Plasma chamber equipped with a swirl motion side gas feed

Abstract

The present invention relates to a plasma chamber provided with a swirl motion side gas feed, and includes a housing provided with a placement portion on which the wafer is placed, a first swirl motion side gas feed provided on a side surface of the housing for injecting gas into the housing, and a second swirl motion side gas feed provided on the side surface of the housing for injecting gas into the housing. The first swirl motion side gas feed and the second swirl motion side gas feed inject gas along the wall surface of the housing. The first swirl motion side gas feed injects gas on a plane extending in a direction parallel to the plane formed by the placement portion, and the second swirl motion side gas feed injects gas at an angle with respect to the plane extending in a direction parallel to the plane formed by the placement portion.

Description

Technical Field

[0001] The present invention relates to a plasma chamber provided with a swirl motion side gas feed. More specifically, by adjusting the design of the side gas feed that is provided on the side of the chamber and injects gas so as to form a downward swirl motion, it relates to a plasma chamber provided with a swirl motion side gas feed that can maintain a uniform etching rate inside the chamber.

Background Art

[0002] Generally, in the process of manufacturing semiconductors, it is very important to ensure uniformity, and the uniformity of the semiconductor can be ensured or adjusted in the etching process among the semiconductor manufacturing processes.

[0003] The etching process of a semiconductor can be carried out inside a plasma chamber. The plasma chamber forms plasma in the internal reaction space and uses the plasma to perform the etching process of the semiconductor.

[0004] At the upper part of the plasma chamber, a plasma source for forming plasma is provided. Representative examples of the plasma source include a capacitively coupled plasma (CCP) source and an inductively coupled plasma (ICP) source.

[0005] In the etching process, the gas distribution inside the plasma chamber can be an important factor for maintaining a uniform etching rate. Generally, to maintain a uniform etching rate, a shower head design is used in a chamber with a capacitively coupled plasma source, and a bottom gas feed (BGF), a center gas feed (CGF), or a side gas feed (SGF) is used in a chamber with an inductively coupled plasma.

[0006] Inductively coupled plasma (ICP) can increase the etching rate compared to capacitively coupled plasma (CCP). However, in the case of inductively coupled plasma (ICP), there are problems such as low selectivity and poor process repeatability.

[0007] Also, in the case of inductively coupled plasma (ICP), when the gas injected into the plasma chamber consists of heavy molecules, it is difficult to maintain a uniform etching rate through the center gas feed. Specifically, when using the center gas feed, although the etching rate can be improved by increasing the velocity in the z-direction (the lower direction of the chamber) due to heavy molecules, there is a problem that the uniformity of the etching rate deteriorates. Summary of the Invention Problems to be Solved by the Invention

[0008] The present invention is for solving the above-described problems, and more specifically, it relates to a plasma chamber provided with a swirl motion side gas feed that can maintain a uniform etching rate inside the chamber by adjusting the design of a side gas feed that injects gas so as to form a downward swirl motion on the side surface of the chamber.

Means for Solving the Problems

[0009] The plasma chamber provided with the swirl motion side gas feed of the present invention for solving the above-described problems is a plasma chamber in which plasma is formed to etch a wafer, and includes a housing provided with a placement portion on which the wafer is placed, a first swirl motion side gas feed provided on the side surface of the housing for injecting gas into the housing, and a second swirl motion side gas feed provided on the side surface of the housing for injecting gas into the housing. The first swirl motion side gas feed and the second swirl motion side gas feed inject gas along the wall surface of the housing. The first swirl motion side gas feed injects gas on a plane extending in a direction parallel to the plane formed by the placement portion, and the second swirl motion side gas feed injects gas at an angle with respect to the plane extending in a direction parallel to the plane formed by the placement portion.

[0010] The gas injected from the first swirl motion side gas feed and the second swirl motion side gas feed of the plasma chamber provided with the swirl motion side gas feed of the present invention for solving the above-described problems can be injected onto the wafer while forming a downward swirl motion inside the housing.

[0011] The velocity (v o ) of the gas injected from the second swirl motion side gas feed of the plasma chamber provided with the swirl motion side gas feed of the present invention for solving the above problems forms a plane extending in a direction parallel to the plane formed by the placement portion at the position where the second swirl motion side gas feed is provided in the housing, and for a cylindrical coordinate system (r, θ, z) with the point where the plane meets the center line of the housing as the origin, v o =(0, v θ , v z )(v z ≠0) can be achieved.

[0012] The velocity (v o ) of the gas injected from the first swirl motion side gas feed of the plasma chamber provided with the swirl motion side gas feed of the present invention for solving the above problems forms a plane extending in a direction parallel to the plane formed by the placement portion at the position where the first swirl motion side gas feed is provided in the housing, and for a cylindrical coordinate system (r, θ, z) with the point where the plane meets the center line of the housing as the origin, v o =(0, v θ , 0) can be achieved.

[0013] The gases injected from the first swirl motion side gas feed and the second swirl motion side gas feed of the plasma chamber provided with the swirl motion side gas feed of the present invention for solving the above problems can contain any one or more of fluorocarbon series (C x F y ), fluorohydrocarbon series (C x H y F z ), SF6, C3F6O, Ar, O2, N2.

[0014] The gas injected from the second swirl motion side gas feed of the plasma chamber provided with the swirl motion side gas feed of the present invention for solving the above-mentioned problems can include a gas having a molecular weight heavier than the gas injected from the first swirl motion side gas feed.

[0015] The position where the second swirl motion side gas feed is installed in the housing of the plasma chamber provided with the swirl motion side gas feed of the present invention for solving the above-mentioned problems can be installed above the position where the first swirl motion side gas feed is installed in the housing.

[0016] The gas injected from the second swirl motion side gas feed of the plasma chamber provided with the swirl motion side gas feed of the present invention for solving the above-mentioned problems includes any one or more of C4F8, C4F6, C3F8, C3F6, C2F6, SF6, and C3F6O, and the gas injected from the first swirl motion side gas feed can include any one or more of CF4, CHF3, Ar, O2, and N2.

[0017] The plasma chamber provided with the swirl motion side gas feed of the present invention for solving the above-mentioned problems is provided at the upper part of the housing, further includes a center gas feed for injecting gas inside the housing, and the gas injected from the first swirl motion side gas feed and the second swirl motion side gas feed can include a gas having a molecular weight heavier than the gas injected from the center gas feed.

[0018] The gas injected from the center gas feed of the plasma chamber provided with the swirl motion side gas feed of the present invention for solving the above-mentioned problems can include any one or more of O2, N2, and Ar.

[0019] The plasma chamber equipped with the swirl motion side gas feed of the present invention for solving the above-described problems further includes an injection motion side gas feed for injecting gas inside the housing, and the injection motion side gas feed can inject gas in the surface direction of the wafer placed on the placement portion or in the upper direction of the surface of the wafer.

[0020] The gas injected from the injection motion side gas feed of the plasma chamber equipped with the swirl motion side gas feed of the present invention for solving the above-described problems can include a gas having a molecular weight lighter than the gas injected from the first swirl motion side gas feed and the gas injected from the second swirl motion side gas feed.

[0021] The gas injected from the injection motion side gas feed of the plasma chamber equipped with the swirl motion side gas feed of the present invention for solving the above-described problems can include any one or more of Ar, O2, and N2.

[0022] The housing of the plasma chamber equipped with the swirl motion side gas feed of the present invention for solving the above-described problems is provided with a plurality of the first swirl motion side gas feeds and a plurality of the second swirl motion side gas feeds. Three or more of the plurality of the first swirl motion side gas feeds provided in the housing are provided at the same height to maintain the uniformity of etching from the placement portion, and three or more of the plurality of the second swirl motion side gas feeds provided in the housing can be provided at the same height from the placement portion.

[0023] The plasma formed in the internal space of the housing of the plasma chamber equipped with the swirl motion side gas feed of the present invention to solve the above problems contains ions and radicals, and the wafer can be etched by the synergy effect of the ions and the radicals.

Advantages of the Invention

[0024] The present invention relates to a plasma chamber equipped with a swirl motion side gas feed. By adjusting the design of the side gas feed provided on the side of the chamber to form a downward swirl motion and inject gas, there is an advantage that a uniform etching rate can be maintained inside the chamber.

[0025] In addition, the present invention has the advantage that by using a first swirl motion side gas feed that injects gas on a plane extending in a direction parallel to the plane formed by the mounting portion and a second swirl motion side gas feed that injects gas at an angle with respect to a plane extending in a direction parallel to the plane formed by the mounting portion, the uniformity of the etching rate can be improved while improving the etching rate.

[0026] At the same time, the present invention has the advantage that while simultaneously using the first swirl motion side gas feed, the second swirl motion side gas feed, the injection motion side gas feed, and the center gas feed, by injecting heavy molecule gas through the side gas feed, the etching rate can be improved while improving the uniformity of the etching rate.

Brief Description of the Drawings

[0027]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Modes for Carrying Out the Invention

[0028] This specification clarifies the scope of rights of the present invention, and explains the principles of the present invention and discloses embodiments so that those with ordinary knowledge in the technical field to which the present invention pertains can implement the present invention. The disclosed embodiments can be embodied in various forms.

[0029] Expressions such as "including" or "can include" that can be used in various embodiments of the present invention indicate the existence of the corresponding functions, operations, or components disclosed in the invention, and do not limit one or more additional functions, operations, or components. Also, in various embodiments of the present invention, terms such as "including" or "having" are intended to specify that there are features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, and it should not be understood that the existence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof is precluded in advance.

[0030] When it is mentioned that a certain component is "connected to" or "coupled to" another component, it should be understood that the certain component may be directly connected or coupled to the other component, but there may also be a new and different component between the certain component and the other component. On the other hand, when it is mentioned that a certain component is "directly connected to" or "directly coupled to" another component, it should be understood that there is no new and different component between the certain component and the other component.

[0031] Terms such as first, second, etc. used in this specification can be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

[0032] The present invention relates to a plasma chamber provided with a swirl motion side gas feed, and by adjusting the design of the side gas feed that is provided on the side of the chamber and injects gas to form a downward swirl motion, it relates to a plasma chamber provided with a swirl motion side gas feed that can maintain a uniform etch rate inside the chamber.

[0033] In a plasma chamber for etching a wafer, the variables that affect the etching process are the etchant, diluent, oxygen, pressure, source power, and bias power. In most cases of oxide etching, since the reaction is dominated by ions, it can be said that temperature does not have a significant impact on the etching process. Here, the variable that has the greatest impact on the etching rate is likely to be the bias power, and the next is the pressure. Also, the etching gas is a factor that affects the etching rate.

[0034] In the etching process, when the etching gas is incident perpendicularly to the plane formed by the placement portion on which the wafer is placed (the incident angle is 0 degrees), sputtering is strong and the etching rate is the highest. On the contrary, when the etching gas is incident laterally in a direction parallel to the plane formed by the placement portion on which the wafer is placed (the incident angle is 90 degrees), it can hardly contribute to the etching.

[0035] The center gas feed (CGF) provided at the upper part of the chamber for injecting gas has an incident angle close to 0 degrees, and the side gas feed (SGF) provided on the side surface of the chamber for injecting gas in the surface direction of the wafer can be formed with an incident angle of 30 to 60 degrees.

[0036] Here, when the side gas feed injects gas in a direction parallel to the chamber wall surface and the gas reaches the wafer while forming a swirl motion, the incident angle increases and the etching rate decreases, but the uniformity of the etching rate can be improved.

[0037] The plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention can maintain a uniform etch rate inside the chamber by adjusting the design of the side gas feed that injects gas so as to form a downward swirl motion. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0038] The plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention includes a housing 110, a first swirl motion side gas feed 120, and a second swirl motion side gas feed 130.

[0039] Referring to FIG. 1, the housing 110 is provided with a reaction space inside for etching the wafer 10 by plasma. The housing 110 can be the chamber outer wall of the plasma chamber according to an embodiment of the present invention and is provided with a space inside.

[0040] The housing 110 can be provided with a placement part 111 on which the wafer 10 is placed, and the wafer 10 can be loaded onto the placement part 111. When the wafer 10 is loaded inside the housing 110, the wafer 10 can be etched by the plasma formed inside the housing 110.

[0041] The placement part 111 can be a plate provided inside the housing 110 on which the wafer 10 is placed, and the placement part 111 can be a wafer chuck that places and supports the wafer 10.

[0042] According to an embodiment of the present invention, a plasma source 113 for forming plasma can be provided on the upper part of the housing 110. Referring to FIG. 1, the plasma source 113 can include a coil 114 and an RF power generator 115, and the coil 114 and the RF power generator 115 can form plasma inside the housing 110. Of course, a match box can be installed between the RF power generator 115 and the plasma coil to maximize the transmission of RF power.

[0043] The plasma chamber provided with a swirl motion side gas feed according to an embodiment of the present invention can further include a bias RF source 116 capable of applying a bias to the mounting portion 111. Referring to FIG. 1, the bias RF source 116 can apply a bias to the mounting portion 111 to apply a bias to the plasma during the etching process. Of course, a bias match box can also be installed in the bias RF source 116 for efficient power transmission.

[0044] The plasma chamber provided with a swirl motion side gas feed according to an embodiment of the present invention can solve the problems of the conventional method of using an inductively coupled plasma (ICP) source and improve it.

[0045] In addition, the plasma chamber provided with a swirl motion side gas feed according to an embodiment of the present invention can be a synergistic resonance ICP (SRICP) that utilizes resonance and synergy effects.

[0046] Specifically, the plasma formed in the internal space of the housing 110 of the plasma chamber equipped with the swirl motion side gas feed according to an embodiment of the present invention contains ions and radicals, and the wafer 10 can be etched by the synergy effect of the ions and the radicals.

[0047] Plasma is mainly composed of electrons, ions, and radicals. Examining the conventional method of etching a wafer with plasma in detail, the dominant species in the plasma etching process is formed by either ions or radicals. Specifically, in the conventional method of etching a wafer with plasma, Metal etch mainly uses radicals, and Oxide etch mainly uses ions.

[0048] The plasma chamber equipped with the swirl motion side gas feed according to an embodiment of the present invention is not one in which the dominant species is formed by either ions or radicals in the plasma etching process, but is one that can use ions and radicals simultaneously. However, it is not limited to this. The plasma chamber equipped with the swirl motion side gas feed according to an embodiment of the present invention can also be applied when only one of ions and radicals is used, and in this case, the uniformity of the etching rate can also be improved.

[0049] The plasma chamber equipped with the swirl motion side gas feed according to an embodiment of the present invention uses a process region in which ions and radicals act together to exhibit a synergy effect, rather than a reaction dominated by ions or a reaction dominated by radicals during the etching process.

[0050] More specifically, the plasma chamber equipped with the swirl motion side gas feed according to the embodiment of the present invention can improve the selectivity while maintaining a high etching rate by the resonance phenomenon and the synergy effect between ions and radicals while simultaneously using ions and radicals.

[0051] Referring to FIG. 2, the first swirl motion side gas feed 120 is provided on the side surface of the housing 110 and injects gas into the housing 110. The second swirl motion side gas feed 130 is provided on the side surface of the housing 110 and injects gas into the housing 110.

[0052] Referring to FIGS. 2 and 3, the housing 110 can be provided with a plurality of the first swirl motion side gas feeds 120. The first swirl motion side gas feed 120 includes a first nozzle 121 provided with a first nozzle hole 122 through which gas is injected. The housing 110 can be provided with a plurality of the first nozzles 121.

[0053] Referring to FIGS. 2 and 3, the housing 110 can be provided with a plurality of the second swirl motion side gas feeds 130. The second swirl motion side gas feed 130 includes a second nozzle 131 provided with a second nozzle hole 132 through which gas is injected. The housing 110 can be provided with a plurality of the second nozzles 131.

[0054] According to the embodiment of the present invention, the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can inject gas along the wall surface of the housing 110.

[0055] When the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 inject gas along the wall surface of the housing 110, the gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can be injected onto the wafer 10 while forming a downward swirl motion within the housing 110.

[0056] When the gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 contacts the wafer 10 while forming a downward swirl motion, even when the gas contacts the wafer 10, it will move additionally due to centrifugal force and a diffusion effect will occur. Due to such a diffusion effect, the gas reacts with nearby particles, so that the uniformity of the etching rate can be improved.

[0057] Referring to FIG. 4, when the first swirl motion side gas feed 120 injects gas along the wall surface of the housing 110, the first swirl motion side gas feed 120 may inject gas on a plane extending in a direction parallel to the plane formed by the placement portion 111.

[0058] Specifically, the first nozzle 121 of the first swirl motion side gas feed 120 extends along the side surface of the housing 110, and the gas injected from the first swirl motion side gas feed 120 is injected along the wall surface of the housing 110.

[0059] Referring to FIG. 4, the velocity (v) of the gas injected from the first swirl motion side gas feed 120 o)(The velocity vector) can be v = (0, v o , 0) with respect to the cylindrical coordinate system (r, θ, z) based on the position where the first swirl motion side gas feed 120 is provided in the housing 110. o =(0, v θ , 0).

[0060] More specifically, a plane is formed that extends in a direction parallel to the plane formed by the placement portion 111 at the position where the first swirl motion side gas feed 120 is provided in the housing 110. When a cylindrical coordinate system (r, θ, z) is defined with the point where the plane meets the center line 112 of the housing 110 as the origin, the velocity (v o ) (velocity vector) of the gas injected from the first swirl motion side gas feed 120 can be v = (0, v o , 0). o )(The velocity vector) is v o =(0, v θ , 0).

[0061] That is, the velocity vector of the gas injected from the first swirl motion side gas feed 120 can be injected in the θ direction while having no component in the r direction (while being 0). When gas is injected from the first swirl motion side gas feed 120 in such a manner, the first swirl motion side gas feed 120 can inject gas along the wall surface of the housing 110.

[0062] When gas is injected along the wall surface of the housing 110 via the first swirl motion side gas feed 120, the gas injected from the first swirl motion side gas feed 120 can be injected onto the wafer 10 while forming a downward swirl motion within the housing 110.

[0063] Referring to FIG. 5, when the second swirl motion side gas feed 130 injects gas along the wall surface of the housing 110, the second swirl motion side gas feed 130 may inject gas at an angle with respect to a plane extending in a direction parallel to the plane formed by the placement portion 111.

[0064] Specifically, the second nozzle 131 of the second swirl motion side gas feed 130 extends along the side surface of the housing 110, and the gas injected from the second swirl motion side gas feed 130 is injected along the wall surface of the housing 110.

[0065] Referring to FIG. 5, the velocity (v o )(velocity vector) of the gas injected from the second swirl motion side gas feed 130 is based on the position where the second swirl motion side gas feed 130 is provided in the housing 110, and with respect to the cylindrical coordinate system (r, θ, z), v o =(0, v θ , v z ). (Here, v z >0 or v z <0, and v z ≠0 can be the case.)

[0066] More specifically, a plane is formed that extends in a direction parallel to the plane formed by the placement portion 111 at the position where the second swirl motion side gas feed 130 is provided in the housing 110. When a cylindrical coordinate system (r, θ, z) is defined with the point where the plane meets the center line 112 of the housing 110 as the origin, the velocity (v o )(velocity vector) of the gas injected from the second swirl motion side gas feed 130 can be v o =(0, v θ , v z ).

[0067] That is, the velocity vector of the gas injected from the second swirl motion side gas feed 130 can be injected in the θ direction while having no component in the r direction (while being 0). When the gas is injected from the second swirl motion side gas feed 130 in such a manner, the second swirl motion side gas feed 130 can inject the gas along the wall surface of the housing 110.

[0068] The velocity vector v of the gas injected from the second swirl motion side gas feed 130 o =(0, v θ , v z ) where v z can be greater than or less than 0. (v z ≠0) That is, the second swirl motion side gas feed 130 can inject the gas upward or downward with respect to a plane extending in a direction parallel to the plane formed by the placement portion 111 at the position where the second swirl motion side gas feed 130 is provided in the housing 110. (v z >0 or v z <0)

[0069] When the gas is injected from the second swirl motion side gas feed 130 in such a manner, the gas injected from the second swirl motion side gas feed 130 can be injected onto the wafer 10 while forming a downward swirl motion in the housing 110.

[0070] According to an embodiment of the present invention, by injecting the gas in a plane extending in a direction parallel to the plane formed by the placement portion 111 at the position where the first swirl motion side gas feed 120 is provided in the housing 110 by the first swirl motion side gas feed 120, the uniformity of the etching rate can be improved.

[0071] However, when gas is injected in a plane extending in a direction parallel to the plane formed by the placement portion 111 at the position where the first swirl motion side gas feed 120 is provided to the housing 110 through the first swirl motion side gas feed 120, the uniformity of the etching rate can be improved, but it may be difficult to effectively improve the etching rate.

[0072] The plasma chamber provided with the swirl motion side gas feed according to an embodiment of the present invention can use the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 simultaneously in order to improve the etching rate while improving the uniformity of the etching rate.

[0073] According to an embodiment of the present invention, when gas is injected downward with respect to a plane extending in a direction parallel to the plane formed by the placement portion 111 at the position where the second swirl motion side gas feed 130 is provided to the housing 110 through the second swirl motion side gas feed 130, a downward angle is formed, and the etching rate can be more effectively improved.

[0074] Referring to FIG. 3, the housing 110 can be provided with a plurality of the first swirl motion side gas feeds 120 and a plurality of the second swirl motion side gas feeds 130.

[0075] According to an embodiment of the present invention, it is preferable that three or more of the plurality of the first swirl motion side gas feeds 120 provided to the housing 110 are provided at the same height from the placement portion 111. Also, it is preferable that three or more of the plurality of the second swirl motion side gas feeds 130 provided to the housing 110 are provided at the same height from the placement portion 111.

[0076] Referring to FIGS. 2 and 3, the plurality of first swirl motion side gas feeds 120 can be provided on a plane spaced from the placement portion 111 at the same height (h1) and extending in a direction parallel to the plane formed by the placement portion 111.

[0077] According to an embodiment of the present invention, preferably, three or more first swirl motion side gas feeds 120 are provided on a plane extending in a direction parallel to the plane formed by the placement portion 111.

[0078] The first swirl motion side gas feed 120 can inject gas along the wall surface of the housing 110. The gas injected from one first swirl motion side gas feed 120 receives a force from another first swirl motion side gas feed 120 to form a downward swirl motion.

[0079] At this time, if the number of the first swirl motion side gas feeds 120 provided on the plane extending in the direction parallel to the plane formed by the placement portion 111 is less than three, it becomes difficult to form a downward swirl motion due to the increased distance between one first swirl motion side gas feed 120 and another first swirl motion side gas feed 120.

[0080] Therefore, preferably, the number of the first swirl motion side gas feeds 120 provided on the plane extending in the direction parallel to the plane formed by the placement portion 111 is three or more. Referring to FIG. 3, n or more (n≧3) first swirl motion side gas feeds 120 can be provided in the housing 110.

[0081] However, not limited thereto, a plurality of the first swirl motion side gas feeds 120 may be provided at different heights from each other in the housing 110. A plurality of the first swirl motion side gas feeds 120 may be provided with three or more at a point separated by a specified height from the placement portion 111, and a plurality of the first swirl motion side gas feeds 120 may also be provided with three or more at a point separated by another specified height from the placement portion 111.

[0082] That is, when a plurality of the first swirl motion side gas feeds 120 are provided in the housing 110, three or more of the first swirl motion side gas feeds 120 can form a plurality of layers while forming one layer.

[0083] Referring to FIGS. 2 and 3, a plurality of the second swirl motion side gas feeds 130 can be provided on a plane that is separated from the placement portion 111 by the same height (h2) and extends in a direction parallel to the plane formed by the placement portion 111.

[0084] According to an embodiment of the present invention, it is preferable that three or more of the second swirl motion side gas feeds 130 are provided on a plane that extends in a direction parallel to the plane formed by the placement portion 111.

[0085] The second swirl motion side gas feed 130 can inject gas along the wall surface of the housing 110, and the gas injected from one of the second swirl motion side gas feeds 130 receives force from another one of the second swirl motion side gas feeds 130 to form a downward swirl motion.

[0086] At this time, if the number of the second swirl motion side gas feeds 130 provided on a plane extending in a direction parallel to the plane formed by the placement portion 111 is less than three, the distance between one of the second swirl motion side gas feeds 130 and another one of the second swirl motion side gas feeds 130 becomes long, making it difficult to form a downward swirl motion.

[0087] Therefore, the number of the second swirl motion side gas feeds 130 provided on a plane extending in a direction parallel to the plane formed by the placement portion 111 is preferably three or more. Referring to FIG. 3, n or more (n ≧ 3) of the second swirl motion side gas feeds 130 provided in the housing 110 can be provided.

[0088] However, it is not limited thereto, and a plurality of the second swirl motion side gas feeds 130 can also be provided at different heights from each other in the housing 110. Three or more of the plurality of the second swirl motion side gas feeds 130 can be provided at a point separated from the placement portion 111 by a specified height, and three or more of the plurality of the second swirl motion side gas feeds 130 can also be provided at a point separated from the placement portion 111 by another specified height.

[0089] That is, when a plurality of the second swirl motion side gas feeds 130 are provided in the housing 110, three or more of the second swirl motion side gas feeds 130 can form a plurality of layers while forming one layer.

[0090] The gas jetted from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 according to an embodiment of the present invention is a gas of a fluorocarbon series (C x F y )), a gas of a fluorohydrocarbon series (Cx H y F z It can contain one or more of the gases of (x, y, z are natural numbers), SF6, C3F6O, Ar, O2, N2.

[0091] Referring to FIGS. 2 and 3, the position where the second swirl motion side gas feed 130 is installed in the housing 110 can be installed above the position where the first swirl motion side gas feed 120 is installed in the housing 110. Specifically, the second swirl motion side gas feed 130 can be provided in the housing 110 at a position higher than the first swirl motion side gas feed 120.

[0092] According to an embodiment of the present invention, the gas injected from the second swirl motion side gas feed 130 can contain a gas having a molecular weight heavier than the gas injected from the first swirl motion side gas feed 120.

[0093] According to an embodiment of the present invention, the gas injected from the second swirl motion side gas feed 130 contains one or more of C4F8, C4F6, C3F8, C3F6, C2F6, SF6, C3F6O, and the gas injected from the first swirl motion side gas feed 120 can contain one or more of CF4, CHF3, Ar, O2, N2.

[0094] In the etching process of the wafer, etching of SiO2 and etching of masks such as photoresist (PR) and ACL (amorphous carbon layer) can be advanced. Here, the technology related to the etching of SiO2 and masks such as photoresist (PR) and ACL (amorphous carbon layer) is already a widely known technology, and detailed description is omitted.

[0095] At this time, in order to improve the selectivity, it is preferable to increase the etching rate of SiO2 and decrease the etching rate of masks such as photoresist (PR) and amorphous carbon layer (ACL). In order to increase the etching rate, it is desirable that the incident angle formed by the gas injected onto the wafer 10 and the wafer 10 is small. In order to decrease the etching rate, it is preferable that the incident angle formed by the gas injected onto the wafer 10 and the wafer 10 is large.

[0096] Here, if the incident angle formed by the gas injected onto the wafer 10 and the wafer 10 is 0 degrees, the gas is injected vertically and contacts the wafer 10. If the incident angle formed by the gas injected onto the wafer 10 and the wafer 10 is 90 degrees, the gas can contact the wafer 10 in a direction parallel to the plane formed by the wafer 10.

[0097] Since the first swirl motion side gas feed 120 injects gas on a plane extending in a direction parallel to the plane formed by the mounting portion 111 (the z-direction component is 0), the incident angle becomes large and the gas can contact the wafer 10. The second swirl motion side gas feed 130 forms an angle with the plane extending in a direction parallel to the plane formed by the mounting portion 111 (v z <0) and injects the gas at a downward angle. Therefore, the incident angle is smaller than that of the gas injected from the first swirl motion side gas feed 120, and the gas can contact the wafer 10.

[0098] In order to improve the etching rate of SiO2, it is desirable to inject gas with a heavy molecular weight so that the incident angle becomes small. In order to decrease the etching rate of masks such as photoresist (PR) and amorphous carbon layer (ACL), it is preferable to inject gas with a relatively light molecular weight so that the incident angle becomes large.

[0099] Via the first swirl motion side gas feed 120 that injects gas so that the incident angle becomes larger than that from the second swirl motion side gas feed 130, it is desirable to inject a gas for etching a mask such as photoresist (PR), ACL (amorphous carbon layer), etc., and it is preferable to inject a gas for etching SiO2 from the second swirl motion side gas feed 130.

[0100] Therefore, the gas injected from the second swirl motion side gas feed 130 desirably contains any one or more of C4F8, C4F6, C3F8, C3F6, C2F6, SF6, C3F6O, which are gases for etching SiO2, and the gas injected from the first swirl motion side gas feed 120 preferably contains any one or more of CF4, CHF3, Ar, O2, N2, which are gases for etching photoresist (PR).

[0101] Also, since the gas injected from the second swirl motion side gas feed 130 is a gas that improves the etching rate of SiO2, and the gas injected from the first swirl motion side gas feed 120 is a gas that reduces the etching rate of masks such as photoresist (PR), ACL (amorphous carbon layer), etc., the gas injected from the second swirl motion side gas feed 130 preferably contains a gas having a molecular weight heavier than that of the gas injected from the first swirl motion side gas feed 120.

[0102] At the same time, the gas injected from the second swirl motion side gas feed 130 is a gas that improves the rate of SiO2 etching, and the gas injected from the first swirl motion side gas feed 120 is a gas that reduces the etching rate of masks such as photoresist (PR) and ACL (amorphous carbon layer). Therefore, the position where the second swirl motion side gas feed 130 is installed in the housing 110 is preferably installed above the position where the first swirl motion side gas feed 120 is installed in the housing 110.

[0103] Only when the second swirl motion side gas feed 130 that injects gas at a downward angle is installed at a higher position than the first swirl motion side gas feed 120, can the rate of etching SiO2 be effectively improved while reducing the etching rate of masks such as photoresist (PR) and ACL (amorphous carbon layer).

[0104] However, it is not limited to this. If necessary, the second swirl motion side gas feed 130 can be installed at the same height as the first swirl motion side gas feed 120, or the second swirl motion side gas feed 130 can be installed at a lower height than the first swirl motion side gas feed 120.

[0105] The plasma chamber provided with the swirl motion side gas feed according to an embodiment of the present invention is provided at the upper part of the housing 110, and can further include a center gas feed 140 that injects gas into the housing 110.

[0106] When the gas injected into the plasma chamber consists of heavy molecules, if only the center gas feed is used, there is a problem that the uniformity of the etching rate deteriorates because the velocity in the z-direction (the lower direction of the housing) increases due to the heavy molecules.

[0107] Referring to FIG. 2, the plasma chamber provided with the swirl motion side gas feed according to the embodiment of the present invention can prevent the uniformity of the etching rate from deteriorating by adjusting the designs of the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 while using the center gas feed 140 together with the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130.

[0108] According to an embodiment of the present invention, the gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can include a gas having a molecular weight heavier than the gas injected by the center gas feed 140.

[0109] When injecting a gas of heavy molecules from the center gas feed 140, the uniformity of the etching rate cannot be improved. Therefore, the gas of heavy molecules is preferably injected through the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130.

[0110] Specifically, when using gases of heavy molecules such as CF4, C4F6, C4F8, C3F8, SF6, C3F6, and C3F6O, the gases of heavy molecules such as CF4, C4F6, C4F8, C3F8, SF6, C3F6, and C3F6O can be ejected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 to form a downward swirl motion, thereby improving the uniformity of the etching rate. According to an embodiment of the present invention, the gas ejected from the center gas feed 140 can contain any one or more of O2, N2, and Ar.

[0111] However, it is not limited thereto, and the gas ejected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 may not be heavier than the gas ejected from the center gas feed 140.

[0112] The gas ejected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can also be ejected from the center gas feed 140. That is, a part of the gas ejected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can be ejected from the center gas feed 140 while the flow rate is adjusted.

[0113] The plasma chamber provided with the swirl motion side gas feed according to an embodiment of the present invention can further include an injection motion side gas feed 150 for injecting gas inside the housing 110.

[0114] The injection motion side gas feed 150 may inject gas in the surface direction of the wafer 10 placed on the placement portion 111 or in the upper direction of the surface of the wafer 10. The injection motion side gas feed 150 may inject gas so as to be directed toward the wafer 10, rather than forming a swirl motion.

[0115] Referring to FIG. 6, the injection motion side gas feed 150 includes a nozzle 151 provided with nozzle holes 152 through which gas is injected, and a plurality of the nozzles 151 may be provided in the housing 110.

[0116] According to an embodiment of the present invention, the gas injected from the injection motion side gas feed 150 may include a gas having a molecular weight lighter than the gas injected from the first swirl motion side gas feed 120 and the gas injected from the second swirl motion side gas feed 130.

[0117] When a gas of a heavy molecule is injected from the injection motion side gas feed 150, the uniformity of the etching rate cannot be improved. Therefore, it is preferable that the gas of the heavy molecule be injected through the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130.

[0118] The gas injected from the injection motion side gas feed 150 may include any one or more of Ar, O2, and N2.

[0119] However, it is not limited thereto, and the gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 may not be heavier than the gas injected from the injection motion side gas feed 150.

[0120] The gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can also be injected from the injection motion side gas feed 150.

[0121] That is, a part of the gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can also be injected while the flow rate is adjusted from the injection motion side gas feed 150.

[0122] According to an embodiment of the present invention, the first swirl motion side gas feed 120, the second swirl motion side gas feed 130, the center gas feed 140, and the injection motion side gas feed 150 can be provided with a flow rate regulator (FRC, Flow ratio controller).

[0123] The flow rate and type of the gas injected from the first swirl motion side gas feed 120, the second swirl motion side gas feed 130, the center gas feed 140, and the injection motion side gas feed 150 can be adjusted via the flow rate regulator.

[0124] According to an embodiment of the present invention, the plurality of first swirl motion side gas feeds 120 and the plurality of second swirl motion side gas feeds 130 can be provided at different heights from each other in the housing 110.

[0125] A plurality of the first swirl motion side gas feeds 120 and a plurality of the second swirl motion side gas feeds 130 can be provided with three or more at a point separated from the placement portion 111 by a specified height, and a plurality of the first swirl motion side gas feeds 120 and a plurality of the second swirl motion side gas feeds 130 can also be provided with three or more at another point separated from the placement portion 111 by a specified height.

[0126] That is, when the housing 110 is provided with a plurality of the first swirl motion side gas feeds 120 and a plurality of the second swirl motion side gas feeds 130, three or more of the first swirl motion side gas feeds 120 form one layer, and three or more of the second swirl motion side gas feeds 130 form one layer, and a plurality of layers can also be formed. (At this time, the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can be provided at different positions from each other.)

[0127] According to an embodiment of the present invention, the lengths of the first nozzles 121 provided in the first swirl motion side gas feed 120 and the second nozzles 131 provided in the second swirl motion side gas feed 130 can be changed as required. Further, the sizes, numbers, and directions of the first nozzle holes 122 provided in the first swirl motion side gas feed 120 and the second nozzle holes 132 provided in the second swirl motion side gas feed 130 can be changed as required.

[0128] According to an embodiment of the present invention, the plasma formed in the reaction space of the housing 110 contains ions and radicals, and the wafer 10 can be etched by the synergistic effect of the ions and the radicals.

[0129] According to an embodiment of the present invention, the plasma formed in the reaction space of the housing 110 contains electrons, and the electron energy relaxation length (EERL) of the electrons can be smaller than the diameter of the housing.

[0130] The plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention can be advanced in the process region of Local Electron Kinetics. The conventional etching process was advanced in the process region of Nonlocal electron kinetics where the electron energy relaxation length (EERL) is always larger than the diameter of the process chamber.

[0131] However, the plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention can be advanced in the process region of Local Electron Kinetics where the electron energy relaxation length (EERL) is smaller than the diameter of the process chamber (the diameter of the housing 110).

[0132] Thereby, the plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention can make the plasma density at the end of the housing 110 higher than that at the center of the housing 110, and the etching rate can also be higher at the end of the housing 110 than at the center of the housing 110.

[0133] In the conventional etching process, a problem (low edge yield problem) may occur where etching is weakly performed at the edge of the wafer. However, the plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention can prevent the occurrence of the above problem by forming the etching rate at the end of the housing 110 to be higher than that at the center of the housing 110.

[0134] In the conventional etching process, in order to solve the problem of weak etching at the edge of the wafer (low edge yield problem), independent RF power is applied, or a heater, a lift device for preventing corrosion of the edge ring, etc. are used.

[0135] However, the plasma chamber provided with the swirl motion side gas feed according to the embodiment of the present invention can form the etching rate at the edge of the housing 110 higher than that at the center of the housing 110, so that it is not necessary to use a separate device. As a result, the manufacturing cost can be reduced and the yield can be expected to be improved.

[0136] The plasma chamber provided with the swirl motion side gas feed according to the embodiment of the present invention proceeds in the process region of Local Electron Kinetics, and the plasma density inside the housing 110 can be increased from the inside to the outside of the housing 110.

[0137] As a result, although the etching rate is low inside the housing 110, a concave etch rate profile in which the etching rate increases toward the outside of the housing 110 can be obtained. The concave etch rate profile can solve the low edge yeild problem in which the etching rate decreases at the edge of the housing 110.

[0138] However, when gases of heavy molecules such as CF4, C4F6, C4F8, C3F8, SF6, C3F6, and C3F6O are injected only through the center gas feed 140, a concave etch rate profile cannot be obtained. That is, when there is a gas of a heavy molecule, if the gas of the heavy molecule is injected from the center gas feed 140, the process region of Local Electron Kinetics may become ineffective.

[0139] The plasma chamber provided with the swirl motion side gas feed according to an embodiment of the present invention can inject a gas of a heavy molecule from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 in order to solve such problems.

[0140] According to an embodiment of the present invention, the gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can have a molecular weight heavier than the gas injected from the center gas feed 140. Since injecting a gas of a heavy molecule from the center gas feed 140 cannot improve the uniformity of the etching rate, it is preferable to inject the gas of the heavy molecule through the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130.

[0141] Specifically, when using gases of heavy molecules such as CF4, C4F6, C4F8, C3F8, SF6, C3F6, C3F6O, etc., the gases of heavy molecules such as CF4, C4F6, C4F8, C3F8, SF6, C3F6, C3F6O, etc. can be injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 to form a downward swirl motion, thereby improving the uniformity of the etching rate.

[0142] Here, the gases injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can have a molecular weight heavier than that of the gases injected from the center gas feed 140. However, a part of the gases injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 may not be heavier than the gases injected from the center gas feed 140, or may even be the same gas as the gases injected from the center gas feed 140.

[0143] That is, the gases of heavy molecules are injected through the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130, and general gases that are not gases of heavy molecules can be injected from all of the first swirl motion side gas feed 120, the second swirl motion side gas feed 130, and the center gas feed 140.

[0144] According to an embodiment of the present invention, the gases injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can be injected onto the wafer 10 while forming a downward swirl motion within the housing 110.

[0145] At this time, the gases injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can form a downward swirl motion while swirling clockwise or counterclockwise.

[0146] Also, the plurality of the first swirl motion side gas feeds 120 and the second swirl motion side gas feeds 130 can form a downward swirl motion while being injected in different directions from each other.

[0147] The plasma chamber provided with the swirl motion side gas feed according to an embodiment of the present invention uses the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 with inductively coupled plasma (ICP), and the gases injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can form a downward swirl motion.

[0148] The plasma chamber provided with the swirl motion side gas feed according to an embodiment of the present invention, in which the gases injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 form a downward swirl motion, can be applied to metal etch, oxide etch, and poly etch to improve the etch rate.

[0149] The plasma chamber equipped with the swirl motion side gas feed according to the embodiment of the present invention can be used in plasma processes for semiconductors and displays, but is not limited thereto. The plasma chamber equipped with the swirl motion side gas feed according to the embodiment of the present invention can of course be used in various processes using plasma processes other than semiconductors and displays.

[0150] In addition, the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 that inject gas so as to form a downward swirl motion can also be applied to plasma processes such as plasma deposition, PR stripping, and plasma doping.

[0151] The plasma chamber equipped with the swirl motion side gas feed according to the embodiment of the present invention can appropriately adjust the types and flow rates of the gases injected from the first swirl motion side gas feed 120, the second swirl motion side gas feed 130, the center gas feed 140, and the injection motion side gas feed 150 to increase the etching rate and at the same time improve the uniformity of the etching rate.

[0152] In addition, the plasma chamber equipped with the swirl motion side gas feed according to the embodiment of the present invention can appropriately adjust the types and flow rates of the gases injected from the first swirl motion side gas feed 120, the second swirl motion side gas feed 130, the center gas feed 140, and the injection motion side gas feed 150 to satisfy center-low etch rate and vertical etch profile, and can satisfy a high selectivity of masks such as photoresist (PR) and amorphous carbon layer (ACL).

[0153] Conventional plasma chambers adjusted the type of gas and the gas flow rate through the trial and error method. However, the plasma chamber equipped with the swirl motion side gas feed according to the embodiments of the present invention can improve the etching process performance by adjusting the designs of the first swirl motion side gas feed 120, the second swirl motion side gas feed 130, the center gas feed 140, and the injection motion side gas feed 150.

[0154] That is, the plasma chamber equipped with the swirl motion side gas feed according to the embodiments of the present invention can appropriately distribute gas to the first swirl motion side gas feed 120, the second swirl motion side gas feed 130, the center gas feed 140, and the injection motion side gas feed 150 according to the characteristics of the gas, and adjust the gas flow rate, thereby improving the etching process performance.

[0155] The plasma chamber equipped with the swirl motion side gas feed according to the embodiments of the present invention described above has the following effects.

[0156] The plasma chamber equipped with the swirl motion side gas feed according to the embodiments of the present invention has the advantage that it can maintain a uniform etching rate inside the chamber by adjusting the design of the side gas feed that injects gas on the side of the chamber to form a downward swirl motion.

[0157] In addition, the plasma chamber equipped with the swirl motion side gas feed according to the embodiment of the present invention has a first swirl motion side gas feed that injects gas on a plane extending in a direction parallel to the plane formed by the placement portion, and a second swirl motion side gas feed that forms an angle with respect to the plane extending in a direction parallel to the plane formed by the placement portion and injects gas. By using these, there is an advantage that the uniformity of the etching rate can be improved while improving the etching rate.

[0158] At the same time, the plasma chamber equipped with the swirl motion side gas feed according to the embodiment of the present invention uses the first swirl motion side gas feed, the second swirl motion side gas feed, the injection motion side gas feed, and the center gas feed at the same time, and injects heavy molecular gas through the side gas feed. By doing so, there is an advantage that the uniformity of the etching rate can be improved while improving the etching rate.

[0159] As described above, the present invention has been described with reference to one embodiment shown in the drawings, but this is merely exemplary, and those having ordinary knowledge in the art will understand that various modifications and variations of the embodiments are possible from now on. Therefore, the true technical protection scope of the present invention should be determined by the technical idea of the appended claims.

Claims

1. In a plasma chamber in which plasma is formed to etch a wafer, a housing provided with a placement portion on which the wafer is placed, a first swirl motion side gas feed provided on a side surface of the housing and injecting gas into the housing, a second swirl motion side gas feed provided on a side surface of the housing and injecting gas into the housing, wherein the first swirl motion side gas feed and the second swirl motion side gas feed inject gas along a wall surface of the housing, the first swirl motion side gas feed injects gas on a plane extending in a direction parallel to a plane formed by the placement portion, the second swirl motion side gas feed injects gas at an angle with respect to a plane extending in a direction parallel to a plane formed by the placement portion, and a plasma chamber provided with a swirl motion side gas feed is characterized thereby.

2. The gas injected from the first swirl motion side gas feed and the second swirl motion side gas feed is injected onto the wafer while forming a downward swirl motion in the housing, and the plasma chamber provided with the swirl motion side gas feed according to claim 1 is characterized thereby.

3. The velocity (v ｏ ) of the gas injected from the second swirl motion side gas feed is A plane extending in a direction parallel to a plane formed by the placement portion is formed at a position where the housing is provided with the second swirl motion side gas feed, For a cylindrical coordinate system (r, θ, z) with the origin at the point where the center line of the plane and the housing meet, v ｏ = (0, v θ , v ｚ )(v ｚ ≠ 0). A plasma chamber equipped with the swirl motion side gas feed according to claim 1, characterized in that

4. The velocity (v ｏ ) of the gas injected from the first swirl motion side gas feed is A plane extending in a direction parallel to a plane formed by the placement portion is formed at a position where the housing is provided with the first swirl motion side gas feed, For the cylindrical coordinate system (r, θ, z) with the origin at the point where the center line of the plane and the housing meet, v ｏ = (0, v θ , 0), characterized in that the plasma chamber is provided with the swirl motion side gas feed according to claim 3.

5. The gas injected from the first swirl motion side gas feed and the second swirl motion side gas feed A gas of the fluorocarbon series (C ｘ F ｙ ), a gas of the fluorohydrocarbon series (C ｘ H ｙ F ｚ ), SF ６ , C ３ F ６ O, Ar, O ２ , N ２ The plasma chamber provided with the swirl motion side gas feed according to claim 1, characterized by containing any one or more of them.

6. The gas injected from the second swirl motion side gas feed includes a gas having a molecular weight heavier than the gas injected from the first swirl motion side gas feed, and the plasma chamber provided with the swirl motion side gas feed according to claim 1 is characterized thereby.

7. The position where the second swirl motion side gas feed is installed in the housing is The plasma chamber provided with the swirl motion side gas feed according to claim 1, wherein the housing is installed above the position where the first swirl motion side gas feed is installed.

8. The gas injected from the second swirl motion side gas feed is C ４ F ８ 、C ４ F ６ 、C ３ F ８ 、C ３ F ６ 、C ２ F ６ 、SF ６ 、C ３ F ６ O, and contains one or more of them, The gas injected from the first swirl motion side gas feed is CF ４ , CHF ３ , Ar, O ２ , N ２ The plasma chamber provided with the swirl motion side gas feed according to claim 1, characterized in that it contains any one or more of them.

9. It is provided above the housing and further includes a center gas feed for injecting gas into the housing, The gas injected from the first swirl motion side gas feed and the second swirl motion side gas feed includes a gas having a molecular weight heavier than the gas injected from the center gas feed, characterized in that the plasma chamber is provided with the swirl motion side gas feed according to claim 1.

10. The gas injected from the center gas feed contains at least one of O ２ , N ２ , and Ar. The plasma chamber provided with the swirl motion side gas feed according to claim 9 is characterized in that it has such a composition.

11. It further includes an injection motion side gas feed for injecting gas into the housing, The injection motion side gas feed injects gas in the surface direction of the wafer placed on the placement portion or in the upper direction of the surface of the wafer, characterized in that the plasma chamber is provided with the swirl motion side gas feed according to claim 1.

12. The gas injected from the injection motion side gas feed is The plasma chamber provided with the swirl motion side gas feed according to claim 11, characterized in that the gas injected from the injection motion side gas feed includes a gas having a molecular weight lighter than the gas injected from the first swirl motion side gas feed and the gas injected from the second swirl motion side gas feed.

13. The gas injected from the injection motion side gas feed contains any one or more of Ar, O ２ , N ２ The plasma chamber provided with the swirl motion side gas feed according to claim 12, characterized in that it contains any one or more of them.

14. The housing is provided with a plurality of the first swirl motion side gas feeds and a plurality of the second swirl motion side gas feeds, Three or more of the plurality of the first swirl motion side gas feeds provided in the housing are provided at the same height from the placement portion, The plasma chamber provided with the swirl motion side gas feed according to claim 1, characterized in that three or more of the plurality of the second swirl motion side gas feeds provided in the housing are provided at the same height from the placement portion.

15. The plasma formed in the internal space of the housing includes ions and radicals, The plasma chamber provided with the swirl motion side gas feed according to claim 1, wherein the wafer is etched by a synergistic effect of the ions and the radicals.

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