Semiconductor adhesive film and semiconductor package using same

Abstract

The present specification relates to an adhesive film for semiconductors that exhibits excellent adhesive strength while easily adjusting the fillet and can prevent the problem of solder melting and fusing to a chip, and a semiconductor package using the same.

Description

[Technical field]

[0001] This specification claims the benefit of the filing date of Korean Patent Application No. 10-2022-0043420, filed with the Korean Intellectual Property Office on April 7, 2022, the entire contents of which are incorporated herein by reference. The present invention relates to an adhesive film for a semiconductor and a semiconductor package using the same. [Background technology]

[0002] In general, the manufacturing process of semiconductor chips includes a process of forming fine patterns on a wafer, polishing the wafer to meet the specifications of the final device, and packaging the wafer. The packaging process mentioned above includes a wafer inspection process to inspect semiconductor chips for defects; a dicing process to cut the wafer and separate it into individual chips; a die bonding process to attach the separated chips to a mounting plate of a circuit film or a lead frame; a wire bonding process to connect chip pads on the semiconductor chip to the circuit pattern of the circuit film or lead frame with electrical connection means such as wires; a molding process to surround the outside of the semiconductor chip with an encapsulant to protect the internal circuitry and other components; a trim process to cut the dam bars connecting the leads; a forming process to bend the leads into a desired shape; and a finished product inspection process to inspect the completed package for defects.

[0003] Recently, with the expanding trend of miniaturization, high functionality, and large capacity of electronic devices, the need for high density and high integration of semiconductor packages is rapidly increasing. As a result, the size of semiconductor chips is becoming larger and larger. In order to improve the integration level, stack packaging methods in which chips are stacked in multiple layers are gradually becoming more common.

[0004] Recently, semiconductors using through silicon vias (TSV) have been developed, which have the advantages of high density, low power consumption, high speed, and minimization of package thickness. Bonding between chips using through silicon vias is performed using the thermal compression bonding method, which applies pressure at a temperature of 200 to 300°C for 2 to 10 seconds.

[0005] Paste-type non-conductive paste (NCP) or non-conductive film (NCF) is used as the adhesive that fills the gaps between each TSV layer. Among these, NFC is a film-type underfill material that has the advantages of embeddability and process time and ease. However, in the case of NCF, fillets are inevitably generated during the compression process. If the fillet is discharged excessively, problems can occur such as the fillet flowing downward or rising upward in a structure where multiple chips are stacked.

[0006] In order to solve the above problems, there is currently a need to develop a semiconductor adhesive film that can effectively control the fillet. Summary of the Invention [Problem to be solved by the invention]

[0007] The present invention provides a semiconductor adhesive film and a semiconductor package that have excellent adhesive strength and can effectively control fillets that occur during a semiconductor packaging process. However, the problems to be solved by the present invention are not limited to the problems described above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0008] One embodiment of the present invention provides a semiconductor adhesive film comprising a first adhesive layer comprising a first adhesive composition including a first thermosetting resin, a first thermoplastic resin, and a first thermosetting agent, and a second adhesive layer provided on the first adhesive layer and comprising a second adhesive composition including a second thermosetting resin, a second thermoplastic resin, a second thermosetting agent, a photopolymerizable monomer having one or more photocurable functional groups, and a photoinitiator. Moreover, one embodiment of the present invention provides a semiconductor package including the semiconductor adhesive film. Effect of the Invention

[0009] The semiconductor adhesive film according to one embodiment of the present invention exhibits excellent adhesive strength, and is easy to control fillets that occur during the semiconductor packaging process, and can prevent the problem of solder melting and fusing to the chip. A semiconductor package according to an embodiment of the present invention can have excellent quality. The effects of the present invention are not limited to those described above, and effects not mentioned will be clearly understood by those skilled in the art from the present specification and the accompanying drawings. [Brief description of the drawings]

[0010] [Figure 1] 1 is a diagram showing a schematic diagram of a semiconductor adhesive film according to one embodiment of the present invention. [Diagram 2] 1 is a diagram showing a schematic diagram of a semiconductor adhesive film according to one embodiment of the present invention. [Diagram 3] 2A to 2C are diagrams illustrating a method for manufacturing a semiconductor package according to the first embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] In this specification, when a part "comprises" a certain component, this means that it can further include other components, not excluding other components, unless specifically stated to the contrary. Throughout this specification, when an element is said to be "on" another element, this includes not only when the element is in contact with the other element, but also when there is another element between the two elements.

[0012] Throughout this specification, the unit "parts by weight" can refer to the weight ratio between each component. Throughout this specification, "(meth)acrylate" is used generically to refer to acrylate and methacrylate.

[0013] Throughout this specification, terms including ordinal numbers, such as "first" and "second," are used to distinguish one component from another component, and are not limited by the ordinal number. For example, a first component may be named a second component, and similarly, a second component may be named a first component, within the scope of the invention. Throughout this specification, the term "solids" is used as a general term to refer to the total of all components in a composition excluding the solvent.

[0014] This specification will be explained in more detail below. One embodiment of the present invention provides a semiconductor adhesive film comprising a first adhesive layer comprising a first adhesive composition including a first thermosetting resin, a first thermoplastic resin, and a first thermosetting agent, and a second adhesive layer provided on the first adhesive layer and comprising a second adhesive composition including a second thermosetting resin, a second thermoplastic resin, a second thermosetting agent, a photopolymerizable monomer having one or more photocurable functional groups, and a photoinitiator.

[0015] The semiconductor adhesive film according to one embodiment of the present invention exhibits excellent adhesive strength, and is easy to control fillets that occur during semiconductor packaging, and can prevent the problem of solder melting and fusing to the chip. Specifically, the semiconductor adhesive film includes a first adhesive layer that is thermosetting and a second adhesive layer that is thermosetting and photosetting, thereby realizing excellent adhesive strength, appropriately controlling the amount of fillets that occur during semiconductor packaging, and effectively preventing the problem of solder melting at high temperature flowing and fusing to the chip.

[0016] The adhesive layer and adhesive composition contained in the semiconductor adhesive film according to one embodiment of the present invention will be described in detail below.

[0017] (1) First adhesive layer According to one embodiment of the present invention, the first adhesive layer can include the first adhesive composition. Specifically, the first adhesive layer can include a dried product (or a thermoset product) of the first adhesive composition. The first adhesive composition can include a first thermosetting resin, a first thermoplastic resin, and a first thermosetting agent. In addition, as described below, the first adhesive composition can further include a first inorganic filler, a first fluxing agent, and a first curing catalyst.

[0018] According to one embodiment of the present invention, the first thermosetting resin can include at least one of a solid epoxy resin and a liquid epoxy resin. The first thermosetting resin can react with a first thermosetting agent to exhibit heat resistance and mechanical strength.

[0019] According to one embodiment of the present invention, the epoxy resin may include at least one of cresol novolac epoxy resin, bisphenol F type epoxy resin, bisphenol F type novolac epoxy resin, bisphenol A type epoxy resin, bisphenol A type novolac epoxy resin, phenol novolac epoxy resin, tetrafunctional epoxy resin, biphenyl type epoxy resin, biphenyl type novolac epoxy resin, triphenol methane type epoxy resin, alkyl modified triphenol methane epoxy resin, naphthalene type epoxy resin, dicyclopentadiene type epoxy resin, dicyclopentadiene modified phenol type epoxy resin, glycidyl amine type epoxy resin, and alicyclic epoxy resin. When the first thermosetting resin includes the above-mentioned epoxy resin, the first adhesive composition can realize a semiconductor adhesive film having mechanical properties such as physical properties, heat resistance, and impact resistance suitable for a package of a multi-layered structure of a semiconductor chip.

[0020] According to one embodiment of the present invention, the epoxy resin may have an average epoxy equivalent of 100 g / eq to 1,000 g / eq. The average epoxy equivalent is determined based on the weight ratio and epoxy equivalent of each epoxy resin contained in the epoxy resin.

[0021] According to one embodiment of the present invention, the content of the first thermosetting resin may be 20 parts by weight or more and 40 parts by weight or less based on 100 parts by weight of the solid content of the first adhesive composition. In this case, the solid content of the first adhesive composition means all components except the solvent, specifically, the first thermosetting resin, the first thermoplastic resin, the first thermosetting agent, the first inorganic filler, the first fluxing agent, and the first curing catalyst. When the content of the first thermosetting resin is within the above-mentioned range, the first adhesive composition can realize a semiconductor adhesive film that ensures mechanical properties such as physical properties, heat resistance, and impact resistance suitable for a multi-layered package of semiconductor chips.

[0022] According to one embodiment of the present invention, the first thermoplastic resin may include at least one of polyimide-based resin, polyetherimide-based resin, polyesterimide-based resin, polyamide-based resin, polyethersulfone-based resin, polyetherketone-based resin, polyolefin-based resin, polyvinyl chloride-based resin, phenoxy-based resin, butadiene rubber, styrene-butadiene rubber, modified butadiene rubber, reactive butadiene-acrylonitrile copolymer rubber, and (meth)acrylate-based resin. By selecting the thermoplastic resin from the above, it is possible to increase the compatibility with the epoxy resin and reduce the stress generated in the semiconductor package.

[0023] According to one embodiment of the present invention, the first thermoplastic resin can include a (meth)acrylate resin having a glass transition temperature of -10°C to 30°C and a weight average molecular weight of 50,000 g / mol to 1,000,000 g / mol.

[0024] According to one embodiment of the present invention, the (meth)acrylate resin is an epoxy group-containing acrylic copolymer, and may contain glycidyl acrylate or glycidyl methacrylate in an amount of 1% by weight to 30% by weight, or 2% by weight to 28% by weight, or 2.5% by weight to 25% by weight based on the total weight. When the epoxy group content in the (meth)acrylate resin is within the above-mentioned range, the compatibility and adhesive strength with the epoxy resin may be excellent. In addition, the viscosity increase rate due to curing is appropriate, and the bonding and embedding of solder bumps are sufficiently performed in the thermal compression bonding process of semiconductor devices.

[0025] According to one embodiment of the present invention, the content of the first thermoplastic resin may be 5 parts by weight or more and 20 parts by weight or less based on 100 parts by weight of the solid content of the first adhesive composition. By adjusting the content of the first thermoplastic resin within the above range, it is possible to increase the compatibility with the first thermosetting resin and effectively reduce stress that may occur in a semiconductor package.

[0026] The first thermoplastic resin may contain two kinds of (meth)acrylate resins. That is, the first thermoplastic resin may contain a first (meth)acrylate resin and a second (meth)acrylate resin. The first (meth)acrylate resin and the second (meth)acrylate resin may have different weight average molecular weights. For example, the weight average molecular weight of the first (meth)acrylate resin may be 50,000 g / mol to 500,000 g / mol, and the weight average molecular weight of the second (meth)acrylate resin may be 550,000 g / mol to 1,000,000 g / mol. The weight ratio of the first (meth)acrylate resin to the second (meth)acrylate resin contained in the first thermoplastic resin may be 0.1:10 to 10:0.1. When the weight ratio of the first (meth)acrylate resin to the second (meth)acrylate resin is within the above-mentioned range, the compatibility with the first thermosetting resin can be increased, and stress that may occur in the semiconductor package can be effectively reduced.

[0027] According to one embodiment of the present invention, the first heat curing agent may include at least one of an amine compound, an acid anhydride compound, an amide compound, and a phenol compound. Specifically, the amine compound may be one selected from the group consisting of diaminodiphenylmethane, diethylenetriamine, triethylenetetraamine, diaminodiphenylsulfone, isophoronediamine, or a combination thereof. The acid anhydride compound may be one selected from the group consisting of phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, maleic anhydride, tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylnadic anhydride, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, or a combination thereof. The amide compound may be a polyamide resin synthesized from dicyandiamide, a dimer of linoleic acid, and ethylenediamine. The phenolic compound may be a polyhydric phenol such as bisphenol A, bisphenol F, bisphenol S, fluorene bisphenol, or terpene diphenol; a phenolic resin obtained by condensation of a phenol with an aldehyde, a ketone, or a diene; a modified product of a phenol and / or a phenolic resin; a halogenated phenol such as tetrabromobisphenol A or a brominated phenolic resin; other imidazoles, BF3-amine complexes, or guanidine derivatives. The phenolic compound may also include at least one of a bisphenol A novolac resin and a cresol novolac resin. By selecting the curing agent from the above, the degree of curing of the epoxy resin can be adjusted while improving the mechanical properties of the first adhesive layer.

[0028] According to one embodiment of the present invention, the first thermal curing agent may contain a phenolic resin having a softening point of 60° C. or more. Specifically, the softening point of the phenolic resin may be 60° C. or more and 150° C. or less, 65° C. or more and 145° C. or less, or 70° C. or more and 140° C. or less. By containing a phenolic resin having a softening point within the above range, the heat resistance, strength, and adhesiveness of the first adhesive composition after curing can be improved, and voids can be prevented from being generated inside the adhesive layer during the semiconductor manufacturing process.

[0029] According to one embodiment of the present invention, the first thermal curing agent may include a novolac phenolic resin. The novolac phenolic resin has a chemical structure in which a ring is located between reactive functional groups. Due to such structural characteristics, the novolac phenolic resin can further reduce the hygroscopicity of the adhesive layer, can further increase stability in a high-temperature compression process, and can play a role in preventing peeling of the first adhesive layer.

[0030] According to one embodiment of the present invention, the content of the first heat curing agent may be 7.5 parts by weight or more and 17.5 parts by weight or less based on 100 parts by weight of the solid content of the first adhesive composition. By adjusting the content of the first heat curing agent within the above range, the heat resistance, strength, and adhesiveness of the first adhesive composition after curing can be improved.

[0031] According to one embodiment of the present invention, the first adhesive composition may further include an additive including at least one of a first inorganic filler, a first curing catalyst, and a first fluxing agent. According to one embodiment of the present invention, the first inorganic filler may include at least one of alumina, silica, barium sulfate, magnesium hydroxide, magnesium carbonate, magnesium silicate, magnesium oxide, calcium silicate, calcium carbonate, calcium oxide, aluminum hydroxide, aluminum nitride, and aluminum borate.

[0032] According to one embodiment of the present invention, the first inorganic filler may be an ion adsorbent capable of adsorbing ionic impurities to improve reliability. Specifically, the ion adsorbent may be one or more inorganic particles selected from the group consisting of magnesium-based particles such as magnesium hydroxide, magnesium carbonate, magnesium silicate, and magnesium oxide, calcium silicate, calcium carbonate, calcium oxide, alumina, aluminum hydroxide, aluminum nitride, aluminum borate whiskers, zirconium-based inorganic materials, and antimony bismuth-based inorganic materials.

[0033] According to one embodiment of the present invention, the particle size (based on the longest outer diameter) of the first inorganic filler may be 0.01 to 10 μm, or 0.02 to 5.0 μm, or 0.03 to 2.0 μm. By adjusting the particle size of the first inorganic filler within the above-mentioned range, it is possible to prevent excessive aggregation of the first adhesive composition, and to prevent damage to the semiconductor circuit and deterioration of the adhesive property of the semiconductor adhesive film caused by the inorganic filler.

[0034] In addition, the first inorganic filler may include two or more inorganic fillers having different particle sizes. That is, the first inorganic filler may include a 1-1 inorganic filler having a particle size of 10 nm to 300 nm and a 1-2 inorganic filler having a particle size of 310 nm to 10,000 nm. At this time, the weight ratio of the 1-1 inorganic filler and the 1-2 inorganic filler contained in the first inorganic filler may be 0.1:10 to 10:0.1. When the weight ratio of the 1-1 inorganic filler and the 1-2 inorganic filler is within the above-mentioned range, excessive aggregation of the first adhesive composition can be prevented, and damage to the semiconductor circuit and deterioration of the adhesive property of the semiconductor adhesive film caused by the inorganic filler can be prevented.

[0035] According to one embodiment of the present invention, the content of the first inorganic filler may be 25 parts by weight or more and 70 parts by weight or less based on 100 parts by weight of the solid content of the first adhesive composition. By adjusting the content of the first inorganic filler within the above-mentioned range, it is possible to prevent excessive aggregation of the first adhesive composition, and to prevent damage to the semiconductor circuit and deterioration of the adhesiveness of the semiconductor adhesive film caused by the inorganic filler.

[0036] According to one embodiment of the present invention, the first curing catalyst may include one selected from the group consisting of phosphorus-based compounds, boron-based compounds, phosphorus-boron-based compounds, imidazole-based compounds, and combinations thereof. By selecting the first curing catalyst from the above, the curing of the first adhesive composition can be promoted.

[0037] According to one embodiment of the present invention, the content of the first curing catalyst may be 1 part by weight or more and 3 parts by weight or less based on 100 parts by weight of the solid content of the first adhesive composition. By adjusting the content of the first curing catalyst within the above range, the curing of the first adhesive composition can be promoted.

[0038] According to one embodiment of the present invention, the functional group of the first fluxing agent may be a polar functional group. By selecting the functional group of the first fluxing agent as a polar functional group, it is possible to effectively control the fillet, which can contribute to improving the quality of the semiconductor adhesive film produced.

[0039] According to one embodiment of the present invention, the polar functional group may be a carboxy group. As described above, by selecting the polar functional group as a carboxy group, it is possible to effectively control the fillet, which can contribute to improving the quality of the semiconductor adhesive film produced.

[0040] According to one embodiment of the present invention, the content of the first fluxing agent may be 1 part by weight or more and 5 parts by weight or less based on 100 parts by weight of the solid content of the first adhesive composition. By adjusting the content of the first fluxing agent within the above range, it is possible to effectively control fillets, which can contribute to improving the quality of the semiconductor adhesive film produced.

[0041] According to one embodiment of the present invention, the first adhesive composition may further contain a leveling agent, a dispersant or a solvent, if necessary.

[0042] According to one embodiment of the present invention, the solvent can be used to dissolve the first adhesive composition and to give the composition a suitable degree of viscosity for application. Specific examples of the solvent include ketones such as methyl ethyl ketone and cyclohexanone; aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene; glycol ethers (cellosolves) such as ethylene glycol monoethyl ether, ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, dipropylene glycol diethyl ether, and triethylene glycol monoethyl ether; acetates such as ethyl acetate, butyl acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, and dipropylene glycol monomethyl ether acetate; alcohols such as ethanol, propanol, ethylene glycol, propylene glycol, and carbitol; aliphatic hydrocarbons such as octane and decane; petroleum solvents such as petroleum ether, petroleum naphtha, hydrogenated petroleum naphtha, and solvent naphtha; and amides such as dimethylacetamide and dimethylformamide (DMF). These solvents can be used alone or in combination of two or more.

[0043] The solvent can be used in an appropriate amount in consideration of the dispersibility, solubility, or viscosity of the first adhesive composition, and for example, the first adhesive composition can contain 0.1 wt % to 70 wt %, or 1 wt % to 65 wt % of the solvent. When the content of the solvent is within the above range, the coating property of the first adhesive composition can be improved, and the first adhesive composition can be smoothly dried, thereby reducing stickiness of the produced film.

[0044] Meanwhile, the method for preparing the first adhesive composition is not particularly limited, and the above-mentioned components may be mixed in various ways, for example, by using a mixer.

[0045] According to one embodiment of the present invention, the thickness of the first adhesive layer may be 1 μm or more and 100 μm or less. Specifically, the thickness of the semiconductor adhesive film may be 1 μm or more and 100 μm or less, 1 μm or more and 75 μm or less, 1 μm or more and 50 μm or less, 10 μm or more and 75 μm or less, 10 μm or more and 50 μm or less, 25 μm or more and 100 μm or less, 50 μm or more and 100 μm or less, 15 μm or more and 70 μm or less, or 20 μm or more and 50 μm or less.

[0046] (2)Second adhesive layer According to one embodiment of the present invention, the second adhesive layer may include the second adhesive composition. Specifically, the second adhesive layer may include a dried product (or a thermoset product) of the second adhesive composition. The second adhesive composition may include a second thermosetting resin, a second thermoplastic resin, a second thermosetting agent, a photopolymerizable monomer having one or more photocurable functional groups, and a photoinitiator. The second adhesive layer may be additionally photocured when irradiated with light as described below, by including the photopolymerizable monomer having one or more photocurable functional groups and the photoinitiator. In addition, the second adhesive composition may further include a second inorganic filler, a second fluxing agent, and a second curing catalyst as described below.

[0047] According to one embodiment of the present invention, the second thermosetting resin may include at least one of a solid epoxy resin and a liquid epoxy resin. The second thermosetting resin may react with a second thermosetting agent to exhibit heat resistance and mechanical strength. The second thermosetting resin may be the same as or different from the first thermosetting resin described above.

[0048] According to one embodiment of the present invention, the epoxy resin may include at least one of cresol novolac epoxy resin, bisphenol F type epoxy resin, bisphenol F type novolac epoxy resin, bisphenol A type epoxy resin, bisphenol A type novolac epoxy resin, phenol novolac epoxy resin, tetrafunctional epoxy resin, biphenyl type epoxy resin, biphenyl type novolac epoxy resin, triphenol methane type epoxy resin, alkyl modified triphenol methane epoxy resin, naphthalene type epoxy resin, dicyclopentadiene type epoxy resin, dicyclopentadiene modified phenol type epoxy resin, glycidyl amine type epoxy resin, and alicyclic epoxy resin. When the second thermosetting resin includes the above-mentioned epoxy resin, the second adhesive composition can realize a semiconductor adhesive film having mechanical properties such as physical properties, heat resistance, and impact resistance suitable for a package of a multi-layered structure of a semiconductor chip.

[0049] According to one embodiment of the present invention, the epoxy resin may have an average epoxy equivalent of 100 g / eq to 1,000 g / eq. The average epoxy equivalent is determined based on the weight ratio and epoxy equivalent of each epoxy resin contained in the epoxy resin.

[0050] According to one embodiment of the present invention, the content of the second thermosetting resin may be 20 parts by weight or more and 40 parts by weight or less based on 100 parts by weight of the solid content of the second adhesive composition. In this case, the solid content of the second adhesive composition means all components except the solvent, specifically, the second thermosetting resin, the second thermoplastic resin, the second thermosetting agent, the second inorganic filler, the second fluxing agent, the second curing catalyst, the photopolymerizable monomer, and the photoinitiator. When the content of the second thermosetting resin is within the above-mentioned range, the second adhesive composition can realize a semiconductor adhesive film having mechanical properties such as physical properties, heat resistance, and impact resistance suitable for a multi-layered package of semiconductor chips.

[0051] According to one embodiment of the present invention, the second thermoplastic resin may include at least one of polyimide-based resin, polyetherimide-based resin, polyesterimide-based resin, polyamide-based resin, polyethersulfone-based resin, polyetherketone-based resin, polyolefin-based resin, polyvinyl chloride-based resin, phenoxy-based resin, butadiene rubber, styrene-butadiene rubber, modified butadiene rubber, reactive butadiene acrylonitrile copolymer rubber, and (meth)acrylate-based resin. By selecting the second thermoplastic resin from the above, it is possible to increase the compatibility with epoxy resin and reduce stress generated in the semiconductor package. The second thermoplastic resin may be the same as or different from the first thermoplastic resin described above.

[0052] According to one embodiment of the present invention, the second thermoplastic resin can include a (meth)acrylate resin having a glass transition temperature of -10°C to 30°C and a weight average molecular weight of 50,000 g / mol to 1,000,000 g / mol.

[0053] According to one embodiment of the present invention, the (meth)acrylate resin is an epoxy group-containing acrylic copolymer, and may contain glycidyl acrylate or glycidyl methacrylate in an amount of 1% by weight to 30% by weight, or 2% by weight to 28% by weight, or 2.5% by weight to 25% by weight based on the total weight. When the epoxy group content in the (meth)acrylate resin is within the above-mentioned range, the compatibility and adhesive strength with the epoxy resin may be excellent. In addition, the viscosity increase rate due to curing is appropriate, and the bonding and embedding of solder bumps are sufficiently performed in the thermal compression bonding process of semiconductor devices.

[0054] According to one embodiment of the present invention, the content of the second thermoplastic resin may be 5 parts by weight or more and 20 parts by weight or less based on 100 parts by weight of the solid content of the second adhesive composition. By adjusting the content of the second thermoplastic resin within the above range, the compatibility with the second thermosetting resin can be increased, and stress that may occur in the semiconductor package can be effectively reduced.

[0055] The second thermoplastic resin may contain two kinds of (meth)acrylate resins. That is, the second thermoplastic resin may contain a first (meth)acrylate resin and a second (meth)acrylate resin. The first (meth)acrylate resin and the second (meth)acrylate resin may have different weight average molecular weights. For example, the weight average molecular weight of the first (meth)acrylate resin may be 50,000 g / mol to 500,000 g / mol, and the weight average molecular weight of the second (meth)acrylate resin may be 550,000 g / mol to 1,000,000 g / mol. The weight ratio of the first (meth)acrylate resin to the second (meth)acrylate resin contained in the second thermoplastic resin may be 0.1:10 to 10:0.1. When the weight ratio of the first (meth)acrylate resin to the second (meth)acrylate resin is within the above-mentioned range, the compatibility with the second thermosetting resin can be increased, and stress that may occur in the semiconductor package can be effectively reduced.

[0056] According to one embodiment of the present invention, the second heat curing agent may include at least one of an amine compound, an acid anhydride compound, an amide compound, and a phenol compound. Specifically, the amine compound may be one selected from the group consisting of diaminodiphenylmethane, diethylenetriamine, triethylenetetraamine, diaminodiphenylsulfone, isophoronediamine, or a combination thereof. The acid anhydride compound may be one selected from the group consisting of phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, maleic anhydride, tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylnadic anhydride, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, or a combination thereof. The amide compound may be a polyamide resin synthesized from dicyandiamide, a dimer of linoleic acid, and ethylenediamine. The phenolic compound may be a polyhydric phenol such as bisphenol A, bisphenol F, bisphenol S, fluorene bisphenol, or terpene diphenol; a phenolic resin obtained by condensation of a phenol with an aldehyde, a ketone, or a diene; a modified product of a phenol and / or a phenolic resin; a halogenated phenol such as tetrabromobisphenol A or a brominated phenolic resin; other imidazoles, BF3-amine complexes, or guanidine derivatives. The phenolic compound may also include at least one of a bisphenol A novolac resin and a cresol novolac resin. By selecting the curing agent from the above, the degree of curing of the epoxy resin can be adjusted while improving the mechanical properties of the second adhesive layer. The second heat curing agent may be the same as or different from the first heat curing agent described above.

[0057] According to one embodiment of the present invention, the second thermal curing agent may contain a phenolic resin having a softening point of 60° C. or more. Specifically, the softening point of the phenolic resin may be 60° C. or more and 150° C. or less, 65° C. or more and 145° C. or less, or 70° C. or more and 140° C. or less. By containing a phenolic resin having a softening point within the above range, the heat resistance, strength, and adhesiveness of the second adhesive composition after curing can be improved, and voids can be prevented from being generated inside the adhesive layer during the semiconductor manufacturing process.

[0058] According to one embodiment of the present invention, the second thermal curing agent may include a novolac phenolic resin. The novolac phenolic resin has a chemical structure in which a ring is located between reactive functional groups. Due to such structural characteristics, the novolac phenolic resin can further reduce the hygroscopicity of the adhesive layer, can further increase stability in a high-temperature compression process, and can play a role in preventing peeling of the adhesive layer.

[0059] According to one embodiment of the present invention, the content of the second heat curing agent may be 7.5 parts by weight or more and 17.5 parts by weight or less based on 100 parts by weight of the solid content of the second adhesive composition. By adjusting the content of the second heat curing agent within the above range, the heat resistance, strength and adhesiveness of the second adhesive composition after curing can be improved.

[0060] According to one embodiment of the present invention, the photopolymerizable monomer may contain one or more photocurable functional groups. According to one embodiment of the present invention, the photopolymerizable monomer may contain a (meth)acrylate-based compound containing one or more photocurable functional groups. Specifically, the photopolymerizable monomer may contain at least one of a hydroxyl group-containing (meth)acrylate-based compound, a water-soluble (meth)acrylate-based compound, a polyester (meth)acrylate-based compound, a polyurethane (meth)acrylate-based compound, an epoxy (meth)acrylate-based compound, and a caprolactone-modified (meth)acrylate-based compound.

[0061] More specifically, hydroxyl group-containing (meth)acrylate compounds such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, pentaerythritol tri(meth)acrylate, and dipentaerythritol penta(meth)acrylate; water-soluble (meth)acrylate compounds such as polyethylene glycol di(meth)acrylate and polypropylene glycol di(meth)acrylate; polyfunctional polyester (meth)acrylate compounds of polyhydric alcohols such as trimethylolpropane tri(meth)acrylate, trimethylolpropane ethoxylate tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, and dipentaerythritol hexa(meth)acrylate; ethylene oxide adducts of polyfunctional alcohols such as trimethylolpropane or hydrogenated bisphenol A, or polyhydric phenols such as bisphenol A and biphenol. and / or propylene oxide adduct (meth)acrylate compounds; polyfunctional or monofunctional polyurethane (meth)acrylate compounds which are isocyanate-modified products of the hydroxyl group-containing (meth)acrylate; epoxy (meth)acrylate compounds which are (meth)acrylic acid adducts of bisphenol A diglycidyl ether, hydrogenated bisphenol A diglycidyl ether, or phenol novolac epoxy resin; and photosensitive (meth)acrylate compounds such as caprolactone-modified ditrimethylolpropane tetra(meth)acrylate, ε-caprolactone-modified dipentaerythritol (meth)acrylate, or caprolactone-modified hydroxypivalic acid neopentyl glycol ester di(meth)acrylate. These compounds may be used alone or in combination of two or more. The photopolymerizable monomer may also include at least one of trimethylolpropane ethoxylate triacrylate and dipentaerythritol hexaacrylate.

[0062] According to one embodiment of the present invention, the content of the photopolymerizable monomer may be 0.5 parts by weight or more and 5 parts by weight or less based on 100 parts by weight of the solid content of the second adhesive composition. When the photopolymerizable monomer is contained in the above range, a semiconductor adhesive film that shows excellent adhesive strength and is easy to adjust the fillet can be prepared.

[0063] According to one embodiment of the invention, the photoinitiator serves to initiate the radical photocuring of the second adhesive composition. As the photoinitiator, known ones can be used, and the following substances can be used: benzoin and its alkyl ethers such as benzoin, benzoin methyl ether, and benzoin ethyl ether; acetophenones such as acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 1,1-dichloroacetophenone, and 4-(1-t-butyldioxy-1-methylethyl)acetophenone; anthraquinones such as 2-methylanthraquinone, 2-amylanthraquinone, 2-t-butylanthraquinone, and 1-chloroanthraquinone; thioxanthones such as 2,4-dimethylthioxanthone, 2,4-diisopropylthioxanthone, and 2-chlorothioxanthone; ketals such as acetophenone dimethyl ketal and benzyl dimethyl ketal; and benzophenones such as benzophenone, 4-(1-t-butyldioxy-1-methylethyl)benzophenone, and 3,3',4,4'-tetrakis(t-butyldioxycarbonyl)benzophenone. In addition, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinopropanone-1,2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one, 2-(dimethylamino)-2-[(4-methylphenyl)methyl]-1-[4-(4-morpholinyl)phenyl]-1-butanone, N,N-dimethylaminoacetophenone (commercially available products include Irgacure (registered trademark) 907, Irgacure 369, and Irgaki, products of Chiba Specialty Chemicals (now Chiba Japan)) Examples of preferred photoinitiators include α-aminoacetophenones such as Cure 379, and acylphosphine oxides such as 2,4,6-trimethylbenzoyldiphenylphosphine oxide, bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide, and bis(2,6-dimethoxybenzoyl)-2,4,4-trimethyl-pentylphosphine oxide (commercially available products include Lucirin (registered trademark) TPO, a product of BASF, and Irgacure 819, a product of Ciba Specialty Chemicals).

[0064] In addition, preferred photoinitiators include oxime esters. Specific examples of oxime esters include 2-(acetyloxyiminomethyl)thioxanthen-9-one, (1,2-octanedione, 1-[4-(phenylthio)phenyl]-, 2-(O-benzoyloxime)), (ethanone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-, 1-(O-acetyloxime)). Commercially available products include GGI-325, Irgacure OXE01, Irgacure OXE02, N-1919, and Darocur TPO, both products of Ciba Specialty Chemicals. When the photoinitiator of the above type is included, a semiconductor adhesive film that exhibits excellent adhesive strength and is easy to adjust the fillet can be produced.

[0065] According to one embodiment of the present invention, the content of the photoinitiator may be 0.5 parts by weight or more and 5 parts by weight or less based on 100 parts by weight of the solid content of the second adhesive composition. When the photoinitiator is contained in the above-mentioned range, a semiconductor adhesive film that shows excellent adhesive strength and is easy to adjust the fillet can be produced. In addition, when the content of the photoinitiator is within the above-mentioned range, the second adhesive layer can be stably photocured when irradiated with light.

[0066] According to one embodiment of the present invention, the weight ratio of the photoinitiator to the second thermal curing agent may be 1:0.5 or more and 1:1000 or less. Specifically, the weight ratio of the photoinitiator to the second thermal curing agent may be 1:0.5 or more and 1:50 or less, 1:0.5 or more, 1:1 or more, 1:5 or more, 1:10 or more, 1:20 or more, 1:30 or more, 1:50 or more, or 1:100 or more. Specifically, the weight ratio of the photoinitiator to the second thermal curing agent may be 1:1000 or less, 1:900 or less, 1:800 or less, 1:700 or less, 1:600 ​​or less, or 1:500 or less. When the weight ratio of the photoinitiator to the second thermal curing agent has a value within the above-mentioned range, the second adhesive composition can stably form a solid second adhesive layer by heat, and the second adhesive layer can be stably photocured by light irradiation. As a result, the semiconductor adhesive film can effectively control fillets that occur during a semiconductor packaging process while exhibiting excellent adhesive strength.

[0067] According to one embodiment of the present invention, the second adhesive composition may further include an additive including at least one of a second inorganic filler, a second curing catalyst, and a second fluxing agent.

[0068] According to one embodiment of the present invention, the second inorganic filler may include at least one of alumina, silica, barium sulfate, magnesium hydroxide, magnesium carbonate, magnesium silicate, magnesium oxide, calcium silicate, calcium carbonate, calcium oxide, aluminum hydroxide, aluminum nitride, and aluminum borate. The second inorganic filler may be the same as or different from the first inorganic filler described above.

[0069] According to one embodiment of the present invention, the second inorganic filler may be an ion adsorbent capable of adsorbing ionic impurities to improve reliability. Specifically, the ion adsorbent may be one or more inorganic particles selected from the group consisting of magnesium-based particles such as magnesium hydroxide, magnesium carbonate, magnesium silicate, and magnesium oxide, calcium silicate, calcium carbonate, calcium oxide, alumina, aluminum hydroxide, aluminum nitride, aluminum borate whiskers, zirconium-based inorganic materials, and antimony bismuth-based inorganic materials.

[0070] According to one embodiment of the present invention, the particle size (based on the longest outer diameter) of the second inorganic filler may be 0.01 to 10 μm, or 0.02 to 5.0 μm, or 0.03 to 2.0 μm. By adjusting the particle size of the second inorganic filler within the above-mentioned range, excessive aggregation of the second adhesive composition can be prevented, and damage to the semiconductor circuit and deterioration of the adhesive property of the semiconductor adhesive film caused by the inorganic filler can be prevented.

[0071] In addition, the second inorganic filler may include two or more inorganic fillers having different particle sizes. That is, the second inorganic filler may include a 2-1 inorganic filler having a particle size of 10 nm to 300 nm and a 2-2 inorganic filler having a particle size of 310 nm to 10,000 nm. At this time, the weight ratio of the 2-1 inorganic filler and the 2-2 inorganic filler contained in the second inorganic filler may be 0.1:10 to 10:0.1. When the weight ratio of the 2-1 inorganic filler and the 2-2 inorganic filler is within the above-mentioned range, excessive aggregation of the second adhesive composition can be prevented, and damage to the semiconductor circuit caused by the inorganic filler and a decrease in the adhesiveness of the semiconductor adhesive film can be prevented.

[0072] According to one embodiment of the present invention, the content of the second inorganic filler may be 25 parts by weight or more and 70 parts by weight or less based on 100 parts by weight of the solid content of the second adhesive composition. By adjusting the content of the second inorganic filler within the above-mentioned range, it is possible to prevent excessive aggregation of the second adhesive composition, and to prevent damage to the semiconductor circuit and deterioration of the adhesiveness of the semiconductor adhesive film caused by the inorganic filler.

[0073] According to one embodiment of the present invention, the second curing catalyst may include one selected from the group consisting of phosphorus-based compounds, boron-based compounds, phosphorus-boron-based compounds, imidazole-based compounds, and combinations thereof. By selecting a curing catalyst from the above, the curing of the second adhesive composition can be accelerated. The second curing catalyst may be the same as or different from the first curing catalyst described above.

[0074] According to one embodiment of the present invention, the content of the second curing catalyst may be 1 part by weight or more and 3 parts by weight or less based on 100 parts by weight of the solid content of the second adhesive composition. By adjusting the content of the second curing catalyst within the above range, the curing of the second adhesive composition can be promoted.

[0075] According to one embodiment of the present invention, the functional group of the second fluxing agent may be a polar functional group. By selecting the functional group of the second fluxing agent as a polar functional group, it is possible to effectively control the fillet, which can contribute to improving the quality of the semiconductor bonding film to be manufactured. The second fluxing agent may be the same as or different from the first fluxing agent described above.

[0076] According to one embodiment of the present invention, the polar functional group may be a carboxy group. As described above, by selecting the polar functional group as a carboxy group, it is possible to effectively control the fillet, which can contribute to improving the quality of the semiconductor adhesive film produced.

[0077] According to one embodiment of the present invention, the content of the second fluxing agent may be 1 part by weight or more and 5 parts by weight or less based on 100 parts by weight of the solid content of the second adhesive composition. By adjusting the content of the second fluxing agent within the above range, it is possible to effectively control fillets, which can contribute to improving the quality of the semiconductor adhesive film produced.

[0078] According to one embodiment of the present invention, the second adhesive composition may further contain a leveling agent, a dispersant or a solvent, if necessary.

[0079] According to one embodiment of the present invention, the solvent can be used to dissolve the second adhesive composition and to give the composition a suitable degree of viscosity for application. Specific examples of the solvent include ketones such as methyl ethyl ketone and cyclohexanone; aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene; glycol ethers (cellosolves) such as ethylene glycol monoethyl ether, ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, dipropylene glycol diethyl ether, and triethylene glycol monoethyl ether; acetates such as ethyl acetate, butyl acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, and dipropylene glycol monomethyl ether acetate; alcohols such as ethanol, propanol, ethylene glycol, propylene glycol, and carbitol; aliphatic hydrocarbons such as octane and decane; petroleum solvents such as petroleum ether, petroleum naphtha, hydrogenated petroleum naphtha, and solvent naphtha; and amides such as dimethylacetamide and dimethylformamide (DMF). These solvents can be used alone or in combination of two or more.

[0080] The solvent can be used in an appropriate amount in consideration of the dispersibility, solubility, or viscosity of the second adhesive composition, and for example, the second adhesive composition can contain 0.1 wt % to 70 wt %, or 1 wt % to 65 wt % of the solvent. When the content of the solvent is within the above range, the coatability of the second adhesive composition can be improved, and the second adhesive composition can be smoothly dried, thereby reducing stickiness of the produced film.

[0081] Meanwhile, the method for preparing the second adhesive composition is not particularly limited, and the above-mentioned components may be mixed in various ways, for example, by using a mixer.

[0082] According to one embodiment of the present invention, the thickness of the second adhesive layer may be 1 μm or more and 100 μm or less. Specifically, the thickness of the semiconductor adhesive film may be 1 μm or more and 100 μm or less, 1 μm or more and 75 μm or less, 1 μm or more and 50 μm or less, 10 μm or more and 75 μm or less, 10 μm or more and 50 μm or less, 25 μm or more and 100 μm or less, 50 μm or more and 100 μm or less, 15 μm or more and 70 μm or less, or 20 μm or more and 50 μm or less.

[0083] According to one embodiment of the present invention, the semiconductor adhesive film may further include a release film, and the first adhesive layer may be provided on the release film. FIG. 1 is a diagram showing a semiconductor adhesive film according to one embodiment of the present invention. Referring to FIG. 1, a semiconductor adhesive film 100 according to one embodiment of the present invention may include a release film 30, a first adhesive layer 10 provided on one side of the release film 30, and a second adhesive layer 20 provided on one side of the first adhesive layer 10.

[0084] That is, the adhesive film for semiconductor may have a structure in which the release film 30, the first adhesive layer 10, and the second adhesive layer 20 are laminated in this order. When the adhesive film for semiconductor has a laminated structure in this order, it is easy to control fillets that occur during semiconductor packaging, and it is possible to prevent a problem in which the solder melts and fuses to the chip, thereby effectively improving quality reliability.

[0085] According to one embodiment of the present invention, the semiconductor adhesive film may further include a release film, and the second adhesive layer may be provided on the release film. FIG. 2 is a diagram showing a semiconductor adhesive film according to one embodiment of the present invention. Referring to FIG. 2, a semiconductor adhesive film 100 according to one embodiment of the present invention may include a release film 30, a second adhesive layer 20 provided on one side of the release film 30, and a first adhesive layer 10 provided on one side of the second adhesive layer 20. That is, the semiconductor adhesive film 100 may have a structure in which the release film 30, the second adhesive layer 20, and the first adhesive layer 10 are laminated in order.

[0086] 1 and 2, a semiconductor adhesive film 100 includes a first adhesive layer 10 and a second adhesive layer 20, and may additionally include a release film 30.

[0087] According to one embodiment of the present invention, the adhesive film for semiconductor refers to a film including a first adhesive layer obtained by applying the first adhesive composition described above and drying or heat curing process, and a second adhesive layer obtained by applying the second adhesive composition described above on the first adhesive layer and drying or heat curing process, and the polymer included in the adhesive film for semiconductor can include a reaction product obtained by a crosslinking reaction of components included in the first adhesive composition or the second adhesive composition. In addition, by an additional curing process of irradiating the adhesive film for semiconductor including the first adhesive layer and the second adhesive layer with light to photo-cure, fillets can be effectively controlled, and a high-quality adhesive film for semiconductor can be easily manufactured.

[0088] In the coating step, a conventional method and device known to be usable for coating the first adhesive composition or the second adhesive composition may be used. For example, the first adhesive composition or the second adhesive composition may be coated on a substrate film as is or after diluting in an appropriate organic solvent using a comma coater, blade coater, lip coater, rod coater, squeeze coater, reverse coater, transfer roll coater, gravure coater, spray coater, or the like, and then dried.

[0089] According to one embodiment of the present invention, the drying temperature may be 50° C. to 200° C. Specifically, the drying temperature may be 60° C. to 170° C., or 70° C. to 150° C. Furthermore, the drying time may be 2 minutes to 30 minutes. Specifically, the drying time may be 2.5 minutes to 25 minutes, 3 minutes to 20 minutes, or 3.5 minutes to 15 minutes.

[0090] According to one embodiment of the present invention, the first adhesive layer and the second adhesive layer may have different melt viscosities after the semiconductor adhesive film is irradiated with light. When the first adhesive layer and the second adhesive layer have different melt viscosities, a fillet can be effectively controlled by an additional curing process of irradiating light and curing, and a semiconductor adhesive film with excellent quality can be easily manufactured.

[0091] According to one embodiment of the present invention, the melt viscosity of the first adhesive layer may be 100 to 2,000 Pa·s, and the melt viscosity of the second adhesive layer may be 200 to 5,000 Pa·s. In this case, the melt viscosity of the second adhesive layer is measured after exposure to 1000 mJ. When the melt viscosities of the first adhesive layer and the second adhesive layer are within the above-mentioned ranges, fillets can be effectively controlled by an additional curing process of photocuring by irradiating light, and a high-quality semiconductor adhesive film can be easily manufactured.

[0092] According to one embodiment of the present invention, the thickness ratio of the first adhesive layer to the second adhesive layer may be 1:9 to 9:1. Specifically, the thickness ratio of the first adhesive layer to the second adhesive layer may be 1:7 to 7:1, 1:5 to 5:1, or 1:3 to 3:1. When the thickness ratio is within the above range, the adhesive strength of the semiconductor adhesive film to be manufactured may be effectively improved, and the fillet may be easily adjusted.

[0093] According to one embodiment of the present invention, the release film for supporting the semiconductor adhesive film is one or more plastic films such as polyethylene terephthalate film, polytetrafluoroethylene film, polyethylene film, polypropylene film, polybutene film, polybutadiene film, vinyl chloride copolymer film or polyimide film.

[0094] According to one embodiment of the present invention, the surface of the release film may be release-treated with one or more of alkyd-based, silicone-based, fluorine-based, unsaturated ester-based, polyolefin-based or wax-based release agents, and among these, alkyd-based, silicone-based or fluorine-based release agents having heat resistance are particularly preferred.

[0095] According to one embodiment of the present invention, the thickness of the release film is not particularly limited, but may be 3 to 400 μm, alternatively 5 to 200 μm, or alternatively 10 to 150 μm. One embodiment of the present invention provides a semiconductor package comprising the semiconductor adhesive film. The semiconductor package according to one embodiment of the present invention has excellent quality. Specifically, the adhesive film for semiconductor is made of a two-layer structure, which is a heat curing type and a light curing type, so that the fillet can be easily adjusted, and the problem of the solder melting at high temperature and melting to the chip due to the fluidity generated can be prevented, and the quality reliability can be effectively improved.

[0096] The semiconductor adhesive film can be used for bonding semiconductors, and the semiconductors can include circuit boards and semiconductor chips. The circuit boards can include printed circuit boards (PCBs), semiconductor package boards, and flexible semiconductor package boards (FPCBs). EXAMPLES

[0097] Hereinafter, the present invention will be described in detail with reference to examples in order to specifically explain the present invention. However, the examples according to the present invention can be modified into various different forms, and the scope of the present invention is not to be construed as being limited to the examples described below. The examples in the present specification are provided to more completely explain the present invention to those having average knowledge in the art.

[0098] Examples and Comparative Examples (Production of Semiconductor Adhesive Composition and Semiconductor Adhesive Film) sample Liquid epoxy resin (1): RE-310S (Nippon Kayaku, bisphenol A epoxy resin, epoxy equivalent 180g / eq) Liquid epoxy resin (2): LX-01 (OSAKASODA, epoxy equivalent 180g / eq) Solid epoxy resin (1): EOCN-104S (Nippon Kayaku, epoxy equivalent 218g / eq) Solid epoxy resin (2): EOCN-1020-70 (Nippon Kayaku, epoxy equivalent 199g / eq) Acrylate resin (1): KG-3015P (Negami Chemical, Mw: 900,000, glass transition temperature: 10°C) Acrylate resin (2): KG-3104 (Negami Chemical, Mw: 120,000, glass transition temperature: 16°C) Phenolic resin (1): KH-6021 (DIC, bisphenol A novolac, hydroxyl equivalent 121g / eq, softening point 133℃) Phenol resin (2): KA-1160 (DIC, cresol novolac resin, hydroxyl equivalent 117g / eq, softening point 85℃) Inorganic filler (1): YA050C (Admatechs, spherical silica, average particle size approximately 50 nm) Inorganic filler (2): SC-2050 (Admatechs, spherical silica, average particle size approximately 500 nm) Flux agent (1): C3-CIC (SHIKOKU) Fluxing agent (2): Adipic acid (Sigma Aldrich) Curing catalyst (1): C11Z-CN (SHIKOKU, imidazole-based curing catalyst) Curing catalyst (2): 2PZ (SHIKOKU, imidazole-based curing catalyst) Photopolymerizable monomer (1): M300 (MIWON, trimethylolpropane ethoxylate triacrylate) Photopolymerizable monomer (2): EM265 (ETERNAL CHEMICAL, dipentaerythritol hexaacrylate) Photoinitiator: TPO (iGM RESINS, 2,4,6-Trimethylbenzoyldiphenylphosphine oxide)

[0099] Preparation of the first adhesive composition Preparation of the first adhesive composition (1) A first thermosetting resin was prepared by mixing RE-310S as a liquid epoxy resin and EOCN-104S as a solid epoxy resin. In addition, an acrylate resin KG-3015 was prepared as a first thermoplastic resin, and a phenolic resin KH-6021 was prepared as a first thermosetting agent. In addition, YA050C was prepared as a first inorganic filler, and C3-CIC was prepared as a first fluxing agent. In addition, an imidazole-based curing catalyst C11Z-CN was prepared as a first curing catalyst, and methyl ethyl ketone was prepared as a solvent. Then, the first thermosetting resin, the first thermoplastic resin, the first thermosetting agent, the first inorganic filler, the first curing catalyst, the first fluxing agent, and the solvent were mixed to obtain a first adhesive layer composition (solid content 40% by weight). At this time, based on 100 parts by weight of solid content (total weight of the first thermosetting resin, the first thermoplastic resin, the first thermosetting agent, the first inorganic filler, the first fluxing agent, and the first curing catalyst), the content of the liquid epoxy resin was 8.2 parts by weight, the content of the solid epoxy resin was 23.7 parts by weight, the content of the first thermoplastic resin was 11.5 parts by weight, the content of the first thermosetting agent was 12.6 parts by weight, the content of the first inorganic filler was 40 parts by weight, the content of the first fluxing agent was 2.5 parts by weight, and the content of the first curing catalyst was 1.5 parts by weight.

[0100] Preparation of first adhesive composition (2) to first adhesive composition (5) A first adhesive composition was prepared in the same manner as in the preparation of the first adhesive composition (1), except that the composition was adjusted as shown in Tables 1 and 2 below.

[0101] [Table 1]

[0102] [Table 2]

[0103] In Tables 1 and 2, the content of each component is based on 100 parts by weight of solids (total weight of thermosetting resin, thermoplastic resin, thermosetting agent, inorganic filler, flux agent and curing catalyst).

[0104] Preparation of the second adhesive composition Preparation of the second adhesive composition (1) A second thermosetting resin was prepared by mixing RE-310S as a liquid epoxy resin and EOCN-104S as a solid epoxy resin. In addition, an acrylate resin KG-3015 was prepared as a second thermoplastic resin, and a phenolic resin KH-6021 was prepared as a second thermosetting agent. In addition, YA050C was prepared as a second inorganic filler, C3-CIC was prepared as a second fluxing agent, C11Z-CN, an imidazole-based curing catalyst, M300 was prepared as a photopolymerizable monomer, TPO was prepared as a photoinitiator, and methyl ethyl ketone was prepared as a solvent.

[0105] Then, the prepared second thermosetting resin, second thermoplastic resin, second thermosetting agent, second inorganic filler, second curing catalyst, second fluxing agent, photopolymerizable monomer, photoinitiator and solvent were mixed to obtain a second adhesive layer composition (solid content 40 wt%). In this case, based on 100 parts by weight of solids (total weight of the second thermosetting resin, the second thermoplastic resin, the second thermosetting agent, the second inorganic filler, the second fluxing agent, the second curing catalyst, the photopolymerizable monomer, and the photoinitiator), the content of the liquid epoxy resin was 7.7 parts by weight, the content of the solid epoxy resin was 22.9 parts by weight, the content of the second thermoplastic resin was 11.5 parts by weight, the content of the second thermosetting agent was 12.6 parts by weight, the content of the second inorganic filler was 40 parts by weight, the content of the second fluxing agent was 2.5 parts by weight, the content of the second curing catalyst was 1.5 parts by weight, the content of the photopolymerizable monomer was 0.8 parts by weight, and the content of the photoinitiator was 0.5 parts by weight.

[0106] Preparation of second adhesive composition (2) to second adhesive composition (5) A second adhesive composition was prepared in the same manner as the second adhesive composition (1), except that the composition was adjusted as shown in Tables 3 and 4 below.

[0107] [Table 3]

[0108] [Table 4]

[0109] In Tables 3 and 4, the content of each component is based on 100 parts by weight of solids (total weight of thermosetting resin, thermoplastic resin, thermosetting agent, inorganic filler, flux agent, curing catalyst, photopolymerizable monomer, and photoinitiator).

[0110] Manufacturing of adhesive films for semiconductors Example 1 The first adhesive composition (1) was applied onto a release-treated PET film (release film) using a comma coater, and then dried at 120° C. for 3 minutes to form a first adhesive layer having a thickness of 10 μm. Thereafter, the second adhesive composition (1) was applied onto the first adhesive layer in the same manner to form a second adhesive layer having a thickness of 10 μm, thereby producing a semiconductor adhesive film having a double layer (first adhesive layer / second adhesive layer) having a total thickness of 20 μm on the release film.

[0111] Examples 2 to 5 A semiconductor adhesive film was produced in the same manner as in Example 1, except that a double-layer adhesive layer was formed on a release film in the order of a first layer and a second layer using the first adhesive composition and the second adhesive composition as shown in Table 5 below.

[0112] [Table 5]

[0113] In Table 5, "first layer" means the adhesive layer in contact with the release film, and "second layer" means the adhesive layer formed on the adhesive layer of the first layer. At this time, the melt viscosity of the second adhesive layer was measured after irradiating it with light at 1000 mJ.

[0114] Comparative Example 1 (double layer using only the first adhesive composition (5)) The first adhesive composition (5) was applied onto a release-treated PET film (release film) using a comma coater, and then dried at 120° C. for 3 minutes to form a first adhesive layer having a thickness of 10 μm. Thereafter, the first adhesive composition (5) was again applied onto the first adhesive layer in the same manner to form a second adhesive layer having a thickness of 10 μm.

[0115] That is, a semiconductor adhesive film having a double layer (first adhesive layer / second adhesive layer) of 20 μm in total was produced on a release film using only the first adhesive composition (5). At this time, the melt viscosity of the first adhesive layer and the second adhesive layer was 830 Pa s, respectively.

[0116] Comparative Example 2 (double layer using only the second adhesive composition (5)) The second adhesive composition (5) was applied onto a release-treated PET film (release film) using a comma coater, and then dried at 120° C. for 3 minutes to form a first adhesive layer having a thickness of 10 μm. Thereafter, the second adhesive composition (5) was again applied onto the first adhesive layer in the same manner to form a second adhesive layer having a thickness of 10 μm.

[0117] That is, a semiconductor adhesive film having a double layer (first adhesive layer / second adhesive layer) of 20 μm in total was produced on a release film using only the second adhesive composition (5). At this time, the melt viscosity of the first adhesive layer and the second adhesive layer was 2310 Pa s, respectively. At this time, the melt viscosity of the first adhesive layer and the second adhesive layer was measured after irradiation with light at 1000 mJ.

[0118] Semiconductor package manufacturing Example 1 A wafer was prepared that included a bump chip (10.1 mm×6.6 mm) that is a semiconductor element in which lead-free solder is formed to a height of 9 μm on a copper filler having a height of 10 μm and a pitch of 40 μm. FIG. 3 is a diagram illustrating a method for manufacturing a semiconductor package in the first embodiment of the present invention. As shown in FIG. 3, in the semiconductor adhesive film 100 manufactured in Example 1, the second adhesive layer 20 corresponding to the second layer located farthest from the release film and exposed to the outside was attached to the top chip 40, and the bumps 60 on which the solder 70 was formed were subjected to vacuum lamination at 50° C., and photo-curing was performed by irradiating light with an exposure dose of 1000 mJ using a mercury UV lamp (DS-MUV-128). Thereafter, the release film 30 was removed and each chip was separated. The separated bump chips were subjected to thermocompression bonding to a 12.1 mm×8.1 mm base chip having a 40 μm pitch connection pad using a thermocompression bonder. The base chip was composed of a bottom chip (50) and bumps (60′), and the process conditions were a temporary bonding at 100 N for 2 seconds at a head temperature of 120° C., and the head temperature was instantly raised to 260° C. and thermocompression bonding was performed at 200 N for 5 seconds to manufacture a semiconductor package.

[0119] Examples 2 to 5 A semiconductor package was produced in the same manner as in Example 1, except that an adhesive layer corresponding to the second layer of the adhesive film for semiconductor produced in Examples 2 to 5 was attached to the top chip.

[0120] Comparative Example 1 and Comparative Example 2 A semiconductor package was manufactured in the same manner as in Example 1, except that the adhesive layer of the semiconductor adhesive film manufactured in Comparative Example 1 and Comparative Example 2 was attached to the top chip.

[0121] Semiconductor package quality evaluation Fillet Evaluation Five semiconductor package samples were prepared for each of the methods of Examples 1 to 5, Comparative Examples 1 and 2, and the maximum length of the fillet that flowed out from the non-conductive adhesive film was measured by observing the bump chips using an optical microscope. Then, the average and standard deviation of the maximum length of the fillet for each sample were calculated, and the results are shown in Tables 6 and 7 below.

[0122] Joint evaluation For the semiconductor packages manufactured by the methods of Examples 1 to 5, Comparative Examples 1 and 2, a bump (solder) bonding evaluation was carried out by the following method, and the results are shown in Tables 6 and 7 below. The bumps were cross-sectionally polished to expose them, and observed under an optical microscope. If no trapping of the adhesive composition was visible in the bumps and the solder was sufficiently wetted onto the wiring, they were rated as "O", otherwise they were rated as "X", and the results are shown in Tables 6 and 7 below.

[0123] [Table 6]

[0124] [Table 7]

[0125] Referring to Tables 6 and 7, the fillet evaluation results show that the semiconductor packages according to Examples 1 to 5 of the present invention can effectively control the fillets and prevent the bumps from cracking due to excessive fillets. In contrast, the semiconductor package according to Comparative Example 1 showed an average fillet length of 233.9 μm, and it was confirmed that when the chips were stacked, the solder melted and fused to the chip, causing an excess fillet that contaminated the package. In other words, it was confirmed that the semiconductor package according to Comparative Example 1 was inferior in terms of fillet control.

[0126] In addition, in the semiconductor package according to Comparative Example 2, after photocuring, the film became hard and almost no fillets were formed, but the solder was not bonded to the bottom chip, and the results of the bonding evaluation were poor.

[0127] Therefore, by preparing the structure of the semiconductor adhesive film according to one embodiment of the present invention into a two-layer structure with a heat curing type and a photo curing type, it is possible to easily control the fillet generated during the semiconductor packaging process while showing excellent adhesive strength, and to prevent the problem of the solder melting and fusing to the chip, thereby effectively improving the quality reliability.

[0128] Although the present invention has been described above using a limited number of examples, the present invention is not limited thereto, and it is of course possible for a person having ordinary skill in the art to which the present invention pertains to make various modifications and variations within the technical spirit of the present invention and the equivalent scope of the claims described below. [Explanation of symbols]

[0129] 100: Semiconductor adhesive film 10: First adhesive layer 20:Second adhesive layer 30: Release film 40: Top Tip 50: Bottom tip 60, 60': Bump 70: Solder

Claims

1. a first adhesive layer comprising a first adhesive composition comprising a first thermosetting resin, a first thermoplastic resin, and a first thermosetting agent; a second adhesive layer provided on the first adhesive layer and including a second adhesive composition including a second thermosetting resin, a second thermoplastic resin, a second thermosetting agent, a photopolymerizable monomer having one or more photocurable functional groups, and a photoinitiator.

2. 2. The semiconductor adhesive film according to claim 1, wherein the photopolymerizable monomer comprises a (meth)acrylate compound having one or more photocurable functional groups.

3. The content of the second thermosetting resin is The semiconductor adhesive film according to claim 1 , wherein the amount of the second adhesive composition is 20 parts by weight or more and 40 parts by weight or less based on 100 parts by weight of the solid content of the second adhesive composition.

4. The content of the second thermoplastic resin is The semiconductor adhesive film according to claim 1 , wherein the amount of the second adhesive composition is 5 parts by weight or more and 20 parts by weight or less based on 100 parts by weight of the solid content of the second adhesive composition.

5. The content of the second heat curing agent is The semiconductor adhesive film according to claim 1 , wherein the amount of the second adhesive composition is 7.5 parts by weight or more and 17.5 parts by weight or less based on 100 parts by weight of the solid content of the second adhesive composition.

6. The content of the photopolymerizable monomer is The semiconductor adhesive film according to claim 1 , wherein the amount of the second adhesive composition is 0.5 parts by weight or more and 5 parts by weight or less based on 100 parts by weight of the solid content of the second adhesive composition.

7. The content of the photoinitiator is The semiconductor adhesive film according to claim 1 , wherein the amount of the second adhesive composition is 0.5 parts by weight or more and 5 parts by weight or less based on 100 parts by weight of the solid content of the second adhesive composition.

8. The semiconductor bonding film according to claim 1 , wherein a weight ratio of the photoinitiator to the second thermal curing agent is from 1:0.5 to 1:

50.

9. 2. The semiconductor bonding film according to claim 1, wherein the first thermosetting resin and the second thermosetting resin each independently include at least one of a solid epoxy resin and a liquid epoxy resin.

10. The semiconductor adhesive film according to claim 1, wherein the first thermoplastic resin and the second thermoplastic resin each independently include at least one of polyimide, polyetherimide, polyesterimide, polyamide, polyethersulfone, polyetherketone, polyolefin, polyvinyl chloride, phenoxy, reactive butadiene acrylonitrile copolymer rubber, and (meth)acrylate resin.

11. The semiconductor adhesive film according to claim 1 , wherein the first adhesive composition and the second adhesive composition each independently further contain an additive including at least one of an inorganic filler, a curing catalyst, and a fluxing agent.

12. 2. The semiconductor adhesive film according to claim 1, wherein a thickness ratio of the first adhesive layer to the second adhesive layer is 1:9 to 9:

1.

13. The semiconductor adhesive film according to claim 1 , wherein the first adhesive layer and the second adhesive layer have different melt viscosities after the adhesive film is irradiated with light.

14. Further comprising a release film, The semiconductor adhesive film according to claim 1 , wherein the first adhesive layer is provided on the release film.

15. A semiconductor package comprising the semiconductor adhesive film according to claim 1.

Images