Optoelectronic module and method for manufacturing an optoelectronic module

Abstract

A photoelectronic module and a method for manufacturing a photoelectronic module. The photoelectronic module (1) includes a carrier (2), a semiconductor body (3) provided on the carrier and emitting radiation, and an optical element (4) provided in the beam path of the semiconductor body (3), wherein at least one component (3, 4) of the group consisting of the semiconductor body (3) and the optical element (4) is connected to the carrier (2) via a connection portion (5) including a metal nanostructure. A method for manufacturing the photoelectronic module will also be described.

Description

Technical Field

[0001] The present invention relates to an optoelectronic module and a method for manufacturing the optoelectronic module.

[0002] In particular, it is an object to realize an optoelectronic module with improved efficiency and / or extended lifespan. Further, as a method for manufacturing an optoelectronic module, an efficient and simple method is disclosed.

Summary of the Invention

[0003] According to at least one embodiment, the optoelectronic module comprises a carrier. The carrier has a function of mechanically stabilizing further components of the optoelectronic module, in particular. Further, the further components may be electrically contacted via the carrier. The carrier may be, for example, a connection carrier comprising a conductive path and / or a contact portion for electrical contact of the further components.

[0004] According to at least one embodiment, the optoelectronic module comprises a semiconductor body that emits radiation. In other words, the optoelectronic module is a module that emits radiation, in particular. Preferably, the semiconductor body that emits radiation emits electromagnetic radiation in the visible spectral range, for example in the wavelength range of red, green, or blue, and / or electromagnetic radiation in the near-infrared or UV spectral range. In particular, the semiconductor body is a laser diode. In particular, the semiconductor body comprises an emission surface that emits electromagnetic radiation.

[0005] Preferably, the semiconductor body that emits radiation is disposed on the carrier. As a result, the carrier can be used for electrical contact of the semiconductor body that emits radiation.

[0006] According to at least one embodiment, the optoelectronic module comprises an optical element. In particular, the optical element is arranged in the beam path of a semiconductor body that emits radiation. For example, the optical element is configured to affect the electromagnetic radiation emitted by a semiconductor body that emits radiation. The optical element can be, for example, an optical element that utilizes diffraction, reflection, refraction, polarization, or birefringence.

[0007] According to at least one embodiment, at least one component of the semiconductor body and the optical element is connected to the carrier via a connection part. In particular, the connection part is configured to mechanically and / or electrically couple the component to the carrier. For example, the connection part is in direct contact with the carrier, the semiconductor body, and / or the optical element. Alternatively, additional components may be arranged between the semiconductor body and the carrier and / or between the optical element and the carrier so as to be in direct contact with the connection part. For example, a submount is arranged between the semiconductor body and the carrier, and the submount is directly connected to the carrier via, for example, a connection part.

[0008] The connection part comprises a metal nanostructure. Thus, the nanostructure contains a metal or is formed from a metal. For example, the nanostructure has metallic properties. In particular, the nanostructure has dimensions such as length, width, and / or diameter in the range of 10 nanometers or more and 10 micrometers or less, particularly in the range of 10 nanometers or more and 1 micrometer or less.

[0009] In particular, the connection part does not contain an organic component. In other words, when attaching the semiconductor body that emits radiation and / or the optical element to the carrier, an organic binder, such as an organic adhesive, is not used.

[0010] According to at least one embodiment, a optoelectronic module includes a carrier, a semiconductor body provided on the carrier and emitting radiation, and an optical element in a beam path of the semiconductor body, and at least one component of the semiconductor body and the optical element is connected to the carrier via a connection portion including a metal nanostructure. In particular, the semiconductor body and the optical element are each connected to the carrier via a connection portion.

[0011] As a result, such an optoelectronic module can be used in the field of projection, in-vehicle fields such as, for example, a head-up display (HUD) and a lidar system, and / or the field of sensor technology.

[0012] According to at least one embodiment, the optoelectronic module includes a housing. In particular, the housing hermetically seals the semiconductor body. As a result, the housing at least partially prevents the semiconductor body from being damaged by external influences such as oxygen and moisture. Thereby, the lifespan of the optoelectronic module can be extended.

[0013] According to at least one embodiment, the semiconductor body includes or is a laser diode. In particular, for the laser diode, the maximum value of the emission spectrum is in a range of at most 550 nanometers, in a range of 550 nanometers or more and 620 nanometers or less, or in a range of 620 nanometers or more and 680 nanometers or less. In other words, the laser diode emits, for example, light from blue to blue-green, light from green to yellow-green, or red light.

[0014] According to at least one embodiment, the optoelectronic module includes at least one additional semiconductor body. All features and embodiments already described with respect to the semiconductor body apply in particular to this at least one additional semiconductor body.

[0015] In particular, the optoelectronic module comprises a total of three semiconductor bodies. At least one further semiconductor body is, for example, a laser diode or comprises a laser diode. Preferably, the further semiconductor body has a different emission maximum in its emission spectrum than the semiconductor body. For example, the optoelectronic module comprises a first semiconductor body having an emission maximum in the blue spectral range, a second semiconductor body having an emission maximum in the green spectral range, and a third semiconductor body having an emission maximum in the red spectral range. Thereby, an optoelectronic module that emits white mixed light can be realized.

[0016] According to at least one exemplary embodiment, the optoelectronic module does not contain organic components, at least within the housing.

[0017] In particular, in an optoelectronic module comprising a laser diode having an emission maximum of up to 550 nanometers, organic contaminants may be deposited on the emission surface of the semiconductor body due to the high energy density of the emitted radiation and / or due to high beam divergence. This may shorten the lifespan of the optoelectronic module. Since the optoelectronic module is formed so as not to contain organic components, at least within the housing, shortening of the lifespan of the optoelectronic module due to contamination of the emission surface of the semiconductor body is particularly prevented.

[0018] According to the optoelectronic module of at least one embodiment, the optical element is selected from the group consisting of a lens, a prism, a collimating lens, a beam combiner, a polarizing filter, a birefringent crystal, and a photonic integrated circuit. In particular, the beam combiner is a dichroic beam combiner. The photonic integrated circuit is known in English as "photonic integrated circuit" (abbreviated as PIC).

[0019] According to the optoelectronic module of at least one embodiment, the metal nanostructure contains or consists of nanowires.

[0020] According to the optoelectronic module of at least one embodiment, the nanowires have a distance of at most 10 micrometers, particularly at most 1 micrometer, for example at most 0.1 micrometer. That is, this distance is the length of the shortest straight connection line between two adjacent nanowires.

[0021] According to the optoelectronic module of at least one embodiment, at least a part of the nanowires are in contact with each other. In other words, the nanowires are arranged in a connection part so as to ensure stable contact between two nanowires. As an effect, a mechanically stable connection part can be formed. In particular, the nanowires are connected.

[0022] According to the optoelectronic module of at least one embodiment, the metal nanostructure contains at least one metal from the group consisting of Au, Ag, Cu, or consists of at least one metal. In particular, Au, Ag, and Cu are characterized by excellent chemical stability. Also, these metals can be easily deformed.

[0023] According to the optoelectronic module of at least one embodiment, an alloy is arranged between the metal nanostructures. This alloy particularly contains the metal of the nanostructure. Also, this alloy particularly realizes a firmly joined connection part.

[0024] According to the optoelectronic module of at least one embodiment, a further component of the alloy is selected from the group consisting of Ga, In, Hg, Sn. In particular, Ga, In, Hg, and Sn have a low melting point in metallic form. As an effect, these elements can be easily introduced into the connection part. Furthermore, Ga, In, Hg, and Sn form an alloy with the metal of the nanostructure, for example, Au, Ag, and Cu, and in particular, the melting point of the alloy exceeds 250 °C, preferably 260 °C. As an effect, an optoelectronic module having high temperature resistance and / or solderable as an SMD is provided. Here, SMD means Surface Mounted Device.

[0025] According to the optoelectronic module of at least one embodiment, the alloy includes a material selected from the group consisting of AuGa, AuIn, AuHg, AgGa, AgIn, AgHg, and CuSn.

[0026] Furthermore, a method for manufacturing an optoelectronic module is disclosed. In particular, the optoelectronic module described herein is manufactured using the above method. Therefore, all features and embodiments described with respect to the optoelectronic module are also applicable to the method, and vice versa.

[0027] According to the method of at least one embodiment, a carrier having a first connection element is provided. In particular, the connection element includes a metal nanostructure. For example, the metal nanostructure includes or consists of nanowires. The first connection element covers the carrier, for example, partially or completely.

[0028] According to the method of at least one embodiment, a component is provided. This component includes a second connection element having a metal nanostructure. In particular, the metal nanostructure includes or consists of nanowires. The metal nanostructure of the first connection element and the metal nanostructure of the second connection element are formed, for example, identically or differently. The second connection element covers at least partially the surface of the component connected to the carrier.

[0029] According to the method of this at least one embodiment, components are actively adjusted on a carrier. When actively adjusting a component, the component is positioned and / or aligned on the carrier, in particular using optical output parameters. For example, the intensity, spectral distribution, beam divergence and / or polarization degree of the electromagnetic radiation emitted by the optoelectronic module during operation are used as optical output parameters. Here, positioning means, for example, the lateral and / or horizontal displacement of the component with respect to the main extension plane of the carrier. In particular, the alignment of the component includes rotation about one of the main axes of the component. In particular, in active adjustment, the component is aligned around six axes.

[0030] As a result, active adjustment enables accurate mounting of the component on the carrier. Thereby, component-specific variations can be corrected, and the production of defective optoelectronic modules can be prevented.

[0031] According to the method of this at least one embodiment, the carrier and the component are connected. In particular, a connection part is thereby created. In particular, the connection part includes a first connection element and a second connection element. For example, when actively adjusting a component on a carrier, the carrier and the component are pre-connected. Alternatively, it is also possible to connect the carrier and the component only after active adjustment. When the metal nanostructure includes nanowires, the nanowires of the first connection element and the second connection element are connected to each other, in particular during connection.

[0032] According to at least one embodiment, a method for manufacturing an optoelectronic module includes providing a carrier including a first connection element including a metal nanostructure; providing a component having a second connection element including a metal nanostructure; actively adjusting the component on the carrier; connecting the carrier and the component, A method in which a connection part including the first connection element and the second connection element is formed.

[0033] In particular, the connection part including the first connection element and the second connection element does not contain organic components, which may initially cause performance degradation and ultimately lead to malfunction of the optoelectronic module. Therefore, the connection part without organic components can extend the life of the optoelectronic module.

[0034] In the manufacturing methods of other optoelectronic modules, components and carriers are connected using an organic adhesive. However, when using an organic adhesive, it is necessary to actively adjust the components first without applying the organic adhesive, remove the components again, apply the organic adhesive, move the components to a predetermined position, and then cure the organic adhesive. In the method described herein, as a result, the components are moved to the desired position only once by active adjustment and joined to the carrier. As a result, the number of optoelectronic modules that can be produced per hour using this method can be increased compared to other methods.

[0035] According to the method of this at least one embodiment, the component is selected from the group consisting of a semiconductor body, an optical element, a submount, and an interposer. In particular, the submount is a component used for electrical contact and / or mechanical stabilization of the semiconductor body. The interposer is a mechanical component that can be used, for example, to adjust the height of the optical element.

[0036] According to the method of this at least one embodiment, the connection part has stability at a temperature of at least 250°C. Here, stable means that the connection part shows little or only slight chemical changes and / or mechanical deformations of the composition of the connection part at that temperature. In other words, the connection part has high-temperature resistance. As a result, an optoelectronic module that can be soldered as an SMD can be realized.

[0037] According to the method of at least one embodiment, when connecting a carrier and a component, a compression agent is introduced into the connection part. The compression agent forms an alloy with the materials of the first connection element and the second connection element. Preferably, the compression agent forms an alloy with the material of the metal nanostructure.

[0038] When introducing the compression agent, the materials of the first connection element and the second connection element are partially dissolved in the compression agent in particular to form an alloy. This alloy preferably has a melting point higher than that of the compression agent. Thereby, isothermal solidification of the alloy may occur. Also, the melting point of this alloy enables the alloy to cure at a low temperature, for example, a temperature below 100°C. The fact that the materials of the first connection element and the second connection element are only partially dissolved in the compression agent means that the connection part with the metal nanostructure can be distinguished from a soldered joint. For example, the difference between the connection part and the soldered joint can be confirmed using a scanning electron microscope.

[0039] As a result, the compression agent, and thus the alloy, fills the cavity existing particularly between the metal nanostructures of the first connection element and the metal nanostructures of the second connection element. Thereby, a firmly joined connection is formed between the component and the carrier.

[0040] In other optoelectronic modules, solder is particularly used for a firm connection between a carrier and a component. When using solder, the carrier and / or the component may be subjected to high thermal and / or mechanical loads. This high thermal and / or mechanical load is caused, for example, by the high temperature required for soldering or the stress and strain generated during soldering. Also, for example, the solder material used, such as solder paste, may contain organic components that need to be removed to protect the optoelectronic module from contamination.

[0041] As an effect, by using the first connecting element and the second connecting element in combination with a compression agent, high thermal and / or mechanical loads on the optoelectronic module can be prevented. Furthermore, the connection part produced in this way contains no organic components in particular, has low freezing stress, and also has a low bimetal effect.

[0042] The bimetal effect is confirmed, for example, when two metal layers having different coefficients of thermal expansion are bonded to each other. Due to the difference in the coefficients of thermal expansion, when heated, one metal layer expands more than the other, and as a result, the two layers curve.

[0043] According to the method of this at least one embodiment, the nanowires in the first connecting element and the nanowires in the second connecting element are brought closer to each other so as to have a distance of, for example, 10 micrometers or less, particularly 1 micrometer or less, for example 0.1 micrometer or less, in active adjustment. For this reason, active adjustment without backlash is performed. For example, after inserting the compression agent, a mechanically stable connection part can be obtained.

[0044] According to the method of this at least one embodiment, the compression agent is melted before being introduced into the connection part. In other words, a liquid compression agent is introduced into the connection part. In this way, in particular, the cavity between the metal nanostructure of the first connecting element and the metal nanostructure of the second connecting element can be filled almost completely or completely with the compression agent and the alloy.

[0045] According to the method according to at least one embodiment, the compression agent is selected from the group consisting of Ga, In, Hg, Sn, and alloys thereof. In particular, Ga, In, Hg, Sn, and alloys thereof have a low melting point. As an effect, introduction into the connection part becomes easy. Also, the thermal load on the optoelectronic module and its components can be reduced.

[0046] According to the method of this at least one embodiment, the first connecting element has dimensions that are larger than those of the second connecting element, particularly in a plan view. In particular, the first connecting element has an area that is larger than that of the second connecting element in a plan view. As an effect, for example, by expanding the second connecting element, the connection part can be expanded and formed to be as large as possible.

[0047] According to the method of this at least one embodiment, the first connecting element and / or the second connecting element has a rectangular shape, particularly a square shape, particularly in a plan view. However, the first connecting element and / or the second connecting element may have other shapes such as an ellipse, particularly an oval or circular shape, or a polygon such as a hexagon in a plan view.

Brief Description of the Drawings

[0048] In the following exemplary embodiments, with reference to the drawings, further advantageous embodiments, designs, and further modifications of the method for manufacturing a optoelectronic module will be described.

Figure 1A

Figure 1B

Figure 2A

Figure 2B

Figure 3A

Figure 3B

Figure 3C

Figure 4A

Figure 4B

Embodiments for Carrying Out the Invention

[0049] In each drawing, the same or similar elements, or elements having the same effect, are given the same reference numerals. The drawings and each element shown in the drawings are not necessarily at the actual scale. Conversely, each element, particularly the layer thickness, may be shown exaggerated for the purpose of making it clearer and / or easier to understand.

[0050] FIG. 1A shows an optoelectronic module 1 according to an embodiment. The optoelectronic module 1 includes a carrier 2 on which a semiconductor body 3 and an optical element 4 are disposed. The semiconductor body 3 and the optical element 4 are hermetically sealed by a housing 6.

[0051] Here, the semiconductor body 3 includes a laser diode having a maximum emission value of up to 550 nanometers. The electromagnetic radiation is emitted from the semiconductor body 3 through the emission surface 31. The semiconductor body 3 is mounted on a submount 7 directly connected to the carrier 2 via a connection portion 5. In other words, the semiconductor body 3 is connected to the carrier 2 via the connection portion 5. Further, an additional connection portion 5 may be disposed between the semiconductor body 3 and the submount 7. Alternatively, the semiconductor body 3 is directly connected to the carrier 2 via the connection portion 5. In this case, the submount 7 is not disposed between the semiconductor body 3 and the carrier 2.

[0052] The connection part 5 includes a metal nanostructure. The metal nanostructure is a nanowire. Here, the nanowire has a distance of at most 1 micrometer, or the nanowires are at least partially in contact with each other. In particular, the nanowires are connected. The main extending direction of the nanowire is transverse, in particular perpendicular, to the main extending plane of the connection part 5. The metal nanostructure contains, or consists of, Au, Ag and / or Cu. An alloy is arranged between the metal nanostructures. This alloy includes the Au, Ag and / or Cu of the metal nanostructure and a further component. The further component of the alloy is selected from the group consisting of Ga, In, Hg, Sn. Thus, the alloy can include, for example, AuGa, AuIn, AuHg, AgGa, AgIn, AgHg, or CuSn.

[0053] The optical element 4 is arranged in the beam path of the semiconductor body 3 of the optoelectronic module 1 in FIG. 1A. In other words, the optical element 4 is arranged on the side where the emission surface 31 of the semiconductor body 3 is provided. The optical element 4 is, for example, a prism, a collimating lens, or a beam splitter. An interposer 8 is arranged between the optical element 4 and the carrier 2. Further, a connection part 5' is arranged between the interposer 8 and the carrier 2. In other words, the optical element 4 is connected to the carrier 2 via the connection part 5' between the interposer 8 and the carrier 2. Alternatively, the optical element 4 is directly connected to the carrier 2 via the connection part 5'. This means that there is no interposer 8 arranged between the optical element 4 and the carrier 2.

[0054] The connection part 5' between the interposer 8 and the carrier 2 is formed in the same way as the connection part 5 between the submount 7 and the carrier 2, in particular. Alternatively, the connection part 5' includes an alloy of a material different from the metal nanostructure and / or the connection part 5. The metal nanostructure of the connection part 5' contains Au, Ag and / or Cu. The alloy of the connection part 5' includes the Au, Ag and / or Cu of the metal nanostructure and a further component such as Ga, In, Hg or Sn. In this example, the metal nanostructure is a nanowire having a main extending direction that is transverse, in particular perpendicular, to the main extending plane of the connection part 5'.

[0055] Figure 1B is a schematic plan view of the optoelectronic module 1. In particular, Figure 1B shows the optoelectronic module 1 of Figure 1A in a plan view. A total of three semiconductor bodies 3, 3', 3'' are arranged on the carrier 2, and these are connected to the carrier 2 via the connection part 5. Submounts 7, 7', 7'' are arranged between the carrier 2 and each semiconductor body 3, 3', 3''. The semiconductor bodies 3, 3', 3'' here are provided with laser diodes. The optical elements 4, 4', 4'' are located in the beam paths of the semiconductor bodies 3, 3', 3''. The optical elements 4, 4', 4'' are connected to the carrier 2 by the connection part 5'. The electromagnetic radiation emitted by each of the semiconductor bodies 3, 3', 3'' is different. In particular, the semiconductor body 3 emits electromagnetic radiation from the blue spectral range, the semiconductor body 3' emits electromagnetic radiation from the red spectral range, and the semiconductor body 3'' emits electromagnetic radiation from the green spectral range.

[0056] Figures 2A and 2B show a method for manufacturing the optoelectronic module 1 according to an embodiment. First, a carrier 2 having a first connection element 9 and a component 10 having a second connection element 11 are provided (Figure 2A). The first connection element 9 at least partially covers the carrier 2. The first connection element 9 and the second connection element 11 include metal nanostructures, preferably nanowires containing Au. The first connection element 9 on the carrier 2 has a larger dimension than the second connection element 11 on the component 10. The metal nanostructures include nanowires having a main extension direction transverse to the main extension direction of the first connection element 9 and / or the second connection element 11.

[0057] The component 10 includes a semiconductor body 3 or an optical element 4. Here, the component 10 is a lens. The component 10 is actively adjusted using a gripper. At the same time, during the operation of the optoelectronic module 1, the optical output parameters of the optoelectronic module 1 are detected. Then, using the optical output parameters, the component 10 is aligned and positioned by the gripper.

[0058] In other words, the alignment and positioning of component 10 are performed while the semiconductor body pre - arranged on carrier 2 emits electromagnetic radiation. Thereby, for example, the gripper is used to align component 10 so that the intensity of the electromagnetic radiation emitted by optoelectronic module 1 is maximized.

[0059] In the active adjustment of component 10, the first connecting element 9 and the second connecting element 11 are pressed or compressed against each other. Thereby, as shown in FIG. 2B, a connection part 5 including the first connecting element 9 and the second connecting element 11 is formed. In connection part 5, the metal nanostructures of the first connecting element 9 and the second connecting element 11 are interlocked with each other or at least partially contact each other.

[0060] FIGS. 3A - 3C show another example of a method for manufacturing optoelectronic module 1. Similar to FIG. 2A, a carrier 2 having a first connecting element 9 with a metal nanostructure is provided (FIG. 3A). Further, a component 10 having a second connecting element 11 and including a metal nanostructure is provided. The first connecting element 9 has dimensions larger than those of the second connecting element 11. Here, the metal nanostructures of the first connecting element 9 and the second connecting element 11 include nanowires having Au. Au has a melting point of about 1064 °C. Here, component 10 includes a lens.

[0061] As shown in FIG. 3B, component 10 is actively adjusted so that the first connecting element 9 and the second connecting element 11 are pressed against each other. In the active adjustment, component 10 is aligned and / or positioned around six axes. Thereby, a connection part 5 including the first connecting element 9 and the second connecting element 11 is formed. In the connection part, the nanowires of the first connecting element 9 and the second connecting element 11 have a maximum distance of 10 micrometers. Then, a compression agent 12 is introduced into connection part 5. The liquid compression agent 12 is introduced into connection part 5 using, for example, dispenser 13. Here, compression agent 12 contains Ga or In.

[0062] The compression agent 12 is melted before being introduced into the connection part 5 so that it can be introduced into the connection part 5 in a liquid state. In particular, Ga has a melting point of about 30°C, and In has a melting point of about 157°C.

[0063] When introducing the compression agent 12 into the connection part 5, the compression agent 12 is drawn into the cavity between the metal nanostructures of the first connection element 9 and the second connection element 11. This process is carried out particularly by capillary force. The compression agent 12 dissolves a part of the materials of the metal nanostructures of the first connection element 9 and the second connection element 9, thereby forming an alloy between the metal nanostructures. At the same time, a part of the metal nanostructures remains in the connection part 5. In other words, the connection part 5 includes the metal nanostructures of the first connection element 9 and the second connection element 11 and the alloy after the introduction of the compression agent 12. The alloy contains AuGa or AuIn.

[0064] The alloy of the materials of the first connection element 9 and the second connection element 11 has a melting point higher than that of the compression agent 12, particularly a melting point exceeding 260°C. As a result, the alloy between the metal nanostructures in the connection part 5 solidifies isothermally, and a material bond is formed between the component 10 and the carrier 2 (Figure 3C). The connection part 5 has stability at a temperature of about 260°C. This is because none of the materials in the connection part 5 melt below this temperature. Thereby, the connection can be soldered as an SMD.

[0065] Figure 4A is a schematic cross-sectional view showing the steps of a method for manufacturing the optoelectronic module 1 according to an embodiment. Here, the first connection element 9 is coated on the carrier 2, and the second connection element 11 is coated on the component 10. The second connection element 11 has dimensions smaller than those of the first connection element 9. Furthermore, the second connection element 11 has dimensions smaller than those of the component 10. In other words, the second connection part 11 covers only a part of the surface of the component 10 where the component 10 is connected to the carrier 2. In active adjustment, the component 10 is aligned by rotating around one of the main axes. The rotation is carried out particularly along the rotation direction 14.

[0066] In active adjustment, it is also possible to tilt the component 10 in two different directions and / or rotate it about the optical propagation direction. Rotation about the optical propagation direction is performed, for example, when the component 10 is a semiconductor body and has particularly non-rotationally symmetric radiation characteristics.

[0067] Figure 4B is a plan view showing the steps of the manufacturing method of the optoelectronic module 1 shown in Figure 4A. The first connection element 9 on the carrier 2 has dimensions larger than those of the component 10. In active adjustment, the component 10 is positioned along the displacement direction 15. The displacement direction 15 is parallel to the main extension plane of the carrier 2 and / or the component 10. Also, in active adjustment, vertical positioning, i.e., positioning perpendicular to the main extension plane of the carrier 2, is performed.

[0068] The features and exemplary embodiments described in connection with the drawings can be combined with each other according to further exemplary embodiments, even if not all combinations are explicitly described. Furthermore, the exemplary embodiments described in connection with the drawings may alternatively or additionally have further features described in the general part.

[0069] The present invention is not limited by the description of the exemplary embodiments. Rather, the present invention includes combinations of the features described in the claims, any novel features of the features described in the claims even if not explicitly described, and any combinations of the features described in the claims.

Explanation of Reference Numerals

[0070] 1 Optoelectronic module 2 Carrier 3, 3’, 3’’ Semiconductor body 31 Exit surface 4, 4’, 4’’ Optical element 5, 5’ Connection part 6 Housing 7, 7’, 7’’ Submount 8 Interposer 9 First connection element 10 Component 11 Second connection element 12 Compressor 13 Dispenser 14 Rotation direction 15 Displacement direction

Claims

1. A carrier (2), a semiconductor body (3) provided on the carrier and emitting radiation, and an optical element (4) provided in the beam path of the semiconductor body (3), comprising: at least one component (3, 4) selected from the group consisting of the semiconductor body (3) and the optical element (4) is connected to the carrier (2) via a connection part (5) comprising a metal nanostructure, a photoelectronic module (1).

2. The photoelectronic module (1) comprises a housing (6) that at least seals the semiconductor body (3), The photoelectronic module (1) according to claim 1.

3. The semiconductor body (3) comprises a laser diode or is a laser diode, The photoelectronic module (1) according to claim 1 or 2.

4. The photoelectronic module (1) comprises at least one additional semiconductor body (3', 3''), The photoelectronic module (1) according to any one of claims 1 to 3.

5. The photoelectronic module (1) contains no organic components at least within the housing (6), The photoelectronic module (1) according to any one of claims 1 to 4.

6. The optical element (4) is selected from the group consisting of a lens, a prism, a collimating lens, a beam combiner, a polarizing filter, a birefringent crystal, and a photonic integrated circuit, The photoelectronic module (1) according to any one of claims 1 to 5.

7. The metal nanostructure comprises nanowires, The nanowires have a maximum distance of 10 micrometers, The photoelectronic module (1) according to any one of claims 1 to 6.

8. The nanowires are at least partially in contact with each other, The photoelectronic module (1) according to claim 7.

9. The metal nanostructure contains at least one metal from the group consisting of Au, Ag, and Cu, The photoelectronic module (1) according to any one of claims 1 to 8.

10. An alloy containing the metal of the nanostructure is arranged between the metal nanostructures, The photoelectronic module (1) according to any one of claims 1 to 9.

11. The further components of the alloy are selected from the group consisting of Ga, In, Hg, and Sn, The photoelectronic module (1) according to claim 10.

12. A step of providing a carrier (2) having a first connection element (9) comprising a metal nanostructure, Providing a component (10) having a second connection element (11) comprising a metal nanostructure; Actively adjusting the component (10) on the carrier (2); Connecting the carrier (2) and the component (10), including: A connection part (5) comprising the first connection element (9) and the second connection element (11) is formed; A method for manufacturing a optoelectronic module (1).

13. The component (10) is selected from the group consisting of a semiconductor body (3), an optical element (4), a submount (7), and an interposer (8); The method for manufacturing an optoelectronic module (1) according to claim 12.

14. The connection part (5) has stability at a temperature of at least 250 °C; The method for manufacturing an optoelectronic module (1) according to claim 12 or 13.

15. During the connection between the carrier (2) and the component (10), a compression agent (12) is introduced into the connection part (5); The compression agent (12) forms an alloy with the materials of the first connection element (9) and the second connection element (11); The method for manufacturing an optoelectronic module (1) according to any one of claims 12 to 14.

16. The compression agent (12) is melted before being introduced into the connection part (5); The method for manufacturing an optoelectronic module (1) according to claim 15.

17. The compression agent (12) is selected from the group consisting of Ga, In, Hg, Sn, and alloys thereof; The method for manufacturing an optoelectronic module (1) according to claim 15 or 16.

18. The first connection element (9) has a larger dimension than the second connection element (11); The method for manufacturing an optoelectronic module (1) according to any one of claims 12 to 17.

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