Semiconductor light emitting device

Abstract

To suppress reduction in optical output of a semiconductor light-emitting device.SOLUTION: The semiconductor light-emitting device 10 includes a package substrate 14, an anode electrode 24 and a cathode electrode 26 bonded to the package substrate 14, a semiconductor layer 22 on the anode electrode 24 and the cathode electrode 26, and a semiconductor light-emitting element 12 including a light-transmitting substrate 20 on the semiconductor layer 22, and a covering member 16 that is in contact with the package substrate 14, in contact with a side surface 20c of the light-transmitting substrate 20, in contact with an outer edge 20d of an upper surface 20a of the light-transmitting substrate 20, has a light-transmitting property at an emission wavelength of the semiconductor light-emitting element 12, has a lower refractive index than the light-transmitting substrate 20, and has an opening 18 exposing the upper surface 20a of the light-transmitting substrate 20. At least a portion of the covering member 16 that is in contact with the outer edge 20a of the 20d of the upper surface of the light-transmissive substrate 20 is liquid at the operating temperature of the light-emitting elements 12.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a semiconductor light emitting device. [Background technology]

[0002] BACKGROUND ART A semiconductor light emitting device is known in which a semiconductor light emitting element bonded onto a package substrate is sealed with silicone resin (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-17427 Summary of the Invention [Problem to be solved by the invention]

[0004] When cracks occur due to deterioration of the silicone resin, the light output decreases.

[0005] The present invention has been made in view of the above-mentioned problems, and has an object to provide a technique for suppressing the decrease in the optical output of a semiconductor light-emitting device. [Means for solving the problem]

[0006] A semiconductor light emitting device according to one embodiment of the present invention includes a package substrate, a semiconductor light emitting element having an anode electrode and a cathode electrode bonded to the package substrate, a semiconductor layer on the anode electrode and the cathode electrode, and a light-transmitting substrate on the semiconductor layer, and a covering member in contact with the package substrate, a side surface of the light-transmitting substrate, and an outer edge of the upper surface of the light-transmitting substrate, the covering member being light-transmitting at the emission wavelength of the semiconductor light emitting element, having a refractive index lower than that of the light-transmitting substrate, and having an opening exposing the upper surface of the light-transmitting substrate, wherein at least the portion of the covering member in contact with the outer edge of the upper surface of the light-transmitting substrate is liquid at the operating temperature of the semiconductor light emitting element. [Effects of the Invention]

[0007] According to the present invention, it is possible to suppress a decrease in the optical output of a semiconductor light emitting device. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view schematically illustrating a configuration of a semiconductor light emitting device according to a first embodiment. [Figure 2] 1 is a top view schematically illustrating a configuration of a semiconductor light emitting device according to a first embodiment. [Figure 3] 4 is a flowchart illustrating an example of a method for manufacturing the semiconductor light emitting device according to the first embodiment. [Figure 4] FIG. 10 is a cross-sectional view schematically illustrating the configuration of a semiconductor light-emitting device according to a second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the description, the same elements are designated by the same reference numerals, and redundant explanations will be omitted as appropriate. To facilitate understanding of the description, the dimensional ratios of the components in each drawing do not necessarily correspond to the dimensional ratios of the actual light-emitting element.

[0010] (First embodiment) 1 is a cross-sectional view schematically showing the configuration of a semiconductor light emitting device 10 according to the first embodiment. The semiconductor light emitting device 10 includes a semiconductor light emitting element 12, a package substrate 14, and a covering member 16.

[0011] The semiconductor light emitting element 12 is a semiconductor light emitting element configured to emit ultraviolet light with a center wavelength λ of approximately 360 nm or less. To output ultraviolet light of such a wavelength, an aluminum gallium nitride (AlGaN)-based semiconductor material with a band gap of approximately 3.4 eV or more is used. In this embodiment, a DUV-LED (Deep Ultraviolet-Light Emitting Diode) chip that emits deep ultraviolet light with a peak emission wavelength λ of 240 nm or more and 320 nm or less is particularly shown.

[0012] The semiconductor light-emitting element 12 includes a translucent substrate 20, a semiconductor layer 22, an anode electrode 24, a cathode electrode 26, and a protective layer 28.

[0013] The translucent substrate 20 is made of a material that is translucent to the ultraviolet light emitted by the semiconductor light-emitting element 12. The light emitted by the semiconductor layer 22 is output from the translucent substrate 20 to the outside of the semiconductor light-emitting element 12. The translucent substrate 20 is, for example, made of sapphire (Al2O3). The translucent substrate 20 has an upper surface 20a, a lower surface 20b, and a side surface 20c. The upper surface 20a and the lower surface 20b are, for example, rectangular. The sizes of the upper surface 20a and the lower surface 20b are not particularly limited, but are, for example, 1 mm square. The thickness of the translucent substrate 20 from the upper surface 20a to the lower surface 20b is, for example, 100 μm or more, 200 μm or more, or 300 μm or more, and is, for example, 1000 μm or less, 700 μm or less, or 500 μm or less.

[0014] The semiconductor layer 22 is provided under the translucent substrate 20 and is provided on the lower surface 20b of the translucent substrate 20. The semiconductor layer 22 includes, for example, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The semiconductor layer 22 is made of an AlGaN-based semiconductor material. The AlGaN-based semiconductor material can be represented by the composition of In 1-x-y Al x Ga y N (0 < x + y ≤ 1, 0 < x < 1, 0 < y < 1). The semiconductor layer 22 is covered by the protective layer 28.

[0015] The anode electrode 24 includes a first contact electrode 24a and a first pad electrode 24b. The first contact electrode 24a is an internal electrode that contacts the semiconductor layer 22 and contacts a p-type semiconductor layer included in the semiconductor layer 22. The first contact electrode 24a is made of a metal layer such as Rh. The first contact electrode 24a is covered with a protective layer 28. The first pad electrode 24b is an external electrode that is exposed to the outside of the protective layer 28 and is electrically connected to the first contact electrode 24a through an opening provided in the protective layer 28. The first pad electrode 24b is made of a metal layer such as Ni / Au.

[0016] The cathode electrode 26 includes a second contact electrode 26a and a second pad electrode 26b. The second contact electrode 26a is an internal electrode that contacts the semiconductor layer 22 and contacts an n-type semiconductor layer included in the semiconductor layer 22. The second contact electrode 26a is made of a metal layer such as Ti / Al. The second contact electrode 26a is covered with a protective layer 28. The second pad electrode 26b is an external electrode that is exposed to the outside of the protective layer 28 and is electrically connected to the second contact electrode 26a through an opening provided in the protective layer 28. The second pad electrode 26b is made of a metal layer such as Ni / Au.

[0017] The protective layer 28 covers the semiconductor layer 22, the first contact electrode 24a, and the second contact electrode 26a. The protective layer 28 is made of a dielectric material such as an oxide or a nitride, for example, silicon oxide (SiO2), aluminum oxide (Al2O3), silicon nitride (SiN), etc. The protective layer 28 may be made of a stack of multiple protective layers made of different materials.

[0018] The package substrate 14 has a flat plate shape and includes a bonding surface 14a and a back surface 14b. The package substrate 14 includes a first bonding electrode 30 and a second bonding electrode 32 provided on the bonding surface 14a. The package substrate 14 includes a first mounting electrode 34 and a second mounting electrode 36 provided on the back surface 14b. The first bonding electrode 30 is electrically connected to the first mounting electrode 34 inside the package substrate 14. The second bonding electrode 32 is electrically connected to the second mounting electrode 36 inside the package substrate 14. The package substrate 14 is made of, for example, an inorganic material, such as a ceramic material such as alumina (Al2O3), aluminum nitride (AlN), silicon nitride (SiN), or silicon carbide (SiC).

[0019] The semiconductor light emitting element 12 is flip-chip bonded onto the package substrate 14. The semiconductor light emitting element 12 is bonded to a first bonding electrode 30 and a second bonding electrode 32. The semiconductor light emitting element 12 is bonded to the package substrate 14 via a first bonding portion 38 and a second bonding portion 40. The first bonding portion 38 is provided between the anode electrode 24 (first pad electrode 24b) and the first bonding electrode 30, and electrically connects the anode electrode 24 and the first bonding electrode 30. The second bonding portion 40 is provided between the cathode electrode 26 (second pad electrode 26b) and the second bonding electrode 32, and electrically connects the cathode electrode 26 and the second bonding electrode 32.

[0020] The first bonding portion 38 and the second bonding portion 40 are, for example, stud bumps. The first bonding portion 38 and the second bonding portion 40 are formed, for example, by melting the tip of a metal wire such as Au to form a ball and pressing the ball against the first bonding electrode 30 and the second bonding electrode 32. The first bonding portion 38 and the second bonding portion 40 formed on the first bonding electrode 30 and the second bonding electrode 32 are bonded to the anode electrode 24 (first pad electrode 24b) and the cathode electrode 26 (second pad electrode 26b), respectively, by, for example, ultrasonic bonding.

[0021] The covering member 16 covers the semiconductor light emitting element 12 on the package substrate 14. The covering member 16 contacts the bonding surface 14a of the package substrate 14. The covering member 16 contacts the side surface 20c of the light-transmitting substrate 20. The covering member 16 contacts the outer edge 20d of the top surface 20a of the light-transmitting substrate 20. The covering member 16 has an opening 18 that exposes the top surface 20a of the light-transmitting substrate 20.

[0022] The covering member 16 is translucent at the emission wavelength of the semiconductor light emitting element 12. The covering member 16 has an internal transmittance of 50% or more at the peak emission wavelength of the semiconductor light emitting element 12, and preferably 70% or more, 80% or more, or 90% or more. The covering member 16 is made of, for example, a silicone-based resin. The covering member 16 is configured so as not to contain a phosphor.

[0023] The covering member 16 includes a first covering portion 16a and a second covering portion 16b. The first covering portion 16a contacts the bonding surface 14a of the package substrate 14 and the side surface 20c of the light-transmitting substrate 20. The first covering portion 16a may contact the anode electrode 24, the cathode electrode 26, the protective layer 28, the first bonding electrode 30, the second bonding electrode 32, the first bonding portion 38, and the second bonding portion 40. The first covering portion 16a is configured so that its height from the bonding surface 14a of the package substrate 14 decreases with increasing distance from the semiconductor light-emitting device 12. The first covering portion 16a is configured so as not to contact the upper surface 20a of the light-transmitting substrate 20.

[0024] The second covering portion 16b is provided on the first covering portion 16a and covers the first covering portion 16a. The second covering portion 16b may contact the bonding surface 14a of the package substrate 14 at the outer periphery of the first covering portion 16a. The second covering portion 16b may cover the entire first covering portion 16a so that the first covering portion 16a is not exposed to the outside.

[0025] The second covering portion 16b contacts the outer edge 20d of the upper surface 20a of the light-transmitting substrate 20. The second covering portion 16b has an outer edge covering portion 16c that covers the outer edge 20d of the upper surface 20a of the light-transmitting substrate 20. The outer edge covering portion 16c contacts the upper surface 20a of the light-transmitting substrate 20. The outer edge covering portion 16c defines an opening 18 that exposes the upper surface 20a of the light-transmitting substrate 20.

[0026] The outer edge covering portion 16c is provided in the shape of a rectangular frame along the outer edge 20d of the upper surface 20a of the light-transmitting substrate 20. The width w of the overlap between the upper surface 20a of the light-transmitting substrate 20 and the outer edge covering portion 16c is not particularly limited, but is, for example, 1 μm or more, 5 μm or more, or 10 μm or more, and is, for example, 200 μm or less, 100 μm or less, or 50 μm or less. The height h of the outer edge covering portion 16c relative to the upper surface 20a of the light-transmitting substrate 20 is not particularly limited, but is, for example, 1 μm or more, 5 μm or more, or 10 μm or more, and is, for example, 200 μm or less, 100 μm or less, or 50 μm or less.

[0027] The first covering portion 16a is solid at the operating temperature (for example, −10° C. or higher and 85° C. or lower) of the semiconductor light emitting element 12. The first covering portion 16a is made of a thermosetting or thermoplastic resin (for example, a silicone-based resin).

[0028] The second covering portion 16b is liquid at the operating temperature of the semiconductor light emitting element 12 (for example, -10°C or higher and 85°C or lower). The second covering portion 16b includes a non-curable resin (for example, a silicone-based resin), for example, an uncured resin. Here, "uncured" may mean a state before a curing reaction that forms crosslinks between polymers occurs, or may mean that the resin does not have a crosslinked structure. The silicone-based resin that does not have a crosslinked portion may be a linear silicone oil or silicone rubber, or may be a silicone resin with a branched or network structure. The second covering portion 16b may further include a solvent. The second covering portion 16b may include an organic solvent such as an alcohol, ketone, ester, ether, or hydrocarbon solvent.

[0029] The second covering portion 16b may contain the same resin material as the first covering portion 16a, such as a silicone-based resin. For example, if the first covering portion 16a is a two-component thermosetting silicone-based resin in which a base agent and a curing agent are mixed, the second covering portion 16b may be a silicone-based resin that contains the base agent used in the first covering portion 16a but does not contain a curing agent. By using the same silicone-based resin for the first covering portion 16a and the second covering portion 16b, the sealing properties and adhesion of the second covering portion 16b to the first covering portion 16a can be improved.

[0030] The viscosity of the second covering portion 16b is, for example, 1 Pa·s or more, 5 Pa·s or more, or 10 Pa·s or more, and, for example, 1000 Pa·s or less, 100 Pa·s or less, or 50 Pa·s or less. The viscosity of the material itself allows the second covering portion 16b to maintain its adhesion to the surface of the first covering portion 16a and the outer edge 20d of the upper surface 20a of the light-transmitting substrate 20. The thickness of the second covering portion 16b covering the covering member 16 is, for example, 1 μm or more, 5 μm or more, or 10 μm or more, and, for example, 200 μm or less, 100 μm or less, or 50 μm or less.

[0031] In this embodiment, the upper surface (the surface exposed to the outside) of the covering member 16 is liquid at the operating temperature of the semiconductor light emitting device 10. The portion of the covering member 16 that comes into contact with the side surface 20c of the light-transmitting substrate 20 is solid at the operating temperature of the semiconductor light emitting device 10.

[0032] 2 is a top view schematically illustrating the configuration of the semiconductor light emitting device 10 according to the first embodiment. The semiconductor light emitting device 10 further includes a protective element 50. The protective element 50 is a diode, such as a Zener diode, that protects the semiconductor light emitting element 12 from surge currents and static electricity. The protective element 50 is bonded to the bonding surface 14a of the package substrate 14. The protective element 50 is bonded to the first bonding electrode 30 and the second bonding electrode 32, for example, and is connected in parallel with the semiconductor light emitting element 12. The top surface 50a of the protective element 50 may be exposed to the outside without being covered by the covering member 16.

[0033] 3 is a flowchart showing an example of a method for manufacturing the semiconductor light emitting device 10 according to the first embodiment. First, the semiconductor light emitting element 12 is bonded onto the package substrate 14 (S10). Next, the package substrate 14 and the side surface 20c of the light-transmitting substrate 20 are covered with a thermosetting resin (S12). Next, the thermosetting resin covering the package substrate 14 and the side surface 20c of the light-transmitting substrate 20 is heated and cured to form the first covering portion 16a (S14). Next, the first covering portion 16a and the outer edge 20d of the upper surface 20a of the light-transmitting substrate 20 are covered with a non-curing resin to form the second covering portion 16b (S16).

[0034] 3 illustrates a case where a thermosetting resin is used as first covering portion 16a. When a thermoplastic resin is used as first covering portion 16a, instead of the process of S12, the package substrate 14 and the side surface 20c of light-transmitting substrate 20 can be covered with the thermoplastic resin softened by heating. Then, instead of the process of S14, the thermoplastic resin covering the package substrate 14 and the side surface 20c of light-transmitting substrate 20 can be cooled and hardened to form first covering portion 16a.

[0035] According to this embodiment, at least the portion of the covering member 16 covering the semiconductor light emitting element 12 that contacts the outer edge 20d of the upper surface 20a of the light-transmitting substrate 20 is liquid at the operating temperature of the semiconductor light emitting device 10. If the entire covering member 16 were made of a solid material, a large stress would be applied to the portion covering the outer edge 20d of the upper surface 20a of the light-transmitting substrate 20, making cracks more likely to occur. On the other hand, according to this embodiment, the outer edge 20d of the upper surface 20a of the light-transmitting substrate 20 is covered with a liquid material, thereby preventing cracks from occurring. This improves the reliability of the covering member 16 and suppresses a decrease in the light output of the semiconductor light emitting device 10 due to cracks. This improves the life and reliability of the semiconductor light emitting device 10.

[0036] (Second embodiment) 4 is a top view schematically illustrating the configuration of a semiconductor light emitting device 10A according to the second embodiment. The semiconductor light emitting device 10A differs from the first embodiment in that it includes a covering member 46 instead of the covering member 16. The following description of the second embodiment will focus on the differences from the first embodiment, and will omit a description of the commonalities as appropriate.

[0037] The semiconductor light emitting device 10A includes a semiconductor light emitting element 12, a package substrate 14, and a covering member 46. The semiconductor light emitting element 12 and the package substrate 14 can be configured similarly to those in the first embodiment. The covering member 46 differs from the covering member 16 in the first embodiment in that the entire covering member 46 is made of a material that becomes liquid at the operating temperature of the semiconductor light emitting device 10.

[0038] The covering member 46 covers the semiconductor light emitting element 12 on the package substrate 14. The covering member 46 contacts the bonding surface 14a of the package substrate 14. The covering member 46 contacts the side surface 20c of the light-transmitting substrate 20. The covering member 46 may also contact the anode electrode 24, the cathode electrode 26, the protective layer 28, the first bonding electrode 30, the second bonding electrode 32, the first bonding portion 38, and the second bonding portion 40. The covering member 46 contacts the outer edge 20d of the upper surface 20a of the light-transmitting substrate 20. The covering member 46 has an outer edge covering portion 46c. The covering member 46 has an opening 18 that exposes the upper surface 20a of the light-transmitting substrate 20. The entire covering member 46 can be made of a liquid material similar to the second covering portion 16b according to the first embodiment.

[0039] The covering member 46 has an outer edge covering portion 46c that covers the outer edge 20d of the upper surface 20a of the light-transmitting substrate 20. The outer edge covering portion 46c can be configured in the same manner as the outer edge covering portion 16c according to the second embodiment.

[0040] In this embodiment, the upper surface (the surface exposed to the outside) of the covering member 46 is liquid at the operating temperature of the semiconductor light emitting device 10. The portion of the covering member 46 that comes into contact with the side surface 20c of the light-transmitting substrate 20 is liquid at the operating temperature of the semiconductor light emitting device 10.

[0041] In this embodiment, at least the portion of the covering member 46 that covers the semiconductor light emitting element 12 that contacts the outer edge 20d of the upper surface 20a of the light-transmitting substrate 20 is liquid at the operating temperature of the semiconductor light emitting device 10. By covering the outer edge 20d of the upper surface 20a of the light-transmitting substrate 20, which is prone to large stress, with a liquid material, it is possible to prevent cracks from occurring. This improves the reliability of the covering member 16 and suppresses a decrease in the light output of the semiconductor light emitting device 10 that would otherwise be caused by cracks. This improves the life and reliability of the semiconductor light emitting device 10.

[0042] The present invention has been described above based on the embodiments. It will be understood by those skilled in the art that the present invention is not limited to the above-described embodiments, and that various design changes and modifications are possible, and that such modifications are also within the scope of the present invention.

[0043] Several aspects of the present invention will now be described.

[0044] A first aspect of the present invention is a semiconductor light-emitting device including a package substrate, an anode electrode and a cathode electrode bonded to the package substrate, a semiconductor layer on the anode electrode and the cathode electrode, and a light-transmitting substrate on the semiconductor layer, and a covering member in contact with the package substrate, a side surface of the light-transmitting substrate, and an outer edge of the top surface of the light-transmitting substrate, the covering member being transparent to light at the emission wavelength of the semiconductor light-emitting element, having a lower refractive index than the light-transmitting substrate, and having an opening exposing the top surface of the light-transmitting substrate, wherein at least the portion of the covering member in contact with the outer edge of the top surface of the light-transmitting substrate is liquid at the operating temperature of the semiconductor light-emitting element. According to the first aspect, by covering the outer edge 20d of the top surface 20a of the light-transmitting substrate 20, which is prone to large stress, with a liquid material, cracks can be prevented from occurring in the covering member, and a decrease in the light output of the semiconductor light-emitting device due to cracks can be suppressed.

[0045] A second aspect of the present invention is the semiconductor light emitting device according to the first aspect, wherein the surface of the covering member is liquid at the operating temperature of the semiconductor light emitting device. According to the second aspect, by making the surface of the covering member a liquid material, it is possible to prevent cracks from occurring on the surface of the covering member and suppress a decrease in the light output of the semiconductor light emitting device due to the occurrence of cracks.

[0046] In a third aspect of the present invention, in the semiconductor light emitting device according to the first or second aspect, the portion of the covering member that contacts the side surface of the light-transmitting substrate is solid at the operating temperature of the semiconductor light emitting element. According to the third aspect, by covering the side surface of the light-transmitting substrate with a solid material, the sealing performance of the covering member can be improved.

[0047] A fourth aspect of the present invention is the semiconductor light emitting device according to the third aspect, wherein the solid portion of the covering member includes a thermosetting silicone resin. According to the fourth aspect, by using the thermosetting silicone resin, the sealing performance of the semiconductor light emitting element can be improved.

[0048] A fifth aspect of the present invention is the semiconductor light-emitting device according to the third aspect, wherein the solid portion of the covering member contains a thermoplastic silicone resin. According to the fifth aspect, by using a thermoplastic silicone resin, it is possible to improve the sealing performance of the semiconductor light-emitting element.

[0049] A sixth aspect of the present invention is the semiconductor light-emitting device according to the first or second aspect, wherein the portion of the covering member that contacts the side surface of the light-transmitting substrate is liquid at the operating temperature of the semiconductor light-emitting element. According to the sixth aspect, by covering the side surface of the light-transmitting substrate with a liquid material, it is possible to prevent cracks from occurring in the portion covering the side surface.

[0050] A seventh aspect of the present invention is the semiconductor light emitting device according to any one of the first to sixth aspects, wherein the liquid portion of the covering member contains an uncured silicone resin. According to the seventh aspect, by using an uncured silicone resin as the liquid portion of the covering member, it is possible to improve the sealing performance of the semiconductor light emitting element.

[0051] An eighth aspect of the present invention is the semiconductor light-emitting device according to any one of the first to sixth aspects, wherein the liquid portion of the covering member contains a silicone-based resin and a solvent. According to the eighth aspect, by using a mixture of a silicone-based resin and a solvent as the liquid portion of the covering member, the sealing performance of the semiconductor light-emitting element can be improved.

[0052] A ninth aspect of the present invention is the semiconductor light-emitting device according to any one of the first to eighth aspects, wherein the viscosity of the liquid portion of the covering member is 1 Pa·s or more and 1000 Pa·s or less. According to the ninth aspect, by setting the viscosity of the liquid portion of the covering member to a predetermined value, the liquid portion can be maintained in an adhered state. [Explanation of symbols]

[0053] 10...semiconductor light emitting device, 12...semiconductor light emitting element, 14...package substrate, 16...covering member, 16a...first covering portion, 16b...second covering portion, 16c...outer edge covering portion, 18...opening.

Claims

1. A package substrate; a semiconductor light emitting element having an anode electrode and a cathode electrode bonded to the package substrate, a semiconductor layer on the anode electrode and the cathode electrode, and a light-transmitting substrate on the semiconductor layer; a covering member in contact with the package substrate, in contact with a side surface of the light-transmitting substrate, and in contact with an outer edge of the top surface of the light-transmitting substrate, the covering member having light-transmitting properties at an emission wavelength of the semiconductor light-emitting element, a refractive index lower than that of the light-transmitting substrate, and having an opening that exposes the top surface of the light-transmitting substrate; At least a portion of the covering member that is in contact with an outer edge of the upper surface of the light-transmitting substrate is in a liquid state at an operating temperature of the semiconductor light-emitting element. Semiconductor light-emitting device.

2. the upper surface of the covering member is liquid at the operating temperature of the semiconductor light emitting element; The semiconductor light emitting device according to claim 1 .

3. a portion of the covering member in contact with the side surface of the light-transmitting substrate being solid at an operating temperature of the semiconductor light-emitting element; The semiconductor light emitting device according to claim 1 .

4. the solid portion of the covering member contains a thermosetting silicone resin. The semiconductor light emitting device according to claim 3 .

5. the solid portion of the covering member contains a thermoplastic silicone-based resin. The semiconductor light emitting device according to claim 3 .

6. a portion of the covering member in contact with the side surface of the light-transmitting substrate being in a liquid state at an operating temperature of the semiconductor light-emitting element; The semiconductor light emitting device according to claim 1 .

7. the liquid portion of the coating member contains an uncured silicone-based resin. The semiconductor light emitting device according to claim 1 .

8. the liquid portion of the coating member contains a silicone-based resin and a solvent. The semiconductor light emitting device according to claim 1 .

9. The viscosity of the liquid portion of the coating member is 1 Pa·s or more and 1000 Pa·s or less. The semiconductor light emitting device according to claim 1 .

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