Perovskite solar cells, their manufacturing method, and power consumption devices

Abstract

The present invention discloses a perovskite solar cell, a manufacturing method thereof, and a power consumption device, the perovskite solar cell including a perovskite light-absorbing layer, an electron transport layer, and a resistance-reducing layer located between the perovskite light-absorbing layer and the electron transport layer, whereby the resistance-reducing layer can reduce the residual Schottky barrier between the interfaces of both the perovskite light-absorbing layer and the electron transport layer, reduce the contact resistance between the perovskite light-absorbing layer and the electron transport layer, and increase the fill factor of the perovskite solar cell device.

Description

[Technical Field]

[0001] The present invention relates to the field of solar cell technology, and more particularly to a perovskite solar cell, its manufacturing method, and a power consuming device. [Background technology]

[0002] Perovskite solar cells are a new solar cell technology that has been booming in recent years. Perovskite solar cells are solar cells that use perovskite-type organometal halide semiconductors as light-absorbing materials. They belong to the third generation of solar cells and are also known as new concept solar cells. In recent years, perovskite solar cells have attracted attention due to the abundant reserves of the necessary raw materials, the simple manufacturing process, and the fact that they can achieve record-breaking high efficiency using a low-temperature, low-cost process.

[0003] Since the contact resistance between film layers in perovskite solar cells directly affects the fill factor of the device, it would be of great significance to develop perovskite solar cells that can reduce the interfacial contact resistance. Summary of the Invention

[0004] In view of this, the present invention provides a perovskite solar cell, which includes a perovskite light-absorbing layer, an electron transport layer, and a resistance-reducing layer located between the perovskite light-absorbing layer and the electron transport layer, whereby the resistance-reducing layer can reduce the residual Schottky barrier between the interfaces of both the perovskite light-absorbing layer and the electron transport layer, reduce the contact resistance between the perovskite light-absorbing layer and the electron transport layer, and increase the fill factor of the perovskite solar cell device.

[0005] According to an embodiment of the present invention, the material forming the resistance-reducing layer includes at least one of a metal sulfide, a metalloid sulfide, and a sulfur-containing organic compound, which can effectively reduce the contact resistance between the perovskite light-absorbing layer and the electron transport layer and improve the fill factor of the perovskite solar cell device.

[0006] According to an embodiment of the present invention, the material forming the resistance-reducing layer includes at least one of lithium sulfide, potassium sulfide, magnesium sulfide, arsenic sulfide, indium sulfide, manganese sulfide, and cobalt sulfide, which can effectively improve the performance of the perovskite solar cell.

[0007] According to an embodiment of the present invention, the thickness of the resistance-reducing layer is 3 nm or less, which can effectively reduce the contact resistance between the perovskite light-absorbing layer and the electron transport layer, and effectively improve the fill factor of the perovskite solar cell device.

[0008] According to an embodiment of the present invention, the thickness of the resistance-reducing layer is 1-3 nm, which can effectively reduce the residual Schottky barrier between the interfaces of both the perovskite light-absorbing layer and the electron-transporting layer, and improve the fill factor of the perovskite solar cell device.

[0009] According to an embodiment of the present invention, the perovskite solar cell further includes a back electrode layer, a transparent electrode layer, and a hole transport layer, thereby further improving the performance of the perovskite solar cell.

[0010] According to an embodiment of the present invention, the transparent electrode layer is located on the electron transport layer away from the resistance-reducing layer, the hole transport layer is located on the perovskite light-absorbing layer away from the resistance-reducing layer, and the back electrode layer is located on the hole transport layer away from the perovskite light-absorbing layer. Thus, the perovskite solar cell has a structure in which the transparent electrode layer, the electron transport layer, the resistance-reducing layer, the perovskite light-absorbing layer, the hole transport layer, and the back electrode layer are stacked, i.e., the perovskite solar cell of the present invention may have a forward device structure.

[0011] According to an embodiment of the present invention, the hole transport layer is located on the side of the perovskite light-absorbing layer away from the resistance-reducing layer, the transparent electrode layer is located on the side of the hole transport layer away from the perovskite light-absorbing layer, and the back electrode layer is located on the side of the electron transport layer away from the resistance-reducing layer. Thus, the perovskite solar cell has a structure in which the transparent electrode layer, the hole transport layer, the perovskite light-absorbing layer, the resistance-reducing layer, the electron transport layer, and the back electrode layer are stacked, i.e., the perovskite solar cell of the present invention may have an inverted device structure.

[0012] According to an embodiment of the present invention, in the perovskite solar cell, a material forming the transparent electrode layer includes at least one of FTO, ITO, AZO, BZO, and IZO; a chemical formula of a material forming the perovskite light-absorbing layer is ABX3 or A2CDX6, in which A is at least one of a methylamino group, a formamidine group, a cesium ion, and a rubidium ion; B is at least one of a divalent lead ion and a divalent tin ion; C is a monovalent silver ion; D is a trivalent bismuth ion; and X is at least one of a chloride ion, a bromine ion, and an iodine ion; a band gap of the perovskite light-absorbing layer is 1.20 to 2.30 eV; a thickness of the perovskite light-absorbing layer is 200 to 1000 nm; and a material forming the electron transport layer is [6,6]-phenyl C 61 Methyl butyrate and [6,6]-phenyl C 71The hole transport layer may include at least one of methyl butyrate, fullerene C60, fullerene C70, tin dioxide, and zinc oxide, and the material forming the hole transport layer may be selected from the group consisting of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, poly-3-hexylthiophene, triptycene-cored triphenylamine, 3,4-ethylenedioxythiophene-methoxy The back electrode layer contains at least one of the following: 1) a bis(triphenylamine), 2) N-(4-aniline)carbazole-spirobifluorene, 3) poly(3,4-ethylenedioxythiophene), 4) poly(styrenesulfonyl), 5) nickel oxide, 6) molybdenum oxide, 7) cuprous iodide, and 8) copper oxide; 9) a material for forming the back electrode layer contains at least one of Ag, Cu, C, Au, Al, ITO, AZO, BZO, and IZO. This further improves the performance of the perovskite solar cell.

[0013] The present invention further provides a method for fabricating the above-described perovskite solar cell, which includes forming a resistance-reducing layer between the perovskite light-absorbing layer and the electron-transporting layer by vapor deposition. This method thereby has all the features and advantages of the above-described perovskite solar cell, and will not be further described here. Overall, the perovskite solar cell device fabricated by this method has a relatively high fill factor, and the method also has the advantage of being simple to operate.

[0014] According to an embodiment of the present invention, the deposition rate is 0.005 to 0.03 A / s, thereby making it possible to obtain a resistance-reducing layer having a dense structure.

[0015] According to an embodiment of the present invention, after the deposition is completed, the method further includes evacuating the chamber, and the evacuating time is 20-40 minutes, which can provide the obtained perovskite solar cell with better performance.

[0016] According to an embodiment of the present invention, the method includes providing a transparent electrode layer, forming an electron transport layer on one side of the transparent electrode layer, forming a resistance reducing layer on a side of the electron transport layer remote from the transparent electrode layer, forming a perovskite light absorbing layer on a side of the resistance reducing layer remote from the electron transport layer, forming a hole transport layer on a side of the perovskite light absorbing layer remote from the resistance reducing layer, and forming a back electrode layer on a side of the hole transport layer remote from the perovskite light absorbing layer, thereby producing and obtaining a perovskite solar cell with a forward structure.

[0017] According to an embodiment of the present invention, the method includes providing a transparent electrode layer, forming a hole transport layer on one side of the transparent electrode layer, forming a perovskite light absorbing layer on a side of the hole transport layer remote from the transparent electrode layer, forming a resistance reducing layer on a side of the perovskite light absorbing layer remote from the hole transport layer, forming an electron transport layer on a side of the resistance reducing layer remote from the perovskite light absorbing layer, and forming a back electrode layer on a side of the electron transport layer remote from the resistance reducing layer, thereby producing and obtaining a perovskite solar cell with an inverted structure.

[0018] The present invention further provides a power consuming device, which includes the perovskite solar cell described above. This power consuming device thereby has all the features and advantages of the perovskite solar cell described above, which will not be further described herein. Overall, the perovskite solar cell in this power consuming device has excellent performance. [Brief explanation of the drawings]

[0019] [Figure 1] FIG. 1 is a structural schematic diagram of a perovskite solar cell in one embodiment of the present invention. [Figure 2] FIG. 2 is a structural schematic diagram of a perovskite solar cell in another embodiment of the present invention. [Figure 3] FIG. 2 is a structural schematic diagram of a perovskite solar cell in another embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0020] The present invention will be explained in conjunction with the following examples. Those skilled in the art will understand that the following examples are used only to illustrate the present invention and should not be considered to limit the scope of the present invention. If specific techniques or conditions are not specified in the examples, they will be carried out in accordance with the techniques or conditions described in literature in the art or in accordance with the product instructions. If the manufacturer of the reagents or instruments used is not specified, they are all common commercially available products.

[0021] The present invention provides a perovskite solar cell. Referring to Figure 1, the perovskite solar cell includes a perovskite light-absorbing layer 100, an electron transport layer 300, and a resistance-reducing layer 200 located between the perovskite light-absorbing layer 100 and the electron transport layer 300. The resistance-reducing layer 200 reduces the residual Schottky barrier between the interfaces of the perovskite light-absorbing layer 100 and the electron transport layer 300, reducing the contact resistance between the perovskite light-absorbing layer 100 and the electron transport layer 300 and improving the fill factor of the perovskite solar cell device. The resistance-reducing layer 200 can also reduce interface defect states and reduce non-radiative recombination, thereby improving the efficiency and batch stability of the device.

[0022] For ease of understanding, the principles by which the perovskite solar cell of the present application can achieve the above-mentioned beneficial effects will be briefly explained below.

[0023] As mentioned above, the contact resistance between each film layer of a battery affects the device's fill factor, preventing the battery's performance from being fully enhanced. In the related art, this problem can be solved by forming a passivation layer between the perovskite light-absorbing layer and the hole-transporting layer. Specifically, in the related art, after the perovskite is produced by a solution method, an upper passivation layer is formed on top of it, which increases the interfacial contact mass, makes the interfacial contact tighter, reduces defects, improves device efficiency, and alleviates stability to a certain extent. However, this method requires heat treatment during the production process to obtain the passivation layer. During the heat treatment, some of the passivation layer material may be thermally decomposed. This method has problems of poor reproducibility and relatively poor device batch stability. The present application provides a resistance-reducing layer (RRL) between the perovskite light-absorbing layer and the electron transport layer, allowing for precise control of the thickness and density of the sulfide using deposition equipment, passivating interface defect states and reducing non-radiative recombination while further improving device batch stability. The RRL material optimizes the interface between the electron transport layer and the perovskite light-absorbing layer, increasing the interface contact area, reducing interface defect states, and reducing the residual Schottky barrier between the electron transport layer and the perovskite light-absorbing layer, thereby reducing contact resistance and improving the carrier transport capacity therebetween. Furthermore, a RRL with a specific thickness can also be formed by methods including, but not limited to, deposition, which allows for control of the specific thickness and improves device reproducibility.

[0024] According to an embodiment of the present invention, the material forming the resistance-reducing layer 200 includes at least one of a metal sulfide, a metalloid sulfide, and a sulfur-containing organic compound, thereby enabling the resistance-reducing layer 200 to effectively reduce the contact resistance between the perovskite light-absorbing layer 100 and the electron transport layer 300. Specifically, uncoordinated lead exists in the perovskite light-absorbing layer 100, and the sulfur in the resistance-reducing layer 200 interacts with the uncoordinated lead in the perovskite light-absorbing layer 100 to form a chemical bond between the sulfur and lead, thereby reducing interfacial defect states and reducing the contact resistance.

[0025] Here, metal sulfides include, but are not limited to, alkali metal sulfides, alkaline earth metal sulfides, and transition metal sulfides.

[0026] Metalloid sulfides are compounds formed by metalloids and sulfur, where the physical and chemical properties of metalloids are between those of metals and nonmetals, and metalloids include boron, silicon, germanium, selenium, tellurium, polonium, arsenic, and antimony. Further, metalloid sulfides include boron sulfide, silicon sulfide, germanium sulfide, selenium sulfide, tellurium sulfide, polonium sulfide, arsenic sulfide, and antimony sulfide.

[0027] The sulfur-containing organic compound is an organic compound substituted with one, two, or more sulfur-containing functional groups. Specifically, the sulfur-containing organic compound is an aliphatic hydrocarbon compound or an aromatic hydrocarbon compound substituted with one, two, or more mercapto groups (-SH) or sulfonic acid groups (-SOH). For example, sulfur-containing compounds include, but are not limited to, butylsulfonic acid and benzenesulfonic acid.

[0028] According to an embodiment of the present invention, the material forming the resistance-reducing layer 200 includes at least one of lithium sulfide, potassium sulfide, magnesium sulfide, arsenic sulfide, indium sulfide, manganese sulfide, and cobalt sulfide, which can effectively improve the performance of the perovskite solar cell.

[0029] According to an embodiment of the present invention, the thickness of the resistance-reducing layer 200 is 3 nm or less, which can effectively reduce the contact resistance between the perovskite light-absorbing layer 100 and the electron transport layer 300 and effectively increase the fill factor of the perovskite solar cell device. If the resistance-reducing layer 200 is too thick, it will block electron transport and reduce the performance of the perovskite solar cell.

[0030] According to some embodiments of the present invention, the resistance-reducing layer 200 may have a thickness of 1 to 3 nm, and more specifically, may be 1 nm, 1.5 nm, 2 nm, 2.5 nm, or 3 nm. A resistance-reducing layer 200 having a thickness within the above range can be formed relatively easily by methods including, but not limited to, vapor deposition, and is neither too thin to form a continuous film layer nor too thick to block carrier transport at the interface, increase contact resistance, or reduce the fill factor.

[0031] According to an embodiment of the present invention, the perovskite solar cell further includes a back electrode layer 600, a transparent electrode layer 500, and a hole transport layer 400, which can further improve the performance of the perovskite solar cell.

[0032] 2 , according to an embodiment of the present invention, the transparent electrode layer 500 is located on the side of the electron transport layer 300 away from the resistance-reducing layer 200, the hole transport layer 400 is located on the side of the perovskite light-absorbing layer 100 away from the resistance-reducing layer 200, and the back electrode layer 600 is located on the side of the hole transport layer 400 away from the perovskite light-absorbing layer 100. Thus, the perovskite solar cell has a stacked structure of the transparent electrode layer 500, the electron transport layer 300, the resistance-reducing layer 200, the perovskite light-absorbing layer 100, the hole transport layer 400, and the back electrode layer 600. That is, the perovskite solar cell of the present invention may have a forward device structure. For forward perovskite solar cells, the introduction of the resistance-reducing layer 200 not only reduces interfacial contact resistance, but also increases the bonding strength with lead in the perovskite precursor solution, improving perovskite crystal quality and device stability. Specifically, the perovskite precursor solution contains uncoordinated lead, which can interact with sulfur in the resistance reduction layer 200 to form a chemical bond between sulfur and lead, and the resistance reduction layer 200 and the perovskite light-absorbing layer 100 have a relatively large bond strength.

[0033] 3 , according to some other embodiments of the present invention, the hole transport layer 400 is located on the side of the perovskite light-absorbing layer 100 away from the resistance reduction layer 200, the transparent electrode layer 500 is located on the side of the hole transport layer 400 away from the perovskite light-absorbing layer 100, and the back electrode layer 600 is located on the side of the electron transport layer 300 away from the resistance reduction layer 200. Thus, the perovskite solar cell has a stacked structure of the transparent electrode layer 500, the hole transport layer 400, the perovskite light-absorbing layer 100, the resistance reduction layer 200, the electron transport layer 300, and the back electrode layer 600, i.e., the perovskite solar cell of the present invention may have an inverted device structure. In the case of an inverse perovskite solar cell, the resistance-reducing layer 200 not only reduces the interfacial contact resistance, but also functions as a protective layer for the electron transport layer 300, preventing the migrated ions from coming into direct contact with the back electrode layer 600, which could lead to unwanted ion migration.

[0034] According to an embodiment of the present invention, the material forming the transparent electrode layer 500 includes at least one of FTO, ITO, AZO, BZO, and IZO.

[0035] According to an embodiment of the present invention, the chemical formula of the material forming the perovskite light-absorbing layer 100 is ABX3 or A2CDX6, where A is a methylamino group (CH3NH3 + ) and formamidine group (HC(NH2)2 + ) and cesium ions (Cs + ) and rubidium ions (Rb + ) and B is at least one of divalent lead ions (Pb 2+ ) and divalent tin ions (Sn 2+ ) and C is at least one of monovalent silver ions (Ag + ) and D is a trivalent bismuth ion (Bi 3+ ) and X is a chloride ion (Cl - ) and bromide ions (Br - ) and iodine ion (I - ) and at least one of them.

[0036] According to an embodiment of the present invention, the band gap of the perovskite light absorbing layer 100 is 1.20 to 2.30 eV, for example, 1.20 eV, 1.30 eV, 1.40 eV, 1.50 eV, 1.60 eV, 1.70 eV, 1.80 eV, 1.90 eV, 2.00 eV, 2.10 eV, 2.20 eV, or 2.30 eV.

[0037] According to an embodiment of the present invention, the thickness of the perovskite light-absorbing layer 100 is 200 to 1000 nm, for example, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm; According to an embodiment of the present invention, the material forming the electron transport layer 300 is [6,6]-phenyl C 61 Methyl butyrate (PC 61 BM) and [6,6]-phenyl C 71 Methyl butyrate (PC 71 The electron transport layer 300 may include at least one of the following: fullerene C60 (C60), fullerene C70 (C70), tin dioxide (SnO2), and zinc oxide (ZnO). The material forming the electron transport layer 300 is not limited to the above materials, but may also be a derivative of the above materials or a material obtained by doping or passivating the derivative. The above materials are electron transport layer materials that are compatible with the electron energy level of perovskite and can ensure electron transport while blocking hole migration. The sulfide insertion layer can reduce contact resistance and enhance carrier mobility.

[0038] According to an embodiment of the present invention, the material forming the hole transport layer 400 may include at least one of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), 2,2′,7,7′-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9′-spirobifluorene (Spiro-OMeTAD), poly-3-hexylthiophene (P3HT), triptycene-cored triphenylamine (H101), 3,4-ethylenedioxythiophene-methoxytriphenylamine (EDOT-OMeTPA), N-(4-aniline)carbazole-spirobifluorene (CzPAF-SBF), poly(3,4-ethylenedioxythiophene), poly(styrenesulfonyl) (PEDOT:PSS), polythiophene, nickel oxide (NiOx), molybdenum oxide (MoO3), cuprous iodide (CuI), and cuprous oxide (CuO).

[0039] According to an embodiment of the present invention, the material forming the back electrode layer 600 includes at least one of Ag, Cu, C, Au, Al, ITO, AZO, BZO, and IZO.

[0040] The present invention further provides a method for fabricating the above-described perovskite solar cell, which includes forming a resistance-reducing layer 200 between a perovskite light-absorbing layer 100 and an electron-transporting layer 300 by vapor deposition. This method thereby has all the features and advantages of the above-described perovskite solar cell, and will not be further described here. Overall, the perovskite solar cell device fabricated by this method has a relatively high fill factor, and the method further has the advantage of being easy to operate.

[0041] By adjusting the deposition parameters, engineers can precisely control the thickness of the resistance reduction layer 200 produced, making it possible to make the thickness of the resistance reduction layer 200 3 nm or less. Specifically, by adjusting the deposition rate, the density of the resistance reduction layer 200 can be controlled. During deposition, the thickness of the resistance reduction layer 200 can be monitored in real time using a meter, and deposition is stopped when the resistance reduction layer 200 reaches a predetermined thickness.

[0042] In some specific embodiments of the present invention, the deposition rate may be 0.005 to 0.03 A / s, for example, 0.01 A / s, thereby making it possible to obtain the resistance reducing layer 200 having a dense structure.

[0043] When fabricating the resistance-reducing layer 200 by evaporation, the deposition rate is not stable at the beginning, so the initial 1 nm of deposition is omitted and subsequent deposition begins once the deposition rate has stabilized. Specifically, a shielding plate may be placed over the layer at the beginning of deposition, and the shielding plate may be removed after 1 nm of deposition. After the layer is deposited to the required thickness, the shielding plate may be covered.

[0044] In some embodiments of the present invention, when fabricating the resistance-reducing layer 200, after deposition is completed, the method further includes a step of evacuating the chamber, and subsequent operations are performed after the vacuuming. The vacuuming can remove residual materials from the chamber. The vacuuming time can be 20 to 40 minutes, for example, 30 minutes. This can provide the resulting perovskite solar cell with better performance.

[0045] According to an embodiment of the present invention, the method includes providing a transparent electrode layer 500, forming an electron transport layer 300 on one side of the transparent electrode layer 500, forming a resistance reducing layer 200 on a side of the electron transport layer 300 remote from the transparent electrode layer 500, forming a perovskite light absorbing layer 100 on a side of the resistance reducing layer 200 remote from the electron transport layer 300, forming a hole transport layer 400 on a side of the perovskite light absorbing layer 100 remote from the resistance reducing layer 200, and forming a back electrode layer 600 on a side of the hole transport layer 400 remote from the perovskite light absorbing layer 100. Thereby, a perovskite solar cell having a forward structure as shown in FIG. 2 can be manufactured and obtained.

[0046] According to some other embodiments of the present invention, the method includes providing a transparent electrode layer 500, forming a hole transport layer 400 on one side of the transparent electrode layer 500, forming a perovskite light-absorbing layer 100 on a side of the hole transport layer 400 remote from the transparent electrode layer 500, forming a resistance-reducing layer 200 on a side of the perovskite light-absorbing layer 100 remote from the hole transport layer 400, forming an electron transport layer 300 on a side of the resistance-reducing layer 200 remote from the perovskite light-absorbing layer 100, and forming a back electrode layer 600 on a side of the electron transport layer 300 remote from the resistance-reducing layer 200. Thereby, a perovskite solar cell having an inverted structure as shown in FIG. 3 can be manufactured and obtained.

[0047] The present invention further provides a power consuming device, which includes the perovskite solar cell described above. This power consuming device thereby has all the features and advantages of the perovskite solar cell described above, which will not be further described herein. Overall, the perovskite solar cell in this power consuming device has excellent performance.

[0048] Specifically, perovskite solar cells can be used as a power source to power power-consuming devices, including but not limited to electric vehicles, battery-powered vehicles, power toys, and power tools.

[0049] In the examples described below in this application, unless otherwise specified, all reagents used can be purchased from the market or can be prepared by the methods described in this application.

[0050] Example 1 As shown in Figure 1, in perovskite solar cells using lithium sulfide as a modification layer, the inverted perovskite solar cell structure consists of a transparent electrode layer, a hole transport layer, a perovskite light absorption layer, a metal sulfide resistance reduction layer, an electron transport layer, and a back electrode layer, which are arranged in this order.

[0051] 1) The 2.0*2.0cm ITO conductive glass was laser-etched on both ends to remove 0.35cm of ITO, exposing the glass substrate. 2) After etching with water, acetone, and isopropyl alcohol, the ITO conductive glass is ultrasonically cleaned several times in sequence. 3) ITO conductive glass is dried to remove the solvent under nitrogen gun, and then put into ultraviolet ozone equipment for further cleaning, 4) After the UV-ozone treatment, a 2 mg / mL PTAA organic hole transport layer was spin-coated on the ITO substrate at a rate of 5000 rpm / s, and then annealed on a hot stage at 100°C for 10 minutes. 5) The perovskite precursor solution is spin-coated on the hole transport layer at 1000 to 5000 rpm / s, annealed at 100°C for 30 minutes, and cooled to room temperature. The perovskite light absorption layer active material is FA 0.83 Cs 0.17 It is PbI3.

[0052] 6) The obtained sheet is placed in a deposition machine, and the deposition vacuum degree is 5*10 -4 After waiting for the pressure to drop below 1 Pa, a 1 nm layer of lithium sulfide was evaporated at a rate of 0.02 A / s, followed by a 30 nm layer of C60 electron transport layer at a rate of 0.05 A / s, and finally a 80 nm layer of Cu back electrode layer at a rate of 0.1 A / s. 7) The perovskite solar cell obtained through the above steps is designated as Cell 1.

[0053] Example 2 Except for step 6), the other steps are the same as in Example 1.

[0054] 6) depositing lithium sulfide to a thickness of 2 nm at a rate of 0.02 A / s, then depositing an electron transport layer C60 to a thickness of 30 nm at a rate of 0.05 A / s, and finally depositing a back electrode layer Cu to a thickness of 80 nm at a rate of 0.1 A / s; The perovskite solar cell obtained in this example is designated as Cell 2.

[0055] Example 3 Except for step 6), the other steps are the same as in Example 1.

[0056] 6) The obtained sheet is placed in a deposition machine, and the deposition vacuum degree is 5*10 -4 After waiting for the pressure to drop below 10 Pa, a 3 nm layer of lithium sulfide was evaporated at a rate of 0.02 A / s, followed by a 30 nm layer of C60 electron transport layer at a rate of 0.05 A / s, and finally a 80 nm layer of Cu back electrode layer at a rate of 0.1 A / s. The perovskite solar cell obtained in this example was designated as Cell 3.

[0057] Example 4 Except for step 6), the other steps are the same as in Example 1.

[0058] 6) The obtained sheet is placed in a deposition machine, and the deposition vacuum degree is 5*10 -4 After waiting for the pressure to drop below 1 Pa, a 1 nm thick potassium sulfide layer was evaporated at a rate of 0.02 A / s, followed by a 30 nm thick C60 electron transport layer at a rate of 0.05 A / s, and finally a 80 nm thick Cu back electrode layer at a rate of 0.1 A / s. The perovskite solar cell obtained in this example was designated as Cell 4.

[0059] Example 5 Except for step 6), the other steps are the same as in Example 1.

[0060] 6) Deposit magnesium sulfide to a thickness of 1 nm at a rate of 0.02 A / s, then deposit an electron transport layer C60 to a thickness of 30 nm at a rate of 0.05 A / s, and finally deposit a back electrode layer Cu to a thickness of 80 nm at a rate of 0.1 A / s; The perovskite solar cell obtained in this example was designated as Cell 5.

[0061] Example 6 Except for step 6), the other steps are the same as in Example 1.

[0062] 6) Deposit arsenic sulfide to a thickness of 1 nm at a rate of 0.02 A / s, then deposit an electron transport layer of C60 to a thickness of 30 nm at a rate of 0.05 A / s, and finally deposit a back electrode layer of Cu to a thickness of 80 nm at a rate of 0.1 A / s; The perovskite solar cell obtained in this example was designated as Cell 6.

[0063] Example 7 Except for step 6), the other steps are the same as in Example 1.

[0064] 6) Deposit a 1 nm thick indium sulfide layer at a rate of 0.02 A / s, then deposit a 30 nm thick electron transport layer of C60 at a rate of 0.05 A / s, and finally deposit a 80 nm thick back electrode layer of Cu at a rate of 0.1 A / s; The perovskite solar cell obtained in this example was designated as Cell 7.

[0065] Example 8 Except for step 6), the other steps are the same as in Example 1.

[0066] 6) Deposit manganese sulfide to a thickness of 1 nm at a rate of 0.02 A / s, then deposit an electron transport layer C60 to a thickness of 30 nm at a rate of 0.05 A / s, and finally deposit a back electrode layer Cu to a thickness of 80 nm at a rate of 0.1 A / s; The perovskite solar cell obtained in this example was designated as Cell 8.

[0067] Example 9 Except for step 6), the other steps are the same as in Example 1.

[0068] 6) Deposit a 1 nm thick layer of cobalt sulfide at a rate of 0.02 A / s, then deposit a 30 nm thick electron transport layer of C60 at a rate of 0.05 A / s, and finally deposit a 80 nm thick back electrode layer of Cu at a rate of 0.1 A / s; The perovskite solar cell obtained in this example was designated as Cell 9.

[0069] Example 10 Except for step 6), the other steps are the same as in Example 1.

[0070] 6) An organic passivation layer (PCBM, 1 mg / ml, solvent chlorobenzene, accelerated rotation speed 5000 rpm / s, spin coating time 30 s, annealed at 100 °C for 10 min) was spin-coated on the prepared perovskite film, and the obtained sheet was placed in a deposition machine. The deposition vacuum was 5*10 -4 After waiting for the pressure to drop below 1 Pa, a 30 nm electron transport layer of C60 was deposited at a rate of 0.05 A / s, and finally a 80 nm back electrode layer of Cu was deposited at a rate of 0.1 A / s. The perovskite solar cell obtained in this example was designated as cell 10.

[0071] Example 11 Except for step 6), the other steps are the same as in Example 1.

[0072] 6) The obtained sheet is placed in a deposition machine, and the deposition vacuum degree is 5*10 -4 After waiting for the pressure to drop below 1 Pa, first evaporate a 1 nm thick lithium fluoride layer at a rate of 0.02 A / s, then evaporate a 30 nm thick electron transport layer C60 at a rate of 0.05 A / s, and finally evaporate an 80 nm thick back electrode layer Cu at a rate of 0.1 A / s. The perovskite solar cell obtained in this example was designated as cell 11.

[0073] Comparative Example 1 1) The 2.0*2.0cm ITO conductive glass was laser-etched on both ends to remove 0.35cm of ITO, exposing the glass substrate. 2) After etching with water, acetone, and isopropyl alcohol, the ITO conductive glass is ultrasonically cleaned several times in sequence. 3) ITO conductive glass is dried to remove the solvent under nitrogen gun, and then put into ultraviolet ozone equipment for further cleaning, 4) After the UV-ozone treatment, a 2 mg / mL PTAA organic hole transport layer was spin-coated on the ITO substrate at a rate of 5000 rpm / s, and then annealed on a hot stage at 100°C for 10 minutes. 5) The perovskite precursor solution is spin-coated on the hole transport layer at 1000 to 5000 rpm / s, annealed at 100°C for 30 minutes, and cooled to room temperature. The perovskite light absorption layer active material is FA 0.83 Cs 0.17 It is PbI3.

[0074] 6) The obtained sheet is placed in a deposition machine, and the deposition vacuum degree is 5*10 -4 After waiting for the pressure to drop below 1 Pa, a 30 nm electron transport layer of C60 was deposited at a rate of 0.05 A / s, and finally a 80 nm back electrode layer of Cu was deposited at a rate of 0.1 A / s. 7) The perovskite solar cell obtained through the above steps is designated as cell 12.

[0075] Testing Methodology 1. Contact resistance of perovskite solar cells Standard simulated sunlight (AM 1.5G, 100 mW / cm 2 ) Under illumination, the cell performance was tested, the IV curve was obtained, and the computer automatically read the contact resistance value based on the data.

[0076] 2. Photoelectric conversion efficiency of perovskite solar cells Standard simulated sunlight (AM 1.5G, 100 mW / cm 2 The battery performance was tested under irradiation and the IV curve was obtained. The short circuit current Jsc (unit: mA / cm) was calculated based on the IV curve and the data fed back from the test equipment. 2 ), open circuit voltage Voc (unit: V), maximum optical output current Jmpp (unit: mA), and maximum optical output voltage Vmpp (unit: V) can be obtained. The fill factor FF of the battery was calculated using the formula FF = Jsc × Voc / (Jmpp × Vmpp) in units of %, and the photoelectric conversion efficiency PCE of the battery was calculated using the formula PCE = Jsc × Voc × FF / Pw in units of %, where Pw represents the input power in units of mW.

[0077] The perovskite solar cells obtained in the above examples and comparative examples were tested according to the above procedures. See Table 1 for specific values.

[0078] [Table 1]

[0079] As can be seen from Table 1, the contact resistances of Examples 1 to 11 were lower than that of Comparative Example 1. This indicates that providing a resistance-reducing layer between the perovskite light-absorbing layer and the electron transport layer reduces contact resistance, increases the fill factor of the perovskite solar cell device, and provides superior performance to the perovskite solar cell. The overall performance of the cells of Examples 1 to 9 was superior to that of the cells of Examples 10 and 11. This means that using sulfides as resistance-reducing layer materials, compared to using PCBM or lithium fluoride as resistance-reducing layer materials, provides superior performance to the perovskite solar cell. Among Examples 1 to 9, the cells of Examples 1 to 5 and 7 had superior overall performance. This means that the materials forming the resistance-reducing layer were preferably lithium sulfide, potassium sulfide, magnesium sulfide, or indium sulfide. The contact resistance of the perovskite solar cell fabricated in this way was lower, and the perovskite solar cell had superior overall performance.

[0080] Although the embodiments of the present invention have been described in detail above, the present invention is not limited to the specific details in the above embodiments, and various simple modifications can be made to the technical solutions of the present invention within the technical concept of the present invention, and all of these simple modifications fall within the protection scope of the present invention. It should also be noted that the specific technical features described in the above embodiments can be combined in any suitable manner as long as they are not contradictory.

[0081] It should be noted that in the description of this specification, references such as "one embodiment," "some embodiments," "examples," "specific examples," or "several examples" mean that the specific features, structures, materials, or characteristics described in connection with this embodiment or example are included in at least one embodiment or example of the present invention. In this specification, general expressions using the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in an appropriate manner in any one or more embodiments or examples. Furthermore, if not mutually inconsistent, those skilled in the art may combine and combine different embodiments or examples and features of different embodiments or examples described in this specification.

[0082] Although the embodiments of the present invention have been shown and described above, it should be understood that the above embodiments are illustrative and should not be construed as limitations on the present invention, and that those skilled in the art may make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention. [Explanation of symbols]

[0083] 100 - perovskite light absorbing layer, 200 - resistance reducing layer, 300 - electron transport layer, 400 - hole transport layer, 500 - transparent electrode layer, 600 - back electrode layer.

Claims

1. 1. A perovskite solar cell comprising: a perovskite light-absorbing layer; an electron transport layer; and a resistance-reducing layer located between the perovskite light-absorbing layer and the electron transport layer.

2. 2. The perovskite solar cell according to claim 1, wherein the material forming the resistance-reducing layer includes at least one of a metal sulfide, a metalloid sulfide, and a sulfur-containing organic material.

3. 3. The perovskite solar cell according to claim 2, wherein the material forming the resistance-reducing layer contains at least one of lithium sulfide, potassium sulfide, magnesium sulfide, arsenic sulfide, indium sulfide, manganese sulfide, and cobalt sulfide.

4. 2. The perovskite solar cell according to claim 1, wherein the resistance-reducing layer has a thickness of 3 nm or less.

5. The perovskite solar cell according to claim 4, wherein the resistance-reducing layer has a thickness of 1 to 3 nm.

6. The perovskite solar cell further includes a back electrode layer, a transparent electrode layer, and a hole transport layer; The structure of the perovskite solar cell is as follows: the transparent electrode layer is located on the electron transport layer on a side remote from the resistance reducing layer, the hole transport layer is located on the perovskite light absorbing layer on a side remote from the resistance reducing layer, and the back electrode layer is located on the hole transport layer on a side remote from the perovskite light absorbing layer; 2. The perovskite solar cell according to claim 1, wherein any one of the following conditions is satisfied: the hole transport layer is located on a side of the perovskite light-absorbing layer that is remote from the resistance-reducing layer; the transparent electrode layer is located on a side of the hole transport layer that is remote from the perovskite light-absorbing layer; and the back electrode layer is located on a side of the electron transport layer that is remote from the resistance-reducing layer.

7. 7. The perovskite solar cell according to claim 6, wherein the material forming the transparent electrode layer includes at least one of FTO, ITO, AZO, BZO, and IZO.

8. The chemical formula of the material forming the perovskite light absorbing layer is ABX ３ or A ２ CDX ６ 7. The perovskite solar cell of claim 6, wherein A is at least one of a methylamino group, a formamidine group, a cesium ion, and a rubidium ion; B is at least one of a divalent lead ion and a divalent tin ion; C is a monovalent silver ion; D is a trivalent bismuth ion; and X is at least one of a chloride ion, a bromide ion, and an iodide ion.

9. The perovskite solar cell according to claim 6, wherein the band gap of the perovskite light-absorbing layer is 1.20 to 2.30 eV.

10. The perovskite solar cell according to claim 6, wherein the perovskite light-absorbing layer has a thickness of 200 to 1000 nm.

11. The material forming the electron transport layer is [6,6]-phenyl C ６１ Methyl butyrate and [6,6]-phenyl C ７１ 7. The perovskite solar cell according to claim 6, comprising at least one of methyl butyrate, fullerene C60, fullerene C70, tin dioxide, and zinc oxide.

12. 7. The perovskite solar cell according to claim 6, wherein the material forming the hole transport layer includes at least one of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, poly-3-hexylthiophene, triptycene-cored triphenylamine, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-aniline)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiophene), poly(styrenesulfonyl), polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, and cuprous oxide.

13. 7. The perovskite solar cell according to claim 6, wherein the material forming the back electrode layer includes at least one of Ag, Cu, C, Au, Al, ITO, AZO, BZO, and IZO.

14. 14. A method for producing a perovskite solar cell according to any one of claims 1 to 13, comprising forming a resistance-reducing layer between the perovskite light-absorbing layer and the electron transport layer by vapor deposition.

15. 15. The method of claim 14, wherein the rate of deposition is between 0.005 and 0.03 A / s.

16. 15. The method of claim 14, wherein after the deposition is completed, the method further comprises evacuating the chamber, and the evacuating time is 20-40 min.

17. The method comprises: providing a transparent electrode layer; forming an electron transport layer on one side of the transparent electrode layer; forming a resistance reducing layer on a side of the electron transport layer away from the transparent electrode layer; forming a perovskite light absorbing layer on a side of the resistance reducing layer away from the electron transport layer; forming a hole transport layer on a side of the perovskite light absorbing layer away from the resistance reducing layer; and forming a back electrode layer on a side of the hole transport layer remote from the perovskite light absorbing layer.

18. The method comprises: providing a transparent electrode layer; forming a hole transport layer on one side of the transparent electrode layer; forming a perovskite light absorbing layer on a side of the hole transport layer away from the transparent electrode layer; forming a resistance-reducing layer on a side of the perovskite light-absorbing layer away from the hole transport layer; forming an electron transport layer on a side of the resistance reducing layer away from the perovskite light absorbing layer; 15. The method of claim 14, further comprising forming a back electrode layer on a side of the electron transport layer remote from the resistance reduction layer.

19. 14. An electric power consuming device comprising the perovskite solar cell of any one of claims 1 to 13.

Images