CAPACITOR COMPONENT, METHOD FOR MANUFACTURING THE SAME, AND INTEGRATED CIRCUIT CHIP PACKAGE COMPRISING THE SAME

Abstract

The present invention provides a capacitor component suitable for high-frequency environments and capable of being miniaturized, a manufacturing method thereof, and an integrated circuit chip package including the same. The capacitor component includes an anodized oxide film body having a plurality of pores, a first wire metal layer disposed on the inner walls of the pores, a dielectric layer disposed on the first wire metal layer, a second wire metal layer disposed on the dielectric layer, and a lower common electrode layer connected to the first wire metal layer at the bottom of the body.

Description

[Technical Field]

[0001] The present invention relates to a capacitor component, a method for manufacturing the same, and an integrated circuit chip package including the same. [Background technology]

[0002] Capacitors stabilize the flow of electricity within circuits by collecting and discharging electricity from the circuits of information and communication devices and various electronic products. A stable supply of energy is an important element in various electronic products, including information and communication devices. Generally, this function is performed by a capacitor.

[0003] Capacitors are divided into various types depending on the dielectric, and among them, MLCC (Multi-Layer Ceramic Capacitor) is currently the most widely used in the electronics industry because it is easier to realize a smaller form factor than existing capacitors.

[0004] However, it is virtually impossible to reduce the size of MLCC, which is the mainstream in the current capacitor market, to below 0.2 mm (200 μm).Although MLCC is a promising technology that is expected to see a continuous increase in market size, it has reached its limit in meeting the needs of customers who require capacitors that are even smaller and have excellent electrical properties.

[0005] In particular, MLCCs have a multilayer structure, which means that current flows in quickly and then is difficult to release in high-frequency environments. For this reason, the development of capacitors suitable for high-frequency environments is urgently needed. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Korean Patent Registration No. 10-2192426 [Patent Document 2] Korean Patent Registration No. 10-2189805 Summary of the Invention [Problem to be solved by the invention]

[0007] Therefore, the present invention has been made to solve the problems of the conventional technology, and its object is to provide a capacitor component that is suitable for high frequency environments and can be miniaturized, a manufacturing method thereof, and an integrated circuit chip package including the same. [Means for solving the problem]

[0008] To achieve the above object, a capacitor component according to the present invention includes an anodized film body having a plurality of pores, a first wire metal layer formed on the inner walls of the pores, a dielectric layer formed on the first wire metal layer, a second wire metal layer formed on the dielectric layer, and a lower common electrode layer connected to the first wire metal layer at the bottom of the body.

[0009] In addition, an end of the first wire metal layer protrudes from the lower portion of the anodized film body and is embedded in the lower common electrode layer.

[0010] Meanwhile, a capacitor component according to the present invention includes a lower common electrode layer, an anodized oxide film body having a plurality of pores formed on the common electrode layer, and a capacitor wire including a capacitor structure formed in the pores, and an end of the capacitor wire is connected to the lower common electrode layer.

[0011] The capacitor wire also includes a first wire metal layer provided on the inner wall of the pore, a dielectric layer provided on the first wire metal layer, and a second wire metal layer provided on the dielectric layer.

[0012] In addition, the end of the capacitor wire protrudes from the lower portion of the anodized film body and is embedded in the lower common electrode layer.

[0013] In addition, the capacitor wire includes a surface portion provided on the surface of the anodized film body, a cylindrical portion provided on the inner wall of the pore, and a bottom portion formed continuously with the cylindrical portion, protruding to a lower portion of the body, and embedded in the lower common electrode layer.

[0014] The lower common electrode layer extends horizontally, and the capacitor wires extend vertically and are spaced apart horizontally.

[0015] Meanwhile, a capacitor component according to the present invention includes an anodized oxide film body provided on the upper side of the lower common electrode layer and having a plurality of pores, a capacitor wire including a capacitor structure formed in at least a portion of the pores, and a functional wire including a functional structure formed in at least a portion of the pores, and an end of the capacitor wire is connected to the lower common electrode layer.

[0016] The functional structure is a metal material.

[0017] The functional structure is an insulating material.

[0018] Additionally, the ends of the functional wires are closed with a patternable material.

[0019] Meanwhile, a capacitor component according to the present invention includes an upper common electrode layer, a lower common electrode layer, an anodized oxide film body having a plurality of pores disposed between the upper common electrode layer and the lower common electrode layer, and a capacitor wire including a capacitor structure formed in the pores, wherein an end of the capacitor wire is connected to the lower common electrode layer.

[0020] The capacitor wire also includes a first wire metal layer provided on the inner wall of the pore, a dielectric layer provided on the first wire metal layer, and a second wire metal layer provided on the dielectric layer, with the upper metal layer provided on top of the second wire metal layer.

[0021] Meanwhile, an integrated circuit chip package according to the present invention includes a package substrate, a semiconductor chip mounted on the package substrate, a molding part for protecting the semiconductor chip, and a capacitor component provided in or on the package substrate, the capacitor component including a lower common electrode layer, an anodized oxide film body provided on the common electrode layer and having a plurality of pores, and a capacitor wire including a capacitor structure formed in the pores, and an end of the capacitor wire is connected to the lower common electrode layer.

[0022] Meanwhile, a method for manufacturing a capacitor component according to the present invention includes the steps of providing an anodized oxide film body, filling pores in the anodized oxide film body with a capacitor structure to form a capacitor wire, forming an upper common electrode layer on top of the capacitor wire, and removing a portion of the anodized oxide film body to form a lower common electrode layer so that a portion of an end of the capacitor wire is embedded. [Effects of the Invention]

[0023] The present invention provides a capacitor component that is suitable for high frequency environments and can be miniaturized, a method for manufacturing the same, and an integrated circuit chip package including the same. [Brief explanation of the drawings]

[0024] [Figure 1] 1 is a cross-sectional view of a capacitor component according to a first preferred embodiment of the present invention. [Figure 2] 1 is a cross-sectional view of a capacitor wire according to a first preferred embodiment of the present invention. [Figure 3] FIG. 2 is an enlarged view showing a portion A in FIG. 1. [Figure 4a] 2A to 2C are diagrams illustrating a method for manufacturing a capacitor component according to the first preferred embodiment of the present invention. [Figure 4b] 2A to 2C are diagrams illustrating a method for manufacturing a capacitor component according to the first preferred embodiment of the present invention. [Figure 5a] 2A to 2C are diagrams illustrating a method for manufacturing a capacitor component according to the first preferred embodiment of the present invention. [Figure 5b] 2A to 2C are diagrams illustrating a method for manufacturing a capacitor component according to the first preferred embodiment of the present invention. [Figure 6a] 2A to 2C are diagrams illustrating a method for manufacturing a capacitor component according to the first preferred embodiment of the present invention. [Figure 6b] 2A to 2C are diagrams illustrating a method for manufacturing a capacitor component according to the first preferred embodiment of the present invention. [Figure 7a] 2A to 2C are diagrams illustrating a method for manufacturing a capacitor component according to the first preferred embodiment of the present invention. [Figure 7b] 2A to 2C are diagrams illustrating a method for manufacturing a capacitor component according to the first preferred embodiment of the present invention. [Figure 8a] 2A to 2C are diagrams illustrating a method for manufacturing a capacitor component according to the first preferred embodiment of the present invention. [Figure 8b] 2A to 2C are diagrams illustrating a method for manufacturing a capacitor component according to the first preferred embodiment of the present invention. [Figure 9a] 2A to 2C are diagrams illustrating a method for manufacturing a capacitor component according to the first preferred embodiment of the present invention. [Figure 9b] 2A to 2C are diagrams illustrating a method for manufacturing a capacitor component according to the first preferred embodiment of the present invention. [Figure 10] FIG. 4 is a cross-sectional view of a capacitor component according to a second preferred embodiment of the present invention. [Figure 11a] 5A to 5C are diagrams illustrating a method for manufacturing a capacitor component according to a second preferred embodiment of the present invention. [Figure 11b] 5A to 5C are diagrams illustrating a method for manufacturing a capacitor component according to a second preferred embodiment of the present invention. [Figure 12a] 5A to 5C are diagrams illustrating a method for manufacturing a capacitor component according to a second preferred embodiment of the present invention. [Figure 12b] 5A to 5C are diagrams illustrating a method for manufacturing a capacitor component according to a second preferred embodiment of the present invention. [Figure 13a] 5A to 5C are diagrams illustrating a method for manufacturing a capacitor component according to a second preferred embodiment of the present invention. [Figure 13b] 5A to 5C are diagrams illustrating a method for manufacturing a capacitor component according to a second preferred embodiment of the present invention. [Figure 14a] 5A to 5C are diagrams illustrating a method for manufacturing a capacitor component according to a second preferred embodiment of the present invention. [Figure 14b] 5A to 5C are diagrams illustrating a method for manufacturing a capacitor component according to a second preferred embodiment of the present invention. [Figure 15] 5A to 5C are diagrams illustrating a method for manufacturing a capacitor component according to a second preferred embodiment of the present invention. [Figure 16] FIG. 10 is a cross-sectional view of a capacitor component according to a third preferred embodiment of the present invention. [Figure 17a] 10A to 10C are diagrams illustrating a method for manufacturing a capacitor component according to a third preferred embodiment of the present invention. [Figure 17b] 10A to 10C are diagrams illustrating a method for manufacturing a capacitor component according to a third preferred embodiment of the present invention. [Figure 18a] 10A to 10C are diagrams illustrating a method for manufacturing a capacitor component according to a third preferred embodiment of the present invention. [Figure 18b] 10A to 10C are diagrams illustrating a method for manufacturing a capacitor component according to a third preferred embodiment of the present invention. [Figure 19a] 10A to 10C are diagrams illustrating a method for manufacturing a capacitor component according to a third preferred embodiment of the present invention. [Figure 19b] 10A to 10C are diagrams illustrating a method for manufacturing a capacitor component according to a third preferred embodiment of the present invention. [Figure 20a] 10A to 10C are diagrams illustrating a method for manufacturing a capacitor component according to a third preferred embodiment of the present invention. [Figure 20b] 10A to 10C are diagrams illustrating a method for manufacturing a capacitor component according to a third preferred embodiment of the present invention. [Figure 21] 10A to 10C are diagrams illustrating a method for manufacturing a capacitor component according to a third preferred embodiment of the present invention. [Figure 22] 1 is a cross-sectional view of an integrated circuit chip package incorporating a capacitor component according to a preferred embodiment of the present invention; DETAILED DESCRIPTION OF THE INVENTION

[0025] The following merely exemplifies the principles of the present invention. Accordingly, those skilled in the art will be able to embody the principles of the invention and invent various devices that fall within the concept and scope of the invention, even if not explicitly described or shown herein. Furthermore, all conditional terms and embodiments listed herein are expressly intended, in principle, only for the purpose of enabling the concept of the invention to be understood, and should not be understood as being limited to the embodiments and conditions specifically listed in this specification.

[0026] The above objects, features, and advantages will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, which will enable those skilled in the art to easily implement the technical ideas of the invention.

[0027] The embodiments described herein will be explained with reference to cross-sectional views and / or perspective views that are idealized exemplary views of the present invention. The thicknesses of films and regions shown in these drawings are exaggerated for the purpose of effectively explaining the technical content. The shapes of the exemplary views may vary due to manufacturing techniques and / or tolerances. Furthermore, the number of molded objects shown in the drawings is only a partial illustration. Therefore, the embodiments of the present invention are not limited to the specific shapes shown in the drawings, and also include changes in shapes that occur during the manufacturing process.

[0028] Capacitor component 100 according to the first embodiment First, a capacitor component 100 according to a first preferred embodiment of the present invention will be described.

[0029] FIG. 1 is a cross-sectional view of a capacitor component 100 according to a first preferred embodiment of the present invention, FIG. 2 is a cross-sectional view of a capacitor wire 130 according to a first preferred embodiment of the present invention, FIG. 3 is an enlarged view of part A in FIG. 1, and FIGS. 4a to 9b are diagrams for explaining the capacitor component 100 according to the first preferred embodiment of the present invention.

[0030] 1 to 3, the capacitor component 100 includes an upper common electrode layer 110, a lower common electrode layer 120, an anodized film body 140 having a plurality of pores P disposed between the upper common electrode layer 110 and the lower common electrode layer 120, and a capacitor wire 130 including capacitor structures cs formed in the pores P, with the end of the capacitor wire 130 connected to the lower common electrode layer 120.

[0031] The upper common electrode layer 110 and the lower common electrode layer 120 are provided to extend in the horizontal direction, and the capacitor wire 130 is provided to extend in the vertical direction between the upper common electrode layer 110 and the lower common electrode layer 120 .

[0032] An anodized film body 140 is provided between the upper common electrode layer 110 and the lower common electrode layer 120. The capacitor wires 130 extend vertically within the pores P of the anodized film body 140, and a plurality of the capacitor wires 130 are provided spaced apart horizontally.

[0033] The end of the capacitor wire 130 protrudes from the bottom of the anodized film body 140 and is embedded in the lower common electrode layer 120 .

[0034] The capacitor wire 130 includes a first wire metal layer 131 provided on the inner wall of the pore P, a dielectric layer 133 provided on the first wire metal layer 131, and a second wire metal layer 135 provided on the dielectric layer 133. The dielectric layer 133 is interposed between the first wire metal layer 131 and the second wire metal layer 135.

[0035] The first wire metal layer 131, the dielectric layer 133, and the second wire metal layer 135 are sequentially stacked on the inner wall of the pore P. The first wire metal layer 131 is formed conformally on the inner wall of the pore P along the inner wall of the pore P. The first wire metal layer 131 is provided in the shape of a cylinder that is open at the top and closed at the bottom, and the dielectric layer 133 and the second wire metal layer 135 are provided on the first wire metal layer 131.

[0036] The first wire metal layer 131 and the second wire metal layer 135 may each be composed of a metal film made of a first metal, a metal oxide film containing the first metal, a metal nitride film containing the first metal, a metal oxynitride film containing the first metal, or a combination thereof. In an exemplary embodiment, the first metal may be Ti, Co, Nb, or Sn. In an exemplary embodiment, the first wire metal layer 131 and the second wire metal layer 135 may each include Ti, Ti oxide, Ti nitride, Ti oxynitride, Co, Co oxide, Co nitride, Co oxynitride, Nb, Nb oxide, Nb nitride, Nb oxynitride, Sn, Sn oxide, Sn nitride, Sn oxynitride, or a combination thereof. For example, the first wire metal layer 131 and the second wire metal layer 135 may each be composed of TiN, CoN, NbN, SnO2, or a combination thereof.

[0037] The dielectric layer 133 may be made of a metal oxide film containing a second metal. The second metal may be Hf, Zr, Nb, Ce, or Ti. In an exemplary embodiment, the dielectric layer 133 may be made of Al2O3, ZrO2, HfO2, Nb2O5, CeO2, or TiO2. For example, the first wire metal layer 131 and the second wire metal layer 135 may be made of TiN films, and the dielectric layer 133 may be made of a multi-layer structure in which Al2O3 films and ZrO2 films are alternately stacked multiple times.

[0038] The capacitor wire 130 includes a surface portion wa provided on the surface of the anodic oxide film body 140, a cylindrical surface portion wb provided on the inner wall of the pore P, and a bottom portion wc formed continuously with the cylindrical surface portion wb, protruding below the anodic oxide film body 140, and embedded in the lower common electrode layer 120. Here, the bottom portion wc indicates the rounded end of the capacitor wire 130.

[0039] Adjacent capacitor wires 130 are connected to each other while sharing a surface portion wa. The portion embedded in the lower common electrode layer 120 may include at least a portion of the cylindrical surface portion wb, including the bottom portion wc. In the capacitor wire 130, the portion located inside the pore P is the cylindrical surface portion wb, and the surface portion wa and the bottom portion wc are portions located outside the pore P.

[0040] The capacitor wire 130 has a length of 1 μm to 200 μm and a diameter of 10 nm to 1 μm. Because the capacitor wire 130 is long compared to its small diameter, it is configured in the form of a wire. The pitch between adjacent capacitor wires 130 is 20 nm to 200 nm. Thus, the capacitor component 100 includes a plurality of capacitor wires 130 densely arranged at a fine pitch, significantly improving capacitance per unit volume.

[0041] The capacitor wire 130 has a surface portion wa, a columnar surface portion wb, and a bottom portion wc that are continuously formed. The surface portion wa is provided on the surface of the anodized film body 140 in the form of a horizontally extending surface, the columnar surface portion wb is provided on the inner wall of the pore P in the form of a column that protrudes vertically from the surface portion wa, and the bottom portion wc protrudes from the anodized film body 140 and is embedded in the lower common electrode layer 120 to anchor the capacitor wire 130 to the lower common electrode layer 120.

[0042] 3, the ends of the capacitor wires 130 are embedded and connected to the lower common electrode layer 120. The bottom portions wc of the capacitor wires 130 are formed in a hemispherical shape. Because the bottom portions wc are embedded in the lower common electrode layer 120, the bottom portions wc are fully involved in the flow of current through the lower common electrode layer 120. Each capacitor wire 130 is connected to the lower common electrode layer 120. Therefore, quick electrical connection to each capacitor wire 130 is possible via the lower common electrode layer 120 in a high frequency environment.

[0043] The capacitor component 100 according to the first embodiment of the present invention may have a thickness of 10 μm to 200 μm in the vertical direction. The capacitor component 100 significantly improves capacitance per unit volume by forming capacitor structures cs in the pores P of the anodic oxide film body 140. For example, the pores P are densely arranged in a relatively small area, which significantly improves capacitance per unit area. For example, in the decoupling capacitor 100, 2 The capacitance per capacitor may be at least 1000 nF.

[0044] 4a to 9b, a method for manufacturing the capacitor component 100 according to the first preferred embodiment of the present invention will be described below. In the following description of the manufacturing method, the configuration of the capacitor component 100 according to the first embodiment will become clearer.

[0045] The manufacturing method of the capacitor component 100 according to the first embodiment includes the steps of (i) providing an anodized film body 140, (ii) filling the pores P of the anodized film body 140 with capacitor structures cs to form capacitor wires 130, (iii) forming an upper common electrode layer 110, and (iv) forming a lower common electrode layer 120.

[0046] First, the step of (i) providing an anodized oxide film body 140 is performed.

[0047] FIG. 4a is a cross-sectional perspective view of the base metal M after anodizing, and FIG. 4b is a cross-sectional view of the base metal M after anodizing.

[0048] The anodized film body 140 refers to a film formed by anodizing the base metal M, and the pores P refer to holes formed during the process of anodizing the base metal M to form an anodized film. For example, if the base metal M is aluminum (Al) or an aluminum alloy, an anodized film made of aluminum oxide (Al2O3) is formed on the surface of the base metal M when the base metal M is anodized. However, the base metal M is not limited thereto and may include Ta, Nb, Ti, Zr, Hf, Zn, W, Sb, or alloys thereof. The anodized film formed as described above is vertically divided into a barrier layer 143 without pores P formed therein and a porous layer 141 with pores P formed therein. Crown protrusions CD are formed on the upper surface of the porous layer 141. The upper surface of each pore P has a groove shape, and the grooves overlap with adjacent grooves to form crown protrusions CD. The crown protrusion CD includes sharp portions, which may be structurally weak points when depositing the capacitor structure CS using atomic layer deposition (ALD).

[0049] Referring to FIG. 5a, an anodized film body 140 from which the base metal M has been removed is prepared.

[0050] After anodization, the base metal M is removed, leaving only the anodized film body 140 made of aluminum oxide (Al2O3). The anodized film body 140 includes a barrier layer 143 and a porous layer 141. The anodized film body 140 may be formed with a structure in which the barrier layer 143 formed during anodization remains intact, sealing either the upper or lower ends of the pores P. The pores P have a length of 1 μm to 200 μm and a diameter of 10 nm to 1 μm. The pitch between adjacent pores P is 20 nm to 200 nm.

[0051] In the present invention, since the pores P of the anodized film body 140 are used, a separate process for forming through-holes is not required. In addition, since the capacitor wire 130 is formed using the pores P of the anodized film body 140, a high capacitance per unit area can be achieved.

[0052] The anodic oxide film has a thermal expansion coefficient of 2 to 3 ppm / °C. This means that there is little thermal deformation even in high-temperature environments. Therefore, even if the temperature rises to a high temperature in a high-frequency environment, there is no change in the capacitance of the capacitor.

[0053] Next, (ii) a step of filling the pores P of the anodic oxide film body 140 with the capacitor structure cs to form the capacitor wire 130 is performed.

[0054] Here, the capacitor structure cs includes a first wire metal layer 131 , a dielectric layer 133 and a second wire metal layer 135 .

[0055] 5b, the anodized film body 140 is attached to a substrate S using a bonding layer 160. The substrate S may be made of a semiconductor or glass. In an exemplary embodiment, the substrate S may be made of Si.

[0056] Thereafter, a first wire metal layer 131 is formed on the anodized film body 140. The first wire metal layer 131 can be formed by a deposition process (CVD, PVD, ALD). Preferably, the first wire metal layer 131 is deposited using atomic layer deposition (ALD). The pores P are configured in the form of wells that are open at the top and closed at the bottom, and the first wire metal layer 131 is conformally coated along the inner walls of the pores P. The first wire metal layer 131 can be formed to a thickness of 1 nm to 100 nm.

[0057] Since the first wire metal layer 131 is formed along the inner wall of the rounded end of the pore P, the distribution of the charge filled in the first wire metal layer 131 is uniform overall. Unlike the preferred embodiment of the present invention, in the comparative example in which a capacitor structure is formed on the inner wall of the through hole after etching the insulating film to form a through hole, the metal layer is formed in an angular shape on the end side, which may cause non-uniformity in the charge distribution in the angular part on the end side.

[0058] The first wire metal layer 131 may be a metal film made of a first metal, a metal oxide film containing the first metal, a metal nitride film containing the first metal, a metal oxynitride film containing the first metal, or a combination thereof, where the first metal may be Ti, Co, Nb, or Sn.

[0059] 6a, a dielectric layer 133 is formed on the first wire metal layer 131. The dielectric layer 133 can be formed through a deposition process (CVD, PVD, ALD). Preferably, the dielectric layer 133 is deposited using atomic layer deposition (ALD). The already deposited first wire metal layer 131 is configured in the form of a well that is open at the top and closed at the bottom, and the dielectric layer 133 is conformally coated along the inner wall of the first wire metal layer 131. The dielectric layer 133 can be formed to a thickness of 1 nm to 100 nm.

[0060] The dielectric layer 133 may be made of a metal oxide film containing a second metal, which may be Hf, Zr, Nb, Ce, or Ti.

[0061] Next, referring to FIG. 6b, a second wire metal layer 135 is formed on the dielectric layer 133. The second wire metal layer 135 can be formed by a deposition process (CVD, PVD, ALD). Preferably, the second wire metal layer 135 is deposited using atomic layer deposition (ALD). The previously deposited dielectric layer 133 is configured in the form of a well that is open at the top and closed at the bottom, and the second wire metal layer 135 is conformally coated along the inner wall of the dielectric layer 133. The second wire metal layer 135 can be formed to a thickness of 1 nm to 100 nm.

[0062] The second wire metal layer 135 may be formed by filling all of the remaining space of the pores P coated with the dielectric layer 133. Alternatively, unlike the illustration, the second wire metal layer 135 may be formed by being coated in the form of a well that is open at the top and closed at the bottom, thereby incompletely filling the pores P.

[0063] The second wire metal layer 135 may be a metal film made of a first metal, a metal oxide film containing the first metal, a metal nitride film containing the first metal, a metal oxynitride film containing the first metal, or a combination thereof, where the first metal may be Ti, Co, Nb, or Sn.

[0064] As described above, the capacitor structures cs are filled into the pores P to form the capacitor wires 130. The capacitor wires 130 are formed at a high density with a narrow pitch, which can significantly improve the capacitance per unit volume.

[0065] Next, the step (iii) of forming the upper common electrode layer 110 is carried out.

[0066] 7a, the upper common electrode layer 110 is formed on the second wire metal layer 135. The upper common electrode layer 110 may be made of silver (Ag), nickel (Ni), copper (Cu), tin (Sn), indium tin oxide (ITO), palladium (Pd), or an alloy thereof, but the present invention is not limited thereto. Alternatively, the upper common electrode layer 110 may be formed of the same material as the first wire metal layer 131 and / or the second wire metal layer 135. Alternatively, the upper common electrode layer 110 may be made of a metal film made of a first metal, a metal oxide film containing the first metal, a metal nitride film containing the first metal, a metal oxynitride film containing the first metal, or a combination thereof. Here, the first metal may be Ti, Co, Nb, or Sn.

[0067] Thereafter, the bonding layer 160 and the substrate S are removed, as shown in FIG. 7b.

[0068] The previously fabricated one is then inverted as shown in FIG. 8a and a substrate S is newly attached using a bonding layer 160 as shown in FIG. 8b.

[0069] 9a, a portion of the anodic oxide film body 140 is then removed. Only a portion of the anodic oxide film body 140 is wet-etched using a solution that reacts only with the anodic oxide film, thereby exposing the ends of the capacitor wires 130 so that they protrude from the anodic oxide film body 140. More specifically, by removing a portion of the anodic oxide film body 140 using the wet solution, the bottom portions wc of the capacitor wires 130 protrude from the anodic oxide film body 140.

[0070] Next, step (iv) of forming the lower common electrode layer 120 is performed.

[0071] 9b, the lower common electrode layer 120 is formed in the area where the portion of the anodic oxide film body 140 has been removed. As a result, the bottom portion wc of the capacitor wire 130 is embedded in the lower common electrode layer 120. Here, a portion of the cylindrical portion wb of the capacitor wire 130 may also be embedded in the lower common electrode layer 120.

[0072] The bottom portion wc of the capacitor wire 130 is embedded in the lower common electrode layer 120 and is not exposed to the outside due to the lower common electrode layer 120. The lower common electrode layer 120 is formed to cover the end portion of the capacitor wire 130 protruding from the anodized film body 140, which has the advantage of improving bonding strength.

[0073] The lower common electrode layer 120 may be made of silver (Ag), nickel (Ni), copper (Cu), tin (Sn), indium tin oxide (ITO), palladium (Pd), or an alloy thereof, but the present invention is not limited thereto. Alternatively, the lower common electrode layer 120 may be formed of the same material as the first wire metal layer 131 and / or the second wire metal layer 135. Alternatively, the lower common electrode layer 120 may be made of a metal film made of a first metal, a metal oxide film containing the first metal, a metal nitride film containing the first metal, a metal oxynitride film containing the first metal, or a combination thereof. Here, the first metal may be Ti, Co, Nb, or Sn.

[0074] Substrate S and bonding layer 160 are then removed to complete capacitor component 100 shown in FIG.

[0075] As described above, the capacitor component 100 according to the first preferred embodiment of the present invention has vertically extending capacitor wires 130 densely arranged between the horizontally extending upper common electrode layer 110 and the horizontally extending lower common electrode layer 120, thereby significantly improving the capacitance per unit volume and quickly stabilizing the electrical flow within the circuit in a high-frequency environment.

[0076] Furthermore, since the capacitor wire 130 is provided in the pores P of the anodized film body 140, the inherent characteristics are maintained without change even in a high temperature environment.

[0077] In addition, since the end of the capacitor wire 130 is embedded in the lower common electrode layer 120, the bonding strength with the lower common electrode layer 120 is improved, and the thermal energy generated in the capacitor wire 130 can be easily dissipated and removed to the lower common electrode layer 120.

[0078] Capacitor component 100 according to the second embodiment Next, a second embodiment of the present invention will be described. The following description will focus on the distinctive components compared to the first embodiment, but will omit a description of components that are the same as or similar to those of the first embodiment.

[0079] FIG. 10 is a cross-sectional view of a capacitor component 100 according to the second preferred embodiment of the present invention, and FIGS. 11a to 15 are diagrams for explaining a method for manufacturing the capacitor component 100 according to the second preferred embodiment of the present invention.

[0080] The capacitor component 100 according to the second embodiment includes an anodized film body 140 provided on top of a lower common electrode layer 120 and having a plurality of pores P, a capacitor wire 130 including capacitor structures cs formed in at least a portion of the pores P, and a functional wire 150 including functional structures fs formed in at least a portion of the pores P, and an end of the capacitor wire 130 is connected to the lower common electrode layer 120.

[0081] The functional wire 150 is formed by filling the pores P with a functional structure fs. Here, the functional structure fs may be a metal material or an insulating material.

[0082] When the functional structure fs is made of a metal material, it can help dissipate heat from the capacitor wire 130 or protect the capacitor wire 130 from surrounding signal interference.

[0083] Meanwhile, when the functional structure fs is an insulating material, it can help to strengthen the physical properties of the anodic oxide film body 140. By filling the inside of the pores P with an insulating material, there is an advantage that the overall physical rigidity of the anodic oxide film body 140 is improved compared to a structure in which the pores P remain as they are.

[0084] The functional wires 150 may be positioned around the capacitor wires 130. In this case, the functional wires 150 may be positioned on the outside, with the capacitor wires 130 positioned inside. Alternatively, the functional wires 150 may be positioned between the capacitor wires 130. Alternatively, the functional wires 150 may be positioned in a form surrounded by the capacitor wires 130.

[0085] Unlike the capacitor wire 130, the end of which partially protrudes from the anodized film body 140, the functional wire 150 does not protrude from the anodized film body 140 but is provided inside the anodized film body 140.

[0086] A patternable material 153 is provided on one end of the functional wire 150. The end of the functional wire 150 is closed by the patternable material 153. The patternable material 153 is an insulating material that closes the end of the pores P filled with the functional structures fs to prevent the functional structures fs from leaking out and protect the functional structures fs from the outside. The patternable material 153 includes, but is not limited to, photoresist.

[0087] 11a to 15, a method for manufacturing a capacitor component 100 according to a second preferred embodiment of the present invention will be described. In the following description of the manufacturing method, the configuration of the capacitor component 100 according to the second embodiment may become clearer.

[0088] The manufacturing method of the capacitor component 100 according to the second embodiment includes the steps of (i) providing an anodized film body 140, (ii) filling the pores P of the anodized film body 140 with capacitor structures cs to form capacitor wires 130, (iii) forming an upper common electrode layer 110, (iv) filling the pores P of the anodized film body 140 with functional structures fs to form functional wires 150, and (v) forming a lower common electrode layer 120.

[0089] First, the step of (i) providing an anodized oxide film body 140 is performed.

[0090] Referring to FIG. 11a, an anodized film body 140 from which the base metal M has been removed is prepared.

[0091] After anodization, the base metal M is removed, leaving only the anodized film body 140 made of aluminum oxide (Al2O3). The anodized film body 140 includes a barrier layer 143 and a porous layer 141. The anodized film body 140 may be formed with a structure in which the barrier layer 143 formed during anodization remains intact, sealing either the upper or lower ends of the pores P. The pores have a length of 1 μm to 200 μm and a diameter of 10 nm to 1 μm. The pitch between adjacent pores P is 20 nm to 200 nm.

[0092] Next, (ii) a step of filling the pores P of the anodic oxide film body 140 with the capacitor structure cs to form the capacitor wire 130 is performed.

[0093] Referring to FIG. 5b, the anodic oxide body 140 is attached to the substrate S using a bonding layer 160. Then, a patternable material (e.g., photoresist PR) 153 is formed on the upper surface of the anodic oxide body 140, and the patternable material 153 is patterned so that some pores P are not covered and other pores P are covered. A first wire metal layer 131 is formed in the areas not covered by the patternable material 153. The first wire metal layer 131 can be formed through a deposition process (CVD, PVD, ALD). Preferably, the first wire metal layer 131 is deposited using atomic layer deposition (ALD). The pores P are configured in the form of wells that are open at the top and closed at the bottom, and the first wire metal layer 131 is conformally coated along the inner walls of the pores P.

[0094] The first wire metal layer 131 may be a metal film made of a first metal, a metal oxide film containing the first metal, a metal nitride film containing the first metal, a metal oxynitride film containing the first metal, or a combination thereof, where the first metal may be Ti, Co, Nb, or Sn.

[0095] Next, referring to FIG. 12A, a dielectric layer 133 is formed on the first wire metal layer 131. The dielectric layer 133 can be formed through a deposition process (CVD, PVD, ALD). Preferably, the dielectric layer 133 is deposited using atomic layer deposition (ALD). The first wire metal layer 131 is configured in the form of a well that is open at the top and sealed at the bottom, and the dielectric layer 133 is conformally coated along the inner wall of the first wire metal layer 131.

[0096] The dielectric layer 133 may be made of a metal oxide film containing a second metal, which may be Hf, Zr, Nb, Ce, or Ti.

[0097] 12b, a second wire metal layer 135 is formed on the dielectric layer 133. The second wire metal layer 135 can be formed through a deposition process (CVD, PVD, ALD). Preferably, the second wire metal layer 135 is deposited using atomic layer deposition (ALD). The dielectric layer 133 is configured in the form of a well that is open at the top and sealed at the bottom, and the second wire metal layer 135 is conformally coated along the inner wall of the dielectric layer 133.

[0098] The second wire metal layer 135 may be formed by filling all of the remaining space of the pores P coated with the dielectric layer 133. Alternatively, unlike the illustration, the second wire metal layer 135 may be formed by coating in the form of a well that is open at the top and closed at the bottom, thereby incompletely filling the pores P.

[0099] The second wire metal layer 135 may be a metal film made of a first metal, a metal oxide film containing the first metal, a metal nitride film containing the first metal, a metal oxynitride film containing the first metal, or a combination thereof, where the first metal may be Ti, Co, Nb, or Sn.

[0100] As described above, the capacitor structures cs are filled into the pores P to form the capacitor wire 130. The capacitor wire 130 is formed at a high density with a narrow pitch, which can significantly improve the capacitance per unit volume.

[0101] Next, the step (iii) of forming the upper common electrode layer 110 is carried out.

[0102] 13a, an upper common electrode layer 110 is formed on the second wire metal layer 135. The upper common electrode layer 110 may be made of silver (Ag), nickel (Ni), copper (Cu), tin (Sn), indium tin oxide (ITO), palladium (Pd), or an alloy thereof, but the present invention is not limited thereto. Alternatively, the upper common electrode layer 110 may be formed of the same material as the first wire metal layer 131 and / or the second wire metal layer 135. Alternatively, the upper common electrode layer 110 may be made of a metal film made of a first metal, a metal oxide film containing the first metal, a metal nitride film containing the first metal, a metal oxynitride film containing the first metal, or a combination thereof. Here, the first metal may be Ti, Co, Nb, or Sn.

[0103] Next, (iv) the step of filling the pores P of the anodic oxide film body 140 with functional structures fs to form functional wires 150 is performed.

[0104] 13a, the patternable material 153 on the upper surface of the anodic oxide film body 140 can be removed by an appropriate method. The functional wires 150 are formed by filling the pores P where the patternable material 153 has been removed with functional structures fs. The functional structures fs can be formed by a deposition method, but are not limited to this. The functional structures fs can include metal or insulating materials.

[0105] Meanwhile, although it has been described that (iii) the step of forming the upper common electrode layer 110 is performed first, and then (iv) the step of filling the pores P of the anodic oxide film body 140 with the functional structure fs to form the functional wire 150 is performed, this is not limited thereto, and the order may be changed.

[0106] 13b, the top of the pores P where the functional wires 150 are formed is covered with a patternable material 153. In other words, the patternable material 153 covers the top of the functional wires 150 to protect the functional wires 150 from the outside.

[0107] 14a, the substrate fabricated in the previous step is inverted and attached to a new substrate S using a bonding layer 160. Next, the existing substrate S on top is removed, and a patternable material 153 is patterned and formed in its place.

[0108] 14b, a portion of the anodic oxide film body 140 is then removed. Only a portion of the anodic oxide film body 140 is wet-etched using a solution that reacts only with the anodic oxide film, so that the ends of the capacitor wires 130 protrude from the anodic oxide film body 140 and are exposed. More specifically, by removing a portion of the anodic oxide film body 140 using the wet solution, the bottom portions wc of the capacitor wires 130 protrude from the anodic oxide film body 140.

[0109] Next, step (iv) of forming the lower common electrode layer 120 is performed.

[0110] 15, the lower common electrode layer 120 is formed in the area where a portion of the anodic oxide film body 140 has been removed. As a result, the bottom portion wc of the capacitor wire 130 is embedded in the lower common electrode layer 120. The bottom portion wc of the capacitor wire 130 is embedded in the lower common electrode layer 120 and is not exposed to the outside by the lower common electrode layer 120. The lower common electrode layer 120 is formed to cover the end portion of the capacitor wire 130 protruding from the anodic oxide film body 140, which has the advantage of improving bonding strength.

[0111] The lower common electrode layer 120 may be made of silver (Ag), nickel (Ni), copper (Cu), tin (Sn), indium tin oxide (ITO), palladium (Pd), or an alloy thereof, but the present invention is not limited thereto. Alternatively, the lower common electrode layer 120 may be formed of the same material as the first wire metal layer 131 and / or the second wire metal layer 135. Alternatively, the lower common electrode layer 120 may be made of a metal film made of a first metal, a metal oxide film containing the first metal, a metal nitride film containing the first metal, a metal oxynitride film containing the first metal, or a combination thereof. Here, the first metal may be Ti, Co, Nb, or Sn.

[0112] Next, the substrate S and bonding layer 160 are removed to complete the capacitor component 100 shown in FIG.

[0113] Capacitor component 100 according to the third embodiment Next, a third embodiment of the present invention will be described. The following description will focus on distinctive components compared to the first embodiment, but will omit a description of components that are the same as or similar to those of the first embodiment.

[0114] FIG. 16 is a cross-sectional view of a capacitor component 100 according to a third preferred embodiment of the present invention, and FIGS. 17a to 21 are diagrams illustrating a method for manufacturing the capacitor component 100 according to the third preferred embodiment of the present invention.

[0115] The capacitor component 100 according to the third embodiment differs from the capacitor component 100 according to the first embodiment in that the first wire metal layer 131 is not formed on the surface of the anodized film body 140, and pores P are formed only inside, but the other configurations are the same.

[0116] In the third embodiment, the first wire metal layer 131 is not formed on the surface portion wa of the capacitor wire 130, but is formed only on the columnar surface portion wb and bottom portion wc of the capacitor wire 130, which differs from the configuration in the first embodiment in that it is formed on the surface portion wa, columnar surface portion wb and bottom portion wc of the capacitor wire 130.

[0117] 17a to 21, a method for manufacturing a capacitor component 100 according to a third preferred embodiment of the present invention will be described. In the following description of the manufacturing method, the configuration of the capacitor component 100 according to the third embodiment will become clearer.

[0118] The manufacturing method of the capacitor component 100 according to the third embodiment includes the steps of (i) providing an anodized film body 140, (ii) filling the pores P of the anodized film body 140 with a capacitor structure cs to form a capacitor wire 130, (iii) forming an upper common electrode layer 110, and (iv) forming a lower common electrode layer 120.

[0119] First, the step of (i) providing an anodized oxide film body 140 is performed.

[0120] Referring to FIG. 17a, an anodized film body 140 from which the base metal M has been removed is prepared.

[0121] After anodization, the base metal M is removed, leaving only the anodized film body 140 made of aluminum oxide (Al2O3). The anodized film body 140 includes a barrier layer 143 and a porous layer 141. The anodized film body 140 may be formed in a structure in which the barrier layer 143 formed during anodization remains intact to seal either the upper or lower ends of the pores P.

[0122] Crown protrusions CD are formed on the upper surface of the porous layer 141. Based on each pore P, the upper surface has a groove shape, and the grooves overlap with adjacent grooves to form crown protrusions CD.

[0123] Next, (ii) a step of filling the pores P of the anodic oxide film body 140 with the capacitor structure cs to form the capacitor wire 130 is performed.

[0124] Referring to FIG. 17b, the anodic oxide film body 140 is attached to the substrate S using a bonding layer 160. Then, a first wire metal layer 131 is formed on the upper surface of the anodic oxide film body 140. The first wire metal layer 131 can be formed through a deposition process (CVD, PVD, ALD). Preferably, the first wire metal layer 131 is deposited using atomic layer deposition (ALD). The pores P are configured in the form of wells that are open at the top and closed at the bottom, and the first wire metal layer 131 is conformally coated along the inner walls of the pores P. The first wire metal layer 131 is also uniformly coated on the entire surface of the crown protrusion CD.

[0125] 18a, the upper surface of the anodic oxide film body 140 is planarized by a chemical mechanical polishing (CMP) process, while removing the crown protrusions (CD). By removing the crown protrusions CD, the first wire metal layer 131 is not present on the surface of the anodic oxide film body 140, and the first wire metal layer 131 is only provided inside the pores P.

[0126] The first wire metal layer 131 may be a metal film made of a first metal, a metal oxide film containing the first metal, a metal nitride film containing the first metal, a metal oxynitride film containing the first metal, or a combination thereof, where the first metal may be Ti, Co, Nb, or Sn.

[0127] Next, referring to FIG. 18b, a dielectric layer 133 is formed on the first wire metal layer 131. The dielectric layer 133 can be formed through a deposition process (CVD, PVD, ALD). Preferably, the dielectric layer 133 is deposited using atomic layer deposition (ALD). The first wire metal layer 131 is configured in the form of a well that is open at the top and closed at the bottom, and the dielectric layer 133 is conformally coated along the inner wall of the first wire metal layer 131. The dielectric layer 133 is also formed on the surface of the anodized film body 140.

[0128] The dielectric layer 133 may be made of a metal oxide film containing a second metal, which may be Hf, Zr, Nb, Ce, or Ti.

[0129] 19A, a second wire metal layer 135 is formed on the dielectric layer 133. The second wire metal layer 135 can be formed through a deposition process (CVD, PVD, ALD). Preferably, the second wire metal layer 135 is deposited using atomic layer deposition (ALD). The dielectric layer 133 is configured in the form of a well that is open at the top and sealed at the bottom, and the second wire metal layer 135 is conformally coated along the inner wall of the dielectric layer 133.

[0130] The second wire metal layer 135 may be formed by filling all of the remaining space of the pores P coated with the dielectric layer 133. Alternatively, unlike the illustration, the second wire metal layer 135 may be formed by coating in the form of a well that is open at the top and closed at the bottom, thereby incompletely filling the pores P.

[0131] The second wire metal layer 135 may be a metal film made of a first metal, a metal oxide film containing the first metal, a metal nitride film containing the first metal, a metal oxynitride film containing the first metal, or a combination thereof, where the first metal may be Ti, Co, Nb, or Sn.

[0132] As described above, the capacitor structures cs are filled into the pores P to form the capacitor wire 130. The capacitor wire 130 is formed at a high density with a narrow pitch, which can significantly improve the capacitance per unit volume.

[0133] Next, the step (iii) of forming the upper common electrode layer 110 is carried out.

[0134] 19b, an upper common electrode layer 110 is formed on the second wire metal layer 135. The upper common electrode layer 110 may be made of silver (Ag), nickel (Ni), copper (Cu), tin (Sn), indium tin oxide (ITO), palladium (Pd), or an alloy thereof, but the present invention is not limited thereto. Alternatively, the upper common electrode layer 110 may be formed of the same material as the first wire metal layer 131 and / or the second wire metal layer 135. Alternatively, the upper common electrode layer 110 and the first wire metal layer 131 may be made of a metal film made of a first metal, a metal oxide film containing the first metal, a metal nitride film containing the first metal, a metal oxynitride film containing the first metal, or a combination thereof. Here, the first metal may be Ti, Co, Nb, or Sn.

[0135] 20a, the bonding layer 160 and the substrate S are then removed. After that, the previously fabricated structure is inverted and the substrate S is attached using the bonding layer 160.

[0136] 20b, a portion of the anodic oxide film body 140 is removed. By wet etching only a portion of the anodic oxide film body 140 using a solution that reacts only with the anodic oxide film, the ends of the capacitor wires 130 are exposed and protrude from the anodic oxide film body 140. More specifically, by removing a portion of the anodic oxide film body 140 using the wet solution, the bottom portions wc of the capacitor wires 130 protrude from the anodic oxide film body 140.

[0137] Next, step (iv) of forming the lower common electrode layer 120 is performed.

[0138] 21, the lower common electrode layer 120 is formed in the area where a portion of the anodic oxide film body 140 has been removed. As a result, the bottom portion wc of the capacitor wire 130 is embedded in the lower common electrode layer 120. The bottom portion wc of the capacitor wire 130 is embedded in the lower common electrode layer 120 and is not exposed to the outside by the lower common electrode layer 120. The lower common electrode layer 120 is formed to cover the end portion of the capacitor wire 130 protruding from the anodic oxide film body 140, which has the advantage of improving bonding strength.

[0139] The lower common electrode layer 120 may be made of silver (Ag), nickel (Ni), copper (Cu), tin (Sn), indium tin oxide (ITO), palladium (Pd), or an alloy thereof, but the present invention is not limited thereto. Alternatively, the lower common electrode layer 120 may be formed of the same material as the first wire metal layer 131 and / or the second wire metal layer 135. Alternatively, the lower common electrode layer 120 may be made of a metal film made of a first metal, a metal oxide film containing the first metal, a metal nitride film containing the first metal, a metal oxynitride film containing the first metal, or a combination thereof. Here, the first metal may be Ti, Co, Nb, or Sn.

[0140] Next, the substrate S and the bonding layer 160 are removed, completing the capacitor component 100 shown in FIG.

[0141] Integrated Circuit Chip Package 1000 FIG. 22 is a cross-sectional view of an integrated circuit chip package 1000 incorporating a capacitor component 100 according to a preferred embodiment of the present invention.

[0142] An integrated circuit chip package 1000 according to a preferred embodiment of the present invention includes a package substrate 1300, a semiconductor chip 1200 mounted on the package substrate 1300, a molding part 1100 for protecting the semiconductor chip 1200, and a capacitor component 100 provided in or on the package substrate 1300.

[0143] The semiconductor chip 1200 may be a logic chip including a logic circuit. The logic chip may be a controller that controls a memory chip. In another exemplary embodiment, the semiconductor chip 1200 may be a memory chip. The memory chip may include various forms of memory circuits. The memory circuit may be dynamic random access memory (DRAM), static RAM (SRAM), ferromagnetic RAM (FRAM), phase change RAM (PRAM), magnetic RAM (MRAM), resistive RAM (RRAM), read only memory (ROM), mask ROM (MROM), programmable ROM (PROM), erasable ROM (EPROM), electrically erasable ROM (EEPROM), or a combination thereof.

[0144] The package substrate 1300 may include a plurality of wiring layers 1310 configured to be electrically connected to a plurality of chip pads 1210 included in the semiconductor chip 1200, and an insulating film 1320 for selectively insulating adjacent wiring layers 1310 among the plurality of wiring layers 1310. The plurality of wiring layers 1310 included in the package substrate 1300 may include Al, Cu, Sn, Ni, Au, Pt, or an alloy thereof. A plurality of external connection members 1600 may be connected to the package substrate 1300.

[0145] The package substrate 1300 includes a capacitor component 100. The capacitor component 100 can be configured to be electrically connectable to some of the chip pads 1210 included in the semiconductor chip 1200, or some of the wiring layers 1310 selected from among the wiring layers 1310 included in the package substrate 1300. The capacitor component 100 can include any of the capacitor components 100 according to the first to third embodiments.

[0146] As the semiconductor chip 1200 becomes more highly integrated and faster, noise generated from the ground plane and power terminal due to high-speed switching in the internal and external wiring of the integrated circuit chip package 1000 can cause malfunction of the semiconductor chip 1200. However, the capacitor component 100 according to the present invention minimizes the effects of such noise. Based on the advantages of the capacitor component 100, the integrated circuit chip package 1000 including the capacitor component 100 according to the present invention exhibits superior performance in high-frequency environments compared to conventional MLCCs, and can be advantageously applied in the fields of small IT devices such as smart watches, HPC, and high-frequency band 5G.

[0147] Although the present invention has been described above with reference to preferred embodiments thereof, those skilled in the art may implement the present invention in various modified or altered forms without departing from the spirit and scope of the present invention as set forth in the following claims. [Explanation of symbols]

[0148] 100 Capacitor parts 110 Upper common electrode layer 120 Lower common electrode layer 130 Capacitor Wire 140 Anodized Body 150 Functional Wire

Claims

1. an anodized film body having a plurality of pores; a first wire metal layer provided on the inner wall of the pore; a dielectric layer disposed on the first wire metal layer; a second wire metal layer disposed on the dielectric layer; a lower common electrode layer connected to the first wire metal layer below the body.

2. 2. The capacitor component according to claim 1, wherein an end of the first wire metal layer protrudes from a lower portion of the anodized film body and is embedded in the lower common electrode layer.

3. a lower common electrode layer; an anodized oxide film body having a plurality of pores and disposed on the common electrode layer; a capacitor wire including a capacitor structure formed within the pore; The end of the capacitor wire is connected to the lower common electrode layer.

4. The capacitor wire is a first wire metal layer provided on the inner wall of the pore; a dielectric layer disposed on the first wire metal layer; a second wire metal layer disposed on said dielectric layer.

5. 4. The capacitor component according to claim 3, wherein an end of the capacitor wire protrudes from a lower portion of the anodized film body and is embedded in the lower common electrode layer.

6. The capacitor wire is a surface portion provided on a surface of the anodized oxide film body; a cylindrical surface portion provided on an inner wall of the pore; 4. The capacitor component according to claim 3, further comprising: a bottom portion formed continuously with the columnar surface portion, protruding below the body and embedded in the lower common electrode layer.

7. the lower common electrode layer is provided to extend in a horizontal direction, The capacitor component according to claim 3 , wherein the capacitor wires extend vertically and a plurality of the capacitor wires are provided spaced apart horizontally.

8. an anodized oxide film body having a plurality of pores and disposed on the lower common electrode layer; a capacitor wire including a capacitor structure formed within at least a portion of the pore; a functional wire including a functional structure formed within at least a portion of the pore; The end of the capacitor wire is connected to the lower common electrode layer.

9. The capacitor component according to claim 8 , wherein the functional structure is a metal material.

10. The capacitor component according to claim 8 , wherein the functional structure is an insulating material.

11. The capacitor component of claim 8 , wherein ends of the functional wires are closed with a patternable material.

12. an upper common electrode layer; a lower common electrode layer; an anodic oxide film body having a plurality of pores, the anodic oxide film body being disposed between the upper common electrode layer and the lower common electrode layer; a capacitor wire including a capacitor structure formed within the pore; The end of the capacitor wire is connected to the lower common electrode layer.

13. The capacitor wire is a first wire metal layer provided on the inner wall of the pore; a dielectric layer disposed on the first wire metal layer; a second wire metal layer disposed on the dielectric layer; The capacitor component according to claim 12 , wherein the upper common electrode layer is provided on top of the second wire metal layer.

14. A package substrate; a semiconductor chip mounted on the package substrate; a molding part for protecting the semiconductor chip; a capacitor component provided in or on the package substrate, The capacitor component is a lower common electrode layer; an anodized oxide film body having a plurality of pores and disposed on the common electrode layer; a capacitor wire including a capacitor structure formed within the pore; an end of the capacitor wire is connected to the lower common electrode layer.

15. providing an anodized body; filling the pores of the anodized oxide film body with a capacitor structure to form a capacitor wire; forming an upper common electrode layer on top of the capacitor wires; removing a portion of the anodized film body and forming a lower common electrode layer so that a portion of the end of the capacitor wire is embedded.

Images