Flip chip connection structure between microneedle and flat cable and manufacturing method thereof

Abstract

This application discloses a flip chip connection structure between a microneedle and a flat cable and a manufacturing method thereof. This method involves forming a flip chip metal layer (5a) of the microneedle (1), forming a flip chip metal layer (5b) of the flat cable, aligning the flip chip metal layer (5a) of the microneedle with the flip chip metal layer (5b) of the flat cable, and pressing to form a flip chip contact, thereby realizing a flip chip connection structure between the microneedle and the flat cable. Compared with the manufacturing of a microneedle array by the conventional TSV method, the process steps can be significantly simplified and accurate transmission of signals can be realized. The resistance value of the ohmic contact resistance generated by the electrical contact of the contacts is significantly reduced, and the stability and accuracy of signal transmission are significantly improved.

Description

[Technical field]

[0001] The present application relates to the technical field of microneedles, and more particularly to a flip-chip connection structure between a microneedle and a flat cable and a manufacturing method thereof. [Background technology]

[0002] As we all know, humans think much faster than they communicate through letters or words. For example, when we use a keyboard to type, many of us are aware that our typing is much slower than our thinking. For people with physical disorders such as severe paralysis or limb impairments, this bottleneck in information transmission is even more extreme.

[0003] Therefore, humans have been searching for ways to connect human nerves to external devices and effectively increase the transmission speed of information. To this end, neural interfaces were born. Neural interfaces, commonly called neural implants or neural "strings," can establish a connection between nerve cells and external devices. For example: Willett et al. published a paper in Nature reporting the development of a brain-machine interface (BCI) for typing that will eventually enable paralyzed people to communicate at their own speed of thought (Willett, FR, Avansino, DT, Hochberg, LR, Henderson, JM & Shenoy, KV Nature 593, 249-254 (2021)). Neural interfaces are also widely used in the research and treatment of various neurological disorders.

[0004] Microneedles are important components in neural interfaces, and it is known that conventional microneedles can be integrated using the TSV method. For example, Patent Document 1 (CN114343655A) discloses a microneedle that can form a planar array with multiple contacts, and also discloses a manufacturing method for the above-mentioned microneedle. The manufacturing process requires using the TSV method to form through-holes at both ends of the tail of the microneedle body, and then using a wire bonding method to extract the microneedle signal.

[0005] However, manufacturing microneedles using conventional TSV methods has technical problems such as a complicated manufacturing process and high costs, and it is necessary to improve the stability of the connection between the microneedle and the flat cable and the accuracy of signal transmission. Summary of the Invention [Problem to be solved by the invention]

[0006] In view of this, the present application provides a flip-chip connection structure between a microneedle and a flat cable, and a manufacturing method thereof, which uses a flip-chip connection to join the microneedle and the flat cable, and can obviously simplify the process steps and realize accurate signal transmission compared to the manufacturing of a microneedle array by the conventional TSV method. [Means for solving the problem]

[0007] In order to achieve the above object, according to one aspect of the present application, the present application provides the following technical solution.

[0008] The manufacturing method of the flip chip connection structure between the microneedle and the flat cable includes the following steps.

[0009] In step S1, a flip-chip metal layer of a microneedle is formed, a microneedle insulating layer is formed on the microneedle, an etching hole is formed in the microneedle insulating layer at a position corresponding to the upper side of the signal output of the microneedle, and metal is electroplated in the etching hole, and the microneedle insulating layer is removed to expose the flip-chip metal layer of the microneedle.

[0010] In S2, a flip-chip metal layer of a flat cable is formed, which comprises forming a flat-cable wiring layer on a silicon wafer, forming a flat-cable insulating layer on the flat-cable wiring layer, etching the flat-cable insulating layer at a position corresponding to above a signal input to form an etching hole, electroplating metal into the etching hole, and etching silicon in a corresponding flip-chip area on the back side of the silicon wafer to remove the flat-cable insulating layer and expose the flip-chip metal layer of the flat cable.

[0011] In step S3, the flip-chip metal layer of the microneedle and the flip-chip metal layer of the flat cable are aligned and pressed together to form a flip-chip connection structure.

[0012] As a preferred embodiment of the method for manufacturing the flip-chip connection structure between the microneedle and the flat cable described in this application, said method is a MEMS method.

[0013] In a preferred embodiment of the method for manufacturing the flip chip connection structure between the microneedle and the flat cable described in the present application, in step S1, the microneedle is a single needle or a multi-needle.

[0014] In a preferred embodiment of the method for manufacturing the flip chip connection structure between the microneedle and the flat cable described in the present application, in step S1, the multi-needle is 8 needles or 32 needles.

[0015] In a preferred embodiment of the method for manufacturing the flip-chip connection structure between the microneedle and the flat cable described in the present application, in step S1, the microneedle is an array microneedle.

[0016] In a preferred embodiment of the method for manufacturing the flip chip connection structure between microneedles and flat cables described in the present application, in step S1, the array of microneedles is 8×8 needles or 32×32 needles.

[0017] In a preferred embodiment of the method for manufacturing the flip-chip connection structure between the microneedle and the flat cable described in the present application, the material of the insulating layer in step S1 or step S2 is polyimide.

[0018] In a preferred embodiment of the method for manufacturing the flip-chip connection structure between the microneedle and the flat cable described in the present application, the metal in step S1 or step S2 includes indium, copper, nickel or gold.

[0019] In a preferred embodiment of the manufacturing method for the flip-chip connection structure between the microneedle and the flat cable described in the present application, in step S2, the flat cable is a single flat cable or a multi-flat cable, and each flat cable is provided with a flip-chip metal layer.

[0020] In a preferred embodiment of the method for manufacturing the flip-chip connection structure between the microneedle and the flat cable described in the present application, the pressing in step S3 is room temperature pressing.

[0021] In a preferred embodiment of the method for manufacturing the flip-chip connection structure between the microneedles and the flat cable described in the present application, in step S3, the microneedles and the flat cable are connected in a modularized form.

[0022] As a preferred embodiment of the method for manufacturing the flip chip connection structure between the microneedle and the flat cable described in the present application, in step S3, the flip chip connection structure realizes the flip chip connection by metal flip chip bonding in the vertical direction or by flip chip bonding by connecting the metal side walls.

[0023] According to one aspect of the present application, the present application further provides a flip-chip connection structure between a microneedle and a flat cable manufactured using the above-mentioned manufacturing method.

[0024] The beneficial effects of the present application are as follows:

[0025] The present application provides a flip chip connection structure between microneedles and flat cables and a manufacturing method thereof, which includes forming a flip chip metal layer on the microneedles, forming a flip chip metal layer on the flat cable, aligning the flip chip metal layer on the microneedles with the flip chip metal layer on the flat cable, and pressing to form a flip chip contact, thereby realizing the flip chip connection between the microneedles and the flat cable. Compared with the manufacturing of microneedle arrays by the conventional TSV method, the process steps can be significantly simplified and accurate signal transmission can be realized. The stability of the bond between the flip chip connected microneedles and the flat cable by the method of the present application is higher than that of the connected microneedles and the flat cable made by the conventional TSV method, the service life is longer, and the failure rate is significantly reduced. The resistance value of the ohmic contact resistance generated by the electrical contact of the contacts is obviously reduced, and the stability and accuracy of signal transmission are obviously improved.

[0026] In order to more clearly describe the technical solutions of the embodiments of the present application and the prior art, the following will briefly describe the accompanying drawings required for the description of the embodiments or the prior art. It is obvious that the accompanying drawings in the following description are only some of the embodiments of the present application, and those skilled in the art can obtain other accompanying drawings based on the structures shown in these accompanying drawings without creative work. [Brief description of the drawings]

[0027] [Figure 1] FIG. 1 is a schematic diagram of the microneedle flip chip contact metal process flow of the present application. [Diagram 2] FIG. 1 is a schematic plan view of a microneedle flip chip contact array according to the present application. [Diagram 3] FIG. 2 is a schematic diagram of the process flow for the flat cable flip chip contact metallurgy of the present application. [Figure 4] FIG. 2 is a schematic plan view of the flat cable flip chip contact array of the present application. [Diagram 5] FIG. 1 is a schematic diagram of flip-chip connection between the microneedle array and flat cable array of the present application on the upper and lower metal surfaces. [Figure 6] FIG. 1 is a schematic diagram of flip-chip bonding of the microneedle array and flat cable array of the present application by connecting metal side walls. [Figure 7] FIG. 1 is a schematic diagram of a single-needle bond according to the present application. [Figure 8] FIG. 1 is a schematic diagram of the eight-needle junction of the present application. [Figure 9] FIG. 2 is an enlarged schematic view of the flat cable of the present application. [Figure 10] FIG. 1 is a schematic diagram of the 8×8 needle junction of the present application. [Figure 11] FIG. 1 is a schematic diagram of the 32-needle junction of the present application. [Figure 12] FIG. 1 is a schematic diagram of the 32×32 needle junction of the present application. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] The realization of the objectives, functional features and advantages of the present application will be further described with reference to the accompanying drawings in combination with the embodiments.

[0029] The following will be described clearly and completely in relation to the technical solutions in the embodiments. It is clear that the described embodiments are only some of the embodiments, not all of the embodiments of the present application. Based on the embodiments of the present application, all other embodiments that a person skilled in the art can obtain without performing creative work fall within the scope of protection of the present application.

[0030] In addition, when the embodiments of the present application include directional indications (e.g., up, down, left, right, front, back, etc.), the directional indications are used only to explain the relative positional relationships, movement conditions, etc. between each part in a certain specific posture (see figure), and when the specific posture changes, the directional indications also change accordingly.

[0031] In addition, when the embodiments of the present application refer to "first", "second", etc., the descriptions of "first", "second", etc. are used for explanatory purposes only and should not be understood as indicating or implying the relative importance thereof or implicitly specifying the number of technical features presented. Therefore, a feature defined as "first" or "second" may include at least one of the features, either explicitly or implicitly. In addition, the technical solutions of each embodiment may be combined with each other as long as it can be realized by a person skilled in the art. If a combination of technical solutions causes a contradiction or cannot be realized, it should be understood that such a combination of technical solutions does not exist and is not within the scope of the application's protection.

[0032] The present application provides a flip chip connection structure between a microneedle and a flat cable, and a manufacturing method thereof, which has the following advantages:

[0033] 1. The present application uses a MEMS method to fabricate microneedles and flat cables, and in particular when the microneedles are array microneedles, hundreds to thousands of signal lines of the readout circuit can be drawn out by metal flip-chip bonding, solving the problem of drawing out multiple signals. In addition, the connection method used in the present application effectively reduces the steps of the method compared with the process of the conventional method, improves production efficiency, and reduces production costs.

[0034] 2. The present application forms a flip-chip metal layer, particularly a metal indium layer, on the microneedle and the flat cable, respectively, and connects the two modules, the microneedle and the flat cable, by pressing at room temperature, thereby reducing the ohmic contact resistance of the electrical contact, improving the stability of the joint, and improving the accuracy of the signal output.

[0035] 3. In the present application, when realizing the connection between the flat cable and the microneedles, especially when the microneedles are array microneedles, the flat cable can be inserted into the microneedle array by rotation, the metal on the flat cable and the metal on the microneedle array can be aligned, and the flip chip contact can be formed by room temperature pressing. Through the above operation, the fixed length of the flip chip contact metal part of the microneedle array intersects with the flip chip joint part of the flat cable, so that the alignment accuracy of the flip chip joint can be greatly improved, and the difficulty of alignment during flip chip bonding of two modules can be solved.

[0036] 4. The flat cable and the microneedle of the present application can be connected not only by vertical metal flip chip bonding, but also by connecting the metal side walls. Since the contact area is affected by the metal wiring during the process of vertical metal flip chip bonding, the flip chip bonding area can be increased by using the flip chip bonding by connecting the metal side walls, while the stability of the flip chip bonding can be further improved.

[0037] Hereinafter, the flip chip connection structure between the microneedle and the flat cable of the present application and the manufacturing method thereof will be described with reference to specific examples.

[0038] The present inventors have found that the manufacturing of microneedles by the conventional TSV method requires a complicated manufacturing process, high cost, and poor connection stability and signal transmission accuracy between the microneedles and the flat cable. Therefore, in the embodiment of the present application provided by the present inventors, a flip chip metal layer of the microneedle is formed, a flip chip metal layer of the flat cable is formed, and the flip chip metal layer of the microneedle and the flip chip metal layer of the flat cable are aligned and pressed to form a flip chip contact, thereby realizing the flip chip connection between the microneedle and the flat cable. Compared with the manufacturing of microneedle arrays by the conventional TSV method, the process steps can be obviously simplified and accurate signal transmission can be realized. The stability of the connection between the flip chip connected microneedle and the flat cable by the method of the present application is higher than that of the connected microneedle and the flat cable made by the conventional TSV method, the service life is longer, and the failure rate is significantly reduced. The resistance value of the ohmic contact resistance generated by the electrical contact of the contacts is obviously reduced, and the stability and accuracy of the signal transmission are obviously improved.

[0039] Referring to FIGS. 1-5, in one embodiment of the present application, achieving flip-chip connection between the microneedle and the flat cable includes the following steps.

[0040] In step S1, a microneedle 1 to be bonded is prepared, a microneedle insulating layer 2 is formed on the microneedle 1, the material of the microneedle insulating layer 2 is preferably polyimide, the microneedle insulating layer is etched at a designated position to form an etching hole 3, a metal 4 is electroplated in the etching hole 3, the electroplating metal 4 includes indium, copper, nickel or gold, the electroplating metal 4 is preferably indium, the microneedle insulating layer 2 is removed, and a flip chip contact metal 5a of the microneedle 1 is exposed. Here, the designated position is a position of the microneedle insulating layer 2 corresponding to the upper side of the signal output of the microneedle.

[0041] In step S2, a silicon wafer 6 is prepared, a flat cable wiring layer 7 is formed on the silicon wafer 6, a flat cable insulating layer 8 is formed on the flat cable wiring layer 7, the material of the flat cable insulating layer 8 is preferably polyimide, the flat cable insulating layer is etched at a designated position to form an etching hole 3, and a metal 4 is electroplated in the etching hole 3, the electroplating metal 4 is preferably indium, and silicon in a corresponding flip chip area on the back side of the silicon wafer 6 is etched, the flat cable insulating layer 8 is removed, and the flip chip contact metal of the flat cable is exposed. Here, the designated position is a position of the flat cable insulating layer 8 corresponding to above the signal input.

[0042] Finally, in step S3, the flip chip contact metal 5a of the microneedle and the flip chip contact metal 5b of the flat cable are vertically aligned, and a flip chip contact is formed by cold pressing.

[0043] As shown in FIGS. 1-4 and 6, in yet another embodiment of the present application, achieving flip-chip connection between the microneedle and the flat cable includes the following steps.

[0044] In step S1, a microneedle 1 to be joined is prepared, a microneedle insulating layer 2 is formed on the microneedle 1, the material of the microneedle insulating layer 2 is preferably polyimide, the microneedle insulating layer 2 is etched at a position of the microneedle insulating layer 2 corresponding to above the signal output of the microneedle to form an etching hole 3, and a metal 4 is electroplated into the etching hole 3, the electroplated metal 4 is preferably indium, and the microneedle insulating layer 2 is removed to expose the flip chip contact metal 5a of the microneedle 1.

[0045] In step S2, a silicon wafer 6 is prepared, a flat cable wiring layer 7 is formed on the silicon wafer 6, a flat cable insulating layer 8 is formed on the flat cable wiring layer 7, the material of the flat cable insulating layer 8 is preferably polyimide, the flat cable insulating layer 8 is etched at a position of the flat cable insulating layer 8 corresponding to an upper portion of a signal input to form an etching hole 3, and a metal 4 is electroplated in the etching hole 3, the electroplating metal 4 is preferably indium, and the silicon of the corresponding flip chip area on the back side of the silicon wafer 6 is etched, the flat cable insulating layer 8 is removed, and the flip chip contact metal of the flat cable is exposed.

[0046] Finally, in step S3, the sidewalls of the flip chip contact metal 5a of the microneedle and the flip chip contact metal 5b of the flat cable are interconnected to form a flip chip contact by cold pressing.

[0047] Flip-chip bonding by connecting the metal side walls in this way can increase the area of ​​the flip-chip bond, and further improve the stability of the bond between the microneedle and the flat cable.

[0048] As shown in Fig. 7, in another embodiment of the present application, the microneedle is a single needle or a multi-needle, and the body of each needle is provided with a flip chip metal layer. For example, the flip chip connection between the single-needle microneedle and the flat cable is realized by forming the microneedle flip chip contact 14 of the single-needle microneedle 13, forming the flip chip metal layer of the flat cable, aligning the microneedle flip chip contact 14 of the single-needle microneedle 13 with the flip chip metal layer of the flat cable, or interconnecting the sidewalls of the microneedle flip chip contact 14 of the single-needle microneedle 13 and the flip chip metal layer of the flat cable, and pressing to form a flip chip contact. Specific implementation procedures can be referred to the above-mentioned embodiments.

[0049] As shown in Fig. 8, in another embodiment of the present application, the flip chip connection between the eight microneedles 16 and the flat cable 11 is realized by forming the microneedle flip chip contacts 17 of the eight microneedles 16, forming the flip chip metal layer of the flat cable, aligning the microneedle flip chip contacts 17 of the eight microneedles 16 with the flip chip metal layer of the flat cable, or interconnecting the side walls of the microneedle flip chip contacts 17 of the eight microneedles 16 with the flip chip metal layer of the flat cable, and pressing to form the flip chip contacts. The specific implementation procedures can be referred to the above-mentioned embodiments.

[0050] 9 shows an enlarged schematic diagram of a flat cable array corresponding to the 8×8 needle flat cable 19 and the 32×32 needle flat cable 21. In addition, when the microneedles used are array microneedles and the flat cable is an array flat cable, for example, when flip-chip connecting the 8×8 needle flat cable 23 and the 8×8 needle flat cable 22 shown in FIG. 10, or when flip-chip connecting the 32×32 needle array microneedle 30 and the 32×32 needle flat cable 29 shown in FIG. 12, the array flat cable adopted in the present application can be inserted into the microneedle array by rotation, and then performing flip-chip connection between the array flat cable and the microneedle array, thereby realizing modular high-speed bonding between the microneedle array and the array flat cable array. Compared with the method of extracting the microneedle signal by the wire bonding method after the microneedle array manufactured by the conventional TVS method, the efficiency of the entire process flow is significantly improved.

[0051] 10, in another embodiment of the present application, the 8×8 needle array microneedle flip chip contact 24 is formed on the 8×8 needle array microneedle 23, the flip chip metal layer of the 8×8 needle flat cable 22 is formed, and the 8×8 array microneedle flip chip contact 24 of the 8×8 needle array microneedle 23 and the flip chip metal layer of the 8×8 needle flat cable 22 are aligned, or the side walls of the 8×8 array microneedle flip chip contact 24 of the 8×8 needle array microneedle 23 and the flip chip metal layer of the 8×8 needle flat cable 22 are interconnected, and pressed to form a flip chip contact, thereby realizing the flip chip connection 25 between the 8×8 needle array microneedle and the 8×8 needle flat cable. Specific implementation procedures can be referred to the above-mentioned embodiments.

[0052] 11, in another embodiment of the present application, the microneedle flip chip contacts 27 of the 32 microneedles 26 are formed, a flip chip metal layer of the flat cable is formed, and the microneedle flip chip contacts 27 of the 32 microneedles 26 and the flip chip metal layer of the flat cable are aligned, or the side walls of the microneedle flip chip contacts 27 of the 32 microneedles 26 and the flip chip metal layer of the flat cable are interconnected, and pressed to form a flip chip contact, thereby realizing the flip chip connection between the 32 microneedles 26 and the flat cable 11. The specific implementation procedures can be referred to the above-mentioned embodiments.

[0053] 12, in another embodiment of the present application, the 32×32 array microneedle flip chip contact 31 of the 32×32 needle array microneedle 30 is formed, the flip chip metal layer of the 32×32 needle flat cable 29 is formed, and the 32×32 array microneedle flip chip contact 31 of the 32×32 needle array microneedle 30 and the flip chip metal layer of the 32×32 needle flat cable are aligned, or the side walls of the 32×32 array microneedle flip chip contact 31 of the 32×32 needle array microneedle 30 and the flip chip metal layer of the 32×32 needle flat cable are interconnected, and pressed to form a flip chip contact, thereby realizing the flip chip connection between the 32×32 needle array microneedle 30 and the 32×32 needle flat cable 29. Specific implementation procedures can be referred to the above-mentioned embodiments.

[0054] In yet another embodiment of the present application, there is provided a microneedle and a flat cable connected by flip chip, which is manufactured by using any one of the above embodiments. The stability of the connection between the microneedle and the flat cable is higher than that of the connected microneedle and the flat cable manufactured by the conventional TSV method, so that the service life is longer and the failure rate is significantly reduced. Furthermore, by electroplating the indium metal contact, the resistance value of the ohmic contact resistance generated by the electrical contact of the contact is obviously reduced, and the stability and accuracy of signal transmission are obviously improved.

[0055] The above is merely a preferred embodiment of the present application, and does not limit the scope of the claims of the present application. Any equivalent structural transformation made by utilizing the contents of the present application under the concept of the present invention, or direct / indirect application to other related technical fields, is also included in the scope of protection of the present application. [Explanation of symbols]

[0056] 1. Microneedle 2. Microneedle insulation layer 3 Etching holes 4 metal 5a microneedle flip chip contact metal 5b flat cable flip chip contact metal 6 Silicon Wafer 7 Flat Cable Wiring Layer 8 Flat cable insulation layer 9 Flat cable wiring area 10 Flat cable lead wire 11 Flat cable 12 Flat cable contact hole 13 Single Needle Microneedle 14 Microneedle Flip Chip Contacts 15 Flip-chip connection between microneedle and flat cable 16 8 microneedles 17 8 microneedle flip chip contacts 18 Flip chip connection of 8 microneedles with flat cable 19 8x8 needle flat cable 20 Flat Cable Contact Array 21 32x32 needle flat cable 22 8x8 needle flat cable 23 8x8 array microneedle 24 8x8 Array Microneedle Flip Chip Contacts 25 Flip-chip connection of 8 × 8 array microneedles to 8 × 8 needle flat cable 26 32 microneedles 27 32 microneedle flip chip contacts 28 32 microneedles with flip chip connection to flat cable 29 32x32 needle flat cable 30 32x32 array microneedle 31 32x32 Array Microneedle Flip Chip Contacts 32 Flip-chip connection of 32 × 32 array microneedles to 32 × 32 needle flat cable

Claims

1. A method for manufacturing a flip chip connection structure between a microneedle and a flat cable, comprising the steps of: Step S1 of forming a flip-chip metal layer of the microneedle; Step S2 of forming a flip chip metal layer of the flat cable; Step S3: aligning and pressing the flip-chip metal layer of the microneedle with the flip-chip metal layer of the flat cable to form a flip-chip connection structure; A method for manufacturing a flip chip connection structure between a microneedle and a flat cable, comprising:

2. The step of forming a flip-chip metal layer of the microneedles includes: forming a microneedle insulating layer on the microneedles; Etching the microneedle insulating layer at designated locations to form etching holes, and electroplating metal into the etching holes; removing the microneedle insulating layer to expose the flip-chip metal layer of the microneedle; 2. The method for producing the flip chip connection structure between the microneedle and the flat cable according to claim 1, further comprising:

3. The step of forming a flip chip metal layer of a flat cable includes: forming a flat cable wiring layer on a silicon wafer, and forming a flat cable insulating layer on the flat cable wiring layer; Etching the flat cable insulating layer at designated locations to form etching holes, electroplating metal into the etching holes, and etching silicon in corresponding flip chip areas on the back side of the silicon wafer to remove the flat cable insulating layer and expose the flip chip metal layer of the flat cable; 2. The method for producing the flip chip connection structure between the microneedle and the flat cable according to claim 1, further comprising:

4. The material of the insulating layer is polyimide.

4. A method for producing a flip-chip connection structure between a microneedle and a flat cable according to claim 2 or 3.

5. The metal includes indium, copper, nickel, or gold.

4. A method for producing a flip-chip connection structure between a microneedle and a flat cable according to claim 2 or 3.

6. The flip chip connection structure achieves flip chip connection by metal flip chip bonding in the up-down direction.

2. A method for producing a flip-chip connection structure between a microneedle and a flat cable according to claim 1.

7. The flip chip connection structure achieves flip chip connection by flip chip bonding through connection of metal side walls.

2. A method for producing a flip-chip connection structure between a microneedle and a flat cable according to claim 1.

8. The flat cable is a single flat cable or a multi-flat cable, and each flat cable is provided with a flip chip metal layer.

2. A method for producing a flip-chip connection structure between a microneedle and a flat cable according to claim 1.

9. The microneedles are single or multi-needle, and the body of each needle is provided with a flip-chip metal layer.

2. A method for producing a flip-chip connection structure between a microneedle and a flat cable according to claim 1.

10. Produced by the method according to any one of claims 1 to 9. Flip chip connection structure between microneedle and flat cable.

Images