Superconducting wire manufacturing equipment

Abstract

A superconducting wire manufacturing device capable of reinforcing the adhesive strength between a substrate and a buffer layer is provided. [Solution] The present invention relates to a superconducting wire manufacturing apparatus, and relates to a superconducting wire manufacturing apparatus that can perform a predetermined pretreatment process before a buffer layer is vapor-deposited on a substrate to reinforce the adhesion between the substrate and the buffer layer.

Description

[Technical Field]

[0001] The present disclosure relates to a superconducting wire manufacturing apparatus, and to a superconducting wire manufacturing apparatus that can perform a predetermined pretreatment process before a buffer layer is vapor-deposited on a substrate, thereby reinforcing the adhesion between the substrate and the buffer layer. [Background technology]

[0002] Superconductors lose electrical resistance at a critical temperature and can carry large amounts of current. Recently, there has been active research into second-generation high-temperature superconductors (coated conductors), which form superconducting films on thin buffer layers or metal substrates with biaxially oriented textures.

[0003] Second-generation high-temperature superconductors can be applied to a variety of fields. For example, wires made of second-generation high-temperature superconductors have a current-carrying capacity per unit area significantly superior to that of ordinary metal wires. Wires made of second-generation high-temperature superconductors can reduce power losses in electric power equipment, and can be used in fields such as MRI, superconducting magnetic levitation trains, and superconducting propulsion ships.

[0004] FIG. 1 is a diagram of an example of a superconducting wire. As shown in the figure, the superconducting wire has a metal substrate, a buffer layer formed on the substrate, a superconducting layer formed on the buffer layer, and a protective layer formed on the superconducting layer.

[0005] However, when a multilayer film is deposited in this manner, the superconducting wire is repeatedly exposed to temperatures of 500 to 1000°C, and the accumulated stress during this process can cause peeling between the metal substrate and the buffer layer. Summary of the Invention [Problem to be solved by the invention]

[0006] The present disclosure has been devised to solve the above-mentioned problems, and aims to provide a superconducting wire manufacturing apparatus that can perform a predetermined pretreatment process before a buffer layer is vapor-deposited on a substrate to reinforce the adhesion between the substrate and the buffer layer. [Means for solving the problem]

[0007] A superconducting wire manufacturing apparatus according to an example of the present disclosure is an apparatus for manufacturing superconducting wire, and includes an unwinder that unwinds a substrate, a number of deposition modules that sequentially deposit a buffer layer and a superconducting layer on the substrate unwound and transported from the unwinder, and a winder that passes through the deposition modules and winds up the substrate on which the buffer layer and the superconducting layer have been deposited, and further includes a pretreatment module that is arranged before the number of deposition modules and performs a predetermined pretreatment process on the substrate before the buffer layer is deposited on the substrate, and the pretreatment module can be configured to perform a pretreatment process to reinforce the adhesion between the substrate and the buffer layer.

[0008] The pre-treatment module can form an adhesion layer on the substrate.

[0009] The pre-treatment module includes a deposition device for depositing an adhesive layer on the substrate, and the deposition device may be a sputtering deposition device or an electron beam deposition device.

[0010] The pre-treatment module may be configured to subject the substrate to a plasma surface treatment.

[0011] The pretreatment module includes a plasma generator that generates plasma, and is configured to perform plasma surface treatment on the substrate using the plasma generated by the plasma generator. The reactive gas used in the plasma generator can include at least one of Ar and O2.

[0012] Among the plurality of buffer layer deposition modules, a deposition module for depositing a top buffer layer disposed at the top of the buffer layers is referred to as a top buffer layer deposition module. The top buffer layer deposition module may be configured to perform plasma surface treatment on the top buffer layer while depositing the top buffer layer.

[0013] The deposition module for the uppermost buffer layer may include a plasma generator for generating O2 plasma, and may be configured to perform plasma surface treatment on the uppermost buffer layer using the O2 plasma generated by the plasma generator.

[0014] The pre-treatment module may include a multi-turn transfer device that moves the substrate in multiple turns, and the plasma generator may be disposed on at least one of both sides and an upper portion of the multi-turn transfer device.

[0015] The top buffer layer may be a lanthanum manganite layer.

[0016] Each of the deposition modules may include a multi-turn transfer device that moves the substrate in multiple turns, and the multi-turn transfer devices of the deposition modules may have the same size and structure.

[0017] The deposition modules may be arranged in a row in the left-right direction, and one of the multi-turn transfer devices of each of two adjacent deposition modules may be arranged to protrude forward compared to the other multi-turn transfer device, so that the substrate may be transferred in a straight line between the two adjacent deposition modules.

[0018] Guide rollers for transporting the substrate may be disposed on both sides of each of the deposition modules in the left and right direction, and the substrate may be transferred between two adjacent deposition modules by the guide rollers.

[0019] Each of the deposition modules includes a deposition device for depositing a buffer layer or a superconducting layer on the substrate, and a fixing plate on which the deposition device is placed and fixed, and the fixing plate may be configured to be movable in the vertical direction.

[0020] A superconducting wire according to one example of the present disclosure is a superconducting wire manufactured by the above-mentioned superconducting wire manufacturing apparatus, and can include a substrate, an adhesive layer formed on the substrate, a buffer layer formed on the adhesive layer, and a superconducting layer formed on the buffer layer.

[0021] The adhesive layer may be a Ni layer, a Cr layer, a Ti layer, or a NiCr layer, and the thickness of the adhesive layer may be 5 to 50 nm. [Effects of the Invention]

[0022] In one aspect of the present disclosure, before a buffer layer is deposited on a substrate, a predetermined pretreatment step can be performed to enhance the adhesion between the substrate and the buffer layer.

[0023] In another aspect of the present disclosure, the apparatus can be constructed by arranging multiple deposition modules of the same structure in parallel, thereby reducing manufacturing costs and simplifying equipment design.

[0024] In another aspect of the present disclosure, by subjecting the uppermost buffer layer below it to plasma surface treatment before depositing the superconducting layer, the crystallinity of the wire can be improved, the surface roughness can be reduced, and the properties of the superconducting wire can be improved. [Brief explanation of the drawings]

[0025] [Figure 1] FIG. 1 is a diagram showing a general example of a superconducting wire. [Figure 2] 1 is a perspective view of a superconducting wire manufacturing apparatus according to an embodiment of the present disclosure. [Figure 3] FIG. 3 is a front view of FIG. 2. [Figure 4]FIG. 3 is a plan view of FIG. 2 as seen from above. [Figure 5] FIG. 3 is a side view of FIG. 2. [Figure 6] FIG. 3 is a cross-sectional view in the height direction of FIG. 2. [Figure 7] 1 is a schematic diagram of a superconducting wire manufacturing apparatus according to an embodiment of the present disclosure. [Figure 8] FIG. 1 is a diagram showing a superconducting wire manufactured by a manufacturing apparatus according to an embodiment of the present disclosure. [Figure 9] 1 illustrates a multi-turn transfer device according to one embodiment of the present disclosure. [Figure 10] FIG. 1 is a schematic front view of two adjacent deposition modules according to one embodiment of the present disclosure. [Figure 11] FIG. 2 is a schematic diagram of two adjacent deposition modules viewed from above, according to one embodiment of the present disclosure. [Figure 12] FIG. 1 is a diagram showing an example of the crystal structure of lanthanum manganite. [Figure 13] FIG. 2 is a schematic diagram illustrating a deposition module for a top buffer layer according to one embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0026] The present disclosure will now be described with reference to the accompanying drawings.

[0027] The terms used in this disclosure are currently selected as widely used and general terms as possible while taking into consideration the function of the present disclosure, but these may change depending on the intentions or precedents of engineers in the relevant field, the emergence of new technology, etc. Unless otherwise defined, the technical and scientific terms used may have the meanings that are commonly understood by those with ordinary knowledge in the technical field to which the present disclosure belongs.

[0028] In this disclosure and claims, terms such as "comprise" or "have" mean the presence of a feature or component described in the specification, and do not exclude the possibility that one or more other features or components may also be added, unless specifically limited.

[0029] As used in this disclosure and in the claims, the singular includes the plural unless the context clearly dictates otherwise, and the plural includes the singular unless the context clearly dictates otherwise.

[0030] Hereinafter, the reference numerals in the drawings may correspond to 10: superconducting wire manufacturing apparatus, 11: unwinder, 12: winder, PM: pretreatment module, PM_d: vapor deposition device, PM_p: plasma generator, DM: vapor deposition module, DM_b: buffer layer vapor deposition module, DM_s: superconducting layer vapor deposition module, 100: multi-turn transfer device, 200: vapor deposition device, 300: fixing plate, 400: plasma generator, 20: superconducting wire, and 21: substrate. Fig. 2 is a perspective view of a superconducting wire manufacturing apparatus according to an embodiment of the present disclosure, Fig. 3 is a front view of Fig. 2, Fig. 4 is a plan view of Fig. 2 from above, Fig. 5 is a side view of Fig. 2, and Fig. 6 is a cross-sectional view in the height direction of Fig. 2. In the drawings, F, B, L, R, U, and D represent front, back, left, right, top, and bottom, respectively.

[0031] According to an embodiment of the present disclosure, an apparatus for manufacturing a superconducting wire includes an unwinder for unwinding a substrate, a plurality of deposition modules for sequentially depositing a buffer layer and a superconducting layer on the substrate unwound from the unwinder, and a winder for winding up the substrate on which the buffer layer and the superconducting layer have been deposited, the apparatus further including a pretreatment module disposed before the plurality of deposition modules for performing a predetermined pretreatment process on the substrate before the buffer layer is deposited on the substrate. The pretreatment module is configured to perform a pretreatment process to reinforce adhesion between the substrate and the buffer.

[0032] Referring to Figure 2, the superconducting wire manufacturing apparatus 10 is an apparatus for manufacturing superconducting wire, and mainly includes an unwinder 11 that unwinds a substrate, a number of deposition modules DM, and a winder 12 that winds up the substrate on which the buffer layer and superconducting layer have been formed, i.e., winds up the superconducting wire.

[0033] The unwinder 11 may be a roller that unwinds a substrate provided in the form of a roll, and the winder 12 may be a roller that passes through a number of deposition modules DM and winds up the substrate, i.e., the superconducting wire, after deposition is completed, in the form of a roll.

[0034] The multiple deposition modules DM sequentially deposit a buffer layer and a superconducting layer on the substrate being unwound and transferred from the unwinder 11. The multiple deposition modules DM are arranged in series, sequentially depositing different types of buffer layers on the substrates, and can deposit a superconducting layer on the uppermost buffer layer of the substrate on which the buffer layer has already been deposited.

[0035] The number and arrangement order of the deposition modules DM can be adjusted according to the types and order of the buffer layers and superconducting layers. For example, assuming that buffer layers and superconducting layers are deposited on the structure shown in Figure 1, a first buffer layer (an Al2O3 diffusion barrier layer), a second buffer layer (a Y2O3 seed layer), a third buffer layer (an MgO IBAD layer), a fourth buffer layer (an MgO homo-epi layer), and a fifth buffer layer (a LaMnO3 strain matching layer) are sequentially stacked on the substrate, and a ReBaCuO superconducting layer is formed on the fifth buffer layer (a strain matching layer). For this purpose, the apparatus 10 according to the present disclosure can be configured to include five buffer layer deposition modules DM_1, DM_2, ..., and DM_5 and one superconducting layer deposition module DM_n.

[0036] Figure 7 is a schematic diagram of a superconducting wire manufacturing apparatus according to one embodiment of the present disclosure, and with reference to this, additional explanation will be given: among the numerous deposition modules DM, five buffer layer deposition modules DM_1, DM_2, ... and DM_5 can be represented as DM_b, and one superconducting layer deposition module can be represented as DM_n and DM_s.

[0037] Meanwhile, although not shown separately, the multiple deposition modules DM may further include a protective layer deposition module for forming a protective layer on one side and the other side of the superconducting wire, i.e., on the surface of the substrate and the superconducting layer.

[0038] The apparatus according to the present disclosure further includes a pre-treatment module PM disposed before the deposition modules DM. As shown in Figures 2 and 7, the pre-treatment module PM is disposed before the deposition modules DM and performs a predetermined pre-treatment process on the substrate before a buffer layer, specifically, a first buffer layer, is deposited on the substrate.

[0039] The pretreatment process is a process for reinforcing the adhesion between the substrate and the buffer layer, particularly the adhesion between the first buffer layer. The apparatus according to the present disclosure is configured to perform the pretreatment process by including a pretreatment module PM, thereby reinforcing the adhesion between the metal substrate and the buffer layer and eliminating the peeling phenomenon between the substrate and the buffer layer caused by heating as described above.

[0040] More specifically, the pre-treatment module can form an adhesion layer on the substrate, i.e., between the substrate and the first buffer layer, or can perform a plasma surface treatment on the substrate.

[0041] First, an embodiment will be described in which the pre-treatment module forms an adhesive layer between the substrate and the first buffer layer.

[0042] 7, the pre-treatment module PM may include a deposition device PM_d, which may deposit an adhesive layer on a substrate. The deposition device PM_d may be a sputtering deposition device or an electron beam deposition device, and may also include a thermal deposition device or a pulsed laser deposition device.

[0043] A sputtering deposition apparatus may be an apparatus that accelerates plasma using ionized gas in a low vacuum, collides with a target, and ejects atoms to form a thin film on a substrate. An electron beam deposition apparatus may be an apparatus that mounts a substrate on which a thin film of a metal or ceramic material is to be deposited inside a vacuum chamber that maintains a high vacuum, and then evaporates the target from a source formed of the target to be deposited on the substrate and deposits it on the substrate.

[0044] Furthermore, in yet another aspect of the present disclosure, the superconducting wire manufactured by the apparatus in which the pre-processing module forms an adhesive layer on a substrate includes a substrate, an adhesive layer formed on the substrate, a buffer layer formed on the adhesive layer, and a superconducting layer formed on the buffer layer.

[0045] Here, the adhesive layer is composed of a Ni layer, a Cr layer, a Ti layer, or a NiCr layer, and the thickness of the adhesive layer can be configured to be 5 nm or more and 50 nm or less, either simultaneously or separately.

[0046] As an example, FIG. 8 shows the configuration of a superconducting wire manufactured using an apparatus in which the pretreatment module forms an adhesive layer. As shown, the superconducting wire of the present invention can further have an adhesive layer formed between the substrate and the Al2O3 diffusion prevention layer, which is the first buffer layer.

[0047] Hereinafter, as yet another embodiment, a case where the pre-treatment module is configured to perform plasma surface treatment on a substrate will be described.

[0048] Referring again to FIG. 7, the pre-treatment module PM may include a plasma generator PM_p that generates plasma, and the plasma generated in the plasma generator PM_p may be used to perform plasma surface treatment on the substrate.

[0049] The plasma generator can be a device that dissociates a reactive gas using an electromagnetic field to generate plasma containing free electrons, positive ions, neutral atoms, neutral molecules, and the like.

[0050] Here, the reactive gas used in the plasma generator PM_p can include at least one of Ar and O2. When the reactive gas includes Ar, impurities on the wire surface are cleaned by Ar bombardment, the surface roughness of the substrate is improved, and the bonding area is increased, thereby improving the adhesion between the substrate and the first buffer layer. Furthermore, when the reactive gas includes O2, organic matter on the substrate surface is removed by an oxygen reaction (O2 reaction), and wettability is improved by oxidizing the substrate surface, thereby improving the adhesion between the substrate and the first buffer layer. Based on this principle, the present invention can use Ar, O2, or a mixture of Ar and O2 as the reactive gas.

[0051] The general structure of an apparatus 10 for producing superconducting wire according to one embodiment of the present disclosure will be described below.

[0052] Referring again to FIGS. 2 to 7, multiple deposition modules DM can be arranged in series.

[0053] Each of the multiple deposition modules DM for depositing buffer layers and superconducting layers may include a transfer device 100 for multi-turning a substrate or wire (a substrate on which at least one buffer layer is formed, hereinafter referred to as a substrate).

[0054] FIG. 9 is a diagram showing a multi-turn transfer device according to one embodiment of the present disclosure. The multi-turn transfer device 100 of the present invention includes a first reel unit 110 and a second reel unit 120 spaced apart in the left-right direction. The first reel unit 110 and the second reel unit 120 include upper rolls 111 and 121 and lower rolls 112 and 122, respectively. The upper rolls 111 and 121 and the lower rolls 112 and 122 of the first reel unit 110 and the second reel unit 120 are each configured with a plurality of rollers 130 installed thereon, and the device can be considered a multi-turn reel-to-reel device in which a substrate is configured to make multiple turns between the first reel unit 110 and the second reel unit 120.

[0055] In one embodiment, the apparatus 10 may have the multi-turn transfer devices 100 of each of the deposition modules DM configured to have the same size and structure. In this manner, the multi-turn transfer devices 100 of each deposition module DM may be configured in the same manner, thereby reducing the manufacturing cost of the entire apparatus and simplifying the design of the equipment.

[0056] 10 is a schematic diagram of two adjacent deposition modules viewed from the front, and FIG. 11 is a schematic diagram of two adjacent deposition modules viewed from above. The two adjacent deposition modules DM_m and DM_m+1 may be spaced apart from each other or may be closely spaced from each other (not shown), and the substrates and wires may be configured not to be exposed to the outside between the connection parts of the two deposition modules DM_m and DM_m+1.

[0057] In one embodiment, the deposition modules, each including the multi-turn transfer device, may be arranged in a row in the left-right direction, and one of the multi-turn transfer devices of each of two adjacent deposition modules may be arranged to protrude forward compared to the other multi-turn transfer device, so that the substrate or wire may be transferred in a straight line between the two adjacent deposition modules.

[0058] 11, one of the multi-turn transfer devices 100 of two adjacent deposition modules DM_m and DM_m+1 may be arranged to protrude forward compared to the other. This is to properly align the transfer direction of the substrates exiting the multi-turn transfer device 100 of one deposition module DM with the transfer direction of the substrates entering the multi-turn transfer device 100 of the adjacent deposition module DM. By arranging the two adjacent deposition modules DM_m and DM_m+1 to be offset in the forward and backward directions, substrates can be transferred in a straight line between the two adjacent deposition modules DM_m and DM_m+1. This prevents the substrates from being distorted or bent and damaged during the transfer process.

[0059] 11 emphasizes the arrangement of two adjacent deposition modules DM_m and DM_m+1, and a more realistic example can be seen in FIG. 6, which corresponds to a cross-sectional view in the height direction of FIG. 2. Furthermore, assuming that the deposition modules DM are numbered first, second, and third deposition modules, the deposition modules may be arranged in parallel, receding or protruding, such that the first deposition module protrudes forward from the second deposition module and the second deposition module protrudes forward from the third deposition module, or may be arranged in a zigzag pattern, such that the first deposition module protrudes forward from the second deposition module and the third deposition module protrudes forward from the second deposition module. These two arrangements may be combined, with some of the modules receding or protruding in parallel and the rest arranged in a zigzag pattern.

[0060] In one embodiment, the plurality of deposition modules including the multi-turn transfer device may be configured such that guide rollers for transporting the substrate are disposed on both sides of each deposition module in the left-right direction, and the substrate is transferred between two adjacent deposition modules by the guide rollers.

[0061] 10 and 11, guide rollers 500 are disposed on both the left and right sides of each deposition module DM, i.e., on one and the other left and right sides of the multi-turn transfer device 100 of the deposition module DM, respectively, and substrates can be transferred between two adjacent deposition modules DM_m and DM_m+1 by the guide rollers 500. Here, the guide rollers 500 can be configured to adjust the transfer direction and angle of the substrates, thereby helping to transfer the substrates in a straight line.

[0062] 10, the deposition module DM of the manufacturing apparatus according to the present disclosure may include a deposition apparatus 200 for depositing a buffer layer or a superconducting layer on a substrate. The deposition apparatus 200 may be disposed below the substrate, which is multi-turned by a multi-turn transfer apparatus. The deposition apparatus 200 may be a sputtering deposition apparatus or an electron beam deposition apparatus, as with the deposition apparatus PM_d of the pre-treatment module described above, and may be appropriately selected depending on the type of buffer layer or the type of superconducting layer.

[0063] In one embodiment, each deposition module DM includes a fixing plate 300 on which the deposition device 200 of the deposition module DM is placed and fixed, and the fixing plate 300 may be configured to be movable in the vertical direction. The fixing plate 300 may be moved manually or automatically, and for this purpose, a device such as an actuator may be further provided.

[0064] As described above, since the fixing plate 300 is configured to move in the vertical direction, the distance between the substrate and the deposition device 200 can be adjusted to adjust the deposition amount. Furthermore, when a specific operation needs to be performed on the deposition device 200, such as replacing the deposition device 200 or cleaning the deposition plate, the fixing plate 300 can be used to move the deposition device 200 downward, allowing for work to be performed in a larger space, thereby improving accessibility and work convenience.

[0065] Meanwhile, referring again to the superconducting wire corresponding to the example shown in FIG. 1, a LaMnO3, i.e., lanthanum manganite (LMO) strain-matching layer can be formed on the top of the buffer layer as a fifth buffer layer. FIG. 12 shows the crystal structure of lanthanum manganite, and a superconducting layer can be formed on such a lanthanum manganite strain-matching layer, where the superconducting layer can be deposited by sputtering. However, the sputtering is performed by using Ar as the target. + This method involves colliding ions to eject molecules, depositing a thin film onto a substrate or wire. During this process, the oxygen (O - ) was separated from LaMnO x To complement this, oxygen (O2) gas is added along with Ar gas, and the ejected LMO x The bonding of lanthanum manganite and oxygen can induce the formation of a thin film of normal LMO molecules. However, the LMO thin film formed in the wire may be partially oxygen-deficient, resulting in the existence of oxygen vacancies. This can ultimately result in the formation of an LMO thin film with locally different composition ratios, which can cause changes over time in the formed lanthanum manganite buffer layer, reduce the crystallinity of the superconducting layer, and lead to a decrease in the performance of the resulting superconducting wire.

[0066] On the other hand, the device 10 according to the present disclosure proposes the following configuration to solve such problems.

[0067] In one embodiment, the apparatus 10 may be configured such that a deposition module for a top buffer layer that deposits the top buffer layer performs a plasma surface treatment on the top buffer layer while depositing the top buffer layer. The deposition module for the top buffer layer may also include a plasma generator that generates O2 plasma, and the top buffer layer may be configured to perform a plasma surface treatment on the top buffer layer using the O2 plasma generated by the plasma generator.

[0068] As described above, the manufacturing apparatus according to the present disclosure can deposit an LMO layer having an ideal composition ratio by using the top buffer layer deposition module DM_b_top to inject activated oxygen ions using remote plasma while depositing the top buffer layer, thereby suppressing deterioration over time of the top buffer layer, particularly the lanthanum manganite buffer layer, and minimizing deterioration of the properties of the superconducting wire.

[0069] The above-mentioned uppermost buffer layer refers to the buffer layer that is disposed at the top of the multiple buffer layers and on which the superconducting layer is formed, and as described above, the uppermost buffer layer may be a lanthanum manganite layer.

[0070] Referring to FIG. 13 , which schematically illustrates the deposition module for the top buffer layer, the deposition module for the top buffer layer DM_b_top includes a deposition apparatus 200 for depositing the top buffer layer and a plasma generator 400 for generating plasma. The deposition apparatus 200 can be used to deposit the top buffer layer, and the plasma generated by the plasma generator 400 can be used to perform plasma surface treatment on the top buffer layer.

[0071] Here, O2 can be used as the reactive gas in the plasma generator 400. That is, the deposition module DM_b_top for the uppermost buffer layer can be configured so that the surface of the wire on which lanthanum manganite has been deposited in a vacuum state is exposed to the O2 plasma by the O2 plasma generator 400.

[0072] This resulted in the deposition of LaMnO on the surface of the wire. x The reaction between LMO and oxygen transforms the LaMnO3 into a stable crystalline structure, improving the crystallinity of the LMO and reducing surface roughness. Ultimately, the crystallinity of the superconducting thin film formed on the LMO layer, which serves as the top buffer layer, is improved, improving the properties of the superconducting wire.

[0073] In one embodiment, the plasma generation source of the plasma generation device 400 may be an ion source or a remote plasma source (RPS). Also, one or more plasma generation devices 400 may be configured, and here, as shown in Fig. 13, the plasma generation device 400 may be disposed on both sides and on the top of the multi-turn transfer device 100, i.e., in at least one of areas A1, A2, and A3 in the drawing.

[0074] As described above, according to the present disclosure, a predetermined pretreatment process can be performed before a buffer layer is deposited on a substrate to strengthen the adhesion between the substrate and the buffer layer, and by configuring an apparatus by arranging multiple deposition modules of the same structure in parallel, manufacturing costs can be reduced and equipment design can be simplified. Before depositing a superconducting layer, plasma surface treatment can be performed on the uppermost buffer layer below it, thereby improving the crystallinity of the wire, reducing surface roughness, and improving the properties of the superconducting wire.

[0075] Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art will understand that the present invention may be embodied in other specific forms without changing the technical spirit or essential features thereof. Therefore, it should be understood that the above-described embodiments are illustrative in all respects and not limiting.

Claims

1. An apparatus for manufacturing a superconducting wire, comprising: an unwinder that unwinds the substrate; a plurality of deposition modules for depositing a buffer layer and a superconducting layer in sequence on the substrate unwound from the unwinder; a winder for winding up the substrate on which the buffer layer and the superconducting layer have been deposited after passing through the deposition module; a pre-treatment module disposed before the plurality of deposition modules, for performing a predetermined pre-treatment process on the substrate before a buffer layer is deposited on the substrate; The pretreatment module is configured to perform a pretreatment process for strengthening adhesion between the substrate and the buffer layer.

2. The apparatus for manufacturing a superconducting wire according to claim 1 , wherein the pretreatment module forms an adhesive layer on the substrate.

3. the pre-treatment module includes a deposition device, and the deposition device deposits an adhesion layer on the substrate; 3. The apparatus for producing a superconducting wire according to claim 2, wherein the vapor deposition device is a sputtering vapor deposition device or an electron beam vapor deposition device.

4. The apparatus for manufacturing a superconducting wire according to claim 1 , wherein the pretreatment module is configured to perform a plasma surface treatment on the substrate.

5. The pretreatment module includes a plasma generator that generates plasma, and is configured to perform plasma surface treatment on the substrate by the plasma generated by the plasma generator. The reactive gas used in the plasma generator is Ar and O. ２ 5. The apparatus for manufacturing a superconducting wire according to claim 4, comprising at least one of the following:

6. Among the plurality of buffer layer deposition modules, a deposition module for depositing a top buffer layer disposed at the top of the buffer layers is referred to as a top buffer layer deposition module.

2. The apparatus for manufacturing a superconducting wire according to claim 1, wherein the vapor deposition module for the uppermost buffer layer is configured to perform a plasma surface treatment on the uppermost buffer layer while depositing the uppermost buffer layer.

7. The deposition module for the top buffer layer is O ２ The plasma generator generates plasma, and the O generated by the plasma generator ２ 7. The apparatus for producing a superconducting wire according to claim 6, wherein the apparatus is configured to perform plasma surface treatment on the uppermost buffer layer by using plasma.

8. the pre-treatment module includes a multi-turn transfer device that moves the substrate in multiple turns; 8. The apparatus for manufacturing a superconducting wire according to claim 7, wherein the plasma generator is disposed on at least one of both sides and an upper portion of the multi-turn conveying device.

9. 7. The apparatus for producing a superconducting wire according to claim 6, wherein the uppermost buffer layer is a lanthanum manganite layer.

10. Each of the deposition modules includes a multi-turn transfer device that moves the substrate in multiple turns; 2. The apparatus for manufacturing a superconducting wire according to claim 1, wherein the multi-turn transfer devices of the respective deposition modules have the same size and structure.

11. The deposition modules are arranged in a row in the left-right direction, One of the multi-turn transfer devices of each of two adjacent deposition modules is disposed to protrude forward compared to the other one, The apparatus for manufacturing a superconducting wire according to claim 10 , wherein the substrate is transferred in a straight line between the two adjacent deposition modules.

12. guide rollers for transporting the substrate are disposed on both sides of each of the deposition modules in the left-right direction; The apparatus for manufacturing a superconducting wire according to claim 10 , wherein the guide rollers are configured to transfer the substrate between two adjacent deposition modules.

13. each of the deposition modules includes a deposition device for depositing a buffer layer or a superconducting layer on the substrate, and a fixing plate on which the deposition device is placed and fixed; 11. The apparatus for producing a superconducting wire according to claim 10, wherein the fixing plate is configured to be movable in the vertical direction.

14. A superconducting wire manufactured by the apparatus according to claim 2, A substrate; an adhesive layer formed on the substrate; a buffer layer formed on the adhesive layer; a superconducting layer formed on the buffer layer.

15. the adhesive layer is a Ni layer, a Cr layer, a Ti layer, or a NiCr layer; 15. The superconducting wire according to claim 14, wherein the adhesive layer has a thickness of 5 to 50 nm.

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