Inspection apparatus

Abstract

To accurately measure the surface temperature of an object to be inspected during inspection.SOLUTION: According to the present invention, there is provided an inspection device that inspects an inspection object by bringing an electrode terminal of the inspection object into contact with a conductive contact and electrically connecting a tester and the inspection object, the inspection device including an inspection object support unit that supports the inspection object, an infrared light receiving unit that receives infrared light radiated from the inspection object with at least the inspection object as a temperature measurement target, and a temperature measurement device having a temperature conversion function of performing conversion into a temperature of the temperature measurement target on the basis of the infrared light from the infrared light receiving unit. The inspection object support part has a black body in a peripheral edge region of the inspection object support part or in the vicinity of the peripheral edge.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to an inspection device, and can be applied to, for example, a semiconductor inspection device (hereinafter also referred to as an "inspection device") that inspects the electrical characteristics of a semiconductor integrated circuit (hereinafter also referred to as a "semiconductor device") formed on a semiconductor wafer (hereinafter also simply referred to as a "wafer"). [Background technology]

[0002] During the manufacturing process of semiconductor devices formed on a wafer, it is necessary to inspect whether the electrical characteristics of the semiconductor device meet predetermined values, and a semiconductor inspection device equipped with a probe card is used for this inspection.

[0003] For example, a probe card having multiple probes is connected to a test head, and the probes are brought into contact with the terminals of the semiconductor devices on the wafer. A tester then applies test signals to each semiconductor device on the wafer via the probes, and acquires the signals in response from each semiconductor device, thereby testing the electrical characteristics of the semiconductor devices.

[0004] In recent years, there has been a demand to inspect whether the electrical characteristics of semiconductor devices meet predetermined values ​​even under specified temperature environments, and it is therefore necessary to measure the surface temperature of the wafer (semiconductor device) during inspection accurately and with precision.

[0005] BACKGROUND ART Conventionally, a temperature measuring device for measuring the surface temperature of a wafer is disclosed in Patent Document 1, which uses an infrared sensor to measure the amount of infrared radiation emitted by the wafer (see Patent Document 1).

[0006] Here, the temperature measurement device must be calibrated using the emissivity of a blackbody. Conventional methods for calibrating a temperature measurement device involve, for example, removing the temperature measurement device from the prober and calibrating it using the radiation temperature of a blackbody furnace or the like as a reference. Alternatively, for example, a wafer-shaped blackbody is placed on the chuck of the prober, and changes in the measured value of the infrared radiation amount are monitored to confirm that the measured value is within a certain range. If the measured value is outside the certain range, the accuracy is checked again using the wafer-shaped blackbody, and recalibration is performed if necessary. In this way, the temperature of the wafer is measured non-contact using an infrared sensor. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2001-56253 Summary of the Invention [Problem to be solved by the invention]

[0008] However, when the surface temperature of a wafer (semiconductor device) under inspection is measured using a non-contact temperature sensor, the semiconductor device generates heat when an operating current is applied to the semiconductor device, and the heat is then transferred to the electrical signal probe that contacts the terminals of the semiconductor device, making the temperature of the semiconductor device change and difficult to stabilize.

[0009] Therefore, when attempting to accurately measure the surface temperature of a wafer under inspection using a conventional temperature measurement device, the following problems arise.

[0010] Infrared rays generated from the surface of the semiconductor device are transmitted to the temperature measuring device via an optical path formed by optical fibers, a lens barrel, lenses, etc., but the transmittance can deteriorate depending on the fitting condition or deterioration of the optical path components, which can affect the measurement accuracy.

[0011] Furthermore, if the temperature of the optical path itself rises, infrared rays will be generated from the optical path itself, and there is a risk that the optical path will be affected by the infrared rays.

[0012] Furthermore, there is a problem in that the amount of infrared radiation from the wafer changes depending on the color, roughness, and other conditions of the surface of the wafer being measured.

[0013] Furthermore, when the distance from the light receiving part (fiber tip, etc.) of the optical fiber to the semiconductor device being measured changes, the incident angle of the infrared light to the light receiving part changes, which causes a problem of changing the amount of incident light.

[0014] SUMMARY OF THE INVENTION In view of the above-mentioned problems, the present invention provides an inspection apparatus that can accurately measure the surface temperature of a wafer during inspection. [Means for solving the problem]

[0015] In order to solve such problems, the present invention provides an inspection device that inspects an object under test by bringing the electrode terminals of the object under test into contact with conductive contacts to electrically connect the tester and the object under test, and is characterized in that it comprises: (1) an object under test support part that supports the object under test; (2) an infrared receiving part that receives infrared rays emitted by at least the object under test as an object of temperature measurement, and (3) a temperature measuring device that has a temperature conversion function that converts the infrared rays from the infrared receiving part into the temperature of the object of temperature measurement, and (4) the object under test support part has a black body in the peripheral region or near the periphery of the object under test support part. [Effects of the Invention]

[0016] According to the present invention, it is possible to efficiently calibrate non-contact thermometers that are transported into an inspection device and measure the surface temperature of an object under inspection or a mounting table on which the object under inspection is placed. [Brief explanation of the drawings]

[0017] [Figure 1] 1 is an overall configuration diagram showing the overall configuration of an inspection device according to a first embodiment. [Figure 2] 1 is a plan view showing the configuration of a test object mounting stage according to a first embodiment in a plan view. [Figure 3] 5 is a flowchart (part 1) showing the operation of the calibration process of the temperature measuring device of the inspection apparatus according to the first embodiment. [Figure 4] FIG. 3 is an explanatory diagram illustrating the movement of the position of a black body in the first embodiment. [Figure 5] 10 is a flowchart (part 2) showing the operation of the calibration process of the temperature measuring device of the inspection apparatus according to the first embodiment. [Figure 6] FIG. 10 is a diagram showing the overall configuration of an inspection device according to a second embodiment. [Figure 7] FIG. 10 is an explanatory diagram illustrating distance measurement by a length measuring device according to a second embodiment. [Figure 8] 10 is a flowchart showing the operation of a calibration process of the temperature measuring device of the inspection apparatus according to the second embodiment. [Figure 9] FIG. 10 is a diagram showing the relationship between the distance between the wafer surface and the infrared receiving unit and the corrected temperature in the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0018] (A) First embodiment A first embodiment of an inspection device according to the present invention will be described in detail below with reference to the drawings.

[0019] In the drawings relating to the embodiments, the same reference numerals are used to denote equivalent parts. However, it should be noted that the drawings are schematic, and the thickness ratios of the components may differ from those in reality. Furthermore, the drawings may include parts with different dimensional relationships and ratios. The embodiments are intended to exemplify devices and methods for embodying the technical ideas of the present invention, and are not intended to limit the materials, shapes, structures, arrangements, etc. of the components to those described in the embodiments.

[0020] (A-1) Configuration of the First Embodiment (A-1-1) Overall composition FIG. 1 is a diagram showing the overall configuration of an inspection device according to the first embodiment.

[0021] In FIG. 1, the inspection device 1 according to the first embodiment includes a temperature measuring device 10, a prober 50, and a test head 13.

[0022] The prober 50 includes a chuck 40 on which the wafer 20 is placed and which has a temperature adjusting function for adjusting the temperature of the wafer 20 to a high or low temperature, a θ-axis stage 51, a Z-axis stage 52, a Y-axis stage 53, and an X-axis stage .

[0023] The inspection device 1 inspects the electrical characteristics of each semiconductor device (hereinafter also referred to as "device under test") formed on a wafer 20. In the inspection device 1, a probe card 14 is electrically connected to a second surface (e.g., the lower surface) of a test head 13 via an electrical connection unit 18.

[0024] During testing, electrode terminals of the semiconductor device 17 are electrically contacted with each probe 17 of the probe card 14. Then, the testing device 1 applies an electrical signal from the tester to each semiconductor device on the wafer 20 via the probe, and acquires a signal in response from each semiconductor device. In this way, the tester tests the characteristics of the semiconductor device.

[0025] The temperature measuring device 10 is connected to an optical fiber 12 which is connected to an infrared receiving unit 16. The infrared receiving unit 16 receives infrared rays emitted by an object whose temperature is to be measured (hereinafter also simply referred to as the "object to be measured"), and the temperature measuring device 10 acquires the infrared rays emitted by the object to be measured through the optical fiber 12. The temperature measuring device 10 converts the amount of infrared radiation input from the infrared receiving unit 16 into temperature and measures the surface temperature of the object to be measured. This makes it possible to measure the surface temperature of the object to be measured without contact.

[0026] Furthermore, the temperature measuring device 10 measures the surface temperature of the black body 30 placed on the first surface (for example, the upper surface) of the chuck 40 periodically or as needed, and corrects the temperature measured by the temperature measuring device 10.

[0027] The temperature measuring device 10 has a temperature conversion unit 101, a temperature correction unit 102, and a temperature display unit 103 as functional components.

[0028] The temperature conversion unit 101 acquires infrared rays received by the infrared receiving unit 16 through the optical fiber 12, and converts the amount of infrared radiation from the object to be measured into temperature.

[0029] The temperature correction unit 102 measures the blackbody 30 placed in the peripheral region or near the peripheral region of the chuck 40, switches the temperature of the chuck 40 to a temperature required for measurement, and converts the amount of infrared radiation of the blackbody 30 obtained from the infrared receiving unit 16 into temperature at each measurement temperature. The temperature correction unit 102 also creates a correction table in advance based on the amount of infrared radiation and temperature of the blackbody 30.

[0030] Then, the temperature correction unit 102 measures the temperature of the blackbody 30 based on the amount of infrared radiation from the blackbody 30 using the infrared receiving unit 16 periodically or as needed. The temperature correction unit 102 corrects the measurement results of the temperature measuring device 10 by referring to a correction table created in advance and the temperature based on the amount of infrared radiation from the blackbody 30. This makes it possible to periodically calibrate the temperature measuring device 10 and detect abnormalities in the infrared receiving unit 16, the temperature measuring device 10, etc.

[0031] The temperature display unit 103 displays the temperature derived by the temperature conversion unit 101 and the temperature corrected by the temperature correction unit 102. For example, the temperature display unit 103 can be a display unit such as a liquid crystal display.

[0032] The temperature measuring device 10 has the function of inputting the amount of infrared radiation from the infrared receiving unit 16, converting the input amount of infrared radiation into a temperature, and then displaying the converted temperature or converting it into an electrical signal and outputting the electrical signal to another device.

[0033] The test head 13 is connected to the probe card 14 on the other surface (e.g., the bottom surface) via an electrical connection unit 18. The test head 13 is connected to a tester (not shown) and transmits and receives electrical signals between the tester and the probe card 14. This makes it possible to inspect the electrical characteristics of the semiconductor devices on the wafer 20.

[0034] The electrical connection unit 18 is a mounting unit that mounts the probe card 14 on the test head 13 and electrically connects the test head 13 and the probe card 14 together.

[0035] The probe card 14 brings the electrode terminals of the semiconductor device formed on the wafer 20 into contact with the probes 17, applies electrical signals to the semiconductor device via the probes 17, and interconnects response signals from the semiconductor device via the probes 17. The probe card 14 is an example of an electrical connection device that electrically connects the tester and the semiconductor device on the wafer 20. The probe card 14 has a probe assembly 15 having a plurality of probes 17 provided on the second surface (e.g., the lower surface) side.

[0036] The probe assembly 15 is an assembly including a plurality of probes 17, and is provided on the second surface (for example, the lower surface) of the probe card .

[0037] The probe 17 is a conductive contact that forms an electrical path with an electrode terminal of the semiconductor device. The type of the probe 17 is not particularly limited, and it can be, for example, a cantilever type probe or a vertical type probe.

[0038] In this embodiment, an example is shown in which the probe 17 is a conductive contact that forms an electrical path between the probe 17 and the electrode terminal of the semiconductor device. However, if the semiconductor device is an optical semiconductor, the probe 17 may include, in addition to the conductive contact, an optical probe (e.g., an optical fiber) that transmits and receives optical signals between the probe 17 and the optical input / output section of the optical semiconductor.

[0039] The chuck 40 fixes the wafer 20 to a first surface (also called a "chuck top" or a "chuck stage") of the chuck 40 and moves in the X, Y, Z, and θ-axis directions. The chuck 40 also has one or more black bodies 30 provided on the upper surface of the chuck 40. The method of installing the black bodies 30 will be described later.

[0040] The chuck 40 has a chuck temperature sensor (also called the "first temperature sensor") 131 that detects the temperature of the chuck 40, a blackbody mounting portion temperature sensor (also called the "second temperature sensor") 132 that detects the temperature of the blackbody mounting portion 41 on which the blackbody 30 is mounted, and a temperature signal transmission / reception portion 133 that is an interface with the temperature measuring device 10.

[0041] The temperature signal sending / receiving unit 133 sends the chuck temperature signal from the chuck temperature sensor 131 and the blackbody placement portion temperature signal from the blackbody placement portion temperature sensor 132 to the temperature measuring device 10 .

[0042] The θ-axis stage 51, the Z-axis stage 52, the Y-axis stage 53, and the X-axis stage 54 are movement drive mechanisms that move the chuck 40.

[0043] (A-1-2) Detailed configuration of the chuck 40 FIG. 2 is a plan view showing the configuration of the chuck 40 according to the first embodiment.

[0044] As shown in FIG. 2, the shape of the wafer mounting surface of the chuck 40 (top surface shape: that is, the shape of the chuck top) is approximately circular, and the size of the chuck 40 is slightly larger than the size of the wafer 20.

[0045] A black body 30, which has a clear relationship between temperature and amount of infrared radiation, is disposed on the peripheral edge 42 of the wafer mounting surface of the chuck 40.

[0046] 2 shows a case where a total of five black bodies 30 are provided, including four black bodies 30 on the peripheral portion 42 of the wafer mounting surface of the chuck 40 and one black body 30 on a black body mounting portion 41 provided on the peripheral portion 42. The four black bodies 30 are arranged at equal intervals on the peripheral portion 42 of the chuck 40.

[0047] The number of black bodies 30 to be arranged is not limited to this, and one black body 30 may be arranged on the chuck 40, or two or more black bodies 30 may be arranged. The black bodies 30 are used as a reference for the amount of infrared radiation. The arrangement of the black bodies 30 is not particularly limited as long as it is possible to move the black bodies 30 to the position of the infrared receiving unit 16 when calibrating the temperature measuring device. Furthermore, multiple black body mounting units 41 may be provided, and black bodies 30 may be arranged on each black body mounting unit 41.

[0048] The black body 30 is a thermal radiator whose temperature and infrared radiation amount are known in advance. For example, various types of black body 30 can be used, such as a black body in the form of a sticker (black body sticker) or a black body coated with black body paint.

[0049] When the measurement accuracy of the temperature measuring device 10 is checked, or when an abnormality in the measurement accuracy or an abnormality in the infrared sensor occurs, the amount of infrared radiation emitted by the black body 30 is converted into temperature, and a correction table is created using the result.The correction table is then used to correct the temperature signal output value of the temperature measuring device 10.

[0050] In other words, the infrared radiation amount of the blackbody 30 is measured during inspection or periodically, the temperature is derived from the infrared radiation amount, and the temperature signal output value of the temperature measuring device 10 can be calibrated by comparing the temperature with the correction table.

[0051] Since the black body 30 is placed on the wafer mounting surface of the chuck 40, the black body 30 can be moved to the position of the infrared receiving part 16 for measurement even during inspection, and the temperature signal output value of the temperature measuring device 10 can be calibrated without replacing the wafer 20.

[0052] The black body 30 does not need to be an ideal perfect black body, and anything that can be regarded as a black body can be used.

[0053] (A-2) Operation of the First Embodiment (A-2-1) First calibration method FIG. 3 is a flowchart (part 1) showing the operation of the calibration process of the temperature measuring device 10 of the inspection device 1 according to the first embodiment.

[0054] Here, an example of periodic calibration of the temperature measuring device 10 as a non-contact thermometer of an optical fiber type will be described. Note that the order of the calibration process is not limited to that shown in FIG.

[0055] [Step S101] First, the θ-axis stage 51, Z-axis stage 52, Y-axis stage 53, and X-axis stage 54 serving as a movement drive mechanism are driven, and as illustrated in FIG. 4, the movement drive mechanism moves the peripheral area of ​​the wafer mounting surface of the chuck 40 and the black body 30 placed near the periphery to the position of the infrared receiving unit 16 (step S101).

[0056] [Step S102] Next, the temperature of the chuck 40 is set to a temperature required for measurement (step S102). For example, in this embodiment, the temperature is set to "-40°C", "25°C", or "125°C".

[0057] [Step S103] When the temperature of the chuck 40 reaches the set temperature, the infrared light receiving unit 16 receives the infrared light emitted by the black body 30 and transmits the infrared light to the temperature measuring device 10 via the optical fiber 12. The temperature measuring device 10 converts the amount of infrared radiation from the black body 30 into temperature based on the infrared light from the infrared light receiving unit 16 (step S103).

[0058] [Step S105] Next, it is determined whether measurements have been completed at all temperatures required for the measurements (for example, -40°C, 25°C, and 125°C) (step S105).

[0059] If the measurement is completed (step S105 / YES), the process proceeds to step S106, and if the measurement is not completed (step S105 / NO), the process returns to step S102, where the set temperature of the chuck 40 is changed and the process continues.

[0060] [Step S106] A correction table (hereinafter also referred to as a "first correction table") is created based on the amount of infrared radiation of the blackbody 30 and the derived temperature (step S106).

[0061] For example, if a pre-existing relationship table is prepared based on the relationship between the temperature of the blackbody 30 and the amount of infrared radiation, a correction table is created by comparing the pre-existing relationship table with the measurement results obtained in S102, S103, and S105.

[0062] [Step S111] The temperature measuring device 10 compares the correction table with the measurement results of the infrared radiation amount of the blackbody 10 measured periodically, and detects changes over time in the infrared sensor and changes in the infrared radiation amount of the wafer based on the comparison results (step S111).

[0063] (A-2-2) Second calibration method FIG. 5 is a flowchart (part 2) showing the operation of the calibration process of the temperature measuring device 10 of the inspection device 1 of the first embodiment.

[0064] Here, an example of calibration of a value obtained by receiving an amount of infrared radiation corresponding to the surface temperature of a semiconductor device on a wafer during inspection and converting it into a temperature will be described. Note that the order of the calibration process is not limited to that shown in FIG.

[0065] The second calibration processing method is intended to perform calibration without removing the wafer 20 to be measured from the chuck 40.

[0066] For example, when the electrical characteristics of the semiconductor devices on a certain wafer 20 are being inspected, the calibration process is performed without replacing the wafer 20 and without removing the temperature measuring device 10 from the prober 50. Also, for example, after the inspection of a certain wafer 20 is completed and before the next wafer 20 is placed on the chuck 40, calibration using the amount of infrared radiation of the blackbody 30 may be performed.

[0067] [Steps S201 and S202] First, a reference wafer is placed on the chuck 40 (step S201), and the temperature of the chuck 40 is set to a temperature required for measurement (step S202).

[0068] For example, in this embodiment, the temperature is set to "-40°C", "25°C", and "125°C", but the temperature values ​​are not limited to these, and the number of temperature settings is not limited to three.

[0069] [Step S203] The movement drive mechanism drives the θ-axis stage 51, Z-axis stage 52, Y-axis stage 53, and X-axis stage 54 to move the black body 30 on the chuck 40 to the position of the infrared receiving unit 16 (step S203).

[0070] [Step S204] The infrared receiving unit 16 receives the infrared rays emitted by the black body 30 and provides the infrared rays to the temperature measuring device 10. The temperature measuring device 10 converts the amount of infrared radiation from the black body 30 into temperature based on the infrared rays from the infrared receiving unit 16 (step S204).

[0071] [Step S206] Next, a certain semiconductor device formed on the reference wafer is set as a reference device, and the reference device is moved to the position of the infrared receiving unit 16 (step S206). The reference device is set as an arbitrary device (semiconductor device) on the reference wafer.

[0072] [Step S207] The infrared receiving unit 16 receives the infrared rays emitted by the reference device and provides the infrared rays to the temperature measuring device 10. The temperature measuring device 10 converts the amount of infrared radiation from the reference device into temperature based on the infrared rays from the infrared receiving unit 16 (step S207).

[0073] [Step S209] Next, it is determined whether measurements have been completed at all temperatures required for the measurements (for example, -40°C, 25°C, and 125°C) (step S209).

[0074] If the measurement is completed (step S209 / YES), the process proceeds to step S210, and if the measurement is not completed (step S209 / NO), the process returns to step S202, where the set temperature of the chuck 40 is changed and the process continues.

[0075] [Step S210] The temperature measuring device 10 creates a correction table (hereinafter also referred to as the "second correction table") that shows the relationship between the infrared radiation amount and temperature signal value of the blackbody 30 at each set temperature and the relationship between the infrared radiation amount and temperature signal value of the reference device.

[0076] [Step S216] During the inspection, one of the multiple black bodies 30 is moved under the infrared receiving unit 16, and the infrared rays emitted from the black body 30 are received by the infrared receiving unit 16 and transmitted to the temperature measuring device 10. The temperature measuring device 10 then converts the amount of infrared radiation from the black body 30 into temperature. Note that the temperature of the black body 30 may be measured periodically during the inspection.

[0077] Using the correction table created in S210 and the infrared radiation amount and temperature of the black body 30 measured during inspection, the change over time of the infrared receiving unit 16 as an infrared sensor and the change in the infrared radiation amount of the wafer are detected (step S216).

[0078] (A-3) Effects of the First Embodiment As described above, conventionally, when a non-contact thermometer is calibrated, the thermometer is removed from the prober or a blackbody wafer for calibration is used. However, according to the first embodiment, by providing a blackbody on the chuck, calibration is possible by measuring the radiation amount of the blackbody during inspection or periodically. As a result, the complicated processing load can be reduced and the wafer surface temperature can be measured.

[0079] Furthermore, according to the first embodiment, calibration can be performed even during inspection of the wafer (semiconductor device), so that the wafer surface temperature can be measured accurately.

[0080] (B) Second embodiment Next, a second embodiment of the inspection device according to the present invention will be described with reference to the drawings.

[0081] (B-1) Configuration of the second embodiment FIG. 6 is a diagram showing the overall configuration of an inspection device according to the second embodiment.

[0082] In Figure 6, the inspection device 1A of the second embodiment, like the first embodiment, is equipped with a temperature measuring device 10, a prober 50, and a test head 13, and in addition, has a non-contact length measuring device 61 that measures the distance between the light incident surface of the infrared receiving unit 16 and the first surface (e.g., the top surface) of the wafer 20, and a transmission path 62 that transmits distance information (sensing data) of the non-contact length measuring device 61 to the temperature measuring device 10.

[0083] The temperature measuring device 10 of the second embodiment also includes a temperature conversion unit 101, a temperature correction unit 102, and a temperature display unit 103.

[0084] FIG. 7 is an explanatory diagram for explaining distance measurement by a non-contact distance measuring device 61 according to the second embodiment.

[0085] The non-contact length measuring device 61 measures the distance to the object in a non-contact manner by transmitting light toward the object and receiving the reflected light.

[0086] For example, as illustrated in FIG. 7, the light entrance portion (end portion) of the infrared receiving unit 16 is provided facing the semiconductor device on the wafer 20, and the position of the light entrance portion of the infrared receiving unit 16 serves as the reference for measuring the amount of infrared radiation.

[0087] The positions of the light entrance (end) of the infrared receiving unit 16 and the end of the non-contact length measuring device 61 are assumed to be known in advance, and the distance (distance in the Z-axis direction; height) between the end of the non-contact length measuring device 61 and the light entrance of the infrared receiving unit 16 is defined as "W2".

[0088] Furthermore, when the non-contact length measuring device 61 targets the top surface of the wafer 20, the distance between the end of the non-contact length measuring device 61 and the top surface of the wafer 20 (distance in the Z-axis direction; height) is defined as "W1."

[0089] (B-2) Operation of the Second Embodiment FIG. 8 is a flowchart showing the operation of the calibration process of the temperature measuring device 10 of the inspection device 1A of the second embodiment.

[0090] S201 to S204, S206, S207, S209, S210, and S216 in Fig. 8 are the processes explained in Fig. 4 of the first embodiment. These processes have already been explained in the first embodiment, so they will be left to the explanation in Fig. 4 of the first embodiment. Here, the processes of S301 to S302 will be explained.

[0091] [Step S301] Distance data from the non-contact length measuring device 61 is transmitted to the temperature correction unit 102 of the temperature measuring device 10 (step S301).

[0092] Here, an example of a method for deriving the distance between the non-contact length measuring device 61 and the upper surface of the wafer 20 will be described.

[0093] For example, the distance W2 (distance in the Z-axis direction; height) between the end of the non-contact length measuring device 61 and the light entrance part of the infrared receiving unit 16 is set in advance. Therefore, by subtracting W2 from the distance W1 measured by the non-contact length measuring device 61 to the wafer 20, the distance "W1-W2" between the light entrance part (end) of the infrared receiving unit 16 and the upper surface of the wafer 20 is derived.

[0094] [Step S302] The temperature correction unit 102 refers to the relationship between the distance from the wafer 20 and the correction temperature that has been set in advance, and determines the correction temperature corresponding to the distance (W1-W2) between the light entrance part (end) of the infrared receiving unit 16 and the top surface of the wafer 20 (step S302).

[0095] For example, assume that there is a relationship between the distance to the wafer 20 and the corrected temperature as illustrated in Fig. 9. The temperature corrector 102 refers to the relational expression in Fig. 9 to determine the corrected temperature corresponding to the distance (W1-W2) between the light entrance portion (edge) of the infrared receiver 16 and the upper surface of the wafer 20. Then, by adding the corrected temperature to the actual measured surface temperature of the wafer 20, the corrected wafer surface temperature can be determined.

[0096] (B-3) Effects of the Second Embodiment As described above, according to the second embodiment, the effects of the first embodiment can be obtained.

[0097] Furthermore, although the amount of infrared light entering the infrared receiving unit can vary depending on the distance between the light entrance (edge) of the infrared receiving unit and the upper surface of the wafer, the second embodiment can correct the wafer surface temperature by taking into account a correction value according to the distance, thereby providing a more accurate wafer surface temperature.

[0098] (C) Other embodiments According to the above-described first and second embodiments, the following functions are possible.

[0099] (C-1) Corrections can be made at any time based on the correction value obtained from the data of a non-contact thermometer using a calibration blackbody furnace, which is performed during inspection equipment shipment and periodic calibration. However, the transmittance may change due to the fitting condition or deterioration of the optical path (fiber, lens barrel, lens, etc.).

[0100] In contrast, according to this embodiment, inspection and secondary correction are required using a reference light-emitting body (i.e., a black body at a constant temperature) in the actual usage environment, and a function can be provided to perform secondary calibration by providing a black body on a portion of the top surface of the wafer chuck, or by providing a wafer chuck with a separate black body, so that the difference in the amount of light emitted in each temperature range is kept below a certain level.

[0101] (C-2) When the temperature is applied to the wafer with the most average finish among the devices to be measured or the wafer used initially as a reference using a wafer chuck or the like, the difference between the value of the temperature sensor built into the wafer chuck and the measured value of the chuck surface temperature is measured, and a function can be provided to correct measurement errors that differ depending on the design of the actual workpiece, etc.

[0102] (C-3) The system has a function to collect data on temperature changes due to the distance between the object to be measured and the infrared receiver in advance, monitor this distance information as needed, and adjust the amount of correction based on the obtained distance information. The distance information required for this correction can be obtained from a device that positions the distance in the Z-axis direction, or by installing a height sensor around the infrared receiver. [Explanation of symbols]

[0103] 1 and 1A: inspection device, 10: temperature measuring device, 12: optical fiber, 13: test head, 14: probe card, 15: probe assembly, 16: infrared receiving unit, 17: probe, 18: electrical connection unit, 20: object under test, 30: blackbody non-contact thermometer calibration member, 40: chuck, 41: blackbody mounting portion, 42: peripheral portion, 50: prober, 51: θ-axis stage, 52: Z-axis stage, 53: Y-axis stage, 54: X-axis stage, 61: non-contact length measuring device, 62: signal transmission path, 101: temperature conversion unit, 102: temperature correction unit, 103: temperature display unit.

Claims

1. 1. An inspection apparatus for inspecting an object to be inspected by bringing electrode terminals of the object to contact conductive contacts to electrically connect a tester to the object to be inspected, a test subject support part that supports the test subject; an infrared receiving unit that receives infrared rays emitted from at least the object to be inspected as a temperature measurement object; a temperature measuring device having a temperature conversion function for converting the infrared light from the infrared receiving unit into the temperature of the object to be measured; Equipped with The support portion for the object under test has a black body in a peripheral region or in the vicinity of the peripheral region of the support portion for the object under test. An inspection device characterized by:

2. The temperature measuring device is The temperature measuring device has a temperature correction unit that acquires the amount of infrared radiation of the black body from the infrared receiving unit, using the black body placed in the peripheral region or near the peripheral region of the support unit for the object under test as the temperature measurement object, and corrects the converted temperature based on the amount of infrared radiation of the black body.

2. The inspection device according to claim 1.

3. a distance measuring unit for measuring a distance between the object under test supported by the object under test support unit and the infrared receiving unit, The temperature correction unit performs temperature correction according to the distance between the object to be inspected and the infrared receiving unit, by referring to a previously set relationship between the temperature and the distance between the object to be inspected and the infrared receiving unit.

2. The inspection device according to claim 1.

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