Display device

Abstract

A novel input / output panel that is highly convenient or reliable is provided. A novel input / output device that is highly convenient or reliable is provided. A novel input / output panel, a novel input / output device, or a novel semiconductor device is provided.SOLUTION: A structure in which a pixel, a sensor element, a signal line, a control line, and a scan line are included, the sensor element includes a region overlapping with the pixel, the signal line is electrically connected to the sensor element, the signal line is electrically connected to the pixel, the control line is electrically connected to the sensor element, and the scan line is electrically connected to the pixel is used for an input / output panel.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to an input / output panel, an input / output device, or a semiconductor device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one aspect relates to an article, a method, or a manufacturing method. One aspect of the present invention is a process, machine, manufacture, or composition. Therefore, the invention disclosed herein more specifically relates to The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, Examples include their driving methods and their manufacturing methods. [Background technology]

[0003] The common electrode for display originally provided in the liquid crystal display element is replaced with a pair of electrodes for the touch sensor. One of the electrodes (drive electrode) is used as the other electrode (detection electrode for the sensor) and is newly formed. In addition, the existing common drive signal as a display drive signal is used as a touch sensor drive signal. A configuration in which the same is also shared is known (Patent Document 1).

[0004] Touch signal lines such as drive and sense lines and ground regions in the display pixel stackup and other circuit elements are grouped together to form a touch sensitive display on or near the display. A configuration for forming a switch sensing circuit is known (Patent Document 2). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-244958 [Patent Document 2] Japanese Patent Application Laid-Open No. 2011-197685 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one aspect of the present invention is to provide a novel input / output panel that is highly convenient and reliable. Another object of the present invention is to provide a novel input / output device that is highly convenient and reliable. Alternatively, a new input / output panel, a new input / output device, or a new semiconductor device One of the objectives is to provide a facility for

[0007] The description of these problems does not preclude the existence of other problems. It is not necessary for the present invention to solve all of these problems. The above will be made clear from the description, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0008] (1) One embodiment of the present invention is an input / output panel having a pixel, a sensor element, and a signal line. .

[0009] The sensing element has an area that overlaps with the pixel.

[0010] The signal lines are electrically connected to the sensing elements, and the signal lines are electrically connected to the pixels.

[0011] (2) Another embodiment of the present invention is the input / output panel having the control lines and the scanning lines. do.

[0012] The control line is electrically connected to the sensing element.

[0013] The scanning lines are electrically connected to the pixels.

[0014] This allows the image signal and the detection signal to be supplied using one signal line. In addition, the number of wirings can be reduced, and objects approaching the pixel can be detected. As a result, a novel input / output panel with excellent convenience and reliability can be provided.

[0015] (3) In addition, one aspect of the present invention is a sensing element comprising a first conductive film and a second conductive film. It is an input / output panel equipped with

[0016] The first conductive film is electrically connected to the control line.

[0017] The second conductive film is electrically connected to the signal line, and an electric field is generated between the second conductive film and the first conductive film. The slits are arranged to form a groove.

[0018] The electric field has a region that is blocked by its neighbors.

[0019] This allows the change in capacitance to be used to detect an object approaching the pixel. The first conductive film and the second conductive film can be used as a mutual capacitance type proximity sensor. As a result, a novel input / output panel with excellent convenience and reliability can be provided. .

[0020] (4) In another embodiment of the present invention, the pixel is an input / output device including a pixel circuit and a display element. It is a panel.

[0021] The pixel circuits are electrically connected to the signal lines and the scanning lines.

[0022] The display element is electrically connected to the pixel circuit, and the display element has a first electrode and a second electrode. do.

[0023] The first electrode is electrically connected to the pixel circuit.

[0024] The second electrode is electrically connected to the control line.

[0025] This allows one control line to be used to, for example, supply power to the pixel and to transmit, for example, a control signal to the sensing element. It is possible to supply the power to the device. It is also possible to reduce the number of wires. As a result, it is more convenient and It is possible to provide a novel input / output panel with excellent reliability.

[0026] (5) In addition, one aspect of the present invention is a method for detecting a temperature difference between a group of multiple sensing elements and another group of multiple sensing elements. , the input / output panel.

[0027] A group of the plurality of sensing elements includes the above-mentioned sensing element, and the plurality of sensing elements are arranged in the row direction. The group of sensing elements is electrically connected to a control line.

[0028] Another group of the plurality of sensing elements includes the above-mentioned sensing element, and the other group of the plurality of sensing elements is arranged in the row direction. The other group of plural detector elements are arranged in a row direction intersecting the signal line. are connected to the network.

[0029] (6) In addition, one aspect of the present invention is a method for detecting a pixel having a group of a plurality of pixels and another group of a plurality of pixels. This is the input / output panel shown above.

[0030] The group of pixels includes the above-mentioned pixel, and the group of pixels is arranged side by side in the row direction. A group of pixels is electrically connected to a scanning line.

[0031] Another group of pixels includes the pixel described above, and another group of pixels includes a pixel in a column direction intersecting the row direction. Another group of pixels is electrically connected to a signal line.

[0032] This allows a plurality of detector elements to be arranged in a matrix, for example. The elements can be arranged in a matrix, for example. Furthermore, images can be displayed. As a result, it is possible to provide a system that is convenient and reliable. A novel input / output panel can be provided.

[0033] (7) In addition, one aspect of the present invention is an input / output device in which the above-mentioned sensing element has an area overlapping with a plurality of pixels. It is a power panel.

[0034] The plurality of pixels are electrically connected to one scanning line and electrically connected to another scanning line. The plurality of pixels include pixels electrically connected to the signal lines and pixels electrically connected to other signal lines. This includes pixels connected to

[0035] This allows the display elements to be arranged at a higher density than the detector elements. It is possible to display more precise position information than the resolution that can be obtained using As a result, a novel input / output panel with excellent convenience and reliability can be provided.

[0036] (8) Another embodiment of the present invention is a semiconductor device including any one of the input / output panels described above, an oscillator circuit, and , an input / output device having a switching circuit, a driving circuit, and a detection circuit.

[0037] The oscillator circuit is electrically connected to the control line.

[0038] The drive circuit is electrically connected to the switching circuit.

[0039] The sensing circuit is electrically connected to the switching circuit.

[0040] The switching circuit is electrically connected to the signal line, and the switching circuit drives the It has the function of electrically connecting the operating circuit to the signal line or the detecting circuit to the signal line. .

[0041] This allows, for example, an image signal to be supplied to the pixel using one signal line, and a detection signal to be supplied to the pixel using one signal line. can be supplied to the detection circuit. Also, the number of wirings can be reduced. As a result, It is possible to provide a novel input / output device that is highly convenient and reliable.

[0042] In the drawings accompanying this specification, components are classified by function and are shown as independent blocks. However, it is difficult to completely separate the components by function in reality. It is possible that one component may be involved in multiple functions.

[0043] In this specification, the source and drain of a transistor are used to indicate the polarity and The name changes depending on the level of the potential applied to the terminal. Generally, n-channel In a transistor with a low potential, the terminal to which a low potential is applied is called the source, and the terminal to which a high potential is applied is called the The terminal to which the voltage is applied is called the drain. The terminal to which a high potential is applied is called the drain, and the terminal to which a high potential is applied is called the source. For convenience, let us assume that the source and drain are fixed. However, in reality, the source and drain are connected according to the above potential relationship. The way they are handled changes.

[0044] In this specification, the source of a transistor is a part of a semiconductor film that functions as an active layer. The source region connected to the semiconductor film or the source electrode connected to the semiconductor film. The drain of the transistor is a drain region that is a part of the semiconductor film, or a region that is part of the semiconductor film. "Gate" means the gate electrode.

[0045] In this specification, the state in which transistors are connected in series means, for example, Only one of the source or drain of one transistor is connected to the source or drain of the second transistor. It also means that the transistors are connected in parallel. The state where either the source or drain of the first transistor is connected to the second transistor and the source or drain of the first transistor is connected to one of the source and drain of the second transistor. The other of the two transistors is connected to the other of the source or drain of the second transistor. do.

[0046] In this specification, connection means an electrical connection, and a current, voltage, or potential is supplied. Therefore, the connected state corresponds to the state where the signal can be supplied or transmitted. does not necessarily refer to the state in which a current, voltage, or potential is available or transferable. The signals are transmitted through circuit elements such as wires, resistors, diodes, and transistors. This also includes the state of being directly connected.

[0047] In this specification, when components that are independent on the circuit diagram are connected to each other, However, in reality, for example, when a part of the wiring functions as an electrode, one conductive film may be connected to multiple In this specification, the term "connection" refers to such a Cases in which one conductive film has the functions of multiple components are also included in this category.

[0048] In this specification, either the first electrode or the second electrode of a transistor is a source the other refers to the drain electrode. [Effects of the Invention]

[0049] According to one aspect of the present invention, it is possible to provide a novel input / output panel that is highly convenient and reliable. Alternatively, a novel input / output device with excellent convenience and reliability can be provided. An input / output panel, a novel input / output device, or a novel semiconductor device can be provided.

[0050] The description of these effects does not preclude the existence of other effects. The embodiment does not necessarily have to have all of these effects. , the specification, drawings, claims, etc., and It is possible to extract other effects from the claims and other descriptions. [Brief explanation of the drawings]

[0051] [Figure 1] 1A and 1B are a block diagram and a circuit diagram illustrating a configuration of an input / output device according to an embodiment. [Figure 2] 1A and 1B are a block diagram and a schematic diagram illustrating a configuration of an input / output device according to an embodiment. [Figure 3] FIG. 1 is a block diagram illustrating a configuration of an input / output device according to an embodiment. [Figure 4] FIG. 1 is a block diagram illustrating a configuration of an input / output device according to an embodiment. [Figure 5] 1A and 1B are top views illustrating a structure of a pixel that can be used for an input / output device according to an embodiment. [Figure 6] 1A and 1B are cross-sectional views illustrating a structure of a pixel that can be used for an input / output device according to an embodiment. [Figure 7] 1A and 1B are cross-sectional views illustrating a structure of a pixel that can be used for an input / output device according to an embodiment. [Figure 8] 1A and 1B are cross-sectional views illustrating a structure of a pixel that can be used for an input / output device according to an embodiment. [Figure 9] 1A and 1B are cross-sectional views illustrating a structure of a pixel that can be used for an input / output device according to an embodiment. [Figure 10] 1A and 1B are top views illustrating a structure of a pixel that can be used in an input / output device according to an embodiment. [Figure 11] 1A and 1B are cross-sectional views illustrating a structure of a pixel that can be used for an input / output device according to an embodiment. [Figure 12] 1A and 1B are a cross-sectional view and a circuit diagram illustrating a structure of a pixel that can be used in an input / output device according to an embodiment. [Figure 13] 1A and 1B are cross-sectional views illustrating a structure of a pixel that can be used for an input / output device according to an embodiment. [Figure 14] 1A and 1B are cross-sectional views illustrating a structure of a pixel that can be used for an input / output device according to an embodiment. [Figure 15] 1A and 1B are cross-sectional views illustrating a structure of a pixel that can be used for an input / output device according to an embodiment. [Figure 16] 1A to 1C are schematic diagrams illustrating a method for driving an input / output device according to an embodiment. [Figure 17] 1A and 1B are a top view and a cross-sectional view of a semiconductor device; [Figure 18] 1A and 1B are diagrams illustrating cross sections of semiconductor films. [Figure 19] FIG. 1 is a diagram illustrating energy bands. [Figure 20] 1A to 1C illustrate a structure of an electronic device according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0052] An input / output panel according to one embodiment of the present invention includes a pixel, a detector element, a signal line, a control line, a scanning line, and a the sensing element has an area overlapping the pixel, and the signal line is electrically connected to the sensing element; The signal lines are electrically connected to the pixels, the control lines are electrically connected to the sensing elements, and the scan lines are electrically connected to the pixels. and electrically connected to each other.

[0053] This allows, for example, an image signal to be supplied to a pixel using one signal line, and a detection circuit The number of wirings can be reduced. As a result, new and convenient inputs with high reliability can be obtained. An output panel can be provided.

[0054] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention may be modified in various ways in form and detail without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be achieved by the following embodiments. It should not be construed as being limited to the contents of the description. The same reference numerals are used in different drawings to denote the same parts or parts having similar functions. A repeated explanation will be omitted.

[0055] (Embodiment 1) In this embodiment, a structure of an input / output panel according to one embodiment of the present invention will be described with reference to FIGS. He explains while doing so.

[0056] 1 and 2 show the configurations of an input / output device 700 and an input / output panel 700TP according to one embodiment of the present invention. FIG.

[0057] FIG. 1A is a block diagram of an input / output device 700 of one embodiment of the present invention, and FIG. 1B is a block diagram of an input / output device 700 of one embodiment of the present invention. 10 is a circuit diagram illustrating a part of the input / output panel 700TP shown in FIG.

[0058] FIG. 2A is a block diagram of an input / output device 700 of one embodiment of the present invention, and FIG. 2B is a block diagram of an input / output device 700 of one embodiment of the present invention. 10 is a block diagram illustrating a part of the input / output panel 700TP shown in FIG.

[0059] 3 and 4 show a switching circuit and a FIG. 2 is a diagram illustrating a configuration of a detection circuit.

[0060] FIG. 3A shows a signal line S(j) and a signal line S(j) that can be used in the input / output device of one embodiment of the present invention. The connection relationship between the switching circuit SWC and the detection circuit DC is explained below. FIG. 3B is a block diagram illustrating a part of the switching circuit SWC shown in FIG. 3A. FIG.

[0061] FIG. 4(A) shows a different connection relationship between the switching circuit SWC and the detection circuit D FIG. 10 is a block diagram illustrating the connection relationship of C2.

[0062] FIG. 4B shows a connection relationship between the switching circuit SWC and the driving circuit S, which is different from that shown in FIG. 4A. FIG. 10 is a block diagram illustrating the connection relationship of D2.

[0063] 5 and 6 illustrate a pixel configuration that can be used in an input / output device according to one embodiment of the present invention. This is a diagram.

[0064] FIG. 5 is a top view of a pixel that can be used in an input / output device of one embodiment of the present invention, and FIG. 6(B) is a cross-sectional view illustrating the structure of the cross section taken along the line X3-X4 shown in FIG. ) is a cross-sectional view illustrating a part of FIG. 6(A).

[0065] In this specification, variables that take integer values ​​of 1 or more may be used as symbols. For example, (p) includes a variable p that takes an integer value of 1 or more, and identifies any of the components up to p. For example, the variables m and m, which take integer values ​​of 1 or more, and variable n, is a part of a code that identifies one of up to m × n components. It may be used in parts.

[0066] <Example of input / output device configuration> The input / output device 700 described in this embodiment includes an input / output panel 700TP and an oscillation circuit OS C, a switching circuit SWC, a driving circuit SD, and a detection circuit DC (FIG. 1(A) reference).

[0067] The oscillator circuit OSC is electrically connected to the control line C(g).

[0068] The drive circuit SD is electrically connected to the switching circuit SWC.

[0069] The detection circuit DC is electrically connected to the switching circuit SWC.

[0070] The switching circuit SWC is electrically connected to the signal line S(j), and the switching circuit SWC is Based on the signal S, the drive circuit SD or the detection circuit DC is electrically connected to the signal line S(j). It has the function to do this.

[0071] <Example of input / output panel configuration> (1) The input / output panel 700TP described in this embodiment has a pixel 702(i, j) and a detection The sensor element D(g, h) and the signal line S(j) are all are also independent variables, and are all integers greater than or equal to 1.

[0072] Sensing element D(g,h) has an area that overlaps pixel 702(i,j).

[0073] The signal line S(j) is electrically connected to the sensing element D(g,h), and the signal line S(j) is connected to the pixel 70 2(i,j) are electrically connected (see FIG. 1(B)).

[0074] (2) The input / output panel 700TP also has control lines C(g) and scanning lines G(i). do.

[0075] The control line C(g) is electrically connected to the sensing element D(g,h).

[0076] The scan line G(i) is electrically connected to the pixel 702(i,j).

[0077] This allows the image signal and the detection signal to be supplied using one signal line. In addition, the number of wires can be reduced. As a result, a new input that is highly convenient and reliable can be realized. An output panel can be provided.

[0078] (3) The detection element D(g, h) of the input / output panel 700TP has a first conductive film and and a second conductive film.

[0079] The first conductive film is electrically connected to the control line C(g), and the second conductive film is electrically connected to the signal line S(j). For example, the control line C(g) can be used as the first conductive film. Also, for example, the signal line S(j) can be used as the second conductive film (FIG. 1(B), FIG. 5 and Figure 6(A)).

[0080] The second conductive film is disposed so as to form an electric field between itself and the first conductive film (FIG. 1(B) and (See FIG. 6(A) and FIG. 6(B)). Note that the electric field has a region that is blocked by nearby objects. In other words, an electric field having a region that is blocked by nearby objects is formed between the control line C(g) and the The signal line S(j) is arranged so as to form a

[0081] This allows the pixel to detect an object close to it using a change in capacitance. As a result, a novel input / output panel with excellent convenience and reliability can be provided.

[0082] For example, signal line S(j)1 and signal line S(j)2 can be used for signal line S(j). (See FIG. 6A). Specifically, the input / output panel 700TP is A conductive film disposed near the display surface side of the signal line S(j)2 can be used. This increases the sensitivity of detecting anything approaching the input / output panel. For example, a conductive film that can be manufactured in the same process as the first electrode 751(i, j) is used as the signal It can be used for line S(j)2.

[0083] (4) The pixel 702(i, j) of the input / output panel 700TP is a pixel circuit 730 (i,j) and display element 750(i,j) (see FIG. 1(B)).

[0084] The pixel circuit 730(i,j) is electrically connected to the signal line S(j) and the scanning line G(i). do.

[0085] The display element 750(i,j) is electrically connected to the pixel circuit 730(i,j). 750(i,j) comprises a first electrode 751(i,j) and a second electrode (FIG. 1(B) 5 and 6(A). Also, the display element 750(i, j) has a layer 750 containing a liquid crystal material. 53 can be provided.

[0086] The first electrode 751(i,j) is electrically connected to the pixel circuit 730(i,j).

[0087] The second electrode is electrically connected to the control line C(g). It can be used for the second electrode.

[0088] This allows one control line to be used to, for example, power a pixel and control, for example, a sensing element. It is possible to supply control signals and reduce the number of wires. It is possible to provide a novel input / output panel with excellent performance and reliability.

[0089] (5) The input / output panel 700TP also includes a group of sensing elements D(g,1) to D( g, q) and another group of detector elements D(1, h) to D(p, h) ( See Figure 2(A)).

[0090] The group of sensing elements D(g,1) to D(g,q) includes sensing element D(g,h). A group of detector elements D(g,1) to D(g,q) are arranged in the row direction (indicated by arrow R in the figure). A group of sensing elements D(g,1) to D(g,q) are connected to a control line C(g) is electrically connected to the

[0091] Another group of detector elements D(1,h) to D(p,h) includes detector element D(g,h). The other group of detector elements D(1,h) to D(p,h) are arranged in the column direction crossing the row direction. The other group of sensing elements D(1, The sensing elements D(p,h) through D(p,h) are electrically connected to the signal line S(j).

[0092] (6) The input / output panel 700TP also includes a group of pixels 702(i,1) to 702(i,2). i,n) and another group of pixels 702(1,j) through 702(m,j).

[0093] The group of pixels 702(i,1) through 702(i,n) includes pixel 702(i,j). A group of pixels 702(i,1) to 702(i,n) are arranged side by side in the row direction, A group of pixels 702(i,1) through 702(i,n) are electrically connected to scan line G(i). To be continued.

[0094] Another group of pixels 702(1,j) through 702(m,j) are Another group of pixels 702(1,j) through 702(m,j) intersects the row direction. Another group of pixels 702(1,j) to 702(m,j) are arranged in a row. , and are electrically connected to the signal line S(j).

[0095] This allows a plurality of detector elements to be arranged in a matrix, for example. The elements can be arranged in a matrix, for example. Furthermore, images can be displayed. As a result, it is possible to provide a system that is convenient and reliable. A novel input / output panel can be provided.

[0096] (7) Furthermore, the detector element D(g, h) of the input / output panel 700TP detects the pixel 702(i, j). 1 to 702(i+r, j+s) (see FIG. 2B). , s are all independent variables and are all integers equal to or greater than 1.

[0097] Pixels 702(i,j) through 702(i+r,j+s) are pixels 702(i,j) through 702(i+r,j+s). The pixel 702(i,j+s) is included. +s) is electrically connected to the scanning line G(i).

[0098] Furthermore, pixels 702(i,j) to 702(i+r,j+s) are pixels 702(i+r ,j) to pixel 702(i+r,j+s). The pixel 702(i+r,j+s) is electrically connected to the scan line G(i+r).

[0099] Furthermore, pixels 702(i,j) to 702(i+r,j+s) are pixels 702(i,j ) to pixel 702(i+r,j). i+r,j) is electrically connected to the signal line S(j).

[0100] Furthermore, pixels 702(i,j) to 702(i+r,j+s) are pixels 702(i,j Pixels 702(i,j+s) to 702(i+r,j+s) are included. The pixel 702(i+r,j+s) is electrically connected to the signal line S(j+s).

[0101] This allows the display elements to be arranged at a higher density than the detector elements. It is possible to display more precise position information than the resolution that can be obtained using As a result, a novel input / output panel with excellent convenience and reliability can be provided.

[0102] In addition, the pixel 702(i,j) that can be used in the input / output device 700 of one embodiment of the present invention An example of the configuration will be described with reference to FIG. 1(B), FIG. 5 and FIG.

[0103] Pixel 702(i,j) includes pixel circuit 730(i,j) and display element 750(i,j). (See Figure 1(B)).

[0104] The pixel circuit 730(i,j) includes a transistor SW and a capacitance element C1.

[0105] The transistor SW has a gate electrode electrically connected to the scanning line G(i), and a first electrode It is electrically connected to Line S(j).

[0106] The capacitance element C1 has a first electrode electrically connected to a second electrode of the transistor SW, and a second The electrode is electrically connected to the conductive film CSCOM.

[0107] Furthermore, the display element 750(i,j) of the input / output panel 700TP has a first electrode 751(i,j). j), a second electrode, and a layer 753 containing a liquid crystal material (see FIG. 6(A)). The control line C(g) can be used as the second electrode, which is connected to the first electrode 751(i,j ) are arranged so that an electric field that controls the orientation of the liquid crystal material is generated between them.

[0108] The first electrode 751(i, j) is electrically connected to the second electrode of the transistor SW. The second electrode of the display element 750(i,j) is electrically connected to the control line C(g) (see FIG. 1). (See (B)).

[0109] The input / output panel 700TP according to one embodiment of the present invention includes a colored film CF, a light-shielding film BM, a functional film 7 10P or functional membrane 770P (see FIG. 6(A)).

[0110] The colored film CF also has an area that overlaps with the display element 750(i, j).

[0111] The light-shielding film BM also has an opening in the area overlapping the display element 750(i, j).

[0112] The insulating film 771 is formed in a region sandwiched between the layer 753 containing a liquid crystal material and the light-shielding film BM or , a layer 753 containing a liquid crystal material and a region sandwiched between the colored film CF.

[0113] The functional film 770P has an area that sandwiches the display element 750(i, j) between itself and the functional film 710P. do.

[0114] The input / output panel 700TP of one embodiment of the present invention includes a base material 710 or a base material 770. The material 770 has an area that overlaps with the substrate 710, and the display elements 750 (i, j) is provided.

[0115] The input / output panel 700TP of one embodiment of the present invention includes an insulating film 721, an insulating film 718, and an insulating film 71 6, has an insulating film 701 and an insulating film 706.

[0116] The insulating film 721 includes a region sandwiched between the layer 753 containing a liquid crystal material and the transistor SW. The insulating film 718 has a region sandwiched between the insulating film 721 and the transistor SW. The insulating film 716 has a region sandwiched between the insulating film 718 and the transistor SW. The film 701 has a region sandwiched between the transistor SW and the substrate 710. 06 includes a region sandwiched between the insulating film 716 and the insulating film 701.

[0117] <Switching circuit SWC> The switching circuit SWC is electrically connected to the signal lines S(1) to S(n) (see FIG. 2). (See (A)).

[0118] The switching circuit SWC comprises a group of circuits 301(1) to 301(n) (not shown). The group of circuits 301(1) to 301(n) includes circuit 301(j) (see FIG. 3( A) or see Figure 3(B)).

[0119] The circuit 301(j) and the signal line S(j) are electrically connected. Based on the switching signal S, the drive circuit SD and the signal line S(j) or the detection circuit DC and the signal line S( j) is electrically connected.

[0120] For example, during the period when the drive circuit SD and the signal line S(j) are electrically connected, the detection circuit DC and the signal Alternatively, for example, the driver circuit SD and the signal line S(j) are electrically disconnected. During the period when the detection circuit DC is electrically disconnected, the detection circuit DC and the signal line S(j) are electrically connected.

[0121] Regarding the image signals supplied by the driver circuit, the switching circuit SWC is used as a demultiplexer. For example, the number of outputs is smaller than the number of driver circuits SD. A driver circuit SD2 having a terminal is used to supply a signal to the signal lines S(j) to S(j+s). A serial signal including an image signal for the purpose of image capture is supplied from one output terminal, and the switching circuit SWC is This allows the size of the driver circuit SD2 to be reduced. It can be made smaller than the drive circuit SD.

[0122] <Detection circuit DC> The detection circuit DC comprises a group of circuits 351(1) to 351(n) (not shown). The group of circuits 351(1) to 351(n) includes circuit 351(j) (see FIGS. 3(A) to 3(C)). (See Figure 3(B)).

[0123] For example, the circuit 351(j) and the signal line S(j) are electrically connected via the circuit 301(j). During this period, the circuit 351(j) generates a detection signal based on the change in the potential of the signal line S(j). It has the function of supplying a signal.

[0124] For example, a detection circuit DC2 can be used in place of the detection circuit DC (see FIG. 4(A)). The detection circuit DC2 includes a group of circuits 351(1)2 to 351(q)2. (not shown). A group of circuits 351(1)2 to 351(q)2 are circuits 351(j)2 Includes.

[0125] For example, the circuit 351(j)2 and the signal line S(j) are electrically connected via the circuit 301(j). During this period, the circuit 351(j)2 detects that the signal lines S(j) to S(j+s) A group of circuits that provide a detection signal based on a change in the potential of the connected node. By using circuits 351(1)2 to 351(q)2, the scale of the detection circuit DC2 can be reduced. It can be reduced.

[0126] <Drive circuit SD> The drive circuit SD generates an image signal to be supplied to the pixel circuit based on, for example, image information. Specifically, it has a function to generate a signal whose polarity is inverted. For example, it can drive a liquid crystal element.

[0127] For example, various sequential circuits such as shift registers can be used for the drive circuit SD. .

[0128] For example, an integrated circuit can be used for the driver circuit SD. The formed integrated circuit can be used for the driver circuit SD.

[0129] For example, the drive circuit SD is mounted on the terminal using the COG (Chip on Glass) method. Specifically, an integrated circuit can be mounted on a terminal using an anisotropic conductive film. Alternatively, the COF (Chip on Film) method can be used to attach an integrated circuit to the terminals. This can be implemented.

[0130] <Oscillator circuit OSC> The oscillator circuit OSC is electrically connected to the control line C(g) and has the function of supplying a control signal. For example, a square wave, a sawtooth wave, a triangular wave, etc. can be used as the control signal.

[0131] 《Components》 The individual elements that make up the input / output device or input / output panel will be described below. These components cannot be clearly separated, and one component may also be part of another component. May include:

[0132] For example, the control line C(g) is also the first conductive film of the sensing element D(g,h), and the display element 7 It is also the second electrode of 50(i,j).

[0133] The input / output device 700 of one embodiment of the present invention includes an input / output panel 700TP, an oscillator circuit OSC, a switch The switching circuit SWC, the driving circuit SD, or the detection circuit DC.

[0134] Furthermore, the input / output device 700 of one embodiment of the present invention includes a pixel 702(i,j), a sensing element D(g, h), signal lines S(i), control lines C(g) or scanning lines G(i).

[0135] Furthermore, in the input / output device 700 of one embodiment of the present invention, the first conductive film, the second conductive film, the pixel circuit 7 30(i,j) or display element 750(i,j).

[0136] The input / output device 700 of one embodiment of the present invention includes a transistor SW, a capacitor C1, a first It has an electrode 751(i,j) and a layer 753 containing a second electrode or liquid crystal material.

[0137] The input / output device 700 according to one embodiment of the present invention includes a colored film CF, a light-shielding film BM, a functional film 710P, and a Or it has a functional membrane 770P.

[0138] The input / output device 700 of one embodiment of the present invention includes an insulating film 771, an insulating film 721, and an insulating film 71. 8, the insulating film 716, the insulating film 701, or the insulating film 706.

[0139] The input / output device 700 of one embodiment of the present invention includes a base material 710 or a base material 770 .

[0140] <Wiring, conductive film> Conductive materials can be used for wiring etc. Specifically, conductive materials can be used for , signal line S(i), control line C(g), scanning line G(i), first conductive film, second conductive film, It can be used for the first electrode 751(i, j), the second electrode, the conductive film CSCOM, and the like.

[0141] For example, inorganic conductive materials, organic conductive materials, metals, or conductive ceramics can be used for wiring etc. It can be used for.

[0142] Specifically, aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, and molybdenum , a metal selected from tungsten, nickel, iron, cobalt, palladium, or manganese The elements can be used for wiring, etc. Alternatively, alloys containing the above-mentioned metal elements can be used. In particular, copper and manganese alloys can be used for wet etching. It is suitable for microfabrication.

[0143] Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a titanium nitride film on a titanium nitride film, Two-layer structure with a tungsten film laminated on a titanium nitride film, two-layer structure with a tungsten film laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium film or a tungsten nitride film; A three-layer structure in which an aluminum film is layered on top of the titanium film, and a titanium film is then formed on top of that. etc. can be used for wiring etc.

[0144] Specifically, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, Conductive oxides such as zinc oxide doped with gallium can be used for wiring and the like.

[0145] Specifically, a film containing graphene or graphite can be used for wiring or the like.

[0146] For example, a film containing graphene oxide is formed and reduced to obtain a graphene oxide film. As a reduction method, a film containing graphene can be formed. and a method using a reducing agent.

[0147] For example, a film containing metal nanowires can be used for wiring. Nanowires containing such nanowires can be used.

[0148] Specifically, conductive polymers can be used for wiring and the like.

[0149] <<Transistor Switch>> For example, a bottom gate or top gate transistor can be used as a transistor SW. It can be used.

[0150] For example, a transistor using a semiconductor containing a group 14 element for the semiconductor film can be used. Specifically, a semiconductor containing silicon can be used for the semiconductor film. Semiconductors such as crystalline silicon, polysilicon, microcrystalline silicon, or amorphous silicon A transistor using a film can be used.

[0151] For example, a transistor using an oxide semiconductor for a semiconductor film can be used. The oxide semiconductor includes an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc. A conductor can be used for the semiconductor film.

[0152] For example, the leakage current in the off state is This allows smaller transistors to be used for transistor switches etc. Specifically, a transistor using an oxide semiconductor for the semiconductor film 708 can be used as a transistor. It can be used for SW etc.

[0153] This allows pixel circuits that use transistors that use amorphous silicon as a semiconductor film. Compared to the transistor SW, the pixel circuit can hold the image signal for a longer period of time. Specifically, it is possible to suppress the occurrence of flicker while keeping the selected signal at 30 Hz. The frequency may be less than 1 Hz, preferably less than 1 Hz, and more preferably less than once per minute. As a result, fatigue accumulated in the user of the input / output device can be reduced. This can reduce the power consumption associated with the above.

[0154] For example, the semiconductor film 708, the conductive film 704, the insulating film 706, the conductive film 712A, and the conductive film 7 A transistor including 12B can be used as a transistor SW (FIG. 6B). Note that the conductive film 704 has a region overlapping with the semiconductor film 708, and the conductive film 712A and The insulating film 706 is electrically connected to the semiconductor film 708. The conductive film 704 is sandwiched between the conductive film 708 and the conductive film 704 .

[0155] The conductive film 704 functions as a gate electrode, and the insulating film 706 functions as a gate insulating film. The conductive film 712A has either a function of a source electrode or a function of a drain electrode. The conductive film 712B functions as the other of the source electrode and the drain electrode.

[0156] For example, a 10 nm thick film containing tantalum and nitrogen and a 300 nm thick film containing copper A conductive film formed by stacking these in this order can be used as the conductive film 704.

[0157] For example, a 400 nm thick film containing silicon and nitrogen and a 400 nm thick film containing silicon, oxygen, and nitrogen A material obtained by stacking a 200 nm thick film containing the above compound can be used for the insulating film 706.

[0158] For example, a 25 nm thick film containing indium, gallium, and zinc is deposited on the semiconductor film 708. It can be used.

[0159] For example, a 50 nm thick film containing tungsten and a 400 nm thick film containing aluminum are A conductive film in which a conductive film having a thickness of 100 nm and a titanium-containing film are stacked in this order is called a conductive film 712. A or the conductive film 712B.

[0160] Display element 750(i, j) For example, a display element having a function of controlling reflection or transmission of light is referred to as a display element 750(i, For example, it can be used in a configuration in which a liquid crystal element and a polarizing plate are combined, or in a shutter. A light-emitting type MEMS display element or the like can be used.

[0161] For example, IPS (In-Plane-Switching) mode, TN (Twiste d Nematic) mode, FFS (Fringe Field Switching) ) mode, ASM (Axially Symmetric aligned Micro -cell) mode, OCB (Optically Compensated Bias fringence mode, FLC (Ferroelectric Liquid Crystal Crystal mode, AFLC (AntiFerroelectric Liquid It uses a liquid crystal element that can be driven using a driving method such as a (crystal) mode. It is possible.

[0162] Furthermore, for example, a vertical alignment (VA) mode, specifically, an MVA (Multi-Domain Vertical Alignment mode, PVA (Patterned Ve Orthogonal Alignment mode, ECB (Electrically Co ntrolled Birefringence) mode, CPA(Continuouou) mode Pinwheel Alignment mode, ASV (Advanced Su A liquid crystal element that can be driven using a driving method such as a (per-View) mode is used. It is possible.

[0163] The display element 750(i,j) includes a first electrode 751(i,j), a second electrode, and a liquid crystal material. The layer 753 containing a liquid crystal material is connected to the first electrode 751(i, j) and and a liquid crystal material whose orientation can be controlled using a voltage between the first and second electrodes. The thickness direction (also called the vertical direction) of the layer containing the liquid crystal material, the direction crossing the vertical direction (the horizontal direction or An electric field in a diagonal direction (also called an oblique direction) can be used to control the alignment of the liquid crystal material.

[0164] Layer 753 containing liquid crystal material For example, thermotropic liquid crystal, low molecular weight liquid crystal, polymer liquid crystal, polymer dispersed liquid crystal, ferroelectric Liquid crystal, antiferroelectric liquid crystal, or the like can be used for the layer 753 containing a liquid crystal material. esteric phase, smectic phase, cubic phase, chiral nematic phase, isotropic phase, etc. Alternatively, a liquid crystal material exhibiting a blue phase can be used. Cut.

[0165] First electrode 751(i,j) For example, a material used for wiring or the like can be used for the first electrode 751(i, j). In general, a light-transmitting conductive material can be used for the first electrode 751(i, j). do.

[0166] 《Colored film CF》 A material that transmits light of a predetermined color can be used for the colored film CF. F can be used for example in color filters, e.g., blue, green or red light The colored film CF can be made of a material that transmits yellow light or white light. A transparent material can be used for the colored film CF.

[0167] 《Light blocking film BM》 A material that blocks light transmission can be used for the light-shielding film BM. For example, it can be used for a black matrix.

[0168] "Insulating Film 771" For example, polyimide, epoxy resin, acrylic resin, or the like can be used for the insulating film 771. do.

[0169] <Functional Membrane 710P, Functional Membrane 770P> For example, an anti-reflection film, a polarizing film, a retardation film, a light diffusion film or a light condensing film. A film or the like can be used for the functional film 710P or the functional film 770P.

[0170] For example, there are anti-static films that prevent dust from adhering, water-repellent films that make it difficult for dirt to adhere, and A hard coat film that suppresses the occurrence of scratches associated with the process can be used for the functional film 770P.

[0171] 《Base material 710, base material 770》 The substrate 710 or the substrate 770 is made of a material having heat resistance sufficient to withstand the heat treatment during the manufacturing process. For example, a material having a thickness of 0.1 mm or more and 0.7 mm or less can be used as the substrate 71. 0 or the substrate 770. Specifically, it can be polished to a thickness of about 0.1 mm. Materials that have been used can be used.

[0172] For example, 6th generation (1500mm x 1850mm), 7th generation (1870mm x 2200 mm), 8th generation (2200mm x 2400mm), 9th generation (2400mm x 2800 10th generation (2950mm x 3400mm) and large-area glass substrates 710 or the substrate 770. This makes it possible to manufacture a large display device. It is possible.

[0173] The substrate 710 or the substrate 7 For example, inorganic materials such as glass, ceramics, and metals can be used as substrates. 710 or substrate 770, etc.

[0174] Specifically, non-alkali glass, soda-lime glass, potash glass, crystal glass, Luminosilicate glass, tempered glass, chemically tempered glass, quartz, sapphire, etc., are used as the substrate 71 0 or the substrate 770. Specifically, inorganic oxide films, inorganic nitride films, etc. Alternatively, an inorganic oxynitride film or the like can be used for the substrate 710 or the substrate 770. For example, For example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, etc. It can be used for the substrate 710 or the substrate 770. Stainless steel or aluminum Aluminum or the like can be used for the substrate 710 or the substrate 770 or the like.

[0175] For example, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a silicon A compound semiconductor substrate such as silicon germanium, an SOI substrate, etc. is mounted on the substrate 710 or the substrate 770, etc. This allows the semiconductor element to be formed on the base material 710 or the base material 770, etc. It is possible.

[0176] For example, an organic material such as a resin, a resin film, or a plastic is used as the substrate 710 or the substrate 7 70, etc. Specifically, polyester, polyolefin, polyamide a resin film or resin plate such as polyimide, polycarbonate or acrylic resin, It can be used for the substrate 710 or the substrate 770, etc.

[0177] For example, a metal plate, a thin glass plate, or a film of an inorganic material is laminated to a resin film or the like. The composite material can be used for the substrate 710 or the substrate 770. For example, a fibrous or is a composite material in which particulate metal, glass, or inorganic material is dispersed in a resin film, and the substrate 710 or the substrate 770. For example, fibrous or particulate resins can also be used. Alternatively, a composite material in which an organic material or the like is dispersed in an inorganic material is used as the substrate 710 or the substrate 770. You can be there.

[0178] In addition, a single layer material or a multi-layered material may be attached to the substrate 710 or the substrate 770. For example, a substrate and an insulating film that prevents the diffusion of impurities contained in the substrate are laminated. The material can be used for the substrate 710 or the substrate 770. Specifically, glass Silicon oxide layer, silicon nitride layer or oxynitride layer to prevent the diffusion of impurities contained in the glass The substrate 710 or the substrate 720 is a material on which one or more films selected from a silicon nitride layer or the like are laminated. It can be used for the material 770, etc. Or, it can be used for the resin and the acid that prevents the diffusion of impurities that permeate the resin. A material having a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like laminated thereon is used as a substrate 7. 10 or substrate 770, etc.

[0179] Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate A resin film such as a polyethylene terephthalate or acrylic resin, a resin plate, a laminate material, or the like is used as the substrate 710 or It can be used for the substrate 770, etc.

[0180] Specifically, polyester, polyolefin, polyamide (nylon, aramid, etc.), Polyimide, polycarbonate, polyurethane, acrylic resin, epoxy resin or silicone A material containing a resin having a siloxane bond, such as corn, is used as the substrate 710 or the substrate 770. You can be there.

[0181] Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PE N), polyethersulfone (PES) or acrylic, etc., are used as base material 710 or base material 77 It can be used for 0 etc.

[0182] Furthermore, paper or wood can be used for the base material 710 or the base material 770 .

[0183] For example, a flexible substrate can be used as the base material 710 or the base material 770 .

[0184] Note that a method of forming a transistor, a capacitor, or the like directly on a substrate can be used. In addition, for example, a substrate for a process that has heat resistance to heat applied during a manufacturing process may be used to form a transistor or A capacitor element or the like is formed, and the formed transistor or capacitor element or the like is attached to the substrate 710 or the substrate 770, etc., can be used. This allows for flexible substrates, for example. A transistor, a capacitor, or the like can be formed on the insulating film.

[0185] "Insulating Film 721" For example, insulating inorganic materials, insulating organic materials, or insulating materials containing inorganic and organic materials. A composite material can be used for the insulating film 721 and the like.

[0186] Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like, or a film selected from these. A laminated material obtained by laminating a plurality of such materials can be used for the insulating film 721. For example, Silicon film, silicon nitride film, silicon oxynitride film, aluminum oxide film, or the like, or A film containing a laminated material in which a plurality of materials selected from the above are laminated can be used as the insulating film 721, etc. .

[0187] Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate polysiloxane, acrylic resin, or a combination of multiple resins selected from these A layer material, a composite material, or the like can be used for the insulating film 721. The insulating film may be formed using a material that can be used.

[0188] As a result, for example, steps resulting from various structures overlapping the insulating film 721 can be flattened. This can be done.

[0189] "Insulating Film 701" For example, the material that can be used for the insulating film 721 can be used for the insulating film 701. Specifically, a material containing silicon and oxygen can be used for the insulating film 701. This makes it possible to suppress the diffusion of impurities into the pixel circuits 730(i,j) and the like.

[0190] <Example 2 of input / output device configuration> Another configuration of the input / output device of one embodiment of the present invention will be described with reference to FIG.

[0191] FIG. 7 is a cross-sectional view illustrating the configuration of pixel 702(i,j)B.

[0192] Note that pixel 702(i,j)B has signal line S(j)2B instead of signal line S(j)2. This is different from pixel 702(i,j) which will be described with reference to FIG. The parts that can be used in the same manner will be described in detail, and the parts that can be used in the same manner will be described in detail. is used as a reference.

[0193] For example, a film that can be formed in the same process as the control line C(g) is used for the signal line S(j)2. You can be there.

[0194] <Configuration example 3 of input / output device> Another configuration of the input / output device of one embodiment of the present invention will be described with reference to FIG.

[0195] FIG. 8 is a cross-sectional view illustrating the configuration of pixel 702(i,j)C.

[0196] In addition, the pixel 702(i,j)C has the first electrode 75 instead of the first electrode 751(i,j). 1(i,j)C, and the control line C(g)C instead of the control line C(g) are shown in Fig. 6.

[0197] <Example 4 of input / output device configuration> Another configuration of the input / output device of one embodiment of the present invention will be described with reference to FIG.

[0198] FIG. 9 is a cross-sectional view illustrating the configuration of pixel 702(i,j)D.

[0199] Note that pixel 702(i,j)D has signal line S(j)2D instead of signal line S(j)2. a first electrode 751(i,j)D is provided in place of the first electrode 751(i,j); The fact that the control line C(g)D is used instead of the control line C(g) is the same as the image described with reference to FIG. It is different from element 702(i,j).

[0200] <Configuration example 5 of input / output device> Another structure of the input / output device of one embodiment of the present invention will be described with reference to FIG.

[0201] FIG. 10 is a cross-sectional view illustrating the configuration of pixel 702(i,j)E.

[0202] Note that the pixel 702(i,j)E has a conductive oxide semiconductor film connected to the control line C(g)E. The point that the control line C(g)E is used and the auxiliary wiring C(g)2 that compensates for the conductivity of the control line C(g)E is provided is the same as that shown in FIG. This is different from pixel 702(i,j), which will be explained with reference to the pixel 702(i,j). The above description will be used in detail to explain the same in parts where a similar configuration can be used.

[0203] For example, an oxide semiconductor film that can be formed in the same process as the semiconductor film of the transistor SW. can be used for the control line C(g)E. Specifically, For example, an oxide semiconductor film including the insulating film 71 in contact with the control line C(g)E can be used. A silicon nitride film formed by a CVD method or the like can be used for the film 8. The conductivity of the control line C(g)E can be increased.

[0204] For example, a conductive film that can be formed in the same process as the conductive film 712A or the conductive film 712B. The conductive film can be used for the auxiliary wiring C(g)2. The area overlapping with the opening is arranged so as to be smaller than the area not overlapping with the opening of the pixel.

[0205] <Example 6 of I / O device configuration> Another structure of the input / output device of one embodiment of the present invention will be described with reference to FIG.

[0206] FIG. 11(A) is a cross-sectional view illustrating the configuration of pixel 702(i,j)F. FIG. 11B is a cross-sectional view illustrating a part of FIG.

[0207] In addition, the pixel 702(i,j)F uses the control line C(g) instead of the control line C(g) which also serves as the second electrode. (g) F, and a top-gate transistor instead of a bottom-gate transistor. The pixel 702(i,j) differs from the pixel 702(i,j) described with reference to FIG. Now, we will explain the differences in detail and explain the parts where similar configurations can be used. The above description is incorporated herein by reference.

[0208] For example, a film that can be formed in the same process as the first electrode 751(i, j) is used as the control line C (g) Can be used for F.

[0209] <Example 7 of input / output device configuration> Another structure of the input / output device of one embodiment of the present invention will be described with reference to FIG.

[0210] FIG. 12(A) is a cross-sectional view illustrating the configuration of pixel 702(i,j)G. 7B) is a circuit diagram illustrating the configuration of pixel 702(i,j)G.

[0211] The pixel 702(i,j)G has a second electrode COM and a control electrode that also serves as the second electrode. The fact that the control line C(g)G is provided instead of the control line C(g)F will be explained with reference to FIG. The pixel 702(i,j) is different from the pixel 702(i,j)F. Here, the different parts will be explained in detail. The above description is used for the parts where the above configuration can be used.

[0212] For example, the control line C(g)G has a region where the substrate 770 is sandwiched between the layer 753 containing the liquid crystal material. This allows the control line C(g)G to be placed near anything that comes close to the I / O panel 700TP. It can be arranged.

[0213] <Example 8 of input / output device configuration> Another structure of the input / output device of one embodiment of the present invention will be described with reference to FIG.

[0214] FIG. 13 is a cross-sectional view illustrating the configuration of pixel 702(i,j)H.

[0215] The pixel 702(i,j)H is illuminated by the backlight from the substrate 770 side toward the substrate 710 side. At the point where the light BL is irradiated, the signal line S(j)2H is provided between the signal line S(j)1 and the substrate 710. the colored film CF is provided between the insulating film 721 and the insulating film 718; the conductive film 704 The conductive film 724 has a region where a semiconductor film is sandwiched between the conductive film 724 and the semiconductor film 724. This allows display on the substrate 710 side. In addition, it is possible to detect an object approaching the base material 710 side. 4 can function as a second gate electrode. Here, the different parts are explained in detail. The above description will be used for parts where a similar configuration can be used.

[0216] For example, a conductive film that can be formed in the same process as the scanning line G(i) is used for the signal line S(j). Can be used for 2H.

[0217] <Example 9 of input / output device configuration> Another structure of the input / output device of one embodiment of the present invention will be described with reference to FIG.

[0218] FIG. 14 is a cross-sectional view illustrating the configuration of pixel 702(i,j)I.

[0219] The pixel 702(i,j)I is a display device having a function of emitting light toward the substrate 770 side. The point having the element 750(i,j)I has an opening in the area overlapping with the display element 750(i,j). The insulating film 728 is provided between the insulating film 728 and the substrate 770. This is different from pixel 702(i,j) which will be explained with reference to FIG. The parts that can be used in the same manner as above will be described in detail. Using Ming as a reference.

[0220] For example, an organic EL element can be used for the display element 750(i,j). An organic EL element that emits white light can be used as the display element 750(i,j).

[0221] The display element 750(i,j)I is located between the first electrode 751(i,j) and the control line C(g). The light-emitting layer 753I includes a layer 753I containing a light-emitting material.

[0222] For example, a light-emitting organic material or quantum dots may be used for the layer 753I containing a light-emitting material. It is possible.

[0223] For example, the material that can be used for the insulating film 721 can be used for the insulating film 728 or 729. You can be there.

[0224] The insulating film 729 has a function of dividing the control line C(g) into a predetermined shape. 29 has a reverse tapered shape at the end. The conductive film C(g) can be separated from the conductive film. Specifically, it can be separated into stripes. It is possible.

[0225] <Configuration example 10 of input / output device> Another structure of the input / output device of one embodiment of the present invention will be described with reference to FIG.

[0226] FIG. 15 is a cross-sectional view illustrating the configuration of pixel 702(i,j)J.

[0227] The pixel 702(i,j)J is a display element 750( i, j)J, and the area sandwiched between the signal line S(j)1 and the substrate 710 The point having the signal line S(j)2J corresponds to the pixel 702(i,j) described with reference to FIG. This allows display on the substrate 710 side. It can detect nearby objects.

[0228] For example, an organic EL element can be used for the display element 750(i,j)J. , an organic EL element that emits light such as red, green, or blue is used as the display element 750(i,j)J. For example, a shadow mask method or an ink jet method can be used. Layers containing luminescent materials that emit light of different colors can be fabricated on the same substrate. .

[0229] The display element 750(i,j)J is located between the first electrode 751(i,j) and the control line C(g). and a layer 753J containing a light-emitting material.

[0230] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0231] (Embodiment 2) In this embodiment, a driving method of an input / output panel according to one embodiment of the present invention will be described with reference to FIGS. 16A to 16C are schematic diagrams illustrating a method for driving the input / output device of one embodiment of the present invention. do.

[0232] 16(A1) and 16(B1) are schematic diagrams of the input / output panel, and FIG. 16(A2) 16(B2) shows the period during which an image signal is written and the period during which a control signal is supplied to the detection element. 1 is a schematic diagram illustrating the above.

[0233] <Example 1 of how to drive the input / output panel> The method of driving the input / output device 700 described in this embodiment is a method of driving the input / output device 700 for one frame period of the display device. During this process, there are four steps:

[0234] First Step In the first step, a switching signal S is supplied to drive the driving circuit SD through the signal lines S(1) to S(3). It is electrically connected to the signal line S(n).

[0235] Second Step In the second step, the scanning lines G(1) to G(m) are sequentially selected to obtain the image. The period during which the second step is performed is called the image signal input period. Alternatively, it can be called a signal writing period.

[0236] For example, in a period T(V) starting from time 0, scanning lines G(1) to G(m) are The scanning lines G(1) to G(m) are selected in order. (See FIG. 16(A2)). This selects the pixels in each row, Image signals are input to the pixels row by row. For example, a common potential is supplied to the control lines C(1) through C(p).

[0237] The third step In a third step, a switching signal S is supplied to connect the detection circuit DC to the signal lines S(1) to S(2). It is electrically connected to the signal line S(n).

[0238] The Fourth Step In the fourth step, the control lines C(1) to C(p) are sequentially selected and the control signal is applied. A detection circuit SC detects changes in the potential of the signal lines S(1) to S(n). The detection element to which the control signal is supplied is detected by the device close to the input / output panel 700TP. An electric field having a region where the control line C(g) is blocked is formed between the control line C(g) and the signal line S(j). The detection circuit can detect an approaching object based on a change in the potential of the signal line S(j). Cut.

[0239] The period during which the second step is performed is called a sensing period or a signal reading period. It can be called a period.

[0240] This makes it possible to keep the potential of the control line constant during the period in which the scanning lines are selected sequentially. In addition, the potential of the scanning line can be kept constant during the period when the control lines are selected sequentially. In addition, image signals can be written to pixels without being affected by changes in the potential of the control lines that accompany selection. As a result, a novel input / output panel driving method that is highly convenient and reliable can be achieved. can provide.

[0241] <Example 2 of how to drive the input / output panel> Another driving method of the input / output device 700 described in this embodiment includes the following five steps: It has a group.

[0242] First Step In the first step, a switching signal S is supplied to drive the driving circuit SD through the signal lines S(1) to S(3). It is electrically connected to the signal line S(n).

[0243] Second Step In the second step, the control lines that overlap with the control lines that have not yet been selected in one frame period are An image signal is supplied while sequentially selecting scanning lines electrically connected to pixels having the area. The period during which the second step is performed is called the image signal input period or the signal writing period. This can be called a peak period.

[0244] For example, in the period T1(i), the control signal that has not yet been selected in the one frame period is Scanning lines G(i) to G(g) electrically connected to pixels having an area overlapping with the scanning line C(g) G(i+r) are selected in order. Note that when selecting scanning lines G(i) to G(i+r), The state of the image signal is shown schematically using a straight line LV (see FIG. 16(B2)). A signal is input to the pixels electrically connected to the scanning lines G(i) to G(i+r) one row at a time. During the period T1(i), a predetermined potential, for example, a common potential is applied to the control line C( g).

[0245] The third step In a third step, a switching signal S is supplied to connect the detection circuit DC to the signal lines S(1) to S(2). It is electrically connected to the signal line S(n).

[0246] The Fourth Step In the fourth step, a control signal is supplied while selecting the control line C(g), and the detection circuit S C is used to detect changes in the potential of the signal lines S(1) to S(n). The selection of (g) is shown schematically using a line LS.

[0247] The fifth step Next, all the scanning lines and all the control lines are selected in that one frame period. The first to fourth steps are repeated in this manner.

[0248] For example, the selected control line C(g) has an overlapping area with the adjacent control line C(g+1). An image signal is supplied while sequentially selecting the scanning lines electrically connected to the pixels, and then a control A control signal is supplied while selecting the line C(g+1), and the detection circuit SC is used to detect the signal line S(1) A change in the potential of the signal line S(n) is detected.

[0249] This allows the image signal to be written to the pixel without being interfered with by the change in potential of the control line that accompanies selection. As a result, a new input / output panel can be driven with excellent convenience and reliability. We can provide a method.

[0250] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0251] (Embodiment 3) In this embodiment, a structure of a semiconductor device that can be used as an input / output device of one embodiment of the present invention will be described. This will be described with reference to FIG.

[0252] FIG. 17 illustrates a structure of a transistor TR that can be used in an input / output device of one embodiment of the present invention. 17A is a diagram illustrating a semiconductor device that can be used in an input / output device of one embodiment of the present invention. 17B is a top view of a transistor that can be used as the transistor TR. 17(A) includes a cross section in the channel length (L) direction of a transistor. FIG. 17(C) is a cross-sectional view of the transistor described with reference to FIG. 17(A). The cross section includes a cross section in the channel width (W) direction. Note that the cutting line L1-L2 direction is the channel width. The longitudinal direction, the direction of the cutting line W1-W2, may be referred to as the channel width direction.

[0253] The transistor TR can be used in the input / output device described in the first embodiment. Cut.

[0254] For example, when the transistor TR is used as the transistor SW, the insulating film 102 is used as the second insulating film. The insulating film 701 is connected to the conductive film 104, the insulating film 106 is connected to the insulating film 706, and the semiconductor The conductive film 108 is connected to the semiconductor film 708, the conductive film 112a is connected to the conductive film 712A, and the conductive film 112b is connected to the conductive film 712B. The insulating film 114 and the insulating film 116 are laminated on the conductive film 712B. , the insulating film 118 can be read as the insulating film 718 .

[0255] <Transistor configuration example 1> A transistor that can be used in an input / output device of one embodiment of the present invention has a second insulating film 102 the conductive film 104 on the second insulating film 102 and the insulating film 106 on the conductive film 104; The semiconductor film 108 on the semiconductor film 106, the conductive film 112b on the semiconductor film 108, and the conductive film 112b on the semiconductor film 108 the conductive film 112a, the semiconductor film 108, the conductive film 112b, and the insulating film over the conductive film 112a. 114, an insulating film 116 on the insulating film 114, and a conductive film 124 on the insulating film 116. (See FIG. 17(B)).

[0256] For example, the conductive film 104 functions as a first gate electrode, and the conductive film 112b functions as a source electrode. The conductive film 112a functions as a drain electrode, and the conductive film 124 functions as a second gate electrode. The insulating film 106 functions as a first gate insulating film, and the insulating film 114 functions as an electrode. The film 116 functions as a second gate insulating film.

[0257] For example, an oxide semiconductor can be used for the semiconductor film 108. Specifically, indium or an oxide semiconductor film containing indium, gallium, and zinc. It can be used for the membrane 108.

[0258] The semiconductor film 108 is made of In, M (M is Al, Ga, Y, or Sn), Zn, It has.

[0259] For example, the semiconductor film 108 preferably has a region in which the atomic ratio of In is greater than the atomic ratio of M. However, the semiconductor device of one embodiment of the present invention is not limited thereto, and the atomic ratio of In is preferably M. or the atomic ratio of In is equal to the atomic ratio of M. The same area may be used.

[0260] The semiconductor film 108 has a region where the atomic ratio of In is greater than the atomic ratio of M. The field effect mobility of the transistor can be increased. Field effect mobility is 10 cm 2 More preferably, the transistor The field-effect mobility of the sta 2 / Vs can be exceeded.

[0261] <Effects of two gate electrodes> A transistor that can be used in an input / output device according to one embodiment of the present invention has two gate electrodes. It is possible.

[0262] The effect of the two gate electrodes on the transistor characteristics is explained with reference to Figure 17(C). do.

[0263] As shown in FIG. 17C, the conductive film 124 functioning as the second gate electrode is formed in the opening 1. The gate electrode 104 is electrically connected to the conductive film 104 functioning as the first gate electrode through the gate electrode 22. Therefore, the conductive film 104 and the conductive film 124 are applied with the same potential.

[0264] As shown in FIG. 17C, the semiconductor film 108 faces the conductive film 104 and the conductive film 124. The gate electrode is sandwiched between two conductive films that function as gate electrodes.

[0265] The lengths of the conductive film 104 and the conductive film 124 in the channel width direction are respectively equal to the channel width of the semiconductor film 108. The length of the semiconductor film 108 is longer than the length in the channel width direction. , 116 are covered by the conductive film 104 and the conductive film 124 .

[0266] In other words, the conductive film 104 and the conductive film 124 are provided on the insulating films 106, 114, and 116. The semiconductor film 108 is connected to the opening 122 formed therein and is positioned outside the side edge of the semiconductor film 108. It has an area.

[0267] With this structure, the semiconductor film 108 included in the transistor is formed by the conductive film 104 The first gate electrode and the second gate electrode can be electrically surrounded by the electric field of the conductive film 124. The oxide semiconductor film in which the channel region is formed is electrically surrounded by the electric field of the gate electrode. The device structure of the transistor including the surrounded channel (S-chan This can be called a nel structure.

[0268] Since the transistor has an S-channel structure, the first gate electrode The conductive film 104 allows an electric field to be effectively applied to the semiconductor film 108 to induce a channel. This improves the current driving capability of the transistor and provides high on-current characteristics. In addition, since the on-current can be increased, the transistor Furthermore, the semiconductor film 108 of the transistor is a first gate electrode. The conductive film 104 functions as an electrode and the conductive film 124 functions as a second gate electrode. Since the structure is surrounded by the metal, the mechanical strength can be increased.

[0269] In the above description, the first gate electrode and the second gate electrode are connected to each other. For example, a conductive film that functions as the second gate electrode may be formed on the surface of the insulating film. The conductive film 712B functions as a source electrode or a drain electrode of the transistor SW. The structure may be such that the wiring is electrically connected to the wiring.

[0270] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0271] (Fourth embodiment) In this embodiment, a structure of a transistor that can be used for an input / output device of one embodiment of the present invention will be described. The structure of the transistor will be described with reference to FIGS. 18 and 19. The structure of an oxide semiconductor film that can be used as the semiconductor film will be described.

[0272] Note that the transistor described in this embodiment is used as, for example, a transistor SW. can be done.

[0273] Figure 18 shows a cross-sectional view of the transistor in the channel length (L) direction. Figure 18(A) shows three films. 1 is a cross-sectional view in the channel length (L) direction of a transistor including an oxide semiconductor film in which FIG. 18B shows a channel of a transistor including an oxide semiconductor film in which two films are stacked. FIG. 1 is a cross-sectional view in the length (L) direction.

[0274] 19 is a schematic diagram illustrating the band structure of a laminated film. The laminated film is made up of an oxide semiconductor film and It has an insulating film in contact with it. In order to make it easier to understand the band structure, the laminated film is The energy level (Ec) of the conduction band minimum of each oxide semiconductor film and each insulating film is shown. .

[0275] FIG. 19(A) shows the insulating film 106, the semiconductor films 108a, 108b, and 108c, and the insulating film 1 14 is an example of a band structure in the thickness direction of a laminated structure having the same structure.

[0276] 19B shows the insulating film 106, the semiconductor films 108b and 108c, and the insulating film 114. 1 is an example of a band structure in the film thickness direction of a laminated structure having the structure shown in FIG.

[0277] <Configuration Example 1 of Semiconductor Device> For example, a semiconductor film consisting of three layers sandwiched between two insulating films is called a transistor. Specifically, the insulating film 106 and the insulating film 116 can be used for A semiconductor film in which the semiconductor film 108a, the semiconductor film 108c, and the semiconductor film 108b are stacked. can be used for the transistor (see FIG. 18(A) and FIG. 19(A)).

[0278] The semiconductor film 108c has an area overlapping with the semiconductor film 108a, and the semiconductor film 108b has an area overlapping with the semiconductor film 108a. , and includes a region sandwiched between the semiconductor film 108a and the semiconductor film 108c.

[0279] The insulating film 116 has an area where it overlaps with the insulating film 106 .

[0280] The semiconductor film 108a has a region in contact with the insulating film 106, and the semiconductor film 108c has a region in contact with the insulating film 106. 16, and both areas have overlapping areas.

[0281] 19A shows a case where a silicon oxide film is used as the insulating film 106 and the insulating film 114. The semiconductor film 108a is a metal oxide film having an atomic ratio of In:Ga:Zn=1:3:2. The oxide semiconductor film formed using a metal target is used as the semiconductor film 108b. Formed using a metal oxide target with an atomic ratio of In:Ga:Zn=4:2:4.1 The semiconductor film 108c is an oxide semiconductor film having an atomic ratio of metal elements of In:Ga :Zn=1:3:2 metal oxide target is used to form an oxide semiconductor film. FIG.

[0282] <Configuration Example 2 of Semiconductor Device> For example, a semiconductor film sandwiched between two insulating films is called a transistor. Specifically, the insulating film 106 and the insulating film 116 can be used for The oxide semiconductor film in which the semiconductor film 108b and the semiconductor film 108c are stacked is used as a transistor. (See FIG. 18(B) and FIG. 19(B)).

[0283] The semiconductor film 108c has a region where it overlaps with the semiconductor film 108b.

[0284] The insulating film 116 has an area where it overlaps with the insulating film 106 .

[0285] The semiconductor film 108b has a region in contact with the insulating film 106, and the semiconductor film 108c has a region in contact with the insulating film 106. 16, and both areas have overlapping areas.

[0286] 19B shows a case where a silicon oxide film is used as the insulating film 106 and the insulating film 114. The semiconductor film 108b is made of a metal having an atomic ratio of In:Ga:Zn=4:2:4.1. An oxide semiconductor film formed using an oxide target is used, and a gold film is used as the semiconductor film 108c. Formed using a metal oxide target with an atomic ratio of In:Ga:Zn=1:3:2 FIG. 1 is a band diagram of a structure using a metal oxide film.

[0287] <Band structure of semiconductor films> As shown in FIGS. 19(A) and 19(B), in the semiconductor films 108a, 108b, and 108c, The energy level at the bottom of the conductive band changes gradually. In other words, it changes or changes continuously. In order to have such a band structure, the semiconductor film 10 The interface between 8a and the semiconductor film 108b, or the interface between the semiconductor film 108b and the semiconductor film 108c In this case, impurities exist that form defect levels such as trap centers and recombination centers. Let's say I don't.

[0288] To form continuous junctions on the semiconductor films 108a, 108b, and 108c, a load lock chamber Each film is deposited in the atmosphere using a multi-chamber deposition system (sputtering system) equipped with It is necessary to stack the layers continuously without them touching.

[0289] By using the structure shown in FIGS. 19(A) and 19(B), the semiconductor film 108b becomes a well. In the transistor using the above stacked structure, the channel region is formed in the semiconductor film 108b. You can see that this is possible.

[0290] Note that by providing the semiconductor films 108a and 108c, the semiconductor film 108b can be formed. Therefore, the trap levels can be made farther away from the semiconductor film 108b.

[0291] In addition, the trap level is the energy at the bottom of the conduction band of the semiconductor film 108b that functions as a channel region. The electrons can accumulate in the trap level, and the electrons can be farther from the vacuum level than the energy level (Ec). When electrons accumulate in the trap level, they become a fixed negative charge. As a result, the threshold voltage of the transistor shifts in the positive direction. The energy level is closer to the vacuum level than the energy level (Ec) of the bottom of the conduction band of the semiconductor film 108b. By doing so, electrons are less likely to accumulate in the trap level. This makes it possible to increase the on-current of the transistor and also to improve field-effect mobility. The degree can be increased.

[0292] In addition, the semiconductor films 108a and 108c have a lower energy level at the conduction band edge than the semiconductor film 108b. The energy level is close to the vacuum level, and is typically the energy level of the bottom of the conduction band of the semiconductor film 108b. The difference between the energy levels of the semiconductor films 108a and 108c and the energy levels of the bottom ends of the conduction bands is 0.15 eV or less. or 0.5 eV or more and 2 eV or less, or 1 eV or less. The difference between the electron affinity of the semiconductor films 108a and 108c and the electron affinity of the semiconductor film 108b is 0. It is 15 eV or more, or 0.5 eV or more and 2 eV or less, or 1 eV or less.

[0293] With this configuration, the semiconductor film 108b becomes the main path of the current, and the channel region The semiconductor films 108a and 108c function as a semiconductor in which a channel region is formed. Since the conductive film 108b is an oxide semiconductor film made up of one or more metal elements, , the interface between the semiconductor film 108a and the semiconductor film 108b, or the interface between the semiconductor film 108b and the semiconductor film 108c. At the interface with 08c, interfacial scattering is unlikely to occur. Since the movement of the electrons is not hindered, the field effect mobility of the transistor is increased.

[0294] In addition, the semiconductor films 108a and 108c are formed in a manner to prevent them from functioning as part of the channel region. Therefore, a material with sufficiently low conductivity is used. 8c shows the semiconductor film 10 8b, and the energy level of the conduction band minimum is equal to the energy level of the conduction band minimum of the semiconductor film 108b. The material used has a difference (band offset) between the drain and the drain. In order to suppress the occurrence of a difference in threshold voltage depending on the magnitude of the voltage, the semiconductor film 1 The energy levels of the conduction band minimums of the semiconductor films 108a and 108c are higher than the energy levels of the conduction band minimum of the semiconductor film 108b. It is preferable to use a material whose energy level is closer to the vacuum level than the energy level of the semiconductor film 108. The energy level of the conduction band minimum of semiconductor film 108a and 108c is The difference from the Gee level is preferably 0.2 eV or more, more preferably 0.5 eV or more.

[0295] In addition, the semiconductor films 108a and 108c do not contain a spinel type crystal structure. It is preferable that the semiconductor films 108a and 108c contain a spinel-type crystal structure. At the interface between the Spinel crystal structure and other regions, the constituent elements of the conductive films 112a and 112b may diffuse into the semiconductor film 108b.

[0296] The thickness of the semiconductor films 108a and 108c is determined by the thickness of the conductive films 112a and 112b. The thickness of the insulating film 114 is greater than or equal to the thickness that can prevent the insulating film 114 from diffusing into the insulating film 108b. The thickness is set to be less than the thickness that suppresses the supply of oxygen to the conductive film 108b. When the thickness of the conductive film 108c is 10 nm or more, the constituent elements of the conductive films 112a and 112b are semiconductors. In addition, the diffusion of the ions into the semiconductor films 108a and 108c can be suppressed. When the film thickness is 100 nm or less, oxygen is effectively supplied from the insulating film 114 to the semiconductor film 108b. can be provided.

[0297] The semiconductor films 108a and 108c are In-M-Zn oxides (M is Al, Ga, Y, or Sn ), by having M in a higher atomic ratio than In, the semiconductor films 108a and 108c Therefore, the energy gap of the semiconductor film 108b can be increased and the electron affinity can be reduced. It may be possible to control the difference in electron affinity between M and M by adjusting the composition of M. Since is a metal element with a strong bond with oxygen, these elements are present in a higher atomic ratio than In. By having such a structure, oxygen deficiency is less likely to occur.

[0298] When the semiconductor films 108a and 108c are made of In-M-Zn oxide, Zn and O are The atomic ratio of In and M, excluding In, is preferably less than 50 atomic % and M is higher than 50 atomic %, and more preferably, In is less than 25 atomic %, M The content of the semiconductor films 108a and 108c is set to be higher than 75 atomic %. A lithium film may also be used.

[0299] In addition, when the semiconductor films 108a, 108b, and 108c are made of In-M-Zn oxide, The atomic ratio of M contained in the semiconductor films 108a and 108c is larger than that of the film 108b. Typically, the number of atoms contained in the semiconductor film 108b is 1.5 times or more, preferably is at least two times, more preferably at least three times higher than the atomic ratio.

[0300] In addition, when the semiconductor films 108a, 108b, and 108c are made of In-M-Zn oxide, The film 108b is In:M:Zn=x1:y1:z1 [atomic ratio], and the semiconductor films 108a and 10 If 8c is In:M:Zn=x2:y2:z2 [atomic ratio], then y2 / x2 is y1 / x 1, and preferably, y2 / x2 is 1.5 times or more greater than y1 / x1. Preferably, y2 / x2 is at least twice as large as y1 / x1, and more preferably, y2 / x2 is three or four times larger than y1 / x1. In this case, when y1 is equal to or larger than x1, a stable current can be generated in the transistor using the semiconductor film 108b. However, if y1 is three times or more of x1, the semiconductor film 1 Since the field effect mobility of the transistor using 08b is reduced, y1 should be three times larger than x1. It is preferable that it is less than 10 ...

[0301] When the semiconductor film 108b is an In-M-Zn oxide, the semiconductor film 108b is formed by In the target, the atomic ratio of metal elements is In:M:Zn=x1:y1:z1. And 、 x1 / y1 is 1 / 3 or more and 6 or less, and further 1 or more and 6 or less, and z1 / y1 is , 1 / 3 or more and 6 or less, and more preferably 1 or more and 6 or less.

[0302] In addition, when the semiconductor films 108a and 108c are made of In-M-Zn oxide, the semiconductor films 108a and In the target used to deposit 108c, the atomic ratio of metal elements is In:M: If Zn=x2:y2:z2, 、 x2 / y2 <x1 / y1であって、z2 / y2は、1 It is preferable that the ratio of M to In is 3 or more and 6 or less, and more preferably 1 or more and 6 or less. By increasing the atomic ratio, the energy gap of the semiconductor films 108a and 108c can be increased. Since it is possible to reduce the electron affinity, y2 / x2 can be set to 3 or more, or 4 or more. A typical example of the atomic ratio of the metal elements in the target is In:M :Zn=1:3:2, In:M:Zn=1:3:4, In:M:Zn=1:3:5, In :M:Zn=1:3:6, In:M:Zn=1:4:2, In:M:Zn=1:4:4, Examples include In:M:Zn=1:4:5 and In:M:Zn=1:5:5.

[0303] In addition, when the semiconductor films 108a and 108c are made of In-M oxide, M is a divalent metal atom ( For example, by using a composition that does not contain zinc, it is possible to obtain a semiconductor that does not contain a spinel-type crystal structure. Conductor films 108a and 108c can be formed. Also, semiconductor films 108a and 108c For example, an In-Ga oxide film can be used as the In-Ga oxide. For example, an In-Ga metal oxide target (In:Ga=7:93) is used. The semiconductor films 108a and 108c can be formed by sputtering. To form a film by sputtering using C discharge, the atomic ratio should be In:M=x:y. When the ratio is 0.96 or less, preferably 0.95 or less, for example, 0.93 It would be best to do so.

[0304] The atomic ratios of the semiconductor films 108a, 108b, and 108c are each calculated by subtracting the above error. This includes a variation of plus or minus 40% in atomic ratio.

[0305] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0306] (Embodiment 5) In this embodiment, an electronic device including an input / output device of one embodiment of the present invention will be described with reference to FIG. Explanations will be given.

[0307] 20(A) to 20(G) are diagrams showing electronic devices. These electronic devices are 5000, display unit 5001, speaker 5003, LED lamp 5004, operation key 500 5 (including a power switch or an operation switch), a connection terminal 5006, a sensor 5007 ( , displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemicals, Sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or one that includes a function for measuring infrared rays), a microphone 5008, etc. Cut.

[0308] FIG. 20(A) shows a mobile computer, which includes, in addition to the above components, a switch 5009, It may have an infrared port 5010, etc. FIG. 20(B) shows a portable device equipped with a recording medium. A type of image reproducing device (for example, a DVD reproducing device), which, in addition to the above, also has a second display 20C shows a GOG In addition to the above, the display includes a second display unit 5002, a support unit 5012, The game machine may have earphones 5013, etc. FIG. 20(D) shows a portable game machine. In addition to the above, it may have a recording medium reading unit 5011, etc. It is a digital camera with a TV receiving function, and in addition to the above, it has an antenna 5014, a shutter The mobile phone may have a trigger button 5015, an image receiving unit 5016, etc. In addition to the above, it is a type gaming machine that includes a second display unit 5002, a recording medium reading unit 5011, FIG. 20(G) shows a portable television receiver, which can be used with the above-mentioned In addition, it may have a charger 5017 capable of transmitting and receiving signals, etc.

[0309] The electronic devices shown in Figures 20(A) to 20(G) can have various functions. For example, functions to display various information (still images, videos, text images, etc.) on the display, Panel function, calendar, date or time display function, various software (program The function of controlling processing by the program, wireless communication function, and various computer Functions for connecting to computer networks, and for transmitting or receiving various data using wireless communication functions. The function of reading out the program or data recorded on the recording medium and displaying it on the display unit. Furthermore, in an electronic device having a plurality of display units, One display unit mainly displays image information, and the other display unit mainly displays text information. The function to display images that take into account parallax on multiple displays to create a three-dimensional image. Furthermore, in electronic devices having an image receiving unit, It has the functions of taking still images, taking videos, and correcting the captured images automatically or manually. function to save the captured images to a recording medium (external or built-in to the camera); It can have a function of displaying an image on a display unit, etc. The functions that the electronic device shown in (G) can have are not limited to these, and it can have various functions. It is possible.

[0310] FIG. 20(H) shows a smartwatch, which includes a housing 7302, a display panel 7304, and an operation button. Includes: Tan 7311, 7312, connecting terminal 7313, band 7321, clasp 7322, etc. do.

[0311] A display panel 7304 mounted on a housing 7302 that also serves as a bezel has a non-rectangular display area. The display panel 7304 may have a rectangular display area. The display panel 7304 displays an icon 7305 representing the time, other icons 7306, etc. It can be shown.

[0312] The smartwatch shown in FIG. 20(H) can have various functions. For example, functions to display various information (still images, videos, text images, etc.) on the display, Panel function, calendar, date or time display function, various software (program It has the functions of controlling processing by RAM, wireless communication functions, and various computers using wireless communication functions. Functions for connecting to computer networks, sending or receiving various data using wireless communication functions The function of reading out the program or data recorded on the recording medium and displaying it on the display unit. It may have the function of:

[0313] In addition, a speaker, a sensor (force, displacement, position, velocity, acceleration, angular velocity) Degrees, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, electricity Includes functions to measure pressure, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared. The smartwatch may have a light-emitting element, a microphone, etc. The display panel 7304 can be manufactured by using the same.

[0314] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0315] For example, in this specification, when it is explicitly stated that X and Y are connected, In this case, X and Y are electrically connected, and X and Y are functionally connected. The case where X and Y are directly connected and the case where X and Y are directly connected are both considered to be disclosed in this specification. Therefore, the present invention is not limited to the predetermined connection relationships, for example, the connection relationships shown in the drawings or text. Connections other than those shown in the drawings or text are also treated as if they were described in the drawings or text. do.

[0316] Here, X and Y are the object (for example, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, a layer, etc.). , etc.).

[0317] An example of a direct connection between X and Y is a circuit that allows electrical connection between X and Y. The elements to be considered (e.g., switches, transistors, capacitance elements, inductors, resistance elements, When no external device (such as a diode, display element, light-emitting element, or load) is connected between X and Y, The elements that allow electrical connection between X and Y (e.g., switches, transistors, capacitors) elements, inductors, resistors, diodes, display elements, light-emitting elements, loads, etc.) , X and Y are connected.

[0318] An example of an electrical connection between X and Y is The elements to be considered (e.g., switches, transistors, capacitance elements, inductors, resistance elements, One or more devices (e.g., diode, display element, light-emitting element, load, etc.) can be connected between X and Y. It is possible. The switch has a function to control on / off. A switch can be in a conducting state (ON state) or a non-conducting state (OFF state), allowing current to flow. The switch has the function of controlling whether or not the current flows. When X and Y are electrically connected, This includes the case where Y is directly connected.

[0319] An example of a functional connection between X and Y is a function that allows the functional connection between X and Y. Circuits that perform the above functions (for example, logic circuits (inverters, NAND circuits, NOR circuits, etc.), signal conversion conversion circuits (DA conversion circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (voltage power supply circuits (voltage boost circuits, voltage drop circuits, etc.), level shifter circuits that change the signal potential level, etc.) , voltage source, current source, switching circuit, amplifier circuit (which can increase the signal amplitude or current amount, etc.) circuits, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation One or more circuits (e.g., memory circuits, control circuits, etc.) can be connected between X and Y. For example, even if another circuit is inserted between X and Y, the signal output from X If X is transmitted to Y, then X and Y are considered to be functionally connected. When X and Y are functionally connected, there is a direct connection between X and Y and a direct connection between X and Y. This also includes the case where the and are electrically connected.

[0320] In addition, if it is explicitly stated that X and Y are electrically connected, are electrically connected (i.e., there is another element or circuit between X and Y) X and Y are functionally connected (i.e., X and Y are functionally connected) and (When there is a functional connection between them via another circuit) and when X and Y are directly connected (i.e., when X and Y are connected without any other element or circuit between them) is considered to be disclosed in the present specification. If it is explicitly stated that it is connected, The same content is considered to be disclosed in the present specification.

[0321] For example, if the source (or first terminal, etc.) of the transistor is connected via Z1 (or (not shown), electrically connected to X, and the drain (or second terminal, etc.) of the transistor is connected to Z 2 (or not), and is electrically connected to Y, or the source of the transistor (or the first terminal, etc.) is directly connected to a part of Z1, and another part of Z1 is directly connected to X. The drain (or second terminal, etc.) of the transistor is directly connected to a part of Z2. and another part of Z2 is directly connected to Y, It is possible to do so.

[0322] For example, "X and Y and the source (or first terminal, etc.) and drain (or second terminal, etc.) of a transistor" The terminals of the transistor (or the first terminal) are electrically connected to each other. 1 terminal, etc.), the drain of the transistor (or the second terminal, etc.), and Y. It can be expressed as "connected to the source (or the first The first terminal of the transistor is electrically connected to X, and the drain of the transistor is electrically connected to the second terminal of the transistor. The transistor source (or first terminal, etc.) is electrically connected to Y, and the transistor source (or first terminal, etc.) is electrically connected to X. The drain (or second terminal, etc.) of the transistor, Y, is electrically connected in this order. " Alternatively, "X is the source (or first terminal, etc.) of the transistor. and the drain (or second terminal, etc.) are electrically connected to Y, and X, the source (or first terminal, etc.) of a transistor, the drain (or second terminal, etc.) of a transistor ), Y is provided in this order of connection. By specifying the order of connections in the circuit configuration using a simple expression method, Distinguish between the source (or first terminal, etc.) and the drain (or second terminal, etc.) of a transistor. The technical scope can be determined by the above.

[0323] Alternatively, for example, "the source (or first terminal, etc.) of a transistor" is electrically connected to X through at least a first connection path, and the first connection path is , and the second connection path is a transistor through a transistor. The source (or first terminal, etc.) of the transistor and the drain (or second terminal, etc.) of the transistor The first connection path is a path via Z1, and the second connection path is a path between the first and second transistors. The drain (or second terminal, etc.) of the capacitor is electrically connected to Y through at least a third connection path. the third connection path does not have the second connection path, and the third connection path The connection path is the path via Z2. The source (or first terminal, etc.) of the resistor is connected to the resistor via Z1 by at least the first connection path. and electrically connected to X, and the first connection path does not have a second connection path; The second connection path has a connection path through a transistor, and (or the second terminal, etc.) is connected to Y via Z2 by at least a third connection path. The third connection path does not have the second connection path. Alternatively, the source (or first terminal, etc.) of the transistor may be at least The first electrical path is electrically connected to X through Z1. The primary path does not have a second electrical path, and the second electrical path is a From the source (or first terminal, etc.) to the drain (or second terminal, etc.) of the transistor The drain (or second terminal, etc.) of the transistor is connected to at least a third The third electrical path is electrically connected to Y through Z2. , does not have a fourth electrical path, and the fourth electrical path is (or second terminal, etc.) to the source (or first terminal, etc.) of the transistor. Using the same expression as these examples, the circuit configuration By defining the connection path in Distinguishing between the first terminal (or the second terminal, etc.) and the drain (or the second terminal, etc.) to determine the technical scope. can be done.

[0324] These representation methods are merely examples, and the present invention is not limited to these representation methods. , Y, Z1, Z2 are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layer, etc.).

[0325] In addition, the circuit diagram shows independent components as if they are electrically connected to each other. Even if the components are different, one component may have the functions of multiple components. For example, when a part of the wiring also functions as an electrode, one conductive film functions as both the wiring and the electrode. Therefore, the electrode in this specification has the functions of both components. The term "electromagnetic connection" refers to a case where one conductive film has the functions of multiple components. This also falls within the scope of the above. [Explanation of symbols]

[0326] C1 Capacitor element CF colored film COM Second electrode CSCOM conductive film DC Detect Circuit DC2 detection circuit OSC Oscillator circuit SC detection circuit SD drive circuit SD2 drive circuit SWC switching circuit T period T1 period 102 insulating film 104 Conductive film 106 insulating film 108 Semiconductor film 108a Semiconductor film 108b Semiconductor film 108c Semiconductor film 112a Conductive film 112b Conductive film 114 insulating film 116 Insulating film 118 insulating film 122 Opening 124 Conductive Film 301 Circuit 351 circuits 700 I / O devices 700TP Input / Output Panel 701 Insulating film 702 pixels 704 Conductive film 706 Insulating film 708 Semiconductor Film 710 Base material 710P Functional membrane 712A Conductive film 712B Conductive film 716 Insulating film 718 Insulating Film 721 Insulating film 724 Conductive film 728 Insulating Film 729 Insulating Film 730 pixel circuit 750 display element 751 Electrode 753 Layer containing liquid crystal material 753I Layer containing luminescent material 753J Layer containing luminescent material 770 Base material 770P functional membrane 771 Insulating Film 5000 cabinets 5001 Display section 5002 Display section 5003 Speaker 5004 LED lamp 5005 Operation key 5006 Connection terminal 5007 Sensor 5008 Microphone 5009 Switch 5010 Infrared port 5011 Recording medium reading unit 5012 Support part 5013 Earphones 5014 Antenna 5015 Shutter button 5016 Image receiving unit 5017 charger 7302 Housing 7304 Display Panel 7305 Icon 7306 Icons 7311 Operation button 7312 Operation button 7313 Connection terminal 7321 Band 7322 Clasp

Claims

[Claim 1] a pixel, a detection element, a signal line, a control line, and a scan line; the sensing element has an area overlapping the pixel, the signal line is electrically connected to the detection element; the signal lines are electrically connected to the pixels; the control line is electrically connected to the sensing element; the scanning lines are electrically connected to the pixels; the sensing element includes a first conductive film and a second conductive film; the first conductive film is electrically connected to the control line; the second conductive film is electrically connected to the signal line; the second conductive film is disposed so as to form an electric field between itself and the first conductive film; A display device having areas where the electric field is blocked by nearby objects.

Images