unit including a supply unit that supplies the inert gas to the internal space so as to form a flow of the inert gas that flows along the surface of the substrate and reaches the gas sampling unit; a controller that determines the end of the heat treatment of the film based on the output of the gas analyzer; A substrate processing apparatus comprising:

2. the supply unit includes at least one supply nozzle, and supplies the inert gas to the internal space through the at least one supply nozzle; the inert gas supplied into the internal space through the at least one supply nozzle flows along the surface of the substrate; The substrate processing apparatus according to claim 1 .

3. the gas flow forming unit includes an outlet that discharges the inert gas from the internal space, the discharge port is disposed to face the center of the substrate held by the substrate holder. The substrate processing apparatus according to claim 2 .

4. an axial direction of the outlet is along a normal direction to the surface of the substrate held by the substrate holder; The substrate processing apparatus according to claim 3 .

5. The gas sampling unit is disposed near the exhaust port.

5. The substrate processing apparatus according to claim 3, wherein the substrate processing apparatus is a substrate processing apparatus.

6. the gas sampling unit is disposed to face the substrate held by the substrate holding unit. The substrate processing apparatus according to claim 5 .

7. an axial direction of the gas sampling unit is along a normal direction to the surface of the substrate held by the substrate holding unit; The substrate processing apparatus according to claim 6 .

8. At least a portion of the gas sampling portion is disposed within the outlet.

5. The substrate processing apparatus according to claim 3, wherein the substrate processing apparatus is a substrate processing apparatus.

9. the at least one supply nozzle includes two supply nozzles arranged opposite each other; 9. The substrate processing apparatus according to claim 2, wherein the substrate processing apparatus is a processing chamber.

10. the supply unit includes a supply nozzle that sprays the inert gas into the internal space, and the gas flow forming unit includes an exhaust port that is disposed opposite the supply nozzle and that exhausts the inert gas from the internal space. The substrate processing apparatus according to claim 1 .

11. the axial direction of the gas sampling unit is directed to an imaginary line connecting the supply nozzle and the discharge port; The substrate processing apparatus according to claim 10 .

12. 12. The substrate processing apparatus according to claim 1, further comprising a current plate disposed opposite the substrate held by the substrate holder.

13. The flow plate includes a heating element. The substrate processing apparatus according to claim 12 .

14. Further provided is a lifting mechanism for lifting and lowering the rectifying plate.

14. The substrate processing apparatus according to claim 12 or 13.

15. the lifting mechanism positions the current vane at a first height when the substrate is transported to and from the substrate holding unit, and positions the current vane at a second height lower than the first height when the film on the substrate is heat-treated. The substrate processing apparatus according to claim 14 .

16. The heat treatment includes a treatment of baking the film.

16. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is a processing chamber.

17. transporting the substrate having the film thereon to a substrate holder disposed in the interior space of the chamber; heating the film so that the film is heat treated; a step of determining the completion of the film treatment based on an output of a gas analyzer while forming a flow of inert gas that flows along the surface of the substrate and reaches a gas sampling unit of the gas analyzer during the heat treatment; A substrate processing method comprising:

18. transferring the substrate held by the substrate holding unit from the substrate holding unit to an external space of the chamber; processing the substrate transported to the external space to obtain an article; The method of claim 17, further comprising:

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