Reaction vessel

Abstract

To provide a reaction vessel which has a simple constitution and is easily miniaturized.SOLUTION: The reaction vessel 10 is for supplying a fluid F to treat a substrate S, and basically includes a substrate holder 20, a stacked block 12, and a connection means 60. The fluid F may be only a liquid, only a gas, or a mixture of a liquid and a gas. The substrate holder 20 holds the substrate S. The laminated block 12 is formed by laminating a plurality of plate-like blocks having both flat surfaces. The connecting means 60 maintains the shape of the laminated block 12 by connecting the plurality of blocks. On the surface of at least one block constituting the stacked block 12, a groove serving as a flow path of the fluid F and a recess for accommodating the substrate holder 20 are formed.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a reaction vessel for performing surface treatment (for example, cleaning, film formation, etching, etc.) on a substrate such as a semiconductor wafer. [Background technology]

[0002] An example of a typical semiconductor manufacturing process is as follows: semiconductor wafer → cleaning → film formation → cleaning → resist coating → exposure and development → etching → resist stripping → cleaning → inspection and assembly. A known type of equipment used in these processes is a single-wafer reactor, which processes semiconductor wafers one by one. For example, a single-wafer reactor is designed so that a single semiconductor wafer is placed into the chamber from above, and while the semiconductor wafer is rotated on a horizontal plane, a cleaning solution is poured onto the semiconductor wafer from a nozzle above (see, for example, Patent Document 1). Note that the term "reactor" used in this specification is a general term for cleaning equipment, film formation equipment, etching equipment, resist coating and stripping equipment, etc. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2002-151455 Summary of the Invention [Problem to be solved by the invention]

[0004] However, conventional single-wafer reactors have the problem of being large and complex in structure. For example, the aforementioned cleaning equipment has a cylindrical stainless steel chamber with a wafer loading / unloading mechanism and a cleaning liquid supply mechanism attached above it, and a wafer rotation mechanism attached below it.

[0005] The present invention has been made in view of the above circumstances, and has an object to provide a reaction vessel that is simple in configuration and can be easily miniaturized. [Means for solving the problem]

[0006] The reaction vessel of the present invention is a reaction vessel for processing a substrate by supplying a liquid or gaseous fluid, and is characterized in that it comprises a substrate holder for holding the substrate, a stacked block consisting of a plurality of plate-shaped blocks each having flat surfaces, and a connecting means for connecting the plurality of blocks, wherein a groove serving as a flow path for the fluid is formed on the surface of at least one of the plurality of blocks, and a recess for accommodating the substrate holder is formed on the surface of at least one of the plurality of blocks.

[0007] As a result, a reaction vessel can be obtained simply by processing grooves or recesses in the surface of a plate-shaped block, stacking multiple blocks, and connecting these blocks with a connecting means, which makes the structure simpler, easier to miniaturize, and easier to manufacture than conventional single-wafer reaction vessels. Since cutting methods, which facilitate high-precision processing, can be used to process the blocks, the manufacturing cost is low regardless of the block material. The fluid may be either a liquid or a gas, or a mixture of a liquid and a gas.

[0008] According to an aspect of the reaction vessel of the present invention, when both surfaces of the block are upper and lower surfaces, it is preferable that the stacked block has an upper block and a lower block as the plurality of blocks, and is stacked so that the lower surface of the upper block faces the upper surface of the lower block, the recess is formed on the lower surface of the upper block or the upper surface of the lower block, a gas / liquid supply groove which serves as a flow path for the fluid and communicates with the recess is formed on the lower surface of the upper block, a gas / liquid supply hole which communicates with the gas / liquid supply groove is formed on the upper surface of the upper block, a gas / liquid discharge groove which serves as a flow path for the fluid and communicates with the recess is formed on the upper surface or the lower surface of the lower block, and a gas / liquid discharge hole which communicates with the gas / liquid discharge groove is formed on the lower surface of the lower block.

[0009] The recess may be formed only on the lower surface of the upper block, only on the upper surface of the lower block, or on both the lower surface of the upper block and the upper surface of the lower block. Fluid entering the reaction vessel through the gas / liquid supply hole on the upper surface of the upper block passes through the gas / liquid supply groove on the lower surface of the upper block and reaches the recess in which the substrate holder is housed. The fluid that reaches the recess is used to process the substrate held by the substrate holder, passes through the gas / liquid discharge groove on the upper or lower surface of the lower block, and exits the reaction vessel through the gas / liquid discharge hole on the lower surface of the lower block. This allows for a simple configuration of the reaction vessel, in which fluid is introduced through the upper surface of the stacked block to process the substrate and discharged from the lower surface of the stacked block. In this specification, the vertical direction is referred to as "down," the opposite direction is referred to as "up," and the direction perpendicular to the vertical direction is referred to as "horizontal."

[0010] According to an aspect of the reaction vessel of the present invention, the substrate holder holds the substrate with at least one of its two surfaces exposed, and it is preferable that the upper block or the lower block has an opening that faces the exposed surface of the substrate and penetrates through the upper and lower surfaces, and that the upper block or the lower block has a quartz plate that covers the opening.

[0011] Hereinafter, the upper block or the lower block may simply be referred to as the block. When the substrate holder holds a substrate, only the top surface of the substrate may be exposed, only the bottom surface of the substrate may be exposed, or both surfaces of the substrate may be exposed. An opening is formed in the block facing the exposed surface of the substrate, and the opening is covered with a quartz plate. This allows the quartz plate to be translucent, enabling treatment by irradiating the substrate with infrared or ultraviolet light through the quartz plate. Examples include heat treatment using infrared irradiation, and photo-CVD or photo-etching using ultraviolet irradiation. Furthermore, if the block is made of an insulating and non-magnetic material such as synthetic resin, the quartz plate is also insulating and non-magnetic, allowing heat treatment of the substrate using high-frequency induction heating. Furthermore, the translucency of the quartz plate allows the substrate treatment process to be observed visually or with a camera from outside the reaction vessel.

[0012] According to an aspect of the reaction vessel of the present invention, a step portion of a certain depth into which the quartz plate is fitted is formed on the lower surface of the lower block, and the gas / liquid discharge groove formed in the lower block includes a tunnel portion formed inside the lower block, and the tunnel portion has a bottom surface that extends from the upper surface of the quartz plate fitted in the step portion to the gas / liquid discharge hole, and it is preferable that the bottom surface is at a height equal to or lower than the upper surface of the quartz plate.

[0013] The lower surface of the lower block is formed with an opening and a stepped portion of a certain depth surrounding the opening, and a quartz plate is fitted into this stepped portion, covering the opening from below. A tunnel portion is formed inside the lower block, with its bottom surface extending from the upper surface of the quartz plate fitted into the stepped portion to the gas / liquid discharge hole. Since the bottom surface of the tunnel portion is at the same height as or lower than the upper surface of the quartz plate, any fluid remaining on the upper surface of the quartz plate passes through the tunnel portion under its own weight and exits through the gas / liquid discharge hole on the lower surface of the lower block. This allows the fluid remaining on the quartz plate to be easily discharged without tilting the reaction vessel or using a pump to suction it out.

[0014] According to this aspect of the reaction vessel of the present invention, it is preferable that a linear protrusion is formed on the upper block or the lower block so as to surround the opening, and the opening is sealed by the quartz plate pressing against the protrusion.

[0015] The block is formed with an opening and a linear protrusion surrounding the opening. In other words, the protrusion extends linearly around the opening in a plan view. Therefore, when the quartz plate is fixed with the protrusion pressing against it, the opening is sealed. In other words, the protrusion functions as an O-ring. Therefore, instead of using an O-ring, the block can be machined to form the protrusion, which reduces the number of parts and further simplifies the configuration.

[0016] According to an aspect of the reaction vessel of the present invention, it is preferable that a holder insertion / removal port is formed on the side of the stacked block, which is the surface connecting the upper surface of the upper block and the lower surface of the lower block, and allows the substrate holder to be freely inserted and removed from the recess.

[0017] By inserting and removing the substrate holder horizontally from the side of the stacking block, the substrate can be handled more easily than when it is inserted and removed vertically because gravity is not resisted. This configuration is effective in dealing with the increasing size of substrates in recent years.

[0018] According to an aspect of the reaction vessel of the present invention, it is preferable that the gas / liquid supply groove comprises a groove-shaped Venturi flow path having a throat portion with the smallest flow path cross-sectional area between a flow path contraction portion where the flow path cross-sectional area is reduced and a flow path expansion portion where the flow path cross-sectional area is expanded, and that the gas / liquid supply hole comprises a gas supply hole communicating with the throat portion.

[0019] In the Venturi flow channel, gas supplied from the gas supply hole is mixed with the liquid, and the liquid passes through the narrowest throat at a speed approaching the speed of sound. This generates shock waves that cause bubbles to collapse, resulting in a microbubble liquid containing fine bubbles downstream of the throat. A Venturi flow channel with this function can be formed simultaneously during the process of forming the gas-liquid supply groove on the underside of the upper block. [Effects of the Invention]

[0020] The reaction vessel of the present invention is constructed by simply processing grooves and recesses into the surface of plate-shaped blocks and stacking multiple blocks together. Therefore, compared to conventional single-wafer reaction vessels, the construction is simpler, it is easier to miniaturize, and it can be manufactured more easily. [Brief explanation of the drawings]

[0021] [Figure 1] FIG. 1[A] is a cross-sectional view showing the reaction container of this embodiment, and FIG. 1[B] is a cross-sectional view showing the reaction container of this embodiment in use. [Figure 2] FIG. 2 is an exploded cross-sectional view showing the reaction vessel of the present embodiment. [Figure 3] 3[A1], 3[A2] and 3[A3] are partial cross-sectional views showing a method for forming a tunnel portion in the reaction vessel of this embodiment, and FIG. 3[B] is a partial cross-sectional view showing a modified example of the reaction vessel of this embodiment. [Figure 4] FIG. 2 is an exploded perspective view showing the reaction vessel of the present embodiment. [Figure 5] FIG. 2 is an exploded perspective view showing the reaction vessel of the present embodiment turned upside down. [Figure 6] 6A and 6B are perspective views showing how to use the reaction vessel of this embodiment, in which FIG. 6[A] shows the state before the substrate holder is placed in the reaction vessel, and FIG. 6[B] shows the state after the substrate holder is placed in the reaction vessel. [Figure 7] FIG. 7[A] is a plan view showing the upper block of the reaction vessel of this example, and FIG. 7[B] is a cross-sectional view taken along line 7B-7B in FIG. 7[A]. [Figure 8] FIG. 8[A] is a plan view showing the lower block and substrate holder in the reaction vessel of this embodiment, and FIG. 8[B] is a cross-sectional view taken along line 8B-8B in FIG. 8[A]. [Figure 9] This shows a method for forming a tunnel portion in the reaction vessel of this embodiment, with Figures 9[A1] and 9[A2] being partial plan views, Figure 9[B1] being a cross-sectional view taken along line 9B1-9B1 in Figure 9[A1], and Figure 9[B2] being a cross-sectional view taken along line 9B2-9B2 in Figure 9[A2]. [Figure 10] This shows a method for forming a tunnel portion in the reaction vessel of this embodiment, with Figures 10[A1] and 10[A2] being partial plan views, Figure 10[B1] being a cross-sectional view taken along line 10B1-10B1 in Figure 10[A1], and Figure 10[B2] being a cross-sectional view taken along line 10B2-10B2 in Figure 10[A2]. [Figure 11] This shows a method for forming a tunnel portion in the reaction vessel of this embodiment, with Figures 11[A1] and 11[A2] being partial plan views, Figure 11[B1] being a cross-sectional view taken along line 11B1-11B1 in Figure 11[A1], and Figure 11[B2] being a cross-sectional view taken along line 11B2-11B2 in Figure 11[A2]. [Figure 12]12A is a partial plan view showing the relationship between the tunnel portion and the lower quartz plate in the reaction vessel of this embodiment, and FIG. 12B is a cross-sectional view taken along line 12B-12B in FIG. 12A. [Figure 13] 13A and 13B are schematic diagrams showing modified examples of the reaction vessel of this embodiment, in which FIG. 13[A] shows the state in which the substrate holder is inserted into the reaction vessel, FIG. 13[B] shows the state in which the substrate holder is removed from the reaction vessel, and FIG. 13[C] shows the state in which the substrate is removed from the substrate holder. DETAILED DESCRIPTION OF THE INVENTION

[0022] <Embodiment> 1[A] and 1[B] show cross sections of the reaction vessel 10 of this embodiment after assembly, and FIG. 2 shows a cross section before assembly. In these figures, the reaction vessel 10 has a bilaterally symmetrical structure, so when the same parts are on the left and right, only one of them is referenced. Also, FIG. 1[B] shows the state in use, and some reference numerals are omitted.

[0023] As shown in Figures 1 and 2, the reaction vessel 10 is used to supply a fluid F to process a substrate S, and basically comprises a substrate holder 20, a stacked block 12, and a connecting means 60. The fluid F may be liquid only, gas only, or a mixture of liquid and gas. The substrate holder 20 holds the substrate S. The stacked block 12 is formed by stacking multiple plate-shaped blocks having flat surfaces. The connecting means 60 connects the multiple blocks together to maintain the shape of the stacked block 12. As will be described later, a groove that serves as a flow path for the fluid F and a recess for accommodating the substrate holder 20 are formed on the surface of at least one of the blocks that make up the stacked block 12. The block in which the groove is formed and the block in which the recess is formed may be the same or different.

[0024] Here, both surfaces of a block are referred to as the upper surface and the lower surface. The stacked block 12 in this embodiment has two blocks, an upper block 30 and a lower block 40, which are stacked so that the lower surface 32 of the upper block 30 faces the upper surface 41 of the lower block 40. A recess 16 for accommodating the substrate holder 20 is formed in the upper surface 41 of the lower block 40. A gas / liquid supply groove 33, which serves as a flow path for the fluid F and communicates with the recess 16, is formed in the lower surface 32 of the upper block 30, and a gas / liquid supply hole 34, which communicates with the gas / liquid supply groove 33, is formed in the upper surface 31. The lower block 40 has a gas / liquid discharge groove 43, which serves as a flow path for the fluid F and communicates with the recess 16, and a gas / liquid discharge hole 44, which communicates with the gas / liquid discharge groove 43, formed in the lower surface 42.

[0025] The substrate holder 20 holds the substrate S with both surfaces of the substrate S, i.e., the upper surface S1 and the lower surface S2, exposed. An opening 35 is formed in the upper block 30, penetrating the upper surface 31 and the lower surface 32 in the stacking direction. The opening 35 faces the upper surface S1 of the substrate S. An opening 45 is formed in the lower block 40, penetrating the upper surface 41 and the lower surface 42 in the stacking direction. The opening 45 faces the lower surface S2 of the substrate S. The upper side of the opening 35 is covered by an upper quartz plate 51, and the lower side of the opening 45 is covered by a lower quartz plate 52.

[0026] A step 46 is formed on the lower surface 42 of the lower block 40 to surround the opening 45. The step 46 has a constant depth, and the lower quartz plate 52 is fitted into the step 46. The gas / liquid discharge groove 43 formed in the lower block 40 includes a tunnel 47 formed inside the lower block 40. The tunnel 47 has a bottom surface 47x that extends from the upper surface 521 of the lower quartz plate 52 within the step 46 to the gas / liquid discharge hole 44. The bottom surface 47x is at a height equal to or lower than the upper surface 521 of the lower quartz plate 52.

[0027] Next, each component will be described in detail. The substrate S used in this embodiment is a disk-shaped semiconductor wafer. The substrate S is not limited to a disk shape, and may be a square plate shape, etc. The fluid F is a cleaning liquid, a drying gas, an etching liquid or gas, a film-forming liquid or gas, etc. The substrate holder 20 is a square plate made of a synthetic resin such as PTFE, and has a circular opening 25 formed in the center to match the shape of the substrate S. The opening 25 penetrates both sides of the substrate holder 20, and a semicircular protrusion 23 is formed within the opening 25. By placing the substrate S on the protrusion 23, the substrate holder 20 holds the substrate S with the upper surface S1 and the lower surface S2 of the substrate S exposed.

[0028] The upper block 30 is a rectangular plate made of synthetic resin such as PTFE, and has a circular opening 35 formed in the center to match the shape of the substrate S. In addition to the opening 35, the upper block 30 also has a gas / liquid supply groove 33, a gas / liquid supply hole 34, and a step 36. The gas / liquid supply groove 33 and the gas / liquid supply hole 34 serve as paths for the fluid F supplied to the substrate S. The cross section perpendicular to the flow direction of the fluid F is easy to process, so the gas / liquid supply groove 33 is rectangular and the gas / liquid supply hole 34 is circular. The gas / liquid supply hole 34 has an internal thread (not shown) for connecting a threaded joint. The number of gas / liquid supply grooves 33 and gas / liquid supply holes 34 may be any number as long as it is one or more. The upper quartz plate 51 is circular to match the shape of the substrate S. Since the gas / liquid supply hole 34 has an internal thread, the gas / liquid supply hole 34 is formed at a position away from the upper quartz plate 51. The step portion 36 is a circular recess into which the upper quartz plate 51 is fitted to seal the opening 35, and has a depth corresponding to the thickness of the upper quartz plate 51 and an inner diameter corresponding to the outer diameter of the upper quartz plate 51.

[0029] The lower block 40, like the upper block 30, is a rectangular plate made of synthetic resin such as PTFE, and has a circular opening 45 formed in its center to fit the shape of the substrate S. In addition to the opening 45, the lower block 40 is also formed with a gas / liquid discharge groove 43, gas / liquid discharge holes 44, a step portion 46, and a recess 16. The gas / liquid discharge groove 43 and the gas / liquid discharge hole 44 serve as paths for the fluid F supplied to the substrate S. The cross section perpendicular to the flow direction of the fluid F is easy to process, so the gas / liquid discharge groove 43 is rectangular and the gas / liquid discharge hole 44 is circular. The gas / liquid discharge hole 44 has an internal thread (not shown) for connecting a threaded joint. The number of gas / liquid discharge grooves 43 and gas / liquid discharge holes 44 may be any number as long as they are one or more. The lower quartz plate 52 is circular to fit the shape of the substrate S. Since an internal thread is formed in the gas / liquid discharge hole 44, the gas / liquid discharge hole 44 is formed at a position separated from the lower quartz plate 52. The step portion 46 is an annular recess into which the lower quartz plate 52 is fitted to seal the opening 45, and has a depth corresponding to the thickness of the lower quartz plate 52 and an inner diameter corresponding to the outer diameter of the lower quartz plate 52.

[0030] As described above, the lower block 40 has substantially the same structure as the upper block 30, but the lower block 40 has a recess 16 formed therein. The recess 16 is a space for accommodating the substrate holder 20, and is a flat, rectangular parallelepiped space that fits the square-plate-shaped substrate holder 20. In other words, the recess 16 has internal dimensions that correspond to the external dimensions of the substrate holder 20. The recess 16 may be formed in the upper block 30, or a portion of the recess 16 may be formed in the lower block 40 and the remainder in the upper block 30.

[0031] In this embodiment, the upper block 30 is provided with an opening 35 and an upper quartz plate 51, and the lower block 40 is provided with an opening 45 and a lower quartz plate 52. However, the opening and the quartz plate may be provided in only one of the two blocks as needed, or may not be provided in either block if processing of the substrate S with light is not required.

[0032] The connecting means 60 includes, for example, an upper plate 61, a lower plate 62, a bolt 67, and a nut 68. The upper plate 61 and the lower plate 62 are made of a metal such as stainless steel or aluminum. Circular openings 63 and 64 are formed in the upper plate 61 and the lower plate 62 to match the shapes of the upper quartz plate 51 and the lower quartz plate 52, respectively, and through-holes 65 and 66 are formed in the upper plate 61 and the lower plate 62 to match the positions of the gas / liquid supply hole 34 and the gas / liquid discharge hole 44, respectively. The upper quartz plate 51, the upper block 30, the lower block 40, and the lower quartz plate 52 are stacked between the upper plate 61 and the lower plate 62. An insertion hole 69 is drilled in the upper plate 61, the upper block 30, the lower block 40, and the lower plate 62. A bolt 67 passes through the insertion hole 69, and a nut 68 is threaded onto the tip of the bolt 67. This fastens the upper plate 61 and the lower plate 62 together.

[0033] Next, a method for manufacturing the reaction vessel 10 will be described mainly with reference to FIG. 2. First, two square plates made of synthetic resin such as PTFE are prepared. The surface of one of the plates is processed to form an opening 35, a gas / liquid supply groove 33, a gas / liquid supply hole 34, and a step portion 36, which becomes the upper block 30. The surface of the remaining plate is similarly processed to form an opening 45, a gas / liquid discharge groove 43, a tunnel portion 47 (described below), a gas / liquid discharge hole 44, a step portion 46, and a recess 16, which becomes the lower block 40. These processes can be performed using a cutting method using a machining center, which facilitates high-precision processing. The substrate holder 20 can also be manufactured using a similar method.

[0034] Next, the reaction vessel 10 is assembled by preparing the upper plate 61, the lower plate 62, the upper quartz plate 51, the lower quartz plate 52, the bolts 67, and the nuts 68. First, the upper quartz plate 51, the upper block 30, the lower block 40, and the lower quartz plate 52 are sandwiched between the upper plate 61 and the lower plate 62. Then, the bolts 67 are inserted into the insertion holes 69 drilled in the upper plate 61, the upper block 30, the lower block 40, and the lower plate 62, and the nuts 68 are screwed onto the ends of the bolts 67. The bolts 67 are then rotated to fasten the upper plate 61 and the lower plate 62 together. This completes the assembly of the reaction vessel 10. The configuration of the connecting means 60 allows for easy disassembly and assembly, which is convenient for cleaning, adjustment, and part replacement. Note that adhesives or the like may be used in place of or in addition to these components for the connecting means 60.

[0035] Two examples of methods for forming the tunnel portion 47 of the lower block 40 will now be described. The first example will be described with reference to FIGS. 3[A1] and 3[A3]. First, as shown in FIG. 3[A1], the upper surface 41 and the lower surface 42 of the lower block 40 are machined to form grooves 43a that will become the gas / liquid discharge grooves 43 and holes 44a that will become the gas / liquid discharge holes 44, and the upper surface 41 is machined to form the cutout portion 40a. Simultaneously, the fitting block 40b is prepared. The cutout portion 40a is, for example, a rectangular parallelepiped space, and the fitting block 40b is a rectangular parallelepiped of a size corresponding to the cutout portion 40a. Then, the lower surface 42b of the fitting block 40b is machined to form a groove 47b that will become the tunnel portion 47. Finally, by fitting the fitting block 40b into the cutout portion 40a, the upper surface 41b of the fitting block 40b and the upper surface 41 of the lower block 40 become flush with each other, and the fitting block 40b is integrated with the lower block 40 as shown in Fig. 3[A3], thereby forming the gas / liquid discharge groove 43, the gas / liquid discharge hole 44, and the tunnel portion 47. For example, press fitting or bonding is used for this fitting.

[0036] The second example will be described with reference to FIGS. 3[A2] and 3[A3]. In the first example, groove 47b, which will become tunnel portion 47, is formed in fitting block 40b, whereas in the second example, groove 47c, which will become tunnel portion 47, is formed in lower block 40. First, as shown in FIG. 3[A2], the upper surface 41 and the lower surface 42 of lower block 40 are machined to form groove 43c, which will become gas-liquid discharge groove 43, and the upper surface 41 is machined to form groove 47c, which will become tunnel portion 47, and then a cutout portion 40c is formed above that. Concurrently, fitting block 40d is prepared. Cutout portion 40c is, for example, a rectangular parallelepiped space, and fitting block 40d is a rectangular parallelepiped of a size corresponding to cutout portion 40c. Then, by fitting the fitting block 40d into the cutout portion 40c, the upper surface 41d of the fitting block 40d and the upper surface 41 of the lower block 40 become flush with each other, and the fitting block 40d is integrated with the lower block 40 as shown in Fig. 3[A3], forming the gas / liquid discharge groove 43 and the tunnel portion 47, and finally drilling the gas / liquid discharge hole 44. For this fitting, for example, press fitting or bonding is used.

[0037] Next, a method of using the reaction vessel 10 will be described mainly with reference to FIG. 1[B]. First, a fluid supply pipe (not shown) is connected to the gas / liquid supply hole 34 via a threaded joint. Similarly, a fluid discharge pipe (not shown) is connected to the gas / liquid discharge hole 44 via a threaded joint. These pipes are equipped with manual or electromagnetic valves that can be opened and closed as desired. When the valve on the fluid supply pipe is opened, fluid F is supplied into the reaction vessel 10 through the gas / liquid supply hole 34 on the upper surface 31 of the upper block 30. The fluid F that has entered the reaction vessel 10 passes through the gas / liquid supply groove 33 on the lower surface 32 of the upper block 30 and reaches the recess 16 in which the substrate holder 20 is accommodated. The fluid F that has reached the recess 16 is used to process the substrate S held by the substrate holder 20, passes through the gas / liquid discharge groove 43 and the tunnel section 47 on the lower surface 42 of the lower block 40, and exits the reaction vessel 10 through the gas / liquid discharge hole 44 on the lower surface 42 of the lower block 40.

[0038] At this time, lamps 53, 54 may be provided outside the reaction vessel 10 so as to face the upper quartz plate 51 and the lower quartz plate 52. The lamps 53, 54 are, for example, infrared lamps or ultraviolet lamps. The infrared or ultraviolet light emitted from the lamps 53, 54 passes through the upper quartz plate 51 and the lower quartz plate 52 and reaches the upper surface S1 and the lower surface S2 of the substrate S. As a result, the processing of the substrate S is promoted by the infrared or ultraviolet light.

[0039] Next, the effects of the reaction vessel 10 will be described. [1] The reaction vessel 10 is constructed by simply processing grooves and recesses into the surfaces of plate-shaped blocks such as the upper block 30 and the lower block 40 and stacking these blocks. Therefore, compared to conventional single-wafer reaction vessels, the construction is simpler, it is easier to miniaturize, and it is easier to manufacture. [2] When the upper block 30 and the lower block 40 are stacked to form the stacked block 12, the reaction vessel 10 can be provided with a simple two-block construction, in which the fluid F is introduced from the upper surface 31 of the stacked block 12 to process the substrate S and the fluid F is discharged from the lower surface 42 of the stacked block 12. [3] When an opening 35 is formed in the upper block 30 and covered with the upper quartz plate 51, or when an opening 45 is formed in the lower block 40 and covered with the lower quartz plate 52, the upper quartz plate 51 or the lower quartz plate 52 is translucent, making it possible to irradiate the substrate S with infrared or ultraviolet light through the upper quartz plate 51 or the lower quartz plate 52. Furthermore, quartz plates have excellent heat resistance, making them suitable for high-temperature processing of the substrate S. [4] When a tunnel section 47 is formed inside the lower block 40, the fluid F (liquid) remaining on the lower quartz plate 52 flows out of the gas-liquid discharge hole 44 through the tunnel section 47 due to its own weight, making it easy to discharge the fluid F remaining on the lower quartz plate 52.

[0040] Finally, a modified example of the reaction vessel 10 will be described with reference to FIG. 3[B]. In the above-described embodiment, the gas / liquid discharge groove 43 is formed on the lower surface 42 of the lower block 40. However, as in this modified example, the gas / liquid discharge groove 43e may be formed on the upper surface 41 of the lower block 40. In this case, there is no problem if the fluid F is a gas. However, if the fluid F is a liquid, the fluid F will remain on the lower quartz plate 52. Therefore, the fluid F remaining on the lower quartz plate 52 is discharged by, for example, tilting the reaction vessel 10. Furthermore, the gas / liquid discharge groove 43e is positioned so as not to come into contact with the gas / liquid supply groove 33 in the upper block 30, in order to avoid communication with the gas / liquid supply groove 33.

[0041] <Example> An example that further embodies the above-described embodiment will be described with reference to Figures 4 to 6. However, in this example, parts that are substantially the same as those in the above-described embodiment will be designated by the same reference numerals, and duplicate explanations will be omitted. In each figure, if there are multiple identical parts, only one of them will be designated by the reference numeral. Also, although the connection means 60 is not shown in Figures 4 to 6, it is assumed that the connection means 60 is also present in this example.

[0042] 4, the reaction vessel 10 of this embodiment has a structure in which, from top to bottom, an upper quartz plate 51, an upper block 30, a substrate holder 20, a lower block 40, and a lower quartz plate 52 are stacked. The upper block 30 and the lower block 40 are stacked to form the stacked block 12. The lower quartz plate 52 and the upper quartz plate 51 are disk-shaped, and the remaining plates are square-shaped.

[0043] The upper surface 31 of the upper block 30 has a circular opening 35 in the center and an annular stepped portion 36 surrounding the opening 35. An upper quartz plate 51 is fitted into the stepped portion 36 to seal the opening 35. Six gas / liquid supply holes 34 and two gas supply holes 39 are also formed in the upper surface 31 of the upper block 30. A circular opening 25 is formed in the center of the square plate-shaped substrate holder 20, and four semicircular or flat semiconical protrusions 23 (only one is shown) are formed in the opening 25.

[0044] The upper surface 41 of the lower block 40 is formed with a recess 16 consisting of a square plate-shaped space in the center, and a gas / liquid discharge groove (not shown) around the recess 16. An opening 45 is formed in the bottom surface of the recess 16. The substrate holder 20 fits snugly into the recess 16. One side of the recess 16 is open, which serves as the holder loading / unloading port 14. When the substrate holder 20 is inserted into the recess 16 through the holder loading / unloading port 14, the holder loading / unloading port 14 is sealed by a pressure plate 70. The pressure plate 70 consists of a first pressure plate 71 that contacts the stacked block 12 and a second pressure plate 72 that supports the first pressure plate 71. The stacked block 12, the substrate holder 20, and the first pressure plate 71 are made of a synthetic resin such as PTFE, and the second pressure plate 72 is made of a metal such as stainless steel or aluminum.

[0045] The exploded perspective view of Figure 5 shows the reaction vessel 10 turned upside down. Similar to the upper surface 31 of the upper block 30 described above, the lower surface 42 of the lower block 40 has a circular opening 45 in the center and an annular stepped portion 46 surrounding the opening 45. The opening 45 is sealed by fitting a lower quartz plate 52 into the stepped portion 46. In addition, two gas / liquid discharge holes 44 are formed in the lower surface 42 of the lower block 40.

[0046] A gas / liquid supply groove (not shown) is formed on the lower surface 32 of the upper block 30. An O-ring 76 is provided on the side of the first pressing plate 71 that contacts the stacked block 12 to improve sealing performance.

[0047] As shown in FIG. 6, the appearance of the assembled reaction vessel 10 is a square plate (flat rectangular parallelepiped). An example of the overall dimensions excluding the connecting means 60 is a width of 300 to 500 mm, a depth of 150 to 250 mm, and a height of 20 to 50 mm. In this embodiment, a holder insertion / removal opening 14 is provided on a side surface 13 of the stacking block 12. The side surface 13 of the stacking block 12 is a surface connecting the upper surface 31 of the upper block 30 and the lower surface 42 of the lower block 40. The holder insertion / removal opening 14 is one side of a recess 16 formed of a square plate-shaped space capable of accommodating a square plate-shaped substrate holder 20, so that the substrate holder 20 can be freely inserted into and removed from the recess 16.

[0048] The procedure for inserting the substrate holder 20 into the reaction vessel 10 is as follows. First, as shown in FIG. 6[A], the substrate S is placed on the four protrusions 23 of the substrate holder 20. The substrate S is, for example, a disk-shaped silicon wafer. In this state, the substrate holder 20 is inserted horizontally into the reaction vessel 10 through the holder insertion / removal opening 14 on the side surface 13 of the stacking block 12. Next, as shown in FIG. 6[B], four screws 73 are threaded through the through holes 75 of the pressure plate 70 and into the screw holes 74 of the stacking block 12. This seals the holder insertion / removal opening 14 with the substrate holder 20 housed in the recess 16. The process then proceeds to the substrate processing step shown in FIG. 1[B]. The procedure for removing the substrate holder 20 from the reaction vessel 10 is the reverse of the above procedure.

[0049] According to this embodiment, the substrate holder 20 is inserted and removed horizontally from the side surface 13 of the stacked block 12, which makes it easier to handle the substrate S than when the substrate S is inserted and removed vertically because gravity is not resisted. Therefore, it is also possible to accommodate the increasing size of the substrate S in recent years.

[0050] Next, the upper block 30 will be described in more detail with reference to Figure 7. Figure 7[A] is a detailed plan view of the upper block 30, and Figure 7[B] shows a cross section taken along line 7B-7B in Figure 7[A], i.e., a cross section of the gas / liquid supply groove 33, etc. The upper block 30 may be formed with a protrusion 37 on a stepped portion 36, a venturi channel 38 as the gas / liquid supply groove, and a gas supply hole 39 as the gas / liquid supply hole.

[0051] The protrusion 37 is formed on the step portion 36 and, in a plan view, is linear and surrounds the opening 35. Because the opening 35 is circular, the protrusion 37 is circumferential. The cross section of the protrusion 37 is triangular, and its apex is easily deformed when pressed. Therefore, when the protrusion 37 is pressed by the upper quartz plate 51, the opening 35 is sealed. In other words, the protrusion 37 functions as an O-ring. Therefore, instead of using an O-ring, the protrusion 37 can be formed by machining the upper block 30, thereby reducing the number of parts and further simplifying the configuration. The protrusion 37 is formed simultaneously with the formation of the step portion 36 on the lower surface 32 of the upper block 30.

[0052] The venturi channel 38 has a reduced channel section 38b where the cross-sectional area of ​​the channel is reduced, an expanded channel section 38a where the cross-sectional area of ​​the channel is expanded, and a throat section 38c between the reduced channel section 38b and the expanded channel section 38a where the cross-sectional area of ​​the channel is smallest. The gas supply hole 39 communicates with the venturi channel 38 via a gas supply groove 39a. One end of the gas supply groove 39a communicates with the throat section 38c and the other end communicates with the gas supply hole 39. The venturi channel 38 and the gas supply groove 39a are formed in the lower surface 32 of the upper block 30, similar to the gas-liquid supply groove 33.

[0053] The Venturi flow path 38 generates a microbubble liquid as the fluid F. The microbubble liquid is a liquid such as water into which microbubbles (air bubbles with a diameter of 1 to 100 μm) are injected. In the Venturi flow path 38, a liquid (e.g., water) mixed with a gas (e.g., air or ozone) supplied from the gas supply hole 39 is passed through the narrowest throat portion 38c at a speed approaching the speed of sound. This generates shock waves, causing the bubbles to collapse, resulting in fine bubbles downstream of the throat portion 38c. Microbubbles have a cleaning effect that can powerfully remove oily stains and other contaminants, floating them up and separating them. Therefore, they are used in photoresist removal in the semiconductor industry, semiconductor wafer cleaning, and oil-water separation in wastewater treatment.

[0054] Next, the lower block 40 and the substrate holder 20 will be described in more detail with reference to Figure 8. Figure 8[A] is a detailed plan view of the lower block 40 and the substrate holder 20, and Figure 8[B] shows a cross section taken along line 7B-7B in Figure 8[A], i.e., a cross section of the gas / liquid discharge groove 43, etc.

[0055] O-ring grooves 48a and 48b may be formed on the upper surface 41 of the lower block 40. A total of eight O-ring grooves 48a are formed in positions surrounding the gas / liquid discharge groove 43 of the lower block 40 and the gas / liquid supply groove 33 (including the Venturi flow path 38) of the upper block 30. In addition, an O-ring groove 48b is formed in a position surrounding the entire O-ring groove 48a. O-rings 49a and 49b are inserted into the O-ring grooves 48a and 48b on the upper surface 41 of the lower block 40, respectively, and the upper block 30 is then stacked on top of the O-ring grooves 48a and 48b with the lower surface 32 facing downwards to obtain the laminated block 12. The double O-ring grooves 48a and 48b and the O-rings 49a and 49b have the effect of improving the sealing performance of the laminated block 12. A protrusion 37 similar to that of the upper block 30 may also be formed on the stepped portion 46.

[0056] Substrate holder 20 may be formed with a groove 26 or a hole 27 for removing substrate holder 20 from recess 16 with a tool such as tweezers. By pinching groove 26 with a tool such as tweezers or hooking the tool into hole 27, substrate holder 20 can be easily removed by pulling it horizontally from holder insertion / removal opening 14.

[0057] Next, a method for forming the tunnel portion 47 in this example will be described. This example employs the method of the second example (FIG. 3[A2]) described in the embodiment. Here, as shown in FIGS. 9[A1][B1], the opening 45, the step 46, and the recess 16 are illustrated as already formed in the lower block 40. However, as will be described below, the opening 45, the step 46, and the recess 16 may be formed simultaneously with or after the process of forming the tunnel portion 47. In the partial plan views such as FIG. 9[A1], the curves and diagonal straight lines in the portion of line 8B-8B in FIG. 8[A] are simply shown as straight lines in the left-right and up-down directions.

[0058] First, as shown in FIGS. 9[A2][B2], in the process of processing the lower surface 42 side of the lower block 40, a groove 43c that will become the gas / liquid discharge groove 43 is formed. At this time, a step portion 46 and an opening 45 may be formed simultaneously. Next, as shown in FIGS. 10[A1][B1], in the process of processing the upper surface 41 side of the lower block 40, a groove 47c that will become the tunnel portion 47 is formed. At this time, a recess 16 and an opening 45 may be formed simultaneously. Next, as shown in FIGS. 10[A2][B2], in the process of processing the upper surface 41 side of the lower block 40, a cutout portion 40c is formed. The cutout portion 40c is a plate-like space that is slightly larger than the groove 47c in a plan view and has a depth that reaches the groove 47c. Simultaneously, as shown in FIGS. 10[A2][B2], a fitting block 40d is prepared. The fitting block 40d is a plate of a size corresponding to the cutout portion 40c. Then, by fitting the fitting block 40d into the cutout portion 40c, the upper surface 41d of the fitting block 40d becomes flush with the upper surface 41 of the lower block 40, and the fitting block 40d is integrated with the lower block 40 as shown in FIGS. 11[A1] and 11[B1]. This fitting can be achieved by, for example, press-fitting or gluing, but fitting protrusions 37 (FIG. 7) may also be formed on the fitting block 40d or the cutout portion 40c. Finally, as shown in FIGS. 11[A2] and 11[B2], gas and liquid discharge holes 44 are drilled in the lower surface 42 of the lower block 40, thereby completing the gas and liquid discharge groove 43 and tunnel portion 47. The gas and liquid discharge holes 44 may also be formed simultaneously with other parts in the process of processing the lower surface 42 of the lower block 40 described above.

[0059] 12 shows the relationship between the tunnel portion 47 and the lower quartz plate 52. In this embodiment, as in the previous embodiment, the gas / liquid discharge groove 43 includes a tunnel portion 47. The tunnel portion 47 has a bottom surface 47x that extends from the upper surface 521 of the lower quartz plate 52 fitted in the step portion 46, through the interior of the lower block 40, and to the gas / liquid discharge hole 44. The bottom surface 47x is at the same height as or lower than the upper surface 521 of the lower quartz plate 52 in the step portion 46. Therefore, the fluid F remaining on the upper surface 521 of the lower quartz plate 52 passes through the tunnel portion 47 due to its own weight and exits from the gas / liquid discharge hole 44 in the lower surface 42 of the lower block 40.

[0060] Next, a modified version of the reaction vessel 10 of this embodiment will be described with reference to FIG. 13 . While the previous embodiment shown in FIG. 6 uses screws 73 to close the holder insertion / removal opening 14 of the reaction vessel 10 with a pressure plate 70, this modified version uses a holder insertion / removal device 80. The holder insertion / removal device 80 is a device that horizontally inserts and removes the substrate holder 20 into and from the reaction vessel 10, and includes drives 81 and 82. The drives 81 and 82 are linear motion machines, such as air cylinders or electromagnetic solenoids, and each have a rod 83 and 84. One side of the pressure plate 70 is fixed to the tip of the rod 83 of the drive unit 81, and the other side of the pressure plate 70 is fixed to the substrate holder 20. Therefore, the drive unit 81 can horizontally insert and remove the substrate holder 20 into and from the reaction vessel 10 by extending and retracting the rod 83 horizontally. The drive unit 82 has, for example, four rods 84, each with a needle-shaped tip. The driving unit 82 can remove the substrate S from the substrate holder 20 or place the substrate S on the substrate holder 20 by extending and contracting the rod 84 in the vertical direction.

[0061] As shown in FIG. 13[A], when the substrate holder 20 is inserted into the reaction vessel 10, the rod 83 of the drive unit 81 is extended. When the rod 83 of the drive unit 81 is retracted from this state as shown in FIG. 13[B], the substrate holder 20 is pulled out horizontally from the reaction vessel 10. The lower surface S2 of the substrate S is exposed from the opening 25 of the substrate holder 20, as shown in FIG. 6[A], for example. Therefore, when the rod 84 of the drive unit 82 is extended as shown in FIG. 13[C], the tip of the rod 84 pushes up the lower surface S2 of the substrate S, thereby removing the substrate S from the substrate holder 20. The substrate S removed from the substrate holder 20 is transported to the next process. The procedure for inserting the substrate holder 20 into the reaction vessel 10 is the reverse of the above-described procedure. According to this modification, the horizontal insertion and removal of the substrate holder 20 into and from the reaction vessel 10, and the attachment and removal of the substrate S to and from the substrate holder 20, can be automated by the holder insertion and removal device 80, improving workability.

[0062] The other configurations, actions, and effects of this embodiment are the same as those of the previously described embodiment. The actions and effects of the reaction vessel 10 of this embodiment and the previously described embodiment can be summarized as follows.

[0063] a. The processing chamber (openings 35, 45) is constructed using two plate-shaped materials (upper block 30 and lower block 40), which allows for simple and inexpensive manufacture of complex chemical supply and discharge flow paths (gas / liquid supply groove 33 and gas / liquid discharge groove 43). Fluorine-based resins such as PTFE are suitable as plate-shaped materials when using chemicals.

[0064] b. For example, a silicon wafer substrate S can be wet cleaned, heated and dried with lamps 53 and 54, and then ozone can be introduced to oxidize the surface of the substrate S. For wet cleaning, for example, ammonia-water mixtures of ammonia or hydrochloric acid with hydrogen peroxide or hydrochloric acid-water mixtures are used. In this way, a dry process can be performed consecutively after a wet process. Therefore, compared to when the wet process and dry process are performed in separate devices, problems such as oxidation and surface contamination that occur between the wet process and dry process do not occur. Furthermore, by strengthening the airtightness and adopting a structure that allows processing even at reduced pressure, chemical processing and reactive gas processing can be performed consecutively.

[0065] c. Because it is easy to make it compact, the volume of the processing chamber (openings 35, 45) can be set to, for example, 1 L or less, making it possible to perform immersion processing using a small amount of chemical solution. Similarly, because it is easy to make it compact, the processing chamber (openings 35, 45) can be easily made into a closed space, and even chemical solutions that are easily vaporized (for example, supersaturated chemical solutions) can be used.

[0066] d. By constructing the upper and lower surfaces of the processing chamber (openings 35, 45) from quartz (upper quartz plate 51 and lower quartz plate 52), it is possible to apply energy ranging from infrared to ultraviolet light or by high-frequency induction to the substrate S. Furthermore, the new reaction process caused by the application of energy can be observed visually or by a camera through the quartz.

[0067] e. By supplying the fluid F to the substrate S at different times using valve control from multiple gas / liquid supply grooves 33, it is possible to ensure uniformity of the gas / liquid supply across the surface without using a rotation mechanism. In addition, a venturi flow path 38 can be incorporated as the gas / liquid supply groove 33, thereby achieving the effect of stirring the fluid F.

[0068] f. Unlike conventional single-wafer cleaning, cleaning without rotation is possible. Therefore, even objects to be cleaned (corresponding to the substrate S) such as MEMS (microelectromechanical systems) that require delicate cleaning can be handled by using a jig that can be set on the substrate holder 20.

[0069] <Other> Although the present invention has been described above with reference to the above-mentioned embodiments and examples, the present invention is not limited to the above-mentioned embodiments and examples. For example, the substrate is not limited to a semiconductor wafer, and substrates made of an insulator or a metal may also be used. The configuration and details of the present invention may be modified in various ways that are understandable to those skilled in the art, and such modified configurations and details are also included within the technical scope of the present invention. [Explanation of symbols]

[0070] 10... reaction vessel, 12... stacked block, 13... side surface, 14... holder insertion / removal port, 16... recess, 20... substrate holder, 23... protrusion, 25... opening, 26... groove, 27... hole, 30... upper block, 31... upper surface, 32... lower surface, 33... gas / liquid supply groove, 34... gas / liquid supply hole, 35... opening, 36... step portion, 37... protrusion, 38... venturi flow path, 38a... enlarged flow path portion , 38b...flow path narrowing portion, 38c...throat portion, 39...gas supply hole, 39a...gas supply groove, 40...lower block, 41...upper surface, 42...lower surface, 43...gas / liquid discharge groove, 44...gas / liquid discharge hole, 45...opening, 46...step portion, 47...tunnel portion, 47x...bottom surface, 48a, 48b...O-ring groove, 49a, 49b...O-ring, 40a, 40c...cutout portion, 40b , 40d... fitting block, 41b, 41d... upper surface, 42b, 42d... lower surface, 43a, 43c... grooves to become gas / liquid discharge grooves, 47b, 47c... grooves to become tunnel portions, 44a... hole to become gas / liquid discharge holes, 43e... gas / liquid discharge groove, 51... upper quartz plate, 52... lower quartz plate, 521... upper surface, 53, 54... lamp, 60... connecting means, 61... upper plate, 63... opening, 65... Through hole, 62...lower plate, 64...opening, 66...through hole, 67...bolt, 68...nut, 69...insertion hole, 70...holding plate, 71...first holding plate, 72...second holding plate, 73...screw, 74...screw hole, 75...through hole, 76...O-ring, 80...holder insertion / removal device, 81, 82...drive part, 83, 84...rod, S...substrate, S1...upper surface, S2...lower surface, F...fluid

Claims

1. A reaction vessel for supplying a liquid or gaseous fluid to process a substrate, a substrate holder for holding the substrate; a laminated block in which a plurality of plate-shaped blocks having flat both surfaces are laminated; and connecting means for connecting a plurality of the blocks, a groove serving as a flow path for the fluid is formed on a surface of at least one of the plurality of blocks; A reaction vessel characterized in that a recess for accommodating the substrate holder is formed on the surface of at least one of the plurality of blocks.

2. When both surfaces of the block are the upper surface and the lower surface, The stacked block includes an upper block and a lower block as the plurality of blocks, and is stacked such that a lower surface of the upper block faces an upper surface of the lower block, the recess is formed on the lower surface of the upper block or the upper surface of the lower block, a gas / liquid supply groove that serves as a flow path for the fluid and communicates with the recess is formed on the lower surface of the upper block, and a gas / liquid supply hole that communicates with the gas / liquid supply groove is formed on the upper surface of the upper block, 2. The reaction vessel according to claim 1, wherein a gas / liquid discharge groove that serves as a flow path for the fluid and communicates with the recess is formed on the upper or lower surface of the lower block, and a gas / liquid discharge hole that communicates with the gas / liquid discharge groove is formed on the lower surface of the lower block.

3. the substrate holder holds the substrate in a state where at least one of both surfaces of the substrate is exposed; an opening is formed in the upper block or the lower block, facing the exposed surface of the substrate and penetrating the upper surface and the lower surface; 3. The reaction vessel according to claim 2, further comprising a quartz plate that closes the opening.

4. A step portion of a certain depth into which the quartz plate is fitted is formed on the lower surface of the lower block, the gas / liquid discharge groove formed in the lower block includes a tunnel portion formed inside the lower block, the tunnel portion has a bottom surface extending from the upper surface of the quartz plate fitted in the step portion to the gas / liquid discharge hole, 4. The reaction vessel according to claim 3, wherein the bottom surface is at a height equal to or lower than the top surface of the quartz plate.

5. a linear protrusion is formed on the upper block or the lower block so as to surround the opening, 5. The reaction vessel according to claim 3, wherein the opening is sealed by the quartz plate pressing against the protrusion.

6. A reaction vessel described in any one of claims 2 to 4, wherein a holder insertion / removal port is formed on the side of the stacked block, which is the surface connecting the upper surface of the upper block and the lower surface of the lower block, allowing the substrate holder to be freely inserted and removed from the recess.

7. the gas-liquid supply groove comprises a groove-shaped venturi flow path having a throat portion with the smallest flow path cross-sectional area between a flow path contraction portion where the flow path cross-sectional area is contracted and a flow path expansion portion where the flow path cross-sectional area is expanded, 5. The reaction vessel according to claim 2, wherein the gas / liquid supply hole is a gas supply hole communicating with the throat portion.

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