Smart Dynamic Load Simulator for RF Power Supply Control System

Abstract

The embodiments disclosed in this specification include a dynamic load simulator. In one embodiment, the dynamic load simulator includes an impedance load, a reverse matching circuit, and a smart RF controller. In one embodiment, the smart RF controller includes a dynamic load generator and a reverse matching controller.

Description

Cross - reference to related applications

[0001] This application claims the priority of U.S. Patent Application No. 17 / 843,830, filed on June 17, 2022, the entire content of which is incorporated herein by reference.

Technical Field

[0002] Embodiments relate to the field of semiconductor manufacturing, and more particularly to a dynamic load simulator for RF power supply control.

Background Art

[0003] In semiconductor processing steps such as plasma etching or plasma deposition, an RF supply system is used to provide RF power to a chamber. Usually, the RF supply system includes an RF generator and an RF matching circuit (sometimes simply called a matcher). The RF matching circuit can match the input impedance to the impedance of the plasma chamber, thereby minimizing or eliminating reflected power. In this way, a higher level of power can be sent to the plasma chamber. Impedance matching between the power supply and the load of the processing chamber is a very important requirement for the performance and safety of RF power supply and wafer processing. The load of the chamber is a key design factor that determines the operating envelope and dynamics of the power supply system.

[0004] Currently, the development of RF systems relies on some fixed or variable dummy loads. The use of such systems enables basic verification of RF systems. However, such a simple impedance load structure has limitations because it does not exactly match the impedance load characteristics of the plasma chamber. Correspondingly, extensive and intensive process chamber tests are required for comprehensive system verification. This leads to problems in terms of schedule, resources, and cost. Generally, it is quite costly to take the processing chamber offline to perform system verification of an RF system.

Summary of the Invention

[0005] The embodiments disclosed in this specification include a dynamic load simulator. In one embodiment, the dynamic load simulator includes an impedance load, a reverse matching circuit, and a smart RF controller. In one embodiment, the smart RF controller includes a dynamic load generator and a reverse matching controller.

[0006] Embodiments may also include a smart RF controller. In one embodiment, the smart RF controller may include a dynamic load generator configured to provide a trace of the impedance of a load on a reverse matching circuit coupled to a fixed dummy load.

[0007] Embodiments may also include a processing tool, which includes an RF supply system comprising an RF generator and an RF matching circuit. In one embodiment, a switch is used to selectively couple the RF supply system to a plasma chamber or a dynamic load simulator, and the dynamic load simulator includes a dummy load, a reverse matching circuit, and an RF controller. In one embodiment, the RF controller includes a dynamic load generator and a reverse matching controller. BRIEF DESCRIPTION OF THE DRAWINGS

[0008]

Figure 1

Figure 2A

Figure 2B

Figure 3

Figure 4

Figure 5

Figure 6

DETAILED DESCRIPTION OF THE INVENTION

[0009] The systems described herein include a dynamic load simulator for RF power supply control. In the following description, numerous specific details are set forth in order to provide a comprehensive understanding of the embodiments. It will be apparent to those skilled in the art that the embodiments can be practiced without these specific details. In other instances, well-known aspects have not been described in detail so as not to unnecessarily obscure the embodiments. Further, it should be understood that the various embodiments shown in the accompanying figures are exemplary representations and are not necessarily drawn to scale.

[0010] As described above, impedance matching between the power supply and the load of the processing chamber is a very important requirement for the performance and safety of RF power supply and substrate processing. However, in existing structures, large-scale verification is required with the processing chamber electrically coupled to the power supply and the matcher. Since the processing chamber is used for power supply verification, the cost of verifying the power supply is high. That is, while being used for verification, the processing chamber needs to be taken offline, and the processing chamber cannot be used to manufacture production substrates or wafers. Generally, when taking the chamber offline for verification, it is necessary to address issues related to scheduling, resource allocation, and cost.

[0011] Correspondingly, embodiments disclosed herein include a smart dynamic load simulator. The smart dynamic load simulator includes a dummy load, a reverse matcher, and a smart RF controller. The smart RF controller controls the reverse matcher, and as a result, generates a trace of variable impedance from the dummy load. The trace of variable impedance may be similar to the trace of the impedance of the processing chamber in operation. Thus, the RF supply system (i.e., the RF generator and the RF matcher) may be electrically coupled to the smart dynamic load simulator instead of the processing chamber. Therefore, the processing chamber does not need to be taken offline for verification.

[0012] In one embodiment, the trace of impedance may be generated using various approaches. In one approach, the trace of the impedance of the plasma chamber in function is recorded. Then, the recorded trace of impedance may be utilized by the smart RF controller. In other embodiments, the trace of impedance may be generated using a chamber modeling algorithm. That is, the smart RF controller functions as a digital (impedance) twin of the processing chamber, and as a result, can provide a trace of impedance that matches the trace of impedance that the chamber would exhibit under certain specific parameters. This is particularly beneficial when corner cases are being investigated. Instead of pushing the processing chamber to its limits, extreme conditions can be simulated to verify the RF supply system.

[0013] In addition, it should be understood that the smart dynamic load simulator can be used in various applications. For example, the smart dynamic load simulator can be used throughout the life cycle of a control system, such as during the development phase, the test phase, and the operation phase. Correspondingly, the cost of the smart dynamic load simulator can be distributed among multiple different use cases.

[0014] Referring now to FIG. 1, a schematic diagram of a semiconductor processing tool 100 according to one embodiment is shown. In one embodiment, the semiconductor processing tool 100 may include an RF generator 105. The RF generator 105 can have any suitable RF generator structure. For example, the RF generator 105 can operate at any desired frequency or frequency range. In a particular embodiment, the RF generator 105 can operate at 13.56 MHz, which is a common frequency for plasma generation. However, it should be understood that other frequencies can also be used.

[0015] In one embodiment, the RF generator 105 can be electrically coupled to an RF matching circuit 107. The RF matching circuit 107 can be referred to as an RF matcher or simply a matcher. In one embodiment, the matcher 107 can include a circuit (e.g., a capacitor, an inductor, etc.) configured to provide a desired input impedance to the RF generator 105. In a particular embodiment, the capacitor can include a variable capacitor configured to have a capacitance value that is changed by an actuator or the like. The matcher 107 can be used to set an impedance equal to the impedance of the load. The impedance of the load can be determined by the operating conditions of the processing chamber 120.

[0016] In one embodiment, the processing chamber 120 can be any semiconductor processing chamber. For example, the processing chamber 120 can be an etching tool, a deposition tool, or a surface treatment tool, etc. In a particular embodiment, the processing chamber 120 can be a plasma chamber. For example, a plasma 124 can be generated within the chamber housing 121. The plasma 124 can be induced by one or more electrodes. For example, the support 122 can include an electrode electrically coupled to the RF matcher 107. A second electrode 123 can be provided on the side opposite the support 122. The second electrode 123 can also be coupled to an RF source (not shown).

[0017] In one embodiment, the support 122 can include a susceptor or other chuck structure. For example, the support 122 can include an electrostatic chuck structure to fix the substrate 125. However, in some embodiments, other chucking structures (e.g., vacuum chucking) can also be used. In one embodiment, the support 122 can also include a thermal control system for controlling the temperature of the substrate 125. For example, cooling channels and / or resistive heaters can be included within the support 122.

[0018] In one embodiment, the substrate 125 can be of any suitable substrate form factor and / or material. For example, the substrate 125 can be a wafer with a diameter of 300 mm, a diameter of 450 mm, or any other standard wafer form factor. In certain embodiments, the substrate 125 can include silicon or any other semiconductor material. In one embodiment, layers can be deposited on the substrate 125, or the layers on the substrate 125 can be in the process of being etched. For example, the layers commonly used in semiconductor manufacturing include oxides (e.g., silicon oxide), nitrides (e.g., silicon nitride), and metals (e.g., copper, tungsten, etc.).

[0019] Referring now to FIG. 2A, a schematic diagram of a smart dynamic load simulator 240 according to one embodiment is shown. In one embodiment, the smart dynamic load simulator 240 can include an impedance load. For example, a dummy load 245 can be provided. In some embodiments, the dummy load 245 can be a static load. That is, the impedance of the dummy load 245 can remain substantially constant. However, in other embodiments, the dummy load 245 can be variable. The impedance of the dummy load 245 can be a real impedance value or a complex impedance value. In one embodiment, the dummy load 245 can include a thermal regulation feature. For example, fan cooling or liquid cooling can be used to control the temperature of the dummy load 245. In one embodiment, the dummy load 245 can have any specific impedance value.

[0020] In one embodiment, the smart dynamic load simulator 240 may further include a reverse matching circuit 244. The reverse matching circuit 244 may also be referred to as a reverse matcher 244. The reverse matching circuit 244 may have a circuit similar to that of the matcher 107 described in more detail above. For example, the reverse matcher 244 may include a capacitor, an inductor, etc. In certain embodiments, the capacitor may include a variable capacitor configured to have a capacitance value changed by an actuator or the like. In yet another embodiment, the capacitor may be a solid state variable capacitor. Since the change in capacitance of the solid state variable capacitor is faster than that of a capacitor including a physical actuator, the use of the solid state variable capacitor may facilitate the feedback tuning of the load generator. Thus, the impedance trace can be generated to match the impedance of the chamber 120 even when the dummy load 245 is constant. As described in more detail below, this enables the development and testing of the RF supply system without using the plasma chamber 120.

[0021] In one embodiment, the reverse matching circuit 244 may be electrically coupled to an RF supply system (not shown). The reverse matching circuit 244 may be coupled to the RF supply system for developing and / or testing the RF supply system. In some embodiments, the reverse matching circuit 244 may also be used during the operation of the RF supply system while processing a substrate in the processing chamber. As described in more detail below, the RF supply system can be switched between the plasma chamber and the reverse matching circuit 244 of the smart dynamic load simulator 240.

[0022] In one embodiment, the smart dynamic load simulator 240 may further include a smart RF controller 241. The smart RF controller 241 may include a dynamic load generator 243 and a reverse matching controller 242. In one embodiment, the dynamic load generator 243 may include an algorithm or model that generates an output of the load impedance based on an input including the value of the dummy load, the parameters of the RF supply system, and / or the parameters of other desired or measured processes. In one embodiment, the dynamic load generator 243 may operate in various modes. In the first mode, the dynamic load generator 243 may operate with a constant load. For example, the constant load can be equal to the impedance load of the dummy load 245.

[0023] In the second mode, the dynamic load generator 243 may operate with a variable static load. That is, the impedance load can be set to a static value, and this static value can change over time.

[0024] In the third mode, the dynamic load generator 243 may operate according to a trace of a predetermined impedance load. For example, the impedance load of the processing chamber 120 can be recorded during the process recipe. Then, the recorded impedance load can be reproduced by the dynamic load generator 244.

[0025] In the fourth mode, the dynamic load generator 243 can operate in a fully dynamic mode to mimic the plasma process while linking the load impedance to the main process variables including the RF power supply parameters. In such an embodiment, the dynamic load generator 243 can function as an impedance twin (i.e., a digital twin) of the plasma chamber 120. Such an embodiment can be particularly beneficial when fully validating the control system because the process envelope can be pushed to the limit without the risk of damaging the actual plasma chamber 120.

[0026] In one embodiment, a reverse matching controller 242 can be used to ensure the fidelity of the output of the impedance of the load defined by the dynamic load generator 243. The reverse matching controller 242 can include any suitable control algorithm. In one embodiment, the reverse matching controller 242 can include an open-loop controller. Control to the open-loop reverse matching controller 242 can be performed by calculations based on a calibration table and / or a circuit model. In other embodiments, the reverse matching controller 242 can include a closed-loop controller. The closed-loop controller can rely on real-time feedback to provide the necessary control. In such an embodiment, a high-bandwidth loop including a high-speed actuator within the reverse matching circuit 244 may be required to perform the closed-loop control. In yet another embodiment, an iterative learning controller can be used for the reverse matching circuit 242. In the iterative controller, the first execution of the process recipe can be used as feedback, and as a result, the second execution of the process recipe can be controlled more efficiently. The use of an iterative control system can reduce the need for a high-bandwidth loop.

[0027] In the illustrated embodiment, all the components of the smart dynamic load simulator 240 are shown within a single housing. That is, the smart dynamic load simulator 240 can be a fully integrated single device with a single housing surrounding all the components. However, it should be understood that in other embodiments, the various components can be housed in various enclosures. That is, the smart dynamic load simulator 240 can include a plurality of individual components coupled to each other (e.g., by a communication link or by an electrical coupling such as a coaxial cable, etc.). For example, the dummy load 245 can be present in a housing different from that of the reverse matching circuit 244.

[0028] Referring now to FIG. 2B, a schematic diagram of a smart dynamic load simulator 240 according to an additional embodiment is shown. As shown, the smart dynamic load simulator 240 of FIG. 2B can be substantially similar to the smart dynamic load simulator 240 of FIG. 2A, except for the reverse matching circuit 244. In particular, the reverse matching circuit 244 can further include a sensor 246. In certain embodiments, the sensor 246 is a voltage and current (VI) sensor. The VI sensor 246 can be incorporated into the reverse matching circuit 244 for monitoring or control purposes. This ensures the accuracy of the impedance of the load provided to the RF transmission system. In one embodiment, the VI sensor 246 can be any sensor structure. For example, the VI sensor 246 can include a conductive ring through which a coaxial cable from the RF supply system passes.

[0029] Referring now to FIG. 3, a schematic diagram of a processing tool 300 according to one embodiment is shown. In one embodiment, the processing tool 300 can include an RF supply system, a chamber 320, and a smart dynamic load simulator 340. The RF supply system can include an RF generator 305 and an RF matcher 307. The RF generator 305 and the RF matcher 307 can be substantially similar to the functions of the same names described in more detail previously. In one embodiment, the RF generator 305 and the RF matcher 307 can be communicatively connected to the smart dynamic load simulator 340 as shown by the double-arrow connection lines. The RF generator 305 can also be communicatively connected to a tool controller 350. The tool controller 350 can be a computer system that provides control of processing parameters, executes recipes, enables tuning of the apparatus, and the like.

[0030] In one embodiment, the output of the RF supply system can be coupled to switch 309. Switch 309 can be used to switch the output between chamber 320 and smart dynamic load simulator 340. In one embodiment, chamber 320 can be substantially similar to chamber 120 described in more detail above. For example, chamber 320 can be a plasma processing chamber (not shown) for etching, depositing, or plasma treating a substrate. When the RF supply system is electrically coupled to chamber 320, the substrate can be processed according to a predetermined recipe.

[0031] When switch 309 is set to electrically couple the RF supply system to smart dynamic load simulator 340, a development and / or tuning process can be executed on tool 300. In certain embodiments, the RF supply system is electrically coupled to reverse matching circuit 344. Reverse matching circuit 344 provides a simulated impedance load to RF matcher 307. In this way, RF matcher 307 can be developed or adjusted without the need to execute a process recipe on chamber 320. This reduces damage and / or wear to chamber 320.

[0032] Although embodiments including physical switch 309 are shown, it should be understood that in some embodiments, the switch can be a logical switch. For example, smart dynamic load simulator 340 can be a connector compatible with the chamber, but smart dynamic load simulator 340 can be located at a different position than chamber 320. For example, chamber 340 can be located in a clean room, and smart dynamic load simulator 340 can be located in a normal laboratory. This makes it possible to further reduce operation costs / concerns.

[0033] In one embodiment, the smart dynamic load simulator 340 may include a dummy load 345. The dummy load 345 may be a static load. That is, the impedance of the dummy load 345 may remain substantially constant. However, in other embodiments, the dummy load 345 may be variable. The impedance of the dummy load 345 may be a real impedance value or a complex impedance value. In one embodiment, the dummy load 345 may include a thermal regulation feature. For example, fan cooling or liquid cooling etc. may be used to control the temperature of the dummy load 345. In one embodiment, the dummy load 345 may have any specific impedance value.

[0034] In one embodiment, the smart dynamic load simulator 340 may further include a reverse matching circuit 344. The reverse matching circuit 344 may have a circuit including a capacitor, an inductor, etc. In a particular embodiment, the capacitor may include a variable capacitor configured to have a capacitance value changed by an actuator etc. The reverse matching circuit 344 makes it possible to provide a variable impedance even when the dummy load 345 is constant. Thus, an impedance trace may be generated to match the impedance of the chamber 320.

[0035] In one embodiment, the smart dynamic load simulator 340 may further include a smart RF controller 341. The smart RF controller 341 may include a dynamic load generator 343 and a reverse matching controller 342. In one embodiment, the dynamic load generator 343 may include an algorithm or model that generates an output of the load impedance based on an input including the value of the dummy load, parameters of the RF supply system, and / or parameters of other desired or measured processes. In one embodiment, the dynamic load generator 343 can operate in various modes (e.g., a constant load, a variable static load, a trace of a predetermined impedance load, or a fully dynamic mode). The description of each mode is described in more detail above.

[0036] In one embodiment, the reverse matching controller 342 can be used to ensure the fidelity of the output of the impedance of the load defined by the dynamic load generator 343. The reverse matching controller 342 can include any suitable control algorithm (e.g., an open-loop controller, a closed-loop controller, or an iterative learning controller). Descriptions of various control algorithms have been provided in more detail previously.

[0037] Referring now to FIG. 4, a schematic diagram of a software stack 460 for a smart dynamic load simulator according to one embodiment is shown. In one embodiment, the software stack 460 can include an operating system 461. The operating system 461 can be any suitable operating system. For example, Windows, Raspberry Pi, Linux, macOS, etc. can be used for the operating system 461. In one embodiment, a device driver 462 can also be included in the software stack 460. Various drivers 462 can be used for the various components of the smart dynamic load simulator. For example, a driver for a dummy load, a driver for a reverse RF matcher, and a driver for a smart RF controller can be provided.

[0038] In one embodiment, the software stack 460 may further include a plasma load model 463. The plasma load model 463 may function with a dynamic load generator. In one embodiment, the plasma load model 463 can be a model used to replicate a previously recorded impedance trace. For example, a process recipe can be executed within a processing chamber. The impedance of the processing chamber throughout the recipe can be recorded. Thereafter, the plasma load model 463 can reproduce the impedance trace using a reverse RF matcher. In other embodiments, the plasma load model 463 can be an impedance twin of the processing chamber. For example, the plasma load model 463 can be a physics-based model used to mimic a plasma process while linking the impedance of the load to key process variables including RF power supply parameters.

[0039] When used as an impedance twin, the plasma load model 463 enables improvement of the tuning process and the development process. This is because the plasma load model 463 can safely execute corner conditions that could damage or cause excessive wear within the processing chamber if actually executed.

[0040] In one embodiment, the software stack 460 may further include the algorithm of the reverse matching controller 464. In one embodiment, the reverse matching controller 464 may include one or more different control algorithms. In one embodiment, the reverse matching controller 464 includes an open-loop controller. The open-loop controller can utilize calculations based on a calibration table and / or a circuit model. In additional embodiments, the reverse matching controller 464 may include a closed-loop control algorithm. In the closed-loop control algorithm, it is possible to provide real-time feedback to improve control. In yet another embodiment, an iterative learning control algorithm may be included in the reverse matching controller 464. The iterative learning control algorithm can use the first process execution as an input to improve the control of successive process executions.

[0041] In one embodiment, the software stack 460 may also include a data acquisition (DAQ), storage, and processing module 465. The module 465 can use any suitable circuit, memory, processor, etc. The module 465 can operate in cooperation with the plasma load model 463 and the reverse matching circuit 464 to perform various processes by a smart dynamic load simulator.

[0042] In one embodiment, the software stack 460 may further include a user interface (UI) 466. The user interface 466 can be provided, such as on a screen, for the user to interact with the smart dynamic load simulator. The UI 466 can be designed to have any desired layout or other UI functions.

[0043] Referring now to FIG. 5, there is shown a diagram illustrating the functionality of a smart dynamic load simulator 540, according to one embodiment. In particular, FIG. 5 shows various operating modes that may be used with the smart dynamic load simulator 540. That is, the smart dynamic load simulator 540 can be used for a development application 571, a test application 572, and an operational application 573.

[0044] In one embodiment, the system development application 571 can be used to develop the control system of an RF supply system. By connecting a replaceable simulator and plasma chamber to the RF control system under development, the lead time for development and / or deployment can be significantly reduced. The need for access to the chamber is reduced, resulting in the improvement of the above development period. That is, since the chamber is not required, the development process can be executed with a much more flexible schedule. Further, according to the embodiment, it is possible for the design of the chamber process and the design / verification of the RF control system to overlap. Since the RF control system does not require a dedicated processing chamber for development, basically, the RF control system can be designed simultaneously with the design of the chamber process.

[0045] In one embodiment, the test application 572 also provides an improvement over existing solutions. For example, the ease and safety of testing corner conditions and stress tests are improved. Normally, testing corner conditions and stress tests push the processing chamber to its limits in terms of design. Therefore, such tests may cause excessive wear and / or damage to the processing chamber. Instead of using physical tests of the chamber, a smart dynamic load simulator can reproduce the impedance of such tests to test the RF control system. Correspondingly, when the embodiments disclosed herein are used, it is possible to reduce the test cost and shorten the test period.

[0046] Furthermore, the embodiments disclosed herein enable the use of a smart dynamic load simulator during the operation application 573. For example, a dynamic load model can be used to replace the need for an output sensor (e.g., a VI sensor) on the matching circuit. Accordingly, the cost of the RF control system can be reduced.

[0047] Accordingly, the embodiments disclosed herein include a smart dynamic load simulator that can be used to model the impedance of a processing chamber for development, testing, or application purposes. Generally, a smart dynamic load simulator includes a dummy load, a reverse matcher, and a smart RF controller. The smart RF controller controls the reverse matcher, and as a result, generates a trace of variable impedance from the dummy load. The trace of variable impedance can be similar to the trace of the impedance of the operating processing chamber. For example, it can mimic the impedance of the chamber recorded during operation, or use an impedance twin function to generate a trace of impedance. In this way, the RF supply system (i.e., the RF generator and the RF matcher) can be electrically coupled to the smart dynamic load simulator instead of the processing chamber. Accordingly, the processing chamber does not need to be taken offline for verification, nor does it need to be fully developed before the development of the RF transmission system.

[0048] Referring now to FIG. 6, a block diagram showing an exemplary computer system 600 of a processing tool is shown in accordance with one embodiment. The exemplary computer system 600 can be used for one or more of the systems described in more detail above. For example, the exemplary computer system can be used for a tool controller and / or a smart RF controller. In one embodiment, the computer system 600 is connected to a processing tool and controls the processing within the processing tool. The computer system 600 can be connected (e.g., networked) to other machines in a local area network (LAN), an intranet, an extranet, or the Internet. The computer system 600 can operate as a server or a client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. The computer system 600 can be a personal computer (PC), a tablet PC, a set-top box (STB), a personal digital assistant (PDA), a mobile phone, a web appliance, a server, a network router, a switch or a bridge, or any machine capable of executing a set of instructions (sequentially or otherwise) that specify actions to be taken by that machine. Further, although only a single machine is shown as the computer system 600, the term "machine" should also be construed to include any collection of machines (e.g., computers) that individually or jointly execute a set of (or multiple sets of) instructions to perform any one or more of the methods described herein.

[0049] The computer system 600 may include a computer program product or software 622 having a non-transitory machine-readable medium storing instructions, where the instructions can be used to program the computer system 600 (or other electronic device) to execute the processes according to the embodiments. The machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer). For example, the machine-readable (e.g., computer-readable) medium includes machine-readable (e.g., computer-readable) storage media (e.g., read only memory (ROM), random access memory (RAM), magnetic disk storage media, optical storage media, flash memory devices, etc.), machine-readable (e.g., computer-readable) transmission media (propagating signals in electrical, optical, acoustic, or other forms (e.g., infrared signals, digital signals, etc.)), etc.

[0050] In one embodiment, the computer system 600 includes a system processor 602, a main memory 604 (e.g., dynamic random access memory (DRAM) such as read only memory (ROM), flash memory, synchronous DRAM (SDRAM), or Rambus DRAM (RDRAM)), a static memory 606 (e.g., flash memory, static random access memory (SRAM), etc.), and a secondary memory 618 (e.g., a data storage device), which communicate with each other via a bus 630.

[0051] System processor 602 represents one or more general-purpose processing devices, such as a micro-system processor or a central processing unit. More specifically, the system processor can be a complex instruction set computing (CISC) micro-system processor, a reduced instruction set computing (RISC) micro-system processor, a very long instruction word (VLIW) micro-system processor, a system processor that executes other instruction sets, or a system processor that executes a combination of instruction sets. The system processor 602 can also be one or more special-purpose processing devices, such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal system processor (DSP), or a network system processor. The system processor 602 is configured to execute processing logic 626 for performing the processes described herein.

[0052] The computer system 600 may further include a system network interface device 608 for communicating with other devices or machines via a network 661. Additionally, the computer system 600 may include peripheral ports (e.g., serial ports or USB ports, etc.) for communicating with other components external to the computer system 600. The computer system 600 may also include a video display unit 610 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 612 (e.g., a keyboard), a cursor control device 614 (such as a mouse), and a signal generation device 616 (e.g., a speaker).

[0053] The secondary memory 618 may include a machine-accessible storage medium 632 (or, more specifically, a computer-readable storage medium) storing one or more instruction sets (e.g., software 622) that implement any one or more of the methods or functions described herein. This software 622 may also reside, in whole or at least in part, within the scope of the main memory 604 and / or within the scope of the system processor 602 while being executed by the computer system 600, and the main memory 604 and the system processor 602 may also constitute a machine-readable storage medium. The software 622 may further be transmitted or received over the network 620 via the system network interface device 608. In one embodiment, the network interface device 608 may operate using RF coupling, optical coupling, acoustic coupling, or inductive coupling.

[0054] In an exemplary embodiment, the machine-accessible storage medium 632 is shown as a single medium, but the term "machine-readable storage medium" should be construed to include a single medium or a plurality of media (e.g., a centralized database or a distributed database, and / or associated caches and servers) storing one or more instruction sets. The term "machine-readable storage medium" should also be construed to include any medium capable of storing or encoding a set of instructions for execution by a machine, the set of instructions being capable of causing the machine to execute any one or more of the methods. Thus, the term "machine-readable storage medium" should be construed to include, but not be limited to, solid-state memory, optical media, and magnetic media.

[0055] In the foregoing specification, specific exemplary embodiments have been described. It will be apparent that various modifications may be made to the exemplary embodiments without departing from the scope of the following claims. Correspondingly, this specification and the drawings are to be regarded as illustrative rather than limiting.

Claims

1. A dynamic load simulator, an impedance load, a reverse matching circuit, a smart RF controller, wherein the smart RF controller includes a dynamic load generator, and a reverse matching controller A dynamic load simulator.

2. The dynamic load simulator according to claim 1, wherein the reverse matching circuit further includes a sensor.

3. The dynamic load simulator according to claim 2, wherein the sensor is a voltage sensor and a current sensor.

4. The dynamic load simulator according to claim 1, wherein the impedance load is a fixed dummy load.

5. The dynamic load simulator according to claim 4, wherein the reverse matching circuit is configured to adjust the fixed dummy load to a desired impedance load different from the fixed dummy load.

6. The dynamic load simulator according to claim 1, wherein the impedance load is thermally controlled using a cooling system.

7. The dynamic load simulator according to claim 1, wherein the dynamic load generator is configured to generate an output of the impedance of the load based on an input including the impedance load, parameters of the RF supply system, and parameters of other measured processes.

8. The dynamic load simulator according to claim 7, wherein the reverse matching controller is configured to guarantee the fidelity of the output of the impedance of the load generated by the dynamic load generator.

9. The dynamic load simulator according to claim 1, wherein the impedance load, the reverse matching circuit, and the smart RF controller are components within a single housing.

10. The dynamic load simulator according to claim 1, wherein the impedance load, the reverse matching circuit, and the smart RF controller are separate components within different housings.

11. The dynamic load simulator according to claim 1, wherein the dynamic load simulator is selectively coupled to an RF supply system.

12. The dynamic load simulator according to claim 11, wherein the RF supply system is configured to be switched between a processing chamber and the dynamic load simulator.

13. A smart RF controller, A dynamic load generator configured to provide a trace of the impedance of a load on a reverse matching circuit coupled to a fixed dummy load, a reverse matching controller, and a smart RF controller comprising the same. **Claim 14** The smart RF controller according to claim 13, wherein its hardware is implemented as a computer system. **Claim 15** The smart RF controller according to claim 13, wherein the trace of the impedance of the load is a pre-recorded trace of the impedance of the plasma chamber. **Claim 16** The smart RF controller according to claim 13, wherein the trace of the impedance of the load is generated by a dynamic model of the plasma chamber. **Claim 17** The smart RF controller according to claim 13, wherein the reverse matching controller is an open-loop controller, a closed-loop controller, or configured to use iterative learning. **Claim 18** A processing tool, an RF supply system comprising an RF generator, and an RF matching circuit an RF supply system, a switch for selectively coupling the RF supply system to a plasma chamber or a dynamic load simulator, and a dynamic load simulator comprising a dummy load, a reverse matching circuit, an RF controller comprising a dynamic load generator, and a reverse matching controller an RF controller, and a processing tool comprising the same. **Claim 19** The processing tool according to claim 18, wherein the dynamic load generator is configured to generate a simulated impedance trace that matches the trace of the impedance of the operating plasma chamber. **Claim 20** The processing tool according to claim 19, wherein the simulated impedance trace is a pre-recorded trace of the impedance of the operating plasma chamber, or the simulated impedance trace is generated by a dynamic model of the plasma chamber.

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