Sputter deposition

Abstract

To provide a sputter deposition apparatus.SOLUTION: A sputter deposition apparatus (100) comprising a remote plasma generating arrangement (106) arranged to provide a plasma (120) for sputter depositing a target material (102) in a sputter deposition region (112), a confining arrangement arranged to provide a confining magnetic field to substantially confine the plasma to the sputter deposition region, a substrate (104) provided in the sputter deposition region, and one or more target support assemblies (108) arranged to support one or more targets in the sputter deposition region to effect sputter deposition of the target material on the substrate, wherein the confinement arrangement confines the remote plasma to the target support assembly such that, in use, target material is deposited as a first region on the substrate, target material is deposited as a second region on the substrate, and an intermediate region between the first region and the second region is free of target material. 2.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to deposition, and more particularly to sputtering a target material onto a substrate. The present invention relates to a method and apparatus for depositing silicon dioxide. [Background technology]

[0002] Deposition is a process in which a target material is deposited on a substrate. An example of deposition is the deposition of a thin film ( Usually, it is about a nanometer or a fraction of a nanometer to a few micrometers or several micrometers. Thin film deposition, in which a thickness of up to 10 micrometers is deposited on a substrate such as a silicon wafer or web. Examples of thin film deposition techniques include evaporation of a target material in a condensed phase to produce a vapor. and physical vapor deposition (PVD), in which a metal is deposited on the substrate surface and then condensed onto the substrate. , a spat in which particles are ejected from a target due to bombardment by energetic particles such as ions. In the example of sputter deposition, the sputter gas is an inert gas such as argon. is introduced into a vacuum chamber at low pressure and uses energetic electrons to generate plasma. The sputtering gas is ionized. The plasma ions bombard the target, causing the target to The target material is then ejected and can be deposited on the substrate surface. Deposition can be achieved by depositing target material without heating the target material, resulting in This method is advantageous over other thin film deposition methods such as evaporation in that it reduces or prevents damage to the substrate caused by heat. It is more advantageous.

[0003] In some cases, a pattern of material is applied to the surface of the substrate rather than coating the entire surface. To create such a pattern, it is sometimes desirable to deposit a mask. It is known to use a coating agent to protect areas of the surface that are to remain uncoated. In such cases, in the unmasked area (not protected by the mask), In the masked areas, the material is deposited on the substrate. The mask is deposited on the substrate (rather than on the substrate itself).

[0004] Mask-based deposition can be wasteful as the material deposited on the mask is discarded. Furthermore, it may be necessary to periodically stop deposition to clean the mask. may reduce the deposition efficiency. Summary of the Invention

[0005] According to a first aspect of the present invention, there is provided a sputter deposition apparatus comprising: A plasma is formed in the sputter deposition region to provide a plasma for sputter depositing a target material. a remote plasma generating array arranged as follows: configured to provide a confining magnetic field that substantially confines the plasma to the sputter deposition region. a confinement array; a substrate provided within a sputter deposition region; one or more sputter deposition zones for effecting sputter deposition of target material onto a substrate; one or more target support assemblies arranged to support the target; , During use, depositing a target material onto a substrate as a first region; depositing a target material onto the substrate as a second region; The confinement arrangement is such that there is no target material in the intermediate region between the first and second regions. The array confines the remote plasma to the target support assembly.

[0006] Such an apparatus would allow for the formation of specific patterns of regions or stripes on a substrate, for example. Instead of using other elements such as a mask, one or more target materials are applied to the substrate. The positioning of the material can form patterns, allowing for more efficient deposition of areas such as stripes of material. For example, such deposition may be performed to clean parts of the apparatus, such as masks. Can be performed continuously or with fewer interruptions to operations than other processes that may be interrupted Additionally, materials may be deposited on a substrate and then removed by other methods or by removing the substrate without the material remaining. The deposited material is much smaller than in other methods where the target material is deposited on a mask in the plate area. The amount of loss can be reduced.

[0007] In some examples, a conveyor system conveys the sputter from a first side of the sputter deposition area. a sputter deposition region configured to transport the substrate to a second side of the sputter deposition region; A support assembly is arranged to support at least the first target. a get support assembly and a second target support member positioned to support at least a second target; In such an example, the first target support assembly in the sputter deposition region A gap extending from the first side of the first target support to the second side of the sputter deposition region. This is for example the case in deposition. , creating a corresponding gap in a portion of the substrate. This is a simple and efficient way to This allows for the formation of stripes.

[0008] In these examples, the gap may be elongated along the conveying direction, and the first target The support assembly may be elongated along the conveying direction and / or may include a second target support. The support assembly may be elongated along the conveying direction. For example, this arrangement may be more , forming a more uniform pattern of deposited target material on the substrate.

[0009] In some examples, a conveyor system moves the conveyor from a first position in the deposition area to a second position in the deposition area. a deposition region having one or more target supports disposed thereon, the one or more target supports being disposed to convey the substrate through the deposition region to a second position; a support assembly at a first position, the support assembly being configured to detect deposition on the second portion by the first target; and the second part at the second position so as not to be caused by the second target. Deposition on the target is due to the second target and not the first target. In this way, the first target and the second target are supported. to separate two stripes containing material from two different targets in a clean and efficient manner. can be deposited on the substrate.

[0010] In some instances, the transport direction is substantially in the plane of the sputter deposition region, but the transport direction is One or more targets are positioned so that the second target is offset from the first target along an axis perpendicular to the direction of transport. The upper target support assembly is configured to support the first target and the second target. For example, this is the degree of deviation of the second target relative to the first target. This allows for a variety of different patterns of deposited target material to be formed on the substrate. This makes it possible.

[0011] In those instances where the axis is the first axis, one or more target support assemblies may be The second target is offset from the first target along the transport direction within the target deposition region. For example, the first target and the second target may be arranged to support the first and second targets. provides additional flexibility for depositing stripes of material onto a substrate according to a desired pattern. Drop.

[0012] In some examples, at least one of the first target and the second target One or more target support assemblies support the first target at an oblique angle to the conveying direction. The target material is arranged to support the first target and the second target. For example, a portion of the substrate may be may pass through a portion of one of the targets and then pass through a portion of another of the targets, e.g. For example, a combination of the materials of the first and second targets may be formed as stripes of mixed material on a substrate. A mixture can be deposited.

[0013] In some examples, the sputter deposition apparatus includes a first target associated with the first target. A second target magnetic element is provided in association with the get magnetic element and the second target. The first target magnetic element and the second target magnetic element have a bias for each target. may be considered to provide and control the magnetic field associated with the first target and the second target. For example, the first target and the second target can be adjacent to each other. Each confines the plasma.

[0014] In these examples, the sputter deposition apparatus performs sputter deposition of the material of the first target. The first magnetic field provided by the first target magnetic element and / or the second target magnetic element are controlled. a second target magnetic element provided by the second target magnetic element that controls sputter deposition of material on the target; The device may further comprise a controller arranged to control the magnetic field of the different By controlling the magnetic field relative to the target, the resulting difference in the target material The deposition of the material can be controlled, for example by depositing more material on some targets than on others.

[0015] In such a case, one or more target support assemblies may be attached to a first target magnetic field. a first target may be positioned to support the first target between the sensor element and the conveyor system; and and / or a second target supporting member between the second target magnetic element and the conveyor system. With this arrangement, contact with the plasma during sputter deposition can be prevented. The magnetic element is not contaminated by contact with the target material ejected from the target. , a bias for each target can be provided.

[0016] The material of the first target may be different from the material of the second target. This allows for greater flexibility in the use of sputter deposition equipment to create a variety of different deposition patterns on the substrate. bring about.

[0017] The plasma generating device may comprise one or more elongated antennas elongated along the conveying direction. For example, this allows for the generation of plasma that will fill the sputter deposition area to a sufficient extent. This allows for deposition of a desired pattern of target material on the substrate.

[0018] In such an example, the conveyor system may be configured to transport the substrate along a curved path. The one or more elongated antennas may be curved in the same direction as the curvature of the curved path. The plasma density may also be more uniform between the substrate and the target support assembly. This therefore improves the uniformity of the target material deposited on the substrate, for example.

[0019] The sputter deposition apparatus includes a confining magnetic field that substantially confines the plasma to a sputter deposition region. a confinement array arranged to provide a source of gas and cause sputter deposition of a target material. The confinement array may include at least one confinement magnetic element that is elongated along the transport direction. This improves the efficiency of the deposition process and directs the plasma outside the sputter deposition area. This reduces plasma loss due to leakage or other movement of the plasma.

[0020] In these examples, the containment array is elongated in a direction substantially perpendicular to the transport direction. The deposition process may further be performed using at least one confining magnetic element. This improves the plasma confinement within the sputter deposition region.

[0021] One or more target support assemblies are transported through the sputter deposition area by a conveyor system. While transporting the substrate by the one or more targets, without any intervening elements between the one or more targets and the substrate, The sputter deposition apparatus may be used in this manner. the substrate being substantially free of target material without the use of an intervening element such as a mask. The pattern of target material is deposited on the substrate containing the area of ​​the target material. Therefore, the deposition efficiency is improved. It can be improved.

[0022] The conveyor system may also include rollers arranged to convey the substrate in a conveying direction. Preferably, the conveying direction is substantially perpendicular to the rotation axis of the roller. The deposition equipment forms part of a roll-to-roll deposition system that is more efficient than a batch process, for example. It may be done.

[0023] The conveyor system may include a curved member, and the one or more target support assemblies may include: A curved member is arranged to support one or more targets that substantially follow the curvature of at least a portion of the curved member. The conveyor system transports the substrate, ensuring a smooth transition between the target and the substrate. This improves the uniformity of the target material deposited on the substrate because the distance can be more uniform. It can be raised.

[0024] At least one surface of the one or more targets facing the conveyor system is curved. This in turn may improve the uniformity of the target material deposited on the substrate.

[0025] According to a second aspect of the present invention, there is provided a method for sputter depositing a target material onto a substrate. The method includes providing a plasma in a sputter deposition region; depositing first stripes on a first portion of the substrate as the substrate is conveyed through the and depositing a second stripe on the portion of the target material having a different density than the first stripe. the second stripe and the second stripe are separated so as to include at least one target material of a different composition. The position of one or more targets relative to the deposition region causes sputtering of target material onto the substrate. conveying the substrate in a conveying direction through a sputter deposition region to cause deposition. As explained in relation to the first embodiment, this allows for more efficient deposition of stripes of material onto the substrate. This allows the system to be executed efficiently.

[0026] Transporting the substrate to a first portion of the sputter deposition region substantially overlapping the first target. conveying a first portion of the substrate within the region; and conveying a second portion of the substrate within a second region of the sputter deposition region that substantially overlaps the gap between the first and second sputter deposition regions; and depositing a substrate in a third region of the sputter deposition region substantially overlapping the second target. and conveying a third portion of the plate, which forms stripes on the substrate in a simple and efficient manner. This allows for the formation of patterns.

[0027] The method includes sputtering a first target material as first stripes onto a first portion of a substrate. and depositing the material of the second target as a third stripe onto a second portion of the substrate. sputter depositing the second stripes, the second stripes being of a lower density than the first stripes; and a second target material of lower density than that in the third stripe, or Alternatively, the second stripe is substantially free of the material of the first target and the material of the second target. At least one of the following is true.

[0028] Conveying the substrate includes conveying a first portion of the target having a first length along the conveying direction. conveying a first portion of the substrate within a first region of the sputter deposition region that substantially overlaps the and a spatula that substantially overlaps a second portion of the target having a second length along the conveying direction. and conveying a second portion of the substrate within a second region of the heater deposition region; Here, the first length is different from the second length. In this way, for example, a desired deposition pattern can be achieved. According to the method, target materials of different densities are deposited on a first portion of the substrate and a second portion of the substrate. It can be accumulated.

[0029] Transporting the substrate to a first portion of the sputter deposition region substantially overlapping the first target. conveying a second portion of the substrate within the region and subsequently placing the second portion substantially over the second target; and conveying a second portion of the substrate within a second region of the sputter deposition region comprising: Such an example may include depositing the material of the first target as a second stripe on a second portion of the substrate. The method may include sputter depositing a combination of the material from the first target and the material from the second target. In this way, the combination of the material of the first target and the material of the second target can be, for example, It can be deposited in a simple manner as a mixture.

[0030] The first target may be elongated along the conveying direction. The method involves substantially narrowing a portion of the plasma along the transport direction so that the portion of the plasma is elongated. Increasing the contact area between the plasma and the first target may include confining the plasma. By increasing the deposition rate, for example, this improves the efficiency of the deposition process.

[0031] In an example, the method includes generating a first magnetic field associated with the first target while transporting the substrate. and generating a second magnetic field relative to a second target, wherein the first magnetic field is different from the second magnetic field. By controlling the magnetic fields associated with different targets, the results and This allows for the control of the deposition of materials on different targets, e.g., more of a material on one target. Deposit in a small amount.

[0032] Further features of the invention will become apparent from the following description, given by way of example only, made with reference to the accompanying drawings, in which: will become clear. [Brief explanation of the drawings]

[0033] [Figure 1] FIG. 1 is a schematic diagram showing a cross-sectional view of an example device. [Figure 2] FIG. 2 is a schematic plan view of a portion of the example device of FIG. 1. [Figure 3] FIG. 3 is a schematic diagram showing a view of a portion of the example apparatus of FIGS. 1 and 2. [Figure 4] FIG. 4 is a schematic diagram showing a plan view of a further portion of the example apparatus of FIGS. 1 to 3. [Figure 5] 10 is a schematic diagram showing a plan view of a portion of an apparatus according to a further example; [Figure 6] 6 is a schematic diagram showing a plan view of a further portion of the example apparatus of FIG. 5. FIG. [Figure 7] FIG. 10 is a schematic diagram showing a plan view of a portion of yet another example apparatus. [Figure 8] 8 is a schematic diagram showing a plan view of a further portion of the example apparatus of FIG. 7. FIG. [Figure 9] FIG. 10 is a schematic diagram showing a plan view of a portion of yet another example of an apparatus. [Figure 10] 10 is a schematic diagram showing a plan view of a further portion of the example apparatus of FIG. 9. FIG. [Figure 11] 10 is a schematic diagram showing a cross-sectional view of a device according to a further example. [Figure 12] FIG. 12 is a schematic plan view of a portion of the example device of FIG. 11. DETAILED DESCRIPTION OF THE INVENTION

[0034] Details of the example apparatus and method will become apparent from the following description and the accompanying drawings. In the description, for purposes of explanation, numerous specific details of particular examples are set forth. References to "example" or similar terms mean that a particular feature, structure, or characteristic described in connection with the example is , means that it is included in at least one example, but not necessarily in the other examples. Furthermore, certain examples are provided in order to facilitate explanation and understanding of the concepts underlying the examples. It should be noted that certain features have been omitted and / or necessarily simplified in the following general description.

[0035] 1-4, an apparatus for sputter depositing a target material 102 onto a substrate 104 is shown. An example 100 is shown schematically. Such an apparatus 100 is called a sputter deposition apparatus. It is possible.

[0036] Wide range of industrial applications, e.g. optical coatings, magnetic recording media, electronic semiconductor devices energy generation devices such as LEDs and thin-film solar cells, and energy storage devices such as thin-film batteries Plasma-based sputter deposition has practical applications for thin film deposition, such as device manufacturing. Therefore, the subject matter of this disclosure may be used as an energy storage device. The apparatus 100 and methods described herein may be used in conjunction with the manufacture of the device 100 or parts thereof. It is to be understood that the method is not limited to their manufacture.

[0037] Although not shown in the figures for clarity, the device 100 may be provided in a housing, During use, the housing provides a low pressure suitable for sputter deposition, e.g., 3×10 -3 exhausted to torr For example, it should be understood that the housing may be pumped by a pump system (not shown). Apply an appropriate pressure (e.g., 1×10 -5 May be pumped to a pressure of less than 1 / 4 torr and filled with argon or nitrogen during use. The process gas or sputter gas, such as For example, 3 x 10 -3 torr) into the housing using a gas supply system (not shown). It may be introduced.

[0038] Returning to the example shown in FIGS. 1 to 4, in overview, the apparatus 100 comprises a plasma generating array 1 06, one or more target support assemblies 10 (which may be referred to as a target support system) 8 and a conveyor system 110.

[0039] A conveyor system 110 is configured to transport the substrate 104 through a sputter deposition area 112. The sputter deposition region 112 is arranged as follows: The sputter deposition area 104 is defined between the conveyor system 110. 0 and the target support assembly 108, in which, during use, Sputter deposition occurs from target material 102 to substrate 104. The sputter deposition region of FIG. Area 112 is shown with dashed lines on the left and right, the target support assembly 108 below, and the conveyor system above. 110. However, this is just an example.

[0040] In this case, the substrate 104 is a web of substrate, but in other examples the substrate may be of a different shape. For example, the substrate web may be a flexible substrate or otherwise bendable. Such substrates are suitable for example for roll-to-roll applications. Flexible enough to bend the substrate around rollers as part of the feeding system In the example of Figures 1 to 4, the substrate 104 is conveyed along a curved path by a conveyor system. The curved path is shown by arrow C in FIG. In such cases, the substrate may be relatively rigid or inflexible. The substrate can be passed through the conveyor system without bending the substrate or with little bending the substrate. The system may be transported by the

[0041] In some examples, the conveyor system 110 may include a curved member. In the drawing, the curved member is provided by a substantially cylindrical drum 114, such as a roller. However, in other examples the curved member may be provided by a different part. 14 may be considered to function as a substrate guide. The curved member may be provided by, for example, a mandrel. The shaft 116 may be arranged to rotate about an axis 116 that is connected to the longitudinal axis of the curved member. The conveyor system 110 may also coincide with the direction axis. The substrate 104 is then transferred to the drum 114 and onto the drum 115 so as to be carried by at least a portion of the surface. 1, the conveyor system 110 may be arranged to feed from the base A first roller 118a and a substrate 118b are arranged to feed the plate 104 onto the drum 114. After the substrate 104 passes through the sputter deposition region 112, the drum 114 is used to deliver the substrate 104. The conveyor system 110 includes a second roller 118b arranged as follows: The substrate 104 may be part of a "reel-to-reel" process arrangement, and may be a substrate web or other ) The substrate material is fed from a first reel or bobbin, passes through the apparatus 100, and then is fed to a second reel or bobbin. is fed onto a bobbin to form a stacked reel of the treated substrate web.

[0042] The conveyor system 110 transports the substrate 104 in a conveying direction indicated by arrow D in FIG. The conveying direction D corresponds to the general direction in which the substrate 104 moves through the apparatus 100. For example, the conveying direction D may be considered to be a portion of the substrate 104 as it enters the apparatus 100 and the mounting surface. This may be considered the direction between portions of the substrate 104 as it exits the station 100. If the drum 110 includes rollers (such as the drum 114), the conveying direction D is the maximum The direction of rotation of the roller can be taken at the tangent of the high point. The conveyor system 110 may be arranged to convey the substrate 104 in a conveying direction D, The direction D is substantially perpendicular to the rotation axis 116 of the roller (in this case, the drum 114). If the direction is perpendicular to the axis, or if it is perpendicular to the axis within the measurement tolerance, or if it is 5 degrees or A direction is said to be substantially perpendicular to an axis if it is perpendicular to the axis within a few degrees, such as within 10 degrees. The conveying direction D in Figure 1 is horizontal, but this is just an example.

[0043] In some examples, the substrate 104 may be silicon or a polymer, or may include silicon or polymer. In some instances, e.g., energy storage For device fabrication, the substrate 104 may be nickel foil or nickel It may contain foil, but is not limited to aluminum, copper or steel or polyethylene terephthalate (PE T) any suitable metallized material, including metallized plastics such as aluminum It is understood that metals can be used in place of nickel.

[0044] For example, by supporting one or more targets containing target material 102, one or more The target support assembly 108 is positioned to support the target material 102. Each of the one or more target support assemblies 108 supports one or more targets. In FIG. 1, only one of the target support assemblies 108 is clearly visible. 2 and 3 show the target support assembly 108 more fully. In some examples, the target support assembly 108 supports the target during sputter deposition. At least one plate or other support that supports or holds the mat material 102 in place. The structure may be provided.

[0045] The target material 102 may be any material that is to be sputter deposited onto a substrate 104. For example, target material 102 is the material to be deposited on substrate 104 by sputter deposition. In some instances, for example, energy storage For fabrication of an energy storage device, the target material 102 is a cathode material for the energy storage device. The layer is made of lithium cobalt oxide, lithium iron phosphate, or alkali metal polysulfide. may be or include a material suitable for storing lithium ions; Alternatively, it may be or contain a precursor material thereof. Additionally or alternatively, the target material 102 may be an anode layer of an energy storage device. Examples include lithium metal, graphite, silicon, or indium tin oxide. It may be or contain these, or may be a precursor material thereof Additionally or alternatively, the target material 102 may include precursor materials thereof. The electrolyte layer of the energy storage device is made of ionic materials such as lithium phosphate nitride (LiPON). It may be or include a material that is an electrical conductor but also an electrical insulator, or It may be or contain a precursor material thereof. The sputter material 102 is reacted with nitrogen gas, for example, in the sputter deposition region 112, to form a layer on the substrate 104. LiPO may be or contain LiPO as a precursor material for depositing LiPON on the substrate. That's fine too.

[0046] During use, as the substrate 104 is transported through the sputter deposition region 112, A first region (shown as a stripe and referred to as a stripe) is deposited on a first portion of the substrate 104. On the second portion, a second region (shown as a stripe and called a stripe) is deposited, and the first stripe is A target material 102 of a different density than the second stripe or a target material of a different composition than the second stripe. 102 on a substrate 104. To effect target deposition, the target support assembly 108 in the example herein includes: Positioned to support one or more targets depending on their position relative to the sputter deposition region 112 Therefore, in such an example, The deposition of the first and second stripes is performed by a sputter deposition device 10 such as a mask. Another feature of the present invention is the positioning of the target material 102 relative to the substrate 104. In this way, for example, the deposition of stripes of material forming a particular pattern of stripes on the substrate 104 is For example, such deposition may be performed continuously or in a mass stream. Compared to other processes where deposition can be stopped to clean equipment parts such as Furthermore, the process can be performed with less disruption, as materials are deposited on the substrate and then removed. compared to other methods where material is deposited on a mask in areas of the substrate that remain free of material. This can reduce the amount of material loss during deposition. The deposition patterns formed in such an arrangement are described in more detail with reference to Figures 2 to 10.

[0047] In some examples where they are shown, the device comprises a plasma generating array 106. The plasma generating array 106 may be attached to a target support assembly within the sputter deposition region 112. Plasma 1 for sputter depositing target material 102 supported by bridge 108 It is arranged to bring 20.

[0048] In some examples, the plasma generating array 106 is separated from the conveyor system 110. For example, the plasma generating array 106 may be arranged semi-automatically from the conveyor system 110. In this case, the conveyor system 110 and the sputtering A plasma 120 may be generated away from the deposition region 112 .

[0049] In some examples, the plasma generating array 106 includes one or more antennas 122. The one or more antennas 122 may be used to induce gases from the process gas or sputter gas. To generate the coupled plasma 120, a suitable radio frequency power supply system is used. In some examples, radio frequency power can be transmitted from, for example, 1 MHz to Frequencies of 1 GHz, frequencies between 1 MHz and 100 MHz, frequencies between 10 MHz and 40 MHz, or Transmitted through one or more antennas 122 at a frequency of approximately 13.56 MHz or a multiple thereof. The plasma 120 can be generated by the radio frequency power. This causes ionization of the process gas or sputter gas.

[0050] One or more of the antennas in the plasma generating array 106 may be elongated antennas 122. The elongated antenna 122 is positioned so that the conveyor system 110 carries the substrate 104. The antenna may be elongated along the conveying direction D in which it is placed. In such a case, the elongated antenna The axis of rotation 115 of the drum 114 may extend in a direction perpendicular to the axis of rotation 115 of the drum 114. The rotation axis 116 passes through the origin of the radius of curvature of the curved drum 114 and is located at the position where the drum 114 is attached in FIG. In such a case, the antenna is aligned with the conveying direction D or the drive shaft. The antenna is oriented in the conveying direction D or the drum 1 so as to be elongated in a direction perpendicular to the rotation axis of the drum 114. It is not necessary to strictly or precisely follow the direction perpendicular to the axis of rotation of 14. For example, If the length of the antenna 122 parallel to a given direction is greater than the width of the antenna 122 perpendicular to a given direction, , the antenna 122 may be considered to be elongated along a given direction.

[0051] In some cases, the antenna may be linear, and in other cases, the antenna may be curved. For example, the conveyor system 110 may be configured to transport the substrate 104 along a curved path. When positioned in a bay, for example as shown in FIG. 1, one or more elongated antennas 122 For example, such an antenna 122 may be curved in the same direction as the curvature of the curved path. The face may be half-moon shaped. A curved antenna, such as antenna 122 in FIG. C, but parallel to the curved path C, e.g. The substrate is radially and axially offset from the curved surface of the curved member, such as the drum 114, through which the substrate is guided. The curved antenna may be driven using radio frequency power. , generating a plasma 120 having a substantially curved shape.

[0052] In some examples, as can be seen more clearly in FIG. 2, the plasma generating array 106 may include: Two antennas 122a and 122b are provided to generate the inductively coupled plasma 120. FIG. 2 shows the substrate 104 and elements of the conveyor system 110 omitted for clarity. The antennas 122a and 122b extend substantially parallel to each other. For example, they may be disposed laterally to each other on either side of the sputter deposition region. In the example, if they are parallel to each other, they are parallel to each other within manufacturing or measurement tolerances. or when the two elements are parallel to each other within a few degrees, such as within 5 or 10 degrees. Such an arrangement may be considered to be substantially parallel to one another. , 122b, allowing for precise generation of elongated regions of plasma 120. As a result, precise confinement of the plasma 120 generated within the sputter deposition region 112 is achieved. In some examples, the antennas 122a, 122b may The antennas 122a, 122b may be of a similar length to the get support assembly 108. are spaced apart by a distance similar to the width of the substrate guide that guides the substrate 104 through the deposition region 112. In FIG. 1, the substrate guide is provided by a drum 114. As shown, the spacing between the antennas 122a, 122b is adjusted by conveying the antennas 122a, 122b together. The width of the antennas 122a and 122b may be the same as the width of the web of the substrate 104 to which they are attached. a length that corresponds to the length of the plate guide (and therefore to the width of the web of the substrate 104) This can result in a plasma 120 being generated across the region, thus sputter deposition region 1 The plasma 120 may be made available evenly or uniformly across the width of the 12. This may result in an even or uniform sputter deposition.

[0053] The sputter deposition apparatus 100 in the example of FIG. 1 further comprises a confinement array 124. During use, sputter deposition of target material 108 onto the web of substrate 104 may occur. To achieve this, the confinement array 124 directs the plasma 120 (e.g., a confinement magnetic field that substantially confines the plasma generated by the plasma generating array 106 The sputter deposition region 11 may include one or more magnetic elements arranged to provide If leakage or other migration of plasma 120 to regions outside of the It has little effect on the rate of sputter deposition and is therefore ineffective in continuing the sputter deposition process. When visibly small or significantly small, the plasma 120 is 2. In some cases, the confinement array 124 may be , comprising at least one confining magnetic element elongated along the conveying direction D. The confined magnetic element may be elongated in a direction parallel to the conveying direction D or, within the measurement tolerance, in the conveying direction D. It may be elongated in a direction parallel to D, or may be oriented in the conveying direction D within a few degrees, such as within 5 or 10 degrees. The length of the confining magnetic element parallel to the conveying direction D may be elongated in the parallel direction, or the length of the confining magnetic element parallel to the conveying direction D may be It may be elongated so as to be greater than the width of the confining magnetic element perpendicular to the direction of transport D.

[0054] 1 and 2, the confinement array 124 includes two confinement magnetic elements 124a, 124b, and 124c. 4b, the two confining magnetic elements 124a, 124b being connected to the rotation axis of the drum 114. away from the antenna 122 in a direction parallel to, but parallel to, the antenna 122. Therefore, In FIG. 1, the confining magnetic elements 124a, 124b are located behind the first antenna 122a. The confinement magnetic element is located between the first antenna 122a and the second antenna 122b. The positions of the children 124a, 124b are more clearly shown in FIG.

[0055] The confinement magnetic field generated by the confinement array 124 follows the curve of the curved path C. To confine the plasma 120 to the curved region, at least the sputter deposition region 112 characterized by magnetic field lines arranged to substantially follow the curve of the curved path C in In some instances, the magnetic field lines characterizing the confining magnetic field may be at least partially stacked. In order to substantially follow the curve of the curved path C in the cross section, The imaginary line connecting the two may be arranged to be curved.

[0056] In the example of FIG. 1, each is substantially linear and parallel to the axis of rotation of the drum 114. Extending in any direction, but substantially following the curve of the curved path C at least in the sputter deposition region 112. In order to follow the magnetic field, the imaginary lines extending perpendicular to the magnetic field lines and connecting the magnetic field lines are arranged so as to be bent. The confinement array 124 is arranged to provide a confinement magnetic field including confinement field lines positioned in the confinement array 124. It will be placed.

[0057] In some examples, one or more of the confining magnetic elements 124a, 124b is an electromagnet. The sputter deposition apparatus 100 may be configured to adjust the strength of the magnetic field provided by one or more of the electromagnets. A controller (not shown) may be provided to control the It may allow for adjustment of plasma density at the plate 104 and / or the target material 102; It may therefore be possible to improve control in sputter deposition. This may allow for increased flexibility in the operation of the nozzle deposition apparatus 100.

[0058] At least one of the confining magnetic elements 124a, 124b may comprise a solenoid. The solenoid may have an opening through which the plasma 120 passes during use. The opening may be curved and may be aligned with the longitudinal axis (axis of rotation) of the curved member (see FIG. 1). The drum 114 may be elongated in a direction substantially perpendicular to the axis of rotation of the drum 114. In other words, such a curved solenoid may substantially follow the curve of the curved path C. For example, a curved solenoid may have radial and radial forces acting from the curved surface of the curved member (drum 114 in FIG. 1). It may be axially offset but parallel to the curved surface of the curved member. This is shown in Figure 2. FIG. 2 shows a first confining magnetic element positioned intermediate the first antenna 122a and the curved member. 124a (which may be a curved solenoid). The magnetic element 124b is positioned on the opposite side of the curved member from the first confining magnetic element 124a. The second confining magnetic element 124b (which may be a curved solenoid) is Such a curved solenoid is disposed between the antenna 122b and the curved member. In order to substantially follow the curve of the curved path C in the sputter deposition region 112, Confinement in which magnetic field lines are arranged so that the imaginary lines that connect the magnetic field lines are bent. A magnetic field may be provided.

[0059] The plasma 120 may be generated along the length of the antennas 122a, 122b. The protrusions are located within the region bounded by 122a, 122b and the confining magnetic elements 124a, 124b. The plasma 120 can be confined by the confining magnetic elements 124a, 124b. In this case, the length of the curved sheet is The curved sheet plasma 12 may extend in a direction parallel to the longitudinal (rotational) axis of the curved member. 0 is caused by the magnetic field provided by the confining magnetic elements 124a, 124b around the periphery of the curved member. The curve of the curved member (such as the curve of drum 114 in FIG. 1) may be confined to the The thickness of the curved sheet of plasma is determined by the length of the curved sheet and The curved sheet plasma may have a substantially uniform density along its width. For example, the density of the curved sheet of plasma may be one of the length and width. Both may be substantially uniform. , it may be possible to increase the area over which sputter deposition can occur, and therefore Efficient sputter deposition may be possible and / or the direction and The plasma density at the web of the substrate 104 is increased both in the direction across the width of the substrate 104. As a result, this can result in a uniform distribution around the surface of the curved member, for example. This allows for more uniform sputter deposition on the web of substrate 104 over the length of the curved member. This may improve the uniformity of processing of the substrate 104.

[0060] A curved sheet, e.g., a curved sheet of substantially uniform density at least in the sputter deposition region 112 By confining the plasma 120 in a sheet shape, it is possible to alternatively or additionally use a curved member 1 The width of the substrate 104 is measured both around the curve of the curved member 114 and across the length of the curved member 114. This may allow for a more uniform distribution of plasma density in the web. For example, across the width of the substrate 104 in a direction around the surface of the curved member, or along the web of the substrate 104. This can result in a more uniform sputter deposition. This can, for example, improve the uniformity of the substrate after processing and can also improve, for example, the quality This can reduce the need for maintenance, for example, because the magnetic field lines that characterize the generated magnetic field are It draws a tight loop in and out, and therefore does not result in a uniform plasma density distribution at the substrate. This can be compared to a magnetron-type sputter deposition apparatus that does not have a magnetron.

[0061] In some instances, the plasma 120 is dense at least in the sputter deposition region 112. For example, the plasma 120 (in the form of a curved sheet or other shape) , at least in the deposition region 112, e.g., 10 11 cm -3 The density may be higher than the deposition area 1. The high density plasma 120 at 12 allows for efficient sputter deposition and / or high rate sputter deposition. This may make it possible.

[0062] In the example shown in FIG. 1, the target support assembly 108 is substantially curved. In the example of FIG. 1, the target supported by the target support assembly 108 The material 102 is then substantially curved accordingly. Any portion of the target support assembly 108 may be curved along the direction of the curve. forms an obtuse angle with any other part of the support assembly 108. Different portions of the target support assembly 108 may support different target materials, e.g. For example, to provide a desired deposition configuration or composition on the web of substrate 104 .

[0063] In some examples, the curved target support assembly 108 may be configured to follow the curve of the curved path C. For example, a curved target support assembly 108 may substantially follow a curve. It may substantially follow the curved shape of the curved path C or may reproduce the curved shape of the curved path C. For example, a curved target support assembly 108 may be radially offset from the curved path. However, it may have a curve that is substantially parallel to it. For example, a curved target support Assembly 108 has a curve that has a common center of curvature with curved path C, but The radius of curvature may be different from the radius of curvature of the sphere, and in the example shown it has a larger radius of curvature. Accordingly, the curved target support assembly 108 results in a curved member during use. A curved plasma 120 that is substantially confined around (the drum 114 in FIG. 1) In other words, in some examples, the plasma 120 may substantially follow the substrate. The confinement of the confinement array located between path C of 104 and the target support assembly 108 Therefore, the magnetic element 124a, 124b can be substantially confined to the curved path C. The target support assembly 108 may substantially follow both curves. In other cases, one or more of the target support assemblies and / or the target support assembly The target supported by the assembly may be planar, e.g., not curved. Good too.

[0064] Example target support assembly 108 (and correspondingly, target support assembly 1 The target material 102 supported by the flexure 108 extends along the entire length of the curved member (such as the drum in FIG. 1). The drum 114 may extend substantially across the entire surface, for example in a direction parallel to the longitudinal axis of the drum 114. It should be understood that this is carried by the drum 114 and the target material 102 is deposited. This maximizes the surface area of ​​the web of substrate 104 that can be supported. The target support assembly 108 (and the target material 108 supported by the target support assembly 108) 02) extends parallel to the bottom of the drum 114, coinciding with approximately one-quarter of the diameter of the drum 114. However, in other examples, the target support assembly 108 and / or the target The get material 102 may extend parallel to the drum 114 over a larger area. The target support assembly 108 and / or target material 102 may be positioned above the dome of FIG. 1, for example, the target support assembly 1 At least one end of the 08 is aligned with or is attached to a mandrel of the drum 114. It may extend above that.

[0065] The plasma 120 is guided by the curves of both the curved path C and the curved target support assembly 108. The curved diameter can be substantially confined by the confinement array 124, which substantially follows the curve. The area or volume between path C and the curved target support assembly 108 is accordingly: The sputter deposition area 112 may be curved around a curved member. Sputter deposition of target material 102 onto a substrate 104 carried by a bare system 110 This can represent a curved volume that is transported by a conveyor system 110 and constantly shifts. Allows for an increased surface area of ​​the web of substrate 104 present in the putter deposition area 112 As a result, this can result in a larger area of ​​the substrate 104 onto which the target material 102 may be deposited during use. This may allow for an increased surface area of ​​the web, which in turn may allow for a target The spatial mounting area of ​​the support assembly 108 is not substantially increased, and the drum 11 4, sputter deposition is achieved without changing the size of the components of the conveyor system 110. This may allow for an increased area for reel-to-reel tie-ins, for example. The substrate 104 is then moved through the device at a faster (even faster) rate for a given deposition rate. It may be possible to deliver a web of 1000 times the thickness of the film, thus allowing for more efficient sputter deposition. Not only may this be possible, but it may also be possible to do so in a space-efficient manner.

[0066] Further features of the sputter deposition apparatus 100 of FIG. 1 are shown in FIG. 2, which illustrates the substrate 10 4, a portion of the conveyor system 110 and a portion of the plasma 120 are omitted for clarity. 2 shows a plan view of the sputter deposition apparatus 100 of FIG.

[0067] In the example of FIG. 2, the target support assembly 108 is a first target support assembly. The first target 102a is positioned to support the second target 102b. A support assembly is used to support the second target 102b, and a third A target support assembly is arranged to support a third target 102c. The first target support assembly, the second target support assembly, and the third target support assembly Both the target support assembly and the target support assembly are omitted from FIG. 2 for clarity, but are more clearly shown in FIG. However, in other examples, In this case, the target support assembly may be configured with more or fewer target support assemblies. In FIG. 2, the first target 102a, the second target 102 The first target 102b and the third target 102c each contain a different material. The material of the first target may be different from the material of the second target. Thus, the first target, the second target, and / or the third target may be any one or more of: The target support assembly 108 may support multiple targets, all of which may comprise the same material. In examples such as those shown in Figures 1 to 4, where the target is positioned to support the One of them may be smaller than the other, for example, if the target is stored in a vacuum environment. A smaller target may be manipulated, stored, and / or processed one or more times more efficiently than a larger target. can be easily transferred to the target support assembly.

[0068] As described with respect to FIG. 1, the first target 102a, the second target 102b, and the The get 102b and the third target 102c are each elongated along the conveying direction D, In this case, the conveying direction D is perpendicular to the rotation axis 116 of the drum 114. Using target deposition, a first target 102a, a second target 102b, and a 102b and the third target 102c to cause deposition of material on the first target 102c. The first target 102a, the second target 102b and the third target 102c are in the sputter deposition region. 1) from the first side of 112 (the left side of FIG. 1) to the second side of 112 (the right side of FIG. 1). In such a case, the first target support assembly, the second The target support assembly and the third target support assembly are For example, the substrate 10 may be elongated in a direction perpendicular to the axis 116 within the sputter deposition region 112. 4, a first target 102a, a second target 102b and a third target 10 3c, the first target 102a, the second target 102b and a third target 102c. a second target support assembly and a third target support assembly; It may extend from a first side of the deposition region 112 to a second side of the sputter deposition region 112. stomach.

[0069] In the example where the conveyor system 110 includes a curved member (such as a drum 114), A get support assembly (e.g., a first target support assembly shown in FIG. 3, a second a target support assembly and a third target support assembly; Assembly, etc.) of the target that substantially follows the curvature of at least a portion of the curved member For example, the target support assembly may be arranged to support at least one of the target support assembly. 108 is a support for one or more targets that substantially conforms to the curvature of at least a portion of the curved member. For example, at least one target may be positioned such that at least one of the curved members If the curvature of the curved member is reproduced in part or not, the curvature of the curved member is reproduced in part or not. When following, the target support assembly substantially follows the curvature of at least a portion of the curved member. For example, a target support The assembly has a common center of curvature with the curved member, but a different radius of curvature than the curved member. At least one target may be supported along a curved path, e.g., by the curve of a curved member. At least one target is supported along a curved path having a radius of curvature greater than the radius of curvature. For example, at least one target may be attached to at least a portion of the curved member. The curved member is disposed along a curved path that is radially offset but substantially parallel to at least a portion of the curved member. It may be placed.

[0070] At least one of the targets may itself have a curved surface, and the curved surface may be formed by at least one of the curved members. In some examples, the conveyor system may substantially follow at least a portion of the curvature. The first surface of the first target 102a facing the conveyor system is curved or The second surface of the facing second target 102b is curved or the conveyor system and / or a third surface of the third target 102c facing the If a surface deviates from a flat plane, it can be considered curved. For example, For example, the target support assembly 108 may be connected to a conveyor system 110 that transports the substrate 104. and supporting at least one target having a surface that is at least partially curved around the Such an example is shown in Figure 1. In Figure 1, each The surface of each of the targets is formed on at least a portion of the curved member (in this example, the drum 11 4) and follows a curved path that can be considered to substantially follow and reproduce the curvature of the However, in other cases, at least one of the targets has a curved surface. It may not have a fin, but may instead have a flat surface that lies in a plane, for example.

[0071] In other cases, instead of or in addition to having a curved surface, The get support assembly 108 may be mounted end-to-end (although not required in this case). In addition, the curved member is arranged to support a plurality of targets along at least a portion of the curve of the curved member. In such a case, the surface of one of the targets may be positioned so that the other The surface may define an obtuse angle relative to the surface of the target. The obtuse angle may be selected so that the targets are aligned together.

[0072] In other cases, the target support assembly 108 may have a flat surface rather than a curved surface. Alternatively or additionally, the bay may be configured to support at least one target. Rather than following the curvature of the curved member, the material is fed into a plane, e.g., the sputter deposition apparatus 100. In a plane parallel to the substrate 104 at the time (for example, coinciding with the conveying direction D), the target support axis An assembly 108 may be arranged to support at least one target.

[0073] In the example of Figures 1 to 4, the first target support assembly, as shown in Figure 3, , a first support portion 108a' and a second support portion 108a''. The first support portion 108 a' is positioned to support a first portion 102a' of the material of the first target 102. The second support 108a" supports the second portion 102a" of the material of the first target 102. However, in another example, the first support portion 108a' The first and second support members may support different target materials. The assembly may have more or fewer supports, each supporting one or more turns. In this example, the first target 102a may be supported by a first support. 108a′ and the second support portion 108a″. That is, the first target 1 The first portion 102a' of the first target 102a is connected to the second portion 102a" of the first target 102a. Separate or otherwise separate from the second portion 102a″ of the first target 102a However, for example, the first portion 102a When the first portion 102a' and the second portion 102a' comprise the same material or when the first portion 102a' and the second portion 102a' comprise the same material, The two portions 102a" are supported by the same target support assembly and / or are associated with the same target magnetic element 126a (described more below), the first The portion 102a' and the second portion 102a" are parts of the same thing, i.e., the first target. In other cases, the first target The central portion is positioned so as to overlap the gap between the first support portion 108a' and the second support portion 108a''. The first target may be consecutive to the first target.

[0074] In this example, the first support portion 108a' and the second support portion 108a'' are inclined relative to each other. This is more clearly shown in Figure 3, which shows the rotation of the drum 114. The target support assembly 108 of FIG. 2 is shown along the rotation axis 116. a first support member 102a′ disposed to support the first portion 102a′ of the first target 102; The surface of the support portion 108a' supports the second portion 102a'' of the first target 102. The angle between the surfaces of the second support portion 108a'' disposed in this manner is an obtuse angle.

[0075] This arrangement places a first target 10 on a first portion of the substrate 104, forming a first stripe. For example, this arrangement may facilitate the deposition of the two materials by the conveyor system 110. During transportation of the substrate 104, the material of the first target is deposited in an area overlying the first portion of the substrate. Therefore, the first portion of the substrate 104 can be arranged more compactly. The density of the material of the first target 102 being deposited can be increased, and the material on the substrate 104 This can reduce the deposition of material from the first target 102 at other locations. If not, it can be restricted.

[0076] In this example, the sputter deposition system 100 includes a first target 102a associated with the first target 102b. The first target magnetic element 126a, the second target magnetic element 126b, and the second target magnetic element 126c are connected to the second target magnetic element 126b. a third target magnetic element 126b, and a third target magnetic element associated with the third target 102c. However, in other cases, there may be more or less targets. There may be fewer target magnetic elements than targets.

[0077] In this example, (in this case, the first support portion 108a' and the second support portion 10 The first target support assembly (comprising a first target magnetic element 12) The first target magnetic element 126a is configured to, during use, a is the plasma generated by the first target magnetic element 126a and the plasma generating array 106. The first target support assembly may be located below the first target support assembly so as to be present between the plasma 120. For example, the first target support assembly may include a first target magnetic element 126a and a A conveyor system 110 is positioned to support a first target 102a. The target support assembly 108 may also or alternatively include a second target magnetic A second target 102b is supported between the sensor element 126b and the conveyor system 110. and / or the third target magnetic element 126c and the conveyor system A third target 102c may be positioned between the target 110. The first target magnetic element 126a forms part of the first target support assembly. In other further cases, the first target magnetic element 126a is a separate element and / or located at a different location relative to the first target support assembly. You may do so.

[0078] The first target magnetic element 126a is considered to provide a bias for each target. This allows for control of the magnetic field associated with the first target. The magnetic field provided by the magnetic element 126a is, for example, to confine the plasma 120 to a region adjacent the supported first target 102. This is shown diagrammatically in Figure 3, where plasma 120 is The target 102a extends toward the first portion 102a' and the second portion 102a''. The first portion 120a is located at the center of the first electrode 120a.

[0079] By controlling the magnetic fields associated with different targets, the For example, the sputter deposition system 100 includes a first target 102a. The second target magnetic element 126a controls the sputter deposition of the material. Alternatively or additionally, the device may include a controller arranged to control the magnetic field. Additionally, the controller controls the sputter deposition of material on the second target 102b. configured to control a second magnetic field provided by the second target magnetic element 126b. For example, one or more of the target magnetic elements 126a, 126b, 126c may be an electromagnet. and may have a controllable magnetic field strength using a suitable controller. Such a controller is a microprocessor arranged to control the current through the electromagnet. The magnetic field provided by the electromagnet may be generated by a processor such as a Controlling Field Strength. References herein to controlling a magnetic field include any characteristic of a magnetic field, such as magnetic field strength. This can be thought of as referring to controlling the above.

[0080] In some cases, during transport of the substrate 104 through the sputter deposition region 112, e.g., A first target magnetic element 126a generates one magnetic field and a second target magnetic element 126b generates a second magnetic field. The target magnetic element 126b is used to measure a first magnetic field associated with the first target 102a. A second magnetic field may be generated in relation to the field and the second target 102b. The magnetic field may be different from the second magnetic field, for example in terms of magnetic field strength or other characteristics such as the direction of the magnetic field lines. As explained above, in this way, the first target 102a and The control of the magnetic field associated with the second target 102b is performed to control the magnetic field associated with the second target 102b. Used to control the amount of material on the first target 102a and the second target 102b This increases the flexibility of the sputter deposition apparatus 100, allowing for example This allows for a simple control of the relative amounts of different target materials deposited on the target. The target magnetic elements may be related to the target, e.g., a specific target may be more sensitive than other targets. When a magnetic field is generated by a target magnetic element close to the target, the magnetic field is For example, (which may be an adjacent or nearby target) so that the magnetic field strength is higher near the target than near other targets. The field lines of such a magnetic field tend to be denser near the target than near other targets. The optical fiber may have a degree.

[0081] FIG. 2 shows the third portion 120c of the plasma in plan view, and for clarity, the plasma The other parts of Zuma are omitted. The third target under the third target support assembly. A third magnetic field provided by the third magnetic element 126c causes the third target support assembly The third target 102c is supported by a pallet and has an elongated shape extending along the length of the third target 102c. The third portion 120c of the target 102 is substantially confined. c on the substrate 104. Therefore, the conveyor system 110 transports the substrate 104. In the example of Figures 1 to 4, where the target is elongated along the conveying direction D, A portion of the plasma (such as the third portion 120c of the plasma) is elongated. The target magnetic element and / or the confining magnetic element may be substantially confined. Partial confinement of the plasma may be achieved by a confinement arrangement such as those shown in Figures 1 to 4. In this example, the first portion 120a, the second portion 120b, and the third portion 12 0c are elongated along the conveying direction D and have a first portion 120a and a second portion 120b. b has a shape similar to that of the third portion 120c shown in FIG. 2, for example, in plan view. However, this is only an example, and in other cases, the plasma or portions of the plasma may be different. You may become trapped.

[0082] A sputter deposition region 11 that is free of magnetic elements such as target magnetic elements or confinement magnetic elements. The second region generally has a lower magnetic field strength, e.g., a lower magnetic field where the magnetic field lines are less dense. strength, which may reduce the containment effect in these areas, This can affect the shape of the plasma. This can be seen in Figure 2, where the The third portion 120c is, for example, outside the central region (where the third target magnetic field element is located). area (where there is no third target magnetic field element), and for example, the central area (where there is no third target magnetic field element) The width is in the outer region (where there is no third target magnetic field element) This allows the third portion 120c of the plasma to be substantially In effect, the dogbone shape is formed by, for example, a long, thin central portion and a long, thin central portion. It has a shape with two ends on either side of the central part, each wider than the narrow central part. The shape of the plasma generally varies within and / or between the sputter deposition region 112 and the sputter deposition region 112. The shape of the plasma depends on the arrangement of magnetic elements around it, and is usually not static. Furthermore, the magnetic field provided by the magnetic element may be constantly changing, causing the plasma The shape or other configuration of may further be varied.

[0083] 1 to 4, a first target support assembly, a second target support assembly, The first target support assembly and the third target support assembly are identical to each other. a first target support assembly, a second target support assembly and a third target support assembly One description of the assemblies is, of course, a first target support assembly, a second any other one of the first target support assembly and the third target support assembly Similarly, in FIGS. 1 to 4, the first target magnetic element 126a, the second The second target magnetic element 126b and the third target magnetic element 126c are The first target magnetic element 126a, the second target magnetic element 126b, and the The description of one of the first and second target magnetic elements 126b and 126c is of course the same as that of the first and second target magnetic elements 126a and 126b. The first target magnetic element 126a, the second target magnetic element 126b and the third target However, in other examples, the first magnetic element 126c may be applied to any other one of the first magnetic elements 126a and 126b. a first target support assembly, a second target support assembly, and a third target; At least one of the support assemblies may be different from the others and / or the first The target magnetic element 126a, the second target magnetic element 126b and the third target It is understood that at least one of the magnetic elements 126c may be different from the others. stomach.

[0084] As can be seen in FIG. 1, the conveyor system 110 of the sputter deposition apparatus 100 Sputter deposition is performed from a first side of deposition region 112 (the left side of sputter deposition region 112 shown in FIG. 1). the substrate to the second side of the sputter deposition area 112 (the right side of the sputter deposition area 112 in FIG. 1). 104. In an example, one or more target support assemblies 1 08 is a cross-sectional view of a first side of the sputter deposition region 112 to a second side of the sputter deposition region 112. The gaps extending to the sides are designed to support at least two targets between them. One or more target support assemblies 108 are positioned in the sputter deposition region. A gap extending from a first side of the sputter deposition region 112 to a second side of the sputter deposition region 112 is formed. between the first target support assembly and the second target support assembly. One or more target support assemblies 108 support at least the first target 102a. a first target support assembly and at least a second target support member arranged to support the first target; A second target support assembly may be provided that is positioned to support target 102b. In addition, a gap 128 is formed between the first target 102a and the second target 102b. For example, a gap 128 may exist between the first target support assembly and the second target support assembly. The gap 128 corresponds to the area between the first target support assembly. The target material is then released from the second target support assembly. However, it does not have to be in the gap 128. The gap 128 is between the first target 102a and the second target The get 102b may be devoid of other intervening elements. For example, it may be a sputter deposition area. As the substrate 104 is conveyed through the area 112, the portion of the substrate 104 corresponding to the gap 128 Prevents other materials from being deposited on top.

[0085] From a first side of the sputter deposition region 112, e.g., a sputter The gap 128 extends to the second side of the deposition region 112, thereby forming a gap 128 During movement of the substrate 104 through the gap 128, a portion of the substrate 104 overlaps the gap 128. As it traverses the sputter deposition region 112, for example, this portion of the substrate 104 is exposed to the first target. The first target 102a or the second target 102b may not overlap with the first target 102a or the second target 102b. does not cover the second target 102b. This therefore results in a corresponding gap in the deposition. is generated in this portion of the substrate 104.

[0086] This is more clearly shown in Figure 4, which shows the sputter deposition of Figures 1 to 3 in use. 4, a top view of the apparatus 100 is shown. As can be seen in FIG. After passing through the substrate 104, the substrate 104 has a first stripe 130 on a first portion of the substrate 104, a second stripe 130 on the substrate 104, and a third stripe 130 on the substrate 104. a second stripe 132 on a second portion of the substrate 104; a third stripe 134 on a third portion of the substrate 104; a fourth stripe 136 on a fourth portion of the substrate 104 and a fifth stripe 138 on a fifth portion of the substrate 104; In this example, the first stripes 130 are stripes of the material of the first target 102a. The second stripe 132 is the exposed surface of a second portion of the substrate 104, and the third stripe 134 is The fourth stripe 136 is a stripe of material from the second target 102b, and the fourth stripe 136 is a stripe of material from the third portion of the substrate 104. The fifth stripe 138 is the exposed surface of the third target 102c, and the fifth stripe 138 is the stripe of material of the third target 102c. In this manner, the sputter deposition apparatus 100 can be used, and the first stripe 130 can be positioned adjacent to the second stripe 13 One or more targets may be arranged to include target materials of different densities and / or different compositions. 108. The sputter deposition of the target material 102 is carried out by a support assembly 108. vinegar.

[0087] In the example of Figures 1 to 4, the first stripe 130 has a target of a different density than the second stripe 132. In this case, the first stripes 130 have a denser texture than the second stripes 132. The second stripe 132 has a target material (in this case, the first target 102a). is the material of the less dense first target 102a and the less dense second target 102b. For example, the first target 102a and / or the second target 102b may include a material. Substantially no target material (from the second target 102b) is present in the second stripe 132. For example, the second stripes 132 may be made of the material of the first target 102a and / or the second target 102b. The target 102b may be substantially free of material. A given material may be present within a measurement tolerance. If not present, it is relatively small or insignificantly small and negligible. If not present, or if further removal processing is required before the substrate 104 can be used for its intended purpose. If the second stripe 132 is present in a small enough amount that it does not require For example, the stripe of material may be a thin strip of material or an extended strip of material. The stripes may be smaller in width than in length and therefore correspond to bands of material. The opposite ends of the stripes along their length are roughly parallel to each other, but this is not necessarily the case. For example, the long edges of the stripes of material may be slightly uneven or non-uniform, e.g. It may also contain lines that do not follow exact straight lines. It can be considered that this usually corresponds to stripes, which are elongated in shape.

[0088] In the example herein, the material is transported by a conveyor system 110 through a sputter deposition area 112. By adjusting the position of the target material relative to the substrate 104 as the substrate 104 is transported, This results in a striped pattern on the substrate 104. This allows the spatula to be removed without further processing. During a single pass of the substrate 104 through the deposition apparatus 100, at least two stripe patterns are formed. can be provided on the substrate 104. Therefore, the patterned substrate 104 can be It is more efficient and easier to produce than other methods. Furthermore, the target material is 132) and the desired area of ​​the substrate 104. This can reduce the amount of target material lost due to deposition in the area of ​​the substrate. This eliminates the need to remove material from the second region of 104 and reduces the loss of removed target material. Prevent loss.

[0089] In the example of FIG. 4, within a first region that substantially overlaps the first target 102a By transporting the first portion of the substrate 104, the first target 102a and the second target In a second region that substantially overlaps the gap 128 between the get 102b, a second by conveying the portion and in a third region that substantially overlaps the second target 102b. Then, by conveying the third portion of the substrate 104, the first stripe 130, the second stripe 132, and A third fringe 134 may be generated. If the region completely overlaps the target, or if the measurement An area is said to substantially overlap a target if it overlaps the target within the tolerance or manufacturing tolerance. In some cases, sputter deposition of the target material can cause the target material If the target is located within the area, the area can be considered to substantially overlap the target. During deposition, the target material spreads or scatters, for example, the area coverage may be affected by the conveyor system. The surface of the target closest to the system 110 may be larger than the surface of the target closest to the system 110.

[0090] A conveyor system 110 transports the substrate 104 through a sputter deposition area 112. the target support assembly without any intervening elements between the one or more targets and the substrate 104. 108 may be arranged to support one or more targets. The sputter deposition apparatus 10 is configured without the use of a shutter or other obstructing elements such as a baffle. 0 allows the target material 102 to be sputter deposited onto the substrate 104. This is done by using a mask This can reduce the amount of target material lost due to deposition on the target. longer to stop than other methods, such as a batch process using a mask. Therefore, the deposition efficiency can be improved. During processing of the substrate 104 by the deposition apparatus 100, at least one intervening element It may be disposed between the material 102 and the substrate 104. Nevertheless, a mask or the like The number of intervening elements may be less than in other methods. Also, post-processing of the substrate 104 may be less than in other methods. For example, the amount of material deposited on the substrate can be reduced compared to the amount of material deposited on the substrate that is to be left uncoated. Such materials may have a lower density than other materials that are deposited with a higher density. can be removed more easily or efficiently than in the case of

[0091] In the example of FIGS. 1-4, the gap 128 is formed so that the conveyor system 110 can move the substrate 104. The second stripe 132 is elongated along the conveying direction D and is arranged to Elongated stripes containing less target material are produced on the substrate 104 in a simple manner.

[0092] Similarly, in such an example, the first target 102a is elongated along the conveying direction D. A target support assembly 108 supports the first target 102a so that the target 102a is Additionally or alternatively, the target support assembly 108 may be arranged such that a second The first target 102b is moved in the conveying direction D so as to be elongated. b, and / or a third target 102c may be arranged to support the may be arranged to support a third target 102c so as to be elongated along D. This facilitates the deposition of stripes on the substrate 104. Furthermore, the use of elongated targets This may improve the uniformity of the material deposited within a given stripe.

[0093] The principle behind the sputter deposition apparatus 100 of FIGS. 1-4 is to deposit a variety of materials onto a substrate 104. The sputter deposition apparatus 1 shown in FIGS. 1 to 4 can be widely applied to producing various different patterns. Other examples utilizing the principles behind 00 are shown in Figures 5 to 10.

[0094] 5 and 6 show respective portions of a sputter deposition apparatus 200 in schematic plan view. The sputter deposition apparatus 200 of Figures 5 and 6 is configured to include a target material 202 and a target 1 through 4, except for one or more target support assemblies that support the target material 202. 5 is the same as the sputter deposition apparatus 100 shown in FIG. 6 shows the sputter deposition apparatus 200 from the same perspective as that shown in FIG. 1 through 4 show the sputter deposition apparatus 200 from the same perspective as the deposition apparatus 100. Features of Figures 5 and 6 that are similar to those shown are designated by the same reference numerals, but with an increment of 100. The corresponding explanations apply.

[0095] In the example of FIG. 5, the target support assembly is aligned along an axis substantially perpendicular to the conveying direction D. The target 202 may be arranged to support targets 202 of different lengths, for example, by rotating a drum. The target 202 is arranged to support targets 202 having different lengths along the rotation axis 216 . In FIG. 5, target 202 has a first length at a first position along axis 216. At a second location along the first portion 140a and axis 216, the first length is different (and this In some cases, the first length is shorter than the second length. The length and the second length are, for example, substantially parallel to the conveying direction D, and are This may be considered.

[0096] In this case, the target 202 is typically T-shaped in plan view. In examples, the target 202 may have other shapes in plan view and still operate. The target support assembly has different lengths along an axis substantially perpendicular to the transport direction D. The get 202 may have any suitable shape or configuration to support the get 202. In this case, for example, The target support assembly may also be generally T-shaped in plan view, although other shapes are possible. is also possible.

[0097] During use of the sputter deposition system 200, a first portion of the substrate 204 is attached to the target 202. The substrate 204 may be transported within a first region that substantially overlaps the first portion 140a of the substrate 204. The second portion is conveyed within a second region that substantially overlaps the second portion 140b of the target. When the substrate 204 is transported in this manner, for example through a sputter deposition region, On a first portion of the plate 204, there is a first stripe 230, and on a second portion of the substrate 204, there is a second stripe 230. Sputter deposition of material on the target 202 may be effected so that two fringes 232 are present. The first stripe 230 is made of a material of the target 202 that has a different density than the second stripe 232 (target The target material may be a target material of different composition. In this case, the second length of the second portion 140b is equal to the first length of the first portion 202 of the target 202. 140a. Therefore, the first length of the substrate 204 through the sputter deposition apparatus 200 is shorter than the first length of the substrate 204. As the target 202 is transported, a given portion of the substrate 204 contacts the first portion 140a of the target 202. 202. This overlaps the second portion 140b of the target 202 for a shorter time than the than on the first portion of the substrate 204 (through the first portion 140a of the target 202). A low density target is formed on a second portion of the substrate 204 (through the second portion 140b of the slot 202). The molten material is deposited.

[0098] The sputter deposition apparatus 200 of FIGS. 5 and 6 may be used without the use of an intervening element, such as a mask. , and efficiently deposit two adjacent target materials at different densities on the substrate 204. It may be used to deposit stripes of

[0099] 7 and 8 show respective portions of a sputter deposition apparatus 300 in schematic plan view. The sputter deposition apparatus 300 of FIGS. 7 and 8 is configured with a target material 302 and a target 1 through 4, except for one or more target support assemblies that support the target material 302. 7 is the same as the sputter deposition apparatus 100 shown in FIG. 8 shows a sputter deposition apparatus 300 in one view, similar to the sputter deposition apparatus shown in FIG. The sputter deposition apparatus 300 is shown in the same view as apparatus 100. The corresponding FIGS. Features of Figures 7 and 8 that are similar to features are designated by the same reference numerals, but with the addition of 200; The corresponding explanations apply.

[0100] In the example of FIGS. 7 and 8, the second target 302b is substantially in the plane of the conveying direction D. but perpendicular to the conveying direction D, e.g., along the rotation axis 316 of the drum 314. The one or more target support assemblies are offset from the first target 302a. The first target 302a and the second target 302b are arranged to support the first target 302a and the second target 302b. If the first target and the second target are displaced from each other, and the displacement is large enough, From the first side of the sputter deposition area to the second side of the sputter deposition area (as in the examples of A gap extending to the center of the first target exists between the first and second targets. In the examples of 7 and 8, the offset between the first target 302a and the second target 302b is , there is insufficient clearance for such a gap. For example, the gap may be in a specific direction, e.g., the conveying direction D Consider the displacement of the second target relative to the first target in a direction along an axis perpendicular to the 7 and 8, for example, the upper end of the first target 302a and the second target 302b in FIG. The displacement considered between the top end of target 302b and the top end of second target 302b along axis 316 is This allows sputtering to occur from the first side of the sputter deposition region. The second target 302b is then passed through the first target 302b to the second side of the deposition region. A path passing through the first target 302a overlaps with the second target 302b, and then There is an overlapping path in the block 302a.

[0101] The second target 302b is aligned along the conveying direction D, e.g., parallel to the conveying direction D. Similarly, or alternatively, a target may be positioned offset from the first target 302a along the axis. A target support assembly supports the first target 302a and the second target 302b. This is the case in Figures 7 and 8, where in this example the first The target 302a and the second target 302b are arranged horizontally in FIG. along the conveying direction D) and perpendicularly in FIG. 7 (i.e. perpendicular to the conveying direction D). This deposits stripes of material onto the substrate 304 according to a desired pattern. Also, one or more target support assemblies may be , may be offset relative to one another along the conveying direction D and / or offset relative to one another perpendicular to the conveying direction D. Good too.

[0102] With this arrangement of the first target 302a and the second target 302b, sputter deposition The conveyor system of the apparatus 300 may transport the substrate 304, and the first a first stripe 330 on one portion of the substrate 304, a second stripe 332 on a second portion of the substrate 304, and 4. The first target 302a and the second target 302b are aligned such that a third stripe 334 is present on a third portion of the first target 302a. This results in sputter deposition of the target material of the second target 302b. , the first stripe 330 is a stripe of material of the first target 302a, and the third stripe 334 is a stripe of material of the second target 302b. In this example, the first target 302a has stripes of material. The material of the second target 302b is different from that of the first target 302a. The material of the first target 302a is a combination of the material of the second target 302b. In some cases, the composition of the second stripes 332 is different from the composition of the first stripes 330. 2 also includes a target having a different density from one or both of the first stripe 330 and the third stripe 334. The material may include a target material, for example a higher density target material.

[0103] The second stripe 332 in this case is the stripe 332 formed by the movement of the substrate 304 through the sputter deposition system 300. The first target 302a and the second target 302b are positioned relative to the substrate 304 when being transferred. For example, one or more target support assemblies may be provided by the first With the substrate 304 in this position, the second portion of the substrate 304 (which results in the second stripe 332) The part overlaps the first target 302a, does not overlap the second target 302b, and With the substrate 304 in position, a second portion of the substrate 304 overlaps the second target 302b. Therefore, the first target 302a and the second target 302b are aligned so as not to overlap with each other. The sputter deposition region may be arranged to support the target 302b. When the substrate 304 is at a first position within the target 302, deposition on the second portion begins with deposition on the first target 302. a and not the second target 30b. When the substrate 304 is at the second position, deposition on the second portion is performed by the second target 302b. , and not the first target 302a. In this case, As the substrate 304 moves through the sputter deposition region, the substrate 304 continues to In other examples, the first The positions of the first target 302a and the second target 302b are opposite to those shown in FIG. For example, the second target 302b may be sputtered more than the first target 302a. It may be near the first side of the deposition region.

[0104] By transporting the substrate 304 using the sputter deposition apparatus 300 of FIGS. A second portion of the substrate 304 (resulting in a second stripe 332) is then aligned with the first target 302a. The substrate 3 may then be transported within a first region of the sputter deposition region that substantially overlaps the substrate 3. 04 (in this case the second portion resulting in the second stripe 332) and transported within a second region of the sputter deposition zone that substantially overlaps the second target 302b. In this way, both the first target 302a and the second target 302b A second material combination can be deposited on a second portion of the substrate 304, forming second stripes 332. It can be achieved.

[0105] The material of the first target 302a and the material of the second target 302b of the second stripe 332 The combination of the material of the first target 302a and the material of the second target 302b Therefore, the sputter deposition apparatus 300 of Figures 7 and 8 is simple and flexible. In this case, the first target 3 can be deposited with the mixed composition. A layer of material 302a may be deposited on the substrate 304, followed by a second target 302b. A layer of material of the first target 302b may be deposited on the layer of material of the first target 302a. However, in other cases, for example, the material may be the first target 302a and the second target After being released from 302b and before the material is deposited on the surface of the substrate 304, The mixture of materials of the target 302a and the second target 302b is formed in the sputter deposition region. This can happen.

[0106] In this example, the first target 302a and the second target 302b are typically: Although rectangular in plan view, this is merely an example and other shapes are possible. The get support assembly supports the first target 302a and the second target 302b. The device may have a shape or arrangement suitable for holding the device.

[0107] 9 and 10 show respective portions of a sputter deposition apparatus 400 in schematic plan view. The sputter deposition apparatus 400 of Figures 9 and 10 is configured to allow for the placement and placement of a target material 402. 1 through 4, except for one or more target support assemblies that support target material 402. 9 is the same as the sputter deposition apparatus 100 shown in FIG. 10 shows the sputter deposition apparatus 400 from the same perspective as in FIG. The sputter deposition apparatus 400 is shown from the same perspective as the sputter deposition apparatus 100. Features in FIGS. 9 and 10 that are similar to corresponding features are given the same reference numerals, but with an increment of 100. are displayed and the corresponding explanations apply.

[0108] The sputter deposition apparatus 400 of FIGS. 9 and 10 includes a first target on a first portion of a substrate 404. A first stripe 430 of material of the get 402a is formed on a second portion of the substrate 404. The second combination of the material of the first target 402a and the material of the second target 402b The material of the second target 402b is deposited on a third portion of the substrate 404, resulting in a stripe 402b. 7 and 8 in that it can be used to provide the third fringe 434 of 9 and 10, however, more than one target support The assembly includes at least one of a first target 402a and a second target 402b. The first target 402a and the second target 402b are arranged at an oblique angle to the conveying direction D. The one or more target support assemblies are arranged to support the target 402b. The first target 402a and the second target 402b may be at an oblique angle to the conveying direction D. The target 402b is flat on the surface of the substrate 404 when it is supplied to the sputter deposition apparatus 400. The first target 402a may be in a plane oblique to the conveying direction D, or and in a plane parallel to the plane tangent to the surface of the second target 402b with respect to the conveying direction D. For example, the first target 402a and the second target 402b may be at an oblique angle. At least one of them is arranged in a plane view of the sputter deposition apparatus 400 with respect to the conveying direction D. For example, if the angle is less than 90 degrees, the angle is considered oblique. between at least one of the first target 402a and the second target 402b and the conveying direction D The angle may be greater than 0 degrees and less than 90 degrees (within measurement tolerances).

[0109] By arranging the first target 402a and the second target 402b in this manner, Therefore, for example, as shown in Figures 9 and 10, the material is transported by a conveyor system. A portion of the substrate 404 (in this case, the second portion of the substrate 404) is 402b and then pass through a portion of the first target 402a, or It overlaps a portion of the second target 402b, and then overlaps a portion of the first target 402a. This results in the first target 40 being printed as second stripes 432 on a second portion of the substrate 404. Depositing a combination such as a mixture of the material of 2a and the material of the second target 402b .

[0110] In the example of FIGS. 9 and 10, a first target 402a and a second target 402b are elongated and rectangular in plan view. The first target 402a and the second target 402b are respectively at the same oblique angle with respect to the conveying direction D. However, this is just an example, and in other cases, the first target and The second target may be of a different shape or location. For example, the first target 402 The angle between the first target 402a and the conveying direction D is different from the angle between the second target 402b and the conveying direction D. For example, the first and second targets may be deposited as second stripes 432. The one or more target support assemblies control the relative amounts of material in the first target. Any shape or configuration suitable for supporting the get 402a and the secondary target 402b. may be.

[0111] 11 and 12 show schematic diagrams of respective portions of a sputter deposition apparatus 500. The sputter deposition apparatus 500 of Figures 11 and 12 includes confining magnetic elements 524a, 524b and 1 to 4, except for the placement of the antennas 522a, 522b. FIG. 11 shows a sputter deposition apparatus 100 from the same perspective as that shown in FIG. 12 shows a deposition apparatus 500, which is identical to the sputter deposition apparatus 100 shown in FIG. 12 shows the sputter deposition apparatus 500 from the perspective of FIG. Since the first roller 518a and the second roller 518b are omitted, the first confining magnetic element 524a and second confining magnetic element 524b can be seen more clearly. Features of Figures 11 and 12 that are similar to features of Figure 11 are designated by the same reference numerals, but with an increment of 400. and the corresponding explanations apply.

[0112] In some cases, as in FIGS. 11 and 12, the sputter deposition apparatus 500 may be configured to Substantially perpendicular, e.g. perpendicular to the conveying direction D, perpendicular to the conveying direction D within the measurement tolerance direction, elongated in a direction perpendicular to the conveying direction D within a few degrees, such as within 5 or 10 degrees. Alternatively, the magnetic element 524 may include another confining magnetic element 524a, 524b. The confining magnetic elements 524a, 524b are provided between the confining magnetic elements 524a, 524b. The region of relatively strong magnetic field strength is arranged to substantially follow the curve of the curved path C. In the example shown diagrammatically in Figures 11 and 24, opposite sides of the drum 514 There are two confining magnetic elements 524a, 524b located at the The confining magnetic elements 524a, 524b are positioned above the bottom of the drive 514. On either side of the drum 514, for example, a feed side where the web of substrate 504 is fed from the drum 514 and a feed side where the web of substrate 504 is fed from the drum 514. The web of substrate 504 follows the curve of the curved path C on the discharge side where it leaves drum 514. Therefore, at least two confining magnetic elements may (further) increase the area of ​​the substrate 504 exposed to the plasma 520, This can increase the area where sputter deposition can occur. Through reel-to-reel type equipment, the material is deposited at a faster (even faster) rate for a given deposition rate. This may allow for a web of substrate 504 to be fed, thus providing a more efficient spinning Similar to the confining magnetic elements 124a, 124b of FIGS. 11 and 12, one or more of the confining magnetic elements 524a, 524b may be an electromagnet. Preferably, the electromagnet may be controlled using a controller that controls the strength of the magnetic field provided. , adjusting the plasma density at the substrate 504. This is done to adjust the operation of the sputter deposition apparatus 500. This can improve flexibility in the

[0113] In some examples, one or more of the confining magnetic elements 524a, 524b may be a solenoid. Each solenoid may be either The plasma 520 may define an opening in which the plasma 520 is located. As an example, there may be two solenoids, each of which may have a supply between them. The region of relatively high magnetic field strength to which the magnetic field is applied is bent so as to substantially follow the curve of the curved path C. In such a manner, the generated plasma 520, as shown in FIG. , through a first solenoid (such as the confining magnetic element 524a) and onto the drum (of FIG. 11). 514 through the sputter deposition region 512 and rises into the second solenoid (confining magnetic For example, as shown in FIG. 12, one or more of the solenoids may pass through the The top may be elongated in a direction substantially perpendicular to the direction of the magnetic field lines generated therein during use. 510. The conveyor system 510 conveys the substrate 504 in a conveying direction D. It may be elongated in one direction.

[0114] Although only two confining magnetic elements 524a, 524b are shown in FIGS. , a further confining magnetic element (not shown), such as a further such solenoid (not shown) It should be understood that the plasma 520 may be arranged along a curved path (not shown). This may allow for a stronger confining field and therefore more precise confinement. and / or more degrees of freedom in the control of the confining magnetic field.

[0115] In examples such as those of FIGS. 11 and 12, the sputter deposition apparatus 500 includes one or more antennas 5 The one or more antennas 522a, 522b may each include The longitudinal axis of the curved member (e.g., the center of the radius of curvature of the curved drum 514) may be elongated. The axis of rotation 516 of the drum 514 through which the one or more axes pass may extend in a direction substantially parallel to the axis of rotation 516 of the drum 514. At least one of the antennas 522a, 522b may be linear or curved. 11 and 12 show such examples. At least one of the antennas (collectively referred to as 522) is adapted to receive one or more targets. 11 and 12, the arm support assembly 508 may extend along the length of the arm support assembly 508. The length of the antenna 522 is such that it extends along the axis of rotation 516 of the drum 514 and includes one or more target support axes. The target support assembly 508 is longer than the target support assembly 508 and is supported by one or more target support assemblies 508. This generates a plasma 520 that extends over the target. Thus, the antenna 522 may vary in length from one or more target support assemblies.

[0116] The above examples should be understood as illustrative examples. Further examples are envisioned. For example, any These example features can be combined to create more complex patterns of material deposited on the substrate. It should be understood that the present invention may be combined with other target support assemblies, for example, by using one or more target support assemblies. By using the The sputter deposition apparatus according to the embodiments described herein may comprise stripes of different materials, combinations of materials, or layers of different materials. Absence and / or use to create a variety of different sized stripes and / or separate stripes It can be done.

[0117] Figures 1 to 4 and 11 and 12 show two example antenna arrangements. There are various other antenna arrays (or plasma generating arrays) that are used to generate For example, the antenna 122 shown in FIG. may be thought of as roughly half-moon shaped. However, in other cases, similar antennas may be used in a circular shape rather than a half-moon shape. In such a case, e.g. A circular antenna having the same or similar radius of curvature as the antenna shown in FIG. The nozzles 122a, 122b may be similar to but differently shaped and disposed on either side of the drum. In this case, two antennas (such as two circular antennas) are located on the same side of the drum. Alternatively, two antennas may be placed on either side of the drum. In this case, there are multiple elongated antennas similar to the antenna 522 shown in FIG. The elongated antennas may be spaced around the curved member, e.g., at regular intervals. In such a case, the elongated antenna may be positioned at intervals to target one or more targets. Between the target support assembly and the conveyor system, e.g., supported by the target support assembly The target may be spaced apart in a ladder-like fashion between the drum and the target being held.

[0118] Any feature described in connection with any one example may be used alone or in combination with other features described. They may be used in combination with one or more features of any of the other examples or any of the other examples. It should be understood that the above-described methods may be used in combination. Non-limiting equivalents and modifications may also be used without departing from the scope of the appended claims. good.

Claims

1. 1. A sputter deposition apparatus comprising: a plasma for sputter depositing a target material within the sputter deposition region; a remote plasma generating array arranged as follows: configured to provide a confining magnetic field that substantially confines the plasma to the sputter deposition region. a confinement array; a substrate provided within a sputter deposition region; one or more sputter deposition zones for effecting sputter deposition of target material onto a substrate; one or more target support assemblies arranged to support the target; 、 During use, depositing a target material onto a substrate as a first region; depositing a target material onto the substrate as a second region; The confinement arrangement is such that there is no target material in the intermediate region between the first and second regions. A sputter deposition apparatus in which the array confines a remote plasma to a target support assembly.

2. A conveyor system conveys material from a first side of the sputter deposition area to a second side of the sputter deposition area. It is positioned to transport the board to the side, One or more target support assemblies are configured to support at least a first target. a first target support assembly disposed on the substrate, and a second target support assembly disposed on the substrate; a second target support assembly arranged to a gap extending from a first side of the sputter deposition region to a second side of the sputter deposition region; exists between the first target support assembly and the second target assembly, 2. The sputter deposition apparatus of claim 1.

3. The gap is elongated along the conveying direction, the first target support assembly is elongated along the conveying direction; or the second target support assembly is elongated along the conveying direction; or The sputter deposition apparatus of claim 2 , wherein the first and second electrodes are connected to each other.

4. A conveyor system moves the deposition area from a first location in the deposition area to a second location in the deposition area. arranged to convey the substrate therethrough; One or more target support assemblies are positioned at a first location such that deposition onto the second portion is initiated. by one target but not by a second target, at a second location In the method, the deposition on the second portion is by a second target, and the deposition on the first target is by a second target. The first target and the second target are arranged to support each other so that the first target and the second target are not 3. The sputter deposition apparatus of claim 2.

5. Within the sputter deposition region, substantially in the plane of the transport direction, but along an axis perpendicular to the transport direction. one or more target support assemblies so that the second target is offset from the first target.

3. The method according to claim 2, wherein a bridge is arranged to support the first target and the second target. The sputter deposition apparatus described herein.

6. The axis is the first axis, Within the sputter deposition region, the second target is offset from the first target along the transport direction. One or more target support assemblies support the first target and the second target.

6. The sputter deposition apparatus of claim 5, wherein the sputter deposition apparatus is arranged to support a

7. At least one of the first target and the second target is oblique to the conveying direction. One or more target support assemblies support the first and second targets so that they are aligned at an angle.

7. The sputter stack of claim 2, arranged to support a target. stacking device.

8. A first target magnetic element associated with the first target and a second target magnetic element associated with the second target.

8. The sputtering device of claim 2, further comprising a second target magnetic element. Deposition equipment.

9. a first target magnetic element for controlling sputter deposition of material on the first target; a first magnetic field applied to the a second target magnetic element for controlling sputter deposition of material on the second target; a controller configured to control at least one of the first magnetic field and the second magnetic field applied to the second magnetic field. The sputter deposition apparatus of claim 8 , comprising:

10. one or more target support assemblies; supporting the first target between the first target magnetic element and the conveyor system; Or, supporting a second target between the second target magnetic element and the conveyor system; The sputter deposition method according to claim 8 or 9, wherein the deposition is arranged to satisfy at least one of the following conditions: Device.

11. 11. The method according to claim 2, wherein the material of the first target is different from the material of the second target. The sputter deposition apparatus according to any one of claims 1 to 4.

12. The plasma generating device comprises one or more elongated antennas elongated along the conveying direction. Item 12. The sputter deposition apparatus according to any one of items 2 to 11.

13. a conveyor system arranged to convey the substrate along a curved path; 13. The method of claim 12, wherein the one or more elongated antennas are curved in the same direction as the curvature of the curved path. The sputter deposition apparatus described herein.

14. a confining magnetic field that substantially confines the plasma to a sputter deposition region; a confinement arrangement arranged to provide sputter deposition of material; The confinement array comprises at least one confinement magnetic element elongated along the transport direction.

14. A sputter deposition apparatus according to any one of claims 2 to 13.

15. The confinement array comprises at least one further confining element elongated in a direction substantially perpendicular to the conveying direction. The sputter deposition apparatus of claim 14 comprising a confining magnetic element.

16. One or more targets are positioned while the conveyor system transports the substrate through the sputter deposition area. One or more target support assemblies support one or more targets without any intervening elements between the target and the substrate.

16. The sputtering device of claim 2, arranged to support a get. Deposition equipment.

17. the conveyor system comprises rollers arranged to convey the substrate in a conveying direction; 17. Any one of claims 2 to 16, wherein the conveying direction is substantially perpendicular to the rotation axis of the rollers. The sputter deposition apparatus according to claim 1.

18. the conveyor system comprises a curved member; The one or more target support assemblies are configured to substantially conform to the curvature of at least a portion of the curved member.

18. A method according to any one of claims 2 to 17, arranged to support one or more targets. The sputter deposition apparatus described herein.

19. At least one surface of the one or more targets facing the conveyor system is curved.

21. The sputter deposition apparatus of claim 2, wherein

20. 1. A method for sputter depositing a target material onto a substrate, comprising: providing a plasma within the sputter deposition region; As the substrate is transported through the sputter deposition region, depositing a first region on a first portion of a substrate; depositing a second region on a second portion of the substrate; The sputter deposit is formed so that there is no target material in the intermediate region between the first and second regions. The position of one or more targets relative to the deposition area allows for sputter deposition of target material onto the substrate. conveying the substrate in a conveying direction through a sputter deposition region to produce a deposition; The first stripe may be made of a target material of a different density than the second stripe or a target material of a different composition than the second stripe. EP 1 137 263 A1 2 5 10 15 20 25 30 35 40 45 50 55 sputter depositing a target material onto a substrate including at least one get material Law.

21. sputter depositing material from a first target as a first region onto a first portion of a substrate; and sputtering a second target material onto a second portion of the substrate as a second region. depositing The second region is made of material of the first target that is less dense than the material in the first stripe and more dense than the material in the third stripe. a second target material of lower density, or The second region is substantially free of the material of the first target and the material of the second target.

23. The method of claim 22, wherein the method is at least one of:

22. Transporting the substrate A spatter substantially overlapping a first portion of the target having a first length along the conveying direction. conveying a first portion of the substrate within a first region of the deposition region; A second portion of the target having a second length along the transport direction is substantially overlapped by the spatter. conveying a second portion of the substrate within a second region of the deposition region; 21. The method of claim 20, wherein the first length is different from the second length.

23. Transporting the substrate a second target on the substrate within a first region of the sputter deposition area that substantially overlaps the first target; Transporting the parts; Subsequently, a second region of the sputter deposition zone substantially overlapping the second target is sputtered onto the substrate. and conveying the second portion.

24. The first target is elongated along the conveying direction, The method comprises substantially converting a portion of the plasma into a plasma having a thickness such that the portion of the plasma is elongated along a transport direction.

24. The method of any one of claims 20 to 23, comprising actively confining the

25. During transport of the substrate, a first magnetic field associated with the first target and a second magnetic field associated with the second target are generated. generating a second magnetic field, 25. The method of any one of claims 20 to 24, wherein the first magnetic field is different from the second magnetic field.

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