Modular microwave source with built-in optical sensor

Abstract

Embodiments disclosed herein include a semiconductor processing tool. In one embodiment, the semiconductor processing tool includes a chamber and a lid configured to seal the chamber. In one embodiment, a modular microwave plasma applicator is disposed through the lid, and an optical port is disposed through the lid adjacent to the modular microwave plasma source. In one embodiment, a pin is inserted into the optical port.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to U.S. patent application Ser. No. 17 / 981,278, filed Nov. 4, 2022, the entire contents of which are incorporated herein by reference.

[0002] Embodiments relate to the field of semiconductor manufacturing, and in particular to plasma processing tools that include a modular microwave source with an integrated optical sensor used to control plasma density.

[0003] 2. Description of Related Art In plasma processing environments, plasma characteristics are tightly controlled to ensure uniform process results on a substrate. Typically, controlled plasma characteristics include plasma density, electron density, plasma temperature, and the like. For uniform processing, it is generally desirable to maintain plasma characteristics as uniform as possible across the surface of the substrate being processed. In conventional plasma processing tools, a single energy source (e.g., RF or microwave) is used to ignite and sustain the plasma. This limits the number of adjustable knobs for adjusting plasma characteristics across the substrate surface. More advanced processing environments may offer multiple energy sources (and applicators). Increasing the number of applicators also allows for greater flexibility in adjusting plasma characteristics.

[0004] Typically, plasma properties are measured using optical emission spectroscopy (OES). OES systems include a port along the sidewall of the plasma chamber. Optical signals from the plasma exit the port and propagate to a controller. However, because the OES port is along the sidewall, only average values ​​of the plasma properties are obtained. This means that there is no ability to spatially resolve different regions of the plasma chamber (e.g., center vs. edge). Therefore, OES data does not allow for advanced spatial tuning (e.g., to improve uniformity or provide other desired plasma profiles). Summary of the Invention

[0005] Embodiments disclosed herein include a semiconductor processing tool. In one embodiment, the semiconductor processing tool includes a chamber and a lid configured to seal the chamber. In one embodiment, a modular microwave plasma applicator is disposed through the lid, and an optical port is disposed through the lid adjacent to the modular microwave plasma source. In one embodiment, a pin is inserted into the optical port.

[0006] Embodiments disclosed herein may also include a semiconductor processing tool comprising a chamber having a lid and a plurality of microwave applicators through the lid. In one embodiment, a plurality of microwave power sources are provided, where each of the plurality of microwave power sources is coupled to a separate one of the plurality of microwave applicators. In one embodiment, a plurality of optical ports are provided through the lid. Also, a controller is provided, where the plurality of optical ports and the plurality of microwave power sources are communicatively coupled to the controller.

[0007] Embodiments disclosed herein may also include a method of controlling a plasma process. In one embodiment, the method includes providing a plurality of microwave power sources to support a modular plasma in a chamber and acquiring optical signals from the modular plasma using a plurality of optical sensors. In one embodiment, the method includes sending the optical signals to a controller and determining, using the controller, microwave power and frequency settings for the plurality of microwave power sources to produce a desired plasma density uniformity in the chamber. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a cross-sectional view of a plasma chamber having an optical emission spectroscopy (OES) port in the chamber sidewall. [Figure 2] FIG. 1 illustrates a cross-sectional view of a modular microwave plasma chamber with an OES port through the chamber lid, according to one embodiment. [Figure 3] FIG. 10 is an enlarged cross-sectional view more clearly illustrating the structure of the modular microwave applicator and OES port, according to one embodiment. [Figure 4A] FIG. 1 is a plan view of a lid showing the layout of modular microwave applicators and OES ports along the periphery of the lid, according to one embodiment. [Figure 4B] FIG. 1 is a plan view of a lid showing the layout of modular microwave applicators and OES ports along the periphery of the lid, according to one embodiment. [Figure 4C] FIG. 1 is a plan view of a lid showing the layout of modular microwave applicators and OES ports distributed across the entire surface of the lid, according to one embodiment. [Figure 5] FIG. 1 is a cross-sectional view of a plasma chamber including a modular microwave applicator controlled by a machine learning (ML) or artificial intelligence (AL) controller using feedback from one or more OES ports and from the microwave power source, according to one embodiment. [Figure 6] FIG. 1 is a process flow diagram of a process for controlling plasma density in a modular microwave plasma chamber using an ML controller or an AI controller, according to one embodiment. [Figure 7] FIG. 1 illustrates a block diagram of an exemplary computer system that may be used with a processing tool, according to one embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] The systems described herein include plasma processing tools that include modular microwave sources with integrated optical sensors used to control plasma density. In the following description, numerous specific details are set forth to provide a thorough understanding of the embodiments. It will be apparent to those skilled in the art that the embodiments may be practiced without such specific details. Otherwise, well-known aspects are not described in detail so as not to unnecessarily obscure the embodiments. Furthermore, it should be understood that the various embodiments illustrated in the accompanying drawings are illustrative representations and are not necessarily drawn to scale.

[0010] As described above, optical emission spectroscopy (OES) can be used to identify one or more plasma parameters in a plasma processing tool. Unfortunately, existing solutions do not allow for spatial characterization of plasma properties within the chamber because OES ports are typically located in the sidewalls of the chamber. Such averaging of plasma properties is appropriate for chambers containing a single power source and / or applicator, where it is much more difficult to vary the plasma across the substrate surface.

[0011] However, in more advanced semiconductor processing tools (e.g., modular microwave plasma tools), the ability to tune the plasma across the surface of the substrate becomes more feasible. In some cases, multiple microwave applicators may be tuned to improve plasma uniformity or to provide a non-uniform plasma profile that takes into account incoming substrate non-uniformities, bowing, etc. Thus, it is desirable to provide feedback control informed by spatial mapping of the plasma.

[0012] In some embodiments disclosed herein, the plasma is monitored through an OES port located through the chamber lid rather than through the side. Thus, multiple OES ports can be used to determine plasma characteristics across the substrate surface. This feedback can be used by a controller (e.g., a machine learning (ML) controller or an artificial intelligence (AI) controller) to modify settings of individual microwave applicators. For example, the power, frequency, etc. provided to the microwave applicators can be modified to provide a desired plasma profile.

[0013] Locating an OES port through the lid also allows the substrate to be closer to the lid faceplate, since horizontal ports through the chamber sidewalls do not need to be above the level of the substrate. In some embodiments, the OES port is located along the entire outer periphery of a substrate being processed in the chamber. This can be beneficial in that the OES port does not adversely affect the plasma at the substrate. However, in other embodiments, one or more OES ports may be located inside the periphery of a substrate being processed in the chamber.

[0014] In one embodiment, the OES port may be filled with a pin that is transparent (to electromagnetic radiation). For example, in some embodiments, the pin may comprise sapphire or quartz. The pin fills the space of the OES port and prevents a plasma from igniting within that space (i.e., via the hollow cathode effect). In some cases, the pin may be a two-piece pin. A first portion of the pin may be in the faceplate and a second portion of the pin may be in the cover. Being two-piece allows for accommodating mismatches in the coefficient of thermal expansion (CTE) between the layers without destroying the pin.

[0015] In some embodiments, a controller of a plasma processing chamber may receive feedback from one or more of the OES ports and / or one or more of the microwave power sources. This feedback may be used to adjust and tune the plasma in the chamber. However, embodiments are not limited to a single controller architecture (e.g., closed-loop control). As described above, the controller may be an ML controller or an AI controller. In such embodiments, the controller can learn from the OES feedback. For example, the controller may learn how changing one or more parameters of the microwave power source affects the plasma. This learning data may be utilized to more accurately and timely tune the plasma to a desired state. ML and AI control may also be used to identify how multiple microwave applicators affect each other, for example, through a multiple-input multiple-output (MIMO) control system. Through learning, the controller may build a more accurate digital twin of the processing chamber, providing modeling that can augment existing modeling that relies solely on physical and chemical equations describing the process.

[0016] 1 , a cross-sectional view of a semiconductor processing tool 100 is shown to provide context for embodiments described in detail below. As shown, the semiconductor processing tool 100 may include a chamber body 105. The chamber body 105 may be closed by a lid 121. In one embodiment, a pedestal 107 supports a chuck 109. The pedestal 107 may be vertically displaceable within the chamber body 105 to position a substrate 110 within the chamber body 105.

[0017] The substrate 110 may be a typical substrate processed in a plasma processing step. For example, the substrate 110 may include a semiconductor substrate (e.g., a wafer), although other form factors may be used in other cases. In FIG. 1 , the diameter of the substrate 110 is smaller than the diameter of the chuck 109. However, in some cases, the substrate 110 may extend beyond the edge of the chuck 109. The chuck 109 may be an electrostatic chuck (ESC) or any other suitable chucking mechanism. The chuck 109 may include heating and / or cooling elements to control the temperature of the substrate 110 during processing.

[0018] In FIG. 1 , an adapter 112 separates the chamber body 105 from the lid 121. The adapter 112 may include a port 113. Electromagnetic radiation 115 from the plasma 135 in the chamber body 105 may propagate out through the port 113. Because the port 113 is on the side of the tool 100, the electromagnetic radiation 115 is from the entire width of the plasma 135. This means that it is difficult (if not impossible) to gain a spatial understanding of the plasma 135. Only an average value across the plasma 135 is received. Additionally, if the port is located above the substrate 110 (to monitor the processing region of the tool 100), the distance between the showerhead 122 and the substrate 110 will be large.

[0019] The showerhead 122 may include channels (not shown) for flowing one or more gases 127 into the chamber body 105. For example, one or more inlets 125 may be coupled to the showerhead 122. Additionally, the showerhead 122 may function as an electrode for coupling energy into the chamber body 105. For example, the showerhead 122 may be coupled to a source 130 (e.g., an RF source, a microwave source, etc.). Although not shown, a second source may optionally be coupled to the chuck 109.

[0020] In FIG. 1 , tool 100 may be described as having a single source or a single applicator, which means that control of the plasma over the surface of substrate 110 is limited. However, as tools have evolved, using modular sources has become a viable solution. In such embodiments, the power coupled to the chamber is provided by multiple applicators. Each applicator may be individually controlled to provide a desired plasma profile across the surface of the substrate. In certain embodiments, multiple microwave power sources may be used in conjunction with multiple microwave applicators. In such embodiments, it may be desirable to provide more spatially resolved feedback to control the plasma profile across the substrate surface.

[0021] Accordingly, embodiments having an OES port through the top surface or lid of the chamber are described. Referring now to FIG. 2 , a cross-sectional view of one such semiconductor processing tool 200 is shown, according to one embodiment. In one embodiment, the semiconductor processing tool 200 includes a chamber body 205. The chamber body 205 may be sealed by a lid 221 to define an interior space in which a plasma 235 may form. In one embodiment, the semiconductor processing tool 200 may include a pedestal 207 and a chuck 209. The pedestal 207 may be vertically displaceable to change the position of the substrate 210 within the chamber body 205. In one embodiment, the chuck 209 may be an ESC or the like. The chuck 209 may include heating and / or cooling elements to control the temperature of the substrate 210 during processing.

[0022] In one embodiment, substrate 210 may be a semiconductor substrate. For example, substrate 210 may be a silicon wafer having a standard form factor (e.g., 150 mm, 200 mm, 300 mm, 450 mm, etc.). However, in other embodiments, substrate 210 may have other form factors (e.g., a reticle form factor or a panel form factor). In one embodiment, as shown in FIG. 2, the diameter of substrate 210 may be smaller than the diameter of chuck 209. However, in some embodiments, substrate 210 may overhang the edge of chuck 209.

[0023] In one embodiment, a showerhead or the like can be disposed through the lid 221. In the embodiment shown in Figure 2, the showerhead includes a faceplate 241 and a cover 242. The faceplate 241 can be directly exposed to the interior of the chamber body 205, and the cover 242 can be disposed on top of the faceplate 241. The faceplate 241 and the cover 242 can be made of different materials. For example, the faceplate 241 can be a conductor, and the cover 242 can be made of an electrically insulating material.

[0024] In one embodiment, the showerhead may include a fluid path (not shown) through one or both of the faceplate 241 and the cover 242. The fluid path may be adapted to allow one or more gases to enter the chamber body 205. The gases entering the chamber body 205 may be ignited into a plasma 235. The plasma 235 may be located above the substrate 210. In one embodiment, the width of the plasma 235 may be wider than the diameter of the substrate 210.

[0025] In one embodiment, multiple modular applicators 250 can be provided through the showerhead. The modular applicators 250 can include a dielectric having a blind hole in its upper surface. An antenna 251 can be provided within the hole. The antenna 251 is a conductive feature coupled to a power source (not shown). In a particular embodiment, the power source is a modular microwave power source. Thus, each of the applicators 250 can be coupled to a microwave source to deliver microwave power to the chamber body 205 to strike and maintain the plasma 235. In one embodiment, the bottom surface of the applicators 250 (i.e., the bottom dielectric surface) is exposed to the bottom of the showerhead within the chamber body 205.

[0026] In one embodiment, semiconductor processing tool 200 may further include one or more OES ports 255. OES port 255 may include a port through the showerhead (i.e., faceplate 241 and cover 242). OES port 255 may be filled with pins (e.g., pins that are transparent to the electromagnetic radiation emitted by plasma 235). For example, the pins may comprise sapphire, quartz, or the like. As shown, electromagnetic radiation 215 emitted by plasma 235 passes through OES port 255.

[0027] In one embodiment, the OES port 255 is located outside the periphery of the substrate 210. As such, the surface of the OES port 255 may not directly interfere with the plasma above the substrate 210. However, as described in more detail below, one or more OES ports 255 may be located inside the periphery of the substrate 210. Additionally, because the OES port 255 is located above the plasma 235, it is possible to determine the plasma characteristics in a given area, as opposed to receiving an average value of the plasma characteristics within the chamber body 205. Furthermore, because the OES port 255 is located above the substrate 210, it is possible to bring the substrate 210 closer to the faceplate 241.

[0028] 3, an enlarged cross-sectional view of a portion of a semiconductor processing tool 300 is shown, according to a further embodiment. As shown, the semiconductor processing tool 300 may include a chuck 309 and a substrate 310 on the chuck 309. The chuck 309 and the substrate 310 may be substantially similar to the chuck 209 and the substrate 210 described in detail above. In one embodiment, a showerhead including a faceplate 341 and a cover 342 may be provided above the chuck 309 and the substrate 310. A plasma 335 may be formed between the faceplate 341 and the substrate 310.

[0029] In one embodiment, a modular applicator 350 can be provided through the cover 342 and faceplate 341. As shown, the modular applicator 350 can have a stepped, cylindrical design. A first cylinder having a first diameter can be provided below a second cylinder having a second (larger) diameter. The second, larger diameter is sufficient to provide a ledge upon which a seal ring 352 (e.g., an O-ring) can rest. As such, the modular applicator 350 can provide a seal between the external environment and the internal process area where the plasma 335 is formed.

[0030] In one embodiment, modular applicator 350 may include a bore 353. Bore 353 may be located at the axial center of modular applicator 350. Bore 353 may have a rounded bottom surface. Additionally, antenna 351 may be inserted into bore 353. Antenna 351 may have a gap between its bottom surface and the bottom surface of bore 353. This gap may allow antenna 351 to expand during use. Antenna 351 may be coupled to a microwave power source (not shown). While a single modular applicator 350 is shown in FIG. 3 , it will be appreciated that any number of modular applicators 350 may be included in semiconductor processing tool 300.

[0031] In one embodiment, an OES port 355 may be provided through faceplate 341 and cover 342. OES port 355 may be filled with pins 356 / 357. Pins 356 / 357 may be separated into two separate components (i.e., bottom pin 356 and top pin 357). The use of two separate pins 356 and 357 allows for thermal expansion mismatch between faceplate 341 and cover 342 (e.g., due to different CTEs between the materials). If a single pin were used, the thermal expansion mismatch could cause the single pin to break. However, in some embodiments, a single pin may be sufficient to fill OES port 355.

[0032] In one embodiment, the pins 356 / 357 can be formed of a material that is substantially transparent to the electromagnetic radiation emitted by the plasma 335. For example, the pins 356 / 357 can include sapphire, quartz, or the like. In one embodiment, the bottom pin 356 can have dual diameters. A first diameter can be at the bottom end of the bottom pin 356, and a second (larger) diameter can be at the top end of the bottom pin 356. The diameter of the top pin 357 can substantially match the second diameter at the top end of the bottom pin 356. In one embodiment, the OES port 355 can be substantially filled with the pins 356 / 357. Therefore, there are no gaps within the showerhead, and no plasma can form in these gaps (i.e., due to the hollow cathode effect).

[0033] The OES port 355 may be coupled to an optical waveguide (not shown) to transmit the optical signal from the chamber to a controller (not shown). The controller may convert the optical signal into a measurement of one or more plasma properties (e.g., plasma density, electron density, plasma temperature, etc.). A coupler (not shown) may couple the OES port 355 to the optical waveguide.

[0034] In the illustrated embodiment, the OES port 355 is located outside the diameter of the substrate 310. However, in other embodiments, the OES port 355 may be located inside the diameter of the substrate 310. It will be appreciated that although a single OES port 355 is shown in Figure 3, any number of OES ports 355 may be provided in the semiconductor processing tool 300.

[0035] 4A-4C, a series of plan views are shown illustrating the layout of modular microwave applicators 450 and OES ports 455 within faceplate 441, according to one embodiment. It will be appreciated that the examples shown in Figures 4A-4C are merely illustrative of some embodiments; that is, embodiments are not limited to those shown in Figures 4A-4C.

[0036] 4A, a plan view of a faceplate 441 is shown, according to one embodiment. The faceplate 441 may be part of a showerhead integrated with the lid of a semiconductor processing tool, as described in detail above. In one embodiment, multiple modular microwave applicators 450 may be distributed across the surface of the faceplate 441. For example, FIG. 4A shows 19 modular microwave applicators 450. However, it will be appreciated that the faceplate 441 may include a fewer or greater number of modular microwave applicators 450.

[0037] In one embodiment, a set of three OES ports 455 are distributed across face plate 441. The OES ports 455 may be located outside the diameter of a substrate (not shown) being processed in a semiconductor processing tool. For example, the OES ports 455 are shown as being distributed adjacent the periphery of face plate 441. Additionally, although three OES ports 455 are shown, it will be appreciated that any number of OES ports 455 may be included on face plate 441.

[0038] In one embodiment, the OES ports 455 are distributed to allow measurements of plasma characteristics at various locations within the chamber, thereby enabling measurements of plasma uniformity to be determined. Instead of using a single port to average plasma characteristics across the surface of the substrate, embodiments disclosed herein allow for determination of plasma characteristics at multiple different locations.

[0039] Referring now to FIG. 4B , a plan view of a faceplate 441 according to yet another embodiment is shown. Compared to the embodiment of FIG. 4A , the number of modular microwave applicators 450 is reduced. Specifically, a set of three modular microwave applicators 450 is shown. In one embodiment, the microwave applicators 450 may be larger than the microwave applicators 450 of FIG. 4A . In other embodiments, the microwave applicators 450 may be mounted on a smaller faceplate 441. For example, the faceplate 441 and microwave applicator 450 configuration shown in FIG. 4B may be used in a remote plasma system. That is, the plasma may be generated in a pre-chamber outside the main processing chamber and flow into the main processing chamber.

[0040] As shown, multiple OES ports 455 may be distributed across face plate 441. OES ports 455 may include two OES ports 455. In other embodiments, the number of OES ports 455 may equal the number of modular microwave applicators 450. In one embodiment, OES ports 455 are located near the periphery of face plate 441. However, one or more OES ports 455 may be located toward the center of face plate 441 in some embodiments.

[0041] Referring now to FIG. 4C , a plan view of face plate 441 is shown, according to a further embodiment. In the embodiment shown in FIG. 4C , the distribution and number of modular microwave applicators 450 are substantially similar to the layout shown in FIG. 4A . However, OES ports 455 are not limited to the periphery of face plate 441, but may be distributed across the entire surface of face plate 441, as shown in FIG. 4C . For example, a total of seven OES ports 455 are shown in FIG. 4C . In one embodiment, one or more of the OES ports 455 may be within the periphery of a substrate (not shown) being processed in the chamber below face plate 441.

[0042] Referring now to FIG. 5 , a cross-sectional view of a semiconductor processing tool 500 is shown, according to one embodiment. In one embodiment, the semiconductor processing tool 500 can include a chuck 509 having a substrate 510 disposed thereon. A showerhead having a faceplate 541 and a cover 542 can be disposed above the substrate 510. In one embodiment, multiple microwave applicators 550 are disposed through the showerhead. An antenna 551 can be disposed at the axial center of each of the microwave applicators 550. The microwave applicators 550 can couple energy from a microwave power source 571 into the chamber to form a plasma 535. As shown, the plasma 535 can be formed with multiple plasma regions 535A-535N. That is, each microwave applicator 550 can form a plasma region directly below a given microwave applicator 550, and adjacent plasma regions can merge with each other. Although three plasma regions 535A-535N are shown, it will be appreciated that any number of plasma regions 535 may be formed depending on the number of modular microwave applicators 550. As shown, each of the microwave applicators 550 may be coupled to a separate one of the microwave power sources 571A-571N, such that the plasma regions 535 may be individually controlled.

[0043] In one embodiment, the semiconductor processing tool 500 may include multiple OES ports 555. Each OES port 555 may be filled with pins, including lower pins 556 and upper pins 557. Each of the OES ports 555 may be coupled to a controller 570. The OES ports 555 provide feedback data to the controller 570 to assist in controlling the plasma regions 535A-535N. For example, optical signals from the OES ports 555 may be converted by the controller 570 into one or more plasma properties (e.g., plasma density, electron density, plasma temperature, etc.). The controller 570 may also receive feedback from the microwave power sources 571A-571N. For example, forward power, reflected power, frequency, etc. may be returned to the controller as additional feedback information.

[0044] In one embodiment, controller 570 takes feedback information from OES port 555 and microwave power supply 571 and uses this feedback information to modify one or more parameters of the plasma by feeding back one or more control signals to microwave power supply 571. For example, controller 570 may send signals to power supply 571 that cause changes to forward power, frequency, match settings, etc.

[0045] In one embodiment, the controller 570 may be a standard closed-loop controller. In other embodiments, the controller 570 may be an ML controller and / or an AI controller. If the controller 570 is ML and AI, it may further learn from feedback information to more accurately and timely control the plasma region 535. For example, feedback data may be used to learn how the semiconductor processing tool 500 responds to changes in one or more parameters. The ML controller and / or AI controller 570 may enable a more accurate understanding of conditions within the semiconductor processing tool 500. For example, the ML controller and / or AI controller may assist in creating a digital twin of the semiconductor processing tool, which goes beyond standard physics-based and chemistry-based equations for modeling the semiconductor processing tool 500. Furthermore, the ML controller and / or AI controller 570 may assist in implementing MIMO control of the system. As such, improved plasma uniformity may be obtained using embodiments disclosed herein.

[0046] 6, a process flow diagram of a process 680 for controlling a plasma processing tool is shown, according to one embodiment. Process 680 may be performed in any of the plasma processing tools detailed herein.

[0047] In one embodiment, process 680 begins at step 681 with providing multiple microwave power sources to support a modular plasma in the chamber. For example, the microwave power sources can be coupled to plasma applicators through a showerhead on the lid of the plasma chamber. The plasma applicators couple microwave power to process gases in the plasma chamber to excite and sustain the plasma. As used herein, modular plasma can refer to a plasma formed through the use of multiple modular microwave applicators. That is, each region of the modular plasma can be controlled by its associated microwave applicator and associated microwave power source.

[0048] In one embodiment, process 680 may continue at step 682, which includes acquiring optical signals from the modular plasma using a plurality of optical sensors. For example, an OES port may be provided through the lid of the plasma chamber. The OES port may be provided along the periphery of the lid. In another embodiment, the OES port may be provided in a central region of the lid. The OES port may comprise a pin structure of an optically transparent material (e.g., sapphire or quartz).

[0049] In one embodiment, process 680 may continue at step 683, which includes sending the optical signal to a controller. The optical signal may be sent to the controller by optically coupling the OES port to the controller (e.g., with a fiber optic cable).

[0050] In one embodiment, process 680 may continue at step 684, which includes sending the power supply parameters to a controller. In one embodiment, the power supply parameters may include forward power, reflected power, frequency, etc. The power supply parameters and the optical signal may be used as feedback by the controller.

[0051] In one embodiment, process 680 may continue at step 685, which includes using a controller to determine microwave power and frequency settings for multiple microwave power sources to produce desired plasma density uniformity within the chamber. In some embodiments, plasma uniformity may refer to plasma density, electron density, plasma temperature, etc. In one embodiment, the controller may be a simple closed-loop controller. In other embodiments, the controller may utilize ML and / or AI modules to improve process control within the chamber.

[0052] Referring now to FIG. 7 , a block diagram of an exemplary computer system 700 of a processing tool is shown, according to one embodiment. In one embodiment, the computer system 700 is coupled to the processing tool and controls processing in the processing tool. The computer system 700 may be connected to (e.g., networked with) other machines over a local area network (LAN), an intranet, an extranet, or the Internet. The computer system 700 may operate in the role of a server or a client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. The computer system 700 may be a personal computer (PC), a tablet PC, a set-top box (STB), a personal digital assistant (PDA), a mobile phone, a web appliance, a server, a network router, switch, or bridge, or any machine capable of executing a set of instructions (sequential or otherwise) that specify actions to be performed by the machine. Furthermore, although only a single machine is shown as computer system 700, the term "machine" should also be interpreted to include any collection of machines (e.g., computers) that individually or jointly execute an instruction set (or multiple instruction sets) to perform any one or more of the methods described herein.

[0053] The computer system 700 may include a computer program product or software 722 having a non-transitory machine-readable medium having instructions stored thereon, which may be used to program the computer system 700 (or other electronic device) to perform processes in accordance with an embodiment. A machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer). For example, machine-readable media (such as computer-readable media) include machine- (e.g., computer) readable storage media (e.g., read-only memory (ROM), random-access memory (RAM), magnetic disk storage media, optical storage media, flash memory devices, etc.) and machine- (e.g., computer) readable transmission media (electrical, optical, acoustic, or other forms of propagated signals, such as infrared or digital signals).

[0054] In one embodiment, computer system 700 includes a system processor 702, a main memory 704 (e.g., read only memory (ROM), flash memory, dynamic random access memory (DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM)), a static memory 706 (e.g., flash memory or static random access memory (SRAM)), and a secondary memory 718 (e.g., a data storage device), which communicate with each other via a bus 730.

[0055] System processor 702 represents one or more general-purpose processing devices (e.g., microsystem processors, central processing units, etc.). More specifically, the system processor may be a complex instruction set computing (CISC) microsystem processor, a reduced instruction set computing (RISC) microsystem processor, a very long instruction word (VLIW) microsystem processor, a system processor implementing other instruction sets, or a system processor implementing a combination of instruction sets. System processor 702 may also be one or more special-purpose processing devices, such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal system processor (DSP), a network system processor, etc. System processor 702 is configured to execute processing logic 726 for performing the operations described herein.

[0056] The computer system 700 may further include a system network interface device 708 for communicating with other devices or machines. The computer system 700 may also include a video display unit 710 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 712 (such as a keyboard), a cursor control device 714 (such as a mouse), and a signal generation device 716 (such as a speaker).

[0057] The secondary memory 718 may include a machine-accessible storage medium 731 (or, more specifically, a computer-readable storage medium) having stored thereon one or more sets of instructions (e.g., software 722) that embody any one or more of the methods or functions described herein. This software 722 may also reside, completely or at least partially, within the main memory 704 and / or the system processor 702 while being executed by the computer system 700, with the main memory 704 and the system processor 702 also constituting machine-readable storage media. The software 722 may further be transmitted or received over the network 720 via the system network interface device 708. In one embodiment, the network interface device 708 may operate using RF, optical, acoustic, or inductive coupling.

[0058] While in an exemplary embodiment, machine-accessible storage medium 731 is illustrated as a single medium, the term "machine-readable storage medium" should be interpreted to include a single medium or multiple media (e.g., a centralized or distributed database, and / or associated caches and servers) on which one or more sets of instructions are stored. The term "machine-readable storage medium" should also be interpreted to include any medium capable of storing or encoding a set of instructions for execution by a machine and causing the machine to perform any one or more of the methods. Accordingly, the term "machine-readable storage medium" should be interpreted to include, but not limited to, solid-state memories, and optical and magnetic media.

[0059] In the foregoing specification, specific and exemplary embodiments have been described. It will be apparent that various modifications may be made to such embodiments without departing from the scope of the following claims. The specification and drawings are, therefore, to be regarded in an illustrative rather than a restrictive sense.

Claims

1. 1. A semiconductor processing tool comprising: a chamber; a lid configured to seal the chamber; a modular microwave plasma applicator that passes through the lid; an optical port through the lid adjacent to the modular microwave plasma source; a pin inserted into the optical port; 1. A semiconductor processing tool comprising:

2. The semiconductor processing tool of claim 1 , wherein the pin comprises sapphire or quartz.

3. The semiconductor processing tool of claim 1 , wherein the lid comprises a faceplate and a cover, and the pins extend through both the faceplate and the cover.

4. 4. The semiconductor processing tool of claim 3, wherein the pin comprises a first portion in the faceplate and a second portion in the cover, the first portion being a separate piece from the second portion.

5. 10. The semiconductor processing tool of claim 1, wherein the pins include a first width at a first surface exposed within the chamber and a second width at a second surface exposed outside the chamber.

6. The modular microwave plasma applicator comprises: a dielectric having holes extending into but not passing through the dielectric; an antenna inserted into the hole; The semiconductor processing tool of claim 1 , comprising:

7. The semiconductor processing tool of claim 6 , wherein a bottom surface of the dielectric is exposed to the interior of the chamber.

8. a plurality of modular microwave plasma applicators, a plurality of optical ports, and a plurality of pins; The semiconductor processing tool of claim 1 , further comprising:

9. The semiconductor processing tool of claim 8 , wherein the plurality of optical ports and the plurality of pins are disposed along a periphery of the semiconductor processing tool.

10. The semiconductor processing tool of claim 9 , further comprising a substrate within said chamber, said plurality of optical ports and said plurality of pins being positioned outside a periphery of said substrate.

11. 1. A semiconductor processing tool comprising: a chamber having a lid; a plurality of microwave applicators passing through the lid; a plurality of microwave power sources, each coupled to a different one of the plurality of microwave applicators; a plurality of optical ports through the lid; A controller; wherein the plurality of optical ports and the plurality of microwave power sources are communicatively coupled to the controller. Semiconductor processing tools.

12. The semiconductor processing tool of claim 11 , wherein the controller converts optical signals from the plurality of optical ports into plasma density measurements.

13. 12. The semiconductor processing tool of claim 11, wherein the controller is configured to provide microwave parameters to the plurality of microwave power sources to control plasma uniformity within the chamber.

14. The semiconductor processing tool of claim 13 , wherein the microwave parameters include microwave power and microwave frequency.

15. The semiconductor processing tool of claim 13 , wherein each microwave power source of the plurality of microwave power sources receives different microwave parameters.

16. The semiconductor processing tool of claim 11 , wherein the controller receives feedback from the plurality of microwave power sources.

17. The semiconductor processing tool of claim 16 , wherein the feedback comprises forward power, reflected power, and microwave frequency.

18. 12. The semiconductor processing tool of claim 11, wherein the controller is a machine learning (ML) controller or an artificial intelligence (AI) controller.

19. 1. A method for controlling a plasma process, comprising: providing a plurality of microwave power sources for supporting a modular plasma within the chamber; acquiring optical signals from the modular plasma using a plurality of optical sensors; sending an optical signal to a controller; determining microwave power and frequency settings for the plurality of microwave power sources using the controller to produce a desired plasma density uniformity within the chamber; A method comprising:

20. 20. The method of claim 19, wherein the controller is a machine learning (ML) controller or an artificial intelligence (AI) controller.

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