Non-conductive film, semiconductor device, and method for manufacturing the same

Abstract

The present invention relates to a non-conductive film, a semiconductor device, and a method for manufacturing the same. The non-conductive film can effectively prevent the generation of voids during semiconductor manufacturing processes, adhere sufficiently to a semiconductor element, and provide a semiconductor device with excellent reliability.

Description

Technical Field

[0001] [Cross - Reference to Related Applications] This application claims the benefit of priority based on Korean Patent Application No. 10 - 2023 - 0050688 filed on April 18, 2023, and all the contents disclosed in the literature of the Korean patent application are included as part of this specification.

[0002] The present invention relates to a non - conductive film, a semiconductor device, and a method for manufacturing the same.

Background Art

[0003] Recently, as the trend of miniaturization, high functionality, and large capacity of electronic devices has expanded, the need for high density and high integration of semiconductor packages has been rapidly increasing.

[0004] In response to such requirements, a flip - chip mounting method has been introduced in which semiconductor elements such as semiconductor chips are directly connected onto a substrate. In the flip - chip mounting method, a semiconductor chip is electrically connected to another semiconductor chip or a wiring substrate through bumps composed of solder or the like formed on the semiconductor chip. At this time, an underfill material is filled between the bonding surfaces for reinforcement of the bonding position and improvement of bonding reliability.

[0005] As such an underfill filling method, the capillary underfilling method is known. However, the capillary underfilling method has a fundamental problem that it is difficult to uniformly inject the underfill material into the space between fine electrodes within a short time. Also, recently, as the pitch between electrodes has become narrower and the thickness of the semiconductor chip has become thinner, there has been a limit in providing a sealing layer with a uniform thickness by the capillary underfilling method.

[0006] Therefore, a method using a non-conductive film has been developed. According to the method, a non-conductive film is formed or attached to the element formation surface of a semiconductor wafer. After dicing the semiconductor wafer into individual semiconductor chips, the individual semiconductor chips are mounted on a substrate, and metal bonding and sealing are performed simultaneously.

[0007] Such metal bonding and sealing are mainly performed by a thermocompression bonding (TCB) method. Thermocompression bonding may be performed by applying pressure for a short period of about 2 seconds to 10 seconds at a temperature of about 200°C to 300°C.

[0008] Since the thermocompression bonding method involves rapid temperature and pressure changes, there is a problem that voids are likely to occur in the sealing layer formed of the non-conductive film. However, if the voids remain in the sealing layer without being removed, it will have an adverse effect on the reliability of the semiconductor device.

SUMMARY OF THE INVENTION

PROBLEMS TO BE SOLVED BY THE INVENTION

[0009] The present invention provides a non-conductive film that makes it difficult for voids to occur in the semiconductor manufacturing process.

[0010] The present invention also provides a semiconductor device including the non-conductive film.

[0011] The present invention also provides a method for manufacturing a semiconductor device using the non-conductive film.

MEANS FOR SOLVING THE PROBLEMS

[0012] Hereinafter, a non-conductive film, a semiconductor device, and a method for manufacturing a semiconductor device according to specific embodiments of the invention will be described.

[0013] According to an embodiment of the invention, a non-conductive film is provided that includes a thermoplastic resin, a thermosetting resin, a curing agent, and an inorganic filler, and includes an adhesive layer in which Y in the following Formula 1 is greater than 0 and less than or equal to 3.

[0014] [Formula 1] Y = (ΔT × G) 2 / (5.88 × η)

[0015] In Formula 1 above, ΔT is the difference between the heat generation start temperature and the maximum heat generation temperature of the adhesive layer measured at a heating rate of 10 °C / min and between 30 °C and 300 °C through differential scanning calorimetry, G is the gelation time at 200 °C measured in seconds for the adhesive layer, and η is the minimum melt viscosity measured in units of Pa·s for the adhesive layer.

[0016] The non-conductive film of the above embodiment may be a non-conductive film before being used in a semiconductor manufacturing process, a non-conductive film applied during the semiconductor manufacturing process, or a non-conductive film included in a final semiconductor device.

[0017] The non-conductive film before being used in a semiconductor manufacturing process can mean a film including a B-staged adhesive layer applied on a substrate. As an example, the non-conductive film before being used in a semiconductor manufacturing process may be a die bonding film in which a substrate and an adhesive layer are laminated, or a dicing die bonding film in which a substrate, an adhesive layer, and an adhesive layer are sequentially laminated.

[0018] The non-conductive film applied during the semiconductor manufacturing process can mean a B-staged adhesive layer applied on a semiconductor element. That is, the non-conductive film may be manufactured in a film form after being applied on a substrate and then attached to a semiconductor element, or may be manufactured in a film shape by applying an adhesive composition to a semiconductor element.

[0019] The non-conductive film included in the final semiconductor device can mean a cured adhesive layer confirmed in the final semiconductor device manufactured through the semiconductor manufacturing process. The cured adhesive layer may be a sealing layer that seals the semiconductor element.

[0020] In the above formula 1, substitute the value calculated in units of °C for ΔT, substitute the value measured in units of seconds (sec) for G, and substitute the value measured in units of Pa·s for η. However, by substituting only numerical values omitting the units, Y in formula 1 can be calculated as a value without units.

[0021] When using a non-conductive film including an adhesive layer where Y calculated by the above formula 1 is 3 or less in the semiconductor manufacturing process, voids are less likely to be generated, so a semiconductor device with excellent reliability can be provided. In particular, a non-conductive film including an adhesive layer where Y calculated by the above formula 1 is 3 or less can effectively prevent the generation of voids even in the thermocompression bonding process of the flip chip mounting method where voids are likely to occur, and can provide a semiconductor device with excellent reliability.

[0022] The adhesive layer used for joining members of a semiconductor device with different coefficients of linear expansion, etc. (for example, a wiring board and a semiconductor chip or different semiconductor chips from each other, etc.) needs to be sufficiently protruded around the joined members to form a fillet in order to disperse the stress of the members due to temperature changes and improve reliability. A non-conductive film including an adhesive layer where Y calculated by the above formula 1 is 3 or less can form an appropriate amount of fillets to ensure the reliability of the semiconductor device, and in particular, can effectively prevent the generation of voids in the fillets.

[0023] ΔT in the above formula 1 is the difference between the heat generation start temperature and the maximum heat generation temperature of the adhesive layer. For the specific measurement method of ΔT, reference can be made to the matters described in the test examples described later.

[0024] The ΔT may be a value determined by the gel time and the minimum melt viscosity such that Y in Formula 1 is 3 or less. As an example, the ΔT may be 1°C to 20°C. More specifically, the ΔT may be 1°C or more, 2°C or more, 3°C or more, 4°C or more, 5°C or more, 6°C or more, or 7°C or more, and 20°C or less, 15°C or less, 14°C or less, 13°C or less, 12°C or less, 11°C or less, or 10°C or less. Within such a range, by curing the adhesive layer at an appropriate rate in the thermocompression bonding process, it is possible to ensure sufficient time for voids to escape and prevent the generation of additional voids inside.

[0025] G in the above Formula 1 is the gelation time of the adhesive layer at 200°C. G is the gelation time of the B-stage adhesive layer, and for the specific measurement method, reference can be made to the matters described in the test examples below.

[0026] The G may be a value determined by the ΔT and the minimum melt viscosity such that Y in Formula 1 is 3 or less. As an example, the G may be 5 seconds to 30 seconds. More specifically, the G may be 5 seconds or more, 6 seconds or more, or 7 seconds or more, and 30 seconds or less, 20 seconds or less, 10 seconds or less, 9 seconds or less, 8.5 seconds or less, 8.3 seconds or less, 8.2 seconds or less, or 8.14 seconds or less. Within such a range, by curing the adhesive layer at an appropriate rate in the thermocompression bonding process, it is possible to ensure sufficient time for voids to escape and prevent the generation of additional voids inside.

[0027] η in the above Formula 1 is the minimum melt viscosity of the adhesive layer. For the specific measurement method of η, reference can be made to the matters described in the test examples below.

[0028] The η may be a value determined by the ΔT and the gel time such that Y in Formula 1 is 3 or less. As an example, η may be from 10 Pa·s to 5000 Pa·s. More specifically, η may be 10 Pa·s or more, 50 Pa·s or more, 100 Pa·s or more, 150 Pa·s or more, 200 Pa·s or more, 250 Pa·s or more, 300 Pa·s or more, 350 Pa·s or more, or 400 Pa·s or more, and 5000 Pa·s or less, 4000 Pa·s or less, 3000 Pa·s or less, 2000 Pa·s or less, 1000 Pa·s or less, 900 Pa·s or less, 800 Pa·s or less, or 700 Pa·s or less. Within such a range, the adhesive layer can exhibit appropriate fluidity in a state where voids are less likely to occur and can sufficiently embed the semiconductor element.

[0029] Y in the above Formula 1 is a factor related to the generation of voids in the adhesive layer during the semiconductor manufacturing process, and when it has a value of 3 or less, the generation of voids can be effectively suppressed. More specifically, Y in the above Formula 1 may be 3 or less, 2.5 or less, 2 or less, 1.9 or less, 1.8 or less, 1.7 or less, 1.6 or less, or 1.5 or less. Y in the above Formula 1 is a value exceeding 0, and for example, may be 0.00001 or more, 0.001 or more, 0.001 or more, 0.1 or more, 0.5 or more, 0.8 or more, or 1 or more.

[0030] The adhesive layer according to an embodiment may include a thermoplastic resin, a thermosetting resin, a curing agent, and an inorganic filler.

[0031] The adhesive layer according to an embodiment is a thermoplastic resin and may include two or more thermoplastic resins having different glass transition temperatures. In this case, it is advantageous to provide an adhesive layer in which Y in the above Formula 1 is 3 or less.

[0032] Specifically, the thermoplastic resin may include a first thermoplastic resin having a glass transition temperature of -10°C to 50°C and a second thermoplastic resin having a glass transition temperature exceeding 50°C and 100°C or less.

[0033] The type of the first thermoplastic resin is not particularly limited. For example, it may include one or more resins selected from the group consisting of polyimide resins, polyetherimide resins, polyesterimide resins, polyamide resins, polyethersulfone resins, polyetherketone resins, polyolefin resins, polyvinyl chloride resins, phenoxy resins, butadiene rubbers, styrene-butadiene rubbers, modified butadiene rubbers, reactive butadiene acrylonitrile copolymer rubbers, and (meth)acrylate resins.

[0034] As an example, the first thermoplastic resin may include a (meth)acrylate resin. The (meth)acrylate resin may be a (co)polymer produced from one or more monomers selected from the group consisting of alkyl (meth)acrylates having 1 to 12 carbon atoms, (meth)acrylates containing a reactive functional group, acrylonitrile, and vinyl monomers copolymerizable therewith. Examples of the alkyl (meth)acrylate having 1 to 12 carbon atoms include ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, or octyl (meth)acrylate (ethylhexyl (meth)acrylate). Examples of the (meth)acrylate containing a reactive functional group include monomers containing at least one of an epoxy group, a hydroxyl group, and a carboxyl group. Specifically, examples of the (meth)acrylate containing a reactive functional group include glycidyl (meth)acrylate. Examples of the vinyl monomer include styrene.

[0035] As an example, as the first thermoplastic resin, a first copolymer produced from an alkyl (meth)acrylate having 1 to 12 carbon atoms, a (meth)acrylate containing an epoxy group, and acrylonitrile may be used.

[0036] The first copolymer may contain, for example, repeating units of alkyl (meth)acrylate having 1 to 12 carbon atoms in an amount of 30 to 99% by weight, 50 to 97% by weight, or 60 to 95% by weight based on the total repeating units. The first copolymer may contain, for example, repeating units containing an epoxy group in an amount of 0.1 to 30% by weight, 0.1 to 20% by weight, 0.1 to 10% by weight, or 0.1 to 7% by weight based on the total repeating units. The first copolymer may contain, for example, repeating units of acrylonitrile in an amount of 1 to 60% by weight, 5 to 50% by weight, or 7 to 35% by weight based on the total repeating units.

[0037] The weight average molecular weight of the first thermoplastic resin may be 50,000 to 1,000,000 g / mol.

[0038] The glass transition temperature of the first thermoplastic resin may be -10°C or higher, -8°C or higher, or -6°C or higher, and 50°C or lower, 45°C or lower, or 42°C or lower. Within such a range, by combining with the second thermoplastic resin, Y in the above formula 1 can be made to have a lower value.

[0039] The type of the second thermoplastic resin is not particularly limited, and it may contain, for example, one or more resins selected from the group consisting of polyimide resins, polyetherimide resins, polyesterimide resins, polyamide resins, polyethersulfone resins, polyetherketone resins, polyolefin resins, polyvinyl chloride resins, phenoxy resins, butadiene rubbers, styrene-butadiene rubbers, modified butadiene rubbers, reactive butadiene acrylonitrile copolymer rubbers, and (meth)acrylate resins.

[0040] As an example, the second thermoplastic resin may contain one or more resins selected from the group consisting of (meth)acrylate resins and phenoxy resins.

[0041] The (meth)acrylate resin may be a (co)polymer produced from one or more monomers selected from the group consisting of alkyl (meth)acrylates having 1 to 12 carbon atoms, (meth)acrylates containing reactive functional groups, acrylonitrile, and vinyl monomers copolymerizable therewith. Examples of the alkyl (meth)acrylate having 1 to 12 carbon atoms include ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, or octyl (meth)acrylate (ethylhexyl (meth)acrylate). Examples of the (meth)acrylate containing reactive functional groups include monomers containing at least one of an epoxy group, a hydroxyl group, and a carboxyl group. Specifically, examples of the (meth)acrylate containing reactive functional groups include glycidyl (meth)acrylate. Examples of the vinyl monomer include styrene.

[0042] As an example, as the second thermoplastic resin, a second copolymer produced from an alkyl (meth)acrylate having 1 to 12 carbon atoms, a (meth)acrylate containing an epoxy group, acrylonitrile, and styrene may be used.

[0043] The second copolymer may contain, for example, the repeating unit of the alkyl (meth)acrylate having 1 to 12 carbon atoms in an amount of 20 to 60% by weight or 30 to 50% by weight based on the total repeating units. The second copolymer may contain, for example, the repeating unit containing an epoxy group in an amount of 0.1 to 30% by weight, 0.1 to 20% by weight, 0.1 to 10% by weight, or 0.1 to 7% by weight based on the total repeating units. The second copolymer may contain, for example, the repeating unit of acrylonitrile in an amount of 5 to 60% by weight, 10 to 50% by weight, or 20 to 40% by weight based on the total repeating units. The second copolymer may contain the repeating unit of styrene in an amount of 5 to 50% by weight, 10 to 40% by weight, or 20 to 30% by weight.

[0044] As another example, as the second thermoplastic resin, a phenoxy resin such as bisphenol A type phenoxy resin, bisphenol F type phenoxy resin, bisphenol A / F type phenoxy resin or fluorene-based phenoxy resin may be used. As a commercially available phenoxy resin, YP-50 (KUKDO CHEMICAL) or the like may be used.

[0045] The weight average molecular weight of the second thermoplastic resin may be 10,000 to 1,000,000 g / mol.

[0046] The glass transition temperature of the second thermoplastic resin may exceed 50°C, be 55°C or higher, 60°C or higher, and be 100°C or lower, 90°C or lower, 85°C or lower, 80°C or lower, 75°C or lower, or 70°C or lower. Within such a range, by combining with the first thermoplastic resin, Y in the above formula 1 can be made to have a lower value.

[0047] The thermoplastic resin may be contained in an amount of 1 to 30% by weight based on the total solid content of the adhesive layer. Specifically, the thermoplastic resin may be contained in an amount of 1% by weight or more, 3% by weight or more, 5% by weight or more, or 7% by weight or more, and 30% by weight or less, 20% by weight or less, 15% by weight or less, or 12% by weight or less based on the total solid content of the adhesive layer. Within such a range, it is advantageous to provide an adhesive layer capable of embedding a semiconductor element without generating voids in the semiconductor manufacturing process.

[0048] The first and second thermoplastic resins may be contained in a weight ratio of 1:10 to 1:0.1, 1:5 to 1:0.2, 1:2 to 1:0.5, or 1:1.2 to 1:0.8. Within such a range, it is advantageous to provide an adhesive layer in which Y in the above formula 1 is 3 or less.

[0049] The thermosetting resin can react with a curing agent to exhibit heat resistance and mechanical strength.

[0050] The thermosetting resin may contain an epoxy resin. The type of the epoxy resin is not particularly limited, and it may contain one or more resins selected from the group consisting of cresol novolac epoxy resin, bisphenol F type epoxy resin, bisphenol F type novolac epoxy resin, bisphenol A type epoxy resin, bisphenol A type novolac epoxy resin, phenol novolac epoxy resin, tetrafunctional epoxy resin, biphenyl type epoxy resin, biphenyl type novolac epoxy resin, triphenol methane type epoxy resin, alkyl-modified triphenol methane type epoxy resin, naphthalene type epoxy resin, dicyclopentadiene type epoxy resin, dicyclopentadiene-modified phenol type epoxy resin, glycidylamine type epoxy resin, and alicyclic epoxy resin.

[0051] The thermosetting resin may contain a liquid epoxy resin and a solid epoxy resin. In this case, it is easy to adjust the degree of curing of the adhesive layer, the adhesive performance can be further improved, and it is advantageous to have appropriate fluidity and for Y in the above formula 1 to have a value of 3 or less.

[0052] The physical properties of the liquid epoxy resin are not particularly limited. For example, it can have a viscosity of 500 mPa·s to 20,000 mPa·s at 25°C. The liquid epoxy resin can have an epoxy equivalent of 100 to 1000 g / eq.

[0053] The physical properties of the solid epoxy resin are not particularly limited. For example, it can have a softening point of 50°C to 120°C. The solid epoxy resin can have an epoxy equivalent of 100 to 1000 g / eq.

[0054] The thermosetting resin may be contained in an amount of 5 to 50% by weight based on the total solid content of the adhesive layer. Specifically, the thermosetting resin may be contained in an amount of 5% by weight or more, 10% by weight or more, or 15% by weight or more, and 50% by weight or less, 40% by weight or less, or 35% by weight or less based on the total solid content of the adhesive layer. Within such a range, it is advantageous for providing an adhesive layer capable of embedding a semiconductor element without generating voids in a semiconductor manufacturing process.

[0055] The liquid epoxy resin and the solid epoxy resin may be contained in a weight ratio of 1:10 to 1:0.1, 1:5 to 1:0.2, 1:2 to 1:0.5, or 1:2 to 1:1.2. Within such a range, it is advantageous for providing an adhesive layer having sufficient adhesion to a semiconductor element and having Y of the above formula (1) of 3 or less.

[0056] The type of the hardener is not particularly limited, and for example, it may contain at least one of an amine-based compound, an acid anhydride-based compound, an amide-based compound, and a phenol-based compound. Specifically, the amine-based compound may be one or more selected from the group consisting of diaminodiphenylmethane, diethylenetriamine, triethylenetetramine, diaminodiphenylsulfone, and isophoronediamine. The acid anhydride-based compound may be one or more selected from the group consisting of phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, maleic anhydride, tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylnadic anhydride, hexahydrophthalic anhydride, and methylhexahydrophthalic anhydride. The amide-based compound may be a polyamide resin synthesized from dicyandiamide and a dimer of linolenic acid and ethylenediamine. The phenol-based compound may be polyhydric phenols such as bisphenol A, bisphenol F, bisphenol S, fluorene bisphenol, and terpene diphenol; phenol resins obtained by condensation of phenols with aldehydes, ketones, or dienes; modified products of phenols and / or phenol resins; halogenated phenols such as tetrabromobisphenol A and brominated phenol resins; and other imidazoles, BF3-amine complexes, and guanidine derivatives. By selecting the hardener from the above-mentioned ones, the degree of curing of the thermosetting resin can be adjusted, and the mechanical properties of the adhesive can be improved.

[0057] As an example, the hardener may contain a phenol-based compound. As the phenol-based compound, those having a softening point of 60 °C or higher, 80 °C or higher, or 100 °C or higher and 160 °C or lower or 150 °C or lower may be used. The phenol-based compound having a softening point within such a range can make the adhesive layer have a higher tensile modulus at room temperature and have flow characteristics advantageous for embedding the semiconductor element.

[0058] The hardener may be contained in an amount of 1 to 30% by weight based on the total solid content of the adhesive layer. Specifically, the hardener may be contained in an amount of 1% by weight or more, 5% by weight or more, or 10% by weight or more, and 30% by weight or less, 25% by weight or less, or 20% by weight or less based on the total solid content of the adhesive layer. Within such a range, the phenomenon that the adhesive layer flows during the semiconductor manufacturing process can be prevented, and the generation of voids can be effectively prevented.

[0059] The type of the inorganic filler is not particularly limited. For example, it may contain one or more selected from the group consisting of silica, titanium dioxide, aluminum hydroxide, calcium carbonate, magnesium hydroxide, aluminum oxide, talc, and aluminum nitride. By using the inorganic filler of the above-described type, the adhesive strength of the adhesive layer can be improved, and cracks in the semiconductor package can be prevented.

[0060] The average particle size of the inorganic filler may be 0.03 μm to 3 μm. Specifically, the average particle size of the inorganic filler may be 0.04 μm or more, or 0.05 μm or more, and 2.5 μm or less, or 2 μm or less. When the average particle size of the inorganic filler is within the above-described range, the dispersibility of the inorganic filler in the adhesive layer can be improved.

[0061] The inorganic filler may be contained in an amount of 20 to 60% by weight based on the total solid content of the adhesive layer. Specifically, the inorganic filler may be contained in an amount of 20% by weight or more, 30% by weight or more, or 35% by weight or more, and 60% by weight or less, 55% by weight or less, or 50% by weight or less based on the total solid content of the adhesive layer. Within such a range, the mechanical properties of the adhesive layer can be improved, and the mismatch in the coefficient of thermal expansion with the semiconductor chip can be reduced to improve the reliability.

[0062] The adhesive layer may further contain a curing catalyst. Specifically, the curing catalyst may be one selected from the group consisting of phosphorus-based compounds, boron-based compounds, phosphorus-boron-based compounds, imidazole-based compounds, and combinations thereof, but is not limited thereto. By using the curing catalyst, the action of the curing agent and the curing of the adhesive layer can be promoted. Also, the amount of the curing catalyst used can be appropriately selected in consideration of the physical properties of the finally produced adhesive layer and the like.

[0063] The adhesive layer may further contain known additives as necessary. For example, the adhesive layer may further contain a coupling agent, a leveling agent, a dispersant, or a combination thereof.

[0064] The thickness of the adhesive layer can vary depending on the height of the semiconductor element to which the non-conductive film is to be applied. As a non-limiting example, the thickness of the adhesive layer can be controlled to be 1 μm or more or 5 μm or more, and 500 μm or less, 100 μm or less, or 50 μm or less.

[0065] On the other hand, according to another embodiment of the invention, a semiconductor device including a non-conductive film and a semiconductor element, wherein the semiconductor element is embedded by the adhesive layer is provided. The non-conductive film may be the non-conductive film according to the one embodiment.

[0066] The type of the semiconductor element is not particularly limited. For example, it may include bumps used in a flip-chip mounting method.

[0067] The semiconductor device of the other embodiment can be manufactured by forming an adhesive layer on the bump formation surface of the semiconductor element or attaching an adhesive layer, and after passing through a dicing process as necessary, mounting the semiconductor element at a position where it is to be connected, and simultaneously performing metal bonding and sealing by a thermocompression bonding method.

[0068] As described above, when the adhesive layer has a Y value calculated by the above formula (1) of 3 or less, voids are less likely to be generated even when applied to the thermocompression bonding method, and fine-pitch electrodes can be effectively embedded to provide a semiconductor device with excellent reliability.

[0069] On the other hand, according to still another embodiment of the invention, there is provided a method for manufacturing a semiconductor device, including the steps of calculating Y of the above formula (1) for a non-conductive film including an adhesive layer and selecting a non-conductive film including an adhesive layer having a Y value of more than 0 and 3 or less, and applying the selected non-conductive film to an element formation surface of a semiconductor element.

[0070] As described above, when a non-conductive film including an adhesive layer having a Y value calculated by the above formula (1) of 3 or less is used in a semiconductor manufacturing process, voids are less likely to be generated, and fine-pitch electrodes can be effectively embedded to provide a semiconductor device with excellent reliability.

[0071] In the method for manufacturing a semiconductor device, before the semiconductor device manufacturing process, Y of the above formula (1) is calculated to predict in advance the presence or absence of void generation in the non-conductive film, and a non-conductive film in which voids are less likely to be generated is selected and applied to the semiconductor manufacturing process.

[0072] In one example, in the method for manufacturing a semiconductor device, a non-conductive film can be prepared in the form of a die adhesive film having an adhesive layer laminated on a substrate or a dicing die bonding film having an adhesive layer and an adhesive layer sequentially laminated on a substrate. Then, an adhesive layer is attached to the element formation surface of the semiconductor element. When the non-conductive film is a dicing die bonding film, after the dicing process, it is mounted at a position where the semiconductor element is to be connected, and metal bonding and sealing are simultaneously performed by a thermocompression bonding method to manufacture a semiconductor device.

[0073] In another example, in the method for manufacturing the semiconductor device, the above-described adhesive layer can be formed on the element formation surface of the semiconductor element to form a non-conductive film. Then, after passing through a dicing process if necessary, it can be mounted at a position where the semiconductor element is to be connected, and the semiconductor device can be manufactured by simultaneously performing metal bonding and sealing by a thermocompression bonding method.

[0074] The conditions of the thermocompression bonding process are not particularly limited. As an example, the thermocompression bonding process may be performed by applying a pressure of 30 to 150 N at a temperature of about 50°C to 150°C for 2 to 10 seconds, and then heating at a temperature of about 200°C to 300°C for 2 to 10 seconds.

[0075] Since the non-conductive film used in the method for manufacturing the semiconductor device is selected to be less likely to generate voids through the above formula 1, even after passing through a thermocompression bonding process under the above conditions, voids are less likely to be generated, and a semiconductor device with excellent reliability can be provided.

Advantages of the Invention

[0076] The non-conductive film according to one embodiment can effectively prevent the generation of voids during the semiconductor manufacturing process, adhere sufficiently to the semiconductor element, and provide a semiconductor device with excellent reliability.

Modes for Carrying Out the Invention

[0077] Hereinafter, the operation and effects of the invention will be specifically described through specific embodiments of the invention. However, this is presented as an example of the invention and does not limit the scope of the invention in any way.

[0078] Production Example 1: Production of Thermoplastic Resin 100 g of toluene was charged with 59 g of n-butyl acrylate, 10 g of acrylonitrile, 3 g of glycidyl methacrylate, and 28 g of isobutyl methacrylate. Then, the resulting reaction product was reacted at 80°C for about 12 hours to synthesize an acrylate resin having a glycidyl group introduced therein (weight average molecular weight: about 500,000, glass transition temperature: -5°C).

[0079] Production Example 2: Production of Thermoplastic Resin 100 g of toluene was charged with 40 g of n-butyl acrylate, 25 g of ethyl acrylate, 30 g of acrylonitrile, and 5 g of glycidyl methacrylate. Then, the resulting reaction product was reacted at 80°C for about 12 hours to synthesize an acrylate resin having a glycidyl group introduced therein (weight average molecular weight: about 500,000, glass transition temperature: 40°C).

[0080] Production Example 3: Production of Thermoplastic Resin 100 g of toluene was charged with 40 g of butyl acrylate, 30 g of acrylonitrile, 5 g of glycidyl methacrylate, and 25 g of styrene. Then, the resulting reaction product was reacted at 80°C for about 12 hours to synthesize an acrylate resin having a glycidyl group introduced therein (weight average molecular weight: about 700,000, glass transition temperature: 63°C).

[0081] Production Example 4: Production of Thermoplastic Resin 35 g of a phenoxy resin (YP-50 manufactured by KUKDO CHEMICAL, weight average molecular weight: about 55,000, glass transition temperature: 80 to 83°C) was dissolved in 65 g of toluene to prepare a thermoplastic resin.

[0082] Example 1: Production of Non-Conductive Film and Semiconductor Device (1) Production of Adhesive Composition The components described in Table 1 below were added to methyl ethyl ketone in the contents described in Table 1 below and mixed to produce an adhesive composition (solid content: 50% by weight).

[0083] (2) Production of Non-Conductive Film The adhesive composition was applied onto a polyethylene terephthalate film (thickness: 38 μm) which had been subjected to a release treatment using a comma coater, and then dried at 110 °C for 3 minutes to form a B-stage adhesive layer with a thickness of approximately 20 μm.

[0084] (3) Manufacture of semiconductor device A semiconductor element having a plurality of silicon through electrodes, with a copper filler having a height of 15 μm and a pitch of 50 μm as bumps, on which lead-free solder (SnAgCu) was formed to a height of 3 μm, was prepared.

[0085] After positioning the adhesive layer of the non-conductive film so as to abut on the surface of the semiconductor element on which the bumps were formed, vacuum lamination was performed at 80 °C. Then, the polyethylene terephthalate film was peeled off from the adhesive layer.

[0086] Thereafter, the substrate and the semiconductor element were arranged such that the bumps of the semiconductor element were positioned on the connection pads of the substrate having connection pads with a pitch of 50 μm. Then, using a thermocompression bonder, the laminate of the substrate and the semiconductor element was pressed at 70 °C for 3 seconds with a pressure of 100 N, and then heated at 260 °C for 4 seconds to perform thermocompression bonding.

[0087] Examples 2 to 4 and Comparative Examples 1 to 3: Production of Non-Conductive Film and Semiconductor Device An adhesive composition, a non-conductive film, and a semiconductor device were manufactured in the same manner as in Example 1, except that the composition of the adhesive composition of Example 1 was changed as described in Table 1 below.

[0088]

Table 1

[0089] The content (parts by weight) in Table 1 above is the content of the solid component.

[0090] RE-310S: Liquid epoxy resin (Nippon Kayaku Co., Ltd., bisphenol A type epoxy resin, epoxy equivalent: 180 g / eq) EOCN-1020-70: Solid epoxy resin (manufactured by Nippon Kayaku, cresol novolak type epoxy resin, epoxy equivalent 199 g / eq, softening point: 70 °C) KA-1165: Phenolic resin (product of DIC, bisphenol A novolak resin, hydroxyl equivalent 119 g / eq, softening point: 125 °C) GPH-103: Phenolic resin (manufactured by Nippon Kayaku, hydroxyl equivalent 230 g / eq, softening point: 103 °C) SC-2050: Spherical silica, ADMATEC, average particle size of about 400 nm 2P4MHZ: 2-Phenyl-4-methyl-5-hydroxymethylimidazole KBM-403: Silane coupling agent (product of Shin-Etsu, 3,3-glycidoxypropyl trimethoxysilane)

[0091] Test Example: Evaluation of Physical Properties of Non-Conductive Film and Performance of Semiconductor Device (1) Difference (ΔT) between the heat generation start temperature and the maximum heat generation temperature of the adhesive layer The heat generation start temperature and the maximum heat generation temperature of the adhesive layer were determined through differential scanning calorimetry (DSC). The DSC analysis was performed under the condition of a heating rate of 10 °C / min and in the temperature range from 30 °C to 300 °C.

[0092] As a result of the DSC analysis, a thermal analysis diagram was obtained in which the horizontal axis is labeled as temperature and the vertical axis is labeled as heat flow. In the thermal analysis diagram, the start point (onset) where the extension line of the heat generation peak intersects the baseline was defined as the heat generation start temperature, and the peak point of the heat generation peak was defined as the maximum heat generation temperature.

[0093] (2) Gel time (G) of the adhesive layer The gel time of the B-stage adhesive layer was measured on a hot plate at 200°C. Specifically, after laminating the adhesive layers until they reached a thickness of 120 μm, pressure was applied using a roll laminator at 60°C. The test piece thus obtained was cut into a circle with a diameter of 10 mm. The cut test piece was placed on a hot plate at 200°C and stirred with a stirring rod to draw a small circle on the surface of the test piece. Stirring was continued until the viscosity of the test piece increased and it finally gelled and lost its fluidity. The time from when the test piece was placed on the hot plate until it gelled and lost its fluidity was measured in seconds (sec). Such measurements were carried out twice. If the difference between the two measured values was within 10% of the lower value of the measured values, the gel time was recorded as the average value of the two measured values. If it exceeded 10%, the measurement was carried out three times, and the gel time was recorded as the average value of the three measured values.

[0094] (3) Minimum melt viscosity (η) of the adhesive layer After laminating the adhesive layers until they reached a thickness of 400 μm, pressure was applied using a roll laminator at 60°C. The test piece thus obtained was cut into a circle with a diameter of 20 mm. Using a MARS device from HAKKE, the viscosity of the cut test piece was measured under the conditions of 1000 Pa and a heating rate of 10°C / min. The lowest viscosity value among the measured viscosity values was defined as the minimum melt viscosity.

[0095] (4) Evaluation of voids (Mold Void Test) Through an IR Microscope, it was evaluated that if the area occupied by voids appearing between the semiconductor element and the substrate was 3% or less, it was considered qualified (○), and if it exceeded 3%, it was considered unqualified (×).

[0096] (5) Evaluation of conduction For the semiconductor device, it was evaluated that if the daisy chain connection could be confirmed, it was considered qualified (○), and if the daisy chain connection could not be confirmed, it was considered unqualified (×).

[0097] (6) Evaluation of the connection state The semiconductor device was polished so that the cross-section of the connection part was exposed, and the cross-section of the exposed connection part was observed with an optical microscope. If no trapping of the adhesive composition was seen in the connection part and the solder was sufficiently wet on the wiring, it was evaluated as pass (○), and otherwise as fail (×).

[0098] (7) Evaluation of Fillet voids After connecting the semiconductor device in the thermocompression bonding process, the fillet formed at the edge of the semiconductor element was confirmed with an IR Microscope. If there were no voids with a diameter of 1 μm or more in the fillet, it was evaluated as pass (○), and if there were voids with a diameter of 1 μm or more, it was evaluated as fail (×).

[0099]

Table 2

[0100] In Table 2 above, Y is the value calculated by the aforementioned formula 1.

[0101] Referring to Table 2 above, in Examples 1 to 4 where Y calculated by the aforementioned formula 1 is 3 or less, it is confirmed that generation of voids can be suppressed between the base material and the semiconductor element and in the fillet formed at the edge of the semiconductor element, and thus a semiconductor device with an excellent metal connection state can be provided. On the other hand, in Comparative Examples 1 to 3 where Y calculated by the aforementioned formula 1 exceeds 3, it is confirmed that voids are generated between the base material and the semiconductor element and in the fillet formed at the edge of the semiconductor element, and the metal connection state is poor.

Claims

1. A non-conductive film comprising a thermoplastic resin, a thermosetting resin, a curing agent, and an inorganic filler, and comprising an adhesive layer in which Y in the following formula 1 is more than 0 and 3 or less. [Formula 1] Y = (ΔT × G) ２ / (5.88 × η) In the above formula 1, ΔT is the difference between the heat generation start temperature and the maximum heat generation temperature of the adhesive layer measured at a temperature increase rate of 10 ° C / min and 30 ° C to 300 ° C through differential scanning calorimetry, G is the gelation time at 200 ° C measured in seconds for the adhesive layer, and η is the minimum melt viscosity measured in units of Pa·s for the adhesive layer.

2. The non-conductive film according to claim 1, wherein ΔT in the formula 1 is 1 ° C to 20 ° C.

3. The non-conductive film according to claim 1, wherein G in the formula 1 is 5 seconds to 30 seconds.

4. The non-conductive film according to claim 1, wherein η in the formula 1 is 10 Pa·s to 5000 Pa·s.

5. The non-conductive film according to claim 1, wherein the thermoplastic resin comprises two or more thermoplastic resins having different glass transition temperatures.

6. The non-conductive film according to claim 1, wherein the thermoplastic resin comprises a first thermoplastic resin having a glass transition temperature of -10 ° C to 50 ° C and a second thermoplastic resin having a glass transition temperature of more than 50 ° C and 100 ° C or less.

7. The non-conductive film according to claim 6, wherein the first thermoplastic resin comprises a first copolymer produced from an alkyl (meth) acrylate having 1 to 12 carbon atoms, a (meth) acrylate containing an epoxy group, and acrylonitrile.

8. The non-conductive film according to claim 6, wherein the second thermoplastic resin is a second copolymer produced from an alkyl (meth) acrylate having 1 to 12 carbon atoms, a (meth) acrylate containing an epoxy group, acrylonitrile, and styrene; or one or more phenoxy resins selected from the group consisting of bisphenol A type phenoxy resin, bisphenol F type phenoxy resin, bisphenol A / F type phenoxy resin, and fluorene-based phenoxy resin.

9. The non-conductive film according to claim 6, wherein the first and second thermoplastic resins are contained in a weight ratio of 1:10 to 1:0.

1.

10. The non-conductive film according to claim 1, wherein the thermosetting resin comprises a liquid epoxy resin and a solid epoxy resin.

11. Comprising the non-conductive film according to claim 1 and a semiconductor element, The semiconductor device is a semiconductor device embedded by the adhesive layer. **Claim 12** The semiconductor device according to claim 11, wherein the semiconductor element includes bumps. **Claim 13** A step of calculating Y of the following formula 1 for a non-conductive film including an adhesive layer and selecting a non-conductive film including an adhesive layer in which Y is more than 0 and 3 or less; A step of applying the selected non-conductive film to the element formation surface of the semiconductor element, the method for manufacturing a semiconductor device including the steps. [Formula 1] Y = (ΔT × G) ２ / (5.88 × η) In the above formula 1, ΔT is the difference between the heat generation start temperature and the maximum heat generation temperature of the adhesive layer measured at a temperature increase rate of 10 ° C / min and 30 ° C to 300 ° C through differential scanning calorimetry, G is the gelation time at 200 ° C measured in seconds for the adhesive layer, and η is the minimum melting viscosity measured in units of Pa·s for the adhesive layer.

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