Optoelectronic component with integrated aperture mask - Patents.com

Abstract

It is known that, after deposition of all layers, an aperture mask is glued onto the encapsulant of the organic optoelectronic component (1,1') to shield the non-uniform edge regions (503) of the component, which causes artifacts in the component's optical signal. Aligning the aperture mask not only requires an additional work step but also is a source of significant errors. In the present invention, these drawbacks are overcome by depositing, preferably by a coating method, at least one radiation-blocking layer (3), which covers the edge regions (503) of the photodetectors (5) of the optoelectronic component (1,1') but covers no more than 30% of the selected area (502) of the optoelectronic component, directly onto the radiation-coupling layer (4), which covers the entire sensitive area (501), so that the at least one radiation-blocking layer (3) is material-to-material bonded to the radiation-coupling layer (4).

Description

[Technical Field]

[0001] The present invention relates to an optoelectronic component in the form of a laminate, comprising a photodetector having a sensitive area formed from a selected area and an edge area surrounding the selected area, the photodetector comprising at least one photoactive layer between two electrodes spaced apart from each other, wherein a first electrode, arranged in front of the second electrode in the illumination direction, is at least semi-transparent to electromagnetic radiation having a wavelength to be detected. [Background technology]

[0002] Photodetectors are used for qualitative and / or quantitative detection of electromagnetic radiation. This detection can be spectrally selective, where radiation is detected in a predetermined, specific wavelength range. In the photodetector's photoactive layer, electromagnetic radiation is converted into charge carrier pairs consisting of electrons and electron defects (holes). Organic photodetectors typically have a photoactive layer containing an organic electron donor compound (abbreviated as donor compound or donor, D), i.e., a material that releases electrons and accepts electron defects or holes, and an organic electron acceptor compound (abbreviated as acceptor compound or acceptor, A), i.e., a material that accepts electrons. The separation of the charge carrier pair required to generate an electrical signal can occur at the interface between the donor and acceptor. Once the charge carrier pair is separated, the hole in the donor and the electron in the acceptor are transported to an electrode.

[0003] The photoactive layer of the photodetector may include, for example, a mixed layer formed from a donor material and an acceptor material, often referred to as a "DA mixed layer" or "bulk heterojunction mixed layer."

[0004] Photodetectors are typically designed to detect one or more specific wavelengths or one or more specific wavelength regions of the entire spectrum of electromagnetic radiation, hereinafter referred to as "wavelengths to be detected" or "wavelength regions to be detected." The wavelengths to be detected are determined, for example, by the band gap between the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of the donor and acceptor compounds. Direct photoexcitation of intermolecular charge transfer states (CT states) at the interface between the donor and acceptor compounds can also occur. In this case, the donor and acceptor compounds do not necessarily have to be receptive in the wavelength region to be detected; that is, the band gap between the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of both the donor and acceptor compounds does not necessarily have to correspond to equivalent energies in the wavelength region to be detected. Rather, the energy of the photons of electromagnetic radiation that can be absorbed via the CT states corresponds substantially to or slightly lower than the difference between the high-energy HOMO of one compound and the low-energy LUMO of the other compound.

[0005] Lateral deviations in the thickness of the photoactive layer of a photodetector, especially when the photoactive layer is located between two mirror surfaces, i.e., in a microresonator, can lead to artifacts in the photodetector's spectral response, which in turn can lead to inaccuracies or errors in the evaluation of the optical signal. In this case, the "thickness" of the layer refers to the extent of the layer in a direction parallel to the normal to the layer's surface, which also substantially corresponds to the illumination direction.

[0006] Accordingly, "lateral" refers to the direction perpendicular to the direction in which the thickness is determined.

[0007] The illumination direction corresponds to the main direction of incidence of the electromagnetic radiation to be detected on the optoelectronic component after interaction of the electromagnetic radiation with the sample to be examined.

[0008] For example, when organic layers are deposited by PVD techniques such as thermal evaporation, uncontrollable thickness variations occur particularly frequently in the edge regions of the photoactive layer because the organic layers cannot be deposited in an ideally uniform manner, e.g., ideally forming a rectangular parallelepiped cross-section. The edge regions include a transition region before the full, desired layer thickness is reached, during which the layer thickness increase is usually not necessarily linear but uniform. The regions where thickness variations occur during deposition typically have lateral extents of tens of microns to about 150 microns, e.g., 50 microns. However, layer deposition masks can typically only be aligned with an accuracy of a few hundred microns, e.g., 200 microns. As a result, undesirable layer thickness variations can occur due to offsets between deposition masks in edge regions with lateral extents of about 50 microns to about 300 microns. These variations can lead to artifacts and, therefore, can adversely affect the optical signal. In particular, in the case of photodetectors with microresonators, undesired non-selective portions of the optical signal can also be generated by irradiating areas of the photodetector that are not located between the mirror surfaces. To avoid the above-mentioned undesirable effects, it is known that the edge areas are covered with a mask that is opaque to radiation in the wavelength range to be detected. The mask is usually made of a metallic material and has an aperture in the shape and size of the selected area of ​​the photodetector so as not to substantially reduce the selected area of ​​the photodetector and therefore the radiation power available for detection.

[0009] The aperture mask known from the prior art must be placed on the photodetector additionally, i.e. after the complete deposition of all layers of the photodetector and encapsulation of the photodetector, and therefore must be positioned and attached with micrometer precision, e.g. adhesively bonded onto the encapsulation.

[0010] The drawback is the high post-processing effort that occurs after the production of the photodetector, whereby the placement of the aperture mask also represents a significant source of error. Summary of the Invention [Problem to be solved by the invention]

[0011] SUMMARY OF THE INVENTION It is therefore an object of the present invention to overcome the above-mentioned drawbacks and to provide an optoelectronic component that does not require post-processing efforts by subsequent placement of an aperture mask. [Means for solving the problem]

[0012] This object is achieved by an optoelectronic component according to claim 1, by an associated arrangement of an optoelectronic component according to claim 5, by a method for manufacturing an optoelectronic component according to claim 6, and by the use of an optoelectronic component or an arrangement according to claim 7. Developments of the invention are set out in the dependent claims.

[0013] The present invention achieves this goal in that the aperture mask is not located external to the photodetector encapsulated stack, but instead is integrated into the stack.

[0014] The optoelectronic component according to the invention in the form of a stack comprises at least one photodetector having at least one photoactive layer arranged between two electrodes spaced apart from one another. The photoactive layer is illuminated through a first of the two electrodes, which is therefore configured to be at least semi-transparent to electromagnetic radiation in the wavelength range to be detected. The sensitive area of ​​the photodetector is divided into a selected area and an edge area surrounding the selected area in the form of a frame.

[0015] According to the present invention, at least one radiation-blocking layer is arranged in front of the photodetector, completely covering the sensitive region of the photodetector, i.e., both the selected region and the edge region. At least one radiation-blocking layer is arranged in front of the radiation-blocking layer. In the present invention, "radiation-blocking" means that the layer has a high absorption or, preferably, a high reflectivity for electromagnetic radiation having a wavelength that strikes the optoelectronic component and is to be detected, with an absorption or reflectivity of at least 80%, particularly preferably at least 90%, and very particularly preferably at least 95%. The at least one radiation-blocking layer is material-to-material bonded to the radiation-blocking layer. In a preferred embodiment of the present invention, the at least one radiation-blocking layer is inseparably bonded to the radiation-blocking layer by a coating method, for example, thermal evaporation. The at least one radiation-blocking layer is arranged so as to cover at least a portion of the edge region of the photodetector, covering no more than 30% of the selected region of the photodetector. It will be clear to those skilled in the art that typical alignment accuracies of masks for layer deposition cannot prevent slight coverage of the selected region. Preferably, the at least one radiation blocking layer covers no more than 20%, particularly preferably no more than 10% of the selected area of ​​the photodetector.

[0016] An optoelectronic component according to the invention may comprise a plurality of radiation-blocking layers arranged laterally offset from one another.

[0017] The radiation-blocking layer shields the edge region of the photodetector covered by the radiation-blocking layer from electromagnetic radiation, such that the edge region does not substantially contribute to signal generation in the photodetector. The radiation-blocking layer thus provides a defined aperture through which a selected region of the photodetector is illuminated, wherein the photoactive layer of the photodetector has a substantially uniform thickness below the selected region.

[0018] In the sense of the present invention, a "selective area" of a photodetector means a laterally extending area of ​​the photodetector that is sensitive to incident electromagnetic radiation having a wavelength to be detected, below which the photoactive layer of the photodetector has a sufficiently homogeneous thickness so that no artifacts due to thickness deviations in the spectral response occur.

[0019] In the sense of the present invention, the "sensitive area" of a photodetector is the lateral extent of the photodetector that is sensitive to incident electromagnetic radiation having a wavelength to be detected and in which the incident electromagnetic radiation results in a measurable optical signal that can be caused by electromagnetic radiation having a wavelength to be detected and that may also include undesired components caused by electromagnetic radiation having wavelengths other than the wavelength to be detected.

[0020] In this sense, the "edge region" corresponds to the part of the sensitive area of ​​the photodetector that is not assigned to a selected region.

[0021] The "front," "back," and "below" direction or position specifications relate to the illumination direction. Thus, if a first layer is positioned "in front" of a second layer, incident electromagnetic radiation will strike the first layer first, then the second layer.

[0022] The optoelectronic component or the arrangement of multiple optoelectronic components may be assigned an illumination system which emits, for example, electromagnetic radiation having a wavelength to be detected, the detection of which is carried out by the optoelectronic component after reflection on or transmission through the sample to be examined.

[0023] One of the two electrodes of the optoelectronic component according to the invention is called the "first electrode" in the sense of the present invention and is configured so that illumination of the optoelectronic component can occur through this electrode, e.g., the first electrode is configured to be transparent at least to the wavelength to be detected.

[0024] If the first electrode has a reflective surface that constitutes the mirror surface of the micro-optical resonator, the first electrode may be configured to be semi-transparent at least in the wavelength range to be detected, such that radiation at least in the wavelength range to be detected can be transmitted through the first electrode but is also reflected by the reflective surface of the electrode.

[0025] Depending on the illumination direction and configuration of the optoelectronic component, the first electrode may be the bottom electrode, i.e. the electrode located closest to the substrate, or the top electrode, i.e. the electrode further away from the substrate.

[0026] The first and second electrodes may consist of a layer system formed from several individual layers arranged one above the other. For example, one or both electrodes may have a layer to improve the nucleation behavior of the mirror layer and / or the adjacent layer.

[0027] An optoelectronic component according to the invention can be connected to a reading unit for reading, and preferably further processing, the electrical signals generated by the optoelectronic component.

[0028] The optoelectronic component according to the present invention can be disposed on a substrate which can be rigid, partially flexible or flexible. It is desirable to make the substrate transparent at least to the wavelength to be detected so that the optoelectronic component can be illuminated through the substrate depending on the direction from which the optoelectronic component is illuminated.

[0029] An advantage of the optoelectronic component according to the invention is that the aperture mask in the form of at least one radiation-blocking layer does not need to be placed and aligned externally to the optoelectronic component, but instead is inseparably integrated with the optoelectronic component as an integral part of the stack, and therefore no post-processing effort is involved by additionally placing an aperture mask on the stack of the optoelectronic component, e.g., on the encapsulation of the optoelectronic component.

[0030] A further advantage of the present invention is that the radiation coupling layer, disposed between the first electrode of the photodetector and the radiation blocking layer and electrically insulating the first electrode and the radiation blocking layer from each other, affects the distribution and amplitude of the optical field in the photoactive layer, thereby increasing the optical signal. Furthermore, the external reflection of the first electrode can be reduced by the radiation coupling layer.

[0031] Suitable materials for the radiation coupling layer are those that have as high a transparency as possible in the wavelength range to be detected and have a refractive index suitable for increasing the optical signal, such as Alq3 (tris(8-hydroxyquinoline)aluminum(III)), BF-DPB (N,N'-bis(9,9-dimethyl-9H-fluoren-2-yl)-N,N'-diphenylbenzidine), C 60 The organic semiconductor materials include, but are not limited to, the following.

[0032] The at least one radiation blocking layer preferably consists of a metallic material, particularly preferably aluminum. Alternatively, the at least one radiation blocking layer preferably consists of a dielectric mirror material.

[0033] Preferably, the radiation-blocking layer protrudes, typically by several hundred microns, for example 250 microns, from the portion of the edge region of the photodetector that it covers into the selected area of ​​the photodetector, i.e., without reducing the size of the selected area by more than 30%, preferably by more than 20%, and particularly preferably by more than 10%.

[0034] Preferably, the radiation coupling layer protrudes over the at least one radiation blocking layer, typically by a few hundred microns, for example 250 microns.

[0035] The photodetector may include an additional layer disposed between the two electrodes of the photodetector. Preferably, the photodetector has an additional charge carrier transport layer, such as a hole transport layer (HTL) disposed between the photoactive layer and a hole collecting electrode, typically the upper electrode, and / or an electron transport layer (ETL) disposed between the photoactive layer and an electron collecting electrode, typically the lower electrode. To improve transport properties, the ETL is often n-doped, and the HTL is p-doped. To improve charge carrier extraction from the photoactive layer, an undoped transport layer can be inserted between the photoactive layer and the doped transport layer.

[0036] The optoelectronic component may have an encapsulation to reduce the influence of harmful environmental influences. The layer structure of the optoelectronic component is sealed against the environment by the encapsulation and the substrate. The entire layer structure of the optoelectronic component according to the invention is arranged within the encapsulation.

[0037] In addition to what has already been described, the optoelectronic component according to the invention may also comprise further layers, for example optically transparent spacer layers.

[0038] There are two main configurations for arranging the layer structure of the optoelectronic component according to the invention, which essentially depend on the direction of irradiation of the incident electromagnetic radiation.

[0039] In a "bottom illumination" configuration, illumination of the optoelectronic component occurs through the substrate and the lower electrode. At least one radiation-blocking layer may be deposited, e.g., vapor-deposited, directly on the substrate, e.g., made of glass or plastic. In this case, deposition occurs only at the location where at least a portion of the edge region of the photodetector will be formed, and not at the location where selected regions of the photodetector are located, within the alignment accuracy of the deposition mask. This is followed by deposition of a radiation-coupling layer, which occurs both on the radiation-blocking layer and on the substrate. Then, at least a semitransparent first electrode (here, the lower electrode) and further layers of the photodetector are deposited, and finally, a second electrode (here, the upper electrode), which may be opaque in the wavelength range to be detected, is deposited.

[0040] In a "top illumination" configuration, where incoming electromagnetic radiation reaches the photodetector through the top electrode, the optoelectronic component layers are deposited in opposite positions relative to the illumination direction. First, the photodetector's second electrode (here, the bottom electrode) is deposited on the substrate, and the remaining layers of the photodetector are deposited on the second electrode, terminating in an at least semi-transparent first electrode (here, the top electrode). A radiation coupling layer is disposed on top of this first electrode, covering selected areas and edge regions of the photodetector. In the edge regions of the photodetector, a radiation blocking layer is disposed on the radiation coupling layer. Because illumination is not through the substrate but instead through the top electrode, the substrate, like the bottom electrode, can be opaque in the wavelength range to be detected.

[0041] Multiple optoelectronic components according to the present invention can be combined to form, for example, a grid-like arrangement, a linear arrangement, or any other configuration. Preferably, the optoelectronic components in the arrangement according to the present invention differ from one another in terms of the wavelength to be detected, i.e., the components are optimized to detect different wavelength ranges. Preferably, multiple optoelectronic components are arranged on the same substrate. In such an arrangement, a radiation coupling layer may cover the sensitive regions of multiple photodetectors. Similarly, at least one radiation blocking layer may cover the edge regions of multiple photodetectors. For example, multiple radiation blocking layers may be deposited on the radiation coupling layer or on the substrate, laterally offset from one another. In this case, a first radiation blocking layer may cover, for example, a first portion of the edge regions of multiple photodetectors, and a second radiation blocking layer arranged laterally offset from the first radiation blocking layer may cover a second portion of the edge regions of multiple identical photodetectors.

[0042] During the manufacture of the optoelectronic component according to the invention, the radiation coupling layer and the radiation blocking layer are inseparably bonded to one another by a coating method, for example thermal evaporation, followed by encapsulation of the optoelectronic component.

[0043] The optoelectronic component according to the invention or the arrangement of optoelectronic components according to the invention is preferably used for detecting electromagnetic radiation in the visible and near-infrared wavelength range (wavelengths between 380 and 3000 nm).

[0044] The invention will now be described by way of example only and with reference to the drawings in which: [Brief explanation of the drawings]

[0045] [Figure 1] FIG. 1 is a schematic side view of a stack of optoelectronic components illuminated through a substrate and a bottom electrode (bottom lighting) according to the present invention. [Figure 2] FIG. 2 is a schematic side view of an optoelectronic component stack illuminated through the top electrode (top illumination) according to the present invention. [Figure 3]FIG. 3 is a schematic plan view of a grid-like arrangement of four optoelectronic components according to the present invention. [Figure 4a] FIG. 4 is a comparison of EQE measurements for a first grid-like arrangement of 16 optoelectronic components according to the present invention with different wavelengths to be detected, without a radiation coupling layer, and without an integrated aperture mask. [Figure 4b] FIG. 4 is a comparison of EQE measurements for a first grid-like arrangement of 16 optoelectronic components according to the present invention with different wavelengths to be detected, with a radiation coupling layer, and with an integrated aperture mask. [Figure 5a] FIG. 5 is a comparison of EQE measurements for a second grid arrangement of 16 optoelectronic components according to the present invention with different wavelengths to be detected, with a radiation coupling layer and without an integrated aperture mask. [Figure 5b] FIG. 5 is a comparison of EQE measurements for a second grid-like arrangement of 16 optoelectronic components according to the present invention with different wavelengths to be detected, with a radiation coupling layer, and with an integrated aperture mask. DETAILED DESCRIPTION OF THE INVENTION

[0046] 1 shows a side view of an optoelectronic component 1 with bottom illumination. The optoelectronic component 1 is configured as a stack. Illumination of the optoelectronic component 1 takes place through the substrate 2 in the illumination direction 100 using an illumination source (not shown) after interaction with a sample to be inspected (not shown). The substrate 2 may be, for example, a glass substrate or a plastic substrate or a silicon substrate and is therefore configured to be transparent to electromagnetic radiation incident on the optoelectronic component 1 having a wavelength to be detected, for example a wavelength in the near-infrared region of the electromagnetic spectrum.

[0047] Two radiation-blocking metal layers 3, made of aluminum, each having a thickness of, for example, 200 nm, are deposited on each region of the substrate 2, laterally offset. Between the radiation-blocking layers 3 and the photodetector 5, a radiation-coupling layer 4 is disposed, which is made of an organic semiconductor material, for example, the electron transport material C60 and typically has a thickness of the order of 100 nm, for example 200 nm or 500 nm. The photodetector 5 comprises a first electrode 51 (bottom electrode, electron collecting) and a second electrode 52 (top electrode, hole collecting), between which, in order in the illumination direction 100, are arranged an electron transport layer (ETL) 53, a photoactive layer 54, and a hole transport layer (HTL) 55. The sensitive area 501 of the photodetector 5 is aligned perpendicular to the plane of the drawing and is divided into a selected area 502 and an edge area 503 surrounding the selected area 502. In this case, the radiation-blocking layer 3 is disposed on at least a part of the edge area 503 and overlaps this edge area only so as to avoid covering the selected area 502, within the limits of deposition accuracy. The edge region 503 may also be only partially covered by the radiation-blocking layer 3, i.e. only a part of the edge region 503 may be covered, while other parts of the edge region may not be covered, in particular those parts which are, for example, located in front of the electrodes and therefore cause only slight artifacts in the optical signal. In contrast, the radiation coupling layer 4 covers at least the entire sensitive region 501 and overlaps this sensitive region 501 on all sides.

[0048] In the wavelength range to be detected, the radiation-blocking layer 3 has a reflectivity of at least 80%, particularly preferably at least 90%, very particularly preferably at least 95%, so that a large portion of the electromagnetic radiation impinging on the region of the optoelectronic component 1 on which the radiation-blocking layer 3 is arranged is reflected and therefore does not impinge on layers arranged after the radiation-blocking layer 3, in particular does not impinge on the photoactive layer 54.

[0049] In the optoelectronic component 1' shown in FIG. 2, the top electrode acts as the first electrode 51 and the bottom electrode acts as the second electrode 52; i.e., the optoelectronic component 1' is illuminated in the illumination direction 100 through the top electrode 51. The radiation coupling layer 4 is deposited on the top electrode 51 and covers at least the entire photosensitive region 501. The radiation coupling layer 4 may include, for example, a hole transport material BF-DPB. The photoactive layer 54 is disposed between the two electrodes 51, 52 of the photodetector 5. The photodetector 5 includes a hole transport layer (HTL) 55 between the photoactive layer 54 and the top electrode 55 for collecting holes, and an electron transport layer (ETL) 53 between the bottom electrode 52 for collecting electrons and the photoactive layer 54. The two radiation-blocking layers 3 are arranged laterally offset on the radiation-coupling layer 4, covering only two portions of the edge regions 503 of the photodetector 5 and slightly protruding laterally beyond them, but not within the limits of deposition accuracy towards the selected regions 502. Thus, the photoactive layer 54 is only illuminated below the selected regions 502 and not below the edge regions 503.

[0050] An optoelectronic component according to the invention with top illumination may, for example, comprise the following sequence of layers of specified thickness (arranged opposite to the illumination direction): Substrate (1.1 mm glass) - Opaque bottom electrode with a mirror surface (3 nm MoO3-1 nm Au-100 nm Ag) - ETL (50 nm n-doped C 60 -Photoactive layer (300nm C 60 ZnPc) - HTL (50 nm p-doped MeO-TPD) - partially transparent top electrode (3 nm MoO-1 nm Au-20 nm Ag) - radiation coupling layer (200 nm C 60 )-Radiation blocking layer (200nm Al) may have

[0051] After the deposition is complete, the layer sequence is sealed from the environment by a cover glass in an inert atmosphere.

[0052] 3 is a plan view in the illumination direction (z-direction into the plane of the figure) of a 2×2 arrangement 10 of four photodetectors 5a, 5b, 5c, 5d with top illumination on the same substrate 2. The sensitive areas 501 of all four photodetectors 5a, 5b, 5c, 5d are completely covered by a common radiation coupling layer 4 that protrudes laterally across the four photodetectors 5a, 5b, 5c, 5d in all directions (x, -x, y, -y). The sensitive area 501 of each photodetector 5a, 5b, 5c, 5d is divided into a selected area 502 and a frame-like edge area 503 that surrounds the selected area 502, as shown for example for the photodetector 5b in the upper right corner. Three radiation-blocking layers 3a, 3b, 3c are disposed on the common radiation coupling layer 4. The radiation-blocking layer 3a covers first portions extending in the x direction of the edge regions 503 of two photodetectors 5a and 5b, which are arranged laterally offset from one another in the x direction, and protrudes beyond said portions in the x, -x, and -y directions, so that, within the deposition accuracy, selected regions 502 of the photodetectors 5a and 5b are not covered but rather are fully illuminated. The radiation-blocking layer 3c covers first portions extending in the x direction of the edge regions 503 of two photodetectors 5c and 5d, which are arranged laterally offset from one another in the x direction, and protrudes beyond said portions in the x, -x, and y directions, so that, within the deposition accuracy, selected regions 502 of the photodetectors 5c and 5d are not covered but rather are fully illuminated. The radiation-blocking layer 3b covers a second portion of the edge region 503 of all photodetectors 5a, 5b, 5c, 5d extending in the x direction and protruding beyond said portion in the x and -x directions, and in the y direction for photodetectors 5c, 5d and in the -y direction for photodetectors 5a, 5b, but does not cover selected regions 502 of photodetectors 5a, 5b, 5c, 5d within the limits of deposition accuracy. The portion of the edge region 503 of photodetectors 5a, 5b, 5c, 5d extending in the y direction is not covered by the radiation-blocking layer in Figure 3 because the top electrode is at least partially located in front of this portion, so that the portion extending in the y direction is not covered by the top electrode and causes significantly fewer artifacts than the portion of the edge region extending in the x direction. It is understood that covering this portion of the edge region 503 is also in line with the idea of ​​the present invention.

[0053] 4a and 4b show measurements of the EQE as a function of wavelength for a first grid-like arrangement of 16 optoelectronic components, each optimized for a different wavelength to be detected, i.e., the EQE reaches a maximum value at a different wavelength for each optoelectronic component, i.e., a total of 16 different wavelengths shown in the two figures. In this case, FIG. 4a shows the EQE measurement for an arrangement without a radiation coupling layer and without a radiation blocking layer, i.e., without an integrated aperture mask. FIG. 4b shows the EQE measurement for the same arrangement with a radiation coupling layer that completely covers the sensitive area of ​​each of the 16 photodetectors of the associated optoelectronic component, and multiple radiation blocking layers that each cover a portion of the edge area of ​​the multiple photodetectors of the associated optoelectronic component. Comparing FIG. 4a and FIG. 4b shows that the EQE maximum value for all optoelectronic components is higher in FIG. 4b than in FIG. 4a, which can be interpreted as the effect of the radiation coupling layer. In this case, the increase is 7% for optoelectronic components designed for wavelengths lower than the wavelength to be detected, and 40% for optoelectronic components designed for wavelengths higher than the wavelength to be detected. On the other hand, this comparison shows that the artifacts seen in Figure 4a in the EQE curve for low wavelengths are mitigated by an integrated aperture mask as in Figure 4b.

[0054] This effect can be seen more clearly when comparing Figures 5a and 5b. The two figures show measurements of the EQE as a function of wavelength for a second grid-like arrangement of 16 optoelectronic components, each optimized for a different wavelength to be detected. The EQE reaches its maximum value at a different wavelength for each optoelectronic component, a total of 16 different wavelengths shown in the two figures. In the arrangement of Figure 5a, a common radiation-coupling layer completely covers the sensitive areas of all 16 photodetectors of the associated optoelectronic components. In Figure 5b, additional radiation-blocking layers are arranged on the radiation-coupling layer so that the edge areas of all 16 photodetectors of the associated optoelectronic components are partially covered. The measurement shown in Figure 5b shows a significant reduction in the EQE at low wavelengths. Therefore, the shoulder at low wavelengths seen in Figure 5a, caused by the nonuniformity of the layer thickness in the edge areas, can be significantly reduced by using an integrated aperture mask, as seen in Figure 5b. [Explanation of symbols]

[0055] 1 Optoelectronic components (bottom lighting) 1' Optoelectronic components (top lighting) 10 Arrangement of multiple optoelectronic components 100 lighting directions 2 boards 3, 3a, 3b, 3c radiation blocking layer 4 Radiation Bonding Layer 5, 5a, 5b, 5c Photodetectors 501 Photodetector sensitive area 502 Photodetector selection area 503 Photodetector edge region 51 First electrode 52 Second electrode 53 Electron transport layer (ETL) 54 Photoactive layer 55 Hole transport layer (HTL)

Claims

1. An optoelectronic component (1, 1') comprising a photodetector (5) having a sensitive region (501) formed of a selected region (502) and an edge region (503) surrounding the selected region (502), The photodetector (5) comprises at least one photoactive layer (54) between two electrodes (51, 52) spaced apart from each other; a first electrode (51) arranged in front of the second electrode (52) in the illumination direction (100) that is at least semi-transparent to electromagnetic radiation having a wavelength to be detected; In the optoelectronic component (1, 1'), At least one radiation coupling layer (4) is arranged in front of the photodetector (5), the radiation coupling layer (4) completely covering the sensitive area (501) of the photodetector (5); At least one radiation blocking layer (3) is disposed in front of the at least one radiation coupling layer (4) and bonded to the radiation coupling layer (4) in a material-to-material manner, and the radiation blocking layer (3) covers at least a portion of the edge region (503) of the photodetector (5) and shields up to 30% of a selected region (502) of the photodetector (5) from electromagnetic radiation having a wavelength to be detected. An optoelectronic component (1, 1') characterized in that:

2. 2. Optoelectronic component (1, 1') according to claim 1, characterized in that the radiation blocking layer (3) is inseparably joined to the radiation coupling layer (4) by a coating method.

3. Optoelectronic component (1, 1') according to claim 1 or 2, characterized in that the at least one radiation blocking layer (3) comprises a dielectric material.

4. Optoelectronic component (1, 1') according to claim 1 or 2, characterized in that the at least one radiation blocking layer (3) comprises a metal.

5. Optoelectronic component (1, 1') according to any one of claims 1 to 4, characterized in that the at least one radiation coupling layer (4) comprises an organic semiconducting material.

6. An optoelectronic component (1, 1') according to any one of claims 1 to 5, characterized in that the optoelectronic component (1, 1') is hermetically sealed against the environment by encapsulation.

7. An optoelectronic component (1, 1') according to any one of claims 1 to 6, characterized in that the radiation blocking layer (3) covers no more than 20%, preferably no more than 10%, of the selected area (502) of the optoelectronic component (1, 1').

8. An arrangement (10) of at least two laterally offset optoelectronic components (1, 1') according to any one of claims 1 to 7, each comprising at least one photodetector (5a, 5b, 5c, 5d) on the same substrate (2), comprising: the radiation coupling layer (4) completely covers the sensitive areas (501) of the at least two photodetectors (5a, 5b, 5c, 5d) of the optoelectronic components (1, 1') associated with the arrangement (10); and An arrangement (10), in which a radiation blocking layer (3) covers part of the edge area (503) of at least two of said photodetectors (5a, 5b, 5c, 5d) of said optoelectronic component (1, 1') associated with said arrangement (10).

9. A method for manufacturing an optoelectronic component (1, 1') according to any one of claims 2 to 7, comprising the steps of:

10. A method according to claim 9, wherein said at least one radiation blocking layer (3) and said at least one radiation coupling layer (4) are inseparably bonded to each other by a coating method.

10. Use of an optoelectronic component (1, 1') according to any one of claims 1 to 7 or an arrangement (10) according to claim 8 for detecting electromagnetic radiation having wavelengths in the visible and / or near infrared range.

Images