Harmonic processing circuit and amplifier

Abstract

To provide a high-performance harmonic processing circuit.SOLUTION: For example, the harmonic processing circuit 40 is used in the amplifier 1. The harmonic processing circuit 40 includes a transmission line 30 for transmitting a fundamental wave, a wiring 41 connected to the transmission line 30, a wiring 42 provided in parallel with the wiring 41 and apart from the wiring 41, and a dielectric film 43 interposed between the wiring 41 and the wiring 42. In the wire 41, one end 41a is connected to the transmission line 30, the other end 41b is opened, and a length between the one end 41a and the other end 41b is set to a quarter-wavelength of a predetermined harmonic with respect to the fundamental wave. In the interconnection 42, both ends of the one end 42a and the other end 42b are opened, and a length between the one end 42a and the other end 42b is set to a quarter-wavelength of a predetermined harmonic. The predetermined harmonic is short-circuited by capacitive coupling with the wiring 41 and the wiring 42.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a harmonic processing circuit and an amplifier. [Background technology]

[0002] A harmonic processing circuit that shorts out a double wave using a pair of transmission lines with a length equal to 1 / 8 the wavelength of the fundamental wave, and an amplifier using the circuit are known (Patent Document 1).For example, a technique is known in which one transmission line has one end connected to an amplifying element and the other end open, and another transmission line with both ends open is placed parallel to the other with a gap (Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-142827 Summary of the Invention [Problem to be solved by the invention]

[0004] In amplifiers that use harmonic processing circuits, if the performance of the harmonic processing circuit is insufficient, this can lead to performance degradation, such as a reduction in the signal frequency band and a decrease in power added efficiency (PAE) due to losses.

[0005] In one aspect, the present invention aims to realize a high-performance harmonic processing circuit. [Means for solving the problem]

[0006] In one aspect, a harmonic processing circuit is provided, including: a transmission line for transmitting a fundamental wave; a first wiring having one end connected to the transmission line and the other end open, the length between the one end and the other end being 1 / 4 wavelength of a predetermined harmonic of the fundamental wave; a second wiring arranged parallel to and spaced apart from the first wiring, having both ends open, the length between the two ends being 1 / 4 wavelength of the predetermined harmonic; and a first dielectric film interposed between the first wiring and the second wiring.

[0007] In another aspect, an amplifier is provided that includes the above-described harmonic processing circuit. [Effects of the Invention]

[0008] In one aspect, it becomes possible to realize a high-performance harmonic processing circuit. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a diagram illustrating an example of an amplifier. [Figure 2] 1 is a diagram illustrating an example of an amplifier including a harmonic processing circuit according to a first embodiment. [Figure 3] FIG. 2 is a diagram illustrating an example of a harmonic processing circuit according to the first embodiment. [Figure 4] 10A and 10B are diagrams illustrating a first modified example of an amplifier including a harmonic processing circuit according to the first embodiment. [Figure 5] 10A and 10B are diagrams illustrating a second modified example of the amplifier including the harmonic processing circuit according to the first embodiment. [Figure 6] 10 is a diagram illustrating a first configuration example of a harmonic processing circuit according to a second embodiment. FIG. [Figure 7] 10A and 10B are diagrams further illustrating the first configuration example of the harmonic processing circuit according to the second embodiment. [Figure 8] FIG. 10 is a diagram illustrating a second configuration example of a harmonic processing circuit according to a second embodiment. [Figure 9]10A and 10B are diagrams further illustrating a second configuration example of the harmonic processing circuit according to the second embodiment. [Figure 10] 10 is a diagram illustrating a third configuration example of the harmonic processing circuit according to the second embodiment. FIG. [Figure 11] 10A and 10B are diagrams further illustrating the third configuration example of the harmonic processing circuit according to the second embodiment. [Figure 12] FIG. 10 is a diagram illustrating a configuration example of an amplifier according to a third embodiment. [Figure 13] 10A and 10B are diagrams illustrating an example of a simulation result for the amplifier according to the third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] As an example of a transistor capable of operating at high frequency and high output, a transistor using a nitride semiconductor such as gallium nitride (GaN), for example, a high electron mobility transistor (HEMT), is known. Technology for using such a transistor in an amplifier is known.

[0011] Fig. 1 is a diagram illustrating an example of an amplifier, and schematically shows an equivalent circuit of the example of the amplifier. 1 includes an amplifying element, a transistor 110. For example, the transistor 110 may be a transistor such as a HEMT using a nitride semiconductor such as GaN.

[0012] An input matching circuit 120 is connected to the input side of the transistor 110, i.e., the gate G side. The input matching circuit 120 is provided to match the impedance of the power supply side connected to the gate G of the transistor 110 with the impedance of the input side of the transistor 110. For example, the impedance is set to 50 Ω or thereabouts.

[0013] A transmission line 130, a harmonic processing circuit 140, and an output-side matching circuit 150 are connected to the output side of the transistor 110, i.e., the drain D side. The harmonic processing circuit 140 is connected to the transmission line 130 that connects the drain D of the transistor 110 and the output-side matching circuit 150. The output-side matching circuit 150 is provided to match the impedance of the load connected to the drain D of the transistor 110 with the impedance of the output side of the transistor 110, including the transmission line 130 and the harmonic processing circuit 140. For example, the impedance is set to 50 Ω or thereabouts.

[0014] The source S of the transistor 110 is grounded. Here, the harmonic processing circuit 140 of the amplifier 100 having the above configuration will be described. In the amplifier 100, a high-frequency signal is input to the transistor 110, and the amplified high-frequency signal is output from the transistor 110. The high-frequency signal that operates the transistor 110 is also called the fundamental wave, and its frequency is also called the operating frequency. In the amplifier 100, in order to reduce power consumption and increase power efficiency, a frequency f1 that is n times (n is an integer of 2 or more) the frequency f1 of the fundamental wave (operating frequency) is set. n A harmonic processing circuit 140 is connected to short-circuit the n-th harmonic (n-th multiple wave) which is a component of the above.

[0015] For example, the harmonic processing circuit 140 uses an open-end stub, so-called open stub 141, which has one end connected to the transmission line 130 and the other end (end) open. The harmonic processing circuit 140 may include the transmission line 130 or a part thereof. The open stub 141 is connected to the transmission line 130. The transmission line 130 is a transmission line for transmitting a fundamental wave. The length of the transmission line 130 is set to, for example, λ1 / 4, where λ1 is the wavelength of the frequency f1 of the fundamental wave. The length of the open stub 141 is set to, for example, λ1 / 4, the wavelength of the frequency f1 of the nth harmonic. n The wavelength of λ n As, λ n / 4.

[0016] The fundamental frequency f1 and the nth harmonic frequency fn The relationship between the wavelength λ1 of the fundamental wave and the wavelength λ of the n-th harmonic is given by the following equation (1). n There is a relationship between them as shown in the following equation (2). f n =f1×n (1) λ n =λ1 / n (2) The open stub 141 is connected to the nth harmonic frequency f n This is a stub for forming a short circuit point.

[0017] In general, the input impedance of an open stub is Z in is expressed by the following equation (3). Z in =-jZ0cot(β×L) (3) In equation (3), L is the length of the open stub. β is the phase constant, which is the phase angle that changes as the signal wave travels through the open stub over a unit length. β = 2π / λ, where λ is the wavelength of the signal wave. Note that β × L represents the electrical length of the open stub. Z0 is the characteristic impedance (width) of the open stub.

[0018] Now, if we set L=λ / 4 and β=2π / λ, equation (3) becomes the following equation (3a), and the input impedance of the open stub is Z in is 0, i.e., a short circuit. Z in =-jZ0cot((2π / λ)×(λ / 4))=0...(3a) Here, in the harmonic processing circuit 140, the frequency f n and wavelength λ n When the n-th harmonic of the open stub 141 is short-circuited, the input impedance Z in is expressed as the following equation (3b).

[0019] Z in =-jZ0cot((2π / λ n )×(λ n / 4))=0 (3b) Therefore, the length of the open stub 141 for shorting the n-th harmonic is set to L nThen, the length L n can be expressed as the following equation (4):

[0020] L n =λ n / 4=(λ1 / n) / 4=λ1 / (4×n)···(4) Therefore, the length L of the open stub 141 n The wavelength of the nth harmonic, λ n If the wavelength is set to 1 / 4 of the fundamental wave, that is, 1 / (4×n) of the wavelength λ1 of the fundamental wave, the frequency of the nth harmonic will be n The input impedance Z of the open stub 141 in becomes 0, resulting in a short circuit. For example, in the case of short-circuiting the second harmonic of frequency f2 and wavelength λ2, i.e., the double wave, the length L2 of the open stub 141 can be set to 1 / 4 of the wavelength λ2 of the double wave or 1 / 8 of the wavelength λ1 of the fundamental wave.

[0021] In the harmonic processing circuit 140, the length L of the open stub 141 is determined based on the n-th harmonic (n-th multiple wave) to be processed (short-circuited). n is set. As described above, harmonic processing circuit 140 is provided to reduce the power consumption of amplifier 100 and increase the power efficiency. In harmonic processing circuit 140, the length L of open stub 141 formed by a single wire is determined based on the n-th harmonic to be short-circuited. n Furthermore, in harmonic processing circuit 140, width W0 of open stub 141 formed by one wire is set based on the characteristic impedance.

[0022] However, in amplifier 100, the parasitic capacitance caused by providing harmonic processing circuit 140 may cause degradation of characteristics such as a reduction in the signal frequency band and a decrease in PAE due to loss (such as reflection loss).

[0023] For example, the open stub 141 of the harmonic processing circuit 140 is realized in the form of a microstrip line or the like together with the transmission line 130 or the transmission line of the output-side matching circuit 150. Therefore, parasitic capacitance may occur between the open stub 141 and the surrounding conductors such as the transmission line 130 or the conductor layer of the microstrip line. The length L of the open stub 141 formed of a single wire as in the harmonic processing circuit 140 n If the width W0 of the open stub 141 becomes relatively large, the possibility of parasitic capacitance occurring increases. n Even if the value is set based on the nth harmonic, it may affect the short circuit, reflection, phase, etc. of the nth harmonic, which may result in a decrease in the signal frequency band, a decrease in PAE due to loss, and other degradation in the characteristics of the amplifier 100.

[0024] If the performance of harmonic processing circuit 140 is insufficient due to the generation of parasitic capacitance in this way, amplifier 100 with a wide band and high power efficiency may not be obtained. In view of the above, the configuration shown below as an embodiment is adopted to realize a high-performance harmonic processing circuit and an amplifier equipped with such a harmonic processing circuit.

[0025] [First embodiment] Fig. 2 is a diagram illustrating an example of an amplifier including a harmonic processing circuit according to the first embodiment, and schematically shows an equivalent circuit of the example amplifier.

[0026] 2 includes an amplifying element, that is, a transistor 10. For example, the transistor 10 may be a transistor such as a HEMT using a nitride semiconductor such as GaN. An input matching circuit 20 is connected to the input side of the transistor 10, i.e., the gate G side. The input matching circuit 20 is provided to match the impedance of the power supply side connected to the gate G of the transistor 10 with the impedance of the input side of the transistor 10. For example, the impedance is set to 50 Ω or thereabouts.

[0027] A transmission line 30, a harmonic processing circuit 40, and an output-side matching circuit 50 are connected to the output side of the transistor 10, i.e., the drain D side. The harmonic processing circuit 40 is connected to the transmission line 30, which connects the drain D of the transistor 10 and the output-side matching circuit 50. The harmonic processing circuit 40 may include the transmission line 30 or a part thereof, or may further include the transmission line of the output-side matching circuit 50 or a part thereof. The output-side matching circuit 50 is provided to match the impedance of the load connected to the drain D of the transistor 10 with the impedance of the output side of the transistor 10, including the transmission line 30 and the harmonic processing circuit 40. For example, the impedance is set to 50 Ω or thereabouts.

[0028] The source S of the transistor 10 is grounded. Here, the harmonic processing circuit 40 of the amplifier 1 having the above configuration will be described. The harmonic processing circuit 40 of the amplifier 1 includes two lines, 41 and 42. For example, the lines 41 and 42, together with the transmission line 30 and / or the transmission line of the output-side matching circuit 50, are realized in the form of a microstrip line or the like.

[0029] The wiring 41 has one end 41a connected to the transmission line 30 and the other end 41b open. The wiring 41 is a so-called open-end type open stub. The length L between the one end 41a and the other end 41b of the wiring 41 is n is set to a quarter wavelength of a predetermined harmonic relative to the fundamental wave. n is the frequency f that is n times (n is an integer of 2 or more) the fundamental wave frequency f1 (operating frequency). n The wavelength λ of the nth harmonic (nth multiple wave) is nThe width W of the wiring 41 is set to 1 / 4 of the width W of the wiring 41. n is set to a width smaller than width W0 of one open stub 141 of harmonic processing circuit 140 in amplifier 100 described above in FIG. 1, for example, half the width W0.

[0030] The wiring 42 is provided in parallel to the wiring 41 and spaced apart from the wiring 41. Both ends of the wiring 42, i.e., one end 42a and the other end 42b, are open. The length between the one end 42a and the other end 42b of the wiring 42 is, like the wiring 41, ¼ wavelength of a predetermined harmonic of the fundamental wave, i.e., frequency f1, which is n times the frequency f1 of the fundamental wave. n The wavelength λ of the nth harmonic, which is a component of n The width W of the wiring 42 is set to 1 / 4 of the n is set to a width smaller than width W0 of one open stub 141 of harmonic processing circuit 140 in amplifier 100 described above in FIG. 1, for example, half the width W0.

[0031] The wiring 42 is provided so that a dielectric film 43 is interposed between the wiring 42 and the wiring 41. The dielectric film 43 interposed between the wiring 42 and the wiring 41 is made of various resins or materials such as various oxides, nitrides, and oxynitrides. The dielectric film 43 is interposed between the wiring 42 and the wiring 41, and the wiring 42 is capable of capacitive coupling with the wiring 41 via the dielectric film 43 for a predetermined harmonic. The spacing between the wirings 41 and 42 and the material of the dielectric film 43 provided thereon are determined based on, for example, the frequency of the fundamental wave f1 and the frequency of the n-th harmonic based thereon f n It is set based on

[0032] The transmission line 30 is a transmission line for transmitting the fundamental wave. The length of the transmission line 30 is set to, for example, ¼ of the wavelength λ1 of the fundamental wave. 2, for the convenience of explaining the circuit configuration of amplifier 1, wiring 41, wiring 42, and dielectric film 43 interposed therebetween are shown as harmonic processing circuit 40. However, when harmonic processing circuit 40 is realized in the form of a microstrip line or the like, wiring 41 is formed continuous with transmission line 30 so as to be connected to transmission line 30 at one end 41a. Wiring 41 may also be formed continuous with the transmission line of output-side matching circuit 50. Elements of harmonic processing circuit 40 may include wiring 41, wiring 42, and dielectric film 43 interposed therebetween, as well as transmission line 30 or a portion thereof, or further, the transmission line of output-side matching circuit 50 or a portion thereof.

[0033] The wiring 41 of the harmonic processing circuit 40 is also referred to as the "first wiring," the wiring 42 is also referred to as the "second wiring," and the dielectric film 43 is also referred to as the "first dielectric film." In amplifier 1, a high-frequency signal is input to transistor 10, and the amplified high-frequency signal is output from transistor 10. In order to reduce power consumption and improve power efficiency, amplifier 1 is connected to a harmonic processing circuit 40 that short-circuits a predetermined n-th harmonic wave of the fundamental wave, such as a second harmonic wave.

[0034] Figure 3 is a diagram illustrating an example of a harmonic processing circuit according to the first embodiment. Figure 3(A) is a diagram illustrating the function of the harmonic processing circuit for the fundamental wave. Figure 3(B) is a diagram illustrating the function of the harmonic processing circuit for the second harmonic wave. Figures 3(A) and 3(B) schematically show equivalent circuits of the harmonic processing circuit and the transmission line connected thereto.

[0035] As an example, the case where a double wave with a wavelength λ2 and a frequency f2 that is twice the frequency f1 of the fundamental wave is to be short-circuited will be described. In this case, the wiring 41 and wiring 42 of the harmonic processing circuit 40 are arranged parallel to and spaced apart via a dielectric film 43, and each of them has a length L2 that is set to ¼ the wavelength of the double wave, i.e., λ2 / 4.

[0036] In the harmonic processing circuit 40, the length L2 of the wiring 41, one end 41a of which is connected to the transmission line 30, and the length L2 of the wiring 42, which is arranged parallel to and spaced from the wiring 41, are set to 1 / 4 wavelength (λ2 / 4) of the double wave, in other words, 1 / 8 wavelength (λ1 / 8) of the fundamental wave. As a result, for the fundamental wave of frequency f1, capacitive coupling between the wiring 41 and the wiring 42 is either absent or very small, as shown in FIG. 3(A). That is, for the fundamental wave, of the wiring 41 and the wiring 42 of the harmonic processing circuit 40, only the wiring 41 connected to the transmission line 30 (area 40a) is visible and effective. The harmonic processing circuit 40 can be regarded as a single wiring 41 with the other end 41b open and a length 1 / 8 the wavelength of the fundamental wave, and functions as a capacitor for the fundamental wave.

[0037] On the other hand, for the second harmonic wave of frequency f2 (= f1 × 2), the length L2 of the wiring 41 and the wiring 42 is set to 1 / 4 wavelength (λ2 / 4) of the second harmonic wave, so that the wiring 41 and the wiring 42 are capacitively coupled as shown in FIG. 3B. That is, for the second harmonic wave, both the wiring 41 of the harmonic processing circuit 40 and the wiring 42 capacitively coupled thereto (area 40b) are visible and effective. Note that in FIG. 3B, the capacitive coupling between the wiring 41 and the wiring 42 is represented by connecting the wiring 41 and the wiring 42 with a capacitor 40c. In the harmonic processing circuit 40, for the second harmonic wave, the wiring 41 and the wiring 42 can be regarded as a single capacitively coupled open-ended stub, i.e., an open stub. The single open stub formed by the capacitively coupled wiring 41 and the wiring 42 shorts out the second harmonic wave.

[0038] In this way, in harmonic processing circuit 40, for the fundamental wave, wire 41 is regarded as a single wire and functions as a capacitor, and for the double wave, two wires 41 and 42 function as a single open stub due to capacitive coupling. This short-circuits the double wave, suppressing the influence of the double wave on the fundamental wave transmitted from transmission line 30 to output-side matching circuit 50.

[0039] In harmonic processing circuit 40, the lengths L2 of the two wirings 41 and 42 are both set to λ2 / 4, and the width W2 is set to a width (e.g., half the width W0) smaller than the width W0 of the single open stub 141 of harmonic processing circuit 140 described above in FIG. 1. Therefore, in harmonic processing circuit 40, when wiring 41 is used for the fundamental wave, the area of ​​wiring 41 is smaller than the area of ​​open stub 141. Therefore, in harmonic processing circuit 40, parasitic capacitance is reduced in the transmission of the fundamental wave, and losses (such as reflection loss) caused by parasitic capacitance are suppressed.

[0040] The above configuration realizes a high-performance harmonic processing circuit 40 that can suppress the influence of the second harmonic on the fundamental wave and further reduce parasitic capacitance and loss in the transmission of the fundamental wave. Furthermore, by using such a high-performance harmonic processing circuit 40, a high-performance amplifier 1 can be realized that can suppress a decrease in PAE due to a reduction in frequency band and loss.

[0041] Although the case where a double wave is the target has been described here, the dimensions of the wiring 41 and the wiring 42 can be set according to this example even when other n-th multiple waves are the target. For example, when a triple harmonic wave is the target, the length L3 of each of the wiring 41 and the wiring 42 is set to 1 / 4 wavelength (λ3 / 4) of the triple harmonic wave, that is, 1 / 12 wavelength (λ1 / 12) of the fundamental wave. The width W3 of each of the wiring 41 and the wiring 42 is set to a width smaller than the width W0 of one open stub 141 of the harmonic processing circuit 140 described in FIG. 1 (for example, half the width W0).

[0042] For example, when a fourth harmonic wave is the target, the length L4 of each of the wiring 41 and the wiring 42 is set to 1 / 4 wavelength (λ4 / 4) of the fourth harmonic wave, that is, 1 / 16 wavelength (λ1 / 16) of the fundamental wave. The width W4 of each of the wiring 41 and the wiring 42 is set to a width smaller than the width W0 of one open stub 141 of the harmonic processing circuit 140 described in FIG. 1 (for example, half the width W0).

[0043] For the fifth harmonic wave, sixth harmonic wave, etc., the dimensions of the wiring 41 and the wiring 42 are set in accordance with these examples. Wiring 41 and wiring 42, which are set to predetermined dimensions based on the nth harmonic wave to be shorted, are arranged parallel to and spaced apart with a predetermined dielectric film 43 interposed therebetween. This realizes harmonic processing circuit 40, which functions as a single wiring 41 for the fundamental wave and shorts out the nth harmonic wave to be shorted by the two capacitively coupled wirings 41 and 42.

[0044] In the harmonic processing circuit 40, a dielectric film 43 is interposed between the wiring 41 and the wiring 42. Various dielectric materials, i.e., dielectric materials with various relative permittivities, can be used for the dielectric film 43. Therefore, in the harmonic processing circuit 40, the capacitance between the wiring 41 and the wiring 42 can be adjusted to an appropriate value with greater precision than when a gap (air gap) is provided between the wiring 41 and the wiring 42. That is, in order to adjust the capacitance between the wiring 41 and the wiring 42, the harmonic processing circuit 40 can select not only the spacing between the wiring 41 and the wiring 42 but also the type of dielectric film 43 interposed between the wiring 41 and the wiring 42. Therefore, in the harmonic processing circuit 40, the capacitance between the wiring 41 and the wiring 42 can be adjusted using more parameters than when a gap is provided between the wiring 41 and the wiring 42, and the capacitance can be adjusted to an appropriate value with greater precision.

[0045] Furthermore, while FIG. 2 shows an example in which one harmonic processing circuit 40 is provided to short-circuit a predetermined n-th harmonic wave (for example, a second harmonic wave), the number of harmonic processing circuits is not limited to this. Fig. 4 is a diagram illustrating a first modified example of an amplifier including a harmonic processing circuit according to the first embodiment, which diagrammatically shows an equivalent circuit of one example of the amplifier.

[0046] Amplifier 1A shown in Fig. 4 has a configuration in which harmonic processing circuit 40A that short-circuits the (n+1)th harmonic wave in addition to harmonic processing circuit 40 that short-circuits the nth harmonic wave. Amplifier 1A differs from amplifier 1 shown in Fig. 2 above in that it has such a configuration.

[0047] The wiring 41 and the wiring 42 of the harmonic processing circuit 40 each have a length L n is the wavelength of the nth wave, λ n The width W is set to 1 / 4 of the n is set to a width smaller than the width W0 of the single open stub 141 (FIG. 1) (for example, half the width W0). A dielectric film 43 is provided between the wiring 41 and the wiring .

[0048] The wiring 41A and the wiring 42A of the harmonic processing circuit 40A each have a length L n+1 is the wavelength of the n+1 harmonic wave λ n+1 The width W is set to 1 / 4 of the n+1 is set to a width smaller than the width W0 of the single open stub 141 (FIG. 1) (for example, half the width W0). Wiring 41A is an open stub with one end connected to transmission line 30 and the other end open. Wiring 42A is provided parallel to and spaced apart from wiring 41A. A dielectric film 43A is provided between wiring 41A and wiring 42A.

[0049] The wiring 41A of the harmonic processing circuit 40A is also referred to as the "first wiring," the wiring 42A is also referred to as the "second wiring," and the dielectric film 43A is also referred to as the "first dielectric film." For example, harmonic processing circuit 40 may be designed to short-circuit the second harmonic, and harmonic processing circuit 40A may be designed to short-circuit the third harmonic. As in this amplifier 1A, harmonic processing circuits 40 and 40A, which short-circuit different harmonics, may be connected in parallel to transmission line 30.

[0050] In amplifier 1A, harmonic processing circuit 40 functions as a single wiring 41 for the fundamental wave, and shorts out the nth harmonic wave to be shorted using two capacitively coupled wirings 41 and 42. Harmonic processing circuit 40A functions as a single wiring 41 for the fundamental wave, and shorts out the n+1th harmonic wave to be shorted using two capacitively coupled wirings 41A and 42A.

[0051] In amplifier 1A, harmonic processing circuit 40 and harmonic processing circuit 40A can suppress the effects of both the nth and (n+1)th harmonics on the fundamental wave, and can also reduce parasitic capacitance and loss in the transmission of the fundamental wave. This realizes amplifier 1A that can further suppress the reduction in PAE due to a reduction in frequency band and loss.

[0052] It should be noted that, following the example of this amplifier 1A, it is also possible to realize an amplifier further provided with a harmonic processing circuit that short-circuits harmonics such as n+2 and n+3 harmonics. Although FIG. 2 shows an example in which the harmonic processing circuit 40 is provided on the output side of the transistor 10, the harmonic processing circuit can also be provided on the input side of the transistor 10.

[0053] Fig. 5 is a diagram illustrating a second modified example of an amplifier including a harmonic processing circuit according to the first embodiment, which diagrammatically shows an equivalent circuit of one example of the amplifier. 5 has a configuration in which a harmonic processing circuit 40 that shorts out n-th harmonic waves is provided on the drain D side, which is the output side of transistor 10, and a harmonic processing circuit 40B that shorts out n-th harmonic waves is also provided on the gate G side, which is the input side of transistor 10. Amplifier 1B differs from amplifier 1 shown in FIG. 2 above in that it has such a configuration.

[0054] The wiring 41 and the wiring 42 of the output-side harmonic processing circuit 40 each have a length L n is the wavelength of the nth wave, λ n The width W is set to 1 / 4 of the n is set to a width smaller than the width W0 of the single open stub 141 (FIG. 1) (for example, half the width W0). A dielectric film 43 is provided between the wiring 41 and the wiring .

[0055] The input-side harmonic processing circuit 40B can have, for example, the same configuration as the output-side harmonic processing circuit 40. For example, the wiring 41B and the wiring 42B of the harmonic processing circuit 40B each have a length L n is the wavelength of the nth wave, λ nThe width W is set to 1 / 4 of the n is set to a width smaller than the width W0 of the single open stub 141 (FIG. 1) (for example, half the width W0). Wiring 41B is an open stub with one end connected to the transmission line of the input-side matching circuit 20 or a transmission line connected thereto and the other end open. Wiring 42B is provided in parallel to and spaced apart from wiring 41B. A dielectric film 43B is provided between wiring 41B and wiring 42B.

[0056] The wiring 41B of the harmonic processing circuit 40B is also referred to as the "first wiring," the wiring 42B is also referred to as the "second wiring," and the dielectric film 43B is also referred to as the "first dielectric film." The amplifier 1B can achieve the same effect as the amplifier 1 on the output side of the transistor 10. The amplifier 1B can also suppress the influence of the nth harmonic on the fundamental wave on the input side of the transistor 10, and furthermore, can reduce parasitic capacitance and loss in the transmission of the fundamental wave. This realizes the amplifier 1B, which can further suppress the reduction in PAE due to a reduction in frequency band and loss.

[0057] Furthermore, a harmonic processing circuit 40B can be provided on the input side of the transistor 10 of the amplifier 1B to short-circuit harmonics (such as n+1 harmonics) different from the harmonics (such as n harmonics) that are to be short-circuited on the output side.

[0058] Furthermore, a plurality of harmonic processing circuits for short-circuiting different types of harmonics can be provided on the output side or input side of the transistor 10 of the amplifier 1B, similar to the example of the amplifier 1A shown in FIG.

[0059] The transistor 10 of the amplifiers 1, 1A, and 1B described above is not limited to a transistor such as a HEMT using a nitride semiconductor such as GaN, but various transistors that function as an amplifying element can be applied.

[0060] [Second embodiment] Here, the configuration examples (first to third configuration examples) of the harmonic processing circuit 40 etc. will be described as the second embodiment.

[0061] (First configuration example) 6A and 6B are diagrams illustrating a first configuration example of a harmonic processing circuit according to a second embodiment. Fig. 6A is a schematic plan view of a main part of the harmonic processing circuit. Fig. 6B is a schematic cross-sectional view of a main part of the harmonic processing circuit. Fig. 6B is a schematic cross-sectional view taken along line VI-VI of Fig. 6A.

[0062] 6(A) and 6(B) is an example of the harmonic processing circuit 40, etc. Harmonic processing circuit 200 includes a conductor layer 210, a dielectric film 220, a dielectric film 230, a wiring 240, and a wiring 250.

[0063] Various conductive materials can be used for the conductor layer 210. For example, the conductor layer 210 can be made of one or more conductive materials selected from Cu (copper), Al (aluminum), Ag (silver), Au (gold), Mo (molybdenum), Pd (palladium), Ni (nickel), and Pt (platinum). The conductor layer 210 can have a single-layer structure of one type of conductive material, or a laminate structure of one or more conductive materials. Any element or conductive material can be used for the conductor layer 210 as long as it has a certain level of thermal conductivity and electrical conductivity. As an example, the conductor layer 210 can be made of a metal layer mainly composed of Cu with Au plating on its surface. For example, the conductor layer 210 is set to a ground potential.

[0064] As shown in FIG. 6B, the dielectric film 220 is provided on the surface 210a of the conductor layer 210. The dielectric film 230 is provided on the surface 220a of the dielectric film 220 opposite the conductor layer 210. Various dielectric materials are used for the dielectric film 220 and the dielectric film 230. For example, the dielectric film 220 and the dielectric film 230 each include one or more dielectric materials selected from the group consisting of resin, SiN (silicon nitride), SiO (silicon oxide), AlN (aluminum nitride), AlO (aluminum oxide), AlSiO (aluminum silicate), AlON (aluminum oxynitride), and MgO (magnesium oxide). The dielectric film 220 and the dielectric film 230 each may have a single-layer structure of one type of dielectric material or a laminate structure of one or more types of dielectric materials. The dielectric film 220 and the dielectric film 230 may be made of the same type of dielectric material or different types of dielectric materials. For example, the dielectric film 220 and the dielectric film 230 may be made of dielectric materials having the same relative dielectric constant, or may be made of dielectric materials having different relative dielectric constants.

[0065] As shown in FIG. 6(A), the wiring 240 is an open stub, having one end 241 connected to a transmission line 260 for transmitting a fundamental wave and the other end 242 open. The transmission line 260 is an example of the transmission line 30 described in the first embodiment. The wiring 240 and its one end 241 and its other end 242 are examples of the wiring 41 and its one end 41a and other end 41b described in the first embodiment, respectively. As shown in FIGS. 6(A) and 6(B), the wiring 240 and the transmission line 260 are provided on a surface 230a of the dielectric film 230 opposite to the dielectric film 220 side.

[0066] As shown in Fig. 6(A), the wiring 250 is a wiring whose both ends, i.e., one end 251 and the other end 252, are open. The wiring 250 is provided parallel to and spaced apart from the wiring 240. The wiring 250 and its one end 251 and the other end 252 are examples of the wiring 42 and its one end 42a and the other end 42b described in the first embodiment, respectively. As shown in Figs. 6(A) and 6(B), the wiring 250 is provided on a surface 220a of the dielectric film 220 opposite to the conductor layer 210 side, and is covered with the dielectric film 230.

[0067] As shown in Figures 6(A) and 6(B), the wiring 240 and the wiring 250 are provided so as to partially overlap each other in plan view and cross-sectional view. Capacitive coupling 270 (Figure 6(B)) is realized by the overlapping portions of the wiring 240 and the wiring 250 and a portion 231 of the dielectric film 230 interposed therebetween. The portion 231 of the dielectric film 230 interposed between the overlapping wiring 240 and the wiring 250 functions as the dielectric film 43 described in the first embodiment.

[0068] Various conductive materials are used for the wiring 240 and the wiring 250. For example, the wiring 240 and the wiring 250 can each be made of a conductive material containing one or more selected from Cu, Al, Ag, Au, Mo, Ni, Pt, Ti (titanium), and W (tungsten). The wiring 240 and the wiring 250 can each have a single-layer structure of one type of conductive material, or a laminate structure of one or more types of conductive materials. The wiring 240 and the wiring 250 can each be made of any element or conductive material as long as it has at least a certain level of thermal conductivity and electrical conductivity.

[0069] The harmonic processing circuit 200 is realized, for example, in the form of a microstrip line. As described in the first embodiment, the dimensions (length and width) of the wiring 240 and wiring 250 are set based on the fundamental wave and the harmonic to be short-circuited. The thickness of the dielectric film 230 interposed between the wiring 240 and wiring 250, i.e., the spacing of the overlapping portions of the wiring 240 and wiring 250, is set based on the material (dielectric constant) of the dielectric film 230. The thicknesses of the dielectric film 230 and the dielectric film 220 between the wiring 240 and the conductor layer 210, and the thickness of the dielectric film 220 between the wiring 250 and the conductor layer 210, are set based on the material (dielectric constant) of the dielectric film 230 and the dielectric film 220 and the characteristic impedance of the dielectric film 230 and the dielectric film 220. In the harmonic processing circuit 200, the material of the conductor layer 210, the materials and dimensions of the dielectric films 220 and 230, and the materials and dimensions of the wiring 240 and wiring 250 are appropriately selected so that the harmonics to be short-circuited can be short-circuited by the capacitive coupling 270.

[0070] In harmonic processing circuit 200, the spacing of the overlapping portion between wiring 240 and wiring 250 and the material (its relative dielectric constant) of dielectric film 230, part 231 of which is interposed between wiring 240 and wiring 250, are selected appropriately. As a result, in harmonic processing circuit 200, the capacitance value between wiring 240 and wiring 250 can be adjusted to an appropriate value with high precision, compared to when a gap (air gap) is formed between wiring 240 and wiring 250.

[0071] Incidentally, harmonic processing circuit 200 may be mounted on another component by joining conductor layer 210 to the other component using a joining material such as solder or resin. Furthermore, a double-sided printed circuit board may be used for the layered structure of conductor layer 210, dielectric film 220, and wiring 250 in harmonic processing circuit 200. That is, harmonic processing circuit 200 may use a double-sided printed circuit board in which wiring 250 is provided on one surface 220a of dielectric film 220 made of resin or the like, and conductor layer 210 is provided on the other surface on the opposite side. In such a double-sided printed circuit board, dielectric film 230 covering wiring 250 may be provided on surface 220a of dielectric film 220, and wiring 240 and transmission line 260 may be provided on surface 230a of dielectric film 230.

[0072] Furthermore, conductor layer 210 in harmonic processing circuit 200 may be a conductor layer provided on one surface of a single-sided or double-sided printed circuit board. Dielectric film 220 may be provided on surface 210a of conductor layer 210 provided on such a printed circuit board, wiring 250 and dielectric film 230 may be provided on surface 220a of dielectric film 220, and wiring 240 and transmission line 260 may be provided on surface 230a of dielectric film 230.

[0073] Fig. 7 is a diagram further illustrating the first configuration example of the harmonic processing circuit according to the second embodiment, which schematically shows a cross-sectional view of the essential parts of another example of the harmonic processing circuit. As shown in FIG. 7, a dielectric film 280 may be further provided on the surface 230a of the dielectric film 230 of the harmonic processing circuit 200 shown in FIG. 6(B) to cover the wiring 240 (and the transmission line 260) provided on the surface 230a. The dielectric film 280 is made of a dielectric material containing one or more materials selected from the group consisting of Si-containing materials such as SiN, Al-containing materials such as AlN, Mg-containing materials such as MgO, and Ti-containing materials such as BaTiO3 (barium titanate). The dielectric film 280 may have a single-layer structure of one type of dielectric material, or may have a laminate structure of one or more types of dielectric materials. The provision of the dielectric film 280 to cover the wiring 240 (and the transmission line 260) makes it possible to suppress the electric field generated in the wiring 240 (and the transmission line 260) from diverging to the outside.

[0074] In the harmonic processing circuit 200 of the first configuration example, the wiring 240 is also referred to as the "first wiring," the wiring 250 is also referred to as the "second wiring," and the part 231 of the dielectric film 230 interposed between the wiring 240 and the wiring 250 is also referred to as the "first dielectric film." Furthermore, the dielectric film 220 is also referred to as the "second dielectric film," the dielectric film 230 is also referred to as the "third dielectric film," and the dielectric film 280 is also referred to as the "fourth dielectric film."

[0075] (Second configuration example) 8A and 8B are diagrams illustrating a second configuration example of a harmonic processing circuit according to the second embodiment. Fig. 8A is a schematic plan view of a main part of the harmonic processing circuit. Fig. 8B is a schematic cross-sectional view of a main part of the harmonic processing circuit. Fig. 8B is a schematic cross-sectional view taken along line VIII-VIII of Fig. 8A.

[0076] 8(A) and 8(B) is an example of the harmonic processing circuit 40, etc. Harmonic processing circuit 300 includes a conductor layer 310, a dielectric film 320, a dielectric film 330, a wiring 340, and a wiring 350.

[0077] Various conductive materials can be used for the conductor layer 310. For example, the conductor layer 310 can be made of a conductive material containing one or more selected from Cu, Al, Ag, Au, Mo, Pd, Ni, and Pt. The conductor layer 310 can be a single-layer structure made of one type of conductive material, or a laminate structure made of one or more types of conductive materials. Any element or conductive material can be used for the conductor layer 310 as long as it provides a certain level of thermal conductivity and electrical conductivity. As an example, the conductor layer 310 can be made of a metal layer mainly made of Cu with Au plating on the surface. For example, the conductor layer 310 is set to a ground potential.

[0078] As shown in Fig. 8(B), the dielectric film 320 is provided on the surface 310a of the conductor layer 310. Various dielectric materials are used for the dielectric film 320. For example, the dielectric film 320 may be made of a dielectric material containing one or more selected from the group consisting of resin, SiN, SiO, AlN, AlO, AlSiO, AlON, and MgO. The dielectric film 320 may have a single layer structure made of one type of dielectric material, or may have a laminate structure made of one or more types of dielectric materials.

[0079] As shown in FIG. 8A, the wiring 340 is an open stub, having one end 341 connected to a transmission line 360 ​​for transmitting a fundamental wave and the other end 342 open. The transmission line 360 ​​is an example of the transmission line 30 described in the first embodiment. The wiring 340 and its one end 341 and its other end 342 are examples of the wiring 41 and its one end 41a and other end 41b described in the first embodiment, respectively. As shown in FIGS. 8A and 8B, the wiring 340 and the transmission line 360 ​​are provided on a surface 320a of the dielectric film 320 opposite to the conductor layer 310 side.

[0080] 8(A), the wiring 350 is a wiring whose both ends, i.e., one end 351 and the other end 352, are open. The wiring 350 is provided parallel to and spaced apart from the wiring 340. The wiring 350 and its one end 351 and the other end 352 are examples of the wiring 42 and its one end 42a and the other end 42b described in the first embodiment, respectively. As shown in FIGS. 8(A) and 8(B), the wiring 350 is provided together with the wiring 340 on the surface 320a of the dielectric film 320 opposite the conductor layer 310 side.

[0081] Various conductive materials are used for the wiring 340 and the wiring 350. For example, the wiring 340 and the wiring 350 can each be made of a conductive material containing one or more selected from Cu, Al, Ag, Au, Mo, Ni, Pt, Ti, and W. The wiring 340 and the wiring 350 can each have a single-layer structure of one type of conductive material, or a laminate structure of one or more types of conductive materials. The wiring 340 and the wiring 350 can each be made of any element or conductive material as long as it has at least a certain level of thermal conductivity and electrical conductivity.

[0082] As shown in FIGS. 8A and 8B, the dielectric film 330 is provided on the surface 320a of the dielectric film 320, between the wiring 340 and the wiring 350. The dielectric film 330 may be made of various dielectric materials. For example, the dielectric film 330 may be made of a dielectric material containing one or more selected from the group consisting of resin, SiN, SiO, AlN, AlO, AlSiO, AlON, and MgO. The dielectric film 330 may have a single-layer structure of one dielectric material or a laminate structure of one or more dielectric materials. The dielectric film 330 may be made of the same dielectric material as the dielectric film 320, or may be made of a different dielectric material from the dielectric film 320. For example, the dielectric films 320 and 330 may be made of dielectric materials having the same dielectric constant or different dielectric constants.

[0083] Capacitive coupling 370 (FIG. 8B) is realized by the wiring 340, the wiring 350, and the dielectric film 330 interposed therebetween. The dielectric film 330 functions as the dielectric film 43 described in the first embodiment.

[0084] The harmonic processing circuit 300 is realized, for example, in the form of a microstrip line. As described in the first embodiment, the dimensions (length and width) of the wiring 340 and wiring 350 are set based on the fundamental wave and the harmonics to be shorted. The width of the dielectric film 330 interposed between the wiring 340 and wiring 350, i.e., the spacing between the wiring 340 and wiring 350, is set based on the material (dielectric constant) of the dielectric film 330. The thickness of the dielectric film 320 between the wiring 340 and wiring 350 and the conductor layer 310 is set based on the material (dielectric constant) of the dielectric film 320 and the characteristic impedance. In the harmonic processing circuit 300, the material of the conductor layer 310, the materials and dimensions of the dielectric films 320 and 330, and the materials and dimensions of the wiring 340 and wiring 350 are appropriately selected so that the harmonics to be shorted can be shorted by the capacitive coupling 370.

[0085] In harmonic processing circuit 300, the spacing between wiring 340 and wiring 350 and the material (its relative dielectric constant) of dielectric film 330 interposed between wiring 340 and wiring 350 are selected appropriately. Furthermore, as will be described later ( FIG. 9(B) ), the material (its relative dielectric constant) of dielectric film 380, part 381 of which is interposed between wiring 340 and wiring 350, is selected appropriately. As a result, in harmonic processing circuit 300, the capacitance value between wiring 340 and wiring 350 can be adjusted to an appropriate value with high precision, compared to when a gap (air gap) is formed between wiring 340 and wiring 350.

[0086] The harmonic processing circuit 300 may be mounted on another component by joining the conductor layer 310 to the other component using a joining material such as solder or resin. Furthermore, the harmonic processing circuit 300 may be a double-sided printed circuit board in which wiring 340 and wiring 350 and a dielectric film 330 between them are provided on one surface 320a of a dielectric film 320 made of resin or the like, and a conductor layer 310 is provided on the other surface opposite the one surface.

[0087] Furthermore, in harmonic processing circuit 300, conductor layer 310 may be a conductor layer provided on one surface of a single-sided or double-sided printed circuit board. Dielectric film 320 may be provided on surface 310a of conductor layer 310 provided on such a printed circuit board, and wiring 340, wiring 350, and dielectric film 330 may be provided on surface 320a of dielectric film 320.

[0088] 9A and 9B are diagrams further illustrating a second configuration example of the harmonic processing circuit according to the second embodiment. Each of Fig. 9A and Fig. 9B is a schematic cross-sectional view of a main part of another example of the harmonic processing circuit.

[0089] As shown in FIG. 9A, a dielectric film 380 may be further provided on the surface 320a of the dielectric film 320 of the harmonic processing circuit 300 shown in FIG. 8B to cover the wiring 340, wiring 350, and dielectric film 330 (and transmission line 360) provided on the surface 320a. The dielectric film 380 is made of a dielectric material containing one or more materials selected from the group consisting of Si-containing materials such as SiN, Al-containing materials such as AlN, Mg-containing materials such as MgO, and Ti-containing materials such as BaTiO. The dielectric film 380 may have a single-layer structure made of one type of dielectric material, or may have a laminate structure made of one or more types of dielectric materials. The provision of the dielectric film 380 to cover the wiring 340, wiring 350, and dielectric film 330 (and transmission line 360) makes it possible to suppress the electric field generated in the wiring 340 (and transmission line 360) from diverging to the outside.

[0090] 9(B), a dielectric film 380 covering the wirings 340 and 350 (and the transmission line 360) may be further provided on a surface 320a of the dielectric film 320 on which the wirings 340 and 350 (and the transmission line 360) are provided and on which the dielectric film 330 is omitted. In this case, a portion 381 of the dielectric film 380 provided between the wirings 340 and 350 has the same function as the dielectric film 330. Capacitive coupling 370 is realized by the wirings 340 and 350 and the portion 381 of the dielectric film 380 interposed therebetween.

[0091] In the harmonic processing circuit 300 of the second configuration example, the wiring 340 is also referred to as the "first wiring," the wiring 350 is also referred to as the "second wiring," and the dielectric film 330 or part 381 of the dielectric film 380 interposed between the wiring 340 and the wiring 350 is also referred to as the "first dielectric film." Furthermore, the dielectric film 320 is also referred to as the "second dielectric film," and the dielectric film 380 is also referred to as the "third dielectric film."

[0092] (Third configuration example) 10A and 10B are diagrams illustrating a third configuration example of the harmonic processing circuit according to the second embodiment. Fig. 10A is a schematic plan view of the main parts of the harmonic processing circuit. Fig. 10B is a schematic cross-sectional view of the main parts of the harmonic processing circuit. Fig. 10B is a schematic cross-sectional view taken along line XX in Fig. 10A.

[0093] 10(A) and 10(B) is an example of the harmonic processing circuit 40 etc. Harmonic processing circuit 400 includes a conductor layer 410, a dielectric film 420, a dielectric film 430, a wiring 440 and a wiring 450.

[0094] Various conductive materials can be used for the conductor layer 410. For example, the conductor layer 410 can be made of a conductive material containing one or more selected from Cu, Al, Ag, Au, Mo, Pd, Ni, and Pt. The conductor layer 410 can have a single-layer structure of one type of conductive material, or a laminate structure of one or more types of conductive materials. Any element or conductive material can be used for the conductor layer 410 as long as it has a certain level of thermal conductivity and electrical conductivity. As an example, the conductor layer 410 can be made of a metal layer mainly composed of Cu with Au plating on the surface. For example, the conductor layer 410 is set to a ground potential.

[0095] As shown in FIG. 10(B), the dielectric film 420 is provided on a surface 410a of the conductor layer 410. The dielectric film 430 is provided on a surface 420a of the dielectric film 420 opposite the conductor layer 410. Various dielectric materials are used for the dielectric films 420 and 430. For example, the dielectric films 420 and 430 each use a dielectric material containing one or more selected from the group consisting of resin, SiN, SiO, AlN, AlO, AlSiO, AlON, and MgO. The dielectric films 420 and 430 each may have a single-layer structure made of one type of dielectric material or a laminate structure made of one or more types of dielectric materials. The dielectric films 420 and 430 may use the same type of dielectric material or different types of dielectric materials. For example, the dielectric film 420 and the dielectric film 430 may be made of dielectric materials having the same relative dielectric constant, or may be made of dielectric materials having different relative dielectric constants.

[0096] 10(A), the wiring 440 is an open stub, having one end 441 connected to a transmission line 460 for transmitting a fundamental wave and the other end 442 open. The transmission line 460 is an example of the transmission line 30 described in the first embodiment. The wiring 440 and its one end 441 and its other end 442 are examples of the wiring 41 and its one end 41a and other end 41b described in the first embodiment, respectively. As shown in FIGS. 10(A) and 10(B), the wiring 440 and the transmission line 460 are provided on a surface 420a of the dielectric film 420 opposite to the conductor layer 410 side, and are covered with a dielectric film 430.

[0097] 10(A), the wiring 450 is a wiring whose both ends, i.e., one end 451 and the other end 452, are both open. The wiring 450 is provided parallel to and spaced apart from the wiring 440. The wiring 450 and its one end 451 and its other end 452 are examples of the wiring 42 and its one end 42a and its other end 42b, respectively, described in the first embodiment. As shown in FIGS. 10(A) and 10(B), the wiring 450 is provided on a surface 430a of the dielectric film 430 opposite to the dielectric film 420 side.

[0098] 10(A) and 10(B), the wiring 440 and the wiring 450 are provided so as to partially overlap each other in plan view and cross-sectional view. Capacitive coupling 470 (FIG. 10(B)) is realized by the overlapping portions of the wiring 440 and the wiring 450 and a portion 431 of the dielectric film 430 interposed therebetween. The portion 431 of the dielectric film 430 interposed between the overlapping wiring 440 and the wiring 450 functions as the dielectric film 43 described in the first embodiment.

[0099] Various conductive materials are used for the wiring 440 and the wiring 450. For example, the wiring 440 and the wiring 450 can each be made of a conductive material containing one or more selected from Cu, Al, Ag, Au, Mo, Ni, Pt, Ti, and W. The wiring 440 and the wiring 450 can each have a single-layer structure of one type of conductive material, or a laminate structure of one or more types of conductive materials. The wiring 440 and the wiring 450 can each be made of any element or conductive material as long as it has at least a certain level of thermal conductivity and electrical conductivity.

[0100] The harmonic processing circuit 400 is realized, for example, in the form of a microstrip line. As described in the first embodiment, the dimensions (length and width) of the wiring 440 and the wiring 450 are set based on the fundamental wave and the harmonic to be short-circuited. The thickness of the dielectric film 430 interposed between the wiring 440 and the wiring 450, i.e., the spacing of the overlapping portions of the wiring 440 and the wiring 450, is set based on the material (dielectric constant) of the dielectric film 430. The thicknesses of the dielectric film 430 and the dielectric film 420 between the wiring 450 and the conductor layer 410, and the thickness of the dielectric film 420 between the wiring 440 and the conductor layer 410, are set based on the material (dielectric constant) of the dielectric film 430 and the dielectric film 420 and the characteristic impedance of the dielectric film 430 and the dielectric film 420. In the harmonic processing circuit 400, the material of the conductor layer 410, the materials and dimensions of the dielectric films 420 and 430, and the materials and dimensions of the wiring 440 and wiring 450 are appropriately selected so that the harmonics to be short-circuited can be short-circuited by the capacitive coupling 470.

[0101] In harmonic processing circuit 400, the spacing of the overlapping portion between wiring 440 and wiring 450 and the material (its relative dielectric constant) of dielectric film 430, part 431 of which is interposed between wiring 440 and wiring 450, are selected appropriately. As a result, in harmonic processing circuit 400, the capacitance value between wiring 440 and wiring 450 can be adjusted to an appropriate value with high precision, compared to when a gap (air gap) is formed between wiring 440 and wiring 450.

[0102] In harmonic processing circuit 400, wiring 440 and transmission line 460 are covered with dielectric film 430. This prevents the electric field generated in wiring 440 and transmission line 460 from diverging to the outside. Furthermore, in harmonic processing circuit 400, only one of dielectric films 420 and 430, dielectric film 420, is provided between wiring 440 and transmission line 460 and conductor layer 410. This makes it possible to reduce the distance between wiring 440 and transmission line 460 and conductor layer 410 compared to the harmonic processing circuit 200 (FIGS. 6(A) and 6(B)). This prevents the electric field from diverging from wiring 440 and transmission line 460 toward conductor layer 410.

[0103] Incidentally, harmonic processing circuit 400 may be mounted on another component by joining conductor layer 410 to the other component using a joining material such as solder or resin. Furthermore, a double-sided printed circuit board may be used for the layered structure of conductor layer 410, dielectric film 420, wiring 440, and transmission line 460 in harmonic processing circuit 400. That is, harmonic processing circuit 400 may use a double-sided printed circuit board in which wiring 440 and transmission line 460 are provided on one surface 420a of dielectric film 420 made of resin or the like, and conductor layer 410 is provided on the other surface on the opposite side. In such a double-sided printed circuit board, a dielectric film 430 that covers wiring 440 and transmission line 460 may be provided on surface 420a of dielectric film 420, and wiring 450 may be provided on surface 430a of dielectric film 430.

[0104] Furthermore, conductor layer 410 in harmonic processing circuit 400 may be a conductor layer provided on one surface of a single-sided or double-sided printed circuit board. Dielectric film 420 may be provided on surface 410a of conductor layer 410 provided on such a printed circuit board, wiring 440, transmission line 460, and dielectric film 430 may be provided on surface 420a of dielectric film 420, and wiring 450 may be provided on surface 430a of dielectric film 430.

[0105] Fig. 11 is a diagram further illustrating a third configuration example of the harmonic processing circuit according to the second embodiment, which schematically shows a cross-sectional view of a main part of another example of the harmonic processing circuit. As shown in FIG. 11, a dielectric film 480 may be further provided on the surface 430a of the dielectric film 430 of the harmonic processing circuit 400 shown in FIG. 10(B) to cover the wiring 450 provided on the surface 430a. The dielectric film 480 is made of a dielectric material containing one or more materials selected from the group consisting of Si-containing materials such as SiN, Al-containing materials such as AlN, Mg-containing materials such as MgO, and Ti-containing materials such as BaTiO. The dielectric film 480 may have a single-layer structure of one type of dielectric material, or may have a laminate structure of one or more types of dielectric materials. The provision of the dielectric film 480 to cover the wiring 450 further suppresses the external divergence of the electric field generated in the wiring 440 and the transmission line 460.

[0106] In addition, with regard to harmonic processing circuit 400 of the third configuration example, wiring 440 is also referred to as the "first wiring," wiring 450 is also referred to as the "second wiring," and part 431 of dielectric film 430 interposed between wiring 240 and wiring 250 is also referred to as the "first dielectric film." Furthermore, dielectric film 420 is also referred to as the "second dielectric film," dielectric film 430 is also referred to as the "third dielectric film," and dielectric film 480 is also referred to as the "fourth dielectric film."

[0107] [Third embodiment] Here, a configuration example of the amplifier 1 etc. will be described as a third embodiment. Fig. 12 is a diagram illustrating an example of the configuration of an amplifier according to the third embodiment, which diagrammatically shows a plan view of the essential parts of an example of the amplifier.

[0108] The amplifier 500 shown in FIG. 12 includes a semiconductor component 510, an input-side component 520, and an output-side component 530. The semiconductor component 510 includes a substrate 511 , a gate electrode 512 , a source electrode 513 and a drain electrode 514 .

[0109] For example, the substrate 511 includes a layer using a GaN-based nitride semiconductor. As an example, if the semiconductor component 510 includes a HEMT, the substrate 511 has a nitride semiconductor layer structure including an electron transit layer using GaN or the like and an electron supply layer using AlGaN or the like, which has a wider band gap than GaN or the like. In this case, a two-dimensional electron gas (2DEG) region is generated in the electron transit layer that is layered on the electron supply layer.

[0110] A gate electrode 512, a source electrode 513, and a drain electrode 514, each made of a predetermined metal, are provided on such a substrate 511. For example, the gate electrode 512 and the drain electrode 514 are each comb-shaped. For example, the source electrode 513 is island-shaped. The source electrode 513 is extended to the rear surface of the substrate 511 (the depth side of the paper) and grounded. The comb teeth of the gate electrode 512 are disposed between a pair of the island of the source electrode 513 and the comb teeth of the drain electrode 514. A transistor 510a, as an example a HEMT, is formed in a region where the comb teeth of the gate electrode 512 and the islands of the source electrode 513 and the comb teeth of the drain electrode 514 on both sides of the comb teeth of the gate electrode 512 are provided.

[0111] The input-side component 520 is an example of a component that includes an input-side matching circuit 520a. The input-side matching circuit 520a includes a transmission line 521. One end of the transmission line 521 is connected to a terminal (not shown) on the power supply side by a wire 540 or the like, and the other end is connected to a gate electrode 512 of a transistor 510a of the semiconductor component 510 by a wire 541 or the like. A signal is input from the power supply side to the gate electrode 512 of the transistor 510a through the transmission line 521. The input-side matching circuit 520a matches the impedance on the power supply side with the impedance on the input side of the transistor 510a to, for example, 50 Ω or thereabouts.

[0112] The transmission line 521 of the input-side matching circuit 520a is shown schematically for convenience, and its shape is not limited to that shown in the figure. Various shapes can be adopted for the transmission line 521 as long as they can match the impedance on the power supply side with the impedance on the input side of the transistor 510a.

[0113] Output-side component 530 is an example of a component that includes harmonic processing circuit 530a and output-side matching circuit 530b. For example, output-side component 530 is formed as a single component that integrates harmonic processing circuit 530a and output-side matching circuit 530b. For convenience, the following example illustrates a case in which harmonic processing circuit 530a includes something like harmonic processing circuit 300 (FIGS. 8A and 8B) of the second configuration example described in the second embodiment.

[0114] The output-side component 530 includes a dielectric film 531 provided on a conductor layer (not shown). The harmonic processing circuit 530a includes a transmission line 532, wiring 533, wiring 534, and dielectric film 535 provided on the dielectric film 531. One end of the transmission line 532 is connected to a drain electrode 514 of a transistor 510a of the semiconductor component 510 via a wire 542 or the like. The wiring 533 is an open stub with one end connected to the transmission line 532. The wiring 534 has both ends open and is provided parallel to and spaced apart from the wiring 533. The wiring 533 and wiring 534 are both set to a length equal to a quarter wavelength of the harmonic to be short-circuited by the harmonic processing circuit 530a. The dielectric film 535 is provided between the wiring 533 and wiring 534.

[0115] The conductor layer and the dielectric film 531 provided thereon correspond to the conductor layer 310 and dielectric film 320 of the harmonic processing circuit 300 (FIGS. 8(A) and 8(B)). The transmission line 532 corresponds to the transmission line 360 ​​of the harmonic processing circuit 300 (FIGS. 8(A) and 8(B)). The wiring 533 corresponds to the wiring 340 of the harmonic processing circuit 300 (FIGS. 8(A) and 8(B)). The wiring 534 corresponds to the wiring 350 of the harmonic processing circuit 300 (FIGS. 8(A) and 8(B)). The dielectric film 535 corresponds to the dielectric film 330 of the harmonic processing circuit 300 (FIGS. 8(A) and 8(B)).

[0116] Harmonic processing circuit 530a shorts out predetermined harmonics of the signal output from drain electrode 514 of transistor 510a. Harmonic processing circuit 530a transmits the signal output from drain electrode 514, from which predetermined harmonics have been shorted, to output-side matching circuit 530b.

[0117] Output-side matching circuit 530b includes transmission line 536 provided on dielectric film 531. One end of transmission line 536 of output-side matching circuit 530b is connected to transmission line 532 of harmonic processing circuit 530a, and the other end is connected to a terminal on the load side (not shown) via wire 543 or the like. For example, transmission line 536 of output-side matching circuit 530b is a transmission line continuous with transmission line 532 of harmonic processing circuit 530a. A signal in which a predetermined harmonic has been short-circuited is transmitted to transmission line 536 of output-side matching circuit 530b via transmission line 532 of harmonic processing circuit 530a. Output-side matching circuit 530b matches the impedance on the load side with the impedance on the output side of transistor 510a, including harmonic processing circuit 530a, to, for example, 50 Ω or thereabouts.

[0118] Note that transmission line 536 of output-side matching circuit 530b is shown schematically for convenience, and its shape is not limited to that shown. Various shapes can be adopted for transmission line 536 as long as they can match the impedance on the load side with the impedance on the output side of transistor 510a including harmonic processing circuit 530a.

[0119] Furthermore, a dielectric film (FIGS. 9(A) and 9(B)) may be further provided on the dielectric film 531 of the output-side component 530 to cover the transmission line 532, wiring 533, wiring 534 and dielectric film 535 of the harmonic processing circuit 530a, and the transmission line 536 of the output-side matching circuit 530b.

[0120] The amplifier 500 having the configuration shown in FIG. 12 realizes the function of the amplifier 1 shown in FIG. 12 illustrates an example of output-side component 530 as a single component in which harmonic processing circuit 530a and output-side matching circuit 530b are integrated. Alternatively, a component including harmonic processing circuit 530a and a component including output-side matching circuit 530b may be prepared as separate components. In this case, transmission line 532 of the component including harmonic processing circuit 530a and transmission line 536 of the component including output-side matching circuit 530b are connected by a wire or the like.

[0121] 12 shows an example in which harmonic processing circuit 530a includes something like harmonic processing circuit 300 of the second configuration example described in the second embodiment (FIGS. 8A and 8B). Alternatively, something like harmonic processing circuit 200 of the first configuration example described in the second embodiment (FIGS. 6A and 6B) or harmonic processing circuit 400 of the third configuration example (FIGS. 10A and 10B) may be used in place of harmonic processing circuit 530a shown above.

[0122] Furthermore, instead of the above-described harmonic processing circuit 530a, a harmonic processing circuit configured to short-circuit two or more types of harmonics may be used. The harmonic processing circuit may be integrated with output matching circuit 530b in a single component, or may be provided as a component separate from the component including output matching circuit 530b. Such a configuration realizes, for example, the function of amplifier 1A shown in FIG. 4.

[0123] Furthermore, a harmonic processing circuit for shorting one or more types of harmonics may be used in input-side component 520. The harmonic processing circuit is connected to a transmission line. One end of the transmission line included in the harmonic processing circuit or the transmission line to which the harmonic processing circuit is connected is connected to transmission line 521 of input-side matching circuit 520a, and the other end is connected to gate electrode 512 of transistor 510a via wire 541 or the like. The harmonic processing circuit may be integrated into a single component together with input-side matching circuit 520a, or may be prepared as a component separate from the component including input-side matching circuit 520a. This configuration, for example, realizes the function of amplifier 1B as shown in FIG. 5 above.

[0124] 13A and 13B are diagrams illustrating an example of a simulation result for the amplifier according to the third embodiment. Fig. 13A shows an example of a simulation result for a capacitance value. Fig. 13B shows an example of a simulation result for a return loss (S11 loss or return loss).

[0125] Here, the simulation model used is an amplifier 1 having the configuration shown in FIG. 2 above, with harmonic processing circuit 300 (FIGS. 8A and 8B) of the second configuration example described in the second embodiment above as its harmonic processing circuit 40. This model of amplifier 1 will be referred to below as "Model P" or simply as "P." This model P can also be said to be a model of amplifier 500 shown in FIG. 12 above.

[0126] Furthermore, as a simulation model for comparison, a model of amplifier 100 having the configuration shown in Fig. 1 above and equipped with one open stub 141 as its harmonic processing circuit 140 was used. Such a model of amplifier 100 will hereinafter be referred to as "Model Q" or simply "Q".

[0127] In the simulation, the frequency f1 of the fundamental wave was set to 3.6 GHz. Both harmonic processing circuit 40 (or harmonic processing circuit 300) of model P and harmonic processing circuit 140 of model Q were set to dimensions that would short-circuit the second harmonic of the fundamental wave. That is, in model Q, open stub 141 was set to a length L2 of 1 / 4 wavelength (λ2 / 4) of the second harmonic, and its width W0 was set to 0.47 mm. In model P, wiring 41 and wiring 42 (or wiring 340 and wiring 350) were set to a length L2 of 1 / 4 wavelength (λ2 / 4) of the second harmonic, and their width W2 was set to 0.235 mm, which is half the width W0 of open stub 141.

[0128] As shown in FIG. 13A, in models P and Q, the capacitance values ​​tend to diverge and short-circuit as the frequency approaches twice the fundamental frequency f1. As shown in FIG. 13A, at the fundamental frequency f1, the capacitance value of model P is 0.59 pF, while the capacitance value of model Q is 0.87 pF. At the fundamental frequency f1, the capacitance value of model P is lower than that of model Q. As shown in FIG. 13A, this reduced capacitance results in a wider frequency band in model P. Therefore, it can be said that amplifier 1 equipped with harmonic processing circuit 40 (or harmonic processing circuit 300) such as model P has reduced parasitic capacitance and thus reduced frequency band narrowing due to parasitic capacitance compared to amplifier 100 equipped with harmonic processing circuit 140 such as model Q.

[0129] 13(B), at the fundamental frequency f1, the return loss of model P is −0.11 dB, while the return loss of model Q is −0.15 dB. At the fundamental frequency f1, the return loss of model P is lower than that of model Q. This reduction in return loss of model P compared to model Q is equivalent to a 1% improvement in PAE. Therefore, it can be said that amplifier 1 equipped with harmonic processing circuit 40 (or harmonic processing circuit 300) such as model P has lower return loss and thus less reduction in PAE due to return loss than amplifier 100 equipped with harmonic processing circuit 140 such as model Q.

[0130] Amplifier 1 equipped with harmonic processing circuit 40 (or harmonic processing circuit 300) can suppress the occurrence of parasitic capacitance associated with harmonic processing (short circuit), and can suppress a reduction in frequency band and a decrease in PAE due to loss caused by parasitic capacitance.

[0131] The following additional notes are provided regarding the above-described embodiment. (Appendix 1) A transmission line for transmitting a fundamental wave; a first wiring having one end connected to the transmission line and the other end open, the length between the one end and the other end being ¼ wavelength of a predetermined harmonic of the fundamental wave; a second wiring that is provided in parallel to the first wiring and spaced apart from the first wiring, has both ends open, and has a length between the ends that is ¼ wavelength of the predetermined harmonic; a first dielectric film interposed between the first wiring and the second wiring; a harmonic processing circuit including:

[0132] (Supplementary Note 2) The harmonic processing circuit according to Supplementary Note 1, wherein the predetermined harmonic is a second harmonic. (Supplementary Note 3) A conductor layer; a second dielectric film provided on the first surface of the conductor layer; a third dielectric film provided on a second surface of the second dielectric film opposite to the conductor layer side; Including, the first wiring is provided on a third surface of the third dielectric film opposite to the second dielectric film side, the second wiring is provided on the second surface of the second dielectric film and is covered with the third dielectric film; 2. The harmonic processing circuit of claim 1, wherein the first dielectric film is part of the third dielectric film.

[0133] (Appendix 4) The harmonic processing circuit according to appendix 3, wherein different types of materials are used for the second dielectric film and the third dielectric film. (Appendix 5) The harmonic processing circuit according to appendix 3, wherein the second dielectric film and the third dielectric film are made of the same material.

[0134] (Supplementary Note 6) The harmonic processing circuit according to Supplementary Note 3, further comprising a fourth dielectric film provided on the third surface of the third dielectric film and covering the first wiring. (Supplementary Note 7) The harmonic processing circuit according to Supplementary Note 3, wherein the first wiring and the second wiring at least partially overlap in a plan view.

[0135] (Supplementary Note 8) A conductor layer; a second dielectric film provided on the first surface of the conductor layer; Including, the first wiring and the second wiring are provided on a second surface of the second dielectric film opposite to the conductor layer side, 2. The harmonic processing circuit according to claim 1, wherein the first dielectric film is provided on the second surface of the second dielectric film between the first wiring and the second wiring.

[0136] (Appendix 9) The harmonic processing circuit according to appendix 8, wherein different types of materials are used for the first dielectric film and the second dielectric film. (Appendix 10) The harmonic processing circuit according to appendix 8, wherein the first dielectric film and the second dielectric film are made of the same material.

[0137] (Appendix 11) The harmonic processing circuit according to appendix 8, further comprising a third dielectric film provided on the second surface of the second dielectric film and covering the first wiring and the second wiring. (Appendix 12) The harmonic processing circuit according to appendix 11, wherein the first dielectric film is a part of the third dielectric film.

[0138] (Supplementary Note 13) A conductor layer; a second dielectric film provided on the first surface of the conductor layer; a third dielectric film provided on a second surface of the second dielectric film opposite to the conductor layer side; Including, the first wiring is provided on the second surface of the second dielectric film and is covered with the third dielectric film; the second wiring is provided on a third surface of the third dielectric film opposite to the second dielectric film side, 2. The harmonic processing circuit of claim 1, wherein the first dielectric film is part of the third dielectric film.

[0139] (Appendix 14) The harmonic processing circuit according to appendix 13, wherein different types of materials are used for the second dielectric film and the third dielectric film. (Appendix 15) The harmonic processing circuit according to appendix 13, wherein the second dielectric film and the third dielectric film are made of the same material.

[0140] (Appendix 16) The harmonic processing circuit according to appendix 13, further comprising a fourth dielectric film provided on the third surface of the third dielectric film and covering the second wiring. (Supplementary Note 17) The harmonic processing circuit according to Supplementary Note 13, wherein the first wiring and the second wiring at least partially overlap in a plan view.

[0141] (Appendix 18) A transistor; a harmonic processing circuit connected to the transistor; Equipped with The harmonic processing circuit includes: a transmission line for transmitting the fundamental wave; a first wiring having one end connected to the transmission line and the other end open, the length between the one end and the other end being ¼ wavelength of a predetermined harmonic of the fundamental wave; a second wiring that is provided in parallel to the first wiring and spaced apart from the first wiring, has both ends open, and has a length between the ends that is ¼ wavelength of the predetermined harmonic; a first dielectric film interposed between the first wiring and the second wiring; an amplifier. [Explanation of symbols]

[0142] 1, 1A, 1B, 100, 500 Amplifier 10, 110, 510a transistors 20, 120, 520a Input matching circuit 30, 130, 260, 360, 460, 521, 532, 536 Transmission lines 40, 40A, 40B, 140, 200, 300, 400, 530a Harmonic Processing Circuit 40a, 40b range 40c capacitor 41, 41A, 41B, 42, 42A, 42B, 240, 250, 340, 350, 440, 450, 533, 534 Wiring 41a, 42a, 241, 251, 341, 351, 441, 451 One end 41b, 42b, 242, 252, 342, 352, 442, 452 other end 43, 43A, 43B, 220, 230, 280, 320, 330, 380, 420, 430, 480, 531, 535 Dielectric films 50, 150, 530b Output matching circuit 141 Open Stub 210, 310, 410 Conductor layers 210a, 220a, 230a, 310a, 320a, 410a, 420a, 430a side 231, 381, 431 some 270, 370, 470 capacitive coupling 510 Semiconductor parts 511 Substrate 512 gate electrode 513 Source electrode 514 Drain electrode 520 Input side parts 530 Output side parts 540, 541, 542, 543 Wires W0, W2, W n , W n+1 width L2, L n , L n+1 length λ2, λ n , λ n+1 wavelength P, Q model

Claims

1. a transmission line for transmitting the fundamental wave; a first wiring having one end connected to the transmission line and the other end open, the length between the one end and the other end being ¼ wavelength of a predetermined harmonic of the fundamental wave; a second wiring that is provided in parallel to the first wiring and spaced apart from the first wiring, has both ends open, and has a length between the ends that is ¼ wavelength of the predetermined harmonic; a first dielectric film interposed between the first wiring and the second wiring; a harmonic processing circuit including:

2. a conductor layer; a second dielectric film provided on the first surface of the conductor layer; a third dielectric film provided on a second surface of the second dielectric film opposite to the conductor layer side; Including, the first wiring is provided on a third surface of the third dielectric film opposite to the second dielectric film side, the second wiring is provided on the second surface of the second dielectric film and is covered with the third dielectric film; 2. The harmonic processing circuit according to claim 1, wherein the first dielectric film is a part of the third dielectric film.

3. 3. The harmonic processing circuit according to claim 2, further comprising a fourth dielectric film provided on the third surface of the third dielectric film and covering the first wiring.

4. a conductor layer; a second dielectric film provided on the first surface of the conductor layer; Including, the first wiring and the second wiring are provided on a second surface of the second dielectric film opposite to the conductor layer side, 2. The harmonic processing circuit according to claim 1, wherein the first dielectric film is provided on the second surface of the second dielectric film between the first wiring and the second wiring.

5. 5. The harmonic processing circuit according to claim 4, further comprising a third dielectric film provided on the second surface of the second dielectric film and covering the first wiring and the second wiring.

6. 6. The harmonic processing circuit according to claim 5, wherein the first dielectric film is a part of the third dielectric film.

7. a conductor layer; a second dielectric film provided on the first surface of the conductor layer; a third dielectric film provided on a second surface of the second dielectric film opposite to the conductor layer side; Including, the first wiring is provided on the second surface of the second dielectric film and is covered with the third dielectric film; the second wiring is provided on a third surface of the third dielectric film opposite to the second dielectric film side, 2. The harmonic processing circuit according to claim 1, wherein the first dielectric film is a part of the third dielectric film.

8. 8. The harmonic processing circuit according to claim 7, further comprising a fourth dielectric film provided on the third surface of the third dielectric film and covering the second wiring.

9. A transistor, a harmonic processing circuit connected to the transistor; Equipped with The harmonic processing circuit includes: a transmission line for transmitting the fundamental wave; a first wiring having one end connected to the transmission line and the other end open, the length between the one end and the other end being ¼ wavelength of a predetermined harmonic of the fundamental wave; a second wiring that is provided in parallel to the first wiring and spaced apart from the first wiring, has both ends open, and has a length between the ends that is ¼ wavelength of the predetermined harmonic; a first dielectric film interposed between the first wiring and the second wiring; an amplifier.

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