Semiconductor Process Equipment

Abstract

The driving device of the semiconductor process equipment is provided on the process door, connected to the wafer boat support portion arranged in the process chamber, and used to rotationally drive the wafer boat support portion. The protective gas pipeline is provided in the cavity and used to introduce the protective gas that separates the process gas from the driving device. The process door is movably connected to the opening of the cavity and used to close or open the opening. When the opening is closed, it forms by surrounding the cavity and the process chamber. An intake passage is provided in the process door. The first port portion of the intake passage is adjacent to the driving device and used to transport the protective gas. When the process door closes the opening, the second port portion of the intake passage is butted against the protective gas pipeline. The first heating device is connected to the portion of the protective gas pipeline exposed from the cavity and used to heat the protective gas pipeline.

Description

Technical Field

[0001] This application belongs to the technical field of semiconductor process equipment, and specifically relates to semiconductor process equipment.

Background Art

[0002] Semiconductor process equipment is the main device for processing wafers. There may be multiple types of process gases in the process chamber of semiconductor process equipment, including corrosive gases such as hydrogen chloride gas. In order to prevent the corrosion of corrosive gases to the drive device in semiconductor process equipment, in related technologies, the corrosion of corrosive gases to the drive device is blocked by a protective gas. At the same time, in order to avoid affecting the wafers to be processed due to the deposition of by-products in the process chamber, it is necessary to heat the protective gas entering the process chamber to a predetermined temperature or higher.

[0003] In related technologies, the pipeline of the protective gas is provided on the process door, and the process door and the cavity are movably connected by a movable cable drag chain. Some pipelines are provided on the movable cable drag chain. Due to the repeated movement of the movable cable drag chain, the pipeline part inside the movable cable drag chain cannot be heated. Moreover, the space where the process door is located is small, and the length of the pipeline that can heat the protective gas is short. As a result, when the protective gas does not reach the predetermined temperature and enters the process chamber, that is, the protective gas enters the process chamber at a relatively low temperature, the deposition phenomenon of by-products in the process chamber becomes serious.

Summary of the Invention

Problems to be Solved by the Invention

[0004] An embodiment of this application aims to disclose a semiconductor process equipment that can solve the problem that in the background art, when the protective gas does not reach the predetermined temperature and enters the process chamber, the deposition phenomenon of by-products in the process chamber becomes serious.

Means for Solving the Problem

[0005] To solve the above technical problem, the present application is realized as follows.

[0006] In a first aspect, an embodiment of the present application discloses a semiconductor process equipment. The disclosed semiconductor process equipment includes a cavity, a process door, a driving device, a wafer boat support, a protective gas pipeline, and a first heating device. The driving device is provided on the process door and connected to the wafer boat support disposed in the process chamber, and is used to rotationally drive the wafer boat support. The protective gas pipeline is provided in the cavity and is used to introduce a protective gas that separates the process gas and the driving device. The process door is movably connected to the opening of the cavity, and is used to close or open the opening, and forms an enclosure around the cavity and the process chamber when the opening is closed. An intake passage is provided in the process door. A first port portion of the intake passage is adjacent to the driving device and is used to transport the protective gas. When the process door closes the opening, a second port portion of the intake passage is butted against the protective gas pipeline. The first heating device is connected to a portion of the protective gas pipeline exposed from the cavity and is used to heat the protective gas pipeline.

Advantages of the Invention

[0007] The technical solution adopted in the present application can achieve the following beneficial effects.

[0008] The semiconductor process equipment disclosed in the embodiments of the present application improves the structure of the semiconductor process equipment in the related art. By providing a protective gas pipeline in the cavity, when the process door closes the opening of the cavity and forms a surrounding for the cavity and the process chamber, the cavity does not need to move. Therefore, the movement of the protective gas pipeline provided in the cavity can be avoided. Moreover, there is a large space outside the cavity. Thus, the protective gas pipeline may be provided to be long outside the cavity. The first heating device can realize the heating of the long protective gas pipeline. Further, the first heating device can heat the protective gas in the protective gas pipeline to a predetermined temperature before introducing it into the process chamber. Furthermore, it can avoid the problem that when the protective gas does not reach the predetermined temperature and is introduced into the process chamber, the deposition of by-products in the process chamber becomes serious.

Brief Description of the Drawings

[0009]

Figure 1

Figure 2

Figure 3

Figure 4

Modes for Carrying Out the Invention

[0010] Hereinafter, while referring to the drawings of the embodiments of the present application, the technical solutions of the embodiments of the present application will be clearly and completely described. Obviously, the described embodiments are only a part of the embodiments of the present application, not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative labor belong to the protection scope of the present application.

[0011] The terms "first", "second", etc. in the description and claims of this application are used to distinguish similar objects and are not for explaining a specific order or sequence. Data used in this way can be exchanged when appropriate, so it can be understood that the embodiments of this application can be implemented in an order other than those illustrated or described in this specification. Moreover, the objects classified as "first", "second", etc. are generally of the same type and do not limit the number of objects. For example, the first object may be one or a plurality. Also, "and / or" in the description and claims represents at least one of the connected objects, and the symbol " / " generally represents that the related objects before and after are in an "or" relationship.

[0012] The following will refer to the drawings and explain in detail the semiconductor process equipment disclosed in the embodiments of this application by means of specific embodiments and their application scenarios.

[0013] As shown in FIGS. 1 to 4, the embodiments of this application disclose a semiconductor process equipment, and the disclosed semiconductor process equipment includes a cavity 100, a process door 200, a driving device 300, a wafer boat support 400, a protective gas pipeline 500, and a first heating device 610.

[0014] The process door 200 is movably connected to the opening 111 of the cavity 100 and is used to close or open the opening 111. When the process door 200 moves to the closed position to close the opening 111, it can be engaged with the opening 111 to achieve the occlusion of the opening 111. When the process door 200 moves to the open position to open the opening 111, the opening 111 is opened so that the wafer boat can pass through. Optionally, the movable connection method between the cavity 100 and the process door 200 is rotation or movable connection, whereby the process door 200 can rotate or move between the closed position and the open position of the opening 111.

[0015] When the process door 200 closes the opening 111, the process door 200 is used to cover the opening 111, whereby the process door 200 and the cavity 100 can form a surrounding of the process chamber 700. The process chamber 700 is a reaction chamber for the wafer to be processed. The wafer boat support 400 is provided in the process chamber 700, and a wafer boat on which the wafer to be processed is placed can be placed on the wafer boat support 400, and it is used to indirectly exert a supporting effect on the wafer to be processed. The driving device 300 is provided on the process door 200, connected to the wafer boat support 400 arranged in the process chamber 700, and is used to rotationally drive the wafer boat support 400 to ensure the consistency of the process conditions in the process flow. During the operation of the semiconductor process equipment, there is a process gas for processing the wafer to be processed in the process chamber 700. A wafer boat on which the wafer to be processed is placed can be placed on the wafer boat support 400. The driving device 300 is provided on the process door 200, connected to the wafer boat support 400 arranged in the process chamber 700, and can rotationally drive the wafer boat support 400. Thereby, the wafer boat support 400 can drive the wafer to be processed to rotate together, and the process gas can achieve uniform processing of the wafer to be processed.

[0016] The protective gas pipeline 500 is provided in the cavity 100 and is used to introduce a protective gas that separates the process gas from the driving device. The protective gas may be an inert gas. Specifically, the protective gas may be nitrogen gas, or the protective gas may be other types of gases. The embodiments of the present application do not specifically limit the type of the protective gas. An intake passage 210 is provided in the process door 200. When the process door 200 covers the opening 111 of the cavity 100 and closes the opening 111, that is, when the process door 200 and the cavity 100 surround and form the process chamber 700, the second port portion 212 of the intake passage 210 is butted against the protective gas pipeline 500. Thereby, the protective gas in the protective gas pipeline 500 can be introduced into the intake passage 210 of the process door 200, and the first port portion 211 of the intake passage 210 is adjacent to the driving device 300. Thereby, the protective gas in the protective gas pipeline 500 can pass through the first port portion 211 and purge the driving device 300. That is, the protective gas pipeline 500 and the intake passage 210 can play a role in transporting a protective gas that separates the process gas from the driving device 300. Thereby, it is possible to avoid corrosive gas in the process gas from contacting the driving device 300 and further corroding the driving device 300.

[0017] In an alternative means, when at least a part of the process door 200 is separated from the cavity 100 and the opening 111 is opened, the second port portion 212 of the intake passage 210 is separated from the protective gas pipeline 500.

[0018] The first heating device 610 is connected to the portion of the protective gas pipeline 500 that is exposed from the cavity 100 and is used to heat the protective gas pipeline 500. Thereby, the first heating device 610 can heat the portion of the protective gas pipeline 500 that is exposed from the cavity 100. Moreover, the outside of the cavity 100 has a larger space than the bottom of the process door 200, and in the process of the opening 111 of the cavity 100 engaging with the process door 200, the cavity 100 does not need to move. Thereby, the protective gas pipeline 500 may be arranged to be relatively long outside the cavity 100, and the first heating device 610 can achieve heating of the relatively long protective gas pipeline 500. Further, in the process of the protective gas in the protective gas pipeline 500 passing through a relatively long pipeline, it can be ensured that the first heating device 610 can heat it to a predetermined temperature or higher. Furthermore, since the temperature of the protective gas entering the process chamber 700 is relatively low, the problem of serious deposition of by-products in the process chamber 700 can be solved. According to the actual requirements of the reaction in the process chamber 700, the predetermined temperature may be different. In the present application, the predetermined temperature may be 150°C. Of course, the predetermined temperature may also be other temperature values, and the embodiments of the present application do not limit the specific numerical value of the predetermined temperature.

[0019] The semiconductor process equipment disclosed in the embodiments of the present application improves the structure of the semiconductor process equipment in the related art. By providing the protective gas pipeline 500 in the cavity 100, when the process door 200 closes the opening 111 of the cavity 100 and forms a surrounding for the cavity 100 and the process chamber 700, the cavity 100 does not need to move. Therefore, the movement of the protective gas pipeline 500 provided in the cavity 100 can be avoided, that is, it is possible to avoid the protective gas pipeline 500 being provided in the cable drag chain and mostly shielded. The cavity 100 has a relatively large space outside, so that the protective gas pipeline 500 may be provided with a long length outside the cavity 100. The first heating device 610 can realize heating for each of the long protective gas pipelines 500. Further, the first heating device 610 can heat the protective gas in the protective gas pipeline 500 to a predetermined temperature before introducing it into the process chamber 700. Furthermore, when the protective gas does not reach the predetermined temperature and is introduced into the process chamber 700, the problem of serious deposition of by-products in the process chamber 700 can be avoided.

[0020] In the semiconductor process equipment disclosed in the embodiments of the present application, the cavity 100 may include a cavity body 110 and a flange 120. An opening 111 is formed in the cavity body 110. The flange 120 is connected to the cavity body 110 and is provided around the opening 111. The flange 120 protrudes in a direction opposite to the central axis of the opening 111. In this case, as an optional technical solution, the protective gas pipeline 500 may be provided on the flange 120, and the protective gas pipeline 500 penetrates through the flange 120. The exhaust end of the protective gas pipeline 500 is located on the butting surface that abuts against the second port part 212 of the flange 120, thereby avoiding damage to the structural strength of the cavity body 110 by the protective gas pipeline 500. In order to achieve a good butting effect between the protective gas pipeline 500 and the intake passage 210, in another optional technical solution, a communication passage 121 may be formed in the flange 120. The protective gas pipeline 500 is connected to the flange 120 and communicates with the intake end of the communication passage 121. The exhaust end of the communication passage 121 is located on the butting surface that abuts against the second port part 212 of the flange 120. All of the above solutions can achieve a good communication purpose between the protective gas pipeline 500 and the intake passage 210 on the premise of avoiding damage to the cavity body 110. In this specification, the central axis of the opening 111 is the central axis perpendicular to the plane in which the opening 111 exists.

[0021] In an alternative embodiment, the flange 120 and the cavity body 110 may be of an integral structure. Naturally, they may also be of a separate structure and the connection is realized by assembly.

[0022] When realizing the connection between the cavity 100 and the process door 200, in order to provide a good sealing function between the cavity 100 and the process door 200, as a further technical solution, the end face where the opening 111 of the cavity body 110 is located is flush with the surface located on the same side of the flange 120 (i.e., the above-mentioned butting surface), and a cavity sealing surface 130 may be formed. A seal assembly 800 is provided between the cavity sealing surface 130 and the corresponding surface of the process door 200, and the process door 200 is seal-engaged with the cavity sealing surface 130 via the seal assembly 800.

[0023] In the above case, the cavity sealing surface 130 includes the end face where the opening 111 of the cavity body 110 is located and the surface of the flange 120 facing the process door 200. Thus, the cavity sealing surface 130 in the embodiment of the present application has a larger area compared to solely using the surface where the opening 111 of the cavity body 110 is located or the surface of the flange 120 facing the process door 200. Thereby, it is advantageous for the cavity 100 to realize the connection and sealing with the process door 200 via the cavity sealing surface 130. Optionally, the seal assembly 800 may be provided only between the flange 120 and the process door 200, or the seal assembly 800 may be provided only between the end face where the opening 111 is located and the process door 200. The seal assembly 800 may further have a part provided between the process door 200 and the flange 120 and another part provided between the end face where the opening 111 is located and the process door 200. The present application does not limit the specific installation position of the seal assembly 800.

[0024] The configuration method of the seal assembly 800 is diverse. The semiconductor process equipment disclosed in the embodiments of the present application provides a more specific seal assembly 800. Specifically, the seal assembly 800 may include a first seal ring 810 and a second seal ring 820. The second seal ring 820 is disposed around the first seal ring 810. The second port portion 212 is located between the first seal ring 810 and the second seal ring 820. Both the first seal ring 810 and the second seal ring 820 are provided to seal between the cavity seal surface 130 and the corresponding surface of the process door 200. In this case, the cavity 100 can realize a double sealing effect in the circumferential direction between the process door 200 and the process door 200 through the first seal ring 810 and the second seal ring 820 respectively, thereby ensuring the sealing function when the cavity 100 is connected to the process door 200. Moreover, since the second port portion 212 is located between the first seal ring 810 and the second seal ring 820, when the protective gas flows through the second port portion 212, the first seal ring 810 and the second seal ring 820 can play a sealing role for the protective gas at the second port portion 212, thereby preventing the protective gas at the second port portion 212 from overflowing outside the cavity 100 or directly entering the process chamber 700.

[0025] Also, the gas transported at the second port portion 212 is a protective gas, and since the protective gas can play a role in gas sealing, the gas sealing can cooperate with the first seal ring 810 and the second seal ring 820 to further improve the assembly sealing performance between the cavity 100 and the process door 200. In this case, the process gas can play two roles with one substance.

[0026] In the semiconductor process equipment disclosed in the embodiments of the present application, the intake passage 210 may include an intake passage main body 214 and an annular zigzag groove 213. The first passage main body port portion of the intake passage main body 214 is opened in the bottom wall of the annular zigzag groove 213. The second passage main body port portion of the intake passage main body 214 is the first port portion 211. The notch of the annular zigzag groove 213 is the second port portion 212. The process door 200, the flange 120, the first seal ring 810, and the second seal ring 820 form an enclosure around the first assembly gap 920. The first assembly gap 920 surrounds the first seal ring 810. The annular zigzag groove 213 faces and communicates with the first assembly gap 920.

[0027] In the above case, the protective gas in the protective gas pipeline 500 passes through the notch of the annular zigzag groove 213 and is introduced into the first passage main body port portion of the intake passage main body 214. Thereby, the protective gas reaching the first passage main body port portion flows along the intake passage main body 214 to the second passage main body port portion of the intake passage main body 214, and further the protective gas can enter the process chamber 700 from the first port portion 211. At the same time, since the first assembly gap 920 surrounding the first seal ring 810 faces and communicates with the annular zigzag groove 213, it is equivalent to expanding the space near the first assembly gap 920 in another form. Thereby, the gas in the first assembly gap 920 has good fluidity. Thereby, when the process chamber 700 requires a vacuum environment, the gases in both the first assembly gap 920 and the annular zigzag groove 213 can be easily extracted, which is advantageous for improving the evacuation efficiency when evacuating the process chamber 700.

[0028] In a further technical solution, there may be a plurality of intake passage bodies 214. The first passage body port portions of each intake passage body 214 are all opened in the bottom wall of the annular zigzag groove 213, and the second passage body port portions of each intake passage body 214 are all the first port portions 211. In this case, the protective gas can pass through the plurality of intake passage bodies 214 and enter the process chamber 700, which is advantageous for realizing the protection of the driving device 300 by the protective gas. And in order to realize that the protective gas more comprehensively protects the driving device 300, the plurality of second passage body port portions of the plurality of intake passage bodies 214 may be opened around the driving device 300, so that there is a protective gas purging around the driving device 300. Furthermore, the protective gas around the driving device 300 can better avoid the corrosive gas in the process chamber 700 from contacting the driving device 300 and corroding the driving device 300.

[0029] In an alternative technical solution, the orthographic projection of the communication passage 121 on a cross-section perpendicular to its central axis can be located within the orthographic projection of the annular counterbore groove 213 on the cross-section. The communication passage 121 communicates with the annular counterbore groove 213 through the first assembly gap 920. The first dimension of the communication passage 121 is smaller than the width of the notch of the annular counterbore groove 213, and the first dimension is the dimension of the communication passage 121 in the width direction of the notch. In this case, the port portion of the communication passage 121 connected to the annular counterbore groove 213 is smaller than the notch of the annular counterbore groove 213, whereby all the protective gas transported in the communication passage 121 can be quickly introduced into the intake passage main body 214 by the annular counterbore groove 213. At the same time, the annular counterbore groove 213 has a larger cross-sectional area (i.e., the area of the cross-section perpendicular to the central axis) than the communication passage 121, whereby the occupied space of the entire annular counterbore groove 213 is increased, which is more advantageous for the gas to flow between the first assembly gap 920 and the annular counterbore groove 213. When the process chamber 700 requires a vacuum environment, the annular counterbore groove 213 that occupies a large space can reduce the resistance when the gas flows, which helps to completely extract the gas in the first assembly gap 920 and can further improve the evacuation efficiency when evacuating the process chamber 700.

[0030] In the semiconductor process equipment disclosed in the embodiments of the present application, the semiconductor process equipment may further include a second heating device 620. The second heating device 620 is provided on the outer surface of the process door 200 opposite to the process chamber 700. The second heating device 620 is used to heat the protective gas flowing through the intake passage 210, whereby the protective gas heated to a predetermined temperature or higher in the protective gas pipeline 500 can be continuously heated during the process of flowing through the intake passage 210, and thereby the possibility that the temperature of the gas drops below the predetermined temperature during the process of the protective gas heated to a predetermined temperature or higher flowing through the intake passage 210 can be better avoided.

[0031] There is a wide variety of types of the first heating device 610 that can heat the protective gas pipeline 500. The embodiments of the present application provide selectable solution means. In specific technical solution means, the first heating device 610 may be a heating belt wound around the protective gas pipeline 500. In this case, the heating belt may be directly wound around the protective gas pipeline 500, whereby the distance between the heating belt and the protective gas in the protective gas pipeline 500 is relatively close, which is advantageous for improving the heating efficiency of the first heating device 610 to the protective gas, and moreover, the space occupation can be reduced by winding the heating belt around the protective gas pipeline 500. The first heating device 610 may further be a heating wire, and the heating wire may be wound around the protective gas pipeline 500 to heat the protective gas pipeline 500. Of course, according to actual requirements, the first heating device 610 may include both a heating belt and a heating wire, which is advantageous for achieving the purpose of heating the protective gas to a temperature above a predetermined temperature. The embodiments of the present application do not limit the specific manner of heating the protective gas in the protective gas pipeline 500 by the first heating device 610.

[0032] In the semiconductor process equipment disclosed in the embodiments of the present application, the wafer boat support part 400 may include a rotating shaft 410 and a support tray 420. The driving device 300 is connected to the rotating shaft 410. The support tray 420 can rotate together with the rotating shaft 410. Mounting holes may be opened in the process door 200. The driving device 300 is mounted in the mounting holes and connected to the rotating shaft 410, and there is a second assembly gap 930 between the driving device 300 and the hole wall. The first port part 211 is opened in the hole wall of the mounting hole and communicates with the second assembly gap 930. A blowing gap 910 is formed between the rotating shaft 410 and the process door 200, and the blowing gap 910 communicates with the first port part 211.

[0033] In the above case, the driving device 300 rotationally drives the rotating shaft 410, so that the rotating shaft 410 drives the support tray 420 to rotate. The first port portion 211 is opened in the hole wall of the mounting hole, and the first port portion 211 communicates with the second assembly gap 930. Therefore, the protective gas blown out from the first port portion 211 can be sprayed onto the second assembly gap 930, and contact between the driving device 300 and the corrosive gas is avoided. At the same time, since the blowing gap 910 communicates with the first port portion 211, the protective gas blown out from the first port portion 211 can be sprayed onto the blowing gap 910, thereby avoiding the continuous diffusion of the corrosive gas in the process chamber 700 in the direction approaching the driving device 300. That is, the protective gas in the blowing gap 910 has a blocking effect on the corrosive gas that is likely to diffuse into the second assembly gap 930, and further realizes the protection of the driving device 300.

[0034] Optionally, the second assembly gap 930 may communicate with the blowing gap 910 formed between the support tray 420 and the process door 200. Thereby, after the protective gas enters the intake passage 210, it is blown out from the first port portion 211. The protective gas is first blown into the second assembly gap 930, and then blown from the second assembly gap 930 into the blowing gap 910. That is, in the process from when the protective gas enters the process chamber 700 from the protective gas pipeline 500, it has a clear gas path, which is advantageous for the protective gas to exert a more stable protective effect on the driving device 300.

[0035] At the same time, in the design and assembly process, the second assembly gap 930 and the blowing gap 910 can be reduced. Thereby, when the first port portion 211 has a certain blowing amount, it is advantageous to realize that the protective gas forms a gas seal for the driving device 300 by passing through the second assembly gap 930 and the blowing gap 910, and further improve the protective effect of the protective gas on the driving device 300. In addition, the first port portion 211 communicates with the second assembly gap 930, which is advantageous for the protective gas to form gas separation at a closer position, and is advantageous for improving the protection effect.

[0036] The specific types of semiconductor process equipment disclosed in the embodiments of the present application are diverse. Optionally, the semiconductor process equipment disclosed in the embodiments of the present application may be a vertical furnace. Of course, the semiconductor process equipment disclosed in the embodiments of the present application may also be other specific types of devices. The semiconductor process equipment further includes a fixed frame 1000, and the cavity 100 is fixed to the fixed frame 1000. Thereby, the fixed frame 1000 can play a role of fixing and supporting the cavity 100 and is used to ensure the stability of the cavity 100 during operation.

[0037] In addition, in this specification, the term "comprising", "including" or any other variation thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device of a series of elements includes not only those elements but also other elements not expressly listed or elements inherent to such process, method, article or device. Without more limitations, the element limited by the phrase "comprising one..." does not exclude the existence of other same elements in the process, method, article or device comprising the element.

[0038] The above has described the embodiments of the present application with reference to the drawings. However, the present application is not limited to the above specific embodiments. The above specific embodiments are merely illustrative and not restrictive. Those skilled in the art can take more forms without departing from the gist of the present application and the protection scope of the claims according to the suggestions of the present application, and all of them belong to the protection scope of the present application.

Description of Reference Numerals

[0039] 100 Cavity 110 Cavity Body 111 Opening 120 Flange 121 Communication Passage 130 Cavity Seal Surface 200 Process Door 210 Intake Passage 211 First port part 212 Second port part 213 Annular counterbore groove 214 Intake passage body 300 Driving device 400 Wafer boat support part 410 Rotation axis 420 Support tray 500 Protection gas pipeline 610 First heating device 620 Second heating device 700 Process chamber 800 Seal assembly 810 First seal ring 820 Second seal ring 910 Blowout gap 920 First assembly gap 930 Second assembly gap 1000 Fixed frame

Claims

1. It includes a cavity, a process door, a driving device, a wafer boat support, a protective gas pipeline, and a first heating device, The driving device is provided on the process door and connected to the wafer boat support arranged in the process chamber, and is used to rotationally drive the wafer boat support. The protective gas pipeline is provided in the cavity and is used to introduce a protective gas that separates the process gas and the driving device. The process door is movably connected to the opening of the cavity. The process door is used to close or open the opening, and when the opening is closed, it forms a surrounding of the cavity and the process chamber. An intake passage is provided in the process door. The first port part of the intake passage is adjacent to the driving device and is used to transport the protective gas. When the process door closes the opening, the second port part of the intake passage is butted against the protective gas pipeline. The first heating device is connected to the part of the protective gas pipeline exposed from the cavity and is used to heat the protective gas pipeline. A semiconductor process device characterized by the above.

2. The cavity includes a cavity body and a flange. The opening is formed in the cavity body. The flange is connected to the cavity body and is provided surrounding the opening. The flange protrudes in a direction opposite to the central axis of the opening. The protective gas pipeline is provided on the flange. The protective gas pipeline penetrates the flange, and the exhaust end of the protective gas pipeline is located on the butting surface butted against the second port part of the flange, or A communication passage is formed in the flange. The protective gas pipeline is connected to the flange and communicates with the intake end of the communication passage. The exhaust end of the communication passage is located on the butting surface butted against the second port part of the flange. The semiconductor process device according to Claim 1, characterized by the above.

3. The end surface where the opening of the cavity body is located is flush with the butting surface of the flange, forming a cavity seal surface. A seal assembly is provided between the cavity seal surface and the corresponding surface of the process door. The process door is seal-engaged with the cavity seal surface through the seal assembly. The semiconductor process device according to Claim 2, characterized by the above.

4. The seal assembly includes a first seal ring and a second seal ring. The second seal ring is peripherally provided around the first seal ring. The second port portion is located between the first seal ring and the second seal ring. Both the first seal ring and the second seal ring are provided to seal between the cavity seal surface and the corresponding surface of the process door. The semiconductor process equipment according to claim 3, characterized in that.

5. The intake passage includes an intake passage main body and an annular counterbore groove. The first passage main body port portion of the intake passage main body is opened in the bottom wall of the annular counterbore groove. The second passage main body port portion of the intake passage main body is the first port portion. The notch of the annular counterbore groove is the second port portion. The process door, the flange, the first seal ring and the second seal ring form by surrounding a first assembly gap. The annular counterbore groove faces and communicates with the first assembly gap. The semiconductor process equipment according to claim 4, characterized in that.

6. There are a plurality of the intake passage main bodies. The first passage main body port portion of each intake passage main body is opened in the bottom wall of the annular counterbore groove. The second passage main body port portion of each intake passage main body is the first port portion. The semiconductor process equipment according to claim 5, characterized in that.

7. The orthographic projection in the cross section perpendicular to the central axis of the communication passage is located within the orthographic projection in the cross section of the annular counterbore groove. The communication passage communicates with the annular counterbore groove through the first assembly gap. The first dimension of the communication passage is smaller than the width of the notch of the annular counterbore groove. The first dimension is the dimension of the communication passage in the width direction of the notch. The semiconductor process equipment according to claim 5, characterized in that.

8. The semiconductor process equipment further includes a second heating device. The second heating device is provided on the outer surface of the process door opposite to the process chamber. The second heating device is used to heat the protective gas flowing through the intake passage. The semiconductor process equipment according to claim 1, characterized in that.

9. The wafer boat support portion includes a rotating shaft and a support tray. The rotating shaft is connected to the support tray, and an attachment hole is formed in the process door. The driving device is attached to the attachment hole and connected to the rotating shaft, and there is a second assembly gap between the driving device and the hole wall of the attachment hole. The first port portion is formed in the hole wall of the attachment hole and communicates with the second assembly gap. A blowing gap is formed between the rotating shaft and the process door, and the blowing gap communicates with the first port portion. The semiconductor processing equipment according to claim 1, characterized in that.

10. The semiconductor processing equipment is a vertical furnace, and the semiconductor processing equipment further includes a fixed frame, and the cavity is fixed to the fixed frame. The semiconductor processing equipment according to any one of claims 1 to 9, characterized in that.

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