Transfer device, transfer method, and semiconductor device manufacturing method

Abstract

To provide a stage device capable of holding a substrate at an appropriate position, and to provide an alignment method thereof.SOLUTION: A conveyance device according to the present embodiment is a conveyance device 600 for conveying a substrate 100 in order to irradiate the substrate 100 with a linear laser beam 15, and includes a flotation unit 10 having a carry-in region into which the substrate 100 is carried and configured to float the substrate on an upper surface thereof, a first holding mechanism configured to hold the substrate on the flotation unit, a first moving mechanism configured to move the first holding mechanism in a first conveyance direction inclined from a line direction of the laser beam, a plurality of pusher pins 501 disposed in the carry-in region of the flotation unit and provided to be movable up and down so as to receive the substrate from a transfer machine configured to transfer the substrate, and a rotating mechanism 68 disposed between the plurality of pusher pins in the carry-in region of the flotation unit and configured to rotate the substrate.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a transfer device, a transfer method, a transfer method, and a method for manufacturing a semiconductor device. [Background technology]

[0002] Patent Document 1 discloses a laser annealing apparatus for forming a polycrystalline silicon thin film. In Patent Document 1, a projection lens focuses laser light onto a substrate so that the laser light forms a linear irradiation area. This crystallizes the amorphous silicon film to form a polysilicon film.

[0003] In Patent Document 1, a levitation unit levitates a substrate, and a transport unit transports the substrate. Furthermore, the levitation unit has a common loading and unloading position for the substrate. The transport unit transports the substrate along each side of the levitation unit. Then, the substrate circulates twice above the levitation unit, so that the laser light is irradiated onto almost the entire surface of the substrate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2018-64048 Summary of the Invention [Problem to be solved by the invention]

[0005] It is desirable for such a transport device of a laser irradiation device to transport substrates appropriately so that the laser irradiation process can be carried out quickly and stably.

[0006] Other objects and novel features will become apparent from the description of this specification and the accompanying drawings. [Means for solving the problem]

[0007] According to one embodiment, a transport device is a transport device that transports a substrate to irradiate the substrate with a line-shaped laser light, and includes an input area into which the substrate is loaded, a levitation unit that levitates the substrate on its upper surface, a first holding mechanism that holds the substrate on the levitation unit, a first moving mechanism that moves the first holding mechanism in a first transport direction that is inclined from the line direction of the laser light when viewed from above so as to change the irradiation position of the laser light on the substrate, a plurality of pusher pins that are arranged in the input area of ​​the levitation unit and are capable of being raised and lowered to receive the substrate from a transfer machine that transfers the substrate, and a rotation mechanism that is arranged between the plurality of pusher pins in the input area of ​​the levitation unit and rotates the substrate.

[0008] According to one embodiment, a transport device is a transport device that transports a substrate in order to irradiate the substrate with a line-shaped laser beam, and includes a carry-in area into which the substrate is carried, and includes a levitation unit that levitates the substrate on an upper surface thereof, a first holding mechanism that holds the substrate on the levitation unit, a first moving mechanism that moves the first holding mechanism in a first transport direction that is inclined from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate, and a second moving mechanism that is arranged in the carry-in area of ​​the levitation unit and is capable of being raised and lowered to receive the substrate from a transfer machine that transfers the substrate. the end floating unit is disposed on the transfer machine side of the floating unit and floats the end of the substrate on its upper surface; a pusher bar that moves up and down in conjunction with the pusher pins to receive the substrate from the transfer machine and extends along the transfer direction of the transfer machine; a second holding mechanism that is disposed between the end floating unit and the end floating unit and holds the substrate; and a second holding mechanism that moves the second holding mechanism in a second transport direction so that the second holding mechanism moves between the end floating unit and the end floating unit.

[0009] According to one embodiment, a transport device is a transport device that transports a substrate in order to irradiate the substrate with a line-shaped laser beam, and includes a plurality of levitation unit cells, a levitation unit that levitates the substrate on its upper surface, a holding mechanism that holds the substrate on the levitation unit, a moving mechanism that moves the holding mechanism in a transport direction that is inclined from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate, and a nozzle unit that is provided in a gap between adjacent levitation unit cells and that sprays gas toward an edge of the substrate.

[0010] According to one embodiment, a transfer method is a transfer method for transferring a substrate to a transfer device that transfers the substrate to irradiate the substrate with a line-shaped laser beam, the transfer device having a carry-in area into which the substrate is carried, and including a levitation unit that levitates the substrate on an upper surface thereof, a first holding mechanism that holds the substrate on the levitation unit, a first moving mechanism that moves the first holding mechanism in a first transport direction that is inclined from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate, and a second moving mechanism that is disposed in the carry-in area of ​​the levitation unit and moves the substrate. The levitation unit includes a plurality of pusher pins that are movable up and down to receive the substrate from a transfer machine that loads the substrate, and a rotation mechanism that is disposed between the plurality of pusher pins in the loading area of ​​the levitation unit and rotates the substrate. The transfer method includes: (A1) receiving the substrate loaded into the loading area by the transfer machine by raising the plurality of pusher pins; (A2) moving the transfer machine to a waiting position outside the loading area; and (A3) lowering the plurality of pusher pins to lower the substrate to the levitation height of the levitation unit.

[0011] According to one embodiment, a transfer method is a transfer method for transferring a substrate to a transfer device that transfers the substrate to be irradiated with a line-shaped laser beam, the transfer device having a carry-in area into which the substrate is carried, and including a levitation unit that levitates the substrate on its upper surface, a first holding mechanism that holds the substrate on the levitation unit, a first moving mechanism that moves the first holding mechanism in a first transport direction that is inclined from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate, a plurality of pusher pins that are arranged in the carry-in area of ​​the levitation unit and are provided so as to be able to rise and fall so as to receive the substrate from a transfer machine that transfers the substrate, an end levitation unit that is arranged on the transfer machine side of the levitation unit and that levitates an end of the substrate on its upper surface, and a second moving mechanism that receives the substrate from the transfer machine. the transfer device includes a pusher bar that rises and falls in conjunction with the pusher pins to receive the substrate and extends along the transfer direction of the transfer device; the end floating unit and a second holding mechanism that is arranged between the end floating unit and the end floating unit and holds the substrate; and a second holding mechanism that moves the second holding mechanism in a second transport direction so that the second holding mechanism moves between the end floating unit and the end floating unit, and the transfer method includes: (B1) a step of raising the multiple pusher pins and pusher bar to receive the substrate carried into the loading area by the transfer device; (B2) a step of moving the transfer device to a standby position outside the loading area; and (B3) a step of lowering the multiple pusher pins and pusher bar to the floating height of the floating unit.

[0012] According to one embodiment, a transport method is a transport method for transporting a substrate using a transport device in order to irradiate the substrate with a line-shaped laser beam, the transport device comprising a plurality of levitation unit cells, a levitation unit that levitates the substrate on its upper surface, a holding mechanism that holds the substrate on the levitation unit, a moving mechanism that moves the holding mechanism in a transport direction that is inclined from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate, and a nozzle unit that is provided in a gap between adjacent levitation unit cells and sprays gas toward an edge of the substrate, the method comprising: (C1) a step of transporting the substrate in the transport direction by the moving mechanism moving the holding mechanism; and (C2) a step of the nozzle unit spraying gas toward the edge of the substrate during transport.

[0013] According to one embodiment, a method for manufacturing a semiconductor device includes: (s1) forming an amorphous film on a substrate; (s2) transferring the substrate on which the amorphous film has been formed to a transport device; and (s3) irradiating the substrate with a line-shaped laser beam while transporting the substrate using the transport device, thereby annealing the amorphous film to crystallize the amorphous film and form a crystallized film, wherein the transport device includes an input area into which the substrate is loaded, a levitation unit that levitates the substrate on an upper surface thereof, a first holding mechanism that holds the substrate above the levitation unit, and a first transport direction that is tilted from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate. a first moving mechanism that moves the holding mechanism of the substrate; a plurality of pusher pins that are arranged in the loading area of ​​the levitation unit and are capable of being raised and lowered to receive the substrate from a transfer machine that transfers the substrate; and a rotation mechanism that is arranged between the plurality of pusher pins in the loading area of ​​the levitation unit and rotates the substrate, and (s2) the transferring step comprises: (sa1) a step of receiving the substrate loaded into the loading area by the transfer machine by raising the plurality of pusher pins; (sa2) a step of moving the transfer machine to a standby position outside the loading area; and (sa3) a step of lowering the plurality of pusher pins to lower the substrate to the levitation height of the levitation unit.

[0014] According to one embodiment, a method for manufacturing a semiconductor device includes: (s1) forming an amorphous film on a substrate; (s2) transferring the substrate on which the amorphous film has been formed to a transfer device; and (s3) irradiating the substrate with a line-shaped laser beam while transferring the substrate using the transfer device, thereby annealing the amorphous film to crystallize the amorphous film and form a crystallized film, wherein the transfer device has a carry-in area into which a substrate is carried, and includes a levitation unit that levitates the substrate on an upper surface thereof, a first holding mechanism that holds the substrate above the levitation unit, a first moving mechanism that moves the first holding mechanism in a first transport direction that is inclined from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate, a plurality of pusher pins that are arranged in the carry-in area of ​​the levitation unit and are provided so as to be able to rise and fall to receive the substrate from a transfer device that transfers the substrate, and a plurality of pusher pins that are provided so as to be able to rise and fall to receive the substrate from a transfer device that transfers the substrate, and a lifting mechanism that lifts the lifting mechanism. an end floating unit disposed on the transfer machine side of the unit and floating the end of the substrate on its upper surface; a pusher bar that rises and falls in conjunction with the pusher pins to receive the substrate from the transfer machine and extends along the transfer direction of the transfer machine; a second holding mechanism disposed between the end floating unit and the end floating unit and holding the substrate; and a second holding mechanism that moves the second holding mechanism in a second transport direction so that the second holding mechanism moves between the end floating unit and the end floating unit; and the system comprises: (sb1) a step of receiving the substrate carried into the loading area by the transfer machine by raising the multiple pusher pins and pusher bar; (sb2) a step of moving the transfer machine to a standby position outside the loading area; and (sb3) a step of lowering the multiple pusher pins and pusher bar to lower the substrate to the floating height of the floating unit.

[0015] According to one embodiment, a method for manufacturing a semiconductor device includes: (t1) forming an amorphous film on a substrate; (t2) transporting the substrate on which the amorphous film has been formed using a transport device; and (t3) irradiating the substrate being transported by the transport device with a line-shaped laser beam to anneal the amorphous film so as to crystallize the amorphous film and form a crystallized film, wherein the transport device includes a plurality of levitation unit cells, a levitation unit that levitates the substrate on its upper surface, and a holding mechanism that holds the substrate above the levitation unit. a moving mechanism that moves the holding mechanism in a transport direction inclined from the line direction of the laser light in a top view so as to change the irradiation position of the laser light on the substrate, and a nozzle unit that is provided in a gap between adjacent ones of the levitation unit cells and sprays gas toward the edge of the substrate, and the (t2) transporting step comprises: (tc1) a step in which the moving mechanism moves the holding mechanism to transport the substrate in the transport direction; and (tc2) a step in which the nozzle unit sprays gas toward the edge of the substrate during transport. [Effects of the Invention]

[0016] According to the embodiment, substrate transportation suitable for the laser irradiation process can be realized. [Brief explanation of the drawings]

[0017] [Figure 1] FIG. 2 is a top view schematically showing the configuration of a transport device used in the laser irradiation device. [Figure 2] FIG. 2 is a side cross-sectional view schematically showing a laser irradiation device. [Figure 3] FIG. 2 is a top view schematically showing a detailed configuration of the transport device. [Figure 4] FIG. 10 is a top view for explaining the transport process in the transport device. [Figure 5] FIG. 10 is a top view for explaining the transport process in the transport device. [Figure 6] FIG. 10 is a top view for explaining the transport process in the transport device. [Figure 7]FIG. 10 is a top view for explaining the transport process in the transport device. [Figure 8] FIG. 10 is a top view for explaining the transport process in the transport device. [Figure 9] FIG. 10 is a top view for explaining the transport process in the transport device. [Figure 10] FIG. 10 is a top view for explaining the transport process in the transport device. [Figure 11] FIG. 10 is a top view for explaining the transport process in the transport device. [Figure 12] FIG. 4 is a side cross-sectional view showing the arrangement of a nozzle unit of the conveying device. [Figure 13] FIG. 2 is a diagram showing the configuration of a nozzle unit. [Figure 14] 10A and 10B are diagrams illustrating a configuration of a nozzle unit according to a modified example. [Figure 15] FIG. 10 is a top view showing an example of the arrangement of nozzle units. [Figure 16] FIG. 10 is a top view showing a third arrangement example of the nozzle unit. [Figure 17] FIG. 10 is a diagram showing the difference in height between the end floating unit and the floating unit. [Figure 18] 10A and 10B are diagrams illustrating modified examples of the end floating unit. [Figure 19] FIG. 10 is a top view schematically showing a base having a relief hole. [Figure 20] FIG. 10 is a side view schematically showing a base having a relief hole. [Figure 21] FIG. 10 is a top view for explaining the substrate loading operation. [Figure 22] FIG. 10 is a top view for explaining the substrate loading operation. [Figure 23] FIG. 10 is a top view for explaining the substrate loading operation. [Figure 24] FIG. 10 is a side view illustrating the lifting and lowering operation of the pusher pin. [Figure 25] FIG. 10 is a top view schematically showing a configuration using a pusher bar. [Figure 26] FIG. 10 is a side view illustrating the lifting and lowering operation of the pusher bar. [Figure 27]FIG. 10 is a top view schematically showing a modified example of a configuration using a pusher bar. [Figure 28] FIG. 1 is a cross-sectional view showing a simplified configuration of an organic EL display. [Figure 29] 1A to 1C are cross-sectional views showing steps in a manufacturing method of a semiconductor device according to an embodiment of the present invention. [Figure 30] 1A to 1C are cross-sectional views showing steps in a manufacturing method of a semiconductor device according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0018] The transport device according to this embodiment is used in a laser irradiation device such as a laser annealing device. The laser annealing device is, for example, an excimer laser annealing (ELA) device that forms a low temperature polysilicon (LTPS) film. The transport device, laser irradiation device, method, and manufacturing method according to this embodiment will be described below with reference to the drawings.

[0019] Embodiment 1 The basic configurations of a conveying device and a laser irradiation device according to this embodiment will be described with reference to Figures 1 and 2. Figure 1 is a top view schematically showing the basic configuration of the laser irradiation device 1. Figure 2 is a side cross-sectional view schematically showing the configuration of the laser irradiation device 1.

[0020] 1 and 2 are conceptual diagrams showing only the basic configuration of the conveying device and the laser irradiation device, and some components are omitted. For example, in Fig. 1, the conveying device 600 is shown in a simplified form. Specifically, in Fig. 1, the laser irradiation section 14, the precision levitation region 31, the semi-precision levitation region 32, the rough levitation region 33, the precision levitation unit 111, the semi-precision levitation unit 112, and the rough levitation unit 113 are omitted.

[0021] In the following figures, an xyz three-dimensional Cartesian coordinate system is shown where appropriate for ease of explanation. The z direction is the vertical direction, and the y direction is the linear direction along the linear irradiation area 15a. The x direction is a direction perpendicular to the z direction and the y direction. In other words, the y direction is the longitudinal direction of the linear irradiation area 15a, and the x direction is the lateral direction perpendicular to the longitudinal direction.

[0022] 1 and 2, the laser irradiation device 1 includes a levitation unit 10, a transport unit 11, and a laser irradiation section 14. The levitation unit 10 and the transport unit 11 configure a transport device 600.

[0023] As shown in FIG. 2, the levitation unit 10 is configured to eject gas from the surface of the levitation unit 10. The levitation unit 10 levitates the substrate 100 with its upper surface. The gas ejected from the surface of the levitation unit 10 is blown onto the underside of the substrate 100, causing the substrate 100 to levitate. For example, the substrate 100 is a glass substrate. When the substrate 100 is transported, the levitation unit 10 adjusts the amount of levitation so that the substrate 100 does not come into contact with other mechanisms (not shown) arranged above the substrate 100.

[0024] The levitation unit 10 is mainly divided into a precision levitation region 31, a semi-precision levitation region 32, and a rough levitation region 33. The precision levitation region 31 is a region that includes the irradiation region 15a of the laser light 15. That is, in the xy plane view, the precision levitation region 31 is a region that overlaps with the focus of the laser light (irradiation region 15a). The precision levitation region 31 is larger than the irradiation region 15a.

[0025] The semi-precision levitation region 32 is an area adjacent to the precision levitation region 31. In the x direction, the semi-precision levitation region 32 is disposed on both sides of the precision levitation region 31. The semi-precision levitation region 32 is larger than the precision levitation region 31.

[0026] The rough floating region 33 is a region adjacent to the semi-precision floating region 32. In other words, the semi-precision floating region 32 is disposed between the rough floating region 33 and the precision floating region 31. In the X direction, the rough floating region 33 is disposed on both sides of the precision floating region 31. In other words, the rough floating region 33 is disposed separately on the +x side and the −x side of the semi-precision floating region 32. In the xy plane view, the semi-precision floating region 32 and the rough floating region 33 are regions that do not overlap with the focus of the laser light (irradiation region 15a).

[0027] The precision levitation unit 111, the semi-precise levitation unit 112, and the rough levitation unit 113 each spray gas (e.g., air) upward. The gas sprayed from the precision levitation unit 111, the semi-precise levitation unit 112, and the rough levitation unit 113 may be an inert gas such as nitrogen. The substrate 100 is levitated by the gas being sprayed onto the underside of the substrate 100. This puts the levitation unit 111 and the substrate 100 in a non-contact state. Furthermore, the precision levitation unit 111 and the semi-precise levitation unit 112 suck in gas present between the substrate 100 and the levitation unit 10. The rough levitation unit 113 is configured to be able to suck in gas, just like the semi-precise levitation unit 112.

[0028] For example, a gas supply source (not shown) for supplying gas is connected to precision levitation unit 111, semi-precise levitation unit 112, and rough levitation unit 113. Furthermore, a vacuum generation source (not shown) for sucking gas is connected to precision levitation unit 111, semi-precise levitation unit 112, and rough levitation unit 113. The gas supply source is a compressor, gas cylinder, or the like, and supplies compressed gas. The vacuum generation source is a vacuum pump, ejector, or the like.

[0029] Precision levitation unit 111 has a higher levitation amount accuracy than semi-precise levitation unit 112 and rough levitation unit 113. Semi-precise levitation unit 112 has a higher levitation amount accuracy than rough levitation unit 113. Laser light is irradiated onto substrate 100 in precision levitation region 31, which has the highest levitation amount accuracy. For example, semi-precise levitation unit 112 is configured to levitate substrate 100 with an accuracy between the accuracy with which precision levitation unit 111 levitates substrate 100 and the accuracy with which rough levitation unit 113 levitates substrate 100.

[0030] For example, in the irradiation area 15a and the precision levitation area 31 around it, high precision is required for the levitation amount of the substrate 100. Therefore, a precision levitation unit 111 that can control the levitation amount with high precision is used. The precision levitation unit 111 is a precision levitation unit formed of a porous body such as ceramic. As the porous body, porous alumina ceramic, porous carbon, porous SiC ceramic, or the like can be used.

[0031] The precision levitation unit 111 then ejects gas upward. The precision levitation unit 111 may also be provided with suction holes that suck in gas. The porous body has suction holes machined at predetermined intervals that reach the upper surface. The suction holes are minute holes that create a negative pressure between the substrate 100 and the precision levitation unit. The porous body then ejects gas from almost the entire surface except for the suction holes. The ejection surface that creates a positive pressure is formed on almost the entire surface except for the suction holes.

[0032] The semi-precise levitation unit 112 and the rough levitation unit 113 are made of a metal material. For example, the semi-precise levitation unit 112 and the rough levitation unit 113 are made of a metal block having a hollow portion. A plurality of nozzle holes are formed in the hollow portion and reach the upper surface of the metal block. Furthermore, the metal block may be provided with suction holes for sucking gas. Note that either the semi-precise levitation unit 112 or the rough levitation unit 113 can be omitted.

[0033] The rough levitation unit 113, the semi-precision levitation unit 112, and the precision levitation unit 111 are also collectively referred to as levitation unit cells 131. In the rough levitation region 33, a plurality of rough levitation units 113 are provided as levitation unit cells 131. In the semi-precision levitation region 32, a plurality of semi-precision levitation units 112 are provided as levitation unit cells 131. In the precision levitation region 31, a plurality of precision levitation units 111 are provided as levitation unit cells 131.

[0034] The base 120 is a metal plate made of, for example, aluminum or an aluminum alloy. The precision levitation unit 111, the semi-precise levitation unit 112, and the rough levitation unit 113 are fixed to the base 120 by, for example, bolts or the like. The top surfaces of the precision levitation unit 111, the semi-precise levitation unit 112, and the rough levitation unit 113 are substantially at the same height. That is, the top surface (levitation surface) of the levitation unit 10 is substantially flat. The surface of the base 120 may be polished or otherwise processed to have a predetermined flatness. The base 120 may also have an internal space (not shown) that serves as a flow path for ejecting or sucking gas. The levitation unit cell 131 may suck or eject gas through the internal space of the base 120.

[0035] The transport unit 11 shown in FIG. 1 transports a floating substrate 100 in a transport direction. The transport unit 11 includes a holding mechanism 12 and a moving mechanism 13. The holding mechanism 12 holds the substrate 100. For example, the holding mechanism 12 can be configured using a vacuum suction mechanism. The vacuum suction mechanism is made of a metal material such as an aluminum alloy. Alternatively, the holding mechanism 12 may be made of a resin material such as PEEK (polyether ether ketone). The upper surface of the holding mechanism 12 has suction grooves, suction holes, etc. formed thereon. The holding mechanism 12 may also be made of a porous material.

[0036] The holding mechanism 12 (vacuum suction mechanism) is connected to an exhaust port (not shown), which is connected to an ejector, a vacuum pump, etc. Therefore, a negative pressure for sucking gas acts on the holding mechanism 12, and the substrate 100 can be held by using the holding mechanism 12.

[0037] The holding mechanism 12 also includes a lifting mechanism (not shown) for performing the suction operation. The lifting mechanism includes, for example, an actuator such as an air cylinder or a motor. For example, the holding mechanism 12 suctions the substrate 100 when raised to the suction position. The holding mechanism 12 also lowers to the standby position when the suction is released.

[0038] The holding mechanism 12 holds the substrate 100 by sucking the surface (lower surface) of the substrate 100 opposite to the surface (upper surface) irradiated with the laser light 15, that is, the surface of the substrate 100 facing the levitation unit 10. In Fig. 1, the holding mechanism 12 holds the end of the substrate 100 in the +y direction.

[0039] The moving mechanism 13 provided in the transport unit 11 is connected to the holding mechanism 12. The moving mechanism 13 is configured to be able to move the holding mechanism 12 in the transport direction. The transport unit 11 (holding mechanism 12 and moving mechanism 13) is provided on the end side of the levitation unit 10 in the +y direction, and the substrate 100 is transported by the moving mechanism 13 moving in the transport direction while the holding mechanism 12 holds the substrate 100.

[0040] As shown in Fig. 1, for example, the moving mechanism 13 is configured to slide the end of the levitation unit 10 in the +y direction along the transport direction. When the moving mechanism 13 slides the end of the levitation unit 10 along the transport direction, the substrate 100 is transported along the transport direction. The transport direction is inclined from the x direction. For example, if the angle formed between the x direction and the transport direction is θ, θ is greater than 0°.

[0041] Therefore, when viewed from above, the levitation unit 10 has a trapezoidal shape with four sides. Specifically, the levitation unit 10 has two sides parallel to the y direction of the levitation unit 10, one side parallel to the x direction, and one side inclined from the x direction (also referred to as the inclined side 10e). Of course, θ may be 0°. In other words, the transport direction may be parallel to the X direction. In this case, the planar shape of the levitation unit 10 may be rectangular.

[0042] The transport speed of the substrate 100 can be controlled by controlling the movement speed of the movement mechanism 13. The movement mechanism 13 includes, for example, an actuator such as a motor, a linear guide mechanism, an air bearing, and the like (not shown).

[0043] The substrate 100 is irradiated with laser light 15. Here, an irradiation area 15a of the substrate 100 that is irradiated with the laser light 15 is linear with the y direction as its longitudinal direction. That is, the y direction is the longitudinal direction (line direction) of the irradiation area 15a, and the x direction is the lateral direction.

[0044] For example, the laser irradiation unit 14 has an excimer laser light source or the like that generates laser light. Furthermore, the laser irradiation unit 14 has an optical system that guides the laser light to the substrate 100. The laser irradiation unit 14 has a lens that focuses the laser light 15 on the substrate 100. For example, the laser irradiation unit 14 has a cylindrical lens for forming a linear irradiation area 15a. The substrate 100 is irradiated with a line-shaped laser light 15 (a line beam), specifically, with a focal point extending in the y direction. The focal point of the laser light 15 is formed on the substrate 100. Therefore, in order to suppress in-plane variations, high precision is required for the floating amount in the precision floating region 31.

[0045] The substrate 100 is, for example, a glass substrate on which an amorphous film (amorphous silicon film 101a) is formed. The amorphous film can be crystallized by irradiating the amorphous film with laser light 15 and performing an annealing process. For example, the amorphous silicon film 101a can be converted into a polycrystalline silicon film (polysilicon film 101b).

[0046] In the laser irradiation device 1, the substrate 100 is levitated using the levitation unit 10, while the lower surface of the substrate 100 is held using the transport unit 11, and the substrate 100 is transported in the transport direction. At this time, the transport unit 11 provided in the laser irradiation device 1 transports the substrate 100 while holding the substrate 100 at a position where the transport unit 11 does not overlap with the irradiation region 15a in a plan view (i.e., when viewed from the z direction). In other words, as shown in FIG. 1, when the substrate 100 is transported in the transport direction, the position where the transport unit 11 holds the substrate 100 (corresponding to the position of the holding mechanism 12) does not overlap with the irradiation region 15a.

[0047] For example, the planar shape of the substrate 100 is a quadrangle (rectangle) having four sides, and the transport unit 11 (holding mechanism 12) holds only one of the four sides of the substrate 100. The transport unit 11 (holding mechanism 12) holds the substrate 100 at a position where it is not irradiated with laser light while it is being transported.

[0048] With this configuration, the position where the transport unit 11 holds the substrate 100 (corresponding to the position of the holding mechanism 12) can be separated from the irradiation area 15a. The irradiation area 15a is approximately half of the substrate 100 on the -y side, and the transport unit 11 holds the end on the +y side. The distance between the irradiation area 15a and a location near the holding mechanism 12 where deflection becomes large can be increased. This reduces the influence of deflection of the substrate 100 caused by the holding mechanism 12 during laser irradiation.

[0049] The length of the irradiation region 15a in the y direction is approximately half the length of the substrate 100. Therefore, when the substrate 100 passes through the irradiation region 15a once, the amorphous silicon film 101a is crystallized in approximately half the region of the substrate 100. Then, after the substrate 100 is rotated 180 degrees around the z axis by a rotation mechanism (not shown), the transport unit 11 transports the substrate 100 in the −x direction. Alternatively, after transporting the rotated substrate 100 in the −x direction, the transport unit 11 may transport it again in the +x direction. Then, the substrate 100 is irradiated with laser light during transport in the −x direction or during transport in the +x direction again after the 180-degree rotation. As a result, the substrate 100 passes through the irradiation region 15a, and the amorphous silicon film 101a is crystallized in the remaining half of the region of the substrate 100. By moving the substrate 100 back and forth in this manner, the amorphous silicon film 101a is converted into the polysilicon film 101b over almost the entire surface of the substrate 100.

[0050] Furthermore, the transport direction is tilted from the x-direction, which is perpendicular to the linear irradiation area 15a. In other words, the substrate 100 is transported in a transport direction tilted from the edge of the rectangular substrate 100. By tilting the transport direction from the x-direction in a top view, substrate transport suitable for the laser irradiation process can be achieved. This allows the silicon film crystallization process to be performed appropriately, improving display quality. This configuration can, for example, prevent the occurrence of moire.

[0051] For example, assume that the substrate 100 is a glass substrate for an organic EL display device. When the display area of ​​the organic EL display device is rectangular, the edges of the display area are arranged parallel to the edges of the substrate 100. In other words, the organic EL display device has a rectangular display area with its short sides in the x and y directions. When the transport direction is parallel to the x direction, the substrate 100 is irradiated with laser light with the pixel arrangement direction and the irradiation area 15a parallel.

[0052] As shown in this embodiment, the laser irradiation process can be performed appropriately by tilting the transport direction from the x-direction. To change the laser irradiation position on the substrate 100, the moving mechanism 13 moves the holding mechanism 12 in a transport direction tilted from the x-direction perpendicular to the longitudinal direction of the linear irradiation region 15a in a top view. Therefore, the crystallization process of the silicon film can be performed appropriately. For example, the occurrence of moire can be prevented, and display quality can be improved.

[0053] (Circular transport) Next, the configuration of the conveying device 600 will be described with reference to Figure 3. Figure 3 is a top view showing the configuration of the conveying device 600. Note that the description of the same content as that explained in Figures 1 and 2 will be omitted as appropriate. Also, the conveying device 600 does not include a nozzle unit 140, pusher pins 701, and pusher bar 751, which will be described later. Note that the nozzle unit 140, pusher pins 701, and pusher bar 751 can be omitted as appropriate.

[0054] The transport device 600 has a levitation unit 10 and end levitation units 671 to 676. The levitation unit 10 levitates a substrate (not shown in FIG. 3) that is an object to be processed. When viewed from above, the levitation unit 10 is trapezoidal. The levitation unit 10 has two sides parallel to the y direction, one side parallel to the x direction, and one side inclined from the x direction (also referred to as the inclined side 10e). The angle formed by the inclined side 10e and the x direction is preferably greater than 0°. The end levitation units 671 to 676 levitate the substrate end that protrudes from the levitation unit 10.

[0055] For the sake of explanation, the levitation unit 10 is divided into six regions 60a to 60f when viewed from above. Specifically, the levitation unit 10 includes a first region 60a to a fourth region 60d, a process region 60e, and a transit region 60f. The first region 60a is a trapezoidal region including corners on the -x and +y sides (the upper left corner in FIG. 3). The second region 60b is a trapezoidal region including corners on the +x and +y sides (the upper right corner in FIG. 3). The third region 60c is a rectangular region including corners on the +x and -y sides (the lower right corner in FIG. 3). The fourth region 60d is a rectangular region including corners on the -x and -y sides (the lower left corner in FIG. 3).

[0056] The process area 60e is a trapezoidal area located between the first area 60a and the second area 60b. The process area 60e is an area including the irradiation area 15a where the laser light is irradiated. The passage area 60f is a rectangular area located between the third area 60c and the fourth area 60d.

[0057] The +y-side half of levitation unit 10 (the upper half of FIG. 3) is made up of, in order from the -x side (the left side of FIG. 3), a first region 60a, a process region 60e, and a second region 60b. The -y-side half of levitation unit 10 (the lower half of FIG. 3) is made up of, in order from the +x side, a third region 60c, a passing region 60f, and a fourth region 60d.

[0058] Furthermore, the fourth area 60d is an input area into which the substrate 100 is loaded and an output area from which the substrate 100 is unloaded. For example, a transfer machine (not shown), such as a transfer robot, is provided on the -X side of the fourth area 60d. The transfer machine loads the substrate 100 into the fourth area 60d. Similarly, the transfer machine unloads the substrate from the fourth area 60d. Pusher pins, which will be described later, may be used to load and unload the substrate 100. When a configuration that does not use pusher pins is adopted, a rotation mechanism 68 may be used to transfer the substrate 100 instead of the pusher pins.

[0059] The levitation unit 10 includes a rotation mechanism 68 and alignment mechanisms 69a and 69b. The rotation mechanism 68 rotates the substrate. The alignment mechanisms 69a and 69b align the substrate. The first region 60a and the second region 60b are provided with alignment mechanisms 69a and 69b, respectively. The rotation mechanism 68 is provided in the fourth region 60d. The operations of the rotation mechanism 68 and the alignment mechanisms 69a and 69b will be described later.

[0060] The end levitation units 671 to 676 are arranged outside the levitation unit 10. The end levitation units 671 to 676 are arranged along the outer periphery of the trapezoidal shaped levitation unit 10. The end levitation units 671 to 676 are provided along the end sides of the levitation unit 10. In a top view, the end levitation units 671 to 676 are arranged to surround the outer periphery of the levitation unit 10.

[0061] End levitation units 671 and 672 are arranged on the -x side of levitation unit 10. End levitation unit 673 is arranged on the +y side of levitation unit 10. End levitation unit 674 is arranged on the +x side of levitation unit 10. End levitation units 675 and 676 are arranged on the -y side of levitation unit 10.

[0062] End floating units 671 and 672 are arranged along the edge on the -x side of floating unit 10. That is, end floating units 671 and 672 are each provided along the y direction. Furthermore, the width of end floating unit 671 in the x direction is wider than that of end floating unit 672. End floating unit 671 is arranged on the -y side of end floating unit 672.

[0063] End levitation units 673 are arranged along the edge on the +y side of levitation unit 10. In other words, end levitation units 673 are provided along inclined side 10e of levitation unit 10. End levitation units 674 are arranged along the edge on the +x side of levitation unit 10. In other words, end levitation units 674 are each provided along the y direction.

[0064] End levitation units 675, 676 are arranged along the edge on the -y side of levitation unit 10. In other words, end levitation units 675, 676 are each provided along the x direction. Furthermore, the width of end levitation unit 676 in the y direction is wider than end levitation unit 675. End levitation unit 676 is arranged on the -x side of end levitation unit 675.

[0065] A transport unit 11a is provided between the floating unit 10 and the end floating unit 671. A transport unit 11a is also disposed between the floating unit 10 and the end floating unit 672. The transport unit 11a is formed along the y direction. The transport unit 11a transports the substrate in the +y direction. That is, the transport unit 11a transports the substrate 100 from the fourth region 60d toward the first region 60a.

[0066] A transport unit 11b is provided between the floating unit 10 and the end floating unit 673. The transport unit 11b is formed along the inclined side 10e. The transport unit 11b transports the substrate in a direction parallel to the inclined side 10e. In other words, the transport unit 11b transports the substrate 100 from the first region 60a toward the second region 60b.

[0067] A transport unit 11c is provided between the floating unit 10 and the end floating unit 674. The transport unit 11c is formed along the y direction. The transport unit 11c transports the substrate 100 in the -y direction. That is, the transport unit 11c transports the substrate 100 from the second region 60b toward the third region 60c.

[0068] Transport unit 11d is provided between floating unit 10 and end portion floating unit 675. Transport unit 11d is also arranged between floating unit 10 and end portion floating unit 676. Transport unit 11d is formed along the x direction. Transport unit 11a transports the substrate in the -x direction. That is, transport unit 11d transports the substrate from the third region 60c to the fourth region 60d.

[0069] The transport units 11a to 11d each include the holding mechanism 12 and the moving mechanism 13 shown in Fig. 1. The operations of the holding mechanism 12 and the moving mechanism 13 will be described later.

[0070] The laser beam irradiation area 15a has a longitudinal direction in the y direction. That is, a linear irradiation area 15a is formed with the longitudinal direction in the y direction. The laser beam is irradiated onto the substrate 100 while the substrate 100 is transported in a direction parallel to the inclined side 10e. The laser irradiation process is performed while the substrate is moving from the first area 60a to the second area 60b. In this embodiment, too, the amorphous silicon film is converted into a polysilicon film by irradiating the substrate with laser beam from the laser light source.

[0071] In the levitation unit 10, a precision levitation unit 111 is disposed in and around the irradiation region 15a. The precision levitation unit 111 has a higher levitation amount precision than the semi-precision levitation units and rough levitation units in other regions. Therefore, in the process region 60e including the irradiation region 15a, the laser light is irradiated onto the levitated substrate 100 with a more precise levitation amount than in the other regions 60a to 60d, 60f. This allows the laser light to be irradiated onto the substrate 100 stably. Furthermore, regions other than the irradiation region 15a, such as the passage region 60f, the third region 60c, and the fourth region 60d, are formed without using the expensive precision levitation unit 111. This reduces the cost of the device.

[0072] Next, the procedure of the transport method using the levitation unit 10 will be described with reference to FIGS. 4 to 11. Here, the fourth region 60d is the loading and unloading position for the substrate 100. The substrate 100 loaded into the fourth region 60d is then transported through the first region 60a, the process region 60e, the second region 60b, the third region 60c, the passing region 60f, and the fourth region 60d in that order. That is, the substrate 100 circles along the edge of the levitation unit 10. Here, the substrate 100 makes two revolutions to irradiate the entire substrate 100 with the laser light. That is, the substrate 100 is transported so as to circulate twice over the levitation unit 10. In this manner, the laser light is irradiated onto almost the entire surface of the substrate 100.

[0073] The transport method will be described in detail below, following the steps. As shown in Fig. 4, the substrate 100 is carried into the fourth region 60d. The substrate 100 carried into the fourth region 60d is floated by the float unit 10 and the edge float units 671, 672, and 676. That is, the edge on the -x side of the substrate 100 is floated by the edge float units 671 and 672, and the center is floated by the float unit 10. The edge on the -y side of the substrate 100 is floated by the edge float unit 676. Then, the holding mechanism 12a of the transport unit 11a holds the substrate 100.

[0074] Next, as shown in Figure 5, substrate 100a in fourth region 60d is transported to first region 60a. In Figure 5, the substrate moved to first region 60a is shown as substrate 100b. Holding mechanism 12a of transport unit 11a holds substrate 100a. Then, movement mechanism 13a moves holding mechanism 12a in the +y direction, thereby moving substrate 100a from fourth region 60d to first region 60a (white arrow in Figure 5).

[0075] Here, in the xy-plane view, the holding mechanism 12a moves in the +y-direction, passing between the levitation unit 10 and the end levitation unit 671. Furthermore, in the xy-plane view, the holding mechanism 12a moves in the +y-direction, passing between the levitation unit 10 and the end levitation unit 672. Therefore, the substrate 100b is levitated by the levitation unit 10 and the end levitation units 672 and 673. That is, the end on the -x side of the substrate 100b is levitated by the end levitation unit 672, and the central portion is levitated by the levitation unit 10. The end on the +y side of the substrate 100b is levitated by the end levitation unit 673.

[0076] Next, as shown in FIG. 6, the alignment mechanism 69a aligns the position and angle of the substrate 100b transported to the first region 60a. For example, the position and rotation angle of the substrate may be slightly shifted due to the loading, transporting, and rotating operations of the substrate 100. The alignment mechanism 69a corrects the shift in position and rotation angle. This allows the irradiation position of the laser light on the substrate 100 to be controlled with high precision.

[0077] For example, the alignment mechanism 69a is movable in the y-direction and rotatable around the z-axis. Furthermore, the alignment mechanism 69a is movable in the z-direction. For example, the alignment mechanism 69a includes an actuator such as a motor. The amount of positional deviation and angle deviation are obtained from an image of the substrate 100b captured by a camera or the like. The alignment mechanism 69a performs alignment based on the amount of deviation.

[0078] An alignment mechanism 69a is disposed directly below the center of the substrate 100b. The alignment mechanism 69a holds the substrate 100b. The alignment mechanism 69a may hold the substrate 100b by suction, similar to the holding mechanism 12. The holding mechanism 12a releases its hold on the substrate 100b. As a result, the substrate 100b is transferred from the holding mechanism 12a to the alignment mechanism 69a.

[0079] Then, the alignment mechanism 69a rotates the substrate 100b around the z-axis (shown by the white arrow in FIG. 6). The alignment mechanism 69a rotates the substrate 100b so that the edge of the substrate 100b is parallel to the inclined side 10e of the levitation unit 10. The rotated substrate is shown as substrate 100c. For example, the alignment mechanism 69a rotates the substrate 100b by a predetermined angle around the z-axis. The edge of the substrate 100c is now parallel to the inclined side 10e of the levitation unit 10. After the alignment is complete, the holding mechanism 12b of the transport unit 11b holds the substrate 100b, and the alignment mechanism 69a releases its hold. This transfers the substrate 100c from the alignment mechanism 69a to the holding mechanism 12b of the transport unit 11b.

[0080] Next, as shown in FIG. 7, the transport unit 11b moves the substrate 100d. As a result, the substrate 100d passes through the process area 60e. Here, in the xy plan view, the holding mechanism 12b passes between the floating unit 10 and the end floating unit 673 and moves in a direction parallel to the inclined side 10e. As a result, approximately half of the area of ​​the substrate 100d passes through the irradiation area 15a. The laser light is irradiated onto the substrate 100d, which is moving in an inclined direction inclined from the x direction orthogonal to the irradiation area 15a.

[0081] In the xy plane view, the holding mechanism 12b passes between the levitation unit 10 and the end levitation unit 673 and moves in a direction parallel to the inclined side 10e. Therefore, the substrate 100d is levitated by the levitation unit 10 and the end levitation unit 673. That is, the end on the +y side of the substrate 100d is levitated by the end levitation unit 673, and the center is levitated by the levitation unit 10. A laser irradiation process is carried out while the substrate 100d moves from the first region 60a to the second region 60b.

[0082] Next, as shown in Fig. 8, when substrate 100e moves to second region 60b, alignment mechanism 69b aligns substrate 100e. Here, alignment mechanism 69b rotates substrate 100e (white arrow in Fig. 8). In Fig. 8, the rotated substrate is shown as substrate 100f.

[0083] An alignment mechanism 69b is disposed directly below the center of the substrate 100e. The alignment mechanism 69b holds the substrate 100e. The alignment mechanism 69b may hold the substrate 100e by suction, similar to the holding mechanism 12. Furthermore, the holding mechanism 12b releases its hold on the substrate 100e. The substrate 100e is transferred from the holding mechanism 12b of the transfer unit 11b to the alignment mechanism 69b.

[0084] The alignment mechanism 69b rotates the substrate 100e around the z-axis (shown by the hollow arrow in FIG. 8). The alignment mechanism 69b rotates the substrate 100e so that the edge of the substrate 100e is parallel to the inclined edge 10e of the floating unit 10. After the rotation, the edge of the substrate 100f is parallel to the x-direction or the y-direction. Then, once the alignment is complete, the holding mechanism 12c of the transport unit 11c holds the substrate 100f, and the alignment mechanism 69b releases its hold. This allows the substrate 100f to be transferred from the alignment mechanism 69b to the holding mechanism 12c of the transport unit 11c.

[0085] Substrate 100e is levitated by levitation unit 10 and edge levitation units 673 and 674. That is, the +y side edge of substrate 100e is levitated by edge levitation unit 673. The +x side edge of substrate 100e is levitated by edge levitation unit 674, and the center is levitated by levitation unit 10.

[0086] Next, as shown in Figure 9, substrate 100f in second region 60b is transported to third region 60c. The substrate moved to third region 60c is shown as substrate 100g. In Figure 9, holding mechanism 12c of transport unit 11c holds substrate 100f. Then, movement mechanism 13c moves holding mechanism 12c in the -y direction, thereby moving substrate 100f from second region 60b to third region 60c (white arrow in Figure 9).

[0087] Here, in the xy plane view, the holding mechanism 12c moves in the -y direction, passing between the levitation unit 10 and the end levitation unit 674. Therefore, the substrate 100e is levitated by the levitation unit 10 and the end levitation units 674 and 675. The end on the +x side of the substrate 100e is levitated by the end levitation unit 674, and the central portion is levitated by the levitation unit 10. The end on the -y side of the substrate 100e is levitated by the end levitation unit 675.

[0088] Then, the holding mechanism 12d of the transport unit 11d holds the substrate 100g, and the holding mechanism 12c releases its hold, thereby transferring the substrate 100g from the holding mechanism 12c of the transport unit 11c to the holding mechanism 12d of the transport unit 11d.

[0089] Next, as shown in Figure 10, substrate 100g in the third region 60c is transported to the fourth region 60d. The substrate that has moved to the fourth region 60d is shown as substrate 100h. In Figure 10, holding mechanism 12d of transport unit 11d holds substrate 100g. Then, movement mechanism 13d moves holding mechanism 12d in the -x direction, causing substrate 100f to move from the third region 60c to the fourth region 60d (white arrow in Figure 10).

[0090] Here, in the xy-plane view, the holding mechanism 12d moves in the -x direction, passing between the levitation unit 10 and the edge levitation unit 675. In the xy-plane view, the holding mechanism 12d moves in the -x direction, passing between the levitation unit 10 and the edge levitation unit 676. Therefore, the substrate 100h is levitated by the levitation unit 10 and the edge levitation unit 676. The edge on the -y side of the substrate 100h is levitated by the edge levitation unit 676, and the central portion is levitated by the levitation unit 10. The edge on the -x side of the substrate 100h is levitated by the edge levitation unit 671.

[0091] In this way, the substrate 100 that was in the fourth region 60d moves in the order of the first region 60a, the process region 60e, the second region 60b, the third region 60c, the passing region 60f, and the fourth region 60d. In other words, the substrate 100 circles along the edge of the levitation unit 10.

[0092] 11, the rotation mechanism 68 rotates the substrate 100h by 180° around the z-axis. That is, the substrate 100h is transferred from the holding mechanism 12d to the rotation mechanism 68. After the rotation mechanism 68 rotates the substrate 100h, the substrate 100h is transferred from the rotation mechanism 68 to the holding mechanism 12d.

[0093] As in the above, the transport units 11a to 11d again move the substrate 100h through the first region 60a, the process region 60e, the second region 60b, the third region 60c, the passing region 60f, and the fourth region 60d in that order. That is, as shown in Figures 4 to 11, the substrate 100 circles along the edge of the levitation unit 10.

[0094] Here, the rotation mechanism 68 rotates the substrate 100h by 180°. When the substrate 100e passes through the process region 60e for the second time, the remaining half of the region that was not irradiated with laser light during the first pass is irradiated with laser light. In this manner, the substrate 100 circulates twice along the edge of the floating unit 10. Because the substrate 100 rotates 180° between the first and second laser irradiations, the laser light is irradiated onto almost the entire surface of the substrate 100. Note that the position at which the substrate 100 is rotated is not limited to the first region 60a. For example, the rotation may be performed in the second region 60b, the third region 60c, the fourth region 60d, or the like.

[0095] In this embodiment, too, the moving mechanism 13b transports the holding mechanism 12b in a direction tilted from the x direction orthogonal to the irradiation area 15a. This allows the crystallization process of the silicon film to be carried out appropriately. For example, it is possible to prevent the occurrence of moire and improve display quality. Of course, the transport direction of the substrate 100 may be the X direction. In top view, the transport direction of the substrate 100 may be any direction tilted from the Y direction. In other words, the transport direction of the substrate may be parallel to the X direction or tilted from the X direction.

[0096] (Nozzle unit)

[0097] The transport device 600 may be provided with a nozzle unit. The nozzle unit provided in the transport device 600 will be described below. FIG. 12 is a side cross-sectional view that schematically shows the configuration of the levitation unit 10. In FIG. 12, configurations other than the levitation unit 10 and its surroundings are omitted. The levitation unit 10 includes a base 120, a levitation unit cell 131, and a nozzle unit 140.

[0098] The levitation unit 10 includes a plurality of levitation unit cells 131. As described above, the levitation unit cells 131 are precision levitation units 111, semi-precise levitation units 112, or rough levitation units 113. The plurality of levitation unit cells 131 are fixed to the base 120. Although FIG. 2 is a simplified diagram and only shows two levitation unit cells 131, a large number of levitation unit cells 131 are arranged throughout the levitation unit 10 along the X and Y directions.

[0099] One levitation unit cell 131 is formed as one porous block or metal block. When viewed from above, the levitation unit cell 131 is formed, for example, in a rectangular or trapezoidal shape. The levitation unit cells 131 are arranged, for example, along the X direction or the Y direction. The upper surface of the levitation unit cell 131 is the gas ejection surface.

[0100] The plurality of levitation unit cells 131 are fixed on a pedestal 120. The pedestal 120 is made of a metal material such as an aluminum alloy. The levitation unit cells 131 are attached to the upper surface of the pedestal 120 with bolts or the like. In order to control the levitation amount of the substrate 100 with high precision, it is preferable to increase the flatness of the upper surface of the pedestal 120. This can be achieved by polishing the upper surface of the pedestal 120. This makes it possible to make the height of the upper surfaces of the plurality of levitation unit cells 131 uniform.

[0101] A nozzle unit 140 is provided in a gap 132 between two adjacent levitation unit cells 131. That is, a gap 132 wider than the nozzle unit 140 is provided between two adjacent levitation unit cells 131. The nozzle unit 140 is disposed in the gap 132. The gap 132 is, for example, a groove having a predetermined width. The nozzle unit 140 is disposed along the gap 132. The nozzle unit 140 is disposed below the substrate 100, and ejects compressed gas toward the lower surface of the substrate 100. The nozzle unit 140 ejects gas at a higher ejection speed than the levitation unit cells 131.

[0102] By providing the nozzle unit 140 to the levitation unit 10, it is possible to prevent the edge of the substrate 100 from contacting the levitation unit cell 131. For example, the nozzle unit 140 is disposed directly below the location where the edge or corner of the substrate 100 passes. In this way, even if the edge or corner of the substrate 100 sags, it is possible to prevent the edge of the substrate 100 from contacting the levitation unit 10. Therefore, the substrate 100 can be transported appropriately.

[0103] The configuration of the nozzle unit 140 will be described using Figure 13. Figure 13 shows a top view, a side view, and a front view of the nozzle unit 140. The nozzle unit 140 includes a main body 141, a jetting part 142, and a connecting part 145.

[0104] A jetting part 142 is provided on the upper surface of the main body part 141. A connecting part 145 is provided on the side of the main body part 141. The main body part 141 is fixed to the base 120 with screws, bolts, etc. The connecting part 145 has a joint, and a gas pipe or the like is connected to the connecting part 145. The jetting part 142 has a jetting port that jets gas upward. The jetting part 142 has a nozzle arranged facing upward. This makes it possible to increase the upward gas jetting speed. Furthermore, the gas jetting speed of the nozzle unit 140 may be higher than the gas jetting speed of the levitation unit cell 131. Drooping of the substrate 100 during levitation can be prevented, and contact of the substrate 100 with the levitation unit 10 can be prevented.

[0105] The main body 141 is a hollow block and has an internal space 146. The ejection part 142 and the connection part 145 are connected via the internal space 146 of the main body 141. Compressed gas such as dry air or dry nitrogen is supplied from a gas pipe connected to the connection part 145. The gas passes through the internal space 146 of the main body 141 and is ejected upward from the ejection part 142. The gas can be ejected toward the underside of the substrate 100. This prevents the substrate 100 from sagging during levitation and prevents the substrate 100 from coming into contact with the levitation unit 10.

[0106] 14, the main body 141 may be a manifold having a plurality of ejection parts 142. In FIG. 14, four ejection parts 142 are provided on the upper surface of the main body 141. Each of the ejection parts 142 has a nozzle that ejects gas upward. Therefore, gas is ejected upward from four locations. In this way, sagging of the moving substrate 100 can be more effectively prevented.

[0107] 14, two connection portions 145 are provided on the main body portion 141. The two connection portions 145 are provided on opposing side surfaces of the main body portion 141. By providing a plurality of connection portions 145, two nozzle units 140 can be connected in series. That is, two nozzle units 140 as shown in FIG. 14 are arranged side by side with their respective connection portions 145 facing each other. The connection portion 145 of one nozzle unit 140 is connected to the connection portion 145 of the other nozzle unit 140 by a gas pipe. This allows gas to flow from one nozzle unit 140 to the other nozzle unit 140. In this way, a plurality of nozzle units 140 can be connected in series. Therefore, the nozzle unit 140 can be arranged at any position on the floating unit 10.

[0108] The transfer method using the transfer device having the nozzle unit 140 described above includes the following steps C1 and C2. (Step C1) A step in which the moving mechanism moves the holding mechanism to transport the substrate in a transport direction. (Step C2) A step in which the nozzle unit ejects gas onto the edge of the substrate during transportation.

[0109] The nozzle unit 140 can be arranged locally in the floating unit 10. In other words, the nozzle unit 140 only needs to be provided at a location where an edge or corner of the substrate 100 passes. Furthermore, the nozzle unit 140 may be arranged at a location where the gap 132 becomes wider. An example of the arrangement of the nozzle unit 140 will be described later.

[0110] The ejection of gas from the nozzle unit 140 may be controlled according to the transport position of the substrate 100. The supply of gas to the nozzle unit 140 may be linked to the transport of the substrate 100. The nozzle unit 140 may eject gas when an edge or corner of the substrate 100 is directly above the nozzle unit 140. Therefore, when an edge or corner of the substrate 100 is not directly above the nozzle unit 140, the nozzle unit 140 may eject gas or may stop ejecting gas. For example, the ejection of gas can be controlled by controlling the on / off of a valve. This makes it possible to prevent gas accumulation, thereby enabling the substrate 100 to be transported appropriately.

[0111] For example, gas is supplied to the nozzle unit 140 while the substrate 100 passes directly above the nozzle unit 140. Specifically, the nozzle unit 140 ejects gas at the timing when or just before an edge or corner of the substrate 100 passes directly above the nozzle unit 140. In other words, the supply of gas to the nozzle unit 140 may be stopped while the substrate 100 is not directly above the nozzle unit 140. In this way, the nozzle unit 140 stops ejecting gas depending on the transport position of the substrate 100. For example, while gas is being ejected from some nozzle units 140, ejection of gas from other nozzle units 140 stops.

[0112] (Nozzle unit arrangement example 1) Fig. 15 is a diagram illustrating an example of the arrangement of nozzle unit 140. Specifically, Fig. 15 is a top view showing the configuration of fourth region 60d of levitation unit 10 and its surrounding area. Thus, end levitation unit 671 is provided on the -X side of levitation unit 10, and end levitation unit 676 is provided on the -Y side.

[0113] A plurality of levitation unit cells 131 are provided in the fourth region 60d. The end levitation unit 671 has a plurality of levitation unit cells 131. Similarly, the end levitation unit 676 has a plurality of levitation unit cells 131. In top view, the levitation unit cells 131 are formed in a rectangular shape along the X direction and the Y direction. Therefore, the gap 132 is formed along the X direction or the Y direction.

[0114] Furthermore, in the fourth region 60d, the orientations of the levitation unit cells 131 are different. That is, the fourth region 60d is provided with levitation unit cells 131 whose longitudinal direction is the X direction and levitation unit cells 131 whose longitudinal direction is the Y direction. In the fourth region 60d, the rectangular levitation unit cell 131 whose longitudinal direction is the X direction is shown as levitation unit cell 131a, and the rectangular levitation unit cell 131 whose longitudinal direction is the Y direction is shown as levitation unit cell 131b.

[0115] Here, the nozzle unit 140 is provided at a position A where the levitation unit cell 131a and the levitation unit cell 131b are adjacent to each other. At the position A where the levitation unit cell 131a and the levitation unit cell 131b are adjacent to each other, the orientation of the levitation unit cell 131 is different. Therefore, at the position A, the direction of the substrate levitation behavior changes by 90 degrees. When the substrate 100 is transported in the +Y direction from the fourth region 60d, the corners and edges of the substrate 100 pass through the position A. When the corners and edges of the substrate 100 pass through the position A, the amount of levitation tends to decrease. Therefore, the nozzle unit 140 is provided at the position A. This makes it possible to prevent the edges of the substrate 100 from drooping when transported in the +Y direction.

[0116] (Nozzle unit 140 arrangement example 2) As shown in FIG. 15, a rotation mechanism 68 may be provided in the fourth region 60d. The rotation mechanism 68 rotates the substrate 100 around a rotation axis parallel to the Z axis. FIG. 15 shows a locus B along which a corner of the substrate 100 passes as a result of the rotation of the rotation mechanism 68. The locus B is a circle centered on the rotation axis of the rotation mechanism 68. The nozzle unit 140 is then disposed on the locus B. Therefore, the nozzle unit 140 is disposed directly below the locus B along which the corner of the substrate 100 passes when the substrate 100 is rotated. This makes it possible to prevent the end of the substrate 100 from drooping when the substrate 100 is rotated.

[0117] When the substrate 100 is rotated, a gas film is less likely to form between the substrate 100 and the levitation unit 10 compared to when the substrate 100 is moved linearly. The amount of levitation of the substrate 100 tends to decrease, particularly at corners and their vicinity. The nozzle units 140 are disposed in the gaps 132 through which the corners of the substrate 100 pass when the substrate 100 is rotated. It is preferable to dispose the nozzle units 140 in all or almost all of the gaps 132 immediately below the trajectory B of the corners. It is not necessary, of course, for the nozzle units 140 to be disposed in all of the gaps 132 immediately below the trajectory B. For example, the nozzle units 140 may not be disposed in the gaps 132 immediately below the trajectory B at positions that interfere with the transport unit 11. It is preferable to dispose the nozzle units 140 so that gas is sprayed onto the corners of the substrate 100 and their vicinity.

[0118] (Nozzle unit arrangement example 3) Arrangement example 3 of nozzle unit 140 will be described with reference to Fig. 16. Fig. 16 is a diagram for explaining arrangement example 3 of nozzle unit 140. Specifically, Fig. 16 is a top view showing the configuration of first region 60a of levitation unit 10 and its surrounding area. An end levitation unit 673 is provided on the +Y side of levitation unit 10. In Fig. 16, nozzle unit 140 is provided at location C.

[0119] In the first region 60a, the levitation unit cell 131 provided at the end on the +Y side is referred to as levitation unit cell 131c. The levitation unit cell 131c is trapezoidal with one side parallel to the transport direction. The levitation unit cell 131 of the end levitation unit 673 is referred to as levitation unit cell 131d.

[0120] A gap 132c is provided between the levitation unit cell 131c and the levitation unit cell 131d. The gap 132c is parallel to the transport direction. In other words, the gap 132c is oriented in a direction different from the X and Y directions. The gap 132c is parallel to the inclined side 10e. The transport unit 11b moves through the gap 132c. A nozzle unit 140 is provided in the gap 132c. The nozzle unit 140 is positioned so as not to interfere with the movement of the transport unit 11b.

[0121] When the substrate 100 is transported from the fourth region 60d to the first region 60a, the transport unit 11a moves the substrate 100 in the Y direction (see FIG. 5). The edge of the substrate 100 passes through the gap 132c and reaches directly above the floating unit cell 131d. By disposing the nozzle unit 140 in the gap 132c, it is possible to prevent the edge of the substrate 100 from drooping during transport in the +Y direction.

[0122] The location of the nozzle unit 140 is not limited to the above-mentioned arrangement examples 1 to 3, and it can be arranged in other locations. For example, if there is a location where the gap 132 becomes wider due to the arrangement of the floating unit cells, the nozzle unit 140 can be arranged in that location. Furthermore, the nozzle unit 140 does not have to be arranged in one or more of the arrangement examples 1 to 3. Furthermore, the nozzle unit 140 can be omitted.

[0123] (End floating unit) Next, an example of the configuration of the end portion floating unit will be described with reference to Fig. 17. Fig. 17 is a diagram schematically showing the difference in height between end portion floating unit 671 and floating unit 10.

[0124] The edges of the substrate 100 tend to sag, and are therefore lower than the center of the substrate 100. For this reason, in FIG. 17 , the upper surfaces of the levitation unit cells 131 of the edge levitation unit 671 are made lower than the upper surfaces of the levitation unit cells 131 of the levitation unit 10. In other words, the levitation unit cells 131 directly below the edges of the substrate 100 are arranged lower than the levitation unit cells 131 directly below the center of the substrate 100. For example, the levitation unit cells 131 of the edge levitation unit 671 are arranged lower than the levitation unit cells 131 of the levitation unit 10. In other words, a slight step is provided between the upper surface (ejection surface) of the levitation unit 10 and the upper surface (ejection surface) of the edge levitation unit 671.

[0125] This prevents the substrate 100 from coming into contact with the end floating unit 671 even if the end of the substrate 100 sags. Note that, although only the end floating unit 671 is shown in Fig. 17, the floating unit cells 131 may be lowered in the same manner in the other end floating units 672 to 676. Furthermore, the floating unit cells 131 may not be lowered in at least one or all of the end floating units 671 to 676.

[0126] Furthermore, as shown in FIG. 18, the levitation unit cell 131 of the end levitation unit 671 can be disposed at an angle. For example, a height adjustment mechanism 1311 is disposed between the base 120 and the levitation unit cell 131. The height adjustment mechanism 1311 has, for example, a wedge shape and is inserted between the base 120 and the levitation unit cell 131 from the outside. As a result, the upper surface (levitation surface) of the levitation unit cell 131 of the end levitation unit 671 becomes an inclined surface that becomes higher toward the outside. The height adjustment mechanism 1311 may also have a leveling bolt or the like for adjusting the height. The height of the outside of the levitation unit cell 131 changes by rotating a height adjustment screw provided on the height adjustment mechanism 1311. In this way, the inclination angle of the levitation surface can be adjusted.

[0127] By doing so, the levitation unit cell 131 ejects gas obliquely upward. That is, the gas from the levitation unit cell 131 is ejected upward toward the center of the substrate. The upper surface of the levitation unit cell 131 of the end levitation unit 671 is a plane inclined from the XY plane. Then, gas is ejected in a direction perpendicular to the upper surface of the levitation unit cell 131.

[0128] (Base 120) The substrate 100 is levitated by gas ejected from the levitation unit 10. For this reason, when the size of the substrate 100 increases, gas may accumulate between the substrate 100 and the levitation unit 10. For example, if the rough levitation region 33 is sufficiently large relative to the substrate 100 and the levitation unit cells 131 are arranged on the base 120 without any gaps, a large amount of gas will accumulate in the air gap between the substrate 100 and the levitation unit 10. In such a case, there is a risk of a dome phenomenon occurring, in which the levitation amount near the center of the substrate 100 increases and the levitation amount at the edges decreases significantly.

[0129] In such a case, it is preferable to provide a through hole (relief hole) in base 120 to allow the gas to escape. An example of the configuration of base 120 will be described below with reference to Figs. 19 and 20. Fig. 19 is a top view schematically showing the configuration of levitation unit 10. Fig. 20 is a side view schematically showing the configuration of levitation unit 10. Note that Figs. 19 and 20 show a partial configuration of levitation unit 10, and the configuration has been appropriately simplified.

[0130] The base 120 is provided with a relief hole 122. Specifically, the relief hole 122 is a through-hole that penetrates the base 120 in the Z direction. The relief hole 122 is provided so as to reach the gap 132. Therefore, the relief hole 122 is exposed on the upper surface of the base 120.

[0131] 19, a plurality of rough levitation units 113 are arranged at predetermined intervals in the X and Y directions. The rough levitation units 113 are arranged in a two-dimensional array. Gaps 132 provided between the rough levitation units 113 are parallel to the X and Y directions. In other words, the gaps 132 are formed in a lattice pattern along the X and Y directions.

[0132] A plurality of escape holes 122 are formed in the gap 132. The escape holes 122 are arranged in an array along the X and Y directions. This allows gas between the substrate 100 and the levitation unit 10 to escape to the underside of the base 120 through the escape holes 122. This makes it possible to suppress the dome phenomenon and transport the substrate 100 with an appropriate levitation amount.

[0133] (Transfer operation of the substrate 100) Next, the mechanism for transferring the substrate 100 to the floating unit 10 and its operation will be described with reference to Figures 21 to 24. Figures 21 to 24 are schematic views for explaining the operation of carrying the substrate 100 into the fourth area 60d. Figures 21 to 23 are top views schematically showing the fourth area 60d and the transfer machine 900. Figure 24 is a side view schematically showing the lifting and lowering operation of the pusher pins 701.

[0134] As shown in FIG. 21 , a transfer machine 900 is provided on the −X side of the fourth area 60d. The transfer machine 900 includes, for example, a hand 901 and an arm mechanism 902. The hand 901 holds the substrate 100. That is, the substrate 100 is placed on the hand 901. The arm mechanism 902 moves the hand 901. The arm mechanism 902 extends and retracts, for example, in the X direction. The arm mechanism 902 transfers the hand 901 in the X direction. That is, the X direction is the transfer direction. The −X direction is also referred to as the transfer machine side. The transfer machine 900 is a loader that transfers the substrate 100 to the fourth area 60d. The transfer machine 900 may also be an unloader that transfers the substrate 100 from the fourth area 60d.

[0135] A plurality of pusher pins 701 are provided in the fourth region 60d so as to be movable up and down. The pusher pins 701 are lift pins that move up and down. The pusher pins 701 move up and down to receive the substrate 100 from the hand 901. The pusher pins 701 are arranged at predetermined intervals in the X and Y directions. The pusher pins 701 are scattered in the gas ejection region 710. For example, the pusher pins 701 penetrate the levitation unit 10 from top to bottom (see FIG. 24). That is, the levitation unit 10 has a through-hole for accommodating the pusher pins 701. Alternatively, the pusher pins 701 may be arranged in the gap 132 between two adjacent levitation unit cells 131. Note that, although the pusher pins 701 have a circular shape when viewed from above, the planar shape of the pusher pins 701 is not limited to a circular shape.

[0136] A rotation mechanism 68 is provided between the multiple pusher pins 701. In other words, the multiple pusher pins 701 are arranged so as not to interfere with the rotation mechanism 68. Therefore, in the vicinity of the rotation mechanism 68, the pusher pins 701 are not spaced equally apart to avoid the rotation mechanism 68. Similarly, the multiple pusher pins 701 are arranged so that a hand 901 does not interfere with them (see FIG. 22). For example, the hand 901 has a comb shape with multiple claws so as not to come into contact with the multiple pusher pins 701.

[0137] 24, multiple pusher pins 701 move up and down in unison. For example, the pusher pins 701 are rod-shaped members extending in the Z direction, and their lower ends are connected to an elevation base 702. The multiple pusher pins 701 are fixed to one elevation base 702. In other words, the elevation base 702 supports the multiple pusher pins 701.

[0138] The lifting mechanism 703 has an actuator such as a motor or a cylinder, and extends and retracts up and down. The lifting mechanism 703 raises and lowers the lifting base 702. The lifting mechanism 703 and the lifting base 702 are arranged below the levitation unit 10. In FIG. 24, the height at which the pusher pins 701 receive the substrate 100 is shown as the raised position. The height at which the pusher pins 701 descend and become lower than the upper surface of the levitation unit 10 is shown as the lowered position. At the lowered position, the substrate 100 is levitated above the levitation unit 10. The height of the substrate 100 at the lowered position is the levitation height.

[0139] Fig. 21 shows the state before transfer, that is, the state in which the hand 901 holds the substrate 100. In Fig. 21, the substrate 100 and the hand 901 are in a standby position outside the floating unit 10. At this time, the pusher pins 701 are in a lowered position.

[0140] When the arm mechanism 902 moves the hand 901 in the +X direction from the standby position shown in Fig. 21, the hand 901 and the substrate 100 move to the carry-in position as shown in Fig. 22. In Fig. 22, the substrate 100 has moved directly above the fourth area 60d. In other words, Fig. 22 shows a state in which the hand 901 and the substrate 100 have moved to the carry-in position above the fourth area 60d.

[0141] In the state shown in FIG. 22, the lifting mechanism 703 lifts the lifting base 702 and the pusher pins 701 to the raised position (see FIG. 24). This brings the substrate 100 into contact with the tips of the pusher pins 701. The substrate 100 is lifted from the hand 901 and handed over to the pusher pins 701. In other words, the substrate 100 is in contact with the pusher pins 701 but not with the hand 901. Next, the hand 901 moves in the −X direction, and as shown in FIG. 23, the hand 901 is retracted from the fourth area 60d. In other words, the hand 901 returns to the standby position.

[0142] After the hand 901 returns to the standby position, the lifting mechanism 703 lowers the lifting base 702 and the pusher pins 701. As the substrate 100 lowers, the substrate 100 approaches the levitation unit 10. The upper ends of the pusher pins 701 move below the upper surface of the levitation unit 10. The substrate 100 descends to the levitation height, and the substrate 100 is levitated above the levitation unit 10. In other words, the pusher pins 701 and the substrate 100 are no longer in contact with each other.

[0143] In this way, by using the pusher pins 701, the edge of the substrate 100 can be supported. Therefore, the deflection of the substrate 100 can be reduced. When the substrate 100 is transferred, the substrate 100 can be properly supported. When the substrate 100 is transferred from the outside, the substrate 100 can be prevented from coming into contact with the levitation unit 10. When transferring the substrate 100 from the fourth region 60d, the above operations can be reversed. The substrate 100 can be properly transferred from the levitation unit 10.

[0144] In the transfer method according to this embodiment, a substrate can be transferred onto the above-mentioned transport device 600. The transfer method includes the following steps A1 to A3. (A1) A step of receiving the substrate carried into the carrying-in area by the transfer machine 900 by raising the plurality of pusher pins. (A2) A step of moving the transfer machine 900 to a standby position outside the carry-in area. (A3) A step of lowering the substrate 100 to the levitation height of the levitation unit 10 by lowering the plurality of pusher pins.

[0145] (Pusher bar) A mechanism using a pusher bar for loading a substrate will be described with reference to Figures 25 and 26. Figure 25 is a top view that schematically shows the loading mechanism, and Figure 26 is a side view. Here, a pusher bar 751 is provided in addition to pusher pins 701. Explanation of the basic configuration other than pusher bar 751 will be omitted where appropriate. For example, the configuration and operation of pusher pins 701 are the same as those described above, and therefore explanation will be omitted.

[0146] An end portion floating unit 671 is provided on the transfer machine 900 side of the floating unit 10. In other words, the transfer machine 900 is provided on the -X side of the end portion floating unit 671. Here, the transport unit 11a is provided in the space 721 between the end portion floating unit 671 and the floating unit 10. As described above, the holding mechanism 12a of the transport unit 11a moves in the Y direction in the space 721. Therefore, the holding mechanism 12a passes between the end portion floating unit 671 and the floating unit 10. The floating unit 10 is provided with a plurality of pusher pins 701. The plurality of pusher pins 701 are arranged in the through holes of the floating unit cells 131 or in the gaps 132 between the floating unit cells.

[0147] Here, since the transport unit 11a is present in the space 721, the space in the space 721 for arranging the pusher pins 701 and their lifting mechanism is limited. Therefore, a pusher bar 751 is provided on the transfer machine 900 side of the end floating unit 671. In a top view, the pusher bar 751 extends along the X direction, i.e., the transfer direction. Multiple pusher bars 751 are lined up in a row at intervals in the Y direction. Note that, although four pusher bars 751 are provided in the transport device 600 in FIG. 25, the number of pusher bars 751 is not particularly limited. The pusher bars 751 are arranged so as not to interfere with the hand 901.

[0148] 26, pusher bar 751 moves up and down in conjunction with pusher pins 701. For example, when receiving substrate 100, pusher bar 751 and pusher pins 701 move to an elevated position. When substrate 100 is lowered to the floating height, pusher bar 751 and pusher pins 701 move to a lowered position. In a side view, pusher bar 751 is an L-shaped member, and has a rod-shaped portion extending in the X direction and a rod-shaped portion extending in the Z direction.

[0149] The portion of pusher bar 751 extending in the Z direction is disposed on the -X side of end portion floating unit 671. In the Z direction, pusher bar 751 extends from the upper side to the lower side of end portion floating unit 671. The lower end of pusher bar 751 is connected to lifting base 752. Multiple pusher bars 751 are fixed to one lifting base 752. In other words, lifting base 752 supports multiple pusher bars 751.

[0150] An elevator mechanism 753 having an actuator raises and lowers the elevator base 752. The elevator mechanism 753 extends and retracts up and down. The elevator mechanism 753 and the elevator base 752 are arranged below the end floating unit 671. In FIG. 26, the height at which the pusher pins 701 and the pusher bar 751 receive the substrate 100 is shown as the raised position. Also, the height at which the pusher pins 701 and the pusher bar 751 descend and become lower than the upper surfaces of the floating unit 10 and the end floating unit 671 is shown as the lowered position.

[0151] The lifting and lowering operation of the lifting mechanism 753 causes the multiple pusher bars 751 to lift and lower in unison. Furthermore, the lifting mechanism 703 and the lifting mechanism 753 operate in unison. Therefore, the pusher bars 751 lift and lower in unison with the pusher pins 701. Note that although the lifting mechanism 753 and the lifting mechanism 703 are shown as separate entities in FIG. 26 , the lifting mechanism 753 and the lifting mechanism 703 may be a common mechanism. In other words, a single actuator may lift and lower the pusher pins 701 and the pusher bars 751. In this case, the lifting base 752 and the lifting base 702 may be integrated. Alternatively, the lifting base 752 and the lifting base 702 may be connected. This allows the pusher pins 701 and the pusher bars 751 to lift and lower in unison with a single actuator.

[0152] In the X direction, the pusher bar 751 extends from the -X side to the +X side of the end floating unit 671. The tip of the pusher bar 751 protrudes beyond the end of the end floating unit on the +X side. In other words, the tip of the pusher bar 751 extends to the space 721 between the end floating unit 671 and the floating unit 10. In top view, the tip of the pusher bar 751 protrudes beyond the end floating unit 671 on the +X side. The pusher bar 751 is positioned so as not to interfere with the transport unit 11a. In other words, even when the transport unit 11a transports the substrate 100 in the Y direction, the pusher bar 751 does not come into contact with the holding mechanism 12a, the moving mechanism 13a, etc.

[0153] At the raised position, the tip of the pusher bar 751 on the +X side supports the end of the substrate 100. In other words, the tip of the pusher bar 751 on the +X side comes into contact with the end of the substrate 100 on the -X side. This allows the pusher pins 701 and the pusher bar 751 to lift the substrate 100 from the hand 901, making it possible to transfer the substrate 100. As the pusher bar 751 and the pusher pins 701 descend, the substrate 100 descends to the floating height.

[0154] By using the pusher bar 751 extending in the X direction, the edge of the substrate 100 can be supported. The deflection of the substrate 100 can be reduced. The substrate 100 can be properly supported when being transferred. The substrate 100 can be prevented from coming into contact with the levitation unit 10 when being transferred from the outside. When the substrate 100 is to be unloaded from the fourth area 60d, the above-described operations can be reversed. Even when the substrate is unloaded, the substrate 100 can be properly transferred from the levitation unit 10.

[0155] 25, the longitudinal direction of the rectangular substrate 100 is parallel to the transfer direction. That is, when viewed from above, the substrate 100 is rectangular, and the longitudinal direction of the substrate 100 is parallel to the X direction and the short direction is parallel to the Y direction. After the substrate 100 is transferred to the region 60d, the rotation mechanism 68 rotates the substrate 100 by 90° around the z axis (see FIG. 15). As a result, the substrate 100 is transported in the Y direction with its longitudinal direction parallel to the Y direction. That is, the rotation mechanism 68 may rotate the substrate 100 after transfer and before the start of transport. Of course, the longitudinal direction of the substrate 100 is not limited to being parallel to the transfer direction, but may be perpendicular to it. Furthermore, it is not limited to being parallel to the longitudinal direction of the substrate 100 during transport in the Y direction, but may be perpendicular to it.

[0156] As a modified example, the pusher bar 751 can also be provided around the end of the floating unit 10 on the transfer machine side. The configuration of this modified example will be described with reference to Figure 27. In Figure 27, the arrangement of the pusher bar 751 is different from that in Figure 25. Explanation of the configuration other than the arrangement of the pusher bar 751 will be omitted as appropriate.

[0157] Pusher bar 751 is disposed in fourth region 60d. That is, pusher bar 751 is disposed so as to overlap with levitation unit 10 in top view. Also, in FIG. 27, the tip of pusher bar 751 does not protrude beyond the -X side of levitation unit 10, but it may protrude. Also, pusher bar 751 is disposed so as not to interfere with transport unit 11a.

[0158] Even with this configuration, the edge of the substrate 100 can be supported. Deflection of the substrate 100 can be reduced. The substrate 100 can be properly supported when being transferred. The substrate 100 can be prevented from coming into contact with the levitation unit 10 when being transferred from the outside. The rotation mechanism 68 can be omitted.

[0159] In the method of transferring to a transport device having a pusher bar, the pusher bar 751 moves up and down in conjunction with the pusher pins 701 in the above steps (A1) and (A3).

[0160] The method of transferring to the transport device having a pusher bar includes the following steps B1 to B3. (B1) A step of receiving the substrate carried into the carrying-in area by the transfer machine by raising the plurality of pusher pins and pusher bar. (B2) moving the transfer machine to a standby position outside the loading area; (B3) A step of lowering the substrate to a levitation height of the levitation unit by lowering the plurality of pusher pins and pusher bar.

[0161] (OLED display) The semiconductor device having the polysilicon film is suitable for a TFT (Thin Film Transistor) array substrate for an organic EL (ElectroLuminescence) display. That is, the polysilicon film is used as a semiconductor layer having a source region, a channel region, and a drain region of the TFT.

[0162] Hereinafter, a configuration in which the semiconductor device according to this embodiment is applied to an organic EL display will be described. Fig. 28 is a cross-sectional view showing a simplified pixel circuit of an organic EL display. The organic EL display 300 shown in Fig. 28 is an active matrix display device in which a TFT is arranged in each pixel PX.

[0163] The organic EL display 300 includes a substrate 310, a TFT layer 311, an organic layer 312, a color filter layer 313, and a sealing substrate 314. FIG. 28 shows a top-emission organic EL display in which the sealing substrate 314 side is the viewing side. Note that the following description shows one example of the configuration of an organic EL display, and the present embodiment is not limited to the configuration described below. For example, the semiconductor device according to this embodiment may be used in a bottom-emission organic EL display.

[0164] The substrate 310 is a glass substrate or a metal substrate. A TFT layer 311 is provided on the substrate 310. The TFT layer 311 has a TFT 311a arranged in each pixel PX. The TFT layer 311 further has wiring (not shown) connected to the TFT 311a. The TFT 311a and the wiring constitute a pixel circuit.

[0165] An organic layer 312 is provided on the TFT layer 311. The organic layer 312 has an organic EL light emitting element 312a arranged for each pixel PX. Furthermore, the organic layer 312 is provided with partition walls 312b between the pixels PX to separate the organic EL light emitting elements 312a.

[0166] A color filter layer 313 is provided on the organic layer 312. The color filter layer 313 is provided with a color filter 313a for color display. That is, a resin layer colored in R (red), G (green), or B (blue) is provided in each pixel PX as the color filter 313a.

[0167] A sealing substrate 314 is provided on the color filter layer 313. The sealing substrate 314 is a transparent substrate such as a glass substrate, and is provided to prevent the organic EL light emitting elements of the organic layer 312 from deteriorating.

[0168] The current flowing through the organic EL element 312a of the organic layer 312 varies depending on the display signal supplied to the pixel circuit. Therefore, by supplying a display signal corresponding to the display image to each pixel PX, the amount of light emitted by each pixel PX can be controlled. This allows the desired image to be displayed.

[0169] In an active matrix display device such as an organic EL display, one pixel PX is provided with one or more TFTs (for example, a switching TFT or a driving TFT). The TFT of each pixel PX is provided with a semiconductor layer having a source region, a channel region, and a drain region. The polysilicon film according to this embodiment is suitable for the semiconductor layer of the TFT. That is, by using the polysilicon film manufactured by the above manufacturing method as the semiconductor layer of the TFT array substrate, it is possible to suppress in-plane variations in TFT characteristics. Therefore, it is possible to manufacture display devices with excellent display characteristics with high productivity.

[0170] (Method of manufacturing a semiconductor device) The method for manufacturing a semiconductor device using the laser irradiation apparatus according to this embodiment is suitable for manufacturing a TFT array substrate. The method for manufacturing a semiconductor device having TFTs will be described with reference to Figs. 29 and 30. Figs. 29 and 30 are cross-sectional views showing the manufacturing process of a semiconductor device. In the following description, a method for manufacturing a semiconductor device having inverted staggered TFTs will be described. Figs. 29 and 30 show the step of forming a polysilicon film in the semiconductor manufacturing method. Note that, as known techniques can be used for the other manufacturing steps, their description will be omitted.

[0171] As shown in Fig. 29, a gate electrode 402 is formed on a glass substrate 401. A gate insulating film 403 is formed on the gate electrode 402. An amorphous silicon film 404 is formed on the gate insulating film 403. The amorphous silicon film 404 is disposed so as to overlap the gate electrode 402 with the gate insulating film 403 interposed therebetween. For example, the gate insulating film 403 and the amorphous silicon film 404 are successively formed by a CVD (Chemical Vapor Deposition) method.

[0172] Then, the glass substrate 401 on which the amorphous silicon film 404 has been formed is transported to the transport device 600. The amorphous silicon film 404 is irradiated with laser light L1, thereby forming a polysilicon film 405, as shown in FIG. 30. That is, the amorphous silicon film 404 is crystallized by the laser irradiation device 1 shown in FIG. 1 etc. As a result, a polysilicon film 405, in which silicon has crystallized, is formed on the gate insulating film 403. The polysilicon film 405 corresponds to the polysilicon film described above. While the transport device 600 is transporting the glass substrate 401, the glass substrate 401 is irradiated with laser light L1. As a result, the amorphous silicon film 404 is annealed and converted into the polysilicon film 405.

[0173] Furthermore, in the above description, the laser annealing apparatus according to the present embodiment has been described as irradiating an amorphous silicon film with laser light to form a polysilicon film, but it may also be irradiating an amorphous silicon film with laser light to form a microcrystalline silicon film. Furthermore, the laser light used for annealing is not limited to an Nd:YAG laser. The method according to the present embodiment can also be applied to a laser annealing apparatus that crystallizes a thin film other than a silicon film. That is, the method according to the present embodiment can be applied to any laser annealing apparatus that irradiates an amorphous film with laser light to form a crystallized film. The laser annealing apparatus according to the present embodiment can appropriately modify a substrate with a crystallized film.

[0174] The method for manufacturing a semiconductor device according to this embodiment may include the following steps (s1) to (s3). (s1) A step of forming an amorphous film on a substrate. (s2) A step of transferring the substrate on which the amorphous film has been formed to a transfer device. (s3) A step of annealing the amorphous film by irradiating a line-shaped laser beam onto the substrate while transporting the substrate using the transport device, thereby crystallizing the amorphous film and forming a crystallized film.

[0175] In step S2, as described above, the substrate 100 is carried into the carry-in area using the pusher pins 701 and the pusher bar 751. This makes it possible to support the edge of the substrate, thereby preventing the substrate from coming into contact with the levitation unit. This allows semiconductor devices to be manufactured with high productivity.

[0176] Alternatively, the method for manufacturing a semiconductor device includes the following steps (t1) to (t3). (t1) A step of forming an amorphous film on a substrate. (t2) A step of transporting the substrate on which the amorphous film has been formed using a transport device. (t3) A step of irradiating the substrate being transported by the transport device with a line-shaped laser beam to anneal the amorphous film so as to crystallize the amorphous film and form a crystallized film.

[0177] Then, the nozzle unit 140 ejects gas onto the edge of the substrate 100 being transported. Of course, the transport device 600 does not necessarily have to include all of the above configurations. Furthermore, the transfer method, transport method, and manufacturing method do not necessarily have to include all of the above steps.

[0178] The present invention is not limited to the above-described embodiment, and can be modified as appropriate within the scope of the invention. [Explanation of symbols]

[0179] 1. Laser irradiation device 10 Levitation Unit 11 Transport unit 12 Retention mechanism 13 Moving mechanism 14 Laser irradiation unit 15 Laser light 15a Irradiation area 31 Precision levitation area 32 Semi-precision levitation area 33 Rough floating area 60a First Area 60b Second Region 60c Third Realm 60d The Fourth Realm 60e Process Area 60f passing area 670~676 End floating unit 68 Rotation mechanism 69a, 69b Alignment mechanism 100 boards 111 Precision Levitation Unit 112 Semi-precision levitation unit 113 Rough Floating Unit 131 Levitation unit cell 1311 Height adjustment mechanism 132 Gap 140 nozzle unit 141 Main body 142 Spout part 145 Connection 146 Interior Space 300 OLED display 310 Substrate 311 TFT layer 311a TFT 312 Organic layer 312a Organic EL light emitting device 312b Bulkhead 313 Color filter layer 313a Color filter (CF) 314 Sealing substrate 401 Glass substrate 402 gate electrode 403 Gate insulating film 404 Amorphous silicon film 405 Polysilicon film 671~676 End floating unit 701 Pusher Pin 702 Lifting Base 703 Lifting mechanism 710 Ejection area 751 Pusher Bar 752 Lifting Base 753 Lifting mechanism 900 Transfer machine 901 hands 902 Arm mechanism PX pixels

Claims

1. A conveying device that conveys a substrate in order to irradiate the substrate with a line-shaped laser beam, a levitation unit having an input area into which a substrate is loaded and levitating the substrate on an upper surface thereof; a first holding mechanism that holds the substrate on the floating unit; a first moving mechanism that moves the first holding mechanism in a first transport direction that is inclined from the line direction of the laser light when viewed from above, so as to change the irradiation position of the laser light on the substrate.

2. A transfer method for transferring a substrate to a transfer device that transfers the substrate so as to irradiate the substrate with a line-shaped laser beam, the method comprising: The conveying device is a levitation unit having an input area into which a substrate is loaded and levitating the substrate on an upper surface thereof; a first holding mechanism that holds the substrate on the floating unit; a first moving mechanism that moves the first holding mechanism in a first transport direction that is inclined from the line direction of the laser light when viewed from above, so as to change the irradiation position of the laser light on the substrate.

3. A conveying method for conveying a substrate using a conveying device in order to irradiate the substrate with a line-shaped laser beam, comprising: The conveying device a levitation unit including a plurality of levitation unit cells for levitating the substrate on an upper surface thereof; a holding mechanism for holding the substrate on the floating unit; a moving mechanism that moves the holding mechanism in a transport direction that is tilted from the line direction of the laser light when viewed from above, so as to change the irradiation position of the laser light on the substrate.

4. (s1) forming an amorphous film on a substrate; (s2) transferring the substrate on which the amorphous film has been formed to a transfer device; (s3) irradiating a line-shaped laser beam onto the substrate while transporting the substrate using the transport device, thereby annealing the amorphous film to crystallize the amorphous film and form a crystallized film; The conveying device is a levitation unit having an input area into which a substrate is loaded and levitating the substrate on an upper surface thereof; a first holding mechanism that holds the substrate on the floating unit; a first moving mechanism that moves the first holding mechanism in a first transport direction that is inclined from the line direction of the laser light when viewed from above, so as to change the irradiation position of the laser light on the substrate.

Images