Batch processing apparatus, systems, and related methods and structures for epitaxial deposition processes

Abstract

The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition processes. In one embodiment, an apparatus for processing substrates includes a cassette. The cassette is at least partially supported by a pedestal assembly. The cassette includes multiple levels arranged perpendicular to one another, each level including a support surface configured to support a substrate. A level spacing between adjacent levels of the multiple levels is 25 mm or greater, and the level spacing is defined between the support surfaces of the adjacent levels.

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE

[0001] This disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition processes. [Background technology]

[0002]

[0002] Semiconductor substrates are processed for a variety of applications, including the fabrication of integrated devices and microdevices. However, processes (such as epitaxial deposition processes) can be lengthy and expensive, and can have capacity and throughput limitations. Processes can also be limited with respect to film growth rate. Furthermore, hardware can include relatively large dimensions, occupying a larger footprint within a fabrication facility. Furthermore, challenges can include temperature control, gas control, and / or control and adjustment from the center to the edge of the substrate. Such challenges can be exacerbated in relatively complex processing steps.

[0003]

[0003] Therefore, there is a need for improved thermal processing chambers in semiconductor processing. Summary of the Invention

[0004]

[0004] The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition processes.

[0005] In one embodiment, an apparatus for substrate processing includes a chamber body including a processing space and a plurality of gas injection passages formed within the chamber body and fluidly connected to the processing space. The chamber body includes one or more gas exhaust passages formed within the chamber body opposite the plurality of gas injection passages, the one or more gas exhaust passages fluidly connected to the processing space. The apparatus includes one or more heat sources configured to generate heat, a pedestal assembly positioned within the processing space, and a cassette positioned within the processing space and at least partially supported by the pedestal assembly. The cassette includes a plurality of levels arranged perpendicular to one another, each level including a support surface configured to support a substrate. A level spacing between adjacent levels of the plurality of levels is 25 mm or greater, and the level spacing is defined between the support surfaces of the adjacent levels.

[0006] In one embodiment, an apparatus for substrate processing includes a chamber body including a processing space, a plurality of gas injection passages formed in the chamber body, and one or more gas exhaust passages formed in the chamber body opposite the plurality of gas injection passages. The apparatus also includes one or more heat sources configured to generate heat, a pedestal assembly positioned in the processing space, and a flow guide structure positioned in the processing space. The flow guide structure includes one or more first flow dividers that divide the processing space into multiple flow levels. The flow guide structure includes one or more second flow dividers that intersect the one or more first flow dividers and are oriented to divide each of the multiple flow levels into multiple flow sections.

[0007] In one embodiment, a method for processing multiple substrates includes positioning a first substrate within a processing space of a chamber, the first substrate having a diameter. The method includes positioning a second substrate within the processing space. Positioning the second substrate includes positioning the second substrate at a substrate spacing from the first substrate, the substrate spacing being a ratio of the diameter of the first substrate, the ratio being 1:12 or greater. The method includes flowing one or more process gases into the processing space, heating the first substrate and the second substrate, and simultaneously depositing one or more layers on each of the first substrate and the second substrate.

[0008]

[0008] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above can be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only exemplary embodiments and therefore should not be considered as limiting its scope, as the present disclosure may admit of other equally effective embodiments. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a schematic top view of a system for processing a substrate, according to one embodiment. [Figure 2]

[0010] 1 is a schematic cross-sectional side view of a processing apparatus according to one embodiment. [Figure 3]

[0011] 3 is a schematic top view of a chamber body that can be used as the chamber body shown in FIG. 2, according to one embodiment. [Figure 4]

[0012] 4 is a schematic cross-sectional side view of a portion of the chamber body shown in FIG. 3, according to one embodiment. [Figure 5A]

[0013] 3 is a schematic top view of a chamber body that can be used as the chamber body shown in FIG. 2, according to one embodiment. [Figure 5B]

[0014] 3 is a schematic top view of a chamber body that can be used as the chamber body shown in FIG. 2, according to one embodiment. [Figure 5C]

[0015] 3 is a schematic top view of a chamber body that can be used as the chamber body shown in FIG. 2, according to one embodiment. [Figure 5D]

[0016] 3 is a schematic top view of a chamber body that can be used as the chamber body shown in FIG. 2, according to one embodiment. [Figure 5E]

[0017] 3 is a schematic top view of the chamber body shown in FIG. 2 according to one embodiment. [Figure 6]

[0018] 1 is a schematic cross-sectional side view of a processing apparatus according to one embodiment. [Figure 7]

[0019] 1 is a schematic cross-sectional side view of a processing apparatus according to one embodiment. [Figure 8]

[0020] 1 illustrates method steps for batch processing multiple substrates according to one embodiment. [Figure 9]

[0021] 3 is a schematic top view of a single upper window assembly disposed above the chamber body on both the first chamber side and the second chamber side of FIG. 2, according to one embodiment. [Figure 10]

[0022] 1 is a schematic cross-sectional side view of a processing apparatus according to one embodiment. [Figure 11]

[0023] 11 is an enlarged schematic cross-sectional side view of the processing apparatus shown in FIG. 10, according to one embodiment. [Figure 12]

[0024] 12 is a schematic top view of the processing apparatus shown in FIGS. 10 and 11, according to one embodiment. FIG. [Figure 13]

[0025] FIG. 12 is a schematic perspective view of the cassette shown in FIGS. 10 and 11 according to one embodiment. [Figure 14]

[0026] 1 is a schematic partial cross-sectional side view of a cassette and flow guide structure according to one embodiment. [Figure 15]

[0027] 11 is an enlarged schematic cross-sectional side view of the processing apparatus shown in FIG. 10, according to one embodiment. [Figure 16]

[0028] 1 is a schematic diagram of a method for processing multiple substrates according to one embodiment. [Figure 17]

[0029] FIG. 2 is a schematic diagram of a graph plotting average growth rate versus substrate spacing, according to one embodiment. [Figure 18]

[0030] 1 is a schematic diagram of a graph plotting gas velocity versus position on a substrate, according to one embodiment. [Figure 19]

[0031] FIG. 15 is a schematic partial cross-sectional side view of a cassette 1930 and the flow guide structure shown in FIG. 14, according to one embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010]

[0032] For ease of understanding, wherever possible, like reference numerals have been used to designate like elements common to the figures, and it is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0011]

[0033] The present disclosure relates to batch processing apparatuses, systems, and related methods and structures for epitaxial deposition processes. In one or more embodiments, the processing apparatus includes a dual body including two processing spaces formed therein. The two processing spaces can share a gas panel and / or an exhaust pumping system, such as a pumping system having a pressure control valve and a vacuum pump. The dual body sharing a gas panel and / or an exhaust pump facilitates reducing equipment costs and the system's footprint while facilitating simultaneous execution of processing steps in the two processing spaces. Each of the two processing spaces can include a respective cassette for supporting multiple substrates during processing, thereby facilitating simultaneous execution of processing steps on both multiple substrates (in each processing space) to improve throughput. The processing apparatus includes one or more side heating elements (e.g., side heat lamps, side resistance heaters, side LEDs, and / or side lasers, etc.) positioned outside the first processing space, outside the second processing space, and / or between the first and second processing spaces. In one or more embodiments, the cassette supports multiple substrates, and the substrate spacing between at least two of the substrates is a ratio of one or more diameters of the substrates. The ratio is 1:12 or greater, and / or the substrate spacing is 15 mm or greater. The substrate spacing facilitates simultaneous processing of multiple substrates (e.g., batch processing), increasing throughput while reducing the chamber footprint, increasing growth rates, and improving device performance. The substrate spacing also facilitates adjustment of process parameters.

[0012]

[0034] The present disclosure contemplates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, fastening such as welding, fusion, melt bonding, interference fitting, and / or the use of bolts, threaded connections, pins, and / or screws. The present disclosure contemplates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, integral formation. The present disclosure contemplates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, direct coupling and / or indirect coupling (such as indirect coupling through a component such as a link).

[0013]

[0035] FIG. 1 is a schematic top view of a system 100 for processing substrates, according to one embodiment. The system 100 includes a cluster tool 180. The cluster tool 180 includes a factory interface 102, one or more transfer chambers 108 (one shown) having a transfer robot 110 disposed therein. The cluster tool 180 includes one or more processing chambers 124, 125, 126, 127 (four shown) and one or more cleaning chambers 128 (one shown), such as a pre-cleaning chamber, mounted on a main frame 151 of a single cluster tool 180. In the embodiment shown in FIG. 1, two processing chambers are located on opposite sides of the transfer chamber 108, including one cleaning chamber 128. The present disclosure contemplates that a greater or lesser number of processing chambers and / or pre-cleaning chambers may be used. In one or more embodiments, the transfer robot 110 is configured to simultaneously load and unload substrates to and from each of two processing spaces of one of the processing chambers 124, 125, 126, 127. In one or more embodiments, the transfer robot 110 is configured to simultaneously load and unload two or more substrates to and from each of two cassettes positioned in the two processing spaces of one of the processing chambers 124, 125, 126, 127. In the embodiment shown in FIG. 1 , the transfer robot 110 is configured to simultaneously load and unload at least four substrates 109.

[0014]

[0036] 1 , the factory interface 102 includes a docking station 140 and a factory interface robot 142 to facilitate the transfer of cassettes and / or substrates. The docking station 140 is configured to receive one or more front-opening unified pods (FOUPs) 149. In one embodiment, which can be combined with other embodiments, each factory interface robot 142 includes a support structure 148 (e.g., a blade) configured to transfer cassettes and / or substrates from the factory interface 102 to the load lock chambers 104, 106. The load lock chambers 104, 106 have respective doors 150, 152 that interface with the factory interface 102 and respective doors 154, 156 that interface with the transfer chamber 108. One or more processing chambers 124, 125, 126, 127, 128 have respective doors that interface with the transfer chamber 108. The door may include a slit opening with a slit valve to allow the cassettes and / or substrates to pass through, for example, by the transfer robot 110, and to provide a seal between the respective chambers to prevent gas from passing between the respective chambers. The door may be opened to allow the cassettes and / or substrates to pass through, and may be closed at other times.

[0015]

[0037] System 100 includes a controller 190 configured to control system 100 or its components. For example, controller 190 may control the operation of system 100 using direct control of chambers 124, 125, 126, 127, 128 of system 100 or by controlling controllers associated with chambers 124, 125, 126, 127, 128. During operation, controller 190 enables data collection and feedback from each chamber to adjust and control the performance of system 100.

[0016]

[0038] Controller 190 generally includes a central processing unit (CPU) 192, memory 194, and support circuits 196. CPU 192 may be any type of general-purpose processor that can be used in an industrial environment. Memory 194, or non-transitory computer-readable medium, is accessible by CPU 192 and may be one or more memories, such as random access memory (RAM), read-only memory (ROM), a floppy disk, a hard disk, or other form of local or remote digital storage. Support circuits 196 are coupled to CPU 192 and may include cache, clock circuits, an input / output subsystem, power supplies, etc.

[0017]

[0039] The various methods (e.g., method 800) and processes disclosed herein may generally be performed under the control of CPU 192 by CPU 192 executing computer instruction code stored in memory 194 (or the memory of a particular process chamber), for example, as a software routine. When the computer instruction code is executed by CPU 192, CPU 192 controls the chamber to perform steps according to the various methods and processes described herein. In one embodiment, which can be combined with other embodiments, memory 194 (a non-transitory computer-readable medium) includes instructions stored therein that, when executed, cause the method (e.g., method 800) and steps (e.g., steps 801, 802, 803, 804, 806, 808, 810) described herein to be performed. Controller 190 may be in communication with shared gas panel 208 and shared pumping system (which may include shared pump 210 and shared exhaust valve 273), for example, to perform multiple steps.

[0018]

[0040] Other processing systems in other configurations are also contemplated. For example, more or fewer processing chambers may be coupled to the transfer apparatus. In the embodiment shown in FIG. 1, the transfer apparatus includes a transfer chamber 108. In other embodiments, more or fewer transfer chambers (e.g., one transfer chamber) may be implemented as the transfer apparatus in a system for processing a substrate.

[0019]

[0041] FIG. 2 is a schematic cross-sectional side view of a processing apparatus 200 according to one embodiment. The processing apparatus 200 can be used, for example, as at least a portion of the processing chambers 124, 125, 126, and 127 shown in FIG. 1. The cross-sectional view shown in FIG. 2 is taken along section 2-2 shown in FIG. 5E. Side heat sources 418a-418d shown in FIG. 5E are not shown in FIG. 2 for the sake of visual clarity. The processing apparatus 200 includes a processing chamber having a first chamber side 201a and a second chamber side 201b. Each chamber side 201a, 201b defines a respective processing space 224, 226. The first chamber side 201a and the second chamber side 201b are substantially identical to one another (e.g., mirror images of one another). The chamber sides 201a, 201b share a chamber body 230 and a chamber body bottom 234. The chamber sides 201a, 201b may further include a shared lid (not shown). The chamber sides 201a, 201b are mirror images of each other with respect to a reference plane 203. The reference plane 203 is a central plane that divides the processing chambers.

[0020]

[0042] The first chamber side 201a defines a first processing space 224 for processing a plurality of first substrates 255 supported by a first cassette 257. The first chamber side 201a includes a first upper window 216a, such as a dome, disposed between the first lid 204a and the first processing space 224. The first chamber side 201a includes a first lower window 218a disposed below the first processing space 224. One or more first upper radiant heat sources 206a are positioned above the first processing space 224 and the first upper window 216a. The one or more first upper radiant heat sources 206a may be radiant heat sources such as lamps (e.g., halogen lamps). The present disclosure contemplates that other heat sources (in addition to or instead of lamps) may be used for the various heat sources described herein. For example, resistive heaters, light-emitting diodes (LEDs), and / or lasers may be used for the various heat sources described herein. One or more first upper heat sources 206a are disposed between the first upper window 216a and the first lid 204a. The first upper heat source 206a is positioned to uniformly heat the first substrate 255. One or more first lower heat sources 238a are positioned below the first process space 224 and the first lower window 218a. The first lower heat source 238a is disposed between the first lower window 218a and the chamber body bottom 234. The first lower heat source 238a is positioned to uniformly heat the first substrate 255.

[0021]

[0043] The second chamber side 201b defines a second processing space 226 for processing a plurality of second substrates 259 supported by a second cassette 261. The second chamber side 201b includes a second upper window 216b, such as a dome. The second upper window 216b is disposed between the second lid 204b and the second processing space 226. The second chamber side 201b includes a second lower window 218b, such as a dome, disposed below the second processing space 226. One or more second upper heat sources 206b are positioned above the second processing space 226 and the second upper window 216b. The second upper heat source 206b is disposed between the second upper window 216b and the second lid 204b. The second upper heat source 206b is positioned to apply a predetermined heating to the second substrates 259. One or more second lower heat sources 238b are positioned below the second process space 226 and the second lower window 218b. The second lower heat sources 238b are disposed between the second lower window 218b and the chamber body bottom 234. The second lower heat sources 238b are positioned to provide a predetermined heating to the second substrate 259.

[0022]

[0044] Each of the first and second cassettes 257, 261 includes multiple levels corresponding to multiple substrates 255, 259, respectively. Each level of each cassette 257, 261 includes one or more arc-shaped supports 263. Each arc-shaped support 263 has a first inner ledge 265 that supports either a respective first substrate 255 or second substrate 259. Each level of each cassette 257, 261 includes an upper opening 267 above the one or more arc-shaped supports 263 and a lower opening 269 below the one or more arc-shaped supports 263. Each arc-shaped support 263 can include a unitary structure, such as a ring, or two structures spaced apart from each other. Each cassette 257, 261 can simultaneously support two or more substrates 255, 259 for processing (e.g., 12 or more substrates 255, 259 each). 2, each cassette 257, 261 supports 12 substrates 255, 259. Each cassette 257, 261 can support two substrates 255, 259, three substrates 255, 259, or six substrates 255, 259.

[0023]

[0045] The first and second upper windows 216a, 216b and the first and second lower windows 218a, 218b may be transparent to infrared radiation, such as by transmitting at least 95% of the infrared radiation. The first and second upper windows 216a, 216b and the first and second lower windows 218a, 218b may be a quartz material. In one or more embodiments, each of the first and second upper windows 216a, 216b includes an inner window 293 and an outer window support 294. The inner window 293 may be a thin quartz window that partially defines the processing volumes 224, 226. The outer window support 294 supports the inner window 293 and is at least partially disposed within the support groove 304 (see FIGS. 3 and 4 ). In one or more embodiments, the first and second upper windows 216a, 216b may be a single window, with a single upper window assembly 900 (see FIG. 9 ) disposed over both the first chamber side 201a and the second chamber side 201b. The single upper window assembly 900 may help eliminate pressure gradients across the first and second chamber sides 201a, 201b and reduce temperature gradients across the single upper window 916. As an example, a single upper radiant heat assembly (e.g., multiple lamps coupled to a single lamp header) spanning both processing spaces 224, 226 may be used. The single upper window 916 may reduce or eliminate the need for a center wall, such as the center wall 232, which may facilitate reducing or eliminating pressure gradients. The center wall 232 may be modified to partially separate the first processing space 224 from the second processing space 226. As an example, the central wall 232 can be modified to include a gap (e.g., similar to the gap shown between the first inner window 912a and the second inner window 912b in FIG. 9) that fluidly connects the two processing spaces 224, 226. One or more passages (such as equalization ports 240) can be formed through the central wall 232 to fluidly connect the two processing spaces 224, 226, thereby facilitating the reduction or elimination of pressure gradients. The single upper window 916 is described in more detail in FIG. 9 and the accompanying text.

[0024]

[0046] The processing apparatus 200 includes first and second pedestal assemblies 250 and 252, which are disposed within the first and second processing spaces 224 and 226, respectively. A liner 220 is disposed within each of the first and second chamber sides 201 a and 201 b and surrounds each of the pedestal assemblies 250 and 252. The pedestal assembly 250 is disposed at least partially within the first chamber side 201 a, and the pedestal assembly 252 is disposed at least partially within the second chamber side 201 b. The liner 220 protects the chamber body 230 from processing chemicals within the first and second processing spaces 224 and 226. Each of the first and second chamber sides 201 a and 201 b includes a liner 220. The chamber body 230 is disposed between an upper window 216 and a lower window 218. Liners 220 are disposed within the first and second chamber sides 201 a and 201 b. Each liner 220 is disposed between one of the processing volumes 224, 226 and the chamber body 230. An exhaust plenum 270 partially surrounds the processing volumes 224, 226, and one or more exhaust ports 272 a, 272 b are formed through the liner 220 connecting the exhaust plenum 270 to the processing volumes 224, 226.

[0025]

[0047] The first and second chamber sides 201 a, 201 b share a gas panel 208 and a pump 210, such as a vacuum pump. The gas panel 208 may be two separate gas panels or a shared gas panel. When a shared gas panel 208 is utilized, both the first and second chamber sides 201 a, 201 b are supplied with gas by the same gas panel 208. The gas panel 208 supplies process gases to the first and second processing spaces 224, 226 through a conduit 223 and first and second gas injection passages 282 a, 282 b. The gas panel 208 distributes the gas evenly between the first processing space 224 and the second processing space 226. The gas panel 208 is connected to the conduit 223. The conduit 223 splits into two additional conduits 227 a, 227 b. The conduit 223 may include a split controller. A split controller (not shown) is disposed between conduit 223 and conduits 227a, 227b. The split controller controls the flow of gas into each conduit 227a, 227b. In one or more embodiments, the split controller includes a valve or mass flow controller. Two additional conduits 227a, 227b distribute gas from conduit 223 to first and second gas injection passages 282a, 282b, respectively. Conduits 227a, 227b have restrictors 221a, 221b disposed therein. Restrictors 221a, 221b control the flow of process gas through conduits 227a, 227b. Restrictors 221a, 221b may also measure the flow of process gas through conduits 227a, 227b. The restrictors 221a, 221b control the flow of process gas flowing from the gas panel 208 and balance the process gas flow so that the process gas flow is the same in both conduits 227a, 227b. The restrictors 221a, 221b may be, for example, valves, mass flow controllers, or other restrictive devices. The restrictors 221a, 221b may be used in addition to or instead of a precision divider controller (not shown) coupled to the conduit 223. Gases that may be supplied by the gas panel 208 include process gases such as purge gases, cleaning gases, and / or deposition gases.The deposition gas may include, for example, one or more reactive gases carried in one or more carrier gases.

[0026]

[0048] The first and second chamber sides 201 a, 201 b further include a first individual gas panel 215 and a second individual gas panel 217. The first individual gas panel 215 supplies process gas to the first processing space 224 through a first gas injection passage 282 a. The second individual gas panel 217 supplies process gas to the second processing space 226 through a second gas injection passage 282 b. The first and second individual gas panels 215, 217 are utilized when the restrictors 221 a, 221 b cannot adequately balance the process gas flow from the shared gas panel 208 or when auxiliary gases are used for a particular process. Gases that may be supplied by the first and second individual gas panels 215, 217 include deposition gases. In one or more embodiments, both the shared gas panel 208 and the first and second individual gas panels 215, 217 are utilized. In one or more embodiments, a shared gas panel 208 is utilized and the first and second individual gas panels 215, 217 are omitted. In one or more embodiments, both the first and second individual gas panels 215, 217 are utilized. In embodiments in which at least some process gases are supplied by the shared gas panel 208, the cost of the gas injection system may be reduced.

[0027]

[0049] The first chamber side 201a is in fluid communication with the gas panel 208 via a first gas injection passage 282a. The first gas injection passage 282a is in fluid communication with the first processing volume 224 such that the first gas injection passage 282a supplies process gas from the gas panel 208 to the first processing volume 224.

[0028]

[0050] During operation, process gas supplied from the gas panel 208 is introduced into the first processing space 224 through first gas injection passages 282a formed in the sidewall of the chamber body 230, making the gas panel 208 a process gas panel. The first gas injection passages 282a are configured to direct the process gas generally radially inward toward the first pedestal assembly 250. Thus, in one or more embodiments, the first gas injection passages 282a can be cross-flow gas injectors positioned to direct the process gas across the front surface of each first substrate 255, the back surface of each first substrate 255, and / or one or more support surfaces of the first pedestal 254a positioned in the first processing space 224. During the film formation process, one or more support surfaces of the first pedestal 254a are positioned in a processing position adjacent to and approximately level with the first gas injection passages 282a. This may facilitate flow of process gases across the front and back surfaces of the first substrate 255 and / or across one or more support surfaces of the first pedestal 254a generally along the flow path 295. The process gases exit the first processing space 224 through a first exhaust port 272a located on the opposite side of the first processing space 224 from the first gas injection passages 282a. Removal of the process gases through the first exhaust port 272a may be facilitated by a vacuum pump 210.

[0029]

[0051] The gas panel 208 is in fluid communication with the second gas injection passage 282b, which is in fluid communication with the second processing volume 226 such that the second gas injection passage 282b delivers process gas from the gas panel 208 to the second processing volume 226.

[0030]

[0052] Process gas supplied from the gas panel 208 is introduced into the second processing space 226 through second gas injection passages 282b formed in the sidewall of the chamber body 230. The second gas injection passages 282b are configured to direct the process gas in a generally radially inward direction. Thus, in one or more embodiments, the second gas injection passages 282b can be cross-flow gas injectors positioned to direct the process gas across the front surface of each second substrate 259, the back surface of each second substrate 259, and / or one or more support surfaces of a second pedestal 254b positioned in the second processing space 226. During the film formation process, the one or more support surfaces of the second pedestal 254b are positioned in a processing position adjacent to and approximately level with the second gas injection passages 282b. This may facilitate flow of the process gas generally along the flow path 295 across the front and back surfaces of the second substrate 259 and / or across one or more support surfaces of the second pedestal 254b. The process gas exits the second processing space 226 through a second exhaust port 272b located on an opposite side of the second processing space 226 from the second gas injection passage 282b. Removal of the process gas through the second exhaust port 272b may be facilitated by a vacuum pump 210.

[0031]

[0053] Purge gas supplied from a purge gas source 285 is introduced into the bottom region 205 of both the first and second processing volumes 224, 226 through first and second purge gas inlets 284a, 284b formed in the sidewalls of the chamber body 230.

[0032]

[0054] A purge gas source 285 is fluidly connected to conduit 225. Conduit 225 transports purge gas from the purge gas source 285. Conduit 225 branches into two additional conduits 229a, 229b. Conduits 229a, 229b connect conduit 225 to first and second purge gas inlets 284a, 284b. Purge gas source 285 is fluidly connected to first and second purge gas inlets 284a, 284b through conduit 225 and conduits 229a, 229b. First purge gas inlet 284a is fluidly connected to conduit 229a, and second purge gas inlet 284b is fluidly connected to conduit 229b. The purge gas flow rates through the conduits 229a, 229b are balanced using first and second purge gas restrictors 219a, 219b, which balance the flows so that the flow through each conduit 229a, 229b is the same.

[0033]

[0055] The first purge gas inlet 284a is positioned at a level below the first gas injection passage 282a. If a liner 220 is used, a portion of the liner 220 may be positioned between the first gas injection passage 282a and the first purge gas inlet 284a. In either case, the first purge gas inlet 284a is configured to direct the purge gas in a generally radially inward direction. The first purge gas inlet 284a may be configured to direct the purge gas in an upward direction. During the film formation process, the first pedestal assembly 250 is positioned to promote the purge gas to flow generally along the flow path 296 across the backside of the first pedestal 254a. The purge gas exits the bottom region 205 and is exhausted out of the processing chamber through a first exhaust port 272a located on the opposite side of the first processing space 224 from the first purge gas inlet 284a.

[0034]

[0056] The second purge gas inlet 284b is positioned at a level below the second gas injection passage 282b. If a liner 220 is used, a portion of the liner 220 may be positioned between the second gas injection passage 282b and the second purge gas inlet 284b. In either case, the second purge gas inlet 284b is configured to direct the purge gas generally radially inward. The second purge gas inlet 284b may be configured to direct the purge gas in an upward direction. During the film formation process, the second pedestal assembly 252 is positioned to promote the purge gas to flow generally along the flow path 296 across the backside of the second pedestal 254b. The purge gas exits the bottom region 205 and is exhausted out of the processing chamber through a second exhaust port 272b located on the opposite side of the second processing space 226 from the second purge gas inlet 284b.

[0035]

[0057] A pump 210 (e.g., a vacuum pump) is fluidly connected to an exhaust plenum 270 to pump gas from the process spaces 224 and 226 through a plurality of exhaust ports 272 a, 272 b and the exhaust plenum 270. The exhaust plenum 270 is coupled to a shared exhaust conduit 271 shared by the first process space 224 and the second process space 226. The shared exhaust conduit 271 is connected to a second shared exhaust conduit 228 and extends through the chamber body bottom 234 to a shared pumping conduit 274. The shared pumping conduit 274 is coupled to the pump 210 to facilitate pumping of gas from the shared exhaust conduit 271. A shared exhaust valve 273 is disposed in the pumping conduit 274 between the shared exhaust conduit 271 and the pump 210. The shared exhaust valve 273 can be opened or closed depending on the desired pumping process. The shared exhaust valve 273 can be a pressure control valve.

[0036]

[0058] Each pedestal assembly 250, 252 includes a respective first support frame 298 and a respective second support frame 299 disposed at least partially around the first support frame 298. The second support frame 299 includes arms coupled to the respective pedestal 254a, 254b and / or the respective cassette 257, 261 such that raising and lowering of the second support frame 299 raises and lowers the respective pedestal 254a, 254b and / or the respective cassette 257, 261. A plurality of lift pins 289 depend from each pedestal 254a, 254b. Lowering of the respective pedestal 254a, 254b initiates contact between the lift pins 289 and the arms of the respective first support frame 298. As each pedestal 254 a, 254 b continues to lower, the lift pins 289 begin to contact the substrates in their respective cassettes 257, 261, such that the lift pins 289 raise the substrates in their respective cassettes 257, 261. A bottom region 205 of the chamber sides 201 a, 201 b is defined between the chamber body bottom 234 and the first and second pedestals 254 a, 254 b. A stem 256 of each support frame 298, 299 extends through the bottom 234 of the chamber body 230. The stems 256 are coupled to respective motors 264, which are configured to independently raise, lower, and / or rotate each of the first and second pedestals 254 a, 254 b. The present disclosure contemplates that each motor 264 may be driven by a shared power source such that the first and second pedestals 254 a, 254 b move simultaneously and in the same manner. The present disclosure contemplates that the stem 256 may be coupled to the shared motor 264 such that the first and second pedestals 254 a, 254 b move simultaneously and in the same manner.

[0037]

[0059] The pedestal bellows ports 260 are formed in the bottom 234 of the chamber body 230. The pedestal bellows ports 260 extend through the bottom 234 of the chamber body 230. Each pedestal bellows port 260 has a diameter larger than the diameter of the stem 256 and surrounds each stem 256 where the stem 256 extends through the bottom 234 of the chamber body 230. The pedestal bellows ports 260 circumferentially surround the stems 256. Bellows assemblies 258 are disposed around each pedestal bellows port 260 to facilitate reducing or eliminating vacuum leakage outside the chamber body 230. Each bellows assembly 258 circumscribes and surrounds a portion of the stem 256 disposed outside the chamber body 230. The bellows assemblies 258 are coupled between the outer surface of the bottom 234 of the chamber body 230 and a base member 280. The base member 280 may house the motor 264 and a portion of the stem 256 coupled to the motor 264. The bellows assembly 258 may be formed from a metallic or metallized material and configured to form a gas flow channel 262. The gas flow channel 262 is defined as the region between the outer stem 256 and the bellows assembly 258. The gas flow channel 262 extends from the pedestal bellows port 260 to the base member 280. As such, the gas flow channel 262 forms a hollow, cylindrical passage between the bellows assembly 258 and the stem 256. The gas flow channel 262 is in fluid communication between the bottom region 205 and an exhaust conduit 278. The exhaust conduit 278 extends from the gas flow channel 262 through the base member 280 to the pump conduit 274. A valve 279 is disposed along the exhaust conduit 278 between the gas flow channel 262 and the pump conduit 274. When valve 279 is closed, pumping can proceed through exhaust plenum 270. When valve 279 is open, pumping can proceed through pedestal bellows port 260. When valve 279 is open, shared exhaust valve 273 can be closed to enhance pumping of bottom region 205 through pedestal bellows port 260.

[0038]

[0060] In one or more embodiments of the pumping process, the bottom region 205 of each chamber side 201 a, 201 b is pumped through the pedestal bellows port 260. Gases and particles present in the bottom region 205 travel through the pedestal bellows port 260, gas flow channel 262, and exhaust conduit 278 to the vacuum pump 210. In such embodiments, the shared exhaust valve 273 is closed and valve 279 is open so that the pump 210 is in fluid communication with the bottom region 205. Pumping through the pedestal bellows port 260 is performed during a chamber cleaning process, such as when the chamber is idle and not processing substrates. Additionally, an inert gas may be supplied to the chamber sides 201 a, 201 b during the pedestal bellows pumping process. For example, argon is supplied to both chamber sides 201 a, 201 b from either the gas panel 208 or the purge gas source 285 for each chamber side 201 a, 201 b. It is believed that argon supplied via gas panel 208 or purge gas source 285 allows for more efficient cleaning and pumping of bottom region 205 .

[0039]

[0061] In one or more embodiments, a gas source 268 is in fluid communication with each of the bottom regions 205 via the gas flow channels 262 and the pedestal bellows ports 260. The gas source 268 may be configured to supply an inert gas or a cleaning gas to the bottom region 205. While schematically shown as being physically proximate to the processing apparatus 200, the gas source 268 is generally a remote gas source located remotely from the processing apparatus 200. The gas source 268 is coupled to a conduit 276 that extends from the gas source 268 through the base member 280. The conduit 276 is in fluid communication with the gas flow channels 262. A valve 277 is disposed in the conduit 276 between the gas source 268 and the base member 280.

[0040]

[0062] In one or more embodiments, an inert gas, or purge gas, is supplied to the bottom region 205. During operation, the purge gas is supplied to the bottom region 205 from a gas source 268 along a flow path through a conduit 276 with a valve 277 open, through the gas flow channel 262, and through the pedestal bellows port 260. The purge gas is supplied from the gas source 268 during substrate processing in the chamber sides 201 a, 201 b. Suitable purge gases include inert gases such as helium, neon, and argon; however, other non-reactive gases may also be utilized. Flowing the purge gas during substrate processing may prevent particles and contaminants from falling below the support surface 254 and depositing on the surfaces of the chamber sides 201 a, 201 b that define the bottom region 205. During purging through the pedestal bellows port 260, pumping of the chamber sides 201 a, 201 b proceeds through the exhaust plenum 270 and vacuum pump 210. The plurality of exhaust ports 272 and at least a portion of the exhaust plenum 270 are substantially flush with the support surface 254. Pumping through the exhaust plenum 270 draws purge gas from the bottom region 205. In such an embodiment, purge gas and contaminants are exhausted from the chamber sides 201 a, 201 b without the contaminants falling below the support surface 254. However, it is contemplated that pumping and purging through the bellows assembly 258 may be omitted. In such an example, the corresponding hardware for pumping and purging through the bellows assembly 258 may also be omitted.

[0041]

[0063] The processing device 200 also includes an equalization port 240 disposed through a central wall 232 of the processing device 200. The central wall 232 divides the chamber sides 201 a, 201 b and defines at least a portion of the bottom region 205. The equalization port 240 includes a first opening 240 a in fluid communication with the bottom region 205 of the first chamber side 201 a. The equalization port 240 further includes a second opening 240 b in fluid communication with the bottom region 205 of the second chamber side 201 b. The first opening 240 a and the second opening 240 b are each disposed on opposite sides of the equalization port 240 and are fluidly connected to each other. The equalization port 240 can be formed in the central wall 232 or through the region of the chamber body 230 that defines the bottom region 205. Equalization ports 240 are disposed below one or more support surfaces of the first pedestal 254a, below one or more support surfaces of the second pedestal 254b, and below the exhaust plenum 270. An equalization port 240 extends from the bottom region 205 of each chamber side 201a, 201b through the center wall 232, allowing the bottom regions 205 of the chamber sides 201a, 201b to be in fluid communication with one another.

[0042]

[0064] A conduit 244 extends from the equalization port 240 through the center wall 232 and exits the bottom 234 of the chamber body 230 at an outlet port 242. The conduit 244 fluidly couples the equalization port 240 to an exhaust conduit 278. A valve 243 is disposed along the conduit 244 between the outlet port 242 and the exhaust conduit 278. When the valve 243 is open, the bottom region 205 is in fluid communication with the vacuum pump 210. In one or more embodiments, the bottom region 205 is evacuated by an equalization port pumping process. The equalization port pumping process is performed while the chamber sides 201 a, 201 b are idle (e.g., during an idle cleaning process). To allow pumping through the equalization port 240, the exhaust valve 273 is closed and the valve 243 is open. Thus, the vacuum pump 210 is fluidly connected to the bottom region 205 via the conduit 244 and the equalization port 240. As a result of the exhaust valve 273 being closed, evacuation of the chamber sides 201 a, 201 b proceeds through the equalization port 240 rather than through the exhaust plenum 270. During the equalization port pumping process, the vacuum pump 210 evacuates gases and contaminants from the bottom region 205 through the equalization port 240 and the conduit 244. Additionally, during the equalization port 240 pumping process, an inert gas may be supplied to the chamber sides 201 a, 201 b. For example, argon may be supplied to both chamber sides 201 a, 201 b from the gas panel 208. It is believed that the argon supplied via the gas panel 208 promotes more efficient cleaning and pumping of the bottom region 205. Pumping through equalization port 240 removes unwanted contaminants from bottom region 205 without utilizing exhaust plenum 270, improving the functionality of processing device 200.

[0043]

[0065] The equalization port 240 further facilitates equalizing the pressure between each chamber side 201 a, 201 b during substrate processing. Equalizing the pressure within the chamber sides 201 a, 201 b can result in more consistent and uniform deposition results between substrates processed within each chamber side 201 a, 201 b.

[0044]

[0066] In one or more embodiments, a gas source 248 is in fluid communication with the bottom region 205 via a conduit 244 and an equalization port 240. The gas source 248 may be configured to supply an inert gas or a cleaning gas to the bottom region 205. While shown schematically as being physically proximate to the processing apparatus 200, the gas source 248 is generally a remote gas source located remotely from the processing apparatus 200. The gas source 248 is coupled to a conduit 246 extending from the gas source 248 to a conduit 244. A valve 245 is disposed in the conduit 246 between the gas source 248 and the conduit 244. In one or more embodiments, an inert gas, or a purge gas, is supplied to the bottom region 205. During operation, the purge gas is supplied to the bottom region 205 from the gas source 248 along a flow path through the conduit 246, the conduit 244, and the equalization port 240, with the valve 245 open. A purge gas is supplied during the idle cleaning process from a gas source 248. Suitable purge gases include inert gases such as helium, neon, argon, etc. However, other non-reactive gases may also be utilized.

[0045]

[0067] Openings 236 are formed through one or more sidewalls of each of the first and second chamber sides 201 a, 201 b (see FIG. 6 ). The openings 236 can be used to transfer substrates 255, 259 to or from the cassettes 257, 261, for example, to the first and second processing volumes 224, 226. In one or more embodiments, the openings 236 each include a slit valve. In one or more embodiments, the openings 236 can be connected to any suitable valve that allows substrates to pass through.

[0046]

[0068] Each of the first and second chamber sides 201 a, 201 b of the dual chamber may include one or more temperature sensors 291, 292, such as optical pyrometers, that measure the temperature within the first and second chamber sides 201 a, 201 b (e.g., on the surface of the top windows 216 a, 216 b, one or more surfaces of the substrates 255, 259 and / or cassettes 257, 261). The one or more temperature sensors 291, 292 are disposed on the first and second lids 204 a, 204 b.

[0047]

[0069] 2, one or more thermal shields 2010 are disposed around the cassette 257 and the first substrates 255, and around the second cassette 261 and the second substrates 259. Each of the one or more thermal shields 2010 is formed from one or more of silicon carbide (SiC), quartz, and / or silicon carbide (SiC)-coated graphite. The one or more thermal shields 2010 include a plurality of inlet openings 2011 in fluid communication with the gas injection passages 282 a, 282 b and a plurality of outlet openings 2012 in fluid communication with the exhaust ports 272 a, 272 b. Each inlet opening 2011 and each outlet opening 2012 is horizontally aligned with an opening above, below, and / or between the substrates 255, 259 (such as one of the upper opening 267 and the lower opening 269). The inlet opening 2011 is fluidly connected to the first and second gas injection passages 282a, 282b through multiple inlet lines 2021a, 2021b. The outlet 2012 is fluidly connected to the exhaust ports 272a, 272b through multiple outlet lines 2022a, 2022b. Process gas flows from the gas injection passages 282a, 282b, through the inlet lines 2021a, 2021b, through the inlet opening 2011, and onto the substrates 255, 259. After flowing over the front and back surfaces of the substrates 255, 259, the process gas flows through the outlet opening 2012, through the outlet lines 2022a, 2022b, and to the exhaust ports 272a, 272b. Gases, such as purge gas, can flow through one or more channels 2031 beneath the gas inlet 2011 and gas outlet 2012. The one or more channels 2031 are fluidly connected to the gas inlet passages 282a, 282b and / or 284a, 284b through one or more purge inlet lines 2023. The one or more channels 2031 are fluidly connected to the exhaust outlets 272a, 272b through one or more purge outlet lines 2024. In the embodiment shown in Figure 2, one or more thermal shields 2010 are disposed in the first processing space 224 and one or more thermal shields 2010 are disposed in the second processing space 226.

[0048]

[0070] Figure 3 is a schematic top view of a chamber body 390 that can be used as the chamber body 230 shown in Figure 2, according to one embodiment. The chamber body 390 includes two body sections 415a, 415b, two interface surfaces 308, two inlet sections 310, an upper ring assembly 320, a lower ring assembly 318, and first and second exhaust ports 272a, 272b. The chamber body 390 encloses both the first and second process volumes 224, 226 on the first and second chamber sides 101a, 101b.

[0049]

[0071] The first chamber side 201a and the second chamber side 201b (shown in FIG. 2) each form a first half 326 and a second half 328 of the chamber body 390. The first half 326 of the chamber body 390 defines a first body section 415a. The second half 328 of the chamber body 390 defines a second body section 415b. The first and second halves 326, 328 of the chamber body 390 are disposed on opposite sides of a reference plane 203. The reference plane 203 (which extends along the height of the chamber) bisects the chamber body 390, such that the first half 326 of the chamber body 390 is a mirror image of the second half 328 of the chamber body 390.

[0050]

[0072] The upper ring assembly 320 is the upper portion of the chamber body 390. The upper ring assembly 320 at least partially encloses the first process space 224 and the second process space 226. The upper ring assembly 320 may be a single, continuous body or may be multiple components fastened together. In one or more embodiments in which the upper ring assembly 320 is a continuous body, the upper ring assembly 320 is described as a monolithic upper assembly. Utilizing a monolithic assembly for the upper ring assembly 320 facilitates ensuring that each of the first and second chamber sides 201 a, 201 b is positioned in the same vertical position at a given time. Using a monolithic upper ring assembly 320 also facilitates ensuring that the equalization port 240 fluidly connects both the first and second process spaces 224, 226 to each other without having to manage potential misalignment or broken seals between the first and second body sections 415 a, 415 b. The upper ring assembly 320 includes an inlet section 310, a gas passage 312, a first cavity 335, a second cavity 340, a first cavity wall 302, and a second cavity wall 303. The first cavity wall 302 of the first cavity 335 is the outer wall of the first cavity 335. The second cavity wall 303 of the second cavity 340 is the outer wall of the second cavity 340.

[0051]

[0073] Each of the first half 326 and the second half 328 includes an interface surface 308. The interface surface 308 includes openings 236 that are used to transfer substrates 255, 259 into and out of the first and second chamber sides 201 a, 201 b. The interface surface 308 may be connected to another set of processing chambers, a factory interface, or a transfer chamber (such as the transfer chamber 108 shown in FIG. 1). The interface surface 308 is a flange-like surface that is disposed from the first and second chamber sides 201 a, 201 b.

[0052]

[0074] Each of the first half 326 and the second half 328 further includes an inlet section 310. The inlet section 310 is part of the upper ring assembly 320. The inlet section 310 is a section of the upper ring assembly 320 in which the gas passages 312 are formed. The inlet section 310 may be a continuous part of the upper ring assembly 320 or may be separable from the upper ring assembly 320. The inlet section 310 extends outward from a sidewall 325 of the upper ring assembly 320. The sidewall 325 is part of an outer surface 330 of the upper ring assembly 320.

[0053]

[0075] The gas passages 312 are fluidly connected to the gas panel 208 and the purge gas source 285. The gas passages 312 may be a plurality of individual gas passages 312. Each of the plurality of gas passages 312 is used to introduce one or more process gases into the first and second processing spaces 224, 226 through the first and second injection passages 282a, 282b. In one or more embodiments, the gas passages 312 are formed in (e.g., through) the inlet sections 310 of the first and second body sections 415a, 415b. The gas passages 312 may include a plurality of gas passages 312, such as four or more gas passages 312, five or more gas passages 312, six or more gas passages 312, eight or more gas passages 312, ten or more gas passages 312, or twelve or more gas passages 312 for each chamber side 201a, 201b.

[0054]

[0076] Disposed below the upper ring assembly 320 is a lower ring assembly 318. The lower ring assembly 318 is, for example, a lower portion of the chamber body 230 (shown in FIG. 2). The lower ring assembly 318 at least partially encloses the first process space 224 and the second process space 226. The lower ring assembly 318 may be a single, continuous body or may be multiple components fastened together. In embodiments in which the lower ring assembly 318 is a continuous body, the lower ring assembly 318 may be described as a monolithic lower ring assembly. Utilizing a monolithic lower ring assembly for the lower ring assembly 318 facilitates ensuring that each of the first and second chamber sides 101 a, 101 b is positioned at the same vertical position. The use of a monolithic lower ring assembly 318 also facilitates ensuring that the equalization port 240 fluidly connects both the first and second process volumes 224, 226 to one another without having to manage potential misalignment or broken seals between the first and second chamber sides 201 a, 201 b. The lower ring assembly 318 includes first and second exhaust ports 272 a, 272 b, a first cavity 335, a second cavity 340, a first cavity wall 302, and a second cavity wall 303. The first cavity wall 302 of the first cavity 335 is the outer wall of the first cavity 335. The second cavity wall 303 of the second cavity 340 is the outer wall of the second cavity 340. An equalization port 240 is disposed between each of the first and second chamber sides 201 a, 201 b through the lower ring assembly 318. Alternatively, the equalization port 240 is disposed through the upper ring assembly 320.

[0055]

[0077] The first and second exhaust ports 272a, 272b may be positioned on opposite sides of the chamber body 230 from the first and second injection passages 282a, 282b (e.g., approximately 180 degrees from the first and second injection passages 282a, 282b) to facilitate a cross-flow regime. The first and second exhaust ports 272a, 272b may be formed in the lower ring assembly 318. Thus, the first and second exhaust ports 272a, 272b are positioned vertically below the first and second gas injection passages 282a, 282b. The first exhaust port 272a is positioned opposite the first injection passage 282a, and the second exhaust port 272b is positioned opposite the second injection passage 282b. The position of the first exhaust port 272a allows gas flowing from the first injection passage 282a to flow horizontally within the first processing space 224. The location of the second exhaust port 272b allows gases flowing from the second injection passage 282b to flow horizontally within the second processing space 226. The first and second exhaust ports 272a, 272b extend from the first and second cavity walls 302, 303 to the outer surface 345 of the lower ring assembly 318.

[0056]

[0078] The support groove 304 is disposed within each of the first and second body sections 415a, 415b adjacent the first and second cavity walls 302, 303. The support groove 304 is a lip that extends around the diameter of the first and second cavity walls 302, 303. The support groove 304 may be shaped to receive and support the edges of the first and second upper windows 216a, 216b (shown in FIG. 2). The support groove 304 may be vertically offset from and lower than the remainder of the top surface 306 of the upper ring assembly 320.

[0057]

[0079] In one or more embodiments, the chamber body 390 is separated into a first side 322 and a second side 324, such that the first body section 415a is the first side 322 of the chamber body 390 and the second body section 415b is the second side 324 of the chamber body 390. The first side 322 and the second side 324 are on opposite sides of a second reference plane 207. The second reference plane 207 is the longitudinal axis of the chamber body 390. The second reference plane 207 is perpendicular to the reference plane 203 and extends along the height of the chamber. The second reference plane 207 divides the chamber body 390, such that the first side 322 of the chamber body 390 is on one side of the second reference plane 207 and the second side 324 of the chamber body 390 is on the opposite side of the second reference plane 207 from the first side 322. In one or more embodiments, the interface surface 308, the inlet section 310, and the gas passage 312 are all on the first side 322, while the first and second exhaust ports 272a, 272b are on the second side 324. In one or more embodiments, the interface surface 308 is on the first side. The inlet section 310, the gas passage 312, and the first and second exhaust ports 272a, 272b are divided between the first and second sides 322, 324.

[0058]

[0080] The first cavity 335 and the second cavity 340 are separated by a minimum distance 381. The minimum distance 381 is the minimum distance between the first cavity wall 302 and the second cavity wall 303. The minimum distance may be the minimum width of the central wall 232. As the minimum distance 381 varies, the thickness of the central wall 232 may vary. In embodiments in which the first and second upper windows 216a, 216b are separated, the minimum distance 381 is greater than 0 millimeters, e.g., greater than 1 millimeter in thickness. In embodiments in which the first and second upper windows 216a, 216b are replaced by a single upper window 916 (see FIG. 9 ), the minimum distance 381 may be negligible, such that the minimum distance 381 is 0 millimeters in thickness, and the central wall 232 has an opening formed therethrough. In such embodiments, the equalization port 240 may not be formed through the central wall 232. In one or more embodiments, when the minimum distance 381 is reduced to zero millimeters and the minimum width of the central wall 232 is zero millimeters, the first cavity 335 and the second cavity 340 are still separated by either a gas curtain and / or a section of the liner 220 disposed between the first cavity 335 and the second cavity 340.

[0059]

[0081] 4 is a schematic cross-sectional side view of a portion of the chamber body 390 shown in FIG. 3, according to one embodiment. The portion of the chamber body 390 shown in FIG. 4 is the second half 328 of the chamber body 390. The first half 326 is similar to the second half 328. The second purge gas inlet 284b, the second gas injection passage 282b, the support groove 304, and the openings 236 in the second chamber side 201b may represent the first purge gas inlet 284a, the first gas injection passage 282a, the support groove 304, and the openings 236 in the first and first chamber sides 201a. The chamber body 390 includes an upper ring assembly 320 and a lower ring assembly 318.

[0060]

[0082] 4 illustrates the relationship between the first and second gas injection passages 282a, 282b, the first and second purge gas inlets 284a, 284b, and the opening 236. The first and second gas injection passages 282a, 282b and the first and second purge gas inlets 284a, 284b are disposed within the upper ring assembly 320. The first and second gas injection passages 282a, 282b are disposed above the first and second purge gas inlets 284a, 284b. In one or more embodiments, there may be at least four of each of the first and second gas injection passages 282a, 282b, for example, between four and twelve or more of each of the first and second gas injection passages 282a, 282b. In one or more embodiments, there may be at least four first and second purge gas inlets 284a, 284b (e.g., 4 to 12 or more first and second purge gas inlets 284a, 284b). Each of the first and second gas injection passages 282a, 282b and the first and second purge gas inlets 284a, 284b are parallel to one another. The first and second gas injection passages 282a, 282b and the first and second purge gas inlets 284a, 284b are spaced apart along the interior walls of the first and second chamber sides 201a, 201b.

[0061]

[0083] The opening 236 is below the second gas injection passage 282b and the second purge gas inlet 284b. As described above with reference to FIG. 2, the opening 236 is sized and positioned to allow a substrate to pass therethrough. The opening 236 can be closed using a valve. In one or more embodiments, the opening 236 is located directly below the second gas injection passage 282b and the second purge gas inlet 284b. Alternatively, the opening 236 can be located adjacent to but angularly offset from the second gas injection passage 282b and the second purge gas inlet 284b. Embodiments in which the opening 236 is located in a position other than that shown in FIG. 4 are described in FIGS. 5B-5D and the accompanying description. The support groove 304 is above the second gas injection passage 282b and the second purge gas inlet 284b. The first and second exhaust ports 272a, 272b are positioned on opposite sides of the first and second gas injection passages 282a, 282b, as shown in Figure 5A. The first and second exhaust ports 272a, 272b may include multiple outlets, such that there are at least two outlets, for example, three to five (or more) outlets, for each of the first and second exhaust ports 272a, 272b.

[0062]

[0084] Figure 5A is a schematic top view of a chamber body 430a that can be used as the chamber body 230 shown in Figure 2, according to one embodiment. The top view of the chamber body 430a shows the relationship between the opening 236, the first and second gas injection passages 282a, 282b, and the first and second exhaust ports 272a, 272b. The chamber body 430a of Figure 5A also includes an equalization port 240.

[0063]

[0085] The gas injection chord length 404 is the chord length from the gas injection passage at one end of either the first or second gas injection passage 282a, 282b to the gas injection passage at the opposite end of either the first or second gas injection passage 282a, 282b. The gas injection passages used to define the gas injection chord length 404 are the gas injection passages at opposite ends of the first and second gas injection passages 282a, 282b. The gas injection chord length 404 described herein is less than 500 mm, e.g., less than 450 mm, e.g., less than 400 mm. The gas injection chord length 404 is greater than 150 mm, e.g., greater than 200 mm, e.g., about 300 mm. The gas injection chord length 404 is configured to allow flow of process gas across the entire front and back surfaces of the substrate.

[0064]

[0086] The outlet chord length 406 is the chord length from the outer edge of the outlet at one end of either the first or second outlet 272a, 272b to the edge of the outlet at the opposite end of either the first or second outlet 272a, 272b. The outlets used to define the outlet chord length 406 are the outlets at opposite ends of the first and second outlets 272a, 272b. The outlet chord length 406 is less than 500 mm, such as less than 450 mm, for example less than 400 mm. The outlet chord length 406 is greater than 150 mm, for example greater than 200 mm, for example approximately 300 mm.

[0065]

[0087] The gas injection chord length 404 may be similar to the exhaust outlet chord length 406. In some embodiments, the gas injection chord length 404 may be about 10% smaller or larger than the exhaust outlet chord length 406, such as about 5% smaller or larger, or 1% smaller or larger.

[0066]

[0088] In the embodiment of FIG. 5A, the first and second gas injection passages 282a, 282b, the first and second purge gas inlets 284a, 284b, and the first and second exhaust ports 272a, 272b are all positioned parallel to one another. The opening 236 in the chamber body 430a is positioned so that the substrates 255, 259 move in and out of the processing space 224, 226 along a direction parallel to the first and second gas injection passages 282a, 282b, the first and second purge gas inlets 284a, 284b, and the first and second exhaust ports 272a, 272b. The opening 236 in the first body section 415a is positioned directly below the first gas injection passage 282a. The opening 236 in the second body section 415b is positioned directly below the second gas injection passage 282b.

[0067]

[0089] The equalization port 240 is disposed between the first and second body sections 415a, 415b and connects the first and second process volumes 224, 226 to one another.

[0068]

[0090] A process gas flow path 408 for process gas traverses the first processing space 224, traveling from either the first gas injection passage 282a or the first purge gas inlet 284a (shown in FIG. 2) to the first exhaust port 272a. The process gas flow path 408 also traverses the second processing space 226, traveling from either the second gas injection passage 282b or the second purge gas inlet 284b (shown in FIG. 2) to the second exhaust port 272b. Although shown as a curved line in FIG. 5A, the process gas flow path 408 is preferably straight and flows across the substrates within each of the first and second processing spaces 224, 226.

[0069]

[0091] Each of the first and second gas injection passages 282a, 282b and the first and second exhaust ports 272a, 272b is bisected by a first flow path plane 410a. Each of the first flow path planes 410a extends through the first and second body sections 415a, 415b. The first flow path plane 410a is parallel to the flow of process gas from the first and second gas injection passages 282a, 282b to the first and second exhaust ports 272a, 272b. The first flow path plane 410a is perpendicular to the second reference plane 207 (e.g., perpendicular to the longitudinal axis of the chamber body 430), thus forming a 90-degree angle α between the first flow path plane 410a and the second reference plane 207. However, it is contemplated that angle α may deviate from 90 degrees such that first flowpath plane 410a and second reference surface 207 are not perpendicular to each other. In one or more embodiments, angle α is between about 80 degrees and about 100 degrees, for example, between about 85 degrees and about 95 degrees.

[0070]

[0092] 5A facilitates the use of a shared gas panel, such as gas panel 208, and a shared exhaust, such as shared exhaust conduit 271 and / or second shared exhaust conduit 228 (see FIG. 2). The use of a shared gas panel and shared exhaust facilitates reducing system costs while enhancing precision of heating and process gas flow within first and second processing volumes 224, 226. The orientation of first and second gas injection passages 282 a, 282 b, first and second purge gas inlets 284 a, 284 b, and first and second exhaust outlets 272 a, 272 b facilitates space conservation for the use of a shared gas panel and shared exhaust panel.

[0071]

[0093] 2, one or more side heat sources 418a, 418b, 418c, 418d (e.g., side lamps, resistive heaters, LEDs, and / or lasers) are positioned outside one or more of the first processing space 224 and / or the second processing space 226. The one or more side heat sources include one or more first side heat sources 418a located outside the first processing space 224, one or more second side heat sources 418d located outside the second processing space 226, and one or more third side heat sources 418b, 418c located between the first processing space 224 and the second processing space 226. The side heat sources 418a, 418b, 418c, 418d are configured to heat (e.g., by irradiating) the first and second processing spaces 224, 226 through their respective sides. The third side heat sources 418b, 418c are positioned on the center wall 232. The one or more third side heat sources 418b, 418c are opposite the one or more first side heat sources 418a across the first processing space 224. The one or more third side heat sources 418b, 418c are opposite the one or more second side heat sources 418d across the second processing space 226.

[0072]

[0094] Each of the side heat sources 418a-418d is horizontally aligned between the first plurality of gas injection passages 282a and the first purge gas inlet 284a (on a first side of the second reference plane 207) and one or more first exhaust ports 272a (on a second side of the second reference plane 207). Each of the side heat sources 418a-418d is horizontally aligned between the second plurality of gas injection passages 282b and the second purge gas inlet 284b (on a first side of the second reference plane 207) and one or more second exhaust ports 272b (on a second side of the second reference plane 207). The present disclosure contemplates that the side heat sources 418a-418d (or additional side heat sources used in addition to the side heat sources 418a-418d) may be aligned with (e.g., positioned above) one or more of the first and second gas injection passages 282a, 282b, the first and second exhaust ports 272a, 272b, and / or the first and second purge gas inlets 284a, 284b (e.g., as shown in FIG. 5B).

[0073]

[0095] The side heat sources 418a, 418b, 418c, 418d are arranged (e.g., vertically) in multiple heat source levels. For example, three heat source levels are shown for the side heat sources 418a, 418b, 418c, 418d in FIGS. 6 and 7. Each heat source level is arranged to independently heat (e.g., by independently irradiating) one of the multiple levels of each cassette 257, 261. The radiation beam profile of each side heat source 418a, 418b, 418c, 418d within each heat source level can be directed (e.g., diagonally downward) toward the substrates 255 and arc-shaped supports 263 of the respective level of each cassette 257, 261 (see, for example, side heat source 418b shown in FIGS. 14 and 19). As an example, if each cassette 257, 261 includes two levels (or three levels), side heat sources 418a, 418b, 418c, 418d are positioned at two heat source levels (or three heat source levels, if three levels exist) to direct light beams at the substrates 255 and arc-shaped supports 263 on each of the two levels of cassette 257, 261. One or more controllers (such as controller 190) can be used to independently control each heat source level. For example, power to the side heat sources on each level can be independently controlled so that substrates supported by each level of cassette 257, 261 can be independently heated (e.g., to different temperatures during processing).

[0074]

[0096] The side heat sources 418a-418d and heat shields (such as one or more heat shields 2010 described in connection with FIG. 2) uniformly heat the substrates 255, 259 in the batch processing step to promote uniform epitaxial deposition during the batch processing step, thereby promoting increased throughput and improved device performance.

[0075]

[0097] The present disclosure contemplates various locations for the side heat sources 418a-418d, for example, as shown in Figures 5A-5E.

[0076]

[0098] Figure 5B is a schematic top view of a chamber body 430b that can be used as the chamber body 230 shown in Figure 2, according to one embodiment. In the embodiment shown in Figure 5B, the first and second gas injection passages 282a, 282b, the first and second purge gas inlets 284a, 284b, and the first and second exhaust ports 272a, 272b are positioned parallel to the second reference plane 207. A cross-sectional view of the chamber body 430b illustrates the relationship between the opening 236, the first and second gas injection passages 282a, 282b, and the first and second exhaust ports 272a, 272b. The chamber body 430b shown in Figure 5B includes an equalization port 240.

[0077]

[0099] 5B, the first and second gas injection passages 282a, 282b, the first and second purge gas inlets 284a, 284b, and the first and second exhaust outlets 272a, 272b are all positioned parallel and in line with one another (e.g., parallel to the longitudinal axis of the chamber body 430). The openings 236 in both the first and second body sections 415a, 415b are positioned such that the substrates 255, 259 move in and out of the processing spaces 224, 226 along a direction perpendicular to all of the first and second gas injection passages 282a, 282b, the first and second purge gas inlets 284a, 284b, and the first and second exhaust outlets 272a, 272b. The opening 236 on the first chamber side 201a is horizontally aligned between the positions of the first gas injection passage 282a and the first exhaust port 272a, and the opening 236 on the second chamber side 201b is aligned between the positions of the second gas injection passage 282b and the second exhaust port 272b.

[0078]

[0100] The equalization port 240 is disposed between the first and second body sections 415a, 415b. In the embodiment shown in Figure 5B, the equalization port 240 is aligned with the first and second gas injection passages 282a, 282b. The equalization port 240 is below the first and second gas injection passages 282a, 282b and connects the first and second process volumes 224, 226 to each other.

[0079]

[0101] The gas injection chord length 404 and the exhaust outlet chord length 406 in Figure 5B are defined similarly to the gas injection chord length 404 and the exhaust outlet chord length 406 in Figure 5A. The process gas flow passages 408 in Figure 5B are also defined similarly to the process gas flow passages 408 in Figure 5A. In the embodiment shown in Figure 5B, the process gas flow passages 408 diverge from the central wall 232 of the chamber body 430 and move toward the outer edge of the chamber body 430. Process gas flowing from the first gas injection passage 282a flows toward the first exhaust outlet 272a, and process gas flowing from the second gas injection passage 282b flows toward the second exhaust outlet 272b.

[0080]

[0102] As in FIG. 5A, both the first and second gas injection passages 282a, 282b and the first and second exhaust ports 272a, 272b are bisected by a second flow path plane 410b. The second flow path plane 410b extends through the first and second body sections 415a, 415b and along the height of the chamber. In the embodiment shown in FIG. 5B, the second flow path plane 410b is coplanar or forms a single plane through the chamber body 430. The second flow path plane 410b is parallel to the flow of process gas from the first and second gas injection passages 282a, 282b to the first and second exhaust ports 272a, 272b. In the embodiment shown in FIG. 5B, the second flow path plane 410b is parallel to the second reference plane 207. The second flow path plane 410b and the second reference plane 207 form an angle α. In the embodiment of Figure 5B, the angle α is about 0 degrees. In one or more embodiments, the angle α is offset from 0 degrees and is between about -10 degrees and about 10 degrees, such as between about -5 degrees and about 5 degrees.

[0081]

[0103] The embodiment shown in FIG. 5B facilitates the use of a shared gas panel, such as gas panel 208, and a shared exhaust, such as shared exhaust duct 271 and / or second shared exhaust duct 228.

[0082]

[0104] Figure 5C is a schematic top view of a chamber body 430c that can be used as the chamber body 230 shown in Figure 2, according to one embodiment. In the embodiment shown in Figure 5C, the chamber body 230 of Figure 2 is replaced with the chamber body 430c of Figure 4C. In the chamber body 430c, the first and second gas injection passages 282a, 282b, the first and second purge gas inlets 284a, 284b, and the first and second exhaust ports 272a, 272b are positioned at an acute angle α with respect to the second reference plane 207 (e.g., the longitudinal axis of the chamber body 430). A cross-sectional view of the chamber body 430c shows the relationship between the opening 236, the first and second gas injection passages 282a, 282b, and the first and second exhaust ports 272a, 272b. The chamber body 430c shown in FIG. 5C also includes an equalization port 240 and includes multiple side heat sources 418a-418d.

[0083]

[0105] 5C, the first gas injection passage 282a, the first purge gas inlet 284a, and the first exhaust port 272a are all positioned parallel to and in line with one another along a third flowpath plane 410c. The second gas injection passage 282b, the second purge gas inlet 284b, and the second exhaust port 272b are also positioned parallel to and in line with one another along another third flowpath plane 410c. The openings 236 in both the first and second body sections 415a, 415b are angled with the first and second gas injection passages 282a, 282b, the first and second purge gas inlets 284a, 284b, and the first and second exhaust ports 272a, 272b. The opening 236 in the first body section 415a is adjacent to and partially below the first gas injection passage 282a and the first purge gas inlet 284a. The opening 236 in the second body section 415b is adjacent to and partially below the second gas injection passage 282b and the second exhaust port 272b. The opening 236 is partially below the second gas injection passage 282b and the second purge gas inlet 284b.

[0084]

[0106] The equalization port 240 is disposed between the first and second body sections 415a, 415b. In the embodiment shown in Figure 5C, the equalization port 240 connects the first and second process volumes 224, 226 to one another.

[0085]

[0107] The gas injection chord length 404 and the exhaust port chord length 406 in Figure 5C are defined similarly to the gas injection chord length 404 and the exhaust port chord length 406 in Figures 5A and 5B. The process gas flow passage 408 in Figure 5C is also defined similarly to the process gas flow passage 408 in Figures 5A and 5B. In the embodiment shown in Figure 5C, the process gas flow passage 408 moves obliquely relative to the reference plane 203 and the second reference plane 207 of the chamber body 430c and moves toward the outer edge of the chamber body 430c. Process gas flowing from the first gas injection passage 282a flows toward the first exhaust port 272a, and process gas flowing from the second gas injection passage 282b flows toward the second exhaust port 272b.

[0086]

[0108] As in FIGS. 5A and 5B, the first and second gas injection passages 282a, 282b and the first and second exhaust ports 272a, 272b are bisected by a third flow path plane 410c. The third flow path plane 410c extends through the first body section 415a and the second body section 415b. Each of the third flow path planes 410c is parallel to the flow of process gas from one of the first or second gas injection passages 282a, 282b to one of the first or second exhaust ports 272a, 272b. In the embodiment shown in FIG. 5C, each of the third flow path planes 410c forms an acute angle α with the second reference plane 207 when the angle α faces (e.g., is oriented) inward of the reference plane 203. The angle α is the angle on the side of the third flow path plane 410c that is closest to the opening 236. 5C and the accompanying text, the angle α is about 45 degrees. In one or more embodiments, the angle α is between about 10 degrees and about 80 degrees, such as between about 20 degrees and about 70 degrees, such as between about 30 degrees and about 60 degrees, such as between about 35 degrees and about 55 degrees, such as between about 40 degrees and about 50 degrees.

[0087]

[0109] In the embodiment shown in FIG. 5C, a shared gas panel, such as gas panel 208, can be more easily used to supply process gas to the first and second chamber sides 201 a, 201 b. The first and second gas injection passages 282 a, 282 b are closer to each other, and therefore shorter gas conduits can be utilized to transport process gas from the gas panel 208 to the first and second gas injection passages 282 a, 282 b. Providing shorter gas conduits reduces costs and can more evenly distribute pressure (improve gas flow uniformity) between the first and second chamber sides 201 a, 201 b without changing conduit length and backpressure. A shared exhaust (such as shared exhaust conduit 271) can be used to exhaust the process gas. Sharing an exhaust with the gas panel reduces the difficulty of maintaining the heat source head and other chamber components. The present disclosure contemplates that separate exhaust systems can be used for the processing volumes 224, 226.

[0088]

[0110] 5D is a schematic top view of a chamber body 430d that can be used as the chamber body 230 shown in FIG. 2 according to one embodiment. In the chamber body 430d, the first and second gas injection passages 282a, 282b, the first and second purge gas inlets 284a, 284b, and the first and second exhaust ports 272a, 272b are positioned at an obtuse angle α with respect to the second reference plane 207 (e.g., an obtuse angle with respect to the longitudinal axis of the chamber body 430). The top view of the chamber body 430d illustrates the relationship between the opening 236, the first and second gas injection passages 282a, 282b, and the first and second exhaust ports 272a, 272b. The chamber body 430d shown in FIG. 5D includes an equalization port 240.

[0089]

[0111] 5D, the first gas injection passage 282a, the first purge gas inlet 284a, and the first exhaust port 272a are all positioned parallel to and in line with one another along a fourth flowpath plane 410d. The second gas injection passage 282b, the second purge gas inlet 284b, and the second exhaust port 272b are also positioned parallel to and in line with one another along another fourth flowpath plane 410d. The openings 236 in both the first and second body sections 415a, 415b are angled with the first and second gas injection passages 282a, 282b, the first and second purge gas inlets 284a, 284b, and the first and second exhaust ports 272a, 272b. The opening 236 on the first chamber side 101a is adjacent to and partially located below the first gas injection passage 282a and the first exhaust port 272a. The opening 236 is partially located below the first gas injection passage 282a and the first purge gas inlet 284a. The opening 236 on the second chamber side 201b is adjacent to and partially located below the second gas injection passage 282b and the second exhaust port 272b. The opening 236 is partially located below the second gas injection passage 282b and the second purge gas inlet 284b.

[0090]

[0112] The equalization port 240 is disposed between the first and second body sections 415a, 415b. In the embodiment shown in Figure 5D, the equalization port 240 connects the first and second process volumes 224, 226 to one another.

[0091]

[0113] The gas inlet chord length 404 and the exhaust outlet chord length 406 in Figure 5D are defined similarly to the gas inlet chord length 404 and the exhaust outlet chord length 406 in Figures 5A-5C. The process gas flow passage 408 in Figure 5D is also defined similarly to the process gas flow passage 408 in Figures 5A-5C. In the embodiment shown in Figure 5D, the process gas flow passage 408 moves at an angle α relative to the reference plane 203 and the second reference plane 207 of the chamber body 430d and moves toward the center wall 232 of the chamber body 430d. Process gas flowing from the first gas inlet passage 282a flows toward the first exhaust outlet 272a, and process gas flowing from the second gas inlet passage 282b flows toward the second exhaust outlet 272b.

[0092]

[0114] As shown in FIGS. 5A-5C, each of the first and second gas injection passages 282a, 282b and the first and second exhaust ports 272a, 272b is bisected by a fourth flow plane 410d. The fourth flow plane 410d extends through each of the first and second body sections 415a, 415b. The fourth flow plane 410d is parallel to the flow of process gas from the first and second gas injection passages 282a, 282b to the first and second exhaust ports 272a, 272b. In the embodiment shown in FIG. 5D, the fourth flow plane 410d is disposed at an obtuse angle α with respect to the second reference plane 207 when angled as an interior angle toward the reference plane 203. The angle α is the angle of the inner side of the second flow plane 410b, closer to the opening 236. In the embodiment of FIG. 5D, the angle α is approximately 135 degrees. In one or more embodiments, the angle α is between about 100 degrees and about 170 degrees, for example, between about 110 degrees and about 160 degrees, for example, between about 120 degrees and about 150 degrees, for example, between about 125 degrees and about 145 degrees, for example, between about 130 degrees and about 140 degrees.

[0093]

[0115] In the embodiment shown in FIG. 5D , the shared exhaust conduit 271 can be more easily used to remove process gases from the first and second chamber sides 201 a, 201 b. Because the first and second exhaust ports 272 a, 272 b are closer to each other, shorter gas conduits are utilized to transport exhaust gases from the first and second processing volumes 224, 226 to the vacuum pump 210. In embodiments where the chamber body 430 d is a monolithic body, the first and second exhaust ports 272 a, 272 b can be combined into a single exhaust. The shorter gas conduits and single exhaust reduce chamber costs. The use of a single vacuum pump 210 further saves on equipment costs. The use of a shared exhaust conduit 271 simplifies exhaust maintenance and reduces overall process chamber downtime when cleaning the exhaust system.

[0094]

[0116] In the embodiment shown in Figures 5C and 5D, the side heat sources 418a-418d are at least partially horizontally offset from the first and second gas injection passages 282a, 282b, the first and second purge gas inlets 284a, 284b, and the first and second exhaust outlets 272a, 272b.

[0095]

[0117] Figure 5E is a schematic top view of the chamber body 230 shown in Figure 2, according to one embodiment. The chamber body 230 is similar to the chamber body 430b shown in Figure 5B and includes one or more of the aspects, features, components, operations, and / or properties thereof.

[0096]

[0118] In the embodiment shown in Figure 5E, the first gas injection passage 282a and the first purge gas inlet 284a are interchanged with the first exhaust port 272a, compared to that shown in Figure 5B. In the embodiment shown in Figure 5E, the second gas injection passage 282b and the second purge gas inlet 284b are interchanged with the second exhaust port 272b, compared to that shown in Figure 5B.

[0097]

[0119] Figure 6 is a schematic cross-sectional side view of a processing device 600 according to one embodiment. The cross-section shown in Figure 6 is taken along section 6-6 shown in Figure 5A. The device 600 is similar to the processing device 200 shown in Figure 2 and includes one or more of its aspects, features, components, operations, and / or properties.

[0098]

[0120] The present disclosure contemplates that each of the liners 220 may include (or be at least partially replaced by) a transparent window that allows radiant energy from the side heat sources 418a-418d to pass through and reach one or more heat shields (such as one or more heat shields 2010 described in connection with FIG. 2) and / or the first and second substrates 255, 259.

[0099]

[0121] Each of the side heat sources 418a-418d is positioned at a height (such as height H1 shown in FIG. 6) that is vertically aligned between one or more first upper heat sources 206a and one or more first lower heat sources 238a. Each of the side heat sources 418a-418d is positioned at a height that is vertically aligned between one or more second upper heat sources 206b and one or more second lower heat sources 238b. In one or more embodiments, the heights are referenced to the bottom 234.

[0100]

[0122] The present disclosure contemplates that one or more of the side heat sources 418a, 418b, 418c, 418d can be positioned within a respective annular ring that at least partially surrounds each of the first cassette 257 and the second cassette 261. Each annular ring can completely or partially surround the respective cassette 257, 261. In embodiments in which a heat shield is used in each processing volume 224, 226, the annular ring can be positioned to completely or partially surround the respective heat shield.

[0101]

[0123] One or more side sensors 281 (e.g., one or more pyrometers) can be used to measure temperatures within the first and second processing spaces 224, 226 from each side of the first and second processing spaces 224, 226. The side sensors 281 are arranged in multiple sensor levels (two sensor levels are shown in FIG. 6). In one or more embodiments, the number of sensor levels is equal to the number of levels of the cassettes 257, 261. Each sensor level corresponds to a respective level of the cassettes 257, 261 such that one or more side sensors at each sensor level are configured to measure temperatures (e.g., substrate and / or support temperatures) at the respective level. Each side sensor 281 can be oriented toward (e.g., oriented diagonally downward) the substrates 255 and arcuate supports 263 at the respective level of each cassette 257, 261 (see, for example, the side sensors 281 shown in FIGS. 14 and 19).

[0102]

[0124] 7 is a schematic cross-sectional side view of a processing apparatus 700 according to one embodiment. The apparatus 700 is similar to the apparatus 600 shown in FIG. 6 and includes one or more of the aspects, features, components, operations, and / or properties thereof.

[0103]

[0125] In the embodiment shown in FIG. 7, the second chamber side 101b is omitted. The center wall 232 can be identical to the chamber body 230. The walls 232 (side walls in FIG. 7) can be integrated with the chamber body 230 as a single side wall. The present disclosure contemplates that one or more heat shields 2010 can be disposed within the first processing space 224. FIG. 8 illustrates steps of a method 800 for batch processing multiple substrates, according to one embodiment. The method 800 uses a shared gas panel, one or more shared exhaust conduits, and / or a shared exhaust plenum. The method 800 can use any of the apparatus, aspects, features, components, properties, and / or operations described in connection with one or more of FIGS. 1-7.

[0104]

[0126] Step 801 includes simultaneously loading a first substrate onto a first cassette positioned in a first processing space and a second substrate onto a second cassette positioned in a second processing space. The first substrate is one of a plurality of first substrates supported by the first cassette, and the second substrate is one of a plurality of second substrates supported by the second cassette. To save transfer time and improve overall throughput, the two cassettes are simultaneously loaded with substrates by a transfer robot (such as the transfer robot 110 shown in FIG. 1). That is, the operation of power and actuating components, such as motors, slit valves, heat sources, pressure and flow controllers, before, during, and after the substrate passes through the openings 236 of the two processing spaces occurs simultaneously (e.g., within a few seconds) between the two chamber sides having the two processing spaces 224, 226.

[0105]

[0127] Step 802 includes simultaneously moving the first pedestal assembly and the second pedestal assembly to elevate and continuously rotate the first cassette relative to the first plurality of gas injection passages and to elevate and continuously rotate the second cassette relative to the second plurality of gas injection passages. In one or more embodiments, the first and second pedestal assemblies continue to rotate during steps 803, 804, and 806.

[0106]

[0128] Step 803 of the method includes simultaneously supplying one or more process gases to a first processing space and a second processing space of the dual chamber body at substantially the same flow rate, substantially the same gas temperature, and substantially the same pressure. The term "substantially" in the context of method 800 includes a difference of 5% or less. The first processing space includes a first cassette (on a first pedestal assembly) supporting a plurality of first substrates disposed therein, and the second processing space includes a second cassette (on a second pedestal assembly) supporting a plurality of second substrates disposed therein.

[0107]

[0129] One or more process gases flow from a shared gas panel. The one or more process gases may be any suitable process gases used in epitaxial deposition processes. The process gases may include a Group IV precursor gas, a Group V precursor gas, and / or a Group III precursor gas. In one or more embodiments, a mixture of different process gases may be utilized in step 803. In one or more embodiments, the process gases may include silicon-containing precursors such as silane, halogenated silanes, and / or any combination thereof. Silanes include silane (SiH), disilane (SiH), trisilane (SiH), tetrasilane (SiH), and tetrasilane (SiH). 10 ) with the empirical formula Si x H (2x+2) and higher silanes represented by the formula: Halogenated silanes may include monochlorosilane (MCS), dichlorosilane (DCS), trichlorosilane (TCS), hexachlorodisilane (HCDS), octachlorotrisilane (OCTS), silicon tetrachloride (STC), and / or any combination thereof. One or more process gases may include a germanium-containing precursor. One or more process gases may include a precursor gas. The precursor gas may include, for example, phosphorus, boron, arsenic, gallium, and / or aluminum depending on the desired conductive properties of the deposited epitaxial layer. One or more process gases may include an etchant gas. The etchant gas may include any gas containing halogen molecules, such as, for example, hydrogen chloride (HCl), chlorine (Cl), and / or hydrogen fluoride (HF). One or more process gases may include a carrier gas. The carrier gas may include, for example, nitrogen (N2), argon (Ar), helium (He), and / or hydrogen (H2).

[0108]

[0130] One or more process gases flowing from the gas panel 208 can be split, for example, using a multi-channel flow controller. The one or more process gases then flow through the first and second gas injection passages 282a, 282b and enter the first and second processing spaces 224, 226. The split one or more process gases flow through both the first and second gas injection passages 282a, 282b at substantially the same flow rate. Additional equipment elements (not shown), such as flow controllers, valves, and / or pumps, may be present along the process gas flow path. The additional equipment elements may be positioned between the gas panel 208 and the first and second gas injection passages 282a, 282b. The additional flow control elements may facilitate equal distribution of the process gas flow between the first and second processing spaces 224, 226.

[0109]

[0131] Step 804 of method 800 includes simultaneously heating the first process space and the second process space to substantially the same space temperature. The heating can include simultaneously heating the first substrate and the second substrate to substantially the same substrate temperature.

[0110]

[0132] Step 806 of method 800 includes flowing one or more process gases over the front and back surfaces of a first substrate in the first processing space and over the front and back surfaces of a second substrate in the second processing space. The one or more process gases may be supplied onto the substrates from the first and second gas injection passages 282a, 282b. Flowing the one or more process gases over the front and back surfaces of the substrate facilitates an epitaxial growth process that deposits films on both the front and back surfaces of the substrate. The present disclosure contemplates that the one or more process gases may be flowed over one of the front or back surfaces (e.g., the front surface) of the substrate for single-sided deposition.

[0111]

[0133] Step 808 of method 800 includes exhausting one or more process gases from the first and second processing spaces through a shared exhaust. The shared exhaust may include a shared exhaust plenum. The shared exhaust plenum may include the shared exhaust conduit 271 and / or the second shared exhaust conduit 228 discussed herein. The process gases are exhausted from the first and second processing spaces 224, 226 through the first and second exhaust ports 272a, 272b before entering the shared exhaust conduit 271. After the one or more process gases enter the shared exhaust conduit 271, the one or more process gases are removed by the pump 210 through the shared exhaust conduit 228.

[0112]

[0134] Step 810 of method 800 includes simultaneously moving the first and second pedestal assemblies to orient the first and second cassettes relative to the opening 236. Once oriented, the first and second pedestal assemblies are simultaneously lowered to engage the lift pins with the first and second substrates, thereby allowing the first and second substrates to be removed from the first and second processing spaces (through the opening 236). FIG. 9 is a schematic top view of a single upper window assembly 900 positioned above both the first and second chamber sides 201 a and 201 b of the chamber body 230 of FIG. 2, according to one embodiment. The single upper window assembly 900 includes a single upper window 916 and the chamber body 230. The single upper window 916 includes two inner windows 912 a, 912 b. The two inner windows 912a, 912b are a first inner window 912a disposed over the first processing space 224 shown in Figure 2 and a second inner window 912b disposed over the second processing space 226 shown in Figure 2. An outer window support 914 is disposed around the first and second inner windows 912a, 912b and supports the single upper window assembly 900 along support grooves similar to the support grooves 304.

[0113]

[0135] In embodiments in which a single upper window assembly 900 is used, a portion of the single upper window 916 is positioned over the center of the center wall 232. The support groove 304 of the single upper window 916 is shaped similar to two overlapping ellipses or circles, and thus the single upper window 916 has an outer contour similar to that of an infinity symbol, the number eight, or a lemniscate. The upper window assembly 900 may be utilized in the embodiments shown in Figures 2-4, as well as in Figures 5A-5E.

[0114]

[0136] Although two processing chamber sides with a shared gas panel and exhaust system are described, the embodiments disclosed herein may be expanded to include additional processing chamber sides. In one or more embodiments, there may be three or four processing chamber sides positioned adjacent to one another and having a shared chamber body, such as chamber body 230. A single processing space may also be used, as shown in FIG.

[0115]

[0137] 10 is a schematic cross-sectional side view of a processing apparatus 1000 according to one embodiment. Processing apparatus 1000 is similar to processing apparatus 700 shown in FIG. 7 and includes one or more of the aspects, features, components, operations, and / or properties thereof.

[0116]

[0138] The apparatus 1000 includes a plurality of gas injection passages 1082 formed in the chamber body 230 and in fluid communication with the processing space 224, and one or more gas exhaust passages 1072 (several are shown in FIG. 10 ) formed in the chamber body 230 opposite the plurality of gas injection passages 1082. The one or more gas exhaust passages 1072 are in fluid communication with the processing space 224. Each of the plurality of gas injection passages 1082 and the one or more gas exhaust passages 1072 is formed through one or more sidewalls of the chamber body 230 and through one or more liners 1020 lining the one or more sidewalls of the chamber body 230.

[0117]

[0139] Each gas inlet passage 1082 includes a gas channel 1085 formed in the chamber body 230 and one or more gas openings 1086 (two and three are shown in FIG. 10 ) formed in one or more liners 1020. One or more supply conduit systems are in fluid communication with the gas inlet passages 1082. In FIG. 10 , an inner supply conduit system 1021 and an outer supply conduit system 1022 are in fluid communication with the gas inlet passages 1082. The inner supply conduit system 1021 includes multiple inner gas boxes 1023 attached to the chamber body 230 and in fluid communication with the inner set of gas inlet passages 1082. The outer supply conduit system 1022 includes multiple outer gas boxes 1024 attached to the chamber body 230 and in fluid communication with the outer set of gas inlet passages 1082.

[0118]

[0140] The processing apparatus 1000 includes a flow guide structure 1050 positioned within the processing space 224. The flow guide structure 1050 includes one or more first flow dividers 1051 (three are shown in FIG. 10 ) that divide the processing space into multiple flow levels 1053 (four flow levels are shown in FIG. 1 ). The flow guide structure 1050 includes one or more second flow dividers 1052 that intersect the one or more first flow dividers 1051 and are oriented to divide each flow level 1053 of the multiple flow levels 1053 into multiple flow sections 1054 (two flow sections 1054 are shown for each flow level 1053 in FIG. 10 ). 10, the first flow dividers 1051 each include a ring, and the one or more second flow dividers 1052 each include a cylindrical sleeve that surrounds an innermost one of the flow sections 1054. The one or more first flow dividers 1051 are coupled to one or more liners 1020.

[0119]

[0141] The multiple gas injection passages 1082 are positioned as multiple injection levels, with each gas injection passage 1082 corresponding to one of the multiple injection levels. Each injection level aligns with a respective flow level 1053. The gas injection passages 1082 at each injection level open into the outermost flow section 1054 at the respective flow level. In the embodiment shown in FIG. 10, two or three gas openings 1086 are grouped at each flow level, and the gas openings 1086 open into the outermost flow section 1054 at the respective flow level.

[0120]

[0142] The apparatus 1000 includes a thermal shield structure 1060 positioned within the processing space 224. The thermal shield structure 1060 includes a first shield plate 1061 positioned inside the one or more second flow dividers 1052 and a second shield plate 1062. The second shield plate 1062 is oriented intersecting the first shield plate 1061 and is at least partially supported by the one or more liners 1020. The first shield plate 1061 may be a cylindrical sleeve.

[0121]

[0143] Each of the one or more second flow dividers 1052 includes a plurality of divider inlet openings 1055 and a plurality of divider outlet openings 1056 formed therein. The divider outlet openings 1056 are opposite the divider inlet openings 1055. As shown in FIG. 10 , two or three of the divider inlet openings 1055 and two or three of the divider outlet openings 1056 are grouped in each of the flow levels 1053.

[0122]

[0144] The first shield plate 1061 includes a plurality of shield inlet openings 1065 and a plurality of shield outlet openings 1066 formed therein. The shield outlet openings 1066 are opposite the shield inlet openings 1065. The plurality of divider inlet openings 1055 are offset in the XY plane from the plurality of shield inlet openings 1065.

[0123]

[0145] Each of the one or more liners 1020, the one or more first flow dividers 1051, the one or more second flow dividers 1052, the first shielding plate 1061, and the second shielding plate 1062 is formed of one or more of quartz, silicon carbide (SiC), or graphite coated with SiC.

[0124]

[0146] The apparatus 1000 includes a cassette 1030 positioned within the processing space 224 and at least partially supported by the pedestal assembly 250. The cassette 1030 is positioned inside a first shield plate 1061. A preheat ring 1011 is positioned outside the cassette 1030. The preheat ring 1011 is coupled to and / or at least partially supported by one or more liners 1020. One or more second flow dividers 1052 are coupled to and / or at least partially supported by the preheat ring 1011. The cassette 1030 includes a first cassette plate 1032 and a second cassette plate 1031 spaced apart from the first cassette plate 1032.

[0125]

[0147] During an operation (such as during an epitaxial deposition operation), one or more process gases P1 are supplied to the processing space 224 through the inner supply conduit system 1021 and the outer supply conduit system 1022 and through the plurality of gas injection passages 1082. The one or more process gases P1 are supplied from one or more gas sources 1096 that are fluidly connected to the plurality of gas injection passages 1082. One or more flows of the one or more process gases P1 are divided into multiple flow levels 1053. Dividing the one or more process gases into multiple flow levels 1053 facilitates uniform processing (e.g., deposition) on the substrate, center-to-edge uniformity, and process tunability.

[0126]

[0148] The processing apparatus 1000 includes an exhaust conduit system 1090. One or more process gases P1 can be exhausted through exhaust gas openings formed in one or more liners 1020, exhaust gas channels formed in the chamber body 230, and then through an exhaust gas box 1091. From the exhaust gas box 1091, the one or more process gases P1 can flow to an optional common exhaust box 1092 and then be pumped through conduits using one or more pumping devices 1097 (such as one or more vacuum pumps).

[0127]

[0149] A purge gas P2 supplied from a purge gas source 1029 is introduced into the bottom region 205 of the processing space 224 through one or more purge gas inlets 1084 formed in one or more sidewalls of the chamber body 230.

[0128]

[0150] The one or more purge gas inlets 1084 are positioned at a level below the gas injection passages 1082. If one or more liners 1020 are used, a portion of the one or more liners 1020 may be positioned between the gas injection passages 1082 and the one or more purge gas inlets 1084. In either case, the one or more purge gas inlets 1084 are configured to direct the purge gas P2 in a generally radially inward direction. The one or more purge gas inlets 1084 may be configured to direct the purge gas P2 in an upward direction. During the film formation process, the pedestal assembly 250 is positioned to promote the purge gas P2 to flow generally along a flow path across the backside of the first cassette plate 1032. The purge gas P2 exits the bottom region 105 and is exhausted out of the processing apparatus 1000 through one or more purge gas exhaust passages 1002 located on the opposite side of the processing space 224 from the one or more purge gas inlets 1084.

[0129]

[0151] Although not shown in FIG. 10 for purposes of visual clarity, the present disclosure contemplates that the processing apparatus 1000 may include one or more side heat sources (such as one or more side heat sources 418a, 418b shown in FIG. 7).

[0130]

[0152] FIG. 11 is an enlarged schematic cross-sectional side view of the processing apparatus 1000 shown in FIG. 10, according to one embodiment.

[0131]

[0153] The cassette 1030 includes a plurality of levels 1111 positioned between a first cassette plate 1032 and a second cassette plate 1031 .

[0132]

[0154] Each level 1111 includes an arcuate support 1112 having one or more inner ledges 1113 that support substrates 255. A section of the cassette 1030 is shown in FIG. 11. The cassette 1030 includes a first level 1111a including a first arcuate support 1112a having a first inner ledge 1113a, and a second level 1111b including a second arcuate support 1112b having a second inner ledge 1113b. The first arcuate support 1112a and the second arcuate support 1112b are positioned between the first cassette plate 1032 and the second cassette plate 1031.

[0133]

[0155] The cassette 1030 includes a first opening 1115 on the exterior side of the first arcuate support 1112a and a second opening 1116 between the first arcuate support 1112a and the second arcuate support 1112b. A level spacing LS1 between the first level 1111a and the second level 1111b is 15 mm or greater. The level spacing LS1 is defined between the first support surface 1116a of the first inner ledge 1113a and the second support surface 1116b of the second inner ledge 1113b. In one or more embodiments, the level spacing LS1 is 25 mm or greater. In one or more embodiments, the level spacing LS1 is within a range of 38 mm to 52 mm. In one or more embodiments, the level spacing LS1 is within a range of 40 mm to 70 mm.

[0134]

[0156] A level spacing LS1 is available between each of the plurality of levels 1111. As an example, the cassette 1030 includes a third level 1111c including a third arcuate support 1112c positioned between the second arcuate support 1112b and the second cassette plate 1031. The third arcuate support 1112c has a third inner ledge 1113c. The level spacing LS1 is between the third arcuate support 1112c and the second arcuate support 1112b.

[0135]

[0157] A substrate spacing SS1 is available between each of two adjacent substrates 255. The substrate spacing SS1 is defined between the outer surfaces of the opposing substrates. In one or more embodiments, the substrate spacing SS1 between two adjacent substrates 255 is equal to the level spacing LS1 minus the thickness of one of the substrates 255 (e.g., the lower substrate 255 of the two substrates 255). In one or more embodiments, the thickness is approximately 0.75 mm. Other thickness values are contemplated. In one or more embodiments, the substrate spacing SS1 is a ratio of the diameter of one of the substrates (e.g., the lower substrate 255 of the two substrates 255), and the ratio is 1:12 or greater. In one or more embodiments, the ratio is in the range of 1:8 to 1:5.7. In one or more embodiments, the substrate spacing SS1 is 15 mm or greater. In one or more embodiments, the substrate spacing SS1 is 25 mm or greater. In one or more embodiments, the substrate spacing SS1 is in the range of 38 mm to 72 mm, for example, in the range of 38 mm to 52 mm.

[0136]

[0158] The level spacing LS1 and / or substrate spacing SS1 promote increased deposition film growth rate, improved process uniformity, and process adjustability, while promoting reduced process time (e.g., cycle time), increased chamber capacity, and reduced size and footprint (e.g., of the chamber).

[0137]

[0159] Each of the shield inlet openings 1065 and each of the shield outlet openings 1066 are aligned between two respective arcuate supports 1112 (as shown for the shield outlet openings 1066 in FIG. 11 ). The locations of the shield inlet openings 1065 and the shield outlet openings 1066 facilitate separately supplying one or more process gases P1 to the gaps between adjacent substrates 255, thereby promoting process uniformity and process tunability.

[0138]

[0160] The cassette 1030 includes a plurality of mounting posts 1081 that extend through the arcuate supports 1112 (including a first arcuate support 1112a, a second arcuate support 1112b, and a third arcuate support 1112c).

[0139]

[0161] Each mounting post 1081 of the plurality of mounting posts 1081 includes a ledge interface between the respective mounting post and the arc-shaped support 1112. In one or more embodiments, the ledge 1120 may extend outward relative to the mounting post 1081. In one or more embodiments, the ledge may extend inward relative to the inner surface of the arc-shaped support 1112, such as into a groove formed in the outer surface of the mounting post 1081. The ledge 1120 may include, for example, one or more pins or one or more arc-shaped ring segments. Figure 12 is a schematic top view of the processing apparatus 1000 shown in Figures 10 and 11, according to one embodiment.

[0140]

[0162] The gas injection passage 1082 of each injection level includes one or more central gas openings 1086a, one or more first outer gas openings 1086b on a first side of the one or more central gas openings 1086a, and one or more second outer gas openings 1086c on a second side of the one or more central gas openings 1086a. The gas injection passage 1082 of each injection level includes one or more first intermediate gas openings 1086d between the one or more central gas openings 1086a and the one or more first outer gas openings 1086b, and one or more second intermediate gas openings 1086e between the one or more central gas openings 1086a and the outer gas openings 1086c, which correspond to two edge zones of the substrate.

[0141]

[0163] Gas openings 1086a-1086e correspond to five flow zones of control and adjustability for each substrate. By way of example, one or more central gas openings 1086a correspond to a central zone of the substrate, although other numbers of flow zones are contemplated (such as up to 10 or more flow zones).

[0142]

[0164] Figure 13 is a schematic perspective view of the cassette 1030 shown in Figures 10 and 11, according to one embodiment. In the embodiment shown in Figure 10, the cassette 1030 includes twelve levels 1111 supporting twelve substrates 255. In the embodiment shown in Figure 13, the cassette 1030 includes three levels 1111 configured to support up to three substrates 255 during simultaneous processing. The present disclosure contemplates varying numbers of levels 1111 (e.g., two) for the cassette 1030 to support varying numbers of substrates (e.g., two).

[0143]

[0165] Each of the arcuate supports 1112 of the level 1111 is a ring or one or more ring segments. In the embodiment shown in FIG. 13, each arcuate support 1112 includes a gap 1301 such that each arcuate support 1112 is a single C-ring segment. The cassette 1030 includes a base segment 1305, to which the arms of the second support frame 299 can be coupled through a first cassette plate 1032. The first cassette plate 1032 can be a single piece or can include multiple pieces (such as the two pieces 1032a and 1032b shown in FIG. 10). The mounting post 1081 extends at least partially through the second cassette plate 1031 at a first end and at least partially through the base segment 1305 at a second end.

[0144]

[0166] 14 is a schematic, partial cross-sectional side view of a cassette 1430 and a flow guide structure 1450 according to one embodiment. The cassette 1430 has two levels that support two substrates 255a, 255b during processing. The flow guide structure 1450 includes a single first flow divider 1051. Using the first flow divider 1051, the flow guide structure 1450 provides two separate flows of process gas (which may be the same or different process gases), one for each of the two substrates 255a, 255b. As an example, the flow guide structure 1450 can provide a first process gas P1 flowing over the first substrate 255a and a second process gas P2 flowing over the second substrate 255b.

[0145]

[0167] For each level of the cassette 1430, the ceiling (which defines the ceiling of the gas flow path above the substrates corresponding to the level) is defined by the lower surface of a barrier above the level. In one or more embodiments, except for the top level, the ceiling of each level of the cassette 1430 may be defined by the lower surface 1471 of an adjacent support (e.g., arcuate support 1112b) above that level and / or the lower surface of a substrate (e.g., substrate 255b) supported by the adjacent support. Other barriers are also contemplated. For the top level, the ceiling may be defined by the lower surface 1472 of the second cassette plate 1031 or another barrier. The first plate 1032 is positioned a first plate spacing PS1 from the bottom support 1112a, and the second cassette plate 1031 is positioned a second plate spacing PS2 from the top support 1112b. In one or more embodiments, one or more of the first plate spacing PS1 and / or the second plate spacing PS2 is equal to the level spacing LS1 minus the height H1 of the supports 1112a, 1112b. The present disclosure contemplates that the first cassette plate 1032 may be omitted and the second cassette plate 1031 may be referred to as the cassette plate or the first cassette plate.

[0146]

[0168] In one or more embodiments, the first cassette plate 1032 is used when the second cassette plate 1031 is formed of an opaque material.

[0147]

[0169] In one or more embodiments, the cassettes described herein (such as cassette 1430 and / or cassette 230) may include two total levels (supporting two total substrates) or three total levels (supporting three total substrates) to promote improved deposition uniformity and device performance while facilitating increased throughput with a small chamber size and footprint.

[0148]

[0170] FIG. 15 is an enlarged schematic cross-sectional side view of the processing apparatus 1000 shown in FIG. 10, according to one embodiment. In the embodiment shown in FIG. 15, the cassette 1030 includes four levels 1111a-1111d supporting four substrates 255. The two outermost substrates 255 utilize a second level spacing LS2 and substrate spacing SS2. The inner substrates 255 utilize a level spacing LS1 and substrate spacing SS1. The second level spacing LS2 is smaller than the level spacing LS1, and the second substrate spacing SS2 is smaller than the substrate spacing SS1. In one or more embodiments, the level spacing LS1 is two to three times larger than the second level spacing LS2 and / or the substrate spacing SS1 is two to three times larger than the second substrate spacing SS2.

[0149]

[0171] FIG. 16 is a schematic perspective view of a method 1600 for processing multiple substrates, according to one embodiment.

[0150]

[0172] A step 1602 of the method 1600 includes positioning a first substrate within a processing volume of a chamber. The first substrate has a diameter.

[0151]

[0173] Step 1604 includes positioning a second substrate within the process space and at a substrate spacing SS1 from the first substrate. In one or more embodiments, the substrate spacing SS1 is a ratio of the diameter of the first substrate.

[0152]

[0174] Step 1606 includes flowing one or more process gases into the processing space.

[0153]

[0175] Step 1608 includes heating the first substrate and the second substrate. It is contemplated that step 1608 may occur before, after, or simultaneously with step 1606.

[0154]

[0176] Step 1610 includes simultaneously depositing one or more layers on each of the first and second substrates. In one or more embodiments, the one or more layers are simultaneously deposited on each of the first and second substrates at an average growth rate of 10 Angstroms / second or greater.

[0155]

[0177] FIG. 17 is a schematic illustration of a graph 1700 plotting average growth rate versus substrate spacing, according to one embodiment.

[0156]

[0178] As shown by profile 1702, the average growth rate (e.g., epitaxial growth rate) can increase as the substrate spacing increases. Beyond a certain point, increasing the substrate spacing does not necessarily result in a corresponding increase in the average growth rate.

[0157]

[0179] The use of the subject matter described herein (such as level spacing LS1 and / or substrate spacing SS1) promotes high average growth rates while facilitating process tunability, reduced size and footprint (e.g., of the chamber).

[0158]

[0180] 18 is a schematic diagram of a graph 1800 plotting gas velocity versus position on a substrate, according to one embodiment. Position refers to position along the diameter of the substrate, with "0" representing the center of the substrate. As shown by profile 1802, the gas velocity is relatively continuous across the diameter of the substrate surface, such as from the leading edge of the substrate to the center of the substrate.

[0159]

[0181] Use of the subject matter described herein (such as level spacing LS1 and / or substrate spacing SS1) promotes a more continuous gas flow rate for gas flowing over the surface of the substrate.

[0160]

[0182] Figure 19 is a schematic, partial cross-sectional side view of a cassette 1930 and flow guide structure 1450 shown in Figure 14, according to one embodiment. The two supports of the cassette 1930 each include a susceptor 1912a, 1912b that supports a respective substrate 255a, 255b. Each susceptor 1912a, 1912b includes a pin opening 1920 through which lift pins 289 can pass to contact and lift the substrates 255a, 255b.

[0161]

[0183] Advantages of the present disclosure include reduced processing time, increased chamber capacity, increased growth rate of deposited films, improved device performance, more continuous gas flow velocity over the substrate, more uniform device performance across multiple substrates, more uniform and stable thermal processing across multiple substrates, increased throughput, and reduced size and footprint (e.g., of the chamber). Advantages also include uniform tunability, such as process temperature control and tunability, gas parameter control and tunability, and substrate center-to-edge control and tunability. Advantages also include improved device performance and increased application modularity. As an example, batch processing can be used for relatively complex deposition processes with a relatively small footprint and relatively high throughput, while maintaining or improving growth rate and device performance. Such advantages can be enhanced, for example, for inner substrates rather than the outermost substrates of a plurality of substrates supported on a cassette.

[0162]

[0184] These advantages of the present application are furthered by the embodiments of the present disclosure. It is contemplated that the aspects described herein may be combined. For example, one or more features, aspects, components, operations, and / or characteristics of system 100, processing device 200, chamber body 230, chamber body 390, chamber body 430a, chamber body 430b, chamber body 430c, chamber body 430d, processing device 600, processing device 700, method 800, single upper window assembly 900, processing device 1000, cassette 1030, flow guide structure 1050, cassette 1430, flow guide structure 1450, and / or method 1600 may be combined. Furthermore, it is contemplated that any one or more combinations may achieve the aforementioned advantages.

[0163]

[0185] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the claims that follow.

Claims

1. 1. An apparatus for substrate processing, comprising: A chamber body, Processing space, a plurality of gas injection passages formed in the chamber body and fluidly connected to the processing space; and one or more gas exhaust passages formed in the chamber body opposite the plurality of gas injection passages, the one or more gas exhaust passages being in fluid communication with the processing space; a chamber body including: one or more heat sources configured to generate heat; a pedestal assembly positioned within the processing space; a cassette positioned within the processing space and at least partially supported by the pedestal assembly, the cassette comprising: a plurality of levels arranged perpendicular to one another, each level of the plurality of levels including a support surface configured to support a substrate; Including, a level spacing between adjacent levels of the plurality of levels being 25 mm or greater, the level spacing being defined between the support surfaces of the adjacent levels; An apparatus comprising:

2. The device of claim 1 , wherein the level spacing is in the range of 40 mm to 70 mm, and the number of levels in the plurality of levels is two or three.

3. The apparatus of claim 1 , wherein each level of the plurality of levels includes a susceptor having a pin opening.

4. The plurality of levels are: a first level including a first arcuate support having a first inner ledge, the first inner ledge having a first support surface; a second level including a second arcuate support having a second inner ledge, the second inner ledge having a second support surface; Including, a first opening on the outside of the first arc-shaped support, and a second opening between the first arc-shaped support and the second arc-shaped support; 2. The apparatus of claim 1, wherein each of the first and second arcuate supports is a ring or one or more ring segments, and the cassette further includes a plurality of mounting posts extending through the first and second arcuate supports.

5. The cassette comprises: a cassette plate positioned at a plate spacing from the second arcuate support, the plate spacing being equal to the level spacing minus the height of the second arcuate support; The apparatus of claim 4 further comprising:

6. The cassette comprises: a third level including a third arcuate support having a third inner ledge, said third inner ledge having a third support surface; further comprising 5. The apparatus of claim 4, wherein a second level spacing between the second level and the third level is smaller than the level spacing, and the second level spacing is defined between the second support surface of the second inner ledge and the third support surface of the third inner ledge.

7. a plurality of side sensors configured to measure the temperature within the processing space from a side of the processing space, the side sensors being arranged in a plurality of sensor levels corresponding to the plurality of levels of the cassette, one or more side sensors corresponding to each level of the cassette; The apparatus of claim 1 further comprising:

8. the chamber body is a dual chamber body, the processing space is on a first side of a reference surface, the dual chamber body further comprises a second processing space on a second side of the reference surface, and the apparatus comprises: a second pedestal assembly positioned within the second processing space; a second cassette positioned within the second processing space and at least partially supported by the second pedestal assembly, the second cassette comprising: a plurality of second levels arranged perpendicular to one another, each second level of the plurality of second levels including a second support surface configured to support a second substrate; Including, a second cassette, wherein a second level spacing between adjacent second levels of the plurality of second levels is 25 mm or more, and the second level spacing is defined between the second support surfaces of the adjacent second levels; The apparatus of claim 1 further comprising:

9. 1. An apparatus for substrate processing, comprising: A chamber body, Processing space, a plurality of gas injection passages formed in the chamber body; and One or more gas exhaust passages formed in the chamber body opposite the plurality of gas injection passages. a chamber body including: one or more heat sources configured to generate heat; a pedestal assembly positioned within the processing space; a flow guide structure positioned within the processing space, one or more first flow dividers that divide the processing space into a plurality of flow levels; and one or more second flow dividers intersecting the one or more first flow dividers and oriented to divide each flow level of the plurality of flow levels into a plurality of flow sections; a flow guide structure including An apparatus comprising:

10. 10. The apparatus of claim 9, wherein the plurality of gas injection passages are positioned as a plurality of injection levels, each injection level aligned with a respective flow level, and the gas injection passages at each injection level open into the outermost flow section of the respective flow level.

11. The gas injection passages at each injection level are: one or more central gas openings; one or more first outer gas openings on a first side of the one or more central gas openings; one or more second outer gas openings on a second side of the one or more central gas openings; one or more first intermediate gas openings between the one or more central gas openings and the one or more first outer gas openings; one or more second intermediate gas openings between the one or more central gas openings and the one or more second outer gas openings; The apparatus of claim 10, comprising:

12. 10. The apparatus of claim 9, further comprising one or more liners configured alongside one or more sidewalls of the chamber body, the one or more first flow dividers coupled to the one or more liners.

13. a heat shield structure positioned within the processing space, the heat shield structure comprising: a first shielding plate positioned inside the one or more second flow dividers; a second shielding plate oriented transversely to the first shielding plate and at least partially supported by the one or more liners; 13. The apparatus of claim 12, comprising:

14. each of the one or more second flow dividers including a plurality of divider inlet openings and a plurality of divider outlet openings formed therein; The apparatus of claim 13 , wherein the first shield plate includes a plurality of shield inlet openings and a plurality of shield outlet openings formed therein.

15. The apparatus of claim 14 , wherein the plurality of divider inlet openings are offset from the plurality of shield inlet openings.

16. a cassette positioned inwardly of the first shielding plate and at least partially supported by the pedestal assembly, the cassette comprising: a first level including a first support surface configured to support a first substrate; a second level including a second support surface configured to support a second substrate; Including, 14. The apparatus of claim 13, wherein a level gap between the first level and the second level is 25 mm or greater, and the level gap is defined between the first support surface and the second support surface.

17. 14. The apparatus of claim 13, wherein each of the one or more first flow dividers, the one or more second flow dividers, the first shielding plate, and the second shielding plate is formed from one or more of quartz, silicon carbide (SiC), or graphite coated with SiC.

18. 1. A method for processing a plurality of substrates, comprising: Positioning a first substrate having a diameter within a processing volume of the chamber; positioning a second substrate in the processing space at a substrate spacing from the first substrate, the substrate spacing being a ratio of the diameter of the first substrate, the ratio being 1:12 or greater; flowing one or more process gases into the processing space; heating the first substrate and the second substrate; simultaneously depositing one or more layers on each of the first substrate and the second substrate; A method comprising:

19. 19. The method of claim 18, wherein the ratio is in the range of 1:8 to 1:5.

7.

20. 20. The method of claim 19, wherein the one or more layers are simultaneously deposited on each of the first substrate and the second substrate at an average growth rate of 10 Angstroms / second or greater.

Images