Substrate holding device and bonding system

Abstract

To provide a technique capable of stably holding a warped substrate.SOLUTION: A substrate holding device according to an embodiment of the present disclosure includes a main body, a flow path, and a suction hole. The main body has a circular suction surface that faces a disk-shaped substrate. The flow path is formed between a pair of ribs that extend from a central region of the suction surface to a peripheral region of the suction surface. The suction hole is located on the central region side of the suction surface in the flow path. Furthermore, when the pair of ribs is in proximity to or in contact with the substrate, an airflow is formed along the flow path from the peripheral region toward the suction hole.SELECTED DRAWING: Figure 10

Description

[Technical Field]

[0001] The present disclosure relates to a substrate holding device and a bonding system. [Background technology]

[0002] Conventionally, a bonding device has been disclosed that bonds an upper substrate held by an upper chuck to a lower substrate held by a lower chuck that is movable relative to the upper chuck in horizontal and vertical directions (see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-095579 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can stably hold a warped substrate. [Means for solving the problem]

[0005] A substrate holding device according to one aspect of the present disclosure includes a main body, a flow path, and a suction hole. The main body has a circular suction surface that faces a disk-shaped substrate. The flow path is formed between a pair of ribs that extend from a central region of the suction surface to a peripheral region of the suction surface. The suction hole is located on the central region side of the suction surface in the flow path. Furthermore, when the pair of ribs are in proximity to or in contact with the substrate, an airflow is formed along the flow path from the peripheral region toward the suction hole. [Effects of the Invention]

[0006] According to the present disclosure, a warped substrate can be stably held. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic plan view showing the configuration of a bonding system according to an embodiment. [Figure 2] FIG. 2 is a schematic side view showing the configuration of the joint system according to the embodiment. [Figure 3] FIG. 3 is a schematic side view of the upper wafer and the lower wafer according to the embodiment. [Figure 4] FIG. 4 is a schematic cross-sectional view showing the configuration of a surface modification apparatus according to an embodiment. [Figure 5] FIG. 5 is a schematic plan view showing the configuration of the bonding device according to the embodiment. [Figure 6] FIG. 6 is a schematic side view showing the configuration of the joining device according to the embodiment. [Figure 7] FIG. 7 is a schematic side view showing the configuration of the upper chuck and the lower chuck of the joining device according to the embodiment. [Figure 8] FIG. 8 is a flowchart illustrating a part of the processing procedure of the processing executed by the joint system according to the embodiment. [Figure 9] FIG. 9 is a plan view showing an example of the configuration of the upper chuck according to the embodiment. [Figure 10] FIG. 10 is an enlarged plan view showing an example of the configuration of the upper chuck according to the embodiment. [Figure 11] FIG. 11 is a cross-sectional view taken along the line BB in FIG. [Figure 12] FIG. 12 is a diagram showing a simulation result of the chucking force in the upper chuck according to the embodiment. [Figure 13] FIG. 13 is a plan view showing another example of the configuration of the upper chuck according to the embodiment. [Figure 14] FIG. 14 is an enlarged plan view showing an example of the configuration of an upper chuck according to the first modification of the embodiment. [Figure 15] FIG. 15 is a cross-sectional view showing an example of the configuration of an upper chuck according to the second modification of the embodiment. [Figure 16] FIG. 16 is an enlarged plan view showing an example of the configuration of an upper chuck according to the third modification of the embodiment. [Figure 17] FIG. 17 is a diagram showing a simulation result of the chucking force in the upper chuck according to the third modification of the embodiment. [Figure 18] FIG. 18 is an enlarged plan view showing an example of the configuration of an upper chuck according to the fourth modification of the embodiment. [Figure 19] FIG. 19 is a diagram showing a simulation result of the chucking force in the upper chuck according to the fourth modification of the embodiment. [Figure 20] FIG. 20 is an enlarged plan view showing an example of the configuration of an upper chuck according to the fifth modification of the embodiment. [Figure 21] FIG. 21 is an enlarged plan view showing an example of the configuration of an upper chuck according to the sixth modification of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the substrate holding device and bonding system disclosed in the present application will be described in detail with reference to the accompanying drawings. Note that the present disclosure is not limited to the embodiments shown below. It should be noted that the drawings are schematic, and the dimensional relationships and ratios of the elements may differ from reality. Furthermore, the drawings may include parts with different dimensional relationships and ratios.

[0009] 2. Description of the Related Art A bonding apparatus has been disclosed that bonds an upper substrate held by an upper chuck to a lower substrate held by a lower chuck that is movable relative to the upper chuck in horizontal and vertical directions.

[0010] On the other hand, in the prior art, for example, when an upper substrate is held by an upper chuck, if the peripheral region of the warped substrate is far away from the upper chuck, the suction force at this peripheral region does not increase to the desired value, and there is a risk that the upper substrate may not be held stably.

[0011] Therefore, there is a need to develop a technology that can overcome the above-mentioned problems and stably hold warped substrates.

[0012] <Configuration of the joining system> First, the configuration of a bonding system 1 according to an embodiment will be described with reference to FIGS. 1 to 3. FIG. 1 is a schematic plan view showing the configuration of the bonding system 1 according to an embodiment, and FIG. 2 is a schematic side view of the same. Also, FIG. 3 is a schematic side view of an upper wafer and a lower wafer according to an embodiment. Note that, for ease of understanding, the drawings referred to below may show an orthogonal coordinate system in which the vertically upward direction is the positive direction of the Z axis.

[0013] The bonding system 1 shown in FIG. 1 forms a laminated substrate T by bonding a first substrate W1 and a second substrate W2 together.

[0014] The first substrate W1 is a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer on which multiple electronic circuits are formed. The second substrate W2 is a bare wafer on which no electronic circuits are formed. The first substrate W1 and the second substrate W2 have approximately the same diameter. In the present disclosure, electronic circuits may also be formed on the second substrate W2.

[0015] Hereinafter, the first substrate W1 will be referred to as the "upper wafer W1," the second substrate W2 will be referred to as the "lower wafer W2," and the overlapped substrate T will be referred to as the "overlapping wafer T." In other words, the upper wafer W1 is an example of the first substrate, and the lower wafer W2 is an example of the second substrate. The upper wafer W1 is also an example of a substrate. Furthermore, when the upper wafer W1 and the lower wafer W2 are collectively referred to, they may be referred to as "wafers W."

[0016] 3, of the surfaces of the upper wafer W1, the surface that is bonded to the lower wafer W2 will be referred to as a "bonding surface W1j," and the surface opposite the bonding surface W1j will be referred to as a "non-bonding surface W1n." Also, of the surfaces of the lower wafer W2, the surface that is bonded to the upper wafer W1 will be referred to as a "bonding surface W2j," and the surface opposite the bonding surface W2j will be referred to as a "non-bonding surface W2n."

[0017] 1, the bonding system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are positioned next to each other in the positive direction of the X-axis in this order. The loading / unloading station 2 and the processing station 3 are also integrally connected.

[0018] The loading / unloading station 2 includes a mounting table 10 and a transfer area 20. The mounting table 10 includes a plurality of mounting plates 11. Each mounting plate 11 is loaded with a cassette C1, C2, or C3, which stores a plurality of substrates (e.g., 25 substrates) in a horizontal position. For example, the cassette C1 stores an upper wafer W1, the cassette C2 stores a lower wafer W2, and the cassette C3 stores an overlapped wafer T.

[0019] The transport area 20 is located adjacent to the mounting table 10 on the positive side of the X-axis. In the transport area 20, a transport path 21 extending in the Y-axis direction and a transport device 22 movable along the transport path 21 are provided.

[0020] The transfer device 22 is movable not only in the Y-axis direction but also in the X-axis direction and rotatable around the Z-axis. The transfer device 22 transfers the upper wafer W1, the lower wafer W2, and the overlapping wafer T between the cassettes C1 to C3 placed on the mounting plate 11 and a third processing block G3 of the processing station 3, which will be described later.

[0021] The number of cassettes C1 to C3 placed on the placement plate 11 is not limited to that shown in the figure. In addition to the cassettes C1, C2, and C3, the placement plate 11 may also be placed with a cassette for recovering defective substrates.

[0022] Processing station 3 is provided with multiple processing blocks equipped with various devices, for example, three processing blocks G1, G2, and G3. For example, a first processing block G1 is provided on the front side of processing station 3 (the negative Y-axis side in FIG. 1), and a second processing block G2 is provided on the back side of processing station 3 (the positive Y-axis side in FIG. 1). Furthermore, a third processing block G3 is provided on the loading / unloading station 2 side of processing station 3 (the negative X-axis side in FIG. 1).

[0023] The first processing block G1 is equipped with a surface modification device 30 that modifies the bonding surfaces W1j and W2j of the upper and lower wafers W1 and W2 using plasma of a processing gas. The surface modification device 30 modifies the bonding surfaces W1j and W2j by breaking SiO2 bonds on the bonding surfaces W1j and W2j of the upper and lower wafers W1 and W2 to form single-bonded SiO, thereby modifying the bonding surfaces W1j and W2j so that they are more easily hydrophilized thereafter.

[0024] In the surface modification apparatus 30, for example, a given process gas is excited to generate plasma and ionized in a reduced pressure atmosphere. Then, ions of elements contained in the process gas are irradiated onto the bonding surfaces W1j, W2j of the upper wafer W1 and the lower wafer W2, thereby subjecting the bonding surfaces W1j, W2j to plasma processing and modification. Details of the surface modification apparatus 30 will be described later.

[0025] The second processing block G2 is equipped with a surface hydrophilizing device 40 and a bonding device 41. The surface hydrophilizing device 40 hydrophilizes the bonding surfaces W1j and W2j of the upper wafer W1 and the lower wafer W2 using, for example, pure water, and cleans the bonding surfaces W1j and W2j.

[0026] In the surface hydrophilization device 40, pure water is supplied onto the upper wafer W1 or the lower wafer W2 while the upper wafer W1 or the lower wafer W2 held by, for example, a spin chuck is being rotated. As a result, the pure water supplied onto the upper wafer W1 or the lower wafer W2 spreads over the bonding surfaces W1j, W2j of the upper wafer W1 or the lower wafer W2, thereby making the bonding surfaces W1j, W2j hydrophilic.

[0027] The bonding device 41 bonds the upper wafer W1 and the lower wafer W2 together. Details of the bonding device 41 will be described later.

[0028] As shown in FIG. 2, in the third processing block G3, transition (TRS) devices 50 and 51 for the upper wafer W1, the lower wafer W2, and the overlapped wafer T are provided in two stages in this order from the bottom.

[0029] 1, a transfer region 60 is formed in an area surrounded by the first processing block G1, the second processing block G2, and the third processing block G3. A transfer device 61 is located in the transfer region 60. The transfer device 61 has a transfer arm that is movable, for example, vertically, horizontally, and around a vertical axis.

[0030] The transfer device 61 moves within the transfer region 60 and transfers the upper wafer W1, the lower wafer W2, and the overlapping wafer T to given devices within the first processing block G1, the second processing block G2, and the third processing block G3 adjacent to the transfer region 60.

[0031] The bonding system 1 also includes a control device 4. The control device 4 controls the operation of the bonding system 1. The control device 4 is, for example, a computer, and includes a control unit 5 and a storage unit 6. The storage unit 6 stores programs for controlling various processes such as the bonding process. The control unit 5 controls the operation of the bonding system 1 by reading and executing the programs stored in the storage unit 6.

[0032] Such a program may be recorded on a computer-readable recording medium and installed from that recording medium into the storage unit 6 of the control device 4. Examples of computer-readable recording media include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0033] <Configuration of the surface modification device> Next, the configuration of the surface modification device 30 will be described with reference to Fig. 4. Fig. 4 is a schematic cross-sectional view showing the configuration of the surface modification device 30.

[0034] 4, the surface modification apparatus 30 has a processing vessel 70 whose interior can be sealed. A loading / unloading port 71 for the upper wafer W1 or the lower wafer W2 is formed on the side of the processing vessel 70 facing the transfer region 60 (see FIG. 1), and a gate valve 72 is provided at the loading / unloading port 71.

[0035] A stage 80 is located inside the processing vessel 70. The stage 80 is, for example, a lower electrode and is made of a conductive material such as aluminum. A plurality of driving units 81, each equipped with a motor, are provided below the stage 80. The driving units 81 raise and lower the stage 80.

[0036] An exhaust ring 103 having a plurality of baffle holes is positioned between the stage 80 and the inner wall of the processing vessel 70. The exhaust ring 103 allows the atmosphere in the processing vessel 70 to be uniformly exhausted from the inside of the processing vessel 70.

[0037] A power feed rod 104 made of a conductor is connected to the underside of the stage 80. A first high-frequency power supply 106 is connected to the power feed rod 104 via a matching box 105, which may be a blocking capacitor or the like. During plasma processing, a given high-frequency voltage is applied to the stage 80 from the first high-frequency power supply 106.

[0038] An upper electrode 110 is positioned inside the processing vessel 70. The top surface of the stage 80 and the bottom surface of the upper electrode 110 are positioned parallel to each other and facing each other with a given gap between them. The gap between the top surface of the stage 80 and the bottom surface of the upper electrode 110 is adjusted by a driving unit 81.

[0039] The upper electrode 110 is grounded and connected to the ground potential. Since the upper electrode 110 is grounded in this manner, damage to the lower surface of the upper electrode 110 can be suppressed during plasma processing.

[0040] In this manner, a high frequency voltage is applied from the first high frequency power supply 106 to the stage 80 serving as the lower electrode, thereby generating plasma inside the processing chamber 70 .

[0041] In the embodiment, the stage 80, the power feed rod 104, the matching box 105, the first high frequency power supply 106, the upper electrode 110, and the matching box are an example of a plasma generation mechanism that generates plasma of the processing gas in the processing chamber 70. The first high frequency power supply 106 is controlled by the control unit 5 (see FIG. 1) of the above-mentioned control device 4 (see FIG. 1).

[0042] A hollow portion 120 is formed inside the upper electrode 110. A gas supply pipe 121 is connected to the hollow portion 120. The gas supply pipe 121 is connected to a gas supply source 122 that stores a processing gas and a static elimination gas therein. The gas supply pipe 121 is also provided with a supply device group 123 that includes valves and flow rate regulators that control the flow of the processing gas and the static elimination gas.

[0043] The processing gas and static elimination gas supplied from the gas supply source 122 are flow-controlled by a supply device group 123 and introduced into the hollow portion 120 of the upper electrode 110 via a gas supply pipe 121. For example, oxygen gas, nitrogen gas, argon gas, etc. are used as the processing gas. For example, inert gas such as nitrogen gas or argon gas is used as the static elimination gas.

[0044] A baffle plate 124 for promoting uniform diffusion of the processing gas and the static elimination gas is provided inside the hollow portion 120. A large number of small holes are provided in the baffle plate 124. A large number of gas outlets 125 are formed on the lower surface of the upper electrode 110 to eject the processing gas and the static elimination gas from the hollow portion 120 into the processing vessel 70.

[0045] An intake port 130 is formed in the processing vessel 70. An intake pipe 132 communicating with a vacuum pump 131 that reduces the atmosphere inside the processing vessel 70 to a given vacuum level is connected to the intake port 130.

[0046] The upper surface of the stage 80, i.e., the surface facing the upper electrode 110, is a horizontal surface that is circular in plan view and has a diameter larger than that of the upper wafer W1 and the lower wafer W2. A stage cover 90 is placed on the upper surface of the stage 80, and the upper wafer W1 or the lower wafer W2 is placed on a placement portion 91 of the stage cover 90.

[0047] <Configuration of the joining device> Next, the configuration of the joining device 41 will be described with reference to Fig. 5 and Fig. 6. Fig. 5 is a schematic plan view showing the configuration of the joining device 41 according to the embodiment, and Fig. 6 is a schematic side view showing the configuration of the joining device 41 according to the embodiment.

[0048] 5, the bonding apparatus 41 has a processing container 190 whose interior can be sealed. A loading / unloading port 191 for the upper wafer W1, the lower wafer W2, and the overlapping wafer T is formed on the side surface of the processing container 190 on the transfer region 60 side, and an opening / closing shutter 192 is provided at the loading / unloading port 191.

[0049] The interior of the processing vessel 190 is divided into a transfer region T1 and a processing region T2 by an inner wall 193. The above-mentioned loading / unloading port 191 is formed on the side surface of the processing vessel 190 in the transfer region T1. In addition, loading / unloading ports 194 for the upper wafer W1, the lower wafer W2, and the overlapping wafer T are also formed in the inner wall 193.

[0050] Furthermore, a humidity maintaining mechanism (not shown) maintains the interior of the processing vessel 190 at a given constant humidity, thereby enabling the bonding device 41 to perform the bonding process of the upper wafer W1 and the lower wafer W2 in a stable environment.

[0051] A transition 200 is provided on the negative Y-axis side of the transfer region T1 for temporarily placing the upper wafer W1, the lower wafer W2, and the overlapping wafer T. The transition 200 is formed, for example, in two stages, and any two of the upper wafer W1, the lower wafer W2, and the overlapping wafer T can be placed on the transition 200 at the same time.

[0052] A transfer mechanism 201 is provided in the transfer region T1. The transfer mechanism 201 has a transfer arm that is movable, for example, vertically, horizontally, and around a vertical axis. The transfer mechanism 201 transfers the upper wafer W1, the lower wafer W2, and the overlapped wafer T within the transfer region T1 or between the transfer region T1 and the processing region T2.

[0053] A position adjustment mechanism 210 that adjusts the horizontal orientation of the upper wafer W1 and the lower wafer W2 is provided on the positive Y-axis side of the transfer region T1. The position adjustment mechanism 210 detects the positions of the notches of the upper wafer W1 and the lower wafer W2 with a detection unit (not shown) while rotating the upper wafer W1 and the lower wafer W2 that are held by suction on a holding unit (not shown).

[0054] As a result, the position adjustment mechanism 210 adjusts the position of the notch portion to adjust the horizontal orientation of the upper wafer W1 and the lower wafer W2. Also provided in the transfer region T1 is an inversion mechanism 220 that inverts the upper wafer W1 from top to bottom. The inversion mechanism 220 has a holding arm 221 that holds the upper wafer W1.

[0055] 6, an upper chuck 230 and a lower chuck 270 are provided in the processing region T2. ​​The upper chuck 230 suction-holds the upper wafer W1 from above. The lower chuck 270 is located below the upper chuck 230 and suction-holds the lower wafer W2 from below. The upper chuck 230 is an example of a substrate holding device and a first holding unit, and the lower chuck 270 is an example of a second holding unit.

[0056] 6, the upper chuck 230 is supported by a support member 300 provided on the ceiling surface of the processing vessel 190. The support member 300 is provided with an upper imaging unit (not shown) that captures an image of the bonding surface W2j of the lower wafer W2 held by the lower chuck 270. The upper imaging unit is provided adjacent to the upper chuck 230.

[0057] 5 and 6, the lower chuck 270 is supported by a first lower chuck moving part 310 provided below the lower chuck 270. The first lower chuck moving part 310 moves the lower chuck 270 in the horizontal direction (Y-axis direction), as will be described later. The first lower chuck moving part 310 is configured to be able to move the lower chuck 270 vertically and to rotate it around a vertical axis.

[0058] 5, the first lower chuck moving part 310 is provided with a lower imaging part (not shown) that captures an image of the bonding surface W1j of the upper wafer W1 held by the upper chuck 230. The lower imaging part is provided adjacent to the lower chuck 270.

[0059] 5 and 6, the first lower chuck moving part 310 is provided on the lower surface side of the first lower chuck moving part 310 and is attached to a pair of rails 315 extending in the horizontal direction (Y-axis direction). The first lower chuck moving part 310 is configured to be movable along the rails 315.

[0060] The pair of rails 315 is provided on the second lower chuck moving part 316. The second lower chuck moving part 316 is attached to a pair of rails 317 that are provided on the lower surface side of the second lower chuck moving part 316 and extend in the horizontal direction (X-axis direction).

[0061] The second lower chuck moving part 316 is configured to be movable along rails 317, i.e., to move the lower chuck 270 in the horizontal direction (X-axis direction). The pair of rails 317 is provided on a mounting table 318 provided on the bottom surface of the processing vessel 190.

[0062] Next, the configuration of the upper chuck 230 and the lower chuck 270 in the joining device 41 will be described with reference to Fig. 7. Fig. 7 is a schematic side view showing the configuration of the upper chuck 230 and the lower chuck 270 of the joining device 41 according to the embodiment.

[0063] The upper chuck 230 has a main body 240. The main body 240 is generally disk-shaped and has a circular suction surface 241 that faces the upper wafer W1. One or more suction holes 250 are provided in the main body 240. The suction holes 250, for example, penetrate the main body 240 in the thickness direction.

[0064] One end of the suction hole 250 is located in a central region 241a (see FIG. 10) of the suction surface 241. The one end of the suction hole 250 may be located at a position about 50 mm from the center of the suction surface 241, for example.

[0065] A vacuum pump 251 is connected to the other end of the suction hole 250. The control unit 5 (see FIG. 1) can suction-hold the upper wafer W1 by operating the vacuum pump 251. The detailed configuration of the suction surface 241 of the upper chuck 230 will be described later.

[0066] A through-hole 252 is formed in the center of the upper chuck 230, penetrating the upper chuck 230 in the thickness direction. The center of the upper chuck 230 corresponds to the center W1a of the upper wafer W1 held by suction on the upper chuck 230. A pressing pin 263 of a substrate pressing mechanism 260 is inserted into the through-hole 252.

[0067] The substrate pressing mechanism 260 is provided on the upper surface of the upper chuck 230, and presses the center W1a of the upper wafer W1 with a pressing pin 263. The pressing pin 263 is provided so as to be linearly movable along a vertical axis by a cylinder part 261 and an actuator part 262, and presses the opposing substrate (in this embodiment, the upper wafer W1) with its tip.

[0068] Specifically, the pressing pin 263 serves as a starter that first brings the center W1a of the upper wafer W1 and the center W2a of the lower wafer W2 into contact with each other when bonding the upper wafer W1 and the lower wafer W2 together, as will be described later.

[0069] The lower chuck 270 is substantially disk-shaped and is partitioned into a plurality of regions, for example, two regions 271a and 271b. These regions 271a and 271b are provided in this order from the center toward the periphery of the lower chuck 270. The region 271a has a circular shape in a plan view, and the region 271b has an annular shape in a plan view.

[0070] 7, suction holes 280a and 280b for suction-holding the lower wafer W2 are independently provided in the respective regions 271a and 271b. Different vacuum pumps 281a and 281b are connected to the respective suction holes 280a and 280b. In this manner, the lower chuck 270 is configured so that the vacuum suction of the lower wafer W2 can be set for each of the regions 271a and 271b.

[0071] Stopper members 290 are provided at a plurality of locations, for example, five locations, on the periphery of the lower chuck 270 to prevent the upper wafer W1, the lower wafer W2, and the overlapped wafer T from jumping out or sliding off the lower chuck 270.

[0072] <Processing performed by the joining system> Next, details of the processing executed by the joint system 1 according to the embodiment will be described with reference to Fig. 8. Fig. 8 is a flowchart showing part of the processing procedure executed by the joint system 1 according to the embodiment. Note that the various processing shown in Fig. 8 is executed based on the control of the control device 4.

[0073] First, a cassette C1 containing a plurality of upper wafers W1, a cassette C2 containing a plurality of lower wafers W2, and an empty cassette C3 are placed on a predetermined loading plate 11 in the carry-in / out station 2. Thereafter, the upper wafer W1 in the cassette C1 is removed by the transfer device 22 and transferred to the transition device 50 in the third processing block G3 of the processing station 3.

[0074] Next, the upper wafer W1 is transferred by the transfer device 61 to the surface modification device 30 in the first processing block G1. At this time, the gate valve 72 is opened, and the inside of the processing container 70 is exposed to atmospheric pressure. In the surface modification device 30, a processing gas such as nitrogen gas or hydrogen gas is excited into plasma and ionized in a predetermined reduced-pressure atmosphere.

[0075] The ions thus generated are irradiated onto the bonding surface W1j of the upper wafer W1, and the bonding surface W1j is subjected to plasma processing, thereby modifying the bonding surface W1j of the upper wafer W1 (step S101).

[0076] Next, the upper wafer W1 is transferred to the surface hydrophilization device 40 in the second processing block G2 by the transfer device 61. In the surface hydrophilization device 40, pure water is supplied onto the upper wafer W1 while the upper wafer W1 held by a spin chuck is being rotated.

[0077] This makes the bonding surface W1j of the upper wafer W1 hydrophilic (step S102). Furthermore, the bonding surface W1j of the upper wafer W1 is cleaned with the pure water.

[0078] Next, the upper wafer W1 is transferred to the bonding device 41 in the second processing block G2 by the transfer device 61. The upper wafer W1 transferred into the bonding device 41 is transferred to the position adjustment mechanism 210 via the transition 200. Then, the horizontal orientation of the upper wafer W1 is adjusted by the position adjustment mechanism 210 (step S103).

[0079] Thereafter, the upper wafer W1 is transferred from the position adjustment mechanism 210 to the reversing mechanism 220. Subsequently, in the transfer region T1, the reversing mechanism 220 is operated to reverse the front and rear surfaces of the upper wafer W1 (step S104). That is, the bonding surface W1j of the upper wafer W1 faces downward.

[0080] Thereafter, the reversing mechanism 220 rotates and moves to below the upper chuck 230. Then, the upper wafer W1 is transferred from the reversing mechanism 220 to the upper chuck 230. The upper wafer W1 is held by suction at the non-bonding surface W1n thereof on the upper chuck 230 (step S105).

[0081] While the upper wafer W1 is being processed in the above-described steps S101 to S105, the lower wafer W2 is being processed. First, the transfer device 22 removes the lower wafer W2 from the cassette C2 and transfers it to the transition device 50 in the processing station 3.

[0082] Next, the lower wafer W2 is transferred by the transfer device 61 to the surface modification device 30, where the bonding surface W2j of the lower wafer W2 is modified (step S106). Note that step S106 is the same process as step S101 described above.

[0083] Thereafter, the lower wafer W2 is transferred by the transfer device 61 to the surface hydrophilization device 40, where the bonding surface W2j of the lower wafer W2 is hydrophilized (step S107). Note that step S107 is the same process as step S102 described above.

[0084] Thereafter, the lower wafer W2 is transferred to the bonding device 41 by the transfer device 61. The lower wafer W2 transferred into the bonding device 41 is transferred to the position adjustment mechanism 210 via the transition 200. Then, the horizontal orientation of the lower wafer W2 is adjusted by the position adjustment mechanism 210 (step S108).

[0085] Thereafter, the lower wafer W2 is transferred to the lower chuck 270 and is suction-held by the lower chuck 270 (step S109). The lower wafer W2 is suction-held at its non-bonding surface W2n by the lower chuck 270 with its notch portion facing a predetermined direction.

[0086] Next, the horizontal positions of the upper wafer W1 held by the upper chuck 230 and the lower wafer W2 held by the lower chuck 270 are adjusted (step S110).

[0087] Next, the first lower chuck moving part 310 moves the lower chuck 270 vertically upward to adjust the vertical positions of the upper chuck 230 and the lower chuck 270. This adjusts the vertical positions of the upper wafer W1 held by the upper chuck 230 and the lower wafer W2 held by the lower chuck 270 (step S111).

[0088] At this time, the distance between the bonding surface W2j of the lower wafer W2 and the bonding surface W1j of the upper wafer W1 is a predetermined distance, for example, 80 μm to 200 μm.

[0089] Next, the pressing pin 263 of the substrate pressing mechanism 260 is lowered to press down the center W1a of the upper wafer W1, thereby pressing the center W1a of the upper wafer W1 and the center W2a of the lower wafer W2 with a predetermined force (step S112).

[0090] This initiates bonding between the pressed center W1a of the upper wafer W1 and the center W2a of the lower wafer W2. Specifically, because the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 have been modified in steps S101 and S106, van der Waals forces (intermolecular forces) are generated between the bonding surfaces W1j and W2j, and the bonding surfaces W1j and W2j are bonded together.

[0091] Furthermore, since the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 are made hydrophilic in steps S102 and S107, respectively, the OH groups between the bonding surfaces W1j and W2j form hydrogen bonds, thereby firmly bonding the bonding surfaces W1j and W2j to each other.

[0092] Thereafter, the bonding area between the upper wafer W1 and the lower wafer W2 expands from the center to the outer periphery of the upper wafer W1 and the lower wafer W2. Thereafter, with the center W1a of the upper wafer W1 and the center W2a of the lower wafer W2 pressed by the pressing pin 263, the operation of the vacuum pump 251 is stopped to stop the evacuation of the upper wafer W1 through the suction holes 250.

[0093] As a result, the upper wafer W1 held on the chucking surface 241 drops onto the lower wafer W2. Then, the bonding between the bonding surfaces W1j and W2j described above due to the van der Waals force and hydrogen bonds gradually spreads from the central portions W1a and W2a toward the outer periphery.

[0094] In this way, the entire bonding surface W1j of the upper wafer W1 and the entire bonding surface W2j of the lower wafer W2 come into contact with each other, and the upper wafer W1 and the lower wafer W2 are bonded together (step S113).

[0095] Thereafter, the pressing pin 263 is raised to the upper chuck 230. Furthermore, the vacuum pumping of the lower wafer W2 through the suction holes 280a and 280b in the lower chuck 270 is stopped, and the suction and holding of the lower wafer W2 by the lower chuck 270 is released. This completes the bonding process in the bonding device 41.

[0096] <Upper chuck configuration> Next, a detailed configuration of the upper chuck 230 according to the embodiment will be described with reference to Fig. 9 to Fig. 12. Fig. 9 is a plan view showing an example of the configuration of the upper chuck 230 according to the embodiment.

[0097] Fig. 10 is an enlarged plan view showing an example of the configuration of the upper chuck 230 according to the embodiment, and is an enlarged plan view of an area A shown in Fig. 9. Fig. 11 is a cross-sectional view taken along the line BB shown in Fig. 10.

[0098] 9, the main body 240 of the upper chuck 230 has a circular suction surface 241. The upper chuck 230 also has one or more (eight in the figure) suction holes 250 that penetrate the main body 240 in the thickness direction and are exposed from a central region 241a (see FIG. 10) of the suction surface 241.

[0099] A through-hole 252 is formed in the center of the upper chuck 230, penetrating the upper chuck 230 in the thickness direction. In addition, a circumferential rib 252a is provided on the suction surface 241, the circumferential rib 252a being positioned around the entire circumference of the through-hole 252. The circumferential rib 252a is a wall-like portion that protrudes toward the upper wafer W1 facing the suction surface 241.

[0100] 10, the adsorption surface 241 has one or more (eight in the figure) flow channels 242. The flow channels 242 are formed between a pair of ribs 243.

[0101] The rib 243 extends linearly from a central region 241a of the adsorption surface 241 to a peripheral region 241b of the adsorption surface 241. A pair of ribs 243 forming one flow path 242 are positioned on the adsorption surface 241 substantially parallel to each other, for example.

[0102] 11, the rib 243 is a wall-like portion that protrudes toward the upper wafer W1 facing the chucking surface 241. The rib 243 has the same height as the circumferential rib 252a, for example.

[0103] In the embodiment, as shown in FIG. 10, the suction holes 250 are located on the side of the central region 241a of the adsorption surface 241 in the flow path 242.

[0104] Here, in the embodiment, when the vacuum pump 251 (see FIG. 7) operates and the pair of ribs 243 come into close proximity to or into contact with the upper wafer W1, an airflow F is formed along the flow path 242 from the peripheral region 241b toward the suction hole 250, as shown in FIGS. 10 and 11.

[0105] This makes it possible to increase the flow velocity of the airflow F in the peripheral region 241b of the suction surface 241 compared to when the flow path 242 is not formed in the suction surface 241. That is, in the embodiment, since the initial velocity of the airflow F can be increased, the suction force of the upper wafer W1, which is proportional to the square of the flow velocity of the airflow F, can be increased across the entire suction surface 241.

[0106] Therefore, according to the embodiment, the warped upper wafer W1 can be stably held.

[0107] 12 is a diagram showing a simulation result of the suction force of the upper chuck 230 according to the embodiment. In the embodiment, the flow velocity of the airflow F in the peripheral region 241b of the suction surface 241 can be increased, and therefore, as shown in FIG. 12, it can be seen that the negative pressure in the peripheral region 241b of the suction surface 241 is increased.

[0108] 7, the entire upper wafer W1 may be sucked and held by one vacuum pump 251. This eliminates the need to suck the lower wafer W2 while sequentially controlling multiple regions 271a and 271b, as in the lower chuck 270, and therefore eliminates the need for equipment required for sequential control.

[0109] Therefore, according to the embodiment, it is possible to reduce the manufacturing costs and operation costs of the upper chuck 230. Note that the present disclosure is not limited to the case where the upper chuck 230 suction-holds the entire upper wafer W1 with one vacuum pump 251, and the upper chuck 230 may suction-hold the entire upper wafer W1 while sequentially controlling a plurality of vacuum pumps 251.

[0110] 9 and the like, a plurality of flow paths 242 (see FIG. 10) may be positioned radially on the suction surface 241. This allows the entire upper wafer W1 to be suctioned by the suction surface 241 approximately evenly.

[0111] Therefore, according to the embodiment, the warped upper wafer W1 can be held more stably.

[0112] Furthermore, in the embodiment, eight flow paths 242 may be arranged at 45° intervals along the circumferential direction of the chucking surface 241. Various physical properties of semiconductor wafers such as the upper wafer W1 change at 45° intervals, and by providing the flow paths 242 to accommodate these periodic changes in physical properties, it is possible to prevent damage to the upper wafer W1 during chucking due to the periodic changes in physical properties.

[0113] Therefore, according to the embodiment, the warped upper wafer W1 can be held more stably.

[0114] In the above embodiment, an example in which eight flow paths 242 are arranged at 45° intervals along the circumferential direction of the suction surface 241 has been described, but the present disclosure is not limited to such an example. Fig. 13 is a plan view showing another example of the configuration of the upper chuck 230 according to the embodiment.

[0115] 13, in the present disclosure, of the eight flow paths 242, four flow paths 242A may be arranged at 90° intervals along the circumferential direction of the adsorption surface 241, and the remaining four flow paths 242B may be positioned at two different angular intervals relative to the adjacent flow paths 242A. These two angles are, for example, 30° and 60°.

[0116] As a result, when the upper wafer W1 is warped in a saddle shape, four portions of the upper wafer W1 that are close to the suction surface 241 can be efficiently suctioned using the four flow paths 242B.

[0117] Furthermore, when saddle-shaped warped upper wafer W1 is to be sucked, the suction force from the suction holes 250 may be turned on / off or the strength of the suction force from the suction holes 250 may be varied depending on the warpage state of the upper wafer W1. This allows the saddle-shaped warped upper wafer W1 to be sucked more efficiently.

[0118] Furthermore, when saddle-warped upper wafer W1 is to be suctioned, the control unit 5 (see FIG. 1) may measure the warpage of the upper wafer W1 using a warpage measuring device separately provided inside or outside the bonding system 1 (see FIG. 1), and then suction the upper wafer W1 with the upper chuck 230. This allows the saddle-warped upper wafer W1 to be stably suctioned.

[0119] Furthermore, when adsorbing an upper wafer W1 that is warped in a saddle shape, the control unit 5 may perform the adsorption process of the upper wafer W1 while monitoring the pressure in each flow path 242 using multiple pressure gauges (not shown) that can measure the internal pressure in all of the flow paths 242.

[0120] For example, the control unit 5 may increase the suction force from the corresponding suction hole 250 for a flow path 242 with low pressure. Furthermore, the control unit 5 may store the suction force with increased pressure, and when sucking the next upper wafer W1, perform the suction process for this next upper wafer W1 using the stored suction force. This allows the upper wafer W1 that is warped into a saddle shape to be sucked more efficiently.

[0121] In addition, in the embodiment, the upper wafer W1 may be held by the suction surface 241 so that the notch portion formed in the upper wafer W1 avoids the flow path 242. For example, in the example of FIG. 9 , the upper wafer W1 may be held by the suction surface 241 so that the notch portion is positioned in the three o'clock direction of the suction surface 241.

[0122] This makes it possible to prevent the upper wafer W1 from being damaged during suction due to periodic changes in the physical properties of the upper wafer W1. Therefore, according to the embodiment, the upper wafer W1 having warpage can be held more stably.

[0123] In addition, in the embodiment, the suction surface 241 of the upper chuck 230 may have a circumferential rib 252a positioned around the entire circumference of the through-hole 252. This can prevent the suction force from the suction hole 250 from leaking through the through-hole 252, thereby making it possible to further increase the flow velocity of the airflow F in the peripheral region 241b of the suction surface 241.

[0124] Therefore, according to the embodiment, the suction force for the upper wafer W1 can be further increased by the entire suction surface 241, so that the warped upper wafer W1 can be held more stably.

[0125] <Modifications 1 and 2> Next, various modified examples of the embodiment will be described with reference to Figures 14 to 21. In the following various modified examples, the same parts as those in the embodiment will be denoted by the same reference numerals, and redundant description will be omitted.

[0126] Fig. 14 is an enlarged plan view showing an example of the configuration of the upper chuck 230 according to Modification 1 of the embodiment, and corresponds to Fig. 10 of the embodiment. As shown in Fig. 14, in Modification 1, the positional relationship between a pair of ribs 243 belonging to one flow path 242 is different from that in the above-described embodiment.

[0127] Specifically, in the first modification, the pair of ribs 243 are positioned at an angle rather than being positioned substantially parallel to each other on the adsorption surface 241. In the first modification, the width of the flow path 242 in the peripheral region 241b is smaller than the width of the flow path 242 in the central region 241a.

[0128] This allows the cross-sectional area of ​​the flow path 242 in the peripheral region 241b to be smaller than the cross-sectional area of ​​the flow path 242 in the central region 241a, thereby making it possible to further increase the flow velocity of the airflow F in the peripheral region 241b of the adsorption surface 241.

[0129] Therefore, according to the first modification, the suction force for the upper wafer W1 can be further increased by the entire suction surface 241, so that the warped upper wafer W1 can be held more stably.

[0130] In the present disclosure, the means for reducing the cross-sectional area of ​​the flow channel 242 at the peripheral region 241b is not limited to reducing the width of the flow channel 242 at the peripheral region 241b.

[0131] Fig. 15 is a cross-sectional view showing an example of the configuration of an upper chuck 231 according to Modification 2 of the embodiment. As shown in Fig. 15, in Modification 2, the height of a peripheral region 241b of a flow channel 242 is smaller than the height of a central region 241a of the flow channel 242.

[0132] This also makes it possible to make the cross-sectional area of ​​the flow path 242 in the peripheral region 241b smaller than the cross-sectional area of ​​the flow path 242 in the central region 241a, thereby making it possible to further increase the flow velocity of the airflow F in the peripheral region 241b of the adsorption surface 241.

[0133] Therefore, according to the second modification, the suction force for the upper wafer W1 can be further increased by the entire suction surface 241, so that the warped upper wafer W1 can be held more stably.

[0134] <Variation 3> Fig. 16 is an enlarged plan view showing an example of the configuration of the upper chuck 230 according to the third modification of the embodiment, and corresponds to Fig. 10 of the embodiment. Fig. 17 is a diagram showing a simulation result of the chucking force in the upper chuck 230 according to the third modification of the embodiment.

[0135] 16, in Modification 3, the configuration of the central region 241a of the suction surface 241 is different from that of the above-described embodiment. Specifically, in Modification 1, a plurality of arc ribs 244 are provided in the central region 241a of the suction surface 241.

[0136] The arc ribs 244 belong to adjacent flow paths 242 and connect adjacent ribs 243. For example, in the example of Fig. 16, the arc ribs 244 connect the ends of adjacent ribs 243 on the central region 241a side.

[0137] The arc rib 244 extends in an arc shape along the circumferential direction of the suction surface 241. The arc rib 244 is a wall-like portion that protrudes toward the upper wafer W1 facing the suction surface 241. The arc rib 244 has the same height as the rib 243, for example.

[0138] By providing multiple arc ribs 244, the multiple suction holes 250 are connected in a circular region sandwiched between the circumferential rib 252a and the multiple arc ribs 244, so that the central region 241a of the adsorption surface 241 can be depressurized more efficiently by the multiple suction holes 250, as shown in Figure 17.

[0139] Therefore, in Modification 3, the flow velocity of the airflow F in the flow path 242 and the peripheral region 241b can be further increased. Therefore, according to Modification 3, the suction force of the upper wafer W1 can be further increased over the entire suction surface 241, so that the warped upper wafer W1 can be held more stably.

[0140] In addition, in Modification 3, the arc rib 244 may be located in the central region 241a of the suction surface 241. This reduces the area of ​​the annular region sandwiched between the circumferential rib 252a and the plurality of arc ribs 244, allowing the central region 241a of the suction surface 241 to be depressurized more efficiently by the plurality of suction holes 250.

[0141] Therefore, in Modification 3, the flow velocity of the airflow F in the flow path 242 and the peripheral region 241b can be further increased. Therefore, according to Modification 3, the suction force of the upper wafer W1 can be further increased over the entire suction surface 241, so that the warped upper wafer W1 can be held more stably.

[0142] <Modifications 4 and 5> Fig. 18 is an enlarged plan view showing an example of the configuration of the upper chuck 230 according to the fourth modification of the embodiment, and corresponds to Fig. 10 of the embodiment. Fig. 19 is a diagram showing a simulation result of the suction force in the upper chuck 230 according to the fourth modification of the embodiment.

[0143] 18, in Modification 4, the configuration between the central region 241a and the peripheral region 241b of the adsorption surface 241 is different from that of Modification 3. Specifically, in Modification 4, the arc ribs 244 are located not only in the central region 241a of the adsorption surface 241 but also in the region between the central region 241a and the peripheral region 241b of the adsorption surface 241.

[0144] In the fourth modification, the rib 243 may have a notch 243a that connects the flow path 242 to an inner region 241c that is surrounded by the plurality of ribs 243 including the rib 243 and the plurality of arc ribs 244.

[0145] As a result, the inner region 241c located between the adjacent flow paths 242 can be sucked through the flow paths 242, and as shown in FIG. 19, the pressure in this inner region 241c can also be efficiently reduced.

[0146] Therefore, according to the fourth modification, the suction force for the upper wafer W1 can be further increased by the entire suction surface 241, so that the warped upper wafer W1 can be held more stably.

[0147] Furthermore, in Modification 4, the notch 243a may be located on the upstream side of the flow path 242 (i.e., on the outer periphery of the boundary) at the boundary between the flow path 242 and the inner region 241c. This increases the pressure loss between the suction hole 250 and the inner region 241c, and therefore makes it possible to suppress a decrease in the flow velocity of the airflow F (see FIG. 10) caused by connecting the flow path 242 and the inner region 241c with the notch 243a.

[0148] Therefore, according to the fourth modification, the chucking force for the upper wafer W1 can be maintained favorably, and therefore the warped upper wafer W1 can be stably held.

[0149] In the present disclosure, the position of the notch 243a is not limited to the example shown in Fig. 18. Fig. 20 is an enlarged plan view showing an example of the configuration of the upper chuck 230 according to the fifth modification of the embodiment.

[0150] As shown in FIG. 20, the cutout 243a of the present disclosure may be located at a location other than the upstream side of the flow path 242 at the boundary between the flow path 242 and the inner region 241c, for example, at the center of the boundary between the flow path 242 and the inner region 241c.

[0151] This also allows the inner region 241c located between the adjacent channels 242 to be sucked through the channels 242, thereby efficiently reducing the pressure in the inner region 241c. Therefore, according to the fifth modification, the suction force for the upper wafer W1 can be further increased over the entire suction surface 241, making it possible to more stably hold the warped upper wafer W1.

[0152] In the fourth and fifth modifications, suction holes (not shown) for detecting whether the upper wafer W1 is in contact with the arc rib 244 may be provided in the arc rib 244. This makes it possible to accurately detect the position of the upper wafer W1 on the suction surface 241 when the upper chuck 230 suctions the upper wafer W1.

[0153] In the fourth and fifth modifications, holes (not shown) for arranging various sensors may be provided in the inner region 241c.

[0154] <Variation 6> FIG. 21 is an enlarged plan view showing an example of the configuration of the upper chuck 230 according to the sixth modification of the embodiment, and corresponds to FIG. 10 of the embodiment.

[0155] 21 , in Modification 6, the configuration of the peripheral region 241b of the suction surface 241 is different from that of Modification 4. Specifically, in Modification 6, the suction surface 241 of the upper chuck 230 may further have a circumferential rib 245 located on the outer periphery side of the plurality of ribs 243 and located around the entire periphery of the suction surface 241.

[0156] This makes it possible to prevent the negative pressure between the upper wafer W1 and the chucking surface 241 from leaking from the outside of the chucking surface 241 after the entire upper wafer W1 is held by the upper chuck 230. Therefore, according to the sixth modification, the upper wafer W1 can be held more stably.

[0157] The substrate holding device (upper chuck 230) according to the embodiment includes a main body 240, a flow path 242, and suction holes 250. The main body 240 has a circular suction surface 241 that faces a disk-shaped substrate (upper wafer W1). The flow path 242 is formed between a pair of ribs 243 that extend from a central region 241a of the suction surface 241 to a peripheral region 241b of the suction surface 241. The suction holes 250 are located on the central region 241a side of the suction surface 241 in the flow path 242. Furthermore, when the pair of ribs 243 come into proximity with or contact the substrate (upper wafer W1), an airflow F is formed along the flow path 242 from the peripheral region 241b toward the suction holes 250. This allows the warped upper wafer W1 to be stably held.

[0158] Furthermore, in the substrate holding device (upper chuck 230) according to the embodiment, a plurality of flow paths 242 are provided. Adjacent ribs 243 that belong to adjacent flow paths 242 are connected to each other by arc ribs 244 that extend along the circumferential direction of the chucking surface 241. This allows the warped upper wafer W1 to be held more stably.

[0159] Furthermore, in the substrate holding device (upper chuck 230) according to the embodiment, the arc rib 244 is located in the central region 241a of the chucking surface 241. This makes it possible to hold the warped upper wafer W1 more stably.

[0160] Furthermore, in the substrate holding device (upper chuck 230) according to the embodiment, the arc rib 244 is also located in a region between the central region 241a of the suction surface 241 and the peripheral region 241b of the suction surface 241. The rib 243 has a notch 243a that connects the inner region 241c surrounded by the plurality of ribs 243 and the plurality of arc ribs 244 to the flow path 242. This makes it possible to hold the warped upper wafer W1 more stably.

[0161] Furthermore, in the substrate holding device (upper chuck 230) according to the embodiment, a plurality of flow paths 242 are provided. The plurality of flow paths 242 are positioned radially on the suction surface 241. This allows the upper wafer W1, which has warped, to be held more stably.

[0162] Furthermore, in the substrate holding device (upper chuck 230) according to the embodiment, the multiple flow paths 242 are uniformly arranged along the circumferential direction of the suction surface 241. This makes it possible to hold the warped upper wafer W1 more stably.

[0163] Furthermore, the substrate holding device (upper chuck 230) according to the embodiment is provided with eight flow paths 242. The flow paths 242 are arranged at 45° intervals along the circumferential direction of the chucking surface 241. This allows the upper wafer W1, which has warped, to be held more stably.

[0164] Furthermore, in the substrate holding device (upper chuck 230) according to the embodiment, the substrate (upper wafer W1) is held by the suction surface 241 so that the notch portion of the substrate (upper wafer W1) avoids the flow path 242. This makes it possible to hold the warped upper wafer W1 more stably.

[0165] Moreover, the substrate holding device (upper chuck 230) according to the embodiment further includes a circumferential rib 245 located around the entire periphery of the suction surface 241 on the outer periphery side of the plurality of ribs 243. This allows the upper wafer W1 to be held more stably.

[0166] The bonding system 1 according to the embodiment includes a surface modification device 30, a surface hydrophilization device 40, and a bonding device 41. The surface modification device 30 modifies the surfaces (bonding surfaces W1j, W2j) of the first substrate (upper wafer W1) and the second substrate (lower wafer W2). The surface hydrophilization device 40 hydrophilizes the modified surfaces (bonding surfaces W1j, W2j) of the first substrate (upper wafer W1) and the second substrate (lower wafer W2). The bonding device 41 bonds the hydrophilized first substrate (upper wafer W1) and the second substrate (lower wafer W2) using intermolecular forces. The bonding device 41 also includes a first holding unit (upper chuck 230) and a second holding unit (lower chuck 270). The first holding unit (upper chuck 230) suction-holds the first substrate (upper wafer W1) from above. The second holding unit (lower chuck 270) is located lower than the first holding unit (upper chuck 230) and suction-holds the second substrate (lower wafer W2) from below. The first holding unit (upper chuck 230) includes a main body 240, a flow path 242, and suction holes 250. The main body 240 has a circular suction surface 241 that faces the disk-shaped substrate (upper wafer W1). The flow path 242 is formed between a pair of ribs 243 that extend from a central region 241a of the suction surface 241 to a peripheral region 241b of the suction surface 241. The suction holes 250 are located on the central region 241a side of the suction surface 241 in the flow path 242. When the pair of ribs 243 come into proximity with or contact the substrate (upper wafer W1), an airflow F is formed along the flow path 242 from the peripheral region 241b to the suction holes 250. This allows the warped upper wafer W1 to be stably held.

[0167] Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to the above-described embodiments, and various modifications are possible without departing from the spirit of the present disclosure.

[0168] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0169] 1. Joint System 30 Surface modification equipment 40 Surface hydrophilization device 41 Bonding equipment 230 Upper chuck (an example of a substrate holding device and a first holding unit) 240 Main body 241 Adsorption surface 241a Central area 241b Peripheral Region 241c Inner area 242 Channel 243 Ribs 243a Notch 244 Circular Rib 245 All-around rib 270 Lower chuck (an example of the second holding part) F Airflow W1 Upper wafer (an example of a substrate and a first substrate) W2 Lower wafer (an example of the second substrate)

Claims

1. a main body having a circular suction surface facing the disk-shaped substrate; a flow path formed between a pair of ribs extending from a central region of the adsorption surface to a peripheral region of the adsorption surface; a suction hole located on a central region side of the adsorption surface in the flow path; Equipped with When the pair of ribs are brought into proximity with or into contact with the substrate, an airflow is formed along the flow path from the peripheral region toward the suction hole. Substrate holding device.

2. The flow path is provided in plurality, The ribs that belong to the flow paths that are adjacent to each other and are adjacent to each other are connected by arc ribs that extend along the circumferential direction of the adsorption surface. The substrate holding device according to claim 1 .

3. The arc rib is located in the central region of the suction surface. The substrate holding device according to claim 2 .

4. the arc rib is also located in a region between the central region of the suction surface and the peripheral region of the suction surface, The rib has a notch that connects an inner region surrounded by the plurality of ribs and the plurality of arc ribs to the flow path. The substrate holding device according to claim 3 .

5. The flow path is provided in plurality, The plurality of flow paths are arranged radially on the adsorption surface. The substrate holding device according to any one of claims 1 to 4.

6. The plurality of flow paths are uniformly arranged along the circumferential direction of the adsorption surface. The substrate holding device according to claim 5 .

7. The flow paths are provided in eight numbers, The plurality of flow paths are arranged at 45° intervals along the circumferential direction of the adsorption surface. The substrate holding device according to claim 6 .

8. The substrate is held on the suction surface so that the notch portion of the substrate avoids the flow path. The substrate holding device according to any one of claims 1 to 4.

9. a circumferential rib located on the outer circumferential side of the plurality of ribs and extending along the entire periphery of the suction surface. The substrate holding device according to any one of claims 1 to 4.

10. a surface modification device for modifying the surfaces of the first substrate and the second substrate; a surface hydrophilization device for hydrophilizing the modified surfaces of the first substrate and the second substrate; a bonding device that bonds the hydrophilized first substrate and the hydrophilized second substrate together by intermolecular forces; Equipped with The joining device is a first holding unit that suction-holds the first substrate from above; a second holding portion located below the first holding portion and configured to suction-hold the second substrate from below; and The first holding portion is a main body having a circular suction surface facing the disk-shaped substrate; a flow path formed between a pair of ribs extending from a central region of the adsorption surface to a peripheral region of the adsorption surface; a suction hole located on a central region side of the adsorption surface in the flow path; Equipped with When the pair of ribs are brought into proximity with or into contact with the substrate, an airflow is formed along the flow path from the peripheral region toward the suction hole. Joining system.

Images