Plasma device and method for processing a feed material using an upstream swirl module and a composite gas flow

Abstract

This specification discloses systems, methods, and devices for processing feedstock using an upstream swirl module and a composite gas flow. Some embodiments are microwave plasma devices for processing materials, comprising a first flow module, a second flow module, and a liner; and a first swirl module in communication with the second flow module, the first swirl module comprising one or more first gas inlets configured to generate a first swirling gas flow toward a second swirl module. The second swirl module comprises one or more second gas inlets configured to generate a second swirling gas flow toward the liner, and the first swirl module and the second swirl module are configured such that the first swirling gas flow and the second swirling gas flow merge into a composite gas flow before entering the liner.

Description

Technical Field

[0001] Incorporation by reference of priority applications This application claims the benefit of priority under 35 U.S.C. § 119(e) to U.S. Provisional Patent Application No. 63 / 350,746, filed Jun. 9, 2022, the entire disclosure of which is hereby incorporated by reference in its entirety.

[0002] The present invention relates to apparatuses and methods for plasma material processing, and more particularly, to apparatuses and methods for microwave plasma material processing.

Background Art

[0003] Plasma torches produce and provide a high-temperature directed flow of plasma for various purposes. The two main types of plasma torches are induction plasma torches and microwave plasma torches. Generally, induction plasmas suffer from plasma non-uniformities. This non-uniformity limits the ability of the induction plasma to process certain materials. Additionally, there are significant differences between microwave plasma devices and other plasma generating torches such as induction plasmas. For example, microwave plasmas are hotter inside the plasma plume, while induction is hotter outside the plume. In particular, the outer region of an induction plasma can reach about 10,000 K, while the inner processing region can only reach about 1,000 K. This large temperature difference leads to problems in material processing and feeding. Furthermore, induction plasma devices cannot process raw materials at a temperature low enough to avoid melting of certain feed materials without extinguishing the plasma.

[0004] Conventional microwave plasma devices for processing materials include a plasma chamber, a microwave radiation source, and a waveguide that guides microwave radiation from the microwave radiation source to the plasma chamber. A process gas flows through the plasma chamber, and the microwave radiation couples to the process gas to generate a plasma jet. The process material is introduced into the plasma chamber and becomes entrained in the plasma jet, thereby being converted into a stream of droplets or particles of the produced material.

[0005] The plasma jet may be stabilized within the plasma chamber by contact with a swirling gas flow. By stabilizing the plasma jet, contact of the plasma jet with the plasma chamber is prevented, thereby enabling the use of conventional heat-resistant materials to contain the extremely high temperatures of the plasma. SUMMARY OF THE INVENTION

[0006] For the purposes of this summary, certain aspects, advantages, and novel features of the invention are described herein. It is to be understood that not all such advantages can necessarily be achieved in accordance with any particular embodiment of the invention. Thus, for example, those skilled in the art will recognize that the invention may be embodied or carried out without necessarily achieving one advantage or group of advantages taught or suggested herein, without achieving all such advantages as may be taught or suggested herein.

[0007] Some embodiments herein are microwave plasma devices for processing materials, comprising a first flow module, a second flow module, and a liner, and a first swirling module in communication with the second flow module, the first swirling module comprising a plurality of first gas inlets configured to generate a first swirling gas flow directed toward a second swirling module through the plurality of first gas inlets A microwave plasma device comprising a first swirl module, wherein the second swirl module has a plurality of second gas inlets configured to generate a second swirling gas flow towards the liner, and the first swirl module and the second swirl module are configured such that the first swirling gas flow and the second swirling gas flow merge into a composite gas flow before entering the liner.

[0008] In some embodiments, the microwave plasma device further comprises a microwave power source configured to communicate with the composite gas flow and provide microwave radiation upon contact with the composite gas flow to generate microwave plasma. In some embodiments, the microwave power source provides at least 70 KW of microwave radiation.

[0009] In some embodiments, the microwave plasma device further comprises a first flow module, a second flow module, or one or more feed material inlets in communication with the liner, the one or more feed material inlets being configured to provide feed material to the microwave plasma.

[0010] In some embodiments, the plurality of first gas inlets are configured to generate a first swirling gas flow in a counterclockwise direction. In some embodiments, the plurality of second gas inlets are configured to generate a second swirling gas flow in a counterclockwise direction. In some embodiments, the plurality of gas inlets are configured to generate a second swirling gas flow in a clockwise direction. In some embodiments, the plurality of first gas inlets are configured to generate a first swirling gas flow in a clockwise direction. In some embodiments, the plurality of second gas inlets are configured to generate a second swirling gas flow in a counterclockwise direction. In some embodiments, the plurality of second gas inlets are configured to generate a second swirling gas flow in a clockwise direction.

[0011] In some embodiments, the plurality of first gas inlets includes two inlets. In some embodiments, the plurality of second gas inlets includes two inlets. In some embodiments, the plurality of first gas inlets includes three or more inlets. In some embodiments, the plurality of second gas inlets includes three or more inlets.

[0012] In some embodiments, at least one of the plurality of first gas inlets is oriented at an angle of 0° to 90° with respect to at least one other of the plurality of first gas inlets. In some embodiments, at least one of the plurality of second gas inlets is oriented at an angle of 0° to 90° with respect to at least one other of the plurality of second gas inlets.

[0013] In some embodiments, the first swirling gas flow includes an ionized gas. In some embodiments, the plurality of first gas inlets has an inlet diameter of from about 0.335 inches to about 0.393 inches. In some embodiments, the plurality of second gas inlets has an inlet diameter of from about 0.0161 inches to about 0.0345 inches.

[0014] In some embodiments, the first flow module, the second flow module, and the liner are further configured to introduce a composite gas flow into a reaction chamber downstream of the liner.

[0015] The drawings are provided to illustrate exemplary embodiments and are not intended to limit the scope of the present disclosure. A better understanding of the systems and methods described herein will be understood by reference to the following description in conjunction with the accompanying drawings.

Brief Description of the Drawings

[0016]

Figure 1

Figure 2A

Figure 2B

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

DETAILED DESCRIPTION OF THE INVENTION

[0017] Specific preferred embodiments and examples are disclosed below, but the subject matter of the present invention extends beyond the specifically disclosed embodiments to other alternative embodiments and / or uses, as well as modifications and equivalents thereof. Accordingly, the appended claims or claims presented in the future are not limited by any of the specific embodiments described below. For example, in any method or process disclosed herein, the acts or operations of the method or process may be performed in any suitable order and are not necessarily limited to any particular disclosed order. The various operations can be described sequentially as a plurality of individual operations in a manner that may be helpful in understanding the particular embodiments, but the order of description should not be construed to mean that these operations are order-dependent. Further, the structures, systems, and / or devices described herein may be embodied as integrated components or as separate components. For purposes of comparing the various embodiments, certain aspects and advantages of these embodiments are described. Not all such aspects or advantages are necessarily achieved by a particular embodiment. Thus, for example, the various embodiments may be implemented to achieve or optimize one advantage or group of advantages as taught herein without necessarily achieving other aspects or advantages as may be taught or suggested herein.

[0018] Here, to provide an overall understanding of the structure, function, manufacture, and principles of use of the devices and methods disclosed herein, certain exemplary embodiments are described. One or more examples of these embodiments are shown in the accompanying drawings. Those skilled in the art will understand that the devices and methods specifically described herein and shown in the accompanying drawings are non-limiting exemplary embodiments and that the scope of the present invention is defined only by the claims. Features illustrated or described in connection with one exemplary embodiment can be combined with the features of other embodiments. Such modifications and variations are intended to be included within the scope of this technology.

[0019] In some embodiments, the plasma of the microwave plasma device may be stabilized by a swirling gas flow and may be centered. For example, there may be a small swirling orifice jet within the device for injecting the swirling gas. The high speed and swirling action of this swirling gas flow protect the inner diameter of the torch from the high heat associated with the plasma. The annular swirling chamber may be in fluid communication with the interior of the plasma device via a plurality of swirling jets. The swirling jets may be arranged at any angle with respect to the core gas flow of the device. For example, the swirling jets may be arranged substantially perpendicular to the spindle and the core gas flow and substantially offset from the spindle and the core gas flow. However, in some embodiments, the swirling jets may also be arranged at an angle with respect to the axis and the core gas flow.

[0020] In some embodiments, the plasma generated by the microwave plasma torch can reach extremely high temperatures on the order of 6000 Kelvin (6,000 K). Thus, in some embodiments, the swirling gas may be supplied to the inner surface of the torch prior to ignition of the plasma jet. The swirling gas may be supplied from a swirling gas source via a swirling jet so as to establish a swirling or helical swirling gas flow between the core gas flow and the inner surface. After ignition of the plasma, the swirling swirling flow prevents the plasma jet from adhering to the inner surface, thereby preventing melting of the plasma chamber due to conductive heat transfer between the plasma and the inner surface. The swirling gas also removes some of the heat transferred from the plasma to the inner surface by radiation.

[0021] FIG. 1 shows an exemplary microwave plasma torch 100 that can be used in the manufacture of materials. In some embodiments, the raw materials can be introduced into the microwave plasma 104 via one or more raw material inlets 102. In some embodiments, a carrier gas flow and / or a sheath flow can be injected into the microwave plasma applicator 105 to create flow conditions within the plasma applicator prior to ignition of the plasma 104 via the microwave radiation source 106. In some embodiments, both the carrier flow and the sheath flow are axisymmetric and laminar, while in other embodiments, the gas flow is swirling. In some embodiments, the raw materials may be introduced into the microwave plasma torch 100 and the raw materials may be entrained by a gas flow that directs the materials towards the plasma 104.

[0022] In some embodiments, within the microwave plasma 104, the raw materials can undergo physical and / or chemical transformations. The inlet 102 can be used to introduce process gas to entrain and accelerate the raw materials towards the plasma 104. In some embodiments, a second swirling gas flow can be created to provide a sheath for the inner walls of the plasma applicator 104 and the reaction chamber 110 to protect these structures from melting due to thermal radiation from the plasma 104.

[0023] The various parameters of the microwave plasma 104 created by the plasma applicator 105 can be adjusted manually or automatically to achieve the desired material. These parameters can include, for example, power, plasma gas flow rate, type of plasma gas, presence of an extension tube, extension tube material, level of insulation of the reactor chamber or extension tube, level of coating of the extension tube, geometric shape of the extension tube (e.g., tapered / stepped), feed material size, feed material insertion rate, feed material inlet position, feed material inlet orientation, number of feed material inlets, plasma temperature, residence time, and cooling rate. The resulting material can exit the plasma and enter a sealed chamber 112 where the material is quenched and then collected.

[0024] In some embodiments, the feedstock is injected after the microwave plasma applicator for treatment by the "plume" or "exhaust" of the microwave plasma torch. Thus, the plasma of the microwave plasma torch is engaged at the exit end of the plasma torch core tube 108, or further downstream. In some embodiments, an adjustable downstream feed enables the feedstock to be engaged with the downstream plasma plume at a temperature suitable for optimal melting of the feedstock by precise targeting of the temperature level and residence time. Further customization of the material properties may be possible by adjusting the inlet position and plasma characteristics. Additionally, in some embodiments, the length of the plasma plume can be adjusted by adjusting the power, gas flow rate, pressure, and equipment configuration (e.g., introducing an extension tube).

[0025] In some embodiments, the feed configuration can include one or more individual feed nozzles surrounding the plasma plume. The feedstock can enter the plasma from any direction and can be supplied 360° around the plasma depending on the placement and orientation of the inlet 102. Furthermore, the feedstock can enter the plasma at specific locations along the length of the plasma 104 by adjusting the placement of the inlet 102, where specific temperatures are measured and residence times are estimated to provide the desired properties of the resulting material.

[0026] In some embodiments, the angle of the inlet 102 with respect to the plasma 104 can be adjusted so that the feedstock can be injected at any angle with respect to the plasma 104. In some embodiments, the implementation of the downstream injection method can use downstream swirl or quenching. Downstream swirl refers to an additional swirl component that can be introduced downstream from the plasma applicator to keep the powder away from the walls of the applicator 105, the reactor chamber 110, and / or the extension tube 114.

[0027] Figures 2A - 2B show an exemplary microwave plasma torch that includes a side feed hopper and thus enables downstream feeding. Thus, in this embodiment, the raw material is injected after the microwave plasma torch applicator for treatment in the "plume" or "exhaust" of the microwave plasma torch. Thus, the plasma of the microwave plasma torch engages at the outlet end of the plasma torch to enable downstream feeding of the raw material as opposed to an upper (or upstream) feed. This downstream feeding advantageously extends the life of the torch as the hot zone is indefinitely protected from any material deposits on the walls of the hot zone liner. Further, this enables engaging the downstream plasma plume at a temperature suitable for optimal melting of the powder by precise targeting of temperature levels and residence times. For example, there is the ability to adjust the length of the plume using microwave powder, gas flow, and pressure within a quench vessel that includes the plasma plume.

[0028] Generally, downstream feeding can utilize two main hardware configurations for establishing a stable plasma plume, which are the annular torch described in U.S. Patent Application Publication No. 2018 / 0297122, which is hereby incorporated by reference in its entirety, or the swirling torch described in U.S. Patent No. 8,748,785 and U.S. Patent No. 9,932,673, which are hereby incorporated by reference in their entireties. A feed system that is closely coupled to the plasma plume at the outlet of the plasma torch is used to supply the powder axially symmetrically to maintain process uniformity.

[0029] Other feed configurations can include one or several individual feed nozzles that surround the plasma plume. The raw material powder can enter the plasma at a point from any direction and can be supplied to a point within the plasma from any of the 360° directions around the plasma. The raw material powder can enter the plasma at a specific location along the length of the plasma plume where a specific temperature is measured and the residence time is estimated for sufficient melting of the particles. The melted particles exit the plasma and enter a sealed chamber where they are quenched and then collected.

[0030] The feedstock 214 can be introduced into the microwave plasma applicator 202. The hopper 206 can be used to store the feedstock 214 before supplying it to the microwave plasma applicator 202, the plume and / or the exhaust 218. The feedstock 214 can be injected at any angle, 5, 10, 15, 20, 25, 30, 35, 40, 45, 50, or 55 degrees, with respect to the longitudinal direction of the plasma applicator 302. In some embodiments, the raw material can be injected at an angle greater than 5, 10, 15, 20, 25, 30, 35, 40, 45, 50, or 55 degrees. In some embodiments, the raw material can be injected at an angle less than 5, 10, 15, 20, 25, 30, 35, 40, 45, 50, or 55 degrees. In alternative embodiments, the raw material can be injected along the longitudinal axis of the plasma torch.

[0031] Microwave radiation can enter the plasma applicator 202 through the waveguide 204. The feedstock 214 is supplied into the plasma chamber 210 and is arranged to contact the plasma generated by the plasma applicator 202. When contacting the plasma, the plasma plume, or the plasma exhaust 218, the feedstock melts. The feedstock 214 cools and solidifies before being collected in the container 212 while still in the plasma chamber 210. Alternatively, the feedstock 214 can exit the plasma chamber 210 through the outlet 212 while still in the molten phase and cool and solidify outside the plasma chamber. In some embodiments, a quench chamber that may or may not use positive pressure can be used. Although described separately from FIG. 1, it is understood that the embodiments of FIGS. 2A and 2B use similar features and conditions as the embodiment of FIG. 1.

[0032] Figure 3 shows another exemplary plasma device for processing a feedstock. In some embodiments, the swirling gas flow may originate from a swirling chamber or module of a microwave plasma device. The swirling gas flow can be generated within a swirling chamber having a small orifice swirling jet oriented at an angle with respect to the inner surface of a torch that can include a protective liner. The high speed and swirling action of this flow protects the inner diameter of the torch from the high heat associated with the plasma. In some embodiments, a core gas flow, including a primary ionization gas, originates from a core flow chamber or module upstream of the swirling flow module. In some embodiments, this core gas flow is substantially straight and is intended to absorb most of the microwave energy (with respect to the swirling flow).

[0033] As shown in FIG. 4, in some embodiments, the core flow module forms a bend prior to mixing and combines two oppositely oriented gas flows that enter a swirling module downstream of the core flow module. In some examples of this configuration, the core plasma gas flow and the swirling flow may collide with each other, creating undesirable flow deviations that change over time. These deviations can aid in flow mixing, but the deviations introduce non-uniformity into the resulting plasma and reduce flow coherence. In essence, the plasma plume always needs to be "updated" to the varying inflow flow pattern.

[0034] According to some embodiments, a new flow paradigm for a core flow module is described herein, in which a vortex or swirling component is added to the flow upstream of the swirl module. By combining the swirling flow component from the core flow module with the swirling flow from the swirl flow module, a composite flow entering the liner region is formed. In some embodiments, the composition and temperature of the core swirling flow and the gas flow from the swirl flow module are substantially similar or identical. These flows can form a "composite flow" (i.e., two upstream swirling flows). However, the outer swirling flow from the swirl flow module introduced after the core swirling flow may be injected at a significantly higher velocity at the outer periphery of the flow so as to shield the liner from the high temperature of the ionized core swirling flow. The high angular momentum of the swirling flow from the swirl flow module propels it outward toward the outer periphery and holds it outside away from the core swirling flow. In some embodiments, the inlet velocity of the swirling flow is preferably 3.5 to 9 times faster than the core swirling flow, but acceptable performance can be achieved in a wider range, such as 1.5 to 20 times faster than the core swirling flow, for example.

[0035] FIG. 5 shows an exemplary microwave plasma processing apparatus according to some embodiments herein. As shown in FIG. 5, the microwave plasma apparatus includes a core swirl module upstream of the swirl flow module. In some embodiments, adding swirl to the core flow provides coherence and uniformity to the gas flow. In the configuration of FIG. 5, any deviation from the nominal flow pattern is a matter of degree, not form, but the core flow module configuration of FIG. 3 introduces variability in the flow pattern. In some embodiments, the swirling characteristics of the upstream core swirling flow provide fullness and stability to the plasma frame and expand the acceptable input flow rate range for maintaining the plasma. For example, in some embodiments herein, power / The flow rate can range from about 0.3 kW / scfm to about 5.5 kW / scfm. Thus, in some embodiments, at low power around 10 kW, the gas flow rate of either the core swirling flow or the outer swirling flow can be as low as 1.8 scfm, and at high power of 100 kW, the gas flow rate can be as high as 330 scfm. The process sequence according to FIG. 5 starts from the core swirling module, followed by the swirling flow module, the microwave plasma applicator and generation zone, and the material supply section. In some embodiments, the quench gas may be introduced at the same location as the material supply section. The configuration of this process flow and plasma device is different from the conventional configuration because the configuration of the embodiments herein involves the generation of a gas swirling flow upstream of the plasma applicator and the material supply section. For example, in the process sequence shown in FIG. 2B, the core flow module is arranged upstream of the plasma applicator and generator. The core flow module generates a substantially straight gas flow towards the microwave generator 204. No swirling flow is generated before the material supply section of the microwave generator or the plasma device. Rather, the swirling flow is generated downstream of the microwave generator 204 and the material supply section.

[0036] In some embodiments, as shown in the configuration of FIG. 6, the core swirling module and the swirling flow module can generate gas flows that swirl in the same direction. For example, both modules can use corresponding swirling jets to generate clockwise or counterclockwise flows. However, using an anti-spin configuration where the core swirling flow generates a flow in an orientation opposite to that of the swirling flow module also shows improved plasma performance with respect to the straight core flow. This suggests that the coherence of the core flow is important for plasma stability even if it is opposite to the swirling flow.

[0037] In some embodiments, the swirling core flow can be generated to vary over several variables. One or more (n = 2, 3, 4, 5, 6, 7, 8, 9, 10, 15, 20, 25, 30, 35, 40, 45, 50, 100, or any value between the foregoing values) inlet flows having an offset and an inclination with respect to the center point of the plasma tube can be arranged. When orienting the system from an overhead view, the "offset" can represent the shortest distance between the axis of the inlet and the center of rotation of the system. In other words, instead of the jet being directed directly at the center, the jet may be inclined with respect to the center point by some "offset". Thus, in some embodiments, the jet is "inclined" or the jet is "offset". FIG. 8 shows an example of the concept of angle and offset with respect to the jet. For example, one or more inlet flows may be oriented with respect to the center point at an angle of about 0°, about 5°, about 10°, about 15°, about 20°, about 25°, about 30°, about 35°, about 40°, about 45°, about 50°, about 55°, about 60°, about 65°, about 70°, about 75°, about 80°, about 85°, about 90°, or any value between the foregoing values. In some embodiments, one or more inlet flows may be oriented at an angle of about 9.6° or 10° with respect to the center point. For example, the diameter of the core swirling inlet may be less than about 0.335 inches, or may be from about 0.335 inches to about 0.393 inches. In the case of the secondary swirling module inlet, the diameter may be about 0.023 inches. In some embodiments, the diameter of the swirling module inlet may be from about 0.0161 inches to about 0.0345 inches. Further, the inlet diameter of the orifice can be varied to provide the desired flow rate. FIG. 7 shows an exemplary swirling gas inlet configuration in which a counterclockwise swirling gas flow is generated.

[0038] In some embodiments, the configuration of FIG. 5 with the core rotation module and the rotation flow module can enable stable plasma generation at a lower power level. For example, stable and uniform plasma can be generated at a power level of about 70 KW or more. The instability of the conventional design prevents the use of higher power levels. This instability increases with the increase in flow and results in arc discharge and hot spots on the liner of the plasma device. Therefore, conventional microwave plasma devices utilize only up to 45 kW of power. Furthermore, the stability achieved with the design described herein results in a more compact plasma and thus less interaction with the liner. For example, when using Ar / H2 gas, this compact plasma enables the reduction of %H2 to 5% while maintaining stability. In conventional configurations, a higher H2 percentage was previously required to keep the plasma more compact.

[0039] Microwave Plasma Treatment In the microwave plasma process, the raw material can be entrained in an inert and / or reducing gas environment and injected into a microwave plasma, a microwave plasma plume, or a microwave plasma exhaust. When injected into the high-temperature plasma (or plasma plume or exhaust), the raw material can undergo physical and / or chemical conversion (e.g., spheroidization). After treatment, the resulting material is discharged into a chamber filled with an inert gas and introduced into a sealed drum where it is stored. This process can be carried out at atmospheric pressure, partial vacuum, or a pressure slightly higher than atmospheric pressure.

[0040] In an alternative embodiment, the process can be carried out in a low, medium, or high vacuum environment. This process can be carried out batchwise or continuously, and the drum is replaced when filled with the treated material. By controlling process parameters such as the cooling gas flow rate, residence time, plasma conditions, cooling gas composition, etc., various material properties can be controlled.

[0041] The residence time of particles within the hot zone of the plasma can also be adjusted to control the resulting material properties. That is, the length of time the particles are exposed to the plasma determines the degree of melting of the feed particles (i.e., the surface of the melted particles compared to the innermost part or core of the particles). The residence time can be adjusted by adjusting such operating variables as the particle injection rate and the flow rate (conditions such as laminar or turbulent flow) within the hot zone. The residence time can also be adjusted using equipment modifications. For example, the residence time can be adjusted by changing the cross-sectional area of the plasma, such as by expanding the plasma. In some embodiments, expanding the plasma can include incorporating an extension tube into the microwave plasma device.

[0042] Additional embodiments In the foregoing specification, the invention has been described with reference to its specific embodiments. However, it will be apparent that various modifications and changes can be made without departing from the broader spirit and scope of the invention. Accordingly, the specification and drawings are to be regarded in an illustrative rather than a limiting sense.

[0043] Indeed, although the present invention is disclosed in the context of specific embodiments and examples, it will be understood by those skilled in the art that the invention extends beyond the specifically disclosed embodiments to other alternative embodiments and / or uses of the invention, as well as obvious modifications and their equivalents. Further, while several variations of embodiments of the present invention have been shown and described in detail, other modifications within the scope of the present invention will be readily apparent to those skilled in the art based on this disclosure. Also, various combinations or sub - combinations of specific features and aspects of the embodiments may be made and still fall within the scope of the present invention. It should be understood that the various features and aspects of the disclosed embodiments may be combined with or replaced by one another to form various forms of the disclosed embodiments. None of the methods disclosed herein need to be performed in the recited order. Accordingly, it is intended that the scope of the invention disclosed herein not be limited by the specific embodiments described above.

[0044] Each of the systems and methods of the present disclosure has several innovative aspects, one of which alone does not solely bear the desirable attributes disclosed herein or is not required for the desirable attributes. The various features and processes described above may be used independently of one another or combined in various ways. All possible combinations and sub - combinations are intended to fall within the scope of the present disclosure.

[0045] Certain features described herein in the context of separate embodiments may also be implemented in combination in a single embodiment. Conversely, the various features described in the context of a single embodiment may also be implemented separately, or in any suitable subcombination, in multiple embodiments. Further, features may be described and initially claimed as acting in certain combinations, but one or more features from a claimed combination may, in some cases, be excised from the combination, and the claimed combination may be directed to a subcombination or a variation of a subcombination. A single feature or group of features is not necessary or essential to every embodiment.

[0046] Conditional language used herein, such as "can", "could", "might", "may", "e.g.", etc., unless otherwise specified or understood in a different sense within the context in which it is used, is generally intended to convey that a particular embodiment includes a particular feature, element, and / or step, while other embodiments do not. Thus, such conditional language is generally not intended to mean that a feature, element, and / or step is required in any way in one or more embodiments, or that one or more embodiments necessarily include logic for determining whether these features, elements, and / or steps are included in or should be performed in any particular embodiment, regardless of the author's input or prompt. Terms such as "comprising", "including", "having", etc. are synonymous and are used in an open-ended fashion, without excluding additional elements, features, acts, operations, etc. Further, the term "or" is used in an inclusive sense (not an exclusive sense), e.g., when used to connect a list of elements, the term "or" means one, some, or all of the elements in the list. Further, the articles "a", "an", and "the" used in this application and the appended claims should be construed to mean "one or more" or "at least one" unless otherwise specified. Similarly, although operations are shown in a particular order in the drawings, in order to achieve a desired result, such operations need not be performed in the particular order or sequential order shown, and it should be recognized that not all of the operations shown need to be performed. Further, the drawings can schematically illustrate one further exemplary process in the form of a flowchart. However, other operations not shown may be incorporated into the exemplary methods and processes schematically shown.For example, one or more additional operations can be performed before, after, simultaneously with, or in between any of the illustrated operations. Further, the operations may be rearranged or reordered in other embodiments. In certain situations, multitasking and parallel processing may be advantageous. Further, the separation of various system components in the above-described embodiments should not be understood to require such separation in all embodiments, and it should be understood that the described program components and systems may generally be integrated together into a single software product or packaged into multiple software products. Further, other embodiments are within the scope of the following claims. In some cases, the operations recited in the claims may be performed in a different order and still achieve desirable results.

[0047] Furthermore, the methods and devices described herein may be susceptible to various modifications and alternative forms, specific examples of which are shown in the drawings and described in detail herein. However, the present invention is not limited to the specific forms or methods disclosed, but on the contrary, the present invention is intended to cover all modifications, equivalents, and alternatives that fall within the spirit and scope of the various embodiments described and the appended claims. Additionally, the disclosure herein of any specific feature, aspect, method, property, characteristic, quality, attribute, element, etc. related to an embodiment or embodiments can be used in any of the other embodiments or embodiments described herein. None of the methods disclosed herein need to be performed in the order recited. The methods disclosed herein can include specific operations performed by a practitioner, but the methods can also, explicitly or implicitly, include any third-party instructions for those operations. The scope disclosed herein also encompasses any and all overlaps, subranges, and combinations thereof. Language such as "up to," "at least," "greater than," "less than," "between," etc. includes the recited numbers. Numbers preceded by terms such as "about" or "approximately" include the recited numbers and should be interpreted based on the context (e.g., as accurately as reasonably possible in the context, e.g., ±5%, ±10%, ±15%, etc.). For example, "about 3.5 mm" includes "3.5 mm." Phrases preceded by terms such as "substantially" include the recited phrases and should be interpreted based on the context (e.g., as reasonably possible in the context). For example, "substantially constant" includes "constant." Unless otherwise specified, all measurements are made under standard conditions including temperature and pressure.

[0048] As used herein, the phrase "at least one" of a list of items refers to any combination of those items including a single member. By way of example, "at least one of A, B, or C" is intended to include A, B, C, A and B, A and C, B and C, and A, B, and C. Conjunctive language such as the phrase "at least one of X, Y, and Z" will be understood in context to mean that an item, term, etc. may be at least one of X, Y, or Z, among other things, unless specified otherwise. Thus, such conjunctive language is not generally intended to mean that each of the specific embodiments must separately require at least one of X, at least one of Y, and at least one of Z for their respective existence. Headings provided herein, if any, are for convenience only and do not necessarily affect the scope or meaning of the devices and methods disclosed herein.

[0049] Accordingly, the claims are not intended to be limited to the embodiments shown herein but are to be accorded the broadest scope consistent with the disclosure, principles, and novel features disclosed herein.

Claims

1. A microwave plasma device for processing materials, comprising a first flow module, a second flow module, and a liner, a first swirling module communicating with the second flow module, the first swirling module comprising a plurality of first gas inlets configured to generate a first swirling gas flow directed towards the second swirling module, and the first swirling module wherein the second swirling module comprises a plurality of second gas inlets configured to generate a second swirling gas flow directed towards the liner, wherein the first swirling module and the second swirling module are configured such that the first swirling gas flow and the second swirling gas flow merge into a composite gas flow before entering the liner.

2. The microwave plasma device according to claim 1, further comprising a microwave power source configured to communicate with the composite gas flow and provide microwave radiation upon contact with the composite gas flow to generate microwave plasma.

3. The microwave plasma device according to claim 2, wherein the microwave power source provides microwave radiation of at least 70 KW.

4. The microwave plasma device according to claim 2, further comprising one or more supply material inlets communicating with the first flow module, the second flow module, or the liner, the one or more supply material inlets being configured to provide a supply material to the microwave plasma.

5. The microwave plasma device according to claim 1, wherein the plurality of first gas inlets are configured to generate the first swirling gas flow in a counterclockwise direction.

6. The microwave plasma device according to claim 1, wherein the plurality of second gas inlets are configured to generate the second swirling gas flow in a counterclockwise direction.

7. The microwave plasma device according to claim 1, wherein the plurality of gas inlets are configured to generate the second swirling gas flow in a clockwise direction.

8. The microwave plasma device according to claim 1, wherein the plurality of first gas inlets are configured to generate the first swirling gas flow in a clockwise direction.

9. The microwave plasma device according to claim 1, wherein the plurality of second gas inlets are configured to generate the second swirling gas flow in a counterclockwise direction.

10. The microwave plasma device according to claim 1, wherein the plurality of second gas inlets are configured to generate the second swirling gas flow in the clockwise direction.

11. The microwave plasma device according to claim 1, wherein the plurality of first gas inlets comprise two inlets.

12. The microwave plasma device according to claim 1, wherein the plurality of second gas inlets comprise two inlets.

13. The microwave plasma device according to claim 1, wherein the plurality of first gas inlets comprise three or more inlets. lasma device.

14. The microwave plasma device according to claim 1, wherein the plurality of second gas inlets comprise three or more inlets.

15. The microwave plasma device according to claim 1, wherein at least one of the plurality of first gas inlets is oriented at an angle of 0° to 90° with respect to at least one other gas inlet of the plurality of first gas inlets.

16. The microwave plasma device according to claim 1, wherein at least one of the plurality of second gas inlets is oriented at an angle of 0° to 90° with respect to at least one other gas inlet of the plurality of second gas inlets.

17. The microwave plasma device according to claim 1, wherein the first swirling gas flow contains an ionized gas.

18. The microwave plasma device according to claim 1, wherein the plurality of first gas inlets have an inlet diameter of about 0.335 inches to about 0.393 inches.

19. The microwave plasma device according to claim 1, wherein the plurality of second gas inlets have an inlet diameter of about 0.0161 inches to about 0.0345 inches.

20. The microwave plasma device according to claim 1, wherein the first flow module, the second flow module, and the liner are further configured to introduce the composite gas flow into a reaction chamber downstream of the liner.

Images