Mask and method of manufacturing organic device

Abstract

To provide a mask which can make uniform the thickness of a vapor deposition material attaching to a substrate.SOLUTION: A mask 20 includes a first layer including at least one first opening, and a metal layer 40 including a plurality of second openings 41 overlapped with the first opening in a plane view. The metal layer 40 includes an effective region formed with a plurality of second openings 41, and a peripheral region surrounding the effective region. The peripheral region has a section 48A surrounded by a recess or a lost part 43.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] SUMMARY OF THE INVENTION Embodiments of the present disclosure relate to methods for manufacturing masks and organic devices. [Background technology]

[0002] Vapor deposition is known as a method for forming precise patterns. In vapor deposition, a mask with openings formed therein is first combined with a substrate. Then, a vapor deposition material is applied to the substrate through the openings in the mask. This allows a vapor deposition layer containing the vapor deposition material to be formed on the substrate in a pattern corresponding to the pattern of the openings in the mask. Vapor deposition is used, for example, as a method for forming pixels of organic electroluminescence (EL) display devices. Patent Document 1 discloses a mask used in vapor deposition.

[0003] The mask of Patent Document 1 includes a mask chip and a support that supports the mask chip. The mask chip has a plurality of openings formed therein, each corresponding to a pixel. The mask support has an opening formed therein. Each opening in the mask support corresponds to, for example, one screen of an organic EL display device. In a plan view, each opening in the mask support overlaps with a plurality of openings in the mask chip. During the deposition process, the mask chip faces the substrate, and the mask support faces the deposition source. The deposition material flying from the deposition source passes through the openings in the mask support and then through the openings in the mask chip to adhere to the substrate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-042133 Summary of the Invention [Problem to be solved by the invention]

[0005] It is desirable to make the thickness of the deposition material adhered to the substrate uniform. For example, it is desirable to reduce the difference in thickness between multiple deposition layers formed on the substrate within an area corresponding to one screen of an organic EL display device. By making the thicknesses of the multiple deposition layers uniform, it is possible to make the display quality within the screen uniform. For example, it is possible to make the screen emit light uniformly. However, according to the findings of the present inventors, the thickness of the deposition layer near the outer edge of the area tends to be greater than the thickness of the deposition layer in the center of the area.

[0006] An embodiment of the present disclosure aims to manufacture a mask that can effectively solve such problems. [Means for solving the problem]

[0007] A mask according to one embodiment of the present disclosure may include: a first layer including a first surface, a second surface located opposite the first surface, and at least one first opening penetrating from the first surface to the second surface; a third surface opposite the second surface, a fourth surface located opposite the third surface, and a metal layer including a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a planar view; the first layer may include silicon or a silicon compound; the metal layer may include an effective region in which the plurality of second openings are formed, and a peripheral region surrounding the effective region; and the peripheral region may have a section surrounded by a recess recessed from the fourth surface toward the third surface or a defect penetrating the metal layer in a planar view. [Effects of the Invention]

[0008] According to the embodiment of the present disclosure, it is possible to reduce the difference in thickness of the deposition material adhering to the substrate. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a cross-sectional view illustrating an example of an organic device. [Figure 2] FIG. 1 is a diagram showing an example of a vapor deposition apparatus equipped with a mask. [Figure 3] FIG. 2 is a plan view showing an example of a mask when viewed from the incident surface side. [Figure 4] FIG. 2 is a plan view showing an example of a mask when viewed from the exit surface side. [Figure 5A] 4 is an enlarged view of the area surrounded by the two-dot chain line in FIG. 3. FIG. [Figure 5B] FIG. 5B is a view of the part shown in FIG. 5A as seen from the light exit surface side. [Figure 6A] FIG. 4 is a cross-sectional view taken along line VIA-VIA of the mask shown in FIG. [Figure 6B] FIG. 4 is a cross-sectional view taken along line VIB-VIB of the mask shown in FIG. [Figure 7A] 6B is an enlarged view of the area surrounded by the two-dot chain line in FIG. 6A. FIG. [Figure 7B] 6C is an enlarged view of the area surrounded by the two-dot chain line in FIG. 6B. FIG. [Figure 8] 6C is a cross-sectional view showing a step in the method of manufacturing the mask shown in FIGS. 6A and 6B. FIG. [Figure 9] 6C is a cross-sectional view showing a step in the method of manufacturing the mask shown in FIGS. 6A and 6B. FIG. [Figure 10] 6C is a cross-sectional view showing a step in the method of manufacturing the mask shown in FIGS. 6A and 6B. FIG. [Figure 11] 6C is a cross-sectional view showing a step in the method of manufacturing the mask shown in FIGS. 6A and 6B. FIG. [Figure 12] 6C is a cross-sectional view showing a step in the method of manufacturing the mask shown in FIGS. 6A and 6B. FIG. [Figure 13] 6C is a cross-sectional view showing a step in the method of manufacturing the mask shown in FIGS. 6A and 6B. FIG. [Figure 14] 6C is a cross-sectional view showing a step in the method of manufacturing the mask shown in FIGS. 6A and 6B. FIG. [Figure 15] 6C is a cross-sectional view showing a step in the method of manufacturing the mask shown in FIGS. 6A and 6B. FIG. [Figure 16] 6C is a cross-sectional view showing a step in the method of manufacturing the mask shown in FIGS. 6A and 6B. FIG. [Figure 17]6C is a cross-sectional view showing a step in the method of manufacturing the mask shown in FIGS. 6A and 6B. FIG. [Figure 18] 6C is a cross-sectional view showing a step in the method of manufacturing the mask shown in FIGS. 6A and 6B. FIG. [Figure 19] 6C is a cross-sectional view showing a step in the method of manufacturing the mask shown in FIGS. 6A and 6B. FIG. [Figure 20A] FIG. 6B is a plan view corresponding to FIG. 6A and showing a modified example of the mask. [Figure 20B] 20B is an enlarged view of the area surrounded by the two-dot chain line in FIG. 20A. FIG. [Figure 21] 20B is a cross-sectional view showing a step in the method of manufacturing the mask shown in FIG. 20A. [Figure 22A] 20B is a cross-sectional view showing a step in the method of manufacturing the mask shown in FIG. 20A. [Figure 22B] 22B is an enlarged view of the area surrounded by the two-dot chain line in FIG. 22A. FIG. [Figure 23] 20B is a cross-sectional view showing a step in the method of manufacturing the mask shown in FIG. 20A. [Figure 24] FIG. 20B is a cross-sectional view showing a step of a modified method of manufacturing the mask shown in FIG. 20A. [Figure 25] FIG. 20B is a cross-sectional view showing a step of a modified method of manufacturing the mask shown in FIG. 20A. [Figure 26A] FIG. 20B is a cross-sectional view showing a step of a modified method of manufacturing the mask shown in FIG. 20A. [Figure 26B] 26B is an enlarged view of the area surrounded by the two-dot chain line in FIG. 26A. FIG. [Figure 27] FIG. 20B is a cross-sectional view showing a step of a modified method of manufacturing the mask shown in FIG. 20A. [Figure 28] FIG. 7 is a cross-sectional view showing a step of a modified method of manufacturing the mask shown in FIGS. 6A and 6B. [Figure 29] FIG. 7 is a cross-sectional view showing a step of a modified method of manufacturing the mask shown in FIGS. 6A and 6B. [Figure 30] FIG. 7 is a cross-sectional view showing a step of a modified method of manufacturing the mask shown in FIGS. 6A and 6B. [Figure 31]FIG. 7 is a cross-sectional view showing a step of a modified method of manufacturing the mask shown in FIGS. 6A and 6B. [Figure 32] FIG. 7 is a cross-sectional view showing a step of a modified method of manufacturing the mask shown in FIGS. 6A and 6B. [Figure 33] FIG. 5C is a plan view corresponding to FIG. 5B and showing a modified example of the mask. [Figure 34] FIG. 10 is a plan view of a defect or recess and a section surrounded by the defect or recess, showing a modified example of a mask. [Figure 35] FIG. 10 is a plan view of a defect or recess and a section surrounded by the defect or recess, showing a modified example of a mask. [Figure 36] FIG. 10 is a plan view of a defect or recess and a section surrounded by the defect or recess, showing a modified example of a mask. [Figure 37] FIG. 10 is a plan view of a defect or recess and a section surrounded by the defect or recess, showing a modified example of a mask. [Figure 38] FIG. 10 is a plan view of a defect or recess and a section surrounded by the defect or recess, showing a modified example of a mask. [Figure 39A] FIG. 7B is a plan view corresponding to FIG. 7A and showing a modified example of the mask. [Figure 39B] FIG. 7C is a plan view corresponding to FIG. 7B and showing a modified example of the mask. [Figure 40] FIG. 1 is a diagram illustrating an example of an apparatus including an organic device. DETAILED DESCRIPTION OF THE INVENTION

[0010] In this specification and drawings, unless otherwise specified, terms meaning the materials underlying a certain structure, such as "substrate," "sheet," and "film," are not to be distinguished from one another solely on the basis of differences in name.

[0011] In this specification and drawings, unless otherwise specified, terms that specify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," and values ​​of lengths and angles, are not bound by strict meanings, but are interpreted to include a range within which similar functions can be expected.

[0012] In this specification and drawings, unless otherwise specified, when a certain component, such as a certain region, is referred to as "above" or "below," "upper" or "lower," or "upward" or "below" another component, such as another region, this includes cases where the component is in direct contact with the other component. It also includes cases where another component is contained between the component and the other component, i.e., cases where the components are in indirect contact. Furthermore, unless otherwise specified, the terms "above," "upper side," or "upper," or "under," "lower side," or "lower" may be used in the up-down direction.

[0013] In this specification, when multiple upper limit candidates and multiple lower limit candidate values ​​are listed for a certain parameter, the numerical range of the parameter may be constructed by combining any one upper limit candidate with any one lower limit candidate. For example, consider a description that reads, "Parameter B is, for example, A1 or more, or may be A2 or more, or may be A3 or more. Parameter B is, for example, A4 or less, or may be A5 or less, or may be A6 or less." In this case, the numerical range of parameter B may be A1 or more and A4 or less, A1 or more and A5 or less, A1 or more and A6 or less, A2 or more and A4 or less, A2 or more and A5 or less, A2 or more and A6 or less, A3 or more and A4 or less, A3 or more and A5 or less, or A3 or more and A6 or less.

[0014] In this specification and drawings, unless otherwise specified, the state in which the face of element A is "opposed to" the face of element B includes not only the case in which the face of element A is in contact with the face of element B, but also the case in which element C is located between the faces of element A and element B. In other words, the term "opposed to" is a term that indicates the orientation of two faces.

[0015] In this specification and drawings, unless otherwise specified, the same or similar symbols are used to designate the same parts or parts having similar functions, and repeated explanations may be omitted. Furthermore, for the sake of convenience, the dimensional ratios of the drawings may differ from the actual ratios, and some components may be omitted from the drawings.

[0016] In this specification and drawings, unless otherwise specified, one embodiment of this specification may be combined with other examples to the extent that no contradiction occurs. In addition, other examples may also be combined with each other to the extent that no contradiction occurs.

[0017] Unless otherwise specified, in the present specification and drawings, when two or more steps or processes are disclosed in a method such as a manufacturing method, other steps or processes that are not disclosed may be performed between the disclosed steps or processes. In addition, the order of the disclosed steps or processes is arbitrary within the range that does not cause a contradiction.

[0018] In the drawings, in order to clarify the directional relationships between the drawings, some drawings show a common first direction D1 and a common second direction D2 by arrows with common symbols. An arrow pointing from the paper surface along a direction perpendicular to the paper surface of the drawing to the viewer is shown by a symbol of a dot in a circle, as shown in Fig. 6A, for example.

[0019] In one embodiment of the present specification, an example will be described in which a mask is used to form an organic layer or an electrode on a substrate when manufacturing an organic electroluminescence (EL) display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment may be used to form electrodes of a device for displaying or projecting images or videos to express virtual reality (VR) or augmented reality (AR). The mask of this embodiment may also be used to form electrodes of a display device other than an organic electroluminescence (EL) display device, such as an electrode of a liquid crystal display device. The mask of this embodiment may also be used to form electrodes of an organic device other than a display device, such as an electrode of a pressure sensor.

[0020] A first aspect of the present disclosure is a mask, comprising: a first layer including a first surface, a second surface opposite the first surface, and at least one first opening extending from the first surface to the second surface; a metal layer including a third surface facing the second surface, a fourth surface located on the opposite side of the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first openings in a plan view; Including, the first layer comprises silicon or a silicon compound; the metal layer includes an effective area in which the plurality of second openings are formed, and a peripheral area surrounding the effective area; The peripheral region is a mask having a section surrounded by a recess recessed from the fourth surface toward the third surface or a defect penetrating the metal layer in a plan view.

[0021] A second aspect of the present disclosure is the mask according to the first aspect, wherein the recess or the cutout may continuously surround the compartment.

[0022] A third aspect of the present disclosure is a mask according to the first or second aspect described above, wherein the compartment may be discontinuously surrounded by a plurality of recesses or defects that extend along different portions of the contour of the compartment in a plan view.

[0023] A fourth aspect of the present disclosure is a mask according to the third aspect described above, wherein the distance between adjacent ends of the recesses or defects along the contour may be one-tenth or less of the length of the contour.

[0024] A fifth aspect of the present disclosure is a mask according to any one of the first to fourth aspects described above, The compartment may be surrounded by the recess; The thickness of the bottom of the recess may be half or less of the average thickness of the section.

[0025] A sixth aspect of the present disclosure is a mask according to any one of the first to fifth aspects described above, wherein, in a planar view, the peripheral region may have a plurality of sections around one effective region, each section being surrounded by the recess or the defective section.

[0026] A seventh aspect of the present disclosure is a mask according to the sixth aspect, In a plan view, a contour of the first opening may have a portion extending in a first direction and a portion extending in a second direction different from the first direction, The plurality of sections may include, in a plan view, a section adjacent to or overlapping with a portion extending in the first direction and a section adjacent to or overlapping with a portion extending in the second direction.

[0027] An eighth aspect of the present disclosure is the mask according to any one of the first to seventh aspects described above, wherein the compartments may overlap the first layer.

[0028] A ninth aspect of the present disclosure is a mask according to any one of the first to eighth aspects described above, The first layer may include a plurality of first openings; The compartment may overlap an area between adjacent first openings in the first layer.

[0029] A tenth aspect of the present disclosure is a mask according to any one of the first to ninth aspects described above, wherein at least a portion of the compartment may overlap an area between an outer edge of the first layer and the first opening.

[0030] An eleventh aspect of the present disclosure is the mask according to any one of the first to tenth aspects described above, wherein at least a part of the compartment may overlap the first opening.

[0031] A twelfth aspect of the present disclosure is a mask according to any one of the first to eleventh aspects described above, The peripheral region may have a section surrounded by a defect portion penetrating the metal layer in a plan view, The defect may overlap the first layer.

[0032] A thirteenth aspect of the present disclosure is a mask according to any one of the first to twelfth aspects described above, wherein the mask further comprises an intermediate layer positioned between the second surface and the third surface, the intermediate layer including an intermediate opening overlapping the first opening; The peripheral region may have a section surrounded by a defect portion penetrating the metal layer in a plan view, The defect may overlap the intermediate layer.

[0033] A fourteenth aspect of the present disclosure is a mask according to any one of the first to thirteenth aspects described above, wherein a material having a lower conductivity than the metal layer is disposed within the recess or the defect.

[0034] A fifteenth aspect of the present disclosure is a mask according to any one of the first to fourteenth aspects described above, wherein silicon oxide or silicon nitride may be disposed in the recess or the defect.

[0035] A sixteenth aspect of the present disclosure is the mask according to any one of the first to fifteenth aspects described above, wherein the partitions may contain a metal different from the metal forming the effective area.

[0036] A seventeenth aspect of the present disclosure is a mask according to any one of the first to sixteenth aspects described above, wherein the wall surface defining the first opening may include, in a planar view, a tapered surface that approaches or moves away from the center of the first opening as it moves from the first surface to the second surface.

[0037] An eighteenth aspect of the present disclosure is the mask according to the seventeenth aspect, wherein the tapered surface may be directly connected to the second surface.

[0038] A nineteenth aspect of the present disclosure is a mask according to any one of the first to eighteenth aspects described above, The wall surfaces defining the first opening may include a pair of first direction wall surfaces extending in a first direction and facing each other, and a pair of second direction wall surfaces extending in a second direction different from the first direction and facing each other, At least one of the first direction wall surface and the second direction wall surface may include a tapered surface that approaches or moves away from a center of the first opening as it moves from the first surface to the second surface, A dimension of the first direction wall surface measured in a direction perpendicular to the first direction may be different from a dimension of the second direction wall surface measured in a direction perpendicular to the second direction.

[0039] A 20th aspect of the present disclosure is that, in a mask according to the 19th aspect described above, the difference between the dimension of the first direction wall surface measured in a direction perpendicular to the first direction and the dimension of the second direction wall surface measured in a direction perpendicular to the second direction may be 5 μm or more.

[0040] A twenty-first aspect of the present disclosure is a mask according to the nineteenth or twentieth aspect, wherein the tapered surface may be directly connected to the second surface.

[0041] A twenty-second aspect of the present disclosure is a mask according to any one of the first to twenty-first aspects described above, The wall surfaces defining the first opening may include a pair of first direction wall surfaces extending in a first direction and facing each other, and a pair of second direction wall surfaces extending in a second direction different from the first direction and facing each other, The first direction wall surface may include a first direction tapered surface that approaches or moves away from a center of the first opening as it moves from the first surface to the second surface, The second direction wall surface may include a second direction tapered surface that approaches or moves away from the center of the first opening as it moves from the first surface to the second surface, A first direction taper width, which is the dimension of the first direction tapered surface measured in a direction perpendicular to the first direction, and a second direction taper width, which is the dimension of the second direction tapered surface measured in a direction perpendicular to the second direction, may be different.

[0042] A twenty-third aspect of the present disclosure may be such that, in the mask according to the twenty-second aspect described above, the difference between the taper width in the first direction and the taper width in the second direction is 5 μm or more.

[0043] A twenty-fourth aspect of the present disclosure is the mask according to the twenty-second or twenty-third aspect, wherein the first direction tapered surface and the second direction tapered surface may be directly connected to the second surface.

[0044] A 25th aspect of the present disclosure is a method for manufacturing an organic device, comprising a step of forming an organic layer on a substrate by a vapor deposition method using a mask according to any one of the first to 24th aspects described above.

[0045] An embodiment of the present disclosure will be described in detail with reference to the drawings. Note that the embodiment described below is an example of an embodiment of the present disclosure, and the present disclosure should not be interpreted as being limited to only these embodiments.

[0046] An organic device 100 including an organic layer formed by using a mask will be described. The organic device 100 includes an organic layer or an electrode formed by using a mask. Figure 1 is a cross-sectional view showing an example of the organic device 100.

[0047] The organic device 100 includes a substrate 110 and a plurality of elements 115 arranged along an in-plane direction of the substrate 110. The substrate 110 includes a first surface 111 and a second surface 112 located on the opposite side of the first surface 111. The elements 115 are located on the first surface 111. The elements 115 are, for example, pixels. The substrate 110 may include two or more types of elements 115. For example, the substrate 110 may include a first element 115A and a second element 115B. Although not shown, the substrate 110 may also include a third element. The first element 115A, the second element 115B, and the third element are, for example, a red pixel, a blue pixel, and a green pixel.

[0048] The element 115 may include a first electrode 120 , an organic layer 130 disposed on the first electrode 120 , and a second electrode 140 disposed on the organic layer 130 .

[0049] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a planar view. The insulating layer 160 may contain, for example, polyimide. The insulating layer 160 may overlap an edge of the first electrode 120. "Planar view" means viewing an object along the normal direction to the surface of a plate-like member such as the substrate 110.

[0050] The substrate 110 may be an insulating member. Examples of materials that can be used for the substrate 110 include rigid materials that are not flexible, such as silicon, quartz glass, Pyrex (registered trademark) glass, and synthetic quartz plates, as well as flexible materials that are flexible, such as resin films, optical resin plates, and thin glass. The substrate 110 may have a planar shape similar to that of a silicon wafer used in semiconductor manufacturing. In this case, the substrate 110 can be processed using equipment that performs semiconductor manufacturing processes. For example, the first electrode 120, the insulating layer 160, and the like can be formed on the substrate 110 using equipment that performs semiconductor manufacturing processes.

[0051] The element 115 is configured to realize some function by applying a voltage between the first electrode 120 and the second electrode 140, or by causing a current to flow between the first electrode 120 and the second electrode 140. For example, if the element 115 is a pixel of an organic EL display device, the element 115 can emit light that forms an image.

[0052] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a conductive metal oxide, or another conductive inorganic material. The first electrode 120 may include a transparent and conductive metal oxide such as indium tin oxide.

[0053] The organic layer 130 includes an organic material. When a current is applied to the organic layer 130, the organic layer 130 can perform some function. Applying a current means that a voltage is applied to the organic layer 130 or that a current flows through the organic layer 130. The organic layer 130 may be, for example, a light-emitting layer that emits light when a current is applied, or a layer whose light transmittance or refractive index changes when a current is applied. The organic layer 130 may include an organic semiconductor material.

[0054] 1, the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown, the organic layer 130 may include a third organic layer included in a third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0055] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located therebetween is driven. If the organic layer 130 is an emitting layer, light is emitted from the organic layer 130 and extracted to the outside from the second electrode 140 side or the first electrode 120 side.

[0056] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like.

[0057] The second electrode 140 may include a conductive material such as a metal. Examples of materials that can be used for the second electrode 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, carbon, and alloys thereof. As shown in FIG. 1, the second electrode 140 may extend across two adjacent organic layers 130 in a plan view.

[0058] Next, a method for forming the organic layer 130 on the substrate 110 by vapor deposition will be described. Fig. 2 is a diagram showing a vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process for depositing a vapor deposition material on a target object.

[0059] As shown in FIG. 2, the vapor deposition apparatus 10 may include therein a vapor deposition source 6, a heater 8, and a mask 20. The vapor deposition apparatus 10 may further include an exhaust means for creating a vacuum atmosphere inside the vapor deposition apparatus 10. The vapor deposition source 6 is, for example, a crucible. The vapor deposition source 6 contains a vapor deposition material 7 such as an organic material or a metal material. The heater 8 heats the vapor deposition source 6 to evaporate the vapor deposition material 7 under a vacuum atmosphere.

[0060] The mask 20 includes an incident surface 201, an exit surface 202, and a second opening 41. The incident surface 201 faces the deposition source 6. The exit surface 202 is located on the opposite side of the incident surface 201. The exit surface 202 faces the first surface 111 of the substrate 110. A portion of the deposition material 7 that enters the mask 20 from the exit surface 202 passes through the second opening 41 and exits from the exit surface 202. The deposition material 7 that exits from the exit surface 202 is deposited on the first surface 111 of the substrate 110. The exit surface 202 of the mask 20 may be in contact with the first surface 111 of the substrate 110.

[0061] As shown in FIG. 2 , the deposition apparatus 10 may include a magnet 5 disposed on the second surface 112 side of the substrate 110. When the mask 20 includes a magnetic material, the magnet 5 can attract the mask 20 toward the substrate 110 by magnetic force. This can reduce or eliminate the gap between the mask 20 and the substrate 110. This can suppress the occurrence of a shadow during the deposition process. In this application, the shadow refers to a phenomenon in which the thickness of the organic layer 130 formed near the wall surface of the second opening 41 is smaller than the thickness of the organic layer 130 formed at the center of the second opening 41. The shadow occurs when the deposition material 7 adheres to the wall surface of the mask 20 or when the deposition material 7 enters the gap between the mask 20 and the substrate 110.

[0062] Next, the mask 20 will be described in detail. FIG. 3 is a plan view showing an example of the mask 20 when viewed from the incident surface 201 side. FIG. 4 is a plan view showing an example of the mask 20 when viewed from the exit surface 202 side. FIG. 5A is an enlarged view of the portion surrounded by the two-dot chain line in FIG. 3. FIG. 5B is an enlarged view of the portion surrounded by the two-dot chain line in FIG. 3, viewed from the exit surface 202 side. FIG. 6A is a cross-sectional view of the mask 20 taken along line VIA-VIA in FIG. 3. FIG. 6B is a cross-sectional view of the mask 20 taken along line VIB-VIB in FIG. 3. FIG. 7A is an enlarged view of the portion surrounded by the two-dot chain line in FIG. 6A. FIG. 7B is an enlarged view of the portion surrounded by the two-dot chain line in FIG. 6B.

[0063] As shown in FIGS. 3 and 4 , the mask 20 includes a mask body 21. The mask body 21 includes a first layer 30 and a metal layer 40. The mask body 21 may also include an intermediate layer 50. The first layer 30, the intermediate layer 50, and the metal layer 40 may be arranged in this order from the incident surface 201 toward the exit surface 202. The mask 20 may further include a low-conductivity layer 60. In other words, the mask 20 may include the mask body 21 and the low-conductivity layer 60. Each layer will be described below.

[0064] The first layer 30 includes a first surface 301, a second surface 302, a first opening 31, and a first wall surface 32. The first surface 301 may constitute the incident surface 201. The second surface 302 is located on the opposite side of the first surface 301. The first wall surface 32 is located between the first surface 301 and the second surface 302.

[0065] The first opening 31 penetrates the first layer 30 from the first surface 301 to the second surface 302. As shown in FIG. 3 , the first layer 30 may include a plurality of first openings 31. The plurality of first openings 31 may be aligned in a first direction D1 and a second direction D2. The second direction D2 may be perpendicular to the first direction D1. The first direction D1 and the second direction D2 are directions parallel to the first surface 301.

[0066] One first opening 31 may correspond to one screen of the organic EL display device. A mask 20 including multiple first openings 31 can simultaneously form organic layer patterns corresponding to multiple screens on the substrate 110. As shown in FIG. 3 , the first opening 31 may have a rectangular outline in a plan view. The first opening 31 is defined by a first wall surface 32. In other words, the first wall surface 32 faces the first opening 31.

[0067] The first wall surface 32 extends generally along the normal direction of the first surface 301. As shown in FIG. 5A, the first wall surface 32 has a pair of first direction wall surfaces 321 and a pair of second direction wall surfaces 322. The first direction wall surfaces 321 extend in a first direction D1 in a plan view. The second direction wall surfaces 322 extend in a second direction D2 in a plan view. The first wall surfaces 32 will be described in detail later.

[0068] 3, the region of the first layer 30 where no first openings 31 are formed may be divided into an outer region 35 and an inner region 36. The inner region 36 is a region located between two adjacent first openings 31 in a planar view. The outer region 35 is a region located between an outer edge 303 of the first layer 30 and the first openings 31 in a planar view. As shown in FIG. 3, the inner region 36 may extend in a first direction D1 and a second direction D2.

[0069] 3 and 4, the first layer 30 may include alignment marks 39. The alignment marks 39 are formed, for example, on the second surface 302. The alignment marks 39 may also be formed on the first surface 301. The alignment marks 39 are used, for example, to adjust the relative position of the substrate 110 with respect to the mask 20. If the substrate 110 has a property of transmitting visible light, the alignment marks 39 can be seen through the substrate 110.

[0070] 3 and 4, the alignment mark 39 may have a circular outline in a plan view. Although not shown, the alignment mark 39 may have an outline other than a circle, such as a rectangle or a cross. The alignment mark 39 may be located in the outer region 35 or the inner region 36.

[0071] The shape of the alignment mark 39 in the cross section is arbitrary. For example, the alignment mark 39 may include a recess located in the first surface 301 or the second surface 302. The alignment mark 39 may include a hole penetrating the first layer 30 from the first surface 301 to the second surface 302. The recess and hole may be formed by etching the first surface 301 or the second surface 302. The recess and hole may be formed by irradiating the first surface 301 or the second surface 302 with a laser. For example, the alignment mark 39 may include a layer located on the first surface 301 or the second surface 302. The layer is formed of a different material than the first layer 30. The alignment mark 39 may be formed in a layer other than the first layer 30.

[0072] The first layer 30 includes silicon or a silicon compound. The silicon compound is, for example, silicon carbide (SiC). The first layer 30 is produced, for example, by processing a silicon wafer. As shown in FIG. 3, the outer edge 303 of the first layer 30 may include a linear portion. The linear portion is also called an orientation flat. Although not shown, a notch may be formed in the outer edge 303. The notch is also called a notch. The orientation flat and the notch represent the crystal orientation of the silicon wafer. The silicon compound may be glass, such as quartz glass.

[0073] The maximum dimension S1 of the first layer 30 in plan view is, for example, 100 mm or more, or may be 150 mm or more, or 200 mm or more. The dimension S1 is, for example, 500 mm or less, or may be 400 mm or less, or may be 300 mm or less.

[0074] The dimension S2 of the first openings 31 in the direction in which the first openings 31 are arranged is, for example, 5 mm or more, or may be 10 mm or more, or may be 20 mm or more. The dimension S2 is, for example, 100 mm or less, or may be 50 mm or less, or may be 30 mm or less.

[0075] The distance S3 between two first openings 31 in the direction in which the first openings 31 are arranged is, for example, 0.1 mm or more, or may be 0.5 mm or more, or 1.0 mm or more. The distance S3 is, for example, 20 mm or less, or may be 15 mm or less, or may be 10 mm or less.

[0076] The thickness of the first layer 30 is defined as the maximum thickness T1 of the outer region 35. Thickness T1 is, for example, 50 μm or more, or may be 100 μm or more, or may be 200 μm or more. Thickness T1 is, for example, 1000 μm or less, or may be 800 μm or less, or may be 600 μm or less.

[0077] Next, the metal layer 40 will be described. The metal layer 40 includes a third surface 401, a fourth surface 402, a plurality of second openings 41, a second wall surface 42, a cutout 43, and a third wall surface 44. The metal layer 40 may include a plurality of cutouts 43. The third surface 401 faces the second surface 302 of the first layer 30. The fourth surface 402 is located on the opposite side of the third surface 401. The second openings 41 and the cutouts 43 penetrate the metal layer 40 from the third surface 401 to the fourth surface 402. The second wall surface 42 and the third wall surface 44 are located between the third surface 401 and the fourth surface 402. The second wall surface 42 faces the second opening 41. The third wall surface 44 faces the cutout 43.

[0078] The metal layer 40 may be divided into a peripheral region 48 and an effective region 49 (see Figures 5A and 5B). The effective region 49 overlaps with the first opening 31. In the illustrated example, the effective region 49 overlaps with an intermediate opening 54 of the intermediate layer 50, which will be described later. The peripheral region 48 is a region that surrounds the effective region 49. At least a portion of the peripheral region 48 overlaps with the first layer 30 in a planar view. A portion of the peripheral region 48 may overlap with the first opening 31. In the illustrated example, the peripheral region 48 overlaps with the intermediate layer 50 in a planar view.

[0079] The second openings 41 are formed in the effective area 49. One second opening 41 corresponds to one deposition layer. One deposition layer is, for example, one organic layer 130. A group of the regularly arranged second openings 41 corresponds to one screen of the organic EL display device. As shown in FIG. 3, a group of the regularly arranged second openings 41 may overlap one first opening 31 in a plan view. Furthermore, as shown in FIG. 5A, a group of the regularly arranged second openings 41 may overlap one intermediate opening 54 in a plan view.

[0080] As shown in FIGS. 7A and 7B , the second wall surface 42 may include a tapered surface 42a that widens away from the center of the second opening 41 as it moves from the fourth surface 402 toward the third surface 401. Including the tapered surface 42a in the second wall surface 42 can prevent a shadow from being generated near the second wall surface 42. In the illustrated example, the three-dimensional shape of the second opening 41 is a truncated pyramid overall. The second wall surface 42 corresponds to the side surface of the truncated pyramid. Of course, the three-dimensional shape of the second opening 41 may also be a truncated cone. Furthermore, the second wall surface 42 does not have to include the tapered surface 42a. In this case, the three-dimensional shape of the second opening 41 may be a prismatic or cylindrical shape.

[0081] 7A and 7B, the symbol S4 represents the width of the tapered surface 42a in the direction in which the second openings 41 are arranged. The width S4 is, for example, 0.2 μm or more, or may be 0.5 μm or more, or 1.0 μm or more. The width S4 is, for example, 25 μm or less, or may be 20 μm or less, or may be 10 μm or less.

[0082] 7A and 7B, the symbol θ1 represents the angle formed between the second wall surface 42 and the third surface 401. The angle θ1 is, for example, 50° or more, and may be 55° or more, 60° or more, or 65° or more. The angle θ1 is, for example, less than 90°, and may be 85° or less, or may be 80° or less.

[0083] The dimension S5 of the second opening 41 in a plan view is, for example, 1.0 μm or more, or alternatively, 2.0 μm or more, or 3.0 μm or more. The dimension S5 is, for example, 25 μm or less, or alternatively, 10 μm or less, or alternatively, 5.0 μm or less.

[0084] The pitch of the second openings 41 refers to the distance P1 between the centers of two adjacent second openings 41 in the direction in which the two second openings 41 are arranged. The pitch P1 of the second openings 41 is, for example, 1.0 μm or more, or may be 2.0 μm or more, or 3.0 μm or more. The pitch P1 is, for example, 25 μm or less, or may be 10 μm or less, or 5.0 μm or less.

[0085] The distance S6 between two second openings 41 in the direction in which the second openings 41 are arranged is, for example, 1.0 μm or more, or may be 2.0 μm or more, or 3.0 μm or more. The distance S6 is, for example, 25.0 μm or less, or may be 10.0 μm or less, or may be 5.0 μm or less.

[0086] A distance S7 between the first wall surface 32 and the second opening 41 in a plan view may be larger than the distance S6. This makes it possible to prevent a shadow from being generated at the second opening 41 close to the first wall surface 32.

[0087] The defect 43 is formed in the peripheral region 48. The defect 43 surrounds a portion of the peripheral region 48. In other words, the peripheral region 48 has a section 48A surrounded by the defect 43. The defect 43, the section 48A surrounded by the defect 43, and the low-conductivity layer 60 disposed in the defect 43 will be described in detail later.

[0088] The metal layer 40 includes a metal. The metal may be a magnetic material or a non-magnetic material. Examples of magnetic materials include nickel, iron, cobalt, and alloys thereof. Examples of non-magnetic materials include copper, aluminum, titanium, chromium, and alloys thereof. The metal layer 40 may include a semiconductor. For example, the metal layer 40 may include polycrystalline silicon. The metal layer 40 may be composed of a single layer or multiple layers. Furthermore, the effective area 49 and the section 48A of the metal layer 40 may be formed of different materials.

[0089] The thickness of the metal layer 40 is defined as the maximum thickness T2 of the peripheral region 48. The thickness T2 of the metal layer 40 is smaller than the thickness T1 of the first layer 30. The thickness T2 is, for example, 25.0 μm or less, and may be 10.0 μm or less, or 5.0 μm or less. This makes it possible to suppress the occurrence of shadows. The thickness T2 is, for example, 0.5 μm or more, and may be 1.0 μm or more, or 2.0 μm or more. This makes it possible to suppress the occurrence of defects such as pinholes, deformation, etc. in the metal layer 40.

[0090] The metal layer 40 may include an alignment mark. The alignment mark of the metal layer 40 may be formed separately from the alignment mark 39 of the first layer 30, or may be formed instead of the alignment mark 39 of the first layer 30.

[0091] Next, the intermediate layer 50 will be described. In the example shown in FIGS. 6A and 6B , the intermediate layer 50 is located between the first layer 30 and the metal layer 40. The intermediate layer 50 includes a fifth surface 501, a sixth surface 502, an intermediate opening 54, and a fourth wall surface 55. The fifth surface 501 faces the second surface 302 of the first layer 30. The sixth surface 502 is located on the opposite side of the fifth surface 501 and faces the third surface 401 of the metal layer 40. The intermediate opening 54 penetrates the intermediate layer 50 from the fifth surface 501 to the sixth surface 502. The fourth wall surface 55 is located between the fifth surface 501 and the sixth surface 502. The fourth wall surface 55 faces the intermediate opening 54.

[0092] The intermediate layer 50 is positioned so as not to overlap the second opening 41 in a plan view. This makes it possible to suppress the occurrence of a shadow caused by the intermediate layer 50. The intermediate layer 50 may be positioned so as to overlap the cutout portion 43. The intermediate layer 50 may close the end of the cutout portion 43 on the third surface 401 side.

[0093] 3, the intermediate layer 50 may include a plurality of intermediate openings 54. The plurality of intermediate openings 54 may be aligned in the first direction D1 and the second direction D2. As shown in FIG. 3, the intermediate openings 54 may have a rectangular outline in a plan view.

[0094] 5A, one intermediate opening 54 may overlap one first opening 31. Also, one intermediate opening 54 may overlap a group of a plurality of regularly arranged second openings 41. In other words, the intermediate opening 54 may overlap the active region 49. The intermediate layer 50 may overlap the peripheral region 48.

[0095] As described above, the fourth wall surface 55 faces the intermediate opening 54. In the example shown in FIGS. 7A and 7B , the fourth wall surface 55 may extend along the normal direction of the fifth surface 501. In a plan view, the fourth wall surface 55 may be located within the first opening 31. In other words, the intermediate opening 54 may overlap a portion of the first opening 31. The fourth wall surface 55 may define the boundary between the effective area 49 and the peripheral area 48.

[0096] A distance S8 between the fourth wall surface 55 and the second opening 41 in a plan view may be larger than the distance S6. The larger the distance S8, the more easily the deposition material moving from the fourth wall surface 55 toward the second opening 41 close to the fourth wall surface 55 passes through the second opening 41. When the distance S8 is larger than the distance S6, it is possible to suppress the occurrence of a shadow in the second opening 41 close to the fourth wall surface 55.

[0097] The intermediate layer 50 includes a layer that performs some function for the first layer 30 or the metal layer 40. For example, the intermediate layer 50 includes a stopper layer 51. The stopper layer 51 is located between the first layer 30 and the metal layer 40. The stopper layer 51 may be in contact with the second surface 302 of the first layer 30. The stopper layer 51 may form a fifth surface 501 of the intermediate layer 50.

[0098] The stopper layer 51 may have a function of stopping etching in the step of processing the first layer 30 by etching. Specifically, the stopper layer 51 is resistant to an etchant that etches the first layer 30. The stopper layer 51 may contain, for example, a metal material, an inorganic compound, an organic compound, etc. Examples of the metal material include aluminum, an aluminum alloy, titanium, or a titanium alloy. Examples of the aluminum alloy include aluminum and neodymium. Examples of the inorganic compound include silicon oxide, etc. Examples of the organic compound include resin. The organic compound may be photosensitive. For example, the stopper layer 51 may include a photoresist. The organic compound does not have to be photosensitive.

[0099] The thickness of the stopper layer 51 is not particularly limited as long as it can prevent the metal layer 40 from being etched in the process of processing the first layer 30. For example, the thickness of the stopper layer 51 may be smaller than the thickness T2 of the metal layer 40 or may be equal to or greater than the thickness T2 of the metal layer 40. The thickness of the stopper layer 51 may be, for example, 5 nm or greater, 50 nm or greater, or 75 nm or greater. The thickness of the stopper layer 51 may be, for example, 100 μm or less, 50 μm or less, 10.0 μm or less, 5.0 μm or less, 1.0 μm or less, or 150 nm or less. The higher the resistance of the stopper layer 51 to the etchant for the first layer 30, the smaller the thickness of the stopper layer 51 can be. It is particularly preferable that the thickness of the stopper layer 51 be 1.0 μm or less.

[0100] The intermediate layer 50 may include a seed layer 52. The seed layer 52 may be located between the stopper layer 51 and the metal layer 40. The seed layer 52 may be in contact with the third surface 401 of the metal layer 40. The seed layer 52 may form a sixth surface 502 of the intermediate layer 50.

[0101] The seed layer 52 carries charge to the plating solution when the metal layer 40 is formed by electrolytic plating. Specifically, the seed layer 52 may contain a conductive material such as a metal material or a conductive oxide. More specifically, the seed layer 52 may contain gold, copper, nickel, titanium, aluminum, iron, chromium, tantalum, tungsten, indium tin oxide (ITO), or an alloy thereof. For example, the seed layer 52 may contain an iron alloy containing nickel. An example of an iron alloy containing nickel is permalloy. Permalloy is an iron alloy containing 35% to 80% by weight of nickel.

[0102] The seed layer 52 may be formed by, for example, electroless plating, sputtering, vacuum deposition, or ion plating. The seed layer 52 includes a seventh surface 521 facing the second surface 302 of the first layer 30, and an eighth surface 522 located on the opposite side of the seventh surface 521. In the illustrated example, the eighth surface 522 forms the sixth surface 502 of the intermediate layer 50.

[0103] The thickness of the seed layer 52 is not particularly limited as long as it allows the metal layer 40 to be formed. For example, the thickness of the seed layer 52 may be smaller than the thickness T2 of the metal layer 40 or may be equal to or greater than the thickness T2 of the metal layer 40. The thickness of the seed layer 52 is, for example, 2.0 nm or more, 10.0 nm or more, or 30.0 nm or more. The thickness of the seed layer 52 is, for example, 5.0 μm or less, 1.0 μm or less, or 150 nm or less.

[0104] The intermediate layer 50 may include an adhesion layer 53 between the stopper layer 51 and the seed layer 52 to improve adhesion between the stopper layer 51 and the seed layer 52. The adhesion layer 53 may include titanium, chromium, titanium oxide, chromium nitride, or zinc oxide. Such an adhesion layer 53 may be formed by, for example, a sol-gel method, a sputtering method, or a vacuum deposition method. The thickness of the adhesion layer 53 is not particularly limited, but may be, for example, 5 nm or more, 6 nm or more, or 8 nm or more. The thickness of the adhesion layer 53 may be, for example, 70 nm or less, 60 nm or less, or 50 nm or less.

[0105] The intermediate layer 50 may include an alignment mark. The alignment mark of the intermediate layer 50 may be formed separately from the alignment mark of the first layer 30 or the metal layer 40, or may be formed instead of the alignment mark of the first layer 30 or the metal layer 40.

[0106] The thickness of each layer, the dimensions of each component, the spacing, etc. can be measured by observing an image of the cross section of the mask 20 using a scanning electron microscope.

[0107] It is desirable to uniformize the thickness of the deposition material 7 attached to the substrate 110. For example, it is desirable to minimize the difference in thickness among the organic layers 130 formed on the substrate 110 within a region corresponding to one screen of an organic EL display device. Uniform thickness among the organic layers 130 can uniformize the display quality within the screen. For example, it can uniformize the amount of light emitted within the screen. However, according to the findings of the present inventors, the thickness of the deposition layer near the outer edge of the region tends to be greater than the thickness of the deposition layer in the center of the region. As a result, the amount of light emitted differs between the center and the outer edge of the screen. Furthermore, it has been found that moire is likely to occur near the outer edge of the screen in this case. This is believed to be due to the following reason. Generally, misalignment between the first electrode 120 and the deposition layer is likely to occur near the outer edge of the region. This is because, when performing vapor deposition on the substrate 110 using the mask 20, the substrate 110 and the mask 20 are generally aligned so as to minimize the misalignment between the first electrode 120 at the center of the region on the substrate 110 and the second opening 41 at the center of the effective region 49 of the mask 20. If a thicker vapor-deposited layer is formed in an area where the misalignment between the first electrode 120 and the vapor-deposited layer is large, the misalignment between the first electrode 120 and the vapor-deposited layer becomes more noticeable, and moire patterns are more likely to occur. Therefore, it is necessary to minimize the difference in thickness of the vapor-deposited layer within the region in order to suppress differences in the amount of light emitted within the screen and to suppress the occurrence of moire patterns.

[0108] The mask 20 of this embodiment is designed to reduce the difference in thickness of the deposition layer within the region. Specifically, the metal layer 40 has sections 48A surrounded by cutouts 43 around the effective region 49. According to the findings of the present inventors, the metal layer 40 having sections 48A surrounded by cutouts 43 around the effective region 49 can reduce the difference in thickness of the deposition material that passes through the second openings 41 in the effective region 49 and adheres to the substrate 110. More specifically, this can prevent the thickness of the deposition material that passes through the second openings 41 located near the outer edge of the effective region 49 and adheres to the substrate 110 from being greater than the thickness of the deposition material that passes through the second openings 41 located near the center of the effective region 49 and adheres to the substrate 110. In other words, this can prevent the amount of deposition material that passes through the second openings 41 located near the outer edge of the effective region 49 from being greater than the amount of deposition material that passes through the second openings 41 located near the center of the effective region 49. This is believed to be due to the following reasons.

[0109] First, the reason why the thickness of the deposition layer near the outer edge of the effective region is greater than the thickness of the deposition layer in the center of the effective region is believed to be as follows. The deposition material 7 flying from the deposition source 6 onto the mask 20 enters the first opening 31 from the first surface 301 side of the first layer 30. At this time, the deposition material 7 flying into the inner region 36 or the outer region 35 goes around the corresponding region 36, 35 and enters the first opening 31. Therefore, the density of the deposition material 7 near the first wall surface 32 in the first opening 31 is higher than the density of the deposition material 7 in the center of the effective region 49. Therefore, the amount of the deposition material 7 passing through the second opening 41 located near the outer edge of the effective region 49 is greater than the amount of the deposition material 7 passing through the second opening 41 located near the center of the effective region 49. As a result, the thickness of the deposition layer near the outer edge of the effective region is greater than the thickness of the deposition layer in the center of the effective region.

[0110] Next, the presence of the section 48A surrounded by the missing portion 43 near the outer edge of the effective region 49 in the metal layer 40 can suppress the amount of the deposition material 7 passing through the second opening 41 located near the outer edge of the effective region 49 for the following reason. That is, the deposition material 7 has the planarity of a π-conjugated system. Therefore, the flow of the deposition material 7 corresponds to an electric current. The flow of the deposition material 7 near the metal layer 40 generates a magnetic field near the metal layer 40, and eddy currents are generated in the section 48A of the metal layer 40 to suppress the increase of this magnetic field. The generation of eddy currents in the section 48A of the metal layer 40 causes a loss of energy in the deposition material 7 flowing near the section 48A in the first opening 31, and the flow of the deposition material 7 near the section 48A slows down. That is, the flow of the deposition material 7 toward the outer edge of the effective region 49 in the first opening 31 slows down. As a result, the amount of the deposition material 7 passing through the second opening 41 located near the outer edge of the effective region 49 can be suppressed.

[0111] In the illustrated example, the recess 43 overlaps the intermediate layer 50 in a plan view. In this case, the end of the recess 43 on the third surface 401 side may be closed by the intermediate layer 50. By closing the recess 43, when a deposition layer is formed on the substrate 110 using the mask 20, the deposition material from the deposition source 6 is prevented from passing through the recess 43 and adhering to the substrate 110.

[0112] The end of the recess 43 on the third surface 401 side may be closed by the first layer 30. In this case as well, when a deposition layer is formed on the substrate 110 using the mask 20, the deposition material 7 from the deposition source 6 is prevented from passing through the recess 43 and adhering to the substrate 110.

[0113] In the illustrated example, at least a portion of the defect 43 overlaps with the first layer 30 in a planar view. In particular, in the illustrated example, the entire defect 43 overlaps with the first layer 30. As can be seen from FIG. 5B , the defect 43 may overlap with the inner region 36 of the first layer 30 in a planar view. As can be seen from FIG. 4 , the defect 43 may overlap with the outer region 35 of the first layer 30 in a planar view.

[0114] The dimensions of the sections 48A in a plan view are not particularly limited. For example, the dimensions of the sections 48A may be determined so that the maximum length S9 thereof is equal to or greater than a predetermined value and equal to or less than a predetermined value. This allows eddy currents to be generated effectively in each section 48A. As a result, the amount of deposition material 7 passing through the second openings 41 located near the outer edge of the effective area 49 can be effectively suppressed. The maximum length S9 is, for example, 100 mm or less, or may be 50 mm or less, or may be 30 mm or less. The maximum length S9 is, for example, 0.1 mm or more, or may be 0.5 mm or more, or may be 1.0 mm or more.

[0115] 4, the peripheral region 48 has a plurality of sections 48A. Each section 48A may be adjacent to one of the effective regions 49. In a plan view, a plurality of sections 48A may be adjacent to each effective region 49. The plurality of sections 48A may be aligned along the outer edge of the effective region 49. This effectively suppresses the amount of vapor deposition material passing through the second opening 41 in a long region along the outer edge of the effective region 49.

[0116] 4, in a plan view, the outline of the first opening 31 has a portion extending in the first direction D1 and a portion extending in the second direction D2. The multiple sections 48A adjacent to each effective area 49 include a section 48A1 adjacent to the portion extending in the first direction D1 and a section 48A2 adjacent to the portion extending in the second direction D2.

[0117] In the illustrated example, each effective area 49 is surrounded by a plurality of sections 48A. The sections 48A are arranged circumferentially along the outer edge of the effective area 49. This effectively reduces the amount of vapor deposition material 7 passing through the second openings 41 in all areas along the outer edge of the effective area 49. In the example shown in FIG. 5B, four sections 48A are adjacent to each effective area 49, but this is not limited thereto. One or two sections 48A may be adjacent to each effective area 49, or five or more sections 48A may be adjacent to each effective area 49.

[0118] 5B, the cutout 43 continuously surrounds the corresponding section 48A. In other words, the cutout 43 continuously extends along the outline of the corresponding section 48A.

[0119] Each section 48A is surrounded by a missing portion 43. Therefore, within the metal layer 40, each section 48A is independent from the effective area 49. In other words, each section 48A is not directly connected to the effective area 49. Furthermore, within the metal layer 40, the multiple sections 48A are independent from one another. In other words, each section 48A is not directly connected to the other sections 48A. This allows eddy currents to be generated effectively in each section 48A.

[0120] 5B , each of the sections 48A overlaps the first layer 30 and / or the intermediate layer 50. In the illustrated example, each of the sections 48A is located outside the first opening 31 in a plan view. In the illustrated example, some of the sections 48A overlap with a region (inner region 36) between adjacent first openings 31 of the first layer 30. Other parts of the sections 48A overlap with a region (outer region 35) between the outer edge 303 of the first layer 30 and the first opening 31. Of course, at least some of the sections 48A may overlap with the first opening 31. In this case, at least some of the sections 48A may be disposed across the first layer 30 and the first opening 31 in a plan view. In this case, the multiple sections 48A adjacent to each effective area 49 may include, in a planar view, a section 48A that overlaps with a portion of the first wall surface 32 extending in the first direction D1, and a section 48A that overlaps with a portion of the first wall surface 32 extending in the second direction D2.

[0121] Next, the low-conductivity layer 60 will be described. The low-conductivity layer 60 is provided to prevent a conductive material from being unintentionally disposed in the recesses 43. The low-conductivity layer 60 is disposed in at least some of the recesses 43. The low-conductivity layer 60 may be disposed in all of the recesses 43. The low-conductivity layer 60 may be exposed on the side of the exit surface 202 of the mask 20.

[0122] The low-conductivity layer 60 preferably contains a material that is less conductive than the metal layer 40. In other words, the low-conductivity layer 60 preferably contains a material that is more insulating than the metal layer 40. This prevents a conductive foreign object from being unintentionally placed in the recess 43, which would otherwise cause the electrical resistance between adjacent regions across the recess 43 to become too low. This allows eddy currents to be effectively generated in each section 48A. The low-conductivity layer 60 may contain, for example, silicon oxide, silicon nitride, or silicon oxynitride. Silicon nitride has the chemical formula Si x N y Silicon oxynitride can be represented by the chemical formula Si x O y N z The heat dissipation promotion layer 60 may be formed by, for example, low pressure chemical vapor deposition or plasma enhanced chemical vapor deposition using silane SiH4 and / or nitrogen oxide N2O and / or ammonia NH3 and / or nitrogen N2 as raw materials.

[0123] The thickness of the low-conductivity layer 60 is preferably equal to or less than the thickness T2 of the metal layer 40. This can prevent the low-conductivity layer 60 from forming a gap between the fourth surface 402 of the metal layer 40 and the substrate 110. This can prevent shadows from occurring during the vapor deposition process. The thickness of the low-conductivity layer 60 is, for example, 25.0 μm or less, or may be 10.0 μm or less, or may be 5.0 μm or less. The thickness of the low-conductivity layer 60 is, for example, 0.5 μm or more, or may be 1.0 μm or more, or may be 2.0 μm or more.

[0124] Next, further measures for reducing the difference in thickness of the deposited layer within the above-mentioned region will be described. Specifically, the configuration of the first layer 30 of the mask 20 of this embodiment will be described.

[0125] The first wall surface 32 has a tapered surface 32a. In the illustrated example, the tapered surface 32a is directly connected to the second surface 302. The tapered surface 32a approaches the center of the first opening 31 as it moves from the first surface 301 to the second surface 302. The first wall surface 32 includes the tapered surface 32a, which increases the area of ​​the first wall surface 32. Here, the deposition material 7 decelerated by the eddy current in the first opening 31 easily adheres to the first wall surface 32. The increased area of ​​the first wall surface 32 can increase the amount of deposition material 7 adhering to the first wall surface 32. This can more effectively suppress the amount of deposition material 7 passing through the second opening 41 located near the outer edge of the effective area 49.

[0126] 7A and 7B, the first-direction wall surface 321 has a first-direction tapered surface 321a. The second-direction wall surface 322 has a second-direction tapered surface 322a. Both the first-direction tapered surface 321a and the second-direction tapered surface 322a approach the center of the first opening 31 as they move from the first surface 301 to the second surface 302. The first-direction tapered width S10 of the first-direction tapered surface 321a and the second-direction tapered width S11 of the second-direction tapered surface 322a are different from each other. The first-direction tapered width S10 is the dimension of the first-direction tapered surface 321a measured in a direction perpendicular to the first direction D1. In the illustrated example, the first-direction tapered width S10 is the dimension of the first-direction tapered surface 321a measured in the second direction D2. The second direction taper width S11 is the dimension of the second direction tapered surface 322a measured in a direction perpendicular to the second direction D2. In the illustrated example, the second direction taper width S11 is the dimension of the second direction tapered surface 322a measured in the first direction D1.

[0127] Because the first-direction taper width S10 and the second-direction taper width S11 are different, the amount of deposition material 7 adhering to the first-direction wall surface 321 per unit length along the first direction D1 differs from the amount of deposition material 7 adhering to the second-direction wall surface 322 per unit length along the second direction D2. As a result, the density of the deposition material 7 decreases near the wall surface 321 or 322 to which a large amount of deposition material 7 per unit length is adhered. Then, the deposition material 7 near the wall surface 322 or 321 to which a small amount of deposition material 7 per unit length is adhered flows toward the wall surface 321 or 322 to which a large amount of deposition material 7 per unit length is adhered. As a result, a flow of the deposition material 7 occurs along the circumferential direction of the first wall surface 32, and the risk of the deposition material 7 stagnation near a portion of the first wall surface 32 is suppressed. This suppresses variation in the amount of deposition material 7 passing through the second opening 41 located near the outer edge of the effective area 49.

[0128] (Method of manufacturing a deposition mask) Next, a method for manufacturing the mask 20 according to this embodiment will be described with reference to FIGS. 8 to 19. First, a first layer 30 is prepared. A silicon wafer may be used as the first layer 30. The first surface 301 and the second surface 302 of the first layer 30 may be polished to a mirror finish. The arithmetic mean roughness Ra of the first surface 301 and the second surface 302 may be 1.5 nm or less, or 1.0 nm or less. The surface orientation of the first surface 301 and the second surface 302 may be (100), (110), or the like.

[0129] 8, the second surface 302 of the first layer 30 includes a first region 305 and a second region 306. The first region 305 is a region corresponding to the first opening 31 described above. The second region 306 is a region corresponding to the outer region 35 and inner region 36 described above. The second region 306 surrounds the first region 305.

[0130] Next, an intermediate layer forming step is performed in which the intermediate layer 50 is formed on the second surface 302 of the first layer 30. As a result, a laminate 59 including the first layer 30 and the intermediate layer 50 is produced, as shown in FIG. 9. Specifically, a stopper layer 51, an adhesion layer 53, and a seed layer 52 are laminated in this order on the second surface 302. The stopper layer 51 may be formed by a vacuum film formation method such as sputtering. The adhesion layer 53 may be formed by a sol-gel method, sputtering, or vacuum deposition. The seed layer 52 may be formed by an electroless plating method, sputtering, vacuum deposition, or ion plating.

[0131] 9 , the sixth surface 502 of the seed layer 52 includes a third region 525 and a fourth region 526. The third region 525 is a region corresponding to the effective region 49 of the metal layer 40 described above. The fourth region 526 is a region corresponding to the peripheral region 48 of the metal layer 40 described above. The fourth region 526 surrounds the third region 525. The dimensions of the third region 525 and the fourth region 526 may be the same as the dimensions of the effective region 49 and the peripheral region 48, respectively.

[0132] The intermediate layer 50 is formed to cover at least the first region 305. The intermediate layer 50 may also cover the second region 306. For example, the intermediate layer 50 may be formed over the entire second surface 302.

[0133] 10 , a resist pattern formation process is performed to form a plurality of first resist protrusions 70 and a plurality of second resist protrusions 75 on the sixth surface 502 of the seed layer 52. As a result, a plurality of resist protrusions 70, 75 protruding from the sixth surface 502 are formed in the third region 525 and the fourth region 526. The plurality of first resist protrusions 70 are formed on the third region 525 in correspondence with the second openings 41. Furthermore, the plurality of second resist protrusions 75 are formed on the fourth region 526 in correspondence with the missing portions 43.

[0134] The resist protrusions 70 and 75 are, for example, photoresists. The photoresists are positive resists. Examples of positive resists include iP5700, PMER-P-LA900PM, and PMER-P7100 manufactured by Tokyo Ohka Kogyo Co., Ltd., and NPR9700 manufactured by Nagase ChemteX.

[0135] The height T3 of the resist protrusions 70, 75 is defined as the distance between the top of the resist protrusion 70 and the sixth surface 502. The height T3 is greater than the thickness T2 of the metal layer 40. The height T3 is, for example, 1.0 μm or more, and may be 2.0 μm or more, or 4.0 μm or more. The height T3 is, for example, 30.0 μm or less, and may be 20.0 μm or less, or 10.0 μm or less.

[0136] The first resist protrusion 70 has a three-dimensional shape corresponding to the three-dimensional shape of the second opening 41. The side surface 71 of the first resist protrusion 70 has a shape corresponding to the second wall surface 42 of the second opening 41. In the illustrated example, the second opening 41 is generally frustum-shaped. Correspondingly, the first resist protrusion 70 may also be generally frustum-shaped. Note that if the second opening 41 is generally frustum-shaped, the first resist protrusion 70 may also be generally frustum-shaped. Furthermore, if the second opening 41 is generally prismatic or cylindrical, the first resist protrusion 70 may also be generally prismatic or cylindrical.

[0137] The second resist protrusions 75 have a three-dimensional shape corresponding to the three-dimensional shape of the recess 43. The side surfaces 76 of the second resist protrusions 75 have a shape corresponding to the third wall surfaces 44 of the recess 43. In the illustrated example, the recess 43 has a lattice shape as a whole. Correspondingly, the second resist protrusions 75 may also have a lattice shape as a whole.

[0138] The resist pattern forming step includes, for example, a first resist layer forming step, an exposure step, and a development step.

[0139] The first resist layer forming step is a step of forming a first resist layer on sixth surface 502. The first resist layer forming step includes, for example, a step of applying a liquid resist to sixth surface 502. The first resist layer forming step may include a step of heating the liquid resist on sixth surface 502. The first resist layer is formed by drying the liquid resist.

[0140] In the exposure step, the first resist layer is irradiated with light so that in a subsequent development step, the first resist layer remains in the portions of the third region 525 and the fourth region 526 corresponding to the second opening 41 and the missing portion 43, and the first resist layer is removed from other portions on the sixth surface 502. Specifically, because the first resist layer is a positive resist, light is irradiated onto the first resist layer in the above-mentioned other portions on the sixth surface 502. The light is, for example, i-rays. The i-rays are spectral lines of mercury having a wavelength of 365 nm.

[0141] In the exposure process, parameters such as the exposure dose and the focus position may be adjusted. The exposure dose is, for example, 150 mJ / cm 2 or more, 175 mJ / cm 2 It may be 200 mJ / cm or more. 2 The exposure dose may be, for example, 300 mJ / cm 2 or more. 2 less than 350 mJ / cm 2 may be less than 400 mJ / cm 2or less. The focal position may be the eighth surface 522 of the seed layer 52, or may be shifted from the eighth surface 522. For example, the focal position may be a position shifted by SH μm from the eighth surface 522 toward the seventh surface 521. The shift amount SH is, for example, 1 μm or more, 2 μm or more, or 3 μm or more. The shift amount SH is, for example, 6 μm or less, 8 μm or less, or 10 μm or less. By adjusting these parameters, the dimensions and three-dimensional shape of the resist protrusions 70 and 75 can be controlled. By controlling the dimensions and three-dimensional shape of the resist protrusions 70 and 75, the dimensions and three-dimensional shape of the second opening 41 and the missing portion 43 can be controlled. In particular, the angle θ1 of the tapered surface 42 a of the second opening 41 can be controlled.

[0142] After the exposure step, the first resist layer is developed to obtain a plurality of resist convex portions 70, 75 in the third region 525 and the fourth region 526. The developer contains, for example, TMAH (tetramethylammonium hydroxide).

[0143] Subsequently, a metal layer forming step is performed to form a metal layer 40 on the sixth surface 502. The metal layer forming step may include a plating step. That is, the metal layer 40 may be formed by a plating step. The plating step may be an electrolytic plating step or an electroless plating step. When an electrolytic plating step is performed, the intermediate layer 50 includes a seed layer 52.

[0144] In the plating process, a plating solution containing ions of the metal that will form the metal layer 40 is supplied onto the sixth surface 502. As a result, the metal layer 40 is formed on the sixth surface 502, as shown in FIG. 11 . When forming the metal layer 40 by electrolytic plating, a plating power source is connected to the seed layer 52, and the laminate 59 is immersed in a plating bath containing a plating solution. As a result, metal is deposited in the gaps between the resist protrusions 70, 75 on the sixth surface 502, and the metal layer 40 is formed.

[0145] Second openings 41 and cutouts 43 are formed in the metal layer 40 in correspondence with the plurality of resist protrusions 70, 75. The shapes and dimensions of the second openings 41 and cutouts 43 correspond to the shapes and dimensions of the side surfaces 71, 76 of the corresponding resist protrusions 70, 75.

[0146] The thickness T2 of the metal layer 40 can be controlled by the current value from the plating power source, the time for which electricity is applied to the plating power source, the time for which the metal layer 40 is immersed in the plating solution, and the like.

[0147] The metal layer formation step may include an annealing step in which the metal layer 40 is heated. This reduces strain that has occurred inside the metal layer 40. In the annealing step, the first layer 30, the intermediate layer 50, and the metal layer 40 are maintained in an environment that is higher than room temperature. The temperature in the annealing step is, for example, 120°C or higher, or may be 140°C or higher, or may be 150°C or higher. The temperature in the annealing step is, for example, 250°C or lower, or may be 220°C or lower, or may be 200°C or lower.

[0148] Subsequently, a first resist protrusion removal process is performed to remove the first resist protrusions 70, and a second resist protrusion removal process is performed to remove the second resist protrusions 75. As shown in FIG. 12, the first resist protrusion removal process removes the first resist protrusions 70 from the second openings 41 of the metal layer 40. Also, as shown in FIG. 12, the second resist protrusion removal process removes the second resist protrusions 75 from the missing portions 43 of the metal layer 40. In the first resist protrusion removal process and the second resist protrusion removal process, the resist protrusions 70, 75 may be removed by, for example, exposing and developing the resist protrusions 70, 75. The developer may contain, for example, TMAH (tetramethylammonium hydroxide). Alternatively, the resist protrusions 70, 75 may be removed by bringing a resist treatment liquid into contact with the resist protrusions 70, 75. The resist treatment liquid may contain, for example, N-methyl-2-pyrrolidone. The first resist protrusion removal process and the second resist protrusion removal process may be performed simultaneously.

[0149] Next, a low-conductivity layer forming step is performed to form a low-conductivity layer 60 on the intermediate layer 50 and the metal layer 40. As a result, the low-conductivity layer 60 is disposed in the second opening 41 and the recessed portion 43, as shown in FIG. 13 . The low-conductivity layer 60 may be formed so as to cover the fourth surface 402 of the metal layer 40. In this case, the low-conductivity layer 60 can be used as a protective layer that protects the metal layer 40 from an etchant that etches the first layer 30.

[0150] The low-conductivity layer 60 may be formed by chemical vapor deposition. The low-conductivity layer 60 may be formed by low-pressure chemical vapor deposition (Low-pressure CVD) or plasma-enhanced chemical vapor deposition (Plasma-Enhanced CVD). For example, silicon oxide (SiO x The low-conductivity layer 60 containing silicon nitride Si may be formed by low-pressure chemical vapor deposition or plasma-enhanced chemical vapor deposition using tetraethyl orthosilicate Si(OC2H5)4 (also called "TEOS (tetraethoxysilane)") as a raw material, or by plasma-enhanced chemical vapor deposition using silane SiH4 and nitrogen oxide N2O as raw materials. x N y The low conductive layer 60 containing may be formed by low pressure chemical vapor deposition or plasma chemical vapor deposition using silane SiH4 and / or nitrogen oxide N2O and / or ammonia NH3 as raw materials, for example.

[0151] Next, a first layer processing step is performed to form a first opening 31 in the first layer 30. In the first layer processing step, as shown in Fig. 14, a second resist layer 80 may be formed partially on the first surface 301 of the first layer 30. A resist opening 81 facing the first opening 31 is formed in the second resist layer 80. The resist opening 81 overlaps with the first region 305 in a plan view.

[0152] The second resist layer 80 may be, for example, a photoresist. In this case, first, a liquid resist material is coated on the first surface 301 to form the second resist layer 80 on the first surface 301. After coating, a step of heating the second resist layer 80 may be performed. Subsequently, a photolithography process is performed to expose and develop the second resist layer 80. This allows resist openings 81 to be formed in the second resist layer 80.

[0153] Although not shown, the second resist layer 80 may be a silicon oxide film partially formed on the first surface 301. The silicon oxide film is formed, for example, by partially performing a thermal oxidation treatment on the first surface 301. The silicon oxide film may be formed on the first layer 30 before the intermediate layer 50, the metal layer 40, and the low-conductivity layer 60 are stacked on the first layer 30.

[0154] Subsequently, in the first layer processing step, as shown in FIG. 15, the first layer 30 is etched from the first surface 301 side to form a first opening 31 in the first layer 30. The etching may be dry etching using an etching gas. Because the stopper layer 51 is resistant to the etchant, as shown in FIG. 15, the etching can be prevented from progressing to the metal layer 40. The etching gas is, for example, SF6 gas.

[0155] The first layer processing step may be controlled to obtain a desired first direction taper width S10 and a desired second direction taper width S11. For example, etching gas conditions may be controlled. The etching gas conditions include the type, temperature, and pressure of the etching gas.

[0156] The first opening 31 in the first layer 30 may be formed by a method other than dry etching. For example, methods such as wet etching and polishing may be used. A combination of multiple methods may also be used. By using one or more appropriate methods and controlling the conditions of the methods used, the desired first direction taper width S10 and the desired second direction taper width S11 can be obtained.

[0157] Next, a low-conductivity layer thickness reduction step is carried out to remove the low-conductivity layer 60 on the fourth surface 402 of the metal layer 40. As a result, the thickness of the low-conductivity layer 60 can be reduced to equal to or less than the thickness T2 of the metal layer 40, as shown in Fig. 16. Methods that can be used to remove the low-conductivity layer 60 on the fourth surface 402 include mechanical polishing, chemical mechanical polishing, wet etching, dry etching, and combinations thereof.

[0158] Subsequently, a low-conductivity layer removing step is performed to remove the low-conductivity layer 60 in the second opening 41. In the low-conductivity layer removing step, as shown in FIG. 17 , a first protective layer 83 may be formed partially on the fourth surface 402 of the metal layer 40 and on the low-conductivity layer 60. An opening 84 is formed in the first protective layer 83. The opening 84 corresponds to the effective area 49. The opening 84 overlaps with the third area 525 in a plan view.

[0159] The first protective layer 83 is resistant to the etching solution used to remove the low-conductivity layer 60. For example, when the etching solution contains buffered hydrofluoric acid, the first protective layer 83 contains a resin resistant to hydrofluoric acid. For example, the first protective layer 83 contains a photoresist resistant to hydrofluoric acid. The photoresist may contain polyimide or the like. The buffered hydrofluoric acid solution is a solution containing hydrofluoric acid and ammonium fluoride.

[0160] Subsequently, in the low-conductivity layer removing step, an etching solution such as a buffered hydrofluoric acid solution is supplied toward the opening 84. As a result, the low-conductivity layer 60 overlapping with the opening 84 in plan view is removed, as shown in FIG. 18 . Therefore, the low-conductivity layer 60 is removed from the second opening 41.

[0161] Next, an intermediate layer removal step is performed to remove the third region 525 of the intermediate layer 50. In the intermediate layer removal step, a second protective layer 85 may be formed partially on the fifth surface 501 of the intermediate layer 50, as shown in Fig. 18 . An opening 86 is formed in the second protective layer 85. The opening 86 corresponds to the effective region 49. The opening 86 overlaps the third region 525 in a plan view.

[0162] Subsequently, in the intermediate layer removal step, an etchant for the intermediate layer 50 is supplied to the opening 86. As a result, the intermediate layer 50 that overlaps with the opening 86 in plan view is removed, as shown in Fig. 19. The removal of the intermediate layer 50 may be performed by dry etching using a fluorine-based gas or the like, or by wet etching using an acidic etching solution.

[0163] By forming the first opening 31 in the first layer 30 and further removing the third region 525 of the intermediate layer 50, the end of the second opening 41 formed in the effective region 49 on the third surface 401 side is opened. On the other hand, the end of the defect 43 formed in the peripheral region 48 on the third surface 401 side remains closed by the intermediate layer 50 and / or the first layer 30.

[0164] 19 , after the intermediate layer removing step, a second resist layer removing step of removing the second resist layer 80, a first protective layer removing step of removing the first protective layer 83, and a second protective layer removing step of removing the second protective layer 85 are performed. The order of the second resist layer removing step, the first protective layer removing step, and the second protective layer removing step is not particularly limited. Two or three of the second resist layer removing step, the first protective layer removing step, and the second protective layer removing step may be performed simultaneously. The second resist layer removing step and the first protective layer removing step may be performed before the intermediate layer removing step.

[0165] When the second resist layer 80 is a photoresist, a second resist processing solution containing N-methyl-2-pyrrolidone may be supplied toward the second resist layer 80. The second resist layer 80 may be removed by irradiating the second resist layer 80 with oxygen plasma. When the second resist layer 80 is a silicon oxide film, a resist processing solution containing hydrofluoric acid may be supplied toward the second resist layer 80. The second resist layer 80 may be removed by dry etching using CF4 gas or the like.

[0166] Next, an example of a method for manufacturing the organic device 100 using the mask 20 will be described.

[0167] First, a substrate 110 on which a first electrode 120 is formed is prepared. The substrate 110 may be a silicon wafer. The first electrode 120 may be formed, for example, by forming a conductive layer constituting the first electrode 120 on the substrate 110 by a vacuum film deposition method or the like, and then patterning the conductive layer by a photolithography method or the like. The conductive layer may be patterned using an apparatus for carrying out a semiconductor manufacturing process. An insulating layer 160 located between two adjacent first electrodes 120 may be formed on the substrate 110.

[0168] Next, the organic layer 130 including the first organic layer 130A, the second organic layer 130B, etc. is formed on the first electrode 120. For example, first, the first organic layer 130A is formed by a vapor deposition method using a first mask 20. The first mask 20 has a second opening 41 corresponding to the first organic layer 130A. Next, the second organic layer 130B is formed by a vapor deposition method using a second mask 20. The second mask 20 has a second opening 41 corresponding to the second organic layer 130B. Next, a third organic layer is formed by a vapor deposition method using a third mask 20. The third mask 20 has a second opening 41 corresponding to the third organic layer.

[0169] Next, the second electrode 140 is formed on the organic layer 130. For example, as shown in FIG. 1, the second electrode 140 may be formed over the entire first surface 111 by a vacuum film formation method or the like. Alternatively, although not shown, the second electrode 140 may be formed by a vapor deposition method using a mask 20, similar to the organic layer 130. Thereafter, a sealing layer or the like (not shown) may be formed on the second electrode 140. In this manner, the organic device 100 can be obtained.

[0170] A plurality of organic devices 100 may be formed on one substrate 110. One organic device 100 may correspond to one first opening 31 of the mask 20. In this case, a step of cutting the substrate 110 may be performed. For example, the substrate 110 is cut along the region of the substrate 110 that corresponds to the inner region 36 of the mask 20. In this way, a plurality of organic devices 100 can be obtained.

[0171] The effect of the mask 20 when forming the organic layer 130, the second electrode 140, etc. by vapor deposition using the mask 20 will be described.

[0172] The metal layer 40 has the sections 48A surrounded by the missing portions 43 around the effective area 49, which reduces the difference between the amount of the deposition material 7 passing through the second openings 41 located near the center of the effective area 49 and the amount of the deposition material 7 passing through the second openings 41 located near the outer edge of the effective area 49. As a result, the difference in thickness of the deposition material 7 passing through the multiple second openings 41 in the effective area 49 and adhering to the substrate 110 can be reduced.

[0173] Furthermore, by arranging the low-conductivity layer 60 within the defect 43, the risk of a foreign object being placed within the defect 43 and unintentionally lowering the electrical resistance value between the section 48A surrounded by the defect 43 and other areas of the metal layer 40 is reduced.

[0174] Furthermore, since the first wall surface 32 defining the first opening 31 has the tapered surface 32a, the area of ​​the first wall surface 32 can be increased, and the amount of the deposition material 7 adhering to the first wall surface 32 can be increased. This makes it possible to reduce the difference between the amount of the deposition material 7 passing through the second opening 41 located near the center of the effective area 49 and the amount of the deposition material 7 passing through the second opening 41 located near the outer edge of the effective area 49.

[0175] Furthermore, because the taper width S10 of the first-direction wall surface 321 is different from the taper width S11 of the second-direction wall surface 322, a flow of the deposition material 7 occurs along the circumferential direction of the first wall surface 32, and the deposition material 7 is prevented from gathering near a part of the first wall surface 32. This makes it possible to suppress variation in the amount of deposition material 7 passing through the second openings 41 located near the outer edge of the effective area 49.

[0176] The above-described embodiment can be modified in various ways. Modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, parts that can be configured similarly to the above-described embodiment will be designated by the same reference numerals as those used for corresponding parts in the above-described embodiment. Duplicate descriptions will be omitted. Furthermore, if it is clear that the effects obtained in the above-described embodiment can also be obtained in the modified examples, the description of those effects may be omitted.

[0177] (First Modification) In the above example, each section 48A of the peripheral region 48 of the metal layer 40 is surrounded by a missing portion 43, but this is not limited thereto. As shown in FIG. 20A , each section 48A of the peripheral region 48 may be surrounded by a recess 45 recessed from the fourth surface 402 toward the third surface 401. The metal layer 40 may remain between a bottom surface 451 of the recess 45 and the third surface 401. In other words, the section 48A of the peripheral region 48 of the metal layer 40 may be directly connected to the adjacent effective region 49 or section 48A. In this case, if the thickness of the portion 40a between the bottom surface 451 of the recess 45 and the third surface 401 is sufficiently small, the electrical resistance between adjacent regions sandwiching the recess 45 can be sufficiently high, and eddy currents can be effectively generated in each section 48A. The thickness of portion 40a is, for example, half or less, or may be one-third or less, or one-fourth or less, of the thickness of section 48A surrounded by recess 45. The thickness of portion 40a is, for example, 10 μm or less, or may be 5.0 μm or less, or may be 1.0 μm or less.

[0178] Portion 40a of metal layer 40 may be formed by, for example, plating. In this case, as shown in Fig. 20B, metal layer 40 may include a first metal layer 411 and a second metal layer 412. First metal layer 411 and second metal layer 412 may include the same metal material or different metal materials.

[0179] A method for forming a metal layer 40 having a recess 45 formed in a peripheral region 48 will be described with reference to FIGS.

[0180] After the resist pattern formation step shown in FIG. 10 , a first metal layer formation step is performed to form a first metal layer 411 on the sixth surface 502 of the intermediate layer 50. The first metal layer formation step may include a plating step. That is, the first metal layer 411 may be formed by a plating step. The thickness T4 of the first metal layer 411 may be smaller than the thickness T2 of the metal layer 40. The thickness T4 is, for example, 0.3 μm or more, 0.7 μm or more, or 1.5 μm or more. The thickness T4 is, for example, 15 μm or less, 7 μm or less, or 3 μm or less. In the first metal layer 411, openings 41 a corresponding to the first resist protrusions 70 and openings 45 a corresponding to the second resist protrusions 75 are formed.

[0181] Subsequently, a second resist convex portion removing step is performed to remove the second resist convex portions 75 formed in the fourth region 526. As a result, the second resist convex portions 75 are removed from the openings 45a, as shown in FIG.

[0182] Subsequently, a second metal layer forming step is performed to form a second metal layer 412 on the first metal layer 411 and on the intermediate layer 50 in the opening 45a. The second metal layer forming step may include a plating step. That is, the second metal layer 412 may be formed by a plating step.

[0183] The first metal layer 411 and the second metal layer 412 form the metal layer 40. The second metal layer forming step may be performed in the same manner as the first metal layer forming step. The plating solution used to form the second metal layer 412 may be the same as or different from the plating solution used to form the first metal layer 411.

[0184] 22A and 22B, in the second metal layer formation step, first resist convex portions 70 are arranged in the third region 525. As a result, a plurality of openings 41b corresponding to the plurality of first resist convex portions 70 are formed in the region of the second metal layer 412 facing the third region 525. The openings 41a in the first metal layer 411 and the openings 41b in the second metal layer 412 form second openings 41 in the metal layer 40.

[0185] In the second metal layer forming step, the second resist convex portion 75 is not arranged in the fourth region 526. As a result, in the region of the second metal layer 412 facing the fourth region 526, the second metal layer 412 is also formed in the opening 45a of the first metal layer 411. As a result, the second metal layer 412 (i.e., the above-mentioned portion 40a) is formed on the intermediate layer 50 in the opening 45a, and the end of the opening 45a on the third surface 401 side is closed by the second metal layer 412, thereby forming the recess 45. The bottom surface 451 of the recess 45 is formed by the second metal layer 412.

[0186] As shown in FIG. 22B , the second metal layer 412 may cover the first metal layer 411 in the third region 525. The thickness T5 of the second metal layer 412 may be smaller than the thickness T4 of the first metal layer. Furthermore, the thickness T5 is determined so that the sum of the thickness T5 and the thickness T4 of the first metal layer (i.e., the thickness T2 of the metal layer) is smaller than the height T3 of the resist convex portions 70 and 75. As described above, the thickness T5 is, for example, 0.2 μm or more, 0.3 μm or more, or 0.5 μm or more. The thickness T5 is, for example, 10 μm or less, 3.0 μm or less, or 2.0 μm or less. Having the thickness T5 of 0.3 μm or more can prevent defects such as pinholes and deformation from occurring in the metal layer 40. Having the thickness T5 of 10 μm or less can prevent the thickness T5 of the second metal layer 412 in the third region 525 from becoming non-uniform. As a result, the thickness T2 of the metal layer 40 in the effective region 49 can be prevented from becoming non-uniform, and the dimensions of the second opening 41 can be prevented from becoming non-uniform.

[0187] The second metal layer 412 may also be formed on the wall surface of the opening 45a. In this case, the dimension S10 of the recess 45 in a plan view may be smaller than the dimension of the opening 45a of the first metal layer 411.

[0188] Subsequently, a first resist convex portion removal step is performed to remove the first resist convex portions 70 formed in the third region 525. As a result, the first resist convex portions 70 are removed from the second openings 41, as shown in FIG.

[0189] In this manner, the metal layer 40 is formed, which has an effective region 49 in which the second opening 41 is formed and a peripheral region 48 in which the recess 45 is formed.

[0190] (Second Modification) The method for forming the metal layer 40 having the recesses 45 formed in the peripheral region 48 is not limited to the method shown in Figures 21 to 23. Other methods for forming the metal layer 40 having the recesses 45 formed in the peripheral region 48 will be described with reference to Figures 24 to 27.

[0191] After the intermediate layer forming step shown in FIG. 9, a first resist pattern forming step is carried out to form first resist convex portions 70 on the third region 525 of the intermediate layer 50.

[0192] 24, a third metal layer forming step is performed to form a third metal layer 413 on the sixth surface 502 of the intermediate layer 50. The third metal layer forming step may include a plating step. That is, the third metal layer may be formed by a plating step. The thickness of the third metal layer 413 may be smaller than the thickness T2 of the metal layer 40. The thickness range of the third metal layer 413 may be the same as the thickness range of the second metal layer 412 described above. Openings 41c corresponding to the first resist convex portions 70 are formed in the third metal layer 413.

[0193] Subsequently, as shown in FIG. 25, a second resist pattern forming step is carried out to form second resist convex portions 75 on regions overlapping with the fourth regions 526 of the third metal layer 413.

[0194] Next, as shown in FIG. 26A, a fourth metal layer forming process is performed to form a fourth metal layer 414 on the third metal layer 413. The fourth metal layer forming process may include a plating process. That is, the fourth metal layer may be formed by a plating process. The thickness range of the fourth metal layer 414 may be the same as the thickness range of the first metal layer 411 described above. As shown in FIG. 26B, openings 41d corresponding to the first resist convex portions 70 and openings 45b corresponding to the second resist convex portions 75 are formed in the fourth metal layer 414.

[0195] The third metal layer 413 and the fourth metal layer 414 form the metal layer 40. The plating process for forming the fourth metal layer 414 may be performed in the same manner as the plating process for forming the third metal layer 413. The plating solution used for forming the fourth metal layer 414 may be the same as or different from the plating solution used for forming the third metal layer 413.

[0196] As shown in FIG. 26B, opening 41c of third metal layer 413 and opening 41d of fourth metal layer 414 form second opening 41 of metal layer 40. The end of opening 45b corresponding to second resist convex portion 75 is closed by third metal layer 413. In this example, third metal layer 413 forms portion 40a described above. Therefore, third metal layer 413 forms bottom surface 451 of recess 45. The bottom surface 451 and the wall surface of opening 45b define recess 45.

[0197] Subsequently, a first resist convex portion removing step is performed to remove the first resist convex portions 70 formed in the third region 525, and a second resist convex portion removing step is performed to remove the second resist convex portions 75 formed on the third metal layer 413. As a result, the first resist convex portions 70 are removed from the second openings 41, and the second resist convex portions 75 are removed from the recesses 45, as shown in FIG.

[0198] In this manner, the metal layer 40 is formed, which has an effective region 49 in which the second opening 41 is formed and a peripheral region 48 in which the recess 45 is formed.

[0199] (Third Modification) In the above-described example, the low-conductivity layer 60 is formed after the metal layer 40 is formed, but this is not limiting. A method of forming the low-conductivity layer 60 before forming the metal layer 40 will be described with reference to Figs. 28 to 32.

[0200] 9, a low-conductivity layer forming step is performed to form a low-conductivity layer 60 on the intermediate layer 50. As shown in FIG. 28, the low-conductivity layer 60 may be formed to cover the third region 525 and the fourth region 526 of the intermediate layer 50. For example, the low-conductivity layer 60 may be formed over the entire sixth surface 502. As described above, the low-conductivity layer 60 may be formed by chemical vapor deposition. The thickness of the low-conductivity layer 60 may be equal to or greater than the thickness T2 of the metal layer 40.

[0201] Next, a low-conductivity layer processing step is performed to form a plurality of first convex portions 61 and a plurality of second convex portions 65 in the low-conductivity layer 60. As a result, as shown in FIG. 29 , a plurality of convex portions 61, 65 protruding from the sixth surface 502 are formed in the third region 525 and the fourth region 526. The plurality of first convex portions 61 are formed on the third region 525 in correspondence with the second openings 41. The plurality of second convex portions 65 are formed on the fourth region 526 in correspondence with the missing portions 43. The three-dimensional shape of the first convex portions 61 may be the same as the three-dimensional shape of the first resist convex portions 70 described above. The three-dimensional shape of the second convex portions 65 may be the same as the three-dimensional shape of the second resist convex portions 75 described above. The height of the convex portions 61, 65 may be equal to or greater than the thickness T2 of the metal layer 40.

[0202] The method for processing the low-conductivity layer 60 to form the protrusions 61, 65 is not particularly limited. For example, the low-conductivity layer 60 may be processed by dry etching using an etching gas. The dry etching may be reactive ion etching.

[0203] Next, a metal layer forming step is performed to form a metal layer 40 on the intermediate layer 50. The metal layer forming step may include a plating step. That is, the metal layer 40 may be formed by a plating step. As shown in FIG. 30 , a second opening 41 corresponding to the first protrusion 61 and a missing portion 43 corresponding to the second protrusion 65 are formed in the metal layer 40.

[0204] Subsequently, a first convex portion removing step is performed to remove the first convex portion 61. In the first convex portion removing step, a first protective layer 83 may be formed to cover the second convex portion 65, as shown in FIG.

[0205] Subsequently, in the first convex portion removal step, an etching solution such as a buffered hydrofluoric acid solution is supplied toward the opening 84 of the first protective layer 83. This removes the first convex portion 61 that overlaps with the opening 84 in plan view. In other words, the low-conductivity layer 60 is removed from the second opening 41. Furthermore, the second convex portion 65 remains on the intermediate layer 50. In other words, the low-conductivity layer 60 in the defect portion 43 remains on the intermediate layer 50.

[0206] After the first protrusions 61 are removed, a step of removing the first protective layer 83 may be performed. Furthermore, before forming the first protective layer 83 or after removing the first protective layer 83, a low-conductivity layer thickness reduction step of reducing the thickness of the low-conductivity layer 60 to be equal to or less than the thickness T2 of the metal layer 40 may be performed.

[0207] In this manner, the low-conductivity layer 60 can be disposed in the recess 43 .

[0208] (Fourth Modification) For example, after forming the metal layer 40, a metal layer planarization step may be performed to planarize the fourth surface 402 of the metal layer 40. Planarizing the fourth surface 402 of the metal layer 40 can prevent gaps from being formed between the metal layer 40 and components on the substrate 110. This also contributes to suppressing shadows. Methods that can be used to planarize the fourth surface 402 of the metal layer 40 include mechanical polishing, chemical mechanical polishing, wet etching, dry etching, and combinations thereof. The metal layer planarization step may be performed simultaneously with the low-conductivity layer thickness reduction step.

[0209] (Fifth Modification) For example, in the above example, the metal layer 40 is formed by a plating process, but this is not limiting. The metal layer 40 may also be formed by a physical film formation method or a printing method. Physical film formation methods include sputtering, vapor deposition, and ion plating. Physical film formation and printing methods can improve the flatness of the fourth surface 402 of the metal layer 40 compared to plating. This reduces the load of the metal layer planarization process. For example, the time required for the metal layer planarization process can be reduced.

[0210] (Sixth Modification) For example, the intermediate layer 50 may not have the stopper layer 51 and the adhesion layer 53. In this case, the seed layer 52 may be in contact with the second surface 302 of the first layer 30.

[0211] (Seventh Modification) For example, in the above example, the mask 20 includes the intermediate layer 50, but is not limited to this. The mask 20 does not have to include the intermediate layer 50. In this case, the metal layer 40 may be in contact with the second surface 302 of the first layer 30. Also, in this case, one end of the defect portion 43 of the metal layer 40 may be closed by the first layer 30.

[0212] (Eighth Modification) For example, in the example described above, the fourth wall surface 55 of the intermediate layer 50 defines the boundary between the effective region 49 and the peripheral region 48, but this is not limited to this. The first wall surface 32 of the first layer 30 may define the boundary between the effective region 49 and the peripheral region 48. In this case, the fourth wall surface 55 of the intermediate layer 50 and the first wall surface 32 of the first layer 30 may overlap in a plan view. Alternatively, in this case, the mask 20 may not include the intermediate layer 50.

[0213] (Ninth Variation) For example, in the above example, the cutouts 43 or recesses 45 continuously surround each section 48A, but this is not limited thereto. As shown in FIG. 33 , the metal layer 40 may have cutouts 43 or recesses 45 that discontinuously surround each section 48A. In other words, each section 48A may be surrounded by a plurality of cutouts 43 or recesses 45. In this case, the plurality of cutouts 43 or recesses 45 may extend along different portions of the contour of each section 48A. In this case, if the distance S12 between adjacent ends of the cutouts 43 or recesses 45 adjacent along the contour is sufficiently small, the electrical resistance between adjacent regions across the contour can be sufficiently increased, and eddy currents can be effectively generated in each section 48A. The distance S12 between the adjacent ends of adjacent cutouts 43 or recesses 45 is, for example, 1 / 10 or less, or may be 1 / 20 or less, or 1 / 30 or less of the length of the outline of the section 48A surrounded by the cutouts 43 or recesses 45. The distance S12 is, for example, 500 μm or less, or may be 50 μm or less, or may be 5 μm or less.

[0214] (Tenth Modification) For example, in the above example, the planar shape of the section 48A surrounded by the cutout 43 or the recess 45 is a rectangle, but is not limited thereto. As shown in FIGS. 34 to 38 , the planar shape of the section 48A surrounded by the cutout 43 or the recess 45 may be any shape. For example, the planar shape of the section 48A may be a polygon other than a rectangle, such as a triangle or a hexagon, or may be a shape other than a polygon, such as a circle. Furthermore, as shown in FIGS. 34 to 38 , the planar shape of the cutout 43 or the recess 45 may also be any shape. For example, the planar shape of the cutout 43 or the recess 45 may be a curved shape such as a circle or a wavy line, or a broken line shape such as the outline of a polygon or a zigzag line.

[0215] (Eleventh Modification) For example, in the above example, the mask 20 includes the low-conductivity layer 60, but is not limited to this. The mask 20 does not have to include the low-conductivity layer 60. In other words, the low-conductivity layer 60 does not have to be disposed in the missing portion 43 or the recessed portion 45 of the metal layer 40.

[0216] (12th Modification) For example, in the above-described example, the tapered surface 32a of the first wall surface 32 approaches the center of the first opening 31 as it moves from the first surface 301 to the second surface 302. However, this is not limited to this. As shown in FIGS. 39A and 39B , the tapered surface 32a of the first wall surface 32 may move away from the center of the first opening 31 as it moves from the first surface 301 to the second surface 302. In this case, the area of ​​the first wall surface 32 can be increased, and the amount of the deposition material 7 adhering to the first wall surface 32 can be increased. Furthermore, in this case, the deposition material 7 that has flown near the outer edge of the effective area 49 can be retained between the tapered surface 32a of the first wall surface 32 and the metal layer 40. This can more effectively suppress the amount of the deposition material 7 that passes through the second opening 41 located near the outer edge of the effective area 49.

[0217] (13th Modification) For example, in the above example, both the first direction wall surface 321 and the second direction wall surface 322 have tapered surfaces 321a, 322a, but this is not limited to this. Only one of the first direction wall surface 321 and the second direction wall surface 322 may have a tapered surface.

[0218] (14th Modification) FIG. 40 is a diagram showing an example of an apparatus 200 including an organic device 100. The apparatus 200 includes a substrate 110 and an organic layer 130. The organic layer 130 is a layer formed by a vapor deposition method using a mask 20. The apparatus 200 is, for example, a smartphone. The apparatus 200 may also be a tablet terminal, a wearable terminal, or the like. The wearable terminal may be smart glasses, a head-mounted display, or the like.

[0219] It is also possible to combine the multiple components disclosed in the above-described embodiments and modifications as needed, or to delete some of the components disclosed in the above-described embodiments and modifications.

Claims

1. a first layer including a first surface, a second surface opposite the first surface, and at least one first opening extending from the first surface to the second surface; a metal layer including a third surface facing the second surface, a fourth surface located on the opposite side of the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first openings in a plan view; Including, the first layer comprises silicon or a silicon compound; the metal layer includes an effective area in which the plurality of second openings are formed, and a peripheral area surrounding the effective area; The mask, wherein the peripheral region has a section surrounded by a recess recessed from the fourth surface toward the third surface in a plan view or a defect portion penetrating the metal layer.

2. The mask of claim 1 , wherein the recess or the defect continuously surrounds the compartment.

3. The mask according to claim 1 , wherein the compartment is discontinuously surrounded by a plurality of the recesses or the cutouts that extend along different portions of the contour of the compartment in a plan view.

4. The mask according to claim 3 , wherein the distance between adjacent ends of the recesses or cutouts along the contour is equal to or less than one-tenth the length of the contour.

5. The compartment is surrounded by the recess, The mask of claim 1 , wherein the thickness of the bottom of the recess is equal to or less than half the average thickness of the section.

6. The mask according to claim 1 , wherein, in a plan view, the peripheral region has a plurality of sections around one effective region, each section being surrounded by the recess or the defect.

7. In a plan view, the outline of the first opening has a portion extending in a first direction and a portion extending in a second direction different from the first direction, The mask according to claim 6 , wherein the plurality of compartments include a compartment adjacent to or overlapping a portion extending in the first direction and a compartment adjacent to or overlapping a portion extending in the second direction in a plan view.

8. The mask of claim 1 , wherein the compartments overlie the first layer.

9. the first layer includes a plurality of first openings; The mask of claim 1 , wherein the partition overlaps an area between adjacent first openings in the first layer.

10. The mask of claim 1 , wherein at least a portion of the compartment overlaps an area between an outer edge of the first layer and the first opening.

11. The mask of claim 1 , wherein at least a portion of the compartment overlaps the first opening.

12. the peripheral region has a section surrounded by a defect portion that penetrates the metal layer in a plan view, The mask of claim 1 , wherein the defect overlies the first layer.

13. an intermediate layer located between the second surface and the third surface and including an intermediate opening overlapping the first opening; the peripheral region has a section surrounded by a defect portion that penetrates the metal layer in a plan view, The mask of claim 1 , wherein the defect overlaps the intermediate layer.

14. The mask according to claim 1 , wherein a material having a lower conductivity than the metal layer is disposed in the recess or the defect.

15. The mask according to claim 1 , wherein silicon oxide or silicon nitride is disposed in the recess or the defect.

16. The mask of claim 1 , wherein the compartments comprise a metal different from the metal forming the active area.

17. The mask according to claim 1 , wherein a wall surface defining the first opening includes a tapered surface that approaches or moves away from a center of the first opening as it moves from the first surface to the second surface in a plan view.

18. 18. The mask of claim 17, wherein the tapered surface directly connects to the second surface.

19. the wall surfaces defining the first opening include a pair of first direction wall surfaces extending in a first direction and facing each other, and a pair of second direction wall surfaces extending in a second direction different from the first direction and facing each other, At least one of the first direction wall surface and the second direction wall surface includes a tapered surface that approaches or moves away from the center of the first opening as it moves from the first surface to the second surface, The mask according to claim 1 , wherein a dimension of the first direction wall surface measured in a direction perpendicular to the first direction is different from a dimension of the second direction wall surface measured in a direction perpendicular to the second direction.

20. 20. The mask of claim 19, wherein a difference between a dimension of the first direction wall surface measured in a direction perpendicular to the first direction and a dimension of the second direction wall surface measured in a direction perpendicular to the second direction is 5 μm or more.

21. 20. The mask of claim 19, wherein the tapered surface directly connects to the second surface.

22. the wall surfaces defining the first opening include a pair of first direction wall surfaces extending in a first direction and facing each other, and a pair of second direction wall surfaces extending in a second direction different from the first direction and facing each other, the first direction wall surface includes a first direction tapered surface that approaches or moves away from the center of the first opening as it moves from the first surface to the second surface, the second direction wall surface includes a second direction tapered surface that approaches or moves away from the center of the first opening as it moves from the first surface to the second surface, 2. The mask of claim 1, wherein a first direction taper width, which is the dimension of the first direction tapered surface measured in a direction perpendicular to the first direction, and a second direction taper width, which is the dimension of the second direction tapered surface measured in a direction perpendicular to the second direction, are different.

23. 23. The mask of claim 22, wherein a difference between the taper width in the first direction and the taper width in the second direction is 5 [mu]m or more.

24. 23. The mask of claim 22, wherein the first directionally tapered surface and the second directionally tapered surface directly connect to the second surface.

25. A method for manufacturing an organic device, comprising the step of forming an organic layer on a substrate by vapor deposition using the mask according to claim 1 .

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