Half-bridge switch nodes shielded from input voltage and ground

Abstract

The present invention relates to a semiconductor device including a semiconductor switching element, a semiconductor device package for encapsulating the semiconductor switching element, a first electrode for supplying a first voltage to the semiconductor switching element, and a second electrode for supplying a second voltage to the semiconductor switching element, wherein the first voltage is greater than a second voltage when the semiconductor switching element is open, the first electrode and the second electrode being provided on one side of the semiconductor device package and adapted to be soldered to a printed circuit board, the semiconductor device further including a first shield electrode, the shield electrode being disposed between the first electrode and the second electrode, the shield electrode being coupled to a third voltage less than the first voltage and greater than the second voltage, and the semiconductor device being disposed such that a creepage distance between the first electrode and the second electrode is increased.

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device.The present invention further relates to a printed circuit board.The present invention further relates to a driver.The present invention further relates to a lighting fixture. [Background technology]

[0002] Safe operation of light emitting diodes (LEDs), drivers, and other switched-mode power supplies (SMPS) requires compliance with creepage distances, clearance distances, and distance through insulation, which are defined, for example, in IEC 60664, Insulation Coordination of Equipment in Low-Voltage Systems. By fully utilizing the benefits of wide bandgap (WBG) semiconductors (Silicon Carbide (SiC), Gallium Nitride (GaN)) in SMPS, the peak working voltage and switching frequency can be significantly higher than those of state-of-the-art SMPSs using silicon (Si) semiconductors.

[0003] A certain physical distance between the first and second electrodes is required to ensure safe operation by meeting creepage and clearance requirements. When a semiconductor switching element within a semiconductor device is open, a first voltage is present across the semiconductor device, i.e., between the first and second electrodes. If the creepage and clearance requirements are not met—for example, if the creepage distance provided between the first and second electrodes is smaller than that required for a particular voltage—voltage breakdown can occur between the first and second electrodes. This breakdown occurs on the surface of the semiconductor switching element. Dielectric breakdown not only causes undesired circuit operation but also creates a fire risk. Creepage and clearance requirements are primarily determined by the voltage amplitude and voltage frequency. An increase in voltage or frequency results in an increase in the required creepage and clearance distance. Figure 1 shows the maximum bounds for maintaining a 20 mm creepage distance for various voltage amplitudes and frequencies. With new solid-state devices, such as gallium nitride (GaN) and silicon carbide (SiC) semiconductors, the switching frequency of semiconductor switching elements can be significantly increased. This can be beneficial when used in switched-mode power supplies (SMPSs), as it allows for further miniaturization of the SMPS. Figure 1 shows that to maintain a creepage distance of 20 mm, the voltage must be dramatically reduced to operate at higher frequencies. For an SMPS to operate at both high frequencies and high voltages, the creepage distance must be significantly increased. Operating at 1.5 MHz with a voltage of 500 V can result in a creepage distance of 10 mm. As can be seen, such large creepage distances hinder any form of miniaturization. Summary of the Invention [Problem to be solved by the invention]

[0004] It is an object of the present invention to provide a semiconductor device that does not or only poorly experiences creepage requirements when operated at relatively high voltages at high operating frequencies. [Means for solving the problem]

[0005] To overcome this problem, a first aspect of the present invention provides a semiconductor device, comprising: a semiconductor switching element; - a semiconductor device package for encapsulating a semiconductor switching element; a first electrode for supplying a first voltage to the semiconductor switching element; a second electrode for supplying a second voltage to the semiconductor switching element; when the semiconductor switching element is open, the first voltage is greater than the second voltage; the first electrode and the second electrode are provided on one side of the semiconductor device package and adapted to be soldered to a printed circuit board; The semiconductor device further includes a first shield electrode; The shield electrode is disposed between the first electrode and the second electrode, the shield electrode is coupled to a third voltage that is smaller than the first voltage and greater than the second voltage, and is disposed such that a creepage distance between the first electrode and the second electrode is increased.

[0006] The semiconductor switching element is preferably implemented as an integrated circuit (IC). The semiconductor switching element is encapsulated in a package that can be mounted on a printed circuit board (PCB). The semiconductor switching element can be closed and opened, respectively, thereby creating and interrupting a conductive path between a first electrode and a second electrode. The semiconductor device may be coupled to a first voltage that can be connected or disconnected to another electronic component using the semiconductor device. The first electrode may be coupled to the first voltage, and the second electrode may be connected to the other electronic component or a second voltage. The claimed semiconductor device also includes at least a first shield electrode. This shield electrode is coupled to a third voltage having an amplitude between the first and second voltages. The shield electrode is further disposed between the first and second electrodes. It is the inventor's insight that creepage distance increases exponentially with voltage amplitude at high frequencies. Therefore, a decrease in voltage exponentially decreases the required creepage distance. By placing a shield electrode between the first electrode and the second electrode and connecting the shield electrode to a voltage between the first and second voltages, two voltage differences are created. First, a voltage exists between the first electrode and the shield electrode. Second, a voltage exists between the shield electrode and the second electrode. Both of these voltages are lower than the voltage between the first electrode and the second electrode. However, the sum of the two voltages may be equal to the voltage between the first electrode and the second electrode. Due to the exponential decrease in creepage distance, the total creepage distance is reduced. As an example, the voltage between the first electrode and the second electrode may be 500 V and have a frequency of 1.5 MHz, and the semiconductor switching element switches at the frequency of 1.5 MHz. Here, the first voltage may be 500 V and the second voltage may be 0 V. The shield electrode is located exactly halfway between the first electrode and the second electrode and is connected to a voltage of 250 V.The creepage between the first electrode and the shield electrode should be the same as the creepage between the shield electrode and the second electrode. In this example, the creepage for a voltage of 250V at 1.5MHz is approximately 0.5mm.

[0007] Because the total creepage distance is reduced, semiconductor devices can be made smaller while operating at higher voltages and frequencies.

[0008] In a further example, the shield electrode is further positioned to provide a conductive path from one end of the semiconductor device package to another opposing end of the semiconductor device package.

[0009] To further improve creepage distance, the shield electrode provides a conductive path from one end of the semiconductor device package to another opposing end of the semiconductor device package, which provides a safe method of achieving the required creepage distance because the first voltage cannot bypass the shield electrode.

[0010] In a further example, the shield electrode is positioned closer to the second electrode than to the first electrode.

[0011] The closer the shield electrode is to the second electrode, the lower the third voltage can be, which can allow a lower voltage to be generated as the third voltage and simplify the voltage source that supplies the third voltage.

[0012] In a further example, the shield electrode is disposed intermediate the first electrode and the second electrode.

[0013] Furthermore, placing the shield electrode intermediate the first and second electrodes provides a symmetrical voltage distribution: the voltage across the first and shield electrodes can be the same as the voltage across the shield and second electrodes.

[0014] In a further example, the third voltage is half the first voltage.

[0015] Preferably, in combination with the shield electrode being disposed midway between the first electrode and the second electrode, the voltage can be evenly distributed.

[0016] In a further example, the semiconductor device includes either a gallium nitride (GaN) semiconductor material or a silicon carbide (SiC) semiconductor material.

[0017] The use of GaN or SiC semiconductor materials allows for higher frequency operation, with even more stringent creepage requirements.

[0018] In a further example, the semiconductor switching element is a diode.

[0019] The diode may have only a first electrode and a second electrode. No other electrodes are required. A shield electrode can easily be placed between the first and second electrodes.

[0020] In a further example, the semiconductor switching element includes a control electrode for providing a control signal to control the semiconductor switching element, and the semiconductor switching element is a transistor.

[0021] Instead of a diode, the semiconductor switching element may be a transistor. GaN and SiC may be used for diodes and for transistors such as MOSFETs (Metal Oxide Silicon Field Effect Transistors).

[0022] In a further example, a printed circuit board (PCB) is provided. a first trace adapted to be supplied with a first voltage and coupled to the first electrode; a second trace adapted to be supplied with a second voltage and coupled to the second electrode; a semiconductor device according to any of the preceding examples; Includes.

[0023] The creepage performance of any PCB on which a semiconductor device is mounted can also be improved. A first voltage is supplied to a first electrode via a first trace. A second voltage is supplied to a second electrode via a second trace.

[0024] In a further example, a third trace is adapted to be supplied with a third voltage and is coupled to a shield electrode, the shield electrode being physically disposed between the first trace and the second trace.

[0025] Additionally, a third trace may be used to supply a third voltage to the shield electrode. If the difference between the second voltage and the third voltage is relatively small compared to the difference between the first voltage and the third voltage, the third trace may be located close to the second trace, which allows for easier layout of the traces on the PCB.

[0026] Preferably, traces to and from the semiconductor device are placed on inner layers of the PCB. Inner layers are free of creepage and therefore have no creepage requirements. Vias under the semiconductor device can be electrically coupled directly to electrodes on the semiconductor device. This minimizes creepage-related problems at the PCB level. Optionally, a coating may be applied to the top layer of the PCB to reduce or eliminate creepage problems. Such a layer may be, for example, an acrylic, silicone, or urethane resin.

[0027] In a further example, a driver for driving a light emitting diode (LED) lighting load is provided. The driver comprises: - PCB and - electrical components provided on a PCB to form a switched mode power supply using a semiconductor switching element as a main power conversion switch; Includes.

[0028] Preferably, the present invention is embodied in a driver for driving an LED lighting load. The driver is preferably very small, for example in retrofit applications where the driver needs to be integrated into a retrofittable housing such as an Edison screw bulb. Small drivers are also preferred in other applications, such as integrating the driver into or with a rail system.

[0029] In further examples, the driver is configured as either a buck converter, a boost converter, a buck-boost converter, an LLC converter or a flyback converter.

[0030] Preferably, the driver is either a buck converter, a boost converter, a buck-boost converter, an LLC converter or a flyback converter.

[0031] In a further example, the driver includes a second semiconductor device, and the semiconductor device and the second semiconductor device are arranged to operate the switched mode power supply as a synchronous switched mode power supply.

[0032] Providing a second semiconductor device according to the present invention allows the driver to operate with even greater miniaturization. SMPSs often use two semiconductor devices to operate and deliver regulated power to the load. When both are semiconductor devices according to the present invention, the driver is optimized. When both semiconductor devices are transistors, the driver can operate as a synchronous converter.

[0033] In a further example, the driver includes a second semiconductor device, and the semiconductor device and the second semiconductor device are arranged to operate as a half bridge.

[0034] Instead of operating as a synchronous converter, the driver may use a half-bridge topology. For example, a resonant converter uses a half-bridge with two semiconductor devices coupled in series. The node between the two semiconductor devices is coupled to a resonant tank. Another benefit of this topology is that the node between the two semiconductor devices can be used to derive a third voltage.

[0035] In another example, a lighting fixture is provided. The lighting fixture includes a driver and an LED lighting load. [Brief explanation of the drawings]

[0036] Examples of the present invention will now be described with reference to the accompanying drawings. [Figure 1] An example of a graph showing the relationship between voltage amplitude and frequency using a creepage of 20 mm is shown. [Figure 2] 1 illustrates an embodiment of a semiconductor device. [Figure 3] 1 illustrates a further embodiment of a semiconductor device. [Figure 4] 1 illustrates an embodiment of a semiconductor device in the form of a diode. [Figure 5] 1 illustrates an embodiment of an application of a semiconductor device in an electronic circuit. DETAILED DESCRIPTION OF THE INVENTION

[0037] The present invention will now be described with reference to the drawings.

[0038] It should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the devices, systems, and methods, are for purposes of illustration only and are not intended to limit the scope of the invention. These and other features, aspects, and advantages of the devices, systems, and methods of the present invention will become better understood from the following description, the appended claims, and the accompanying drawings. It should be understood that the drawings are merely schematic and are not drawn to scale. It should also be understood that the same reference numerals are used to denote the same or similar parts throughout the drawings.

[0039] The present invention relates to a semiconductor device 5 comprising a semiconductor switching element M1, a semiconductor device package for encapsulating the semiconductor switching element M1, a first electrode for supplying a first voltage to the semiconductor switching element M1, and a second electrode for supplying a second voltage to the semiconductor switching element M1, wherein the first voltage is greater than the second voltage when the semiconductor switching element M1 is open.

[0040] The first electrode and the second electrode are provided on one side of the semiconductor device package and are adapted to be soldered to a printed circuit board. The semiconductor device 5 further includes a first shield electrode, the shield electrode being disposed between the first electrode and the second electrode, the shield electrode being coupled to a third voltage less than the first voltage and greater than the second voltage, and being disposed such that a creepage distance between the first electrode and the second electrode is increased.

[0041] FIG. 2 shows an example of a semiconductor device 5. The semiconductor device 5 is an IC having a semiconductor circuit incorporated within a package. The semiconductor device 5 includes a semiconductor switching element M1. In this example, the semiconductor switching element M1 is shown as a transistor, e.g., a MOSFET. The semiconductor device 5 may include additional circuitry incorporated to control the semiconductor switching element M1, such as a gate driver. The gate driver may be powered and receive a control signal via electrode 4. Alternatively, only the semiconductor switching element M1 may be provided within the package, with the semiconductor switching element M1 receiving a control signal via electrode 4. In this case, an external gate driver may be used to provide the gate drive signal. The semiconductor switching element M1, and optionally additional electronics, are encapsulated in a semiconductor device package to form an IC. A first electrode 1 is provided for the semiconductor device 5. The first electrode 1 may be used for soldering to a first trace on a PCB. In the example of a transistor or MOSFET as the semiconductor switching element M1, the first electrode 1 may be connected to the collector or drain of the semiconductor switching element M1. A second electrode 2 is provided for the semiconductor device 5. The second electrode 2 may be used for soldering to a second trace on the PCB. In the example of a transistor or MOSFET as the semiconductor switching element M1, the second electrode 2 may be connected to the emitter or source of the semiconductor switching element M1, and preferably, all electrodes are provided on one side of the semiconductor device package. FIG. 2 shows that all electrodes are provided on the bottom side of the semiconductor device package. Alternatively, all electrodes can be provided on the periphery side of the semiconductor device package. The semiconductor device 5 further has at least one shield electrode 3, preferably located on the same side of the semiconductor device package as the first electrode 1 and the second electrode 2. The shield electrode 3 is located between the first electrode 1 and the second electrode 2. The shield electrode 3 is preferably coupled to a third trace on the PCB. The first electrode 1 is coupled to a first voltage. The second electrode 2 is coupled to a second voltage that is smaller than the first voltage.The shield electrode 3 is coupled to a third voltage that is less than the first voltage and greater than the second voltage.

[0042] FIG. 2 shows a first shield electrode 3 provided at one end of the semiconductor device package and a second shield electrode 3 provided at the opposite end of the semiconductor device package. In this example, it is assumed that the creepage distance between the first electrode 1 and the second electrode 2 on the semiconductor device package meets requirements and is therefore acceptable. However, creepage distance through the PCB can be more complicated. Therefore, while the creepage distance between the first electrode 1 and the second electrode 2 on the semiconductor device package is good, the creepage distance between the first electrode 1 and the second electrode 2 on the PCB may not be good. The first electrode 3 and the second electrode 3 located at the edge of the semiconductor device package increase the creepage distance between the first electrode 1 and the second electrode 2 on the PCB. Depending on the electrode layout, a single shield electrode 3 may be sufficient, for example, if the first electrode 1 is located further to the left or right of the semiconductor device package.

[0043] To improve the creepage distance in the semiconductor device package, the shield electrode 3 may be positioned to interrupt the direct creepage path between the first electrode 1 and the second electrode 2. The shield electrode 3 effectively stands in the creepage path, forcing the creepage path to pass by the shield electrode 3 and effectively increasing the creepage between the first electrode 1 and the second electrode 2. The introduction of the shield electrode 3 into the creepage path provides two additional creepage requirements: a creepage between the first electrode 1 and the shield electrode 3 and a creepage between the shield electrode 3 and the second electrode 2. The shield electrode 3 is coupled to a voltage between a first voltage and a second voltage. Therefore, the voltage between the first electrode 1 and the shield electrode 3 and the voltage between the shield electrode 3 and the second electrode 2 are lower than the voltage between the first electrode 1 and the second electrode. This means that a smaller creepage distance is required between the first electrode 1 and the shield electrode 3, and between the shield electrode 3 and the second electrode 2. As an example, the first voltage may be 480 V. The semiconductor switching element M1 may switch at a frequency of 1 MHz. The second voltage may be 0 V. At a voltage of 500 V at a frequency of 1.5 MHz, a creepage distance of 10 mm is required between the first electrode 1 and the second electrode 2. If the third voltage is a steady level of 250 V, the creepage distance between the first electrode 1 and the shield electrode needs to be approximately 0.5 mm, and the creepage distance between the shield electrode 3 and the second electrode needs to be approximately 0.5 mm. The sum of the required creepage distances between the first electrode 1 and the shield electrode 3 and between the shield electrode 3 and the second electrode 2 is smaller than the required creepage distance between the first electrode 1 and the second electrode 2. The shield electrode 3 can be dimensioned to extend the creepage distance between the first electrode 1 and the second electrode 2 .

[0044] FIG. 3 shows another example of a semiconductor device 5. In this example, a transistor is used as the semiconductor switching element M1. The semiconductor device 5 may be constructed similarly to the semiconductor device 5 shown in FIG. 2. The semiconductor device 5 improves creepage distance on the semiconductor device package. The shield electrode 3 extends from one end of the semiconductor device package to the opposite or other end of the semiconductor device package. The shield electrode not only lies in the creepage path between the first electrode 1 and the second electrode 2, but also effectively blocks the path on the side of the semiconductor device package where the electrodes are located. Therefore, creepage distance is further improved. In this example, the creepage requirements on the semiconductor device package are significantly improved, so creepage distance is likely to become more important on the PCB.

[0045] For the example of semiconductor switching element M1 as a transistor, the creepage distance is specified as the distance between first electrode 1 and second electrode 2. Other creepage distances may also be relevant where shield electrode 3 may provide creepage improvement. An example is the creepage distance between first electrode 1 and electrode 4. The voltage on electrode 4 will not be significantly different from the voltage on first electrode 1.

[0046] FIG. 4 illustrates an example of a semiconductor device 5 including a semiconductor switching element M1, which may be a diode. A diode has only two pins, an anode and a cathode. The anode may be coupled to a first electrode 1, and the cathode may be coupled to a second electrode 2. As in the example where the semiconductor switching element M1 is a transistor, a shield electrode 3 is provided between the first electrode 1 and the second electrode 2. In the example provided in FIG. 4, the first shield electrode 3 is provided at one end of the semiconductor device package, and the second shield electrode 3 is provided at the opposite end of the semiconductor device package. In this example, it is assumed that the creepage distance between the first electrode 1 and the second electrode 2 in the semiconductor device package meets requirements and is therefore acceptable. However, creepage distance through a PCB can be more complicated. Therefore, while the creepage between the first electrode 1 and the second electrode 2 in the semiconductor device package is good, the creepage between the first electrode 1 and the second electrode 2 in the PCB may not be good. The first and second electrodes 3 located at the edges of the semiconductor device package increase the creepage distance through the PCB between the first electrode 1 and the second electrode 2. Depending on the electrode layout, a single shield electrode 3 may be sufficient, for example, if the first electrode 1 is located further to the left or right of the semiconductor device package.

[0047] To improve creepage distance in a semiconductor device package, the shield electrode 3 may be positioned to prevent a direct creepage path between the first electrode 1 and the second electrode 2. The shield electrode 3 effectively stands in the creepage path, forcing the creepage path to pass by the shield electrode 3 and effectively increasing the creepage between the first electrode 1 and the second electrode 2. The introduction of the shield electrode 3 into the creepage path provides two additional creepage requirements: a creepage between the first electrode 1 and the shield electrode 3 and a creepage between the shield electrode 3 and the second electrode 2. The shield electrode 3 is coupled to a voltage that is between a first voltage and a second voltage. Therefore, the voltage between the first electrode 1 and the shield electrode 3 and the voltage between the shield electrode 3 and the second electrode 2 are lower than the voltage between the first electrode 1 and the second electrode. This means that a shorter creepage distance is required between the first electrode 1 and the shield electrode 3 and between the shield electrode 3 and the second electrode 2.

[0048] Similar to FIG. 3, a semiconductor device 5 having a diode as a semiconductor switching element M1 may also include a shield electrode 3 extending from one end of the semiconductor device package to the opposite or other end of the semiconductor device package. The shield electrode not only lies in the creepage path between the first electrode 1 and the second electrode 2, but also effectively blocks the path on the side of the semiconductor device package where the electrodes are located. Therefore, creepage distance is further improved. In this example, creepage requirements on the semiconductor device package are significantly improved, so creepage distance is likely to become more critical on the PCB.

[0049] 5 shows an example of an implementation of the semiconductor device 5. Two semiconductor devices 5 are provided and coupled in series. This connection may be used in several applications, such as a half-bridge configuration or an SMPS in which one semiconductor device 5 comprises transistors as the semiconductor switching elements M1 and M2 and the other semiconductor device 5 comprises diodes as the semiconductor switching elements M1 and M2. Alternatively, if the SMPS is configured as a synchronous converter, the other semiconductor device 5 comprises transistors as the semiconductor switching elements M1 and M2.

[0050] Shield electrodes Shield_1 and Shield_2 are shield electrodes 3 of the corresponding semiconductor devices 5. In the example shown in FIG. 5, each semiconductor device 5 has a transistor as a semiconductor switching element M1 or M2. A gate drive signal Vgate_H is supplied to the first semiconductor device 5, and a gate signal Vgate_L is supplied to the second semiconductor device 5′. The gate signals may be amplified or modified in the semiconductor devices 5 before being supplied to the corresponding gates of the transistors. The semiconductor devices 5 are mounted on a PCB. The gate signals Vgate_L and Vgate_H are supplied to the corresponding semiconductor devices 5 via traces on the PCB. A first voltage is supplied to a first electrode 1 of the first semiconductor device 5 via the trace. A second electrode 2 of the first semiconductor device 5 is coupled to a first electrode 1 of the second semiconductor device 5′. A second electrode 2 of the second semiconductor device 5′ is coupled to a second voltage supplied via a trace. All traces are mounted on the same PCB. When routing these traces on the PCB, creepage distances must be considered. Like the semiconductor devices 5, creepage distances on the PCB can be very large when operating at high voltages at high frequencies. Therefore, it is also desirable to continue the shielding from the shield electrode 3 onto the PCB. The shield electrode of the first semiconductor device 5 is coupled to a voltage Vshield_1. Preferably, the voltage Vshield_1 is provided by a voltage source. Preferably, the voltage is constant. Preferably, a voltage reference for the voltage Vshield_1 is coupled to the second electrode 2 of the first semiconductor device 5. Preferably, the voltage Vshield_2 is provided by a voltage source. Preferably, the voltage is constant. Preferably, a voltage reference for the voltage Vshield_2 is coupled to the second electrode 2 of the second semiconductor device 5'. Preferably, the voltage at the second electrode 2 is low-pass filtered to provide a voltage reference for the voltage Vshield_2. Shielding traces are strategically placed around traces carrying high voltages at high frequencies. In this case, creepage requirements are easier to comply with for these traces, i.e., the total creepage distance can be reduced.

[0051] The semiconductor device 5 as provided in the example may be implemented in a driver for driving a light-emitting diode (LED) lighting load. The driver may include a PCB with electronic circuitry located thereon, including the semiconductor device 5 and traces for coupling the circuitry. The driver may be reduced in size when implementing the semiconductor device 5. The size reduction may be further improved if the shield electrode 3 is extended by a shield trace. The driver may include any type of SMPS, such as a buck converter, a boost converter, a buck-boost converter, an LLC converter, or a flyback converter. The driver may operate as a synchronous SMPS.

[0052] The driver may be part of the lighting fixture. In this case, the lighting fixture may include the driver and the LED lighting load. The lighting fixture may be very compact because at least the size of the driver can be reduced.

[0053] The electrodes provided in the examples may have any kind of shape. They can be shaped to best fit the required design. The electrodes may also be used to cool the semiconductor device 5, i.e., function as thermal pads. Depending on the number of signals that need to be supplied to the semiconductor device, the number of electrodes may vary.

[0054] Other variations to the disclosed embodiments can be understood by those skilled in the art, from a study of the drawings, the disclosure, and the appended claims, and can be implemented in practicing the claimed invention. In the claims, the word "comprising" does not exclude other elements or steps, and the indefinite articles "a" or "an" do not exclude a plurality. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage. Any reference signs in the claims should not be interpreted as limiting the scope.

Claims

1. a semiconductor switching element; a semiconductor device package for encapsulating the semiconductor switching element; a first electrode for supplying a first voltage to the semiconductor switching element; a second electrode for supplying a second voltage to the semiconductor switching element; wherein when the semiconductor switching element is open, the first voltage is greater than the second voltage; the first electrode and the second electrode are provided on one side of the semiconductor device package and adapted to be soldered to a printed circuit board; The semiconductor device includes a first shield electrode; a shield electrode disposed between the first electrode and the second electrode, the shield electrode coupled to a third voltage that is less than the first voltage and greater than the second voltage, and the shield electrode disposed such that a creepage distance between the first electrode and the second electrode is increased.

2. 10. The semiconductor device of claim 1, wherein the shield electrode is positioned to provide a conductive path from one end of the semiconductor device package to another opposing end of the semiconductor device package.

3. The semiconductor device according to claim 1 , wherein the shield electrode is disposed closer to the second electrode than to the first electrode.

4. The semiconductor device according to claim 1 , wherein the shield electrode is disposed intermediate the first electrode and the second electrode.

5. The semiconductor device according to claim 1 , wherein the third voltage is half the first voltage.

6. 6. The semiconductor device of claim 1, wherein the semiconductor device comprises either a gallium nitride (GaN) semiconductor material or a silicon carbide (SiC) semiconductor material.

7. 7. The semiconductor device of claim 1, wherein the semiconductor switching element is a diode.

8. 8. The semiconductor device of claim 1, wherein the semiconductor switching element comprises a control electrode for supplying a control signal for controlling the semiconductor switching element, the semiconductor switching element being a transistor.

9. a first trace adapted to receive the first voltage and coupled to the first electrode; a second trace adapted to receive the second voltage and coupled to the second electrode; A semiconductor device according to any one of claims 1 to 8; a printed circuit board.

10. 10. The printed circuit board of claim 9, further comprising a third trace adapted to receive the third voltage and coupled to the shield electrode, the shield electrode being physically disposed between the first trace and the second trace.

11. 1. A driver for driving a light emitting diode lighting load, the driver comprising: A printed circuit board according to claim 9 or 10; electrical components provided on the printed circuit board to form a switched mode power supply using the semiconductor switching element as a main power conversion switch; Including the driver.

12. 12. The driver of claim 11, wherein the driver is configured as one of a buck converter, a boost converter, a buck-boost converter, an LLC converter, or a flyback converter.

13. 13. A driver as claimed in claim 11 or 12, wherein the driver includes a second semiconductor device, said semiconductor device and said second semiconductor device being arranged to operate the switched mode power supply as a synchronous switched mode power supply.

14. 13. A driver as claimed in claim 11 or 12, wherein the driver includes a second semiconductor device, the semiconductor device and the second semiconductor device being arranged to operate as a half bridge.

15. 15. A lighting fixture comprising a driver according to any one of claims 11 to 14 and a light emitting diode lighting load.

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