Semiconductor processing apparatus, process chamber thereof, and method for detecting tray

Abstract

This application discloses a semiconductor process apparatus, its process chamber, and a method for detecting a tray. The process chamber includes a process chamber body, a tray, a first heater, a rotating shaft assembly, and an infrared thermometer. The first heater includes a first heating plate. The tray is rotatably provided on the upper surface of the first heating plate. The rotating shaft assembly includes a rotating shaft and a temperature marking member. The rotating shaft is inserted into the first heating plate and rotatably engaged with the first heating plate. By connecting the first end of the rotating shaft to the tray, the rotating shaft can rotate together with the tray. The second end of the rotating shaft extends and protrudes from the bottom surface of the first heating plate. The temperature marking member is provided at the second end of the rotating shaft and can rotate together with the rotating shaft. The infrared thermometer is used to detect the temperature of the rotating temperature marking member at a predetermined temperature detection position, thereby periodically obtaining the temperature of the temperature marking member.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular, to a semiconductor process apparatus, a process chamber, and a method for detecting a tray.

Background Art

[0002] In the manufacturing process of semiconductor wafers, the epitaxial growth process is a very important element. The epitaxial growth process is to grow a single crystal layer having the same crystal direction as that of the wafer on the wafer surface with certain requirements, and to expand the crystal on the wafer surface.

[0003] In related technologies, an epitaxial growth apparatus includes a tray, an upper heater, and a lower heater. The tray is provided between the upper heater and the lower heater, and the upper heater and the lower heater jointly heat the tray. The tray is equipped with a rotation function to uniformly heat the wafers placed on the tray by rotation. Since a heat-insulating felt is coated outside the upper heater and the lower heater, an infrared high-temperature thermometer cannot be directly mounted above the tray to detect the temperature of the tray. Since the temperature and rotation speed of the tray are closely related to the uniformity of the wafer epitaxial thin film, a temperature detection device for detecting the temperature of the tray and a speed measurement device for detecting the rotation speed of the tray are provided in the epitaxial growth apparatus. However, the structure of the epitaxial growth apparatus becomes too complicated due to the temperature detection device and the speed measurement device.

Summary of the Invention

Problems to be Solved by the Invention

[0004] This application discloses a semiconductor process apparatus, a process chamber, and a method for detecting a tray, which can simultaneously detect the temperature and rotation speed of the tray, and simplify the structural layout of the apparatus.

Means for Solving the Problems

[0005] To solve the above problems, this application adopts the following technical solutions.

[0006] In a first aspect, the present application provides a process chamber of a semiconductor process apparatus, including a process chamber body, a tray provided in the process chamber body, a first heater, a rotation shaft assembly, and an infrared thermometer provided outside the process chamber body. The first heater includes a first heating plate. The tray is rotatably provided on the upper surface of the first heating plate. The rotation shaft assembly includes a rotation shaft and a temperature marking member. The rotation shaft is inserted into the first heating plate and rotatably engaged with the first heating plate. By connecting the first end of the rotation shaft to the tray, the rotation shaft can rotate together with the tray. The second end of the rotation shaft extends and protrudes from the bottom surface of the first heating plate. The temperature marking member is provided at the second end of the rotation shaft and can rotate together with the rotation shaft. The infrared thermometer is used to detect the temperature of the temperature marking member rotated to a predetermined temperature detection position, thereby periodically obtaining the temperature of the temperature marking member.

[0007] In a second aspect, the present application provides a semiconductor process apparatus including the process chamber according to the first aspect of the present application.

[0008] In a third aspect, the present application provides a detection method for a tray, which is applied to the process chamber according to the first aspect of the present application. The detection method includes the steps of: starting the infrared thermometer, and periodically receiving, as the temperature of the tray, the temperature of the temperature marking member detected by the infrared thermometer when the temperature marking member rotates to the predetermined temperature detection position; comparing the temperatures of all the temperature marking members obtained within a detection time, and determining the stability of the temperature of the tray based on the temperatures of all the temperature marking members; and calculating the rotation speed of the tray based on the number of acquisitions of the temperature of the tray per unit time.

Advantages of the Invention

[0009] The technical solution used in the present application can achieve the following beneficial effects.

[0010] In the semiconductor processing apparatus and its process chamber disclosed in the present application, the first end of the rotating shaft is connected to the tray, and the second end of the rotating shaft extends to protrude from the bottom surface of the first heating plate, so that the tray can be ensured to be rotatably engaged with the first heating plate by the rotating shaft. Since the temperature marking member is provided at the second end of the rotating shaft, it can rotate in the circumferential direction together with the rotating shaft.

[0011] When detecting the temperature of the tray, as the temperature marking member rotates, the infrared thermometer can periodically detect the temperature of the temperature marking member at a predetermined temperature detection position, thereby periodically obtaining the temperature of the tray, and further judging the stability of the temperature of the tray from the temperatures of all the temperature marking members obtained within the detection time, thereby accurately detecting the temperature of the tray and simultaneously detecting the heating environment.

[0012] At the same time, when detecting the rotation speed of the tray, the rotation speed of the tray can be calculated based on the number of acquisitions of the temperature of the tray per unit time.

[0013] Compared with the related art, the infrared thermometer of the present application can not only be used to detect the temperature of the tray, but also can be used as a detection device for the rotation speed of the tray. In this way, there is no need to separately add a speed measurement device, thereby effectively simplifying the structural layout of the device.

Brief Description of the Drawings

[0014] The drawings described here are used to provide a further understanding of the present application, constitute a part of the present application, and the exemplary embodiments and their descriptions of the present application are used to explain the present application and do not unduly limit the present application.

[0015]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Embodiments for Carrying Out the Invention

[0016] To make the object, technical solution and advantages of the present application clearer, the following will clearly and completely describe the technical solution of the present application with reference to specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only some embodiments of the present application, not all embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative labor shall fall within the protection scope of the present application.

[0017] In the related art, a temperature detection hole opening axially toward the heating element is opened in the upper heating element, so that the infrared thermometer indirectly obtains the temperature of the tray by detecting the temperature of the temperature detection hole. However, since the tray is jointly heated by the upper heating element and the lower heating element, it is also necessary to monitor the stability of the ambient temperature of the lower heating element, thereby indirectly obtaining the temperature of the tray.

[0018] The following will describe in detail the technical solutions disclosed in each embodiment of the present application with reference to the drawings.

[0019] In an epitaxial growth apparatus of related art, to solve the technical problem of structural complexity caused by providing a temperature detection device and a speed measurement device respectively, an embodiment of the present application provides a process chamber of a semiconductor process device.

[0020] Referring to FIGS. 1 to 11, the process chamber disclosed in the embodiment of the present application includes a process chamber body 100, a tray 200, a first heating body, a rotating shaft assembly 400, and an infrared thermometer 500. Here, the process chamber body 100 is a basic member of the process chamber and can provide an attachment base. Specifically, the tray 200, the first heating body, and the rotating shaft assembly 400 are provided inside the process chamber body 100. A process space S is formed inside the process chamber body 100, and the process space S provides a process environment for the wafer to be processed. Further, in order to maintain the high-temperature process environment inside the process chamber body 100, the process chamber further includes a heat insulation felt provided outside the process chamber body 100, and an induction coil is provided around the heat insulation felt. The induction coil inductively heats the first heating body. Further, the first heating body provides a high-temperature process environment inside the tray 200 and the process chamber body 100.

[0021] The tray 200 is used to place the wafer to be processed, that is, in the process of process treatment, the tray 200 places the wafer. When performing the process treatment, the wafer needs to be in a high-temperature state. For example, in a silicon epitaxial growth process, the temperature of the process environment can reach 1500 - 1800 °C. To ensure the achievement of a stable high-temperature process environment, the process space S is heated and the temperature is raised by a heating body.

[0022] In the embodiment of the present application, the tray 200 is rotatably provided on the upper surface of the first heating plate 300, that is, relative rotation between the two can be realized.

[0023] The rotating shaft assembly 400 includes a rotating shaft 410 and a temperature mark member 420. The rotating shaft 410 is inserted into the first heating plate 300 and rotatably engaged with the first heating plate 300. By connecting the first end of the rotating shaft 410 to the tray 200, the rotating shaft 410 can rotate together with the tray 200, and the second end of the rotating shaft 410 extends and protrudes from the bottom surface of the first heating plate 300.

[0024] Specifically, the first heating plate 300 can provide a placement function for the tray 200. The tray 200 and the rotating shaft 410 can achieve synchronous movement, and the tray 200 can achieve relative rotation with the first heating plate 300 through the rotating shaft 410. Since the rotating shaft 410 is inserted into the first heating plate 300, there is a mutual position restricting relationship between the rotating shaft 410 and the first heating plate 300, thereby optimizing the mounting reliability between the tray 200 and the first heating plate 300. Further, a receiving groove 370 may be provided on the upper surface of the first heating plate 300. The receiving groove 370 is used for placing the tray 200, and the mounting reliability of the tray 200 can be further optimized. The receiving groove 370 is preferably a circular groove.

[0025] Also, since the second end of the rotating shaft 410 extends and protrudes from the bottom surface of the first heating plate 300, "protruding" here means that the second end of the rotating shaft 410 extends beyond the bottom surface of the first heating plate 300, and the bottom surface of the first heating plate 300 is separated from the process space S. That is, the second end of the rotating shaft 410 extends outside the process space S but is still located within the process chamber body 100. Specifically, reference can be made to FIGS. 1 to 3.

[0026] In the embodiment of the present application, the temperature mark member 420 is provided at the second end of the rotating shaft 410 and can rotate together with the rotating shaft 410. The infrared thermometer 500 is used to detect the temperature of the temperature mark member 420. The temperature mark member 420 is used to be detected by the infrared thermometer 500 when it rotates to a predetermined temperature detection position, thereby periodically obtaining the temperature of the temperature mark member 420.

[0027] As can be understood, the infrared thermometer 500 is provided outside the process chamber body, and in this way, by being provided inside the chamber, damage caused by high temperatures can be avoided. The infrared thermometer 500 can detect, for example, the temperature of the temperature marking member 420 that has rotated to a predetermined temperature detection position through a detection window provided in the process chamber body 100. When measuring the temperature of the tray 200, since there is a heat conduction relationship between the rotating shaft 410 and the tray 200, the infrared energy radiated from the second end of the rotating shaft 410 can be directly detected by the infrared thermometer 500, that is, the temperature of the tray 200 can be indirectly detected. Compared with the solution of indirectly obtaining the temperature of the tray by detecting the temperature of the heating element in the related art, the detection accuracy for the temperature of the tray 200 is significantly and effectively improved. In the embodiment of the present application, since the temperature marking member 420 is provided at the second end of the rotating shaft 410, the infrared thermometer 500 can detect the temperature of the tray 200 in the process space S by detecting the temperature of the temperature marking member 420 outside the process space S, and at the same time, the ambient temperature of the first heating element can also be detected.

[0028] The temperature marking member 420 realizes circumferential rotation as the rotating shaft 410 and the tray 200 rotate. In this way, the temperature marking member 420 can periodically rotate to a predetermined temperature detection position that corresponds to the infrared thermometer 500, so that the infrared thermometer 500 can periodically detect the temperature of the temperature marking member 420, thereby periodically obtaining the temperature of the tray. Furthermore, the stability of the temperature of the tray 200 is judged from all the temperatures of the temperature marking member 420 obtained within the detection time, thereby accurately detecting the temperature of the tray 200.

[0029] At the same time, when detecting the rotation speed of the tray 200, the rotation speed of the tray 200 can be calculated based on the number of acquisitions per unit time of the temperature of the tray 200.

[0030] Specifically, when the tray 200 is rotating, the temperature mark member 420 passes through a predetermined temperature detection position during rotation, and the acquisition count can be recorded once for each pass. Note that the acquisition count of the infrared thermometer 500 with respect to the temperature of the temperature mark member 420 can be represented by the detected temperature data. Specifically, as shown in FIG. 6, in the relationship diagram of the temperature and time detected by the infrared thermometer 500, the abrupt change in the temperature detected by the infrared thermometer 500 may be an abrupt change from the peak temperature to the bottom temperature, or an abrupt change from the bottom temperature to the peak temperature. Here, the number of times of recording the peak temperature within the detection time is the above-mentioned acquisition count.

[0031] In such a structural layout, the circumferential region at the second end of the rotating shaft 410 is evenly divided by the temperature mark member 420. When the temperature mark member 420 is a single unit structure, the circumferential region at the second end of the rotating shaft 410 is the entire 360° region. In this way, if the acquisition count of the temperature of the temperature mark member 420 per unit time can be detected, the number of evenly divided regions during its rotation can be obtained, and the sum of the numbers of these evenly divided regions represents the rotation speed of the rotating shaft 410, thereby representing the rotation speed of the tray 200.

[0032] The process chamber further includes a control system. The control system includes a reading unit. The reading unit can read the acquisition count of the tray 200 detected per unit time, which is the acquisition count of the temperature detected by the infrared thermometer 500 per unit time. Then, the control system calculates the rotation speed of the tray 200 based on the acquisition count. To facilitate the calculation, the control system can use a complete peak temperature interval and bottom temperature interval as one calculation unit.

[0033] Specifically, by multiplying the ratio of the number of acquisitions to the number of mark structures (e.g., blades) included in the temperature mark member 420 by 2π, the rotational angle of the tray 200 per unit time can be obtained, and thereby the rotational speed of the tray 200 can be obtained. The above calculation can refer to the formula ω = 2nπ / mT, where ω is the angular velocity of the tray 200, n is the number of acquisitions, and m is the number of mark structures (e.g., blades) included in the temperature mark member 420.

[0034] Compared with the related art, the infrared thermometer 500 of the embodiment of the present application can not only be used to detect the temperature of the tray 200, but also can be used as a detection device for the rotational speed of the tray 200. In this way, there is no need to separately add a speed measurement device, thereby effectively simplifying the structural layout of the device. In the embodiment of the present application, the specific type of the temperature mark member 420 is not limited. For example, the temperature mark member 420 may include bumps provided on the circumferential side wall of the second end of the rotating shaft 410.

[0035] In another embodiment, as shown in FIGS. 1 to 5, the temperature mark member 420 may include a plurality of blades 421, and the plurality of blades 421 are evenly arranged along the circumferential direction of the rotating shaft 200.

[0036] In such a structural layout, the detection path of the infrared thermometer 500 is provided offset from the rotating shaft 410. In the detection path of the infrared thermometer 500, which is a predetermined temperature detection position, the blades 421 rotate to this position in sequence and the temperature is detected by the infrared thermometer 500. At this time, it is the peak temperature. Specifically, referring to FIG. 5, when the blades 421 and the detection path of the infrared thermometer 500 are offset, the temperature detected by the infrared thermometer 500 is the bottom temperature. Specifically, reference can be made to FIG. 4.

[0037] As shown in FIGS. 2 and 11, the temperature marking member 420 includes an impeller 422 provided at the second end of the rotating shaft 410. The impeller 422 is fitted on the rotating shaft 410, and the blades 421 are connected to the impeller 422 and distributed along the circumferential direction. A fastener 401 may be provided at the second end of the rotating shaft 410, and thereby the impeller 422 is positionally restricted by the fastener 401.

[0038] In an alternative form, as shown in FIGS. 8 to 10, a gas flow path is provided in the first heating plate 300. The gas flow path includes an exhaust flow path 350 which is used to transport the driving gas. The first heating plate 300 includes an exhaust port 302 provided on its upper surface. The exhaust port 302 communicates with the exhaust flow path 350 and is provided corresponding to the tray 200. The tray 200 includes a driving part 210 provided on its bottom surface. The driving gas sent out through the exhaust port 302 can push the driving part 210 to rotate the tray 200.

[0039] In such a structural layout, the driving gas fed into the gas flow path can be sent out from the exhaust flow path 350 and the exhaust port 302. The driving gas can exert a driving action on the bottom surface of the tray 200. Due to the presence of the driving part 210, the driving gas can rotate the tray 200 by driving the driving part 210. As can be seen from this, the tray 200 in the embodiment of the present application adopts a solution driven by gas, thereby avoiding the drawback of being difficult to withstand high temperatures existing in the conventional solution of driving the tray 200 by a motor. Also, in the structural layout between the tray 200 and the first heating plate 300, there is a vertical component in the driving action of the driving gas on the tray 200, and this vertical component can drive the tray 200 to float at a certain distance, thus separating the tray 200 from the first heating plate 300, which is advantageous for realizing the rotation of the tray 200. There is a horizontal component in the driving action of the driving gas on the tray 200, and this horizontal component can drive the rotation of the tray 200.

[0040] The embodiments of the present application do not limit the specific structure of the driving part 210, and it may specifically be a concave groove or a protrusion. When the driving part 210 is a concave groove, the driving gas applies a driving action by pushing the groove wall, and when the driving part 210 is a protrusion, the driving gas applies a driving action by pushing the side wall of the protrusion.

[0041] In an alternative form, as shown in FIG. 10, the driving part 210 is a strip-shaped groove, and the strip-shaped groove has a long extension length. In this way, the acting area of the driving gas on the groove wall of the strip-shaped groove can be increased, thereby improving the driving efficiency. In order to further optimize the driving effect of the driving gas on the strip-shaped groove, a plurality of driving parts 210 may be provided, whereby the acting area of the driving gas can be further increased. The strip-shaped grooves may all be configured to be provided obliquely around the rotation axis 410, whereby the driving action applied by the driving gas along the circumferential direction of the tray 200 can be increased. Furthermore, the inclination directions of the plurality of strip-shaped grooves may be provided to be the same. In this way, the interference caused by the strip-shaped grooves being arranged in opposite directions can be avoided, and it is advantageous that the driving gas applies a driving action in the same direction.

[0042] Furthermore, a plurality of strip-shaped grooves are provided symmetrically about the center of the tray 200.

[0043] When the driving part 210 is a concave groove, the driving part 210 may be selected as a spiral groove. When the driving part 210 is a protrusion, the driving part 210 may be a rib, a spiral protrusion, or the like.

[0044] In an alternative form, as shown in FIG. 8, the first heating plate 300 includes at least three exhaust ports 302, and the at least three exhaust ports 302 are evenly distributed along the circumferential direction of the central axis of the tray 200. In such a layout, based on the principle that three points form a plane, the driving gas sent out from the at least three exhaust ports 302 can form at least three action regions on the bottom surface of the tray 200, and it is obvious that the driving stability and reliability for the tray 200 can be effectively improved compared with the solutions for one action region and two action regions.

[0045] Regarding the number of the exhaust ports 302, it is not specifically limited in the embodiments of the present application. Besides the three shown in FIG. 8, it may also be one, two, four, five, etc.

[0046] In an alternative form, as shown in FIGS. 7 to 9, the gas flow path further includes an intake flow path. One end of the intake flow path is used to communicate with an external gas source, the other end of the intake flow path communicates with the exhaust flow path, thereby transporting the driving gas into the exhaust flow path. The intake flow path is arranged in a horizontal plane, and the exhaust flow path 350 is provided inclined with respect to the vertical direction. In such a structural layout, due to the layout that the exhaust flow path 350 is provided inclined with respect to the vertical direction, the driving gas transported in the intake flow path in the horizontal plane can be transported upward and sent out from the exhaust port 302, and the exhaust direction and the tray 200 are provided to form a predetermined angle, thereby rotating the tray 200. Of course, in the embodiments of the present application, the specific cooperation relationship between the exhaust flow path 350 and the intake flow path is not limited, and the exhaust flow path 350 may further be an arc-shaped flow path, which can send out the driving gas transported in the horizontal plane upward from the exhaust port 302, and the exhaust direction and the tray 200 are provided to form a predetermined angle.

[0047] In such a structural layout, since the exhaust flow path 350 is a straight flow path, the axis of the exhaust flow path 350 is collinear with the axis of the exhaust port 302. The straight flow path is easy to be directly processed and formed, which facilitates the setting of the inclination angle of the axis of the exhaust flow path with respect to the central axis of the tray 200, thereby engaging with the driving part 210 on the bottom surface of the tray 200 and optimizing the driving effect of the driving gas.

[0048] Here, the magnitude of the included angle between the axis of the exhaust flow path 350 and the central axis of the tray 200 is a. The included angle is an obtuse angle, and the included angle directly affects the inclination degree of the exhaust flow path 350. Specifically, the included angle may be 120°, 130°, 140°, etc.

[0049] Furthermore, the intake flow path includes a feeding sub-flow path, a distribution sub-flow path, and a plurality of transport sub-flow paths. The first end of the feeding sub-flow path is used to communicate with an external gas source, the second end of the feeding sub-flow path communicates with the intake end of the distribution sub-flow path. The distribution sub-flow path has a plurality of exhaust ends, and the intake ends of the plurality of transport sub-flow paths communicate with the plurality of intake ends of the distribution sub-flow path in a one-to-one correspondence. At least three exhaust ports 302 are opened on the upper surface of the first heating plate. The exhaust flow path 350 includes at least three exhaust sub-flow paths, and each exhaust sub-flow path communicates with each exhaust port 302 in a one-to-one correspondence. The exhaust end of each transport sub-flow path communicates with one of the exhaust sub-flow paths. In such a structural layout, the external gas source can transport the driving gas into the feeding sub-flow path, and the driving gas can evenly distribute the driving gas through the distribution sub-flow path. Then, the driving gas is respectively transported to the plurality of transport sub-flow paths, and further transported to the exhaust sub-flow path communicating therewith through each transport sub-flow path, and finally sent out through the exhaust port 302 communicating with the exhaust sub-flow path. Such a structural layout can avoid the driving gas of different components being sent out from different exhaust ports 302, thereby optimizing the uniformity of the driving effect of the driving gas on the tray 200.

[0050] In a preferred embodiment, as shown in FIGS. 7 to 9, the intake air passage includes a feed sub-passage 310, a distribution sub-passage 320, a first transport sub-passage 330, and a second transport sub-passage 340. The feed sub-passage 310 extends along a first horizontal direction (i.e., the vertical direction in FIG. 7). The extending direction of the distribution sub-passage 320 is perpendicular to the first horizontal direction (i.e., perpendicular to the vertical direction in FIG. 7). The first end of the feed sub-passage 310 communicates with an external gas source via an air inlet 301, and the second end of the feed sub-passage 310 communicates with the distribution sub-passage 320. For example, the second end of the feed sub-passage 310 communicates with an intake end located at the center of the distribution sub-passage 320. In this way, the distances that the driving gas entering the distribution sub-passage 320 reaches the two exhaust ends of the distribution sub-passage 320 after being split are made the same. There are two transport sub-passages, namely the first transport sub-passage 330 and the second transport sub-passage 340. Both communicate with the two exhaust ends of the distribution sub-passage 320 respectively. The first transport sub-passage 330 and the second transport sub-passage 340 are symmetrically arranged with respect to the feed sub-passage 310. One end of the distribution sub-passage 320, the first transport sub-passage 330, and the second transport sub-passage 340 is provided with a through-hole 303 on the outer surface of the first heating plate 300, and a sealing material 304 is provided in each through-hole 303. There are three exhaust ports 302, which are evenly distributed along the circumferential direction of the central axis of the tray 200. There are three exhaust sub-passages, namely the first exhaust sub-passage 305, the second exhaust sub-passage 306, and the third exhaust sub-passage 307. The first exhaust sub-passage 305 communicates with the feed sub-passage 310, the second exhaust sub-passage 306 communicates with the first transport sub-passage 330, and the third exhaust sub-passage 307 communicates with the second transport sub-passage 340. The first exhaust sub-passage 305, the second exhaust sub-passage 306, and the third exhaust sub-passage 307 communicate with the three exhaust ports 302 in a one-to-one correspondence respectively.

[0051] In such a structural layout, an external gas source can transport driving gas into the feed sub-channel 310. The driving gas can be evenly distributed through the distribution sub-channel 320. Then, the driving gas is transported to the first transport sub-channel 330 and the second transport sub-channel 340 respectively. In the feed sub-channel 310, the driving gas can be sent out through the first exhaust sub-channel 305 and the corresponding exhaust port 302. In the first transport sub-channel 330, the driving gas can be sent out through the second exhaust sub-channel 306 and the corresponding exhaust port 302. In the second transport sub-channel 350, the driving gas can be sent out through the third exhaust sub-channel 307 and the corresponding exhaust port 302. Such a structural layout can avoid sending out driving gas of different components from different exhaust ports 302, thereby optimizing the uniformity of the driving effect on the tray 200 by the driving gas.

[0052] The through-hole 303 enables easy processing of the distribution sub-channel 320, the first transport sub-channel 330, and the second transport sub-channel 340. The sealing material 304 can ensure the airtightness of the distribution sub-channel 320, the first transport sub-channel 330, and the second transport sub-channel 340. Here, the sealing material 304 may be selected from a gas flow path plug, sealing rubber, etc.

[0053] Naturally, in the embodiments of the present application, the specific forming method of the intake flow path in the first heating plate 300 is not limited. In another embodiment, the first heating plate 300 may include a first sub-heating plate and a second sub-heating plate. Intake concave grooves are provided oppositely on the lower surface of the first sub-heating plate and the upper surface of the second sub-heating plate. By combining the first sub-heating plate and the second sub-heating plate, the oppositely provided intake concave grooves form complete feed sub-channel 310, distribution sub-channel 320, first transport sub-channel 330, and second transport sub-channel 340. In such a structural layout, it is not necessary to provide the aforementioned through-hole 303.

[0054] In an alternative form, the axes of at least three exhaust ports 302 are all provided to be inclined around the rotation axis 410, and the inclination directions are the same. When installed in this way, when the driving gas sent out from the exhaust port 302 enters the bottom surface of the tray 200, it forms an angle with the bottom surface of the tray 200, thereby ensuring that there are vertical and horizontal components in the driving action of the driving gas on the tray 200. The vertical component can drive the floating of the tray 200, and the horizontal component can act on the driving part 210 to rotate the tray 200.

[0055] Moreover, since the inclination directions of the axes of the exhaust ports 302 are the same, it can be ensured that there are inclination characteristics in the same direction on the axes of these exhaust ports 302, and it is easier for the driving actions of the horizontal components respectively belonging to the driving gases sent out from different exhaust ports 302 on the tray 200 to be consistent, thereby optimizing the driving effect.

[0056] In an alternative form, as shown in FIGS. 2 and 11, the process chamber further includes a sleeve 600. The first heating plate 300 has a through hole 360 penetrating its upper and lower surfaces. The sleeve 600 is fitted outside the rotation axis 410 and is provided between the rotation axis 410 and the hole wall of the through hole 360. When installed in this way, the sleeve 600 can support the rotation axis 410 and the hole wall of the through hole 360, thereby preventing the distortion of the rotation axis 410. The rotation axis 410 is usually made of wear-resistant material, thereby reducing the wear degree of the rotation axis 410.

[0057] Furthermore, as shown in FIG. 11, a first annular stepped groove 361 is provided in the through hole 360, and the sleeve 600 is provided in the first annular stepped groove 361. In such a structural layout, the first annular stepped groove 361 provides a housing space for the sleeve 600, and in this way, the compactness of the structure can be improved. And the stepped surface of the first annular stepped groove 361 can support and position-regulate the sleeve 600.

[0058] Furthermore, as shown in FIGS. 8, 10, and 11, a second annular stepped groove 362 is further provided in the through hole 360. The first annular stepped groove 361 and the second annular stepped groove 362 are arranged in order from top to bottom along the through hole 360. The tray 200 includes an annular engaging portion 220 provided on its bottom surface. The annular engaging portion 220 is fitted outside the sleeve 600 and is provided in the second annular stepped groove 362.

[0059] In such a structural layout, the through hole 360 is a multi-step stepped hole. The second annular stepped groove 362 provides an accommodation space for the annular engaging portion 220. The annular engaging portion 220 receives a radial inward position restricting action of the sleeve 600 and further receives a radial outward position restricting action of the groove side wall of the second annular stepped groove 362, thereby optimizing the positioning action on the tray 200.

[0060] In an alternative form, the process chamber further includes a second heater 700, a first end cap, and a second end cap. The first heater further includes a first arc-shaped heating member connected to the first heating plate 300. The second heater 700 includes a second heating plate and a second arc-shaped heating member. The first heater and the second heater are provided opposite to each other. The first end cap is externally fitted to the first end of the first heater and the first end of the second heater 700. The second end cap is externally fitted to the second end of the first heater and the second end of the second heater 700. The first heating plate and the second heating plate are provided opposite to each other, and a process space S is formed therebetween.

[0061] Specifically, the first heating plate 300 is connected to the first arc-shaped heating member and surrounds it to form a semi-circular first heating body that penetrates along the axial direction. A first heating chamber is formed between the first heating plate and the first arc-shaped heating member. The second heating plate is connected to the second arc-shaped heating member and surrounds it to form a semi-circular second heating body 700 that penetrates along the axial direction. A second heating chamber is formed between the second heating plate and the second arc-shaped heating member. The temperature marking member 420 is provided in the first heating chamber. The infrared thermometer 500 can detect the infrared radiation energy generated by the temperature marking member 420 in the first heating chamber, thereby detecting the temperature of the temperature marking member 420. This not only realizes the detection of the temperature of the tray 200 but also can detect the ambient temperature in the first heating chamber of the first heating body.

[0062] In the embodiment of the present application, the process chamber is provided with the first heating plate 300 and the second heating plate facing each other. The tray 200 is located in the process space S between the first heating plate 300 and the second heating plate. An induction coil may be provided around the first heating body and the second heating body 700, and the induction coil is configured to inductively heat the first heating body and the second heating body 700. Thereby, the temperature uniformity of the environment where the tray 200 is located can be improved, which is advantageous for improving the epitaxial growth quality of the wafer W.

[0063] The embodiment of the present application further provides a semiconductor process device, which includes the process chamber mentioned in any of the above-mentioned solution means. In this way, the semiconductor process device has the beneficial effects of any of the above-mentioned solution means, and the description is omitted here. Optionally, the semiconductor process device of the embodiment of the present application is an epitaxial growth device. Of course, it may also be a semiconductor heat treatment device that needs to detect the temperature and rotation speed of the tray.

[0064] The embodiments of the present application further provide a detection method for the tray 200, which is applied to the process chamber mentioned in any of the above-mentioned solution means and is used to detect the temperature and rotation speed of the tray 200. The detection method includes: a step S100 of starting the infrared thermometer 500 and periodically receiving, as the temperature of the tray 200, the temperature of the temperature mark member 420 detected by the infrared thermometer 500 when the temperature mark member 420 rotates to a predetermined temperature detection position; a step S200 of comparing the temperatures of all the temperature mark members 420 obtained within the detection time and determining the stability of the temperature of the tray 200 based on the comparison result; and a step S300 of calculating the rotation speed of the tray 200 based on the number of acquisitions of the temperature of the tray 200 per unit time.

[0065] In the embodiments of the present application, since the temperature mark member 420 is provided at the second end of the rotating shaft 410, in the process of the rotating shaft 410 rotating together with the tray 200, the temperature mark member 420 realizes circumferential rotation along with the rotation of the rotating shaft 410 and the tray 200. At the predetermined temperature detection position, the infrared thermometer 500 can periodically detect the temperature of the temperature mark member 420, thereby periodically acquiring the temperature of the tray 200, and further determining the stability of the temperature of the tray 200 from the temperatures of all the temperature mark members 420 obtained within the detection time, thereby accurately detecting the temperature of the tray 200.

[0066] At the same time, when detecting the rotation speed of the tray 200, the rotation speed of the tray 200 can be calculated based on the number of acquisitions of the temperature of the tray 200 per unit time.

[0067] Specifically, when the tray 200 is rotating, the temperature mark member 420 passes through a predetermined temperature detection position during rotation, and each time it passes, the acquisition count can be recorded once. Note that the acquisition count of the infrared thermometer 500 with respect to the temperature of the temperature mark member 420 can be represented by the detected temperature data. Specifically, as shown in FIG. 6, in the relationship diagram of the temperature and time detected by the infrared thermometer 500, the sudden change in the temperature detected by the infrared thermometer 500 may be a sudden change from the peak temperature to the bottom temperature, or a sudden change from the bottom temperature to the peak temperature. Here, the number of times of recording the peak temperature within the detection time is the above-mentioned acquisition count.

[0068] By multiplying the ratio of the acquisition count to the number of mark structures (for example, blades) included in the temperature mark member 420 by 2π, the rotation angle of the tray 200 per unit time can be obtained, and thereby the rotation speed of the tray 200 can be obtained. The above calculation can refer to the formula ω = 2nπ / mT, where ω is the angular velocity of the tray 200, n is the acquisition count, and m is the number of mark structures (for example, blades) included in the temperature mark member 420.

[0069] Compared with the related art, the infrared thermometer 500 of the embodiment of the present application is not only used to detect the temperature of the tray 200, but can also be used as a detection device for the rotation speed of the tray 200. In this way, there is no need to separately add a speed measurement device, thereby effectively simplifying the structural layout of the device.

[0070] What has been mainly described in the above embodiments of the present application is the differences between the embodiments. As long as the different optimization features between the embodiments do not conflict, they can all be combined to form more preferred embodiments. Considering the simplicity of the text flow, the description is omitted here.

[0071] The above are only embodiments of the present application and do not limit the present application. A person skilled in the art can make various changes and modifications to the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application should all be included within the scope of the claims of the present application.

Description of Reference Numerals

[0072] 100 Process chamber body 200 Tray 210 Driving part 220 Annular engagement part 300 First heating plate 310 Feed-in sub-channel 320 Distribution sub-channel 330 First transport sub-channel 340 Second transport sub-channel 350 Exhaust channel 360 Through-hole 361 First annular stepped groove 362 Second annular stepped groove 370 Receiving groove 301 Intake port 302 Exhaust port 303 Through port 304 Sealing material 305 First exhaust sub-channel 306 Second exhaust sub-channel 307 Third exhaust sub-channel 400 Rotating shaft assembly 410 Rotating shaft 420 Temperature marking member 421 Blade 422 Impeller 401 Fastener 500 Infrared thermometer 600 Sleeve 700 Second heating element S Process space

Claims

1. A process chamber of a semiconductor process apparatus, comprising: a process chamber body, a tray provided in the process chamber body, a first heater, a rotating shaft assembly, and an infrared thermometer provided outside the process chamber body; the first heater includes a first heating plate; the tray is rotatably provided on the upper surface of the first heating plate; the rotating shaft assembly includes a rotating shaft and a temperature marking member, the rotating shaft is inserted into the first heating plate and rotatably engaged with the first heating plate, and the first end of the rotating shaft is connected to the tray so that the rotating shaft can rotate together with the tray, and the second end of the rotating shaft extends and protrudes from the bottom surface of the first heating plate; the temperature marking member is provided at the second end of the rotating shaft and can rotate together with the rotating shaft, and the infrared thermometer is used to detect the temperature of the temperature marking member rotated to a predetermined temperature detection position, thereby periodically obtaining the temperature of the temperature marking member. A process chamber of a semiconductor process apparatus characterized by this.

2. The process chamber according to claim 1, wherein the temperature marking member includes a plurality of blades, and the plurality of blades are evenly arranged along the circumferential direction of the rotating shaft.

3. A gas flow path is provided in the first heating plate, the gas flow path includes an exhaust flow path, the exhaust flow path is used to transport driving gas, an exhaust port is opened on the upper surface of the first heating plate, the exhaust port communicates with the exhaust flow path and is provided corresponding to the tray, the tray includes a driving part provided on the bottom surface of the tray, and the driving gas sent out through the exhaust port can rotate the tray by pushing the driving part. A process chamber according to claim 1, characterized by this.

4. The process chamber according to claim 3, wherein at least three of the exhaust ports are opened on the upper surface of the first heating plate, and the at least three exhaust ports are evenly distributed along the circumferential direction of the central axis of the tray.

5. The gas flow path further includes an intake air flow path. One end of the intake air flow path is used to communicate with an external gas source, and the other end of the intake air flow path communicates with the exhaust flow path to transport the driving gas into the exhaust flow path. The intake air flow path is arranged in a horizontal plane, and the exhaust flow path is provided inclined with respect to the vertical direction. The process chamber according to claim 3 or 4, characterized in that.

6. The intake air flow path includes a feeding sub-flow path, a distribution sub-flow path, and a plurality of transport sub-flow paths. The first end of the feeding sub-flow path is used to communicate with the external gas source, the second end of the feeding sub-flow path communicates with the intake end of the distribution sub-flow path, the distribution sub-flow path has a plurality of exhaust ends, and the intake ends of the plurality of transport sub-flow paths communicate with the plurality of intake ends of the distribution sub-flow path in a one-to-one correspondence. At least three of the exhaust ports are opened on the upper surface of the first heating plate. The exhaust flow path includes at least three exhaust sub-flow paths. Each exhaust sub-flow path communicates with each exhaust port in a one-to-one correspondence. The exhaust end of each transport sub-flow path communicates with one of the exhaust sub-flow paths. The process chamber according to claim 5, characterized in that.

7. The feeding sub-flow path extends along a first horizontal direction. The extending direction of the distribution sub-flow path is perpendicular to the first horizontal direction. The second end of the feeding sub-flow path communicates with the intake end of the distribution sub-flow path. There are two transport sub-flow paths, namely a first transport sub-flow path and a second transport sub-flow path respectively. The first transport sub-flow path and the second transport sub-flow path communicate with two exhaust ends of the distribution sub-flow path respectively. The first transport sub-flow path and the second transport sub-flow path are symmetrically arranged with respect to the feeding sub-flow path. One ends of the distribution sub-flow path, the first transport sub-flow path, and the second transport sub-flow path are all provided with through holes on the outer surface of the first heating plate, and a sealing material is provided in the through holes. There are three exhaust ports, which are evenly distributed along the circumferential direction of the central axis of the tray. There are three exhaust sub-channels, namely the first exhaust sub-channel, the second exhaust sub-channel, and the third exhaust sub-channel. The first exhaust sub-channel communicates with the feeding sub-channel, the second exhaust sub-channel communicates with the first transportation sub-channel, and the third exhaust sub-channel communicates with the second transportation sub-channel. The first exhaust sub-channel, the second exhaust sub-channel, and the third exhaust sub-channel respectively communicate with the three exhaust ports in a one-to-one correspondence. The process chamber according to claim 6, characterized in that.

8. The process chamber further includes a sleeve. The first heating plate has a through hole penetrating its upper and lower surfaces. A first annular stepped groove is provided in the through hole. The sleeve is fitted outside the rotating shaft and is located in the first annular stepped groove. The process chamber according to claim 1, characterized in that.

9. A second annular stepped groove is further provided in the through hole. The first annular stepped groove and the second annular stepped groove are arranged in sequence from bottom to top along the through hole. The tray includes an annular engaging portion provided on the bottom surface of the tray. The annular engaging portion is fitted outside the sleeve and is provided in the second annular stepped groove. The process chamber according to claim 8, characterized in that.

10. The process chamber further includes a second heating body, a first end cap, and a second end cap. The first heating body further includes a first arc-shaped heating member connected to the first heating plate. A first heating chamber is formed between the first heating plate and the first arc-shaped heating member. The second heating body includes a second heating plate and a second arc-shaped heating member. A second heating chamber is formed between the second heating plate and the second arc-shaped heating member. The first heating body and the second heating body are provided opposite to each other. The first end cap is externally fitted to the first end of the first heating body and the first end of the second heating body. The second end cap is externally fitted to the second end of the first heating body and the second end of the second heating body. The first heating plate and the second heating plate are provided opposite to each other, and a process space is formed between them. The process chamber according to claim 1, characterized in that.

11. A semiconductor process apparatus, characterized in that it includes the process chamber according to any one of claims 1 to 10.

12. A method for detecting a tray applied to the process chamber according to any one of claims 1 to 10, comprising: starting the infrared thermometer, and periodically receiving, as the temperature of the tray, the temperature of the temperature marking member detected by the infrared thermometer when the temperature marking member rotates to the predetermined temperature detection position; comparing the temperatures of all the temperature marking members acquired within the detection time, and determining the stability of the temperature of the tray based on the comparison result; calculating the rotation speed of the tray based on the number of acquisitions of the temperature of the tray per unit time. A method for detecting a tray, characterized by comprising the above steps.

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