Solar cell module, method for manufacturing the same, battery, and manufacturing jig

Abstract

This application provides a solar cell module, a manufacturing method thereof, a battery, and a manufacturing jig. In the process of manufacturing a conductive layer, a plurality of conductive layers partitioned by a first channel are formed on a substrate. After forming the conductive layer, by utilizing the partitioning functions of a second partitioning member and a third partitioning member respectively, each functional layer group formed on one side of the conductive layer is partitioned on both sides of the entire second partitioning member and the third partitioning member, and by utilizing the space occupied by the second partitioning member on the conductive layer, the functional layer group is brought into contact with the conductive layer through this space, realizing the series connection of different functional layer groups. Thereby, it is not necessary to perform additional laser scribing on the structure after forming, effectively solving the increase in series resistance caused by the conventional scribing being too shallow or too deep, and making the performance stability of the solar cell module more reliable.

Description

Technical Field

[0001] This application relates to the field of solar cell technology, and particularly to solar cell modules and their manufacturing methods, cells, and manufacturing jigs.

Background Art

[0002] A solar cell module refers to a device that converts light energy into electrical energy using the photovoltaic effect, and it includes a plurality of sub-cells (cells) distributed at intervals. Here, a sub-cell includes a conductive layer, a group of functional layers, and an electrode layer stacked vertically. In two adjacent sub-cells, a series connection is realized by the electrode layer of one sub-cell and the conductive layer of the other sub-cell. Here, the group of functional layers includes a first transport layer, a semiconductor layer, and a second transport layer stacked in sequence.

[0003] In the manufacturing process, generally, laser scribing is used to realize the series connection of each sub-cell in the module. For example, P1 scribing divides the conductive layer, P2 scribing divides the semiconductor layer and the upper and lower two transport layers, and at the same time allows the contact between the metal electrode layer and the conductive layer. P3 scribing realizes the division of two adjacent sub-cells.

[0004] However, when laser scribing is performed, the process is not only complex but also likely to increase the series resistance between sub-cells and reduce the device performance.

Summary of the Invention

[0005] Based on this, it is necessary to provide a solar cell module and its manufacturing method, a cell, and a manufacturing jig that simplify the manufacturing process of the cell and more reliably ensure the stability of the performance of the solar cell module.

[0006] According to a first aspect, the present application provides a method for manufacturing a solar cell module, comprising the steps of: providing a substrate; forming a conductive layer on the substrate, the conductive layer being isolated along a direction preset by a first channel; disposing a separator on a side of the conductive layer facing away from the substrate (one side surface of the conductive layer facing away from the substrate), wherein the separator includes a second partition member and a third partition member that are installed in parallel and are of an integral structure or separable; stacking and depositing a first transport layer, a semiconductor layer, and a second transport layer in sequence on at least one side of the separator along a preset direction; removing the separator and inserting a new third partition member alone, or removing the second partition member and leaving the third partition member in the separator, and depositing an electrode layer on one side of the second transport layer.

[0007] In the process of manufacturing the conductive layer in the above method for manufacturing a solar cell module, a plurality of conductive layers partitioned by a first channel are formed on the substrate. After forming the conductive layer, by utilizing the partitioning functions of the second partition member and the third partition member respectively, each functional layer group formed on one side of the conductive layer (i.e., the functional layer group includes a first transport layer, a semiconductor layer, and a second transport layer that are stacked and installed) is partitioned on both sides of the second partition member and the third partition member, and by utilizing the space occupied by the second partition member on the conductive layer, the electrode layer is brought into contact with the conductive layer through this space to realize the series connection of different sub-cells. In this way, the present application utilizes the partitioning functions of the second partition member and the third partition member to form at least two scribes on the solar cell module in their respective forming processes, so that it is not necessary to perform additional laser scribing on the formed structure, effectively solving the increase in series resistance caused by the conventional scribing being too shallow or too deep, and making the performance stability of the solar cell module more reliable.

[0008] In some embodiments, the step of forming a conductive layer isolated along a direction preset by a first channel on a substrate includes arranging a first partition member on the substrate and performing deposition on both sides along the preset direction of the first partition member, thereby forming a conductive layer isolated by the first channel. In this way, forming a conductive layer segmented by using the first partition member does not require scribing using a laser or mechanical means, which is advantageous for more reliably ensuring the stability of the performance of the module.

[0009] In some embodiments, the step of arranging a first partition member on a substrate and depositing a conductive layer on both sides along the preset direction of the first partition member includes arranging a plurality of first partition members at intervals along the preset direction on the substrate, performing sputtering on one side of the substrate facing the first partition member in a vacuum environment, removing the first partition member, leaving a first channel on the substrate, and forming a plurality of conductive layers. Designing in this way is not only advantageous for simplifying the forming process of the conductive layer, but also further ensures that the formed conductive layers are more reliably separated from each other, and avoids the need for scribing by means such as a laser or a machine.

[0010] In some embodiments, the step of arranging an isolator on one side of the conductive layer facing away from the substrate includes simultaneously arranging a second partition member and a third partition member that are both bonded to each other on one side of at least a part of the conductive layer facing away from the substrate. By designing in this way, the second partition member and the third partition member are installed on at least a part of the conductive layer to block the first transport layer, the semiconductor layer, and the second transport layer. After removing the second partition member to leave a second channel, the contact between the electrode layer and the conductive layer is made more reliable to realize a series connection, thereby making the manufacturing of the solar cell module easier.

[0011] In some embodiments, the step of simultaneously disposing, on a side of at least a part of the conductive layer facing away from the substrate, a second partition member and a third partition member that are both bonded to each other includes disposing, on each conductive layer along a preset direction, the second partition member and the third partition member simultaneously, except for the conductive layers located at both ends of the substrate, and controlling such that each second partition member is adjacent to the first side of the corresponding first channel, and the third partition member is located on a side of the second partition member facing away from the adjacent first channel. Designing in this way makes it more certain that the functional layer group in the middle part meets the formation requirements of the structure, and realizes good voltage and current output in the solar cell module.

[0012] In some embodiments, if the distance between the second partition member and the first channel installed adjacent thereto is D, then 0 μm (micrometer) < D ≤ 20 μm. Controlling the distance between the second partition member and the first channel installed adjacent thereto within an appropriate range is advantageous for obtaining an appropriate structure and making the module performance more stable.

[0013] In some embodiments, the step of simultaneously disposing, on a side of at least a part of the conductive layer facing away from the substrate, a second partition member and a third partition member that are both bonded to each other further includes disposing the second partition member on the conductive layer located at one end of the substrate and on the first side of the first channel, and controlling such that the second partition member is adjacent to the corresponding first channel, and disposing the third partition member on the conductive layer located at the other end of the substrate and on the second side of the first channel, and controlling the distance between the third partition member and the corresponding first channel, where the first side and the second side are two opposite sides. Designing in this way makes the specifications of the sub-cell at one end match the design requirements, and at the same time makes it more certain that the electrode layer and the conductive layer of the sub-cell at the other end are in contact, and makes the structure and performance of the solar cell module more stable.

[0014] In some embodiments, the step of sequentially stacking and depositing the first transport layer, the semiconductor layer, and the second transport layer along both sides in a preset direction of the overall structure of the second partition member and the third partition member includes depositing the first transport layer, the semiconductor layer, and the second transport layer in sequence on a side facing away from the substrate of the conductive layer in a vacuum environment. Designing in this way deposits the first transport layer, the semiconductor layer, and the second transport layer on a side facing away from the substrate of the conductive layer under vacuum, improving the performance of the resulting module. At the same time, the second partition member and the third partition member are used to automatically obtain the segmented semiconductor layer, eliminating the need for subsequent laser or mechanical cutting.

[0015] In some embodiments, before the step of sequentially stacking and depositing the first transport layer, the semiconductor layer, and the second transport layer along at least one side in a preset direction of the isolator, at least one of the conductive layers located at both ends along the preset direction of the substrate further includes shielding a side edge of the conductive layer that faces away from the substrate and is away from the first channel. In this way, shielding the side edges of the conductive layers at both ends that are close to one end of the substrate before depositing the functional layer group avoids the deposition of the functional layer group on the edges, thereby eliminating the need for the subsequent edge cleaning process.

[0016] In some embodiments, the second partition member and the third partition member each have a thickness of 50 μm to 200 μm along a preset direction. Appropriately controlling the thicknesses of the second partition member and the third partition member in this way is advantageous for obtaining appropriate second and third channels and avoiding the channels becoming too wide and reducing the effective operating area of the module.

[0017] In some embodiments, the semiconductor layer is a perovskite layer. Designing in this way enables the rapid and effective manufacture of perovskite solar cell modules using the manufacturing method of the present application, and is also advantageous for improving the yield of perovskite solar cell modules.

[0018] According to a second aspect, the present application provides a solar cell module manufactured using the manufacturing method of any one of the above solar cell modules.

[0019] According to a third aspect, the present application provides a battery including the above solar cell module.

[0020] According to a fourth aspect, the present application provides a manufacturing jig used in the manufacturing method of any one of the above solar cell modules. The manufacturing jig includes a first auxiliary mechanism including a plurality of first partition members provided in parallel with a space therebetween in a first cavity through a first frame body having the first cavity; a second auxiliary mechanism including a plurality of spacers provided in parallel with a space therebetween in a second cavity through a second frame body having the second cavity, each spacer being arranged so as to be located on the same side of a corresponding first partition member. Here, the spacer includes a second auxiliary mechanism including a second partition member and a third partition member arranged in parallel; and a third auxiliary mechanism including a plurality of third partition members provided in parallel with a space therebetween in a third cavity through a third frame body having the third cavity, the distribution position of the third partition member in the third cavity being the same as the distribution position of the third partition member in the second cavity.

[0021] In the process of manufacturing the conductive layer, placing the substrate in the first cavity and distributing a plurality of first partition members at intervals on the substrate makes it more certain that each conductive layer is not segmented during the forming process, avoiding the need for scribing with tools such as lasers after forming. After forming the conductive layer, placing the substrate having the conductive layer in the second cavity, distributing the isolators at intervals on one side of the conductive layer, partitioning each functional layer group formed on one side of the conductive layer on both sides of the third partition member, and the second partition member occupying the space on the conductive layer enables the functional layer group to contact the conductive layer through this space, realizing the series connection of different functional layer groups. This effectively solves the problem of increased series resistance caused by the scribing in the prior art being too shallow or too deep, making the performance stability of the solar cell module more certain.

[0022] In some embodiments, the first auxiliary mechanism further includes two first support members provided at intervals in the first cavity, and each first partition member is connected between the two first support members. In this way, installing the two first support members is beneficial for making the fixation of the first partition member more stable and improving the deposition accuracy of the conductive layer.

[0023] In some embodiments, the first partition member, the second partition member, and the third partition member are all configured in a flat structure, and the flat surface of the first partition member is parallel to the penetration direction of the first cavity, the flat surface of the second partition member is parallel to the penetration direction of the second cavity, and the flat surface of the third partition member is parallel to the penetration direction of the second cavity or the third cavity. Such a flattened design can avoid the reduction of the effective operating area of the module because their respective thicknesses reduce the space occupied in the corresponding cavities.

[0024] In some embodiments, the first support member is located in the first cavity, and a first concave groove is formed between the first support member and one end surface of the first cavity, and the first concave groove is used for receiving the substrate. Designing in this way makes it easier to fix the substrate, thereby making the deposition of the conductive layer more stable.

[0025] In some embodiments, when the second frame is stacked and installed on the first frame, in the first partition member corresponding to the separator, the second partition member is located between the first partition member and the third partition member, and the distance D between the second partition member and the corresponding first partition member is 0μm < D ≤ 20μm. By designing in this way, appropriately controlling the distribution positions among the first partition member, the second partition member, and the third partition member is beneficial for obtaining an appropriate structure and making the module performance more stable.

[0026]

[0025] In some embodiments, the second auxiliary mechanism further includes two second support members provided at intervals within the second cavity, and each second partition member is connected between the two second support members. In this way, installing the two second support members is beneficial for making the fixation of the second partition member more stable and improving the deposition accuracy of the functional layer group.

[0027] In some embodiments, the second support member is located within the second cavity, and a second concave groove is formed between the second support member and one end surface of the second cavity. The second concave groove is used for receiving a substrate having a conductive layer. Designing in this way makes it easier to fix the substrate having a conductive layer, thereby making the deposition of the functional layer group more stable.

[0028] In some embodiments, the second auxiliary mechanism further includes two shielding members connected at intervals between the two second support members. The two shielding members are located on both sides of all the separators and are respectively attached to the inner wall of the second cavity. In this way, installing the shielding members on both sides of the separator respectively is beneficial for shielding the deposition of the functional layer group at the edge, and the subsequent edge removal process required due to the deposition formed at both ends of the substrate can be avoided.

[0029] In some embodiments, the second auxiliary mechanism further includes a single second partition member and a third partition member, and the single second partition member and the third partition member are respectively located on opposite sides of all the isolators. Such a design is advantageous for the specifications of the sub-battery at one end to meet the design requirements, and at the same time makes it more certain that the electrode layer and the conductive layer of the sub-battery at the other end are in contact, making the structure and performance of the solar cell module more stable.

[0030] The above description is only an overview of the technical solution of this application. In order to understand the technical means of this application more clearly, it may be implemented according to the content of the specification. And in order to make the foregoing and other objects, features, and advantages of this application more clearly and understandably, hereinafter, specific embodiments of this application will be specifically described.

Brief Description of the Drawings

[0031] By reading the following detailed description of the preferred embodiments, various other advantages and benefits will become apparent to those skilled in the art. The drawings are only used to illustrate the purpose of the preferred embodiments and are not considered as a limitation to this application. It should be noted that the same reference numerals indicate the same members in all the drawings. In the drawings,

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Embodiments for Carrying Out the Invention

[0032] Hereinafter, embodiments of the technical solution of the present application will be described in detail in association with the drawings. The following embodiments are only for illustrating the technical solution of the present application more clearly, and thus are only examples and should not limit the protection scope of the present application.

[0033] Unless otherwise defined, all technical and scientific terms used in this specification have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terms used in this specification are only for the purpose of describing specific embodiments and are not intended to limit this application. The terms "comprising" and "having" and any variations thereof in the description of the specification, claims, and drawings of this application are intended to inclusively include the non-exclusive "comprising".

[0034] In the description of the embodiments of this application, technical terms such as "first" and "second" are only used to distinguish different objects and should not be understood as indicating or suggesting relative importance, or implicitly specifying the number of technical features indicated, a specific order, or a primary-secondary relationship. In the description of the embodiments of this application, unless specifically limited otherwise, "a plurality" means two or more.

[0035] As used herein, the term "embodiment" means that the specific features, structures, or characteristics described in connection with the embodiment may be included in at least one embodiment of this application. The appearance of this phrase at each position in the specification does not necessarily refer to the same embodiment, nor does it refer to independent or alternative embodiments mutually exclusive with other embodiments. One of ordinary skill in the art can explicitly and implicitly understand that the embodiments described in this specification can be combined with other embodiments.

[0036] In the description of the embodiments of this application, the term "and / or" only indicates the relevant relationship for describing the relevant objects, and it represents that three relationships may exist. For example, A and / or B may represent three cases: A alone, the combination of A and B, and B alone. Also, the character " / " in this specification generally represents that the relevant objects before and after are in an "or" relationship.

[0037] In the description of the embodiments of the present application, the term "plurality" refers to two or more (including two), similarly, "a plurality of sets" refers to two sets or more (including two sets), and "a plurality of sheets" refers to two sheets or more (including two sheets).

[0038] In the description of the embodiments of the present application, the orientation or positional relationship indicated by technical terms such as "center", "longitudinal direction", "lateral direction", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial direction", "radial direction", "circumferential direction", etc. is the orientation or positional relationship shown based on the drawings, and is only for facilitating the description of the embodiments of the present application and simplifying the description, and does not expressly or implicitly imply that the mentioned device or element must have a specific orientation and be configured and operated in a specific orientation. Therefore, it should not be understood as a limitation to the embodiments of the present application.

[0039] In the description of the embodiments of the present application, unless otherwise specifically defined and limited, terms such as "attachment", "connection", "connection", "fixation", etc., which are technical terms, should be understood in a broad sense. For example, it may be a fixed connection, a removable connection, or an integral one, a mechanical connection, an electrical connection, a direct connection, an indirect connection through an intermediate medium, or a communication inside two elements or an interaction relationship between two elements. Those skilled in the art may understand the specific meaning of the above terms in the embodiments of the present application according to specific situations.

[0040] With the development of science, the development of new energy has continued to make great leaps. For example, solar cells represented by perovskite and organic thin-film batteries have achieved epoch-making progress. Since this type of solar cell has advantages such as high efficiency and low cost, it is expected to replace silicon-based solar cells.

[0041] For a solar cell module, in order to obtain an appropriate voltage and current output, scribing is generally performed by a laser or mechanical scribing method to achieve the division and series connection of sub-cells. For example, a conductive layer is deposited on a substrate, and the first scribing is performed by a laser or mechanical scribing method to complete the division of the sub-cells. Next, a first transport layer, a semiconductor layer, and a second transport layer are deposited, and then the second scribing is performed by a laser or mechanical scribing method to complete the scribing of the series connection channels of the sub-cells. Finally, a top electrode film layer is deposited, and the third scribing is performed by a laser or mechanical scribing method to complete the division of the electrodes.

[0042] The applicant has noticed that when performing the second scribing, if the scribing energy is too small, the two transport layers and the semiconductor layer cannot be scribed and cut, and the transport layer or the semiconductor layer is likely to remain, so that the electrode layer cannot be in direct contact with the conductive layer. For example, it contacts with SnO2 in the transport layer, greatly increasing the contact resistance and seriously affecting the performance of the module. If the scribing energy is too large, the conductive layer is likely to be scribed, which similarly causes an increase in the series resistance between sub-cells and degrades the performance of the module.

[0043] Based on this, in order to solve the problem that the conventional scribing such as laser or mechanical scribing is likely to increase the series resistance between sub-cells and degrade the performance of the solar cell module, the applicant has intensively studied and designed a manufacturing method of the solar cell module, using the shielding of the second partition member and the third partition member to form the first transport layer, the semiconductor layer, and the second transport layer located on both sides of the second partition member and the third partition member on the side opposite to the substrate of the conductive layer. Next, the second partition member is removed, and using the shielding of the old or new third partition member, an electrode layer cut on one side of the second transport layer side is formed.

[0044] The manufacturing method of the above solar cell module, in the process of manufacturing the conductive layer, a plurality of conductive layers partitioned by a first channel are formed on a substrate. After forming the conductive layer, by utilizing the partitioning functions of a second partitioning member and a third partitioning member respectively, each functional layer group formed on one side of the conductive layer is partitioned on both sides of the second partitioning member and the third partitioning member. Next, the second partitioning member is taken out, and by utilizing the space occupied by the second partitioning member on the conductive layer, the electrode layer is brought into contact with the conductive layer through this space, realizing the series connection of different sub-cells. In this way, the present application utilizes the partitioning functions of the first partitioning member, the second partitioning member, and the third partitioning member to perform the three scribes in the solar cell module in their respective forming processes, so there is no need to perform additional laser scribing on the formed structure, effectively solving the increase in series resistance caused by the conventional scribing being too shallow or too deep, and making the performance stability of the solar cell module more reliable.

[0045] It should be noted that in the deposition process, for example, sputtering, evaporation processes, etc., in consideration of the adhesiveness of the materials of each layer, pretreatment can be performed on the second partitioning member and the third partitioning member respectively to make the second partitioning member and the third partitioning member detach from the deposited layer structure better. For example, impurities such as oil stains and dust on the second partitioning member and the third partitioning member can be cleaned, or a release agent, etc. can be applied to the second partitioning member and the third partitioning member.

[0046] The solar cell module disclosed in the present application may be, but is not limited to, a perovskite battery module, an organic thin-film battery module, etc. Of course, it may also be a silicon-based battery module, etc. At the same time, the battery disclosed in the present application can be used in power-consuming devices such as vehicles, ships, or aircraft, but is not limited thereto. The power supply system of the power-consuming device can be configured using the battery, etc. disclosed in the present application.

[0047] Embodiments of the present application provide a power consumption device that uses a battery as a power source. The power consumption device may be, but is not limited to, a mobile phone, a tablet, a notebook computer, an electric toy, an electric tool, a battery vehicle, an electric vehicle, a steamship, a spacecraft, a space station, etc. Here, the electric toy may include a fixed or mobile electric toy, for example, a game console, an electric vehicle toy, an electric boat toy, an electric airplane toy, etc.

[0048] According to some embodiments of the present application, referring to FIGS. 1 and 2, the present application provides a method for manufacturing a solar cell module 100. This manufacturing method includes: In S100, providing a substrate 10; In S200, forming a conductive layer 20 on the substrate 10, which is isolated along a preset direction X by a first channel 21; In S300, arranging a separator 222 on a side of the conductive layer 20 facing away from the substrate 10. Here, the separator 222 includes a second partition member 22a and a third partition member 22b that are installed in parallel and have an integral structure or are separable; In S400, sequentially stacking and depositing a first transport layer 31, a semiconductor layer 32, and a second transport layer 33 on at least one side of the separator 222 along the preset direction X; In S500, removing the separator 222 and inserting a new third partition member 22b alone, or removing the second partition member 22a and leaving the third partition member 22b in the separator 222, and depositing an electrode layer 34 on one side of the second transport layer 33.

[0049] The substrate 10 is also called a base or a substrate. The material of the substrate 10 may be, but is not limited to, glass, tempered glass, quartz, an organic flexible material, etc. Of course, it may also be a transparent conductive glass, a stainless steel conductive flexible substrate, a polyethylene terephthalate (PET) conductive flexible substrate, etc.

[0050] In step S200, referring to FIGS. 3 and 4 in the forming process of the conductive layer 20, the formed conductive layers 20 are all segmented by being partitioned by the first channel 21. The first channel 21 refers to a structure that forms a space for partitioning the conductive layers 20, and it can be extended and installed along a direction perpendicular to the preset direction X on the substrate 10. There are multiple types of cross-sectional shapes of the first channel 21. For example, the cross-sectional shape of the first channel 21 may be a semi-circular shape, a semi-elliptical shape, a square shape, etc., but it is not limited thereto.

[0051] There are multiple types of forming methods for the first channel 21. For example, the first channel 21 may be formed by scribing on the substrate 10 using a laser or a machine, etc., that is, when partitioning the conductive layer 20, scribing may be performed using means such as a laser or a machine. Or, a partitioning structure may be pre-arranged on the substrate 10, and in the forming process of the conductive layer 20, a groove-like structure, etc., may be left on the substrate 10 by shielding with the partitioning structure.

[0052] The second partitioning member 22a and the third partitioning member 22b respectively refer to members having a certain structural strength, corresponding to a partitioning plate structure in the forming process of the electrode layer 34 or the functional layer group 30, and the electrode layer 34 or the functional layer group 30 in the forming process is blocked by the corresponding partitioning member.

[0053] The thicknesses of the second partition member 22a and the third partition member 22b should be as thin as possible. If the thickness of each is too large, the gap between the electrode layer 34 and the functional layer group 30 will become too large, resulting in a reduction in the effective operating area of the solar cell module 100, thereby affecting the performance of the device. Therefore, both the second partition member 22a and the third partition member 22b generally exhibit a plate-like or sheet-like structure as a whole. In the manufacturing process, referring to FIGS. 2 and 5, when the second partition member 22a is taken out, a second channel 35 is formed in the semiconductor layer 32, and when the third partition member 22b is taken out, a third channel 36 is formed in the functional layer group 30. Here, the second channel 35 can be utilized as a space for forming the subsequent contact between the electrode layer 34 and the conductive layer 20.

[0054] The second partition member 22a and the third partition member 22b in the spacer 222 may be designed as an integral structure, that is, the second partition member 22a and the third partition member 22b may be designed to have a non-separable structure or, of course, a separable structure. For example, both of them can be fixed to the same structure in a locking manner or the like. When the second partition member 22a and the third partition member 22b are designed as an integral structure, the second partition member 22a and the third partition member 22b are fixedly connected and can be, for example, in an adhesive or integral molding manner, where the integral molding may be injection molding, die casting, extrusion, or the like. Also, when the second partition member 22a and the third partition member 22b are designed as an integral structure, the second partition member 22a and the third partition member 22b can be regarded as an integral structure.

[0055] When the spacer 222 is disposed on the conductive layer 20, the second partition member 22a and the third partition member 22b are arranged and distributed side by side along a preset direction X.

[0056] The conductive layer 20 may be a transparent conductive oxide (abbreviated as TCO) thin film. In the visible light range (the energy corresponding to a wavelength of 380 (nanometers) nm to 760 nm is 3.26 eV (electron volts) to 1.63 eV), it has an average transmittance of about 80% or more, and has high conductivity and a resistivity lower than 1×10 -3 Ω·cm (ohm·centimeter). There are various options for its material, for example, indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), aluminum doped zinc oxide (AZO), etc., but it is not limited to these.

[0057] The functional layer group 30 refers to the core structure in the solar cell module 100 and is a member capable of converting the absorbed light energy into electrical energy. It includes a first transport layer 31, a semiconductor layer 32, and a second transport layer 33. Here, the first transport layer 31 and the second transport layer 33 refer to a layer structure laminated on both sides of the semiconductor, mainly playing the role of transporting electrons or holes. The first transport layer 31 may be an electron transport layer, and the second transport layer 33 is a hole transport layer. In this case, this solar cell module 100 is of the nip type (basic structure), or the first transport layer 31 may be a hole transport layer, and the second transport layer 33 is an electron transport layer. In this case, this solar cell module 100 is of the pin type (transformer structure). In addition to the function of transporting electrons, the electron transport layer can also play the role of blocking holes. There are various options for its material, for example, TiO2, ZnO, SnO2, or organic materials, etc. In addition to transporting holes, the hole transport layer can also block the action of electrons. Its material may be spiro-OMeTAD, PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]), NiO X etc., but it is not limited to these.

[0058] The semiconductor layer 32 refers to a structure that can absorb light and excite electron / hole pairs, such as a perovskite layer, a silicon wafer layer, etc. The electrode layer 34 is also called a metal electrode layer 34, a back cathode, etc., and its material may be, but is not limited to, Ag, Au, Pt, Cu, etc.

[0059] It should be noted that the sub-cell (cell) referred to in this application may be understood as a structure in which the conductive layer 20, the first transport layer 31, the semiconductor layer 32, the second transport layer 33, and the electrode layer 34 are vertically stacked, and of course, it may also be understood as a combined structure of the functional layer group 30 and the electrode layer 34.

[0060] When referring to taking out the second partition member 22a, it means taking out the second partition member 22a after depositing the first transport layer 31, the semiconductor layer 32, and the second transport layer 33, which corresponds to the conventional second scribing process, and a second channel 35 is formed between the first transport layer 31, the semiconductor layer 32, and the second transport layer 33. Then, when depositing the electrode layer 34, a part of the electrode layer 34 is formed in the second channel 35 to realize contact with the conductive layer 20.

[0061] Referring to FIG. 8, taking out the spacer 222 and inserting a new third partition member 22b alone, or taking out the second partition member 22a and holding the third partition member 22b in the spacer 222 refers to two different operations. Holding the third partition member 22b means keeping the original third partition member 22b in place without moving it. At this time, the second partition member 22a and the third partition member 22b are separable. Inserting a new third partition member 22b means taking out the second partition member 22a and the third partition member 22b at the same time, and then placing the new third partition member 22b at the corresponding position. Referring to FIG. 9, in that case, the second partition member 22a is interconnected with the old third partition member 22b and can be regarded as an integral structure, which can be seen in FIG. 5.

[0062] The second partition member 22a and the third partition member 22b both perform a partitioning function during the molding process of the solar cell module 100. For example, the second partition member 22a and the third partition member 22b partition the first transport layer 31, the semiconductor layer 32, and the second transport layer 33 together. After removing the second partition member 22a, a second channel 35 is formed on one side of the conductive layer 20, and the subsequent electrode layer 34 is brought into contact with the conductive layer 20 using the second channel 35.

[0063] By utilizing the partitioning functions of the second partition member 22a and the third partition member 22b to form at least two scribes on the solar cell module 100 during their respective molding processes, there is no need to perform additional laser scribing on the molded structure, effectively solving the increase in series resistance caused by the conventional scribes being too shallow or too deep, and making the performance stability of the solar cell module 100 more reliable.

[0064] According to some embodiments of the present application, step S200 includes placing the first partition member 212 on the substrate 10 and performing depositions on both sides along the preset direction X of the first partition member 212, thereby forming a conductive layer 20 isolated by the first channel 21.

[0065] By placing the first partition member 212 on the substrate 10, a portion of the area on the substrate 10 is shielded by the first partition member 212. As a result, a conductive layer 20 cannot be formed by deposition on this portion of the area. Further, a plurality of conductive layers 20 formed on the substrate 10 are formed at intervals along the preset direction X.

[0066] The temperature during the molding process of the conductive layer 20 is higher than that in other molding processes. Therefore, it should be noted that when selecting the material for the first partition member 212, a material that can withstand a certain temperature should be selected. It is, for example, a plastic such as polyphenylene sulfide (abbreviated as PPS). Of course, a metal material may also be used.

[0067] Forming the conductive layer 20 segmented using the first partition member 212 does not require scribing using a laser or mechanical means, which is advantageous for more reliably ensuring the stability of the performance of the module.

[0068] According to some embodiments of the present application, referring to FIG. 6, the step of disposing the first partition member 212 on the substrate 10 and performing deposition on both sides along the preset direction X of the first partition member 212, thereby forming the conductive layer 20 isolated by the first channel 21, includes: In S210, the step of disposing a plurality of first partition members 212 at intervals along the preset direction X on the substrate 10; In S220, the step of sputtering on one side of the substrate 10 facing the first partition member 212 in a vacuum environment; In S230, the step of removing the first partition member 212 and leaving the first channel 21 on the substrate 10 to form a plurality of conductive layers 20.

[0069] As can be seen from this, in the process of forming the conductive layer 20, a plurality of first partition members 212 are disposed along the preset direction X on the substrate 10, and the substrate 10 is not sputtered at the position of the first partition member 212 to form the conductive layer 20. Thus, the formed conductive layers 20 are segmented, which can be specifically referred to in FIG. 4.

[0070] There are multiple ways to dispose the first partition member 212 on the substrate 10. For example, a plurality of first partition members 212 are directly placed and fixed on the surface of the substrate 10, or a plurality of first partition members 212 are pre-fixed by a frame to form a mold structure, and then this mold is fitted onto the substrate 10.

[0071] When a plurality of first partition members 212 are arranged at intervals, it is possible to more reliably ensure that the intervals between two adjacent first partition members 212 are the same, and thereby the sizes of the conductive layers 20 formed can also be made the same.

[0072] The sputtering of the conductive layer 20 refers to magnetron sputtering technology. For example, in the process where electrons are accelerated by the action of an electric field and fly towards the substrate 10, they collide with argon atoms, ionize a large number of argon ions and electrons, and the electrons fly towards the substrate 10. The argon ions are accelerated under the action of the electric field and impact the target, sputtering a large number of target atoms, and depositing neutral target atoms (or molecules) on the substrate 10 to form a film. Here, in the sputtering process, the vacuum environment means maintaining the degree of vacuum in the operating environment at a certain value when sputtering and depositing the conductive layer 20. For example, the degree of vacuum in the vacuum environment may be 10-3 (pascal) Pa to 10-4 Pa, etc., but is not limited thereto.

[0073] Designing in this way is not only advantageous for simplifying the forming process of the conductive layer 20, but also more reliably ensures that the formed conductive layers 20 are separated from each other, avoiding the need to scribe by means such as a laser or a machine.

[0074] According to some embodiments of the present application, referring to FIG. 7, in S300, the step of arranging the second partition member 22a and the third partition member 22b installed in parallel on one side of the conductive layer 20 facing away from the substrate 10 is In S310, it includes simultaneously arranging the second partition member 22a and the third partition member 22b that are all bonded to each other on one side of at least a part of the conductive layer 20 facing away from the substrate 10.

[0075] Placing the second partition member 22a and the third partition member 22b simultaneously on at least a part of the conductive layer 20 means that in the manufacturing process of the first transport layer 31, the semiconductor layer 32, and the second transport layer 33, when the second partition member 22a is placed on a part of the conductive layer 20, the third partition member 22b is also placed. It should be understood that only the second partition member 22a or the third partition member 22b may be placed on a part of the conductive layer 20, or the second partition member 22a and the third partition member 22b etc. may be placed simultaneously on all the conductive layers 20.

[0076] There are multiple deposition methods for the first transport layer 31, the semiconductor layer 32, and the second transport layer 33, such as vapor deposition, sputtering, vapor transport method, proximity space sublimation method, etc. Here, vapor deposition is a process method in which, under vacuum conditions, a plating material (or called a film material) is evaporated and vaporized using a certain heating evaporation method, and particles fly onto the surface of the substrate and aggregate to form a film. Since it operates under vacuum conditions, the influence of water and oxygen on the module performance can be avoided. Here, the vacuum environment in the vapor deposition process refers to maintaining the vacuum degree of the operating environment at a certain value during vapor deposition, for example, the vacuum degree of the vacuum environment may be -3 10 Pa or less, etc., but not limited thereto.

[0077] Designing in this way is to install the second partition member 22a and the third partition member 22b on at least a part of the conductive layer 20, block the first transport layer 31, the semiconductor layer 32, and the second transport layer 33, take out the second partition member 22a to leave the second channel 35, make the contact between the electrode layer 34 and the conductive layer 20 more reliable to realize series connection, and thereby make the manufacturing of the solar cell module 100 easier.

[0078] According to some embodiments of the present application, referring to FIG. 10, in S310, the step of simultaneously placing the second partition member 22a and the third partition member 22b, which are both bonded to each other, on one side of at least a part of the conductive layer 20 facing away from the substrate 10 is In S311, in addition to the conductive layers 20 located at both ends of the substrate 10, second partition members 22a and third partition members 22b are simultaneously arranged on each of the conductive layers 20 along a preset direction X, and each second partition member 22a is adjacent to the first side of the corresponding first channel 21, and the third partition member 22b is controlled to be located on the side of the second partition member 22a adjacent to the first channel 21 and facing away from it.

[0079] In step S311, second partition members 22a and third partition members 22b are simultaneously arranged on the conductive layers 20 located in the middle part, the formed functional layer group 30 is segmented, and each electrode layer 34 can be more surely in contact with the corresponding conductive layer 20, which can specifically be referred to in FIG. 2.

[0080] That each second partition member 22a is adjacent to the first side of the location of the first channel 21 can be understood as that each second partition member 22a is installed close to the location of the first channel 21 and is located on the same side of the first channel 21. As an example, each second partition member 22a is arranged adjacent to the right side of the first channel 21, or each second partition member 22a is arranged adjacent to the left side of the first channel 21.

[0081] The positional relationship between the second partition member 22a and the third partition member 22b may be bonded to each other, or may have a certain gap or the like between them. Here, bonding to each other should be understood as that the third partition member 22b is provided by being bonded to the side surface of the second partition member 22a adjacent to it and facing away from it.

[0082] Designing in this way makes it more certain that the functional layer group 30 in the middle part meets the formation requirements of the structure, and the solar cell module 100 can have good voltage and current output.

[0083] According to some embodiments of the present application, when the distance between the first channel 21 installed adjacent to the second partition member 22a is D, 0 μm < D ≤ 20 μm.

[0084] The smaller the distance between the first channel 21 installed adjacent to the second partition member 22a, the better. When the distance D between the two is 0, one side of the formed semiconductor layer 32 is on the same plane as one side of the adjacent conductive layer 20. However, the requirement for fitting accuracy is high and it is difficult to operate. If the distance D is too large, the space occupied by the functional layer group 30 on the other conductive layer 20 will become too large.

[0085] The value of the distance D may be a value between 0 μm and 20 μm. For example, the distance D may be 1 μm, 5 μm, 10 μm, 15 μm, 20 μm, etc., but is not limited thereto.

[0086] Controlling the distance between the first channel 21 installed adjacent to the second partition member 22a within an appropriate range is beneficial for obtaining an appropriate structure and making the module performance more stable.

[0087] According to some embodiments of the present application, continuing to refer to FIG. 10, in S310, the step of simultaneously arranging the second partition member 22a and the third partition member 22b, which are both adhered to each other, on the side of at least a part of the conductive layer 20 facing away from the substrate 10 is In S312, arranging the second partition member 22a on the conductive layer 20 located at one end of the substrate 10 and on the first side of the first channel 21, and controlling the second partition member 22a to be adjacent to the corresponding first channel 21; In S313, further including the step of arranging the third partition member 22b on the conductive layer 20 located at the other end of the substrate 10 and on the second side of the first channel 21, and controlling the distance between the third partition member 22b and the location of the corresponding first channel 21, where the first side and the second side are two opposite sides.

[0088] In steps S312 and S313, only the second partition member 22a is disposed on a part of the conductive layer 20 located at both ends, only the third partition member 22b is disposed on another part, and both the second partition member 22a and the third partition member 22b are simultaneously disposed on the remaining conductive layer 20. By designing in this way, sub-cells with the same specifications can be further partitioned on the conductive layer 20 at one end, the semiconductor layer 32 on the conductive layer 20 at the other end is blocked, and the electrode layer 34 can be brought into contact with the conductive layer 20, which can be referred to in FIG. 11.

[0089] For ease of understanding, 10 sub-cells are exemplified and described, but it should be noted that this does not limit the scope of the solution of this application. When manufacturing the conductive layer 20, 10 first partition members 212 are sequentially arranged on the substrate 10 from left to right at intervals, and at least the width of one sub-cell is left between the left edge and the first first partition member 212, for example, 1.6 cm is left. This can be referred to in FIG. 12. After the conductive layer 20 is formed, the second partition member 22a and the third partition member 22b are arranged adjacent to each other in sequence on the right side of the location of the first partition member 212, and only the second partition member 22a is arranged on the right side where the last first partition member 212 is located. Only the third partition member 22b is arranged on the conductive layer 20 close to the left side, and the distance between the third partition member 22b and the adjacent second partition member 22a is the width of one sub-cell, which is, for example, 0.6 cm, etc., and this can be referred to in FIG. 13. After the arrangement is completed, the first transport layer 31, the semiconductor layer 32 (such as a perovskite layer, etc.) and the second transport layer 33 are sequentially deposited (such as by evaporation, etc.). After the deposition is completed, the second partition member 22a is taken out, the third partition member 22b is retained or updated, and then the electrode layer 34 is deposited on one side of the second transport layer 33 to form a plurality of functional layer groups 30. This can be referred to in FIG. 14. Finally, the third partition member 22b is taken out.

[0090] Designing in this way makes the specifications of the sub-battery at one end match the design requirements, and at the same time makes it more certain that the electrode layer 34 of the sub-battery at the other end contacts the conductive layer 20, making the structure and performance of the solar cell module 100 more stable.

[0091] According to some embodiments of the present application, referring to FIG. 7, in S400, the step of sequentially stacking and depositing the first transport layer 31, the semiconductor layer 32, and the second transport layer 33 on at least one side along the preset direction X of the separator 222 is In S410, in a vacuum environment, it includes sequentially depositing the first transport layer 31, the semiconductor layer 32, and the second transport layer 33 on the side of the conductive layer 20 facing away from the substrate 10.

[0092] Depositing the first transport layer 31, the semiconductor layer 32, and the second transport layer 33 in a vacuum environment is advantageous for avoiding the influence of water and oxygen on the module performance. Also, there are multiple deposition methods, such as evaporation, sputtering, vapor transport method, proximity space sublimation method, etc.

[0093] In this way, depositing the first transport layer 31, the semiconductor layer 32, and the second transport layer 33 on the side of the conductive layer 20 facing away from the substrate 10 under vacuum makes the performance of the obtained module better. At the same time, by using the second partition member 22a and the third partition member 22b, the semiconductor layer 32 divided thereby can be automatically obtained, without the need for subsequent laser or mechanical cutting.

[0094] According to some embodiments of the present application, referring to FIG. 15, before the step of sequentially stacking and depositing the first transport layer 31, the semiconductor layer 32, and the second transport layer 33 on at least one side along the preset direction X of the separator 222 in S300, In S600, it further includes shielding the side edges of at least one of the conductive layers 20 located at both ends of the substrate 10 along the preset direction X, which face away from the substrate 10 of the conductive layer 20 and are away from the position where the first partition member 212 is located.

[0095] The execution order of step S600 and step S300 does not necessarily need to be specifically required. For example, in the manufacturing process, step S300 may be executed first, and then step S600 may be executed, or step S600 may be executed first, and then step S300 may be executed. Furthermore, step S300 and step S600 may be executed synchronously, such as integrating the shielding structure, the second partition member 22a, and the third partition member 22b in the same mold.

[0096] After a portion of the substrate 10 near one end of one side of the conductive layer 20 is shielded, an extra functional layer group 30 cannot be deposited on this portion, and there is no need to perform the subsequent edge removal process. Specifically, in some embodiments, after the conductive layer 20 is formed, two shielding members 224 are respectively disposed on the conductive layer 20 located at both ends of the substrate 10, and the shielding members 224 are respectively installed close to both ends of the substrate 10.

[0097] Before depositing the functional layer group 30, shield the sides of the conductive layers 20 at both ends that are close to one end of the substrate 10 to avoid depositing the functional layer group 30 on the edges, thereby avoiding the process of having to clean the subsequent edges.

[0098] According to some embodiments of the present application, the thicknesses of the second partition member 22a and the third partition member 22b are both 50 μm to 200 μm along a preset direction X respectively.

[0099] The thicknesses of the second partition member 22a and the third partition member 22b may each be a value of 50 μm to 200 μm. For example, the thicknesses of the first partition member 212, the second partition member 22a, and the third partition member 22b may be 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, 150 μm, 200 μm, etc., but are not limited thereto. Of course, the thickness of the first partition member 212 may also be 50 μm to 200 μm.

[0100] Properly controlling the thicknesses of the second partition member 22a and the third partition member 22b is advantageous for obtaining appropriate first channel 21, second channel 35, and third channel 36, and avoiding the channels being too wide and reducing the effective operating area of the module.

[0101] According to some embodiments of the present application, the semiconductor layer 32 is a perovskite layer.

[0102] The perovskite layer refers to a layer structure having a perovskite material. Here, the perovskite material is a material having the same crystal structure as calcium titanate (CaTiO3), and half of its structural formula is ABX3, where A and B are two types of cations, and X is an anion.

[0103] Thus, using the manufacturing method of the present application can quickly and effectively manufacture a perovskite battery module, and at the same time is advantageous for improving the yield of the perovskite battery module.

[0104] According to some embodiments of the present application, referring to FIG. 2, the present application provides a solar cell module 100 manufactured using the manufacturing method of the solar cell module 100 in any of the above solutions.

[0105] According to some embodiments of the present application, the present application provides a battery including the solar cell module 100 of the above solution.

[0106] According to some embodiments of the present application, referring to FIGS. 3, 5, and 9, the present application provides a manufacturing jig 200 used in the manufacturing method of the solar cell module 100 in any of the above solutions. The manufacturing jig 200 includes a first auxiliary mechanism 210, a second auxiliary mechanism 220, and a third auxiliary mechanism 230. The first auxiliary mechanism 210 includes a plurality of first partition members 212 that penetrate through a first frame body 214 having a first cavity 211 and are provided in parallel at intervals in the first cavity 211. The second auxiliary mechanism 220 includes a plurality of spacers 222 that penetrate through a second frame body 225 having a second cavity 221 and are provided in parallel at intervals in the second cavity 221. Each spacer 222 is arranged so as to be located on the same side of the corresponding first partition member 212. Here, the spacer 222 includes a second partition member 22a and a third partition member 22b that are arranged in parallel. The third auxiliary mechanism 230 includes a plurality of third partition members 22b that penetrate through a third frame body 232 having a third cavity 231 and are provided in parallel at intervals in the third cavity 231. The distribution position of the third partition member 22b in the third cavity 231 coincides with the distribution position of the third partition member 22b in the second cavity 221.

[0107] The first cavity 211 can fix a plurality of first partition members 212 and deposit materials on the substrate 10. That is, the first cavity 211 is installed through the first frame body 214. The plurality of first partition members 212 can divide the first cavity 211 into a plurality of first gaps 215 at intervals in parallel within the first frame body 214. The first gaps 215 can deposit materials on the substrate 10 to form the conductive layer 20.

[0108] The second cavity 221 can fix a plurality of second partition members 22a and third partition members 22b, and can deposit materials on the conductive layer 20. Similarly, the second cavity 221 is installed to penetrate the second frame 225. The plurality of second partition members 22a and third partition members 22b are all arranged in parallel and spaced apart within the second frame 225, and the second cavity 221 can be divided into a plurality of second gaps 226. The second gaps 226 can deposit materials on the conductive layer 20 to sequentially form the first transport layer 31, the semiconductor layer 32, and the second transport layer 33. In some embodiments, the size of the second cavity 221 needs to be the same as the size of the first cavity 211. In this way, in the manufacture of the solar cell module 100, the operation spaces of the front and rear deposition processes being the same is advantageous for more reliably ensuring the structural accuracy of the module.

[0109] The isolators 222 are all arranged to be located on the same side as the corresponding first partition member 212. That is, each isolator 222 can be adjusted to be located on one side of the first partition member 212. As a result, the obtained second channel 35 or third channel 36 is all held on one side of the first channel 21, and the obtained sub-cells are connected in series in sequence.

[0110] In the second auxiliary mechanism 220, the second partition member 22a and the third partition member 22b may be designed to have a separated structure. That is, the second partition member 22a is taken out from within the second frame 225, and only the third partition member 22b remains. As a result, when manufacturing the subsequent electrode layer 34, it is not necessary to additionally use the third auxiliary mechanism 230. At the same time, the second partition member 22a and the third partition member 22b may be adhesively attached and installed, or may maintain a certain gap, etc. Of course, in the second auxiliary mechanism 220, the second partition member 22a and the third partition member 22b may also be designed with an integrated structure.

[0111] The third auxiliary mechanism 230 includes a plurality of third partition members 22b, and the distribution positions of the third partition members 22b in the third cavity 231 coincide with the distribution positions of the third partition members 22b in the second cavity 221 of the third partition members 22b. Thereby, after the deposition of the semiconductor layer 32 and the transport layer is completed, when working using the third auxiliary mechanism 230, the third partition members 22b in the third auxiliary mechanism 230 may be held at the original positions of the third partition members 22b in the second auxiliary mechanism 220, so that no displacement occurs in the deposition of the electrode layer 34. At the same time, the plurality of third partition members 22b are spaced apart in parallel in the third cavity 231 and are divided into a plurality of third gaps 233, and the third gaps 233 can deposit materials on the second transport layer 33 to form the electrode layer 34. Further, the number of the third partition members 22b in the third auxiliary mechanism 230 coincides with the number of the third partition members 22b in the second auxiliary mechanism 220.

[0112] In some embodiments, in the first auxiliary mechanism 210, the second auxiliary mechanism 220, and the third auxiliary mechanism 230, one frame body can be shared, that is, the first frame body 214, the second frame body 225, and the third frame body 232 have the same structure. After the conductive layer 20 is completed, the first partition member 212 can be removed and covered with the isolator 222 or the third partition member 22b, etc.

[0113] In the process of manufacturing the conductive layer 20, the manufacturing jig 200 places the substrate 10 in the first cavity 211 and distributes a plurality of first partition members 212 on the substrate 10 at intervals, so as to make it more certain that each conductive layer 20 is segmented in the forming process and avoid the need to scribe with tools such as lasers after forming. After forming the conductive layer 20, the substrate 10 having the conductive layer 20 is placed in the second cavity 221, the isolators 222 are distributed on one side of the conductive layer 20 at intervals, each functional layer group 30 formed on one side of the conductive layer 20 is partitioned on both sides of the third partition member 22b, and the space occupied by the second partition member 22a on the conductive layer 20 is utilized to bring the functional layer group 30 into contact with the conductive layer 20 through this space, realizing the series connection of different functional layer groups 30. Thereby, the increase in series resistance caused by the scribing in the prior art being too shallow or too deep is effectively solved, and the stability of the performance of the solar cell module 100 is made more certain.

[0114] According to some embodiments of the present application, referring to FIG. 3, the first auxiliary mechanism 210 further includes two first support members 213 provided at intervals in the first cavity 211, and each first partition member 212 is connected between the two first support members 213.

[0115] The first support member 213 refers to a structure that provides support for fixing the first partition member 212. There are multiple fixing methods of the first support member 213 in the first cavity 211. For example, the fixing method may be bolt connection, welding, locking, magnetic adsorption, riveting, integral molding, etc., but is not limited thereto. Similarly, the connection between the first support member 213 and the first partition member 212 may be a detachable connection, such as bolt connection, locking, magnetic adsorption, etc., or a non-detachable connection, such as welding, integral molding, etc.

[0116] Installing the two first support members 213 is advantageous for making the fixing of the first partition member 212 more stable and improving the deposition accuracy of the conductive layer 20.

[0117] According to some embodiments of the present application, the first partition member 212, the second partition member 22a, and the third partition member 22b are all configured in a flat structure, and the flat surface of the first partition member 212 is parallel to the penetration direction of the first cavity 211, the flat surface of the second partition member 22a is parallel to the penetration direction of the second cavity 221, and the flat surface of the third partition member 22b is parallel to the penetration direction of the second cavity 221 or the third cavity 231.

[0118] The flat structure means that the thickness of the structure is smaller than at least one size of the flat surface of the structure. For example, the thickness of the structure is smaller than the length of the flat surface, or the thickness of this structure is smaller than the width of the flat surface, etc. Here, the flat surface is one side of the structure along its thickness direction. In some embodiments, when the first partition member 212, the second partition member 22a, and the third partition member 22b are all configured as flat structures, each thickness may be controlled to be 50 μm to 200 μm.

[0119] The flat surface of the first partition member 212 is parallel to the penetration direction of the first cavity 211, the flat surface of the second partition member 22a is parallel to the penetration direction of the second cavity 221, and the flat surface of the third partition member 22b is parallel to the penetration direction of the second cavity 221 or the third cavity 231, which indicates that the first partition member 212, the second partition member 22a, and the third partition member 22b are vertically placed in their respective cavities, that is, their respective flat surfaces are vertically arranged in their respective corresponding cavities.

[0120] All of the first partition member 212, the second partition member 22a, and the third partition member 22b are designed in a flattened manner to avoid reducing the space occupied by their respective thicknesses in the corresponding cavities and reducing the effective operating area of the module.

[0121] According to some embodiments of the present application, when the second frame body 225 is stacked and installed on the first frame body 214, in the first partition member 212 corresponding to the spacer 222, the second partition member 22a is located between the first partition member 212 and the third partition member 22b, and the distance D between the second partition member 22a and the corresponding first partition member 212 is 0μm < D ≤ 20μm.

[0122] When the second frame body 225 is stacked and installed on the first frame body 214, each spacer 222 is located on the same side of the first partition member 212. For example, they are collectively located on the left side or the right side of the first partition member 212, etc. It should be noted here that in the manufacturing module, after the conductive layer 20 is formed, the first frame body 214 is taken out, so the first frame body 214 and the second frame body 225 are not stacked and installed on each other. The purpose of limiting the installation of the second frame body 225 by stacking it on the first frame body 214 is to more surely ensure that when the first frame body 214 is removed and the second frame body 225 is used, the spacer 222 is located on the same side as the position where the first partition member 212 was originally.

[0123] The purpose of the second partition member 22a being located between the third partition member 22b and the first partition member 212 is that after the second partition member 22a is taken out, the formed second channel 35 is located between the semiconductor layer 32 and the third partition member 22b, and the subsequently formed electrode layer 34 contacts the conductive layer 20 at the position of the second channel 35. If the third partition member 22b is located between the second partition member 22a and the first partition member 212, when the subsequent electrode layer 34 is deposited, since the electrode layer 34 is partitioned by the third partition member 22b, a series connection between sub-batteries cannot be realized.

[0124] Appropriately controlling the distribution positions among the first partition member 212, the second partition member 22a, and the third partition member 22b is advantageous for obtaining an appropriate structure and making the module performance more stable.

[0125] According to some embodiments of the present application, referring to FIG. 3, the first support member 213 is located within the first cavity 211 and forms a cavity wall of the first cavity 211 and a first concave groove, and the first concave groove is used for arranging the substrate 10.

[0126] The first support member 213 is located within the first cavity 211, that is, one side surface of the first support member 213 is lower than one end of the first cavity 211. The first concave groove formed in this way facilitates the fixing of the substrate 10 and the deposition of the conductive layer 20.

[0127] Such a design makes it easier to fix the substrate 10, thereby making the deposition of the conductive layer 20 more stable.

[0128] According to some embodiments of the present application, referring to FIG. 5, the second auxiliary mechanism 220 further includes two second support members 223 spaced apart within the second cavity 221, and each second partition member 22a is arranged to connect the two second support members 223.

[0129] The second support member 223 refers to a structure that provides support for fixing the second partition member 22a. There are multiple fixing methods of the second support member 223 within the second cavity 221. For example, the fixing method may be bolt connection, welding, locking, magnetic adsorption, riveting, integral molding, etc., but is not limited thereto. Similarly, the connection between the second support member 223 and the second partition member 22a may be a detachable connection, such as bolt connection, locking, magnetic adsorption, etc., or a non-detachable connection, such as welding, integral molding, etc.

[0130] Installing the two second support members 223 is advantageous for making the fixing of the second partition member 22a more stable and improving the deposition accuracy of the functional layer group 30.

[0131] According to some embodiments of the present application, referring to FIG. 5, the second support member 223 is located within the second cavity 221 and forms a cavity wall of the second cavity 221 and a second concave groove, and the second concave groove is used for disposing the substrate 10 having the conductive layer 20.

[0132] The second support member 223 is located within the second cavity 221, that is, one side surface of the second support member 223 is lower than one end of the second cavity 221. The second concave groove formed in this way facilitates the fixation of the substrate 10 and the deposition of the functional layer group 30.

[0133] Such a design makes it easier to fix the substrate 10 having the conductive layer 20, thereby making the deposition of the functional layer group 30 more stable.

[0134] According to some embodiments of the present application, referring to FIG. 5, the second auxiliary mechanism 220 further includes two shielding members 224 disposed at intervals between the two second support members 223. The two shielding members 224 are located on both sides of the entire isolator 222 and are respectively adhered to the inner wall of the second cavity 221.

[0135] The shielding member 224 has a structure that prevents a part of the functional layer group 30 from being deposited at both ends close to the substrate 10. As shown in FIG. 9, it may similarly be disposed in the third auxiliary mechanism 230.

[0136] The connection method between the shielding member 224 and the second support member 223 is various. For example, the connection method may be, but is not limited to, bolt connection, welding, locking, magnetic adsorption, riveting, integral molding, etc.

[0137] Installing the shielding members 224 on both sides of the isolator 222 respectively is advantageous for shielding the deposition of the functional layer group 30 at the edge, and avoids the need to perform a subsequent edge removal process due to the formation of depositions at both ends of the substrate 10.

[0138] According to some embodiments of the present application, referring to FIG. 5, the second auxiliary mechanism 220 further includes a single second partition member 22a and a third partition member 22b. The single second partition member 22a and the third partition member 22b are respectively located on opposite sides of all the isolators 222.

[0139] By installing a single second partition member 22a and a third partition member 22b on each side respectively, sub-cells of the same specification can be further partitioned on the conductive layer 20 at one end, the semiconductor layer 32 on the conductive layer 20 at the other end is blocked, and the electrode layer 34 can be brought into contact with the conductive layer 20.

[0140] Such a design is advantageous for the specification of the sub-cell at one end to meet the design requirements. At the same time, it makes the contact between the electrode layer 34 and the conductive layer 20 of the sub-cell at the other end more reliable, and makes the structure and performance of the solar cell module 100 more stable.

[0141] According to some embodiments of the present application, referring to FIGS. 1 to 15, the present application provides a method for manufacturing a solar cell module 100, which may be a perovskite module. The first auxiliary mechanism 210 is designed such that a plurality of first partition members 212 are arranged therein at intervals. In the manufacture of the conductive layer 20, the substrate 10 is placed into the first auxiliary mechanism 210, and the conductive layer 20 is deposited on the substrate 10 using the first partition members 212. The second auxiliary mechanism 220 is designed such that a plurality of second partition members 22a and third partition members 22b are arranged therein at intervals, and each second partition member 22a is located on the same side as the first partition member 212. After depositing the conductive layer 20, the substrate 10 having the conductive layer 20 is placed into the second auxiliary mechanism 220, and the first transport layer 31, the semiconductor layer 32, and the second transport layer 33 are deposited on the conductive layer 20 using the second partition members 22a and the third partition members 22b. Finally, the third auxiliary mechanism 230 is designed such that a plurality of third partition members 22b are arranged therein at intervals, and the electrode layer 34 is deposited on the second transport layer 33 using the third partition members 22b, thereby completing the manufacture of the solar cell module 100.

[0142] Finally, it should be noted that the above embodiments are only for explaining the technical solutions of the present application and do not limit them. Although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that it is still possible to make modifications to the technical solutions described in the foregoing embodiments, or perform equivalent substitutions for some or all of their technical features. These modifications or substitutions do not deviate from the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application, and all should be included in the scope of the claims and the specification of the present application. In particular, as long as there is no structural contradiction, the technical features mentioned in each embodiment may be combined in any manner. The present application is not limited to the specific embodiments disclosed in the specification, but includes all technical solutions within the scope of the claims.

Description of Reference Numerals

[0143] 100: Solar cell module, 10: Substrate, 20: Conductive layer, 21: First channel, 30: Functional layer group, 31: First transport layer, 32: Semiconductor layer, 33: Second transport layer, 34: Electrode layer, 35: Second channel, 36: Third channel, 200: Manufacturing jig, 210: First auxiliary mechanism, 211: First cavity, 212: First partition member, 213: First support member, 214: First frame, 215: First gap, 220: Second auxiliary mechanism, 221: Second cavity, 222: Isolator, 22a: Second partition member, 22b: Third partition member, 223: Second support member, 224: Shielding member, 225: Second frame, 226: Second gap, 230: Third auxiliary mechanism, 231: Third cavity, 232: Third frame, 233: Third gap, X: Predetermined direction.

Claims

1. A method for manufacturing a solar cell module (100), comprising: providing a substrate (10); forming a conductive layer (20) on the substrate (10), the conductive layer (20) being isolated along a preset direction (X) by a first channel (21); disposing a separator (222) on a side of the conductive layer (20) facing away from the substrate (10), wherein the separator (222) includes a second partition member (22a) and a third partition member (22b) that are installed in parallel and have an integral structure or are separable; sequentially stacking and depositing a first transport layer (31), a semiconductor layer (32), and a second transport layer (33) on at least one side of the separator (222) along the preset direction (X); removing the separator (222) and inserting a new third partition member (22b) alone, or removing the second partition member (22a) and leaving the third partition member (22b) in the separator (222), and depositing an electrode layer (34) on one side of the second transport layer (33).

2. The step of forming a conductive layer (20) on the substrate (10), the conductive layer (20) being isolated along a preset direction (X) by a first channel (21), includes: disposing a first partition member (212) on the substrate (10) and performing deposition on both sides of the first partition member (212) along the preset direction (X), thereby forming a conductive layer (20) isolated by the first channel (21). The method for manufacturing a solar cell module (100) according to Claim 1.

3. The step of disposing a first partition member (212) on the substrate (10) and performing deposition on both sides of the first partition member (212) along the preset direction (X), thereby forming a conductive layer (20) isolated by the first channel (21), includes: disposing a plurality of first partition members (212) on the substrate (10) at intervals along the preset direction (X); performing sputtering on a side surface of the substrate (10) facing the first partition member (212) in a vacuum environment; removing the first partition member (212) and leaving the first channel (21) on the substrate (10) to form a plurality of the conductive layers (20). Method for manufacturing the solar cell module (100) according to claim 2.

4. The step of disposing the spacer (222) on a side of the conductive layer (20) facing away from the substrate (10) includes: simultaneously disposing a second partition member (22a) and a third partition member (22b) that are both bonded to each other on a side of at least a part of the conductive layer (20) facing away from the substrate (10). Method for manufacturing the solar cell module (100) according to claim 1.

5. The step of simultaneously disposing a second partition member (22a) and a third partition member (22b) that are both bonded to each other on a side of at least a part of the conductive layer (20) facing away from the substrate (10) includes: except for the conductive layers (20) located at both ends of the substrate (10), simultaneously disposing the second partition member (22a) and the third partition member (22b) on each of the conductive layers (20) along a preset direction (X), and controlling such that each of the second partition members (22a) is adjacent to a first side of the corresponding first channel (21), and the third partition member (22b) is located on a side of the second partition member (22a) facing away from the adjacent first channel (21). Method for manufacturing the solar cell module (100) according to claim 4.

6. When the distance between the second partition member (22a) and the adjacent first channel (21) is D, 0 μm < D ≤ 20 μm. Method for manufacturing the solar cell module (100) according to claim 5.

7. The step of simultaneously disposing a second partition member (22a) and a third partition member (22b) that are both bonded to each other on a side of at least a part of the conductive layer (20) facing away from the substrate (10) includes: disposing the second partition member (22a) on the conductive layer (20) located at one end of the substrate (10) and on the first side of the first channel (21), and controlling such that the second partition member (22a) is adjacent to the corresponding first channel (21). On a conductive layer (20) located at the other end of the substrate (10) and on the second side of the first channel (21), the third partition member (22b) is arranged, and further includes controlling the distance between the third partition member (22b) and the corresponding first channel (21), where the first side and the second side are two opposite sides. The method for manufacturing a solar cell module (100) according to claim 5.

8. The step of sequentially stacking and depositing a first transport layer (31), a semiconductor layer (32), and a second transport layer (33) on at least one side along a preset direction (X) of the spacer (222) is In a vacuum environment, includes sequentially depositing the first transport layer (31), the semiconductor layer (32), and the second transport layer (33) on a side of the conductive layer (20) facing away from the substrate (10). The method for manufacturing a solar cell module (100) according to any one of claims 1 to 7.

9. Before the step of sequentially stacking and depositing a first transport layer (31), a semiconductor layer (32), and a second transport layer (33) on at least one side along a preset direction (X) of the spacer (222), In at least one of the conductive layers (20) located at both ends of the substrate (10) along a preset direction (X), further includes shielding a side edge of the conductive layer (20) facing away from the substrate (10) and away from the first channel (21). The method for manufacturing a solar cell module (100) according to any one of claims 1 to 8.

10. The second partition member (22a) and the third partition member (22b) each have a thickness of 50 μm to 200 μm along the preset direction (X). The method for manufacturing a solar cell module (100) according to any one of claims 1 to 9.

11. The semiconductor layer (32) is a perovskite layer. The method for manufacturing a solar cell module (100) according to any one of claims 1 to 10.

12. A solar cell module (100) manufactured by using the method for manufacturing a solar cell module (100) according to any one of claims 1 to 11.

13. A battery including the solar cell module (100) according to claim 12.

14. A manufacturing jig (200) used in the method for manufacturing a solar cell module (100) according to any one of claims 1 to 11, A first auxiliary mechanism (210) including a plurality of first partition members (212) provided in parallel at intervals in the first cavity (211) through a first frame body (214) having the first cavity (211), A second auxiliary mechanism (220) including a plurality of spacers (222) provided in parallel at intervals in the second cavity (221) through a second frame body (225) having the second cavity (221), and each of the spacers (222) is arranged so as to be located on the same side of the corresponding first partition member (212). Here, the spacer (222) includes a second auxiliary mechanism (220) including a second partition member (22a) and a third partition member (22b) arranged in parallel, A third auxiliary mechanism (230) including a plurality of the third partition members (22b) provided in parallel at intervals in the third cavity (231) through a third frame body (232) having the third cavity (231), and the distribution position of the third partition member (22b) in the third cavity (231) coincides with the distribution position of the third partition member (22b) in the second cavity (221). The manufacturing jig (200) includes the third auxiliary mechanism (230).

15. The first auxiliary mechanism (210) further includes two first support members (213) provided at intervals in the first cavity (211), and each of the first partition members (212) is connected between the two first support members (213). The manufacturing jig (200) according to claim 14.

16. The first partition member (212), the second partition member (22a), and the third partition member (22b) are all configured to have a flat structure, and the flat surface of the first partition member (212) is parallel to the penetration direction of the first cavity (211), the flat surface of the second partition member (22a) is parallel to the penetration direction of the second cavity (221), and the flat surface of the third partition member (22b) is parallel to the penetration direction of the second cavity (221) or the third cavity (231). The manufacturing jig (200) according to claim 14 or 15.

17. When the second frame body (225) is stacked and installed on the first frame body (214), in the first partition member (212) corresponding to the separator (222), the second partition member (22a) is located between the first partition member (212) and the third partition member (22b), and the distance D between the second partition member (22a) and the corresponding first partition member (212) satisfies 0 μm < D ≤ 20 μm. The manufacturing jig (200) according to any one of claims 14 to 16.

18. The second auxiliary mechanism (220) further includes two second support members (223) provided at intervals within the second cavity (221), and each of the second partition members (22a) is connected between the two second support members (223). The manufacturing jig (200) according to any one of claims 14 to 17.

19. The second auxiliary mechanism (220) further includes two shielding members (224) connected at intervals between the two second support members (223). The two shielding members (224) are located on both sides of all the separators (222) and are respectively adhered to the inner wall of the second cavity (221). The manufacturing jig (200) according to claim 18.

20. The second auxiliary mechanism (220) further includes a single second partition member (22a) and a single third partition member (22b). The single second partition member (22a) and the third partition member (22b) are respectively located on opposite sides of all the separators (222). The manufacturing jig (200) according to any one of claims 14 to 19.

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