Quantum dot composition, light emitting device using the same, and electronic device including the light emitting device

Abstract

Provided are a quantum dot composition comprising first quantum dots and second quantum dots, wherein a VBM (valence band maximum) energy level of the first quantum dot is different from a VBM (valence band maximum) energy level of the second quantum dot, and an energy band gap of the first quantum dot is the same as an energy band gap of the second quantum dot. A light-emitting device using the quantum dot composition, and an electronic device including the light-emitting device are provided.

Description

[Technical field]

[0001] The present invention relates to a quantum dot composition, a light-emitting device using the same, and an electronic device including the light-emitting device. [Background technology]

[0002] Quantum dots can be used as materials that perform various optical functions (e.g., light conversion function, light emission function, etc.) in optical components and various electronic devices. Quantum dots are nano-sized semiconductor nanocrystals that exhibit the quantum confinement effect, and by controlling the size and composition of the nanocrystals, they can have different energy band gaps and thus emit light of various emission wavelengths.

[0003] The optical member including the quantum dots may have a thin film form, for example, a thin film form patterned for each subpixel, and may be used as a color conversion member of a device including various light sources.

[0004] In addition, quantum dots can be used for various purposes in various electronic devices. For example, quantum dots can be used as emitters. As an example, in a light-emitting element including a pair of electrodes and a light-emitting layer, quantum dots can play the role of an emitter by being included in the light-emitting layer.

[0005] Currently, in order to realize high-quality optical components and electronic devices, there is a demand for the development of quantum dots that emit blue light with a maximum emission wavelength of 490 nm or less, have excellent luminescence quantum efficiency (PLQY), and do not contain the toxic element cadmium. Summary of the Invention [Problem to be solved by the invention]

[0006] The problem to be solved by the present invention is to provide a quantum dot composition, a light-emitting device using the quantum dot composition and having improved luminous efficiency and lifetime, and an electronic device including the light-emitting device. [Means for solving the problem]

[0007] According to one embodiment, A first quantum dot and a second quantum dot are included. The VBM (valence band maximum) energy level of the first quantum dot is different from the VBM energy level of the second quantum dot, A quantum dot composition is provided in which the energy band gap of the first quantum dot and the energy band gap of the second quantum dot are the same.

[0008] According to another embodiment, a first electrode, a second electrode facing the first electrode, and an intermediate layer including a light-emitting layer disposed between the first electrode and the second electrode; A light-emitting layer is provided for the light-emitting device, the light-emitting layer comprising the quantum dot composition.

[0009] According to yet another embodiment, an electronic device is provided that includes a light-emitting element. Effect of the Invention

[0010] The light emitting device according to the present invention can improve luminous efficiency and lifetime by using a quantum dot composition including two or more types of quantum dots having different energy band positions but the same energy band gap. [Brief description of the drawings]

[0011] [Figure 1] 1 is a diagram illustrating a schematic structure of a light emitting device according to an embodiment. [Diagram 2] 1 is a diagram illustrating a charge injection of a light emitting device according to an embodiment; [Diagram 3] 1 is a schematic diagram illustrating a structure of an electronic device according to an embodiment; [Figure 4] 13 is a schematic diagram illustrating a structure of an electronic device according to another embodiment. [Figure 5a] FIG. 2 is a diagram showing the conduction band minimum (CBM) energy and valence band maximum (VBM) energy of quantum dots according to Synthesis Examples 1-1 to 1-3. [Figure 5b] FIG. 1 is a diagram showing the CBM energy and VBM energy of quantum dots according to Synthesis Examples 2-1 to 2-3. [Figure 5c] FIG. 1 shows the CBM energies and VBM energies of quantum dots according to Synthesis Examples 3-1 to 3-5. [Figure 6a] 1 is a graph showing the luminous efficiency according to the luminance of light-emitting elements according to Example 1 and Comparative Example 1. FIG. [Figure 6b] 1 is a diagram showing the lifetimes of light-emitting elements according to Example 1 and Comparative Example 1. FIG. [Figure 7a] 13 is a graph showing the luminous efficiency according to the luminance of the light-emitting devices according to Example 2 and Comparative Example 2. FIG. [Figure 7b] 13 is a graph showing the lifetimes of light-emitting elements according to Example 2 and Comparative Example 2. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] The present invention can be modified in various ways and can have various embodiments, but specific embodiments are illustrated in the drawings and will be described in detail by detailed description. The effects, features, and methods of achieving the present invention will become clear by referring to the examples described in detail below together with the drawings. However, the present invention is not limited to the examples disclosed below and can be implemented in various forms.

[0013] In this specification, the terms "first", "second", etc. are not used in a limiting sense but are used only to distinguish one component from another component.

[0014] In this specification, the singular expression includes the plural expression unless the context clearly indicates otherwise.

[0015] In this specification, the term "comprise" or "have" means that the features or components described in the specification are present, and does not preclude the possibility that one or more other features or components may be added. For example, unless otherwise limited, the term "comprise" or "have" can mean either a case in which the feature or component described in the specification is (consist of) only, or a case in which other components are further included.

[0016] As used herein, "Group II" includes Group IIA and Group IIB elements on the IUPAC Periodic Table, and Group II elements can include, for example, magnesium (Mg), calcium (Ca), zinc (Zn), cadmium (Cd), mercury (Hg), and the like.

[0017] As used herein, "Group III" includes Group IIIA and Group IIIB elements on the IUPAC periodic table, and Group III elements can include, for example, aluminum (Al), gallium (Ga), indium (In), thallium (Tl), and the like.

[0018] As used herein, "Group V" includes Group VA and Group VB elements on the IUPAC periodic table, and Group V elements can include, for example, nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), and the like.

[0019] As used herein, "Group VI" includes Group VIA and Group VIB elements on the IUPAC Periodic Table, and Group VI elements can include, for example, sulfur (S), selenium (Se), tellurium (Te), and the like.

[0020] [Quantum dot composition] The quantum dot composition according to the present invention includes first quantum dots and second quantum dots, and a VBM (valence band maximum) energy level of the first quantum dots and a VBM (valence band maximum) energy level of the second quantum dots are different, and an energy band gap of the first quantum dots and an energy band gap of the second quantum dots may be the same.

[0021] According to an embodiment, the VBM energy level of the first quantum dot may be from -6 to -5 eV, from -5.9 to -5.1 eV, from -5.85 to -5.2 eV, from -5.8 to -5.3 eV, or from -5.75 to -5.4 eV.

[0022] According to an embodiment, the VBM energy level of the second quantum dot may be from -6 to -5 eV, from -5.95 to -5.1 eV, from -5.9 to -5.2 eV, from -5.9 to -5.3 eV, or from -5.9 to -5.5 eV.

[0023] According to an embodiment, the difference between the VBM energy level of the first quantum dot and the VBM energy level of the second quantum dot may be 0.01 to 1 eV, 0.01 to 0.7 eV, 0.05 to 0.5 eV, or 0.1 to 0.3 eV.

[0024] According to an embodiment, the energy band gap of the first quantum dot and the energy band gap of the second quantum dot may be 1 to 5 eV, 1.5 to 4 eV, or 2 to 3 eV.

[0025] According to one embodiment, the first quantum dot and the second quantum dot each independently include a core and a shell covering a portion of the core, and the size of the core in the first quantum dot may be different from the size of the core in the second quantum dot.

[0026] According to an embodiment, the cores of the first quantum dot and the second quantum dot may each contain In or Zn.

[0027] According to one embodiment, the cores of the first quantum dot and the second quantum dot may comprise InGaP, the Ga content in the core of the first quantum dot may be greater than the Ga content in the core of the second quantum dot, and the size of the core of the first quantum dot may be greater than the size of the core of the second quantum dot.

[0028] According to one embodiment, the cores of the first quantum dot and the second quantum dot may comprise ZnSeTe, the Te content in the core of the first quantum dot may be greater than the Te content in the core of the second quantum dot, and the size of the core of the first quantum dot may be smaller than the size of the core of the second quantum dot.

[0029] According to one embodiment, the shells of the first quantum dot and the second quantum dot may each independently comprise two or more layers, for example, the first quantum dot and the second quantum dot may each comprise two layers.

[0030] According to an embodiment, in the first quantum dot and the second quantum dot, the shell may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, ZnSeS, ZnTeS, GaAs, GaP, GaN, GaO, GaSb, HgS, HgSe, HgTe, InAs, InP, InS, InZnP, InZnS, InGaP, InGaN, InSb, AlAs, AlP, AlSb, PbS, TiO, SrSe, or any combination thereof. For example, the shell may include ZnS, ZnSe, ZnSeS, or any combination thereof.

[0031] According to another embodiment, the first quantum dot comprises a first nanomaterial and a first ligand disposed on a surface of the first nanomaterial, and the second quantum dot comprises a second nanomaterial and a second ligand disposed on a surface of the second nanomaterial, and the first ligand and the second ligand may, independently of each other, comprise a halide, a thiol-based compound, a carboxylic acid-containing compound, or any combination thereof.

[0032] According to other embodiments, the first nanomaterial and the second nanomaterial may be the same.

[0033] According to other embodiments, the first nanomaterial and the second nanomaterial may, independently of each other, comprise a II-VI semiconductor compound, a III-V semiconductor compound, a III-VI semiconductor compound, a I-III-VI semiconductor compound, a IV-VI semiconductor compound; a Group IV element or compound, or any combination thereof.

[0034] According to another embodiment, the first nanomaterial and the second nanomaterial may each independently comprise a core and a shell covering a portion of the core. For example, the shell may comprise two or more layers.

[0035] According to another embodiment, the core in the first nanomaterial and the core in the second nanomaterial may be, independently of each other, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb; CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, GaN, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNPs, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNPs, InAlP, InNAs, InNSb, InPAs, InPSb; CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaAlNPs, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNPs, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNPs, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or any combination thereof.

[0036] According to other embodiments, the shell in the first nanomaterial and the shell in the second nanomaterial may, independently of each other, comprise ZnS, ZnSe, ZnTe, ZnO, ZnSeS, ZnTeS, GaAs, GaP, GaN, GaO, GaSb, HgS, HgSe, HgTe, InAs, InP, InS, InGaP, InSb, InZnP, InZnS, InGaP, InGaN, AlAs, AlP, AlSb, PbS, TiO, SrSe, or any combination thereof.

[0037] According to another embodiment, the first ligand and the second ligand may be the same, and the content of the first ligand in the first quantum dots may be different from the content of the second ligand in the second quantum dots. For example, the content of the first ligand in the first quantum dots may be 1% or more higher than the content of the second ligand in the second quantum dots based on the elemental ratio.

[0038] According to yet another embodiment, the first ligand and the second ligand may be different from each other.

[0039] According to another embodiment, the thiol-based compound comprises at least one R 10a Substituted or unsubstituted C 1 -C 60 Alkyl group, at least one R 10a Substituted or unsubstituted C 6 -C 60 Aryl group, -N(Q 1 )(Q 2 ), or any combination thereof. 10a , Q 1 and Q 2 The description of is incorporated herein by reference.

[0040] For example, the thiol compound may have a methyl group, an ethyl group, or a C 3 -C 12 Alkyl group, phenyl group, naphthyl group, -NH 2 or any combination thereof.

[0041] According to another embodiment, the carboxylic acid-containing compound is selected from the group consisting of -F, at least one R 10a Substituted or unsubstituted C 1 -C 60 Alkyl group, at least one R 10a Substituted or unsubstituted C 1 -C 60 alkenyl group, at least one R 10a Substituted or unsubstituted C 1 -C 60Alkoxy group, at least one R 10a Substituted or unsubstituted C 6 -C 60 Aryl group, -N(Q 1 )(Q 2 ), or any combination thereof. 10a , Q 1 and Q 2 For the relevant explanation, please refer to the description in this specification.

[0042] For example, the carboxylic acid-containing compound may be -F, a methyl group, an ethyl group, ethylene, acrylic acid, -OCH 3 , phenyl group, naphthyl group, -N(CH 3 ) 2 or any combination thereof.

[0043] According to other embodiments, the first ligand and the second ligand may each independently comprise F, Cl, I, oleic acid, 1-dodecanethiol, 2-ethylhexylthiol, cinnamic acid, 4-methoxycinnamic acid, 4-(dimethylamino)cinnamic acid, benzoic acid, 4-methylbenzoic acid, benzenethiol, 4-methylbenzenethiol, 2,6-difluorocinnamic acid, 3,5-difluorocinnamic acid, 4-(trifluoromethyl)cinnamic acid, 4-aminobenzenethiol, or any combination thereof.

[0044] According to an embodiment, the content ratio of the first quantum dots and the second quantum dots may be from 1:10 to 10:1, from 2:8 to 8:2, or from 3:7 to 7:3.

[0045] [Light emitting element (10)] Hereinafter, a structure and a method for manufacturing a light emitting device 10 according to an embodiment of the present invention will be described with reference to FIG.

[0046] 1 is a schematic cross-sectional view of a light-emitting device 10 according to an embodiment of the present invention. The light-emitting device 10 includes a first electrode 110, an intermediate layer 130, and a second electrode 150.

[0047] [First electrode 110] A substrate may be further disposed under the first electrode 110 or over the second electrode 150 in FIG. The substrate may be a glass substrate or a plastic substrate. Alternatively, the substrate may be a flexible substrate, and may include a plastic having excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphtalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0048] The first electrode 110 may be formed by, for example, providing a first electrode material on the substrate using a deposition method, a sputtering method, etc. When the first electrode 110 is an anode, a high work function material that easily injects holes may be used as the first electrode material.

[0049] The first electrode 110 may be a reflective electrode, a semi-transparent electrode, or a transparent electrode. To form the first electrode 110 as a transparent electrode, the first electrode material may be indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO 2 ), zinc oxide (ZnO), or any combination thereof may be used. Alternatively, to form the first electrode 110, which is a semi-transmissive electrode or a reflective electrode, magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof may be used as the material for the first electrode.

[0050] The first electrode 110 may have a single-layer structure consisting of a single layer or a multi-layer structure including multiple layers, for example, the first electrode 110 may have a three-layer structure of ITO / Ag / ITO.

[0051] [Middle layer 130] The intermediate layer 130 is disposed on the first electrode 110. The intermediate layer 130 includes a light emitting layer.

[0052] The intermediate layer 130 may further include a hole transport region disposed between the first electrode 110 and the light emitting layer, and an electron transport region disposed between the light emitting layer and the second electrode 150.

[0053] In addition to various organic substances, the intermediate layer 130 may further include metal-containing compounds such as organometallic compounds, inorganic substances such as quantum dots, and the like.

[0054] In addition, the intermediate layer 130 may include i) two or more emitting units sequentially stacked between the first electrode 110 and the second electrode 150, and ii) a charge generation layer disposed between the two emitting units. When the intermediate layer 130 includes the emitting units and the charge generation layer as described above, the light emitting device 10 may be a tandem light emitting device.

[0055] [Hole transport region in intermediate layer 130] The hole transport region may have i) a single layer structure consisting of a single layer of a single material, ii) a single layer structure consisting of a single layer containing a plurality of different materials, or iii) a multilayer structure including a plurality of layers containing a plurality of different materials.

[0056] The hole transport region may include a hole injection layer, a hole transport layer, a light-emitting assisting layer, an electron blocking layer, or any combination thereof.

[0057] For example, the hole transport region may have a multilayer structure of a hole injection layer / hole transport layer, a hole injection layer / hole transport layer / light emitting auxiliary layer, a hole injection layer / light emitting auxiliary layer, a hole transport layer / light emitting auxiliary layer, or a hole injection layer / hole transport layer / electron blocking layer, which are stacked in this order from the first electrode 110.

[0058] The hole transport region may include a compound represented by formula 201 below, a compound represented by formula 202 below, or any combination thereof: <Chemical formula 201> [ka] <Chemical formula 202> [ka] In the above chemical formulas 201 and 202, L 201 From L 204 are, independently of each other, at least one R 10a Substituted or unsubstituted C 3 -C 60 A carbocyclic group or at least one R 10a Substituted or unsubstituted C 1 -C 60 is a heterocyclic group, L 205 *-O-*', *-S-*', *-N(Q 201 )-*', at least one R 10a Substituted or unsubstituted C 1 -C 20 an alkylene group, at least one R 10a Substituted or unsubstituted C 2 -C 20 alkenylene group, at least one R 10a Substituted or unsubstituted C 3 -C 60 A carbocyclic group or at least one R 10aSubstituted or unsubstituted C 1 -C 60 is a heterocyclic group, xa1 to xa4 are each independently an integer from 0 to 5; xa5 is an integer between 1 and 10, R 201 From R 204 , and Q201 are each independently selected from at least one R 10a Substituted or unsubstituted C 3 -C 60 A carbocyclic group or at least one R 10a Substituted or unsubstituted C 1 -C 60 is a heterocyclic group, R 201 and R 202 is optionally a single bond, at least one R 10a Substituted or unsubstituted C 1 -C 5 an alkylene group, or at least one R 10a Substituted or unsubstituted C 2 -C 5 are connected to each other via an alkenylene group, and at least one R 10a Substituted or unsubstituted C 8 -C 60 Polycyclic groups (such as carbazole groups) can be formed (see, for example, compound HT16 below), R 203 and R 204 is optionally a single bond, at least one R 10a Substituted or unsubstituted C 1 -C 5 an alkylene group, or at least one R 10a Substituted or unsubstituted C 2 -C 5 are connected to each other via an alkenylene group, and at least one R 10a Substituted or unsubstituted C 8 -C 60 Polycyclic groups can be formed, na1 may be one of the integers from 1 to 4.

[0059] For example, each of the formulas 201 and 202 may include at least one of the groups represented by the following formulas CY201 to CY217: [ka]

[0060] In the chemical formulas CY201 to CY217, R 10b and R 10c The explanation of each of the above is given in this specification as R 10a Please refer to the explanation of the CY 201 From KanCY 204 are independent of each other, C 3 -C 20 Carbocyclic group or C 1 -C 20 A heterocyclic group represented by the formula CY 201 From the chemical formula CY 217 At least one hydrogen of 10a may be substituted or unsubstituted with

[0061] According to one embodiment, the ring CY 201 From KanCY 204 may be, independently of each other, a benzene group, a naphthalene group, a phenanthrene group, or an anthracene group.

[0062] According to another embodiment, each of the formulas 201 and 202 may include at least one of the groups represented by the formulas CY201 to CY203.

[0063] According to yet another embodiment, the formula 201 may include at least one of the groups represented by the formulas CY201 to CY203, and at least one of the groups represented by the formulas CY204 to CY217, respectively.

[0064] According to yet another embodiment, in formula 201, xa1 is 1 and R 201 is a group represented by one of the chemical formulas CY201 to CY203, xa2 is 0, R 202 may be a group represented by one of formulas CY204 to CY207.

[0065] According to yet other embodiments, each of the formulas 201 and 202 may not include any of the groups represented by the formulas CY201 to CY203.

[0066] According to yet another embodiment, each of the formulas 201 and 202 may not include any of the groups represented by the formulas CY201 to CY203, but may include at least one of the groups represented by the formulas CY204 to CY217.

[0067] As yet another example, each of the formulas 201 and 202 may not include any of the groups represented by the formulas CY201 to CY217.

[0068] For example, the hole transport region may include one of the following compounds HT1 through HT46: m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, Spiro-TPD, Spiro-NPB, methylated NPB, TAPC, HMTPD, TCTA (4′,4″-tris(N-carbazolyl)triphenylamine), Pani / DBSA (polyaniline / dodecylbenzenesulfonic acid), PEDOT / PSS (poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate)), Pani / CSA (polyaniline / camphorsulfonic acid), PANI / PSS (polyaniline / poly(4-styrenesulfonate), or any combination thereof: [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka]

[0069] The thickness of the hole transport region may be about 50 Å to about 10,000 Å, for example, about 100 Å to about 4,000 Å. When the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer may be about 100 Å to about 9,000 Å, for example, about 100 Å to about 1,000 Å, and the thickness of the hole transport layer may be about 50 Å to about 2,000 Å, for example, about 100 Å to about 1,500 Å. When the thicknesses of the hole transport region, hole injection layer, and hole transport layer satisfy the above-mentioned ranges, satisfactory hole transport properties can be obtained without a substantial increase in driving voltage.

[0070] The light emitting auxiliary layer is a layer that compensates for the optical resonance distance according to the wavelength of light emitted from the light emitting layer and increases the light emission efficiency, and the electron blocking layer is a layer that prevents electron leakage from the light emitting layer to the hole transport region. The material that can be contained in the hole transport region may be contained in the light emitting auxiliary layer and the electron blocking layer.

[0071] [p-dopant] In addition to the materials described above, the hole transport region may include a charge generating material to improve conductivity. The charge generating material may be uniformly or non-uniformly dispersed (e.g., in the form of a single layer consisting of the charge generating material) within the hole transport region.

[0072] The charge generating material can be, for example, a p-dopant.

[0073] For example, the LUMO energy level of the p-dopant may be below -3.5 eV.

[0074] According to one embodiment, the p-dopant may include a quinone derivative, a cyano group-containing compound, an element EL1-containing compound, and an element EL2-containing compound, or any combination thereof.

[0075] Examples of said quinone derivatives may include TCNQ, F4-TCNQ, and the like.

[0076] Examples of the cyano group-containing compound may include HAT-CN, a compound represented by the following formula 221, and the like. [ka] [ka]

[0077] In the above formula 221, R 221 From R 223are, independently of each other, at least one R 10a Substituted or unsubstituted C 3 -C 60 A carbocyclic group or at least one R 10a Substituted or unsubstituted C 1 -C 60 is a heterocyclic group, R 221 From the above R 223 at least one of the groups is independently selected from the group consisting of a cyano group, -F, -Cl, -Br, -I, a C substituted with a cyano group, -F, -Cl, -Br, -I, or any combination thereof; 1 -C 20 or any combination thereof, 3 -C 60 Carbocyclic group or C 1 -C 60 It may be a heterocyclic group.

[0078] In the compound containing the element EL1 and the compound containing the element EL2, the element EL1 may be a metal, a metalloid, or a combination thereof, and the element EL2 may be a non-metal, a metalloid, or a combination thereof.

[0079] Examples of the metal include alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt ( Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.; post-transition metals (e.g., zinc (Zn), indium (In), tin (Sn), etc.); lanthanide metals (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.); and the like.

[0080] Examples of the metalloid may include silicon (Si), antimony (Sb), tellurium (Te), and the like.

[0081] Examples of said non-metals may include oxygen (O), halogens (eg, F, Cl, Br, I, etc.), and the like.

[0082] For example, the element EL1-containing compound and the element EL2-containing compound may include a metal oxide, a metal halide (e.g., a metal fluoride, a metal chloride, a metal bromide, a metal iodide, etc.), a metalloid halide (e.g., a metalloid fluoride, a metalloid chloride, a metalloid bromide, a metalloid iodide, etc.), a metal telluride, or any combination thereof.

[0083] Examples of the metal oxide include tungsten oxide (e.g., WO, W 2 O 3 , WO 2 , WO 3 , W 2 O 5 ), vanadium oxides (e.g., VO, V 2 O 3 , V.O. 2 , V 2 O 5 etc.), molybdenum oxide (MoO, Mo 2 O 3 , MoO 2 , MoO 3 , Mo 2 O 5 ), rhenium oxides (e.g., ReO 3 etc.) may also be included.

[0084] Examples of the metal halides may include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, lanthanide metal halides, and the like.

[0085] Examples of the alkali metal halides may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, and the like.

[0086] An example of the alkaline earth metal halide is BeF 2 , MgF 2 , CaF 2 , SrF 2 , BaF 2 , BeCl 2 , MgCl 2 , CaCl 2 , SrCl 2 , BaCl 2 , BeBr 2 , MgBr 2 , CaBr 2 , SrBr 2 , BaBr 2 , BeI 2 , MgI2 , CaI 2 , SrI 2 ,BaI 2 etc. may be included.

[0087] Examples of the transition metal halide include titanium halides (e.g., TiF 4 , TiCl 4 , TiBr 4 , TiI 4 etc.), zirconium halides (e.g., ZrF 4 , ZrCl 4 , ZrBr 4 , ZrI 4 etc.), hafnium halides (e.g., HfF 4 , HfCl 4 , HfBr 4 , HfI 4 ), vanadium halides (e.g., VF 3 , VCl 3 , VBr 3 , V.I. 3 etc.), niobium halides (e.g., NbF 3 , NbCl 3 , NbBr 3 , NbI 3 etc.), tantalum halides (e.g., TaF 3 , TaCl 3 , TaBr 3 ,TaI 3 etc.), chromium halides (e.g., CrF 3 , CrCl 3 , CrBr 3 , CrI 3 etc.), molybdenum halides (e.g., MoF 3 , MoCl 3 , MoBr 3 , MoI 3 ), tungsten halides (e.g., WF 3 , WCl 3 , W.B.R. 3 , W.I. 3 etc.), manganese halides (e.g., MnF 2 , MnCl 2 , MnBr 2 , MnI 2), technetium halides (e.g., TcF 2 , TcCl 2 , TcBr 2 , TcI 2 etc.), rhenium halides (e.g., ReF 2 , ReCl 2 , ReBr 2 , ReI 2 etc.), iron halides (e.g., FeF 2 , FeCl 2 , FeBr 2 , FeI 2 etc.), ruthenium halides (e.g., RuF 2 , RuCl 2 , RuBr 2 , RuI 2 ), osmium halides (e.g., OsF 2 , OsCl 2 , OsBr 2 , OsI 2 etc.), cobalt halides (e.g., CoF 2 , CoCl 2 , CoBr 2 , CoI 2 etc.), rhodium halides (e.g., RhF 2 , RhCl 2 , RhBr 2 , RhI 2 etc.), iridium halides (e.g., IrF 2 , IrCl 2 , IrBr 2 , IrI 2 etc.), nickel halides (e.g., NiF 2 , NiCl 2 , NiBr 2 , NiI 2 etc.), palladium halides (e.g., PdF 2 , PdCl 2 , PdBr 2 , PdI 2 etc.), platinum halides (e.g., PtF 2 , PtCl 2 , PtBr 2 , PtI 2etc.), copper halides (e.g., CuF, CuCl, CuBr, CuI, etc.), silver halides (e.g., AgF, AgCl, AgBr, AgI, etc.), gold halides (e.g., AuF, AuCl, AuBr, AuI, etc.), and the like.

[0088] Examples of the post-transition metal halide include zinc halides (e.g., ZnF 2 , ZnCl 2 , ZnBr 2 , ZnI 2 etc.), indium halides (e.g., InI 3 etc.), tin halides (e.g., SnI 2 etc.), etc.

[0089] Examples of the lanthanide metal halides are YbF, YbF 2 , YbF 3 , SmF 3 , YbCl, YbCl 2 , YbCl 3 SmCl 3 , YbBr, YbBr 2 , YbBr 3 SmBr 3 , YbI, YbI 2 , YbI 3 , SmI 3 etc. may be included.

[0090] Examples of the metalloid halides may include antimony halides (e.g., SbCl5, etc.), and the like.

[0091] Examples of the metal tellurides include alkali metal tellurides (e.g., Li 2 Te, Na 2 Te, K 2 Te, Rb 2 Te, Cs 2 Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), transition metal tellurides (e.g., TiTe 2 , ZrTe 2 , HfTe 2 , V2 Te3, Nb 2 Te 3 , Ta 2 Te 3 , Cr 2 Te 3 , Mo 2 Te 3 , W 2 Te 3 , MnTe, TcTe, ReTe, FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu 2 Te, CuTe, Ag 2 Te, AgTe, Au 2 Te, etc.), post-transition metal tellurides (e.g., ZnTe, etc.), lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.), and the like.

[0092] [Light-emitting layer in intermediate layer 130] The light emitting layer may include quantum dots.

[0093] As used herein, quantum dots refer to crystals of semiconductor compounds and may include any material that can emit light of various emission wavelengths depending on the crystal size.

[0094] The quantum dots may have a diameter of, for example, about 1 nm to 10 nm.

[0095] The quantum dots can be synthesized by wet chemical processes, metalorganic chemical vapor deposition processes, molecular beam epitaxy processes, or the like.

[0096] The wet chemical process is a method of growing quantum dot particle crystals after mixing an organic solvent with a precursor material. When the crystals grow, the organic solvent naturally acts as a dispersant coordinated to the surface of the quantum dot crystal, and the growth of the crystals can be controlled by a process that is easier and less expensive than gas phase deposition methods such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE).

[0097] The quantum dots may comprise a II-VI semiconductor compound; a III-V semiconductor compound; a III-VI semiconductor compound; a I-III-VI semiconductor compound; a IV-VI semiconductor compound; a Group IV element or compound thereof; or any combination thereof.

[0098] Examples of the II-VI semiconductor compounds may include binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS; quaternary compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or any combination thereof.

[0099] Examples of the III-V group semiconductor compound may include two-element compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, etc.; three-element compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, etc.; four-element compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, etc.; or any combination thereof. Note that the III-V group semiconductor compound may further include a II group element. Examples of III-V semiconductor compounds further including the Group II element may include InZnP, InGaZnP, InAlZnP, and the like.

[0100] Examples of the III-VI group semiconductor compounds are GaS, GaSe, Ga 2 Se 3 , GaTe, InS, InSe, In 2 S 3 , In 2 Se 3 , InTe and other binary compounds; InGaS 3 , InGaSe 3 or any combination thereof.

[0101] Examples of the I-III-VI group semiconductor compounds include AgInS, AgInS 2 , CuInS, CuInS 2 ,CuGaO 2 , AgGaO 2 , AgAlO 2 or any combination thereof.

[0102] Examples of the IV-VI semiconductor compounds may include binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, PbTe; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe; quaternary compounds such as SnPbSSe, SnPbSeTe, SnPbSTe; or any combination thereof.

[0103] The Group IV elements or compounds thereof may include single element compounds such as Si, Ge, etc.; binary compounds such as SiC, SiGe, etc.; or any combination thereof.

[0104] Each element contained in the multi-element compounds, such as the binary, ternary and quaternary compounds described above, can be present in the particles in a uniform or non-uniform concentration.

[0105] The quantum dots may have a single structure in which the concentration of each element contained in the quantum dot is uniform, or a double structure of a core and shell, for example, the material contained in the core and the material contained in the shell may be different from each other.

[0106] The shell of the quantum dot may act as a protective layer to prevent chemical denaturation of the core and maintain the semiconductor properties, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell may be a single layer or multiple layers. The interface between the core and the shell may have a concentration gradient in which the concentration of the elements present in the shell decreases toward the center.

[0107] Examples of the shell of the quantum dots include oxides of metals, semimetals or nonmetals, semiconductor compounds, or combinations thereof. Examples of the oxides of metals, semimetals or nonmetals include SiO 2 , Al 2 O 3 , TiO 2 , ZnO, MnO, Mn2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 , NiO, and other binary compounds; MgAl 2 O 4 , CoFe 2 O 4 , NiFe 2 O 4 , CoMn 2 O 4 Examples of semiconductor compounds may include II-VI semiconductor compounds, III-V semiconductor compounds, III-VI semiconductor compounds, I-III-VI semiconductor compounds, IV-VI semiconductor compounds, or any combination thereof, as described herein. For example, the semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0108] The quantum dots have a full width of half maximum (FWHW) of the emission wavelength spectrum of about 45 nm or less, specifically about 40 nm or less, more specifically about 30 nm or less, and in this range, the color purity and color reproducibility can be improved. In addition, the light emitted through such quantum dots is emitted in all directions, and the wide viewing angle can be improved.

[0109] The quantum dots may be in the form of spherical, pyramidal, multi-arm or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplatelets, or the like.

[0110] By adjusting the size of the quantum dots, the energy band gap can be adjusted, and thus light of various wavelength bands can be obtained in the quantum dot light emitting layer. Therefore, by using quantum dots of different sizes, a light emitting device that emits light of various wavelengths can be realized. Specifically, the size of the quantum dots can be selected to emit red light, green light, and / or blue light. In addition, the size of the quantum dots can be configured to combine light of various colors to emit white light.

[0111] According to one embodiment, the light emitting layer may comprise the quantum dot composition described above.

[0112] The quantum dot composition includes first and second quantum dots that have the same energy band gap but different energy band positions (e.g., VBM energy levels). Each quantum dot has an energy band position at which it is easy to inject electrons or holes, so that when a light-emitting layer is formed using a quantum dot composition including the first and second quantum dots, the injection of charges (electrons or holes) into the light-emitting layer can be improved. Therefore, a light-emitting device with improved luminous efficiency and life can be provided.

[0113] Referring to FIG. 2, when first and second quantum dots having different energy band positions are used together in an emitting layer, the first and second quantum dots act as steps between the hole transport layer (HTL) and the electron transport layer (ETL) and the emitting layer, and charge injection from the hole transport layer (HTL) and the electron transport layer (ETL) to the emitting layer can be improved.

[0114] The light-emitting layer may be a single quantum dot layer or a stack of two or more quantum dot layers. For example, the light-emitting layer may be a single quantum dot layer or a stack of two to five quantum dot layers.

[0115] The light-emitting layer may further include quantum dots other than those described herein.

[0116] The light-emitting layer may further include a dispersion medium in which the quantum dots are dispersed in a naturally coordinated form, in addition to the quantum dots as described herein. The dispersion medium may include an organic solvent, a polymer resin, or any combination thereof. Any transparent medium that does not affect the optical performance of the quantum dots, is not altered by light, does not reflect light, and does not absorb light may be used. For example, the organic solvent may include toluene, chloroform, ethanol, hexane, or any combination thereof, and the polymer resin may include epoxy resin, silicone resin, polystyrene resin, acrylate resin, or any combination thereof.

[0117] The light-emitting layer may be formed by applying a composition for forming a light-emitting layer including quantum dots onto a hole transport region and volatilizing at least a portion of the solvent contained in the composition for forming a light-emitting layer.

[0118] For example, the solvent may be water, hexane, chloroform, toluene, or octane.

[0119] The composition for forming the light emitting layer may be applied by using a spin coating method, a casting method, a micro gravure coating method, a gravure coating method, a bar coating method, a roll coating method, a wire bar coating method, a dip coating method, a spray coating method, a screen printing method, a flexographic printing method, an offset printing method, an inkjet printing method, or the like.

[0120] When the light emitting element 10A is a full color light emitting element, the light emitting layer 150 may include light emitting layers that emit different colors for each individual subpixel.

[0121] For example, the light-emitting layer 150 may be patterned into a first color light-emitting layer, a second color light-emitting layer, and a third color light-emitting layer for each individual subpixel. At this time, at least one of the light-emitting layers may necessarily include quantum dots. Specifically, the first color light-emitting layer may be a quantum dot light-emitting layer including quantum dots, and the second color light-emitting layer and the third color light-emitting layer may be organic light-emitting layers including organic compounds. Here, the first color to the third color may be different from each other, specifically, the first color to the third color may have different maximum emission wavelengths from each other. The first color to the third color may be combined with each other to form white.

[0122] As another example, the light emitting layer may further include a fourth color light emitting layer, and at least one of the first to fourth color light emitting layers may be a quantum dot light emitting layer containing quantum dots, and the remaining light emitting layers may be organic light emitting layers containing organic compounds, and various modifications are possible. Here, the first to fourth colors may be different colors from each other, and specifically, the first to fourth colors may have different maximum emission wavelengths from each other. The first to fourth colors may be combined with each other to form white.

[0123] Alternatively, the light emitting device 10 may have a structure in which two or more light emitting layers emitting the same or different colors are stacked in contact with or spaced apart from each other. At least one of the two or more light emitting layers may be a quantum dot light emitting layer containing quantum dots, and the remaining light emitting layers may be organic light emitting layers containing organic compounds, and various modifications are possible. Specifically, the light emitting device 10 includes a first color light emitting layer and a second color light emitting layer, and the first color and the second color may be the same color or different colors. More specifically, the first color and the second color may both be blue.

[0124] The light-emitting layer may further include at least one selected from an organic compound and a semiconductor compound in addition to the quantum dots.

[0125] Specifically, the organic compound may include a host and a dopant. The host and the dopant may include hosts and dopants that are commonly used in organic light-emitting devices.

[0126] In particular, the semiconducting compound may be an organic perovskite and / or an inorganic perovskite.

[0127] [Electron transport region in intermediate layer 130] The electron transport region may have i) a monolayer structure consisting of a single layer of a single material, ii) a monolayer structure consisting of a single layer containing a plurality of different materials, or iii) a multilayer structure including multiple layers containing a plurality of different materials.

[0128] The electron transport region may include a buffer layer, a hole blocking layer, an electron modulating layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0129] For example, the electron transport region may have a structure such as an electron transport layer / electron injection layer, a hole blocking layer / electron transport layer / electron injection layer, an electron control layer / electron transport layer / electron injection layer, or a buffer layer / electron transport layer / electron injection layer, which are stacked in this order from the light emitting layer.

[0130] The electron transport region may include a metal oxide, and the metal of the metal oxide may include Zn, Ti, Zr, Sn, W, Ta, Ni, Mo, Cu, Mg, Co, Mn, Y, Al, or any combination thereof, or may include a metal sulfide, such as CuSCN.

[0131] The electron transport region (e.g., the electron injection layer or the electron transport layer in the electron transport region) may include a metal oxide represented by Formula 3: <Chemical formula 3> MpOq In the above Chemical Formula 3, M is Zn, Ti, Zr, Sn, W, Ta, Ni, Mo, Cu or V; p and q are each independently an integer of 1 or 5;

[0132] The third compound may be represented by the following formula 3-1: <Chemical formula 3-1> Zinc (1-r) M' r O In the above Chemical Formula 3-1, M' is Mg, Co, Ni, Zr, Mn, Sn, Y, Al, or any combination thereof; r is a number greater than 0 and equal to or less than 0.5.

[0133] According to one embodiment, the electron transport region may include ZnO or ZnMgO, for example.

[0134] For example, the electron transport region may be made of ZnO, TiO 2 , WO 3 , SnO 2 , In 2 O3 , Nb 2 O 5 , Fe 2 O 3 , CEO 2 , SrTiO 3 , Zn 2 SnO 4 , BaSnO 3 , In 2 S 3 , ZnSiO, PC60BM, PC70BM, Mg-doped ZnO (ZnMgO), Al-doped ZnO (AZO), Ga-doped ZnO (GZO), In-doped ZnO (IZO), Al-doped TiO 2 , Ga-doped TiO 2 , In-doped TiO 2 , Al-doped WO 3 , Ga-doped WO 3 , In-doped WO 3 , Al-doped SnO 2 , Ga-doped SnO 2 , In-doped SnO 2 , Mg-doped In 2 O 3 , Al doped In 2 O 3 , Ga doped In 2 O 3 , Mg doped Nb 2 O 5 , Al doped Nb 2 O 5 , Ga doped Nb 2 O 5 , Mg doped Fe 2 O 3 , Al-doped Fe 2 O 3 , Ga doped Fe 2 O 3 , In-doped Fe 2 O 3 , Mg-doped CeO 2 , Al-doped CeO 2 , Ga-doped CeO2 , In-doped CeO 2 , Mg-doped SrTiO 3 , Al-doped SrTiO 3 , Ga doped SrTiO 3 , In-doped SrTiO 3 , Mg doped Zn 2 SnO 4 , Al doped Zn 2 SnO 4 , Ga doped Zn 2 SnO 4 , In-doped Zn 2 SnO 4 , Mg-doped BaSnO 3 , Al-doped BaSnO 3 , Ga doped BaSnO 3 , In-doped BaSnO 3 , Mg-doped In 2 S 3 , Al doped In 2 S 3 , Ga doped In 2 S 3 , In-doped In 2 S 3 , Mg-doped ZnSiO, Al-doped ZnSiO, Ga-doped ZnSiO, In-doped ZnSiO, or any combination thereof.

[0135] The electron transport region (e.g., a buffer layer, a hole blocking layer, an electron modulating layer, or an electron transport layer in the electron transport region) is at least one π-electron deficient nitrogen-containing C 1 -C 60 Cyclic group (π electron-deficient nitrogen-containing C 1 -C 60 The metal-free compounds may include those containing a metal cyclic group.

[0136] The electron transport region (e.g., a buffer layer, a hole blocking layer, an electron modulating layer, or an electron transport layer in the electron transport region) is at least one π-electron deficient nitrogen-containing C 1 -C 60 Cyclic group (π electron-deficient nitrogen-containing C 1 -C 60 The metal-free compounds may include those containing a metal cyclic group.

[0137] For example, the electron transport region may include a compound represented by formula 601 below: <Chemical formula 601> [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21 In the formula 601, Ar 601 and L 601 are, independently of each other, at least one R 10a Substituted or unsubstituted C 3 -C 60 A carbocyclic group or at least one R 10a Substituted or unsubstituted C 1 -C 60 is a heterocyclic group, xe11 is 1, 2 or 3, xe1 is 0, 1, 2, 3, 4 or 5, R 601 At least one R 10a Substituted or unsubstituted C 3 -C 60 Carbocyclic group, at least one R 10a Substituted or unsubstituted C 1 -C 60 Heterocyclic group, -Si(Q 601 )(Q 602 )(Q 603 ), -C(=O)(Q 601 ), -S(=O) 2 (Q 601), or -P(=O)(Q 601 )(Q 602 ) and Q 601 From the above Q 603 The explanations of Q 1 Refer to the explanation of xe21 is 1, 2, 3, 4 or 5, The aforementioned Ar 601 , L 601 and R 601 At least one of the groups, independently of each other, is selected from the group consisting of at least one R 10a Substituted or unsubstituted π-electron deficient nitrogen-containing C 1 -C 60 It may be a cyclic group.

[0138] For example, in the above formula 601, when xe11 is 2 or more, 2 or more Ar 601 may be linked to each other via a single bond.

[0139] As another example, in formula 601, Ar 601 may be a substituted or unsubstituted anthracene group.

[0140] As yet another example, the electron transport region may include a compound represented by formula 601-1: <Chemical formula 601-1> [ka] In the above formula 601-1, X 614 is N or C(R 614 ) and X 615 is N or C(R 615 ) and X 616 is N or C(R 616 ) and X 614 From X 616 At least one of is N, L 611 From L 613 The explanation of each is given in the above L 601Refer to the explanation of For the explanation of xe611 to xe613, please refer to the explanation of xe1 above. R 611 From R 613 The explanation of each is given in the above R 601 Refer to the explanation of R 614 From R 616 are each independently hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, C 1 -C 20 Alkyl group, C 1 -C 20 Alkoxy group, at least one R 10a Substituted or unsubstituted C 3 -C 60 A carbocyclic group or at least one R 10a Substituted or unsubstituted C 1 -C 60 It may be a heterocyclic group.

[0141] For example, in formulae 601 and 601-1, xe1, and xe611 through xe613 may be 0, 1, or 2, independently of one another.

[0142] The electron transport region may be one of the following compounds ET1 to ET45, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq 3 , BAlq, TAZ, NTAZ, or any combination thereof: [ka] [ka] [ka] [ka] [ka] [ka] [ka]

[0143] The thickness of the electron transport region may be about 100 Å to about 5,000 Å, for example, about 160 Å to about 4,000 Å. When the electron transport region includes a buffer layer, a hole blocking layer, an electron modulating layer, an electron transport layer, or any combination thereof, the thickness of the buffer layer, the hole blocking layer, or the electron modulating layer may be, independently of one another, about 20 Å to about 1,000 Å, for example, about 30 Å to about 300 Å, and the thickness of the electron transport layer may be about 100 Å to about 1,000 Å, for example, about 150 Å to about 500 Å. When the thicknesses of the buffer layer, the hole blocking layer, the electron modulating layer, the electron transport layer, and / or the electron transport region satisfy the above-mentioned ranges, satisfactory electron transport properties can be obtained without a substantial increase in driving voltage.

[0144] The electron transport region (eg, the electron transport layer in the electron transport region) may further include a metal-containing material in addition to the materials described above.

[0145] The metal-containing material may include an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The metal ion of the alkali metal complex may be Li ion, Na ion, K ion, Rb ion, or Cs ion, and the metal ion of the alkaline earth metal complex may be Be ion, Mg ion, Ca ion, Sr ion, or Ba ion. The ligands coordinated to the metal ions of the alkali metal complex and the alkaline earth metal complex may each independently include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0146] For example, the metal-containing material may include a Li complex. The Li complex may include, for example, the following compound ET-D1 (LiQ) or ET-D2: [ka]

[0147] The electron transport region also includes an electron injection layer that facilitates electron injection from the second electrode 150. The electron injection layer may be in direct contact with the second electrode 150.

[0148] The electron injection layer may have i) a single layer structure consisting of a single layer made of a single material, ii) a single layer structure consisting of a single layer containing a plurality of different materials, or iii) a multilayer structure having a plurality of layers containing a plurality of different materials.

[0149] The electron injection layer may contain an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

[0150] The alkali metal may include Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metal may include Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metal may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0151] The alkali metal-containing compound, the alkaline earth metal-containing compound, and the rare earth metal-containing compound may each include an oxide, a halide (e.g., fluoride, chloride, bromide, iodide, etc.), a telluride, or any combination thereof of the alkali metal, the alkaline earth metal, and the rare earth metal.

[0152] The alkali metal-containing compound is Li 2 O, Cs 2 O, K 2 O such as alkali metal oxides; alkali metal halides such as LiF, NaF, CsF, KF, LiI, NaI, CsI, KI; or any combination thereof. The alkaline earth metal-containing compound may include alkaline earth metal compounds such as BaO, SrO, CaO, Ba x Sr 1-x O (x is a real number satisfying 0 < x < 1), Ba x Ca 1-x O (x is a real number satisfying 0 < x < 1), etc. The rare earth metal-containing compound may include YbF 3 , ScF 3 , Sc 2 O 3 , Y 2 O 3 , Ce 2 O 3 , GdF 3 , TbF 3 , YbI 3 , ScI3 , TbI 3 Or, the rare earth metal-containing compound may include a lanthanide metal telluride. Examples of the lanthanide metal tellurides include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La 2 Te 3 , Ce 2 Te 3 ,Pr 2 Te 3 , Nd 2 Te 3 , Pm 2 Te 3 , Sm 2 Te 3 ,EU 2 Te 3 , Gd 2 Te 3 , Tb 2 Te 3 , Dy 2 Te 3 , Ho 2 Te 3 , Er 2 Te 3 , Tm 2 Te 3 , Yb 2 Te 3 , Lu 2 Te 3 etc. may be included.

[0153] The alkali metal complex, alkaline earth metal complex, and rare earth metal complex may include i) one of the alkali metal, alkaline earth metal, and rare earth metal ions as described above, and ii) a ligand bonded to the metal ion, such as, for example, hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0154] The electron injection layer may consist solely of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof, as described above, or may further include an organic material (e.g., a compound represented by chemical formula 601 above).

[0155] According to one embodiment, the electron injection layer can consist of i) an alkali metal-containing compound (e.g., an alkali metal halide) or ii) a) an alkali metal-containing compound (e.g., an alkali metal halide) and b) an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof. For example, the electron injection layer can be a KI:Yb co-deposition layer, a RbI:Yb co-deposition layer, a LiF:Yb co-deposition layer, etc.

[0156] When the electron injection layer further comprises an organic material, the alkali metal, alkaline earth metal, rare earth metal, alkali metal-containing compound, alkaline earth metal-containing compound, rare earth metal-containing compound, alkali metal complex, alkaline earth metal complex, rare earth metal complex, or any combination thereof may be uniformly or non-uniformly dispersed in a matrix containing the organic material.

[0157] The thickness of the electron injection layer may be about 1 Å to about 100 Å, or about 3 Å to about 90 Å. When the thickness of the electron injection layer satisfies the above range, satisfactory electron injection characteristics can be obtained without a substantial increase in driving voltage.

[0158] [Second electrode 150] The second electrode 150 is disposed on the intermediate layer 130. The second electrode 150 may be a cathode, which is an electron injection electrode. In this case, the material for the second electrode 150 may be a metal, an alloy, a conductive compound, or any combination thereof having a low work function.

[0159] The second electrode 150 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or any combination thereof. The second electrode 150 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0160] The second electrode 150 may have a single-layer structure having a single layer, or a multi-layer structure having multiple layers.

[0161] [Capping layer] A first capping layer may be disposed on the outer side of the first electrode 110, and / or a second capping layer may be disposed on the outer side of the second electrode 150. Specifically, the light emitting device 10 may have a structure in which the first capping layer, the first electrode 110, the intermediate layer 130, and the second electrode 150 are stacked in this order, a structure in which the first electrode 110, the intermediate layer 130, the second electrode 150, and the second capping layer are stacked in this order, or a structure in which the first capping layer, the first electrode 110, the intermediate layer 130, the second electrode 150, and the second capping layer are stacked in this order.

[0162] Light generated in the light-emitting layer in the intermediate layer 130 of the light-emitting element 10 may be extracted to the outside via the first electrode 110, which is a semi-transparent electrode or a transparent electrode, and the first capping layer, and light generated in the light-emitting layer in the intermediate layer 130 of the light-emitting element 10 may be extracted to the outside via the second electrode 150, which is a semi-transparent electrode or a transparent electrode, and the second capping layer.

[0163] The first and second capping layers may play a role in improving the external light emitting efficiency according to the principle of constructive interference, thereby increasing the light extraction efficiency of the light emitting device 10 and improving the light emitting efficiency of the light emitting device 10.

[0164] The first capping layer and the second capping layer may each comprise a material having a refractive index (at 589 nm) of 1.6 or greater.

[0165] The first capping layer and the second capping layer may be, independently of each other, an organic capping layer containing an organic material, an inorganic capping layer containing an inorganic material, or an organic-inorganic composite capping layer containing an organic material and an inorganic material.

[0166] At least one of the first capping layer and the second capping layer may, independently of one another, comprise a carbocyclic compound, a heterocyclic compound, an amine group-containing compound, a porphine derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, the heterocyclic compound, and the amine group-containing compound may be optionally substituted with a substituent including O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. According to an embodiment, at least one of the first capping layer and the second capping layer may, independently of one another, comprise an amine group-containing compound.

[0167] For example, at least one of the first capping layer and the second capping layer may, independently of each other, comprise a compound represented by formula 201, a compound represented by formula 202, or any combination thereof.

[0168] According to other embodiments, at least one of the first capping layer and the second capping layer may comprise, independently of one another, one of the compounds HT28 to HT33, one of the compounds CP1 to CP6 below, β-NPB, or any compound thereof: [ka] [ka]

[0169] [Electronic equipment] The light-emitting element may be included in various electronic devices, for example, a light-emitting device, an authentication device, etc.

[0170] The electronic device (e.g., light-emitting device) may further include i) a color filter, ii) a color conversion layer, or iii) a color filter and a color conversion layer in addition to the light-emitting element. The color filter and / or the color conversion layer may be disposed in at least one traveling direction of light emitted from the light-emitting element. For example, the light emitted from the light-emitting element may be blue light or white light. For the description of the light-emitting element, please refer to the above. According to one embodiment, the color conversion layer may include quantum dots. The quantum dots may be, for example, quantum dots as described herein.

[0171] The electronic device may include a first substrate, the first substrate may include a plurality of sub-pixel regions, the color filter may include a plurality of color filter regions corresponding to the plurality of sub-pixel regions, and the color conversion layer may include a plurality of color conversion regions corresponding to the plurality of sub-pixel regions.

[0172] A pixel defining layer is disposed between the plurality of sub-pixel regions to define each of the sub-pixel regions.

[0173] The color filter may further include a plurality of color filter regions and a light-shielding pattern disposed between the plurality of color filter regions, and the color conversion layer may further include a plurality of color conversion regions and a light-shielding pattern disposed between the plurality of color conversion regions.

[0174] The color filter regions (or the color conversion regions) include a first region that emits a first color light, a second region that emits a second color light, and / or a third region that emits a third color light, and the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths. For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. For example, the color filter regions (or the color conversion regions) may include quantum dots. Specifically, the first region includes red quantum dots, the second region includes green quantum dots, and the third region does not include quantum dots. For an explanation of the quantum dots, please refer to the description in this specification. The first region, the second region, and / or the third region may each further include a scatterer.

[0175] For example, the light emitting element may emit a first light, the first region may absorb the first light and emit a 1-1 color light, the second region may absorb the first light and emit a 2-1 color light, and the third region may absorb the first light and emit a 3-1 color light. In this case, the 1-1 color light, the 2-1 color light, and the 3-1 color light may have different maximum emission wavelengths. Specifically, the first light may be blue light, the 1-1 color light may be red light, the 2-1 color light may be green light, and the 3-1 color light may be blue light.

[0176] The electronic device may further include a thin film transistor in addition to the light emitting element as described above. The thin film transistor may include a source electrode, a drain electrode, and an active layer, and one of the source electrode and the drain electrode may be electrically connected to one of the first electrode and the second electrode of the light emitting element.

[0177] The thin film transistor may further include a gate electrode and a gate insulating film.

[0178] The active layer may include crystalline silicon, amorphous silicon, an organic semiconductor, an oxide semiconductor, or the like.

[0179] The electronic device may further include a sealing part for sealing the light emitting element. The sealing part may be disposed between the color filter and / or color conversion layer and the light emitting element. The sealing part allows light from the light emitting element to be extracted to the outside while simultaneously blocking the penetration of outside air and moisture into the light emitting element. The sealing part may be a sealing substrate including a transparent glass substrate or a plastic substrate. The sealing part may be a thin film sealing layer including one or more organic layers and / or inorganic layers. When the sealing part is a thin film sealing layer, the electronic device may be flexible.

[0180] In addition to the color filter and / or color conversion layer, various functional layers may be further disposed on the sealing part depending on the application of the electronic device. The functional layers may include a touch screen layer, a polarizing layer, etc. The touch screen layer may be a vacuum touch screen layer, an electrostatic touch screen layer, or an infrared touch screen layer.

[0181] The authentication device may further include a biometric information collecting means in addition to the light-emitting element as described above. The authentication device may be, for example, a biometric authentication device that uses biometric information of a living body (for example, a fingertip, an eye, etc.) to authenticate an individual.

[0182] The electronic device may be applied to various displays, light sources, lighting, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic organizers, electronic dictionaries, electronic game consoles, medical equipment (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram display devices, ultrasonic diagnostic devices, and endoscope display devices), fish finders, various measuring instruments, gauges (e.g., gauges for vehicles, aircraft, and ships), projectors, and the like.

[0183] [Explanation regarding Figures 3 and 4] FIG. 3 is a cross-sectional view of a light emitting device according to one embodiment of the present invention.

[0184] The light emitting device of FIG. 3 includes a substrate 100, a thin film transistor (TFT), a light emitting element, and an encapsulant 300 that seals the light emitting element.

[0185] The substrate 100 may be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer 210 may be disposed on the substrate 100. The buffer layer 210 may serve to prevent impurities from penetrating through the substrate 100 and provide a flat surface on the upper surface of the substrate 100.

[0186] A thin film transistor (TFT) may be disposed on the buffer layer 210. The thin film transistor (TFT) may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.

[0187] The active layer 220 includes an inorganic semiconductor, an organic semiconductor, or an oxide semiconductor, such as silicon or polysilicon, and includes a source region, a drain region, and a channel region.

[0188] A gate insulating film 230 for insulating the active layer 220 from a gate electrode 240 may be disposed on the active layer 220 , and the gate electrode 240 may be disposed on the gate insulating film 230 .

[0189] An interlayer insulating film 250 may be disposed on the gate electrode 240. The interlayer insulating film 250 is disposed between the gate electrode 240 and the source electrode 260, and between the gate electrode 240 and the drain electrode 270, and serves to insulate them.

[0190] A source electrode 260 and a drain electrode 270 may be disposed on the interlayer insulating film 250. The interlayer insulating film 250 and the gate insulating film 230 may be formed to expose a source region and a drain region of the active layer 220, and the source electrode 260 and the drain electrode 270 may be disposed to contact the exposed source region and drain region of the active layer 220.

[0191] Such a thin film transistor (TFT) is electrically connected to the light emitting element to drive the light emitting element, and is covered and protected by a passivation layer 280. The passivation layer 280 may include an inorganic insulating film, an organic insulating film, or a combination thereof. A light emitting element is provided on the passivation layer 280. The light emitting element includes a first electrode 110, an intermediate layer 130, and a second electrode 150.

[0192] The first electrode 110 may be disposed on a passivation layer 280. The passivation layer 280 may be disposed so as not to cover the entire drain electrode 270 but to expose a predetermined region, and the first electrode 110 may be disposed so as to be connected to the exposed drain electrode 270.

[0193] A pixel defining layer 290 including an insulator may be disposed on the first electrode 110. The pixel defining layer 290 may expose a predetermined region of the first electrode 110, and the intermediate layer 130 may be formed on the exposed region. The pixel defining layer 290 may be a polyimide-based or polyacrylic-based organic film. Although not shown in FIG. 2, some or more layers of the intermediate layer 130 may be extended onto the pixel defining layer 290 and disposed in the form of a common layer.

[0194] A second electrode 150 may be disposed on the intermediate layer 130, and a capping layer 170 may be further formed on the second electrode 150. The capping layer 170 may be formed to cover the second electrode 150.

[0195] An encapsulant 300 may be disposed on the capping layer 170. The encapsulant 300 is disposed on the light emitting device and serves to protect the light emitting device from moisture and oxygen. The encapsulant 300 is made of silicon nitride (SiN x ), silicon oxide (SiO x ), indium tin oxide, indium zinc oxide, or any combination thereof; organic films including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sorbonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resins (e.g., polymethyl methacrylate, polyacrylic acid, etc.), epoxy resins (e.g., AGE (aliphatic glycidyl ether), etc.), or any combination thereof, or a combination of an inorganic film and an organic film.

[0196] FIG. 4 is a cross-sectional view of a light emitting device according to another embodiment of the present invention.

[0197] The light emitting device of Fig. 4 is the same as the light emitting device of Fig. 2, except that a light blocking pattern 500 and a functional region 400 are further disposed on the upper part of the encapsulation part 300. The functional region 400 may be i) a color filter region, ii) a color conversion region, or iii) a combination of a color filter region and a color conversion region. According to an embodiment, the light emitting element included in the light emitting device of Fig. 3 may be a tandem light emitting element.

[0198] [Manufacturing method] Each layer included in the hole transport region, the light emitting layer, and the electron transport region may be formed in a predetermined region using various methods such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) method, inkjet printing, laser printing, laser induced thermal imaging (LITI), etc. For example, the light emitting layer may be formed by inkjet printing.

[0199] When each layer included in the hole transport region, the light emitting layer, and each layer included in the electron transport region are formed by vacuum deposition, the deposition conditions are, for example, a deposition temperature of about 100 to about 500° C., a deposition temperature of about 10 -8 About 10 -3 The vacuum level of torr and the deposition rate within the range of about 0.01 to about 100 Å / sec can be selected taking into consideration the material contained in the layer to be formed and the structure of the layer to be formed.

[0200] [Terminology definition] In this specification, C 3 -C 60 A carbocyclic group is a ring-forming group having 3 to 60 carbon atoms, the ring atoms of which are all carbon atoms. 1 -C 60 The heterocyclic group means a cyclic group having 1 to 60 carbon atoms and further containing a heteroatom as a ring-forming atom in addition to carbon. 3 -C 60 Carbocyclic groups and C1 -C 60 Each heterocyclic group may be a monocyclic group consisting of one ring, or a polycyclic group in which two or more rings are fused together. 1 -C 60 The heterocyclic group may have 3 to 61 ring atoms.

[0201] As used herein, a cyclic group is defined as a C 3 -C 60 Carbocyclic groups and C 1 -C 60 Any heterocyclic group is included.

[0202] In this specification, π-electron excess C 3 -C 60 Cyclic group (π electron-rich C 3 -C 60 A cyclic group is a ring-forming moiety that does not contain *-N=*' and has 3 to 60 carbon atoms. 1 -C 60 Cyclic group (π electron-deficient nitrogen-containing C 1 -C 60 The term "cyclic group" refers to a ring-forming moiety and means a heterocyclic group having 1 to 60 carbon atoms containing *-N=*'.

[0203] for example, Said C 3 -C 60The carbocyclic group may be i) a group T1, or ii) a fused ring group in which two or more groups T1 are fused to each other (e.g., a cyclopentadiene group, an adamantane group, a norbornane group, a benzene group, a pentalene group, a naphthalene group, an azulene group, an indacene group, an acenaphthylene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a perylene group, a pentaphene group, a heptalene group, a naphthacene group, a picene group, a hexacene group, a pentacene group, a rubicene group, a coronene group, an ovalene group, an indene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, an indenophenanthrene group, or an indenoanthracene group); Said C 1 -C 60The heterocyclic group is i) a group T2, ii) a fused ring group in which two or more groups T2 are fused to each other, or iii) a fused ring group in which one or more groups T2 and one or more groups T1 are fused to each other (e.g., a pyrrole group, a thiophene group, a furan group, an indole group, a benzoindole group, a naphthoindole group, an isoindole group, a benzoisoindole group, a naphthoindole group, a benzosilole group, a benzothiophene group, a benzofuran group, a carbazole group, a dibenzosilole group, a dibenzothiophene group, a dibenzofuran group, an indenocarbazole group, an indolocarbazole group, a benzofurocarbazole group, a benzothienocarbazole group, a benzosilolocarbazole group, a benzoindolocarbazole group, a benzocarbazole group, a benzonaphthofuran group, a benzonaphthothiophene group, a benzonaphthosilole group, a benzofurodibenzofuran group, a benzofurodibenzothiophene group, a benzothienodibenzo A thiophene group, a pyrazole group, an imidazole group, a triazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, a benzopyrazole group, a benzimidazole group, a benzoxazole group, a benzoisoxazole group, a benzothiazole group, a benzoisothiazole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, a quinoline group, an isoquinoline group, a benzoquinoline group, a a phosphorus group, a benzoisoquinoline group, a quinoxaline group, a benzoquinoxaline group, a quinazoline group, a benzoquinazoline group, a phenanthroline group, a cinnoline group, a phthalazine group, a naphthyridine group, an imidazopyridine group, an imidazopyrimidine group, an imidazotriazine group, an imidazopyrazine group, an imidazopyridazine group, an azacarbazole group, an azafluorene group, an azadibenzosilole group, an azadibenzothiophene group, an azadibenzofuran group, or the like), The π-electron excess C 3 -C 60 The cyclic group is i) a group T1, ii) a fused ring group in which two or more groups T1 are fused to each other, iii) a group T3, iv) a fused ring group in which two or more groups T3 are fused to each other, or v) a fused ring group in which one or more groups T3 and one or more groups T1 are fused to each other (for example, the above-mentioned C 3 -C60 a carbocyclic group, a 1H-pyrrole group, a silole group, a borole group, a 2H-pyrrole group, a 3H-pyrrole group, a thiophene group, a furan group, an indole group, a benzoindole group, a naphthoindole group, an isoindole group, a benzisoindole group, a naphthoindole group, a benzosilole group, a benzothiophene group, a benzofuran group, a carbazole group, a dibenzosilole group, a dibenzothiophene group, a dibenzofuran group, an indenocarbazole group, an indolocarbazole group, a benzofurocarbazole group, a benzothienocarbazole group, a benzosilolocarbazole group, a benzoindolocarbazole group, a benzocarbazole group, a benzonaphthofuran group, a benzonaphthothiophene group, a benzonaphthosilole group, a benzofurodibenzofuran group, a benzofurodibenzothiophene group, a benzothienodibenzothiophene group, etc.), The π-electron-deficient nitrogen-containing C 1 -C 60The cyclic group is i) a group T4, ii) a fused ring group in which two or more groups T4 are fused to each other, iii) a fused ring group in which one or more groups T4 and one or more groups T1 are fused to each other, iv) a fused ring group in which one or more groups T4 and one or more groups T3 are fused to each other, or v) a fused ring group in which one or more groups T4, one or more groups T1, and one or more groups T3 are fused to each other (e.g., a pyrazole group, an imidazole group, a triazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, a benzopyrazole group, a benzimidazole group, a benzoxazole group, benzisoxazole group, benzothiazole group, benzisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzoquinoline group, benzoisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazoline group, benzoquinazoline group, phenanthroline group, cinnoline group, phthalazine group, naphthyridine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzosilole group, azadibenzothiophene group, azadibenzofuran group, etc.), The group T1 may be a cyclopropane group, a cyclobutane group, a cyclopentane group, a cyclohexane group, a cycloheptane group, a cyclooctane group, a cyclobutene group, a cyclopentene group, a cyclopentadiene group, a cyclohexene group, a cyclohexadiene group, a cycloheptene group, an adamantane group, a norbornane (or a bicyclo[2.2.1]heptane) group, a norbornene group, a bicyclo[1.1.1]pentane group, a bicyclo[2.1.1]hexane group, a bicyclo[2.2.2]octane group, or a benzene group; The group T2 may be a furan group, a thiophene group, a 1H-pyrrole group, a silole group, a borole group, a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azasilole group, an azaborole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, a tetrazine group, a pyrrolidine group, an imidazolidine group, a dihydropyrrole group, a piperidine group, a tetrahydrolysine group, a dihydropyridine group, a hexahydropyrimidine group, a tetrahydropyrimidine group, a dihydropyrimidine group, a piperazine group, a tetrahydrorazine group, a dihydropyrazine group, a tetrahydropyridazine group or a dihydropyridazine group; The group T3 may be a furan group, a thiophene group, a 1H-pyrrole group, a silole group or a borole group; The group T4 may be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azasilole group, an azaborole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group or a tetrazine group.

[0204] As used herein, the cyclic group, C 3 -C 60 carbocyclic group, C 1 -C 60 Heterocyclic groups, π-electron-rich C 3 -C 60 Cyclic group or π-electron deficient nitrogen-containing C 1 -C 60 The term "cyclic group" may refer to a group fused to any cyclic group, a monovalent group, or a polyvalent group (e.g., a divalent group, a trivalent group, a tetravalent group, etc.) depending on the structure of the chemical formula in which the term is used. For example, a "benzene group" may be a benzo group, a phenyl group, a phenylene group, etc., which can be easily understood by a person skilled in the art based on the structure of the chemical formula containing the "benzene group".

[0205] For example, monovalent C 3 -C 60 Carbocyclic groups and monovalent C 1 -C 60 Examples of heterocyclic groups are C 3 -C 10 Cycloalkyl groups, C 1 -C 10 Heterocycloalkyl groups, C 3 -C 10 Cycloalkenyl group, C 1 -C 10 Heterocycloalkenyl group, C 6 -C 60 Aryl group, C 1 -C 60 including heteroaryl groups, monovalent non-aromatic condensed polycyclic groups and monovalent non-aromatic condensed heteropolycyclic groups, 3 -C 60 Carbocyclic groups and monovalent C 1 -C 60 Examples of heterocyclic groups are C 3 -C 10 Cycloalkylene group, C 1 -C 10 Heterocycloalkylene group, C 3 -C 10 Cycloalkenylene group, C 1 -C 10 Heterocycloalkenylene group, C 6 -C 60 Arylene group, C 1 -C 60 It also includes heteroarylene groups, divalent non-aromatic fused polycyclic groups, and substituted or unsubstituted divalent non-aromatic fused polycyclic heterocyclic groups.

[0206] In this specification, C 1 -C 60The alkyl group means a linear or branched aliphatic hydrocarbon monovalent group having 1 to 60 carbon atoms, and specific examples thereof include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, an n-pentyl group, a tert-pentyl group, a neopentyl group, an isopentyl group, a sec-pentyl group, a 3-pentyl group, a sec-isopentyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, an n-heptyl group, an isoheptyl group, a sec-heptyl group, a tert-heptyl group, an n-octyl group, an isooctyl group, a sec-octyl group, a tert-octyl group, an n-nonyl group, an isononyl group, a sec-nonyl group, a tert-nonyl group, an n-decyl group, an isodecyl group, a sec-decyl group, a tert-decyl group, and the like. In this specification, C 1 -C 60 The alkylene group is 1 -C 60 It refers to a divalent group having the same structure as an alkyl group.

[0207] In this specification, C 2 -C 60 The alkenyl group is C 2 -C 60 It means a monovalent hydrocarbon group containing one or more carbon-carbon double bonds in the middle or at the end of the alkyl group, and specific examples thereof include an ethenyl group, a propenyl group, and a butenyl group. 2 -C 60 The alkenylene group is 2 -C 60 It means a divalent group having the same structure as an alkenyl group.

[0208] In this specification, C 2 -C 60 The alkynyl group is C 2 -C 60 It means a monovalent hydrocarbon group containing one or more carbon-carbon triple bonds in the middle or at the end of the alkyl group, and specific examples thereof include an ethynyl group, a propynyl group, etc. 2 -C 60The alkynylene group is 2 -C 60 It means a divalent group having the same structure as an alkynyl group.

[0209] In this specification, C 1 -C 60 The alkoxy group is -OA. 101 (Here, A 101 C 1 -C 60 Specific examples of the aryl group include methoxy, ethoxy, and isopropyloxy groups.

[0210] In this specification, C 3 -C 10 The cycloalkyl group means a monovalent saturated hydrocarbon cyclic group having 3 to 10 carbon atoms, and specific examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, an adamantanyl group, a norbornanyl group (or a bicyclo[2.2.1]heptyl group), a bicyclo[1.1.1]pentyl group, a bicyclo[2.1.1]hexyl group, a bicyclo[2.1.1]octyl group, and the like. 3 -C 10 The cycloalkylene group is 3 -C 10 It means a divalent group having the same structure as a cycloalkyl group.

[0211] In this specification, C 1 -C 10The heterocycloalkyl group means a monovalent cyclic group having 1 to 10 carbon atoms, which further contains at least one heteroatom as a ring-forming atom in addition to carbon atoms, and specific examples thereof include a 1,2,3,4-oxatriazolidinyl group, a tetrahydrofuranyl group, a tetrahydrothiophenyl group, and the like. 1 -C 10 The heterocycloalkylene group is 1 -C 10 It means a divalent group having the same structure as a heterocycloalkyl group.

[0212] In this specification, C 3 -C 10 The cycloalkenyl group means a monovalent cyclic group having 3 to 10 carbon atoms, which has at least one carbon-carbon double bond in the ring but does not have aromaticity. Specific examples thereof include a cyclopentenyl group, a cyclohexenyl group, and a cycloheptenyl group. 3 -C 10 The cycloalkenylene group is 3 -C 10 It means a divalent group having the same structure as a cycloalkenyl group.

[0213] In this specification, C 1 -C 10 The heterocycloalkenyl group is a monovalent cyclic group having 1 to 10 carbon atoms, which further contains at least one heteroatom as a ring-forming atom in addition to carbon atoms, and has at least one double bond in the ring. 1 -C 10 Specific examples of the heterocycloalkenyl group include a 4,5-dihydro-1,2,3,4-oxatriazolyl group, a 2,3-dihydrofuranyl group, and a 2,3-dihydrothiophenyl group. 1 -C 10 The heterocycloalkenylene group is 1 -C 10 It means a divalent group having the same structure as a heterocycloalkenyl group.

[0214] In this specification, C 6 -C 60 Aryl group means a monovalent group having a carbocyclic aromatic system containing 6 to 60 carbon atoms, C 6 -C 60 An arylene group refers to a divalent group having a carbocyclic aromatic system containing 6 to 60 carbon atoms. 6 -C 60 Specific examples of the aryl group include a phenyl group, a pentalenyl group, a naphthyl group, an azulenyl group, an indacenyl group, an acenaphthyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a heptalenyl group, a naphthacenyl group, a picenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, and an ovalenyl group. 6 -C 60 Aryl groups and the C 6 -C 60 When the arylene group contains two or more rings, the two or more rings may be fused together.

[0215] In this specification, C 1 -C 60 Heteroaryl group means a monovalent group having a heterocyclic aromatic system containing, in addition to carbon atoms, at least one heteroatom as a ring-forming atom and having 1 to 60 carbon atoms, C 1 -C 60 The heteroarylene group means a divalent group having a heterocyclic aromatic system having 1 to 60 carbon atoms, which further contains at least one heteroatom as a ring-forming atom in addition to carbon atoms. 1 -C 60 Specific examples of the heteroaryl group include a pyridinyl group, a pyrimidinyl group, a pyrazinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, a benzoquinolinyl group, an isoquinolinyl group, a benzoisoquinolinyl group, a quinoxalinyl group, a benzoquinoxalinyl group, a quinazolinyl group, a benzoquinazolinyl group, a cinnolinyl group, a phenanthrolinyl group, a phthalazinyl group, and a naphthyridinyl group.1 -C 60 Heteroaryl groups and the C 1 -C 60 When a heteroarylene group contains more than one ring, the two or more rings may be fused together.

[0216] In the present specification, the term "non-aromatic condensed polycyclic group" refers to a monovalent group (e.g., having 8 to 60 carbon atoms) in which two or more rings are condensed with each other, the ring atoms are only carbon, and the entire molecule has non-aromaticity. Specific examples of the monovalent non-aromatic condensed polycyclic group include an indenyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, an indenophenanthrenyl group, and an indenoanthracenyl group. In the present specification, the term "divalent non-aromatic condensed polycyclic group" refers to a divalent group having the same structure as the monovalent non-aromatic condensed polycyclic group.

[0217] As used herein, the term "monovalent non-aromatic condensed heteropolycyclic group" refers to a monovalent group (e.g., having 1 to 60 carbon atoms) in which two or more rings are condensed with each other and which further contains at least one heteroatom as a ring-forming atom other than carbon atoms, and in which the entire molecule has non-aromatic properties. Specific examples of the monovalent non-aromatic hetero-condensed polycyclic group include a pyrrolyl group, a thiophenyl group, a furanyl group, an indolyl group, a benzoindolyl group, a naphthoindolyl group, an isoindolyl group, a benzisoindolyl group, a naphthoisoindolyl group, a benzosilolyl group, a benzothiophenyl group, a benzofuranyl group, a carbazolyl group, a dibenzosilolyl group, a dibenzothiophenyl group, a dibenzofuranyl group, an azacarbazolyl group, an azafluorenyl group, an azadibenzosilolyl group, an azadibenzothiophenyl group, an azadibenzofuranyl group, a pyrazolyl group, an imidazolyl group, a triazolyl group, a tetrazolyl group, an oxazolyl group, an isoxazolyl group, a thiazolyl group, an isothiazolyl group, an oxadiazolyl group, and a thiadiazolyl group. Groups include benzopyrazolyl group, benzimidazolyl group, benzoxazolyl group, benzothiazolyl group, benzoxadiazolyl group, benzothiadiazolyl group, imidazopyridinyl group, imidazopyrimidinyl group, imidazotriazinyl group, imidazopyrazinyl group, imidazopyridazinyl group, indenocarbazolyl group, indolocarbazolyl group, benzofurocarbazolyl group, benzothienocarbazolyl group, benzosilolocarbazolyl group, benzoindolocarbazolyl group, benzocarbazolyl group, benzonaphthofuranyl group, benzonaphthothiophenyl group, benzonaphthosilolyl group, benzofurodibenzofuranyl group, benzofurodibenzothiophenyl group, benzothienodibenzothiophenyl group, etc. In this specification, the divalent non-aromatic hetero-condensed polycyclic group means a divalent group having the same structure as the monovalent non-aromatic hetero-condensed polycyclic group.

[0218] In this specification, C 6 -C 60 The aryloxy group is -OA. 102 (Here, A 102 C 6 -C60 aryl group), 6 -C 60 The arylthio group is -SA 103 (Here, A 103 C 6 -C 60 aryl group).

[0219] In this specification, C 7 -C 60 The arylalkyl group is -A 104 A 105 (Here, A 104 is C 1 -C 54 is an alkylene group, 105 is C 6 -C 59 In the present specification, C 2 -C 60 The heteroarylalkyl group is -A 106 A 107 (Here, A 106 is C 1 -C 59 is an alkylene group, 107 is C 1 -C 59 Heteroaryl groups are shown.

[0220] As used herein, "R 10a "teeth, Deuterium (-D), -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, or a nitro group; Deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C 3 -C 60 carbocyclic group, C 1 -C 60 Heterocyclic groups, C 6 -C 60 Aryloxy group, C 6 -C 60 Arylthio group, C 7 -C 60 Arylalkyl groups, C 2 -C 60 Heteroarylalkyl groups, -Si(Q 11 )(Q12 )(Q 13 ), -N(Q 11 )(Q 12 ), -B(Q 11 )(Q 12 ), -C(=O)(Q 11 ), -S(=O) 2 (Q 11 ), -P(=O)(Q 11 )(Q 12 ), or any combination thereof, substituted or unsubstituted, 1 -C 60 Alkyl group, C 2 -C 60 Alkenyl group, C 2 -C 60 Alkynyl group, or C 1 -C 60 Alkoxy groups; Deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C 1 -C 60 Alkyl group, C 2 -C 60 Alkenyl group, C 2 -C 60 Alkynyl group, C 1 -C 60 Alkoxy group, C 3 -C 60 carbocyclic group, C 1 -C 60 Heterocyclic groups, C 6 -C 60 Aryloxy group, C 6 -C 60 Arylthio group, C 7 -C 60 Arylalkyl groups, C 2 -C 60 Heteroarylalkyl groups, -Si(Q 21 )(Q 22 )(Q 23 ), -N(Q 21 )(Q 22 ), -B(Q 21 )(Q 22 ), -C(=O)(Q 21 ), -S(=O) 2 (Q 21 ), -P(=O)(Q 21 )(Q 22), or any combination thereof, substituted or unsubstituted, 3 -C 60 carbocyclic group, C 1 -C 60 Heterocyclic groups, C 6 -C 60 Aryloxy group, C 6 -C 60 Arylthio group, C 7 -C 60 Arylalkyl group or C 2 -C 60 a heteroarylalkyl group; or -Si(Q 31 )(Q 32 )(Q 33 ), -N(Q 31 )(Q 32 ), -B(Q 31 )(Q 32 ), -C(=O)(Q 31 ), -S(=O) 2 (Q 31 ) or -P(=O)(Q 31 )(Q 32 ); may also be used.

[0221] In this specification, Q 1 From Q 3 , Q 11 From Q 13 , Q 21 From Q 23 , and Q 31 From Q 33 are, independently of each other, hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl group; cyano group; nitro group; C 1 -C 60 Alkyl group; C 2 -C 60 Alkenyl group; C 2 -C 60 Alkynyl group; C 1 -C 60 Alkoxy group; or deuterium, -F, cyano group, C 1 -C 60 Alkyl group, C 1 -C 60 C, substituted or unsubstituted with alkoxy groups, phenyl groups, biphenyl groups, or any combination thereof3 -C 60 carbocyclic group, C 1 -C 60 Heterocyclic group; C 7 -C 60 Arylalkyl group; or C 2 -C 60 It may be a heteroarylalkyl group.

[0222] As used herein, heteroatom refers to any atom other than a carbon atom. Examples of said heteroatoms include O, S, N, P, Si, B, Ge, Se, or any combination thereof.

[0223] As used herein, "Ph" means a phenyl group, "Me" means a methyl group, "Et" means an ethyl group, "tert-Bu" or "Bu t " means a tert-butyl group, and "OMe" means a methoxy group.

[0224] In the present specification, the term "biphenyl group" means a "phenyl group substituted with a phenyl group". The "biphenyl group" is a group in which the substituent is "C 6 -C 60 It belongs to the "substituted phenyl group" which is an "aryl group."

[0225] In the present specification, the term "terphenyl group" means a "phenyl group substituted with a biphenyl group." The "terphenyl group" is a group in which the substituent is "C 6 -C 60 Aryl-substituted C 6 -C 60 It belongs to the "substituted phenyl group" which is an "aryl group."

[0226] In this specification, * and *', unless otherwise defined, refer to the bond sites between adjacent atoms in a given chemical formula or moiety.

[0227] The compound and the light-emitting device according to the embodiment of the present invention will be described in more detail below with reference to synthesis examples and examples. In the synthesis examples below, in the expression "B was used instead of A," the molar equivalents of A and B are the same. EXAMPLES

[0228] Synthesis Example 1-1 In a 250 mL three-neck flask, 4 mmol of indium acetate and 12 mmol of palmitic acid were poured together with 100 mL of octadecene (ODE), and then the mixture was heated at 120°C for 1 hour in a vacuum atmosphere. The atmosphere was then changed to argon, and the In(PA) 3 Prepare the solution: In(PA) 3 The temperature of the solution is raised to 280°C and maintained for 1 hour, after which 10mL 0.2M tris(trimethylsilyl)phosphine / trioctylphosphine is rapidly injected using a syringe, and crystals are grown at 260°C for 30 minutes. Then, 52mL 0.2M In(PA) 3The solution and 26mL 0.2M tris(trimethylsilyl)phosphine / trioctylphosphine are injected at a rate of 1.5mL / min and 0.75mL / min, respectively, for 35 minutes. After 10 minutes of stabilization, the heat source is removed and the temperature of the reactor is cooled to room temperature to synthesize the InP core. The synthesized InP core undergoes a purification process, in which 40mL of acetone and 10mL of ethanol are mixed per 10mL of InP core solution, and the mixture is centrifuged at 9,000 rpm, the supernatant is removed, and the precipitate is dispersed in toluene. To form the shell, the synthesized InP core undergoes surface treatment. 1.6mmol zinc acetate, 3.2mmol oleic acid, and 80mL trioctylamine are mixed, and then mixed in vacuum at 120°C for 1 hour. After switching to an argon atmosphere, the temperature is maintained at 280°C for 1 hour, and then the temperature is lowered to 180°C, and 12 mL of the InP core solution dispersed in toluene is rapidly injected using a syringe. After 5 minutes, 0.2 mL of hydrogen fluoride (HF) solution (10 wt% in acetone) is injected, and the temperature is maintained for 10 minutes to produce a surface-treated InP core solution. The reactor temperature is increased to 320°C. 15 mmol of 0.4 M Zn(OA) 2 After injection, 4.0 mmol Se / trioctylphosphine is injected followed by 1 hour growth of the ZnSe shell, followed by 1 hour growth of ZnS after injection of 3.0 mmol S / trioctylphosphine.

[0229] Synthesis Example 1-2 InP / ZnSe / ZnS was synthesized in the same manner as in Synthesis Example 1-1, and then 21 mmol of ZnCl 2 dissolved in ethanol was added and mixed, followed by purification.

[0230] Synthesis Example 1-3 InP / ZnSe / ZnS was synthesized in the same manner as in Synthesis Example 1-1, and then 1 mmol of 4-methoxycinnamic acid dissolved in isopropanol was added and mixed, followed by purification.

[0231] Synthesis Example 2-1 In a 250 mL three-neck flask, 4 mmol of indium acetate and 12 mmol of palmitic acid were poured together with 100 mL of octadecene (ODE), and then the mixture was heated at 120°C for 1 hour in a vacuum atmosphere. The atmosphere was then changed to argon, and the In(PA) 3 Prepare a solution of In(PA) 3 After increasing the temperature of the solution to 240℃, 10mL of 0.4M tris(trimethylsilyl)phosphine / trioctylphosphine is quickly injected using a syringe. After that, the heat source is removed and the temperature of the reactor is cooled to room temperature to synthesize InP cores. The synthesized InP cores undergo a purification process, where 40mL of acetone and 10mL of ethanol are mixed per 10mL of InP core solution, and the mixture is centrifuged at 9,000 rpm, the supernatant is removed, and the precipitate is dispersed in toluene. To form the shell, the synthesized InP cores undergo surface treatment. 1.6mmol zinc acetate, 3.2mmol oleic acid, and 80mL trioctylamine are mixed and mixed in vacuum at 120℃ for 1 hour. After switching to an argon atmosphere, the temperature is maintained at 280°C for 1 hour, and then the temperature is lowered to 180°C, and 12 mL of the InP core solution dispersed in toluene is rapidly injected using a syringe. After 5 minutes, 0.2 mL of hydrogen fluoride (HF) solution (10 wt% in acetone) is injected, and the temperature is maintained for 10 minutes to produce a surface-treated InP core solution. The reactor temperature is increased to 320°C. 15 mmol of 0.4 M Zn(OA) 2 After injection, 4.0 mmol Se / trioctylphosphine is injected followed by 1 hour growth of the ZnSe shell, followed by 1 hour growth of ZnS after injection of 3.0 mmol S / trioctylphosphine.

[0232] Synthesis Example 2-2 InP / ZnSe / ZnS was synthesized in the same manner as in Synthesis Example 2-1, and then 21 mmol of ZnCl 2 dissolved in ethanol was added and mixed, followed by purification.

[0233] Synthesis Example 2-3 InP / ZnSe / ZnS was synthesized in the same manner as in Synthesis Example 2-1, and then 1 mmol of 4-methoxycinnamic acid dissolved in isopropanol was added and mixed, followed by purification.

[0234] Synthesis Example 3-1 2mmol of zinc acetate, 2ml of oleic acid (OA), and 15ml of 1-octadecene (ODE) are placed in a three-necked flask and kept under vacuum at 120℃ until it melts and becomes transparent. Then, Se-DPP (1mmol of Se in 0.5ml of diphenylphosphine (DPP)) and Te-TOP (0.349mmol of Te in 0.8ml of trioctylphosphine (TOP)) prepared in advance are poured in succession at 220℃, the reaction is maintained for 30 minutes, and the reaction is further carried out at 300℃ for 1 hour. Then, the temperature is lowered, and an excess amount of EtOH is poured in to precipitate the mixture, which is then dispersed in hexane.

[0235] 3 mmol of zinc acetate, 2 ml of oleic acid (OA), and 10 ml of trioctylamine (TOA) are placed in a three-necked flask, and the flask is left in a vacuum at 120°C until it dissolves and becomes transparent. After that, the previously synthesized ZnSeTe core is injected, and the flask is left in a vacuum for 5 minutes. Hydrogen fluoride (HF) is injected, and the flask is left in a vacuum for 10 minutes. The solution temperature is raised to 240°C, and 4 ml of 0.5 M zinc oleate and 0.6 ml of 2 M Se-trioctylphosphine (TOP) are injected, and the temperature is raised to 340°C to grow the ZnSe shell for 30 minutes.

[0236] After synthesizing ZnSeTe / ZnSe, 3 ml of 0.5 M zinc oleate and 1.2 ml of 2 M S-TOP are further injected at 340° C., and the reaction is carried out for 30 minutes to grow a ZnS shell.

[0237] Synthesis Example 3-2 ZnTeSe / ZnSe / ZnS was synthesized in the same manner as in Synthesis Example 3-1, and then 21 mmol of ZnCl 2 dissolved in ethanol was added and mixed, followed by purification.

[0238] Synthesis Example 3-3 ZnTeSe / ZnSe / ZnS was synthesized in the same manner as in Synthesis Example 3-1, and then 22 mmol of ZnCl 2 dissolved in ethanol was added and mixed, followed by purification.

[0239] Synthesis Example 3-4 ZnTeSe / ZnSe / ZnS was synthesized in the same manner as in Synthesis Example 3-1, and then 1 mmol of 4-methoxycinnamic acid dissolved in isopropanol was added, mixed, and purified.

[0240] Synthesis Example 3-5 ZnTeSe / ZnSe / ZnS was synthesized in the same manner as in Synthesis Example 3-1, and then 1 mmol of 4-(dimethylamino)cinnamic acid dissolved in isopropanol was added and mixed, followed by purification.

[0241] [Table 1] [Table 1]

[0242] Evaluation example 1 The CBM energy levels and VBM energy levels of the quantum dots according to Synthesis Examples 1-1 to 1-3, Synthesis Examples 2-1 to 2-3, and Synthesis Examples 3-1 to 3-5 were measured and are shown in FIGS. 5a to 5c.

[0243] The VBM energy level was measured by APS (ambient photoelectron spectroscopy) measurement, and the energy band gap was measured by UV-Vis measurement. The CBM energy level was calculated from the measured energy band gap and VBM energy level. The measurement was performed after forming a film by spin-coating (2,500 rpm (30 seconds)) a 50 mg / ml solution on a Au substrate under a nitrogen flow.

[0244] Example 1 The light-emitting element was fabricated by laminating a hole injection layer (HIL) (poly(3,4-ethylenedioxydiphene):poly(styrene sulfonate) (PEDOT:PSS)), a hole transport layer (HTL) (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (TFB)), a quantum dot (QD) emitting layer, an electron transport layer (ETL) (ZnMgO), and a cathode (Al) in this order on a patterned ITO substrate. The quantum dots obtained in Synthesis Example 3-1 and Synthesis Example 3-4 were used to form the quantum dot (QD) emitting layer.

[0245] The hole injection layer (HIL), hole transport layer (HTL), quantum dot (QD) emitting layer, and electron transport layer (ETL) were each fabricated by spin coating, and the cathode was fabricated by evaporation. The thickness of the hole injection layer (HIL) was 1,400 Å, the thickness of the hole transport layer (HTL) was 400 Å, the thickness of the quantum dot (QD) emitting layer was 200 Å, and the thickness of the electron transport layer (ETL) was 500 Å.

[0246] The hole injection layer (HIL) and the hole transport layer (HTL) are formed by 10 -3 After the VCD process at Torr, a baking process was carried out at 230° C. for 30 minutes. The quantum dot (QD) light emitting layer and the electron transport layer (ETL) were formed in 10 -3 After the VCD step was carried out at Torr, a bake step was carried out at 100° C. for 10 minutes.

[0247] Example 2, Comparative Examples 1 and 2 A light-emitting device was prepared using the same method as in Example 1, except that the quantum dots shown in Table 2 below were used instead of the quantum dots according to Synthesis Example 3-1 and Synthesis Example 3-4 when forming the light-emitting layer.

[0248] [Table 2] [Table 2]

[0249] Evaluation example 2 The luminance efficiency and lifetime of the quantum dot light emitting devices according to Examples 1 and 2 and Comparative Examples 1 and 2 were measured, and the results are shown in Figures 6a, 6b, 7a, and 7b. The luminance and efficiency were measured using a luminance meter PR650, with power supplied from a current / voltage meter (Kethley SMU 236).

[0250] 6a and 6b, it can be seen that the light emitting device according to Example 1 is superior in luminous efficiency and life span to the light emitting device according to Comparative Example 1.

[0251] 7a and 7b, it can be seen that the light emitting device according to Example 2 is superior in luminous efficiency and life span to the light emitting device according to Comparative Example 2.

Claims

1. A first quantum dot and a second quantum dot are included. a valence band maximum (VBM) energy level of the first quantum dot is different from a VBM energy level of the second quantum dot; A quantum dot composition, wherein an energy band gap of the first quantum dot and an energy band gap of the second quantum dot are the same.

2. The quantum dot composition of claim 1 , wherein the VBM energy level of the first quantum dot is −6.5 to −5 eV.

3. The quantum dot composition of claim 1 , wherein the VBM energy level of the second quantum dot is −6.6 to −5.2 eV.

4. 2. The quantum dot composition of claim 1, wherein the difference between the VBM energy level of the first quantum dot and the VBM energy level of the second quantum dot is 0.01 to 1 eV.

5. The first quantum dot and the second quantum dot each independently include a core and a shell covering a portion of the core; The quantum dot composition of claim 1 , wherein a core size of the first quantum dot is different from a core size of the second quantum dot.

6. the cores of the first quantum dot and the second quantum dot comprise InGaP; the Ga content in the core of the first quantum dot is greater than the Ga content in the core of the second quantum dot; The quantum dot composition of claim 5 , wherein the core size of the first quantum dot is larger than the core size of the second quantum dot.

7. the cores of the first quantum dot and the second quantum dot comprise ZnSeTe; the Te content in the core of the first quantum dot is greater than the Te content in the core of the second quantum dot; The quantum dot composition of claim 5 , wherein the core size of the first quantum dot is smaller than the core size of the second quantum dot.

8. 6. The quantum dot composition of claim 5, wherein the shell comprises two or more layers.

9. The first quantum dot comprises a first nanomaterial and a first ligand disposed on a surface of the first nanomaterial; The second quantum dot comprises a second nanomaterial and a second ligand disposed on a surface of the second nanomaterial; 2. The quantum dot composition of claim 1, wherein the first ligand and the second ligand each independently comprise a halide, a thiol-based compound, a carboxylic acid-containing compound, or any combination thereof.

10. The quantum dot composition of claim 9 , wherein the first nanomaterial and the second nanomaterial are the same.

11. the first ligand and the second ligand are the same; The quantum dot composition of claim 9 , wherein the content of the first ligand in the first quantum dot is different from the content of the second ligand in the second quantum dot.

12. 10. The quantum dot composition of claim 9, wherein the first ligand and the second ligand are different from each other.

13. The thiol compound has at least one R １０ａ C substituted or unsubstituted １ -C ６０ an alkyl group, at least one R １０ａ C substituted or unsubstituted ６ -C ６０ aryl groups, or any combination thereof; The carboxylic acid-containing compound comprises at least one Ｒ１０ａ C substituted or unsubstituted １ -C ６０ an alkyl group, at least one R １０ａ C substituted or unsubstituted １ -C ６０ an alkyl group, at least one R １０ａ C substituted or unsubstituted ６ -C ６０ Aryl groups, -N(Q １ ) (Q ２ ), or any combination thereof, The R １０ａ teeth, Deuterium (-D), -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, or a nitro group; Deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C ３ -C ３０ Carbocyclic group, C １ -C ３０ Heterocyclic group, C ６ -C ３０ Aryloxy group, C ６ -C ３０ Arylthio group, -Si(Q １１ ) (Q １２ ) (Q １３ ), -N(Q １１ ) (Q １２ ), -B(Q １１ ) (Q １２ ), -C(=O)(Q １１ ), -S(=O) ２ (Q １１ ), -P(=O)(Q １１ ) (Q １２ ), or any combination thereof, substituted or unsubstituted, １ -C ２０ Alkyl group, C ２ -C ２０ Alkenyl group, C ２ -C ２０ Alkynyl group or C １ -C ２０ Alkoxy group; Deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C １ -C ２０ Alkyl group, C ２ -C ２０ Alkenyl group, C ２ -C ２０ Alkynyl group, C １ -C ２０ Alkoxy group, C ３ -C ３０ Carbocyclic group, C １ -C ３０ Heterocyclic group, C ６ -C ３０ Aryloxy group, C ６ -C ３０ Arylthio group, -Si(Q ２１ ) (Q ２２ ) (Q ２３ ), -N(Q ２１ ) (Q ２２ ), -B(Q ２１ ) (Q ２２ ), -C(=O)(Q ２１ ), -S(=O) ２ (Q ２１ ), -P(=O)(Q ２１ ) (Q ２２ ), or any combination thereof, substituted or unsubstituted, ３ -C ３０ Carbocyclic group, C １ -C ３０ Heterocyclic group, C ６ -C ３０ Aryloxy group or C ６ -C ３０ an arylthio group; or -Si(Q ３１ ) (Q ３２ ) (Q ３３ ), -N(Q ３１ ) (Q ３２ ), -B(Q ３１ ) (Q ３２ ), -C(=O)(Q ３１ ), -S(=O) ２ (Q ３１ ) or -P(=O)(Q ３１ ) (Q ３２ ); The aforementioned Q １ From Q ３ , Q １１ From Q １３ , Q ２１ From Q ２３ , and Q ３１ From Q ３３ are each independently hydrogen; deuterium; -F; -Cl; -Br; -I; a hydroxyl group; a cyano group; a nitro group; １ -C ２０ Alkyl group; C ２ -C ２０ Alkenyl group; C ２ -C ２０ Alkynyl group; C １ -C ２０ Alkoxy group; or deuterium, -F, cyano group, C １ -C ２０ Alkyl group, C １ -C ２０ C substituted or unsubstituted with an alkoxy group, a phenyl group, a biphenyl group, or any combination thereof ３ -C ３０ Carbocyclic or C １ -C ３０ 10. The quantum dot composition of claim 9, wherein:

14. 2. The quantum dot composition of claim 1, wherein the content ratio of the first quantum dots and the second quantum dots is from 1:10 to 10:

1.

15. A first electrode and a second electrode facing the first electrode; an intermediate layer including a light-emitting layer disposed between the first electrode and the second electrode; A light-emitting device, wherein the light-emitting layer comprises the quantum dot composition according to claim 1 .

16. the first electrode is an anode; the second electrode is a cathode; the intermediate layer further includes a hole transport region interposed between the first electrode and the light emitting layer, and an electron transport region interposed between the light emitting layer and the second electrode; the hole transport region includes a hole injection layer, a hole transport layer, a light-emitting auxiliary layer, an electron blocking layer, or any combination thereof; 16. The light-emitting device of claim 15, wherein the electron transport region comprises a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

17. the electron transport region comprises an electron transport layer; 17. The light-emitting device of claim 16, wherein the electron transport layer comprises a metal oxide represented by the following Formula 1: <Chemical formula 1> MpOq In the above Chemical Formula 1, M is Zn, Ti, Zr, Sn, W, Ta, Ni, Mo, Cu or V; p and q are each independently an integer of 1 or 5;

18. 18. An electronic device comprising a light-emitting element according to any one of claims 1 to 17.

19. Further comprising a thin film transistor, The thin film transistor includes a source electrode and a drain electrode, The electronic device of claim 18 , wherein a first electrode of the light emitting device is electrically connected to at least one of a source electrode and a drain electrode of the thin film transistor.

20. 20. The electronic device of claim 18, further comprising a color filter, a color conversion layer, a touch screen layer, a polarizing layer, or any combination thereof.

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