Lighting module and lighting device having the same

The lighting module and device utilize a recessed substrate design with a resin and wavelength conversion layer to achieve uniform, efficient, and flexible area lighting, addressing issues of hot spots and design constraints in existing technologies.

JP2026001169APending Publication Date: 2026-01-06LG INNOTEK CO LTD
View PDF 8 Cites 0 Cited by

Patent Information

Application Number
JP2025166432
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2020-03-17
Filing Date
2025-10-02
Publication Date
2026-01-06

AI Technical Summary

Technical Problem

Existing lighting technologies struggle to provide uniform, efficient, and flexible area lighting with colored surfaces, often leading to hot spots and reduced design freedom due to thickness constraints.

Method used

A lighting module and device design featuring a substrate with a recess, a resin layer, and a wavelength conversion layer, where the resin layer and wavelength conversion layer are partially disposed in the recess, allowing for a thin, flexible structure that diffuses and converts light uniformly, reducing hot spots and enhancing design flexibility.

Benefits of technology

The design improves light uniformity, reduces hot spots, and enhances light efficiency and color quality, providing a flexible and slim lighting solution suitable for various applications.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 2026001169000001_ABST
    Figure 2026001169000001_ABST
Patent Text Reader

Abstract

To provide a lighting module and a lighting device which provide surface light through a colored surface.SOLUTION: The lighting device 100 may include a substrate 11 including a recess 13, a light source 21 on the substrate 11, a resin layer 31 on the substrate, and a wavelength conversion layer 60 on the resin layer. A portion 35 of the resin layer 31 may be disposed in the recess 13 of the substrate 11. A portion of the wavelength conversion layer 60 may be disposed on the recess 13 of the substrate 11. The outermost surface 35A of the portion 35 disposed in the recess 13 of the substrate 11 may be positioned more outward than the inner surface of the conversion layer 60.SELECTED DRAWING: Figure 2
Need to check novelty before this filing date? Find Prior Art

Description

[Technical Field]

[0001] Embodiments of the invention relate to lighting modules and lighting devices having a light source and a resin layer. The embodiment of the invention is a lighting module and a light source that provide surface light through a resin with a colored surface. An embodiment of the invention relates to a lighting module or a lighting device. This relates to a vehicle lamp. [Background technology]

[0002] The application of lighting is not only for mobile lighting, but also for indoor lighting, outdoor lighting, and display lighting. Light sources, such as light-emitting diodes (LEDs), include: Compared to light sources such as fluorescent lamps and incandescent lamps, LEDs consume less power, have a semi-permanent lifespan, have a fast response time, and are inexpensive. These LEDs have the advantages of being safe and environmentally friendly. It is used in various lighting devices such as interior and exterior lights. Recently, it has been used as a light source for vehicles. In recent years, lamps using light-emitting diodes have been proposed. LEDs have the advantage of being small in size. This allows for greater freedom in lamp design, and its semi-permanent lifespan makes it economical. do. Summary of the Invention [Problem to be solved by the invention]

[0003] Embodiments of the invention provide lighting modules and lighting devices that provide area light through colored surfaces. An embodiment of the invention includes a resin layer covering a light source and a wavelength conversion layer covering the resin layer. It is possible to provide a lighting module and a lighting device having a transforming layer. A recess is provided in the substrate on which the light source is provided, and a part of the resin layer and the wavelength conversion layer are provided in the recess. and a lighting module and a lighting device in which at least one or all of the above-mentioned components are arranged. An embodiment of the invention may comprise a recess in the substrate in which the light source is located, said recess being At least one of a part of the resin layer, a part of the phosphor layer and a part of the ink layer is disposed in the recess. The present invention can provide a lighting module and a lighting device in which two or more of the above are arranged. In one embodiment, a recess is disposed in the substrate on which the light source is disposed, and the recess is provided with a phosphor layer and an insulating layer. and a wavelength conversion layer having at least one of the wavelength conversion layers vertically overlapping the illumination module. An embodiment of the invention provides a substrate on which a light source is disposed. a recess is disposed in the resin layer, and the outermost surface of the resin layer disposed in the recess is a wavelength conversion layer The present invention provides a lighting module and a lighting device that are arranged outside the innermost or outermost surface of the In an embodiment of the invention, the recess in the substrate extends from the top surface to the bottom surface of the substrate. A hole or groove, the recess being filled with a material of a different resin layer to be laminated on the substrate. The present invention provides a lighting module and a lighting device that can achieve the above-described effects. It is possible to provide a lighting module that irradiates light and a lighting device having the same. The present invention can be applied to knitwear, liquid crystal display devices, and vehicle lamps. [Means for solving the problem]

[0004] An illumination device according to an embodiment of the invention comprises a substrate including a recess and a light source disposed on the substrate. a resin layer disposed on the substrate; and a wavelength conversion layer disposed on the resin layer. a portion of the resin layer disposed in a recess of the substrate and a portion of the wavelength conversion layer is disposed on the recess of the substrate, and a part of the resin layer disposed in the recess of the substrate The outermost surface of the portion may be located outside the inner surface of the wavelength converting layer.

[0005] According to an embodiment of the invention, the recess in the substrate is configured to vertically separate the wavelength conversion layer and the resin. The lighting device according to the embodiment of the invention has a recess. a substrate including the above, a light source disposed on the substrate, and a resin layer disposed on the substrate; a wavelength conversion layer disposed on the resin layer, wherein the light sources are arranged in N rows and M columns. the wavelength conversion layer includes an upper portion disposed on the upper surface of the resin layer; , a side portion connected to the upper portion and disposed on a side of the resin layer, and the recess of the substrate The wavelength-converting layer may be formed on the surface of the substrate, and may vertically overlap a portion of the side of the wavelength-converting layer. According to an embodiment, a part of the recess of the substrate is located outside the outer surface of the resin layer. Another part of the recess of the substrate may be located inside the outer surface of the resin layer. can be done.

[0006] According to an embodiment of the invention, the width of the recess in the substrate is greater than the thickness of the wavelength conversion layer. The depth of the recess in the substrate may be less than or equal to the thickness of the substrate. The lower end of the wavelength conversion layer overlapping the recess of the substrate is positioned within the recess of the substrate. The substrate may be disposed on the upper surface of the substrate or may be flush with the upper surface of the substrate. In this case, the maximum height of a region of the wavelength conversion layer that overlaps the recess of the substrate is The height of the wavelength conversion layer disposed on the substrate may be greater than or equal to the height of the wavelength conversion layer disposed on the substrate. According to an embodiment, the recess may be a groove or a hole. The LED chip may include a D chip and a resin member disposed on the LED chip. According to an embodiment of the invention, the wavelength conversion layer is a phosphor layer and is disposed on top of the phosphor layer. The wavelength conversion layer may include an ink layer, which is a mixture of a colored phosphor and a colored ink. According to an embodiment of the invention, two adjacent light emitting elements among the plurality of light emitting elements may be formed. The pitch between the light elements may be 5 mm or more.

[0007] An illumination device according to an embodiment of the invention includes a substrate, a light source disposed on the substrate, and a light source disposed on the substrate. a resin layer disposed on the resin layer; and a wavelength conversion layer disposed on the resin layer, The wavelength conversion layer includes a first side surface corresponding to the first side surface of the resin layer, and the first side surface of the wavelength conversion layer The surface includes a first region that overlaps a portion of the resin layer in a direction perpendicular to the substrate. According to an embodiment of the invention, the first region of the wavelength conversion layer is can be separated from

[0008] A portion of the resin layer is disposed between the first region and the substrate. , a hole, and the first region may be a region above the hole. [Effects of the Invention]

[0009] According to an embodiment of the invention, the lighting module or device can improve the uniformity of the surface light. According to an embodiment of the invention, the light of the light source can be diffused in the lighting module or device. The diffused light can then be wavelength converted and emitted through a colored surface. According to the embodiment of the present invention, it is possible to provide a colored wavelength-converting layer in a lighting module or device. This prevents hot spots and prevents the surface from becoming hot when the light is off. According to an embodiment of the invention, a plurality of By laminating thin layers of resin material, a flexible lighting module can be provided. According to an embodiment of the present invention, the side of the layer laminated with a resin material on the top of the substrate can be This allows blocking of light leakage through the optical fiber of the lighting module or device. Embodiments of the invention improve the light efficiency and light distribution characteristics of area lighting. This can improve the color quality and reduce the color difference between the appearance image and the luminous image. Vehicle lamps, backlight units, various display devices, and screens having the lighting devices according to the embodiments The present invention can be applied to a light source lighting device or a vehicle lamp. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is an example of a plan view showing a lighting device according to an embodiment of the invention; [Figure 2] 2 is a cross-sectional view of the lighting device of FIG. 1 taken along the line AA. [Figure 3] FIG. 3 is a partial enlarged view of a recess in the substrate of FIG. 2. [Figure 4] 3 is a first modified example of the lighting device of FIG. [Figure 5] 3 is a second modified example of the lighting device of FIG. [Figure 6] 3 is a third modified example of the lighting device of FIG. [Figure 7] 10 is a fourth modified example of the lighting device of FIG. [Figure 8] 10 is a fifth modification of the lighting device of FIG. [Figure 9] 10 is a sixth modified example of the lighting device of FIG. [Figure 10] FIG. 10 is a side cross-sectional view showing another example of a lighting device according to an embodiment of the invention. [Figure 11] 3 is a diagram showing a manufacturing process of the lighting device of FIG. 2. [Figure 12] 3 is a diagram showing a manufacturing process of the lighting device of FIG. 2. [Figure 13] 1. This is a modified example of the recess in the substrate in the lighting device of FIG. [Figure 14] 1. This is a modified example of the recess in the substrate in the lighting device of FIG. [Figure 15] 1 is a plan view of a vehicle to which a lamp having an illumination device according to an embodiment of the invention is applied; [Figure 16] 16 is a diagram showing a detailed configuration of a tail light of the vehicle lamp of FIG. 15. DETAILED DESCRIPTION OF THE INVENTION

[0011] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The technical concept of the present invention is not limited to the embodiments described, and may be modified in various ways. The present invention may be embodied in various forms, and variations between embodiments are within the scope of the technical concept of the present invention. One or more of the components may be selectively combined or substituted for use. Terms (including technical and scientific terms) used in the present examples are clearly and specifically described. Unless otherwise specified, the meaning of the present invention is generally understood by a person having ordinary skill in the art. and commonly used terms such as dictionary-defined terms are interpreted as The meaning can be interpreted in consideration of the context. The terms used herein are for the purpose of describing the embodiments and are not intended to limit the present invention. In this specification, the singular form can also include the plural form unless otherwise specified, and When "A and at least one of B and C" is written, it means A, B, It can include one or more of all combinations that can be combined in C. In describing the components of the present embodiment, terms such as first, second, A, B, (a), (b), etc. Such terms can be used to distinguish the component from other components. The term does not limit the nature or order of the components. And when a component is "linked," "coupled," or "connected" to another component, When described, the component may be directly coupled or connected to other components, or When other components are "connected," "coupled," or "connected" between each component, Also, when it is described as being formed or arranged "above or below" each component, "Above or below" does not only mean that two components are in direct contact, but also that one or more components are in contact with each other. This also includes cases where another component is formed or placed between the two components. When it is expressed as "is below," it means that it is not only the upper direction but also the lower direction based on one component. It can also include the meaning of

[0012] The lighting device according to the present invention is applicable to various lamp devices that require illumination, such as vehicle lamps, It can be applied to home lighting devices or industrial lighting devices, for example, vehicle lamps. If so, headlamps, width lights, turn signals, side mirror lights, fog lights, tail lights ( Tail lamp, backup lamp, brake light, daytime running light, vehicle interior lighting, door The present invention can be applied to scuffs, rear combination lamps, backup lamps, etc. The lighting device can be applied to indoor and outdoor advertising devices, display devices, and various train applications. There are also others that are currently being developed and commercialized, or that may be realized through future technological developments. It can be said that this technology is applicable to all lighting-related fields and advertising-related fields.

[0013] <First Example> FIG. 1 is a plan view of an example of a lighting device according to an embodiment of the invention, and FIG. 2 is a plan view of the lighting device of FIG. 1 to 3 are examples of cross-sectional views taken along the line AA, and FIG. 3 is a partially enlarged view of the recess in the substrate of FIG. 2. 3, the lighting device 100 includes a substrate 11, a light source 21 disposed on the substrate 11, and a a resin layer 31 disposed on the substrate 11; and a wavelength conversion layer 6 disposed on the resin layer 31. The lighting device 100 converts the light emitted from the light source 21 into a surface light. The lighting device 100 can convert the light emitted from the light source 21 into colored light. It can emit light as a surface through the resin.

[0014] The substrate 11 is disposed below the light source 21 and the resin layer 31, and is a base member. The substrate 11 can function as a printed circuit board (PCB) The substrate 11 is made of, for example, a resin. PCB, Metal Core PCB, Flexible PCB le) Includes at least one of PCB, ceramic PCB or FR-4 PCB The substrate 11 can be, for example, a flexible PCB or a rigid PCB. The substrate 11 includes a wiring layer (not shown) on the top thereof, and the The wiring layer is electrically connected to the light source 21. The substrate 11 has a protective layer for protecting the wiring layer. The protective layer can protect the wiring layer and prevent the incident light from entering the wiring layer. The protective layer may be made of a light-reflecting material. The protective layer may include a solder resist material. The substrate 11 may have a rectangular, square, or other various shapes in top view. The shape may be a square or a bar having a curved surface. A connector (not shown) for supplying power is arranged in a portion of the plate 11. For example, the substrate 11 may include a transparent material. is provided, so that the light emitted from the light source 21 is incident on the top, side and bottom surfaces of the substrate 11. The upper surface of the substrate 11 has an X-axis-Y-axis plane, and the thickness of the substrate 11 is The height may be a height in a Z direction perpendicular to the X and Y directions. Here, the X direction is a first direction. The Y direction is a second direction perpendicular to the X direction, and the Z direction is a second direction perpendicular to the X and Y directions. The substrate 11 may have a length in the first direction X and a length in the second direction Y. For example, the length in the first direction X is shorter than the length in the second direction Y. The length in the second direction Y may be set to be at least twice the length in the first direction X. The thickness of the substrate 11 is 0.5 mm or less, for example, in the range of 0.3 mm to 0.5 mm. Since the thickness of the substrate 11 is thin, the thickness of the lighting device can be increased. The substrate 11 is provided with a thickness of 0.5 mm or less, so that it can be used as a flexible module. The system can support the following rules:

[0015] The thickness of the lighting device 100 is the distance from the bottom surface of the substrate 11 to the top surface of the wavelength conversion layer 60. The thickness of the lighting device 100 may be the length of the substrate 11 in the first and second directions. The length may be 1 / 3 or less of the short side of the rectangular parallelepiped, but is not limited to this. The thickness of the lighting device 100 is 5.5 mm or less, or is in the range of 4.5 mm to 5.5 mm, or The thickness of the lighting device 100 may be in the range of 4.5 mm to 5 mm. The thickness of the illumination device 1 may be 220% or less, for example, in the range of 180% to 220%. The device 100 is provided with a thickness of less than 5.5 mm, making it a flexible and slim surface light model. When the thickness of the lighting device 100 is less than the above range, If the thickness is less than the above range, the light diffusion space will be reduced, which may cause hot spots. If the module is larger than this, the increased module thickness will result in spatial installation restrictions and reduced design freedom. The lighting device 100 is provided as a module that can be curved due to its thin thickness. This reduces the degree of freedom in designing the lighting device and reduces spatial constraints. It is possible.

[0016] The lighting device 100 may include a reflective member 15 disposed on the substrate 11. The reflecting member 15 reflects light traveling to the upper surface of the substrate 11 by the resin layer 31. The reflecting member 15 is attached to the entire or part of the upper surface of the substrate 11, For example, the reflective member 15 may be attached between the substrate 11 and the resin layer 31. The areas where the light sources 21 are arranged may each have an opening. The reflecting member 15 may be spaced apart from or in contact with the lower end of the side surface of the wavelength conversion layer 60. The reflecting member 15 may be formed in a single layer or a multi-layer structure. The reflecting member 15 may include a material that reflects light, such as a metal or non-metal material. If the material is metal, it may contain a metal layer such as stainless steel, aluminum (Al), or silver (Ag). If it is a non-metallic material, it may be made of white resin or may contain metal oxides or and / or may be air-filled or contain plastic materials, e.g. The reflecting member 15 is made of a white resin material or contains a polyester (PET) material. The reflecting member 15 can be a low reflection film, a high reflection film, a diffuse reflection film, or can include at least one specularly reflective film.

[0017] The light source 21 may include a plurality of light-emitting elements disposed on the substrate 11 . The plurality of light-emitting elements are arranged in N rows and M columns, where N and M are integers equal to or greater than 1, and ≧M. For example, N is 5 rows or more, and M is 2 columns or more. The plurality of light emitting elements may be connected in series, parallel or The plurality of light emitting devices may be connected in series and parallel. Alternatively, the groups may be connected in series or in parallel. The light emitted from the light source 21 is emitted through the resin layer 31. The light emitting element may include an LED chip. The light emitting element may include at least one LED chip of a color. The LED chip is placed on a surface of a resin material and / or a substrate to which a phosphor is added. For example, the light emitting element may be a blue, red or As another example, the light emitting element may emit ultraviolet (UV) or The light emitting element may be an infrared LED. The light emitting element emits light from four sides and the top. The light emitting element may be a flip-type LED chip mounted on the substrate 11. Horizontal or vertical LED chips arranged in a rectangular shape or electrically connected by wires The light source 21 may be provided as a flip chip that emits light from at least five sides. Therefore, the luminance distribution and the directivity angle distribution of the light emitted from the light source 21 are improved. The light source 21 is provided with a thickness of 0.4 mm or less, for example, in the range of 0.2 mm to 0.4 mm. The light source 21 may be an array of micro-sized LED chips. The micro size may be in the range of 5 μm to 100 μm in length on one side. The pitch between the 21 light emitting elements may be the same as or greater than the thickness of the resin layer 31 . The peach may be, for example, 2.5 mm or more, for example, in the range of 2.5 mm to 8 mm or 5 mm to The pitch between such light-emitting elements may be in the range of 7 mm. The light source 21 is disposed on the substrate 11 and is connected to the resin layer 31. The light source 21 can be in contact with the resin layer 31. The resin layer 31 is disposed on the side and top surfaces of the light source 21. The light source 21 is protected and can be in contact with the upper surface of the substrate 11 and / or the reflecting member 15. The resin layer 31 is formed in the region between the light emitting elements and on the top of each of the light emitting elements. The light guides and diffuses the incoming light.

[0018] The resin layer 31 is disposed on the substrate 11. the upper surface of the reflecting member 15, the surface of the light source 21, and The resin layer 31 can seal the light source 21. The resin layer 31 can be formed as a single layer or multiple layers. If it is a single layer, it is made of a layer of transparent resin material, and if it is a multi-layer, it is made of a layer of transparent resin material. A first layer of material and at least one of a diffusion layer, a phosphor layer, or an ink layer on the first layer. As another example, a second layer having a diffusing agent or / and a fluorescent agent may be included in a single resin layer. Impurities such as light particles may be included. For example, embodiments of the invention may include The resin layer 31 is a layer without impurities or a layer to which a small amount of a diffusing agent, for example, 3 wt % or less, is added. The diffusing agent may be a layer made of PMMA (Poly Methyl Methacrylate). Acrylate), TiO2, SiO2, Al2O3, silicone The phosphor may be a red phosphor, a green phosphor, a blue phosphor, or The resin layer 31 may include at least one of a resin or a resin. The resin layer 31 may include a transparent resin material, such as a UV (Ult Resin, silicone or epoxy resin materials The resin layer 31 may have a thickness greater than that of the light source 21. The thickness of the resin layer 31 may be greater than the thickness of the substrate 11. Thickness of the resin layer 31 The thickness of the resin layer 12 may be 5 times or more, for example, in the range of 5 to 9 times, the thickness of the substrate 11. The layer 31 is disposed at the thickness described above to seal the light source 21 on the substrate 11 and to prevent moisture. The resin layer 31 and the front surface of the substrate 11 can be prevented from permeating. The substrate 11 can function as a flexible plate. The thickness of the resin layer 31 may be 4 mm or less, for example, in the range of 2 mm to 4 mm. If is smaller than the range, the hot spot increases, and if is smaller than the range, the luminous intensity The resin layer 31 may have a reduced resistance to the substrate and may limit the flexibility of the substrate. The wavelength conversion layer 60 is disposed between the plate 11 and the wavelength conversion layer 60, and guides and converts the light emitted from the light source 21. When there are no impurities in the resin layer 31, the impurities are diffused and provided to the wavelength conversion layer 60. In this case, the linearity of light is improved. The material of the resin layer 31 has a refractive index of 1. When the refractive index of the resin material is 1.4 or more, the uniformity of light is improved. It may be 8 or less, for example, in the range of 1.1 to 1.8 or in the range of 1.4 to 1.6.

[0019] The resin layer 31 has a polygonal shape or a curved shape when viewed from above. The area of ​​the lower surface of the resin layer 31 is smaller than the area of ​​the upper surface of the substrate 11. The resin layer 31 may be formed on the upper surface of the substrate 11, and may occupy, for example, 60% or more of the upper surface area of ​​the substrate 11. The side surface can be spaced apart from the outer surface of the substrate 11 .

[0020] The wavelength conversion layer 60 is disposed on the resin layer 31. The resin layer 31 may be disposed on the upper surface thereof or on the upper and side surfaces thereof. For example, the wavelength conversion layer 60 may be formed by an upper portion disposed on the upper surface of the resin layer 31 and the The wavelength conversion layer may include a side portion extending from the top edge toward the substrate 11. The side of the wavelength conversion layer 60 can cover the side of the resin layer 31. The top and sides of the wavelength conversion layer 60 can be in contact with the surface of the resin layer 31. When the wavelength conversion layer 60 is a single layer, different The wavelength conversion layer 60 may be formed of a layer of a resin material containing impurities. , may be at least two or three layers, formed of resin material layers having different impurities Each of the resin layers may contain at least one type of impurity.

[0021] As shown in FIGS. 1 and 2, the wavelength conversion layer 60 includes a phosphor layer 41 and an ink layer 51. The phosphor layer 41 may be disposed between the resin layer 31 and the ink layer 51. The phosphor layer 41 is formed on the surface of the resin layer 31. , which extends from the upper surface of the resin layer 31 to the lower end of the side surface. The upper surface of the substrate 11 and / or the upper surface of the reflecting member 15 may be in contact with the The ink layer 51 is formed on the outer surface of the phosphor layer 41 and covers the upper portion 42 and the lower portion 43 of the phosphor layer 41. The side 43 of the phosphor layer 41 can be contacted. The upper portion 52 of the phosphor layer 51 is the upper portion of the wavelength conversion layer 60, and the side portion 43 of the phosphor layer 41 is the upper portion of the wavelength conversion layer 60. The side portion 53 of the ink layer 51 may be the side portion of the wavelength conversion layer 60. The ink layer 51 may be the outermost layer of the wavelength conversion layer 60, and may be the surface cover of the lighting device. The color of the phosphor added to the phosphor layer 41 can be adjusted to the color of the ink. The phosphor layer 41 may be made of a transparent resin material, and the phosphor layer 41 may be made of a transparent resin material. For example, silicone or epoxy materials, or UV (Ultra violet) resin. The phosphor layer 41 may contain a colored phosphor in a transparent material, for example. For example, at least one of red phosphor, blue phosphor, yellow phosphor, green phosphor, and white phosphor The phosphor layer 41 may include a phosphor and a diffusing agent. The thickness of the phosphor layer 41 is 1 mm or less, for example, in the range of 300 μm to 1 mm. The thickness may be in the range of 300 μm to 700 μm. The content of the phosphor is 40 wt % or less, for example, 10 wt % to 23 wt %, based on the weight of the phosphor layer 41. % by weight or 15 wt % to 30 wt %. If the thickness and phosphor content exceed the above range, the light transmission efficiency decreases. If it is small, the wavelength conversion efficiency decreases.

[0022] The phosphor content of the phosphor layer 41 is set to 100% by weight since the ink layer 51 is disposed on the surface. The phosphor content can be low, that is, the light emitted from the light source 21 is The light that has not been wavelength-converted is emitted by the ink layer 51. When a diffusing agent is added to the phosphor layer 41, the phosphor The content of the diffusing agent may be less than the content of the phosphor layer 41 by weight. The content of the diffusing agent may be 3 wt% or less, for example, in the range of 1 wt% to 3 wt%. If the value exceeds the range, the light transmission efficiency decreases, and if the value is below the range, the light distribution becomes uneven. An embodiment of the invention utilizes phosphor and ink particles when removing the diffusing agent. This can reduce hot spots.

[0023] The ink layer 51 may be made of a transparent resin material, such as silicone or epoxy. The ink layer may be made of a silicone material or a UV (Ultra Violet) resin. 51 has a thickness of 1 mm or less, for example, in the range of 300 μm to 1 mm or 300 μm to 70 The ink layer 51 may include ink particles. The ink particles are contained in the ink layer 51 in an amount of 20 wt % or more based on the weight of the ink layer 51. For example, the range of 4 wt% to 20 wt% or 4 wt% to 15 wt% is used. The lighting device 100 can reduce the color difference of the surface color depending on the content of ink particles. The ink layer 51 can be made of a material having a high viscosity and can reduce hot spots. The weight of the ink particles may be smaller than the weight of the phosphor added to the phosphor layer 41. The ink particles can be distributed on the surface of the wavelength conversion layer 60 from the phosphor. As a result, the color of the surface of the wavelength conversion layer 60 may be provided by the color of the ink particles. These ink particles can reduce light transmission and reduce hot spots. The ink particles can include colored ink particles, such as metallic ink, U The ink particles may include at least one of a V ink and a hardened ink. The size of the ink particles may be smaller than the size of the phosphor. The ink may be any one of red, yellow, and blue. (Poly vinyl chloride) ink, PC (Polycarbonate e) Ink, ABS (acrylonitrile butadiene styre e copolymer) ink, UV resin ink, epoxy ink, silicone ink , PP (polypropylene) ink, water-based ink, plastic ink, PM MA (poly methyl methacrylate) ink, PS (Polys tyrene) ink, wherein the ink droplet width Alternatively, the diameter may be 5 μm or less, or may be in the range of 0.05 μm to 1 μm. At least one of the ink particles may be smaller than the wavelength of light. The color may include at least one of red, green, yellow, and blue. The phosphor emits red wavelength light, and the ink particles contain red color. For example, The red color of the ink particles may be darker than the color of the phosphor or the wavelength of light. The ink particles may be of a different color than the color of the light emitted from the light source 21. The ink particles can provide a blocking or blocking effect to incident light.

[0024] The color on the surface of the wavelength conversion layer 60 is provided by the color of the ink particles. It can reduce the difference in color of the appearance image caused by turning on / off the source 21, and reduce the low wavelength conversion efficiency. The light emitted from the light source 21 is converted into fluorescent light by the wavelength conversion layer 60. The wavelength is converted while passing through the light source layer 41, and then the converted wavelength is released through the ink layer 51. The unconverted light is blocked or reflected by the ink layer 51. The converted light can be emitted as surface light through the surface of the wavelength conversion layer 60. The upper portion 42 of the phosphor layer 41 is formed to have the same thickness as or a greater thickness than the side portion 43 of the phosphor layer 41. This improves the wavelength conversion efficiency in the upper part 42 of the phosphor layer 41. Here, the thickness of the upper portion 52 of the ink layer 51 is the same as that of the side portion 53 of the ink layer 51. Alternatively, the ink layer 51 may be formed thicker. The side 43 of the phosphor layer 41 is arranged to allow the phosphor to pass through the top of the substrate 11. The upper portion 42 of the light-emitting layer 41 may be vertical, or may be formed in a shape having an inclined or curved surface. The side portion 53 of the ink layer 51 extends from the top of the substrate 11 to the top 5 of the ink layer 51. The phosphor layer 4 may be formed vertically or in a shape having an inclined or curved surface. The shape of the ink layer 51 can be changed depending on the outer surface of the resin layer 31.

[0025] As shown in FIGS. 1 and 3, the substrate 11 may include a recess 13 in a portion of its side surface. The recess 13 may be a groove recessed inward from the outer surface S1 of the substrate 11. The recess 13 may be a hole or a groove penetrating from the upper surface to the lower surface of the substrate 11. When the recess 13 is a groove, a region of the substrate 11 is formed below the recess 13. The recess 13 has a length W0 (FIG. 1) in the second direction Y, which is 500 μm. The length W0 of the recess 13 may be in the range of 500 μm to 10 mm, for example. If the thickness is smaller than the above range, the filling pressure when injecting the resin layer 31 becomes high or the filling efficiency decreases. If the thickness is greater than the above range, the light leakage will be large. The recess 13 may be spaced a predetermined distance K1 from one corner of the substrate 11. The distance K1 may be 1 to 3 times the length W0 of the recess 13. This prevents the rigidity of the substrate 11 from being reduced due to the space in which the recess 13 is formed. can be done.

[0026] As shown in FIG. 3, the width W1 of the recess 13 is the width W1 of the resin layer 31 from the outer surface S1 of the substrate 11. The distance in the inward direction (e.g., X) is, for example, 0.3 mm or more, e.g., 0.3 mm to 1 The width W1 of the recess 13 may be in the range of 0.0 mm or in the range of 0.3 mm to 5 mm. is variable depending on the distance D1 from the side surface S2 of the wavelength conversion layer 60 to the outer surface S1 of the substrate 11. The distance D1 between the outer surface of the recess 13 and the outer surface S2 of the wavelength conversion layer 60 can be varied. The size of the exposed upper surface of the substrate 11 can be varied, and is 0.3 mm or more, for example, 0.3 The distance D1 may be in the range of 0.3 mm to 0.8 mm or in the range of 1 mm to 1 mm. is the distance between modules that will not affect the modules during the cutting process. The outer surface of the recess 13 may be flush with the side surface of the substrate 11. The distance D2 between the inner surface of the wavelength conversion layer 60 and the inner surface of the recess 13 is 0.1 mm or more, for example For example, it may be in the range of 0.1 mm to 0.4 mm or in the range of 0.1 mm to 0.3 mm. The distance D2 depends on the thickness of the substrate 11, the depth at which the groove 35A is formed, and the inclination angles R1 and R2. If the width W1 of the recess 13 is narrower than the above range, the resin layer 31 is not projected. When the filling pressure is high or the filling efficiency is low, if the pressure is higher than the above range, the light leakage will be large. It becomes.

[0027] The width W1 of the recess 13 may be greater than the thickness of the phosphor layer 41. The width W1 of the recess 13 may be greater than the thickness of the ink layer 51. may be greater than the thickness of the wavelength conversion layer 60. This allows for the formation of waves in the recess 13. The width W1 and the length W0 of the recess 13 are the same. For example, the recess 13 may be provided with a length W0 greater than a width W1. The depth of the recess 13 is equal to the thickness of the substrate 11. The depth of the recess 13 may be equal to or smaller than the thickness of the substrate 11. In this case, the lower surface of the end of the wavelength conversion layer 60 may be exposed to the lower surface of the substrate 11 . When the depth of the recess 13 is smaller than the thickness of the substrate 11, the edge of the wavelength conversion layer 60 The lower surface of the insulating film 12 is spaced apart from the lower surface of the substrate 11 or is not exposed to the lower surface of the substrate 11. Alternatively, the lower side edge of the wavelength conversion layer 60 is disposed within the recess 13 of the substrate 11, The recess 13 of the substrate 11 can be positioned flush with the upper surface of the substrate 11. The total height of the overlapping area or side of the wavelength converting layer 60 is The height of the wavelength conversion layer 60 may be greater than or equal to the height of the wavelength conversion layer 60 disposed on the substrate 10 .

[0028] A portion 35 of the resin layer 31 is disposed in the recess 13. The portions 45 and 55 of the wavelength conversion layer 60 are disposed in the recess 13. A portion 35 of the layer 31 and portions 45, 55 of the wavelength converting layer 60 are disposed in the recess. The inner region of the resin layer 31 can overlap with the resin layer 31 in the vertical direction. The recess 13 is vertically overlapped with the side portions (e.g., 43, 53) of the wavelength conversion layer 60. The recess 13 can be formed by wrapping the side 43 of the phosphor layer 41 and the The recess 13 can overlap the side 53 of the ink layer 51 in the vertical direction. The lower end 45 of the side portion 43 of the phosphor layer 41 and the lower end 53 of the side portion 53 of the ink layer 51 are At least one or all of the 55 will be placed.

[0029] The substrate 11 has an exposed portion 35 of the resin layer 31 on the outer surface of the recess 13. The outer surface of the part 35 of the resin layer 31 can be exposed from the outside of the wavelength conversion layer 60. The outer surface of the portion 35 of the resin layer 31 is disposed on the outer side of the ink layer 31. The part 35 of the resin layer 31 is disposed outside the outer surface of the side part 53 of the substrate 51. The recess 13 is located below the upper surface of the plate 11, and its outer surface is in contact with the wavelength conversion layer 60. The portion 35 of the resin layer 31 can protrude outward from the outer surface. The recess 13 may have a protrusion protruding toward the substrate 11. The lower end of the portion 35 of the resin layer 31 may be exposed. The lower surface of the recess 13 is provided with a lower end of the side portion 43 of the phosphor layer 41 and a side portion 51 of the ink layer 51. At least one or all of the lower ends of the recess 13 may be exposed. The area of ​​the lower surface of the side portion 53 of the ink layer 51 is 1 / 2 times the area of ​​the lower surface of the side portion 43 of the phosphor layer 41. It may be equal to or larger than the lower surface area of ​​the lower end.

[0030] The part 35 of the resin layer 31 is located at the lower end (e.g., 45, 55) and an outer surface exposed to the outside. The lower end of the side of the long conversion layer 60 extends between the inner portion 13A and the outer portion. The lower end 43 of the side portion 43 of the phosphor layer 41 is disposed between 13A and the outside. The lower end 45 of the side portion 43 of the phosphor layer 41 and the lower end 55 of the side portion 53 of the ink layer 51 The lower ends 45 and 55 of the wavelength conversion layer 60 disposed in the recess 13 The side surface may be inclined at a first angle R1. The wavelength converting element disposed within the recess 13 may be formed at an acute angle with respect to the flat lower surface. The outer surface of the lower end of the layer 60 may be inclined at a second angle R2. , may be formed at an acute angle with respect to the horizontal lower surface of the substrate 11. The second angle R2 may be the same or different, and may range from 1 to 60 degrees or from 5 to 30 degrees. Such a first angle R1 and a second angle R2 may be in the range. The angle of the groove 35A formed by cutting the part 35 of the resin layer 31 can be changed. The cutting is performed from the lower surface of the portion 35 of the resin layer 31 toward the upper portion of the recess 13. The cut groove 35A is formed in the recess 13 in a triangular or The cut groove 35A may be formed in a rectangular shape. The area of ​​the groove 35A may be smaller than that of the recess 13. The area of ​​the lower surface of the groove 35A is larger than that of the upper surface of the groove 35A. The inner surface of the lower end of the wavelength conversion layer 60 may be in contact with the substrate 11 or in contact with the recess. The phosphor layer 41 can contact the surface or side of the phosphor layer 41. The edge 45 can contact the inner surface and both sides of the recess 13. The lower end 55 of the side portion 53 of the 51 can contact both sides of the recess 13. As a result, the lower end of the wavelength conversion layer 60 comes into contact with the inner surface of the substrate 11, which is the side surface of the recess 13. Therefore, the space between the wavelength conversion layer 60 and the substrate 11 can be reduced or eliminated, Light leakage can be blocked.

[0031] Here, the thickness of the lower end 45 of the phosphor layer 41 is the same as the thickness of the side portion 43 of the phosphor layer 41. Alternatively, the phosphor layer 41 may be formed to have a small thickness. The phosphor layer 41 is formed along the inclined inner surface of the groove 35A. The ink layer 51 is formed to a thickness equal to or less than the thickness of the side portion 43. The thickness of the ink layer 51 may be the same as or greater than the thickness of the side portion 53. The lower end 55 of the ink layer 51 is in contact with the inclined outer surface of the cut groove 35A and the phosphor. The ink layer 51 is filled between the outer surface of the lower end 45 of the ink layer 41, so that the ink layer 51 is filled between the outer surface of the lower end 45 of the ink layer 41 and the outer surface of the side 53 of the ink layer 51. The thickness of the resin layer 31 is greater than the thickness of the portion 35 of the resin layer 31 disposed in the recess 13. The upper side surface is stepped relative to the outer surface S2 of the wavelength conversion layer 60 or the outer surface of the ink layer 51. It may also be provided in a structure.

[0032] Referring to the first modification of FIG. 4, the recess 13 of the substrate 11 is formed by extending a part of the resin layer 31. The part of the resin layer 31 disposed in the recess 13 may be recessed or protruded. The wavelength conversion layer 50 has an upper portion 50A extending therethrough. The wavelength conversion layer 50 may include a lower end 50C, e.g., a side 50B. The lower end 50C of B extends into the recess 13 of the substrate 11 or is a part of the resin layer 31. The wavelength conversion layer 50 is formed as a single layer and has a phosphor layer therein. and ink particles. The amount of the phosphor may be greater than the content of the ink particles. It is added in an amount of 23 wt% or less or in a range of 10 wt% to 23 wt% relative to the weight of the replacement layer 50, The ink particles are contained in an amount of 12 wt % or less, for example, 4 wt % to 12 wt % of the weight of the wavelength conversion layer 50. The phosphor content in the wavelength conversion layer 50 may be in the range of 12 wt %. the content of the ink particles is 3 wt % or more higher than the weight of the wavelength conversion layer 50, or The weight of the ink particles is smaller than the weight of the phosphor. Therefore, the ink particles are concentrated in the area adjacent to the surface of the wavelength conversion layer 50 rather than in the phosphor. As a result, the color of the surface of the wavelength conversion layer 50 can be distributed in accordance with the color of the ink particles. These ink particles can suppress light transmission, You can lower the pot.

[0033] The lower end 50C of the wavelength conversion layer 50 has a width or The lower end 50C of the wavelength conversion layer 50 may be provided with a thickness of 1 / 2 mm from the upper end of the inner surface to the The lower end is farther away from the outer surface of the substrate 11, and the further from the upper end to the lower end of the outer surface, the more forward the The recess 13 may be a groove or a hole. If the groove is provided, the depth from the upper surface of the substrate 11 is smaller than the thickness of the substrate 11. The lower end of the wavelength conversion layer 50 disposed in the groove is formed below the substrate 11. In such a structure, when the thickness of the substrate 11 is 1 mm or more, In this case, a groove is provided in the substrate 11. The lower end 50C of the wavelength conversion layer has an outer surface facing the resin. Since it is covered by a portion 35 of the oil layer 31 , it is not exposed on the outer surface of the substrate 11 .

[0034] Referring to the second modification shown in FIG. 5, the recess 13 of the substrate 11 is disposed in a part of one side surface S1. A portion 35 of the resin layer 31 extends or protrudes into the recess 13 of the substrate 11. Here, the lower ends of the side portions (e.g., 43, 53) of the wavelength conversion layer 60 are The recess 13 is disposed above the side portions (e.g., 43, 53) of the wavelength conversion layer 60. The end can contact a portion 35 of the resin layer 31 disposed in the recess 13. That is, the lower end of the side portion 43 of the phosphor layer 41 of the wavelength conversion layer 60 and the side portion 53 of the ink layer 51 At least one or both of the lower ends are exposed to the surface of the recess 13. The resin layer 31 disposed in the recess 13 can contact a portion 35 of the resin layer 31. The portion 35 of the wavelength conversion layer 60 is perpendicular to the side (e.g., 43, 53) of the wavelength conversion layer 60. The portion 35 of the resin layer 31 disposed in the recess 13 can be burlapped. The side 43 of the phosphor layer 41 and the side 53 of the ink layer 51 overlap in the vertical direction. It is possible.

[0035] The outer surface of the portion 35 of the resin layer 31 is disposed in the same plane as the outer surface S1 of the substrate 11. The outer surface of the part 35 of the resin layer 31 is the outer surface S2 of the wavelength conversion layer 60. is disposed outside the outer surface of the ink layer 51. Here, the part 3 of the resin layer 31 The lower side edge of the wavelength conversion layer 60 contacts the surface of the The distance between the edge and the substrate 11 is narrowed. This reduces the distance between the substrate 11 and the wavelength conversion layer 60. Light leakage can be reduced through the partition.

[0036] Referring to the third modification of FIG. 6, a groove 35A is cut in the recess 13 of the substrate 11. Then, a light blocking portion 37 can be formed in the cut groove 35A. The light blocking portion 37 is formed in the groove 35A and is disposed on the inner surface of the substrate 11 or the surface of the recess 13. The light blocking portion 37 can be in contact with the surface of the recess 13. The light blocking portion 37 may contain organic or inorganic filler in the resin. Such a light blocking portion 37 may contain a filler that reflects or absorbs light. This can be done.

[0037] Referring to the fourth and fifth modified examples shown in FIGS. 7 and 8, the recess 13 of the substrate 11 has a A portion 35 of the resin layer 31 may be extended or protruded. The lower end of the phosphor layer 41 or the ink layer 51 of the length conversion layer 60 is disposed. The lower end 47 of the phosphor layer 41 is disposed in the recess 13. The lower end 47 of the layer 41 fills the area of ​​the recess 13, so that the light of the light source 21 leaks directly. Here, the lower end of the side portion 53 of the ink layer 51 is formed by the phosphor The ink layer 41 may be contacted on a lower end 47 extending from the side 43 of the layer 41. The lower end of the side portion 53 of the phosphor layer 51 is vertically overlapped with the lower end portion 57 of the side portion 43 of the phosphor layer 41. As shown in FIG. 8, the recess 13 has a recess under the ink layer 51. The end 57 of the ink layer 51 is then positioned so that the lower end 57 of the ink layer 51 fills the recess 13. Since the phosphor layer is formed on the ink surface, light leakage due to ink particles can be prevented. The lower end of the side portion 43 of the ink layer 41 is in contact with the lower end portion 57 extending from the side portion 53 of the ink layer 51. The lower end of the side portion 43 of the phosphor layer 41 is in contact with the side portion 53 of the ink layer 51. 7 and 8. As shown, a part 35 of the resin layer 31 and a lower end 4 of the phosphor layer 41 are disposed in the recess 13 of the substrate 11. 7 or the lower end 57 of the ink layer 51 is formed, the moisture penetration is suppressed, and light leakage is prevented. can be suppressed.

[0038] Referring to the sixth modification of FIG. 9, in the illumination device 100A, the substrate 11 and the light source 21 The resin layer 31 disposed thereon includes a convex curved surface Ra extending from the upper surface to the lower end of the side surface. The wavelength conversion layer 60A is stacked on the upper surface of the resin layer 31 and the curved surface Ra. For example, the upper surface and the curved surface Ra of the resin layer 31 are covered with the upper 4 of the phosphor layer 41A. The upper portion 52 and the side portion 53 of the ink layer 51A are extended. As a result, the side portion 43 of the phosphor layer 41A and the side portion 53 of the ink layer 51A The side portion 43 of the phosphor layer 41A and the ink layer 51A are provided with a convex curved surface. The side portion 53 is formed with the same curvature as the curved surface Ra of the resin layer 31A. A portion 35 of the resin layer 31A may extend or protrude into the recess 13. The recess 13 of the substrate 11 is provided with a lower end 45 and / or a lower end 46 of the side portion 43 of the phosphor layer 41A. The lower end 55 of the side 53 of the ink layer 51 may be extended or protruded.

[0039] 10, the substrate 11 is provided without a recess 13. A resin layer 31 is disposed to cover the light source 21 and the light source 11. A side surface 36 of the resin layer 31 is corrugated. The wave can be exposed or protruded through the open hole 63 of the wave conversion layer 60. The length conversion layer 60 includes a first region 62 having one side corresponding to one side of the resin layer 31. The first region 62 of the wavelength conversion layer 60 and the side surface portion 36 of the resin layer 31 can be The side surface portion 36 of the resin layer 31 can be overlapped in the vertical direction. The first region 62 may be in contact with the plate 11 and / or the reflecting member 15. The side edge regions of the conversion layer 60, e.g., the side edges of the phosphor layer 41 and / or the ink layer 5 The wavelength conversion layer 60 may be formed on the first region 62 and the substrate 11. A hole 63 may be provided on the resin layer 31 through the hole 63. The first region 62 of the wavelength conversion layer 60 may have a front surface 36 exposed or protruding. The hole 63 is disposed on the wavelength conversion layer 60. The height of the hole 63 is 0.5 mm. The thickness may be, for example, in the range of 0.2 mm to 0.5 mm. The same material as the phosphor layer 41 and / or the ink layer 51 is formed on the insulating layer 36 .

[0040] The manufacturing process of the lighting device will be described with reference to FIGS.

[0041] As shown in (A) and (B) of FIG. 11, a light source 21 having a plurality of light emitting elements is provided on a substrate 11. The plurality of light emitting elements are spaced apart at a predetermined interval to reduce optical interference between them. This allows for improved heat dissipation efficiency. It may be in the range of 2.5 mm to 8 mm or 5 mm or more, for example, in the range of 5 mm to 7 mm. The spacing between the light emitting elements can be varied depending on the size of the LED chip. In a part of the substrate 11, recesses 13 are arranged, each penetrating from the upper surface to the lower surface of the substrate 11. The recesses 13 are disposed in the regions between adjacent unit modules. The lower portion of the recess 13 is supported by the lower frame 91. 1 is placed on the substrate, and an upper frame 81 is attached to the upper part of the substrate. The upper frame 81 has a resin injection hole. The resin injection hole 85 is connected to the recess 13. Inside each, an empty space 83 for a resin layer covering the light source 21 is arranged.

[0042] As shown in FIG. 11(C), liquid resin is injected through the resin injection hole 85. The injection pressure of the resin at this time is such that the resin fills the entire area through the empty space 83 of the upper frame 81. At this time, the recess 13 is filled with the resin.

[0043] As shown in FIG. 11(C) and FIG. 12(D), when the resin hardens, the upper frame 81 and At this time, the resin layer 31 is formed so that the adjacent modules pass through the recess 13. A part of the resin layer 31 filled in the recess 13 is cut to form a groove. The groove 35 formed by cutting a portion of the resin layer 31 is the recess 35A. The recess 13 is formed in a concave shape from the lower surface to the upper surface, and is open at the top. The groove 35 of the recess 13 is a hole-shaped groove formed from the bottom surface of the recess 13 to the depth of the recess 13. Alternatively, the recess 13 may be formed in a groove shape having a depth less than that of the recess 13 .

[0044] As shown in FIG. 12(E), a wavelength conversion layer 60 is formed on the surface of the resin layer 31. The length conversion layer 60 is formed by at least one of the phosphor layer 41 and the ink layer 51 or both. In this case, the wavelength conversion layer 60 may be formed by injection molding or dispensing. The phosphor layer 41 of the wavelength conversion layer 60 may be formed through a bonding process. 1, and the ink layer 51 is formed on the surface of the phosphor layer 41. A portion of the wavelength conversion layer 60 extends into the groove 35A of the recess 13 (FIG. 12(F)). For example, a portion of the phosphor layer 41 extends into the groove 35A of the recess 13, and the The resin layer 31 can be contacted with a portion 35 of the resin layer 31 disposed in the groove 35A of the recess 13. A portion of the ink layer 51 extends into the groove 35A of the recess 13. The phosphor layer 41 can contact the portion of the phosphor layer 41 disposed in the groove 35A. When the phosphor layer 41 and the ink layer 51 are laminated, the phosphor layer 41 and the ink layer 51 are laminated on the lower surface of the recess 13. 12(E) and 12(F), the lower surface of a part of the ink layer 51 can be exposed. When cutting, adjacent wavelengths are cut into the size of a unit module. The substrate 11 between the recesses 13 is cut through the spaces between the conversion layers 60 to form individual Each module can be manufactured.

[0045] As shown in FIG. 13, the recesses 13 and 13C of the substrate 11 are formed on the side surfaces S1 of the substrate 11 opposite to each other. The recesses 13 and 13C of the substrate 11 are formed in the wavelength conversion regions S1a and S1b, respectively. The first recesses 13 may be spaced apart at a distance greater than the width of the layer 60 in the second direction. 11 is recessed from the first side surface S1a to the second side surface S2b, and the first side surface S2a of the wavelength conversion layer 60 The second recess 13C can overlap the second side of the substrate 11 in the vertical direction. The surface S1b is recessed in the direction of the first side surface S1a, and the second side surface S2b of the wavelength conversion layer 60 is recessed in the direction perpendicular to the second side surface S2b of the wavelength conversion layer 60. This allows the recesses 13 and 13C of the substrate 11 to overlap each other. By separating the recesses 13 and 13C from each other, the efficiency of filling the resin is improved. Each of these can be selected from the structures shown in FIGS.

[0046] As shown in FIG. 14, the recesses 13 and 13C of the substrate 11 are formed on the same first side surface S1a of the substrate 11. The recesses 13 and 13C of the substrate 11 are formed in the first and second layers of the wavelength conversion layer 60. The first and second recesses 13 and 13C can be spaced apart by at least half the length in the X direction. , recessed from the first side surface S1a of the substrate 11 toward the second side surface S1b, and the first The first recess 13 and the side surface S2a can overlap each other in the vertical direction. The two recesses 13C are arranged at the same distance from each other at the center of the first side surface S1a of the substrate 11 in the second direction Y. As a result, the recesses 13 and 13C of the substrate 11 are arranged in different regions. As a result, the efficiency of filling the resin is improved. 0 structures can be selected.

[0047] FIG. 15 is a plan view of a vehicle to which a vehicle lamp incorporating an illumination device according to an embodiment is applied. FIG. 16 shows a vehicle lamp having a lighting device or a lighting device disclosed in the embodiment. This is a drawing.

[0048] 15 and 16, in a moving body or vehicle 900, a front lamp 85 0 can include one or more lighting modules, and the driving time of these lighting modules can be determined by They are individually controlled to function not only as normal headlights, but also as a means for the driver to open the vehicle door. If you do, the welcome light or celebration effect will be activated. The lamps can also provide additional functions such as daytime running lights, high-speed The present invention can be applied to a headlight, low beam, fog lamp, or turn signal lamp. The taillight 800 comprises a number of lamp units 810 supported by a housing 801. , 812, 814, 816. For example, the lamp units 810, 812 , 814, 816 are the first lamp unit 810 arranged on the outside, A second lamp unit 814 is disposed around the inside of the mat 810. 814 includes third and fourth lamp units 814 and 816, respectively, disposed inside the The first to fourth lamp units 810, 812, 814, and 816 can be implemented as follows. The lighting device disclosed in the examples can be selectively applied, and the lamp can be attached to the outside of the lighting device. Red lens covers or for lighting characteristics of units 810, 812, 814, 816 A white lens cover may be provided. The lighting device disclosed in the embodiment applied to 814 and 816 emits surface light with a uniform distribution. The first and second lamp units 810 and 812 can be formed in a curved or linear shape. At least one of a square, angular, inclined or flat shape, or a mixture of these The first and second lamp units 810, 812 may be provided in a structure One or more of the first lamp units 810 may be provided for each taillight. The second lamp unit 812 is provided as a brake light, and the third lamp unit The fourth lamp unit 816 is provided as a target lamp. The structure and location of such an illumination lamp may be It can be changed.

[0049] The features, structures, effects, etc. described in the above embodiments may be used in at least one embodiment of the present invention. The present invention is not limited to any one embodiment. The features, structures, effects, etc. of the present invention may be easily understood by a person having ordinary skill in the art to which the present invention pertains. The examples can be combined or modified in various ways. The above description should be interpreted as including the contents of the present invention. Although the above description is given with a view to the present invention, it is merely an example and is not intended to limit the scope of the present invention. A person having ordinary skill in the art would understand the present invention to the extent that it does not deviate from the essential characteristics of this embodiment. Therefore, various modifications and applications not exemplified above are possible. Each of the components presented can be implemented in a modified form. Any variations in application are to be construed as falling within the scope of the invention as defined in the appended claims. should be.

Claims

1. a substrate including a recess; a light source disposed above the substrate; a resin layer disposed on the substrate; a wavelength conversion layer disposed on the resin layer, a portion of the resin layer disposed within a recess in the substrate; a portion of the wavelength converting layer disposed over a recess in the substrate; The outermost surface of the portion of the resin layer disposed in the recess of the substrate is the wavelength conversion layer. A lighting device located outside the inner surface of the

2. The recess of the substrate overlaps with the side surfaces of the wavelength conversion layer and the resin layer in the vertical direction. The lighting device of claim 1 .

3. a substrate including a recess; a light source disposed above the substrate; a resin layer disposed on the substrate; a wavelength conversion layer disposed on the resin layer, The light source includes a plurality of light-emitting elements arranged in N rows and M columns, the wavelength conversion layer includes an upper portion disposed on an upper surface of the resin layer and connected to the upper portion; a side portion disposed on a side surface of the resin layer, the recess in the substrate vertically overlaps a portion of a side of the wavelength converting layer; Lighting equipment.

4. 2. The method according to claim 1, wherein a part of the recess of the substrate is located outside the outer surface of the resin layer.

4. The lighting device according to claim 3.

5. The other part of the recess of the substrate is located inside the outer surface of the resin layer. The described lighting device.

6. 4. The method of claim 1, wherein the width of the recess in the substrate is greater than the thickness of the wavelength conversion layer. Lighting equipment.

7. 10. The method of claim 1, wherein the depth of the recess in the substrate is less than or equal to the thickness of the substrate.

4. The lighting device according to claim 3.

8. The lower end of the wavelength conversion layer overlapping the recess of the substrate is 4. The illumination device according to claim 1 or 3, wherein the illumination device is disposed within the substrate or is flush with the upper surface of the substrate. Lighting device.

9. The maximum height of a region of the wavelength conversion layer that overlaps the recess of the substrate is 4. The wavelength conversion layer according to claim 1, wherein the height of the wavelength conversion layer is greater than or equal to the height of the wavelength conversion layer disposed on the plate. The described lighting device.

10. The lighting device according to claim 1 or 3, wherein the recess is a groove or a hole.

11. The light emitting element includes an LED chip and a resin portion disposed on the LED chip. The lighting device of claim 3 comprising a material.

12. the wavelength conversion layer includes a phosphor layer and an ink layer disposed on the phosphor layer. Item 1 or 3, the lighting device according to item 1 or 3.

13. The wavelength conversion layer is formed by mixing a colored phosphor and a colored ink.

4. The lighting device according to claim 3.

14. The pitch between two adjacent light emitting elements among the plurality of light emitting elements is 5 mm or more.

4. The lighting device according to claim 3.

15. A substrate; a light source disposed above the substrate; a resin layer disposed on the substrate; a wavelength conversion layer disposed on the resin layer, the wavelength conversion layer includes a first side surface corresponding to the first side surface of the resin layer; The first side surface of the wavelength conversion layer is in contact with a part of the resin layer in a direction perpendicular to the substrate. A lighting device including a first region that burlaps.

16. 16. The lighting device of claim 15, wherein the first region of the wavelength-converting layer is spaced apart from the substrate. Place.

17. 17. The method of claim 16, wherein a portion of the resin layer is disposed between the first region and the substrate. Lighting equipment.

18. the wavelength conversion layer includes holes; 16. The lighting device of claim 15, wherein the first region is an area above the hole.

Citation Information

Patent Citations

  • Electronic part, electronic part material, and manufacture of electronic part

    JP1996107161A

  • Optical semiconductor element

    JP2002222998A

  • Photoelectric device

    JP2002223001A

  • Means and method for correcting color of led

    JP2003152227A

  • Light emitting device

    JP2011134762A