Ion beam irradiation apparatus

Abstract

To provide an ion beam irradiation device dispensing with replacement of an ion source for changing ions.SOLUTION: An ion beam irradiation device (1) includes an ion supply part (12) capable of switching and supplying ions, an ion trap part (20) for cooling and trapping the ions supplied from the ion supply part, and an acceleration / convergence part (30) for accelerating and converging the ions trapped in the ion trap part. Accordingly, the ion beam irradiation apparatus can perform irradiation by switching ions without replacing the ion source.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to an ion beam irradiation device. [Background technology]

[0002] There is a known technique for fabricating quantum devices by irradiating a target material with ions. For example, implanting nitrogen ions into diamond creates NV (nitrogen-vacancy) centers in the diamond, which can be used as quantum memory or quantum sensors. However, to integrate such quantum devices with high precision, precise and deep implantation of ions into the target material is required.

[0003] Non-Patent Document 1 discloses a technology that enables precise ion irradiation by accelerating and irradiating ions trapped in an ion trap section. In this way, the diameter of the ion beam can be narrowed, making it easier to precisely irradiate ions onto a target material. [Prior art documents] [Non-patent literature]

[0004] [Non-Patent Document 1] New J. Phys. 23 (2021) 063067 (https: / / doi.org / 10.1088 / 1367-2630 / ac0753 Summary of the Invention [Problem to be solved by the invention]

[0005] However, the above-mentioned conventional techniques still do not have sufficient functionality for fabricating quantum devices. For example, changing the ion source is necessary to change the ion source, making it difficult to appropriately change the ion source.

[0006] An object of one aspect of the present invention is to provide an ion beam irradiation apparatus that does not require replacement of an ion source for changing ions. [Means for solving the problem]

[0007] In order to solve the above problems, an ion beam irradiation device according to one aspect of the present invention includes an ion supply unit that can switch between ions to be supplied, an ion trap unit that cools and traps the ions supplied from the ion supply unit, and an acceleration / convergence unit that accelerates and converges the ions trapped in the ion trap unit. [Effects of the Invention]

[0008] According to one aspect of the present invention, it is possible to realize an ion beam irradiation apparatus that does not require replacement of an ion source for changing ions. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a perspective view illustrating an example of an ion beam irradiation apparatus according to an embodiment of the present invention. [Figure 2] FIG. 2 is a diagram illustrating an example of an ion supply unit according to an embodiment of the present invention. [Figure 3] FIG. 1 illustrates an example of sputtering of a target material. [Figure 4] FIG. 10 is a diagram illustrating an example of a Wien filter. [Figure 5] 1 is a graph showing an example of ions generated by sputtering. [Figure 6] FIG. 2 is a diagram illustrating an example of an ion trap unit. [Figure 7] 1 is a graph showing an example of ions trapped in an ion trap section. [Figure 8] 1 is a graph showing an example of ions ejected from a Coulomb crystal state. [Figure 9] FIG. 2 is a cross-sectional view showing an example of an acceleration / convergence section. [Figure 10] FIG. 4 is a diagram showing an example of a voltage applied to an acceleration / convergence unit. [Figure 11] 1 is a graph showing an example of ions being focused and accelerated by an acceleration / focusing section. [Figure 12] 10 is a graph showing an example of the dependency of the working distance on the inter-electrode voltage. DETAILED DESCRIPTION OF THE INVENTION

[0010] An ion beam irradiation apparatus according to one embodiment of the present invention will be described in detail below. FIG. 1 is a perspective view showing an example of an ion beam irradiation apparatus 1 according to an embodiment of the present invention. For ease of understanding, FIG. 1 shows the ion beam irradiation apparatus 1 in an open state. In reality, the inside of the ion beam irradiation apparatus 1 is isolated from the atmosphere and evacuated by a vacuum pump (for example, a turbomolecular pump). This is also the case with FIG. 2.

[0011] As shown in Fig. 1, an ion beam irradiation device 1 irradiates a target material TA (e.g., diamond) with an ion beam IB3. As a result, ions are implanted into the target material TA, forming, for example, various color centers (e.g., NV centers). The ion beam irradiation device 1 can switch between various ions (e.g., N, C, Si), accelerate them at high speed (e.g., several tens to 100 keV), and implant them into the target material TA at a narrow beam diameter BS (e.g., 10 to 100 nm) and a long working distance WD (e.g., several tens to 140 mm).

[0012] The ion beam irradiation device 1 includes an ion supply unit 10 , an ion trap unit 20 , and an acceleration / focus unit 30 .

[0013] The ion supply unit 10 can switch between ions and supply them to the ion trap unit 20. These ions may be any atomic ions or molecular ions. That is, these ions may be monovalent ions, multivalent ions, or ions of molecules with large molecular weights. Note that by using multivalent ions, it is possible to accelerate the ions to higher energies depending on their valence.

[0014] The ion supply unit 10 may supply any of the following ions (1) to (5). (1) Ions generated by sputtering of the target material TA0 (2) Ions generated by laser ablation of the target material TA0 (3) Ions emitted from the plasma (4) Ions generated by electron cyclotron resonance (ECR) (5) Ions generated by electrospray

[0015] In the case of (1), the target material TA0 is irradiated with first ions to cause sputtering. As a result, a beam of second ions generated from the target material TA0 by sputtering is supplied from the ion supply unit 10. In other words, by changing the target material TA0, the type of ions irradiated from the ion beam irradiation device 1 can be easily changed.

[0016] In the case of (2), a powerful laser is irradiated onto the target material TA0 to cause laser ablation. As a result, a beam of ions generated from the target material TA0 by laser ablation is supplied from the ion supply unit 10. In this case, as in the case of (1), the type of ions irradiated from the ion beam irradiation device 1 can be easily changed by changing the target material TA0.

[0017] In the case of (3), for example, desired atoms are converted into plasma by discharge. A beam of ions extracted from this plasma is supplied from the ion supply unit 10. By switching the atoms to be converted into plasma (for example, gas species), the type of ions irradiated from the ion beam irradiation device 1 can be easily changed.

[0018] In the case of (4), ions of a desired atom are generated using electron cyclotron resonance (ECR), and a beam of these ions is supplied from the ion supply unit 10. By switching the atom to be ionized (for example, gas species), the type of ions irradiated from the ion beam irradiation device 1 can be easily changed.

[0019] In the case of (5), the liquid material is charged to form droplets, and ions are generated from these charged droplets. By switching the liquid material, the type of ions supplied from the ion supply unit 10 can be easily changed.

[0020] These (1) to (5) may be used alone or in combination, that is, any combination of (1) to (5) can be switched and used.

[0021] By making the ion supply unit 10 compact, it becomes easy to make the entire ion beam irradiation device 1 small, for example, into a tabletop type (i.e., a size that can fit on a single (connected) table). Figure 1 shows such a tabletop type ion beam irradiation device 1.

[0022] Hereinafter, the following description will be given taking (1) ions generated by sputtering a target material TA0 as an example. FIG. 2 is a diagram showing an example of an ion supply unit 10 according to an embodiment of the present invention. As shown in FIG. 2, the ion supply unit 10 has a housing 11, an ion source 12, a holder 13, and a supply unit 14. The housing 11 is evacuated by a vacuum pump (e.g., a turbomolecular pump) and has a path through which ions pass.

[0023] The ion source 12 emits first ions (ion beam IB0). Here, the first ions are Ga ions. The first ions may be rare gas ions. FIG. 2 shows a Ga ion beam source (LMION / manufactured by DENKA Corporation, applied voltage: 6 to 7 kV, output current: 1 to 2 μA) as an example of the ion source 12.

[0024] The holder 13 holds a target material TA0, which is sputtered by the first ions to generate second ions.

[0025] Fig. 3 is a diagram showing an example of sputtering of the target material TA0. As shown in CA1 of Fig. 3, the constituent material of the target material TA0 is scattered (sputtered) as second ions by the ion beam IB0.

[0026] The holder 13 may switchably hold a plurality of target materials TA0 that generate second ions by sputtering with first ions emitted from the ion source 12. By switching the target material TA0, the ion supply unit 10 can switch and supply ions to the ion trap unit 20. Note that this switching may be performed either manually or automatically as long as it can be performed while maintaining the vacuum inside the housing 11 (without exposing it to the atmosphere).

[0027] Here, the holder 13 has a pedestal on which the target material TA0 is placed, and the target material TA0 is placed on this pedestal. By replacing the target material TA0 on the pedestal, any ions can be supplied to the ion trap unit 20 as second ions. This enables the ion beam irradiation device 1 to precisely irradiate and implant a variety of ions, such as N, C, Si, and Ge.

[0028] 3, the holder 13 may movably hold a substrate SB having a plurality of regions on which a plurality of target materials TA0i are respectively formed. In this case, the holder 13 preferably has a switching unit that switches the target material TA0i to be irradiated with the first ions by moving the substrate SB.

[0029] The supply unit 14 supplies the second ions generated in the holder 13 to the ion trap unit 20. The supply unit 14 includes a Wien filter 141, an Einzel lens 142, and a deflector 143.

[0030] Fig. 4 is a diagram illustrating an example of the Wien filter 141. As shown in Fig. 4, the Wien filter 141 forms an electric field E and a magnetic field H that are perpendicular to each other by a pair of opposing magnets M and a pair of opposing electrode plates EL. As a result, the electric field E and the magnetic field H of the Wien filter 141 transport the second ions as an ion beam IB1 in the X-axis direction.

[0031] The Einzel lens 142 converges the ion beam IB1. The deflector 143 is, for example, a quadrupole deflector QPD. The deflector 143 changes the traveling direction of the ion beam IB1 from the X-axis direction to the positive Z-axis direction, and sends the ion beam IB1 toward the ion trap unit 20 as ion beam IB2.

[0032] In this way, in the holding section 13, the second ions generated by sputtering the target material TA0 by the first ions are converted into an ion beam IB1 by the Wien filter 141 and the Einzel lens 142, and are supplied to the ion trap section 20 as an ion beam IB2 via the deflector 143.

[0033] FIG. 5 is a graph showing an example of ions generated by sputtering. + The Si crystal of the target material TA0 is sputtered with an ion beam IB0 (acceleration voltage: about 6 keV). As a result, up to divalent Si ions (Si + , Si 2+ ) beam IB1. Graph G1a shows that the ion supply velocity and ion charge distribution can be changed by changing the Wien filter voltage Vw1 of the Wien filter 141 and the bias voltage Vw2 of the ion source 12.

[0034] Graph G1b shows that the ion supply speed can be changed by changing the voltage of the quadrupole deflector QPD. In this way, the second ions can be sorted by charge and transported from the holder 13 to the ion trap 20.

[0035] The ion trap unit 20 cools and traps ions supplied from the ion supply unit 10. The ions are cooled by irradiating them with a cooling laser LB (laser cooling). As shown in FIG. 2, the cooling laser LB is emitted from outside the housing 11 in the positive direction of the Z axis and enters the housing 11 through a window material that allows the laser LB to pass through. This laser LB travels along the ion beam IB2 and reaches the trapping region TR of the ion trap unit 20. As a result, the ion beam IB2 (second ions) that reach the trapping region TR are cooled to a few K (Kelvin) or below the mK level and are trapped in the trapping region TR. As will be described later, in the trapping region TR, the ions are arranged so that their Coulomb forces are balanced, allowing a Coulomb crystal to be formed.

[0036] 6 is a diagram showing an example of the ion trap unit 20. The ion trap unit 20 is, for example, a linear Paul trap, and has four rod-shaped electrodes 21a to 21d surrounding the axis A of the ion beam IB2. The ion trap unit 20 also has a pair of electrodes 22a and 22b arranged at the front and rear in the Z direction. A radio frequency voltage is applied between the electrodes 21a and 21b and between the electrodes 21c and 21d, and a DC voltage is applied between the electrodes 22a and 22b, and ions are trapped in the space between the electrodes 21a to 21d (trapping region TR).

[0037] More specifically, after the ions are decelerated and enter the ion trap section 20, the electrode 22a on the entrance side of the ion trap section 20 is increased in voltage at an appropriate timing (to increase the confinement potential in the Z-axis direction), thereby trapping the ions between the electrodes 22a and 22b.

[0038] Electrodes 22c and 22d are arranged further to the entrance side (negative Z-axis direction) of electrode 22a to assist in trapping ions in trapping region TR. Electrodes 22c and 22d decelerate ions before they enter trapping region TR, making it easier to stop the ions in trapping region TR. Electrodes 22c and 22d also prevent ions from flowing back from trapping region TR toward the entrance side. That is, electrodes 22c and 22d perform ion deceleration and ion backflow prevention in two stages.

[0039] Here, when ions are supplied from the ion supply unit 10 to the ion trap unit 20, it is preferable to electrostatically set the target material TA0 and the ion trap unit 20 to the same potential. The same potential means, for example, that the potential difference between the target material TA0 and the ion trap unit 20 is 10 V or less. This allows ions to be gently decelerated within the ion trap unit 20, thereby reducing ion loss due to ion deceleration within the ion trap unit 20. Note that although the ion source 12 has a potential several kV higher than that of the target material TA0, this potential difference does not actually affect the acceleration of ions. This is because the ions supplied from the ion supply unit 10 are generated from the target material TA0.

[0040] The potential on the path from the target material TA0 to the ion trap section 20 is preferably lower than the potential of the target material TA0 (and the ion trap section 20). Due to the potential difference between the target material TA0 and the path, ions generated from the target material TA0 are accelerated and transported as an ion beam IB1, pass through the Wien filter 141 and the deflector 143, and are guided to the ion trap section 20 as an ion beam IB2.

[0041] 7 is a graph showing an example of ions trapped in the trapping region TR of the ion trap unit 20. Graph G2a shows the distribution of ions in the X and Z directions. N supplied from the ion supply unit 10 2+ It can be seen that the ion beam IB2 (acceleration energy: about 0.6 keV) is transported to the ion trap section 20 and is confined in the trapping region TR. 2+The graph shows the distribution of ion position Z in the Z direction and velocity Vz. It can be seen that the ions in the trapping region TR are trapped within the trapping region TR with their position Z and velocity Vz restricted.

[0042] The trapping region TR may be somewhat wide (for example, 170 mm 3 By widening the trapping region TR, it is possible to trap more ions, for example, to form a Coulomb crystal consisting of several tens of ions.

[0043] Alternatively, the cooling laser LB may be incident (irradiated) from the exit (extraction) electrode 22b toward the entrance side, thereby increasing the probability that the ions to be emitted will be localized near the exit (extraction) electrode 22b, and enabling more precise control of the ion irradiation from the ion beam irradiation device 1.

[0044] The acceleration / focusing unit 30 accelerates and focuses the ions extracted from the ion trapping unit 20. By manipulating the voltage applied to the electrode 22b of the ion trapping unit 20, ions are extracted from the ion trapping unit 20 and accelerated and focused by the acceleration / focusing unit 30. As a result, extremely focused and highly accelerated ions can be irradiated from the ion beam irradiation device 1. At this time, by adiabatically (quasi-statically) manipulating the voltage applied to the electrode 22b of the ion trapping unit 20, ions can be extracted from the ion trapping unit 20 while suppressing heating of the cooled ions.

[0045] FIG. 8 is a graph showing an example of ions emitted from a Coulomb crystal state. Graphs G3a and G3b show the Ca + Ions and N 2+ Ions are simultaneously trapped in the ion trap section 20 and laser cooled to cryogenic temperatures. + 18 ions and N 2+ A mixed Coulomb crystal of five ions is formed.

[0046] By increasing the confinement voltage in the Z-axis direction, the N 2+ Ions can be selectively extracted from the ion trap section 20 .

[0047] The N thus extracted 2+ The ions are focused to the nanometer order by the acceleration and focusing section 30. Graph G3c shows the results of N ions accelerated to 100 keV. 2+ This is an example of calculating the particle distribution at the ion focusing point. In this example, the spot size (beam diameter BS) of the ion beam IB3 is focused to 4 nm in rms value.

[0048] FIG. 9 is a cross-sectional view showing an example of the acceleration / convergence unit 30. Here, a bipotential electrostatic lens is shown as the acceleration / convergence unit 30. The bipotential electrostatic lens has a pair of first ring-shaped electrodes 31a, 31b and a pair of second ring-shaped electrodes 32a, 32b. The pair of first ring-shaped electrodes 31a, 31b converge and accelerate ions. Ions that pass through the first ring-shaped electrode 31a are accelerated by the voltage between the ring-shaped electrodes 31a, 31b and reach the ring-shaped electrode 31b. The pair of second ring-shaped electrodes 32a, 32b further converge and accelerate the ions that have been converged and accelerated by the pair of first ring-shaped electrodes 31a, 31b.

[0049] The inner diameter DI1 and the interval G1 of the pair of first ring-shaped electrodes 31a and 31b are as follows. DI1: 0.5 to 5 mm (for example, Φ2) G1: 0.5 to 5 mm (for example, 2 mm)

[0050] The inner diameter DI2 and the interval G2 of the pair of second ring-shaped electrodes 32a and 32b are as follows. DI2: 1 to 10 [mm] (for example, Φ5) G2: 5 to 50 mm (for example, 10 mm)

[0051] The distance L1 between the ion trap section 20 and the first ring electrode 31a, and the distance L2 between the first ring electrode 31b and the second ring electrode 32a are as follows. L1: 10 to 300 mm (for example, 100 mm) l2: 10 to 300 mm (for example, 150 mm)

[0052] FIG. 10 is a diagram showing an example of a voltage applied to a bipotential electrostatic lens. The voltage V1 between the pair of first ring-shaped electrodes 31a and 31b and the voltage V2 between the pair of second ring-shaped electrodes 32a and 32b are as follows. V1 = 1 to 50 [kV] (e.g., +30 [kV]) V2 = 10 to 200 kV (e.g., +64.5 kV)

[0053] The voltage V1 between the first ring electrodes 31a and 31b and the voltage V3 between the ring electrodes 31a and 32b are as follows: V1: 1 to 50 [kV] (e.g., +30 [kV]) V3: 10 to 200 kV (e.g., +94.5 kV)

[0054] Here, the voltage shown is for accelerating singly charged ions. For multiply charged ions, the voltage can be reduced depending on the charge. For example, for doubly charged ions, the same acceleration energy can be imparted to the ions with half the voltage as for singly charged ions. Similarly, in the calculations in Figure 11, the charge of the ions is set to 1.

[0055] FIG. 11 is a graph showing an example of ions being focused and accelerated by a bipotential electrostatic lens.

[0056] Graph G5 shows the dependence of the beam diameter and working distance WD on the voltage V1 between the first ring-shaped electrodes 31a and 31b. Here, calculations were performed to determine the conditions under which a beam diameter of the ion beam IB3 of about 15 nm and a working distance WD of about 100 mm are compatible.

[0057] The following conditions were set for the calculation. Divergence angle (half value) of incident beam (ion beam incident on bipotential electrostatic lens): 30 [μrad] Incident beam diameter: 1.0 μm Incident beam energy: 5.0 keV Energy of the exit beam (ion beam exiting the bipotential electrostatic lens): 100.0 keV

[0058] From this result, it is clear that in order to achieve both a beam diameter and a working distance WD of about 100 mm, it is preferable that the voltage V1 between the ring electrodes 31a and 31b be in the range of 30 to 40 [keV].

[0059] Graph G6 shows the relationship between the divergence angle of ions incident on the bipotential electrostatic lens and the beam diameter. In this case, to suppress spherical aberration in the bipotential electrostatic lens, the divergence angle of ions extracted from the ion trap unit 20 is set to approximately 30 μrad or less.

[0060] The following conditions were set for the calculation. Incident beam diameter: 1.0 μm Incident beam energy: 5.0 keV Voltage applied to the first accelerating lens: 30 kV Energy of the exit beam: 100.0 keV

[0061] From this result, in order to make the beam diameter BS about 50 [nm] or less, the divergence angle of the ions incident on the bipotential electrostatic lens should be 5 × 10 -5 It is clear that the range of about [rad] or less is preferable.

[0062] Fig. 12 is a graph showing an example of the dependency of the working distance WD on the voltage V2 between the second ring-shaped electrodes 32a and 32b. As shown in Fig. 12, the working distance WD varies depending on the voltage V2. In Fig. 12, the extraction voltage (the voltage between the electrode 22b and the electrode 31a) is set to 2.5 kV, and the voltage V1 is set to 12.5 kV.

[0063] Various simulation results, for example, N 2+ It was found that for ions with an energy of about 100 keV, a long working distance WD of about 80 to 100 mm can be achieved by setting the extraction voltage (voltage between electrode 22b and electrode 31a) from ion trap unit 20 to 1.5 to 3.5 kV and voltage V1 to 11 to 14 kV. For example, a working distance WD of 99 mm was obtained by setting the extraction voltage to 3.5 kV, voltage V1 to 12.5 kV, and voltage V2 to 35 kV.

[0064] The ion beam irradiation device 1 according to this embodiment includes an ion supply unit 10 that can switch between ions and supply them, an ion trap unit 20 that cools and traps the ions supplied from the ion supply unit 10, and an acceleration / convergence unit 30 that accelerates and converges the ions trapped in the ion trap unit 20.

[0065] This allows the ion beam irradiation device 1 to irradiate a variety of ions without replacing the ion source.

[0066] In this embodiment, a multi-stage bipotential electrostatic lens is used as the acceleration / focusing section 30 to accelerate and focus the ions extracted from the ion trapping section 20. Because the bipotential electrostatic lens uses an electrostatic field, it is possible to prevent unintended heating of cooled ions due to a non-ideal electric field caused by high-speed voltage switching.

[0067] In this embodiment, the acceleration voltage can be set to the order of several tens of kV and a long working distance of about 100 mm can be achieved by simultaneously accelerating and focusing the ion beam using a bipotential lens.

[0068] In this embodiment, by using two stages of bipotential lenses, a high acceleration voltage of several tens of kV, a long working distance WD of about 100 mm, and a beam diameter BS of several nm are possible.

[0069] One or a few ions cooled to the mK level by laser cooling are selectively extracted, and then electrostatically accelerated and focused by a lens system of several tens of kV. In the case of multiply charged ions, it is possible to focus them to a size of about several nm with an energy of 100 keV.

[0070] The ability to irradiate any material with a variety of ion species at high densities on the order of nanometers makes it possible to fabricate integrated circuits with a variety of elements arranged on a variety of substrates. For example, by irradiating any ion species on diamond with nanometer-order positional precision, it is possible to fabricate quantum integrated circuits and quantum interfaces that densely integrate one or more types of color centers (e.g., diamond NV color centers, group IV V color centers) that function as quantum bits. In addition to diamond, any ion species can be arranged with nanometer-order precision on any substrate, including silicon, gallium nitride (GaN), and silicon carbide (SiC).

[0071] By making it possible to irradiate ions with energies of 100 keV, the range of ion implantation depth can be expanded. As a result, it becomes possible to fabricate three-dimensional integrated devices. In other words, it is possible to fabricate (quantum and classical) three-dimensional integrated circuits (3DICs) with any element arranged on any substrate.

[0072] (summary) An ion beam irradiation apparatus according to a first aspect includes: an ion supply unit capable of switching between ions and supplying them; an ion trap unit that cools and traps ions supplied from the ion supply unit; an acceleration / convergence unit that accelerates and converges the ions trapped in the ion trap unit; Equipped with.

[0073] This allows the ion beam irradiation device to switch ions for irradiation without replacing the ion source.

[0074] An ion beam irradiation apparatus according to a second aspect is the ion beam irradiation apparatus according to the first aspect, The ion supply unit ions produced by sputtering of the target material; ions produced by laser ablation of the target material, ions emitted from the plasma, ions generated by electron cyclotron resonance, and ions generated by electrospray.

[0075] This allows the ion beam irradiation device to irradiate ions generated by various means.

[0076] An ion beam irradiation apparatus according to a third aspect is the ion beam irradiation apparatus according to the second aspect, wherein the ion supply unit is an ion source that emits first ions; a holding unit that switchably holds a target material to be irradiated with first ions emitted from the ion source; and a supply unit that supplies second ions generated by sputtering the target material with the first ions as the ions.

[0077] This allows the ion beam irradiation device to irradiate a variety of ions by switching the target material.

[0078] An ion beam irradiation device according to a fourth aspect is the ion beam irradiation device according to the third aspect, wherein the holding unit movably holds a substrate having a plurality of regions on which a plurality of target materials are respectively formed, and has a switching unit that switches the target material to be irradiated with the first ions by moving the substrate.

[0079] This allows the ion beam irradiation device to irradiate a variety of ions by moving the substrate and switching the target material.

[0080] An ion beam irradiation device according to a fifth aspect is the ion beam irradiation device according to the third or fourth aspect, wherein the first ions are Ga ions or rare gas ions.

[0081] This allows the second ions to be generated and irradiated by sputtering with Ga ions and rare gas ions.

[0082] An ion beam irradiation device according to a sixth aspect is the ion beam irradiation device according to any one of the first to fifth aspects, wherein the acceleration / convergence unit is a bipotential electrostatic lens.

[0083] This allows the ions to be converged or diverged using a bipotential electrostatic lens.

[0084] An ion beam irradiation device according to a seventh aspect is the ion beam irradiation device according to the sixth aspect, wherein the bipotential electrostatic lens is a pair of first ring-shaped electrodes for focusing and accelerating ions; and a pair of second ring-shaped electrodes that further focus and accelerate the ions that have been focused and accelerated by the pair of first ring-shaped electrodes.

[0085] This allows the ions to be converged and diverged in two stages using a bipotential electrostatic lens.

[0086] The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of the present invention. [Explanation of symbols]

[0087] 1. Ion beam irradiation equipment 10 Ion supply unit 11. Housing 12 Ion source 13 Holding part 14 Supply section 20 Ion trap section 21a~21d, 22a~22d electrode 30 Acceleration and convergence section 31a, 31b First ring-shaped electrodes 32a, 32b Second ring-shaped electrodes 141 Vienna Filter 142 Einzellens 143 Deflector

Claims

1. an ion supply unit capable of switching between ions and supplying them; an ion trap unit that cools and traps ions supplied from the ion supply unit; an acceleration / focusing unit that accelerates and focuses the ions trapped in the ion trapping unit; An ion beam irradiation device comprising:

2. The ion supply unit ions produced by sputtering of the target material; ions produced by laser ablation of the target material, ions emitted from the plasma, ions generated by electron cyclotron resonance, and 2. The ion beam irradiation device according to claim 1, wherein the ion beam is generated by either a gas or a liquid, or by electrospray.

3. The ion supply unit is an ion source that emits first ions; a holding unit that switchably holds a target material to be irradiated with first ions emitted from the ion source; 3. The ion beam irradiation device according to claim 2, further comprising: a supply unit that supplies, as the ions, second ions generated by sputtering of the target material by the first ions.

4. 4. The ion beam irradiation device according to claim 3, wherein the holding unit movably holds a substrate having a plurality of regions on which a plurality of target materials are respectively formed, and includes a switching unit that switches the target material to be irradiated with the first ions by moving the substrate.

5. 5. The ion beam irradiation device according to claim 3, wherein the first ions are Ga ions or rare gas ions.

6. 4. The ion beam irradiation device according to claim 1, wherein the acceleration and converging unit is a bipotential electrostatic lens.

7. The bipotential electrostatic lens is a pair of first ring-shaped electrodes for focusing and accelerating ions; 7. The ion beam irradiation device according to claim 6, further comprising a pair of second ring-shaped electrodes that further focus and accelerate the ions focused and accelerated by the pair of first ring-shaped electrodes.

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