Method and material for polishing materials

Abstract

The present disclosure describes a slurry composition for reducing the surface roughness of polycrystalline materials, such as silicon carbide, alumina, diamond, and carbon. The present disclosure can also be applied to single-crystal materials (e.g., silicon carbide, sapphire, or diamond).

Description

[Technical Field]

[0001] The present disclosure relates to the field of polishing materials. [Background technology]

[0002] Chemical mechanical polishing is a method of smoothing a surface by a combination of chemical and mechanical forces. Summary of the Invention

[0003] The present disclosure describes a slurry composition for reducing the surface roughness of polycrystalline materials, such as silicon carbide, alumina, diamond, and carbon. The present disclosure can also be applied to single-crystal materials (e.g., silicon carbide, sapphire, or diamond).

[0004] Polycrystalline hard materials such as silicon carbide are used in optical applications (e.g., mirrors) and in the production of wafer-bonded single-crystal silicon carbide substrates. A key requirement for all of these applications is achieving a sub-nanometer finish. Depending on the crystal orientation, the hardness and chemical activity of each grain can vary. For materials containing grains of different crystal orientations (micron-scale), the surface finish may require improvement. Some grains polish faster than others, resulting in a poor finish. In some embodiments, the polishing method includes diamond lapping. However, diamond lapping can be too time-consuming for some applications and may not meet the surface finish requirements. Other chemical-mechanical polishing methods can result in insufficient surface quality. Therefore, there is a need to develop faster and smoother polishing methods for polycrystalline silicon carbide and similar hard materials.

[0005] The present disclosure relates to a chemical mechanical polishing (CMP) slurry composition for reducing surface roughness based on the use of a combination of an oxidizer (such as an isotropic oxidizer) and particles (e.g., plate-shaped abrasive particles) with a high aspect ratio in combination with diamond (e.g., nanodiamond). Examples of plate-shaped particles include kaolin, hydrated alumina, and the like. The plate-shaped particles have one dimension that is much thinner than the other two. The method of the present disclosure can produce a final roughness of polished silicon carbide in the range of 4 angstroms to 5 angstroms (measured by atomic force microscope), which is two times better than some methods.

[0006] In some embodiments, the technology described herein relates to a composition comprising a first particle having a first hardness and a plurality of second particles having a second hardness at least partially surrounding the first particle, wherein the second hardness of the plurality of second particles is greater than the first hardness of the first particle, and the aspect ratio of the first particle is in a range of 2:1 to 1,000,000:1.

[0007] In some embodiments, the technology described herein relates to a composition in which the length of a first dimension of a first particle is less than the length of a second dimension of the first particle and the length of a third dimension of the first particle.

[0008] In some embodiments, the technology described herein relates to a composition in which the first particle comprises kaolin, gibbsite, aluminum bromide, alumina, quartz, boron carbide, boron nitride, boron hydride, silicon carbide, titania, boehmite, mica, magnesium hydroxide, or a combination thereof.

[0009] In some embodiments, the technology described herein relates to compositions in which the second particles comprise diamond, silicon carbide, boron carbide, boron nitride, boron hydride, aluminum bromide, or any combination thereof.

[0010] In some embodiments, the technology described herein relates to compositions in which the diamond comprises an average grain size of less than 2 microns, less than 1 micron, or less than 500 nanometers.

[0011] In some embodiments, the technology described herein provides a method for producing a second particle having a flow rate of 2000 kg / mm 2 The present invention relates to a composition comprising a particle hardness greater than

[0012] In some aspects, the technology described herein relates to compositions, wherein the pH of the composition ranges from 1 to 13.

[0013] In some aspects, the technology described herein relates to compositions, wherein the pH of the composition is in the range of 1-3 or 11-13.

[0014] In some aspects, the technology described herein relates to compositions further comprising an oxidizing agent.

[0015] In some aspects, the technology described herein relates to compositions wherein the oxidizing agent is an isotropic oxidizing agent.

[0016] In some aspects, the technology described herein relates to a composition in which the first particles are rod-shaped or plate-shaped.

[0017] In some embodiments, the technology described herein relates to a composition in which the first particles are rod-shaped and the aspect ratio of the first particles is greater than 1 or greater than 2.5.

[0018] In some embodiments, the technology described herein relates to a composition in which the first particles are plate-shaped and the aspect ratio of the first particles is greater than 10 or greater than 50.

[0019] In some aspects, the technology described herein relates to compositions that are slurries.

[0020] In some embodiments, the technology described herein relates to a method of using a slurry, the method comprising: applying a slurry to a substrate, the slurry comprising a first particle having a first hardness and a plurality of second particles having a second hardness at least partially surrounding the first particle, the second hardness of the plurality of second particles being greater than the first hardness of the first particle, and an aspect ratio of the first particles being in a range of 2:1 to 1,000,000:1; and polishing the substrate with the slurry until the substrate has a roughness of less than 7 angstroms.

[0021] In some embodiments, the technology described herein relates to methods in which a length in a first dimension of a first particle is less than a length in a second dimension of the first particle and a length in a third dimension of the first particle.

[0022] In some embodiments, the technology described herein relates to methods, wherein the first particles comprise kaolin, gibbsite, aluminum bromide, alumina, quartz, boron carbide, boron nitride, boron hydride, silicon carbide, titania, boehmite, mica, magnesium hydroxide, or a combination thereof.

[0023] In some embodiments, the technology described herein relates to methods wherein the second particles comprise diamond, silicon carbide, boron carbide, boron nitride, boron hydride, aluminum bromide, or any combination thereof.

[0024] In some embodiments, the technology described herein relates to methods wherein the diamond comprises an average grain size of less than 2 microns, less than 1 micron, or less than 500 nanometers.

[0025] In some embodiments, the technology described herein provides a method for producing a second particle having a flow rate of 2000 kg / mm 2 and a particle hardness of greater than 0.01.

[0026] In some aspects, the technology described herein relates to methods wherein the pH of the slurry ranges from 1 to 13.

[0027] In some aspects, the technology described herein relates to methods further comprising an oxidizing agent.

[0028] In some aspects, the technology described herein relates to methods wherein the oxidizing agent is an isotropic oxidizing agent.

[0029] In some aspects, the technology described herein relates to methods wherein the first particles are rod-shaped or plate-shaped.

[0030] In some embodiments, the technology described herein relates to methods wherein the first particles are rod-shaped and the aspect ratio of the first particles is greater than 1 or greater than 2.5.

[0031] In some embodiments, the technology described herein relates to methods wherein the first particles are plate-shaped and the aspect ratio of the first particles is greater than 10 or greater than 50.

[0032] In some aspects, the technology described herein relates to a method, wherein the slurry is a first slurry, and the method further comprises applying a second slurry to the substrate before applying the first slurry.

[0033] In some embodiments, the technology described herein relates to a method, wherein polishing a substrate with a slurry comprises polishing until the substrate has a roughness of less than 5 angstroms.

[0034] Some embodiments of the present disclosure are herein described, by way of example only, with reference to the accompanying drawings. With particular reference now to the drawings in detail, it is emphasized that the illustrated embodiments are by way of example and are intended to be illustrative of embodiments of the present disclosure. In this regard, the description taken together with the drawings will make apparent to those skilled in the art how embodiments of the present disclosure may be practiced. [Brief explanation of the drawings]

[0035] [Figure 1]FIG. 1 illustrates a system having a slurry including a mixture of particles defined by a first particle and a plurality of second particles at least partially surrounding the first particle. [Figure 2] 1A-1C illustrate exemplary flow charts according to some embodiments of methods for polishing a material (e.g., a substrate such as a silicon carbide substrate). [Figure 3A] FIG. 1 shows the polished surface of a nanodiamond-based slurry with spherical soft-core particles. [Figure 3B] FIG. 1 shows the polished surface of nanodiamond-based slurry with rod-shaped soft-core particles. [Figure 3C] FIG. 1 shows the polished surface of a nanodiamond-based slurry with plate-shaped soft-core particles. DETAILED DESCRIPTION OF THE INVENTION

[0036] Among the benefits and improvements disclosed, other objects and advantages of the present disclosure will become apparent from the following description taken in conjunction with the accompanying drawings. While detailed embodiments of the present disclosure are disclosed herein, it should be understood that the embodiments of the present disclosure are merely exemplary of the present disclosure, which may be embodied in various forms. Moreover, each of the examples provided with respect to the various embodiments of the present disclosure is intended to be illustrative and not limiting.

[0037] All prior patents and publications referenced herein are incorporated by reference in their entirety.

[0038] Throughout this specification and the claims, the following terms have the meanings expressly associated therewith, unless the context clearly dictates otherwise. As used herein, the phrases "in one embodiment," "in an embodiment," and "in some embodiments" do not necessarily refer to the same embodiment, but may. Additionally, as used herein, the phrases "in another embodiment" and "in some other embodiments" do not necessarily refer to different embodiments, but may. It is intended that all embodiments of the present disclosure be combinable without departing from the scope or spirit of the disclosure.

[0039] As used herein, the term "based on" is not exclusive and may be based on additional unrecited factors unless the context clearly dictates otherwise. Furthermore, throughout this specification, the meanings of "a," "an," and "the" include plural referents. The meaning of "in" includes "in" and "on."

[0040] As used herein, the term "between" does not necessarily require being located immediately adjacent to another element. Generally, the term refers to a configuration in which an object is sandwiched between two or more other objects. At the same time, the term "between" can refer to an object that is located immediately adjacent to two opposing objects. Thus, in any one or more of the embodiments disclosed herein, a particular structural component that is located between two other structural elements may be: A particular structural component may be placed directly between two other structural elements such that it is in direct contact with both of the two other structural elements; A particular structural component can be placed directly next to only one of two other structural elements, such that it is in direct contact with only one of the two other structural elements; A particular structural element may be indirectly adjacent to only one of two other structural elements, such that the particular structural element is not in direct contact with only one of the two other structural elements, but there is another element that juxtaposes the particular structural element and one of the two other structural elements; or A particular structural component may be indirectly disposed between two other structural elements, such that the structural component is not in direct contact with both of the two other structural elements, but other features may be disposed between the structural elements; or Any combination thereof is possible.

[0041] As used herein, "embedded" means that a first material is distributed throughout a second material.

[0042] As used herein, "slurry" means a semi-liquid mixture, such as fine particles suspended in water.

[0043] 1 illustrates a system 100 having a slurry 110 including a mixture of particles defined by a first particle 112 and a plurality of second particles 114 at least partially surrounding the first particle 112. In some embodiments, the slurry is applied to a substrate 120. In some embodiments, the substrate 120 includes various grains, including first grains 120A and second grains 120B. The method of the present disclosure includes polishing the substrate 120 with the slurry 110 until the roughness of the substrate 120 meets a predetermined roughness threshold. For example, the predetermined threshold can be a surface with a surface finish of less than 7 Angstroms in an atomic force microscope (AFM) 5×5 μm scan as well as optical profilometry.

[0044] In some embodiments, the substrate 120 can have grain isotropy. For example, the substrate 120 can have anisotropic hardness in different directions as well as anisotropic chemical reactivity. For example, a first grain 120A can polish at a different rate than a second grain 120B. In some embodiments, the substrate 120 has a poor surface finish (roughness) due to anisotropic polishing. The present disclosure aims to achieve a surface finish of less than 5 Angstroms in an atomic force microscope (AFM) 5×5 μm scan as well as optical profilometry.

[0045] In some examples, a slurry of particles (e.g., diamond particles, including nanodiamond particles) is coated onto larger, spherical, soft particles. This slurry provides high removal rates and surface finishes up to 10 angstroms during polishing. In contrast, the present disclosure uses first particles 112 with high aspect ratios, such as particles with plate-like or rod-like structures, as soft core particles for diamond coating. The structures of the present disclosure polish anisotropic grains more uniformly (i.e., referring to structures with large, spherical particles) and can provide surface finishes up to 3 angstroms to 5 angstroms.

[0046] In some embodiments, the slurry 110 includes a liquid in which the first particles 112 and the second particles 114 are dispersed. The liquid can be a water-based solvent that includes an organic solvent, such as alcohol or glycerin.

[0047] In some embodiments, the first particles 112 are kaolin, gibbsite, aluminum bromide (AlBr), alumina (aluminum oxide (AlO)), including alpha alumina, quartz, boron carbide (BC), boron nitride (BN), boron hydride (BH), silica (SiO), silicon carbide (SiC), titania, boehmite, mica, magnesium hydroxide (Mg(OH)), zirconia, ceria, or a combination thereof.

[0048] In some embodiments, kaolin is Al2Si2O5(OH)4. In some embodiments, gibbsite can be referred to as Al(OH)3, γ-Al(OH)3, and / or α-Al(OH). In some embodiments, quartz is silica (SiO2). In some embodiments, titania is also referred to as titania (TiO2). In some embodiments, boehmite is referred to as bohmite (γ-AlO(OH)). In some embodiments, mica has X2Y 4-6 Z8O 20 The general formula can be given as (OH,F)4, where X is K, Na, or Ca, or less commonly Ba, Rb, or Cs; Y is Al, Mg, or Fe, or less commonly Mn, Cr, Ti, Li, etc.; Z is primarily Si or Al, but also Fe. 3+ Alternatively, it may contain Ti.

[0049] In some embodiments, the second particles 114 comprise diamond (e.g., nanodiamond), silicon carbide, boron carbide, boron nitride, boron hydride, aluminum bromide, or any combination thereof. In some embodiments, the diamond has an average particle size of less than 5 microns, less than 4 microns, less than 3 microns, less than 2 microns, less than 1 micron, less than 500 nanometers, 5 microns to 10 nanometers, 4 microns to 10 nanometers, 3 microns to 10 nanometers, 2 microns to 10 nanometers, 1 micron to 10 nanometers, 500 nanometers to 10 nanometers, 5 microns to 500 nanometers, 5 microns to 1 micron, 5 microns to 2 microns, 5 microns to 3 microns, or 5 microns to 4 microns. In some embodiments, the average particle size is measured by dynamic light scattering and sieving.

[0050] The first particles 112 have a first hardness. The second particles 114 have a second hardness. The particle hardness is determined by a Vickers hardness test. The second hardness of the second particles 114 is higher than the first hardness of the first particles 112. In some embodiments, the second particles 114 have a hardness of 1500 kg / mm 2Super, 2000kg / mm 2 It has a particle hardness of ultra.

[0051] The combination of the first particles 112 and the second particles 114 can be selected based on the hardness ratio between the first particles 112 and the second particles 114. The selection of the first particles 112 can depend on the identity of the second particles 114. Similarly, the selection of the second particles 114 can depend on the identity of the first particles 112. For example, if the first particles 112 are silica, the second particles 114 can be alumina. For example, if the second particles 114 are diamond particles, the first particles 112 can be alumina, silicon carbide, and / or silica particles. For example, the first particles 112 can be alumina or silica, and the second particles 114 can be boron nitride. For example, the first particles 112 can be zirconia, and the second particles 114 can be diamond. For example, the first particles 112 can be silica, and the second particles 114 can be silicon carbide. The second particles 114 on the first particles 112 can adhere by physically bonding together due to electrostatic charge differences.

[0052] The selection of the first particles 112 and the second particles 114 also depends on the substrate 120 to be polished. For example, the substrate 120 can be silicon carbide, sapphire, diamond, aluminum oxynitride, diamond, (AlON), quartz, gallium nitride, zirconia, and other oxides. The material of the substrate 120 can be single crystalline or polycrystalline. The material of the substrate 120 can have more than one phase.

[0053] In a chemical aspect of chemical mechanical polishing, the slurry 110 can further include an oxidizer on the first particles 112 and the second particles 114. In some embodiments, the oxidizer is an isotropic oxidizer. Examples of isotropic oxidizers include per-compounds such as permanganates, peroxides, perchlorates, perborates, periodates, and the like. Examples of isotropic oxidizers also include peroxo-compounds such as peroxochromates, peroxomonosulfates, peroxodisulfates, and the like.

[0054] In some embodiments, the slurry 110 can include additives such as ions, alkali metals, pH modifiers, pH buffers, corrosion inhibitors, dispersants, anti-settling agents, or other additives. In some embodiments, the pH of the slurry is predetermined. The pH of the slurry can be in the range of 1 to 13. In some embodiments, the pH of the composition is in the range of 1 to 3 or 11 to 13. For example, the pH of the slurry 110 can be determined based on the material of the substrate 120. For example, if the substrate 120 is sapphire alumina, the pH of the slurry 110 can be greater than 12. In some examples, if the substrate 120 is silicon carbide, the pH of the slurry 110 can be less than 3 or greater than 12.

[0055] In some embodiments, the aspect ratio of the first particles 112 is 2:1 to 1,000,000:1, 50,000:1 to 1,000,000:1, 100,000 to 1,000,000:1, 150,000 to 1,000,000:1, 200,000 to 1,000,000:1, 250,000 to 1,000,000:1, 300,000 to 1,000,000:1, 350,000 to 1,000,000:1, 0,000:1, 400,000~1,000,000:1, 450,000~1,000,000:1, 500,000~1,000,000:1, 550,000~1,000,000:1, 600,000~1,000,000:1, 650,000~1,000,000:1, 700,000~1,000,000:1, 750,000~1,000,000:1, 800,000~ 1,000,000:1, 850,000~1,000,000:1, 900,000~1,000,000:1, 950,000~1,000,000:1, 2:1~950,000:1, 2:1~900,000:1, 2:1~850,000:1, 2:1~800,000:1, 2:1~750,000:1, 2:1~700,000:1, 2:1~650,000:1, 2:1~60 The ratio may be in the range of 0,000:1, 2:1 to 550,000:1, 2:1 to 500,000:1, 2:1 to 450,000:1, 2:1 to 400,000:1, 2:1 to 350,000:1, 2:1 to 300,000:1, 2:1 to 250,000:1, 2:1 to 200,000:1, 2:1 to 150,000:1, 2:1 to 100,000:1, or 2:1 to 50,000:1.

[0056] In some embodiments, the length of a first dimension of the first particle 112 is less than the length of a second dimension of the first particle 112 and the length of a third dimension of the first particle 112. In some embodiments, the first particle 112 can be rod-shaped. A rod may be defined as a two-dimensional particle having an aspect ratio greater than 0.5, greater than 1, greater than 1.5, greater than 2, greater than 2.5, greater than 3, or greater than 3.5. In some embodiments, the first particle 112 can be plate-shaped. A plate may be defined as a two-dimensional particle having an aspect ratio greater than 10, greater than 20, greater than 30, greater than 40, greater than 50, or greater than 60.

[0057] In some embodiments, the first particles 112 and the second particles 114 can be similarly selected based on their crystal structure. In some embodiments, the crystal structure of the first particles 112 and the second particles 114 can be monoclinic, triclinic, and / or hexagonal.

[0058] 2 shows an exemplary flowchart according to some embodiments of a method for polishing a material (e.g., a substrate such as a silicon carbide substrate). The slurry can be any of the embodiments described herein. Method 200 includes applying 210 the slurry to the substrate. Method 200 includes polishing 220 the substrate with the slurry until the substrate has a roughness of less than 7 angstroms. [Example]

[0059] Example 1 Figure 3A shows the polished surface of a nanodiamond-based slurry with spherical soft-core particles. The removal rate was approximately 12 μm / hr. The resulting surface finish was approximately 10 Å.

[0060] Example 2 Figure 3B shows the polished surface of a nanodiamond-based slurry with rod-shaped soft-core particles. The removal rate was about 4 μm / hr. The resulting surface finish was about 3 Å.

[0061] Example 3 Figure 3C shows the polished surface of a nanodiamond-based slurry with plate-shaped soft-core particles. The removal rate was about 5 μm / hr. The resulting surface finish was about 4 Å.

[0062] Aspects Various aspects are described below, and it should be understood that any one or more of the features listed in the following aspects can be combined with any one or more of the other aspects.

[0063] Aspect 1. A composition comprising a first particle having a first hardness and a plurality of second particles having a second hardness at least partially surrounding the first particle, wherein the second hardness of the plurality of second particles is greater than the first hardness of the first particle, and the aspect ratio of the first particle is in the range of 2:1 to 1,000,000:1.

[0064] Embodiment 2. The composition of embodiment 1, wherein a length in a first dimension of the first particle is less than a length in a second dimension of the first particle and a length in a third dimension of the first particle.

[0065] Embodiment 3. The composition of embodiment 1 or embodiment 2, wherein the first particle comprises kaolin, gibbsite, aluminum bromide, alumina, quartz, boron carbide, boron nitride, boron hydride, silicon carbide, titania, boehmite, mica, magnesium hydroxide, or a combination thereof.

[0066] Embodiment 4. The composition of any one of embodiments 1 to 3, wherein the second particles comprise diamond, silicon carbide, boron carbide, boron nitride, boron hydride, aluminum bromide, or any combination thereof.

[0067] Embodiment 5. The composition of embodiment 4, wherein the diamond comprises an average grain size of less than 2 microns, less than 1 micron, or less than 500 nanometers.

[0068] Aspect 6. The second particles have a resistance of 2000 kg / mm 2 5. The composition of embodiment 4, comprising a particle hardness greater than

[0069] Embodiment 7. The composition of any one of embodiments 1 to 6, wherein the pH of the composition is in the range of 1 to 13.

[0070] Embodiment 8. The composition of any one of embodiments 1 to 7, wherein the pH of the composition is in the range of 1 to 3 or 11 to 13.

[0071] Embodiment 9. The composition of any one of embodiments 1 to 8, further comprising an oxidizing agent.

[0072] Embodiment 10. The composition of embodiment 9, wherein the oxidizing agent is an isotropic oxidizing agent.

[0073] Embodiment 11. The composition of any one of embodiments 1 to 10, wherein the first particles are rod-shaped or plate-shaped.

[0074] Embodiment 12. The composition of embodiment 11, wherein the first particles are rod-shaped, and the aspect ratio of the first particles is greater than 1 or greater than 2.5.

[0075] Embodiment 13 The composition of embodiment 11, wherein the first particles are plate-shaped, and the aspect ratio of the first particles is greater than 10 or greater than 50.

[0076] Embodiment 14. The composition of any one of embodiments 1 to 13, which is a slurry.

[0077] Embodiment 15. A method of using a slurry, comprising: applying a slurry to a substrate, the slurry comprising: a first particle having a first hardness and a plurality of second particles having a second hardness at least partially surrounding the first particle, the second hardness of the plurality of second particles being greater than the first hardness of the first particle, and an aspect ratio of the first particles being in a range of 2:1 to 1,000,000:1; and polishing the substrate with the slurry until the substrate has a roughness of less than 7 angstroms.

[0078] Embodiment 16. The method of embodiment 15, wherein the length of a first dimension of the first particle is less than the length of a second dimension of the first particle and the length of a third dimension of the first particle.

[0079] Embodiment 17. The method of embodiment 15 or embodiment 16, wherein the first particles comprise kaolin, gibbsite, aluminum bromide, alumina, quartz, boron carbide, boron nitride, boron hydride, silicon carbide, titania, boehmite, mica, magnesium hydroxide, or a combination thereof.

[0080] Embodiment 18. The method of any one of embodiments 15 to 17, wherein the second particles comprise diamond, silicon carbide, boron carbide, boron nitride, boron hydride, aluminum bromide, or any combination thereof.

[0081] Embodiment 19. The method of embodiment 18, wherein the diamond comprises an average grain size of less than 2 microns, less than 1 micron, or less than 500 nanometers.

[0082] Aspect 20. The second particles have a resistance of 2000 kg / mm 2 20. The method of embodiment 18, comprising a particle hardness of greater than

[0083] Embodiment 21. The method of any one of embodiments 15 to 20, wherein the pH of the slurry is in the range of 1 to 13.

[0084] Embodiment 22 The method of any one of embodiments 15 to 21, further comprising an oxidizing agent.

[0085] Embodiment 23 The method of embodiment 22, wherein the oxidizing agent is an isotropic oxidizing agent.

[0086] Embodiment 24 The method of any one of embodiments 15 to 23, wherein the first particles are rod-shaped or plate-shaped.

[0087] Embodiment 25 The method of embodiment 24, wherein the first particles are rod-shaped and the aspect ratio of the first particles is greater than 1 or greater than 2.5.

[0088] Embodiment 26 The method of embodiment 24, wherein the first particles are plate-shaped and the aspect ratio of the first particles is greater than 10 or greater than 50.

[0089] Embodiment 27. The method of any one of embodiments 15 to 26, wherein the slurry is a first slurry, and the method further comprises applying a second slurry to the substrate before applying the first slurry.

[0090] Embodiment 28. The method of any one of embodiments 15 to 27, wherein polishing the substrate with a slurry comprises polishing until the substrate has a roughness of less than 5 angstroms.

[0091] It is to be understood that changes in detail may be made, particularly to the materials of construction utilized, and to the shape, size, and arrangement of parts, without departing from the scope of the present disclosure. The specification and described embodiments are exemplary, the true scope and spirit of the present disclosure being indicated by the following claims.

Claims

1. first particles having a first hardness; a plurality of second particles having a second hardness and at least partially surrounding the first particles; A composition comprising: the second hardness of the plurality of second particles is greater than the first hardness of the first particles; and The composition, wherein the aspect ratio of the first particles is in the range of 2:1 to 1,000,000:

1.

2. The composition of claim 1 , wherein a length in a first dimension of the first particle is less than a length in a second dimension of the first particle and a length in a third dimension of the first particle.

3. 10. The composition of claim 1, wherein the first particles comprise kaolin, gibbsite, aluminum bromide, alumina, quartz, boron carbide, boron nitride, boron hydride, silicon carbide, titania, boehmite, mica, magnesium hydroxide, or a combination thereof.

4. 10. The composition of claim 1, wherein the second particles comprise diamond, silicon carbide, boron carbide, boron nitride, boron hydride, aluminum bromide, or any combination thereof.

5. 5. The composition of claim 4, wherein the diamond comprises an average grain size of less than 2 microns, less than 1 micron, or less than 500 nanometers.

6. The second particle has a strength of 2000 kg / mm ２ 5. The composition of claim 4, comprising a particle hardness greater than

7. The composition of claim 1, wherein the pH of the composition is in the range of 1 to 13.

8. The composition of claim 1, wherein the pH of the composition is in the range of 1 to 3 or 11 to 13.

9. The composition of claim 1 further comprising an oxidizing agent.

10. The composition of claim 9 wherein the oxidizing agent is an isotropic oxidizing agent.

11. The composition of claim 1 , wherein the first particles are rod-shaped or plate-shaped.

12. the first particles are rod-shaped; The aspect ratio of the first particles is greater than 1 or greater than 2.5; The composition of claim 11.

13. the first particles are plate-shaped, The aspect ratio of the first particles is greater than 10 or greater than 50; The composition of claim 11.

14. The composition of claim 1 which is a slurry.

15. applying a slurry to a substrate, the slurry comprising: first particles having a first hardness; and a plurality of second particles having a second hardness and at least partially surrounding the first particles; the second hardness of the plurality of second particles is greater than the first hardness of the first particles; and applying a slurry to a substrate, wherein the first particles have an aspect ratio in the range of 2:1 to 1,000,000:1; polishing the substrate with the slurry until the substrate has a roughness of less than 7 angstroms; A method of using the slurry, comprising:

16. 16. The method of claim 15, wherein a length in a first dimension of the first particle is less than a length in a second dimension of the first particle and a length in a third dimension of the first particle.

17. 16. The method of claim 15, wherein the first particles comprise kaolin, gibbsite, aluminum bromide, alumina, quartz, boron carbide, boron nitride, boron hydride, silicon carbide, titania, boehmite, mica, magnesium hydroxide, or a combination thereof.

18. 16. The method of claim 15, wherein the second particles comprise diamond, silicon carbide, boron carbide, boron nitride, boron hydride, aluminum bromide, or any combination thereof.

19. 20. The method of claim 18, wherein the diamond comprises an average grain size of less than 2 microns, less than 1 micron, or less than 500 nanometers.

20. The second particle has a strength of 2000 kg / mm ２ 20. The method of claim 18, comprising a particle hardness of greater than

21. The method of claim 15, wherein the pH of the slurry ranges from 1 to 13.

22. The method of claim 15 further comprising an oxidizing agent.

23. 23. The method of claim 22, wherein the oxidizing agent is an isotropic oxidizing agent.

24. The method of claim 15 , wherein the first particles are rod-shaped or plate-shaped.

25. the first particles are rod-shaped; The aspect ratio of the first particles is greater than 1 or greater than 2.5; 25. The method of claim 24.

26. the first particles are plate-shaped, The aspect ratio of the first particles is greater than 10 or greater than 50; 25. The method of claim 24.

27. 16. The method of claim 15, wherein the slurry is a first slurry, and the method further comprises applying a second slurry to the substrate before applying the first slurry.

28. 16. The method of claim 15, wherein polishing the substrate with a slurry comprises polishing until the substrate has a roughness of less than 5 angstroms.

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