Vision sensor

Abstract

To provide a vision sensor.SOLUTION: A vision sensor includes: a first semiconductor die including a plurality of photoelectric conversion element groups; and a second semiconductor die including a dynamic vision sensor (DVS) pixel circuit and stacked on the first semiconductor die in a copper-copper bonding manner. In each of the plurality of photoelectric conversion element groups includes a first type photoelectric conversion element configured to output an electrical signal corresponding to an amount of light incident on the first type photoelectric conversion element, and a plurality of second type photoelectric conversion elements. Each of the plurality of second type photoelectric conversion elements is configured to output a charge corresponding to an amount of light incident on each second type photoelectric conversion element, the DVS pixel circuit is configured to output an event signal based on the charge generated by the plurality of second type photoelectric conversion elements, and in each of the plurality of photoelectric conversion element groups, a total number of the plurality of second type photoelectric conversion elements is greater than a total number of the first type photoelectric conversion elements.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device, and more particularly to a vision sensor. [Background technology]

[0002] Human-computer interaction Human-computer interaction (HCI) is expressed and operated in the user interface. A variety of user interfaces that recognize user input provide natural human-computer interaction. A variety of sensors can be used to recognize user input.

[0003] An image sensor device generates an electrical signal or a digital signal based on incident light from the outside. Recently, event-based sensors, such as dynamic vision sensors (DVS), have been developed to output an event signal in response to changes in the size of incident light. Event-based sensors output event signals using various components such as converters and amplifiers. Summary of the Invention [Problem to be solved by the invention]

[0004] The problem that the present invention aims to solve is to provide a vision sensor with improved performance. [Means for solving the problem]

[0005] The vision sensor includes a first semiconductor die including a plurality of photoelectric conversion element groups, and a second semiconductor die including a dynamic vision sensor (DVS) pixel circuit and stacked on the first semiconductor die using a copper-copper bonding method, wherein each of the plurality of photoelectric conversion element groups includes a first-type photoelectric conversion element configured to output an electrical signal corresponding to the amount of light incident on the first-type photoelectric conversion element, and a plurality of second-type photoelectric conversion elements, wherein each of the plurality of second-type photoelectric conversion elements is configured to output a charge corresponding to the amount of light incident on the second-type photoelectric conversion element, and the DVS pixel circuit is configured to output an event signal based on the charge generated by the plurality of second-type photoelectric conversion elements, and in each of the plurality of photoelectric conversion element groups, the total number of the plurality of second-type photoelectric conversion elements is greater than the total number of the first-type photoelectric conversion elements.

[0006] The vision sensor includes a first semiconductor die including a first-type photoelectric conversion element and a second-type photoelectric conversion element, and a second semiconductor die including a dynamic vision sensor (DVS) pixel circuit, a selection transistor, and a drive transistor corresponding to the first-type photoelectric conversion element, wherein the first-type photoelectric conversion element is configured to output an electrical signal corresponding to an amount of light incident on the first-type photoelectric conversion element, the second-type photoelectric conversion element is configured to output a charge corresponding to an amount of light incident on the second-type photoelectric conversion element, and the DVS pixel circuit is configured to output an event signal based on the charge generated by the second-type photoelectric conversion element, and the first semiconductor die is connected to the second semiconductor die by a copper-to-copper (Cu-to-Cu) junction. The total number of second-type photoelectric conversion elements is greater than the total number of first-type photoelectric conversion elements.

[0007] The vision sensor includes a first semiconductor die including a plurality of photoelectric conversion element groups, a second semiconductor die including a dynamic vision sensor (DVS) pixel circuit and stacked on the first semiconductor die using a copper-to-copper bonding method, and a complementary metal-oxide semiconductor (CMOS) (Complementary Metal-Oxide Semiconductor) (CMOS) and a third semiconductor die including a CIS (Contour Image Sensor) logic and a DVS logic, wherein each of the plurality of photoelectric conversion element groups includes a first-type photoelectric conversion element and a plurality of second-type photoelectric conversion elements, wherein the first-type photoelectric conversion element is configured to output an electrical signal corresponding to an amount of light incident on the first-type photoelectric conversion element, and each of the plurality of second-type photoelectric conversion elements is configured to output a charge corresponding to an amount of light incident on the second-type photoelectric conversion element, and the DVS pixel circuit is configured to output an event signal based on the charge generated by the plurality of second-type photoelectric conversion elements, and wherein in each of the plurality of photoelectric conversion element groups, the total number of the plurality of second-type photoelectric conversion elements is greater than the total number of the first-type photoelectric conversion elements, and the third semiconductor die is stacked on the second semiconductor die. [Effects of the Invention]

[0008] According to an embodiment of the present invention, the vision sensor includes a first pixel and a second pixel, which can reduce the size of the vision sensor and improve the performance of the vision sensor. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a block diagram illustrating an image processing device 10 according to an embodiment of the present invention. [Figure 2] FIG. 1 is a block diagram illustrating a vision sensor 100 according to an embodiment of the present invention. [Figure 3] 1 is a circuit diagram showing three second-type photoelectric conversion elements PD2 and a DVS pixel unit circuit DUC according to an embodiment of the present invention. FIG. [Figure 4] 1 is a perspective view of a vision sensor 1000 including a first-type photoelectric conversion element PD1 and a second-type photoelectric conversion element PD2 according to an embodiment of the present invention. [Figure 5] 1 is a diagram showing an example of a photoelectric conversion element array PA according to an embodiment of the present invention. [Figure 6A] 1 is a diagram showing an example of a photoelectric conversion element array PA according to an embodiment of the present invention. [Figure 6B] 1 is a diagram showing an example of a photoelectric conversion element array PA according to an embodiment of the present invention. [Figure 6C] 1 is a diagram showing an example of a photoelectric conversion element array PA according to an embodiment of the present invention. [Figure 7] 1 is a diagram showing an example of a photoelectric conversion element array PA according to an embodiment of the present invention. [Figure 8] 8 is a circuit diagram showing a second-type photoelectric conversion element PD2 and a DVS pixel unit circuit DUC of the photoelectric conversion element group PDG of FIG. 7 according to an embodiment of the present invention. [Figure 9A] 8 is a circuit diagram showing four second-type photoelectric conversion elements PD2 and a first DVS pixel unit circuit DUC1 of the photoelectric conversion element group PDG of FIG. 7 according to one embodiment of the present invention. [Figure 9B] 8 is a circuit diagram showing the remaining four second-type photoelectric conversion elements PD2 and second pixel unit circuits DUC2 of the photoelectric conversion element group PDG of FIG. 7 according to one embodiment of the present invention. FIG. [Figure 10A] 8 is a circuit diagram showing three second-type photoelectric conversion elements PD2 and a first DVS pixel unit circuit DUC1 of the photoelectric conversion element group PDG of FIG. 7. FIG. [Figure 10B] 8 is a circuit diagram showing the remaining five second-type photoelectric conversion elements PD2 and second pixel unit circuits DUC2 of the photoelectric conversion element group PDG of FIG. 7 according to one embodiment of the present invention. FIG. [Figure 11A] 1 is a diagram showing an example of a photoelectric conversion element array PA according to an embodiment of the present invention. [Figure 11B] 1 is a diagram showing an example of a photoelectric conversion element array PA according to an embodiment of the present invention. [Figure 11C] 1 is a diagram showing an example of a photoelectric conversion element array PA according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments of the present invention will be described clearly and in detail so as to enable those skilled in the art to easily carry out the present invention.

[0011] FIG. 1 is a block diagram showing an image processing apparatus according to an embodiment of the present invention.

[0012] 1, an image processing device 10 includes a vision sensor 100 and a processor 11. The image processing device 10 according to an embodiment of the present invention is installed in an electronic device having an image or light sensing function.

[0013] The vision sensor 100 includes a first pixel PX1 and a second pixel PX2. The first pixel PX1 indicates a pixel of a first type that is not a specific pixel and is also called a first-type pixel. Therefore, there can be several "first pixels" or "first-type pixels" of the same type. Similarly, the second pixel PX2 indicates a pixel of a second type that is not a specific pixel and is also called a second-type pixel. Therefore, there can be several "second pixels" or "second-type pixels" of the same type. The vision sensor 100 includes a first pixel PX1 for obtaining image data of an object and a second pixel PX2 that can sense the movement of the object. In one embodiment, the first pixel PX1 is a CIS (Composite Insulator Semiconductor) The second pixel PX1 is a Dynamic Vision Sensor (DVS) pixel. However, the scope of the present invention is not limited thereto. For example, the first pixel PX1 may be one of an RGB pixel, a BW pixel, an infrared (IR) pixel, or an ultraviolet (UV) pixel.

[0014] The first pixel PX1 includes a photoelectric conversion element, a transfer transistor, a reset transistor, a drive transistor, and a selection transistor. The first pixel PX1 further includes a dual conversion transistor. However, the scope of the present invention is not limited thereto, and the number of transistors and the number of photoelectric conversion elements may be increased or decreased depending on the implementation. U.S. Patent Publication No. 11,637,983 and U.S. Patent Application Publication No. 2023 / 0217129 are incorporated herein by reference. In one embodiment, the first pixel PX1 includes at least one first-type photoelectric conversion element.

[0015] For example, the first pixel PX1 is a color pixel. The first pixel PX1 is a red (R) pixel that converts light in the red spectral region into a first signal (e.g., an electrical signal). The first pixel PX1 is a green (G) pixel that converts light in the green spectral region into an electrical signal. The first pixel PX1 is a blue (B) pixel that converts light in the blue spectral region into an electrical signal. The first pixel PX1 is a cyan pixel that converts light in the blue to green spectral region into an electrical signal. The first pixel PX1 is a yellow pixel that converts light in the green to red spectral region into an electrical signal. The first pixel PX1 is a magenta pixel that converts light in the blue to red spectral region into an electrical signal. For example, the first pixel PX1 is a clear pixel.

[0016] The second pixel PX2 senses a change in the intensity of incident light and outputs a second signal (e.g., an event signal). The change in light intensity is caused by the movement of an object captured by the vision sensor 100 or by the movement of the vision sensor 100 or the image processing device 10 itself. The vision sensor 100 can generate the event signal periodically or aperiodically and can transmit the vision sensor data VDT including the event signal to the processor 11 periodically or aperiodically. The vision sensor data VDT may be generated from only the event signal generated in one frame or may be generated by grouping the event signals generated in multiple frames. In one embodiment, the second pixel PX2 includes a plurality of second-type photoelectric conversion elements.

[0017] The processor 11 processes the vision sensor data VDT received from the vision sensor 100 and detects the movement of an object (or the movement of an object on an image recognized by the image processing device 10) based on an event signal in the vision sensor data VDT. The processor 11 is an application processor or an image signal processor.

[0018] Although not shown, processor 11 may include at least one of a central processing unit (CPU) configured to execute computer program instructions for performing various processes and methods, random access memory (RAM) and read-only memory (ROM) configured to access and store data, information, and computer program instructions, input / output (I / O) devices configured to provide input and / or output to processor 11, and a storage medium or suitable type of memory in which data and / or instructions are stored. Processor 11 may also include a power supply providing suitable alternating current (AC) or direct current (DC) for powering one or more components of processor 11, and buses to allow communication between the various disclosed components.

[0019] On the other hand, the vision sensor 100 and the processor 11 are each an integrated circuit (IC). The vision sensor 100 and the processor 11 may be implemented as separate semiconductor chips, or may be implemented as a single semiconductor substrate. For example, the vision sensor 100 and the processor 11 may be implemented as separate semiconductor chips, or the vision sensor 100 and the processor 11 implemented as separate semiconductor chips may be disposed in a single package PKG. As another example, the vision sensor 100 and the processor 11 implemented as separate semiconductor substrates may be interconnected using through silicon vias (TSVs) or copper-to-copper interconnects. It may be implemented as a single chip by using a copper to copper alloy.

[0020] If the vision sensor 100 includes only the second pixel PX2 without the first pixel PX1, the vision sensor 100 cannot generate an event signal when there is no object movement, and therefore cannot provide sensor data based on the event signal. However, the vision sensor 100 according to the embodiment of the present invention uses the first pixel PX1 (i.e., a CIS pixel) and the second pixel PX2 (i.e., a DVS (Dynamic Image Sensor) pixel). Since the first pixel PX1 includes a Vision Sensor pixel, it can provide image data based on an electrical signal corresponding to the amount of light (or the quantity of light) incident on the first pixel PX1 as vision sensor data, assuming that the object is not moving. This allows it to provide data regardless of the object's movement.

[0021] In one embodiment, vision sensor 100 operates in one of first, second, and third modes. In the first mode, vision sensor 100 operates in a low-power mode by activating only the circuitry that processes data generated by second pixel PX2 and deactivating the circuitry that processes data generated by first pixel PX1. In the second mode, vision sensor 100 operates by activating all circuits related to data processing of first pixel PX1 and second pixel PX2. In the third mode, vision sensor 100 operates in the first mode for L frames or a first period of time and in the second mode for P frames or a second period of time, repeatedly. Here, L and P are natural numbers, and L and P may have the same value or different values, and the first period of time and the second period of time may have the same value or different values.

[0022] In yet another embodiment, the vision sensor 100 automatically switches to the second mode if the amount of vision sensor data output is less than the first reference amount for a third time or T frame units while operating in the first mode. The vision sensor 100 automatically switches back to the first mode if the event signal generated by the second pixel PX2 or the amount of vision sensor data based on this event signal is equal to or higher than the second reference amount for a certain time or a predetermined number of frame units while operating in the second mode. Here, T is a natural number and is a value previously set by the user. The first reference amount and the second reference amount are also values ​​previously set by the user.

[0023] FIG. 2 is a block diagram illustrating a vision sensor 100 according to one embodiment of the present invention.

[0024] 1 and 2, the vision sensor 100 includes a pixel array 110, a row driver 120, a control logic circuit 130, and a signal processing circuit 140. The signal processing circuit 140 includes a readout circuit 150 and an event detection circuit 160.

[0025] The pixel array 110 includes a plurality of pixel groups PG arranged in a matrix form, which are arranged in rows and columns.

[0026] The row driver 120 activates the first pixels PX1 in row units under the control of the control logic circuit 130. The control logic circuit 130 controls the overall operation of the vision sensor 100 based on control signals provided from the processor 11. The control logic circuit 130 controls each of the row driver 120 and the signal processing circuit 140.

[0027] The pixel signal processing circuit 140 processes a first pixel signal (e.g., an electrical signal) output from a first pixel PX1 and a second pixel signal (e.g., an event signal) output from a second pixel PX2 of the pixel array 110, and outputs vision sensor data VDT. The vision sensor data VDT includes image data IDT generated from the first pixel signal and / or event data EDT generated from the second pixel signal.

[0028] The pixel signal processing circuit 140 includes a readout circuit 150 and an event detection circuit 160. The readout circuit 150 receives first pixel signals output from each of the first pixels PX1 included in the pixel array 110, and processes the received first pixel signals to generate image data IDT.

[0029] In one embodiment, the readout circuit 150 includes a column decoder. decoder (not shown), column driver (not shown), CDS block (Correlated Double Sampling block (not shown), ADC block (Analog The readout circuit 150 includes a digital converter block (not shown), an output buffer (not shown), etc. In one embodiment, the readout circuit 150 is inactive in the first mode and is active in the second mode.

[0030] The event detection circuit 160 receives second pixel signals output from each of the second pixels PX2 included in the pixel array 110, processes the received second pixel signals, and generates event data EDT. The event detection circuit 160 includes an event representation circuit (not shown), a row AER circuit (not shown), and an output buffer (not shown). In one embodiment, the event detection circuit 160 is active in a first mode and active in a second mode.

[0031] The vision sensor 100 detects an event in which light intensity changes, determines the type of the event (i.e., whether the event is an increase or decrease in light intensity), and outputs a value corresponding to the event. For example, the event mainly occurs at the outline of a moving object.

[0032] The second pixel PX2 that senses the event among the plurality of pixels transmits a column request, a signal indicating that an event of increasing or decreasing light intensity has occurred, to the column AER circuit.

[0033] The column AER circuit transmits a response signal to the pixel in response to a column request received from the pixel that sensed the event. The pixel that received the response signal transmits polarity information of the event that occurred to the row AER circuit. The column AER circuit generates a column address of the pixel that sensed the event based on the column request received from the pixel that sensed the event.

[0034] The row AER circuit receives polarity information from the pixel that sensed the event. Based on the polarity information, the row AER circuit generates a timestamp containing information about the time the event occurred. Exemplarily, the timestamp is generated by a timestamp (not shown) included in the row AER circuit. For example, the timestamp is implemented using time ticks generated in units of several to several tens of microseconds. In response to the polarity information, the row AER circuit transmits a reset signal RST to the second pixel PX2 where the event occurred. The reset signal RST resets the second pixel PX2 where the event occurred. Furthermore, the row AER circuit generates a row address for the second pixel PX2 where the event occurred.

[0035] The output buffer 1340 generates a package based on the timestamp, the column address C_ADDR, the row address R_ADDR, and the polarity information Pol. The output buffer 1340 adds a header to the front end of the package to indicate the start of the package, and a tail to the rear end to indicate the end of the package. For example, in the above-mentioned column AER At least some of the DVS peripheral circuits 1320, row AER 1330, and output buffer 1340 are referred to as DVS peripheral circuits.

[0036] As described above, the vision sensor 100 is a hybrid sensor that includes both the first pixel PX1 and the second pixel PX2. The vision sensor 100 generates and outputs both image data IDT and event data EDT. Depending on whether the vision sensor 100 is in the first mode or the second mode, the vision sensor 100 outputs only the image data IDT or only the event data EDT.

[0037] In one embodiment, the first-type photoelectric conversion element refers to the photoelectric conversion element included in the first pixel PX1, and the second-type photoelectric conversion element refers to the photoelectric conversion element included in the second pixel PX2.

[0038] 3 is a circuit diagram showing three second-type photoelectric conversion elements PD2 and a DVS pixel unit circuit DUC according to an embodiment of the present invention, for example, a second pixel PX2.

[0039] The vision sensor 100 includes a DVS pixel unit circuit DUC. In one embodiment, the second pixel PX2 includes a plurality of second-type photoelectric conversion elements PD2 and a DVS pixel unit circuit DUC. The DVS pixel unit circuit DUC includes a current / voltage converter (I / V) for detecting a change in the amount of light incident on the second-type photoelectric conversion elements PD2. The DVS pixel unit circuit DUC includes a current / voltage converter 210, an amplifier circuit 220, and a comparator circuit 230. The DVS pixel unit circuit DUC is coupled to the first node N1. In one embodiment, the current / voltage converter 210, the amplifier circuit 220, and the comparator circuit 230 are disposed on the second semiconductor die DIE2. Alternatively, the current / voltage converter 210 is disposed on the first semiconductor die DIE1, and the amplifier circuit 220 and the comparator circuit 230 are disposed on the second semiconductor die DIE2.

[0040] For example, each of the second-type photoelectric conversion elements PD2 may be a photodiode, a phototransistor, or a pinned photodiode. The second-type photoelectric conversion elements PD2 are connected in parallel to the first node N1.

[0041] Each of the second-type photoelectric conversion elements PD2 is connected to a DVS pixel unit circuit DUC. Each of the three second-type photoelectric conversion elements PD2 is connected to a first node N1 and shares a current-to-voltage converter 210, an amplifier circuit 220, and a comparison circuit 230. In one embodiment, each of the three second-type photoelectric conversion elements PD2 shares the current-to-voltage converter 210 disposed on the first semiconductor die DIE1 and is connected to the amplifier circuit 220 and comparison circuit 230 disposed on the second semiconductor die DIE2 via the first node N1.

[0042] The current-to-voltage converter 210 is a logarithmic amplifier. The logarithmic amplifier LA includes a logarithmic amplifier (log amplifier) ​​LA and a feedback transistor FB. The logarithmic amplifier LA converts a photocurrent IP generated by at least one second-type photoelectric conversion element PD2 into a voltage and amplifies the voltage. The logarithmic amplifier LA outputs a logarithmic voltage VLOG in a logarithmic scale. The logarithmic amplifier LA is connected to at least one second-type photoelectric conversion element PD2. The feedback transistor FB is connected to at least one second-type photoelectric conversion element PD2.

[0043] The amplifier circuit 220 is configured to amplify a voltage VLOG referred to as an input voltage to generate an output voltage VDIFF. For example, the amplifier circuit 220 includes capacitors C1 and C2, a differential amplifier DA, and a switch SW operated by a reset signal RST. For example, the capacitors C1 and C2 store electrical energy generated by at least one second-type photoelectric conversion element PD2. For example, the capacitances of the capacitors C1 and C2 are set to a value that corresponds to the shortest time between two consecutive events occurring in one pixel (i.e., the refractory period). The pixel is initialized when the switch SW is switched on by a reset signal RST, which is received from the row AER circuit of the event detection circuit 160.

[0044] The comparator circuit 230 compares the level of the output voltage VDIFF of the differential amplifier DA with the reference voltage Vref, and determines whether the event detected by the pixel is an on-event or an off-event based on the comparison result. When an event of increasing light intensity is detected, the comparator circuit 230 outputs a signal (ON) indicating an on-event, and when an event of decreasing light intensity is detected, the comparator circuit 230 outputs a signal (OFF) indicating an off-event.

[0045] The pixel configurations shown in the present invention are merely exemplary, and when the current / voltage converter 210, the amplifier circuit 220, and the comparison circuit 230 are disposed on the second semiconductor die DIE2, the M second-type photoelectric conversion elements other than the three second-type photoelectric conversion elements PD2 are each connected to the first node N1 and share the current / voltage converter 210, the amplifier circuit 220, and the comparison circuit 230. Alternatively, when the current / voltage converter 210 is disposed on the first semiconductor die DIE1, the M second-type photoelectric conversion elements are each connected to the first node N1 via the current / voltage converter 210 disposed on the first semiconductor die DIE1 and share the amplifier circuit 220 and the comparison circuit 230.

[0046] 4 is a perspective view of a vision sensor 1000 including a first-type photoelectric conversion element PD1 and a second-type photoelectric conversion element PD2 according to an embodiment of the present invention. The vision sensor 1000 in FIG. 4 corresponds to the vision sensor 100 in FIG.

[0047] An exemplary embodiment of a vision sensor 1000 according to an embodiment of the present invention will be described in terms of its physical structure. That is, with reference to the following drawings, the embodiment of the present invention will be described based on a semiconductor die included in a vision sensor according to an embodiment of the present invention. To facilitate explanation of the technical concept of the present invention, the components shown in the following drawings are simplified and are different from actual semiconductor wafers, semiconductor chips, semiconductor dies, semiconductor packages, etc.

[0048] 4, the vision sensor 1000 includes first to third semiconductor dies DIE1 to DIE3. The first to third semiconductor dies DIE1 to DIE3 are fabricated using different semiconductor processes or different semiconductor wafers. The first semiconductor die DIE1 is electrically connected to the second semiconductor die DIE2 and the third semiconductor die DIE3 on the second semiconductor die DIE2. The second semiconductor die DIE2 is electrically connected to the third semiconductor die DIE3 on the third semiconductor die DIE3. In other words, the second semiconductor die DIE2 is located between the first and third semiconductor dies DIE1 and DIE3.

[0049] In one embodiment, the first semiconductor die DIE1 includes a photoelectric conversion element array region PDA and a first pad PAD1. The photoelectric conversion element array region PDA and the first pad PAD1 may be physically separated from each other or may be spaced apart by a predetermined distance. A plurality of first-type photoelectric conversion elements PD1 and a plurality of second-type photoelectric conversion elements PD2 are disposed within the photoelectric conversion element array region PDA. The first-type photoelectric conversion elements PD1 and the second-type photoelectric conversion elements PD2 are formed in the photoelectric conversion element array region PDA of the first semiconductor die DIE1.

[0050] In one embodiment, the plurality of first-type photoelectric conversion elements PD are connected to the CIS pixel circuit 1200 of the second semiconductor die DIE2 via the first connection structure IF1, and the plurality of second-type photoelectric conversion elements PD2 are connected to the DVS pixel circuit 1300 via the second connection structure IF2. In one embodiment, charges generated by the plurality of first-type photoelectric conversion elements PD1 may be transmitted to the CIS pixel circuit 1200 via the first connection structure IF1 when none of the plurality of drive transistors and the plurality of select transistors corresponding to the plurality of first-type photoelectric conversion elements PD1 are disposed on the first semiconductor die DIE1. Also, when at least one of the plurality of drive transistors and the plurality of select transistors is disposed on the second semiconductor die DIE2, an electrical signal generated based on the charges generated by the plurality of first-type photoelectric conversion elements PD1 may be transmitted to the CIS pixel circuit 1200 via the first connection structure IF1. The charges generated by the plurality of second-type photoelectric conversion elements PD2 or the amplified voltage generated based on the charges generated by the plurality of second-type photoelectric conversion elements PD2 are transmitted to the DVS pixel circuit 1300 via the second connection structure IF2.

[0051] In one embodiment, the first and second connection structures IF1 and IF2 refer to various configurations for electrically connecting the first-type photoelectric conversion element PD1 and the second-type photoelectric conversion element PD2 to the CIS pixel circuit 1200 and the DVS pixel circuit 1300. For example, the first and second connection structures IF1 and IF2 may be electrical wiring, wires, solder balls, bumps, TSVs (Through Silicon Via), etc. For example, the first and second connection structures IF1 and IF2 are connected by a copper-to-copper bonding method. The first and second semiconductor dies DIE1 and DIE2 are connected by a copper-to-copper bonding method.

[0052] In one embodiment, the first connection structure IF1 is arranged in an area where the photoelectric conversion element array area PDA, in which a plurality of first-type photoelectric conversion elements PD1 are arranged, and the CIS pixel circuit 1200 overlap, and the second connection structure IF2 is arranged in an area where the photoelectric conversion element array area PDA, in which a plurality of second-type photoelectric conversion elements PD2 are arranged, and the DVS pixel circuit 1300 overlap.

[0053] In one embodiment, the second semiconductor die DIE2 includes a CIS pixel circuit 1200, a DVS pixel circuit 1300, and a second pad PAD2. The CIS pixel circuit 1200 includes a CIS pixel unit circuit coupled to at least one first-type photoelectric conversion element PD1. The CIS pixel circuit 1200 includes a plurality of CIS pixel unit circuits, such as a transfer transistor, a reset transistor, a drive transistor, and a select transistor.

[0054] In one embodiment, the CIS pixel unit circuit includes at least one of a transfer transistor, a reset transistor, a drive transistor, and a select transistor (e.g., a drive transistor and a select transistor), with the remainder being disposed on the first semiconductor die DIE1. In one embodiment, the transfer transistor, the reset transistor, the drive transistor, and the select transistor are disposed on the first semiconductor die DIE1, and an output signal generated by the first semiconductor die DIE1 is transmitted to the third semiconductor die DIE3 via a connection structure coupled to the first pad PAD1, the second pad PAD2, and / or the third pad PAD33. The DVS pixel circuit 1300 includes multiple DVS photoelectric conversion element unit circuits (DUCs in FIG. 3). In one embodiment, a portion of the DVS photoelectric conversion element unit circuits DUCs (e.g., the current-to-voltage converter 210) are disposed on the first semiconductor die DIE1, and the remainder are disposed on the second semiconductor die DIE2.

[0055] The DVS pixel circuit 1300 includes multiple DVS pixel unit circuits (DUCs in FIG. 3). In one embodiment, a portion of the DVS pixel unit circuits DUCs (e.g., I / V converter 210) are located on a first semiconductor die DIE1, and the remaining portion is located on a second semiconductor die DIE2.

[0056] In one embodiment, the second semiconductor die DIE2 includes only the DVS pixel circuit 1300. The first semiconductor die DIE1 includes a first pixel PX1 and a second-type photoelectric conversion element PD2. That is, the first semiconductor die DIE1 includes a first-type photoelectric conversion element PD1, a transfer transistor, a reset transistor, a drive transistor, a selection transistor, and a second-type photoelectric conversion element PD2. An electrical signal output from the first pixel PX1 disposed on the first semiconductor die DIE1 is transmitted to the third semiconductor die DIE3 via a connecting structure.

[0057] In one embodiment, the first-type photoelectric conversion element PD1 and the transfer transistor are disposed on a first semiconductor die DIE1, and the reset transistor, drive transistor, select transistor, etc. corresponding to the first-type photoelectric conversion element PD1 are disposed on a second semiconductor die DIE2.

[0058] In one embodiment, the CIS pixel circuit 1200 and the DVS pixel circuit 1300 of the second semiconductor die DIE2 receive charges, voltages, or electrical signals from the first semiconductor die DIE1 and generate output signals (e.g., electrical signals or event signals). The output signals generated by the first semiconductor die DIE1 and / or the second semiconductor die DIE2 are transmitted to the third semiconductor die DIE3 via a connecting structure connected to the first pad PAD1, the second pad PAD2, and / or the third pad PAD3.

[0059] In one embodiment, the third semiconductor die DIE3 includes a digital logic circuit area DLA and a third pad PAD3. The digital logic circuit area DLA is an area for forming the column driver 120, the control logic circuit 130, and the signal processing circuit 140 shown in FIG.

[0060] The third semiconductor die DIE3 includes the remaining components of the vision sensor 100 that are not formed on the first semiconductor die DIE1 and the second semiconductor die DIE2. For example, the third semiconductor die DIE3 may include a CIS logic, a DVS logic, an analog-to-digital converter (ADC), and other components. The third semiconductor die DIE3 may further include a digital-to-digital converter (ADC), a correlated-double sampler (CDS), etc. For example, although not shown, the third semiconductor die DIE3 may further include a processor (e.g., processor 11 in FIG. 1) or an image signal processor ISP.

[0061] In one embodiment, in the first mode, at least one of the transfer transistor, drive transistor, and select transistor of the first pixel PX1 and the CIS logic may be inactive, so that the first pixel PX1 does not output charges or electrical signals, and the select transistor of the first pixel PX1 may be inactive. In the second mode, the transfer transistor, drive transistor, select transistor, and the CIS logic of the first pixel PX1 are active.

[0062] In one embodiment, in the first mode, the DVS pixel circuit 1300, the DVS logic is active, and in the second mode, the second pixel PX2, the DVS pixel circuit 1300, and the DVS logic are active.

[0063] In one embodiment, the vision sensor 100 switches modes under the control of the control logic circuit 130 of Figure 2. For example, the vision sensor 100 switches from the first mode to the second mode or from the second mode to the first mode under the control of the control logic circuit 130.

[0064] In one embodiment, vision sensor 100 switches modes under the control of a processor (e.g., processor 11 in FIG. 1) or image signal processor ISP. For example, vision sensor 100 is switched from the first mode to the second mode or from the second mode to the first mode under the control of a processor (e.g., processor 11 in FIG. 1) or image signal processor ISP. Vision sensor 100 receives a mode conversion signal from the processor (e.g., processor 11 in FIG. 1) or image signal processor ISP. Vision sensor 100 switches modes from the first mode to the second mode or from the second mode to the first mode in response to the mode conversion signal.

[0065] FIG. 5 is a diagram showing an example of a photoelectric conversion element array PA according to an embodiment of the present invention.

[0066] 2 and 5, the pixel array 110 includes a photoelectric conversion element array PA. The photoelectric conversion element array PA includes a plurality of photoelectric conversion element groups PDG arranged in rows and columns. The photoelectric conversion element group PDG includes a plurality of second-type photoelectric conversion elements PD2 and at least one first-type photoelectric conversion element PD1. In the photoelectric conversion element group PDG, the number of first-type photoelectric conversion elements PD1 is less than the number of second-type photoelectric conversion elements PD2.

[0067] In one embodiment, the photoelectric conversion element group PDG includes M second-type photoelectric conversion elements PD2 and N first-type photoelectric conversion elements PD1. For example, M is '3' and N is '1'. In the photoelectric conversion element group PDG, the first row and the first column correspond to the first-type photoelectric conversion elements PD1, the first row and the second column correspond to the second-type photoelectric conversion elements PD2, the second row and the first column correspond to the second-type photoelectric conversion elements PD2, and the second row and the second column correspond to the second-type photoelectric conversion elements PD2.

[0068] The photoelectric conversion element array PA includes 16 photoelectric conversion elements arranged in a 4x4 array (e.g., 4 rows and 4 columns). The photoelectric conversion element array PA includes four photoelectric conversion element groups PDG arranged in a 2x2 array (e.g., 2 columns x 2 columns). The position of the first-type photoelectric conversion element PD1 in the photoelectric conversion element group PDG is the same in each photoelectric conversion element group PDG. That is, the relative position of the first-type photoelectric conversion element PD1 in each photoelectric conversion element group PGD may be the same. For example, the first-type photoelectric conversion element PD1 is arranged in the first row and first column of the photoelectric conversion element group PDG. In the photoelectric conversion element array PA, the first-type photoelectric conversion element PD1 is arranged in the first row and the first column, the first-type photoelectric conversion element PD1 is arranged in the first row and the third column, the first-type photoelectric conversion element PD1 is arranged in the third row and the first column, and the first-type photoelectric conversion element PD1 is arranged in the third row and the third column.

[0069] A plurality of first-type photoelectric conversion elements PD1 included in the photoelectric conversion element group PDG share a CIS pixel unit circuit, and a plurality of second-type photoelectric conversion elements PD2 included in the photoelectric conversion element group PDG share a DVS pixel unit circuit DUC.

[0070] In one embodiment, the total number of second-type photoelectric conversion elements PD2 in the first photoelectric conversion element group among the multiple photoelectric conversion element groups PDG is the same as the total number of second-type photoelectric conversion elements PD2 in the second photoelectric conversion element group among the multiple photoelectric conversion element groups PDG. However, the scope of the present invention is not limited thereto. The total number of second-type photoelectric conversion elements PD2 in the first photoelectric conversion element group among the multiple photoelectric conversion element groups PDG may be different from the total number of second-type photoelectric conversion elements PD2 in the second photoelectric conversion element group among the multiple photoelectric conversion element groups PDG.

[0071] 6A to 6C are diagrams showing an example of a photoelectric conversion element array PA according to an embodiment of the present invention.

[0072] 2, 6A, 6B, and 6C, the photoelectric conversion element array PA includes 64 photoelectric conversion elements arranged in an 8x8 matrix (i.e., 8 rows and 8 columns). The photoelectric conversion element array PA includes 4 photoelectric conversion element groups PDG arranged in a 2x2 matrix (i.e., 2 rows and 2 columns). Each photoelectric conversion element group PDG includes 4 photoelectric conversion element units PU1 to PU4 arranged in a 2x2 matrix (i.e., 2 rows and 2 columns). Each of the photoelectric conversion element units PU1 to PU4 includes 4 photoelectric conversion elements arranged in a 2x2 matrix (i.e., 2 rows and 2 columns). The total number of second-type photoelectric conversion elements PD2 in the first photoelectric conversion element unit PU1 is the same as the total number of second-type photoelectric conversion elements PD2 in the second photoelectric conversion element unit PU2. However, the scope of the present invention is not limited thereto. The total number of second-type photoelectric conversion elements PD2 in the first photoelectric conversion element unit PU1 may be different from the total number of second-type photoelectric conversion elements PD2 in the second photoelectric conversion element unit PU2.

[0073] For example, the photoelectric conversion element group PDG corresponds to the pixel group PG. The pixel group PG includes a plurality of pixel units. The pixel unit corresponds to the photoelectric conversion element unit. The pixel unit includes a plurality of second pixels PX2 and at least one first pixel PX1.

[0074] In one embodiment, each of the photoelectric conversion element units PU1 to PU4 includes M second-type photoelectric conversion elements PD2 and N first-type photoelectric conversion elements PD1, where M and N are natural numbers, and M is greater than N. For example, M is 3 and N is 1. In each of the photoelectric conversion element units PU1 to PU4, the number of second-type photoelectric conversion elements PD2 is greater than the number of first-type photoelectric conversion elements PD1.

[0075] In one embodiment, the positions of the first-type photoelectric conversion elements PD1 included in each of the photoelectric conversion element units PU1 to PU4 included in the photoelectric conversion element group PDG are all the same. Referring to Figure 6A, in each of the photoelectric conversion element units PU1 to PU4, the first-type photoelectric conversion elements PD1 are arranged in the first row and first column, the second-type photoelectric conversion elements PD2 are arranged in the first row and second column, the second-type photoelectric conversion elements PD2 are arranged in the second row and first column, and the second-type photoelectric conversion elements PD2 are arranged in the second row and second column.

[0076] In one embodiment, the first-type photoelectric conversion elements PD1 included in the photoelectric conversion element group PDG may be the same or different. The first-type photoelectric conversion elements PD1 included in the photoelectric conversion element units PU1 to PU4 may be the same or different types. For example, the first-type photoelectric conversion elements PD1 included in the photoelectric conversion element group PDG may have any of RGGB, RCCC, RYYC, RGBC, and RGBW pixel structures. However, the scope of the present invention is not limited thereto, and the first-type photoelectric conversion elements PD1 of the photoelectric conversion element group PDG may include at least one of a red (R) pixel, a green (G) pixel, a blue (B) pixel, a cyan (C) pixel, a yellow (Y) pixel, a magenta (M) pixel, a clear (CL) pixel, a white (W) pixel, or a combination thereof.

[0077] The pixel group PG corresponds to the photoelectric conversion element group PDG. The pixel group PG includes four first pixels PX1. The photoelectric conversion element group PDG has four first-type photoelectric conversion elements PD1. The photoelectric conversion element group PDG includes a first-type photoelectric conversion element PD1 corresponding to one red (R) pixel, first-type photoelectric conversion elements PD1 corresponding to two green (G) pixels, and a first-type photoelectric conversion element PD1 corresponding to one blue (B) pixel. The first pixels PX1 of the pixel group PG have a pixel structure of RGGB. For example, the first-type photoelectric conversion element PD1 of the first photoelectric conversion element unit PU1 corresponds to a red (R) pixel, the first-type photoelectric conversion element PD1 of the second photoelectric conversion element unit PU2 corresponds to a green (G) pixel, the first-type photoelectric conversion element PD1 of the third photoelectric conversion element unit PU3 corresponds to a green (G) pixel, and the first-type photoelectric conversion element PD1 of the fourth photoelectric conversion element unit PU4 corresponds to a blue (B) pixel.

[0078] For example, the first pixel PX1 of the pixel group PG has an RCCC structure. For example, the pixel group PG includes one red (R) pixel and three cyan (C) pixels. For example, the first-type photoelectric conversion element PD1 of the first photoelectric conversion element unit PU1 corresponds to the red (R) pixel, the first-type photoelectric conversion element PD1 of the second photoelectric conversion element unit PU2 corresponds to the cyan (C) pixel, the first-type photoelectric conversion element PD1 of the third photoelectric conversion element unit PU3 corresponds to the cyan (C) pixel, and the first-type photoelectric conversion element PD1 of the fourth photoelectric conversion element unit PU4 corresponds to the cyan (C) pixel.

[0079] The first pixel PX1 of the pixel group PG has an RYYC structure. For example, the pixel group PG includes one red (R) pixel, two yellow (Y) pixels, and one cyan (C) pixel. For example, the first-type photoelectric conversion element PD1 of the first photoelectric conversion element unit PU1 corresponds to the red (R) pixel, the first-type photoelectric conversion element PD1 of the second photoelectric conversion element unit PU2 corresponds to the yellow (Y) pixel, the first-type photoelectric conversion element PD1 of the third photoelectric conversion element unit PU3 corresponds to the yellow (Y) pixel, and the first-type photoelectric conversion element PD1 of the fourth photoelectric conversion element unit PU4 corresponds to the cyan (C) pixel.

[0080] The first pixel PX1 of the pixel group PG has an RGBC structure. That is, the pixel group PG includes one red (R) pixel, one green (G) pixel, one blue (B) pixel, and one cyan (C) pixel. For example, the first-type photoelectric conversion element PD1 of the first photoelectric conversion element unit PU1 corresponds to the red (R) pixel, the first-type photoelectric conversion element PD1 of the second photoelectric conversion element unit PU2 corresponds to the green (G) pixel, the first-type photoelectric conversion element PD1 of the third photoelectric conversion element unit PU3 corresponds to the blue (B) pixel, and the first-type photoelectric conversion element PD1 of the fourth photoelectric conversion element unit PU4 corresponds to the cyan (C) pixel.

[0081] The first pixel PX1 of the pixel group PG has an RGBW structure. That is, the pixel group PG includes one red (R) pixel, one green (G) pixel, one blue (B) pixel, and one white (W) pixel. For example, the first-type photoelectric conversion element PD1 of the first photoelectric conversion element unit PU1 corresponds to the red (R) pixel, the first-type photoelectric conversion element PD1 of the second photoelectric conversion element unit PU2 corresponds to the green (G) pixel, the first-type photoelectric conversion element PD1 of the third photoelectric conversion element unit PU3 corresponds to the blue (B) pixel, and the first-type photoelectric conversion element PD1 of the fourth photoelectric conversion element unit PU4 corresponds to the white (W) pixel.

[0082] In one embodiment, the first pixels PX1 included in the pixel group PG may not share the reset transistor, the drive transistor, and the select transistor. The first pixels PX1 corresponding to each of the photoelectric conversion element units PU1 to PU4 include their own reset transistor, their own drive transistor, and their own select transistor (e.g., each of the first pixels PX1 includes a reset transistor, a drive transistor, a select transistor, etc.).

[0083] For example, the first pixel PX1 corresponding to the first photoelectric conversion element unit PU1 includes a first-type photoelectric conversion element PD1, a first transfer transistor, a first reset transistor, a first drive transistor, and a first selection transistor; the first pixel PX1 corresponding to the second photoelectric conversion element unit PU2 includes a first-type photoelectric conversion element PD1, a second transfer transistor, a second reset transistor, a second drive transistor, and a second selection transistor; the first pixel PX1 corresponding to the third photoelectric conversion element unit PU3 includes a first-type photoelectric conversion element PD1, a third transfer transistor, a third reset transistor, a third drive transistor, and a third selection transistor; and the first pixel PX1 corresponding to the fourth photoelectric conversion element unit PU4 includes a first-type photoelectric conversion element PD1, a fourth transfer transistor, a fourth reset transistor, a fourth drive transistor, and a fourth selection transistor. The first to fourth reset transistors are different from one another, the first to fourth drive transistors are different from one another, and the first to fourth selection transistors are different from one another.

[0084] The first-type photoelectric conversion element PD1, transfer transistor, reset transistor, drive transistor, and selection transistor included in the first pixel PX1 are formed on the first semiconductor die DIE1. Alternatively, the dual conversion transistor further included in the first pixel PX1 is formed on the first semiconductor die DIE1. The second-type photoelectric conversion element PD2 included in the second pixel PX2 is formed on the first semiconductor die DIE1. The second-type photoelectric conversion elements PD2 included in the photoelectric conversion element group PDG share a DVS pixel unit circuit DUC. The DVS pixel unit circuit DUC is formed on the second semiconductor die DIE2.

[0085] 6B, the positions of the first-type photoelectric conversion elements PD1 included in each of the photoelectric conversion element units PU1 to PU4 included in the photoelectric conversion element group PDG are all different. For example, in the first photoelectric conversion element unit PU1, the second-type photoelectric conversion elements PD2 are arranged in the first row and first column, the second-type photoelectric conversion elements PD2 are arranged in the first row and second column, the second-type photoelectric conversion elements PD2 are arranged in the second row and first column, and the first-type photoelectric conversion elements PD1 are arranged in the second row and second column. In the second photoelectric conversion element unit PU2, the second-type photoelectric conversion elements PD2 are arranged in the first row and first column, the second-type photoelectric conversion elements PD2 are arranged in the first row and second column, the first-type photoelectric conversion elements PD1 are arranged in the second row and first column, and the second-type photoelectric conversion elements PD2 are arranged in the second row and second column. In the third photoelectric conversion element unit PU3, the second-type photoelectric conversion elements PD2 are arranged in the first row and first column, the first-type photoelectric conversion elements PD1 are arranged in the first row and second column, the second-type photoelectric conversion elements PD2 are arranged in the second row and first column, and the second-type photoelectric conversion elements PD2 are arranged in the second row and second column. In the fourth photoelectric conversion element unit PU4, the first-type photoelectric conversion elements PD1 are arranged in the first row and first column, the second-type photoelectric conversion elements PD2 are arranged in the first row and second column, the second-type photoelectric conversion elements PD2 are arranged in the second row and first column, and the second-type photoelectric conversion elements PD2 are arranged in the second row and second column.

[0086] For example, in the photoelectric conversion element group PDG, a first-type photoelectric conversion element PD1 is arranged in the second row and second column, a first-type photoelectric conversion element PD1 is arranged in the second row and third column, a first-type photoelectric conversion element PD1 is arranged in the third row and second column, and a first-type photoelectric conversion element PD1 is arranged in the third row and third column. Each of the first-type photoelectric conversion elements PD1 is arranged at an edge where the photoelectric conversion element units PU1 to PU4 meet. Each of the first-type photoelectric conversion elements PD1 is arranged at an edge of the photoelectric conversion element unit where one of the first to fourth photoelectric conversion element units PU1 to PU4 meets another of the first to fourth photoelectric conversion element units PU1 to PU4 (for example, the first-type photoelectric conversion elements PD1 of adjacent photoelectric conversion element units are adjacent to each other). Each of the first-type photoelectric conversion elements PD1 is arranged in the middle portion (or center portion) of the photoelectric conversion element group PDG.

[0087] In one embodiment, the first-type photoelectric conversion elements PD1 included in the photoelectric conversion element groups PDG are identical. The first-type photoelectric conversion elements PD1 included in the photoelectric conversion element units PU1 to PU4 are all of the same type. For example, the first-type photoelectric conversion elements PD1 included in the photoelectric conversion element groups PDG are red (R) pixels. That is, the first-type photoelectric conversion element PD1 included in the first photoelectric conversion element unit PU1 is a red (R) pixel, the first-type photoelectric conversion element PD1 included in the second photoelectric conversion element unit PU2 is a red (R) pixel, the first-type photoelectric conversion element PD1 included in the third photoelectric conversion element unit PU3 is a red (R) pixel, and the first-type photoelectric conversion element PD1 included in the fourth photoelectric conversion element unit PU4 is a red (R) pixel.

[0088] In one embodiment, the first-type photoelectric conversion elements PD1 of the photoelectric conversion element group PDG may not share the reset transistor, the drive transistor, and the select transistor, and each of the first pixels PX1 corresponding to each of the photoelectric conversion element units PU1 to PU4 includes a different reset transistor, the drive transistor, and the select transistor.

[0089] In one embodiment, the first-type photoelectric conversion elements PD1 of the photoelectric conversion element group PDG share a reset transistor, a drive transistor, and a selection transistor. The first-type photoelectric conversion elements PD1 of the photoelectric conversion element group PDG also share a floating diffusion region. In one embodiment, the first-type photoelectric conversion elements PD1 of the photoelectric conversion element group PDG further share a dual conversion transistor.

[0090] In one embodiment, the second-type photoelectric conversion element PD2 of the photoelectric conversion element unit PU shares the DVS pixel unit circuit DUC. The second-type photoelectric conversion element PD2 of the photoelectric conversion element unit PU shares the current / voltage converter 210, the amplifier circuit 220, and the comparison circuit 230. The second-type photoelectric conversion element PD2 of the first photoelectric conversion element unit PU1 of the photoelectric conversion element group PDG shares the first The second-type photoelectric conversion element PD2 of the second photoelectric conversion element unit PU2 of the photoelectric conversion element group PDG shares the second DVS pixel unit circuit, the second-type photoelectric conversion element PD2 of the third photoelectric conversion element unit PU3 of the photoelectric conversion element group PDG shares the third DVS pixel unit circuit, and the second-type photoelectric conversion element PD2 of the fourth photoelectric conversion element unit PU4 of the photoelectric conversion element group PDG shares the fourth DVS pixel unit circuit. The first to fourth DVS pixel unit circuits share a common DVS pixel unit circuit. The first to fourth DVS pixel unit circuits are different from each other. Each of the first to fourth DVS pixel unit circuits includes a current-to-voltage converter, an amplifier circuit, and a comparison circuit. Each of the DVS pixel unit circuits is identical to or similar to the DVS pixel unit circuit DUC of FIG. In one embodiment, the second-type photoelectric conversion elements PD2 of the photoelectric conversion element units PDG share the DVS pixel unit circuit DUC. All of the second-type photoelectric conversion elements PD2 of the photoelectric conversion element groups PDG share the current / voltage converter 210, the amplifier circuit 220, and the comparison circuit 230. That is, in the photoelectric conversion element group PDG, the second-type photoelectric conversion elements PD2 included in the first photoelectric conversion element unit PU1, the second-type photoelectric conversion elements PD2 included in the second photoelectric conversion element unit PU2, the second-type photoelectric conversion elements PD2 included in the third photoelectric conversion element unit PU3, and the second-type photoelectric conversion elements PD2 included in the fourth photoelectric conversion element unit PU4 all share the same DVS pixel unit circuit DUC.

[0091] 6C, in one embodiment, the first pixels PX1 included in the pixel group PG are the same or different. The first pixels PX1 corresponding to the photoelectric conversion element units PU1 to PU4 have the same or different types. The pixel group PG has four first pixels PX1. The photoelectric conversion element group PDG includes a first-type photoelectric conversion element PD1 corresponding to one red (R) pixel, two first-type photoelectric conversion elements PD1 corresponding to two green (G) pixels, and one first-type photoelectric conversion element PD1 corresponding to one blue (B) pixel. The first pixels PX1 of the pixel group PG have a pixel structure of RGGB. For example, the first-type photoelectric conversion element PD1 of the first photoelectric conversion element unit PU1 corresponds to a red (R) pixel, the first-type photoelectric conversion element PD1 of the second photoelectric conversion element unit PU2 corresponds to a green (G) pixel, the first-type photoelectric conversion element PD1 of the third photoelectric conversion element unit PU3 corresponds to a green (G) pixel, and the first-type photoelectric conversion element PD1 of the fourth photoelectric conversion element unit PU4 corresponds to a blue (B) pixel.

[0092] For example, the first pixel PX1 included in the pixel group PG may have any one of the pixel structures RGGB, RCCC, RYYC, RGBC, and RGBW, although the scope of the present invention is not limited thereto. The first pixel PX1 of the pixel group PG may include at least one of a red (R) pixel, a green (G) pixel, a blue (B) pixel, a cyan (C) pixel, a yellow (Y) pixel, a magenta (M) pixel, a clear (CL) pixel, a white (W) pixel, or a combination thereof.

[0093] In one embodiment, the first-type photoelectric conversion elements PD1 of the photoelectric conversion element group PDG share a reset transistor, a drive transistor, and a selection transistor. The first-type photoelectric conversion elements PD1 of the photoelectric conversion element group PDG also share a floating diffusion region. In one embodiment, the first-type photoelectric conversion elements PD1 of the photoelectric conversion element group PDG further share a dual conversion transistor.

[0094] In one embodiment, each of the multiple photoelectric conversion element groups PDG includes multiple photoelectric conversion elements arranged in N rows and M columns. The multiple photoelectric conversion elements include a first-type photoelectric conversion element PD1 and a second-type photoelectric conversion element PD2. For example, in each of the multiple photoelectric conversion element groups PDG, the first-type photoelectric conversion element PD1 is arranged in the center of an array arranged in N rows and M columns. In this case, N and M are integers. For example, the first-type photoelectric conversion element PD1 is arranged in one of four corners formed by the array of N rows and M columns. In this case, N and M are integers. For example, a first-type photoelectric conversion element of the first photoelectric conversion element group is directly adjacent to a first-type photoelectric conversion element of the second photoelectric conversion element group. The first photoelectric conversion element group is directly adjacent to the second photoelectric conversion element group.

[0095] FIG. 7 is a diagram showing an example of a photoelectric conversion element array PA according to an embodiment of the present invention.

[0096] 7, the photoelectric conversion element array PA includes a plurality of photoelectric conversion element groups PDG arranged in rows and columns. Each photoelectric conversion element group PDG includes a plurality of second-type photoelectric conversion elements PD2 and at least one first-type photoelectric conversion element PD1. In each photoelectric conversion element group PDG, the number of first-type photoelectric conversion elements PD1 is smaller than the number of second-type photoelectric conversion elements PD2.

[0097] In one embodiment, the photoelectric conversion element group PDG includes M second-type photoelectric conversion elements PD2 and N first-type photoelectric conversion elements PD1. For example, M is '8' and N is '1'. In the photoelectric conversion element group PDG, the first row and the first column are the first-type photoelectric conversion elements PD1, the first row and the second column are the second-type photoelectric conversion elements PD2, the first row and the third column are the second-type photoelectric conversion elements PD2, the second row and the first column are the second-type photoelectric conversion elements PD2, the second row and the second column are the second-type photoelectric conversion elements PD2, the second row and the third column are the second-type photoelectric conversion elements PD2, the third row and the first column are the second-type photoelectric conversion elements PD2, the third row and the second column are the second-type photoelectric conversion elements PD2, and the third row and the third column are the second-type photoelectric conversion elements PD2.

[0098] For example, the photoelectric conversion element array PA includes 36 pixels arranged in a 6×6 matrix (i.e., six rows and six columns). The photoelectric conversion element array PA includes four photoelectric conversion element groups PDG arranged in a 2×2 matrix (i.e., two rows and two columns). The positions of the first-type photoelectric conversion elements PD1 in the photoelectric conversion element groups PDG are the same. That is, the first-type photoelectric conversion elements PD1 are arranged in the first row and first column in the photoelectric conversion element group PDG. In the photoelectric conversion element array PA, the first-type photoelectric conversion elements PD1 are arranged in the first row and first column, the first-type photoelectric conversion elements PD1 are arranged in the first row and fourth column, the first-type photoelectric conversion elements PD1 are arranged in the fourth row and first column, and the first-type photoelectric conversion elements PD1 are arranged in the fourth row and fourth column.

[0099] In one embodiment, the first pixel PX1 corresponding to the first-type photoelectric conversion element PD1 is any one of a red (R) pixel, a green (G) pixel, a blue (B) pixel, a cyan pixel, a yellow (Y) pixel, a magenta (M) pixel, a clear (C) pixel, etc.

[0100] FIG. 8 is a circuit diagram showing the second-type photoelectric conversion element PD2 and the DVS pixel unit circuit DUC of the photoelectric conversion element group PDG of FIG. 7 according to one embodiment of the present invention.

[0101] 3, 7, and 8, the DVS pixel unit circuit DUC includes a current / voltage converter 210, an amplifier circuit 220, and a comparator circuit 230 for detecting a change in the amount of light incident on the second-type photoelectric conversion element PD2. The DVS pixel unit circuit DUC is connected to a first node N1. For convenience of explanation, detailed descriptions of the above-mentioned components will be omitted.

[0102] Each second-type photoelectric conversion element PD2 is connected to a first node N1. Each second-type photoelectric conversion element PD2 is connected to a DVS pixel unit circuit DUC. Each second-type photoelectric conversion element PD2 is connected to the first node N1 and shares the current / voltage converter 210, the amplifier circuit 220, and the comparison circuit 230. That is, all second-type photoelectric conversion elements PD2 included in a photoelectric conversion element group PDG share the same DVS pixel unit circuit DUC.

[0103] FIG. 9A illustrates the four second-type photoelectric conversion elements PD2 and the first photoelectric conversion element PDG of FIG. 7 according to an embodiment of the present invention. 9B is a circuit diagram showing the remaining four second-type photoelectric conversion elements PD2 and second pixel unit circuits DUC2 of the photoelectric conversion element group PDG of FIG. 7 according to an embodiment of the present invention.

[0104] In one embodiment, the first portion of the second-type photoelectric conversion elements PD2 included in the photoelectric conversion element group PDG is A second portion of the second-type photoelectric conversion elements PD2 included in the photoelectric conversion element group PDG share the DVS pixel unit circuit DUC1, and share the second DVS pixel unit circuit DUC2.

[0105] Referring to FIGS. 3, 7, and 9A, the first The DVS pixel unit circuit DUC1 includes a current / voltage converter 210, an amplifier circuit 220, and a comparator circuit 230 for detecting a change in the amount of light incident on the first portion of the second-type photoelectric conversion element PD2. The DVS pixel unit circuit DUC1 is connected to the first node N1. For convenience of explanation, detailed descriptions of the above-mentioned components will be omitted.

[0106] Each of the first portions of the second-type photoelectric conversion elements PD2 is connected to a first node N1. The first portions of the second-type photoelectric conversion elements PD2 are connected to the first node N1 and share the current / voltage converter 210, the amplifier circuit 220, and the comparator circuit 230 of the first DVS pixel unit circuit DUC1.

[0107] Referring to Figures 3, 7, and 9B, The DVS pixel unit circuit DUC2 includes a current / voltage converter 210, an amplifier circuit 220, and a comparator circuit 230 for detecting a change in the amount of light incident on the second portion of the second-type photoelectric conversion element PD2. The DVS pixel unit circuit DUC2 is connected to a second node N2, which is different from the first node N1. For convenience of explanation, detailed descriptions of the above-mentioned components will be omitted.

[0108] The second portions of the second-type photoelectric conversion elements PD2 are connected to the second nodes N2. The second parts of the second-type photoelectric conversion elements PD2 are connected to the second node N2 and share the current / voltage converter 210, the amplifier circuit 220, and the comparator circuit 230 of the second DVS pixel unit circuit DUC2.

[0109] In one embodiment, the number of second-type photoelectric conversion elements PD2 in a photoelectric conversion element group PDG is at least K times greater than the number of first-type photoelectric conversion elements PD1, where K is an integer. For example, in a photoelectric conversion element group PDG, the total number of second-type photoelectric conversion elements PD2 is at least twice the total number of first-type photoelectric conversion elements PD1. In a photoelectric conversion element group PDG, the total number of second-type photoelectric conversion elements PD2 is at least three times the total number of first-type photoelectric conversion elements PD1. In a photoelectric conversion element group PDG, the total number of second-type photoelectric conversion elements PD2 is at least four times the total number of first-type photoelectric conversion elements PD1.

[0110] In one embodiment, when the number of second-type photoelectric conversion elements PD2 in the photoelectric conversion element group PDG is K times or more larger than the number of first pixels PX1, a first portion of the second-type photoelectric conversion elements PD2 included in the photoelectric conversion element group PDG is A second portion of the second-type photoelectric conversion elements PD2 included in the photoelectric conversion element group PDG can share a second DVS pixel unit circuit DUC2, where K is a natural number greater than '2'.

[0111] A first portion of the second-type photoelectric conversion elements PD2 included in the photoelectric conversion element group PDG is referred to as a first set, and a second portion of the second-type photoelectric conversion elements PD2 included in the photoelectric conversion element group PDG is referred to as a second set. In one embodiment, the number of second-type photoelectric conversion elements PD2 included in the first set is the same as the number of second-type photoelectric conversion elements PD2 included in the second set. For example, the number of second-type photoelectric conversion elements PD2 included in the photoelectric conversion element group PDG is '8', the number of second-type photoelectric conversion elements PD2 included in the first set is '4', and the number of second-type photoelectric conversion elements PD2 included in the second set is '4'.

[0112] FIG. 10A illustrates three second-type photoelectric conversion elements PD2 and a first photoelectric conversion element PDG of FIG. 7 according to an embodiment of the present invention. 10B is a circuit diagram showing the remaining five second-type photoelectric conversion elements PD2 and a second pixel unit circuit DUC2 of the photoelectric conversion element group PDG of FIG. 7 according to an embodiment of the present invention. For convenience of explanation, detailed descriptions of the above-mentioned components will be omitted.

[0113] A first portion of the second-type photoelectric conversion elements PD2 included in the photoelectric conversion element group PDG is referred to as a first set, and a second portion of the second-type photoelectric conversion elements PD2 included in the photoelectric conversion element group PDG is referred to as a second set. In one embodiment, the number of second-type photoelectric conversion elements PD2 included in the first set is different from the number of second-type photoelectric conversion elements PD2 included in the second set.

[0114] Referring to FIG. 10A, each of the first portions of the second-type photoelectric conversion element PD2 is connected to a first node N1. The current / voltage converter 210, the amplifier circuit 220, and the comparison circuit 230 of the DVS pixel unit circuit DUC1 are shared.

[0115] Referring to FIG. 10B, the second portions of the second-type photoelectric conversion elements PD2 are connected to the second nodes N2. The current / voltage converter 210, the amplifier circuit 220, and the comparison circuit 230 of the DVS pixel unit circuit DUC2 are shared.

[0116] In one embodiment, the number of second-type photoelectric conversion elements PD2 included in the first set may be different from the number of second-type photoelectric conversion elements PD2 included in the second set. For example, the number of second-type photoelectric conversion elements PD2 included in the photoelectric conversion element group PDG is '8', the number of second-type photoelectric conversion elements PD2 included in the first set is '3', and the number of second-type photoelectric conversion elements PD2 included in the second set is '5'.

[0117] 11A to 11C are diagrams showing an example of a photoelectric conversion element array PA according to an embodiment of the present invention.

[0118] 11A, 11B, and 11C, the photoelectric conversion element array PA includes 144 photoelectric conversion elements arranged in a 12x12 matrix (i.e., 12 rows and 12 columns). The photoelectric conversion element array PA includes four photoelectric conversion element groups PDG arranged in a 2x2 matrix (i.e., two rows and two columns). The photoelectric conversion element group PDG includes four photoelectric conversion element units PU1 to PU4 arranged in a 2x2 matrix (i.e., two rows and two columns). Each of the photoelectric conversion element units PU1 to PU4 includes nine photoelectric conversion elements arranged in a 3x3 matrix (i.e., three rows and three columns).

[0119] In one embodiment, each of the photoelectric conversion element units PU1 to PU4 includes M second-type photoelectric conversion elements PD2 and N first-type photoelectric conversion elements PD1, where M and N are natural numbers, and M is greater than N. For example, M is 8 and N is 1. In each of the photoelectric conversion element units PU1 to PU4, the number of second-type photoelectric conversion elements PD2 is greater than the number of first-type photoelectric conversion elements PD1.

[0120] 11A , in each of the photoelectric conversion element units PU1 to PU4, the first-type photoelectric conversion elements PD1 are arranged in the first row and the first column, the second-type photoelectric conversion elements PD2 are arranged in the first row and the second column, the second-type photoelectric conversion elements PD2 are arranged in the first row and the third column, the second-type photoelectric conversion elements PD2 are arranged in the second row and the first column, the second-type photoelectric conversion elements PD2 are arranged in the second row and the second column, the second-type photoelectric conversion elements PD2 are arranged in the second row and the third column, the second-type photoelectric conversion elements PD2 are arranged in the third row and the first column, the second-type photoelectric conversion elements PD2 are arranged in the third row and the second column, and the second-type photoelectric conversion elements PD2 are arranged in the third row and the third column.

[0121] In one embodiment, the first pixels PX1 included in the pixel group PG may be the same or different. The first pixels PX1 corresponding to the photoelectric conversion element units PU1 to PU4 may have the same or different types. For example, the first pixel PX1 corresponding to the first-type photoelectric conversion element PD1 included in the photoelectric conversion element group PDG may have one of the pixel structures RGGB, RCCC, RYYC, RGBC, and RGBW. However, the scope of the present invention is not limited thereto. The first pixel PX1 corresponding to the first-type photoelectric conversion element PD1 of the photoelectric conversion element group PDG may include at least one of a red (R) pixel, a green (G) pixel, a blue (B) pixel, a cyan (C) pixel, a yellow (Y) pixel, a magenta (M) pixel, a clear (CL) pixel, a white (W) pixel, or a combination thereof.

[0122] The photoelectric conversion element group PDG has four first-type photoelectric conversion elements PD1. The photoelectric conversion element group PDG includes a first-type photoelectric conversion element PD1 corresponding to one red (R) pixel, first-type photoelectric conversion elements PD1 corresponding to two green (G) pixels, and a first-type photoelectric conversion element PD1 corresponding to one blue (B) pixel. The first pixel PX1 corresponding to the first-type photoelectric conversion element PD1 of the photoelectric conversion element group PDG has an RGGB pixel structure. For example, the first-type photoelectric conversion element PD1 of the first photoelectric conversion element unit PU1 corresponds to the red (R) pixel, the first-type photoelectric conversion element PD1 of the second photoelectric conversion element unit PU2 corresponds to the green (G) pixel, the first-type photoelectric conversion element PD1 of the third pixel unit PU3 corresponds to the green (G) pixel, and the first-type photoelectric conversion element PD1 of the fourth pixel unit PU4 corresponds to the blue (B) pixel.

[0123] In one embodiment, the first-type photoelectric conversion elements PD1 included in the photoelectric conversion element group PDG may not share the reset transistor, the drive transistor, and the select transistor, and each of the first pixels PX1 corresponding to each of the photoelectric conversion element units PU1 to PU4 includes its own reset transistor, its own drive transistor, and its own select transistor.

[0124] In one embodiment, the first portion of the second-type photoelectric conversion element PD2 included in each of the photoelectric conversion element units PU1 to PU4 is The DVS pixel unit circuit DUC1 shares the current / voltage converter 210, the amplifier circuit 220, and the comparison circuit 230. The second part of the second-type photoelectric conversion element PD2 included in each of the photoelectric conversion element units PU1 to PU4 is The current / voltage converter 210, the amplifier circuit 220, and the comparison circuit 230 of the DVS pixel unit circuit DUC2 are shared.

[0125] For example, a first portion of the second-type photoelectric conversion elements PD2 included in the first photoelectric conversion element unit PU1 is referred to as a first set, and a second portion of the second-type photoelectric conversion elements PD2 included in the first photoelectric conversion element unit PU1 is referred to as a second set.

[0126] In one embodiment, the number of second-type photoelectric conversion elements PD2 included in the first set is the same as the number of second-type photoelectric conversion elements PD2 included in the second set. For example, the number of second-type photoelectric conversion elements PD2 included in the first photoelectric conversion element unit PU1 is '8', the number of second-type photoelectric conversion elements PD2 included in the first set is '4', and the number of second-type photoelectric conversion elements PD2 included in the second set is '4'.

[0127] In one embodiment, the number of second-type photoelectric conversion elements PD2 included in the first set may be different from the number of second-type photoelectric conversion elements PD2 included in the second set. For example, the number of second-type photoelectric conversion elements PD2 included in the first photoelectric conversion element unit PU1 is 8, the number of second-type photoelectric conversion elements PD2 included in the first set is 3, and the number of second-type photoelectric conversion elements PD2 included in the second set is 5.

[0128] 11B, the positions of the first-type photoelectric conversion elements PD1 included in each of the photoelectric conversion element units PU1 to PU4 included in the photoelectric conversion element group PDG are all different. In one embodiment, the first-type photoelectric conversion element PD1 of the first photoelectric conversion element unit PU1 is directly adjacent to the first-type photoelectric conversion element PD1 of the second photoelectric conversion element unit PU2. The first photoelectric conversion element unit PU1 is directly adjacent to the second photoelectric conversion element unit PU2. The first-type photoelectric conversion element PD1 is disposed in the center of the photoelectric conversion element group PDG.

[0129] For example, in the first photoelectric conversion element unit PU1, first-type photoelectric conversion elements PD1 are arranged in the third row and third column, and second-type photoelectric conversion elements PD2 are arranged in the remaining spaces. In the second photoelectric conversion element unit PU2, first-type photoelectric conversion elements PD1 are arranged in the third row and first column, and second-type photoelectric conversion elements PD2 are arranged in the remaining spaces. In the third pixel unit PU3, first-type photoelectric conversion elements PD1 are arranged in the first row and third column, and second-type photoelectric conversion elements PD2 are arranged in the remaining spaces. In the fourth pixel unit PU4, first-type photoelectric conversion elements PD1 are arranged in the first row and first column, and second-type photoelectric conversion elements PD2 are arranged in the remaining spaces.

[0130] For example, in the photoelectric conversion element group PDG, a first-type photoelectric conversion element PD1 is arranged in the third row and third column, a first-type photoelectric conversion element PD1 is arranged in the third row and fourth column, a first-type photoelectric conversion element PD1 is arranged in the fourth row and third column, and a first-type photoelectric conversion element PD1 is arranged in the fourth row and fourth column. Each of the first-type photoelectric conversion elements PD1 is arranged at an edge where the photoelectric conversion element units PU1 to PU4 meet. Each of the first-type photoelectric conversion elements PD1 is arranged in a middle portion of the photoelectric conversion element group PDG.

[0131] In one embodiment, the first pixels PX1 corresponding to the first-type photoelectric conversion elements PD1 included in the photoelectric conversion element group PDG are identical. The first pixels PX1 corresponding to the first-type photoelectric conversion elements PD1 included in the photoelectric conversion element units PU1 to PU4 all have the same type. Each of the first pixels PX1 corresponding to the first-type photoelectric conversion elements PD1 of the photoelectric conversion element group PDG may be at least one of a red (R) pixel, a green (G) pixel, a blue (B) pixel, a cyan (C) pixel, a yellow (Y) pixel, a magenta (M) pixel, a clear (CL) pixel, and a white (W) pixel.

[0132] For example, each of the first-type photoelectric conversion elements PD1 included in the photoelectric conversion element group PDG corresponds to a red (R) pixel. That is, the first-type photoelectric conversion element PD1 included in the first photoelectric conversion element unit PU1 corresponds to a red (R) pixel, the first-type photoelectric conversion element PD1 included in the second photoelectric conversion element unit PU2 corresponds to a red (R) pixel, the first-type photoelectric conversion element PD1 included in the third pixel unit PU3 corresponds to a red (R) pixel, and the first-type photoelectric conversion element PD1 included in the fourth pixel unit PU4 corresponds to a red (R) pixel.

[0133] In one embodiment, the first-type photoelectric conversion elements PD1 of the photoelectric conversion element group PDG may not share the reset transistor, drive transistor, or select transistor, and the first pixels PX1 corresponding to the first-type photoelectric conversion elements PD1 of each of the photoelectric conversion element units PU1 to PU4 each include a different reset transistor, drive transistor, and select transistor.

[0134] In one embodiment, the first-type photoelectric conversion elements PD1 of the photoelectric conversion element group PDG share a reset transistor, a drive transistor, and a selection transistor. The first-type photoelectric conversion elements PD1 of the photoelectric conversion element group PDG also share a floating diffusion region. In one embodiment, the first-type photoelectric conversion elements PD1 of the photoelectric conversion element group PDG further share a dual conversion transistor.

[0135] 11C, in one embodiment, the first pixels PX1 corresponding to the first-type photoelectric conversion elements PD1 included in the photoelectric conversion element group PDG are the same or different. The first pixels PX1 corresponding to the first-type photoelectric conversion elements PD1 included in the photoelectric conversion element units PU1 to PU4 are the same or different types. The photoelectric conversion element group PDG has four first-type photoelectric conversion elements PD1. The photoelectric conversion element group PDG includes a first-type photoelectric conversion element PD1 corresponding to one red (R) pixel, two first-type photoelectric conversion elements PD1 corresponding to two green (G) pixels, and one first-type photoelectric conversion element PD1 corresponding to one blue (B) pixel. The first pixels PX1 corresponding to the first-type photoelectric conversion elements PD1 of the photoelectric conversion element group PDG have an RGGB pixel structure. For example, the first-type photoelectric conversion element PD1 of the first photoelectric conversion element unit PU1 corresponds to a red (R) pixel, the first-type photoelectric conversion element PD1 of the second photoelectric conversion element unit PU2 corresponds to a green (G) pixel, the first-type photoelectric conversion element PD1 of the third pixel unit PU3 corresponds to a green (G) pixel, and the first-type photoelectric conversion element PD1 of the fourth pixel unit PU4 corresponds to a blue (B) pixel.

[0136] For example, the first pixel PX1 corresponding to the first-type photoelectric conversion element PD1 included in the photoelectric conversion element group PDG has one of the pixel structures RGGB, RCCC, RYYC, RGBC, and RGBW, although the scope of the present invention is not limited thereto, and the first pixel PX1 corresponding to the first-type photoelectric conversion element PD1 of the photoelectric conversion element group PDG includes at least one of a red (R) pixel, a green (G) pixel, a blue (B) pixel, a cyan (C) pixel, a yellow (Y) pixel, a magenta (M) pixel, a clear (CL) pixel, a white (W) pixel, or a combination thereof.

[0137] The above is a specific embodiment for carrying out the present invention. The present invention includes not only the above-described embodiment but also embodiments that can be simply modified or easily changed. The present invention also includes techniques that can be easily modified using the embodiment. Therefore, the scope of the present invention should not be limited to the above-described embodiment, but should be defined by the following claims as well as equivalents to the claims of the present invention. [Explanation of symbols]

[0138] 10 Image Processing Device 11 processors 100 Vision Sensor

Claims

1. a first semiconductor die including a plurality of photoelectric conversion element groups; a second semiconductor die including a dynamic vision sensor (DVS) pixel circuit, the second semiconductor die being stacked on the first semiconductor die using a copper-to-copper bonding method; Each of the plurality of photoelectric conversion element groups includes: a first-type photoelectric conversion element configured to output an electrical signal corresponding to the amount of light incident on the first-type photoelectric conversion element; a plurality of second-type photoelectric conversion elements; each of the plurality of second-type photoelectric conversion elements is configured to output a charge corresponding to an amount of light incident on the second-type photoelectric conversion element; the DVS pixel circuit is configured to output an event signal based on charges generated by the plurality of second-type photoelectric conversion elements; a total number of the second-type photoelectric conversion elements in each of the photoelectric conversion element groups being greater than a total number of the first-type photoelectric conversion elements;

2. a transfer transistor; a reset transistor; and each of the plurality of photoelectric conversion element groups further includes a driving transistor corresponding to the first type photoelectric conversion element; The vision sensor of claim 1 , wherein the transfer transistor, the reset transistor, and the drive transistor are disposed on the first semiconductor die.

3. 3. The vision sensor according to claim 2, wherein in each of the plurality of photoelectric conversion element groups, the total number of the plurality of second-type photoelectric conversion elements is at least twice the total number of the first-type photoelectric conversion elements.

4. The DVS pixel circuit comprises: a logarithmic amplifier coupled to the at least one second-type photoelectric conversion element; The vision sensor of claim 3 , further comprising: a feedback transistor coupled to the at least one second-type photoelectric conversion element.

5. 4. The vision sensor according to claim 3, wherein the relative positions of the first type photoelectric conversion elements with respect to the photoelectric conversion element group are the same in each of the plurality of photoelectric conversion element groups.

6. further comprising a third semiconductor die stacked on the second semiconductor die; The vision sensor of claim 5 , wherein the third semiconductor die includes DVS logic and an analog-to-digital converter.

7. Each of the plurality of photoelectric conversion element groups includes a plurality of photoelectric conversion elements arranged in N rows and M columns, 6. The vision sensor according to claim 5, wherein the first type photoelectric conversion element is arranged at one of four corners formed by an array of N rows and M columns, where N and M are integers.

8. Each of the plurality of photoelectric conversion element groups includes a plurality of photoelectric conversion elements arranged in N rows and M columns, 6. The vision sensor according to claim 5, wherein the first type photoelectric conversion elements are arranged in a center of an array arranged in N rows and M columns, where N and M are integers.

9. The vision sensor according to claim 6 , wherein the first type photoelectric conversion elements of the plurality of photoelectric conversion element groups share a reset transistor, a drive transistor, and a selection transistor.

10. a first semiconductor die including a first-type photoelectric conversion element and a second-type photoelectric conversion element; a second semiconductor die including a dynamic vision sensor (DVS) pixel circuit, a select transistor and a drive transistor corresponding to the first-type photoelectric conversion element; the first-type photoelectric conversion element is configured to output an electrical signal corresponding to an amount of light incident on the first-type photoelectric conversion element; the second-type photoelectric conversion element is configured to output a charge corresponding to an amount of light incident on the second-type photoelectric conversion element; the DVS pixel circuit is configured to output an event signal based on the charge generated by the second-type photoelectric conversion element; The first semiconductor die is bonded to the second semiconductor die by a copper-to-copper bond (Cu-to-Cu The wires are connected using the bonding method. A vision sensor, wherein the total number of the second type photoelectric conversion elements is greater than the total number of the first type photoelectric conversion elements.

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