Processing apparatus

Abstract

To provide a technique capable of processing a substrate in a short time.SOLUTION: The processing device 1 includes a table 10 configured to hold a substrate Wf such that a surface to be processed of the substrate Wf faces upward, a table rotation device 20 configured to rotate the table, a plurality of heads 30a and 40a to which processing pads Pd1 and Pd2 having an area smaller than an area of the surface to be processed of the substrate are attached, respectively, a plurality of head rotation devices 50a and 55a, a plurality of pressing devices 60a and 65a, each of the plurality of pressing devices including electromagnetic actuators configured to apply a pressing force to each of the plurality of heads by using an electromagnetic force, and a plurality of swing devices 70a and. 80a.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a processing device. [Background technology]

[0002] Conventionally, processing apparatuses configured to perform a predetermined process (e.g., polishing process) on a substrate have been known. Specifically, such processing apparatuses include a table configured to hold a substrate with the surface to be processed facing upward, and a head configured to hold a single processing pad and bring the processing pad into contact with the surface to be processed of the substrate (see, for example, Patent Documents 1 and 2). In the processing apparatuses exemplified in Patent Documents 1 and 2, the area of ​​the processing pad is smaller than the area of ​​the surface to be processed of the substrate. With this configuration, the surface to be processed of the substrate can be locally processed by the processing pad. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-58724 [Patent Document 2] Japanese Patent Application Laid-Open No. 2017-64801 Summary of the Invention [Problem to be solved by the invention]

[0004] However, the above-described conventional processing apparatuses have room for improvement in terms of processing substrates in a short time.

[0005] The present invention has been made in view of the above, and one of its objects is to provide a technique that can process a substrate in a short time. [Means for solving the problem]

[0006] (Aspect 1) In order to achieve the above-mentioned object, a processing apparatus according to one aspect of the present invention is a processing apparatus configured to perform a polishing process on a substrate as a predetermined process, and includes: a table configured to hold the substrate with the surface to be processed of the substrate facing upward; a table rotation device configured to rotate the table; a plurality of heads, each of which is attached with a processing pad having an area smaller than the area of ​​the surface to be processed of the substrate, and configured to bring the processing pad into contact with the surface to be processed of the substrate; a plurality of head rotation devices, each of which is configured to rotate each of the plurality of heads; a plurality of pressing devices, each of which has an electromagnetic actuator configured to apply a pressing force to each of the plurality of heads using electromagnetic force; and a plurality of rocking devices, each of which is configured to rock each of the plurality of heads.

[0007] According to this aspect, since a substrate can be processed using a plurality of processing pads, the substrate can be processed in a shorter time than when a substrate is processed using only a single processing pad.

[0008] Furthermore, according to this aspect, since the pressing device is provided with an electromagnetic actuator, it is possible to reduce the pressing force compared to when the pressing device is provided with a pressing mechanism such as an air cylinder instead of an electromagnetic actuator. Therefore, the pressing force can be applied to the head quickly. In this respect, too, according to this aspect, the substrate can be processed in a short time.

[0009] (Aspect 2) In the above-mentioned aspect 1, each of the plurality of heads may include a holder plate to which the processing pad is attached, a base plate positioned above the holder plate, and a rubber buffer plate positioned between the holder plate and the base plate.

[0010] (Aspect 3) In the above-mentioned aspects 1 or 2, the outer edge region, which is the region extending from the outer edge of the upper surface of the table to the center of the upper surface by a predetermined distance, may be provided with a plurality of discharge ports configured to discharge liquid toward the underside of the substrate placed on the upper surface.

[0011] (Aspect 4) In any one of the above aspects 1 to 3, the plurality of heads may include a first head having a first processing pad attached thereto and a second head having a second processing pad attached thereto, the plurality of oscillating devices may include a first oscillating device configured to oscillate the first head and a second oscillating device configured to oscillate the second head, the first oscillating device having a first oscillating axis and configured to oscillate the first head around the first oscillating axis, the second oscillating device having a second oscillating axis and configured to oscillate the first head around the second oscillating axis, and the first oscillating axis and the second oscillating axis may be positioned in an area outside the table when viewed from above.

[0012] (Aspect 5) In the above-mentioned fourth aspect, assuming a first central axis that passes through the center of the table in the top view and a second central axis that passes through the center and is perpendicular to the first central axis, the first oscillation axis and the second oscillation axis may be arranged in one of two regions defined by the first central axis, the first oscillation axis may be arranged in one of two regions defined by the second central axis, and the second oscillation axis may be arranged in the other of the two regions defined by the second central axis. [Brief explanation of the drawings]

[0013] [Figure 1] 1 is a schematic diagram illustrating a main configuration of a processing apparatus according to an embodiment. [Figure 2] FIG. 10 is a schematic top view for explaining the swinging of a plurality of heads according to the embodiment. [Figure 3]FIG. 10 is a schematic top view showing a state in which the multiple heads according to the embodiment are not positioned above the table. [Figure 4] Fig. 4A is a schematic diagram illustrating the peripheral configuration of the first head according to the embodiment, and Fig. 4B is a schematic diagram illustrating the peripheral configuration of the second head according to the embodiment. [Figure 5] 5A and 5B are schematic top and bottom views of a buffer plate according to an embodiment of the present invention. [Figure 6] Fig. 6(A) is a schematic top view of a table according to an embodiment, and Fig. 6(B) is a schematic cross-sectional view of a table according to an embodiment. [Figure 7] FIG. 3 is a schematic cross-sectional view for explaining details of a first pressing device according to the embodiment. [Figure 8] FIG. 3 is a schematic cross-sectional view for explaining details of a first pressing device according to the embodiment. [Figure 9] FIG. 10 is a schematic diagram for explaining a processing apparatus according to a first modified example of the embodiment. [Figure 10] FIG. 10 is a schematic diagram for explaining a processing apparatus according to a second modified example of the embodiment. [Figure 11] FIG. 2 is a schematic diagram illustrating a dresser according to an embodiment. [Figure 12] FIG. 4 is a schematic diagram illustrating an example of control according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0014] (Embodiment) Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are diagrammatically illustrated to facilitate understanding of the features, and the dimensional ratios of the components may not be the same as those in reality. The drawings also show XYZ Cartesian coordinates as necessary. In these Cartesian coordinates, the Z direction corresponds to the upward direction, and the -Z direction corresponds to the downward direction (the direction in which gravity acts).

[0015] FIG. 1 is a schematic diagram showing the main components of a processing apparatus 1 according to this embodiment. The processing apparatus 1 according to this embodiment is configured to perform a predetermined process on a substrate Wf. The predetermined process is not particularly limited as long as it can process the substrate Wf using a processing pad, and known processes such as polishing and cleaning can be used. In this embodiment, polishing is used as an example of the predetermined process. Furthermore, specific examples of this polishing are not particularly limited, and include chemical mechanical polishing (CMP) and mechanical polishing other than chemical mechanical polishing. In this embodiment, chemical mechanical polishing is used as an example of polishing.

[0016] The processing apparatus 1 illustrated in Fig. 1 includes a table 10, a table rotating device 20, multiple heads, multiple head rotating devices, multiple pressing devices, multiple swinging devices, a processing liquid supplying device 90, a control device 100, and a sensor group 110. Fig. 2 is a schematic top view illustrating the swinging of the multiple heads. Note that the head rotating device, pressing device, etc. are not shown in Fig. 2. Fig. 3 is a schematic top view showing a state in which the multiple heads are not positioned above the table 10.

[0017] 1, 2, and 3, the plurality of heads according to this embodiment include, for example, four heads (first head 30a, second head 40a, third head 30b, and fourth head 40b). The plurality of head rotation devices according to this embodiment include, for example, four head rotation devices (first head rotation device 50a, second head rotation device 55a, third head rotation device 50b, and fourth head rotation device 55b). The plurality of pressing devices according to this embodiment include, for example, four pressing devices (first pressing device 60a, second pressing device 65a, third pressing device 60b, and fourth pressing device 65b). The plurality of swinging devices according to this embodiment include, for example, four swinging devices (first swinging device 70a, second swinging device 80a, third swinging device 70b, and fourth swinging device 80b).

[0018] 1, the table 10 is configured to hold a substrate Wf. Specifically, the table 10 according to this embodiment holds the substrate Wf on the upper surface of the table 10 so that the surface Wfa to be processed of the substrate Wf faces upward, at least when the substrate Wf is subjected to a predetermined process (hereinafter referred to as "during substrate processing" or simply "during processing"). Note that, as an example, the area of ​​the substrate Wf is illustrated as being smaller than the area of ​​the table 10 in FIG. 2, but this is not limiting. The area of ​​the substrate Wf may be the same as the area of ​​the table 10 (i.e., the substrate Wf may have the same diameter as the table 10).

[0019] The specific method for holding the substrate Wf by the table 10 is not particularly limited, but as an example, the table 10 of this embodiment holds the substrate Wf by a vacuum chuck method (details of this vacuum chuck method will be described later).

[0020] The specific shape of the substrate Wf is not particularly limited, and may be circular, polygonal (e.g., square), or another shape. The substrate Wf according to this embodiment is circular, for example.

[0021] When placing the substrate Wf on the table 10, water may be supplied from a water supply mechanism onto the upper surface of the table 10 to form a liquid film on the upper surface of the table 10, and then the substrate Wf may be placed on the upper surface of the table 10 on which this liquid film has been formed, and then the substrate Wf may be held to the table 10 by a vacuum chuck technique. In this case, the water supply mechanism may be a discharge port 11 (FIG. 6(B)) described below, or a water supply nozzle (not shown) capable of supplying water to the upper surface of the table 10 may be used. In this way, by placing the substrate Wf on the upper surface of the table 10 on which the liquid film has been formed, it is possible to effectively prevent scratches and the like from occurring on the substrate Wf.

[0022] Furthermore, when placing the substrate Wf on the table 10, a process for aligning the center of the substrate Wf with the center of the table 10 (referred to as a "centering process of the substrate Wf") may be performed. In this case, for example, a predetermined centering device (for example, a device such as that described in Japanese Patent Application Laid-Open No. 2021-122902) may be used to perform the centering process of the substrate Wf. Specifically, a plurality of these centering devices are arranged to surround the periphery of the substrate Wf, and are configured to press the outer edge of the substrate Wf placed on the table 10 toward the center of the table 10 to align the center of the substrate Wf with the center of the table 10. Note that when performing the centering process of the substrate Wf, after the centering process, the substrate Wf may be held on the table 10 by, for example, a vacuum chuck technique. Note that this centering process may be performed while a liquid film is present between the substrate Wf and the table 10.

[0023] The table rotation device 20 is configured to rotate the table 10 during processing. Specifically, the table rotation device 20 according to this embodiment includes, as an example, a table rotation shaft 21 connected to the table 10, and a table drive device 22 configured to rotate the table rotation shaft 21. The table drive device 22 includes, for example, a known drive device such as a motor. In FIG. 1, an example of the rotation direction of the table rotation shaft 21 is indicated by "R1."

[0024] 1 and 2, the first head 30a is configured to have a first processing pad Pd1 attached thereto. The first head 30a is also configured to bring the first processing pad Pd1 into contact with the processing surface Wfa of the substrate Wf. The second head 40a is configured to have a second processing pad Pd2 attached thereto. The second head 40a is also configured to bring the second processing pad Pd2 into contact with the processing surface Wfa of the substrate Wf.

[0025] The third head 30b is configured to have a third processing pad Pd3 attached thereto. The third head 30b is configured to bring the third processing pad Pd3 into contact with the processing surface Wfa of the substrate Wf. The fourth head 40b is configured to have a fourth processing pad Pd4 attached thereto. The fourth head 40b is configured to bring the fourth processing pad Pd4 into contact with the processing surface Wfa of the substrate Wf.

[0026] The processing pads (Pd1, Pd2, Pd3, Pd4) according to this embodiment are members that slide against the processing surface Wfa of the substrate Wf to process the processing surface Wfa (for example, polishing the processing surface Wfa). The specific types of these processing pads are not particularly limited, and processing pads used for known substrate processing can be used.

[0027] In this embodiment, each of the processing pads (Pd1, Pd2, Pd3, Pd4) The area is smaller than the area of ​​the processing surface Wfa of the substrate Wf (in this embodiment, the upper surface of the substrate Wf). With this configuration, it is easier to locally polish the processing surface Wfa of the substrate Wf with the processing pad, compared to when the area of ​​the processing pad is equal to or larger than the area of ​​the processing surface Wfa of the substrate Wf.

[0028] Furthermore, as an example, the area of ​​the first processing pad Pd1 according to this embodiment is larger than the area of ​​the second processing pad Pd2. In other words, the area of ​​the second processing pad Pd2 is smaller than the area of ​​the first processing pad Pd1. Similarly, the area of ​​the third processing pad Pd3 is larger than the area of ​​the fourth processing pad Pd4. Furthermore, the area of ​​the third processing pad Pd3 is larger than the area of ​​the second processing pad Pd2.

[0029] The area ratio between the first processing pad Pd1 and the third processing pad Pd3 is not particularly limited, but in this embodiment, as an example, the area of ​​the first processing pad Pd1 is the same as the area of ​​the third processing pad Pd3. The area ratio between the second processing pad Pd2 and the fourth processing pad Pd4 is not particularly limited, but in this embodiment, as an example, the area of ​​the second processing pad Pd2 is the same as the area of ​​the fourth processing pad Pd4. However, this is not a limitation, and the area of ​​the first processing pad Pd1 may be larger or smaller than the area of ​​the third processing pad Pd3. Similarly, the area of ​​the second processing pad Pd2 may be larger or smaller than the area of ​​the fourth processing pad Pd4.

[0030] Further, as an example of numerical values ​​for the area ratio, the areas of the first processing pad Pd1 and the third processing pad Pd3 may each be 10% or less (for example, 5% to 10%) of the area of ​​the processing surface Wfa of the substrate Wf. Furthermore, the area of ​​the second processing pad Pd2 (or the fourth processing pad Pd4) may be 70% or less (for example, 20% to 70%) of the area of ​​the first processing pad Pd1 (or the third processing pad Pd3). However, these are merely examples of area ratios, and the specific area ratio may be set appropriately depending on the type of substrate Wf, etc.

[0031] As described above, in this embodiment, the area of ​​the first processing pad Pd1 is larger than that of the second processing pad Pd2, and the area of ​​the third processing pad Pd3 is larger than that of the fourth processing pad Pd4, but this configuration is not limited to this. The areas of the multiple pads (Pd1, Pd2, Pd3, Pd4) included in the processing device 1 may be the same.

[0032] As described above, the processing apparatus 1 according to this embodiment includes four heads as an example, but is not limited to this configuration. The processing apparatus 1 may include at least two heads (e.g., the first head 30a and the second head 40a). That is, the processing apparatus 1 may not include any heads other than the first head 30a and the second head 40a, or may include only one head or three or more heads other than the first head 30a and the second head 40a.

[0033] Each of the plurality of head rotation devices (50a, 55a, 50b, 55b) is configured to rotate each of the plurality of heads (30a, 40a, 30b, 40b) during processing.

[0034] Specifically, the first head rotation device 50a according to this embodiment is, for example, connected to the first head 30a via a head rotation shaft 51a, and rotates the first head 30a by rotating the head rotation shaft 51a. The second head rotation device 55a according to this embodiment is, for example, connected to the second head 40a via a head rotation shaft 56a, and rotates the second head 40a by rotating the head rotation shaft 56a. The third head rotation device 50b according to this embodiment is, for example, connected to the third head 30b via a head rotation shaft 51b. The fourth head rotation device 55b according to this embodiment is connected to the fourth head 40b via a head rotation shaft 56b, for example, and rotates the fourth head 40b by rotating the fourth head 40b.

[0035] 1, an example of the rotation direction of the plurality of heads is illustrated as "R2." In this embodiment, the rotation direction of the plurality of heads is, for example, the same direction as the rotation direction of the table 10.

[0036] Each of the multiple head rotation devices (50a, 55a, 50b, 55b) is equipped with a known driving device such as a motor. The configuration of such a head rotation device is similar to that of known head rotation devices such as those disclosed in Patent Document 1 and Patent Document 2, so further detailed description will be omitted.

[0037] The first pressing device 60a is configured to apply a pressing force to the first head 30a during processing. The second pressing device 65a is configured to apply a pressing force to the second head 40a during processing. The third pressing device 60b is configured to apply a pressing force to the third head 30b during processing. The fourth pressing device 65b is configured to apply a pressing force to the fourth head 40b during processing. Each of these pressing devices is connected to an arm (arms 71a, 81a, 71b, 81b) corresponding to the respective pressing device via a connecting member 120. Details of these pressing devices will be described later.

[0038] Each of the plurality of rocking devices (70a, 80a, 70b, 80b) is configured to rock each of the plurality of heads (30a, 40a, 30b, 40b) during processing.

[0039] Specifically, the first oscillation device 70a according to this embodiment includes, for example, an arm 71a extending horizontally and connected to the first head 30a via a head rotation shaft 51a, an oscillation shaft 72a (first oscillation shaft) connected to the end of the arm 71a and extending vertically, and a drive device 73a configured to drive and oscillate the oscillation shaft 72a. The first oscillation device 70a oscillates the first head 30a parallel to the upper surface of the table 10 (i.e., parallel to the processing surface Wfa of the substrate Wf) by oscillating the arm 71a within a horizontal plane around the oscillation shaft 72a.

[0040] Moreover, as an example, the second oscillating device 80a according to this embodiment includes an arm 81a extending horizontally and connected to the second head 40a via the head rotation shaft 56a, an oscillating shaft 82a (second oscillating shaft) connected to the end of the arm 81a and extending vertically, and a drive device 83a configured to drive and oscillate the oscillating shaft 82a. The second oscillating device 80a oscillates the second head 40a parallel to the upper surface of the table 10 by oscillating the arm 81a in a horizontal plane around the oscillating shaft 82a.

[0041] Moreover, the third oscillation device 70b according to this embodiment includes, as an example, an arm 71b extending horizontally and connected to the third head 30b via the head rotation shaft 51b, an oscillation shaft 72b (third oscillation shaft) connected to the end of the arm 71b and extending vertically, and a drive device 73b configured to drive and oscillate the oscillation shaft 72b. The third oscillation device 70b oscillates the third head 30b parallel to the upper surface of the table 10 by oscillating the arm 71b in a horizontal plane around the oscillation shaft 72b.

[0042] Further, the fourth oscillation device 80b according to this embodiment includes, for example, an arm 81b extending in the horizontal direction and connected to the fourth head 40b via a head rotation shaft 56b, an oscillation shaft 82b (fourth oscillation shaft) connected to the end of the arm 81b and extending in the vertical direction, and an oscillation shaft 82c (fourth oscillation shaft) connected to the end of the arm 81b. The fourth oscillating device 80b oscillates the fourth head 40b parallel to the upper surface of the table 10 by oscillating the arm 81b in a horizontal plane around the oscillating shaft 82b.

[0043] The configuration of these rocking devices is similar to that of known rocking devices such as those disclosed in Patent Documents 1 and 2, and therefore further detailed description will be omitted.

[0044] Furthermore, the specific dimensions of the multiple arms are not particularly limited. However, for example, the length of the arm may be set so that at least one pad selected from the multiple pads can process the entire surface Wfa of the substrate Wf to be processed (i.e., the entire surface Wfa from the center to the outer edge). To give a specific example, the length of the arm 71a may be set so that at least the first processing pad Pd1 can process (polish) the entire surface Wfa of the substrate Wf to be processed.

[0045] Referring to FIG. 1, the processing liquid supply device 90 is a device for supplying a processing liquid (in this embodiment, a polishing slurry as an example) onto the substrate Wf during processing. The processing device 1 according to this embodiment polishes the processing surface Wfa of the substrate Wf while rubbing the processing surface Wfa of the substrate Wf with processing pads (Pd1, Pd2, Pd3, Pd4) in the presence of the polishing slurry. The polishing slurry is composed of a liquid containing a processing agent such as abrasive grains. The processing liquid supply device 90 according to this embodiment is configured, as an example, to supply the polishing slurry to the processing surface of the substrate Wf from a processing liquid supply nozzle 91.

[0046] The processing liquid supply nozzle 91 may be configured to swing together with the head. Specifically, in this case, the processing liquid supply nozzle 91 may be connected to at least one arm selected from the plurality of arms (arms 71a, 71b, 81a, 81b) and may supply the polishing slurry while swinging integrally with the connected arm. In this case, the processing liquid supply device 90 may include a plurality of processing liquid supply nozzles 91. The processing liquid supply nozzle 91 may be arranged so that the polishing slurry is supplied onto the substrate Wf located upstream of at least one head selected from the plurality of heads in the rotation direction of the substrate Wf.

[0047] In addition, when the processing apparatus 1 is, for example, a cleaning apparatus that performs a cleaning process on the substrate Wf, the processing liquid supply apparatus 90 may be configured to supply a cleaning liquid (which is also an example of a processing liquid).

[0048] The sensor group 110 is a sensor for detecting various physical parameters of the processing device 1. The parameters detected by the sensor group 110 are transmitted to the control device 100.

[0049] The sensor group 110 according to this embodiment includes, as an example, a pressure sensor for detecting the pressing force applied by each pressing device. In this embodiment, as an example of this pressure sensor, a load cell 112 is included (the reference numeral is exemplified in FIG. 7 described later).

[0050] The sensor group 110 also includes a swing speed sensor for detecting the swing speed (rotation speed during swing) of each head, a rotation speed sensor for detecting the rotation speed (autorotation speed) of each head, and a rotation speed sensor for detecting the rotation speed of the table 10.

[0051] The sensor group 110 also includes a phase sensor for detecting the swing phase (rotation phase) of each head, a phase sensor for detecting the rotation phase of the table 10, and the like.

[0052] The sensor group 110 also measures the temperature of the substrate before and / or during the substrate processing. The processing apparatus 1 also includes a film thickness sensor 111 for detecting the film thickness of Wf. As an example, the film thickness sensor 111 according to this embodiment is disposed on at least one of the arms (71a, 71b, 81a, 81b) of the processing apparatus 1.

[0053] The film thickness sensor 111 may detect the film thickness at a predetermined representative location on the substrate Wf. Alternatively, the film thickness sensor 111 may detect the overall film thickness of the substrate Wf (the overall film thickness from the center to the outer edge). When the film thickness sensor 111 detects the overall film thickness of the substrate Wf, for example, the sensor group 110 may include a plurality of film thickness sensors 111. Alternatively, the film thickness sensor 111 may be disposed on at least one of a plurality of arms (swinging arms) of the processing apparatus 1, and may measure the overall film thickness of the substrate Wf while swinging integrally with the arm on which the film thickness sensor 111 is disposed.

[0054] Alternatively, if the processing apparatus 1 has three or more arms, one of the arms may not have a head attached thereto, but may have the film thickness sensor 111 attached thereto instead. Even in this case, the film thickness sensor 111 can be swung by the arm to easily detect the overall film thickness of the substrate Wf.

[0055] The processing apparatus 1 may further include an atomizer device (not shown) configured to spray atomizer liquid (a specific example of which is "nitrogen-containing water") toward the upper surface of the table 10. Specifically, in this case, for example, the atomizer device may be disposed on at least one of the multiple arms and may spray the atomizer liquid toward the upper surface of the table 10 (or the upper surface of the substrate Wf, if the substrate Wf is disposed thereon) while swinging integrally with the arm.

[0056] The control device 100 is a device for comprehensively controlling the operation of the processing device 1. Specifically, the control device 100 according to this embodiment includes a microcomputer. This microcomputer includes a processor 101, a storage device 102 as a non-transitory storage medium, and the like. In the control device 100, the processor 101 controls the operation of the processing device 1 based on commands from a program stored in the storage device 102, for example.

[0057] Furthermore, during processing, the control device 100 according to this embodiment controls the operation of the table rotation device 20 (specifically, the table drive device 22), each head rotation device, each pressing device, and each oscillating device (specifically, the drive device for the oscillating device) based on parameters detected by the sensor group 110.

[0058] Furthermore, the control device 100 may perform all substrate processing steps fully automatically based on a program, or may perform all or some of the substrate processing steps based on instructions from a user (operator).

[0059] Next, details of the oscillation shafts and the oscillation of the multiple heads will be described with reference to Figures 2 and 3. First, the multiple oscillation shafts (72a, 82a, 72b, 82b) according to this embodiment are arranged in an area outside the table 10 in top view.

[0060] Here, when viewed from above, the table 10 is assumed to have a first central axis XL1 (extending in the X-axis direction) passing through the center of the table 10, and a second central axis XL2 (extending in the Y-axis direction) passing through the center of the table 10 and perpendicular to the first central axis XL1.

[0061] The oscillation shafts 72a and 72b according to this embodiment are disposed in one of the two regions defined by the second central axis XL2 (the region on the X-direction side of the second central axis XL2). The oscillation shafts 82a and 82b are disposed in the other of the two regions defined by the second central axis XL2. The second central axis XL2 is disposed in the area on the -X direction side (the area on the -X direction side of the second central axis XL2).

[0062] In addition, the oscillating axes 72a, 82a in this embodiment are arranged in one of the two regions defined by the first center axis XL1 (the region on the -Y direction side of the first center axis XL1), and the oscillating axes 72b, 82b are arranged in the other of the two regions defined by the first center axis XL1 (the region on the Y direction side of the first center axis XL1).

[0063] According to this embodiment, since the multiple swing shafts (72a, 82a, 72b, 82b) are arranged as described above, it is possible to easily prevent the multiple arms connected to these swing shafts from interfering with each other when swinging. Furthermore, when mounting the substrate Wf on the table 10 or removing the substrate Wf from the table 10 (i.e., "mounting or removing the substrate Wf"), or when performing "maintenance" such as replacing a processing pad, it is possible to easily move the head and arm as shown in FIG. 3, which will be described later. This makes it possible to easily prevent the multiple swing shafts and multiple arms from interfering with these operations.

[0064] Furthermore, the oscillation shafts 72a, 82a, 72b, and 82b according to this embodiment are disposed in the vicinity of the first central axis XL1. Note that in this embodiment, "a member is in the vicinity of the central axis" specifically means that the distance between the center of the member and the central axis is smaller than ⅓ of the radius of the upper surface 10a of the table 10.

[0065] In addition, the swing angle range (α1) of the first head 30a, the swing angle range (α2) of the second head 40a, the swing angle range (α3) of the third head 30b, and the swing angle range (α4) of the fourth head 40b according to this embodiment are each, for example, 90°. However, the swing angle ranges of these heads are not limited to 90° and may be smaller or larger than 90°. Furthermore, the swing angle ranges of the multiple heads do not need to be the same value, and may be different values. Furthermore, the swing angle range of at least one of the first head 30a and the third head 30b may be set to be larger than 90° so that the substrate Wf can be polished down to the center.

[0066] The oscillating device (70a, 80a, 70b, 80b) may oscillate the head (30a, 40a, 30b, 40b) so that the head moves back and forth between a predetermined location on the upper surface 10a of the table 10 (in FIG. 2, a location near the first central axis XL1) and a predetermined location outside the table 10, as illustrated in FIG.

[0067] The first and third rocking devices 70a and 70b may rock the first and third heads 30a and 30b so that the first and third heads 30a and 30b move closer to or farther away from each other. The second and fourth rocking devices 80a and 80b may rock the second and fourth heads 40a and 40b so that the second and fourth heads 40a and 40b move closer to or farther away from each other.

[0068] In this embodiment, the head is temporarily positioned outside the table 10 during swing (i.e., it protrudes outside the table 10), but this configuration is not limited to this. The head may swing so as to move back and forth between a predetermined location on the upper surface 10a of the table 10 and the outer edge of the upper surface 10a of the table 10 so as not to protrude outside the table 10.

[0069] Furthermore, in the case of a configuration in which the head protrudes outside the table 10 during swinging, as in this embodiment, the processing device 1 may be provided with a support base 17 (illustrated in FIG. 3) for supporting the head protruding outside the table 10 from below. This support base 17 is When not in use, it may be stored, for example, inside the processing apparatus 1 (for example, below the table 10, etc.) Furthermore, when the processing apparatus 1 includes a support base 17, it is preferable that the outer diameter of the table 10 is the same as the outer diameter of the substrate Wf.

[0070] 11, the processing apparatus 1 may include dressers 130a, 130b, 130c, and 130d for dressing the processing pads (Pd1 to Pd4). The dresser 130a is for the first processing pad Pd1, the dresser 130b is for the second processing pad Pd2, the dresser 130c is for the third processing pad Pd3, and the dresser 130d is for the fourth processing pad Pd4. The processing apparatus 1 can dress the processing pads by bringing the processing pads into contact with the surfaces of the dressers and rotating the processing pads.

[0071] 11 is merely one example of a dresser, and the position and size of the dresser in the actual processing apparatus 1 are not limited to those shown in Fig. 11. Furthermore, when processing apparatus 1 includes both support table 17 and a dresser, it is preferable that the dresser be placed in a position that does not overlap with support table 17 (a position that does not interfere with support table 17).

[0072] 2, when multiple heads are positioned above the table 10 before the substrate Wf is attached or detached or before maintenance work is performed, the control device 100 preferably controls multiple oscillating devices so that the multiple heads are positioned outside the table 10, as shown in FIG. 3. In this case, the arms 71a and 81a oscillate like so-called "double doors," and the arms 71b and 81b also oscillate like so-called "double doors." This ensures that when the multiple heads are positioned outside the table 10, the arms, heads, and oscillating shafts do not get in the way of the attachment or detachment work of the substrate Wf or the maintenance work, making it easier to attach or detach the substrate Wf or the maintenance work.

[0073] According to the present embodiment as described above, the substrate Wf can be processed using multiple processing pads (specifically, at least the first processing pad Pd1 and the second processing pad Pd2), which allows the substrate Wf to be processed (e.g., polished) in a shorter time than when the substrate Wf is processed using only a single processing pad.

[0074] Furthermore, according to this embodiment, the first processing pad Pd1, which has a relatively large area, can be used to process a wide area of ​​the substrate Wf (specifically, polishing), while the second processing pad Pd2, which has a relatively small area, can be used to process a localized area of ​​the substrate Wf. As a result, the first processing pad Pd1 can maintain the processing rate (specifically, the polishing rate), while the second processing pad Pd2 can ensure the uniformity of the film thickness of the substrate Wf.

[0075] Next, a specific example of control by the control device 100 will be described. For example, the control device 100 may control the processing device 1 (specifically, the oscillation device of the processing device 1) so that the entire processing surface Wfa of the substrate Wf is polished with at least one processing pad (referred to as a "specific processing pad") selected from among the multiple processing pads. In this case, the control device 100 may also control the processing device 1 so that at least one processing pad selected from among the multiple processing pads other than the specific processing pad is used to locally polish a portion of the processing surface Wfa of the substrate Wf where the film thickness of the substrate Wf is relatively thick compared to the entire substrate Wf.

[0076] Specifically, in this case, the control device 100 acquires the overall film thickness of the substrate Wf and acquires the film thickness of the relatively thick portion of the substrate Wf based on the detection result of the film thickness sensor 111 before the start of the processing of the substrate Wf and / or during the processing of the substrate Wf. Then, when processing the substrate Wf, the control device 100 may polish the entire (entire) processing surface Wfa of the substrate Wf using, for example, the first processing pad Pd1 of the first head 30a (and / or the third processing pad Pd3 of the third head 30b), while locally (or intensively) polishing a portion of the substrate Wf where the film thickness is relatively thick (a portion where the film thickness is thicker than other portions) using, for example, the second processing pad Pd2 of the second head 40a (and / or the fourth processing pad Pd4 of the fourth head 40b).

[0077] This configuration allows the film thickness of the substrate Wf to be uniform at an early stage, particularly the film thickness distribution in the circumferential direction of the substrate Wf to be uniform at an early stage, thereby shortening the overall processing time for the substrate Wf.

[0078] Furthermore, the control device 100 may control the pressing force of at least one pressing device selected from the plurality of pressing devices based on the film thickness of the substrate Wf so that the pressing force applied by the pressing device varies depending on the film thickness of the substrate Wf. This configuration allows the film thickness of the substrate Wf to be uniform at an early stage.

[0079] To give a specific example of this, as in the example described above, when a portion of the substrate Wf where the film thickness is relatively thick relative to the entire substrate Wf is locally polished, for example, with the second processing pad Pd2 of the second head 40a, the pressing force applied to the second head 40a may be changed according to the film thickness of the substrate Wf so that the pressing force applied to the second head 40a becomes stronger as the film thickness of the substrate Wf becomes thicker.

[0080] In this case, for example, the storage device 102 of the control device 100 may have stored in advance a control map that associates the pressing force applied by the pressing device with the film thickness of the substrate Wf. This control map specifies, for example, that the thicker the film thickness of the substrate Wf, the stronger the pressing force. During processing, the control device 100 obtains the film thickness of the substrate Wf based on the detection result of the film thickness sensor 111, obtains the pressing force corresponding to this obtained film thickness from the control map, and controls the pressing device so as to obtain this obtained pressing force. This makes it possible to easily change the pressing force according to the film thickness of the substrate Wf.

[0081] Alternatively, when the control device 100 acquires (detects) a portion of the substrate Wf where the film thickness is relatively thick based on the detection result of the film thickness sensor 111 during processing, the control device 100 may control the pressing device (second pressing device 65a) so that the pressing force applied to the processing pad (e.g., the second processing pad Pd2) polishing the portion of the substrate Wf where the film thickness is relatively thick is stronger than the pressing force applied to the first processing pad Pd1. Even in this configuration, the pressing force can be easily changed according to the film thickness of the substrate Wf.

[0082] When there are multiple thick film portions, the control device 100 may locally polish one selected from the multiple portions using the second processing pad Pd2, and locally polish one selected from the remaining portions using the fourth processing pad Pd4. That is, the thick film portions of the substrate Wf may be locally polished by sharing the work between the second processing pad Pd2 and the fourth processing pad Pd4.

[0083] Furthermore, the control device 100 may control the pressing force applied by at least one pressing device selected from the plurality of pressing devices based on the rotation phase of the table 10.

[0084] Specifically, in this case, for example, a control map that associates the pressing force applied by the pressing device with the rotation phase of the table 10 may be stored in advance in the storage device 102 of the control device 100. This control map may be configured so that the pressing force applied by the pressing device changes depending on the rotation phase of the table 10. During processing, the control device 100 The rotational phase of table 10 is acquired based on the detection results of sensor group 110 (specifically, phase sensors), and the pressing force corresponding to this acquired rotational phase is acquired from the control map. Control device 100 controls the pressing device so as to obtain this acquired pressing force. This makes it easy to control the pressing force of the pressing device based on the rotational phase of table 10.

[0085] The film thickness distribution information of the substrate Wf may be information measured by, for example, a film thickness measuring device (not shown) external to the processing apparatus 1. In this case, the film thickness distribution information of the substrate Wf measured by this film thickness measuring device is stored in the storage device 102 of the control device 100 of the processing apparatus 1. For example, when the substrate Wf is placed on the table 10, by always positioning a notch provided in the substrate Wf at a predetermined angle to the table 10, it is possible to correlate the polar coordinates in the film thickness distribution information of the substrate Wf with the rotational phase of the table 10.

[0086] Alternatively, the control device 100 may control the processing device 1 as follows. First, a schematic diagram illustrating this control is shown in Fig. 12. Fig. 12 illustrates "thick film regions (A1, A2, A3, A4)" in which the film thickness of the substrate Wf is thicker than a reference value.

[0087] For example, with respect to the second head 40a, the control device 100 may increase the pressing force of the second head 40a when the thick film region A1 comes under the second head 40a. For example, with respect to the fourth head 40b, the control device 100 may also increase the pressing force of the fourth head 40b when the thick film region A1 comes under the fourth head 40b. In this case, the control device 100 may oscillate the second head 40a or the fourth head 40b within a required angular range when these heads polish the thick film region A1. Furthermore, with respect to the second head 40a or the fourth head 40b, when the planarization of the thick film region A1 has progressed or is completed, the control device 100 may move the second head 40a or the fourth head 40b to an oscillating position corresponding to another region (e.g., thick film region A4) and continue polishing.

[0088] With regard to the third head 30b, the control device 100 may increase the pressing force of the third head 30b when the thick film regions A2 and A3 come under the third head 30b. At this time, even if the third head 30b is larger than the thick film regions A2 and A3, by disposing the third head 30b so as to straddle the outer circumferential region of the substrate Wf and the support table 17, the thick film regions A2 and A3 can be preferentially polished.

[0089] Furthermore, the control device 100 may control the first head 30a so that polishing is uniform from the center to the outer periphery of the substrate Wf. Furthermore, the control device 100 may control the first head 30a so that polishing is uniform from the center to the outer periphery when the thick film region A4 comes under the first head 30a. Furthermore, the polishing of the outer periphery of the substrate Wf, where the thick film regions A2 and A3 exist, may be performed by the third head 30b, and the first head 30a may perform polishing within an oscillation range inside the outer periphery.

[0090] Furthermore, when it is not necessary to polish the entire surface of the substrate Wf from the center to the outer periphery, each head may change to a low pressure force at a predetermined timing (for example, a timing at which the pressure force is not increased) so that polishing does not substantially progress, or the head may be moved away from the substrate Wf.

[0091] In this way, in order to increase the pressure of the head when a thick film region comes under the head and perform localized polishing, it is preferable to change the pressure with good responsiveness. A configuration for achieving this will be described later. Note that if the substrate Wf partially has a "thin film region (a region where the film thickness is lower than a reference value)," the control device 100 may control each head to polish a region other than the thin film region.

[0092] However, the configuration is not limited to the above. For example, the control device 100 may be configured as follows: In this case, the control device 100 may change the rotation speed of the table 10 while maintaining the pressing force of the pressing device constant (a predetermined value set in advance).

[0093] Specifically, in this case, during processing, the control device 100 brings at least one processing pad selected from the plurality of processing pads (e.g., the second processing pad Pd2) into contact with the relatively thick portion of the substrate Wf, and reduces the rotation speed of the table 10 below a reference value (normal rotation speed) while maintaining a constant pressing force of the second processing pad Pd2, thereby lengthening the time that the substrate Wf and the processing pad are in contact. Even in this case, the second processing pad Pd2 can selectively polish the relatively thick portion of the substrate Wf. Alternatively, instead of changing the rotation speed of the table 10, the rotation speed of the second processing pad Pd2 may be changed.

[0094] Next, the peripheral configuration of the heads will be described. Fig. 4(A) is a schematic diagram illustrating the peripheral configuration of the first head 30a, and Fig. 4(B) is a schematic diagram illustrating the peripheral configuration of the second head 40a. The first head 30a according to this embodiment includes, as an example, a holder plate 38 to which a first processing pad Pd1 is attached, a base plate 34 disposed above the holder plate 38, and a rubber buffer plate 33 disposed between the holder plate 38 and the base plate 34.

[0095] Moreover, the holder plate 38 according to this embodiment includes, for example, a pad table 31 to which the first processing pad Pd1 is attached, and a pad holder 32 to which the first pad table is attached.

[0096] In addition, the second head 40a of this embodiment includes, as an example, a holder plate 48 to which the second processing pad Pd2 is attached, a base plate 44 arranged above the holder plate 48, and a rubber buffer plate 43 arranged between the holder plate 48 and the base plate 44.

[0097] Moreover, the holder plate 48 according to this embodiment includes, as an example, a pad table 41 to which the second processing pad Pd2 is attached, and a pad holder 42 to which the pad table 41 is attached.

[0098] The first processing pad Pd1 is attached to the pad table 31 via an adhesive, for example. The pad table 31 is attached to the pad holder 32 by a magnet or the like, for example. The pad holder 32, the buffer plate 33, and the base plate 34 are connected to each other by fastening members, for example, bolts.

[0099] Similarly, the second processing pad Pd2 is attached to the pad table 41 by adhesive or the like, for example. The pad table 41 is attached to the pad holder 42 by magnets or the like, for example. The pad holder 42, the buffer plate 43, and the base plate 44 are connected to each other by fastening members such as bolts or the like, for example.

[0100] The third head 30b according to this embodiment also has a configuration similar to that of the first head 30a described above. That is, the third head 30b also has a holder plate 38 (which holds the third processing pad Pd3), a base plate 34, and a rubber buffer plate 33. The fourth head 40b according to this embodiment also has a configuration similar to that of the second head 40a described above. That is, the fourth head 40b also has a holder plate 48 (which holds the fourth processing pad Pd4), a base plate 44, and a rubber buffer plate 43.

[0101] 5(A) is a schematic top view of the buffer plate 33, and FIG. 5(B) is a schematic bottom view of the buffer plate 33. As described above, when the buffer plate 33 is attached using bolts, the buffer plate 33 may be provided with through holes 35 for inserting bolts for connecting the base plate 34 and the buffer plate 33 and bolts for connecting the pad holder 32 and the buffer plate 33. The buffer plate 33 may also be provided with countersunk holes 36 for accommodating the heads of the bolts. This configuration can prevent the heads of the bolts from protruding outward from the buffer plate 33.

[0102] The buffer plate 33 may also be in the shape of a ring having a through-hole 37 in the center thereof. However, the configuration is not limited to this, and the buffer plate 33 may also be in the shape of a disk without the through-hole 37.

[0103] The buffer plate 43 may also have the same configuration as the buffer plate 33 described above. That is, the buffer plate 43 may also be provided with a through hole 35 for inserting a bolt and a countersunk hole 36 for accommodating the head of the bolt. The buffer plate 43 may also be annular in shape and have a through hole 37 in its center. Alternatively, the buffer plate 43 may be disk-shaped and have no through hole 37.

[0104] According to this embodiment, the first head 30a and the third head 30b are provided with the rubber buffer plate 33. Therefore, even if the head rotation axis is not strictly perpendicular to the table 10, the buffer plate 33 can absorb the tilt of the rotation axis, making it easy to bring the entire lower surface of the processing pad into contact with the substrate Wf. Furthermore, even if the surface of the substrate Wf periodically moves up and down due to the surface accuracy of the table 10, the buffer plate 33 can absorb the undulations of the surface of the substrate Wf. Furthermore, with this configuration, the pressing force applied from the first pressing device 60a and the third pressing device 60b can be transmitted to the first processing pad Pd1 and the third processing pad Pd3 more quickly than, for example, when the first head 30a and the third head 30b are provided with an "airbag-type buffer member" instead of the buffer plate 33.

[0105] Similarly, according to this embodiment, the second head 40a and the fourth head 40b are equipped with rubber buffer plates 43, which makes it easy to bring the entire lower surfaces of the processing pads into contact with the substrate Wf. Furthermore, with this configuration, the pressing force applied by the second pressing device 65a and the fourth pressing device 65b can be transmitted to the second processing pad Pd2 and the fourth processing pad Pd4 more quickly than in the case where the second head 40a and the fourth head 40b are equipped with airbag-type buffer members instead of the buffer plates 43.

[0106] Next, the peripheral configuration of the table 10 will be described. FIG. 6(A) is a schematic top view of the table 10. FIG. 6(B) is a schematic cross-sectional view of the table 10. Note that in FIG. 6(B), the outer diameter of the table 10 and the outer diameter of the substrate Wf are the same. When the substrate Wf is held on the table 10 by a vacuum chuck technique, as illustrated in FIGS. 6(A) and 6(B), the table 10 is provided with a suction port 14 for sucking air. Specifically, the suction port 14 may be provided, for example, in the center of the upper surface 10a of the table 10. Also, referring to FIG. 6(B), the lower surface of the table 10 is provided with an exhaust port 15 for discharging the sucked air. The exhaust port 15 is connected to a suction device (not shown) such as a vacuum pump via a pipe (not shown). Also, a gas passage 16 is provided inside the table 10, connecting the suction port 14 and the exhaust port 15.

[0107] The number of suction ports 14 is not limited to one. For example, the suction ports 14 may be provided in a number of different positions. A plurality of suction ports 14 may be provided on the upper surface 10a of the filter 10. The shape of the suction port 14 is not particularly limited, and various shapes may be used, such as a circle, an annular shape, a shape in which a plurality of straight lines intersect (such as a cross shape), a polygon, or a shape formed by combining two or more of these shapes.

[0108] After the substrate Wf is placed on the upper surface 10a of the table 10, air is sucked through the suction port 14, whereby the substrate Wf can be held on the upper surface 10a of the table 10 by a vacuum chuck method.

[0109] Furthermore, when the substrate Wf is held on the table 10 by a vacuum chuck method, the substrate Wf may be held using a so-called "pin chuck method" in order to distribute the suction pressure applied to the substrate Wf while maintaining the holding force of the substrate Wf. Specifically, in this case, a plurality of pins are arranged on the upper surface 10a of the table 10 so as to protrude upward. The substrate Wf is placed on the tips (upper ends) of these pins. With the substrate Wf placed on these pins, air is sucked through the suction port 14, thereby holding the substrate Wf on the table 10.

[0110] 6(A) and 6(B), a plurality of discharge ports 11 configured to discharge a liquid (water, as an example in this embodiment) upward may be provided in the outer edge region RM of the upper surface 10a of the table 10. Specifically, the discharge ports 11 are configured to discharge the liquid toward the lower surface of the substrate Wf placed on the upper surface 10a of the table 10 (i.e., the lower surface of the substrate Wf facing the upper surface 10a of the table 10). In this embodiment, the plurality of discharge ports 11 are, as an example, arranged at equal intervals in the circumferential direction of the table 10.

[0111] The outer edge region RM of the upper surface 10a refers to a region extending a predetermined distance from the outer edge (the outermost end) of the upper surface 10a toward the center of the upper surface 10a (this outer edge region RM also includes the outer edge of the upper surface 10a). The specific value of this predetermined distance is not particularly limited, but for example, a value of one-tenth or less of the diameter of the upper surface 10a can be used.

[0112] 6(B), a supply port 12 through which a liquid (water) is supplied is provided on, for example, the underside of the table 10. The supply port 12 is connected to a pressure-feeding device (not shown) such as a liquid pump via piping (not shown). A liquid passage 13 that connects the supply port 12 to a plurality of discharge ports 11 is provided inside the table 10. The liquid (water) supplied to the supply port 12 passes through the liquid passage 13 and is discharged from the plurality of discharge ports 11. The plurality of discharge ports 11 may continue to discharge the liquid, for example, from the start to the end of processing of the substrate Wf.

[0113] According to this configuration, the liquid discharged from the multiple discharge ports 11 can prevent foreign matter (including, for example, polishing slurry) from entering between the substrate Wf and the table 10. Specifically, the liquid (water) discharged upward from the multiple discharge ports 11 can expel slurry that has flowed around the edge of the substrate Wf to the outside of the substrate Wf. This prevents foreign matter such as slurry from entering an area inside the discharge ports 11 and being sucked into the suction port 14. In other words, the liquid discharged upward from the multiple discharge ports 11 functions as a "water seal (or "liquid wall")." This prevents foreign matter from entering between the substrate Wf and the table 10.

[0114] The discharge port 11 is provided radially inward from the outer edge of the substrate Wf placed on the table 10. When the discharge port 11 is provided radially inward from the outer edge of the substrate Wf, in order to prevent the substrate Wf from completely blocking the discharge port 11 and inhibiting the discharge of liquid from the discharge port 11, Therefore, for example, the position (height position) of the discharge port 11 on the upper surface of the table 10 may be located lower than other parts of the upper surface of the table 10. Furthermore, as described above, when the substrate Wf is held by the "pin chuck method," the discharge port 11 may be located lower than the upper ends of the multiple pins.

[0115] Next, the peripheral configuration of the pressing device will be described. FIGS. 7 and 8 are schematic cross-sectional views for explaining the details of the first pressing device 60a. Specifically, FIG. 7 illustrates an example of the peripheral configuration of the first pressing device 60a. Also, FIG. 8 is an enlarged cross-sectional view of the first pressing device 60a of FIG. 7. Referring to FIGS. 7 and 8, the first pressing device 60a includes an electromagnetic actuator 61 configured to apply a pressing force to the first head 30a by utilizing electromagnetic force. In this embodiment, a "voice coil motor" is used as a specific example of this electromagnetic actuator 61.

[0116] Referring to Figure 8, specifically, the electromagnetic actuator 61 (voice coil motor) of this embodiment includes a coil 61a and magnets (magnets 61b and 61c) configured to generate an electromagnetic force (F1), and is configured to apply this generated electromagnetic force (F1) to the first head 30a as the aforementioned pressing force.

[0117] More specifically, the electromagnetic actuator 61 of this embodiment includes, in addition to the coil 61a and magnet described above, a coil core 61d, a support plate 61e, an upper plate 61f, a lower plate 61g, and a spring 61h.

[0118] The coil 61a is wound around a cylindrical coil core 61d (in this embodiment, as an example, a cylindrical shape with a bottom). The lower end (bottom in this embodiment) of the coil core 61d is connected to the upper surface of the lower plate 61g. The coil 61a is electrically connected to a power source 63 serving as a current supply device via wiring 62. The power source 63 supplies a current (I) to the coil 61a in response to an instruction from, for example, the control device 100.

[0119] The magnet includes a pair of magnets, specifically, a magnet 61b (north pole) and a magnet 61c (south pole).

[0120] The upper ends of the magnets 61b and 61c are connected to a support plate 61e. The support plate 61e is connected to the underside of the upper plate 61f. That is, the magnets 61b and 61c according to this embodiment are connected to the upper plate 61f via the support plate 61e. The first pressing device 60a may also be configured without the support plate 61e. In this case, the magnets 61b and 61c may be directly connected to the upper plate 61f.

[0121] As an example, the magnet 61b according to this embodiment is cylindrical and is disposed outside (on the outer periphery of) the coil 61a with a space between it and the coil 61a. Alternatively, the magnet 61b may be a bar-shaped magnet extending in the vertical direction. In this case, for example, the electromagnetic actuator 61 may include a plurality of magnets 61b, and these magnets 61b may be disposed outside the coil 61a with a space between them.

[0122] The magnet 61c according to this embodiment has a cylindrical shape, for example. The magnet 61c is disposed inside the coil 61a, specifically, inside the coil core 61d around which the coil 61a is wound. A magnetic field (B1) is formed between the magnets 61b and 61c, oriented from the magnet 61b toward the magnet 61c. The coil 61a is disposed inside this magnetic field (B1).

[0123] The upper plate 61f and the lower plate 61g are connected to each other via a spring 61h. This allows the distance (vertical distance) between the upper plate 61f and the lower plate 61g to change. The spring 61h according to this embodiment is disposed outside (on the outer periphery of) the magnet 61b.

[0124] 7, the lower plate 61g according to this embodiment is connected via a load cell 112 to the first head rotation device 50a (specifically, the housing portion of the first head rotation device 50a).

[0125] 8, when a current (I) is supplied to the coil 61a of the electromagnetic actuator 61, according to Fleming's left-hand rule, the coil core 61d receives a downward electromagnetic force (F1). As a result, the lower plate 61g connected to the coil core 61d also receives a downward force (F1). The force (F1) received by the lower plate 61g is transmitted to the first head 30a via the head rotation shaft 51a, thereby applying a pressing force to the first head 30a.

[0126] With the mechanism described above, the first pressing device 60a according to this embodiment applies a pressing force to the first head 30a. The second pressing device 65a, the third pressing device 60b, and the fourth pressing device 65b according to this embodiment are configured similarly to the first pressing device 60a. That is, the second pressing device 65a, the third pressing device 60b, and the fourth pressing device 65b according to this embodiment also include an electromagnetic actuator 61, and are configured to apply a pressing force to the head by utilizing the electromagnetic force generated by this electromagnetic actuator 61.

[0127] Here, instead of the electromagnetic actuator 61, it is also possible to use a known pressing mechanism such as an air cylinder or a ball screw as the pressing device. However, in the case of an air cylinder, for example, in order to generate a predetermined pressing force, it is necessary to increase the internal pressure of the air cylinder by controlling a pressure control device such as a regulator, so it takes a certain amount of time to generate the predetermined pressing force. In addition, in the case of a ball screw, it is necessary for the ball screw to rotate a certain number of times in order to generate the predetermined pressing force, so it takes a certain amount of time to generate the predetermined pressing force. Therefore, it is difficult for pressing mechanisms such as an air cylinder or a ball screw to quickly apply a pressing force.

[0128] In contrast to this, according to this embodiment, the pressing device is provided with the electromagnetic actuator 61, and therefore it is possible to apply a pressing force to the head more quickly compared to when the pressing device is provided with a pressing mechanism such as an air cylinder or a ball screw instead of the electromagnetic actuator 61. In other words, according to this embodiment, it is possible to improve the responsiveness of the application of pressing force.

[0129] Specifically, according to this embodiment, by passing a current through the coil 61a of the electromagnetic actuator 61, a pressing force can be quickly applied to the head. Furthermore, by changing the value of the current flowing through the coil 61a, the pressing force applied to the head can be quickly changed. Specifically, by increasing the value of the current flowing through the coil 61a, the pressing force applied to the head can be quickly increased, and by decreasing the value of the current flowing through the coil 61a, the pressing force applied to the head can be quickly decreased.

[0130] As a result, according to this embodiment, for example, a high pressure can be applied quickly to a thick portion of the substrate Wf, and as a result, the substrate Wf can be processed in a short time.

[0131] Next, a modification of the above-described embodiment will be described below.

[0132] (Variation 1) Fig. 9 is a schematic diagram for explaining the processing device 1 according to Modification 1 of the embodiment. Specifically, Fig. 9 schematically illustrates the swinging of multiple heads in the processing device 1 according to this modification, similar to Fig. 2 described above.

[0133] The processing apparatus 1 according to this modified example shown in Fig. 9 differs from the embodiment shown in Fig. 2 in that the oscillation shaft 72a of the first oscillation device 70a is disposed near the second central axis XL2, and the oscillation shaft 82b of the fourth oscillation device 80b is disposed near the second central axis XL2. The other configurations of the processing apparatus 1 according to this modified example are the same as those of the processing apparatus 1 according to the previously described embodiment. This modified example can also achieve the same effects as those of the previously described embodiment.

[0134] (Variation 2) Fig. 10 is a schematic diagram for explaining the processing device 1 according to Modification 2 of the embodiment. Specifically, Fig. 10 schematically illustrates the swinging of multiple heads in the processing device 1 according to this modification, similar to Fig. 2 described above.

[0135] The processing apparatus 1 according to this modification shown in FIG. 10 does not include a third head 30b, a fourth head 40b, or a rocking device for rocking them. Furthermore, in the processing apparatus 1 according to this modification, the rocking shaft 82a of the second rocking device 80a is disposed in one of the two regions defined by the second central axis XL2 (the region closer to the X-direction than the second central axis XL2) and in the other of the two regions defined by the first central axis XL1 (the region closer to the Y-direction than the first central axis XL1). In these respects, this modification differs from the embodiment shown in FIG. 2. The remaining configuration of the processing apparatus 1 according to this modification is the same as that of the processing apparatus 1 according to the previously described embodiment. This modification also achieves the same effects as the previously described embodiment.

[0136] Although the embodiments and modifications of the present invention have been described in detail above, the present invention is not limited to such specific embodiments and modifications, and various modifications and alterations are possible within the scope of the present invention as defined in the claims. [Explanation of symbols]

[0137] 1: Processing equipment 10: Table 10a:Top surface 11:Discharge port 20: Table rotation device 30a: 1st head 33: Buffer plate 34: Base plate 38: Holder plate 40a: 2nd head 43: Buffer plate 44: Base plate 48: Holder plate 61: Electromagnetic actuator 70a: First rocking device 72a: Oscillating shaft 80a: Second rocking device 82a: Oscillating shaft 100: Control device Pd1: First treatment pad Pd2: Second treatment pad RM: outer region Wf: Substrate Wfa: Treated surface XL1: 1st center axis XL2: 2nd center axis

Claims

1. A processing apparatus configured to perform a polishing process as a predetermined process on a substrate, a table configured to hold the substrate such that the surface to be processed of the substrate faces upward; a table rotation device configured to rotate the table; a plurality of heads, each of which is attached with a processing pad having an area smaller than an area of ​​the surface to be processed of the substrate, and the plurality of heads are configured to bring the processing pad into contact with the surface to be processed of the substrate; a plurality of head rotation devices, each of the plurality of head rotation devices configured to rotate a respective one of the plurality of heads; a plurality of pressing devices, each of the plurality of pressing devices having an electromagnetic actuator configured to apply a pressing force to each of the plurality of heads using electromagnetic force; a plurality of oscillating devices, each of the plurality of oscillating devices configured to oscillate a respective one of the plurality of heads.

2. 2. The processing apparatus of claim 1, wherein each of the plurality of heads comprises: a holder plate to which the processing pad is attached; a base plate positioned above the holder plate; and a rubber buffer plate positioned between the holder plate and the base plate.

3. 2. The processing apparatus according to claim 1, wherein a plurality of discharge ports configured to discharge liquid toward the underside of the substrate placed on the upper surface are provided in an outer edge region, which is a region extending a predetermined distance from the outer edge of the upper surface of the table toward the center of the upper surface.

4. the plurality of heads include a first head to which a first processing pad is attached and a second head to which a second processing pad is attached; the plurality of rocking devices include a first rocking device configured to rock the first head and a second rocking device configured to rock the second head, the first swinging device includes a first swinging shaft and is configured to swing the first head around the first swinging shaft; the second swinging device includes a second swinging shaft and is configured to swing the first head around the second swinging shaft; The processing apparatus according to claim 1 , wherein the first and second swing axes are disposed in an area outside the table in a top view.

5. When a first central axis passing through the center of the table in the top view and a second central axis passing through the center and perpendicular to the first central axis are assumed, the first oscillation shaft and the second oscillation shaft are disposed in one of two regions defined by the first central axis line, 5. The processing device according to claim 4, wherein the first oscillation shaft is disposed in one of two regions defined by the second central axis line, and the second oscillation shaft is disposed in the other of the two regions defined by the second central axis line.

Images