Power conversion module

Abstract

To provide a power conversion module capable of detecting abnormality of a current detection part.SOLUTION: The power conversion module 20 has a first module 20Aa and a second module 20Bb. The first module 20Aa includes a circuit unit 201 and a first sensor portion 130. The first sensor unit 130 is provided at each of the O terminals 115a and 115b. In the first sensor unit 130, the first sensor elements 131 and the first serial elements 132 are arranged along the O terminals 115a and 115b. The second module 20Bb includes a circuit unit 202 and a second sensor unit 140. The second sensor unit 140 is provided at each of the O terminals 116a and 116b. In the second sensor unit 140, the second sensor elements 141 and the second serial elements 142 are arranged along the O terminals 116a and 115b.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The disclosure herein relates to power conversion modules. [Background technology]

[0002] Patent Document 1 discloses a power conversion device including a first inverter connected to one end of a winding of a rotating electric machine and a second inverter connected to the other end of the winding. A current detector is provided in the connection path connecting the first inverter and the winding. One current detector is provided for each of the three-phase connection paths. The contents of the prior art documents are incorporated by reference as explanations of the technical elements in this specification. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-177342 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the above-mentioned Patent Document 1, there is a concern that even if an abnormality occurs in the current detection unit, the abnormality cannot be detected. In the above-mentioned viewpoints and other viewpoints not mentioned, further improvements are required in the power conversion module.

[0005] One disclosed object is to provide a power conversion module that can detect an abnormality in a current detection unit. [Means for solving the problem]

[0006] The first disclosed aspect comprises: A power conversion module (20A, 20B) that converts power supplied to a rotating electric machine (3A, 3B), semiconductor elements (61H, 61L, 62H, 62L) constituting an inverter (8, 9) connected to windings of a rotating electric machine via output paths (13A, 14B); a plurality of output conductor portions (115, 116) arranged in a predetermined direction (X) and forming at least a part of an output path; a current detection unit for detecting a current flowing through a target conductor portion (115a, 115b, 116b, 116c) among the plurality of output conductor portions, the current detection unit being a target detection unit (131, 141) provided on the target conductor portion; a current detection unit for detecting a current flowing in the target conductor portion, the current detection unit being a common detection unit (132, 142) provided on the target conductor portion together with the current detection unit; The power conversion module is provided with:

[0007] According to the first aspect, both the target detection unit and the common detection unit detect the current flowing through the target conductor. In this configuration, an abnormality in either the target detection unit or the common detection unit can be detected by using the detection result of the other. Furthermore, in this configuration, because both the target detection unit and the common detection unit are provided on the target conductor, a difference is unlikely to occur between the detection result of the target detection unit and the detection result of the common detection unit. Therefore, it is unlikely that the driving mode of the rotating electric machine will differ when one of the detection result of the target detection unit and the detection result of the common detection unit is used to control the rotating electric machine compared to when the other is used to control the rotating electric machine. Therefore, it is possible to both detect an abnormality in the current detection unit and improve the reliability of the driving of the rotating electric machine.

[0008] A second disclosed aspect is A power conversion module (20) that converts power supplied to a rotating electric machine (3), first semiconductor elements (61H, 61L) constituting a first inverter (8) connected to a winding of the rotating electric machine via a first output path (13); second semiconductor elements (62H, 62L) constituting a second inverter (9) connected to a winding of the rotating electric machine via a second output path (14); a plurality of first output conductor portions (115) arranged in a predetermined direction (X) and forming at least a part of a first output path; a plurality of second output conductor portions (116) arranged in a predetermined direction (X) and forming at least a part of a second output path; a first target detection unit (131) provided on a first target conductor portion, which is a current detection unit that detects a current flowing through a first target conductor portion (115a, 115b) among the plurality of first output conductor portions; a first common detection unit (132) that is a current detection unit that detects a current flowing through a first target conductor portion and is provided on the first target conductor portion together with the first target detection unit; a second target detection unit (141) provided on the second target conductor portion, which is a current detection unit that detects a current flowing through the second target conductor portion (116b, 116c) among the plurality of second output conductor portions; a second common detection section (142) that is a current detection section for detecting a current flowing through the second output conductor section and is provided on the second target conductor section together with the second target detection section; The power conversion module is provided with:

[0009] According to the second aspect, both the target detector and the common detector detect the current flowing through the target conductor on both the first inverter side and the second inverter side of the rotating electric machine. Therefore, as with the first aspect, it is possible to detect an abnormality in the current detector and improve the reliability of driving the rotating electric machine on both the first inverter side and the second inverter side.

[0010] The various aspects disclosed in this specification employ different technical means to achieve their respective objectives. The reference numerals in parentheses in the claims and in this section are intended to exemplify correspondences with the following embodiments and are not intended to limit the technical scope. The objectives, features, and advantages disclosed in this specification will become more apparent by reference to the following detailed description and the accompanying drawings. [Brief explanation of the drawings]

[0011] [Figure 1] FIG. 1 is a diagram showing a drive system according to a first embodiment. [Figure 2] FIG. 4 is a diagram showing an example of an operating point map of the rotating electric machine. [Figure 3] FIG. 1 is a diagram showing a star-connected drive. [Figure 4] FIG. 10 is a diagram illustrating an open connection drive. [Figure 5] FIG. 2 is a circuit diagram showing a state in which an external device is connected. [Figure 6] 1 is a diagram showing a connection structure between a power conversion module and an external device. FIG. [Figure 7] FIG. 2 is a plan view showing the power conversion module. [Figure 8] FIG. 2 is a plan view showing the internal structure of the power conversion module. [Figure 9] FIG. 8 is a cross-sectional view taken along line IX-IX in FIG. 7. [Figure 10] FIG. 8 is a cross-sectional view taken along line XX in FIG. [Figure 11] FIG. 10 is a diagram illustrating a reference example. [Figure 12] FIG. 10 is a diagram illustrating a reference example. [Figure 13] FIG. 1 shows a first drive system. [Figure 14] FIG. 2 is a plan view showing a first power conversion module. [Figure 15] FIG. 2 is a plan view showing the internal structure of the first power conversion module. [Figure 16] FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. [Figure 17] FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. [Figure 18] FIG. 1 shows a second drive system. [Figure 19] FIG. 10 is a plan view showing a second power conversion module. [Figure 20] FIG. 10 is a plan view showing the internal structure of the second power conversion module. [Figure 21] FIG. 20 is a cross-sectional view taken along line XXI-XXI in FIG. 19. [Figure 22]FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG. [Figure 23] FIG. 10 is a diagram showing a drive system according to a second embodiment. [Figure 24] FIG. 2 is a plan view showing the power conversion module. [Figure 25] FIG. 25 is a cross-sectional view taken along line XXV-XXV in FIG. 24. [Figure 26] FIG. 26 is a cross-sectional view taken along line XXVI-XXVI in FIG. 24. [Figure 27] FIG. 10 is a plan view showing a power conversion module according to a third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0012] Hereinafter, several embodiments will be described with reference to the drawings. Note that in each embodiment, corresponding components are designated by the same reference numerals, and redundant description may be omitted. When only a portion of the configuration is described in each embodiment, the configuration of another embodiment previously described may be applied to the remaining portion of the configuration. Furthermore, in addition to the combinations of configurations explicitly stated in the description of each embodiment, configurations of several embodiments may be partially combined together even if not explicitly stated, provided that there is no particular problem with the combination.

[0013] The power conversion module of this embodiment is applied to, for example, a mobile body using a rotating electric machine as a drive source, such as an electric vehicle (BEV), a hybrid electric vehicle (HEV), a plug-in hybrid electric vehicle (PHEV), an aircraft such as an electric vertical take-off and landing aircraft or a drone, a ship, a construction machine, an agricultural machine, etc.

[0014] (First embodiment) First, the schematic configuration of a drive system for a moving body will be described with reference to FIG.

[0015] <Drive systems for moving objects> As shown in FIG. 1, a drive system 1 for a moving body includes a DC power supply 2, a rotating electric machine 3, and a power conversion circuit 4.

[0016] The DC power supply 2 may be, for example, a rechargeable secondary battery such as a lithium ion battery or a nickel-metal hydride battery. The DC power supply 2 may also be one that converts AC power to DC and outputs it. The DC power supply 2 supplies power to the rotating electrical machine 3. The DC power supply 2 corresponds to a power supply unit.

[0017] The rotating electric machine 3 is a three-phase rotating electric machine of an open winding type with an open neutral point. The rotating electric machine 3 has a U-phase winding 3U, a V-phase winding 3V, and a W-phase winding 3W. Hereinafter, the U-phase winding 3U, the V-phase winding 3V, and the W-phase winding 3W may be simply referred to as windings 3U, 3V, and 3W.

[0018] The rotating electric machine 3 functions, for example, as a drive source for a moving body, that is, as an electric motor. If the moving body is a vehicle, the rotating electric machine 3 generates torque for driving drive wheels (not shown). The rotating electric machine 3 is not limited to an electric motor. The rotating electric machine 3 may be a motor generator that functions as both an electric motor and a generator, or may be a generator.

[0019] The power conversion circuit 4 converts power between the DC power supply 2 and the rotating electric machine 3. The drive system 1 is a common power supply system in which a common DC power supply 2 supplies power to two inverters 8 and 9 (described later) to drive the rotating electric machine 3. The drive system 1 may include only one common DC power supply 2 as shown in FIG. 1, or multiple common DC power supplies 2. The drive system 1 may include a power supply switch (not shown), such as an SMR, between the DC power supply 2 and the power conversion circuit 4. SMR is an abbreviation for System Main Relay. Turning the power supply switch on enables power supply from the DC power supply 2 to the rotating electric machine 3, and turning the power supply switch off cuts off the power supply from the DC power supply 2 to the rotating electric machine 3.

[0020] <Power conversion circuit> Next, the power conversion circuit 4 will be described with reference to Fig. 1. Fig. 1 shows an example of the power conversion circuit 4. The power conversion circuit 4 shown in Fig. 1 includes power lines 5 and 6, a smoothing capacitor 7, inverters 8 and 9, a changeover switch 10, and snubber circuits 11 and 12.

[0021] The power supply line 5 is a high-potential power line. The power supply line 5 is connected to the positive electrode of the DC power supply 2. The power supply line 5 may be referred to as a positive-side power supply line, P line, etc. The power supply line 5 has a wiring 5A. The wiring 5A is a part of the wiring that constitutes the power supply line 5. The wiring 5A is a part of the power supply line 5 that connects the inverter 8 and the inverter 9. The power supply line 6 is a low-potential power line. The power supply line 6 is connected to the negative electrode of the DC power supply 2. The power supply line 6 may be referred to as a negative-side power supply line, N line, etc. The power supply line 6 has a wiring 6A. The wiring 6A is a part of the wiring that constitutes the power supply line 6. The wiring 6A is a part of the power supply line 6 that connects the inverter 8 and the inverter 9. The power supply lines 5, 6 are configured to include a bus bar that is, for example, a metal plate.

[0022] The smoothing capacitor 7 mainly smoothes the DC voltage supplied from the DC power supply 2. The smoothing capacitor 7 is provided between the power supply lines 5 and 6. The positive electrode of the smoothing capacitor 7 is connected to the power supply line 5 between the DC power supply 2 and the inverters 8 and 9. The negative electrode of the smoothing capacitor 7 is connected to the power supply line 6 between the DC power supply 2 and the inverters 8 and 9. The smoothing capacitor 7 is connected in parallel to the inverters 8 and 9.

[0023] The inverters 8 and 9 are DC-AC conversion circuits. The inverters 8 and 9 are three-phase inverter circuits. The inverter 8 corresponds to a first inverter, and the inverter 9 corresponds to a second inverter. The inverter 8 is configured with upper and lower arm circuits 8HL for three phases. The upper and lower arm circuits 8HL are sometimes referred to as legs. The upper and lower arm circuit 8HL has an upper arm 8H and a lower arm 8L. The upper arm 8H and the lower arm 8L are connected in series between the power supply lines 5 and 6, with the upper arm 8H on the power supply line 5 side.

[0024] The connection point between the upper arm 8H and the lower arm 8L is connected to the winding of the corresponding phase in the rotating electric machine 3 via an output line 13. The inverter 8 has six arms. Each arm is configured with a switching element. The number of switching elements configuring each arm is not particularly limited. There may be one or more. When there are more than one switching elements, the multiple switching elements connected in parallel to each other are turned on and off at the same timing by a common gate drive signal (drive voltage).

[0025] In the example shown in FIG. 1, an n-channel MOSFET 8S is used as the switching element constituting each arm. MOSFET is an abbreviation for Metal Oxide Semiconductor Field Effect Transistor. In the upper arm 8H, the drain terminal of the MOSFET 8S is connected to the power supply line 5. In the lower arm 8L, the source terminal of the MOSFET 8S is connected to the power supply line 6. The source terminal of the MOSFET 8S in the upper arm 8H and the drain terminal of the MOSFET 8S in the lower arm 8L are connected to each other.

[0026] A freewheeling diode 8D is connected in antiparallel to each MOSFET 8S. The diode 8D may be a parasitic diode (body diode) of the MOSFET 8S, or may be provided separately from the parasitic diode. The anode terminal of the diode 8D is connected to the source terminal of the corresponding MOSFET 8S, and the cathode terminal is connected to the drain terminal.

[0027] The inverter 9 has the same configuration as the inverter 8. The inverter 9 is configured with upper and lower arm circuits 9HL for three phases. The upper and lower arm circuit 9HL has an upper arm 9H and a lower arm 9L. The upper arm 9H and the lower arm 9L are connected in series between the power supply lines 5 and 6, with the upper arm 9H on the power supply line 5 side.

[0028] The connection point between the upper arm 9H and the lower arm 9L is connected to the winding of the corresponding phase in the rotating electric machine 3 via an output line 14. The inverter 9 also has six arms. Each arm is configured with a switching element. The number of switching elements constituting each arm is not particularly limited. It may be one or more.

[0029] In the example shown in Fig. 1, an n-channel MOSFET 9S is used as the switching element constituting each arm. In the upper arm 9H, the drain terminal of the MOSFET 9S is connected to the power supply line 5. In the lower arm 9L, the source terminal of the MOSFET 9S is connected to the power supply line 6. The source terminal of the MOSFET 9S in the upper arm 9H and the drain terminal of the MOSFET 9S in the lower arm 9L are connected to each other. A freewheeling diode 9D is connected in anti-parallel to each MOSFET 9S.

[0030] As described above, the high-potential terminals (drain terminals) of the upper arms 8H, 9H of the inverters 8, 9 are connected to the power line 5. The low-potential terminals (source terminals) of the lower arms 8L, 9L are connected to the power line 6. A node connecting the upper arm 8H and the lower arm 8L is connected to one end of the corresponding phase winding via an output line 13, and a node connecting the upper arm 9H and the lower arm 9L is connected to the other end of the corresponding phase winding via an output line 14. Specifically, one end of the U-phase winding 3U is connected to a node U1 of the U-phase upper and lower arm circuit 8HL, and the other end of the U-phase winding 3U is connected to a node U2 of the U-phase upper and lower arm circuit 9HL. One end of the V-phase winding 3V is connected to a node V1 of the V-phase upper and lower arm circuit 8HL, and the other end of the V-phase winding 3V is connected to a node V2 of the V-phase upper and lower arm circuit 9HL. One end of the W-phase winding 3W is connected to a node W1 of a W-phase upper and lower arm circuit 8HL, and the other end of the W-phase winding 3W is connected to a node W2 of a W-phase upper and lower arm circuit 9HL.

[0031] The switching elements constituting the inverters 8 and 9 are not limited to the MOSFETs described above. For example, IGBTs may be used. IGBT stands for Insulated Gate Bipolar Transistor. In the case of an IGBT, a freewheeling diode is also connected in anti-parallel.

[0032] The changeover switch 10 is a semiconductor switch. A semiconductor switch has a switching element formed on a semiconductor chip. The switching element is not particularly limited and may have the same configuration as the switching element constituting at least one of the inverters 8, 9, or may have a different configuration. The changeover switch 10 is provided between the inverters 8 and 9 on at least one of the power supply lines 5, 6. When the changeover switch 10 is closed, it connects the high-potential side terminal of the upper arm 9H of the inverter 9 to the smoothing capacitor 7 (DC power supply 2). When the changeover switch 10 is open, it cuts off the connection between the high-potential side terminal of the upper arm 9H and the smoothing capacitor 7 (DC power supply 2). The changeover switch 10 may also be called a switch or an open / close switch.

[0033] The switching element of the changeover switch 10 illustrated in FIG. 1 is a MOSFET. A diode is connected in anti-parallel to the MOSFET. The diode is, for example, a parasitic diode. The changeover switch 10 includes changeover switches 10A and 10B. The changeover switch 10A is arranged on wiring 5A of the power supply line 5. The changeover switch 10A is arranged on wiring 5A so that the drain terminal of the MOSFET is on the inverter 8 side and the source terminal is on the inverter 9 side. In other words, the changeover switch 10A is arranged so that the forward direction of the diode is from the inverter 9 to the inverter 8.

[0034] The changeover switch 10B is arranged on the wiring 6A of the power supply line 6. The changeover switch 10B is arranged on the wiring 6A so that the drain terminal of the MOSFET is on the inverter 9 side and the source terminal is on the inverter 8 side. In other words, the changeover switch 10B is arranged so that the forward direction of the diode is from the inverter 8 to the inverter 9. When the MOSFET is turned on and the changeover switch 10 is closed, the inverter 9 is electrically connected to the smoothing capacitor 7 (DC power supply 2). When the MOSFET is turned off and the changeover switch 10 is opened, the electrical connection between the inverter 9 and the smoothing capacitor 7 is interrupted.

[0035] The snubber circuit 11 is connected in parallel to the inverter 9, i.e., the upper and lower arm circuits 9HL. The snubber circuit 11 reduces the inductance of the upper and lower arm circuits 9HL. In other words, the snubber circuit 11 absorbs a transient high voltage, or so-called switching surge, that occurs when the switching elements (MOSFETs 9S) that make up the upper and lower arm circuits 9HL are switched. This enables the inverter 9 to perform high-speed switching.

[0036] The snubber circuit 11 has at least a capacitor 11C. The snubber circuit 11 may be, for example, a C snubber circuit having a capacitor, or an RC snubber circuit having a capacitor and a resistor. It may also be an RCD snubber circuit having a capacitor, a resistor, and a diode. The snubber circuit 11 shown in FIG. 1 is an RC snubber circuit in which a capacitor 11C and a resistor 11R are connected in series. One end of the snubber circuit 11 is connected to the power supply line 5. Another end of the snubber circuit 11 is connected to a portion of the wiring 5A that connects the changeover switch 10 and the inverter 9. The other end of the snubber circuit 11 is connected to the power supply line 6.

[0037] In the power conversion circuit 4 illustrated in FIG. 1, a snubber circuit 11 is provided for each phase of the upper and lower arm circuits 9HL. The power conversion circuit 4 includes three snubber circuits 11. One end of each snubber circuit 11 is connected to the power supply line 5, and the other end is connected to the power supply line 6. Each snubber circuit 11 includes a capacitor 11C and a resistor 11R. One of the snubber circuits 11 is connected in parallel to the U-phase upper and lower arm circuit 9HL. The other snubber circuit 11 is connected in parallel to the V-phase upper and lower arm circuit 9HL. The other snubber circuit 11 is connected in parallel to the W-phase upper and lower arm circuit 9HL.

[0038] The snubber circuit 12 is connected in parallel to the inverter 8, i.e., the upper and lower arm circuits 8HL. The snubber circuit 12 reduces the inductance of the upper and lower arm circuits 8HL, thereby enabling high-speed switching of the inverter 8. The snubber circuit 12 includes at least a capacitor 12C. The snubber circuit 12 may be, for example, a C snubber circuit, an RC snubber circuit, or an RCD snubber circuit. The snubber circuit 12 shown in FIG. 1 is an RC snubber circuit in which a capacitor 12C and a resistor 12R are connected in series. One end of the snubber circuit 12 is connected to the power supply line 5. The other end of the snubber circuit 12 is connected to the power supply line 6.

[0039] In the power conversion circuit 4 illustrated in FIG. 1, a snubber circuit 12 is provided for each phase of the upper and lower arm circuits 8HL. The power conversion circuit 4 includes three snubber circuits 12. One end of each snubber circuit 12 is connected to the power supply line 5, and the other end is connected to the power supply line 6. Each snubber circuit 12 includes a capacitor 12C and a resistor 12R. One of the snubber circuits 12 is connected in parallel to the U-phase upper and lower arm circuit 8HL. The other snubber circuit 12 is connected in parallel to the V-phase upper and lower arm circuit 8HL. The other snubber circuit 12 is connected in parallel to the W-phase upper and lower arm circuit 8HL.

[0040] As illustrated in FIG. 1, the power conversion circuit 4 may include a control unit (CTR) 15. The control unit 15 may include, for example, a processor 15a, a memory 15b, and a storage 15c. The processor 15a executes various processes by accessing the memory 15b. The memory 15b is a rewritable volatile storage medium. The memory 15b is, for example, a RAM. RAM is an abbreviation for Random Access Memory. The storage 15c is a rewritable nonvolatile memory. The storage 15c may be realized by at least one type of non-transitory tangible storage medium, such as a semiconductor memory, a magnetic medium, or an optical medium. The storage 15c may include multiple types of storage media, such as a ROM and a flash memory. ROM is an abbreviation for Read Only Memory.

[0041] The storage 15c stores a program 15d executed by the processor 15a. The program 15d configures a plurality of functional units by causing the processor 15a to execute a plurality of instructions. The processing performed by the control unit 15 may be realized by software processing in which the processor 15a executes the program 15d described above, or may be realized by hardware processing using a dedicated electronic circuit. It may also be realized by a combination of software processing and hardware processing. The program 15d includes a program for executing a rotation control process, which will be described later.

[0042] The control unit 15 may include, for example, a drive command generation unit and a drive circuit unit (not shown). The drive command generation unit controls the inverters 8 and 9. The drive command generation unit generates drive commands (command signals) for controlling the on / off of the MOSFETs 8S and 9S and outputs them to the drive circuit unit. The drive command generation unit generates drive commands based on drive requests for the rotating electric machine 3, such as torque command values ​​input from a higher-level ECU (not shown), and signals detected by various sensors. The various sensors may include current sensors, rotation angle sensors, voltage sensors, and the like (not shown). The current sensors detect phase currents flowing through the windings 3U, 3V, and 3W of each phase. The rotation angle sensor detects the rotation angle of the rotor of the rotating electric machine 3. The voltage sensor detects the voltage across the smoothing capacitor 7. Current sensors include sensors 121 to 124 (described later).

[0043] The drive command generation unit controls the changeover switch 10 (10A, 10B). The drive command generation unit generates drive commands for controlling the on / off of the changeover switch 10 and outputs them to the drive circuit unit. The drive circuit unit is sometimes referred to as a driver. The drive circuit unit can independently control the on / off of the MOSFET 8S, MOSFET 9S, and changeover switch 10 based on the drive commands. For convenience, signal lines for transmitting drive signals from the control unit 15 to each switching element are omitted in FIG. 1.

[0044] <Star connection drive and open connection drive> Next, star connection driving and open connection driving will be described with reference to Figures 2, 3, and 4. Figure 2 shows an example of an operating point map of a rotating electric machine, with the horizontal axis representing rotation speed and the vertical axis representing torque. Figure 3 is a diagram showing star connection driving. Figure 4 is a diagram showing open connection driving. For convenience, the control unit 15 is omitted from Figures 3 and 4.

[0045] As shown in FIG. 2, the driving range of the rotating electric machine 3 is divided into two ranges depending on the rotation speed and torque. One of the driving ranges is the star connection driving range. The star connection driving range is a normal use range. The other driving range is the open connection driving range. The open connection driving range is a range with higher rotation speeds or higher torque than the star connection driving range.

[0046] When the operating point is in the star connection drive region, the control unit 15 executes star connection drive control. Star connection drive is sometimes referred to as Y drive. The control unit 15 controls the MOSFETs 8S and 9S and the changeover switch 10 so that the windings 3U, 3V, and 3W are in a star connection state. Specifically, as shown in FIG. 3, the MOSFETs of the changeover switch 10 (10A, 10B) are turned off and the changeover switch 10 is opened. The inverter 9 is also neutralized. As shown in FIG. 3, for example, the MOSFETs 9S of the upper arms 9H of all phases may be turned on and the MOSFETs 9S of the lower arms 9L of all phases may be turned off. The MOSFETs 9S of the upper arms 9H of all phases may be turned off and the MOSFETs 9S of the lower arms 9L of all phases may be turned on. The MOSFETs 8S of the inverter 8 are then controlled according to drive requirements, etc.

[0047] FIG. 3 shows one current conduction pattern in star-connection drive. The dashed-dotted arrows in FIG. 3 indicate an example of a current path. FIG. 3 shows the current path when the MOSFET 8S in the U-phase upper arm 8H and the MOSFET 8S in the W-phase lower arm 8L are turned on. In the example shown in FIG. 3, the upper arm 9H of the inverter 9 is turned on and the lower arm 9L is turned off. The current flows in the following order: U-phase upper arm 8H → node U1 → U-phase winding 3U → node U2 → U-phase upper arm 9H → W-phase upper arm 9H → node W2 → W-phase winding 3W → node W1 → W-phase lower arm 8L. In this way, in star-connection drive, current flows without passing through the selector switch 10.

[0048] When the operating point is in the open connection drive region, the control unit 15 executes open connection drive control. Open connection drive is sometimes referred to as H drive. The control unit 15 turns on the MOSFET of the changeover switch 10 (10A, 10B) to close the changeover switch 10. The control unit 15 also opens the neutral point of the inverter 9. By opening the neutral point, an open connection circuit of the U-phase upper and lower arm circuits 8HL, 9HL is formed via the U-phase winding 3U. Similarly, an open connection circuit of the V-phase upper and lower arm circuits 8HL, 9HL is formed via the V-phase winding 3V. An open connection circuit of the W-phase upper and lower arm circuits 8HL, 9HL is formed via the W-phase winding 3W. The control unit 15 regards each phase as an independent open connection circuit and controls the applied voltage for each phase.

[0049] FIG. 4 shows one current conduction pattern in open-connection driving. The two-dot chain arrow in FIG. 4 indicates one example of a current path. FIG. 4 shows the current path when MOSFET 8S in W-phase lower arm 8L and MOSFET 9S in W-phase upper arm 9H are turned on. Current flows in the following order: changeover switch 10 → W-phase upper arm 9H → node W2 → W-phase winding 3W → node W1 → W-phase lower arm 8L. In this way, in open-connection driving, current flows via changeover switch 10.

[0050] As described above, the power conversion circuit 4 is configured to be switchable between star connection drive and open connection drive. The power conversion circuit 4 is configured to be able to execute star connection drive. The power conversion circuit 4 is configured to be able to execute open connection drive. By executing open connection drive instead of star connection drive, it is possible to output a higher rotation speed range or a higher torque range.

[0051] <Charging using a power conversion circuit> Next, charging using the power conversion circuit 4 will be described with reference to Fig. 5. Fig. 5 shows a circuit configuration showing a state in which an external device is connected. In Fig. 5, the external device is shown in a simplified form.

[0052] As shown in FIG. 5, the external device 16 is connected to the power supply lines 5 and 6. The external device 16 is connected in parallel to the DC power supply 2. The external device 16 is an element separate from the elements constituting the drive system 1. The external device 16 may be, for example, an element external to a moving body (vehicle). An example of the external device 16 is a charger. The charger charges the DC power supply 2. The voltage supplied by the external device 16 is lower than the power supply voltage of the DC power supply 2. For example, the DC power supply 2 is 800 V, and the external device 16 (charger) is 400 V. In the rotating electric machine 3 and the power conversion circuit 4, the windings 3U, 3V, and 3W of the rotating electric machine 3 and the upper and lower arm circuit 8HL constituting the inverter 8 function as a boost circuit.

[0053] The external device 16 is connected to the drive system 1 (power conversion circuit 4), for example, while the vehicle is stopped. When the external device 16 is connected, the control unit 15 controls the inverters 8 and 9 and the selector switch 10 to boost the supply voltage of the external device 16 and charge the DC power supply 2. In the boost operation, one phase or multiple phases (polyphase) may be used. The control unit 15 turns off the MOSFET of the selector switch 10. In this state, the control unit 15 turns on the upper arm 9H of the inverter 9 and controls the on / off of the upper and lower MOSFETs 8S of the upper and lower arm circuit 8HL in the corresponding phase.

[0054] The external device 16 may be a DC power supply (external power supply) separate from the DC power supply 2. The external power supply may be, for example, a secondary battery or may include a DC-AC conversion circuit. The DC power supply 2 charges the external device 16. The power supply voltage of the external device 16 is lower than the power supply voltage of the DC power supply 2. In the rotating electric machine 3 and the power conversion circuit 4, the windings 3U, 3V, 3W of the rotating electric machine 3 and the upper arm 8H of the inverter 8 function as a step-down circuit.

[0055] When an external device 16 is connected to the drive system 1, the control unit 15 controls the inverters 8 and 9 and the selector switch 10 to step down the power supply voltage of the DC power supply 2 and charge the external device 16. In the step-down operation, one phase or multiple phases (multi-phase) may be used. The control unit 15 turns off the MOSFET of the selector switch 10. In this state, the control unit 15 turns on the upper arm 9H of the inverter 9 and controls the on / off of the MOSFET 8S of the upper arm 8H of the corresponding phase. The MOSFET 8S of the lower arm 8L of the corresponding phase is turned off. When the MOSFET 8S of the upper arm 8H is turned off, a current flows through the diode of the lower arm 8L of the corresponding phase.

[0056] Fig. 6 shows an example of an external device connection structure corresponding to the circuit configuration shown in Fig. 5. Fig. 6 shows a connection structure between a power conversion module and an external device. Fig. 6 shows a simplified view of the external device. Fig. 6 also shows directions (X direction and Y direction) that will be described later.

[0057] The power conversion module 20 shown in FIG. 6 provides the main parts of the power conversion circuit 4. The power conversion module 20 provides inverters 8 and 9, a changeover switch 10, and snubber circuits 11 and 12. The power conversion module 20 includes two circuit units 201 and 202, as will be described later. The power conversion module 20 includes a P terminal 113 connected to the circuit unit 202. The power conversion module 20 converts the power supplied to the rotating electric machine 3. The power supply device 21 provides the DC power supply 2. The capacitor device 22 provides the smoothing capacitor 7. The external device 23 provides the external device 16.

[0058] The positive electrode of the power supply device 21 is electrically connected to the positive terminal of the capacitor device 22 via the P bus bar 24P. The negative electrode of the power supply device 21 is electrically connected to the negative terminal of the capacitor device 22 via the N bus bar 24N. The positive terminal of the capacitor device 22 is electrically connected to the power conversion module 20 via the P bus bar 25P. The negative terminal of the capacitor device 22 is electrically connected to the power conversion module 20 via the N bus bar 25N. The positive terminal of the external device 23 is electrically connected to the P terminal 113 of the power conversion module 20 via the P bus bar 26P. The negative terminal of the external device 23 is electrically connected to, for example, the N bus bar 24N via the N bus bar 26N. The negative terminal of the external device 23 is connected to a position closer to the power supply device 21 than the capacitor device 22. This reduces inductance. Note that the conductive member electrically connecting corresponding elements is not limited to a bus bar. It may be a cable, a terminal, or the like.

[0059] The power conversion module 20 is connected to the winding section 3 coil via the output bus bar 27 out. In the power conversion module 20, O terminals 115 and 116, which will be described later, are connected to the output bus bar 27 out. The winding section 3 coil is provided in the rotating electric machine 3 and forms windings 3U, 3V, and 3W. The output bus bar 27 out electrically connects the circuit units 201 and 202 to the winding section 3 coil. The output bus bar 27 out forms at least a part of the output lines 13 and 14.

[0060] The drive system 1 has a power conversion device 18. The power conversion device 18 converts the power supplied to the rotating electric machine 3 using a power conversion module 20. The power conversion device 18 forms a power conversion circuit 4. The power conversion circuit 4 is sometimes referred to as a power conversion device. The power conversion device 18 is configured to include a power conversion module 20, a capacitor device 22, and a device housing. The device housing is a case for the power conversion device 18 and houses the power conversion module 20 and the capacitor device 22. The device housing is made of a resin material or the like. The device housing is provided with an input terminal block, an output terminal block, an external terminal block, etc. The input terminal block is a terminal block for connecting the P bus bar 24P and the N bus bar 24N. The output terminal block is a terminal block for connecting 27out. The external terminal block is a terminal block for connecting the P bus bar 26P and the N bus bar 26N.

[0061] <Current sensor> As shown in FIG. 1, the power conversion circuit 4 has a first current sensor 121, a first series sensor 122, a second current sensor 123, and a second series sensor 124. The sensors 121 to 124 are current sensors that detect the current flowing in the current path. The sensors 121 to 124 are shunt resistor type or magnetic type current sensors. The shunt resistor type current sensor has a shunt resistor and detects the current flowing in the shunt resistor. The shunt resistor is included in the current path. The magnetic type current sensor is formed by a magnetic sensor such as a Hall sensor. The magnetic sensor has a sensor element such as a Hall element. The sensors 121 to 124 output a detection signal to the control unit 15 according to the current flowing in the current path.

[0062] The sensors 121 to 124 detect the phase currents flowing through the windings 3U, 3V, and 3W. The sensors 121 to 124 are provided for at least two of the three phases. The sensors 121 and 122 are sometimes referred to as first sensors 121 and 122. For example, the first sensors 121 and 122 are provided for the U phase and the V phase, respectively. The U-phase first sensors 121 and 122 detect the current flowing through the U-phase winding 3U. The V-phase first sensors 121 and 122 detect the current flowing through the V-phase winding 3V.

[0063] The sensors 123, 124 may be referred to as second sensors 123, 124. For example, the second sensors 123, 124 are provided for the V phase and the W phase, respectively. The V-phase second sensors 123, 124 detect the current flowing through the V-phase winding 3V. The W-phase second sensors 123, 124 detect the current flowing through the W-phase winding 3W.

[0064] In this embodiment, the U phase corresponds to the first phase, the V phase corresponds to the second phase, and the W phase corresponds to the third phase. First sensors 121 and 122 are provided for the first and second phases. Second sensors 123 and 124 are provided for the third and fourth phases. Second sensors 123 and 124 are provided for each of two of the three phases, including the phase in which the first sensors 121 and 122 are provided. For example, the current flowing through the V-phase winding 3V is detected by each of the first sensors 121 and 122 and the second sensors 123 and 124.

[0065] The first sensors 121, 122 detect the current flowing in the output line 13. The first sensors 121, 122 are provided on the output line 13 but not on the output line 14. The first sensors 121, 122 are provided on the output line 13 between the windings 3U, 3V and the inverter 8. The first sensors 121, 122 detect the current flowing in the output lines 13 of the U phase and the V phase as the current flowing in the windings 3U, 3V. The output line 13 corresponds to a first output path. The first current sensor 121 and the first series sensor 122 are connected in series on the output line 13.

[0066] The second sensors 123, 124 detect the current flowing in the output line 14. The second sensors 123, 124 are provided on the output line 14 but not on the output line 13. The second sensors 123, 124 are provided on the output line 14 between the windings 3V, 3W and the inverter 9. The second sensors 123, 124 detect the current flowing in the V-phase and W-phase output lines 14 as the current flowing in the windings 3V, 3W. The output line 14 corresponds to a second output path. The second current sensor 123 and the second series sensor 124 are connected in series on the output line 14.

[0067] The power conversion circuit 4 has a current path through which a current flows. The current path includes power lines 5 and 6, a selector switch 10, output lines 13 and 14, and windings 3U, 3V, and 3W. Between the first V-phase sensors 121 and 122 and the second V-phase sensors 123 and 124, a portion of output line 13, a portion of output line 14, and windings 3U, 3V, and 3W serve as the current path. Between the first V-phase sensors 121 and 122 and the second V-phase sensors 123 and 124, losses such as resistance loss and heat loss are likely to occur in the current path. In particular, losses occurring in windings 3U, 3V, and 3W tend to be larger than losses occurring in portions of output line 13 and output line 14. As described above, since the losses occurring in windings 3U, 3V, 3W are relatively large, differences tend to occur between the detection results of first V-phase sensors 121, 122 and second V-phase sensors 123, 124.

[0068] Power supply lines 5 and 6 connect inverter 8 and inverter 9 without passing through windings 3U, 3V, and 3W. In power supply line 5, wiring 5A connects upper arm 8H to upper arm 9H. In power supply line 6, wiring 6A connects lower arm 8L to lower arm 9L. Power supply lines 5 and 6 electrically connect DC power supply 2 to inverters 8 and 9.

[0069] <Power conversion module> Next, the structure of a power conversion module will be described with reference to Figures 7, 8, 9, and 10. Figure 7 is a plan view showing an example of a power conversion module. For convenience, the sealing body is omitted from Figure 7. Figure 8 is a view of the power conversion module with the cooler, housing, and sealing body omitted. In other words, it is a diagram showing circuit elements of the power conversion module. Figure 9 is a cross-sectional view taken along line IX-IX in Figure 7. Figure 10 is a cross-sectional view taken along line XX in Figure 7.

[0070] In the following, the thickness direction of the substrate is referred to as the Z direction, and the direction perpendicular to the Z direction is referred to as the X direction. The direction perpendicular to both the Z direction and the X direction is referred to as the Y direction. Unless otherwise specified, the shape viewed from the Z direction, in other words, the shape along the XY plane defined by the X and Y directions, is referred to as the planar shape. Furthermore, the planar view from the Z direction may sometimes be simply referred to as the planar view.

[0071] The power conversion module 20 provides at least a part of the above-described power conversion circuit 4. The power conversion module 20 includes a cooler 30, a housing 40, a substrate 50, a semiconductor element 60, a snubber component 70, a changeover switch 80, a clip 90, a bus bar 100, and a main terminal 110. The power conversion module 20 may also be referred to as a semiconductor module, an inverter module, a power conversion device, or the like. A circuit is formed by wiring members including the conductors of the substrate 50, the clip 90, and the bus bar 100, and electronic components including the semiconductor element 60, the snubber component 70, and the changeover switch 80 mounted on the substrate 50. The main terminal 110 is a terminal for external connection connected to the circuit.

[0072] The cooler 30 supports other elements constituting the power conversion module 20. The cooler 30 corresponds to a support member. The cooler 30 cools circuit elements of the power conversion module 20, such as the semiconductor device 60 and the snubber component 70. The cooler 30 is formed using a metal material such as Al or Cu. The illustrated cooler 30 has a case 31 and a lid 32. The case 31 and the lid 32 form a flow path 33 when the lid 32 is attached to the case 31. The case 31 is, for example, box-shaped with one side open. The lid 32 is fixed to the case 31 so as to close the opening of the case 31. Fins 34, for example, a plurality of pin fins, are provided on the inner surface of the lid 32. The fins 34 are arranged in the flow path 33. The flow path 33 extends, for example, in the X direction.

[0073] The cooler 30 has an inlet pipe 35 and an outlet pipe 36 provided on the side wall of the case 31. In the example shown in FIG. 9 , the inlet pipe 35 is attached to the side wall on the substrate 52 side in the X direction, and the outlet pipe 36 is attached to the side wall on the substrate 51 side. A refrigerant 37 is supplied to the flow path 33 via the inlet pipe 35. The refrigerant 37 that has flowed through the flow path 33 is discharged to the outside of the cooler 30 via the outlet pipe 36. A phase-change refrigerant such as water or ammonia, or a phase-non-change refrigerant such as an ethylene glycol-based refrigerant may be used as the refrigerant 37. For example, LLC may be used as the refrigerant 37. LLC is an abbreviation for long life coolant.

[0074] The cooler 30 has one surface 301 and a back surface 302. The back surface 302 is the surface opposite to the one surface 301 in the Z direction. A substrate 50 is disposed on the one surface 301. The flow path 33 is provided so as to overlap the semiconductor element 60 and the snubber component 70 in a plan view in order to effectively cool the semiconductor element 60, the snubber component 70, and the like. The flow path 33 is provided so as to overlap most of the substrate 50 in a plan view.

[0075] The cooler 30 is not limited to the configuration having the flow path 33 described above. A heat dissipation member such as a heat sink may be used as the cooler 30. A heat sink is sometimes referred to as a heat sink or a cooling plate. The heat dissipation member may include heat dissipation fins. If insulation of the substrate 50 from the cooler 30 is not required, a bonding material such as solder or sintered Ag may be interposed between the substrate 50 and the cooler 30. In other words, the substrate 50 may be bonded to one surface 301 of the cooler 30. If insulation is required, an electrically insulating member may be disposed between the substrate 50 and the cooler 30. For example, a ceramic plate or a resin sheet may be used as the insulating member. A TIM such as silicone gel may be used to improve thermal conductivity. TIM is an abbreviation for Thermal Interface Material. A support member that does not provide a cooling function may be used instead of the cooler 30.

[0076] The housing 40 is formed using an electrically insulating material such as resin. The housing 40 may be, for example, a resin molded body. The housing 40 may hold some of the elements of the power conversion module 20. Some of the elements may be integrally molded with the housing 40 as an insert part. The housing 40 may be fixed to the cooler 30. The housing 40 may be fixed to a case (not shown) that houses the power conversion module 20 together with the cooler 30. When the housing 40 is arranged on one side of the cooler 30, it provides, together with the cooler 30, a space for accommodating electronic components such as the substrate 50 and the semiconductor element 60 mounted on the substrate 50.

[0077] The illustrated housing 40 includes a frame body 41 and a partition wall 42. The frame body 41 has a predetermined height in the Z direction and is annular so as to surround the substrate 50 in a plan view in the Z direction. The frame body 41 may be referred to as an annular wall portion. The frame body 41 may be an approximately rectangular annular portion. The rectangular annular frame body 41 has four walls 411, 412, 413, and 414.

[0078] The wall portions 411 and 412 extend substantially in the X direction. The wall portions 411 and 412 are disposed opposite each other with a predetermined gap in the Y direction. The wall portion 411 is disposed on one end side of the substrate 50 in the Y direction, and the wall portion 412 is disposed on the other end side of the substrate 50. The wall portions 413 and 414 extend in the Y direction. The wall portion 413 is continuous with the wall portions 411 and 412 at one end side in the X direction. The wall portion 414 is continuous with the wall portions 411 and 412 at the other end side in the X direction.

[0079] The partition wall 42 has a predetermined height in the Z direction and is connected to the frame body 41. The partition wall 42 divides the area defined by the frame body 41. The partition wall 42 may divide the area into multiple areas, for example, corresponding to the number of substrates 50. The partition wall 42 is sometimes referred to as a partition wall. The partition wall 42 may extend in a predetermined direction, and both ends thereof may be connected to the frame body 41. The illustrated housing 40 has two partition walls 42. The partition walls 42 extend in the Y direction, similar to the wall portions 413 and 414. One end of each partition wall 42 is connected to the wall portion 411, and the other end is connected to the wall portion 412. The two partition walls 42 and the wall portions 413 and 414 are aligned in the X direction at a predetermined interval. The partition walls 42 divide the opposing area of ​​the frame body 41 into three areas. A substrate 50 is housed in each of the three divided areas.

[0080] As illustrated, a seal 43 may be disposed in the storage space formed by the housing 40 and the cooler 30. The seal 43 is disposed in the storage space and seals the substrate 50, electronic components mounted on the substrate 50, and the like. The seal 43 is, for example, a gel or a potting resin. The seal 43 fills the storage space so as not to exceed the upper end of the frame 41. Because the storage space is divided into multiple regions by the partition walls 42 as described above, the influence of stress due to expansion and contraction of the seal 43 on the electronic components mounted on the substrate 50 and the electrical connection structure can be reduced compared to a configuration without division.

[0081] The substrate 50 provides a wiring function. The substrate 50 may also be referred to as a wiring substrate, a printed circuit board, or the like. A semiconductor element 60, a snubber component 70, and a changeover switch 80 are mounted on the substrate 50. The substrate 50 has, for example, a substantially rectangular planar shape. The power conversion module 20 may include a single substrate 50 or multiple substrates 50. The illustrated substrate 50 includes three substrates 51, 52, and 53.

[0082] Substrate 51, together with electronic components mounted on substrate 51, constitutes a circuit on the inverter 8 side. Substrate 52, together with electronic components mounted on substrate 52, constitutes a circuit on the inverter 9 side. Substrate 51 has an insulating substrate 511 and a conductor arranged on insulating substrate 511. Substrate 52 has an insulating substrate 521 and a conductor arranged on insulating substrate 521. Substrate 53 has an insulating substrate 531 and a conductor arranged on insulating substrate 531. Insulating substrates 511, 521, and 531 are formed using an electrically insulating material such as ceramic or resin.

[0083] The conductors are formed from metals with good electrical and thermal conductivity, such as Cu or Al. The conductors may have a plating film of Ni, Au, or the like on their surfaces. The conductors may be arranged on only one surface of the insulating substrates 511, 521, and 531, or on both one surface and the back surface. The back surfaces of the insulating substrates 511, 521, and 531 are the surfaces facing the cooler 30 in the Z direction. The conductors may be arranged inside the insulating substrates 511, 521, and 531. That is, the substrates 51, 52, and 53 may be single-sided substrates, double-sided substrates, or multilayer substrates with three or more layers including inner layer wiring. The conductors may include via conductors. The via conductors are formed by arranging a conductor, such as a plating, in through holes (vias) formed in the insulating layers that constitute the insulating substrates 511, 521, and 531. The via conductors electrically connect conductors arranged on different layers.

[0084] The substrates 51 and 52 have a common structure. Substrates with the same specifications are used as the substrates 51 and 52. The substrates 51 and 52 are made of the same material and have the same planar shapes. The conductor patterns are also the same. The substrate 53 has a different structure from the substrates 51 and 52. The substrates 51, 52, and 53 all have a substantially rectangular shape in plan view. The substrates 51 and 52 and the substrate 53 have different planar shapes. In the Y direction, the length of the substrates 51 and 52 is substantially equal to the length of the substrate 53. In the X direction, the length of the substrate 53 is shorter than the length of the substrates 51 and 52. The conductor patterns of the substrates 51 and 52 and the substrate 53 are different. The power conversion module 20 includes two types of substrates 50, a total of three substrates 50.

[0085] The substrates 51, 52, and 53 are arranged on one surface 301 of the cooler 30. The substrates 51, 52, and 53 are lined up in the X direction. The substrate 53 is arranged between the substrates 51 and 52. In the X direction, the substrates are lined up in the order of substrate 51, substrate 53, and substrate 52. The substrates 51 and 52 are arranged facing the same direction relative to the cooler 30.

[0086] The illustrated substrate 51 has a conductor 512 arranged on one side and a conductor 513 arranged on the back side. The substrate 52 has a conductor 522 arranged on one side and a conductor 523 arranged on the back side. The substrate 53 has a conductor 532 arranged on one side and a conductor 533 arranged on the back side. The conductors 513, 523, and 533 are electrically isolated from the corresponding conductors 512, 522, and 532 by insulating substrates 511, 521, and 531. The conductors 513, 523, and 533 provide, for example, a heat dissipation function. The substrates 51, 52, and 53 are arranged in the cooler 30 with the conductors 513, 523, and 533 facing the cooler 30.

[0087] The conductors 512, 522, and 532 are patterned. The patterned conductors 512, 522, and 532 provide wiring functions. That is, they form a circuit together with the mounted electronic components. The conductors 512 of the substrate 51 include a P wiring 514, an N wiring 515, an O wiring 516, and a signal wiring 517. Each wiring is electrically separated by a predetermined gap. The P wiring 514 and the N wiring 515 are power wirings. The P wiring 514 may be referred to as a positive wiring or a high-potential power line. The N wiring 515 may be referred to as a negative wiring or a low-potential power line. The O wiring 516 may be referred to as an output wiring.

[0088] The P wiring 514 is connected to the drain electrode (drain terminal) of the semiconductor element 61H. A P bus bar 101, to which the P terminal 111 is connected, is joined to the P wiring 514. The P wiring 514 electrically connects the P terminal 111 and the semiconductor element 61H. The P wiring 514 is provided for each phase of the upper and lower arm circuits 8HL that constitute the inverter 8. The P wiring 514 extends approximately in the Y direction. The three P wirings 514 are lined up in the X direction at a predetermined interval. The P wiring 514 has wirings 514A, 514B, and 514C. The wiring 514A extends in the Y direction. The wiring 514B is connected to one end of the wiring 514A, and the wiring 514C is connected to the other end.

[0089] Wiring 514B is disposed near an end of substrate 51 in the Y direction. Wiring 514B extends in the X direction from wiring 514A. P bus bar 101 is joined to wiring 514B. Wiring 514C is located in the middle of substrate 51 in the Y direction. Wiring 514C extends in the X direction from wiring 514A at the end opposite to wiring 514B. A corresponding semiconductor element 61H (drain terminal) is joined to wiring 514C.

[0090] Of the three P wirings 514 lined up in the X direction, the P wiring 514 arranged at the end closest to the substrate 52 and the P wiring 514 arranged in the middle are arranged in the same direction. Of these two P wirings 514, wirings 514B and 514C extend from wiring 514A in a direction away from the substrate 52. The remaining P wiring 514 is arranged in a mirror image of the other two, that is, in a line-symmetrical arrangement with respect to an imaginary line substantially parallel to the Y direction. In this P wiring 514, wirings 514B and 514C extend from wiring 514A in a direction approaching the substrate 52.

[0091] The N wiring 515 is electrically connected to the source electrode (source terminal) of the semiconductor element 61L via a clip 912. An N bus bar 102, to which the N terminals 112 are connected, is joined to the N wiring 515. The N wiring 515 electrically connects the N terminals 112 and the semiconductor element 61L. The N wiring 515 has wirings 515A and 515B. The wiring 515A is arranged in the middle of the substrate 51 in the Y direction. The wiring 515A is arranged between the P wiring 514 and the O wiring 516. The wiring 515A extends approximately in the X direction. The wiring 515A extends from near one end of the substrate 51 to near the other end in the X direction. The three-phase semiconductor elements 61L are commonly connected to the wiring 515A via the corresponding clips 912.

[0092] The wiring 515B extends roughly in the Y direction. The wiring 515B has roughly the same length in the Y direction as the P wiring 514 (wiring 514A). The wiring 515B is arranged alternately with the P wiring 514 in the X direction and between the P wirings 514. That is, the N wiring 515 has two wirings 515B. In the X direction, the wirings are arranged in the following order: P wiring 514, wiring 515B, P wiring 514, wiring 515B, P wiring 514. One of the ends of the wiring 515B is arranged near the end of the substrate 51 in the Y direction. The N bus bar 102 is joined to one of the ends of the wiring 515B. The other end of the wiring 515B is connected to the wiring 515A.

[0093] The O wiring 516 is connected to the drain electrode (drain terminal) of the semiconductor element 61L. The O terminal 115 is joined to the O wiring 516. The source terminal of the semiconductor element 61H is electrically connected to the O wiring 516 via a clip 911. The O wiring 516 electrically connects the source terminal of the semiconductor element 61H, the drain terminal of the semiconductor element 61L, and the O terminal 115. The O wiring 516 is provided for each phase. The O wiring 516 is aligned in the Y direction with the P wiring 514 of the corresponding phase via wiring 515A. The O wiring 516 is substantially L-shaped in plan view.

[0094] The signal wiring 517 electrically connects the pads of the semiconductor elements 61H and 61L to signal terminals (not shown). The signal wiring 517 is electrically connected to the pads via, for example, bonding wires. The signal wiring 517 is, for example, a signal island formed on the corresponding substrate 51. For convenience, FIG. 5 shows one signal wiring 517 for each semiconductor element 61H, 61L. The signal wiring 517 is aligned with the corresponding semiconductor element 61H in the Y direction. The signal wiring 517 corresponding to the semiconductor element 61H is arranged closer to the wiring 514B than the semiconductor element 61H. The signal wiring 517 is aligned with the corresponding semiconductor element 61L in the X direction. The signal wiring 517 corresponding to the semiconductor element 61L is arranged closer to the substrate 52 than the semiconductor element 61L.

[0095] As described above, the substrate 52 has the same configuration as the substrate 51. The substrate 52 is disposed in the same orientation as the substrate 51 with respect to the cooler 30. The conductor 522 of the substrate 52 is patterned in the same manner as the conductor 512. The conductor 522 includes a P wiring 524, an N wiring 525, an O wiring 526, and a signal wiring 527. The P wiring 524 has the same configuration as the P wiring 514. The P wiring 524 has wirings 524A, 524B, and 524C. The N wiring 525 has the same configuration as the N wiring 515. The N wiring 525 has wirings 525A and 525B. The P wiring 524 and the N wiring 525 are power supply wirings. The O wiring 526 has the same configuration as the O wiring 516. The signal wiring 527 has the same configuration as the signal wiring 517.

[0096] The conductor 532 of the substrate 53 includes a P wiring 534, an N wiring 535, and a signal wiring 537. The P wiring 534 and the N wiring 535 are power wiring that connect the inverter 8 and the inverter 9. The P wiring 534 connects the P wiring 514 of the substrate 51 and the P wiring 524 of the substrate 52. The P wiring 534 extends generally in the arrangement direction of the substrates 51 and 52, that is, in the X direction. The P wiring 534 is divided into two in the extension direction. The P bus bar 105 and the changeover switch 81 are joined to the P wiring 534 on the substrate 51 side. The clip 931 and the P bus bar 106 are joined to the P wiring 534 on the substrate 52 side.

[0097] The N wiring 535 connects the N wiring 515 of the substrate 51 and the N wiring 525 of the substrate 52. The N wiring 535 extends generally in the X direction. The N wiring 535 is divided into two in the extension direction. The N bus bar 107 and the clip 932 are joined to the N wiring 535 on the substrate 51 side. The changeover switch 82 and the N bus bar 108 are joined to the N wiring 535 on the substrate 52 side. The N wiring 535 and the N wirings 515, 525 (wirings 515A, 525A) are arranged on an imaginary line that is generally parallel to the X direction. The N wiring 535 and the P wiring 534 are arranged so as to be shifted in the Y direction. The connection position between the N wiring 535 and the N wirings 515, 525 is shifted in the Y direction with respect to the connection position between the P wiring 534 and the P wirings 514, 524.

[0098] The signal wiring 537 electrically connects the pad of the changeover switch 80 to a signal terminal (not shown). The signal wiring 537 is electrically connected to the pad via, for example, a bonding wire. The signal wiring 537 is, for example, a signal island formed on the corresponding substrate 53. For convenience, one signal wiring 537 is shown for one changeover switch 80 in FIG. 5. The signal wiring 537 is aligned with the changeover switch 80 in the Y direction. The signal wiring 537 is arranged on the opposite side of the N wiring 535 with respect to the changeover switch 81. The signal wiring 537 is arranged on the P wiring 534 side with respect to the changeover switch 82.

[0099] The semiconductor element 60 is an electronic component that provides the inverters 8 and 9. The semiconductor element 60 is formed by forming a vertical element on a semiconductor substrate made of silicon (Si), a wide bandgap semiconductor with a wider bandgap than silicon, or the like. Examples of wide bandgap semiconductors include silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), and diamond. The semiconductor element 60 may also be called a power element, a semiconductor chip, or the like.

[0100] The vertical element is configured to pass a main current in the thickness direction of the semiconductor element 60 (semiconductor substrate). The semiconductor element 60 is arranged so that its thickness direction is approximately parallel to the Z direction. The semiconductor element 60 has main electrodes (main terminals) on both sides in the thickness direction. In the illustrated power conversion module 20, the semiconductor element 60 is formed by forming an n-channel MOSFET as a vertical element on a semiconductor substrate made of SiC. The semiconductor element 60 has a drain electrode (drain terminal) on its bottom surface facing the substrate 50 (51, 52) and a source electrode (source terminal) on its top surface opposite the bottom surface.

[0101] When a MOSFET is turned on, a current (main current) flows between the main terminals, that is, between the drain terminal and the source terminal. If the diode is a parasitic diode, the source terminal also serves as the anode terminal, and the drain terminal also serves as the cathode terminal. The diode may be formed on a chip separate from the MOSFET. The drain terminal is the main electrode on the high potential side, and the source terminal is the main terminal on the low potential side. The drain terminal is formed over almost the entire bottom surface. The source terminal is formed on a part of the top surface.

[0102] The semiconductor element 60 has a generally rectangular shape in plan view. The semiconductor element 60 has pads, which are signal terminals, on its upper surface. The pads are formed at positions on the upper surface that are different from the source terminals. The pads include at least a gate pad.

[0103] The multiple semiconductor elements 60 include a semiconductor element 61H that constitutes the upper arm 8H, a semiconductor element 61L that constitutes the lower arm 8L, a semiconductor element 62H that constitutes the upper arm 9H, and a semiconductor element 62L that constitutes the lower arm 9L. The semiconductor elements 60 include three semiconductor elements each, 61H, 61L, 62H, and 62L. The semiconductor elements 61H, 61L, 62H, and 62L are provided for each phase. One semiconductor element 60 provides one arm. In the following, the semiconductor elements 61H and 62H may refer to upper arm elements. The semiconductor elements 61L and 62L may be referred to as lower arm elements.

[0104] Semiconductor elements 61H and 61L are mounted on substrate 51. Semiconductor element 61H is arranged to overlap wiring 514C of P wiring 514 in a plan view. The drain terminal of semiconductor element 61H is joined to P wiring 514 via a bonding material such as solder (not shown). Semiconductor element 61L is arranged to overlap O wiring 516 in a plan view. The drain terminal of semiconductor element 61L is joined to O wiring 516 via a bonding material (not shown).

[0105] The semiconductor elements 61H of each phase are aligned in the X direction. The semiconductor elements 61L of each phase are aligned in the X direction. The semiconductor elements 61H, 61L of corresponding phases are aligned roughly in the Y direction. The semiconductor elements 61H, 61L of corresponding phases are arranged offset in the X direction so that only portions of them face each other in the Y direction. The semiconductor elements 61H, 61L are arranged offset by 90 degrees around an axis approximately parallel to the Z direction. The pads of the semiconductor element 61H are arranged on the wiring 514B side in the Y direction. The pads of the semiconductor element 61L are arranged on the substrate 52 side in the X direction.

[0106] Semiconductor elements 62H and 62L are mounted on the substrate 52. Semiconductor element 62H has the same structure as semiconductor element 61H. That is, semiconductor elements with the same specifications are used as semiconductor elements 61H and 62H. The arrangement of semiconductor element 62H on substrate 52 is the same as the arrangement of semiconductor element 61H on substrate 51. Semiconductor element 62L has the same structure as semiconductor element 61L. That is, semiconductor elements with the same specifications are used as semiconductor elements 61L and 62L. The arrangement of semiconductor element 62L on substrate 52 is the same as the arrangement of semiconductor element 61L on substrate 51. Semiconductor elements 61H, 61L, 62H, and 62L have common specifications.

[0107] The semiconductor element 62H is disposed so as to overlap with the wiring 524C in a plan view. The drain terminal of the semiconductor element 62H is bonded to the wiring 524C via a bonding material (not shown). The semiconductor element 62L is disposed so as to overlap with the O wiring 526 in a plan view. The drain terminal of the semiconductor element 62L is bonded to the O wiring 526 via a bonding material (not shown).

[0108] The semiconductor elements 62H of each phase are aligned in the X direction. The semiconductor elements 62L of each phase are aligned in the X direction. The semiconductor elements 62H, 62L of corresponding phases are aligned roughly in the Y direction. The semiconductor elements 62H, 62L of corresponding phases are arranged offset in the X direction so that only portions of them face each other in the Y direction. The semiconductor elements 62H, 62L are arranged offset by 90 degrees around an axis approximately parallel to the Z direction. The pads of the semiconductor element 62H are arranged on the wiring 524B side in the Y direction. The pads of the semiconductor element 62L are arranged on the opposite side of the substrate 51 in the X direction.

[0109] The snubber component 70 is an electronic component that provides a snubber circuit. The snubber component 70 includes a snubber component 71 that provides the snubber circuit 12 and a snubber component 72 that provides the snubber circuit 11. For convenience, FIGS. 7 to 9 show a simplified illustration. The snubber component 71 has at least a capacitor to provide the snubber circuit 12. The snubber component 71 is mounted on the substrate 51. As described above, the snubber component 71 is connected in parallel to the upper and lower arm circuits 8HL. The snubber component 71 electrically bridges the P wiring 514 and the N wiring 515. In the illustrated power conversion module 20, a snubber component 71 is provided for each phase. The snubber component 71 electrically bridges the wiring 514A and the wiring 515B. The snubber component 71 electrically bridges the P wiring 514 and the N wiring 515 at a position closer to the wiring 514B than the semiconductor element 61H. Of the two wirings 515B, one snubber component 71 is connected to the wiring 515B closer to the substrate 52, and two snubber components 71 are commonly connected to the wiring 515B farther from the substrate 52. The snubber components 71 for each phase are aligned in the X direction.

[0110] The snubber component 72 has the same structure as the snubber component 71. That is, snubber components with the same specifications are used as the snubber components 71, 72. The arrangement of the snubber components 72 on the substrate 52 is the same as the arrangement of the snubber components 71 on the substrate 51. In the illustrated power conversion module 20, the snubber component 72 is provided for each phase. The snubber component 72 electrically bridges the wiring 524A and the wiring 525B. The snubber component 72 electrically bridges the P wiring 524 and the N wiring 525 at a position closer to the wiring 524B than the semiconductor element 62H. Of the two wirings 525B, one snubber component 72 is connected to the wiring 525B farther from the substrate 51, and two snubber components 72 are commonly connected to the wiring 525B farther from the substrate 51. The snubber components 72 for each phase are lined up in the X direction.

[0111] The changeover switch 80 functions as the changeover switch 10 in the power conversion circuit 4. The changeover switch 80 is formed by forming a switching element on a semiconductor substrate. In the illustrated power conversion module 20, the changeover switch 80 has a configuration similar to that of the semiconductor element 60. The changeover switch 80 is formed by forming a MOSFET on the semiconductor substrate. A parasitic diode is connected in antiparallel to the MOSFET.

[0112] In the illustrated power conversion module 20, the changeover switch 80 is mounted on the substrate 53. The changeover switch 80 includes changeover switches 81 and 82. The changeover switches 81 and 82 are aligned approximately in the Y direction. The changeover switch 81 is provided on the P wiring 534. The changeover switch 81 is arranged so as to overlap with the P wiring 534 on the substrate 51 side in a plan view. The drain terminal of the changeover switch 81 is joined to the P wiring 534. The source terminal of the changeover switch 81 is connected to the N wiring 535 on the substrate 52 side via a clip 931. The pad of the changeover switch 81 is arranged on the side of the corresponding signal wiring 537 in the Y direction.

[0113] The changeover switch 82 is provided on the N wiring 535. The changeover switch 82 is arranged so as to overlap with the N wiring 535 on the substrate 52 side in a plan view. The drain terminal of the changeover switch 82 is joined to the N wiring 535. The source terminal of the changeover switch 82 is connected to the N wiring 535 on the substrate 51 side via a clip 932. The pad of the changeover switch 82 is arranged on the side of the corresponding signal wiring 537 in the Y direction.

[0114] The clip 90 bridges the electronic component and the conductor (wiring). The clip 90 may also be referred to as a bridging member, relay member, or metal bridge. The clip 90 is a metal plate made of a highly conductive metal such as Cu or a Cu alloy. The clip 90 may be formed by punching and pressing a metal plate of a predetermined thickness. The clip 90 may also be formed using a profiled material with a different thickness in some areas. The clip 90 may have a film applied to the surface of the base material by surface treatment. The clip 90 may have a plated film of Ni, Au, or the like on its surface. The clip 90 may have a Ni plated film containing P formed on the base material. The NiP film is formed, for example, by electroless plating. Instead of Cu, Ag, Au, Al, or Mg may be used as the base material. Instead of Ni or Au, Sn, Ag, or the like may be used as the film applied to the base material.

[0115] The clips 90 include clips 911 and 912 mounted on the substrate 51, clips 921 and 922 mounted on the substrate 52, and clips 931 and 932 mounted on the substrate 53. The clip 911 is connected to the semiconductor element 61H. The clip 911 is provided individually for the semiconductor element 61H. The clip 911 extends generally in the Y direction and electrically connects the source terminal of the semiconductor element 61H to the O wiring 516. The clip 912 is connected to the semiconductor element 61L. The clip 912 is provided individually for the semiconductor element 61L. The clip 912 extends generally in the Y direction and electrically connects the source terminal of the semiconductor element 61L to the wiring 515A of the N wiring 515. The clips 911 and 912, together with the semiconductor elements 61H and 61L, the P wiring 514, the N wiring 515, and the O wiring 516, configure the inverter 8.

[0116] The clip 921 has the same structure as the clip 911. That is, clips with the same specifications are used as the clips 911 and 921. The arrangement of the clip 921 on the substrate 52 is the same as the arrangement of the clip 911 on the substrate 51. In the illustrated power conversion module 20, the clip 922 has the same structure as the clip 912. That is, clips with the same specifications are used as the clips 912 and 922. The arrangement of the clip 922 on the substrate 52 is the same as the arrangement of the clip 912 on the substrate 51.

[0117] In the illustrated power conversion module 20, the clip 921 is connected to the semiconductor element 62H. The clip 921 is provided individually for the semiconductor element 62H. The clip 921 extends generally in the Y direction and electrically connects the source terminal of the semiconductor element 62H to the O wiring 526. The clip 922 is connected to the semiconductor element 62L. The clip 922 is provided individually for the semiconductor element 62L. The clip 922 extends generally in the Y direction and electrically connects the source terminal of the semiconductor element 62L to the wiring 525A of the N wiring 525. The clips 921 and 922, together with the semiconductor elements 62H and 62L, the P wiring 524, the N wiring 525, and the O wiring 526, configure the inverter 9.

[0118] The clip 931 is connected to the changeover switch 81. The clip 931 extends generally in the X direction. The clip 931 electrically connects the source terminal of the changeover switch 81 mounted on the P wiring 534 on the substrate 51 side to the P wiring 534 on the substrate 52 side. The clip 932 is connected to the changeover switch 82. The clip 932 extends generally in the X direction. The clip 932 electrically connects the source terminal of the changeover switch 82 mounted on the N wiring 535 on the substrate 52 side to the N wiring 535 on the substrate 51 side.

[0119] The busbar 100 electrically connects the conductors (wiring) of the substrate 50. The busbar 100 electrically connects the conductors and the main terminal 110. The busbar 100 may also be referred to as a lead, a wiring member, or the like. The busbar 100 is a plate material formed using a metal material with good conductivity, such as Cu. In the illustrated power conversion module 20, the busbar 100 is held in the housing 40. The busbar 100 includes a P busbar 101 and an N busbar 102 mounted on the substrate 51, and a P busbar 103 and an N busbar 104 mounted on the substrate 52.

[0120] P bus bar 101 commonly connects P wiring 514 provided for each phase. The portion of P bus bar 101 that connects to substrate 51 is branched into three, and each is joined to a corresponding wiring 514B. A P terminal 111 is connected to the end of P bus bar 101 opposite substrate 51 in the Y direction. N bus bar 102 commonly connects multiple wirings 515B. The portion of N bus bar 102 that connects to substrate 51 is branched into two, and each is joined to a corresponding wiring 515B. An N terminal 112 is connected to the end of N bus bar 102 opposite substrate 51 in the Y direction.

[0121] P bus bar 103 has the same structure as P bus bar 101. That is, bus bars with the same specifications are used for P bus bars 101, 103. The arrangement of P bus bar 103 on substrate 52 is the same as the arrangement of P bus bar 101 on substrate 51. N bus bar 104 has the same structure as N bus bar 102. That is, bus bars with the same specifications are used for N bus bars 102, 104. The arrangement of N bus bar 104 on substrate 52 is the same as the arrangement of N bus bar 102 on substrate 51.

[0122] P bus bar 103 commonly connects P wiring 524 provided for each phase. The portion of P bus bar 103 that connects to substrate 52 is branched into three, and each is joined to a corresponding wiring 524B. P terminal 113 is connected to the end of P bus bar 103 on the opposite side from substrate 52 in the Y direction. N bus bar 104 commonly connects multiple wirings 525B. The portion of N bus bar 104 that connects to substrate 52 is branched into two, and each is joined to a corresponding wiring 525B.

[0123] P bus bars 101, 103 and N bus bars 102, 104 are held (inserted) in wall portion 411 of frame 41. Board connection portions of P bus bars 101, 103 and N bus bars 102, 104 protrude from wall portion 411 into the accommodation space and are joined to corresponding wiring.

[0124] Bus bar 100 further includes P bus bars 105 and 106 and N bus bars 107 and 108. P bus bar 105 extends in the X direction in a plan view. One end of P bus bar 105 is joined to P wiring 514 (wiring 514A) closest to substrate 52, and the other end is joined to P wiring 534. P bus bar 106 extends in the X direction in a plan view. One end of P bus bar 106 is joined to P wiring 524 (wiring 524A) closest to substrate 51, and the other end is joined to P wiring 534. N bus bar 107 extends in the X direction in a plan view. One end of N bus bar 107 is joined to the end of N wiring 515 (wiring 515A) on the substrate 52 side, and the other end is joined to N wiring 535. N bus bar 108 extends in the X direction in a plan view. One end of N bus bar 108 is joined to the end of N wiring 525 (wiring 525A) on the substrate 51 side, and the other end is joined to N wiring 535.

[0125] P bus bar 105 and N bus bar 107 are held by partition wall 42 located between boards 51 and 53. P bus bar 106 and N bus bar 108 are held by partition wall 42 located between boards 52 and 53. The board connection portions of P bus bars 105 and 106 and N bus bars 107 and 108 protrude from partition wall 42 into the accommodation space and are joined to the corresponding wiring.

[0126] Like the busbar 100, the main terminal 110 is a plate material formed using a metal material with good conductivity, such as Cu. The main terminal 110 is an external connection terminal that is electrically connected to the main terminal (main electrode) of the semiconductor element 60. The main terminal 110 includes a P terminal 111 and an N terminal 112, a P terminal 113, and O terminals 115 and 116, which are power supply terminals. In FIG. 8, the boundary between the busbar 100 and the main terminal 110 is indicated by a two-dot chain line.

[0127] The power supply terminal is an external connection terminal electrically connected to the above-described capacitor device 22 (smoothing capacitor 7). The P terminal 111 is an external connection terminal connected to the positive terminal of the capacitor device 22 via the P bus bar 25P. The P terminal 111 is connected to the P bus bar 101. The P terminal 111 may be connected to the P bus bar 101 continuously and integrally, or may be connected by joining. The P terminal 111 may also be referred to as a positive terminal, a high-potential power supply terminal, or the like. The P terminal 111 is mounted on the substrate 51 via the P bus bar 101. The P terminal 111 extends outward in the Y direction from the wall portion 411 of the frame 41 to a position where it does not overlap with the cooler 30 in a plan view.

[0128] The N terminal 112 is an external connection terminal connected to the negative terminal of the capacitor device 22 via the N bus bar 25N. The N terminal 112 is connected to the N bus bar 102. The N terminal 112 may be connected to the N bus bar 102 continuously and integrally, or may be connected by joining. The N terminal 112 may also be referred to as a negative terminal, a low-potential power supply terminal, or the like. The N terminal 112 is mounted on the substrate 51 via the N bus bar 102. The N terminal 112 extends outward in the Y direction from the wall portion 411 of the frame 41 to a position where it does not overlap with the cooler 30 in a plan view. The N terminal 112 is located closer to the substrate 52 in the X direction than the P terminal 111.

[0129] The P terminal 113 is an external connection terminal that is connected to the positive terminal of the external device 23 via the P bus bar 26P. The P terminal 113 is connected to the P bus bar 103. The P terminal 113 is electrically connected to the P wiring 524 via the P bus bar 103. The P terminal 113 is sometimes referred to as a charging terminal. The P terminal 113 may be connected integrally with the P bus bar 103, or may be connected by joining. The P terminal 113 is mounted on the substrate 52 via the P bus bar 103. The P terminal 113 extends outward in the Y direction from the wall portion 411 of the frame 41 to a position that does not overlap with the cooler 30 in a plan view.

[0130] In a plan view, the position of P terminal 113 relative to substrate 52 is different from the position of P terminal 111 relative to substrate 51. The connection position of P terminal 113 relative to P bus bar 103 is different from the connection position of P terminal 111 relative to P bus bar 101. As shown in FIGS. 7 and 8 , P terminal 111 is connected to the vicinity of the end of P bus bar 101 on the wall portion 413 side. P terminal 113 is connected to the vicinity of the end of P bus bar 103 on the wall portion 414 side. In the X direction, P terminal 111, N terminal 112, and P terminal 113 are lined up in this order. In other words, P terminal 113 is located at one end in the arrangement direction, and P terminal 111 is located at the other end.

[0131] The O terminals 115, 116 are electrically connected to the windings 3U, 3V, 3W of the corresponding phases of the rotating electric machine 3. The O terminals 115, 116 may be referred to as output terminals, AC terminals, etc. The O terminal 115 is joined to the O wiring 516. An O terminal 115 is provided for each phase of the upper and lower arm circuits 8HL. The O terminal 115, together with the O wiring 516, provides the output line 13. The O terminal 115 extends substantially in the Y direction from the joint with the O wiring 516. The O terminal 115 extends outward in the Y direction from the wall portion 412 of the frame body 41 to a position where it does not overlap with the cooler 30 in a plan view.

[0132] The multiple O terminals 115 include O terminals 115a, 115b, and 115c. The O terminals 115a, 115b, and 115c are aligned in the X direction along the wall portion 412. The O terminals 115a, 115b, and 115c are O terminals 115 of any of the three phases. For example, the O terminal 115a is the O terminal 115 of the U phase and forms at least a part of the output line 13 of the U phase. The O terminal 115b is the O terminal 115 of the V phase and forms at least a part of the output line 13 of the V phase. The O terminal 115c is the O terminal 115 of the W phase and forms at least a part of the output line 13 of the W phase.

[0133] The O terminal 116 is joined to the O wiring 526. The O terminal 116 is provided for each phase of the upper and lower arm circuits 9HL. The O terminal 116, together with the O wiring 526, provides the output line 14. The O terminal 116 extends generally in the Y direction from the joint with the O wiring 526. The O terminal 116 extends outward in the Y direction from the wall portion 412 to a position where it does not overlap with the cooler 30 in a plan view. In the illustrated power conversion module 20, the O terminal 116 has the same structure as the O terminal 115. That is, external connection terminals with the same specifications are used as the O terminals 115, 116. The arrangement of the O terminal 116 on the substrate 52 is the same as the arrangement of the O terminal 115 on the substrate 51.

[0134] The multiple O terminals 116 include O terminals 116a, 116b, and 116c. The O terminals 116a, 116b, and 116c are aligned in the X direction along the wall portion 412. The O terminals 116a, 116b, and 116c are O terminals 116 of any of the three phases. For example, the O terminal 116a is the O terminal 116 of the U phase and forms at least a part of the output line 14 of the U phase. The O terminal 116b is the O terminal 116 of the V phase and forms at least a part of the output line 14 of the V phase. The O terminal 116c is the O terminal 116 of the W phase and forms at least a part of the output line 14 of the W phase.

[0135] The power conversion module 20 includes two circuit units 201 and 202 that provide a power conversion circuit 4. The circuit unit 201 includes a substrate 51 and components mounted on the substrate 51. The circuit unit 201 includes, as components mounted on the substrate 51, semiconductor elements 61H and 61L, a snubber component 71, clips 911 and 912, a P bus bar 101, and an N bus bar 102. The circuit unit 201 provides an inverter 8 and a snubber circuit 12. The circuit unit 202 includes a substrate 52 and components mounted on the substrate 52. The circuit unit 202 includes, as components mounted on the substrate 52, semiconductor elements 62H and 62L, a snubber component 72, clips 921 and 922, a P bus bar 103, and an N bus bar 104. The circuit unit 202 provides an inverter 9 and a snubber circuit 11.

[0136] In the power conversion module 20, the O wiring 516 and the O terminal 115 form at least a part of the output line 13. The O wiring 516 and the O terminal 115 are formed of a conductive material such as copper and are conductive. For example, the O terminal 115 is formed of a bus bar member. The O terminal 115 is connected to the output bus bar 27out. The semiconductor elements 61H, 61L are electrically connected to one ends of the windings 3U, 3V, and 3W via the O wiring 516 and the O terminal 115. The O wiring 516 is included in the conductor 512 and is therefore included in the substrate 51. The semiconductor elements 61H, 61L correspond to the first semiconductor element, and the O wiring 516 and the O terminal 115 correspond to the first output conductor portion. The O terminal 115 corresponds to the first bus bar. The substrate 51 corresponds to the first substrate, and the O wiring 516 corresponds to the first substrate wiring.

[0137] Furthermore, O wiring 526 and O terminal 116 form at least a part of output line 14. O wiring 526 and O terminal 116 are formed of a conductive material such as copper and are conductive. For example, O terminal 116 is formed of a bus bar member. O terminal 116 is connected to output bus bar 27out. Semiconductor elements 62H, 62L are electrically connected to the other ends of windings 3U, 3V, 3W via O wiring 526 and O terminal 116. O wiring 526 is included in conductor 522 and is therefore included in substrate 52. Semiconductor elements 62H, 62L correspond to the second semiconductor element, and O wiring 526 and O terminal 116 correspond to the second output conductor portion. O terminal 116 corresponds to the second bus bar. Substrate 52 corresponds to the second substrate, and O wiring 526 corresponds to the second substrate wiring.

[0138] As described above, the elements that constitute the circuit units 201 and 202 and that are related to each other have a common structure. Furthermore, the arrangement of the components mounted on the board 52 is substantially the same as the arrangement of the components mounted on the board 51. Therefore, the circuit units 201 and 202 have a common structure. Circuit units with the same specifications are used as the circuit units 201 and 202. Note that "common" or "identical" may include errors on the order of manufacturing variations. The circuit unit 201 corresponds to the first circuit unit, and the circuit unit 202 corresponds to the second circuit unit.

[0139] As shown in FIGS. 7, 8, and 11, the power conversion module 20 has a first sensor unit 130 and a second sensor unit 140. The first sensor unit 130 provides first sensors 121 and 122. The first sensor unit 130 is provided in the circuit unit 201. The first sensor unit 130 is provided in the first output conductor unit and detects a current flowing through the first output conductor unit. For example, the first sensor unit 130 is provided in the O terminal 115 and outputs a detection signal corresponding to the current flowing through the O terminal 115. The first sensor unit 130 is electrically connected to the control board 45 and outputs the detection signal to the control board 45.

[0140] A first sensor unit 130 is provided in each of at least two O terminals 115. That is, a first sensor unit 130 is provided in at least two of the three phases. For example, a first sensor unit 130 is provided in a U phase and a V phase. The U-phase first sensor unit 130 is provided in O terminal 115a and detects the current flowing through O terminal 115a. The V-phase first sensor unit 130 is provided in O terminal 115b and detects the current flowing through O terminal 115b. O terminals 115a and 115b are detection targets whose currents are detected by first sensor units 130. O terminals 115a and 115b correspond to first target conductor portions.

[0141] The first sensor section 130 has a first sensor element 131, a first series element 132, and a first case 133. The elements 131 and 132 are sometimes referred to as first elements 131 and 132. The first case 133 houses the first elements 131 and 132. The first case 133 is formed from a resin material or the like. The first case 133 is fixed to the O terminal 115 and the housing 40, and thereby fixed to the circuit unit 201. The O terminal 115 penetrates the first case 133.

[0142] The first elements 131 and 132 are provided in the O terminal 115 so as to detect a current flowing through the O terminal 115. For example, the first elements 131 and 132 are provided at positions facing the plate surface of the O terminal 115. The first sensor element 131 and the first series element 132 are aligned along the plate surface of the O terminal 115. The first sensor element 131 and the first series element 132 are aligned in the direction in which a current flows in the O terminal 115. For example, the first sensor element 131 and the first series element 132 are aligned in the Y direction.

[0143] The first elements 131 and 132 are detection elements that detect current. Examples of detection elements include sensor elements such as Hall elements and resistive elements such as shunt resistors. The first elements 131 and 132 output detection signals according to the current flowing through the O terminal 115. The detection signals of the first elements 131 and 132 form the detection signals of the first sensors 121 and 122. The first elements 131 and 132 correspond to a current detection unit. The first sensor element 131 corresponds to a first target detection unit. The first series element 132 corresponds to a first common detection unit.

[0144] The first sensor unit 130 may include a sensor substrate and a sensor bus bar. The sensor substrate includes a processing circuit that processes the detection signals of the first elements 131 and 132. The processing circuit may include an amplifier circuit that amplifies the detection signals of the first elements 131 and 132. The first elements 131 and 132 are provided on the sensor bus bar. The sensor bus bar is connected to the O terminal 115 and forms a first target conductor portion together with the O terminal 115. The first elements 131 and 132 detect the current flowing in the O terminal 115 by detecting the current flowing in the sensor bus bar.

[0145] The second sensor unit 140 provides the second sensors 123 and 124. The second sensor unit 140 is provided in the circuit unit 201. The second sensor unit 140 is provided in the second output conductor portion and detects the current flowing in the second output conductor portion. For example, the second sensor unit 140 is provided in the O terminal 116 and outputs a detection signal corresponding to the current flowing in the O terminal 116. The second sensor unit 140 is electrically connected to the control board 45 and outputs the detection signal to the control board 45.

[0146] A second sensor unit 140 is provided in each of the at least two O terminals 116. That is, the second sensor unit 140 is provided in at least two of the three phases. For example, the second sensor unit 140 is provided in the V phase and the W phase. The V-phase second sensor unit 140 is provided in the O terminal 116b and detects the current flowing through the O terminal 116b. The W-phase second sensor unit 140 is provided in the O terminal 116c and detects the current flowing through the O terminal 116c. The O terminals 116b and 116c are detection targets whose currents are detected by the second sensor unit 140. The O terminals 116b and 116c correspond to second target conductor portions.

[0147] The second sensor section 140 has a second sensor element 141, a second series element 142, and a second case 143. The elements 141 and 142 are sometimes referred to as second elements 141 and 142. The second case 143 houses the second elements 141 and 142. The second case 143 is formed from a resin material or the like. The second case 143 is fixed to the O terminal 116 and the housing 40, and thereby fixed to the circuit unit 202. The O terminal 116 penetrates the second case 143.

[0148] The second elements 141 and 142 are provided in the O terminal 116 so as to detect the current flowing through the O terminal 116. For example, the second elements 141 and 142 are provided at positions facing the plate surface of the O terminal 116. The second sensor element 141 and the second series element 142 are aligned along the plate surface of the O terminal 116. The second sensor element 141 and the second series element 142 are aligned in the direction in which the current flows in the O terminal 116. For example, the second sensor element 141 and the second series element 142 are aligned in the Y direction.

[0149] The second elements 141 and 142 are detection elements that detect current. Examples of detection elements include sensor elements such as Hall elements and resistive elements such as shunt resistors. The second elements 141 and 142 output detection signals according to the current flowing through the O terminal 116. The detection signals of the second elements 141 and 142 form the detection signals of the first sensors 121 and 122. The second elements 141 and 142 correspond to a current detection unit. The second sensor element 141 corresponds to a second target detection unit. The second series element 142 corresponds to a second common detection unit.

[0150] The second sensor unit 140 may have a sensor substrate and a sensor bus bar. The sensor substrate has a processing circuit that processes the detection signals of the second elements 141 and 142. The processing circuit may be an amplifier circuit that amplifies the detection signals of the second elements 141 and 142. The second elements 141 and 142 are provided on the sensor bus bar. The sensor bus bar is connected to the O terminal 116 and forms a first target conductor portion together with the O terminal 116. The second elements 141 and 142 detect the current flowing in the O terminal 116 by detecting the current flowing in the sensor bus bar.

[0151] The power conversion module 20 has a first module 20Aa and a second module 20Bb. In this embodiment, the power conversion module 20 is formed by attaching a housing 40 and a cooler 30 to the first module 20Aa and the second module 20Bb. That is, the power conversion module 20 is formed to include the first module 20Aa, the second module 20Bb, the cooler 30, and the housing 40.

[0152] The first module 20Aa has a circuit unit 201 and a first sensor section 130. That is, the first module 20Aa is formed including the circuit unit 201, a first current sensor 121, and a first series sensor 122. The second module 20Bb has a circuit unit 202 and a second sensor section 140. That is, the second module 20Bb is formed including the circuit unit 202, a second current sensor 123, and a second series sensor 124.

[0153] The first module 20Aa and the second module 20Bb share a common structure. For example, the first module 20Aa and the second module 20Bb share a common structure for the circuit unit 201 and the circuit unit 202. However, the positions of the first sensor unit 130 and the second sensor unit 140 in the X direction are different between the first module 20Aa and the second module 20Bb. For example, in the first module 20Aa, the first sensor unit 130 is provided at the O terminals 115a and 115b on the second module 20Bb side in the X direction. On the other hand, in the second module 20Bb, the second sensor unit 140 is provided at the O terminals 116b and 116c on the first module 20Aa side in the X direction.

[0154] Furthermore, the positions of P terminal 111 and P terminal 113 are reversed in the X direction between first module 20Aa and second module 20Bb. For example, in first module 20Aa, P terminal 111 is located closer to O terminal 115c in the X direction. On the other hand, in second module 20Bb, P terminal 113 is located closer to O terminal 116a in the X direction.

[0155] The first module 20Aa and the second module 20Bb have a common structure for the first sensor unit 130 and the second sensor unit 140. For example, the first module 20Aa and the second module 20Bb have in common the fact that the first sensor unit 130 is provided on two O terminals 115 and the second sensor unit 140 is provided on two O terminals 116.

[0156] The control unit 15 can detect abnormalities in the sensor elements 131 and 141 and the series elements 132 and 142 using the detection results of the sensor elements 131 and 141 and the series elements 132 and 142.

[0157] For example, the control unit 15 detects abnormalities in the first sensor element 131 and the first series element 132 of the first module 20Aa. The control unit 15 acquires the detection result of the first sensor element 131 as a first detection value and acquires the detection result of the first series element 132 as a first series value. The control unit 15 calculates the difference between the first detection value and the first series value for each of the O terminals 115a and 115b as a first detection difference. The control unit 15 determines whether the first detection difference for each of the O terminals 115a and 115b is greater than a predetermined first difference threshold. If the first detection difference is greater than the first difference threshold, the control unit 15 determines that a first detection value abnormality has occurred. If a first detection value abnormality has occurred for the O terminal 115a, the control unit 15 determines that a first detection value abnormality has occurred for the U phase. If a first detection value abnormality has occurred for the O terminal 115b, the control unit 15 determines that a first detection value abnormality has occurred for the V phase. When no abnormality occurs in the sensor elements 131 and 132, the first detection difference is approximately zero.

[0158] The control unit 15 calculates a first estimated value for the phase in which the first detected value abnormality occurred. The first estimated value is a value obtained by estimating the first detected value and first series value for the phase in which the first detected value abnormality occurred using the first detected values ​​and first series values ​​for the remaining phases, and the second detected values ​​and second series values ​​described below. The control unit 15 calculates a first detected deviation value, which is the difference between the first estimated value and the first detected value, and a first series deviation value, which is the difference between the first estimated value and the first series value, for the phase in which the first detected value abnormality occurred. The control unit 15 determines that the larger of the first detected deviation value and the first series deviation value is the first abnormal deviation value. The control unit 15 determines that an abnormality has occurred in either the first sensor element 131 or the first series element 132, whichever was used to calculate the first abnormal deviation value. For example, if the first detected deviation value is larger than the first series deviation value, the control unit 15 determines that an abnormality has occurred in the first sensor element 131 in the phase in which the first detected value abnormality occurred.

[0159] The control unit 15 detects abnormalities in the second sensor element 141 and the second series element 142 of the second module 20Bb. The control unit 15 acquires the detection result of the second sensor element 141 as a second detection value and acquires the detection result of the second series element 142 as a second series value. The control unit 15 calculates the difference between the second detection value and the second series value for each of the O terminals 116b and 116c as a second detection difference. The control unit 15 determines whether the second detection difference for each of the O terminals 116b and 116c is greater than a predetermined second difference threshold. If the second detection difference is greater than the second difference threshold, the control unit 15 determines that a second detection value abnormality has occurred. If a second detection value abnormality has occurred for the O terminal 116b, the control unit 15 determines that a second detection value abnormality has occurred for the V phase. If a second detection value abnormality has occurred for the O terminal 116c, the control unit 15 determines that a second detection value abnormality has occurred for the W phase. If no abnormality occurs in the sensor elements 132 and 142, the second detection difference is approximately zero.

[0160] The control unit 15 calculates a second estimated value for the phase in which the second detected value abnormality occurred. The second estimated value is a value obtained by estimating the second detected value and second series value for the phase in which the second detected value abnormality occurred using the second detected value, first series value, first detected value, and first series value for the remaining phases. The control unit 15 calculates a second detected deviation value, which is the difference between the second estimated value and the second detected value, and a second series deviation value, which is the difference between the second estimated value and the second series value, for the phase in which the second detected value abnormality occurred. The control unit 15 determines that the larger of the second detected deviation value and the second series deviation value is the second abnormal deviation value. The control unit 15 determines that an abnormality has occurred in either the second sensor element 141 or the second series element 142, whichever was used to calculate the second abnormal deviation value. For example, if the second detected deviation value is larger than the second series deviation value, the control unit 15 determines that an abnormality has occurred in the second sensor element 141 in the phase in which the second detected value abnormality occurred.

[0161] If no abnormality occurs in the elements 131, 132, 141, and 142, the control unit 15 performs normal drive processing to drive the rotating electric machine 3. In the normal drive processing, the detection results of the elements 131, 132, 141, and 142 for the U phase, V phase, and W phase are used as control parameters for controlling the rotating electric machine 3. For example, in the U phase and V phase, the detection result of the first sensor element 131 is used as the control parameter. In addition, in the W phase, the detection result of the second sensor element 141 is used as the control parameter.

[0162] In the V phase, either the detection result of the first sensor element 131 or the detection result of the second sensor element 141 may be used as the control parameter. In the U and V phases, either the detection result of the first sensor element 131 or the detection result of the first series element 132 may be used as the control parameter. In the V and W phases, either the detection result of the second sensor element 141 or the detection result of the second series element 142 may be used as the control parameter.

[0163] If an abnormality occurs in the elements 131, 132, 141, and 142, the control unit 15 drives the rotating electric machine 3 by performing fail-safe processing. In the fail-safe processing, the detection results of the elements 131, 132, 141, and 142 are used as fail-safe parameters for controlling the rotating electric machine 3. The detection results of the elements 131, 132, 141, and 142 that are not abnormal are used as the fail-safe parameters. For example, if an abnormality occurs in the first sensor element 131 of the U phase, the detection result of the first series element 132 is used as the fail-safe parameter for the U phase. In this case, the detection result of the first sensor element 131 is used as the fail-safe parameter for the V phase, and the detection result of the second sensor element 141 is used as the fail-safe parameter for the W phase.

[0164] 11 and 12 show reference examples of power conversion circuits. Fig. 11 shows an example of a current conduction pattern when star-connected driving is performed in the reference example. Fig. 12 shows a current conduction pattern with timing different from that in Fig. 4 when star-connected driving is performed. In the reference example, the symbols of related elements shown in this embodiment are indicated by adding 'r' to the end of the symbols.

[0165] The control unit performs star connection drive while switching between multiple current conduction patterns. The control unit performs star connection drive using, for example, a PWM control method. PWM is an abbreviation for Pulse Width Modulation. The multiple current conduction patterns include the zero vector current conduction patterns shown in Figures 11 and 12. The current conduction pattern shown in Figure 11 is a zero vector pattern in which all upper arms 8Hr of the inverter 8r are turned on and all lower arms 8Lr are turned off. The current conduction pattern shown in Figure 12 is a zero vector pattern in which all lower arms 8Lr of the inverter 8r are turned on and all upper arms 8Hr are turned off. The power line 5r has a wiring 5A11r connecting the inverter 8 and the selector switch 10r and a wiring 5A12r connecting the selector switch 10r and the inverter 9r.

[0166] As shown in Figures 11 and 12, in the power conversion circuit 4r of the reference example, a snubber circuit 11r connected in parallel to an inverter 9r is connected to a wiring 5A12r of a power line 5r that connects a changeover switch 10r and the inverter 9r. One end of the snubber circuit 11r is connected to the wiring 5A12r of the power line 5r, and the other end is connected to a power line 6r. For convenience, Figures 11 and 12 omit the smoothing capacitor and the snubber circuit connected in parallel to the inverter 8r. Furthermore, the snubber circuit 11r is common to each phase of the inverter 9r.

[0167] In the examples shown in Figures 11 and 12, all three-phase upper arms 9Hr of inverter 9r are turned on to neutralize inverter 9r. In this state, as shown in Figure 11, when all three-phase upper arms 8Hr of inverter 8r are turned on, the voltage across capacitor 11Cr becomes approximately equal to the supply voltage of DC power supply 2r, i.e., power supply voltage Vdc. Furthermore, as shown in Figure 12, when all three-phase lower arms 8Lr of inverter 8r are turned on, the voltage across capacitor 11Cr becomes approximately 0 V (zero volts).

[0168] As described above, star connection driving is performed while switching between multiple current patterns, so the voltage across capacitor 11Cr of snubber circuit 11r fluctuates during star connection driving. The voltage across capacitor 11Cr fluctuates between 0 V and Vdc. As a result, capacitor 11Cr is charged and discharged during star connection driving, resulting in low power conversion efficiency. Resistor 11Rr of snubber circuit 11r consumes the energy stored in capacitor 11Cr and generates heat. This heat affects capacitor 11Cr.

[0169] In contrast to this reference example, in this embodiment, in which the changeover switch 10B is provided on the wiring 6A, the MOSFET of the changeover switch 10B is off, i.e., the changeover switch 10B is in an open state, during star connection driving. Therefore, the potential on the negative side of the capacitor 11C provided in the snubber circuit 11 becomes a floating potential. Therefore, fluctuations in the voltage across the capacitor 11C can be suppressed during star connection driving. In other words, charging and discharging of the capacitor 11C can be suppressed. This improves power conversion efficiency. Furthermore, the effect of heat generated by the resistor 11R due to charging and discharging can be suppressed on the capacitor 11C. This is suitable not only for open connection driving but also for star connection driving.

[0170] <Another drive system> The inverters 8 and 9 can configure drive systems 1A and 1B separate from the drive system 1. The drive systems 1A and 1B shown in FIGS. 13 and 16 are configured to include the inverters 8 and 9. The drive system 1A is sometimes referred to as a first drive system 1A. The drive system 1B is sometimes referred to as a second drive system 1B. The drive systems 1A and 1B include DC power supplies 2A and 2B, rotating electric machines 3A and 3B, power conversion circuits 4A and 4B, output lines 13A and 14B, and control units 150A and 150B.

[0171] DC power supplies 2A, 2B, rotating electric machines 3A, 3B, power conversion circuits 4A, 4B, output lines 13A, 14B, and control units 150A, 150B are devices corresponding to DC power supply 2, rotating electric machine 3, power conversion circuit 4, output lines 13, 14, and control unit 15. In rotating electric machines 3A, 3B, windings 3U, 3V, 3W are connected by star connection or delta connection. Output lines 13A, 14B correspond to output paths.

[0172] The power conversion circuit 4A shown in FIG. 13 is configured to include an inverter 8. In the power conversion circuit 4A, the power supplied from a DC power supply 2A to a rotating electric machine 3A is converted by a single inverter 8. In the drive system 1A, the rotating electric machine 3A is driven by a single inverter 8. In the drive system 1A, an output line 13A connects the inverter 8 to windings 3U, 3V, and 3W of the rotating electric machine 3A. The output line 13A corresponds to an output path. In the drive system 1A, similar to the drive system 1, first sensors 121 and 122 are provided on the output line 13A in the U phase and the V phase.

[0173] Like control unit 15, control unit 150A can detect an abnormality in first sensors 121, 122 using the detection results of first sensors 121, 122. Like control unit 15, control unit 15 calculates the difference between the first detection value and the first series value as a first detection difference for each of the U phase and the V phase. Control unit 15 determines whether the first detection difference for each of the U phase and the V phase is greater than a predetermined first difference threshold. If the first detection difference is greater than the first difference threshold for at least one phase, control unit 150A determines that an abnormality has occurred in at least one of first current sensor 121 and first series sensor 122 for the phase in which the first detection difference is greater than the first difference threshold.

[0174] The power conversion circuit 4B shown in FIG. 18 is configured to include an inverter 9. In the power conversion circuit 4B, the power supplied from a DC power supply 2B to a rotating electric machine 3B is converted by a single inverter 9. In the drive system 1B, the rotating electric machine 3B is driven by a single inverter 9. In the drive system 1B, an output line 14B connects the inverter 9 to windings 3U, 3V, and 3W of the rotating electric machine 3B. The output line 14B corresponds to an output path. In the drive system 1B, similar to the drive system 1, second sensors 123 and 124 are provided on an output line 14BA in the V phase and the W phase.

[0175] Like control unit 15, control unit 150B can detect an abnormality in second sensors 123, 124 using the detection results of second sensors 123, 124. Like control unit 15, control unit 15 calculates the difference between the second detection value and the second series value as a second detection difference for each of the V phase and the W phase. Control unit 15 determines whether the second detection difference for each of the V phase and the W phase is greater than a predetermined second difference threshold. If the second detection difference is greater than the second difference threshold for at least one phase, control unit 150B determines that an abnormality has occurred in at least one of second current sensor 123 and second series sensor 124 for the phase in which the second detection difference is greater than the second difference threshold.

[0176] <Another power conversion module> The power conversion circuit 4A is formed by a power conversion module 20A. The power conversion module 20A shown in FIGS. 14 and 15 provides the main parts of the power conversion circuit 4A. For example, the power conversion module 20A provides an inverter 8, a snubber circuit 11, and first sensors 121 and 122. The power conversion module 20A can drive the rotating electric machine 3A with one inverter 8. The power conversion module 20A is formed using a first module 20Aa. For example, the power conversion module 20A has a circuit unit 201 and a first sensor unit 130, similar to the first module 20Aa. The power conversion module 20A may be referred to as a first power conversion module 20A.

[0177] As shown in FIGS. 16 and 17 , the power conversion module 20A, unlike the first module 20Aa, includes a cooler 30A, a housing 40A, and a sealing body 43A. The cooler 30A, the housing 40A, and the sealing body 43A are components corresponding to the cooler 30, the housing 40, and the sealing body 43. In the power conversion module 20A, the housing 40A accommodates the circuit unit 201. The sealing body 43A seals the substrate 51, the semiconductor elements 61H, 61L, and the like. In the cooler 30A, the positions of the inlet pipe 35 and the outlet pipe 36 may be different from the positions of the inlet pipe 35 and the outlet pipe 36 in the cooler 30. For example, in the cooler 30A, the inlet pipe 35 is provided on the side wall on the wall portion 412 side, and the outlet pipe 36 is provided on the side wall on the wall portion 411 side.

[0178] The power conversion module 20B shown in FIGS. 19 and 20 provides the main parts of the power conversion circuit 4B. For example, the power conversion module 20B provides the inverter 9, the snubber circuit 12, and the second sensors 123 and 124. The power conversion module 20B can drive the rotating electric machine 3B with one inverter 9. The power conversion module 20B is formed using the second module 20Bb. For example, the power conversion module 20B has a circuit unit 202 and a second sensor unit 140, similar to the second module 20Bb. The power conversion module 20B may be referred to as the second power conversion module 20B.

[0179] Unlike the second module 20Bb, the power conversion module 20B has an N terminal 114. The N terminal 114 is connected to the N wiring 525 via the N bus bar 104. The N terminal 114 forms at least a part of the power supply line 6 of the drive system 1A. The P terminal 113 forms at least a part of the power supply line 5 of the drive system 1A.

[0180] As shown in FIGS. 21 and 22 , the power conversion module 20B, unlike the second module 20Bb, includes a cooler 30B, a housing 40B, and a sealing body 43B. The cooler 30B, the housing 40B, and the sealing body 43B are components corresponding to the cooler 30, the housing 40, and the sealing body 43. In the power conversion module 20B, the housing 40B accommodates the circuit unit 202. The sealing body 43B seals the substrate 52, the semiconductor elements 62H, 62L, and the like. In the cooler 30B, the positions of the inlet pipe 35 and the outlet pipe 36 may be different from the positions of the inlet pipe 35 and the outlet pipe 36 in the cooler 30. For example, in the cooler 30B, the inlet pipe 35 is provided on the side wall on the wall portion 412 side, and the outlet pipe 36 is provided on the side wall on the wall portion 411 side.

[0181] The power conversion module 20A and the power conversion module 20B have a common structure. For example, the cooler 30A, the housing 40A, and the sealing body 43A, and the cooler 30B, the housing 40B, and the sealing body 43B, have a common structure between the power conversion module 20A and the power conversion module 20B. For example, the housing 40A and the housing 40B both have a frame body 41. The cooler 30A and the cooler 30B both have one surface 301, which forms a flow path 33. The sealing body 43A and the sealing body 43B both seal electronic components, etc.

[0182] As shown in FIGS. 19 and 24, in the power conversion modules 20A and 20B, a plurality of O terminals 115 and 116 are arranged in the X direction. The O terminals 115 and 116 form at least a part of the output lines 13A and 14B. The O terminals 115 and 116 correspond to output conductor portions. The O terminal 115 is an output terminal for electrically connecting the semiconductor elements 61H and 61L to the rotating electric machine 3A. The O terminal 116 is an output terminal for electrically connecting the semiconductor elements 62H and 62L to the rotating electric machine 3B.

[0183] Of the multiple O terminals 115, O terminals 115a, 115b, 116b, and 116c are provided with sensor units 130 and 140. O terminals 115a, 115b, 116b, and 116c correspond to target conductor units. In the sensor units 130 and 140, sensor elements 131, 132, 141, and 142 are provided in O terminals 115a, 115b, 116b, and 116c. The first sensor element 131 and the second sensor element 141 correspond to a target detection unit. The first series element 132 and the second series element 142 correspond to a common detection unit.

[0184] In the O terminals 115a, 115b, 116b, and 116c, the sensor elements 131, 141 and the series elements 132, 142 are arranged in the direction of current flow in the O terminals 115a, 115b, 116b, and 116c. The sensor units 130, 140 are provided in the O terminals 115, 116 outside the housings 40A, 40B.

[0185] In the power conversion module 20A, the semiconductor elements 61H, 61L and the O terminal 115 are arranged on a common surface 301 of the cooler 30A. The semiconductor elements 61H, 61L and the O terminal 115 are arranged along the flow path 33 via the surface 301 of the cooler 30A. In the power conversion module 20B, the semiconductor elements 62H, 62L and the O terminal 116 are arranged on a common surface 301 of the cooler 30B. The semiconductor elements 62H, 62L and the O terminal 116 are arranged along the flow path 33 via the surface 301 of the cooler 30B.

[0186] The control unit 150A of the drive system 1A, like the control unit 15 of the drive system 1, can detect that an abnormality has occurred in at least one of the first sensor element 131 and the first series element 132 using the detection results of the first sensor element 131 and the first series element 132.

[0187] If no abnormality occurs in the first elements 131 and 132, the control unit 15 drives the rotating electric machine 3A by performing a normal drive process. In the normal drive process, the detection results of the first elements 131 and 132 for the U phase and the V phase are used as control parameters for controlling the rotating electric machine 3A. For example, the detection results of the first sensor element 131 are used as control parameters for the U phase and the V phase. The control unit 15A calculates a first estimated value that estimates the current value of the W phase using the first detected value of the U phase and the first detected value of the V phase. Then, the control unit 15A performs the normal drive process using the first detected value of the U phase, the first detected value of the V phase, and the first estimated value of the W phase as control parameters.

[0188] Note that for the U-phase and V-phase, the detection results of the first series element 132 may be used as control parameters. Also, the control unit 15A may calculate the first estimated value for the W-phase using the first series value for the U-phase and the first series value for the V-phase.

[0189] When an abnormality occurs in the first elements 131, 132, the control unit 15A drives the rotating electric machine 3A by performing fail-safe processing. In the fail-safe processing, the detection results of the first elements 131, 132 are used as fail-safe parameters for controlling the rotating electric machine 3A. The detection results of the first elements 131, 132 in which no abnormality has occurred are used as the fail-safe parameters. For example, when an abnormality occurs in the first sensor element 131 of the U phase, the detection result of the first series element 132 is used as the fail-safe parameter for the U phase instead of the detection result of the first sensor element 131.

[0190] The control unit 150B of the drive system 1B, like the control unit 15 of the drive system 1, can detect that an abnormality has occurred in at least one of the second sensor element 141 and the second series element 142 using the detection results of the second sensor element 141 and the second series element 142.

[0191] If no abnormality occurs in the second elements 141 and 142, the control unit 15 drives the rotating electric machine 3B by performing a normal drive process. In the normal drive process, the detection results of the second elements 141 and 142 for the V phase and the W phase are used as control parameters for controlling the rotating electric machine 3B. For example, the detection results of the second sensor element 141 are used as control parameters for the V phase and the W phase. The control unit 15B calculates a second estimated value that estimates the current value of the U phase using the second detected value of the V phase and the second detected value of the W phase. Then, the control unit 15B performs the normal drive process using the second detected value of the V phase, the second detected value of the W phase, and the second estimated value of the U phase as control parameters.

[0192] Note that for the V-phase and W-phase, the detection result of the second series element 142 may be used as a control parameter. Also, the control unit 15B may calculate the second estimated value for the U-phase using the second series value for the V-phase and the second series value for the W-phase.

[0193] If an abnormality occurs in the second elements 141 and 142, the control unit 15B drives the rotating electric machine 3B by performing fail-safe processing. In the fail-safe processing, the detection results of the second elements 141 and 142 are used as fail-safe parameters for controlling the rotating electric machine 3B. The detection results of the element of the second elements 141 and 142 in which no abnormality has occurred are used as the fail-safe parameters. For example, if an abnormality occurs in the second sensor element 141 of the V-phase, the detection result of the second series element 142 is used as the fail-safe parameter for the V-phase instead of the detection result of the second sensor element 141.

[0194] <Summary of the First Embodiment> According to this embodiment, in the power conversion module 20A, both the first sensor element 131 and the first series element 132 detect the current flowing through the O terminals 115a and 115b. With this configuration, an abnormality in one of the first sensor element 131 and the first series element 132 can be detected by using the detection result of the other. Furthermore, with this configuration, because both the first sensor element 131 and the first series element 132 are provided at the O terminals 115a and 115b, respectively, a difference is unlikely to occur between the detection results of the first sensor element 131 and the first series element 132. Therefore, the driving mode of the rotating electric machine 3A is unlikely to differ between when one of the detection results of the first sensor element 131 and the first series element 132 is used to control the rotating electric machine 3A and when the other is used to control the rotating electric machine 3A. This makes it possible to both detect an abnormality in the first sensor element 131 and the first series element 132 and improve the reliability of the driving of the rotating electric machine 3A.

[0195] The power conversion module 20B can also achieve the same effects as the power conversion module 20A. For example, in the power conversion module 20B, both the second sensor element 141 and the second series element 142 detect the current flowing through the O terminals 116b and 116c. With this configuration, an abnormality in one of the second sensor element 141 and the second series element 142 can be detected by using the detection result of the other. Furthermore, with this configuration, because both the second sensor element 141 and the second series element 142 are provided at the O terminals 116b and 116c, respectively, a difference is unlikely to occur between the detection results of the second sensor element 141 and the second series element 142. Therefore, a difference in the driving mode of the rotating electric machine 3B is unlikely to occur when one of the detection results of the second sensor element 141 and the second series element 142 is used to control the rotating electric machine 3B and when the other detection result is used to control the rotating electric machine 3B. Therefore, it is possible to detect abnormalities in second sensor element 141 and second series element 142, and to improve the reliability of driving rotary electric machine 3B.

[0196] The power conversion module 20A has first elements 131 and 132, and the power conversion module 20B has second elements 141 and 142. Therefore, the power conversion module 20A can be formed using a first module 20Aa having the first elements 131 and 132, and the power conversion module 20B can be formed using a second module 20Bb having the second elements 141 and 142. It is also possible to form the power conversion module 20 using two module components, the first module 20Aa and the second module 20Bb. Therefore, by using the first module 20Aa and the second module 20Bb, three types of power conversion modules, namely the power conversion modules 20, 20A, and 20B, can be formed. In this way, the versatility of the first module 20Aa and the second module 20Bb can be improved.

[0197] According to the present embodiment, in the power conversion module 20A, the first sensor element 131 and the first series element 132 are provided at the O terminal 115a and the O terminal 115b, respectively. Therefore, an abnormality in the first sensor element 131 or the first series element 132 can be detected at the O terminal 115a and the O terminal 115b, respectively. Similarly, in the power conversion module 20B, an abnormality in the second sensor element 141 or the second series element 142 can be detected at the O terminal 116b and the O terminal 116c, respectively.

[0198] According to the present embodiment, in the power conversion module 20A, the first sensor element 131 and the first series element 132 are arranged in the direction of current flow in the O terminals 115 and 115b. With this configuration, the first sensor element 131 and the first series element 132 can each accurately detect the current flowing in the O terminals 115a and 115b. Similarly, in the power conversion module 20B, the second sensor element 141 and the second series element 142 can each accurately detect the current flowing in the O terminals 116b and 116c.

[0199] According to this embodiment, in the power conversion module 20A, the first elements 131 and 132 are provided on the O terminals 115a and 115b outside the housing 40A. With this configuration, the housing 40A and the power conversion module 20A can be made smaller by the amount that the housing 40A does not accommodate the first elements 131 and 132. Similarly, in the power conversion module 20B, the housing 40B and the power conversion module 20B can be made smaller by the amount that the housing 40B does not accommodate the second elements 141 and 142.

[0200] According to the present embodiment, in the power conversion module 20A, the semiconductor elements 61H, 61L and the O terminal 115 are arranged on one surface 301 of the cooler 30A. This configuration makes it easy to package the semiconductor elements 61H, 61L and the O terminal 115 on one surface 301 of the cooler 30A. This makes it possible to reduce the size of the power conversion module 20A while facilitating protection of the semiconductor elements 61H, 61L and the O terminal 115. Similarly, in the power conversion module 20B, it is possible to reduce the size of the power conversion module 20A while facilitating protection of the semiconductor elements 62H, 62L and the O terminal 116.

[0201] According to the present embodiment, in the power conversion module 20A, the semiconductor elements 61H and 61L and the O-terminal 115 are arranged along the flow path 33 of the cooler 30A. With this configuration, the cooling effect of the refrigerant 37 flowing through the flow path 33 can be imparted to the semiconductor elements 61H and 61L, the O-terminal 115, and the first elements 131 and 132. This prevents the detection accuracy of the first elements 131 and 132 from being reduced due to heat from the semiconductor elements 61H and 61L, the O-terminal 115, and the first elements 131 and 132. Similarly, in the power conversion module 20B, it is possible to prevent the detection accuracy of the second elements 141 and 142 from being reduced due to heat from the semiconductor elements 62H and 62L, the O-terminal 116, and the second elements 141 and 142.

[0202] According to the present embodiment, in the power conversion module 20, in the circuit unit 201, both the first sensor element 131 and the first series element 132 detect the current flowing between the O-terminals 115a and 115b. With this configuration, similar to the power conversion module 20A, it is possible to both detect abnormalities in the first sensor element 131 and the first series element 132 and improve the reliability of driving the rotating electric machine 3. Furthermore, in the circuit unit 202, both the second sensor element 141 and the second series element 142 detect the current flowing between the O-terminals 116a and 116b. With this configuration, similar to the power conversion module 20B, it is possible to both detect abnormalities in the second sensor element 141 and the second series element 142 and improve the reliability of driving the rotating electric machine 3.

[0203] According to this embodiment, the power conversion module 20 includes a first module 20Aa and a second module 20Bb. With this configuration, it is possible to manufacture both the power conversion module 20 and the power conversion modules 20A and 20B using the first module 20Aa and the second module 20Bb. Therefore, it is not necessary to use dedicated module parts to manufacture the power conversion module 20.

[0204] According to this embodiment, the first module 20Aa and the second module 20Bb have a common structure. For example, the circuit unit 201 and the circuit unit 202 of the first module 20Aa and the second module 20Bb have a common structure, and the first sensor unit 130 and the second sensor unit 140 have a common structure. This simplifies the structure of the power conversion module 20. Furthermore, two module components having a common structure can be used as the first module 20Aa and the second module 20Bb. This increases the versatility of the module components for forming the first module 20Aa and the second module 20Bb.

[0205] According to this embodiment, first sensor units 130 are provided for two of the three phases, and second sensor units 140 are provided for two of the three phases, including the same phase as the first sensor unit 130. In this configuration, by using the detection results of at least one of the first sensor unit 130 and the second sensor unit 140, it is possible to detect the currents flowing through the U-phase winding 3U, the V-phase winding 3V, and the W-phase winding 3W.

[0206] (Second embodiment) This embodiment is a modification based on the previous embodiment, and the description of the previous embodiment can be used. In the previous embodiment, the power conversion module 20 has the cooler 30 and the housing 40, while the power conversion modules 20A, 20B have the coolers 30A, 30B and the housings 40A, 40B, but this is not limited to this. In this embodiment, the power conversion module 20 may have the coolers 30A, 30B and the housings 40A, 40B, similar to the power conversion modules 20A, 20B.

[0207] <Power conversion circuit> Fig. 23 shows a power conversion circuit 4 according to this embodiment. The power conversion circuit 4 shown in Fig. 23 does not need to have the changeover switch 10. For example, in the power conversion circuit 4, the changeover switch 10A is not provided on the power supply line 5, and the changeover switch 10B is not provided on the power supply line 6.

[0208] 24, the power conversion module 20 does not have to have a portion that provides the changeover switch 10. For example, the power conversion module 20 does not have a substrate 53, a changeover switch 80, a clip 90, or the like. In the power conversion module 20, the first module 20Aa and the second module 20Bb are provided adjacent to each other without any portion that provides the changeover switch 10 therebetween. Unlike the first embodiment, the second module 20Bb has an N terminal 114, similar to the power conversion module 20B.

[0209] The power conversion module 20 has coolers 30A, 30B, housings 40A, 40B, and sealing bodies 43A, 43B instead of the cooler 30, housing 40, and sealing body 43. As shown in Fig. 25, the first module 20Aa differs from the first embodiment in that it has a cooler 30A, housing 40A, and sealing body 43A. As shown in Figs. 25 and 26, the second module 20Bb differs from the first embodiment in that it has a cooler 30B, housing 40B, and sealing body 43B.

[0210] In this embodiment, the first module 20Aa and the second module 20Bb are fixed to each other to form the power conversion module 20. Therefore, when manufacturing the power conversion module 20, work such as attaching the cooler 30, the housing 40, and the sealing body 43 to the first module 20Aa and the second module 20Bb is not required.

[0211] The first module 20Aa has a common structure with the power conversion module 20A. Therefore, when manufacturing the power conversion module 20A, work such as attaching a cooler 30a, a housing 40a, or a sealing body 43a to the first module 20Aa is not required. In this way, the versatility of the first module 20Aa is enhanced. Furthermore, the second module 20Bb has a common structure with the power conversion module 20B. Therefore, when manufacturing the power conversion module 20B, work such as attaching a cooler 30b, a housing 40b, or a sealing body 43b to the second module 20Bb is not required. In this way, the versatility of the second module 20Bb is enhanced.

[0212] (Third embodiment) This embodiment is a modification based on the previous embodiment, and the description of the previous embodiment can be used. In the previous embodiment, the first module 20Aa and the second module 20Bb do not have the same structure, but this is not limited to this. In this embodiment, the first module 20Aa and the second module 20Bb have the same structure.

[0213] 27, the first sensor unit 130 and the second sensor unit 140 are located in the same position in the first module 20Aa and the second module 20Bb. For example, in the first module 20Aa, the first sensor unit 130 is provided at the O terminals 115b and 115c on the wall 413 side of the housing 40A in the X direction. In the second module 20Bb, the second sensor unit 140 is provided at the O terminals 116 and 116c on the wall 413 side of the housing 40B in the X direction.

[0214] Furthermore, in the first module 20Aa and the second module 20Bb, the positions of the P terminal 111 and the N terminal 112 and the positions of the P terminal 113 and the N terminal 114 are the same. For example, in the first module 20Aa, the P terminal 111 is arranged on the wall 413 side in the X direction, and the N terminal 112 is arranged on the wall 414 side. In the second module 20Bb, the P terminal 113 is arranged on the wall 413 side in the X direction, and the N terminal 114 is arranged on the wall 414 side.

[0215] In this way, because the first module 20Aa and the second module 20Bb have the same structure, two module components having the same structure can be used as the first module 20Aa and the second module 20Bb. Moreover, in the first module 20Aa and the second module 20Bb, the P terminal 111, the N terminal 112, and the first sensor unit 130, and the P terminal 113, the N terminal 114, and the second sensor unit 140 have the same positional relationships. Therefore, the two module components can be used as the first module 20Aa and the second module 20Bb without changing the positions of the P terminals 111, 113, the N terminals 112, 114, and the sensor units 130, 140.

[0216] In the power conversion module 20, the arrangement order of the U-phase, V-phase, and W-phase in the X direction differs between the first module 20Aa and the second module 20Bb. For example, in the second module 20Bb, the U-phase, V-phase, and W-phase are arranged in this order from the wall 414 side in the X direction. In the O terminal 116, the O terminal 116a is the U-phase, the O terminal 116b is the V-phase, and the O terminal 116c is the W-phase. On the other hand, in the first module 20Aa, the W-phase, U-phase, and V-phase are arranged in this order from the wall 414 side in the X direction. In the O terminal 115, the O terminal 115a is the W-phase, the O terminal 115b is the U-phase, and the O terminal 115c is the V-phase.

[0217] In this embodiment, the first module 20Aa has the same structure as the power conversion module 20A. Therefore, when manufacturing the power conversion module 20A, the module components that can be used to manufacture the first module 20Aa can be used as the power conversion module 20A without modification. Furthermore, the second module 20Bb has the same structure as the power conversion module 20B. Therefore, when manufacturing the power conversion module 20B, the module components that can be used to manufacture the second module 20Bb can be used as the power conversion module 20B without modification.

[0218] (Other embodiments) The disclosure in this specification and drawings, etc. is not limited to the exemplified embodiments. The disclosure encompasses the exemplified embodiments and modifications thereto by those skilled in the art. For example, the disclosure is not limited to the combinations of parts and / or elements shown in the embodiments. The disclosure can be implemented in various combinations. The disclosure can have additional parts that can be added to the embodiments. The disclosure encompasses the omission of parts and / or elements from the embodiments. The disclosure encompasses the substitution or combination of parts and / or elements between one embodiment and another embodiment. The disclosed technical scope is not limited to the description of the embodiments. Some disclosed technical scopes are defined by the claims, and should be interpreted as including all modifications within the meaning and scope equivalent to the claims.

[0219] The disclosure in the specification, drawings, etc. is not limited by the claims. The disclosure in the specification, drawings, etc. encompasses the technical ideas described in the claims, and extends to more diverse and broader technical ideas than the technical ideas described in the claims. Therefore, various technical ideas can be extracted from the disclosure in the specification, drawings, etc. without being bound by the claims.

[0220] When an element or layer is referred to as being "on," "coupled," "connected," or "bonded," it may be directly on, coupled, connected, or bonded to the other element or layer, and intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly coupled," "directly connected," or "directly bonded" to another element or layer, no intervening elements or layers are present. Other language used to describe relationships between elements should be construed in a similar manner (e.g., "between" vs. "directly between," "adjacent" vs. "directly adjacent," etc.).

[0221] As used in this specification, the term "and / or" includes any and all combinations of one or more of the associated listed items, i.e., reference to A and / or B means at least one of A and B, and may include A only, B only, or both A and B.

[0222] Spatially relative terms such as "inside," "outside," "back," "below," "low," "top," "top," and the like are used herein to facilitate the description of one element or feature's relationship to other elements or features, as illustrated. Spatially relative terms may be intended to encompass different orientations of the device during use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures were turned over, elements described as "below" or "directly below" other elements or features would then be oriented "above" the other elements or features. Thus, the term "bottom" can encompass both an orientation of top and bottom. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used in this specification would be interpreted accordingly.

[0223] In each of the above embodiments, in the power conversion modules 20, 20A, 20B, the sensor units 130, 140 may be accommodated in the housing 40. For example, the sensor units 130, 140 may be provided on the substrates 51, 52, etc. In the sensor units 130, 140, the sensor elements 131, 141 and the series elements 132, 142 may be provided on the O wiring 516, 526.

[0224] In each of the above embodiments, the first sensors 121, 122 and the second sensors 123, 124 may be provided in the same phase. For example, the first sensors 121, 122 and the second sensors 123, 124 may be provided in the U phase and the V phase, respectively. That is, the first elements 131, 132 and the second elements 141, 142 may be provided in the same phase. For example, the first elements 131, 132 and the second elements 141, 142 may be provided in the U phase and the V phase, respectively.

[0225] Furthermore, the first sensors 121, 122 and the second sensors 123, 124 may be provided for each of the three phases. That is, the first elements 131, 132 and the second elements 141, 142 may be provided for each of the three phases.

[0226] In each of the above embodiments, the sensor elements 131, 141 and the series elements 132, 142 may be disposed in any manner relative to the O terminals 115, 116 as long as they are capable of detecting the current flowing through the O terminals 115, 116. For example, the sensor elements 131, 141 and the series elements 132, 142 may be arranged in a direction that intersects with the direction in which the current flows through the O terminals 115, 116.

[0227] In each of the above embodiments, the drive system 1 may have a 3×n rotating electric machine 3. This drive system 1 has a 3×n power conversion circuit 4 to drive the 3×n rotating electric machine 3, where n is a natural number. For example, in the drive system 1, the 3×n power conversion circuit 4 is realized by connecting n three-phase inverters 8, 9 in parallel to the n×3-phase rotating electric machine 3.

[0228] (Disclosure of technical ideas) This specification discloses multiple technical ideas described in the following multiple clauses. Some clauses may be written in a multiple dependent form, with the subsequent clause referring to the preceding clause as an alternative. Furthermore, some clauses may be written in a multiple dependent form, referring to another multiple dependent clause. These multiple dependent clauses define multiple technical ideas.

[0229] (Technical thought 1) A power conversion module (20A, 20B) that converts power supplied to a rotating electric machine (3A, 3B), semiconductor elements (61H, 61L, 62H, 62L) constituting an inverter (8, 9) connected to windings of the rotating electric machine via output paths (13A, 14B); a plurality of output conductor portions (115, 116) arranged in a predetermined direction (X) and forming at least a part of the output path; a current detection unit for detecting a current flowing through a target conductor portion (115a, 115b, 116b, 116c) among the plurality of output conductor portions, the current detection unit being a target detection unit (131, 141) provided on the target conductor portion; a current detection unit for detecting a current flowing through the target conductor portion, the common detection unit (132, 142) being provided on the target conductor portion together with the current detection unit; A power conversion module comprising:

[0230] (Technical thought 2) The power conversion module according to Technical Idea 1, wherein the target detector and the common detector are provided in each of the plurality of target detectors.

[0231] (Technical Thought 3) The power conversion module according to Technical Idea 1 or 2, wherein the target detector and the common detector are arranged in the direction of current flow in the target detector.

[0232] (Technical Thought 4) a housing (40A, 40B) that accommodates the semiconductor element; the target conductor portion has output terminals (115, 116) for connecting the semiconductor element to the rotating electric machine so that electricity can be passed through the semiconductor element; The power conversion module according to any one of Technical Concepts 1 to 3, wherein the target detector and the common detector are each provided on the target conductor portion outside the housing.

[0233] (Technical Thought 5) a support member (30A, 30B) having one surface (301); The power conversion module according to any one of Technical Concepts 1 to 4, wherein the semiconductor element and the output conductor portion are arranged on the common surface.

[0234] (Technical Thought 6) The support member is a cooler having a flow path (33) therein, The power conversion module according to Technical Idea 5, wherein the semiconductor element and the output conductor portion are arranged along the flow path via the one surface.

[0235] (Technical Thought 7) A power conversion module (20) that converts power supplied to a rotating electric machine (3), first semiconductor elements (61H, 61L) constituting a first inverter (8) connected to a winding of the rotating electric machine via a first output path (13); second semiconductor elements (62H, 62L) constituting a second inverter (9) connected to a winding of the rotating electric machine via a second output path (14); a plurality of first output conductor portions (115) arranged in a predetermined direction (X) and forming at least a part of the first output path; a plurality of second output conductor portions (116) arranged in a predetermined direction (X) and forming at least a part of the second output path; a first target detection unit (131) provided on a first target conductor portion, which is a current detection unit that detects a current flowing through a first target conductor portion (115a, 115b) among the plurality of first output conductor portions; a first common detection unit (132) that is a current detection unit that detects a current flowing through the first target conductor portion and is provided on the first target conductor portion together with the first target detection unit; a second target detection unit (141) provided on a second target conductor portion, which is a current detection unit that detects a current flowing through a second target conductor portion (116b, 116c) among the plurality of second output conductor portions; a second common detection unit (142) that is a current detection unit that detects a current flowing in the second output conductor portion and is provided on the second target conductor portion together with the second target detection unit; A power conversion module comprising:

[0236] (Technical Thought 8) a first module (20Aa) having the first semiconductor element, the first output conductor portion, the first target detection portion, and the first common detection portion; a second module (20Bb) having the second semiconductor element, the second output conductor portion, the second target detection portion, and the second common detection portion; The power conversion module according to Technical Idea 7, comprising:

[0237] (Technical Thought 9) The power conversion module according to Technical Concept 8, wherein the first module and the second module have a common structure.

[0238] (Technical Thought 10) the first target detector and the first common detector are configured to detect currents flowing through the first output conductors of two of the three phases, A power conversion module described in any one of Technical Ideas 7 to 9, wherein the second target detection unit and the second common detection unit are configured to detect current flowing in each of the second output conductor units of two phases out of three phases, including one phase detected by the first target detection unit and the first common detection unit. [Explanation of symbols]

[0239] 1, 1A, 1B... drive system, 3, 3A, 3B... rotating electric machine, 3U, 3V, 3W... winding, 8, 9... inverter, 13, 13A, 13B... output line, 14, 14A, 14B... output line, 20, 20A, 20B... power conversion module, 20Aa... first module, 20Bb... second module, 30, 30A, 30B... cooler, 301... one surface, 33... flow path, 40, 40A, 40B... housing, 61H, 61L, 62H, 62L... semiconductor element, 115, 115a, 115b... O terminal, 116, 116b, 116c... O terminal, 131... first sensor element, 132... first series element 141... second sensor element, 142... second series element.

Claims

1. A power conversion module (20A, 20B) that converts power supplied to a rotating electric machine (3A, 3B), semiconductor elements (61H, 61L, 62H, 62L) constituting an inverter (8, 9) connected to windings of the rotating electric machine via output paths (13A, 14B); a plurality of output conductor portions (115, 116) arranged in a predetermined direction (X) and forming at least a part of the output path; a current detection unit for detecting a current flowing through a target conductor portion (115a, 115b, 116b, 116c) among the plurality of output conductor portions, the current detection unit being a target detection unit (131, 141) provided on the target conductor portion; a current detection unit for detecting a current flowing through the target conductor portion, the current detection unit being a common detection unit (132, 142) provided on the target conductor portion together with the current detection unit; A power conversion module comprising:

2. The power conversion module according to claim 1 , wherein the target detector and the common detector are provided in each of the plurality of target detectors.

3. The power conversion module according to claim 1 , wherein the target detector and the common detector are arranged in a direction in which a current flows in the target detector.

4. a housing (40A, 40B) that accommodates the semiconductor element; the target conductor portion has output terminals (115, 116) for electrically connecting the semiconductor element to the rotating electric machine, The power conversion module according to claim 1 , wherein the target detector and the common detector are each provided on the target conductor portion outside the housing.

5. A support member (30A, 30B) having one surface (301), The power conversion module according to claim 1 or 2, wherein the semiconductor element and the output conductor portion are arranged on the common surface.

6. The support member is a cooler having a flow path (33) therein, The power conversion module according to claim 5 , wherein the semiconductor element and the output conductor portion are arranged along a flow path via the one surface.

7. A power conversion module (20) that converts power supplied to a rotating electric machine (3), a first semiconductor element (61H, 61L) constituting a first inverter (8) connected to a winding of the rotating electric machine via a first output path (13); second semiconductor elements (62H, 62L) constituting a second inverter (9) connected to a winding of the rotating electric machine via a second output path (14); a plurality of first output conductor portions (115) arranged in a predetermined direction (X) and forming at least a part of the first output path; a plurality of second output conductor portions (116) arranged in a predetermined direction (X) and forming at least a part of the second output path; a first target detection unit (131) provided on a first target conductor portion, which is a current detection unit that detects a current flowing through a first target conductor portion (115a, 115b) among the plurality of first output conductor portions; a first common detection unit (132) that is a current detection unit that detects a current flowing through the first target conductor portion and is provided on the first target conductor portion together with the first target detection unit; a second target detection unit (141) provided on the second target conductor portion, which is a current detection unit that detects a current flowing through a second target conductor portion (116b, 116c) among the plurality of second output conductor portions; a second common detection unit (142) that is a current detection unit that detects a current flowing in the second output conductor portion and is provided on the second target conductor portion together with the second target detection unit; A power conversion module comprising:

8. a first module (20Aa) having the first semiconductor element, the first output conductor portion, the first target detection portion, and the first common detection portion; a second module (20Bb) having the second semiconductor element, the second output conductor portion, the second target detection portion, and the second common detection portion; The power conversion module of claim 7 , comprising:

9. The power conversion module according to claim 8 , wherein the first module and the second module have a common structure.

10. the first target detector and the first common detector are provided to detect currents flowing through the first output conductors of two of the three phases, The power conversion module according to any one of claims 7 to 9, wherein the second target detection unit and the second common detection unit are configured to detect currents flowing through the second output conductors of two phases out of three phases, including one phase detected by the first target detection unit and the first common detection unit.

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