Transparent heater for improving the productivity of an epitaxial reactor

Abstract

A method and apparatus for heating a transparent component within a semiconductor processing chamber are described. The transparent component is heated using a transparent heater coupled to the transparent component. The transparent heater includes a support base, an electrode layer, and a capping layer. The electrode layer is a heating element. The transparent heater has an optical transparency of greater than about 80% at the wavelengths emitted by one or more radiation sources within the processing chamber. The transparent heater is a flexible transparent heater or is formed of a plurality of sub-heaters.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to apparatuses and methods for manufacturing semiconductor devices. More particularly, the apparatuses disclosed herein relate to heating a transparent surface on an outer surface of a reactor body of an epitaxial deposition processing chamber using one or more resistive heating elements. A method of using the same is also disclosed.

Background Art

[0002] Semiconductor substrates are processed for a wide range of applications including the manufacture of integrated devices and microdevices. One method of substrate processing involves depositing a material such as a dielectric material or a conductive metal on an upper surface of the substrate within a processing chamber. For example, epitaxy is a deposition process that typically grows a thin, ultra-high purity layer of silicon or germanium on a substrate surface. This material can be deposited in a cross-flow chamber by flowing a processing gas parallel to the surface of the substrate placed on a support and pyrolyzing the processing gas to deposit the material from the processing gas onto the substrate surface.

[0003] During epitaxial deposition, the processing space is divided into an upper region and a lower region. In the upper region, the processing gas is flowed over the upper surfaces of the substrate and the susceptor. The lower region is purged to reduce the amount of processing gas flowing into the lower region. However, the upper and lower regions are not isolated from each other. When the processing gas is inadvertently flowed into the lower region, a film may be formed on a lower permeable member within the processing space. The temperature of the lower permeable member determines the amount of particle / film deposition on the lower permeable member as well as the etching rate of the film during processing chamber cleaning. Since the temperature of the lower permeable member is not uniform, the film coating on the lower permeable member becomes non-uniform over time, reducing the predictability of the deposition on the substrate.

[0004] Therefore, it is necessary to improve the temperature control of the permeable member within the processing chamber.

Summary of the Invention

[0005] In one embodiment, a heater assembly configured for use during semiconductor manufacturing includes a chamber component, a transparent heater coupled to the chamber component and having a support base, and an electrode disposed on the support base.

[0006] In another embodiment, a heater assembly configured for use during semiconductor manufacturing includes a transmissive window, a transparent heater coupled to the transmissive window and having a support base, and an electrode disposed on the support base.

[0007] In another embodiment, a processing chamber configured for use during semiconductor processing includes a chamber body, an upper transmissive window disposed within the chamber body, a lower transmissive window disposed within the chamber body, a substrate support disposed between the upper transmissive window and the lower transmissive window, and a transparent heater coupled to one of the upper transmissive window or the lower transmissive window.

[0008] To enable a more detailed understanding of the above-described features of the present disclosure, a more specific description of the present disclosure, briefly summarized above, can be obtained by reference to the embodiments shown in some of the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and are therefore not to be considered as limiting the scope, and other equally effective embodiments can also be recognized.

Brief Description of the Drawings

[0009]

Figure 1A

Figure 1B

Figure 2

Figure 3

Figure 4A

Figure 4B

Figure 4C

Figure 4D

Figure 5

DETAILED DESCRIPTION OF THE INVENTION

[0010] For ease of understanding, the same reference numbers are used to designate the same elements common to each figure, where possible. It is contemplated that elements and features of one embodiment may be advantageously incorporated into other embodiments without further recitation.

[0011] The present disclosure is directed to heating a transparent surface on an outer surface of a reactor body of an epitaxial deposition processing chamber using one or more resistive heating elements. More specifically, the upper and lower transmissive members of the epitaxial deposition processing chamber may have one or more transparent heaters disposed thereon to reduce the effect of cold spots on the formation and removal of films on the transmissive members. The transparent heater is configured to allow radiation from a lamp or other radiant device within the processing chamber to pass through, and is also flexible to allow the transparent heater to be placed on a curved or irregular surface such as near the neck of the transmissive member.

[0012] In deposition processes such as epitaxial deposition, high processing temperatures are commonly utilized. Thus, the heater discussed in this specification is configured to withstand high processing temperatures, adhere to irregular and curved surfaces, maintain optical transparency in a desired wavelength range, and rapidly and accurately heat a transmissive member in a position - specific manner. By using the heater described herein for chamber components such as optically transparent members, the temperature gradient across the optically transparent member is reduced, and thus, film deposition and etching on the optically transparent member can be further controlled.

[0013] When the temperature of some portions of the transmissive member within the processing chamber is low, it has been found that the condensation of deposition precursors such as epitaxial deposition precursors increases on a portion of the transmissive member, while the etching efficiency decreases in the same portion of the transmissive member. Thus, position - specific heating of the transmissive member improves the etching efficiency of removing the deposited film while simultaneously reducing unwanted film deposition.

[0014] Figures 1A - 1B are schematic views of a deposition chamber 100 in which various transparent heaters are disposed. Figure 1A is a schematic view of a first embodiment of the deposition chamber 100. Figure 1B is a schematic view of a second embodiment of the deposition chamber 100. The deposition chamber 100 is utilized to grow an epitaxial film on a substrate such as substrate 102. The deposition chamber 100 creates a cross - flow of precursors across the upper surface 150 of the substrate 102.

[0015] The deposition chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form a chamber body. A substrate support 106, an upper transmission window 108, a lower transmission window 110, a plurality of upper lamps 141, and a plurality of lower lamps 143 are disposed within the chamber body. As shown, a controller 120 communicates with the deposition chamber 100 and is used to control processes such as those described herein. The substrate support 106 is disposed between the upper transmission window 108 and the lower transmission window 110. The plurality of upper lamps 141 are disposed between the upper transmission window 108 and the lid 154. The lid 154 includes a plurality of sensors 153 disposed therein for measuring the temperature within the deposition chamber 100. The plurality of lower lamps 143 are disposed between the lower transmission window 110 and the floor 152. The plurality of lower lamps 143 form a lower lamp assembly 145.

[0016] The processing space 136 is formed between the upper transmission window 108 and the lower transmission window 110. The upper transmission window 108 may have a dome shape and may be referred to as the upper dome. The upper transmission window 108 has an upper dome portion 109 and a support ring 111, where the upper dome portion 109 may be referred to as a central window portion in embodiments where the upper dome portion 109 is not dome-shaped. The support ring 111 is coupled to the outer end face of the upper dome portion 109 and is disposed between the upper body 156 and the flow module 112. The lower transmission window 110 may also be dome-shaped such that the lower transmission window 110 has a lower dome portion 113, and in embodiments where the lower dome portion 113 is not dome-shaped, it may be referred to as a central window portion. At the center of the lower dome portion 113, there is a central opening 123 through which the shaft 118 of the substrate support 106 passes. A hollow transmission shaft member 115 extends along the length of the shaft 118 from the central opening 123 within the lower dome portion 113 of the lower transmission window 110. The hollow transmission shaft member 115 is connected to the lower dome portion 113 at the neck 117 of the lower transmission window 110. The lower dome portion 113 of the lower transmission window 100 is connected to a support ring 119 at the outer end face of the lower dome portion 113. The support ring 119 is disposed between the lower body 148 and the flow module 112.

[0017] The processing space 136 has a substrate support 106 disposed therein. The substrate support 106 includes an upper surface on which the substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. The shaft is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices for moving and / or adjusting the shaft 118 and / or the substrate support 106 within the processing space 136. The motion assembly 121 includes a rotational actuator 122 for rotating the shaft 118 and / or the substrate support 106 about the longitudinal axis A of the deposition chamber 100. The motion assembly 121 further includes a vertical actuator 124 for raising and lowering the substrate support 106 in the z-direction. The motion assembly includes an inclination adjustment device 126 used to adjust the planar orientation of the substrate support 106 and a lateral adjustment device 128 used to laterally adjust the positions of the shaft 118 and the substrate support 106 within the processing space 136.

[0018] The substrate support 106 may include lift pin holes 107 disposed therein. The lift pin holes 107 are dimensioned to receive lift pins 132 for lifting the substrate 102 from the substrate support 106 either before or after the deposition process is performed. The lift pins 132 may rest on lift pin stops 134 when the substrate support 106 is lowered from the processing position to the transfer position.

[0019] The flow module 112 includes a plurality of process gas inlets 114, a plurality of purge gas inlets 164, and one or more exhaust gas outlets 116. The plurality of process gas inlets 114 and the plurality of purge gas inlets 164 are disposed on the flow module 112 on a side opposite to the one or more exhaust gas outlets 116. One or more flow guides 146 are disposed below the plurality of process gas inlets 114 and the one or more exhaust gas outlets 116. The flow guide 146 is disposed above the purge gas inlet 164. The liner 163 is disposed on the inner surface of the flow module 112 to protect the flow module 112 from the reactive gas used during the deposition process. The process gas inlet 114 and the purge gas inlet 164 are arranged to flow gas parallel to the upper surface 150 of the substrate 102 disposed in the process space 136. The process gas inlet 114 is in fluid communication with a process gas source 151. The purge gas inlet 164 is in fluid communication with a purge gas source 162. The one or more exhaust gas outlets 116 are in fluid communication with an exhaust pump 157. Each of the process gas source 151 and the purge gas source 162 can be configured to supply one or more precursors or process gases to the process space 136.

[0020] One or more heaters are coupled to one or both of the outer surfaces of the upper transmission window 108 or the lower transmission window 110. The one or more heaters are optically transparent to radiation of wavelengths emitted by the plurality of upper lamps 141 and the plurality of lower lamps 143. Heaters of various configurations can be utilized. FIG. 1A shows a first embodiment of how one or more transparent heaters 175 can be utilized within the deposition chamber 100. The one or more transparent heaters 175 are attached to the lower transmission window 110 of the outer surface 172. The outer surface 172 is on the side opposite to the surface exposed to the process space 136. The one or more transparent heaters 175 are flexible and are coupled to the outer surface 172 between the lower dome portion 113 and the neck 117 of the lower transmission window 110. The one or more transparent heaters 175 are placed to cover a portion of the lower transmission window 110 that normally has cold spots.

[0021] In some embodiments, a single transparent heater 175 is wrapped around the neck 117 of the lower transmission window 110 such that the transparent heater 175 forms a ring or a partial ring. The ring formed by the transparent heater 175 may be split on one side to enable the transparent heater 175 to be mounted around the hollow transmission member shaft 115. Alternatively, the transparent heater 175 is mounted covering the hollow transmissive shaft member 115 without a split portion and is slid to a predetermined position around the neck 117 of the lower transmission window 110.

[0022] In other embodiments, one or more transparent heaters 175 are a plurality of transparent heaters 175 arranged side by side to form a ring, such as two or more transparent heaters 175 forming a ring, or three or more transparent heaters 175 forming a ring.

[0023] FIG. 1B shows a second embodiment of how the transparent heaters 175, 176, 177, 178 can be utilized within the deposition chamber 100. In addition to one or more transparent heaters 175 attached to the lower transmission window 110, the deposition chamber 100 of FIG. 1B further includes one or more transmission member shaft heaters 178, one or more neck heaters 177, and one or more upper transmission member heaters 176 disposed on the outer surface 174 of the upper transmission window 108. Each of the transparent heater 175, the neck heater 177, the transmission member shaft heater 178, and the upper transmission member heater 176 has a similar configuration but can be controlled separately to control the temperature of separate zones of the upper transmission window 108 and the lower transmission window 110. Each of the transparent heater 175, the neck heater 177, the transmission member shaft heater 178, and the upper transmission member heater 176 can also be further divided into small zones of separate heaters that can be controlled separately to finely adjust the upper transmission window 108 and the lower transmission window 110.

[0024] One or more transmissive member shaft heaters 178 are disposed on the outer surface 172 of the hollow transmissive member shaft 115 such that the one or more transmissive member shaft heaters 178 extend downwardly from the neck 117 towards the motion assembly 121. One or more neck heaters 177 are disposed on the outer surface 172 of the neck 117 of the lower transmissive window 110. The upper transmissive member heater 176 is disposed on the outer surface 174 of the upper dome portion 109. In some embodiments, the upper transmissive member heater 176 covers a majority of the outer surface 174 of the upper dome portion 109, such as more than 75% of the outer surface 174 of the upper dome portion 109, such as more than 90% of the outer surface 174 of the upper dome portion 109.

[0025] One or more transparent heaters 175 can also be configured to cover a greater portion of the lower transmissive window 110 of the embodiment of FIG. 1B than of the embodiment of FIG. 1A. In the deposition chamber 100 of FIG. 1B, the one or more transparent heaters 175 cover substantially the entire outer surface 172 of the lower dome portion 113 of the lower transmissive window 110, such as more than 90% of the surface area of the outer surface 172 of the lower dome portion 113.

[0026] FIG. 2 is a schematic enlarged view of a portion of the deposition chamber 100 of FIG. 1A. As shown in the enlarged portion of FIG. 2, the one or more transparent heaters 175 are directly coupled to the outer surface 172 of the lower transmissive window 110 at the contact surface 204 of the transparent heater 175. The contact surface 204 is coplanar with the outer surface 172 of the lower transmissive window 110 and an adhesive may be disposed thereon.

[0027] The adhesive is configured to bond the transparent heater 175 to the lower transmission window 110. The adhesive can be thermally activated. The adhesive itself is also optically transparent so as not to prevent radiation from entering and leaving the transparent heater 175. Alternatively, depending on the processing temperature requirements, the optical adhesive may be omitted. In such an example, the support base 304 (see FIG. 3) and / or the encapsulation layer 308 of the transparent heater 175 may be formed of mica. In such an example, the transparent heater 175 can be held in place using a small glass tab directly bonded to the lower transmission window 110 (or the upper transmission window if necessary) by ozone plasma treatment. The tab can support the transmission window 110 or can facilitate bonding between the transmission window 110 and the transparent heater 175. The support base 304 and the encapsulation layer 308 can contact each other at their end faces (thus sealing the electrode 306), and the support base 304 and the encapsulation layer can be bonded to each other directly or through bonding to the electrode 306. In yet another example, in the case of the support base 304 and / or the encapsulation layer 308, ozone plasma treatment may be used to directly bond one or both of the support base 304 and / or the encapsulation layer 308 to the transparent window.

[0028] In some embodiments, the contact surface 204 between the outer surface 172 of the lower transmission window 110 and the transparent heater 175 is joined using vacuum ultraviolet (VUV) irradiation treatment, and one of the transparent heater 175 or the transmission window 110 is exposed to oxygen radicals and ozone to react with one of the contact surface 204 or the outer surface 172. When the lower transmission window 110 and the transparent heater 175 are joined, the number of boundaries through which radiation passes is reduced compared to using an adhesive, and potential energy losses due to an extra adhesive layer are also reduced.

[0029] The lead wire 206 is connected to at least one portion of the transparent heater 175. The lead wire 206 is a wire or cable that connects the transparent heater 175 to the controller 120. The lead wire 206 can extend along the outside of the lower transmission window 110.

[0030] Each of the transparent heaters 176, 177, and 178 is further coupled to its respective upper transmission window 108 or lower transmission window 110 using an adhesion technique or a bonding technique similar to that used to bond the transparent heater 175 to the lower transmission window 175. Each of the transparent heaters 176, 177, and 178 can be further coupled to the controller 120 via one or more lead wires 206.

[0031] FIG. 3 is a schematic cross-sectional view of the transparent heater 175. Each of the transparent heaters 176, 177, and 178 has a configuration similar to that of the transparent heater 175. The transparent heater 175 includes a support base 304, electrodes 306, and an encapsulation layer 308. The electrodes 306 may also be referred to as heating elements and can function as resistive heating elements.

[0032] The support base 304 is a transparent support base and is disposed on the electrode 306 on the side opposite to the lower transmission window 110. The support base 304 is an optically transparent material and does not deteriorate even at high processing temperatures such as temperatures exceeding about 400°C, such as temperatures exceeding about 500°C, such as temperatures exceeding about 600°C, such as temperatures exceeding about 700°C. The support base 304 is the thickest layer of the transparent heater 175 among the support base 304, the electrodes 306, and the encapsulation layer 308.

[0033] The support base 304 has an optical transparency exceeding about 85%, such as an optical transparency exceeding about 90%, such as an optical transparency exceeding about 95%, such as an optical transparency exceeding about 97%, such as an optical transparency exceeding about 99%, such as an optical transparency exceeding about 80% at a desired radiation wavelength. The desired radiation wavelength is the wavelength emitted by one or more radiation sources within the deposition chamber 100. In some embodiments, the desired radiation wavelength is an infrared (IR) wavelength. In some embodiments, the desired radiation wavelength is less than about 5000 nm, such as about 300 nm to about 5000 nm, such as about 500 nm to about 3000 nm, such as about 500 nm to about 2500 nm, such as about 500 nm to about 2000 nm, such as about 500 nm to about 1500 nm, such as about 500 nm to about 1000 nm.

[0034] The support base 304 is formed of a flexible material so that the support base 304 can be curved along the curvature of one of the upper transmission window 108 or the lower transmission window 110. The flexibility of the support base 304 is such that the transparent heater 177 can be installed at the neck of the lower transmission window 110. The support base 304 can have a Young's modulus of less than about 150 GPa, such as from about 0.1 GPa to about 150 GPa, from about 0.1 GPa to about 100 GPa, from about 0.5 GPa to about 75 GPa, from about 1 GPa to about 50 GPa, etc.

[0035] The support base 304 can be formed from one of the materials, or a combination thereof. In some embodiments, the support base 304 is a mica material such as muscovite material or fluorophlogopite mica (synthetic fluoromica). The mica material is flexible and can be heated to a high processing temperature without breaking the support base 304. In some embodiments, commercially available materials such as Corning® Gorilla® Glass or Willow® Glass may be used to form the support base 304.

[0036] In some embodiments, a non-flexible material is utilized for the support base 304, and a plurality of transparent heaters 175 are assembled to form a transparent heater assembly. Each of the transparent heaters 175 within the transparent heater assembly can be mechanically and electrically coupled. In some embodiments, infrared (IR)-grade fused silica is utilized. Arranging the plurality of transparent heaters 175 side by side like tiles allows for a wider range of materials to be utilized for the support base 304 and enables improvement in the compatibility of the lower transmission window 110 to the outer surface 172.

[0037] The electrode 306 is formed between the support base 304 and the encapsulation layer 308. The electrode 306 has a sheet resistance of 1 ohm / square to 10,000 ohm / square, such as 1 ohm / square to 1000 ohm / square, or 100 ohm / square to 8000 ohm / square. Due to the resistivity of the electrode 306, heat can be generated by the transparent heater 175. The electrode 306 is about 1000 W / m 2 ~ about 2500 W / m 2 such as, or about 2500 W / m 2 ~ about 5000 W / m 2 such as, about 100 W / m 2 ~ about 5000 W / m 2 and can be configured to generate an output of.

[0038] The electrode 306 is formed of an optically transparent material such that the electrode has an optical transparency of more than about 80%, such as more than about 85%, more than about 90%, more than about 95%, more than about 97%, more than about 99% at a desired emission wavelength. The desired emission wavelength is the wavelength emitted by one or more radiation sources in the deposition chamber 100. In some embodiments, the desired emission wavelength is an infrared (IR) wavelength. In some embodiments, the desired emission wavelength is less than about 5000 nm, such as about 300 nm to about 5000 nm, about 500 nm to about 3000 nm, about 500 nm to about 2500 nm, about 500 nm to about 2000 nm, about 500 nm to about 1500 nm, about 500 nm to about 1000 nm.

[0039] The electrode 306 is flexible and can be stretched in the same manner as the support base 304. The electrode 306 has a Young's modulus of less than about 150 GPa, such as about 0.1 GPa to about 150 GPa, about 0.1 GPa to about 100 GPa, about 0.5 GPa to about 75 GPa, about 1 GPa to about 50 GPa.

[0040] In some embodiments, electrode 306 is formed of a transparent conductive oxide, such as a metal oxide or a transition metal oxide. Exemplary conductive oxides include indium tin oxide, indium gallium zinc oxide, or perovskite CaVO3. In some embodiments, electrode 306 is formed from a nanowire network, such as a metal nanowire network. The nanowire network may be one of, or a combination of, a silver nanowire network, an aluminum nanowire network, a gold nanowire network, or a copper nanowire network. The nanowire network is an overlay network of wires having a diameter of less than about 250 nm, such as less than about 25 nm, such as less than about 50 nm. In one example, the diameter of the wire is from about 25 nm to about 250 nm.

[0041] The nanowire network is beneficial for use as electrode 306 in a transparent heater, such as transparent heater 175, due to the optical transparency of the nanowire network as well as the flexibility of the nanowire network. The nanowire network has been found to be flexible and can be easily printed on a base substrate, such as base substrate 304. The nanowire network can also be very durable when exposed to high temperatures, such as those utilized during epitaxial deposition processes.

[0042] Electrode 306 is coupled to one or more leads 206 such that electrode 306 has a positive terminal 302a and a negative terminal 302b. Positive terminal 302a and negative terminal 302b are utilized to pass current through electrode 306 to heat electrode 306. Positive terminal 302a may be held at a higher voltage than negative terminal 302b. Positive terminal 302a and negative terminal 302b are metal wires. One or more contacts may also be disposed on either side of electrode 306.

[0043] The encapsulation layer 308 is disposed to cover the electrode 306 and configured to separate the electrode 306 from the lower transmission window 110. The encapsulation layer 308 may be an adhesive or may be used as an adhesive for bonding the transparent heater 175 to the lower transmission window 110. In some embodiments, the encapsulation layer 308 is a resin. The encapsulation layer 308 may be the same or similar material as the support base 304. Thus, the support base 304 is a mica material such as muscovite material or fluorophlogopite mica. The mica material is flexible and can be heated to a high processing temperature without breaking the encapsulation layer 308. In some embodiments, a commercially available material such as Corning® Gorilla® Glass or Willow® Glass may be used to form the encapsulation layer 308. In another example, both the encapsulation layer 308 and the support base 304 are formed of glass, and the encapsulation layer 308 and the support base 304 are joined to each other by ozone plasma treatment. In some embodiments, it is considered that the encapsulation layer 308 may be omitted if the electrode 306 is process-compatible with the environment.

[0044] The encapsulation layer 308 is formed of an optically transparent material such that the encapsulation layer 308 has an optical transparency of greater than about 80%, such as greater than about 85%, such as greater than about 90%, such as greater than about 95%, such as greater than about 97%, such as greater than about 99% at a desired emission wavelength. The desired emission wavelength is the wavelength emitted by one or more radiation sources within the deposition chamber 100. In some embodiments, the desired emission wavelength is an infrared (IR) wavelength. In some embodiments, the desired emission wavelength is less than about 5000 nm, such as about 300 nm to about 5000 nm, such as about 500 nm to about 3000 nm, such as about 500 nm to about 2500 nm, such as about 500 nm to about 2000 nm, such as about 500 nm to about 1500 nm, such as about 500 nm to about 1000 nm.

[0045] The encapsulation layer 308 is flexible and can be stretched in the same way as the support base 304. The electrode 306 has a Young's modulus of less than about 150 GPa, such as about 0.1 GPa to about 150 GPa, about 0.1 GPa to about 100 GPa, about 0.5 GPa to about 75 GPa, about 1 GPa to about 50 GPa, etc.

[0046] The encapsulation layer 308 electrically insulates the electrode 306 and the lower transmission window 110. The encapsulation layer 308 is thermally conductive to allow the heat generated by the electrode 306 to be quickly dissipated throughout the encapsulation layer 308 and the lower transmission window 110. A high electrical resistivity reduces the possibility of arcing or current leakage from the electrode 306. The electrical resistivity of the encapsulation layer is about 10 12 Ωm or more, such as about 10 14 Ωm or more, such as about 10 15 Ωm or more, such as about 10 10 Ωm or more. The thermal conductivity is about 0.5 W / mK or more, such as about 3 W / mK or more, about 50 W / mK or more, about 100 W / mK or more, etc. A high thermal conductivity enables faster temperature adjustment of a portion of the lower transmission window 110.

[0047] The electrode 306 includes a first surface 310 and a second surface 316 opposite the first surface 310. The encapsulation layer 308 is disposed on the first surface 310 such that the electrode contact surface 312 of the encapsulation layer 308 contacts the first surface 310. The electrode 306 is disposed on the support base 304 such that the second surface 316 of the electrode 306 contacts the support surface 314 of the support base 304.

[0048] In the embodiments described herein, the assembled transparent heater 175 has an optical transparency greater than about 80%, such as greater than about 85%, greater than about 90%, greater than about 95%, greater than about 97%, greater than about 99% at a desired radiation wavelength. In some embodiments, the desired radiation wavelength is less than about 5000 nm, such as about 300 nm to about 5000 nm, about 500 nm to about 3000 nm, about 500 nm to about 2500 nm, about 500 nm to about 2000 nm, about 500 nm to about 1500 nm, about 500 nm to about 1000 nm.

[0049] Figures 4A - 4D are schematic plan views of various heater configurations of transparent heaters 175, 176, 177, 178. As shown in Figure 4A, a single rectangular transparent heater 175 is disposed on the outer surface 172 of the lower transmission window 110. Both the positive terminal 302a and the negative terminal 302b extend from the transparent heater 175 in the same direction. The embodiment of Figure 4A may be utilized when the support base 304 and other components of the transparent heater 175 are flexible, or when the transparent heater 175 is disposed on a flat portion of a device such as one of the upper transmission window 108 or the lower transmission window 110. The configuration of the transparent heater 175 shown in Figure 4A may be similar to that of the transparent heater 176 utilized for the upper transmission window 108.

[0050] In the embodiment of FIG. 4B, the transparent heater 175 is formed by a collection 402 of a plurality of sub - heaters 404. The plurality of sub - heaters 404 may be rectangular in shape and may form a part of the transparent heater 175. The plurality of sub - heaters 404 are similar in configuration to the single transparent heater 175 described with respect to FIG. 3. However, each of the transparent heaters 175 can be driven slightly differently from each other such that the plurality of sub - heaters 404 allows for a wider range of adaptability in the application of the transparent heater 175. Further, the use of the plurality of sub - heaters 404 enables additional materials to be utilized within the support base 304, the electrodes 306, and the encapsulation layer 308, as these materials may be either highly rigid or low in flexibility. However, since one or more of the sub - heaters 404 may be oriented in a different direction with respect to the other sub - heaters 404, the transparent heater 175 can be arranged to cover a curved surface such as the curvature of the upper transmission window 108 or the lower transmission window 110. Each of the sub - heaters 404 is electrically connected such that power lines are arranged through each of the sub - heaters 404 and connect each of the sub - heaters 404 to the positive terminal 302a and the negative terminal 302b. The sub - heaters 404 can be connected either in parallel or in series. In some embodiments, the sub - heaters 404 are further grouped such that some of the sub - heaters 404 form a first heating zone and other sub - heaters 404 form a second heating zone corresponding to a portion of one of the upper transmission window 108 or the lower transmission window 110 that is different from the first heating zone.

[0051] In the embodiment of FIG. 4C, the transparent heater 175 is one annular heater 410 or a plurality of annular heaters. The annular heater 410 is disposed in the lower transmission window 110. The annular heater 410 is disposed around the axial opening 406 of the lower transmission window 110. The axis 118 of the substrate support 106 is disposed inside the axial opening 406. The annular heater 410 may have an open end such that it has a joint 411 that can be joined and disconnected when two ends of the annular heater 410 are equipped or maintained in the lower transmission window 110. In some embodiments, the annular heater 410 is slid over the hollow transmission member axis 115 such that the joint 411 is not utilized. In embodiments where the annular heater 410 is separated at the joint 411, the annular heater 410 is flexible to allow the annular heater 410 to open at the joint 411 and be installed around the hollow transmission member axis 115.

[0052] The positive terminal 302a is disposed at the first end of the annular heater 410, and the negative terminal 302b is disposed at the second end of the annular heater 410. The transparent heater 175 has electrodes such as an electrode 306 disposed therethrough to connect the positive terminal 302a and the negative terminal 302b.

[0053] In some embodiments, the annular heater 410 is divided into a plurality of annular heaters including an inner annular heater and an outer annular heater. The inner annular heater is disposed radially inside the outer annular heater such that the inner annular heater is disposed inside the inner surface of the outer annular heater. Both the inner annular heater and the outer annular heater are disposed radially outside the axis 118 of the substrate support 106.

[0054] In the embodiment of FIG. 4D, the transparent heater 175 is similar to the embodiment of FIG. 4C, but the annular heater 410 is divided into a plurality of sub-heaters 412. The plurality of sub-heaters 412 are arranged to form a ring. The plurality of sub-heaters 412 are similar to the sub-heater 404 of FIG. 4B. Each of the sub-heaters 412 is connected and can be adjusted to have a different orientation with respect to any one of the other sub-heaters 412. In some embodiments, the plurality of sub-heaters 412 allow a less flexible or non-flexible material to be used within the transparent heater 175 while still conforming the transparent heater 175 to the shape of an object such as the lower transmissive window 110 to which it is attached.

[0055] FIG. 5 is a schematic plan view of a substrate transfer robot 500 with a transparent heater 175 disposed thereon. The transparent heater 175 is disposed on one or more blades 506 of the substrate transfer robot 500. The one or more blades 506 are part of a robot head 504. The robot head 504 is coupled to a robot arm 502. The robot arm 502 is configured to drive the robot head 504 and a substrate supported on the blade 506 of the robot head 504. One or more lead wires 206 are disposed through or on the robot arm 502 and coupled to the transparent heater 175. One or more transparent heaters 175, such as a plurality of transparent heaters 175 disposed on each of the blades 506, are disposed on each blade 506 of the substrate transfer robot 500.

[0056] When the transparent heater 175 is used in the substrate transfer robot 500, the thermal shock when the substrate is placed on one of the blades 506 of the robot head 504 can be reduced. In some cases, when a hot substrate contacts a cold blade, such as one of the blades 506, the substrate may break or be damaged. Heating the substrate transfer robot 500 with the transparent heater 175 enables shortening of the substrate cooling time within the processing chamber and faster relative movement of the substrate and the blade while starting and stopping contact with the substrate.

[0057] The transparent heater 175 can be used in a wide range of semiconductor applications and various semiconductor devices. The transparent heater 175 can be useful when applied to chamber windows such as the upper transmission window 108, the lower transmission window 110, and a viewport (not shown). Variations of the transparent heater 175 can also be applied to a substrate transfer arm or a cassette. It is also contemplated that the transparent heater 175 may be used together with other optically transparent components within a semiconductor device chamber.

[0058] Using a transparent heater, such as one of the transparent heaters 175, 176, 177, 178, enables more precise and accurate adjustment of the component temperature within a semiconductor processing chamber, such as a deposition chamber like an epitaxial deposition chamber. The flexibility of the transparent heaters described herein provides the function of shaping the transparent heater to a non-flat surface. Alternatively, a plurality of non-flexible transparent heaters are utilized and individually applied to non-flat surfaces.

[0059] The transparent heater can correct local variations in the temperature of the transparent surface within the semiconductor processing chamber. It has been shown that local variations in temperature enable a film to be formed on the surface of the component facing the substrate processing space. This film is formed by cold spots where further deposition occurs and the etching rate is low.

[0060] The transparent heaters described herein enable more controlled heating but do not interfere with the field of view of a pyrometer placed within the processing chamber or the radiation from a lamp.

[0061] While the above is directed to embodiments of the present disclosure, other further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, the scope of which is determined by the appended claims.

Claims

1. A heater assembly configured for use during semiconductor manufacturing, a chamber component, and a transparent heater coupled to the chamber component, a support base, and an electrode disposed on the support base comprising the transparent heater and comprising a heater assembly.

2. The heater assembly according to claim 1, wherein a capping layer is disposed on a surface of the electrode opposite the support base.

3. The heater assembly according to claim 2, wherein the capping layer is bonded to the chamber component.

4. The heater assembly according to claim 1, wherein the transparent heater has an optical transparency of greater than about 80% at wavelengths of less than about 5000 nm.

5. The heater assembly according to claim 1, wherein the chamber component is optically transparent and comprises one of a lower transmission window, an upper transmission window, or a robot arm.

6. The chamber component is the lower transmission window, a hollow transmission member shaft, a dome portion, and a neck connecting the hollow transmission member shaft and the dome portion further comprising the heater assembly according to claim 5.

7. The chamber component is the upper transmission window, a dome portion, and a support ring disposed around the dome portion further comprising the heater assembly according to claim 5.

8. The heater assembly according to claim 1, wherein the chamber component is a robot arm and the transparent heater is disposed on one or more blades of the robot arm.

9. A heater assembly configured for use during semiconductor manufacturing, a transmission window, and a transparent heater coupled to the transmission window, a support base, and an electrode disposed on the support base comprising the transparent heater and comprising a heater assembly.

10. The heater assembly according to claim 9, wherein the electrode is a heating element.

11. The electrode has a resistivity in the range of about 100 W / m ２ to about 5000 W / m ２ The heater assembly according to claim 10.

12. The heater assembly according to claim 9, wherein the support base is a mica material.

13. The heater assembly according to claim 12, wherein the mica material is one of muscovite or fluorophlogopite mica (synthetic fluorine mica), or a combination thereof.

14. The heater assembly according to claim 9, wherein the electrode is a metal nanowire network.

15. The heater assembly according to claim 14, wherein a capping layer is disposed to cover the electrode.

16. The heater assembly according to claim 15, wherein the capping layer is joined to the transmissive window.

17. The heater assembly according to claim 15, wherein the capping layer is coupled to the transmissive window using an adhesive.

18. A processing chamber configured to be used during semiconductor processing, comprising a chamber body, an upper transmissive window disposed within the chamber body, a lower transmissive window disposed within the chamber body, a substrate support disposed between the upper transmissive window and the lower transmissive window, and a transparent heater coupled to one of the upper transmissive window or the lower transmissive window. The processing chamber comprising the above components.

19. The transparent heater further comprises a support base, an electrode disposed on the support base, and a capping layer disposed to cover the electrode. The processing chamber according to claim 18, further comprising the above components.

20. The processing chamber according to claim 19, wherein a controller is coupled to the transparent heater and the electrode is a heating element.

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