Novel molybdenum compound, method for producing the same, and method for producing a molybdenum-containing thin film containing the same

Abstract

The present invention provides a molybdenum compound, a method for producing the same, and a method for producing a molybdenum-containing thin film containing the compound. The novel molybdenum compound exhibits excellent thermal stability and vapor pressure characteristics, allowing thin films using the compound to exhibit uniform and excellent electrical properties.

Description

[Technical Field]

[0001] The present invention relates to a molybdenum compound, a method for producing the same, and a method for producing a molybdenum-containing thin film containing the same. [Background technology]

[0002] Various thin film deposition methods have been developed and applied in the semiconductor device field, which can be, for example, chemical vapor deposition (CVD), atomic layer deposition (ALD), plasma-enhanced chemical vapor deposition (PECVD), plasma-enhanced atomic layer deposition (PEALD), etc.

[0003] In chemical vapor deposition processes, volatile metal precursor forms, including metals such as tungsten and ruthenium, are adsorbed onto a substrate and then reacted or decomposed on the surface to produce a deposit.

[0004] In atomic layer deposition (ALD), reactants are supplied in intermittent steps and decomposed through chemical exchange to form metal-containing thin films. ALD can be performed at lower temperatures than chemical vapor deposition (CVD), which is advantageous not only for thin film formation but also for processing.

[0005] Additionally, plasma-enhanced atomic layer deposition processes provide reactants in the form of a plasma on the surface of the substrate to promote layer growth. Generally, a plasma-enhanced atomic layer deposition system includes a plasma source and optional gas flow regulators with an RF power source.

[0006] With the development of various thin film deposition methods as mentioned above, precursors containing metals have become a very important part. Since thin films grow along with the chemical reaction of metal precursors, it is very important to develop metal precursors that can show improved performance.

[0007] That is, the metal precursor must have sufficient vapor pressure so that it can be easily transported from a vessel containing the gaseous precursor to a reaction chamber, have long-term thermal stability during storage and transportation, and have thermal stability in the gaseous state to control impurities in the thin film formed. Furthermore, the metal precursor must exhibit excellent reactivity with the reactive gas to easily form a thin film on a substrate.

[0008] Meanwhile, molybdenum-containing thin films have low resistivity, high work function, and excellent thermal and chemical stability, and are used in a wide range of fields, such as solar cells, field emission displays, liquid displays, plasma display panels, organic light-emitting devices, and semiconductors. However, there remains a need for research into molybdenum precursors that can be easily applied to various deposition methods and exhibit improved performance. [Prior art documents] [Patent documents]

[0009] [Patent Document 1] Korean Patent Publication No. 10-2021-0024421 [Patent Document 2] Korean Patent Publication No. 10-2021-0024418 Summary of the Invention [Problem to be solved by the invention]

[0010] An object of the present invention is to provide a molybdenum compound that can be useful as a molybdenum-containing precursor for thin film deposition, which has excellent thermal stability and volatility. [Means for solving the problem]

[0011] In one general aspect, there is provided a molybdenum compound represented by Formula 1: [ka] During the ceremony L1 is C1-C5 alkylene; Y1 is N, O, or S; R1 is halogen, C1-C7 alkyl, C1-C7 alkoxy, mono-C1-C7 alkylamino, or di-C1-C7 alkylamino; R2 and R3 are each independently C1-C7 alkyl; R4 to R8 are each independently hydrogen or C1 to C7 alkyl; n is 1 or 2.

[0012] In Chemical Formula 1, L1 may be C1-C3 alkylene, Y1 may be N, O, or S, R1 may be halogen, C1-C5 alkyl, or C1-C5 alkoxy, R2 and R3 may each independently be C1-C5 alkyl, R4 to R8 may each independently be hydrogen or C1-C5 alkyl, and n may be 1 or 2.

[0013] Furthermore, in Chemical Formula 1, L1 may be C1-C3 alkylene, Y1 may be N or O, R1 may be halogen, C1-C5 alkyl, or C1-C5 alkoxy, R2 and R3 each independently represent branched C3-C5 alkyl, R4 to R8 each independently represent hydrogen or linear C1-C3 alkyl, and n may be 1 or 2.

[0014] Molybdenum compounds according to exemplary embodiments of the present invention may be represented by the following Formula 2: [ka] During the ceremony L 11 is C1-C5 alkylene; Y 11 is N, O, or S; R 11 is halogen, C1-C7 alkyl, C1-C7 alkoxy, mono-C1-C7 alkylamino, or di-C1-C7 alkylamino; R 12is C1-C7 alkyl; R 13 ~R 17 are each independently hydrogen or C1-C7 alkyl; n is 1 or 2.

[0015] In Chemical Formula 2, L 11 may be C1-C3 alkylene, and Y 11 may be N or O, and R 11 may be halogen, C1-C5 alkyl, or C1-C5 alkoxy; R 12 may be a branched C3-C5 alkyl, and R 13 ~R 17 may each independently be hydrogen or a straight chain C1-C3 alkyl; n may be 1 or 2.

[0016] The molybdenum compound according to exemplary embodiments of the present invention may be selected from the following compounds: [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka]

[0017] In another general aspect, a method for producing a novel molybdenum compound includes reacting a compound represented by the following formula 11 with a compound represented by the following formula 12 to produce a molybdenum compound represented by the following formula 1: [ka] [ka] R1-MgX (Formula 12) During the ceremony L1 is C1-C5 alkylene; Y1 is N, O, or S; R1 is halogen, C1-C7 alkyl, C1-C7 alkoxy, mono-C1-C7 alkylamino, or di-C1-C7 alkylamino; R2 and R3 are each independently C1-C7 alkyl; R4 to R8 are each independently hydrogen or C1 to C7 alkyl; X and X1 are each independently a halogen; n is 1 or 2.

[0018] Furthermore, a method for producing a molybdenum compound according to an exemplary embodiment of the present invention may include reacting a compound represented by the following Chemical Formula 13 with a compound represented by the following Chemical Formula 14 to produce a compound represented by the following Chemical Formula 11: [ka] [ka] During the ceremony L1 is C1-C5 alkylene; Y1 is N, O, or S; R2 and R3 are each independently C1-C7 alkyl; R4 to R8 are each independently hydrogen or C1 to C7 alkyl; X, X1, and X2 are each independently a halogen; n is 1 or 2.

[0019] In another general aspect, a molybdenum-containing composition for thin film deposition includes a molybdenum compound according to an exemplary embodiment of the present invention.

[0020] In another general aspect, a method for producing a molybdenum-containing thin film includes: a) heating a substrate placed in a chamber; and b) injecting a reactant gas and a molybdenum-containing composition for thin film deposition according to an exemplary embodiment of the present invention into the chamber to produce a molybdenum-containing thin film, wherein the temperature of the substrate may be maintained at 300 to 700°C.

[0021] In yet another general aspect, there is provided a molybdenum-containing thin film produced using a molybdenum compound according to an exemplary embodiment of the present invention. [Effects of the Invention]

[0022] The novel molybdenum compounds of the present invention exhibit excellent thermal stability and vapor pressure properties and may be useful as precursors for the deposition of molybdenum-containing thin films.

[0023] Molybdenum-containing thin films prepared using the novel molybdenum compounds of the present invention as precursors can exhibit uniform and significantly improved electrical properties. [Brief explanation of the drawings]

[0024] [Figure 1] FIG. 1 shows the results of TGA analysis of Examples 1 to 3. [Figure 2] FIG. 2 is a diagram showing the analysis results of vapor pressure in Examples 1 to 3. DETAILED DESCRIPTION OF THE INVENTION

[0025] The molybdenum compound of the present invention, its production method, and the production method of a molybdenum-containing thin film containing the compound will be described in detail below.

[0026] As used herein, the singular forms "a," "an," and "the" may be intended to include the plural forms as well, unless the context indicates otherwise.

[0027] Furthermore, the numerical ranges used in the present invention include all values within the range, including the lower and upper limits, logically derived increments in the form and span of the defined range, all double limit values, and all possible combinations of upper and lower limits in numerical ranges defined in different forms. Unless otherwise defined in the specification of the present invention, values that may fall outside the numerical range due to experimental error or rounding off are also included in the defined numerical range.

[0028] The term "comprising" as used herein is an open-ended statement that is equivalent to terms such as "provided," "containing," "having," or "characterized by," and does not exclude further unrecited elements, materials, or processes.

[0029] The present invention will be described in detail below. Unless otherwise defined, technical and scientific terms used in this specification have the common meanings understood by those skilled in the art to which the present invention belongs, and in the following description, descriptions of known functions and configurations that may unnecessarily obscure the gist of the present disclosure will be omitted.

[0030] The term "alkyl" as used herein refers to a saturated, linear or branched acyclic hydrocarbon having 1 to 7, preferably 1 to 5, more preferably 1 to 3 carbon atoms. Representative saturated linear alkyls include, for example, methyl, ethyl, n-propyl, n-butyl, n-pentyl, n-hexyl, and n-heptyl. Representative saturated branched alkyls include, for example, isopropyl, sec-butyl, isobutyl, tert-butyl, isopentyl, 2-methylhexyl, 3-methylbutyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, 2-methylhexyl, 3-methylhexyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, 2-methylhexyl, 3-methylhexyl, 4-methylhexyl, 5-methylhexyl, 2,3-dimethylbutyl, 2,3-dimethylpentyl, 2,4-dimethylpentyl, 2,3 2,4-dimethylhexyl, 2,5-dimethylhexyl, 2,2-dimethylpentyl, 2,2-dimethylhexyl, 3,3-dimethylpentyl, 3,3-dimethylhexyl, 4,4-dimethylhexyl, 2-ethylpentyl, 3-ethylpentyl, 2-ethylhexyl, 3-ethylhexyl, 4-ethylhexyl, 2-methyl-2-ethylpentyl, 2-methyl-3-ethylpentyl, 2-methyl-4-ethylpentyl, 2-methyl-2-ethylhexyl, 2-methyl-3-ethylhexyl, 2-methyl-4-ethylhexyl, 2,2-diethylpentyl, 3,3-diethylhexyl, 2,2-diethylhexyl, and 3,3-diethylhexyl.

[0031] "Alkoxy" as described herein refers to -O-(alkyl), including -OCH, -OCHCH, -O(CH)CH, -O(CH)CH, -O(CH)CH, -O(CH)CH, -O(CH)CH, etc., where "alkyl" is defined as above.

[0032] "Mono-alkylamino" as described in the present invention refers to -NH(alkyl), including -NHCH, -NHCHCH, -NH(CH)CH, -NH(CH)CH, -NH(CH)CH, -NH(CH)CH, -NH(CH)CH, etc., where the definition of "alkyl" is as defined above.

[0033] The term "dialkylamino" as used herein refers to -N(alkyl)(alkyl), including -N(CH), -N(CHCH), -N((CH)CH), -N(CH)(CHCH), etc., and each "alkyl" is independently defined above.

[0034] The term "halogen" as used herein refers to a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom.

[0035] As used herein, "alkylene" refers to a divalent organic radical derived by removing one hydrogen from an "alkyl," the definition of "alkyl" being as defined above.

[0036] The number of carbon atoms described in the present invention does not include the number of carbon atoms of the substituents, for example, C1-C7 alkyl refers to an alkyl having 1 to 7 carbon atoms, not including the number of carbon atoms of the alkyl substituents.

[0037] The present invention provides a molybdenum compound having an improved vapor pressure and excellent thermal stability, represented by the following chemical formula 1: [ka] During the ceremony L1 is C1-C5 alkylene; Y1 is N, O, or S; R1 is halogen, C1-C7 alkyl, C1-C7 alkoxy, mono-C1-C7 alkylamino, or di-C1-C7 alkylamino; R2 and R3 are each independently C1-C7 alkyl; R4 to R8 are each independently hydrogen or C1 to C7 alkyl; n is 1 or 2.

[0038] The novel molybdenum compound of the present invention, represented by Formula 1, contains two imide groups (=N-), which improves thermal stability, vapor pressure, and reactivity, thereby enabling molybdenum-containing thin films to be more uniform and of higher quality.

[0039] In Chemical Formula 1, L1 may be C1-C3 alkylene, Y1 may be N, O, or S, R1 may be halogen, C1-C5 alkyl, or C1-C5 alkoxy, R2 and R3 may each independently be C1-C5 alkyl, R4 to R8 may each independently be hydrogen or C1-C5 alkyl, and n may be 1 or 2.

[0040] Furthermore, in Chemical Formula 1, L1 may be C1-C3 alkylene, Y1 may be N or O, R1 may be halogen, C1-C5 alkyl, or C1-C5 alkoxy, R2 and R3 may each independently be branched C3-C5 alkyl, R4 to R8 may each independently be hydrogen or linear C1-C3 alkyl, and n may be 1 or 2.

[0041] Molybdenum compounds according to exemplary embodiments of the present invention may be represented by the following Formula 2: [ka] During the ceremony L 11 is C1-C5 alkylene; Y 11 is N, O, or S; R 11 is halogen, C1-C7 alkyl, C1-C7 alkoxy, mono-C1-C7 alkylamino, or di-C1-C7 alkylamino; R 12 is C1-C7 alkyl; R13 ~R 17 are each independently hydrogen or C1-C7 alkyl; n is 1 or 2.

[0042] In Chemical Formula 2, L 11 may be C1-C3 alkylene, and Y 11 may be N or O, and R 11 may be halogen, C1-C5 alkyl, or C1-C5 alkoxy; R 12 may be a branched C3-C5 alkyl, and R 13 ~R 17 may each independently be hydrogen or a straight chain C1-C3 alkyl; n may be 1 or 2.

[0043] Additionally, the molybdenum compound according to an exemplary embodiment of the present invention may be represented by the following Formula 3: [ka] During the ceremony Y 21 is N, O, or S; R 21 is halogen, C1-C7 alkyl, C1-C7 alkoxy, mono-C1-C7 alkylamino, or di-C1-C7 alkylamino; R 22 is C1-C7 alkyl; R 23 ~R 25 are each independently hydrogen or C1-C7 alkyl; n is 1 or 2.

[0044] Specifically, in Chemical Formula 3, Y 21 may be N or O, and R 21 may be halogen, C1-C5 alkyl, or C1-C5 alkoxy; R 22 may be a branched C3-C5 alkyl, and R 23 ~R 25 may each independently be hydrogen or a straight chain C1-C3 alkyl; n may be 1 or 2.

[0045] More specifically, in Formula 3 of the molybdenum compound according to an exemplary embodiment of the present invention, Y 21 may be N or O, and R 21 may be halogen or C1-C5 alkyl, R 22 may be a branched C3-C5 alkyl, and R 23 ~R 25 may each independently be hydrogen, methyl, or ethyl, and n may be 1 or 2.

[0046] The molybdenum compound according to exemplary embodiments of the present invention may be selected from the following compounds: [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka]

[0047] Specifically, the molybdenum compound according to exemplary embodiments of the present invention may be selected from the following compounds: [ka] [ka] [ka]

[0048] The present invention provides a method for producing a novel molybdenum compound, which specifically includes reacting a compound represented by the following Chemical Formula 11 with a compound represented by the following Chemical Formula 12 to produce a molybdenum compound represented by the following Chemical Formula 1: [ka] [ka] R1-MgX (Formula 12) During the ceremony L1 is C1-C5 alkylene; Y1 is N, O, or S; R1 is halogen, C1-C7 alkyl, C1-C7 alkoxy, mono-C1-C7 alkylamino, or di-C1-C7 alkylamino; R2 and R3 are each independently C1-C7 alkyl; R4 to R8 are each independently hydrogen or C1 to C7 alkyl; X and X1 are each independently a halogen; n is 1 or 2.

[0049] In the method for producing a molybdenum compound according to an exemplary embodiment of the present invention, the compound represented by Chemical Formula 12 can be used in a molar ratio of 1:1 to 1.2 based on the compound represented by Chemical Formula 11.

[0050] In the method for producing a molybdenum compound, the reaction temperature and reaction time are not particularly limited as long as they are temperatures and times used in organic synthesis, and although they vary depending on the amounts of reactants and starting materials, the reaction temperature may be −30 to 30° C., preferably −20 to 10° C., and more preferably −15 to 0° C. The reaction time may be 0.5 to 10 hours, specifically 1 to 9 hours, and more specifically 3 to 7 hours.

[0051] In addition, a method for producing a molybdenum compound according to an exemplary embodiment of the present invention may include reacting a compound represented by the following Chemical Formula 13 with a compound represented by the following Chemical Formula 14 to produce a compound represented by Chemical Formula 11: [ka] [ka] During the ceremony L1 is C1-C5 alkylene; Y1 is N, O, or S; R2 and R3 are each independently C1-C7 alkyl; R4 to R8 are each independently hydrogen or C1 to C7 alkyl; X, X1, and X2 are each independently a halogen; n is 1 or 2.

[0052] In the method for producing a molybdenum compound according to an exemplary embodiment of the present invention, the compound represented by Chemical Formula 14 can be used in a molar ratio of 1:1 to 1.2 based on the compound represented by Chemical Formula 13.

[0053] In the method for producing a molybdenum compound, the reaction temperature and reaction time are not particularly limited as long as they are temperatures and times used in organic synthesis, and although they vary depending on the amounts of reactants and starting materials, the reaction temperature may be −5 to 60° C., preferably 5 to 50° C., and more preferably 15 to 30° C. The reaction time may be 3 to 20 hours, specifically 5 to 18 hours, and more specifically 7 to 16 hours.

[0054] Furthermore, the method for producing a molybdenum compound according to the exemplary embodiment of the present invention can be carried out in a solvent, and the solvent may be any commonly used organic solvent, for example, one or more selected from alcohol solvents, alkane solvents, aromatic solvents, ether solvents, etc. Specifically, the solvent may be one or more selected from methanol, ethanol, 1-propanol, 2-propanol, hexane, ether, toluene, and tetrahydrofuran, but is not limited thereto.

[0055] The reaction is complete after confirming that the starting material has been completely consumed by NMR, etc. Then, the target substance may be separated and purified by a common method such as extraction, solvent distillation under reduced pressure, recrystallization, or column chromatography.

[0056] The manufacturing method can exhibit high yields and therefore can be useful for mass production processes in a very economical manner.

[0057] The present invention provides a molybdenum-containing composition for thin film deposition that includes a molybdenum compound according to an exemplary embodiment.

[0058] The molybdenum compounds according to exemplary embodiments of the present invention are included in the molybdenum-containing compositions for thin film deposition at concentrations within a range that can be recognized by those skilled in the art, taking into consideration the film formation conditions, the thickness and properties of the thin film, and the like.

[0059] The molybdenum-containing composition for thin film deposition may contain one or more solvents selected from hydrocarbon solvents such as pentane, hexane, heptane, octane, decane, dodecane, ethylcyclohexane, propylcyclohexane, benzene, toluene, ethylbenzene, xylene, diethylbenzene, and ethyltoluene; alcohol solvents such as methanol, ethanol, propanol, isopropanol, butanol, and isobutanol; ether solvents such as diethyl ether, dipropyl ether, dibutyl ether, butyl ethyl ether, and tetrahydrofuran; and ester solvents such as methyl butyrate, ethyl butyrate, and propyl propionate.

[0060] The molybdenum-containing composition for thin film deposition according to the present invention exhibits high volatility and reactivity due to the inclusion of the molybdenum compound of the present invention, and is therefore capable of providing a molybdenum-containing thin film of excellent quality.

[0061] The present invention also provides a method for producing a molybdenum-containing thin film, and the production method is not particularly limited as long as it is recognizable to those skilled in the art, and can be performed by, for example, chemical vapor deposition (CVD), atomic layer deposition (ALD), metalorganic chemical vapor deposition (MOCVD), low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), or plasma-enhanced atomic layer deposition (PEALD).

[0062] The molybdenum compounds according to exemplary embodiments of the present invention exhibit excellent vapor pressure, are not easily decomposed even at high temperatures, and can maintain a stable vapor state after vaporization, making them effective in the deposition methods described above.

[0063] Specifically, the manufacturing method includes: a) heating a substrate placed in a chamber; and b) injecting a reaction gas and a molybdenum-containing composition for thin film deposition according to an exemplary embodiment of the present invention into the chamber to manufacture a molybdenum-containing thin film, and the temperature of the substrate can be maintained at 300 to 700°C.

[0064] The molybdenum-containing thin film according to the present invention may be, but is not limited to, a molybdenum-containing metal film, a molybdenum-containing oxide film, or a molybdenum-containing nitride film.

[0065] To deposit a molybdenum-containing metal film according to the present invention, one or more reactant gases selected from the group consisting of hydrogen (H), neutral nitrogen (N), and ammonia (NH). To deposit a molybdenum-containing oxide thin film (MoO, MoO), one or more reactant gases selected from the group consisting of water vapor (H0), oxygen (O), oxygen plasma (O plasma), nitrogen oxides (NO, NO), nitrogen oxide plasma (NO plasma), oxygen nitride (NO), hydrogen peroxide solution (H0), and ozone (O). To deposit a molybdenum-containing nitride thin film (MoN), one or more reactant gases selected from the group consisting of ammonia (NH), ammonia plasma (NH plasma), hydrazine (NH), and nitrogen plasma (N plasma).

[0066] In yet another general aspect, there is provided a molybdenum-containing thin film produced using a molybdenum compound according to an exemplary embodiment of the present invention.

[0067] The molybdenum compound of the present invention has excellent volatility and reactivity, and when this compound is used to produce a molybdenum-containing thin film, the compound is relatively easily reduced to molybdenum metal, making it possible to produce a highly pure conductive molybdenum-containing thin film. [Example]

[0068] The molybdenum compound, its production method, and the molybdenum-containing thin film containing the compound according to the present invention will be described in more detail below with reference to specific examples.

[0069] However, the following examples are merely references for explaining the present invention in detail, and the present invention is not limited thereto, and may be embodied in various forms. Furthermore, the terms used in this specification are merely for the purpose of effectively describing specific examples, and are not intended to limit the present invention.

[0070] The following examples of producing molybdenum compounds according to the present invention were carried out in an inert argon or nitrogen atmosphere using a glove box or a Schlenk line.

[0071] [Example 1] Preparation of Compound 1 [ka] (t-ButylN=)2MoCl2(DME) (11.6 g) and tetrahydrofuran (THF) (100 mL) were added to a 250 mL Schlenk flask, and 1 equivalent of DMAP-MgCl (3-dimethylaminopropyl-magnesium chloride) in THF was added dropwise at room temperature. After stirring at room temperature for 12 hours, the solvent was removed under reduced pressure. n-Hexane (100 mL) was added, filtered, and the solvent was removed under reduced pressure. The product was distilled (114 °C, 0.5 Torr) to give compound 1 ((t-ButylN=)2MoCl(DMAP)) (3 g) as a yellow liquid (30% yield). 1 H NMR(C6D6,500MHz):δ2.50(t,2H,NCH2),δ2.37(s,6H,N(CH3)2),δ1.93(m,2H,CCH2C),δ1.86(m,2H,CCCH2),δ1.32(s,18H,NC(CH3)3)

[0072] [Example 2] Preparation of Compound 2 [ka] (t-Butyl N=)2MoCl2(DME) (30 g) and tetrahydrofuran (THF) (100 mL) were added to a 250 mL Schlenk flask, and 1 equivalent of DMAMP-MgCl (3-dimethylamino-2-methylpropyl-magnesium chloride) in THF was added dropwise at room temperature. After stirring at room temperature for 12 hours, the solvent was removed under reduced pressure. n-Hexane (100 mL) was added, filtered, and the solvent was removed under reduced pressure. The product was distilled (100 °C, 0.1 Torr) to give compound 2 ((t-Butyl N=)2MoCl(DMAMP)) (7 g) as a yellow liquid (25% yield). 1H NMR(C6D6,500MHz):δ2.58(s,3H,N(CH3)),δ2.55(m,1H,CCHC),δ2.19(s,3H,N(CH3)),δ2.10(m,2H,NCH2),δ2. 10(m,1H,CCCH2),δ1.51(m,1H,CCCH2),δ1.34(s,9H,NC(CH3)3),δ1.31(s,9H,NC(CH3)3),δ0.90(d,3H,CCCH3)

[0073] [Example 3] Preparation of Compound 3 [ka] Compound 2 ((t-butyl N=)2MoCl(DMAMP)) (7 g) and toluene (50 mL) were added to a 250 mL Schlenk flask, and 1 equivalent of Me-MgI in ether was added dropwise at -10 °C. After stirring at room temperature for 5 hours, the solvent was removed under reduced pressure. n-Hexane (50 mL) was added, filtered, and the solvent was removed under reduced pressure. The product was distilled (80 °C, 0.4 Torr) to give compound 3 ((t-butyl N=)2MoMe(DMAMP)) (2.2 g) as a yellow liquid (yield: 38%). 1 H NMR(C6D6,500MHz):δ2.59(t,1H,CCHC),δ2.37(s,3H,N(CH3)),δ2.03(m,2H,NCH2),δ1.95(m,1H,CCCH2),δ1.87(s,3H,N (CH3)),δ1.44(m,1H,CCCH2),δ1.39(s,9H,NC(CH3)3),δ1.37(s,9H,NC(CH3)3),δ1.01(d,3H,CCH3),δ0.53(s,3H,MoCH3)

[0074] [Example 4] Preparation of Compound 4 [ka] Compound 2 ((t-butyl N=)2MoCl(DMAMP)) (14 g) and ether (100 mL) were added to a 250 mL Schlenk flask, and 1 equivalent of (CH3)3CCH2-MgCl (neopentyl-magnesium chloride) in THF was added dropwise at -10 °C. After stirring at room temperature for 5 hours, the solvent was removed under reduced pressure. n-Hexane (100 mL) was added, filtered, and the solvent was removed under reduced pressure. The product was distilled (140 °C, 0.4 Torr) to give 3 g of compound 4 ((t-butyl N=)2Mo(neopentyl)(DMAMP)) as a yellow liquid (20% yield). 1 H NMR(C6D6,500MHz):δ3.36(s,6H,N(CH3)2),δ2.57(m,1H,NCCH),δ2.10(s,2H,MoCH2),δ1.96(m,1H,N CH2),δ1.68(m,1H,NCH2),δ1.37(s,18H,NC(CH3)3),δ1.26(s,9H,MoCC(CH3)3),δ1.18(d,3H,NCCCH3)

[0075] The thermal stability, volatility, and decomposition temperature of Examples 1 to 3 of the present invention were measured by thermogravimetric analysis (TGA). The products were heated to 500°C at a rate of 10°C / min while nitrogen gas was injected at 20 mL / min, and the weights of the products were measured.

[0076] FIG. 1 shows the TGA analysis results for Examples 1 to 3. In Example 1 (Compound 1), decomposition began at 190°C, and at 326°C, only 47% by weight of Example 1 (Compound 1) remained as residue, demonstrating that Example 1 (Compound 1) has excellent thermal stability.

[0077] Similarly, the decomposition of Example 2 (Compound 2) and Example 3 (Compound 3) began at 153°C and 180°C, respectively, and only 21 wt% of Example 2 (Compound 2) and 32 wt% of Example 3 (Compound 3) remained as residue at 317°C and 389°C, respectively, demonstrating the excellent thermal stability of Example 2 (Compound 2) and Example 3 (Compound 3).

[0078] FIG. 2 shows the results of vapor pressure analysis for Examples 1 to 3, and the vapor pressure graph shows that the molybdenum compounds of Examples 1 to 3 of the present invention have excellent vapor pressure.

[0079] The molybdenum compound of the present invention has a specific structure and specific functional groups, and therefore exhibits improved vapor pressure and thermal stability. When this compound is used to produce a molybdenum-containing thin film, the film has excellent uniformity and step coverage, and can exhibit improved electrical properties.

[0080] The present invention has been described above with reference to specific examples and comparative examples, but these examples are provided only to aid in the overall understanding of the present invention. Therefore, the present invention is not limited to the above examples. From this description, those skilled in the art to which the present invention pertains may make various modifications and changes.

[0081] Therefore, the spirit of the present invention should not be limited to the above-described exemplary embodiments, and all modifications that are the same as or equivalent to the following claims are intended to be included within the scope and spirit of the present invention.

Claims

1. A molybdenum compound represented by the following chemical formula 1: 【Chemical 1】 During the ceremony L １ is C1-C5 alkylene; Y １ is N, O, or S; R １ is halogen, C1-C7 alkyl, C1-C7 alkoxy, mono-C1-C7 alkylamino, or di-C1-C7 alkylamino; R ２ and R ３ are each independently C1-C7 alkyl; R ４ ~R ８ are each independently hydrogen or C1-C7 alkyl; n is 1 or 2.

2. In Chemical Formula 1, L １ is C1-C3 alkylene; Y １ is N, O, or S; R １ is halogen, C1-C5 alkyl, or C1-C5 alkoxy; R ２ and R ３ are each independently C1-C5 alkyl; R ４ ~R ８ are each independently hydrogen or C1-C5 alkyl; 2. The molybdenum compound according to claim 1, wherein n is 1 or 2.

3. In Chemical Formula 1, L １ is C1-C3 alkylene; Y １ is N or O; R １ is halogen, C1-C5 alkyl, or C1-C5 alkoxy; R ２ and R ３ are each independently a branched C3-C5 alkyl; R ４ ~R ８ are each independently hydrogen or a straight chain C1-C3 alkyl; 2. The molybdenum compound according to claim 1, wherein n is 1 or 2.

4. The molybdenum compound according to claim 1, wherein the molybdenum compound is represented by the following chemical formula 2: 【Chemistry 2】 During the ceremony L １１ is C1-C5 alkylene; Y １１ is N, O, or S; R １１ is halogen, C1-C7 alkyl, C1-C7 alkoxy, mono-C1-C7 alkylamino, or di-C1-C7 alkylamino; R １２ is C1-C7 alkyl; R １３ ~R １７ are each independently hydrogen or C1-C7 alkyl; n is 1 or 2.

5. In Chemical Formula 2, L １１ is C1-C3 alkylene; Y １１ is N or O; R １１ is halogen, C1-C5 alkyl, or C1-C5 alkoxy; R １２ is a branched C3-C5 alkyl; R １３ ~R １７ are each independently hydrogen or a straight chain C1-C3 alkyl; 5. The molybdenum compound according to claim 4, wherein n is 1 or 2.

6. 2. The molybdenum compound of claim 1, wherein the molybdenum compound is selected from the group consisting of the following compounds: 【Chemistry 3】 【Chemistry 4】 【Chemistry 5】 【Chemistry 6】 【Chemistry 7】 【Chemistry 8】 【Chemistry 9】 【Chemistry 10】

7. A method for producing a molybdenum compound, comprising reacting a compound represented by the following chemical formula 11 with a compound represented by the following chemical formula 12 to produce a molybdenum compound represented by the following chemical formula 1: 【Chemistry 11】 【Chemistry 12】 R １ -MgX (Chemical Formula 12) During the ceremony L １ is C1-C5 alkylene; Y １ is N, O, or S; R １ is halogen, C1-C7 alkyl, C1-C7 alkoxy, mono-C1-C7 alkylamino, or di-C1-C7 alkylamino; R ２ and R ３ are each independently C1-C7 alkyl; R ４ ~R ８ are each independently hydrogen or C1-C7 alkyl; X and X １ are each independently a halogen; n is 1 or 2.

8. The method for producing a molybdenum compound according to claim 7, wherein the molybdenum compound represented by Chemical Formula 11 is produced by reacting a compound represented by the following Chemical Formula 13 with a compound represented by the following Chemical Formula 14: 【Chemistry 13】 【Chemistry 14】 During the ceremony L １ is C1-C5 alkylene; Y １ is N, O, or S; R ２ and R ３ are each independently C1-C7 alkyl; R ４ ~R ８ are each independently hydrogen or C1-C7 alkyl; X, X １ , and X ２ are each independently a halogen; n is 1 or 2.

9. A molybdenum-containing composition for thin film deposition, comprising the molybdenum compound according to any one of claims 1 to 6.

10. 1. A method for producing a molybdenum-containing thin film, comprising: a) heating a substrate placed in a chamber; b) injecting a reaction gas and the molybdenum-containing composition for thin film deposition according to claim 9 into the chamber to produce a molybdenum-containing thin film; A method comprising:

11. The method for producing a molybdenum-containing thin film according to claim 10, wherein the substrate is maintained at a temperature of 300 to 700°C.

12. A molybdenum-containing thin film produced using the molybdenum compound according to any one of claims 1 to 6.

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