Apparatus for providing vaporized reactants and related reactor systems and methods

Abstract

An apparatus for supplying a vaporized reactant to a reaction chamber is disclosed.SOLUTION: The disclosed apparatus includes a process control chamber in fluid communication with the source vessel, and an injection gas source in fluid communication with the process control chamber and configured to allow adjustment of pressure in the process control chamber. A reactor system including an apparatus for supplying a vaporized reactant to a reaction chamber is also disclosed. A method of supplying vaporized reactants to a reaction is also disclosed.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates generally to the fields of semiconductor processing equipment, related processing methods, and device and integrated circuit manufacturing. More specifically, the present disclosure relates generally to apparatus for supplying vaporized reactants and reactor systems including such apparatus. Additionally, the present disclosure relates generally to methods for forming vaporized reactants. [Background technology]

[0002] During semiconductor processing, various reactant vapors can be supplied to a reaction chamber. In some applications, reactant vapors can be generated from source chemicals in the solid or liquid phase (at ambient pressure and temperature). These solid or liquid sources can be heated to produce vaporized reactants for reaction processes such as deposition. Chemical vapor deposition (CVD) may require the supply of a continuous flow of reactant vapor to a reaction chamber. Atomic layer deposition (ALD), pulsed CVD, and hybrids thereof, including time- and space-divided pulsed processes, may require a continuous flow or pulsed supply of reactant vapor to a reaction chamber, depending on the desired configuration. Reactant vapors from solid or liquid sources may also be useful for other types of chemical reactions used in the semiconductor industry (e.g., etching, doping, etc.), as well as other types of chemical reactions in various other industries. However, improved control over vapor-phase delivery from solid or liquid source chemicals is still continually required, due in part to the small process window between evaporation and decomposition temperatures, low vapor pressure, and the need for uniform dosage.

[0003] Any discussion set forth in this section, including the discussion of problems and solutions, is included in this disclosure solely for the purpose of providing a context for the disclosure, and should not be construed as an admission that any or all of the discussion was known at the time the invention was made or that it constitutes prior art. Summary of the Invention [Means for solving the problem]

[0004] This Summary introduces some concepts in a simplified form that are described in more detail below. This Summary is not necessarily intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0005] Various embodiments of the present disclosure relate to an apparatus for supplying vaporized reactants to a reaction chamber and a reactor system including such an apparatus. The apparatus can include a process control chamber positioned downstream of and in fluid communication with a source container. The process control chamber can be configured to collect (e.g., accumulate) and transfer the vaporized reactants to a reaction chamber downstream of the process control chamber. An inlet gas source can be fluidly connected to the process control chamber and configured to supply an inlet gas to the process control chamber to enable pressure control within the process control chamber. For example, a measured amount of vaporized reactant can be transferred to the process control chamber, and an inlet gas can be supplied to the process control chamber to provide a known amount of vaporized reactant at a desired pressure within the process control chamber. A controlled amount of vaporized reactant can then be transferred to the reaction chamber at the desired pressure.

[0006] In one aspect, a reactor system is provided that includes a reaction chamber configured to receive one or more substrates; a source container configured to supply vaporized reactants to the reaction chamber, the source container having a source inlet, a source outlet, and an interior space adapted to receive a volume of source material; a process control chamber disposed between the source container and the reaction chamber, the process control chamber in fluid communication with the source container and the reaction chamber and configured to collect a measured amount of vaporized reactants from the source container before delivering the measured amount of vaporized reactants to the reaction chamber at a predetermined pressure; and an dosing gas source configured to supply an dosing gas to the process control chamber to enable adjustment of the pressure in the process control chamber.

[0007] In some embodiments, the reactor system further comprises a pressure transducer configured to monitor the pressure in the process control chamber.

[0008] In some embodiments, the reactor system further comprises a process control valve disposed between the dosing gas source and the process control chamber and configured to control the supply of the dosing gas to the process control chamber.

[0009] In some embodiments, the reactor system further comprises a control system configured in communication with at least the pressure transducer and the process control valve to enable controlled delivery of the vaporized reactant at a desired pressure from the process control chamber to the reaction chamber.

[0010] In some embodiments, the injection gas source is configured to increase the pressure in the process control chamber above the pressure in the reaction chamber.

[0011] In some embodiments, the injection gas source is fluidly coupled directly to the process control chamber.

[0012] In some embodiments, the reactor system further comprises a flow measurement device in fluid communication with the outlet of the source vessel, the flow measurement device configured to measure an output flow of vaporized reactant from the source vessel to the process control chamber.

[0013] In another aspect, an apparatus is provided for supplying vaporized reactant to a reaction chamber, the apparatus comprising: a source container having a source inlet, a source outlet, and an interior space adapted to receive a volume of source material; a process control chamber downstream from the source container and in fluid communication with the source container, the process control chamber configured to collect a measured amount of vaporized reactant from the source container before delivering the measured amount of vaporized reactant to the reaction chamber at a predetermined pressure; and an dosing gas source configured to supply an dosing gas to the process control chamber to enable adjustment of pressure within the process control chamber.

[0014] In some embodiments, the apparatus further comprises a pressure transducer configured to measure the pressure in the process control chamber.

[0015] In some embodiments, the apparatus further comprises a process control valve disposed between the dosing gas source and the process control chamber and configured to control the supply of the dosing gas to the process control chamber.

[0016] In some embodiments, the apparatus further comprises a control system configured in communication with at least the pressure transducer and the process control valve to enable controlled output of the vaporized reactant at a desired pressure from the process control chamber.

[0017] In some embodiments, the dosing gas source is fluidly connected to a gas delivery conduit disposed between the source vessel and the process control chamber, or is directly connected to the process control chamber.

[0018] In some embodiments, the apparatus further comprises a flow measurement device in fluid communication with the outlet of the source vessel, the flow measurement device configured to measure an output flow of vaporized reactant from the source vessel to the process control chamber.

[0019] In another aspect, a method of supplying vaporized reactant to a reaction chamber is provided, the method including vaporizing a solid or liquid reactant contained in a source container to form a reactant vapor; transferring the reactant vapor to a process control chamber; collecting the reactant vapor in the process control chamber; supplying an inlet gas to the process control chamber from an inlet gas source fluidly coupled to the process control chamber to enable adjustment of pressure in the process control chamber; and transferring the reactant vapor from the process control chamber to the reaction chamber.

[0020] In some embodiments, the method further includes measuring the pressure in the process control chamber with a pressure transducer.

[0021] In some embodiments, the method further includes controlling delivery of the reactant vapor from the process control chamber to the reaction chamber with a control system configured in communication with the process control chamber and the pressure transducer.

[0022] In some embodiments, transferring the reactant vapor to the process control chamber includes transferring a measured amount of the reactant vapor to the process control chamber.

[0023] In some embodiments, the measured amount of reactant vapor is determined by measuring pressure changes within a process control chamber using a pressure transducer.

[0024] In some embodiments, the measured amount of reactant vapor is further determined by a flow measurement device in fluid communication with the outlet of the source vessel, the flow measurement device configured to measure the output flow of vaporized reactant from the source vessel to the process control chamber.

[0025] In some embodiments, the method further includes controlling the pressure in the process control chamber to a value greater than the pressure in the reaction chamber.

[0026] For purposes of summarizing the invention and the advantages achieved over the prior art, certain objects and advantages of the invention have been described hereinabove. Of course, it will be understood that not necessarily all such objects or advantages may be achieved in accordance with any particular embodiment of the invention. Thus, for example, those skilled in the art will recognize that the invention may be embodied or performed in a manner that achieves or optimizes one advantage or group of advantages as taught or suggested herein, without necessarily achieving other objects or advantages as may be taught or suggested herein.

[0027] All of these embodiments are intended to be within the scope of the invention disclosed herein. These and other embodiments will become readily apparent to those skilled in the art from the following detailed description of certain embodiments, taken in conjunction with the accompanying drawings, although the invention is not limited to any particular embodiment disclosed. [Brief explanation of the drawings]

[0028] To easily identify the description of any particular element or operation, the most significant digit(s) of a reference number refers to the figure number in which that element is first introduced.

[0029] A more complete understanding of the embodiments of the present disclosure may be obtained by reference to the detailed description and claims when considered in conjunction with the following illustrative drawings.

[0030] [Figure 1] FIG. 1 shows an exemplary reactor system. [Figure 2] FIG. 2 illustrates a reactor system according to one or more embodiments of the present disclosure. [Figure 3]FIG. 3 illustrates a method of supplying vaporized reactants to a reaction chamber according to one or more embodiments of the present disclosure.

[0031] It will be understood that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help to improve understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0032] The descriptions of exemplary embodiments of methods and compositions provided below are merely exemplary and intended for illustrative purposes only. The following descriptions are not intended to limit the scope of the present disclosure or the claims. Moreover, the recitation of multiple embodiments having stated features or steps is not intended to exclude other embodiments having additional features or steps, or other embodiments incorporating different combinations of the stated features or steps.

[0033] The illustrations presented herein are not intended to be actual representations of any particular materials, apparatus, structures, or devices, but are merely representations used to describe embodiments of the present disclosure.

[0034] As used herein, the term "chemical vapor deposition" (CVD) may refer to any process in which a substrate is exposed to one or more volatile precursors that react and / or decompose on the substrate surface to produce a desired deposit.

[0035] As used herein, the term "atomic layer deposition" (ALD) can refer to a vapor deposition process in which deposition cycles, preferably multiple consecutive deposition cycles, are performed in a reaction chamber. Typically, during each deposition cycle, a precursor is chemisorbed to a deposition surface (e.g., a substrate surface or a previously deposited underlying surface, such as material from a previous ALD cycle) to form a monolayer or quasi-monolayer that does not readily react with additional precursors (i.e., a self-limiting reaction). If desired, a reactant (e.g., another precursor or reactant gas) can then be introduced into the reaction chamber for use in converting the chemisorbed precursor to the desired material on the deposition surface. Typically, this reactant can further react with the precursor. Additionally, a purge step may also be utilized during each cycle to remove excess precursor from the reaction chamber after conversion of the chemisorbed precursor and / or to remove excess reactants and / or reaction by-products from the reaction chamber. Additionally, as used herein, the term atomic layer deposition is also meant to include processes designated by related terms, such as chemical vapor deposition atomic layer deposition, atomic layer epitaxy (ALE), molecular beam epitaxy (MBE), gas source MBE, or metalorganic MBE, as well as chemical beam epitaxy when carried out using alternating pulses of precursor compositions, reactive gases, and purge (e.g., inert carrier) gases.

[0036] As described in more detail below, various details and embodiments of the present disclosure may be utilized in conjunction with processes performed in a reactor system, e.g., a semiconductor manufacturing system, to control the amount of reactants available for reaction in a reaction chamber. A "process" may include such processes, such as deposition, etching, purging, and the like, that may be performed during ALD, CVD, and other processes on a substrate (e.g., a wafer). "Process materials" (or "source materials" or "source materials") may be provided to the reaction chamber from source containers, which may be in solid or liquid form and may include precursors, reactants, and the like used during processes performed during operation of the reactor system.

[0037] Apparatus and associated reactor systems with direct control of the amount of chemical (i.e., precursor and / or reactant dose) delivered to a reaction chamber can provide improved process control and quality of layers deposited by such apparatus and systems. Accordingly, various embodiments of the present technology disclose apparatus and associated reactor systems that include a process control chamber positioned between a source container and a reaction chamber and configured to provide controlled delivery of vaporized reactants to the reaction chamber. Exemplary apparatus and systems can be configured to deliver known amounts of chemical (i.e., precursor / reactant dose) to the reaction chamber by directly controlling the pressure within the process control chamber, as well as controlling the chemicals provided to the reaction chamber, as described in detail below.

[0038] Referring now to the figures, Figure 1 is a functional block diagram of a reactor system 100 known in the art. As shown in Figure 1, the reactor system 100 comprises a reaction chamber 102 that is supplied with one or more vaporized reactants from a source vessel 104. The reaction chamber 102 is fluidly connected to the source vessel 104 by a gas conduit 106 configured to transfer the vaporized reactants from the source vessel 104 to the reaction chamber 102. A carrier gas source 108 is positioned upstream of the source vessel 104 and is fluidly connected to the source vessel 104 via a carrier conduit 110. The carrier gas source 108 is configured to supply a carrier gas (e.g., argon or nitrogen) to the source vessel 104. The source vessel 104 comprises an interior space 116 that contains a heated solid or liquid source. The source container 104 is configured to vaporize the source material contained within the interior space 116, and a carrier gas supplied from a carrier gas source 108 is entrained with the vaporized reactant and then supplied to the reaction chamber 102 via a gas conduit 106.

[0039] The reactor system 100 of FIG. 1 increases the amount of vaporized reactant supplied to the reaction chamber 102 by continuously sweeping or pushing the vaporized reactant disposed in the headspace of the source container 104 downstream using an inert carrier gas, such as Ar or N. In such reactor systems, the use of a carrier gas source upstream of the source container can result in dilution of the vaporized reactant. In such reactor systems, dilution of the vaporized reactant can complicate monitoring and control of the concentration of the vaporized reactant (i.e., the reactant dosage) supplied to the reaction chamber, which can adversely affect control of the process performed in the reaction chamber 102 of the reactor system 100. Additionally, in such reactor systems, the amount of vaporized reactant disposed in the headspace of the source container 104 can deplete over time as the vaporized reactant is continuously transferred to the reaction chamber. Depletion of the vaporized reactant can result in a change in the amount of reactant saturated in the carrier gas over time, which can further adversely affect the ability to control the supply of vaporized reactant to the reaction chamber.

[0040] FIG. 2 is a functional block diagram of a reactor system 200 according to various embodiments of the present disclosure. The reactor system 200 may comprise an ALD reactor system, a CVD reactor system, or a plasma-enhanced (PE) reactor system, such as a PECVD reactor system or a PECVD reactor system. According to embodiments of the present disclosure, the reactor system 200 may comprise a reaction chamber 202. In some embodiments, the reaction chamber 202 may comprise a single-wafer ALD reactor or a batch ALD reactor component or assembly, in which deposition occurs simultaneously on multiple substrates. In some embodiments, the reaction chamber 202 may form part of a cluster tool in which various different processes are performed for the fabrication of integrated circuits. In some embodiments, a flow-type reactor and associated reaction chamber may be utilized. In some embodiments, a high-volume manufacturing-capable single-wafer ALD reactor and associated reaction chamber may be used. In other embodiments, a batch reactor containing multiple substrates may be used. For embodiments in which a batch ALD reactor is used, the number of substrates may be in the range of 10 to 200, in the range of 50 to 150, or in the range of 100 to 130. While reactor system 200 is illustrated including a single reaction chamber 202, it should be understood that reactor system 200 can include multiple reaction chambers and / or multiple process modules, each including one or more reaction chambers. For example, reactor system 200 may include one or more dual-chamber modules, each including two reaction chambers, and / or one or more quad-chamber modules, each including four reaction chambers. Reaction chamber 202 may be configured to accept one or more substrates. For example, reaction chamber 202 may include a substrate support 208, on which a substrate (such as substrate 210) may be positioned for processing within reaction chamber 202.

[0041] According to embodiments of the present disclosure, reactor system 200 may include a source vessel 204. In such embodiments, source vessel 204 may be configured to supply one or more vaporized reactants to reaction chamber 202. In various embodiments, source vessel 204 includes a source inlet 212, a source outlet 214, and an interior space 216 adapted to contain and / or receive a volume of source material. The source vessel may include one or more heating devices for heating a source (solid or liquid) contained within interior space 216 to form vaporized reactants.

[0042] According to embodiments of the present disclosure, reactor system 200 may include a process control chamber 220. In such embodiments, process control chamber 220 may meter and / or control the amount of vaporized reactant supplied to reaction chamber 202 along reactant supply conduit 222. Process control chamber 220 may function as an intermediate volume where reactant is collected in vapor form before being delivered to reaction chamber 202. Using process control chamber 220 to control the supply of reactant vapor to reaction chamber 202 may beneficially allow for more precise control of reactant vapor dosage to reaction chamber 202.

[0043] According to embodiments of the present disclosure, the process control chamber 220 may be disposed between the source container 204 and the reaction chamber 202. In such embodiments, the process control chamber 220 may be positioned downstream of the source container 204. In such embodiments, the process control chamber 220 may be positioned upstream of the reaction chamber 202. In some embodiments, the process control chamber 220 may be positioned downstream of the source container 204 and upstream of the reaction chamber 202. In some embodiments, the process control chamber 220 may be in fluid communication with the source container 204 (via the gas conduit 206) and the reaction chamber 202 (via the reactant supply conduit 222). In such embodiments, the process control chamber 220 may be configured to collect and / or accumulate vaporized reactants from the source container 204 prior to delivering the vaporized reactants to the reaction chamber 202 along the reactant supply conduit 222.

[0044] According to embodiments of the present disclosure, reactor system 200 may include an inlet gas source 224 in fluid communication with process control chamber 220. In such embodiments, inlet gas source 224 may be configured to supply an inlet gas to process control chamber 220 to enable adjustment of the pressure within process control chamber 220. In one aspect, inlet gas source 224 is fluidly coupled directly to process control chamber 220. In another aspect, inlet gas source 224 is fluidly coupled to a gas delivery conduit disposed between source container 204 and process control chamber 220. In some embodiments, source container 204 does not include a carrier gas source positioned downstream of the source container (as illustrated for reactor system 100 in FIG. 1 ). In such embodiments, vaporized reactants may be transported to process control chamber 220 by vapor pressure alone. In such embodiments, inlet gas source 224 and the inlet gas provided therefrom may be employed as a “push gas” to transport vaporized reactants from process control chamber 220 to reaction chamber 202.

[0045] According to embodiments of the present disclosure, reactor system 200 may further include a pressure transducer 230. In such embodiments, pressure transducer 230 may be configured to monitor the pressure within process control chamber 220. In some embodiments, pressure transducer 230 may be directly integrated with process control chamber 220.

[0046] According to embodiments of the present disclosure, reactor system 200 may further include a process control valve 236. In such embodiments, process control valve 236 may be located upstream of process control chamber 220 and downstream of dosing gas source 224. In the illustrated embodiment, process control valve 236 may be located between dosing gas source 224 and reaction chamber 202. In some embodiments, process control valve 236 may be directly integrated with process control chamber 220. In some embodiments, process control valve 236 may comprise a binary on-off valve that allows or blocks the flow of dosing gas from dosing gas source 224 to process control chamber 220 to control the pressure within process control chamber 220.

[0047] According to embodiments of the present disclosure, reactor system 200 may further include a control system 234. In such embodiments, control system 234 may be configured to communicate with at least process control valve 236 and pressure transducer 230. In some embodiments, control system 234 may determine the amount (e.g., concentration / dose) of vaporized reactant provided to process control chamber 220 by monitoring (e.g., using pressure transducer 230) changes in pressure within process control chamber 220 as the vaporized reactant is transferred from source vessel 204 to process control chamber 220 via gas conduit 206. In such embodiments, once a predetermined, measured amount of vaporized reactant has been transferred to process control chamber 220, control system 234 may be in communication with process control valve 236 and open process control valve 236, thereby allowing the flow of dosing gas from dosing gas source 224 to process control chamber 220. In such embodiments, the pressure within the process control chamber 220 can be set (i.e., sealed) at a desired level (using a flow of inlet gas) before opening the reactant supply valve 238 and transferring a predetermined, measured amount of vaporized reactant from the process control chamber 220 to the reaction chamber 202 at the desired pressure. Thus, in some embodiments, the process control chamber 220 is configured to collect a measured amount of vaporized reactant from the source container 204 before delivering the measured amount of vaporized reactant to the reaction chamber 202 at the predetermined pressure.

[0048] According to embodiments of the present disclosure, control system 234 may include a feedback circuit that may be electrically connected and in communication with pressure transducer 230 and process control valve 236 via control lines 242 (e.g., electrical or optical lines, or alternatively, wireless communication). Additionally, control system 234 may control the operation of various components of reactor system 200. In some embodiments, control system 234 may include processing electronics configured to control the operation of one or more of the valves, such as process control valve 236 and reactant supply valve 238. Additionally, control system 234 may be configured to communicate with and control source vessel 204 and reaction chamber 202 (and various components therein). Although illustrated as a single structure in FIG. 2 , it should be understood that control system 234 may include multiple controllers or subsystems having processors, memory devices, and other electronic components that control the operation of various components of reactor system 200. As used herein, the term “control system” includes any combination of individual controller devices and processing electronics, which may be integrated with or connected to other devices (valves, sensors, etc.). Thus, in some embodiments, control system 234 may include a centralized controller that controls the operation of multiple (or all) system components. In some embodiments, control system 234 may include multiple distributed controllers that control the operation of one or more system components. Control sequences may be hardwired or programmed into control system 234.

[0049] In some embodiments, the injection gas source 224 is configured to increase the pressure in the process control chamber 220 above the pressure in the reaction chamber 202. In some embodiments, the pressure in the process control chamber may be increased above the pressure in the reaction chamber 202 to ensure that a sufficient amount of vaporized reactant is supplied to the reaction chamber to enable saturation of the reactant on the substrate 210 disposed in the reaction chamber 202. For example, a pressurized dose of vaporized reactant may be beneficial if the substrate 210 disposed in the reaction chamber 202 includes high aspect ratio features. In other examples, a pressurized dose of vaporized reactant may be beneficial due to conductance losses in various components (not shown) of the reaction chamber 202, such as a showerhead, a valve manifold, or additional gas lines / valves.

[0050] According to embodiments of the present disclosure, reactor system 200 may further include a flow measuring device 232 in fluid communication with source outlet 214 of source vessel 204. In such embodiments, flow measuring device 232 may be configured to measure the output flow of vaporized reactant provided from source vessel 204 to process control chamber 220. In some embodiments, the total amount of vaporized reactant provided to process control chamber 220 may be monitored by flow measuring device 232. In such embodiments, flow measuring device 232 may include an in-line mass flow monitor (MFM) or other sensor and device capable of monitoring the mass flow rate of the vaporized reactant. In such embodiments, control system 234 may be configured in communication with at least process control valve 236, pressure transducer 230, and flow measuring device 232. In some embodiments, control system 234 may determine the amount of vaporized reactant provided to process control chamber 220 by monitoring flow measuring device 232 as the vaporized reactant is transferred from source vessel 204 to process control chamber 220. For example, the flow measuring device 232 may be used in conjunction with the pressure transducer 230 to determine the amount of vaporized reactant transferred to the process control chamber 220. In such an example, the pressure within the process control chamber 220 can be set (i.e., sealed) at a desired level (using a flow of dosing gas) before opening the reactant supply valve 238 and transferring a predetermined, measured amount of vaporized reactant (determined by the flow measuring device 232 and / or the pressure transducer 230) from the process control chamber 220 to the reaction chamber 202 at the desired pressure. In some embodiments, an additional flow measuring device (not shown) can be positioned between the dosing gas source 224 and the process control chamber 220 to monitor and control the mass flow rate of the dosing gas from the dosing gas source 224 to the process control chamber 220.

[0051] As discussed above, it can be difficult to control the amount of vaporized reactant transferred to the reaction chamber 202. Beneficially, the reactor system 200 (of FIG. 2) can include feedback control of the pressure in the process control chamber 220 to control the pressure of the measured amount of vaporized reactant provided from the process control chamber 220 to the reaction chamber 202. For example, the process control valve 236 can be actuated by the control system 234 to close or open based on the measured pressure (e.g., from the pressure transducer 230) within the process control chamber 220. In another aspect, the reactor system 200 (of FIG. 2) can include feedback control of the flow of vaporized reactant to the process control chamber 220 using the flow measurement device 232 to control the amount of vaporized reactant provided from the process control chamber 220 to the reaction chamber 202. For example, the process control valve 236 may be actuated by the control system 234 to close or open based on the amount of vaporized reactant transferred to the process control chamber 220 as measured by the flow measurement device 232 and the pressure within the process control chamber 220 (e.g., from the pressure transducer 230).

[0052] According to embodiments of the present disclosure, reactor system 200 may also optionally include a bulk replenishment source 240 configured to resupply source material (i.e., solid or liquid source) to source vessel 204. In some embodiments, bulk replenishment source 240 may also include a carrier gas source configured to supply carrier gas to the source vessel. In alternative embodiments, reactor system 200 does not include a carrier gas source configured to supply carrier gas to the source vessel.

[0053] Various embodiments of the present disclosure also provide an apparatus for supplying vaporized reactants to a reaction chamber. According to examples of the present disclosure, the apparatus can include a source container including a source inlet, a source outlet, and an interior space adapted to receive a volume of source material. According to examples of the present disclosure, the apparatus can further include a process control chamber downstream of and in fluid communication with the source container. In such examples, the process control chamber can be configured to collect and transfer the vaporized reactants to the reaction chamber downstream of the process control chamber. According to examples of the present disclosure, the apparatus can further include an injection gas source in fluid communication with the process control chamber. In such examples, the injection gas source can be configured to supply injection gas to the process control chamber to enable adjustment of the pressure within the process control chamber. In some embodiments, the injection gas source can be fluidly coupled to a gas delivery conduit disposed between the source container and the process control chamber. In some embodiments, the injection gas source can be fluidly coupled directly to the process control chamber.

[0054] According to embodiments of the present disclosure, the apparatus may further include a pressure transducer configured to measure pressure within the process control chamber.

[0055] According to embodiments of the present disclosure, the apparatus may further include a process control valve disposed between the dosing gas source and the process control chamber. In such embodiments, the process control valve may be configured to control the supply of the dosing gas to the process control chamber.

[0056] According to embodiments of the present disclosure, the apparatus may further include a control system configured in communication with at least the pressure transducer and the process control valve to enable control of the output of vaporized reactant at a desired pressure from the process control chamber.

[0057] According to embodiments of the present disclosure, the apparatus may further include a flow measurement device in fluid communication with the outlet of the source vessel. In such embodiments, the flow measurement device may be configured to measure the output flow of vaporized reactant from the source vessel to the process control chamber.

[0058] Various embodiments of the present disclosure also provide a method for supplying vaporized reactant to a reaction chamber.

[0059] Referring again to the figures, Figure 3 illustrates an exemplary method 300 for providing vaporized reactant to a reaction chamber. In such a method, the reaction chamber may comprise, for example, reaction chamber 202 of reactor system 200.

[0060] According to an embodiment of the present disclosure, method 300 can include vaporizing a solid or liquid reactant contained in a source vessel to form a reactant vapor (step 302).

[0061] According to embodiments of the present disclosure, method 300 may further include transferring the reactant vapor to a process control chamber (step 304). In such embodiments, method 300 may further include transferring a measured amount of the reactant vapor to the process control chamber. In some embodiments, the measured amount of the reactant vapor is determined by measuring a pressure change in the process control chamber using a pressure transducer. In some embodiments, the measured amount of the reactant vapor is further determined by a flow measurement device in fluid communication with an outlet of the source vessel. In such embodiments, the flow measurement device may be configured to measure an output flow of vaporized reactant from the source vessel to the process control chamber.

[0062] According to an embodiment of the present disclosure, the method 300 may include collecting the reactant vapor in a process control chamber (step 306).

[0063] According to embodiments of the present disclosure, method 300 may include supplying an inlet gas to the process control chamber from an inlet gas source fluidly coupled to the process control chamber to enable adjustment of the pressure in the process control chamber (step 308). In some embodiments, controlling the pressure in the process control chamber may include controlling the pressure to a value greater than the pressure in the reaction chamber.

[0064] According to embodiments of the present disclosure, method 300 may include transferring a reactant vapor from a process control chamber to a reaction chamber (step 310). In some embodiments, a measured amount of reactant vapor is transferred to the reaction chamber at a known pressure.

[0065] For purposes of summarizing the invention and the advantages achieved over the prior art, certain objects and advantages of the invention have been described hereinabove. Of course, it will be understood that not necessarily all such objects or advantages may be achieved in accordance with any particular embodiment of the invention. Thus, for example, those skilled in the art will recognize that the invention may be embodied or performed in a manner that achieves or optimizes one advantage or group of advantages as taught or suggested herein, without necessarily achieving other objects or advantages as may be taught or suggested herein.

[0066] All of these embodiments are intended to be within the scope of the invention disclosed herein. These and other embodiments will become readily apparent to those skilled in the art from the following detailed description of certain specific embodiments, which refer to the accompanying drawings, but the invention is not limited to any particular embodiment disclosed.

Claims

1. 1. A reactor system comprising: a reaction chamber configured to receive one or more substrates; a source vessel configured to supply vaporized reactant to the reaction chamber, the source vessel comprising a source inlet, a source outlet, and an interior space adapted to receive a volume of source material; a process control chamber disposed between the source vessel and the reaction chamber, the process control chamber being in fluid communication with the source vessel and the reaction chamber; collecting a measured amount of the vaporized reactant from the source vessel; and a process control chamber configured to deliver the measured amount of vaporized reactant to the reaction chamber at a predetermined pressure; an dosing gas source in fluid communication with the process control chamber, the dosing gas source configured to supply an dosing gas to the process control chamber to enable adjustment of a pressure within the process control chamber.

2. The reactor system of claim 1 , further comprising a pressure transducer configured to monitor the pressure within the process control chamber.

3. 3. The reactor system of claim 2, further comprising a process control valve disposed between the dosing gas source and the process control chamber and configured to control the supply of the dosing gas to the process control chamber.

4. 4. The reactor system of claim 3, further comprising a control system configured in communication with at least the pressure transducer and the process control valve to enable controlled delivery of the vaporized reactant from the process control chamber to the reaction chamber at the predetermined, desired pressure.

5. 5. The reactor system of claim 4, wherein the injection gas source is configured to increase the pressure in the process control chamber above the pressure in the reaction chamber.

6. The reactor system of claim 5 , wherein the injection gas source is directly fluidly connected to the process control chamber.

7. 10. The reactor system of claim 1, further comprising a flow measurement device in fluid communication with an outlet of the source vessel, the flow measurement device configured to measure an output flow of the vaporized reactant from the source vessel to the process control chamber.

8. 1. An apparatus for delivering vaporized reactant to a reaction chamber, comprising: a source container having a source inlet, a source outlet, and an interior space adapted to receive a volume of source material; a process control chamber downstream of and in fluid communication with the source vessel, collecting a measured amount of the vaporized reactant from the source vessel; and a process control chamber configured to deliver the measured amount of vaporized reactant to the reaction chamber at a predetermined pressure; an dosing gas source in direct fluid communication with the process control chamber, the dosing gas source configured to supply dosing gas to the process control chamber to enable adjustment of pressure within the process control chamber; a flow measurement device in fluid communication with the source outlet of the source vessel, the flow measurement device configured to measure an output flow of the vaporized reactant from the source vessel to the process control chamber, the flow measurement device being positioned downstream of the source vessel and upstream of the process control chamber.

9. The apparatus of claim 8 , further comprising a pressure transducer configured to measure the pressure within the process control chamber.

10. 10. The apparatus of claim 9, further comprising a process control valve disposed between the dosing gas source and the process control chamber and configured to control the supply of the dosing gas to the process control chamber.

11. 11. The apparatus of claim 10, further comprising a control system configured in communication with at least the pressure transducer, the flow measurement device, and the process control valve to enable controlled output of the vaporized reactant at a predetermined pressure from the process control chamber to the reaction chamber based on the measured pressure within the process control chamber.

12. 12. The apparatus of claim 11, wherein the dosing gas source is fluidly connected to a gas delivery conduit disposed between the source vessel and the process control chamber, or is directly connected to the process control chamber.

13. 13. The apparatus of claim 12, wherein the control system is configured to open the process control valve to supply the inlet gas to the process control chamber based on a measured amount of the vaporized reactant supplied from the source container determined by the flow measurement device.

14. 1. A method for delivering vaporized reactant to a reaction chamber, comprising: vaporizing a solid or liquid reactant contained within a source vessel to form a reactant vapor; transporting the reactant vapor to a process control chamber; collecting the reactant vapor in the process control chamber; providing an insufflation gas to the process control chamber from an insufflation gas source fluidly coupled to the process control chamber to enable adjustment of pressure within the process control chamber; and transporting the reactant vapor from the process control chamber to the reaction chamber.

15. The method of claim 14 , further comprising measuring the pressure in the process control chamber with a pressure transducer.

16. 16. The method of claim 15, further comprising controlling delivery of the reactant vapor from the process control chamber to the reaction chamber with a control system configured in communication with the process control chamber and the pressure transducer.

17. 17. The method of claim 16, wherein transferring the reactant vapor to the process control chamber comprises transferring a measured amount of the reactant vapor to the process control chamber.

18. 20. The method of claim 17, wherein the measured amount of reactant vapor is determined by measuring pressure changes in the process control chamber using the pressure transducer.

19. 20. The method of claim 18, wherein the measured amount of reactant vapor is further determined by a flow measurement device in fluid communication with an outlet of the source vessel, the flow measurement device configured to measure an output flow of the vaporized reactant from the source vessel to the process control chamber.

20. 16. The method of claim 15, further comprising controlling the pressure in the process control chamber to a value greater than the pressure in the reaction chamber.

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