HEAT SOURCE ARRANGEMENTS, PROCESSING CHAMBERS, AND RELATED METHODS FOR FACILITARY TO ADJUST DEPOSITION PROCESSES - Patent application

Abstract

The present disclosure relates to a heat source arrangement, a processing chamber, and related methods for facilitating adjustment of a deposition process. In one embodiment, a processing chamber applicable for use in semiconductor manufacturing includes a lower window and an upper window. The lower window and the upper window at least partially define an interior space. The processing chamber includes a substrate support disposed in the interior space, the substrate support including a support surface. The processing chamber includes one or more internal heat sources. Each of the one or more internal heat sources is oriented substantially parallel to a surface of the support surface. The processing chamber includes one or more external heat sources disposed outward from the internal heat sources. Each of the one or more external heat sources is oriented non-parallel to the surface of the support surface.

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE

[0001] This disclosure relates to heat source arrangements, processing chambers, and related methods for facilitating tuning of deposition processes. [Background technology]

[0002]

[0002] Semiconductor substrates are processed for a variety of applications, including the fabrication of integrated devices and microdevices. During processing, various parameters can affect the uniformity of material deposited on the substrate. Quality and consistency (e.g., of epitaxial layers) can depend on precise temperature and flow control within the chamber. For example, the temperature of the substrate and / or the temperature of one or more processing chamber components can affect the uniformity of deposition.

[0003]

[0003] Temperature non-uniformity can therefore affect deposition uniformity, especially after adjustment of parameters (such as temperature, pressure, and gas flow rates). Adjusting parameters (such as temperature, gas flow rates, and gas pressure) for deposition uniformity can be difficult. As an example, it can be difficult to adjust the temperature of an outer portion of the substrate without unintentionally affecting the temperature of one or more other portions of the substrate and / or chamber components. Substrate rotation, if used, can further exacerbate adjustment difficulties. Relatively low rotation speeds, high pressures, and low flow rates can also exacerbate adjustment difficulties.

[0004]

[0004] Therefore, a need exists for improved processing chambers and related methods that facilitate parameter uniformity and ease of adjustment of process parameters (such as temperature). Summary of the Invention

[0005]

[0005] The present disclosure relates to heat source arrangements, processing chambers, and related methods for facilitating tuning of deposition processes, for example, for silicon substrates.

[0006] In one embodiment, a processing chamber applicable for use in semiconductor manufacturing includes a lower window and an upper window. The lower window and the upper window at least partially define an interior space. The processing chamber includes a substrate support disposed in the interior space, the substrate support including a support surface. The processing chamber includes one or more internal heat sources. Each of the one or more internal heat sources is oriented substantially parallel to a surface of the support surface. The processing chamber includes one or more external heat sources disposed outwardly from the one or more internal heat sources. Each of the one or more external heat sources is oriented non-parallel to the surface of the support surface.

[0007] In one embodiment, a processing chamber applicable for use in semiconductor manufacturing includes a lower window and an upper window. The lower window and the upper window at least partially define an interior space. The processing chamber includes a substrate support disposed in the interior space. The substrate support includes an outer radius and a support surface. The processing chamber includes one or more heat sources. Each heat source of the one or more heat sources is aligned at a fixed offset relative to the center of the substrate support. The offset is a fixed ratio of the outer radius, the ratio being 0.65 or greater.

[0008] In one embodiment, a method for processing a substrate includes heating a substrate positioned on a substrate support within a processing space of a chamber. The heating includes directing radiant light radially outward from one or more internal heat sources toward an interior portion of the substrate and directing linear light linearly from one or more external heat sources toward an exterior portion of the substrate. The method includes flowing one or more process gases over the substrate to form one or more layers on the substrate and evacuating the one or more process gases. [Brief explanation of the drawings]

[0009]

[0009] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above can be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings depict only exemplary embodiments and therefore should not be considered as limiting the scope thereof, as other equally effective embodiments may also be permitted.

[0010] [Figure 1] 1 is a schematic cross-sectional side view of a processing chamber according to one embodiment. [Figure 2]

[0011] 2 is a schematic enlarged view of the processing chamber shown in FIG. 1 according to one embodiment. [Figure 3]

[0012] 1 is a schematic cross-sectional side view of a processing chamber according to one embodiment. [Figure 4]

[0013] 4 is a schematic partial top view of the processing chamber shown in FIG. 3, according to one embodiment. [Figure 5]

[0014] 4 is a schematic partial top view of the processing chamber shown in FIG. 3, according to one embodiment. [Figure 6]

[0015] 1 is a schematic cross-sectional side view of a processing chamber according to one embodiment. [Figure 7]

[0016] 1 is a schematic block diagram of a method for processing a substrate, according to one embodiment. [Figure 8]

[0017] FIG. 1 is a schematic diagram of a graph showing normalized irradiance versus horizontal position (mm) within a processing chamber, according to one embodiment. [Figure 9]

[0018] 4 is a schematic diagram of one of the lower outer heat sources shown in FIG. 3, according to one embodiment.

[0011]

[0019] For ease of understanding, wherever possible, like reference numerals have been used to designate like elements common to the figures, and it is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION OF THE INVENTION

[0012]

[0020] SUMMARY The present disclosure relates to heat source arrangements, processing chambers, and related methods for facilitating tuning of deposition processes.

[0013]

[0021] In this disclosure, it is contemplated that terms such as "connection," "connection," "couple," and "coupled" may include, but are not limited to, welding, fusing, melting, interference fitting, and / or fastening by the use of, for example, bolts, threaded connections, pins, and / or screws. In this disclosure, it is contemplated that terms such as "connection," "connection," "couple," and "coupled" may include, but are not limited to, integral formation. In this disclosure, it is contemplated that terms such as "connection," "connection," "couple," and "coupled" may include, but are not limited to, direct connection and / or indirect connection, for example, through a component such as a link.

[0014]

[0022] 1 is a schematic cross-sectional side view of a processing chamber 100 according to one embodiment. The processing chamber 100 is a deposition chamber. In one embodiment, which can be combined with other embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is utilized to grow an epitaxial film on a substrate 102. The processing chamber 100 generates a cross-flow of precursors across a top surface 150 of the substrate 102.

[0015]

[0023] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. In one or more embodiments, the upper body 156 includes an upper clamp ring, and the lower body 148 includes a lower clamp ring. In one or more embodiments, the flow module 112 includes a base ring. The processing chamber 100 includes an upper reflector structure 154 and a lower reflector structure 149 (each of the reflector structures 154, 149 may be referred to as a heat shield). The upper body 156, the flow module 112, the lower body 148, the upper reflector structure 154, and the lower reflector structure 149 form the chamber body.

[0016]

[0024] Disposed within the chamber body are a substrate support 106, an upper window 108 (e.g., an upper dome), a lower window 110 (e.g., a lower dome), a plurality of upper heat sources 141, 171, and a plurality of lower heat sources 143, 173. In the present disclosure, each of the upper heat sources 141, 171 and each of the lower heat sources 143, 173 may include, for example, a heat lamp, a side-mounted resistive heater, a light-emitting diode (LED), and / or a laser. In one or more embodiments, each of the upper heat sources 141, 171 and each of the lower heat sources 143, 173 includes a lamp configured to emit infrared radiation (IR) light.

[0017]

[0025] As shown, a controller 120 is in communication with the processing chamber 100 and is used to control the processes and methods, such as the method steps described herein. The substrate support 106 has a support surface 109 that supports the substrate 102.

[0018]

[0026] The substrate support 106 is disposed between an upper window 108 and a lower window 110. The substrate support 106 includes a support surface 123 that supports the substrate 102. A plurality of upper heat sources 141, 171 are disposed between the upper window and an upper reflector structure 154. The upper reflector structure 154 may be part of a lid. The upper reflector structure 154 may include a plurality of sensors (not shown) disposed therein or thereon for measuring the temperature inside the processing chamber 100.

[0019]

[0027] A reflective coating is formed on one or more inner surfaces of the upper reflector structure 154 and one or more inner surfaces of the lower reflector structure 149. The reflective coating may be similar to or the same as the inner coating 183 described below.

[0020]

[0028] The plurality of lower heat sources 143, 173 are disposed between the lower window 110 and the floor 152. The upper window 108 is an upper dome and is formed of an energy transmitting material such as quartz. The lower window 110 is a lower dome and is formed of an energy transmitting material such as quartz. In one or more embodiments, each of the windows 108, 110 is formed of a material that transmits at least 95% of light having wavelengths in the infrared (IR) region.

[0021]

[0029] A process space 136 and a purge space 138 are formed between the upper window 108 and the lower window 110. The process space 136 and the purge space 138 are part of an interior space that is at least partially defined by the upper window 108, the lower window 110, and one or more liners 163.

[0022]

[0030] The interior space has a substrate support 106 disposed therein. The substrate support 106 includes a surface 161 on which the substrate 102 is disposed and an outer shoulder 177 surrounding the surface 161. The processing chamber includes a first support frame 198 and a second support frame 199 disposed at least partially around the first support frame 198. The second support frame 199 includes arms coupled to the substrate support 106 such that raising and lowering the second support frame 199 raises and lowers the substrate support 106. A plurality of lift pins 132 are suspended from the substrate support 106. As the substrate support 106 is lowered, the lift pins 132 begin to contact the arms of the first support frame 198. As the substrate support 106 continues to be lowered, the lift pins 132 begin to contact the substrate 102 such that the lift pins 132 raise the substrate 102. The stem portion 118 (eg, shaft) of each support frame 198 , 199 extends through the bottom of the lower body 148 .

[0023]

[0031] The substrate support 106 is attached to the stem 118 of the second support frame 199 through an arm. The stem 118 of each support frame 198, 199 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices for moving and / or adjusting the support frames 198, 199 within the processing space 136. The substrate support 106 may include lift pin holes 107 disposed therein. Each of the lift pin holes 107 is sized to accommodate a respective one of a plurality of lift pins 132 for lifting the substrate 102 from the substrate support 106 before or after a deposition process is performed. The lift pins 132 may rest on lift pin stops 134 as the substrate support 106 lowers from the process position to the transfer position. In the embodiment shown in FIG. 1 , the lift pin stops 134 are part of the arms of the first support frame 198.

[0024]

[0032] The flow module 112 includes multiple gas inlets 114, multiple purge gas inlets 164, and one or more gas outlets 116. The multiple gas inlets 114 and the multiple purge gas inlets 164 are disposed on opposite sides of the flow module 112 from the one or more gas outlets 116. One or more flow guides 117a, 117b are disposed below the multiple gas inlets 114 and the one or more gas outlets 116. The one or more flow guides 117a, 117b are disposed above the purge gas inlet 164. In one or more embodiments, one or more flow guides 117A, 117B are integrated as a preheat ring. One or more liners 163 are disposed on the inner surface of the flow module 112 to protect the flow module 112 from reactive gases used during deposition and / or cleaning processes. The one or more gas inlets 114 and the one or more purge gas inlets 164 are each positioned to flow gas parallel to a top surface 150 of a substrate 102 disposed within the process space 136. The one or more gas inlets 114 are fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The one or more purge gas inlets 164 are fluidly connected to one or more purge gas sources 162. The one or more gas outlets 116 are fluidly connected to an exhaust pump 157. The one or more process gases supplied using the one or more process gas sources 151 may include one or more reactive gases (e.g., one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (e.g., one or more of nitrogen (N) and / or hydrogen (H)). The one or more purge gases supplied using the one or more purge gas sources 162 may include one or more inert gases (e.g., one or more of argon (Ar), helium (He), and / or nitrogen (N2)). The one or more cleaning gases supplied using the one or more cleaning gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl).In one embodiment, which can be combined with other embodiments, the one or more process gases include silicon phosphide (SiP) and / or phosphine (PH3), and the one or more cleaning gases include hydrochloric acid (HCl).

[0025]

[0033] The one or more gas outlets 116 further connect to or include an exhaust system 178. The exhaust system 178 fluidly connects the one or more gas outlets 116 to an exhaust pump 157. The exhaust system 178 can assist in controlled deposition of a layer on the substrate 102. The exhaust system 178 is located on an opposite side of the processing chamber 100 from the flow module 112.

[0026]

[0034] Controller 120 includes a central processing unit (CPU), memory containing instructions, and support circuits for the CPU. Controller 120 controls various items directly or through other computers and / or controllers. In one or more embodiments, controller 120 is communicatively coupled to a dedicated controller, with controller 120 functioning as a central controller.

[0027]

[0035] The controller 120 is any form of general-purpose computer processor used in industrial environments to control various substrate processing chambers and equipment, as well as sub-processors thereon or therein. The memory, or non-transitory computer-readable medium, is one or more of readily available memory such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, and LPDDR4, etc.)), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of local or remote digital storage. The support circuits of the controller 120 are coupled to the CPU (processor) to support the CPU. The support circuits include cache, power supplies, clock circuits, input / output circuits and subsystems, etc. The operational parameters (e.g., power applied to individual heat sources (e.g., lamps), process gas pressure, process gas flow rate, and / or rotational position of the substrate support 106) and operations are stored in memory as software routines that are executed or initiated to transform the controller 120 into an application-specific controller that controls the operation of the various chambers / modules described herein. The controller 120 is configured to perform any of the operations described herein. The instructions stored in memory, when executed, cause one or more of the operations described herein (e.g., steps 602, 604, 606 of method 600) to be performed.

[0028]

[0036] The various operations described herein may be performed automatically using the controller 120, or some operations may be performed automatically or manually by a user.

[0029]

[0037] The processing chamber 100 includes a plurality of internal heat sources 141, 143. Each of the plurality of internal heat sources 141, 143 is oriented substantially parallel to the surface 161 of the support surface 123 such that the longitudinal axis of each internal heat source 141, 143 is oriented at a difference of 5 degrees or less with respect to the plane of the surface 161. In one or more embodiments, the difference is 0 degrees, such that each internal heat source 141, 143 is parallel to the surface 161. The plurality of internal heat sources 141, 143 includes a first set of internal heat sources 143 below the lower window 110 and a second set of internal heat sources 141 above the upper window 108. The present disclosure contemplates that the internal heat sources 141, 143 may be oriented non-parallel to the surface 161 such that the longitudinal axis of each internal heat source 141, 143 is oriented at a difference of more than 5 degrees with respect to the plane of the surface 161.

[0030]

[0038] The processing chamber 100 includes a plurality of outer heat sources 171, 173 disposed outwardly of the inner heat sources 141, 143. Each of the plurality of outer heat sources 171, 173 is oriented non-parallel to the surface 161 of the support surface 123 such that the longitudinal axis LA1 of each outer heat source 171, 173 forms an angle of greater than 5 degrees with respect to the plane of the surface 161. The plurality of outer heat sources 171, 173 includes a first set of outer heat sources 173 below the lower window 110 and a second set of outer heat sources 171 above the upper window 108. The longitudinal axis LA1 of each of the plurality of outer heat sources 171, 173 is oriented at an angle A1 with respect to the surface 161 of the support surface 123. The angle A1 is within a range of 65 degrees to 90 degrees. This disclosure contemplates that the first set of external heat sources 173 or the second set of external heat sources 171 may be omitted.

[0031]

[0039] In one or more embodiments, the first set of internal heat sources 143 is configured to heat an internal portion of the substrate 102 from the backside of the substrate 102 (e.g., an internal backside zone) using radial light directed at the substrate 102. The internal portion may include the center of the substrate 102. The second set of internal heat sources 141 is configured to heat an internal portion of the substrate 102 from the frontside of the substrate 102 (e.g., an internal frontside zone) using radial light directed at the substrate 102.

[0032]

[0040] A first set of external heat sources 173 and a second set of external heat sources 171 below the lower window 110 .

[0033]

[0041] In one or more embodiments, the first set of external heat sources 173 is configured to heat an outer portion of the substrate 102 from the backside of the substrate 102 (e.g., an outer zone on the backside) using linear light directed at the substrate 102. The outer portion of the substrate 102 includes the outer edge surface 103 of the substrate 102. The second set of external heat sources 171 is configured to heat an outer portion of the substrate 102 (including the outer edge surface 103) from the front side of the substrate 102 (e.g., an outer zone on the front side) using linear light directed at the substrate 102.

[0034]

[0042] Each outer heat source 171, 173 of the multiple heat sources 171, 173 is directed toward one or more of the substrate support 106, the preheat rings 117A, 117B disposed outside the substrate support 106, and / or one or more liners 163 disposed outside the substrate support 106. In one or more embodiments, each outer heat source 171, 173 is oriented such that its respective longitudinal axis LA1 is oriented to extend through one or more of the surface 161 supporting the substrate 102, the outer shoulder 177, and / or the space between the substrate 102 and the outer shoulder 177. In one or more embodiments, each outer heat source 171, 173 is oriented such that its respective longitudinal axis LA1 is oriented to extend through one or more of the preheat rings 117A, 117B and / or one or more liners 163.

[0035]

[0043] A reflective sleeve 181 is disposed around each of the plurality of outer heat sources 171, 173. The end of each reflective sleeve 181 is disposed a distance D1 from the nearest portion of the lower window 110 or the upper window 108. In one or more embodiments, the distance D1 is 10 mm or greater. The end of each reflective sleeve 181 extends beyond the end of its respective outer heat source 171, 173 (e.g., beyond the end of the bulb of its respective outer heat source 171, 173). The reflective sleeve 181 facilitates directing light in a straight line toward the outer portion of the substrate 102 for targeted heating.

[0036]

[0044] Figure 2 is a schematic close-up view of the processing chamber 100 shown in Figure 1, according to one embodiment. In one or more embodiments, each external heat source 171, 173 includes a lamp, with the longitudinal axis LA1 extending through the coil of the lamp filament.

[0037]

[0045] Each reflective sleeve 181 includes a substrate 182 and an inner coating 183. The inner coating 183 has a reflectivity of 0.8 or greater. In one or more embodiments, the inner coating 183 includes one or more of gold (Au), silver (Ag), and / or one or more ceramics. Other materials are contemplated for the inner coating 183. In one or more embodiments, the substrate 182 includes a metal such as aluminum or stainless steel. Other materials are contemplated for the substrate 182 and coatings 183, 184. The material(s) of the substrate metal 182 and / or the material(s) of the coatings 183, 184 may be affected by the processing temperatures used during processing (e.g., deposition). In one or more embodiments, each reflective sleeve 181 includes an outer coating 184 similar or identical to the inner coating 183. The substrate 182 has a thickness T1 in the range of 1.0 mm to 5.00 mm. In one or more embodiments, thickness T1 is in the range of 1.8 mm to 2.2 mm, e.g., 2.0 mm. Inner coating 183 and outer coating 184 each have a thickness T2 in the range of 80 microns to 150 microns. In one or more embodiments, thickness T2 of each coating 183, 184 is in the range of 95 microns to 105 microns, e.g., 100 microns.

[0038]

[0046] The present disclosure contemplates that polished surfaces (e.g., mirror-polished surfaces) may be used in place of the inner coating 183, outer coating 184, and / or reflective coating described above. As an example, one or more inner surfaces and / or one or more outer surfaces of the substrate 182 may be mirror-polished.

[0039]

[0047] 3 is a schematic cross-sectional side view of a processing chamber 300, according to one embodiment. Processing chamber 300 is similar to processing chamber 100 and includes one or more of its aspects, features, operations, components, and / or characteristics.

[0040]

[0048] The substrate support 106 has an outer radius OR1. As described above, each outer heat source 171, 173 of the multiple heat sources 171, 173 is oriented non-parallel to the surface 161 of the support surface 123. In one or more embodiments, each outer heat source 171, 173 is oriented substantially perpendicular to the surface 161, such that the angle A1 is within a range of 85 to 90 degrees. Each outer heat source 171, 173 of the multiple heat sources 171, 173 is angled at an offset OF1 relative to the center 169 of the substrate support 106. The offset OF1 is a ratio of the outer radius OR1. The ratio is 0.65 or greater. In one or more embodiments, the ratio is 0.7 or greater. In one or more embodiments, the ratio is 0.8 or greater, for example, 1.0 or greater. In one or more embodiments, the ratio is within a range of 0.65 to 1.35.

[0041]

[0049] In the embodiment shown in FIG. 3, each inner heat source 141, 143 is oriented horizontally and each outer heat source 171, 173 is oriented vertically.

[0042]

[0050] 3, each outer heat source 171, 173 is positioned such that its respective longitudinal axis LA1 is aligned with the outer edge 103 of the substrate 102. In one or more embodiments, each of the illustrated outer heat sources 171, 173 can be moved horizontally so that its respective vertical longitudinal axis LA1 can be aligned with the outside of the outer edge 103, such as with the preheat rings 117A, 117B, one or more liners 163, and / or the flow module 112 (which can be part of one or more sidewalls of the processing chamber 300). As an example, the longitudinal axis LA1 can be oriented to heat the sidewalls of the processing chamber 300, the one or more liners 163, and / or the process gases (e.g., precursor gases).

[0043]

[0051] The present disclosure contemplates that one of the upper outer heat source 171 or the lower outer heat source 173 can be aligned with the outer end surface 103 (e.g., vertically as in FIG. 3 or at an angle as in FIGS. 1 and 2), and the other of the upper outer heat source 171 or the lower outer heat source 173 can be aligned with the outside of the outer end surface 177 (e.g., vertically as in FIG. 3 or at an angle as in FIGS. 1 and 2). For example, the upper outer heat source 171 can be aligned with the outer end surface 103 and the lower outer heat source 173, and can be aligned with the preheat rings 117a, 117b, one or more liners 163, and / or the flow module 112.

[0044]

[0052] This disclosure contemplates that the outer heat sources 171, 173 can include various forms of heat sources. For example, the upper outer heat source 171 can include a laser, an LED, and / or a resistive heater, and the lower outer heat source 173 can include a lamp.

[0045]

[0053] One or more (e.g., all) of the outer heat sources 171, 173 can be linearly movable using base motors 179. Each base motor 179 can include, for example, a linear actuator (e.g., an electric actuator). An individual base motor 179 can be used for each outer heat source 171, 173, or multiple heat sources 171, 173 can be mounted on a common plate that is moved by one or more base motors 179. The linear positions of the outer heat sources 171, 173 can be influenced by the process recipe (and thus controlled by the controller 120).

[0046]

[0054] FIG. 4 is a schematic partial top view of the processing chamber 300 shown in FIG. 3, according to one embodiment.

[0047]

[0055] Each of the first set of external heat sources 173 and the second set of external heat sources 171 includes four heat sources. Various other numbers of heat sources (e.g., one or two) are also contemplated for each set of external heat sources.

[0048]

[0056] Each of the first set of internal heat sources 143 and the second set of internal heat sources 141 includes four heat sources. Various other numbers of heat sources (e.g., one or two) are also contemplated for each set of internal heat sources.

[0049]

[0057] The number of heat sources described herein may be influenced, for example, by the temperature recipe of the process.

[0050]

[0058] FIG. 5 is a schematic partial top view of the processing chamber 300 shown in FIG. 3, according to one embodiment.

[0051]

[0059] In the embodiment shown in FIG. 5 , each of the first set of external heat sources 173 and the second set of external heat sources 171 is replaced with an arc-shaped heat source 571, 573 (e.g., an arc-shaped lamp) such that the first arc-shaped heat source 573 is below the lower window 110 and the second arc-shaped heat source 571 is above the upper window 108. Each arc-shaped heat source 571, 573 is curved and may be a circular heat source (e.g., a circular lamp). In one or more embodiments, each arc-shaped heat source 571, 573 includes a cylindrical bulb 574 and a filament 575 extending along an arc (e.g., a circle). Each cylindrical bulb 574 may be a single tube for each arc-shaped heat source 571, 573, or may be multiple arc-shaped segments. Each filament 575 can be a single filament for each arc-shaped heat source 517, 573, or can be multiple arc-shaped segments. In the embodiment shown in Figure 5, the longitudinal axis of the filament 575 (and cylindrical bulb 574) is aligned with and parallel to the outer end surface 103 of the substrate 102. The longitudinal axis of the filament 575 (and cylindrical bulb 574) can be positioned at an offset OF1. In the present disclosure, one of the arc-shaped heat sources 571, 573 can be omitted.

[0052]

[0060] 6 is a schematic cross-sectional side view of a processing chamber 600, according to one embodiment. Processing chamber 600 is similar to processing chambers 100, 300 and may include one or more of the aspects, features, components, operations, and / or characteristics thereof.

[0053]

[0061] In the embodiment shown in FIG. 6 , one or more outer arc-shaped heat sources 573 are positioned below the lower window 110. One or more reflective segments 581 are positioned partially around each of the one or more outer arc-shaped heat sources 573. The one or more reflective segments 581 can be similar to the reflective segment 181 and can include one or more aspects, features, components, operations, and / or characteristics thereof. The one or more reflective segments 581 direct heat (e.g., light) along an axis AX1. In the embodiment shown in FIG. 6 , the axis AX1 is directed toward the outer end surface 103. As described herein, other directions for the axis AX1 are also contemplated. Each of the one or more reflective segments 581 is curved and has a parabolic cross-section.

[0054]

[0062] FIG. 7 is a schematic block diagram of a method 700 for processing a substrate, according to one embodiment.

[0055]

[0063] In step 702, the method 700 includes heating a substrate positioned on a substrate support within the processing space of the chamber. The heating includes directing radiant light toward an interior portion of the substrate radially outward from one or more internal heat sources. The radiant light is directed radially outward from a bulb of each of the one or more internal heat sources.

[0056]

[0064] The heating also includes directing linear light from one or more external heat sources linearly toward an outer portion of the substrate, the outer portion including an outer edge surface of the substrate, the linear light being directed linearly along a linear axis of a filament of each of the one or more external heat sources.

[0057]

[0065] Step 704 includes flowing one or more process gases over the substrate to form one or more layers on the substrate.

[0058]

[0066] The method 700 may include heating the substrate and / or flowing one or more process gases while rotating the substrate (eg, using a substrate support).

[0059]

[0067] Step 706 includes evacuating one or more process gases.

[0060]

[0068] 8 is a schematic diagram of a graph 800 showing normalized irradiance versus horizontal position (mm) within a processing chamber, according to one embodiment. A position value of zero corresponds to the center 169 of the substrate support 106. The outer radius OR2 is the outer radius of the substrate 102.

[0061]

[0069] A first profile 801 shows the normalized irradiance of a processing chamber having the subject matter described herein.

[0062]

[0070] A second profile 802 shows the normalized irradiance of the processing chamber according to another configuration.

[0063]

[0071] As shown by comparing the first profile 801 and the second profile 802, the first profile 801 may be associated with a more uniform irradiance (and therefore a more uniform temperature profile and a more uniform deposition thickness). For example, the first profile 801 may exhibit a more uniform irradiance at the center of the substrate and at the outer radius OR2 (e.g., at the outer edge 103) compared to the second profile 802. Such uniformity facilitates adjustment of process parameters, such as the temperature at the outer portion of the substrate 102 (e.g., at the outer edge 103).

[0064]

[0072] Figure 9 is a schematic diagram of one of the lower outer heat sources 173 shown in Figure 3, according to one embodiment. The heat source 173 is linearly movable (e.g., using the base motor 179 described above).

[0065]

[0073] As one or more heat sources move relative to the plane 901 (defined by the backside 188 of the substrate support 106), the cone of illumination 902 and the irradiance intensity of the illumination change. As one or more heat sources move closer to the plane 901 (such that the distance (d) decreases), the width (y) of the cone 902 decreases and the irradiance intensity increases. As one or more heat sources move farther from the plane 901, the width (y) of the cone 902 increases and the irradiance intensity decreases. The height (x) is equal to the distance (d). The incident irradiance intensity (Iy) can be determined using Equation 1 below: TIFF2025539221000002.tif10170

[0066]

[0074] Ip is the peak intensity of one or more heat sources. The factor (h) can be determined using Equation 2 below. TIFF2025539221000003.tif10170

[0067]

[0075] The controller 120 can determine, for example, using Equations 1 and 2, the distance (d) that one or more heat sources should linearly travel to facilitate reaching a target incident irradiance intensity (Iy) during processing. The target incident irradiance intensity (Iy) can be determined by the controller 120, for example, from a process recipe. Such a method facilitates adjusting irradiance intensity for temperature adjustment (e.g., at outer portions of the substrate support 106 and / or outer portions of the substrate 102).

[0068]

[0076] Advantages of the present disclosure include reduced or eliminated temperature non-uniformity, improved center-to-edge deposition uniformity, the ability to adjust (and uniform) process parameters (e.g., temperature, pressure, and gas flow rates) at outer portions of the substrate, including the outer edge, precise adjustment of process temperatures at each portion of the substrate (including during substrate rotation), reduced heat loss and power consumption, modular adjustment, and target temperature achievement.

[0069]

[0077] As an example, the ratios and / or configurations described herein of the inner heat sources 141, 143, outer heat sources 171, 173, outer heat sources 571, 573, reflective sleeve 181, and / or reflective sleeve 581 facilitate precisely tailoring the heating (e.g., temperature) of the outer portions (including outer edge surface 103) of the substrate 102 relative to the inner portions and other chamber components. Such tailoring is facilitated while facilitating the reduction or elimination of heat loss to other chamber components, the reduction or elimination of power waste, and the reduction or elimination of power consumption.

[0070]

[0078] As another example, embodiments of the present disclosure are modular and can be used for a variety of processing (eg, deposition) and / or cleaning steps, including a variety of process parameters.

[0071]

[0079] It is contemplated that one or more aspects disclosed herein may be combined. By way of example, one or more aspects, features, components, operations, and / or properties of the processing chamber 100, the heat source configurations shown in Figures 1 and 2, the processing chamber 300, the heat source configurations shown in Figures 3 and 4, the external heat sources 571, 573, the heat source configurations shown in Figures 3 and 6, the reflector segment 581, the method 700, and / or the method of Figure 9 may be combined. Furthermore, it is contemplated that one or more aspects disclosed herein may include some or all of the advantages described above.

[0072]

[0080] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of the present disclosure being determined by the claims that follow.

Claims

1. 1. A processing chamber applicable for use in semiconductor manufacturing, comprising: Lower window; an upper window that, together with said lower window, at least partially defines an interior space; a substrate support disposed within the interior space, the substrate support including a support surface; one or more internal heat sources, each oriented substantially parallel to a surface of the support surface; and one or more outer heat sources positioned outwardly from the one or more inner heat sources, each oriented non-parallel to the surface of the support surface; A processing chamber comprising:

2. the one or more internal heat sources include a first set of internal heat sources below the lower window and a second set of internal heat sources above the upper window; the one or more external heat sources include a first set of external heat sources below the lower window and a second set of external heat sources above the upper window; each inner heat source and each outer heat source includes a lamp configured to emit infrared radiation (IR) light; The processing chamber of claim 1 .

3. The processing chamber of claim 1 , wherein each outer heat source of the one or more outer heat sources is oriented at an angle relative to the surface of the support surface.

4. The processing chamber of claim 3 , wherein the angle is in the range of 65 to 90 degrees.

5. The processing chamber of claim 1 , wherein a reflective sleeve is disposed around each outer heat source of the one or more outer heat sources.

6. The processing chamber of claim 5 , wherein each reflective sleeve comprises a substrate and an inner coating.

7. 7. The processing chamber of claim 6, wherein the substrate comprises stainless steel or aluminum, and the inner coating comprises one or more of gold (Au), silver (Ag), and / or one or more ceramics.

8. 7. The process chamber of claim 6, wherein an end of each reflective sleeve is positioned a distance from the lower window or a portion of the upper window closest to the lower window, the distance being 10 mm or greater.

9. The processing chamber of claim 1 , wherein each outer heat source of the one or more outer heat sources is linearly movable using a base motor.

10. the one or more external heat sources: a first set of one or more external heat sources above the upper window, each heat source in the first set comprises a laser, a light emitting diode (LED), or a resistive heater; each heat source in the first set is directed toward the substrate support; a first set of one or more external heat sources; a second set of one or more external heat sources below the lower window, each heat source in the second set includes a lamp; each heat source in the second set is directed toward one or more of a preheat ring disposed outside the substrate support, one or more liners disposed outside the substrate support, or one or more sidewalls of the processing chamber; a second set of one or more external heat sources; The processing chamber of claim 1 , comprising:

11. 1. A processing chamber applicable for use in semiconductor manufacturing, comprising: Lower window, an upper window that, together with said lower window, at least partially defines an interior space; a substrate support disposed in the interior space, the substrate support including an outer radius and a support surface; and one or more heat sources, each aligned at an offset relative to a center of the substrate support, the offset being a percentage of the outer radius, the ratio being 0.65 or greater; A processing chamber comprising:

12. 12. The processing chamber of claim 11, wherein each of the one or more heat sources comprises an arc-shaped lamp having a cylindrical bulb envelope and a filament having a longitudinal axis aligned with the offset.

13. 12. The processing chamber of claim 11, wherein each heat source of the one or more heat sources is oriented non-parallel to a surface of the support surface, and wherein the processing chamber further comprises a plurality of inner heat sources disposed inside the one or more heat sources, each inner heat source of the plurality of inner heat sources being oriented substantially parallel to the surface of the support surface.

14. The processing chamber of claim 13 , wherein the ratio is greater than or equal to 0.

7.

15. 14. The processing chamber of claim 13, wherein each heat source and each internal heat source comprises a lamp configured to emit infrared radiation (IR) light.

16. The processing chamber of claim 11 , wherein each heat source of the one or more heat sources is oriented at an angle relative to a surface of the support surface.

17. 17. The processing chamber of claim 16, wherein the angle is in the range of 65 degrees to 90 degrees.

18. 1. A method of processing a substrate, comprising: heating a substrate positioned on a substrate support within a processing space of the chamber, directing radial light radially outward from one or more internal heat sources onto an interior portion of the substrate; and directing linear light from one or more external heat sources linearly onto an outer portion of the substrate; heating the substrate, flowing one or more process gases over the substrate to form one or more layers on the substrate; exhausting the one or more process gases; A method comprising:

19. The method of claim 18 , wherein the outer portion comprises an outer edge surface of the substrate.

20. the radiating light is directed radially outward from a bulb of each inner heat source of the one or more inner heat sources; the linear light is directed linearly along a linear axis of a filament of each of the one or more outer heat sources; 20. The method of claim 18.

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