Stage and substrate processing apparatus

Abstract

To provide a technique capable of reducing pressure loss of a fluid while having high heat exchange efficiency in temperature adjustment.SOLUTION: The stage is configured to adjust a temperature of the substrate placed on the placing surface by a flow of a temperature adjusting fluid. The stage includes a flow path forming member having a recess, and a lid member assembled to the flow path forming member so as to cover the recess and forming, together with the recess, a flow space through which the fluid for temperature adjustment flows. The lid member includes a heat exchange portion formed by additive manufacturing. The heat exchange portion is located in at least a part of an upper portion of the circulation space in a state where the flow path forming member and the lid member are assembled.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a stage and a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a substrate processing apparatus (substrate inspection apparatus) that inspects a substrate (wafer) by placing the substrate on the upper surface of a stage (substrate mounting table). This stage has an internal coolant flow path that adjusts the temperature of the placed substrate. The stage also has a plurality of thin plate-like heat absorption promotion members (fin structures) that are joined to the bottom and ceiling of the coolant flow path and extend along the coolant flow path. Each heat absorption promotion member promotes heat exchange between the heat of the chuck top and the coolant flowing through the coolant flow path. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-212775 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can reduce fluid pressure loss while maintaining high heat exchange efficiency in adjusting the temperature of a substrate. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a stage that adjusts the temperature of a substrate placed on a mounting surface by the flow of a temperature-adjusting fluid, the stage comprising: a flow path forming member having a recess; and a lid member that is assembled to the flow path forming member so as to cover the recess and that, together with the recess, forms a flow space through which the temperature-adjusting fluid flows, wherein the lid member has a heat exchange portion formed by additive manufacturing, and the heat exchange portion is located in at least a portion of the upper part of the flow space when the flow path forming member and the lid member are assembled. [Effects of the Invention]

[0006] According to one aspect, it is possible to reduce pressure loss of a fluid while maintaining high heat exchange efficiency in adjusting the temperature of a substrate. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a diagram schematically illustrating an overall configuration of a substrate processing apparatus according to an embodiment. [Figure 2] Fig. 2(A) is a perspective view showing a mounting table on which a wafer is placed, and Fig. 2(B) is a vertical cross-sectional view of a chuck top having a flow space. [Figure 3] Fig. 3(A) is a plan cross-sectional view showing the flow space of the chuck top, and Fig. 3(B) is an enlarged cross-sectional view showing the flow space having a heat exchanger. [Figure 4] Fig. 4(A) is a perspective view showing an example of a lattice structure, and Fig. 4(B) is a perspective view showing an example of a unit structure of the lattice structure. [Figure 5] Figure 5(A) is an image showing a cross section of an actual lattice structure produced by additive manufacturing, and Figure 5(B) is a further enlarged image of the surface of the lattice structure in Figure 5(A). [Figure 6] Fig. 6(A) is a first explanatory view showing a method for manufacturing a chuck top having a heat exchanger, Fig. 6(B) is a second explanatory view showing a method for manufacturing a chuck top having a heat exchanger, and Fig. 6(C) is a third explanatory view showing a method for manufacturing a chuck top having a heat exchanger. [Figure 7] 10A and 10B are diagrams illustrating heat exchange between a wafer and a fluid flowing through a flow space. [Figure 8] Figure 8(A) is a graph illustrating the performance of a conventional fin structure and the lattice structure of the embodiment when a fluid at 23°C is passed through them. Figure 8(B) is a graph illustrating the performance of a conventional fin structure and the lattice structure of the embodiment when a fluid at -65°C is passed through them. [Figure 9]Fig. 9(A) is a diagram showing an example of a gyroid structure, and Fig. 9(B) is a diagram showing an example of a unit structure of the gyroid structure of Fig. 9(A). DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] <Overall configuration of substrate processing apparatus 1> 1, a substrate processing apparatus 1 according to an embodiment of the present disclosure is an inspection apparatus that performs electrical inspection of a wafer W, which is an example of a substrate. A plurality of semiconductor devices, which are devices to be inspected, are arranged on the wafer W. Note that the substrate is not limited to the wafer W, and may be a carrier on which semiconductor devices are arranged, a glass substrate, a single chip, an electronic circuit board, or the like.

[0010] The substrate processing apparatus 1 includes a loader 10 for transporting a wafer W, a housing 20 arranged adjacent to the loader 10, a tester 30 arranged above the housing 20, a stage 40 housed within the housing 20, and a controller 90 for controlling each component of the substrate processing apparatus 1.

[0011] The loader 10 removes the wafer W from a FOUP (Front Opening Unified Pod) container (not shown) and places it on the stage 40 that has moved within the housing 20. The loader 10 also removes the inspected wafer W from the stage 40 and stores it in the container.

[0012] The housing 20 is formed into a substantially rectangular box-like shape and has an inspection space 21 therein for inspecting the wafer W. A stage 40 for transporting the wafer W is installed in the inspection space 21. The stage 40 receives the wafer W from the loader 10 in the inspection space 21 and moves within the inspection space 21 in three dimensions (X-axis direction, Y-axis direction, and Z-axis direction) while holding the wafer W.

[0013] A probe card 32 is held in the upper part of the housing 20 via an interface 31. The interface 31 has a performance board and a plurality of pogo blocks (not shown), and electrically connects the motherboard of the tester 30 to the probe card 32. The tester 30 is connected to a controller 90 of the substrate processing apparatus 1, and inspects the wafer W under the command of the controller 90.

[0014] The probe card 32 has a plurality of probes 33 (probes) that protrude downward into the inspection space 21. During inspection by the substrate processing apparatus 1, each probe 33 comes into contact with a pad or solder bump of each semiconductor device on the wafer W that has been moved to an appropriate three-dimensional coordinate position by the stage 40. The tester 30 performs an electrical inspection of each semiconductor device in a group with each probe 33 in contact with each semiconductor device. After inspecting each semiconductor device in a group, the controller 90 moves the stage 40 in three dimensions to shift its position on the wafer W, and then sequentially repeats the inspection of each semiconductor device in other groups by the tester 30, thereby inspecting all semiconductor devices.

[0015] The stage 40 includes a moving section 41 (an X-axis moving mechanism 42, a Y-axis moving mechanism 43, and a Z-axis moving mechanism 44) that is movable in the X-axis, Y-axis, and Z-axis directions, a mounting base 45, and a stage control section 49. The housing 20 includes a frame structure 22 that supports the moving section 41 and mounting base 45 of the stage 40, and the stage control section 49 in two levels, upper and lower.

[0016] The moving unit 41 moves the mounting table 45 in the X-axis, Y-axis, and Z-axis directions based on power supply from the stage control unit 49. The mounting table 45 has a mounting surface 45s on which the wafer W is directly placed. Note that the moving unit 41 may be configured to rotate the mounting table 45 around an axis (the θ direction) in addition to moving the mounting table 45 in the X-axis, Y-axis, and Z-axis directions.

[0017] The stage control unit 49 is connected to the controller 90 and controls the operation of the stage 40 based on commands from the controller 90. The stage control unit 49 includes, for example, an integrated control unit that controls the operation of the entire stage 40, a PLC and motor driver that control the operation of the moving unit 41, a temperature adjustment driver that controls the temperature adjustment mechanism 50 described below, a power supply unit, and the like (all not shown).

[0018] The controller 90 includes a control unit 91 that controls the entire substrate processing apparatus 1 and a user interface 95 connected to the control unit 91. The control unit 91 is an information processing unit that includes a processor 92, a memory 93, an input / output interface (not shown), and an electronic circuit. The processor 92 is one or a combination of a central processing unit (CPU), a graphics processing unit (GPU), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a circuit made of multiple discrete semiconductors, and the like. The memory 93 includes a main storage device made of a semiconductor memory or the like, and an auxiliary storage device made of a disk, semiconductor memory (flash memory), or the like. The memory 93 can be configured by appropriately combining volatile memory and non-volatile memory (e.g., a compact disc, a digital versatile disc (DVD), a hard disk, flash memory, etc.). In other words, in the present disclosure, the controller 90 is an electronic circuit having a CPU, a GPU, an ASIC, an FPGA, etc., and performs the various control operations described in this specification by executing instruction codes stored in the memory 93 or by being a circuit designed for a specific purpose.

[0019] On the other hand, the user interface 95 may be a keyboard through which a user inputs commands, or a display that visualizes and displays the operating status of the substrate processing apparatus 1. Alternatively, the user interface 95 may be a touch panel, a mouse, a microphone, a speaker, or other devices.

[0020] The controller 90 controls the operation of the tester 30 while each probe 33 is in contact with the wafer W, thereby inspecting each semiconductor device on the wafer W. The tester 30 transmits an electrical signal to each semiconductor device on the wafer W and receives a device signal in response from each semiconductor device, thereby determining, for example, whether or not each semiconductor device has an abnormality.

[0021] <Temperature adjustment mechanism 50> The substrate processing apparatus 1 is capable of adjusting the temperature of the wafer W during inspection by a temperature adjustment mechanism 50 installed on the mounting table 45 of the stage 40. This allows the substrate processing apparatus 1 to inspect the characteristics of the wafer W under various temperature conditions. The temperature adjustment mechanism 50 of the stage 40 will be described in detail below.

[0022] 1 and 2(A), the mounting table 45 is configured by stacking a bottom plate 46 and a chuck top 47. The mounting table 45 also has a heat conductive sheet (not shown), a heater 48, and the like stacked between the upper surface of the bottom plate 46 and the lower surface of the chuck top 47. The mounting table 45 is configured by stacking the bottom plate 46, the heat conductive sheet, the heater 48, and the chuck top 47 in this order, for example, from the lower side to the upper side in the vertical direction.

[0023] The bottom plate 46 is a member that attaches the mounting table 45 (chuck top 47) to the Z-axis movement mechanism 44. The bottom plate 46 may include a heat insulating structure or a heat dissipation structure that prevents heat from the chuck top 47 from being directed toward the Z-axis movement mechanism 44.

[0024] The heater 48 disposed between the bottom plate 46 and the chuck top 47 may be a heater sheet, an electric heating wire, or the like. The heater 48 is connected to a temperature adjustment driver provided in the lower part of the housing 20, and is supplied with appropriate power under the control of the temperature adjustment driver by the controller 90, thereby heating the chuck top 47 and the wafer W to a target temperature. The heater 48 may be divided into a plurality of regions in the surface direction (horizontal direction), and the temperature of each region may be individually adjusted.

[0025] The chuck top 47 is a member on which the wafer W is directly placed, and has the above-mentioned placement surface 45s on its upper surface. The chuck top 47 is formed in a disk shape having a diameter slightly larger than that of the wafer W to be placed thereon. The chuck top 47 may be provided with a fixing means capable of fixing the wafer W to be placed thereon. This fixing means may be a suction mechanism that sucks the wafer W, a mechanical mechanism that mechanically engages the wafer W, an electrostatic suction mechanism that electrostatically attracts the wafer W, or the like.

[0026] The stage 40 includes a temperature adjustment mechanism 50 inside the chuck top 47 that adjusts the temperature of the wafer W by circulating a temperature adjustment fluid. This temperature adjustment fluid may be a gas such as air or an inert gas, or a liquid such as cooling water or a fluorine-based liquid. The following description will be given taking as an example a temperature adjustment mechanism 50 that uses a fluorine-based liquid as the temperature adjustment fluid.

[0027] As shown in FIGS. 2A and 2B, the chuck top 47 is formed by assembling multiple members (a flow path forming member 51 and a lid member 52) to form the temperature adjustment mechanism 50. The flow path forming member 51 and the lid member 52 are preferably formed from a material with high thermal conductivity, such as aluminum, copper, pure copper, an aluminum alloy, a copper alloy, or ceramics. However, the flow path forming member 51 and the lid member 52 are not limited to these materials, and stainless steel, such as SUS, may also be used. The flow path forming member 51 and the lid member 52 may be formed from the same material or different materials. Forming the flow path forming member 51 and the lid member 52 from the same material reduces the difference in thermal expansion between them, thereby suppressing deformation or damage of the chuck top 47 due to temperature adjustment.

[0028] The flow path forming member 51 has a perfect circular shape in a plan view and is formed in a block shape with a constant thickness in the Z-axis direction. A recess 511 is provided inside the flow path forming member 51 to form a flow space 53 of the temperature adjustment mechanism 50. The flow path forming member 51 also has an inlet port 512 and an outlet port 513 on its outer circumferential surface, which communicate with the recess 511.

[0029] The recess 511 is formed in the shape of a groove extending horizontally (see also FIG. 3(A)), and has a certain depth. In a cross-sectional view, the bottom side of the recess 511 is formed in a rectangular shape, while the upper side of the recess 511 is open in the vertical direction (see also FIG. 3(B)). The depth of the recess 511 is set so that, when a heat exchanger 521 of the cover member 52 described below is placed on top, an appropriate space (flow path 53a) is generated below the heat exchanger 521.

[0030] Furthermore, the flow path forming member 51 has an arrangement space 51s vertically above the recessed portion 511. The arrangement space 51s is surrounded by an outer periphery 514 of the flow path forming member 51 and communicates with the upper part of the recessed portion 511. A lid member 52 is placed in the arrangement space 51s when the chuck top 47 is assembled. Therefore, the upper part (open part) of the recessed portion 511 is closed by the lid member 52.

[0031] The outer periphery 514 of the flow path forming member 51 has an inner step 514a at the same height as the boundary between the recess 511 and the arrangement space 51s, and the outer periphery of the lid member 52 arranged in the arrangement space 51s is fitted and joined to it. Note that a sealing member (not shown) that airtightly closes the flow space 53 may be provided at the contact point between the flow path forming member 51 and the lid member 52.

[0032] The flow space 53 (recess 511 of the flow path forming member 51) of the temperature adjustment mechanism 50 is formed in a band shape that allows fluid to flow across substantially the entire mounting surface 45s of the chuck top 47 in the plan view shown in FIG. 3A. For example, the recess 511 has an outgoing path 511a that extends in a spiral shape from the outer periphery of the flow path forming member 51 toward the center, and a returning path 511b that turns back from the outgoing path 511a at the center of the flow path forming member 51 and then extends in a spiral shape again toward the outer periphery. The outgoing path 511a and the returning path 511b extend side by side so as to be adjacent to each other in a cross-sectional view of the flow path forming member 51. In this way, by having the outgoing path 511a and the returning path 511b run parallel to each other, it is possible to promote temperature uniformity across the entire mounting surface 45s even if a temperature difference occurs between the fluid that flows into the chuck top 47 and the fluid that is discharged from the chuck top 47.

[0033] 2(A) and 3(A), the inflow port 512 is formed in a cylindrical shape that protrudes slightly from the outer peripheral surface of the flow path forming member 51, and a hole in the cylinder communicates with one end of the recess 511 (outgoing path 511a) in the flow path forming member 51. The protruding portion of the inflow port 512 serves as a connector that can be connected to a fluid supply pipe 54 (see FIG. 1). This allows the inflow port 512 to allow the fluid in the connected supply pipe 54 to flow into the flow space 53.

[0034] Similarly, the outlet port 513 is formed in a cylindrical shape that protrudes slightly from the outer peripheral surface of the flow path forming member 51, and a hole in the cylinder communicates with the other end of the recess 511 (return path 511b) in the flow path forming member 51. The protruding portion of the outlet port 513 serves as a connector that can be connected to a fluid discharge pipe 55 (see FIG. 1). This allows the outlet port 513 to discharge the fluid in the flow space 53 to the connected discharge pipe 55. The inlet port 512 and the outlet port 513 are formed, for example, from stainless steel such as SUS, and are firmly fixed to the flow path forming member 51 by a joining means such as welding.

[0035] 1, the temperature adjustment mechanism 50 has flexible supply pipes 54 and discharge pipes 55 outside the stage 40. The temperature adjustment mechanism 50 also includes a chiller 56 connected to one end of the supply pipes 54 and one end of the discharge pipes 55. The chiller 56 has a heat exchange function for adjusting the fluid to a target temperature, a pump function for circulating the fluid through the flow space 53 of the stage 40, and the like.

[0036] On the other hand, as shown in FIGS. 2(A) and 2(B), the lid member 52 is formed in a circular shape in a plan view and is formed as a disk that is thinner than the flow path forming member 51. The lid member 52 has a diameter smaller than that of the flow path forming member 51 and is housed inside the outer periphery 514 of the flow path forming member 51 (arrangement space 51s) as described above. The diameter of the lid member 52 is preferably larger than the diameter of the wafer W to be inspected. This allows the wafer W to be placed only on the upper surface of the lid member 52 in the placed state of the wafer W. The upper surface of the lid member 52 attached to the flow path forming member 51 becomes the placement surface 45s of the chuck top 47 on which the wafer W is placed.

[0037] The above-described means for fixing the wafer W may be provided inside the lid member 52. Furthermore, one or more temperature sensors for detecting the temperature of the mounting surface 45s (wafer W) may be provided inside the lid member 52. Alternatively, the chuck top 47 may have another chuck member stacked above the lid member 52 for mounting and fixing the wafer W.

[0038] The cover member 52 according to the embodiment has a heat exchanger 521 on its underside, which is inserted into the recess 511 when the cover member 52 is assembled to the flow path forming member 51. As shown in Figures 3(A) and 3(B), the heat exchanger 521 is disposed above the recess 511, thereby forming a flow space 53 having the heat exchanger 521 at its upper part (vertically upward). The heat exchanger 521 is a structural part that promotes heat exchange with the fluid flowing through the flow space 53.

[0039] The heat exchanger 521 is connected to the plate of the cover member 52 and protrudes vertically downward from the plate. The lower surface of the heat exchanger 521 is formed, for example, flat. When the heat exchanger 521 is inserted into the recess 511, it cooperates with the depression at the bottom of the recess 511 to form a substantially rectangular spatial cross section. The heat exchanger 521 is positioned over the entire upper portion of the flow space 53 (on the side of the mounting surface 45s).

[0040] Moreover, in a plan view, the heat exchanger 521 extends in a strip shape corresponding to the spiral shape of the recess 511. Therefore, the temperature adjustment mechanism 50 performs heat exchange between the fluid in the flow space 53 and the cover member 52 (the wafer W placed on the placement surface 45s) by the heat exchanger 521 that is continuous along the extension direction of the recess 511.

[0041] The heat exchanger 521 may be provided over the entire recess 511, or may be provided in a region of the mounting surface 45s where heat exchange is desired to be prioritized. FIG. 3A shows an example in which the heat exchanger 521 is provided from near the center of the outgoing path 511a through the center of the returning path 511b to a position partway along the outer periphery of the returning path 511b. That is, the fluid immediately after flowing into the outgoing path 511a has sufficient momentum (pressure) and is low in temperature, so that the lid member 52 can be sufficiently cooled without the heat exchanger 521. The flow rate decreases near the center of the mounting surface 45s, and by providing a lattice structure 522 (described later) in that vicinity, heat exchange with the fluid can be promoted while reducing pressure loss of the fluid. This allows the temperature adjustment mechanism 50 to improve the in-plane uniformity of the mounting surface 45s and reduce thermal resistance.

[0042] 4(A) and 4(B), a heat exchanger 521 according to the embodiment employs a lattice structure 522 formed by additive manufacturing. The lattice structure 522 is formed into a continuous structure by repeatedly connecting a plurality of designed unit structures 523 in three dimensions (horizontal and vertical directions).

[0043] The unit structure 523 has a plurality of (e.g., eight) arms 523a and a connecting base 523b to which the arms 523a are connected. Each arm 523a is formed in a cylindrical shape and protrudes radially from the connecting base 523b. As an example, four arms 523a protrude from the connecting base 523b in the positive direction of the Z axis, and four arms 523a protrude from the connecting base 523b in the negative direction of the Z axis. The arms 523a in the positive direction of the Z axis and the arms 523a in the negative direction of the Z axis are inclined so as to face the positive direction of the X axis, the negative direction of the X axis, the positive direction of the Y axis, and the negative direction of the Y axis, respectively. The diameter (lattice diameter) of each arm 523a depends on the capabilities of the 3D printer for additive manufacturing (such as the layer pitch), but may be, for example, approximately 0.5 mm to 1.5 mm, and more preferably 1 mm or less. The lengths (pitch) of the arms 523a may be set to the same dimensions, for example, in the range of about 1 mm to several mm.

[0044] The unit structure 523 thus formed has sufficient gaps 524 around each arm 523a and connecting base 523b. That is, the lattice structure 522 allows a fluid to pass through the gaps 524 formed within the unit structures 523 or between the unit structures 523. When passing through the gaps 524, the fluid easily comes into contact with the lattice structure 522, allowing efficient heat exchange with the lattice structure 522. The flow space 53 of the temperature adjustment mechanism 50 is formed by the continuous gaps 524 of the lattice structure 522 (heat exchange section 521) and the flow paths 53a below the lattice structure 522.

[0045] In particular, the lattice structure 522 is formed by repeating a plurality of unit structures 523, and therefore has a regularity in which the same shape is repeatedly arranged. This has the advantage of providing better temperature uniformity than a structure with irregularly formed porous structures. Furthermore, by providing the heat exchanger 521 only above the flow space 53 as described above, heat exchange with the plate (wafer W) of the lid member 52 above the heat exchanger 521 can be smoothly performed, while heat exchange with other portions (the lower portion and both sides) can be suppressed. Since the thermal stress applied to the lattice structure 522 itself can also be suppressed, the risk of deformation or damage to the lattice structure 522 can be reduced.

[0046] Furthermore, the heat exchanger 521 is formed in a flat or rectangular shape in cross section, and a substantially rectangular flow path 53a is provided, thereby suppressing pressure loss of the fluid throughout the entire flow space 53. This allows the fluid to flow smoothly through the flow space 53, while efficiently exchanging heat between the fluid and the heat exchanger 521. Therefore, the stage 40 can prevent deterioration of thermal performance during a transitional period in temperature adjustment and suppress energy loss of the chiller 56. Furthermore, by employing the lattice structure 522, the stage 40 can also promote weight reduction of the chuck top 47, and is expected to have the effect of making the stage 40 itself less susceptible to vibration.

[0047] The material for the lattice structure 522 should have high thermal conductivity and be easy to fabricate by additive manufacturing. For example, metals, alloys, or ceramics including aluminum, magnesium, and / or copper, or ceramics are preferably used as the material for the lattice structure 522. One specific example of the material for the lattice structure 522 is AlSiMg (so-called aluminum casting).

[0048] The lattice structure 522 according to the embodiment is formed by layering unit structures 523 in the Z-axis direction while being joined to the plate body by performing additive manufacturing on the plate body of the lid member 52 as described above. By additive manufacturing, the lattice structure 522 is formed into a pattern such as the image shown in FIG. 5(A), for example.

[0049] Furthermore, by appropriately adjusting the conditions for additive manufacturing, the manufactured lattice structure 522 has a plurality of protrusions 525 on its surface when each arm 523a or connecting base 523b of the unit structure 523 is viewed enlarged as shown in FIG. 5(B). The plurality of protrusions 525 are formed in a substantially spherical shape and are firmly fixed to the surface of each arm 523a or connecting base 523b. Unlike the regularly repeated plurality of unit structures 523, each protrusion 525 is a microstructure that is randomly generated during additive manufacturing. The size (average spherical diameter) of each protrusion 525 is much smaller than the size of the unit structures 523, and is formed to an average spherical diameter of, for example, approximately 3 μm to 300 μm. The surface area of ​​the additively manufactured lattice structure 522 can be increased by having a large number of such fine protrusions 525.

[0050] In additive manufacturing, appropriate conditions are set depending on the additive manufacturing method (laser beam method, binder jetting, powder sintering, material extrusion method, etc.) and the material of the lattice structure 522 to form the multiple protrusions 525. For example, when a laser beam method is used to perform additive manufacturing by melting or hardening granular aluminum casting (AlSi7Mg), conditions such as the average particle size of the material, laser output, laser beam diameter, layer pitch, modeling speed, and oxygen concentration are appropriately set to obtain the multiple protrusions 525. The average particle size of the material to form the multiple protrusions 525 may be, for example, in the range of 10 μm to 100 μm. The laser output may be, for example, in the range of 1 kW to 5 kW, and the laser beam diameter may be, for example, in the range of 50 μm to 300 μm. The layer pitch may be, for example, in the range of 30 μm to 200 μm. The modeling speed may be, for example, in the range of 10 cc / hr to 500 cc / hr. The oxygen concentration is set to 400 ppm or less.

[0051] By appropriately combining or satisfying at least one of the above additive manufacturing conditions, multiple protrusions 525 are generated on the surface of the additively manufactured lattice structure 522. Before manufacturing the heat exchanger 521, it is recommended to perform additive manufacturing multiple times under different conditions to increase the number of protrusions 525 and find optimal additive manufacturing conditions. A lattice structure 522 formed under appropriate additive manufacturing conditions to have multiple protrusions 525 is more likely to come into contact with fluid than a lattice structure (a structure without protrusions 525) formed by other methods, such as cutting, and has higher heat exchange efficiency. Therefore, the stage 40 having the additively manufactured lattice structure 522 can more quickly adjust the temperature of the lid member 52 (wafer W) as fluid flows through it.

[0052] <Chuck Top 47 Manufacturing Method> Next, a method for manufacturing the chuck top 47 having the above-described heat exchange portion 521 will be described with reference to FIGS. 6(A) to 6(C).

[0053] 6(A), in the manufacturing method of the chuck top 47, first, a first member 61 for forming the flow path forming member 51 and a second member 62 for forming the cover member 52 are provided. The first member 61 and the second member 62 are formed from the above-mentioned material (for example, an aluminum alloy).

[0054] 6(B), in the manufacturing method, the block-shaped first member 61 is machined, such as by cutting, to form the arrangement space 51s and the recess 511. In the manufacturing method, the cut recess 511 is further subjected to surface processing, such as polishing or coating, to form the flow path forming member 51 having the recess 511 with a smooth surface (inner surface). Note that the flow path forming member 51 may be provided in a state in which the arrangement space 51s and the recess 511 are already formed by injection molding, casting, or the like, instead of by cutting.

[0055] In the manufacturing method, the plate of the cover member 52 is formed by cutting or the like around the outer periphery of the plate-shaped second member 62, and the heat exchanger 521 (lattice structure 522) is formed by additive manufacturing on one side of this plate. In additive manufacturing, a 3D printer (not shown) reads data on the unit structures 523 of the lattice structure 522 and data on the formation area of ​​the lattice structure 522, and performs additive manufacturing on the base plate based on this data. Because the cover member 52 is in an open-cell state, even a fine lattice structure 522 can be easily formed (laminated) on the plate.

[0056] 6(C), in the manufacturing method, the lid member 52 is inserted into and fitted into the placement space 51s of the flow path forming member 51, and the upper surface is polished using a polishing body 100 to form a mounting surface 45s in which the flow path forming member 51 and the lid member 52 are flush with each other. When inserting the lid member 52, the heat exchange section 521 (lattice structure 522) protruding from the plate body of the lid member 52 is inserted into the recess 511 of the flow path forming member 51. This forms a fluid flow space 53 between the flow path forming member 51 and the lid member 52. The lattice structure 522 is arranged in the upper part of the flow space 53, and a flow path 53a (a hollow without the lattice structure 522) having a rectangular cross section is formed in the lower part of the flow space 53.

[0057] Finally, in the manufacturing method, the outer periphery 514 of the flow path forming member 51 and the outer periphery of the lid member 52 are joined together. For example, diffusion bonding may be used to join the flow path forming member 51 and the lid member 52. This allows the flow path forming member 51 and the lid member 52 to be strongly joined together while suppressing plastic deformation of the flow path forming member 51 and the lid member 52. The joining of the flow path forming member 51 and the lid member 52 is not limited to diffusion bonding, and may be performed by brazing, friction stir welding (FPS), or the like. In the manufacturing method, the joining may be performed before polishing the upper surface, and then a step of polishing the upper surface may be performed. Furthermore, in joining the flow path forming member 51 and the lid member 52, the side surface of the lattice structure 522 and the inner surface of the recess 511 may be joined by the above-mentioned joining method (diffusion bonding, brazing, FPS, or the like).

[0058] 2(B), the above manufacturing method makes it possible to easily and accurately manufacture the chuck top 47 that seals the flow space 53. Here, for example, if both the flow path forming member 51 and the cover member 52 are manufactured by additive manufacturing, there is a concern that the surface roughness of the lower surface of the flow space 53 will be rough. However, by performing cutting (and surface processing) on ​​the flow path forming member 51 as described above, it is possible to form a smooth lower surface of the flow space 53. As a result, the flow space 53 can significantly reduce pressure loss of the fluid.

[0059] <Temperature adjustment method> The stage 40 and the substrate processing apparatus 1 according to the embodiment are basically configured as described above, and their operation (temperature adjustment method) will be described below.

[0060] The controller 90 of the substrate processing apparatus 1 controls the temperature adjustment mechanism 50 to adjust the temperature of the wafer W to a target temperature before inspection and to maintain the adjusted target temperature during inspection. Specifically, the controller 90 detects the temperature of the wafer W using a temperature sensor provided in the mounting table 45 (lid member 52) and controls the heater 48 and chiller 56 to circulate or stop the circulation of the temperature adjustment fluid while monitoring this temperature. For example, when inspecting the wafer W at a target temperature higher than room temperature, the controller 90 heats the heater 48 to adjust the temperature of the wafer W to the target temperature. Note that at this time, the controller 90 may adjust the temperature of the wafer W by controlling the chiller 56 to flow a fluid through the flow space 53. On the other hand, when inspecting the wafer W at a target temperature lower than room temperature (e.g., 0°C or below), the controller 90 stops the heater 48 and controls only the chiller 56 to circulate the cooled fluid, thereby adjusting the temperature of the wafer W to the target temperature.

[0061] During the inspection of the wafer W, the tester 30 supplies power or a signal for the inspection to the wafer W, causing the temperature of the wafer W to rise above the target temperature. In order to maintain the temperature of the wafer W at a substantially constant level during the inspection, the controller 90 controls the chiller 56 to circulate a fluid adjusted to a temperature capable of cooling the wafer W, and supplies and discharges the fluid between the chiller 56 and the flow space 53 of the chuck top 47.

[0062] The fluid flows into the flow space 53 from the inlet port 512 of the chuck top 47, thereby cooling the wafer W placed on the mounting surface 45s of the chuck top 47. At this time, as shown in FIG. 7 , the fluid exchanges heat with the lattice structure 522 at the position where the lattice structure 522 (heat exchange unit 521) is installed. As described above, the lattice structure 522 is joined to the cover member 52. Therefore, heat from the wafer W generated during inspection is transferred to the plate body of the cover member 52 and further transferred from the plate body to each unit structure 523 of the lattice structure 522. The upper part of the fluid flowing through the flow space 53 absorbs heat from each unit structure 523 while passing through the gaps 524 of the lattice structure 522. In particular, the lattice structure 522 having multiple protrusions 525 on its surface has a large surface area and therefore has higher heat exchange efficiency than a conventional fin structure.

[0063] Furthermore, the fluid that hits the lattice structure 522 mixes with the surrounding fluid due to turbulence accompanied by vortices and secondary flows, thereby diffusing heat within the fluid. Therefore, the entire fluid flowing through the flow space 53 efficiently absorbs heat from the upper heat exchanger 521, and the temperature of the wafer W placed on the mounting surface 45s can be smoothly reduced (maintained at the target temperature).

[0064] Furthermore, the controller 90 can adjust the flow rate and / or temperature of the fluid in the chiller 56 to adequately maintain the temperature of the wafer W at the target temperature. Furthermore, the lattice structure 522 formed by additive manufacturing has a small heat capacity and can absorb heat quickly and with high response. This improves the thermal characteristics during the transition period in temperature adjustment compared to conventional fin structures. In other words, the substrate processing apparatus 1 requires less time to adjust the temperature of the wafer W, thereby shortening the overall processing time and improving throughput.

[0065] The performance of a conventional fin structure and the performance of the lattice structure 522 of the embodiment will be described below with reference to the graphs in Figures 8(A) and 8(B). The graphs in Figures 8(A) and 8(B) show simulation results of pressure loss and thermal resistance when a fluid is flowed through the flow space 53. In each graph, the white circles represent the pressure loss and thermal resistance of the conventional fin structure, and the black circles represent the pressure loss and thermal resistance of the lattice structure 522 of the embodiment.

[0066] Pressure loss is an index that indicates the degree to which the flow of fluid in the flow space 53 is obstructed. The load on the pump output, etc., increases, and energy consumption increases. Thermal resistance can be said to be an index that indicates the degree to which heat transfer is obstructed. The greater the thermal resistance, the more difficult it is for heat to transfer, and the longer it takes to adjust the temperature.

[0067] Figure 8(A) shows the simulation results when hydrofluoroether HFE is used as the fluid, the fluid flow rate is 3.0 L / min, the fluid temperature is 23°C, and the heat generation of the wafer W is 2000 W. Other physical properties of the fluid include a density of 1618 kg / m 3 , kinematic viscosity is 0.8mm 2 / s, specific heat was 1125 J / (kg·K), and thermal conductivity was 65.1 mW / dm·K.

[0068] As shown in Figure 8(A), the fin structure had a fluid pressure loss of 63.6 kPa and a thermal resistance of 0.0251 K / W. In contrast, the lattice structure 522 had a fluid pressure loss of 43.8 kPa and a thermal resistance of 0.0156. Therefore, the pressure loss of the lattice structure 522 is 31% lower than that of the fin structure. Furthermore, the thermal resistance of the lattice structure 522 is 38% lower than that of the fin structure.

[0069] 8(B) shows the simulation results when hydrofluoroether HFE is used as the fluid, the fluid flow rate is 3.0 L / min, the fluid temperature is -65°C, and the heat generation of the wafer W is 1500 W. Other physical properties of the fluid include a density of 1801 kg / m 3 , kinematic viscosity is 12.43mm 2 / s, specific heat was 994 J / (kg·K), and thermal conductivity was 82 mW / dm·K.

[0070] As shown in Figure 8(B), the fin structure had a fluid pressure loss of 15.1 kPa and a thermal resistance of 0.01636 K / W. In contrast, the lattice structure 522 had a fluid pressure loss of 15.1 kPa and a thermal resistance of 0.01264 K / W. Therefore, it can be said that the pressure loss of the lattice structure 522 is equivalent to that of the fin structure. Meanwhile, the thermal resistance of the lattice structure 522 is 22.7% lower than that of the fin structure.

[0071] From the above, it has been found that even when the temperature of the fluid is set to room temperature (23°C) or low temperature (-65°C), the flow space 53 having the lattice structure 522 is more likely to absorb heat from the wafer W. In other words, while the conventional fin structure has limitations in improving heat exchange efficiency and reducing pressure loss due to its presence in the flow path, the lattice structure 522 according to the embodiment overcomes the limitations of the fin structure and has high energy exchange efficiency.

[0072] The stage 40 and the substrate processing apparatus 1 of the present disclosure are not limited to the above configurations and may take various modified forms. For example, the flow space 53 and the recess 511 are not limited to groove-shaped passages extending horizontally, but may be one or more partitioned spaces that diffuse the fluid horizontally.

[0073] Furthermore, for example, the unit structures 523 of the lattice structure 522 are not limited to the structure shown in FIG. 4(B) and may adopt various shapes. For example, the number of arms 523a of the unit structure 523 may be nine or more, or less than eight. Another example of the unit structure 523 is one having six arms (two each in the X-axis direction, Y-axis direction, and Z-axis direction). Furthermore, the arms 523a of the unit structure 523 are not limited to extending linearly, and may be curved or bent. Furthermore, the unit structure 523 is not limited to having rod-shaped arms, and plate-shaped arms or the like may be used.

[0074] Furthermore, the overall shape of the lattice structure 522 is not particularly limited, and for example, the lower surface side does not have to be flat. Other shapes of the lower surface side include an arc shape (semicircular shape), a convex shape, etc. Furthermore, when the unit structures 523 have sufficient gaps 524, the lattice structure 522 may be in a form that covers 50% of the cross-sectional shape of the flow space 53, or covers the entire cross-sectional shape of the flow space 53 (100%).

[0075] Furthermore, the heat exchanger 521 may be configured such that at least one of the height of the lattice structure 522, the thickness of the arms 523a and the connecting base 523b, and the surface roughness varies along the extension direction (strip shape) of the flow space 53. By varying the lattice structure 522 along the extension direction of the flow space 53 in this way, it is possible to change the fluid flow state and the contact state of the fluid with the heat exchanger 521. Furthermore, by varying at least one of the height, thickness, and surface roughness, the temperature adjustment mechanism 50 can easily adjust the in-plane temperature distribution of the cover member 52.

[0076] For example, the number of stacked unit structures 523 of the lattice structure 522 can be changed to create different heights in areas on the surface of the wafer W where heat exchange is particularly desired. Specifically, the heat exchanger 521 can increase the efficiency of heat exchange with the fluid by making the lattice structure 522 taller (narrowing the flow path 53a) in areas where the temperature of the wafer W is likely to rise. On the other hand, the heat exchanger 521 can reduce the efficiency of heat exchange with the fluid by making the lattice structure 522 shorter (widening the flow path 53a) in areas where the temperature of the wafer W is unlikely to rise. The thickness and surface roughness of the lattice structure 522 can also be adjusted in a similar manner.

[0077] Furthermore, the stage 40 may employ a structure other than the lattice structure 522 for the heat exchanger 521. For example, as shown in FIGS. 9(A) and 9(B), the heat exchanger 521 employs a gyroid (periodic minimal surface) structure 526 instead of the lattice structure 522. One example of the gyroid structure 526 is a TPMS structure, which is a triple periodic minimal surface. Like the gaps 524 of the lattice structure 522, the unit structures 527 of the gyroid structure 526 also have gaps 528 that are continuous within the unit structures 527 and also connect between the unit structures 527. Therefore, the fluid flowing through the flow space 53 can perform good heat exchange with the gyroid structure 526 while flowing through the flow paths 53a and the gaps 528.

[0078] The technical ideas and effects of the present disclosure explained in the above embodiments will be described below.

[0079] A first aspect of the present disclosure is a stage 40 that adjusts the temperature of a substrate (wafer W) placed on a mounting surface 45s by the flow of a temperature-adjusting fluid, and includes a flow path forming member 51 having a recess 511, and a lid member 52 that is assembled to the flow path forming member 51 so as to cover the recess 511 and that, together with the recess 511, forms a flow space 53 through which the temperature-adjusting fluid flows, and the lid member 52 has a heat exchange section 521 formed by additive manufacturing, and the heat exchange section 521 is located in at least a portion of the upper part of the flow space 53 when the flow path forming member 51 and the lid member 52 are assembled.

[0080] As described above, the stage 40 has the heat exchanger 521 formed by additive manufacturing, and thus can efficiently exchange heat with the fluid flowing through the flow space 53. Moreover, the heat exchanger 521 disposed in at least a portion of the upper part of the flow space 53 prevents the flow of the fluid in the flow space 53 from being obstructed. In other words, the stage 40 can reduce pressure loss of the fluid while having high heat exchange efficiency in temperature adjustment.

[0081] Furthermore, the heat exchanger 521 is a lattice structure 522 in which a plurality of unit structures 523, 527 each having gaps 524, 528 are repeated, or a gyroid structure 526. In this way, by forming a structure having periodic gaps 524, 528 by additive manufacturing, the heat exchanger 521 can perform good heat exchange with the fluid while allowing the fluid to circulate appropriately.

[0082] Furthermore, unit structure 523 has a plurality of arms 523a, and the diameter of each of the arms 523a is in the range of 0.5 mm to 1.5 mm, so that unit structure 523 has gaps that allow heat exchange with the fluid while not significantly impeding the flow of the fluid.

[0083] The heat exchanger 521 is made of a metal, including aluminum, magnesium and / or copper, ceramics, or an alloy of the metal, or ceramics, which allows the heat exchanger 521 to have high heat exchange efficiency and low heat capacity, enabling high-speed, high-response heat exchange.

[0084] Furthermore, the heat exchanger 521 has a plurality of spherically formed protrusions 525 on its surface, which gives the heat exchanger 521 a larger surface area, further increasing the efficiency of heat exchange with the fluid.

[0085] The size of the plurality of protrusions 525 is in the range of 3 μm to 300 μm. This allows the heat exchange portion 521 to have a large number of fine protrusions 525 on the surface, further increasing the efficiency of heat exchange with the fluid.

[0086] Furthermore, the surface of heat exchanger 521 facing the bottom of recess 511 is formed flat, so that flow space 53 has a flow path with an appropriate cross-sectional shape that does not interfere with the flow of fluid (no heat exchanger 521), and the pressure loss of the fluid can be sufficiently reduced.

[0087] Furthermore, the heat exchanger 521 is provided at a midpoint in the extension direction of the flow space 53. This prevents the temperature of the stage 40 from becoming too high near the points where the fluid flows in or out, thereby preventing the in-plane temperature distribution from being impaired.

[0088] Furthermore, heat exchanger 521 can adjust the in-plane temperature distribution of cover member 52 by varying at least one of the height, thickness, and surface roughness along the extension direction of flow space 53. This allows stage 40 to adjust the in-plane temperature distribution with greater precision.

[0089] Furthermore, the recess 511 of the flow path forming member 51 is formed by cutting and is surface-treated to have a smooth surface, which allows the fluid flowing through the flow space 53 to flow more smoothly due to the smooth surface.

[0090] Furthermore, the flow path forming member 51 and the lid member 52 are joined together by diffusion welding, friction stir welding, or brazing around the periphery of the heat exchanger 521, with the heat exchanger 521 inserted into the recess 511 to form the flow space 53. This allows the stage 40 to tightly seal the flow path forming member 51 and the lid member 52, and appropriately prevents fluid from leaking from the flow space 53.

[0091] A second aspect of the present disclosure is a substrate processing apparatus 1 having a stage 40 that adjusts the temperature of a substrate (wafer W) to be processed that is placed on a placement surface 45s by the flow of a temperature-adjusting fluid, wherein the stage 40 includes a flow path forming member 51 having a recess 511, and a lid member 52 that is assembled to the flow path forming member 51 so as to cover the recess 511 and that, together with the recess 511, forms a flow space 53 through which the temperature-adjusting fluid flows, and the lid member 52 has a heat exchanger 521 formed by additive manufacturing, and the heat exchanger 521 is located above at least a portion of the flow space 53 in a state in which the flow path forming member 51 and the lid member 52 are assembled. Even in this case, the substrate processing apparatus 1 can reduce pressure loss of the fluid while maintaining high heat exchange efficiency in temperature adjustment, and can perform inspection well while adjusting the temperature of the substrate.

[0092] The stage 40 and substrate processing apparatus 1 according to the presently disclosed embodiments are illustrative in all respects and are not limiting. The embodiments may be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above embodiments may be configured differently and may be combined within the scope of the appended claims.

[0093] Furthermore, the stage 40 of the present disclosure may be applied to a substrate processing apparatus that performs substrate processing such as film formation and etching on the wafer W. Furthermore, although the stage 40 according to the embodiment is configured to include the moving unit 41, the stage 40 may also be configured without the moving unit 41 (for example, only the mounting table 45). [Explanation of symbols]

[0094] 1. Substrate processing equipment 40 stages 45s Placement surface 51 Flow path forming member 511 recess 52 Cover member 521 Heat exchange section 53 Distribution space W wafer

Claims

1. A stage that adjusts the temperature of a substrate placed on a placement surface by circulating a temperature adjusting fluid, a flow path forming member having a recess; a cover member attached to the flow path forming member so as to cover the recessed portion, and which, together with the recessed portion, forms a flow space through which the temperature adjusting fluid flows, The cover member has a heat exchange portion formed by additive manufacturing, The heat exchange unit is located in at least a part of an upper portion of the flow space when the flow path forming member and the cover member are assembled. stage.

2. The heat exchanger has a lattice structure or a gyroid structure in which a plurality of unit structures having gaps are repeated. The stage of claim 1 .

3. The unit structure has a plurality of arms, The diameter of the arms ranges from 0.5 mm to 1.5 mm. The stage of claim 2 .

4. The heat exchange unit is formed of a metal including aluminum, magnesium and / or copper, ceramics, or an alloy of the metal, or ceramics. A stage according to any one of claims 1 to 3.

5. The heat exchanger has a plurality of spherically formed protrusions on its surface. A stage according to any one of claims 1 to 3.

6. The size of the plurality of convex portions is in the range of 3 μm to 300 μm.

6. The stage of claim 5.

7. The surface of the heat exchanger facing the bottom of the recess is flat. A stage according to any one of claims 1 to 3.

8. The heat exchange unit is provided at a midpoint in the extension direction of the flow space. A stage according to any one of claims 1 to 3.

9. The heat exchanger has at least one of a height, a thickness, and a surface roughness that varies along the extension direction of the flow space, thereby enabling adjustment of an in-plane temperature distribution of the cover member. A stage according to any one of claims 1 to 3.

10. The recess of the flow path forming member is formed by cutting and is subjected to surface processing so as to have a smooth surface. A stage according to any one of claims 1 to 3.

11. The flow path forming member and the cover member are joined together by diffusion welding, friction stir welding, or brazing around the periphery of the heat exchanger in a state where the heat exchanger is inserted into the recess to form the flow space. A stage according to any one of claims 1 to 3.

12. a stage that adjusts the temperature of a substrate to be processed placed on a placement surface by circulating a temperature adjusting fluid, The stage is a flow path forming member having a recess; a cover member attached to the flow path forming member so as to cover the recessed portion, and which, together with the recessed portion, forms a flow space through which the temperature adjusting fluid flows, The cover member has a heat exchange portion formed by additive manufacturing, The heat exchange unit is located in at least a part of an upper portion of the flow space when the flow path forming member and the cover member are assembled. Substrate processing equipment.

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