Superconducting device and method for manufacturing superconducting device

Abstract

To improve the productivity of a superconducting device.SOLUTION: The superconducting device 10 includes a substrate 11 and a superconductor layer 12 formed on the substrate 11 and containing a perovskite-type copper oxide containing RE, Ba, Cu, and O (RE is a rare earth element). The superconductor layer 12 has a structure in which first layers 13 containing a perovskite-type copper oxide and nanorods or nanoparticles and second layers 14 containing a perovskite-type copper oxide and not containing nanorods or nanoparticles are alternately stacked. The amount of the nanorods or nanoparticles in the first layer 13 may be about 1.5 wt% or less based on the total weight of the first layer 13. The diameters of the nanorods or nanoparticles are 5nm or less. The critical current densities at the 20K and 9T of the superconducting devices 10 are greater than or equal to 8 * 106 (A / cm2).SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] SUPERCONDUCTING DEVICES AND METHODS FOR MANUFACTURING THEM FIELD OF THE DISCLOSURE The present disclosure relates to superconducting devices and methods for manufacturing superconducting devices. [Background technology]

[0002] Superconducting wires are being developed for application in a wide range of fields, such as coils for superconducting electromagnets. The critical current density (Jc), which is the maximum value of superconducting current that can flow in the superconductor without generating voltage, is extremely important for the performance of superconducting wires, and improvements in Jc characteristics are being sought.

[0003] Among superconductors, YBa2Cu3O 7ーy (YBCO) has a high Tc of 92K and excellent Jc characteristics, making it a promising material for superconducting wires. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] U.S. Patent Publication No. 2023-301202 Summary of the Invention [Problem to be solved by the invention]

[0005] It is known that the introduction of nanorods into YBCO improves its Jc characteristics in a magnetic field. The inventors of the present invention have conducted further intensive research into superconductors incorporating nanorods and have succeeded in developing a superconducting device with even better characteristics.

[0006] The present disclosure has been made in view of these problems, and its purpose is to provide a superconducting device with excellent characteristics. [Means for solving the problem]

[0007] In order to solve the above problems, a superconducting device according to an embodiment of the present disclosure comprises a substrate and a superconductor layer formed on the substrate and containing perovskite copper oxide (RE is a rare earth element) containing RE, Ba, Cu, and O. The superconductor layer has a structure in which a first layer containing perovskite copper oxide and nanorods or nanoparticles and a second layer containing perovskite copper oxide but not containing nanorods or nanoparticles are alternately stacked. The content of nanorods or nanoparticles in the first layer is 1.5 wt % or less based on the total weight of the first layer. The diameter of the nanorods or nanoparticles is 5 nm or less. The critical current density at 20 K and 9 T is 8×10 6 (A / cm 2 )That's all.

[0008] Another embodiment of the present disclosure is also a superconducting device. This superconducting device includes a substrate and a superconductor layer formed on the substrate and including a perovskite copper oxide (RE, Ba, Cu, and O) (RE is a rare earth element). The superconductor layer has a structure in which a first layer including a perovskite copper oxide and nanorods or nanoparticles and a second layer including a perovskite copper oxide but not including nanorods or nanoparticles are alternately stacked.

[0009] Yet another embodiment of the present disclosure is also a superconducting device. The superconducting device includes a substrate and a superconductor layer formed on the substrate and including a perovskite-type copper oxide containing RE, Ba, Cu, and O (RE is a rare earth element). The superconductor layer includes nanorods or nanoparticles. The content of the nanorods or nanoparticles is 1.5 wt % or less based on the total weight of the superconductor layer.

[0010] Yet another embodiment of the present disclosure is also a superconducting device. The superconducting device includes a substrate and a superconductor layer formed on the substrate and including a perovskite-type copper oxide containing RE, Ba, Cu, and O (RE is a rare earth element). The superconductor layer includes nanorods or nanoparticles. The nanorods or nanoparticles have a diameter of 5 nm or less.

[0011] Yet another embodiment of the present disclosure is also a superconducting device. The superconducting device includes a substrate and a superconductor layer formed on the substrate and including a perovskite-type copper oxide (RE: rare earth elements) containing RE, Ba, Cu, and O. The critical current density at 20 K and 9 T is 8×10 6 (A / cm 2 )That's all.

[0012] Yet another aspect of the present disclosure is a method for fabricating a superconducting device, comprising forming a superconductor layer on a substrate, the superconductor layer including a perovskite copper oxide containing RE, Ba, Cu, and O, where RE is a rare earth element. Forming the superconductor layer includes forming a first layer including perovskite copper oxide and nanorods or nanoparticles, and forming a second layer including perovskite copper oxide but not including nanorods or nanoparticles. [Effects of the Invention]

[0013] According to the present disclosure, a superconducting device having excellent characteristics can be provided. [Brief explanation of the drawings]

[0014] [Figure 1] 1 is a diagram schematically illustrating a structure of a superconducting device according to an embodiment of the present disclosure. [Figure 2] 1 is a flowchart illustrating a procedure for a method for manufacturing a superconducting device according to an embodiment of the present disclosure. [Figure 3] 10 is a flowchart illustrating the steps of another example of a method for manufacturing a superconducting device according to an embodiment of the present disclosure. [Figure 4] FIG. 2 is a diagram showing a TEM image of a cross section of a superconducting device of an example. [Figure 5] FIG. 2 is a diagram showing a TEM image of a cross section of a superconducting device of an example. [Figure 6] FIG. 10 is a graph showing the magnetic field dependence of Jc at 20 K for samples of an example and a comparative example. DETAILED DESCRIPTION OF THE INVENTION

[0015] YBa2Cu3O 7ーy REBa2Cu3O, represented by (YBCO) 7ーy In (REBCO)-based superconductors (RE is a rare earth element), when nanorods such as BaMO3 (M is Hf, Zr, or Sn) are introduced into the REBCO layer, the nanorods function as artificial pinning centers (APCs), improving the Jc characteristics in a magnetic field.

[0016] However, the inventors considered that if long, continuous nanorods penetrating the REBCO layer are introduced into the REBCO layer, the REBCO crystal structure may be stretched and distorted in the c-axis direction, which may limit the improvement of the Jc characteristics in a magnetic field.

[0017] To solve such problems, the superconducting device of the present disclosure has at least one of the following characteristics. (1) The length of the nanorods or nanoparticles in the c-axis direction is reduced by alternately stacking REBCO layers containing nanorods or nanoparticles and REBCO layers not containing nanorods or nanoparticles. (2) The content of nanorods or nanoparticles is reduced, for example, the content of nanorods or nanoparticles is set to 1.5 wt % or less based on the total weight of the REBCO layer. (3) The diameter of the nanorods or nanoparticles is reduced, for example, to 5 nm or less.

[0018] The above features can suppress the distortion of the REBCO crystal structure caused by the introduction of nanorods or nanoparticles, thereby further improving the Jc characteristics of superconducting devices in magnetic fields. In particular, the Jc characteristics of superconducting devices in magnetic fields can be further improved even when using superconducting devices in a temperature range near the liquid hydrogen temperature (20 K), rather than near the liquid nitrogen temperature (77 K), where the introduction of APCs has been widely studied. Considering the effect of resistance caused by the movement of quantized magnetic flux, a thinner APC is more advantageous at lower temperatures. Therefore, the feature (3) above is more effective for improving the Jc characteristics of superconducting devices in magnetic fields in low-temperature regions near the liquid hydrogen temperature.

[0019] The superconducting device of the present disclosure further improves the Jc characteristics of a superconducting device in a magnetic field using an approach different from conventional techniques that improve the Jc characteristics by improving the orientation of the substrate or superconductor layer, thereby relaxing the conditions regarding the orientation of the substrate or superconductor layer when manufacturing a superconducting device. This improves yield and reduces manufacturing costs, thereby improving the productivity of superconducting devices. Ultimately, it enables mass production of superconducting devices for applications such as wire for superconducting electromagnets.

[0020] The superconducting device of the present disclosure may have only one of the above characteristics, or any combination of two or more of them. That is, the superconducting device of the present disclosure may have only (1), only (2), only (3), (1) and (2), (1) and (3), (2) and (3), or all of (1) to (3).

[0021] FIG. 1 schematically illustrates the structure of a superconducting device 10 according to an embodiment of the present disclosure. The superconducting device 10 includes a substrate 11 and a superconductor layer 12 formed on the substrate 11. The superconductor layer 12 includes a perovskite copper oxide containing a rare earth element, Ba, Cu, and O. The superconductor layer 12 has a multilayer structure in which a first layer 13 including a perovskite copper oxide and nanorods or nanoparticles and a second layer 14 consisting of a perovskite copper oxide but substantially free of nanorods or nanoparticles are alternately stacked. In the example illustrated in the figure, the first layer 13 and the second layer 14 are stacked in this order on the substrate 11, but the second layer 14 and the first layer 13 may also be stacked in this order.

[0022] The substrate 11 may be any known substrate usable as a substrate for a superconducting device. The substrate 11 may be any substrate practically used as a superconducting wire. The substrate 11 may be an oriented oxide thin film laminated on a metal tape. The substrate 11 may be manufactured by an ion-beam-assisted deposition (IBAD) method, a rolling-assisted biaxially textured substrate (RABiTS) method, or the like. In the superconducting device 10 of this embodiment, the conditions regarding the orientation of the substrate can be relaxed, so the grain boundary tilt angle of the substrate 11 may be, for example, 5.6° or less. The grain boundary tilt angle of the substrate 11 may be 10° or less, 9° or less, 8° or less, 7° or less, 6° or less, 5° or less, 4° or less, or 3° or less. This can improve the yield of the substrate. It can also reduce the manufacturing cost of the superconducting device.

[0023] The superconductor constituting the superconductor layer 12 is REBa2Cu3O 7ーy RE may be a rare earth element, particularly Y, La, Nd, Eu, Sm, Gd, Dy, Er, or Yb. By using such a high-temperature superconductor, it is possible to provide a superconducting device that can operate at liquid nitrogen temperature and has excellent Jc characteristics.

[0024] A portion of the RE of the superconductor constituting the superconductor layer 12 may be substituted with Ca. This allows the superconductor layer 12 to be doped with holes, thereby improving the Jc characteristics of the superconducting device 10. The Ca doping amount is preferably about 5%. The Ca doping amount in the superconductor layer 12 may be 1% or more, 2% or more, 3% or more, 4% or more, 5% or more, 6% or more, 7% or more, 8% or more, 9% or more, or 10% or more. The Ca doping amount in the superconductor layer 12 may be 10% or less, 9% or less, 8% or less, 7% or less, 6% or less, 5% or less, 4% or less, 3% or less, 2% or less, or 1% or less.

[0025] The nanorods or nanoparticles contained in the first layer 13 may include at least one of BaMO3 (where M is Hf, Zr, Sn) and Ba2RENbO6 (where RE is Nd, Sm, Gd, Yb, Lu, Y).

[0026] The content of nanorods or nanoparticles in first layer 13 is preferably 1.5 wt % or less, based on the total weight of the superconductor in first layer 13. The content of nanorods or nanoparticles in first layer 13 may be 7 wt % or less, 6 wt % or less, 5 wt % or less, 4 wt % or less, 3 wt % or less, 2 wt % or less, 1.5 wt % or less, 1 wt % or less, or 0.5 wt % or less, based on the total weight of the superconductor in first layer 13. The content of nanorods or nanoparticles in first layer 13 may be 0.5 wt % or more, 1 wt % or more, 1.5 wt % or more, 2 wt % or more, 2.5 wt % or more, 3 wt % or more, 3.5 wt % or more, 4 wt % or more, 4.5 wt % or more, or 5 wt % or more, based on the total weight of the superconductor in first layer 13.

[0027] The diameter of the nanorods or nanoparticles contained in first layer 13 is preferably 5 nm or less. The diameter of the nanorods or nanoparticles contained in first layer 13 may be 7 nm or less, 6 nm or less, 5 nm or less, 4.5 nm or less, 4 nm or less, 3.5 nm or less, 3 nm or less, 2.5 nm or less, or 2 nm or less.

[0028] Two or more alternating first layers 13 and second layers 14 may be laminated. The total number of first layers 13 and second layers 14 may be 3 or more, 4 or more, 5 or more, 6 or more, 7 or more, 8 or more, 9 or more, 10 or more, 15 or more, 20 or more, 25 or more, 30 or more, 35 or more, 40 or more, 45 or more, 50 or more, 55 or more, 60 or more, or 65 or more. The total number of first layers 13 and second layers 14 may be 60 or less, 55 or less, 50 or less, 45 or less, 40 or less, 35 or less, 30 or less, 25 or less, 20 or less, 15 or less, 10 or less, 9 or less, 8 or less, 7 or less, 6 or less, 5 or less, 4 or less, 3 or less, or 2 or less.

[0029] The thickness of first layer 13 is preferably about 30 to 40 nm. The thickness of first layer 13 may be 10 nm or more, 15 nm or more, 20 nm or more, 25 nm or more, 30 nm or more, 35 nm or more, or 40 nm or more. The thickness of first layer 13 may be 60 nm or less, 55 nm or less, 50 nm or less, 45 nm or less, 40 nm or less, 35 nm or less, or 30 nm or less.

[0030] When the superconductor layer 12 includes a plurality of first layers 13, the first layers 13 may all have the same thickness or may be different from each other. The content of nanorods or nanoparticles contained in the first layers 13 may all be the same or may be different from each other.

[0031] The thickness of second layer 14 is preferably about 30 to 40 nm. The thickness of second layer 14 may be 10 nm or more, 15 nm or more, 20 nm or more, 25 nm or more, 30 nm or more, 35 nm or more, or 40 nm or more. The thickness of second layer 14 may be 60 nm or less, 55 nm or less, 50 nm or less, 45 nm or less, 40 nm or less, 35 nm or less, or 30 nm or less.

[0032] When the superconductor layer 12 includes a plurality of second layers 14, the film thicknesses of the second layers 14 may all be the same or may be different.

[0033] The thickness ratio of the first layer 13 to the second layer 14 is preferably 1 / 9 or more and 9 / 1 or less. The thickness ratio of the first layer 13 to the second layer 14 may be 1 / 10 or more, 1 / 9 or more, 1 / 8 or more, 1 / 7 or more, 1 / 6 or more, 1 / 5 or more, 1 / 4 or more, 1 / 3 or more, 1 / 2 or more, 1 or more, 2 / 1 or more, 3 / 1 or more, 4 / 1 or more, 5 / 1 or more, 6 / 1 or more, 7 / 1 or more, or 8 / 1 or more. The thickness ratio of the first layer 13 to the second layer 14 may be 10 / 1 or less, 9 / 1 or less, 8 / 1 or less, 7 / 1 or less, 6 / 1 or less, 5 / 1 or less, 4 / 1 or less, 3 / 1 or less, 2 / 1 or less, 1 or less, 1 / 2 or less, 1 / 3 or less, 1 / 4 or less, 1 / 5 or less, 1 / 6 or less, 1 / 7 or less, or 1 / 8 or less.

[0034] The Jc of the superconducting device 10 of the present disclosure at 20 K and 9 T is 8×10 6 (A / cm 2 ) or more. The Jc of the superconducting device 10 of the present disclosure at 20 K and 9 T is 8×10 6 (A / cm 2 ) or more, 9 x 10 6 (A / cm 2 ) or more, 10 x 10 6 (A / cm 2 ) or more, 11 x 10 6 (A / cm 2 ) or more, 12 x 10 6 (A / cm 2 ) or more, 13 x 10 6 (A / cm 2 ) or more, 14 x 10 6 (A / cm 2 ) or more, 15 x 10 6 (A / cm 2 ) or more, 16 x 10 6 (A / cm 2 ) or more, 17 x 10 6 (A / cm 2 ) or more.

[0035] The superconducting device 10 may include a first region having a multilayer structure and a second region not having a multilayer structure. In the first region, where the grain boundary tilt angle of the substrate 11 or the superconductor layer 12 is large, the Jc characteristics are poor as they are. Therefore, the superconductor layer 12 may be formed with a multilayer structure including the first layer 13 and the second layer 14. In the second region, where the grain boundary tilt angle is small, the Jc characteristics are good even without the introduction of nanorods or nanoparticles. Therefore, the superconductor layer 12 may be formed of REBCO alone. This improves the Jc characteristics of the entire superconducting device. In particular, for superconducting wires on the order of kilometers, it is difficult to keep the grain boundary tilt angle small throughout the substrate. If a region with a large grain boundary tilt angle exists, that region may become a bottleneck. The superconducting device of this embodiment can realize a superconducting wire on the order of kilometers with excellent Jc characteristics throughout.

[0036] FIG. 2 is a flowchart showing the steps of a method for manufacturing a superconducting device according to an embodiment of the present disclosure. First, a substrate 11 is prepared (S10). Next, a first layer 13 of perovskite copper oxide containing nanorods or nanoparticles is formed (S12), and a second layer 14 of perovskite copper oxide not containing nanorods or nanoparticles is formed (S14). Steps S12 and S14 are repeated until a predetermined number of first layers 13 and second layers 14 are stacked (N in S16). When a predetermined number of first layers 13 and second layers 14 are stacked (Y in S16), the manufacturing of the superconducting device 10 is completed. Additional processes, such as bridge processing and metal coating, may be performed on the superconducting device 10. Note that in the example shown in this figure, the first layer 13 is formed on the substrate 11 before the second layer 14 is stacked. However, the second layer 14 may be formed on the substrate 11 before the first layer 13 is stacked.

[0037] The first layer 13 and the second layer 14 may be formed by pulsed laser deposition (PLD), metal organic chemical vapor deposition (MOCVD), or the like.

[0038] 3 is a flowchart showing the steps of another example of a method for manufacturing a superconducting device according to an embodiment of the present disclosure. First, a substrate 11 is fabricated (S20). Next, the surface state of the fabricated substrate 11 is acquired for each predetermined area (S22). The surface state of the substrate 11 may be observed by reflection high energy electron diffraction (RHEED) or the like.

[0039] If the surface condition of the substrate 11 in the target area does not satisfy the conditions necessary to obtain the Jc characteristics required for the superconducting device 10 (N in S24), a first layer 13 and a second layer 14 are stacked to form a superconductor layer 12 in order to improve the Jc characteristics of the superconducting device 10 in the target area (S26). If the surface condition of the substrate 11 in the target area satisfies the conditions (Y in S24), a superconductor layer 12 consisting only of REBCO is formed without introducing nanorods or nanoparticles (S28). Until the formation of the superconductor layer 12 on the entire area of ​​the substrate 11 is completed (N in S30), the process returns to S22, and the acquisition of the surface condition of the substrate 11 and the formation of the superconductor layer 12 are repeated. When the formation of the superconductor layer 12 on the entire area of ​​the substrate 11 is completed (Y in S30), the production of the superconducting device 10 is terminated.

[0040] The condition in S24 may be a condition related to the grain boundary tilt angle of the substrate 11. The condition may be that the grain boundary tilt angle of the substrate 11 is equal to or less than a predetermined value. The predetermined value may be 10°, 9°, 8°, 7°, 6°, 5°, 4°, 3°, 2°, or 1°.

[0041] The superconducting device of the present disclosure can be manufactured by pulsed laser deposition (PLD) using perovskite copper oxide as a target, including nanorod or nanoparticle raw materials, or metal organic chemical vapor deposition (MOCVD) using organometallic complexes of each element as raw materials.

[0042] The superconducting electromagnet of the present disclosure includes the superconducting device 10 of the present embodiment wound in a coil shape. The superconducting device 10 may be a wire rod. In this case, the substrate 11 may be formed on a flexible metal tape. The substrate 11 may include a biaxially oriented buffer layer.

[0043] [Example] A sample of a superconducting device was fabricated by the manufacturing method according to the embodiment, and the Jc characteristics were measured.

[0044] [Sample preparation] Superconducting device samples were deposited by pulsed laser deposition (PLD). Substrates manufactured by ion-beam-assisted deposition (IBAD) were used. The substrates were placed inside a chamber, and the oxygen partial pressure was set to 53 Pa and the temperature to 850°C. A KrF excimer laser was used to deposit 2.7 J / cm of YBCO targets doped with 1.5, 3, 5, or 7 wt% BHO (BaHfO3). 2 The first layer 13 was deposited under the same conditions. The target was then rotated, and the second layer 14 was deposited under the same conditions using YBCO as the target. The targets were prepared using a known, general method. This process was repeated to deposit a total of 4, 8, 32, or 64 layers. The film was then bridge-processed (width 100 μm, length 1 mm) and silver-coated, after which it was oxygen-annealed at 400°C for 2 hours (a total of 3 hours, including 1 hour for heating). Terminals were attached, and the magnetic field dependence of Jc was measured using a Physical Properties Measurement System (PPMS (registered trademark)).

[0045] [structure] Figure 4 shows a TEM image of the cross section of a superconducting device 10 of the example. This sample has a thickness ratio of the first layer 13 to the second layer 14 of 0.6, a BHO nanorod content of 1.5 wt %, and a stacking number of 4. As shown in Figure 4(a), BHO nanorods are introduced into the first layer 13 along the c-axis direction. The nanorods in each first layer 13 are interrupted by the second layer 14 and are not continuous. As shown in Figure 4(b) at a higher magnification, the diameter of the BHO nanorods is 4 to 5 nm.

[0046] Figure 5 shows a TEM image of a cross section of a superconducting device 10 of the example. The sample shown in Figure 5(a) has eight layers of first layers 13 and second layers 14. The sample shown in Figure 5(b) has 32 layers of first layers 13 and second layers 14. In both samples, the length of the nanorods is suppressed.

[0047] [Jc characteristics] Figure 6 shows the magnetic field dependence of Jc at 20 K for the samples of the example and comparative example. Among the examples, sample A had a thickness ratio of the first layer 13 to the second layer 14 of 0.6, four layers of the first layer 13 and the second layer 14, and a BHO nanorod content of 1.5 wt%. Sample B had a thickness ratio of the first layer 13 to the second layer 14 of 0.6, four layers of the first layer 13 and the second layer 14, and a BHO nanorod content of 3 wt%. The comparative examples are reported in references [1] (A. Goyal et al., IOP Conf. Series: Journal of Physics: Conf. Series, 871, 012039 (2017)) and [2] (A. Molodyk et al., Scientific Reports, 11, 2984 (2021)).

[0048] Sample A exhibited a particularly high Jc characteristic compared to previous reports. The Jc of sample A at 20 K and 9 T was 17.05 (MA / cm 2 ) was.

[0049] The present disclosure has been described above based on examples. These examples are merely illustrative, and it will be understood by those skilled in the art that various modifications are possible in the combination of the components and processing steps, and that such modifications are also within the scope of the present disclosure. [Industrial Applicability]

[0050] The present invention can be used in superconducting devices and methods for manufacturing superconducting devices. [Explanation of symbols]

[0051] 10 superconducting device, 11 substrate, 12 superconductor layer, 13 first layer, 14 second layer.

Claims

1. A substrate; a superconductor layer formed on the substrate and including a perovskite-type copper oxide containing RE, Ba, Cu, and O (RE is a rare earth element); Equipped with the superconductor layer has a structure in which a first layer containing the perovskite copper oxide and nanorods or nanoparticles and a second layer containing the perovskite copper oxide but not containing the nanorods or nanoparticles are alternately stacked; the content of the nanorods or nanoparticles in the first layer is 1.5 wt % or less based on the total weight of the first layer; the nanorods or nanoparticles have a diameter of 5 nm or less; The critical current density at 20 K and 9 T is 8 × 10 ６ (A / cm ２ ) or more Superconducting devices.

2. The nanorods or nanoparticles are BaMO ３ (M is Hf, Zr, Sn) or Ba ２ RENbO ６ (RE includes Nd, Sm, Gd, Yb, Lu, Y) 10. The superconducting device of claim 1.

3. The total number of the first layers and the second layers is 2 to 64.

3. The superconducting device according to claim 1 or 2.

4. The ratio of the thickness of the first layer to the thickness of the second layer is 1 / 9 or more and 9 / 1 or less.

3. The superconducting device according to claim 1 or 2.

5. The superconductor layer contains the perovskite copper oxide in which part of RE is substituted with Ca.

3. The superconducting device according to claim 1 or 2.

6. The superconducting device is a wire.

3. The superconducting device according to claim 1 or 2.

7. A substrate; a superconductor layer formed on the substrate and including a perovskite-type copper oxide containing RE, Ba, Cu, and O (RE is a rare earth element); Equipped with The superconductor layer has a structure in which a first layer containing the perovskite copper oxide and nanorods or nanoparticles and a second layer containing the perovskite copper oxide but not containing the nanorods or nanoparticles are alternately laminated. Superconducting devices.

8. A substrate; a superconductor layer formed on the substrate and including a perovskite-type copper oxide containing RE, Ba, Cu, and O (RE is a rare earth element); Equipped with the superconductor layer comprises nanorods or nanoparticles; The content of the nanorods or nanoparticles is 1.5 wt % or less based on the total weight of the superconductor layer. Superconducting devices.

9. A substrate; a superconductor layer formed on the substrate and including a perovskite-type copper oxide containing RE, Ba, Cu, and O (RE is a rare earth element); Equipped with the superconductor layer comprises nanorods or nanoparticles; The diameter of the nanorods or nanoparticles is 5 nm or less. Superconducting devices.

10. A substrate; a superconductor layer formed on the substrate and including a perovskite-type copper oxide containing RE, Ba, Cu, and O (RE is a rare earth element); Equipped with The critical current density at 20 K and 9 T is 8 × 10 ６ (A / cm ２ ) or more Superconducting devices.

11. forming a superconductor layer containing perovskite-type copper oxide containing RE, Ba, Cu, and O (RE is a rare earth element) on a substrate; The step of forming the superconductor layer comprises: forming a first layer comprising the perovskite copper oxide and nanorods or nanoparticles; forming a second layer comprising the perovskite copper oxide but not the nanorods or nanoparticles; Contains Methods for manufacturing superconducting devices.

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