Thin film manufacturing method and thin film

Abstract

The present invention relates to a method for manufacturing a thin film, and the thin film includes an adsorption process for adsorbing a high-κ dielectric material onto a substrate by injecting a source gas of the high-κ dielectric material, a deposition process for depositing a thin film of the high-κ dielectric material onto the substrate by injecting a reactant gas that reacts with the source gas, and a crystallization process for crystallizing the high-κ dielectric material using plasma.

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing a thin film on a substrate through a processing step such as a deposition step. [Background technology]

[0002] Generally, in order to manufacture semiconductor devices, display devices, solar cells, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. For this purpose, a deposition process for depositing a thin film of a specific material on the substrate, a photo process for selectively exposing the thin film using a photosensitive material, an etching process for removing the thin film at the selectively exposed portion to form a pattern, and other substrate processing processes are performed. Through such substrate processing processes, a thin film can be formed on the substrate.

[0003] In recent years, semiconductor devices, display devices, solar cells, etc. have been developed to be not only finer but also thinner, and therefore the thickness of the thin film must be thinner. However, in the case of a thin film implemented as an insulating layer between a semiconductor layer and a gate layer in a thin film transistor (TFT), as the thickness of the thin film becomes thinner, there is a problem that current leakage occurs due to a tunneling phenomenon, etc.

[0004] Therefore, there is a need to develop a thin film that can be thin and reduce current leakage. Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention has been devised to solve the above problems, and aims to provide a thin film and a method for manufacturing the thin film that can reduce current leakage while having a thin thickness. [Means for solving the problem]

[0006] In order to solve the above-mentioned problems, the present invention can include the following configurations.

[0007] The method for manufacturing a thin film according to the present invention may include an adsorption process for adsorbing a high-κ dielectric material onto a substrate by injecting a source gas made of a high-κ dielectric material, a deposition process for depositing a thin film made of a high-κ dielectric material onto the substrate by injecting a reactant gas that reacts with the source gas, and a crystallization process for crystallizing the high-κ dielectric material using plasma.

[0008] The thin film according to the present invention may include a thin film layer formed on a substrate using a mixture containing a high dielectric constant material. The thin film layer may be formed to a thickness of 40 to 70 Å and crystallized to have a relative dielectric constant of 20 to 30. Effect of the Invention

[0009] According to the present invention, the following effects can be obtained.

[0010] The present invention is made of a high dielectric constant material and is crystallized using plasma, so that current leakage can be further reduced even when the thickness is thinner, and therefore the present invention can contribute to the manufacture of thin film transistors and the like with finer detail and thinner thickness.

[0011] The present invention can be embodied by forming a thin film from a high dielectric constant material and crystallizing it using plasma, thereby manufacturing a thin film with improved quality through film densification, crystallization, impurity removal, etc. [Brief description of the drawings]

[0012] [Figure 1] 1 is a schematic diagram showing an example of a substrate processing apparatus in which a thin-film manufacturing method according to the present invention is performed; [Diagram 2]1 is a schematic side cross-sectional view of an injection section that injects gas in an example of a substrate processing apparatus in which a thin-film manufacturing method according to the present invention is performed. [Diagram 3] FIG. 1 is a schematic cross-sectional side view showing an example of a thin film transistor. [Figure 4] 1 is a schematic flow chart of a method for manufacturing a thin film according to the present invention. [Diagram 5] 1 is a schematic flow chart of a method for manufacturing a thin film according to the present invention. [Figure 6] 1 is a schematic flow chart of a method for manufacturing a thin film according to the present invention. [Figure 7] 1 is a schematic flow chart of a method for manufacturing a thin film according to the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] Hereinafter, an embodiment of the thin film manufacturing method according to the present invention will be described in detail with reference to the accompanying drawings. In describing the embodiment of the present invention, when a structure is described as being formed "on" or "under" another structure, such a description should be interpreted as including not only the case where these structures are in contact with each other, but also the case where a third structure is interposed between these structures.

[0014] 1 to 4, the method for producing a thin film according to the present invention is to perform a treatment process on a substrate (S) to produce a thin film on the substrate (S). The substrate (S) may be a silicon substrate, a glass substrate, a metal substrate, etc.

[0015] The thin film manufacturing method according to the present invention can be performed by a substrate processing apparatus 1. Before describing an embodiment of the thin film manufacturing method according to the present invention, the substrate processing apparatus 1 will be specifically described as follows.

[0016] 1 and 2, a substrate processing apparatus 1 can include a chamber 2, a substrate support 3, and an injector 4.

[0017] The chamber 2 provides a processing space 100. In the processing space 100, a processing step can be performed on a substrate (S) to produce a thin film on the substrate (S). The processing space 100 can be disposed inside the chamber 2. The chamber 2 can also be coupled with an exhaust port (not shown) for exhausting gas from the processing space 100. A substrate support unit 3 and an injection unit 4 can be disposed inside the chamber 2.

[0018] The substrate support 3 supports the substrate (S). The substrate support 3 can support one substrate (S) or multiple substrates (S). When multiple substrates (S) are supported on the substrate support 3, a process can be performed on the multiple substrates (S) at once to manufacture a thin film on each of the substrates (S). The substrate support 3 can be coupled to the chamber 2. The substrate support 3 can be disposed inside the chamber 2.

[0019] The jet unit 4 jets gas toward the substrate support 3. The jet unit 4 may be connected to the gas storage unit 40. In this case, the jet unit 4 may jet the gas supplied from the gas storage unit 40 toward the substrate support 3. The jet unit 4 may be disposed inside the chamber 2. The jet unit 4 may be disposed facing the substrate support 3. The jet unit 4 may be disposed above the substrate support 3. A processing space 100 may be disposed between the jet unit 4 and the substrate support 3. The jet unit 4 may be coupled to a lid (not shown). The lid may be coupled to the chamber 2 so as to cover an upper portion of the chamber 2.

[0020] The ejection portion 4 may include a first gas flow passage 4a and a second gas flow passage 4b.

[0021] The first gas flow path 4a is for injecting the first gas. One side of the first gas flow path 4a can be connected to the gas storage unit 40 via a pipe, a hose, or the like. The other side of the first gas flow path 4a can be connected to the processing space 100. Thereby, the first gas supplied from the gas storage unit 40 can flow along the first gas flow path 4a and then be injected into the processing space 100 through the first gas flow path 4a. The first gas flow path 4a can function as a flow path for the first gas to flow and also as an injection port for injecting the first gas into the processing space 100.

[0022] The second gas flow passage 4b ​​is for injecting the second gas. The second gas and the first gas may be different gases. For example, when the first gas is a source gas, the second gas may be a reactant gas. One side of the second gas flow passage 4b ​​may be connected to the gas storage unit 40 via a pipe, a hose, or the like. The other side of the second gas flow passage 4b ​​may be connected to the processing space 100. Thus, the second gas supplied from the gas storage unit 40 may flow along the second gas flow passage 4b ​​and then be injected into the processing space 100 through the second gas flow passage 4b. The second gas flow passage 4b ​​may function as a flow passage for the second gas to flow and also as an injection port for injecting the second gas into the processing space 100.

[0023] The second gas flow path 4b and the first gas flow path 4a can be arranged so as to be spatially separated from each other. As a result, the second gas supplied from the gas storage unit 40 to the second gas flow path 4b can be sprayed into the processing space 100 without passing through the first gas flow path 4a. The first gas supplied from the gas storage unit 40 to the first gas flow path 4a can be sprayed into the processing space 100 without passing through the second gas flow path 4b. The second gas flow path 4b and the first gas flow path 4a can spray gas toward different portions of the processing space 100.

[0024] For example, the injection portion 4 may include a first plate 41 and a second plate 42 .

[0025] The first plate 41 is disposed above the second plate 42. The first plate 41 and the second plate 42 may be disposed apart from each other. The first plate 41 may have a plurality of first vent holes 411 formed therein. The first vent holes 411 may function as passages through which a first gas flows. The first vent holes 411 may belong to the first gas flow path 4a. The first plate 41 may have a plurality of second vent holes 412 formed therein. The second vent holes 412 may function as passages through which a second gas flows. The second vent holes 412 may belong to the second gas flow path 4b. The first plate 41 may have a plurality of protruding members 413 coupled thereto. The protruding members 413 may protrude from the lower surface of the first plate 41 toward the second plate 42. Each of the first vent holes 411 may be formed by penetrating the first plate 41 and the protruding members 413.

[0026] A plurality of openings 421 may be formed in the second plate 42. The openings 421 may be formed penetrating the second plate 42. The openings 421 may be disposed at positions corresponding to the respective protruding members 413. Thus, as shown in FIG. 2, the protruding members 413 may be formed to a length disposed to be inserted into the respective openings 421. Although not shown in the figure, the protruding members 413 may also be formed to a length disposed above the respective openings 421. The protruding members 413 may also be formed to a length protruding below the second plate 42. The second vent 412 may be disposed to inject gas toward the upper surface of the second plate 42.

[0027] The injection unit 4 can generate plasma using the second plate 42 and the first plate 41. In this case, a plasma power source such as RF power can be applied to the first plate 41, and the second plate 42 can be grounded. It is also possible to ground the first plate 41 and apply a plasma power source to the second plate 42.

[0028] The thin film manufacturing method according to the present invention can be carried out using such a substrate processing apparatus 1.

[0029] 1 to 4, the thin film manufacturing method according to the present invention can manufacture a thin film embodied as an insulating layer 210 in a thin film transistor 200 as shown in FIG. 3. The insulating layer 210 can be disposed between a gate electrode 220 and a semiconductor layer 230. The gate electrode 220 can be formed on a substrate (S). The semiconductor layer 230 can be formed on the insulating layer 210. A source electrode 240 and a drain electrode 250 can be formed on the semiconductor layer 230. When the thin film transistor 200 is manufactured to have a smaller thickness as well as to be further miniaturized, the thickness of the insulating layer 210 also becomes thinner, but as the thickness of the insulating layer 210 becomes thinner, current leakage may occur due to a tunneling phenomenon or the like.

[0030] In order to reduce such current leakage, the thin film manufacturing method according to the present invention is embodied to manufacture a thin film made of a high dielectric constant (High-K) material. Moreover, the thin film manufacturing method according to the present invention is embodied to manufacture a thin film by crystallizing the high dielectric constant material. As a result, the thin film manufacturing method according to the present invention manufactures a thin film that can further reduce current leakage, thereby contributing to manufacturing a finer and thinner thin film transistor 200.

[0031] To this end, the method for producing a thin film according to the present invention may include an adsorption process (S10), a deposition process (S20), and a crystallization process (S30).

[0032] The adsorption process (S10) is a process of injecting a source gas made of a high dielectric constant material to adsorb the high dielectric constant material onto the substrate (S). The adsorption process (S10) can be performed by injecting the source gas onto the substrate (S) through the first gas flow path 4a of the injection unit 4. The source gas can include at least one of hafnium (Hf) and zirconium (Zr). Both hafnium and zirconium are high dielectric constant materials. The adsorption process (S10) can be performed by injecting a mixed gas containing at least one of hafnium and zirconium as a source gas onto the substrate (S). In this case, the first source gas containing hafnium and the second source gas containing zirconium can be mixed in a buffer tank disposed away from the injection unit 4 to generate a mixed gas, and then the mixed gas can be supplied to the injection unit 4 and injected into the processing space 100. As a result, the method for manufacturing a thin film according to the present invention can manufacture a thin film with improved step coverage as well as improved composition uniformity. The adsorption process (S10) can be performed by sequentially injecting a first gas containing hafnium and a second gas containing zirconium onto the substrate (S). Meanwhile, the source gas can include at least one of hafnium, zirconium, and aluminum (Al). For example, the source gas can be any one of HfO2, ZrO2, AL2O3, and HfZrO.

[0033] The deposition process (S20) is a process of depositing a thin film made of a high dielectric constant material on the substrate (S) by injecting a reactant gas that reacts with the source gas. The deposition process (S20) can be performed by injecting the reactant gas onto the substrate (S) through the second gas passage 4b ​​of the injector 4. Through the adsorption process (S10) and the deposition process (S20), a thin film can be formed on the substrate (S) by an atomic layer deposition (ALD) method. The deposition process (S20) can be performed by injecting ozone (O3) as a reactant gas onto the substrate (S).

[0034] The crystallization process (S30) is a process of crystallizing the high dielectric constant material using plasma. Through the crystallization process (S30), the high dielectric constant material is crystallized using plasma to manufacture a thin film, and the thin film manufacturing method according to the present invention can achieve the following effects.

[0035] First, in the case of the comparative example manufactured as a thin film made of a high dielectric constant material without the crystallization process (S30), it shows a larger leakage current value at the same thickness than a thin film made of a high dielectric constant material and crystallized through the thin film manufacturing method according to the present invention. Thus, since the thin film manufacturing method according to the present invention is embodied to be able to manufacture a thin film made of a high dielectric constant material and crystallized, it is possible to manufacture a thin film that can reduce current leakage even if it is formed to a thinner thickness than the thin film according to the comparative example. Therefore, the thin film manufacturing method according to the present invention can contribute to manufacturing a thin film transistor 200 etc. with a finer and thinner thickness.

[0036] Secondly, in the comparative example in which a high dielectric constant material is crystallized through a thermal process, the high dielectric constant material is not crystallized unless it is formed to a predetermined thickness or more. For example, in the thermal process, the high dielectric constant material including at least one of hafnium and zirconium is not crystallized unless it is formed to a thickness of 100 Å or more. In contrast, the thin film manufacturing method according to the present invention crystallizes the high dielectric constant material using plasma, so that the high dielectric constant material can be crystallized even if it is formed to a thinner thickness compared to the comparative example in which a high dielectric constant material is crystallized through a thermal process. For example, the high dielectric constant material including at least one of hafnium and zirconium can be crystallized through plasma even if it is formed to a thickness of 60 Å or less. Therefore, the thin film manufacturing method according to the present invention crystallizes the high dielectric constant material using plasma, so that a thin film that can further reduce current leakage can be manufactured even if it is formed to a thinner thickness.

[0037] Third, the thin film manufacturing method according to the present invention can achieve a densification effect and a crystallization effect that increase the density of the film by forming a thin film from a high dielectric material and crystallizing it using plasma. When plasma energy is transferred into the thin film using plasma, crystallization progresses in the thin film and at the same time impurities are removed, and the crystal bonds of crystals with low bonding strength are broken, leaving only crystals with high bonding strength. Therefore, the thin film manufacturing method according to the present invention can manufacture a thin film with improved quality through film densification, crystallization, impurity removal, etc.

[0038] The crystallization process (S30) can be performed by crystallizing the high dielectric constant material using plasma in an ultra-high vacuum state, and thus the method for manufacturing a thin film according to the present invention can improve the stability of the crystallization process (S30).

[0039] The crystallization step (S30) may generate plasma using a plasma gas containing at least one of helium (He), argon (Ar), and ammonia (NH3). In this case, the source gas may contain at least one of hafnium and zirconium, and the reactant gas may be ozone. The source gas may also contain at least one of hafnium, zirconium, and aluminum.

[0040] The crystallization process (S30) can be performed after the deposition process (S20). In this case, the thin film manufacturing method according to the present invention can deposit a thin film on the substrate (S) through the adsorption process (S10) and the deposition process (S20), and then crystallize the high dielectric constant material of the thin film deposited on the substrate (S) using plasma through the crystallization process (S30). After the crystallization process (S30) is performed, the adsorption process (S10) can be performed again. Meanwhile, when the crystallization process (S30) is performed after the deposition process (S20), the thin film manufacturing method according to the present invention can perform a thermal process in parallel. The thermal process can be performed continuously or intermittently while the adsorption process (S10), the deposition process (S20), and the crystallization process (S30) are performed.

[0041] 1 to 5, the method for producing a thin film according to the present invention may include a first purging step (S40) and a second purging step (S50).

[0042] The first purge process (S40) may be performed by injecting a purge gas onto the substrate (S) after the adsorption process (S10). The first purge process (S40) may be performed by injecting a purge gas onto the substrate (S) through at least one of the first gas passage 4a and the second gas passage 4b ​​of the injector 4. The first purge process (S40) may be performed by injecting a purge gas onto the substrate (S) through a purge gas passage (not shown) of the injector 4. The purge gas passage, the first gas passage 4a, and the second gas passage 4b ​​may be implemented to be spatially separated from each other. After the first purge process (S40), the deposition process (S20) may be performed.

[0043] The second purge process (S50) can be performed by injecting a purge gas onto the substrate (S) after the deposition process (S20). The second purge process (S50) can be performed by injecting a purge gas onto the substrate (S) through at least one of the first gas flow path 4a and the second gas flow path 4b of the injection unit 4. The second purge process (S50) can also be performed by injecting a purge gas onto the substrate (S) through a purge gas flow path (not shown). After the second purge process (S50), the crystallization process (S30) can be performed.

[0044] 1 to 6, in the method for producing a thin film according to the present invention, the deposition process (S20) and the crystallization process (S30) can be performed together. In this case, the reactant gas sprayed to the substrate (S) through the deposition process (S20) can be activated by using the plasma generated by the crystallization process (S30) and reach the substrate (S). Thus, in the method for producing a thin film according to the present invention, the deposition process (S20) and the crystallization process (30) can be performed together to deposit a thin film made of a high dielectric constant material on the substrate (S) and crystallize the high dielectric constant material using plasma. After the deposition process (S20) and the crystallization process (S30) are performed together, the process can be performed again from the adsorption process (S10).

[0045] 1 to 7, in the thin film manufacturing method according to the present invention, the crystallization step (S30) may include a first crystallization step (S31) and a second crystallization step (S32).

[0046] The first crystallization process (S31) is a process for crystallizing a high dielectric constant material using plasma. The first crystallization process (S31) can be performed together with the deposition process (S20). In this case, the reactant gas injected to the substrate (S) through the deposition process (S20) can be activated by the plasma generated by the first crystallization process (S31) and reach the substrate (S). Thus, the method for producing a thin film according to the present invention can deposit a thin film made of a high dielectric constant material on the substrate (S) and crystallize the high dielectric constant material using plasma by performing the deposition process (S20) and the first crystallization process (S31) together.

[0047] The second crystallization process (S32) is a process of crystallizing the high dielectric constant material using plasma. The second crystallization process (S32) can be performed after the deposition process (S20) and the first crystallization process (S31). Thus, the thin film manufacturing method according to the present invention can be embodied such that the thin film is primarily crystallized through the first crystallization process (S31) and then secondarily crystallized through the second crystallization process (S32). Therefore, the thin film manufacturing method according to the present invention can increase the crystallization rate of the thin film, so that a thin film that can further reduce current leakage even when formed to a thinner thickness can be manufactured. Thus, the thin film manufacturing method according to the present invention can contribute to manufacturing a thin film transistor 200 and the like with a finer and thinner thickness. After the second crystallization process (S32) is performed, the adsorption process (S10) can be performed again.

[0048] In the following, examples of thin films according to the present invention are described in detail.

[0049] 1 to 7, the thin film according to the present invention can be manufactured by the above-mentioned method for manufacturing a thin film according to the present invention. The thin film according to the present invention can be embodied as an insulating layer 210 disposed between a gate electrode 220 and a semiconductor layer 230 in a thin film transistor 200.

[0050] The thin film according to the present invention may include a thin film layer formed on a substrate (S). The thin film layer may be formed on the substrate (S) using a mixture containing a high dielectric constant material. The thin film layer may be formed to a thickness of 40 Å to 70 Å and crystallized to have a relative dielectric constant of 20 to 30. As a result, the thin film according to the present invention is embodied to have a dielectric constant capable of reducing current leakage while being formed to a thin thickness, which may contribute to the manufacture of thin film transistors 200 and the like with finer detail and thinner thickness.

[0051] Here, if the thin film layer is formed to a thickness of less than 40 Å, current leakage increases, and if the thin film layer is formed to a thickness of more than 70 Å, it is difficult to make the thin film layer thinner. If the thin film layer is crystallized to have a relative dielectric constant of less than 20, it is difficult to reduce current leakage, and if the thin film layer is crystallized to have a relative dielectric constant of more than 39, it becomes a conductor and is difficult to function as an insulating layer. In consideration of this, the thin film according to the present invention may be embodied by forming the thin film layer to a thickness of 40 Å to 70 Å and crystallizing it to have a relative dielectric constant of 20 to 30.

[0052] The thin film layer may be formed of a mixture containing at least one of hafnium and zirconium. The thin film layer may also be formed of a mixture containing at least one of hafnium, zirconium, and aluminum. The thin film layer may be deposited on the substrate (S) through an adsorption process (S10) and a deposition process (S20), and crystallized through a crystallization process (S30).

[0053] The thin film layer may be partially crystallized to a thickness of 40 Å to 70 Å and to have a dielectric constant of 20 to 30. In this case, the thin film according to the present invention can reduce process time compared to a case where the entire thin film layer is crystallized, and can be embodied to have a thickness and dielectric constant sufficient for use as the insulating layer 210, thereby increasing productivity.

[0054] On the other hand, the relative dielectric constant of the thin film layer can be determined by the following equation 1.

[0055]

number

[0056] In Equation 1, COX may be the oxide capacitance of the thin film layer, D may be the thickness of the thin film layer, and A may be the area of ​​the thin film layer. The dielectric constant of the thin film layer calculated using Equation 1 may be embodied in a range of 20 to 30.

[0057] The thin film layer may be formed to have an equivalent oxide thickness (EOT) of 6.5 to 9.7 Å. EOT indicates the degree of thickness effect of a high dielectric constant material compared to silicon dioxide (SiO2). That is, EOT is expressed by the thickness of silicon dioxide (SiO2) when it is assumed to have the same capacitance as the high dielectric constant material. If the EOT of the thin film layer is less than 6.5 Å, current leakage increases, and if the EOT of the thin film layer exceeds 9.7 Å, it is difficult to make the thin film layer thin. In consideration of this, the thin film layer may be formed to have an EOT of 6.5 to 9.7 Å, thereby realizing a thin film having reduced current leakage.

[0058] The thin film layer is formed of a high dielectric constant material and can be crystallized using plasma. When plasma energy is transferred into the thin film using plasma, crystallization proceeds in the thin film and impurities are simultaneously removed, and crystals with low bonding strength are broken, leaving only crystals with high bonding strength. Therefore, the thin film according to the present invention can have improved quality through film densification, crystallization, impurity removal, etc. The thin film layer can be formed by crystallizing a high dielectric constant material using plasma in an ultra-high vacuum state.

[0059] The present invention described above is not limited to the above-mentioned embodiments and the accompanying drawings, and it will be apparent to those skilled in the art to which the present invention pertains that various substitutions, modifications and alterations are possible without departing from the technical spirit of the present invention.

Claims

1. an adsorption process for adsorbing a high-k material onto the substrate by injecting a source gas made of a high-k material; a deposition process for depositing a thin film of a high dielectric constant material on the substrate by injecting a reactant gas that reacts with the source gas; and A thin film manufacturing method including a crystallization process for crystallizing a high dielectric constant material using plasma.

2. 2. The method for producing a thin film according to claim 1, wherein the crystallization step is carried out after the deposition step.

3. 2. The method of claim 1, wherein the crystallization step and the deposition step are carried out together.

4. The crystallization step comprises: a first crystallization step conducted together with said deposition step; and 2. The method for producing a thin film according to claim 1, further comprising a second crystallization step performed after the deposition step and the first crystallization step.

5. 2. The method of claim 1, wherein the adsorption step comprises injecting a mixed gas containing at least one of hafnium (Hf) and zirconium (Zr) as a source gas onto the substrate.

6. The crystallization step is carried out using helium (He), argon (Ar), and ammonia (NH ３ 2. The method for producing a thin film according to claim 1, wherein the plasma is generated using a plasma gas containing at least one of the following:

7. The deposition process uses ozone (O ３ 7. The method for producing a thin film according to claim 6, further comprising spraying a mixture of the above-mentioned components onto the substrate.

8. a first purge step of injecting a purge gas onto the substrate after the adsorption step; and 8. The method for producing a thin film according to claim 1, further comprising a second purge step of injecting a purge gas onto the substrate after the deposition step.

9. A thin film layer formed on a substrate using a mixture including a high-k material, The thin film layer is formed to a thickness of 40 Å or more and 70 Å or less, and is crystallized to have a relative dielectric constant of 20 or more and 30 or less.

10. The thin film of claim 9, wherein the thin film layer is formed of a mixture containing at least one of hafnium (Hf) and zirconium (Zr).

11. 10. The thin film according to claim 9, wherein the thin film layer is partially crystallized to have a thickness of 40 to 70 Å and a relative dielectric constant of 20 to 30.

12. The dielectric constant of the thin film layer is determined by the following formula: [0010] 10. The thin film of claim 9, wherein COX is the oxide capacitance of the thin film layer, D is the thickness of the thin film layer, and A is the area of ​​the thin film layer.

13. The thin film according to claim 9, wherein the thin film layer is formed to have an equivalent oxide thickness (EOT) of 6.5 to 9.7 Å.

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