Multi-plenum gas manifold for a substrate processing system

Abstract

A multi-plenum gas manifold comprising a monolith body and a first plenum and a second plenum is disclosed. The first plenum is disposed within the monolith body and is configured to distribute a first gas species to, or divert from, one or more substrate processing stations. The first plenum has a first cavity and a first channel set extending outwardly from the first cavity. The second plenum is disposed within the monolith body separate from the first plenum and is configured to distribute a second gas species to, or divert from, one or more substrate processing stations. The second plenum has a second cavity disposed radially outward of the first cavity. A second channel set extends outwardly from the second cavity.

Description

Technical Field

[0001] [Cross - Reference to Related Applications] This application claims the benefit of U.S. Provisional Application No. 63 / 359,545, filed Jul. 8, 2022. The entire disclosure of the above application is incorporated herein by reference. This disclosure relates to a gas switching distribution system for a substrate processing tool.

Background Art

[0002] The background art described herein is intended to generally present the content of the present disclosure. The inventions of the presently named inventors are not to be regarded as prior art to the present disclosure, either expressly or implicitly, to the extent that they are described in this background art section and in aspects of the description that do not fall within the scope of what is considered prior art at the time of filing.

[0003] A substrate processing system may be used to perform etching, film deposition, and / or other processes on a substrate such as a semiconductor wafer. Examples of processes that can be performed on the substrate include, but are not limited to, plasma enhanced chemical vapor deposition (PECVD) processes, physical vapor deposition (PVD) processes, ion implantation processes, and / or other etching, film deposition, and cleaning processes. By way of example, during a film deposition process, the substrate may be placed on an electrostatic chuck (ESC) of the substrate processing system, and a thin film may be deposited on the substrate.

Summary of the Invention

[0004] A multiprenum gas manifold is disclosed that includes a monolith body, a first plenum, and a second plenum. The first plenum is disposed within the monolith body and is configured to distribute or divert a first gas species to or from one or more substrate processing stations. The first plenum includes a first cavity and a first channel set that extends outwardly from the first cavity. The second plenum is disposed within the monolith body separate from the first plenum and is configured to distribute or divert a second gas species to or from one or more substrate processing stations. The second plenum includes a second cavity disposed radially outward of the first cavity. A second channel set extends outwardly from the second cavity.

[0005] In other features, the first cavity and the second cavity are circular. In other features, the first cavity and the second cavity are concentric cavities. In other features, at least one of the first cavity and the second cavity is non-circular.

[0006] In other features, the multiprenum gas manifold further includes one or more caps configured to seal the first cavity and the second cavity. In other features, the one or more caps include a first cap configured to seal the first cavity and a second cap configured to seal the second cavity. In other features, the first cap is thicker than the second cap. In other features, the first cavity is deeper than the second cavity.

[0007] In other features, the volume of the first cavity is equal to the volume of the second cavity. In other features, the volume of the first cavity is different from the volume of the second cavity.

[0008] In other features, the first channel set includes a draw channel and a divert channel. The draw channel draws the first gas species into the first cavity. The first cavity directs the first gas species from the draw channel to the divert channel.

[0009] In other features, the first channel set includes a source channel and a distribution channel. The distribution channel distributes the first gas species from the first cavity. The first cavity receives the first gas species from the source channel and distributes the first gas species to the distribution channel.

[0010] In other features, the second channel set includes a withdrawal channel and a conversion channel. The withdrawal channel withdraws the second gas species into the second cavity. The second cavity directs the second gas species from the withdrawal channel to the conversion channel.

[0011] In other features, the second channel set includes a source channel and a distribution channel. The distribution channel distributes the second gas species from the second cavity. The second cavity receives the second gas species from the source channel and distributes the second gas species to the distribution channel. In other features, the second channel set is offset from the first channel set in at least one of an axial direction and a perpendicular direction.

[0012] In other features, the multi-plenum gas manifold further includes a third plenum including a third cavity and a third channel set separated from the first plenum and the second plenum. In other features, the third cavity is radially adjacent to a part of the first cavity and axially adjacent to a part of the second cavity. In other features, the third channel set includes two channels in total.

[0013] In other features, the multi-plenum gas manifold further includes a coupler connected to the first channel set and the second channel set, the coupler being configured to transfer the first gas species and the second gas species between the multi-plenum gas manifold and a substrate processing station when connected to a conduit.

[0014] In another aspect, a substrate processing system is provided that includes a multi-plenum gas manifold and a substrate processing chamber having a plurality of substrate processing stations. The multi-plenum gas manifold transfers a first gas species and a second gas species between the multi-plenum gas manifold and the substrate processing stations.

[0015] In another aspect, the substrate processing system further includes a conduit. The multi-plenum gas manifold includes a coupler connected to a first channel set and a second channel set. The conduit is connected to the coupler and transfers a first gas species and a second gas species between the multi-plenum gas manifold and the substrate processing stations.

[0016] In another aspect, the first channel set includes a withdrawal channel and a conversion channel. The withdrawal channels are each connected to a substrate processing station and withdraw a first gas species from the substrate processing station to a first cavity. The first cavity directs the first gas species from the withdrawal channels to the conversion channel.

[0017] In another aspect, the first channel set includes a source channel and a distribution channel. The distribution channels are each connected to a substrate processing station and distribute a first gas species from the first cavity to the substrate processing station. The first cavity receives the first gas species from the source channel and distributes the first gas species to the distribution channels.

[0018] In another aspect, the second channel set includes a withdrawal channel and a conversion channel. The withdrawal channels are each connected to a substrate processing station and withdraw a second gas species from the substrate processing station to a second cavity. The second cavity directs the second gas species from the withdrawal channels to the conversion channel.

[0019] In other features, the second channel set includes a source channel and a distribution channel. The distribution channels are each connected to a substrate processing station and distribute a second gas species from the second cavity to the substrate processing station. The second cavity receives the second gas species from a gas source and distributes the second gas species to the distribution channels.

[0020] In other features, the number of channels in the first channel set is less than or equal to the total number of substrate processing stations in the substrate processing chamber plus one. In other features, the number of channels N in the second channel set is less than or equal to the total number of substrate processing stations M in the substrate processing chamber plus one.

[0021] In other features, the first channel set includes an extraction channel and a conversion channel. The total number of extraction channels in the first plenum is less than or equal to the total number of substrate processing stations in the substrate processing chamber.

[0022] In other features, the first channel set includes a source channel and a distribution channel. The total number of distribution channels in the first plenum is less than or equal to the total number of substrate processing stations in the substrate processing chamber.

[0023] In other features, the second channel set includes an extraction channel and a conversion channel. The total number of extraction channels in the second plenum is less than or equal to the total number of substrate processing stations in the substrate processing chamber.

[0024] In other features, the second channel set includes a source channel and a distribution channel. The total number of distribution channels in the second plenum is less than or equal to the total number of substrate processing stations in the substrate processing chamber.

[0025] Further applicable fields of the present disclosure will become apparent from the embodiments for carrying out the invention, the claims, and the drawings. The embodiments and specific examples for carrying out the invention are for illustrative purposes only and are not intended to limit the scope of the present disclosure.

Brief Description of the Drawings

[0026] The present disclosure will be better understood from the embodiments for carrying out the invention and the accompanying drawings.

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[0044] In the drawings, reference numerals may be repeated to identify similar and / or identical elements.

Best Mode for Carrying Out the Invention

[0045] The multi-station processing tool may include a plurality of processing stations disposed in a processing chamber. During substrate processing, various gas species may be supplied to and converted from the substrate processing stations. To facilitate the distribution and conversion of gas species, one or more stacks consisting of separate manifolds may be used. Each manifold is used to i) distribute a specific gas species to a plurality of processing stations or ii) convert a specific gas species from a plurality of processing stations. Each manifold for distributing a gas species may receive the gas species from a source such as a gas box and supply the gas species to a plurality of stations. Each manifold used for converting a gas species may receive the gas species from a plurality of stations and convert the collected gas species to a foreline (or a large exhaust line). The more gas species to be supplied and / or converted, the more manifolds and corresponding supply / conversion lines are incorporated into the tool. Each manifold may include a respective housing having an upper wall and a bottom wall. Depending on the processing system, there may be a large number of manifolds and corresponding supply / conversion lines, which may require a large amount of space available within the tool. Since the available space is limited, this type of arrangement may be crowded and / or infeasible.

[0046] The examples described herein include the arrangement of a multi-plenum gas manifold configured for small-scale, centralized gas distribution and conversion. This arrangement minimizes the corresponding space volume occupied within the tool and allows for an increase in the number of plenums with a minimal increase in the occupied space volume. This arrangement allows for the expansion of any number of plenums. Each of the multi-plenum gas manifolds disclosed herein includes a plurality of plenums each having a cavity and a plurality of channels extending radially outward from the cavity. The miniaturization of the multi-plenum gas manifold design is due to the arrangement of the cavities and the stacked arrangement of the inlet gas channels and the outlet gas channels at multiple axial levels.

[0047] The disclosed examples include multi-plenum gas manifolds having concentric cavities and / or radially offset cavities. The cavities have different shapes and / or dimensions. Some examples include a monolith having a plurality of cavities and each channel set. In some examples, the channels of the first cavity extend adjacent to and / or through one or more other cavities. The channels of the first cavity are axially offset from the channels of one or more other cavities to facilitate attachment to and access to the coupler of the channel set. Each plenum of the multi-plenum gas manifold may have an N-M relationship between the number of inlet channels and the number of outlet channels (N and M are integers greater than or equal to 1). In some examples, the longitudinal centers of the channels of different plenums within the multi-plenum gas manifold are arranged in the same plane or are axially offset so as to be arranged in different planes. These and other exemplary embodiments are further described below.

[0048] FIG. 1 shows a substrate processing system (or tool) 100, which includes a processing chamber 101 and one or more multi-plenum gas manifolds 102 implemented to distribute different gas species to a plurality of processing stations (two processing stations 104 are shown in FIG. 1) within the processing chamber 101. Examples of the multi-plenum gas manifold 102 are shown and described with respect to FIGS. 2-17. FIG. 1 shows a distribution manifold (i.e., the multi-plenum gas manifold 102), but the substrate processing system 100 may include a conversion manifold, examples of which are shown in FIGS. 2-17. Each of the multi-plenum gas manifolds shown in FIGS. 2-17 may be implemented as a distribution manifold and / or a conversion manifold. Each plenum of each multi-plenum gas manifold may be connected to operate as (i) a distribution plenum having one supply channel and one or more distribution channels, where gas flows through the manifold in a first direction, or (ii) a conversion plenum having one or more extraction channels and one conversion channel, where gas flows through the manifold in a reverse (or second) direction. Each plenum may be used to supply or convert only one gas species. In one embodiment, for example, one or more plenums may be used to supply a gas mixture including a processing (or reaction) gas used in an etching, film deposition, or cleaning process, as well as an inert gas (e.g., argon).

[0049] Referring to FIG. 1, each processing station has a respective substrate support (e.g., substrate support 106) such as an electrostatic chuck and a showerhead (e.g., showerhead 108). Each processing station 104 has an upper electrode and a lower electrode. The showerhead may be implemented as the upper electrode or may have an upper electrode. The substrate support may be implemented as the lower electrode or may have a lower electrode. The upper electrode and the lower electrode may be implemented as high-frequency (RF) electrodes, bias electrodes, clamp electrodes, and / or heating electrodes. By way of example only, the upper electrode may be implemented as a showerhead that introduces and distributes gas into the processing station. The showerhead may include a stem portion 116 having an end connected to the upper surface of the processing chamber 101. The showerhead is generally cylindrical and extends radially outward from the opposite end of the stem portion 116 at a position away from the upper surface of the processing chamber. The substrate-facing surface of the showerhead has holes through which the processing gas or purge gas flows. Alternatively, the showerhead has a conductive plate and the gas may be introduced in another way.

[0050] The RF generation system 120 generates an RF voltage and outputs the RF voltage to the upper electrode and the lower electrode. For each processing station, either the upper electrode or the lower electrode may be DC grounded or AC grounded, or may be at a floating potential. By way of example only, the RF generation system 120 may be controlled by a system controller 121 and have one or more RF generators 122 (e.g., capacitive coupling plasma RF power generators, bias power generators, and / or other RF power generators) that generate an RF voltage. The RF voltage is supplied to the upper electrode and / or the lower electrode by one or more matching and distribution networks 124. The system controller 121 sets and adjusts the frequencies of the RF signals output from the RF generators 123 and 125. The frequencies may be adjusted to regulate the power distribution across the substrate support.

[0051] As an example, a first RF generator 123, a second RF generator 125, a first RF matching network 127, and a second RF matching network 129 are shown. The first RF generator 123 and the first RF matching network 127 may provide an RF voltage or simply connect the showerhead to a ground reference. The second RF generator 125 and the second RF matching network 129 may be referred to as a power supply, either individually or collectively, and may provide an RF / bias voltage to the substrate support. In one embodiment, the first RF generator 123 and the first RF matching network 127 provide power to ionize the gas and drive the plasma. In another embodiment, the second RF generator 125 and the second RF matching network 129 provide power to ionize the gas and drive the plasma. Either of the RF generators 123 and 125 may be a high-power RF generator that generates power of, for example, 6 to 10 kilowatts (kW) or more.

[0052] The gas supply system 130 has one or more gas sources 132-1, 132-2, ···, and 132-N (collectively, gas source 132), where N is an integer greater than zero. The gas source 132 supplies one or more precursors and their gas mixtures. The gas source 132 may supply an etching gas, a carrier gas, and / or a purge gas. A vaporized precursor may be used. The gas source 132 is connected to respective plenums of one or more multiprenum gas manifolds 102 by valves 134-1, 134-2, ···, and 134-N (collectively, valves 134), and mass flow controllers 136-1, 136-2, ···, and 136-N (collectively, mass flow controllers 136). The output of the manifold 102 is supplied to the processing station in the chamber 101. By way of example only, the output of the manifold 102 may be supplied to the showerhead.

[0053] Valve 156 and pump 158 may be used to discharge reactants from the processing chamber 101. Although one valve 156 and one pump 158 are shown, additional valves and / or pumps may be included. For gas conversion, as further described below, one or more multiprenum gas manifolds may be used.

[0054] System controller 121 may control the components of the substrate processing system 100. Such control includes control of the supplied RF power level, the pressure and flow rate of the supplied gas, RF matching, etc. System controller 121 controls the states of valve 156 and pump 158. Robot 164 may be used to supply a substrate to the processing station 104 and remove the substrate from the processing station 104. For example, robot 164 may transfer a substrate between the substrate support 106 and the load lock 166. Robot 164 may be controlled by system controller 121. System controller 121 may control the operation of load lock 166. Valves, gas pumps and / or refrigerant pumps, power supplies, RF generators, etc. may be referred to as actuators.

[0055] The substrate processing system 100 further includes a power supply 170 that can supply power to the system controller 121. Power supply 170 may be controlled by system controller 121. System controller 121 may control the power supply from power supply 170 to the RF generation system 120.

[0056] FIG. 2 shows a top view of a substrate processing chamber 200 that includes a multi-plenum gas manifold 202 implemented to convert different gas species from a plurality of processing stations 204. In the example of FIG. 2, a multi-plenum gas manifold 202 having two plenums is shown. Each plenum has a plurality of extraction input channels and one conversion output channel. The first plenum has an extraction input channel 210 and a conversion output channel 212. The second plenum has an extraction input channel 214 and a conversion output channel 216. The extraction input channel 210, the conversion output channel 212, the extraction input channel 214, and the conversion output channel 216 extend outwardly from the multi-plenum gas multi-plenum gas manifold 202 to various locations of the processing station 204. Each plenum may have one or more extraction input channels for each one or more processing stations 204. In the example of the figure, the first plenum has four extraction input channels and the second plenum has three extraction input channels. The channels may each have respective couplers. Examples of couplers are shown in FIGS. 4-14. The multi-plenum gas manifold 202 is shown as octagonal, but may have different shapes and may have a different number of sides. By way of example, the multi-plenum gas manifold 202 may be circular.

[0057] FIG. 3 shows a gas conversion system 300 that includes a multi-plenum gas manifold 302 that receives gas species from a plurality of substrate processing stations 304. By way of example, the multi-plenum gas manifold 302 may have two plenums, each plenum receiving a specific gas species from the substrate processing stations 304. The first plenum may receive a first gas species from each of the substrate processing stations 304. The second plenum may receive a second gas species from each of the substrate processing stations 304. The multi-plenum gas manifold 302 receives two gas species and directs the gas species to respective vacuum forelines 306. One or more vacuum pumps 308 may draw gas species from the substrate processing stations 304 to the vacuum forelines 306 via the multi-plenum gas manifold 302. The vacuum pump 308 may be controlled by a system controller (e.g., system controller 121 of FIG. 1).

[0058] FIGS. 4-5 show a dual-plenum gas manifold 400 (also referred to as a multi-plenum gas manifold) having a body 402, channels (outer protrusions of some channels indicated by 404), a coupler 406, and caps 408 and 410. The plenums are separated from each other. The coupler 406 may be (i) welded directly to the channels having outer protrusions or (ii) indirectly connected to the channels 404 via a conduit 412 as shown by coupler 406A. The coupler 406A may be welded to a conduit 412 welded to a protrusion of the channels of the body 402. The coupler 406A may be a female coupler 406A1 or a male coupler 406A2. The coupler 406 may be screwed into a threaded hole 414 of the body 402 as shown by coupler 406B.

[0059] The body 402 has mounting holes 420, for example, where fasteners extend to attach the body 402 to the top plate of a processing chamber (e.g., processing chamber 101 of FIG. 1). The fasteners may be bolts that pass through the holes 420 and are screwed into the top plate.

[0060] Caps 408 and 410 cover and seal the first cavity 600 and the second cavity 602 of the two plenums of the dual-plenum gas manifold 400 shown in FIGS. 6-7, respectively. Caps 408 and 410 may be concentric, and the first cavity 600 and the second cavity 602 may be concentric such that the second cavity 602 is disposed radially outward of the first cavity 600. FIG. 6 shows a side cross-sectional view of the dual-plenum gas manifold 400 of FIGS. 4-5 taken along the section line A-A of FIG. 5. FIG. 7 shows a side upper cross-sectional perspective view of the dual-plenum gas manifold 400 of FIGS. 4-5 taken along the section line B-B of FIG. 5. The first plenum of the dual-plenum gas manifold 400 means the first cavity 600 and the channels extending from the first cavity 600. The second plenum of the dual-plenum gas manifold 400 means the second cavity 602 and the channels extending from the second cavity 602. The first cavity 600 may be covered by a cap 408 that can be press-fitted, welded, and / or otherwise attached to the body 402.

[0061] The first cavity 600 may have a first depth D1, and the second cavity 602 may have a second depth D2. The first cap 408 may have a first thickness T1, and the second cap 410 may have a second thickness T2 that may be smaller than T1. The thickness T1 may be smaller than the thickness T2 such that the first volume of the first cavity 600 is the same as the second volume of the second cavity 602. The first cavity 600 may have a height H1, based on the thickness T1. The second cavity 602 may have a height H2, based on the thickness T2. In the example of the figure, the first cavity 600 is deeper than the second cavity 602. In FIG. 6, two channels 610 of the first plenum are shown, and two channels 612 of the second plenum are shown. The first volume of the first cavity 600 may be the same as or different from the second volume of the second cavity 602.

[0062] FIG. 8 shows a bottom view of the dual plenum gas manifold 400 of FIGS. 4 - 5 having a body 402. The channels of the body 402 are connected to the conduits 412 and the conduit 800 of the coupler 406B. FIG. 9 shows a side view of the dual plenum gas manifold 400 of FIGS. 4 - 5. Either the conduit 412 or 800 is shown, and several couplers 406 are shown. The channels of the first plenum are offset both vertically and axially from the channels of the second plenum. A vertical offset VO between the center of the channel of the first plenum and the center of the channel of the second plenum is shown. The vertical offset VO may be based on the outer diameter of the channel. The larger the outer diameter, the larger the offset. As an example, the outer diameter of the channel may be 0.375 inches (or 9.525 millimeters (mm)), and the vertical offset may be 0.25 - 0.5 inches (or 6.35 - 12.7 mm). In an embodiment, the channels of the first plenum and the second plenum do not overlap annularly. In an embodiment, the channels of the first plenum and the second plenum do not cross each other.

[0063] The longitudinal centerlines of the channels of the plenum may be arranged in the same plane, or may be offset axially so as to be arranged in different planes as shown in the figure. In FIG. 9, a central point 910 of the channel of the first plenum and a central point 912 of the channel of the second plenum are shown, representing the longitudinal centerlines extending along the length of the channels. The longitudinal centerline of the first plenum is in a first plane 914. The longitudinal centerline of the second plenum is in a second plane 916 that is offset axially and vertically from the first plane 914.

[0064] FIG. 10 shows a part of the dual plenum gas manifold 400 of FIGS. 4 - 5, showing a cross section through a part of the body 402 and two channels of the dual plenum gas manifold 400. The channels are denoted 1000 and 1002 and have corresponding couplers 406A1. Channels 1000 and 1002 have protrusions 1004 and 1006 that extend outwardly from the body 402. To form the body 402, an initial block of material may be cross - drilled to provide channels 1000 and 1002, and then the outer portions of the material block may be machined to remove material and provide protrusions 1004 and 1006. Channels 1000 and 1002 and other channels of the body 402 may extend radially outwardly from the centerline 1010 of the body 402. Conduits 1020 and 1022 may be welded to protrusions 1004 and 1006 and couplers 406A1. FIG. 10 also shows a cross - sectional portion 1030 of the body 402 that provides an annular separation wall between cavity 600 and cavity 602 and extends upwardly from base 1032.

[0065] FIGS. 11 - 14 show a triple plenum gas manifold 1100 comprising a body 1102 and three plenums each having a first cavity 1204, a second cavity 1206, and a third cavity 1208, and corresponding channel sets. The first plenum has the first cavity 1204 and the first channel set 1210. The second plenum has the second cavity 1206 and the second channel set 1212. The third plenum has the third cavity 1208 and the third channel set 1214. In the example of the figure, the third channel set includes a total of two channels. The first cavity 1204 may be notched as shown in the figure such that a part of the first cavity is crescent - shaped and the innermost end 1215 closest to the third cavity 1208 is straight to accommodate the third cavity 1208. In an embodiment, the channels 1214 extend at 90° to each other. A separation wall 1218 exists between the first cavity 1204 and the second cavity 1206.

[0066] The body 1102 has caps 1220 and 1222 that cover and seal the first cavity 1204 and the second cavity 1206. The caps 1220 and 1222 may be configured in the same manner as the caps 408 and 410 in FIGS. 4-5. The caps 1220 and 1222 may be concentric, and the first cavity 1204 and the second cavity 1206 may be concentric. The first cavity 1204 is circular, and the second cavity 1206 is ring-shaped.

[0067] The first channel set 1210 is connected to a coupler 1230. The second channel set 1212 is connected to a coupler 1232. The third channel set 1214 is connected to a coupler 1234. The first channel set 1210 may be connected to the coupler 1230 via conduits, some of which are indicated by 1240. The second channel set 1212 may be connected to the coupler 1232 via conduits, some of which are indicated by 1242. The third channel set 1214 may be connected to the coupler 1234 via conduits, some of which are indicated by 1244. The portion 1236 of the body 1102 that partially encloses the third cavity 1208 is shown in FIGS. 12 and 14. The third cavity 1208 is laterally (or radially) adjacent to a portion of the first cavity 1204 and axially adjacent to a portion of the second cavity 1206. The portion 1236 projects radially inwardly into a portion of the first cavity 1204.

[0068] The first plenum, the second plenum, and the third plenum are separated from each other and may operate as a distribution plenum or a switching plenum. Each plenum may have one source channel and one or more distribution channels when distributing gas species. Each plenum may have one switching channel and one or more extraction channels when switching gas species. Since there are several substrate processing stations in the corresponding substrate processing chamber, each plenum may have the same number or a smaller number of distribution channels or extraction channels. In an embodiment, none of the channels overlap annularly. In an embodiment, the channels do not cross each other.

[0069] The multi-plenum gas manifold of FIGS. 4-14 having two caps is shown, although the multi-plenum gas manifold may have one cap closing a plurality of cavities, or may not have a cap. In one embodiment, the body of the multi-plenum gas manifold is formed such that the openings shown in FIGS. 4-14 that are closed by the caps are covered by the upper wall of the body. Each upper wall is integrally formed as part of the corresponding body.

[0070] The body of the multi-plenum gas manifold of FIGS. 4-14 may be formed of stainless steel, nickel-based alloy, aluminum, and / or other suitable materials. In one embodiment, the body is formed of a material suitable for withstanding the passage of corrosive gas species and the pressure of gas species.

[0071] FIGS. 15-16 show a portion 1500 of another tri-plenum gas manifold having concentric cavities. Portion 1500 is provided to show that a multi-plenum gas manifold can include three or more concentric cavities and corresponding channel sets. The multi-plenum gas manifold of FIGS. 1-14 may be configured to include any number of concentric cavities and corresponding channel sets.

[0072] The tri-plenum gas manifold includes a body having a first cavity 1504, a second cavity 1506, and a third cavity 1508. The body may have a first annular wall 1510 surrounding at least a portion of the first cavity 1504, a second annular wall 1512 surrounding at least a portion of the second cavity 1506, and a third annular wall 1514 surrounding at least a portion of the third cavity 1508. The body may have a bottom annular wall closing the bottoms of the first cavity 1504, the second cavity 1506, and the third cavity 1508. The body may have caps closing the tops of cavities 1504, 1506, and 1508, similar to the caps shown and described for the multi-plenum gas manifold of FIGS. 4-14. In an embodiment, the body is a monolith.

[0073] The first cavity 1504 has a channel 1520 that extends radially outward therefrom. The second cavity 1506 has a channel 1522 that extends radially outward therefrom. The third cavity 1508 has a channel 1524 that extends radially outward therefrom. The channels 1520, 1522, and 1524 may be offset from each other axially, vertically, and / or circumferentially. Two or more of the channels 1520, 1522, and 1524 may be offset axially from each other and may overlap circumferentially. For example, the first channel may be axially offset from the second channel and may overlap circumferentially such that the first channel is at least partially over the second channel. In an embodiment, none of the channels 1520, 1522, and 1524 overlap circumferentially. In an embodiment, the channels 1520, 1522, and 1524 do not cross each other. The channels 1520, 1522, and 1524 may be straight channels as shown in the figure or may be non-straight.

[0074] FIG. 17 shows a portion 1700 of a multi-plenum gas manifold similar to the tri-plenum gas manifold of FIGS. 15-16. The multi-plenum gas manifold includes a plurality of plenums 1702, 1704, 1706, and 1708. Plenums 1702 and 1704 are concentric. Plenums 1706 and 1708 may be in a semi-circular arch shape. Plenums 1706 and 1708 do not have circular cavities. Plenums 1702, 1704, 1706, and 1708 each have their respective cavities and channel sets. Each of plenums 1702, 1704, 1706, and 1708 may have any number of channels. In the example of the figure, plenum 1702 has two channels 1710, plenum 1704 has two channels 1712, plenum 1706 has three channels 1714, and plenum 1708 has three channels 1716. A multi-plenum gas manifold having a specific number of circular cavities (e.g., a first cavity 1720 and a second cavity 1722 of plenums 1702 and 1704) and non-circular cavities (e.g., a third cavity 1724 and a fourth cavity 1726 of plenums 1706 and 1708) is shown, but the multi-plenum gas manifold may have any number of circular cavities and any number of non-circular cavities. As an example, plenum 1704 may be divided to provide two non-circular cavities of a shape similar to the cavities of plenums 1706 and 1708.

[0075] The multi-plenum gas manifold may have a body. The body may have a first circular wall 1730 surrounding at least a part of the first cavity 1720, a second circular wall 1732 surrounding at least a part of the second cavity 1722, a side wall 1734 surrounding at least a part of the third cavity 1724, and a side wall 1736 surrounding at least a part of the fourth cavity 1726. The body may have a bottom circular wall closing the bottoms of the first cavity 1720, the second cavity 1722, the third cavity 1724, and the fourth cavity 1726. The body may have caps similar to the caps shown and described for the multi-plenum gas manifolds of FIGS. 4 to 14, respectively closing the tops of the first cavity 1720, the second cavity 1722, the third cavity 1724, and the fourth cavity 1726. In an embodiment, the body is a monolithic body.

[0076] Examples disclosed herein include a multi-plenum gas manifold having a multi-level gas flow path that ensures that gas species remain isolated when the gas species are distributed to and / or converted from a substrate processing station.

[0077] The foregoing description is merely exemplary in nature and is not intended to limit the present disclosure, its application, or its use. The broad teachings of the present disclosure can be implemented in a variety of forms. Thus, while the present disclosure includes specific examples, other modifications will become apparent upon review of the drawings, the specification, and the following claims, and the true scope of the present disclosure should not be so limited. It should be understood that one or more steps in a method may be performed in a different order (or simultaneously) without changing the principles of the present disclosure. Further, while each embodiment has been described as having specific features, any one or more of those features described with respect to embodiments of the present disclosure may be implemented in other embodiments and / or combined with features of other embodiments (even if not explicitly stated), i.e., the described embodiments are not mutually exclusive, and rearrangement of one or more embodiments remains within the scope of the present disclosure.

[0078] Spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.) are described using various terms including "connected", "engaged", "coupled", "adjacent", "proximate", "on", "above", "below", and "disposed". When the relationship between a first element and a second element is described in the above disclosure, unless expressly stated to be "direct", the relationship can be a direct relationship with no other intervening elements between the first element and the second element, but can also be an indirect relationship with one or more intervening elements (spatially or functionally) between the first element and the second element. The expression "at least one of A, B, and C" as used herein should be interpreted to mean a logical (A OR B OR C) using non-exclusive logical OR, and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C".

[0079] In some embodiments, the controller is part of a system that can be part of the above examples. Such a system can include a semiconductor processing apparatus comprising a processing tool, a chamber, a processing platform, and / or specific processing components (such as a wafer pedestal, a gas flow system, etc.). These systems can be integrated with electronics for controlling the operation of the semiconductor wafer or substrate before, during, and after processing. This electronics is referred to as a "controller" and can control various components or sub-components of the system. The controller can be programmed to control any process disclosed herein, including the supply of process gases, temperature setting (e.g., heating and / or cooling), pressure setting, vacuum setting, power setting, radio frequency (RF) generator setting, RF matching circuit setting, frequency setting, flow rate setting, fluid supply setting, position movement setting, wafer loading and unloading to and from the tool and other transfer tools, and / or wafer loading and unloading to and from a load lock connected or coupled to a particular system.

[0080] Generally, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receives instructions, issues instructions, controls operations, enables cleaning operations, enables endpoint measurements, etc. The integrated circuit may include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions are instructions transmitted to the controller in the form of various individual settings (or program files) that may define operating parameters for performing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to implement one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0081] In some embodiments, the controller may be part of a computer integrated with or coupled to the system, otherwise network-connected to the system, or a combination thereof, or may be coupled to the computer. For example, the controller may be within a "cloud" that enables remote access to wafer processing, or may be all or part of a fab host computer system. The computer enables remote access to the system to monitor the progress of manufacturing operations, investigate the history of past manufacturing operations, investigate trends or implementation criteria from multiple manufacturing operations to change the parameters of the current process, set the process steps following the current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide a process recipe to the system through a network that can include a local network or the Internet. The remote computer may then include a user interface that enables parameter and / or setting entries or programming to be transmitted from the remote computer to the system. In some examples, the controller receives instructions in a data format that specifies the parameters of each process step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool configured to be connected or controlled by the controller. Thus, as described above, the controller may be distributed, for example, by including one or more separate controllers network-connected to each other and cooperating towards a common purpose such as the processes and controls described herein. An example of a controller distributed for such a purpose would be one or more integrated circuits on a chamber that are installed remotely (e.g., at the platform level or as part of a remote computer) and communicate with one or more integrated circuits that cooperate to control the process in the chamber.

[0082] Rather than being restrictive, the exemplary system may include a plasma etching chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etching chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etching (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and other semiconductor processing systems that may be relevant or used in the fabrication and / or manufacture of semiconductor wafers.

[0083] As described above, depending on the processing steps performed by the tool, the controller may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools installed throughout the factory, the main computer, another controller, or tools used for material transport to and from the wafer container with respect to the tool position and / or load port in a semiconductor manufacturing facility.

Claims

1. A multiprenum gas manifold, comprising: A monolithic body; A first plenum disposed within the monolithic body and configured to distribute one or more first gas species to, or divert from, one or more substrate processing stations; A first cavity; A first channel set extending outwardly from the first cavity; The first plenum including the first cavity and the first channel set; A second plenum disposed within the monolithic body separate from the first plenum and configured to distribute a second gas species to, or divert from, the one or more substrate processing stations; A second cavity disposed radially outward of the first cavity; A second channel set extending outwardly from the second cavity; The second plenum including the second cavity and the second channel set; A multiprenum gas manifold comprising the foregoing.

2. The multiprenum gas manifold according to claim 1, wherein The first cavity and the second cavity are circular.

3. The multiprenum gas manifold according to claim 1, wherein The first cavity and the second cavity are concentric cavities.

4. The multiprenum gas manifold according to claim 1, wherein At least one of the first cavity and the second cavity is non-circular.

5. The multiprenum gas manifold according to claim 1, further comprising One or more caps configured to seal the first cavity and the second cavity.

6. The multiprenum gas manifold according to claim 5, wherein The one or more caps include A first cap configured to seal the first cavity; and A second cap configured to seal the second cavity.

7. The multiprenum gas manifold according to claim 6, wherein The first cap is thicker than the second cap.

8. The multiprenum gas manifold according to claim 7, wherein The first cavity is deeper than the second cavity.

9. The multiprenum gas manifold according to claim 1, wherein ​ A multi-plenum gas manifold in which a first volume of the first cavity is equal to a second volume of the second cavity.

10. The multi-plenum gas manifold according to claim 1, A multi-plenum gas manifold in which a first volume of the first cavity is different from a second volume of the second cavity.

11. The multi-plenum gas manifold according to claim 1, wherein the first channel set includes a plurality of extraction channels and conversion channels, the plurality of extraction channels extract the first gas species into the first cavity, A multi-plenum gas manifold in which the first cavity directs the first gas species from the plurality of extraction channels to the conversion channel.

12. The multi-plenum gas manifold according to claim 1, wherein the first channel set includes a source channel and a plurality of distribution channels, the plurality of distribution channels distribute the first gas species from the first cavity, A multi-plenum gas manifold in which the first cavity receives the first gas species from the source channel and distributes the first gas species to the plurality of distribution channels.

13. The multi-plenum gas manifold according to claim 1, wherein the second channel set includes a plurality of extraction channels and conversion channels, the plurality of extraction channels extract the second gas species into the second cavity, A multi-plenum gas manifold in which the second cavity directs the second gas species from the plurality of extraction channels to the conversion channel.

14. The multi-plenum gas manifold according to claim 1, wherein the second channel set includes a source channel and a plurality of distribution channels, the plurality of distribution channels distribute the second gas species from the second cavity, A multi-plenum gas manifold in which the second cavity receives the second gas species from the source channel and distributes the second gas species to the plurality of distribution channels.

15. The multi-plenum gas manifold according to claim 1, A multi-plenum gas manifold in which the second channel set is offset from the first channel set in at least one of an axial direction and a perpendicular direction.

16. The multi-plenum gas manifold according to claim 1, further, A multi-plenum gas manifold comprising a third plenum separated from the first plenum and the second plenum and including a third cavity and a third channel set.

17. The multi-plenum gas manifold according to claim 16, wherein the third cavity is radially adjacent to the first cavity and axially adjacent to the second cavity.

18. The multi-plenum gas manifold according to claim 16, wherein the third channel set includes a total of two channels.

19. The multi-plenum gas manifold according to claim 1, further comprising a plurality of couplers configured to be connected to the first channel set and the second channel set and connected to a plurality of conduits to transfer the first gas species and the second gas species between the multi-plenum gas manifold and a plurality of substrate processing stations.

20. A substrate processing system comprising the multi-plenum gas manifold according to claim 1, and a substrate processing chamber including a plurality of substrate processing stations, wherein the multi-plenum gas manifold transfers the first gas species and the second gas species between the multi-plenum gas manifold and the plurality of substrate processing stations.

21. The substrate processing system according to claim 20, further comprising a plurality of conduits, wherein the multi-plenum gas manifold includes a plurality of couplers connected to the first channel set and the second channel set, and the plurality of conduits are connected to the plurality of couplers to transfer the first gas species and the second gas species between the multi-plenum gas manifold and the plurality of substrate processing stations.

22. The substrate processing system according to claim 20, wherein the first channel set includes a plurality of extraction channels and conversion channels, the plurality of extraction channels are respectively connected to the plurality of substrate processing stations to extract the first gas species from the plurality of substrate processing stations to the first cavity, The first cavity directs the first gas species from the plurality of extraction channels to the conversion channel, a substrate processing system.

23. The substrate processing system according to claim 20, wherein the first channel set includes a source channel and a plurality of distribution channels, the plurality of distribution channels are respectively connected to the plurality of substrate processing stations, and distribute the first gas species from the first cavity to the plurality of substrate processing stations, the first cavity receives the first gas species from a gas source and distributes the first gas species to the plurality of distribution channels, a substrate processing system.

24. The substrate processing system according to claim 20, wherein the second channel set includes a plurality of extraction channels and a conversion channel, the plurality of extraction channels are respectively connected to the plurality of substrate processing stations, and extract the second gas species from the plurality of substrate processing stations to the second cavity, the second cavity directs the second gas species from the plurality of extraction channels to the conversion channel, a substrate processing system.

25. The substrate processing system according to claim 20, wherein the second channel set includes a source channel and a plurality of distribution channels, the plurality of distribution channels are respectively connected to the plurality of substrate processing stations, and distribute the second gas species from the second cavity to the plurality of substrate processing stations, the second cavity receives the second gas species from a gas source and distributes the second gas species to the plurality of distribution channels, a substrate processing system.

26. The substrate processing system according to claim 20, wherein the number of channels in the first channel set is less than or equal to the total number of substrate processing stations in the substrate processing chamber plus one, a substrate processing system.

27. The substrate processing system according to claim 20, wherein the number of channels N in the second channel set is less than or equal to the total number M of substrate processing stations in the substrate processing chamber plus one, a substrate processing system.

28. The substrate processing system according to claim 20, wherein the first channel set includes a plurality of extraction channels and a conversion channel, A substrate processing system, wherein the total number of extraction channels of the first plenum is less than or equal to the total number of substrate processing stations in the substrate processing chamber.

29. The substrate processing system according to claim 20, wherein the first channel set includes a source channel and a plurality of distribution channels, and a substrate processing system, wherein the total number of distribution channels of the first plenum is less than or equal to the total number of substrate processing stations in the substrate processing chamber.

30. The substrate processing system according to claim 20, wherein the second channel set includes a plurality of extraction channels and a conversion channel, and a substrate processing system, wherein the total number of extraction channels of the second plenum is less than or equal to the total number of substrate processing stations in the substrate processing chamber.

31. The substrate processing system according to claim 20, wherein the second channel set includes a source channel and a plurality of distribution channels, and a substrate processing system, wherein the total number of distribution channels of the second plenum is less than or equal to the total number of substrate processing stations in the substrate processing chamber.

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